TWI695079B - 用來沈積材料之方法及設備 - Google Patents

用來沈積材料之方法及設備 Download PDF

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TWI695079B
TWI695079B TW105110062A TW105110062A TWI695079B TW I695079 B TWI695079 B TW I695079B TW 105110062 A TW105110062 A TW 105110062A TW 105110062 A TW105110062 A TW 105110062A TW I695079 B TWI695079 B TW I695079B
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substrate
chamber
magnetic field
secondary magnetic
target
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史帝芬Ｒ 柏吉斯
隆達 辛德曼
阿密特 瑞斯托吉
愛德華多Ｐ 立馬
克里夫Ｌ 維迪克斯
保羅 瑞區
史考特 海摩爾
丹尼爾 庫克
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英商Ｓｐｔｓ科技公司
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Abstract

一種藉由具有一脈衝式DC磁控管裝置之脈衝式DC磁控管濺鍍來於一腔室內沈積一介電材料至一基體上之方法，該脈衝式DC磁控管裝置產生一或多個一次磁場；其中一濺鍍材料自一標靶而被濺鍍，其中該標靶與該基體係藉由2.5厘米至10厘米範圍內之一間隙被分開，及於該腔室內部產生一個二次磁場其造成由該脈衝式DC磁控管裝置產生的一電漿朝向該腔室的一或多個壁面膨脹。

Description

用來沈積材料之方法及設備
本發明係有關於藉磁控管濺鍍沈積一材料至一腔室內之一基體上之方法及關於相關聯的設備。
磁控管濺鍍乃物理氣相沈積(PVD)的一眾所周知實例。磁控管濺鍍係用以沈積某一範圍的薄膜至某一範圍的基體上。舉例言之，已知藉脈衝式DC磁控管濺鍍沈積AIN膜。AIN膜可以經界定的晶相學定向沈積，其產生壓電性質。如此沈積膜於某些經界定的RF頻帶形成共振結構。此型膜具有應用，例如用於體聲波(BAW)裝置的製造，其係用作為RF頻率之濾波器。典型地，具有數平方毫米表面積的BAW裝置係製造於圓形矽基體上。矽基體的直徑可以是200毫米。壓電AIN膜的共振頻率為膜厚度及其聲波性質的第一次冪函數。因此，跨基體的AIN厚度之非均一度須極低以便使得濾波器於正確RF濾波頻帶工作。典型地，AIN厚度之非均一度(NU%)須小於1%。
AIN的PVD之一已知問題為於基體的徑向最外部分的沈積膜厚度顯著地減少。針對200毫米直徑矽晶圓，晶圓的徑向最外部15毫米對AIN膜厚度的實質減少特別敏 感。該減少使得除非進行額外製程步驟以因應此種膜厚度的特有變異，否則BAW濾波器無法從晶圓的此一部分製成。圖1顯示AIN膜厚度的兩條線掃描(埃)呈矽晶圓半徑(毫米)之函數，一條相對於另一條為90度用以沈積於第一1及第二2晶圓上。膜厚度的減少於最外20毫米晶圓變顯著，且於晶圓的最外部15毫米為特別顯著。針對200毫米直徑晶圓，晶圓的最外部15毫米表示87平方厘米面積，於該處全表面積為314平方厘米。如此表示可用的加工矽損耗28%。
須瞭解通常期望自磁控管濺鍍達成均一沈積膜厚度，原因在於通常期望製造方法提供均一結果。因此，本發明並不限於AIN膜的沈積。
於至少若干實施例中，本發明解決了前述問題。
依據本發明之第一面向，提出一種藉由具有一脈衝式DC磁控管裝置之脈衝式DC磁控管濺鍍來於一腔室內沈積一介電材料至一基體上之方法，該脈衝式DC磁控管裝置產生一或多個一次磁場(primary magnetic fields)；其中一濺鍍材料自一標靶而被濺鍍，其中該標靶與該基體係藉由2.5厘米至10厘米範圍內的一間隙被分開，及於該腔室內部產生一個二次磁場(secondary magnetic field)其造成由該脈衝式DC磁控管裝置產生的一電漿朝向該腔室的一或多個壁面膨脹。
該基體可具有一寬度其為150毫米或以上。
該標靶具有一寬度及該基體具有一寬度。該標靶 的該寬度係大於該基體的該寬度。於此等情況下，電漿寬度係大於基體寬度，進一步膨脹電漿為優異係違反直覺。典型地，標靶及基體的寬度各自為半徑。原則上，標靶及基體可具有不同形狀，及寬度可對應於一或多個不同線性維度。
該二次磁場可使用一電磁鐵產生。該二次磁場可藉施加一DC電流至一線圈產生。該線圈可環繞該腔室之該周邊布置。典型地，磁控管裝置係位在腔室的上區，及線圈係環繞位在腔室的上區下方的該腔室之一主體部布置。線圈原則上可布置於腔室內部。然而，相信為較不實際的配置。
該電磁鐵可以是一單一電磁鐵或具有對齊的極性(aligned polarity)的一串列之電磁鐵使得全部該等電磁鐵造成由該磁控管裝置產生的該電漿朝向該腔室的一或多個壁面膨脹。
另外，二次磁場可使用永久磁鐵產生。但優異地使用電磁鐵，原因在於較為容易微調二次磁場而產生最佳效能。
該二次磁場係經產生因而提供於該基體之一周邊部該沈積介電材料之一增加的厚度。
該二次磁場可造成離子被操控遠離該基體的一周邊部。該二次磁場可吸引電子朝向該腔室的一或多個壁面用以產生一漂移電場，其操控離子遠離該基體的一周邊部。
該二次磁場可於該腔室之該等壁面與該基體間之一區域內於該腔室內大致上於軸向延伸。
該材料可使用脈衝式DC磁控管濺鍍沈積。相信本發明當結合脈衝式DC磁控管濺鍍或產生高密度離子的任何其它磁控管濺鍍技術使用時為特別有效。
該材料可藉反應性濺鍍沈積。
沈積介電材料可以是AIN。沈積介電材料可以是氧化矽。
負偏壓電位可施加至於其上布置該基體的一基體撐體。
電漿可於包含氬的氣體混合物中產生。可預期涵蓋其它貴氣體。
Ar+離子可被操控遠離基體的周邊部。
該基體可以是一半導體基體諸如一半導體晶圓。該基體可以是矽基體。該基體可以是具有200毫米或300毫米半徑的晶圓。
依據本發明之第二面向，提出一種用來藉脈衝式DC磁控管濺鍍而沈積一介電材料至一基體上的PVD設備，其包含：一腔室；一脈衝式DC磁控管裝置其產生一或多個一次磁場，該脈衝式DC磁控管裝置包含一標靶，一濺鍍材料可自該標靶而被濺鍍；布置於該腔室內之一基體撐體； 一個二次磁場產生裝置，其係經組配使得於使用中將該標靶與該基體以2.5厘米至10厘米範圍內的一間隙分開；及一控制器，其係經組配以控制該二次磁場產生裝置使得當該介電材料正在被沈積時在該腔室內產生一個二次磁場，其操控電子朝向該腔室的一或多個壁面以產生一漂移電場，其操控離子遠離該基體的一周邊部。
該基體撐體可經組配以支承具有150毫米或以上之一寬度的一基體。
該標靶可具有一寬度。該基體撐體可經組配以支承具有一寬度的一基體。該標靶的該寬度可大於該基體的該寬度。
該二次磁場產生裝置可以是一電磁鐵。該電磁鐵可以是一單一電磁鐵或具有對齊的極性的一串列之電磁鐵，使得全部該等電磁鐵產生磁場，其操控電子朝向該腔室的一或多個壁面用以產生一漂移電場，其操控離子遠離該基體的一周邊部。
該二次磁場產生裝置可包含環繞該腔室的周邊布置的一線圈及一電源供應器用以供應DC電流給該線圈。
脈衝式DC磁控管裝置可以是平衡磁控管或不平衡磁控管。
該設備可進一步包含該基體。
依據本發明之第三面向，提出一種製造一體聲波裝置之方法，其包含使用依據本發明之第一面向之方法沈 積一介電材料至一基體上。
雖然已經如前文描述本發明，但其擴充至前文或於後文詳細說明部分、附圖或申請專利範圍中陳述之特徵的任何發明組合。
1、2、50、52、54、60、62、 64‧‧‧線
20、32‧‧‧腔室
20a‧‧‧標靶背板
21‧‧‧磁場
22、36‧‧‧標靶
24‧‧‧磁鐵
26‧‧‧晶圓
28‧‧‧平台
29、40‧‧‧線圈
30‧‧‧設備
34‧‧‧磁控管裝置
38‧‧‧基體撐體
42‧‧‧DC電源供應器
44‧‧‧RF電源供應器
46‧‧‧線圈DC電源供應器
48‧‧‧控制器
現在將參考附圖描述依據本發明之設備及方法之實施例，附圖中：圖1顯示針對先前技術沈積方法AIN膜厚度呈晶圓徑向位置之函數；圖2為用以沈積AIN的先前技術DC磁控管系統之一部分的半示意剖面圖；圖3顯示本發明之PVD設備；圖4為用以沈積AIN的本發明之DC磁控管系統之一部分的半示意剖面圖；圖5顯示針對於DC線圈中之多個DC電流值，AIN膜厚度呈晶圓徑向位置之函數；及圖6顯示針對於DC線圈中之多個DC電流值，於晶圓內部沈積AIN膜之非均一度。
圖3顯示本發明之PVD設備，大致上描繪於30。設備30包含一腔室32其含有一DC磁控管裝置34，一標靶36，材料從標靶而藉磁控管裝置34濺鍍，及一基體撐體38，其支承其上沈積期望材料的一基體(於圖中未顯示)。設備30進一步包含一線圈40，其係布置環繞腔室32的主體部。於 圖3顯示的實施例中，腔室為圓柱形，但原則上可運用其它腔室形狀及其它線圈截面形狀。為求呈現簡單，磁控管濺鍍裝置的其它常見面向諸如進氣口及出氣口並未顯示於圖3。
脈衝式DC電力自DC電源供應器42施加至標靶36。由線圈DC電源供應器46施加DC電力至線圈40，其使得施加的電流改變。RF電力自RF電源供應器44施加至基體撐體38以便對基體撐體施加負偏壓。典型地，基體撐體38遵照公約於13.56MHz驅動，但本發明並不限於此一方面。電源供應器42、44、46之操作以控制器48控制。控制器48可以是具有合宜圖形使用者介面的電腦。
前文已經描述諸如AIN材料沈積相關聯的膜均勻度問題。本發明人相信其已經發現在晶圓周邊沈積的AIN膜之厚度減薄的理由。不欲受任何特定理由或臆測所限，相信在晶圓周邊的膜厚度減薄係因由帶正電荷離子濺鍍所致。此點描繪於圖2，其顯示DC磁控管系統的部分，其包含一腔室20具有作為蓋部的一標靶背板20a。一標靶22連結到標靶背板20a。一對可旋轉式磁鐵24係定位在標靶22遠端的標靶背板之表面對側。一晶圓26係定位在平台28上，平台28可以是經RF驅動而產生負DC偏壓。氬氣與氮氣之混合物被導入腔室內部，脈衝式負高DC電壓施加至標靶背板20a/標靶22，其藉此而作為陰極。如此形成高密度電漿，其包括Ar及AIN離子。晶圓26位在陰極的主溶蝕軌跡，其係由磁鐵24的旋轉路徑指示。相信部分離子逃離電漿的負輝 光，及朝向平台28移動。也相信在平台28上的負偏壓作用來吸引帶正電荷的離子諸如Ar+朝向晶圓26邊緣，造成沈積AIN膜在此區域欲被濺鍍蝕刻減薄。鋁及氮陽離子也可造成若干濺鍍蝕刻。
圖4顯示本發明之設備的一部分，其分享圖2顯示的先前技術設備之許多特徵。因此，相同元件符號已經用於圖4描述此等分享特徵。圖4中顯示的本發明之實施例包含多匝線圈29，其係環繞腔室20的主體區段定位。線圈29係被供應來自DC電源供應器(於圖中未顯示)的DC電流。圖4也顯示由高能線圈29產生的二次磁場線。可見於腔室20內部產生的磁場21線大致上沿該腔室接近主體區段的腔室壁軸向移動。由線圈29產生的二次磁場的效果係造成電漿朝向腔室20主體區段的壁面膨脹。不欲受任何理論或臆測所限，相信二次磁場自陰極吸引電子，其又轉而設定一漂移電場，其操控離子遠離晶圓26邊緣。如此減少了於晶圓邊緣的濺鍍蝕刻。因此，相信本發明可減少朝向晶圓邊緣移動的正離子數目，否則藉由操作此等正離子朝向腔室壁將濺鍍蝕刻晶圓邊緣區域。隨著撞擊晶圓邊緣區域的正離子數目的減少，相信在晶圓的此一區域由離子碰撞所引起的局部化減薄效應也減少。如此導致改良的沈積膜均勻度。
使用依據圖2及圖4之設備已經進行實驗用以於矽基體上沈積AIN膜。使用的沈積製程條件如表1中顯示。
Figure 105110062-A0202-12-0008-1
Figure 105110062-A0202-12-0009-2
各種DC電流施加至產生二次磁場的線圈(分別對應於圖4及圖3中顯示的線圈29及40)。更明確言之，0A、10A及20A電流結合33匝線圈使用。圖5顯示針對使用此等DC電流沈積的膜，AIN沈積膜厚度呈於晶圓上的徑向位置之函數。線50顯示當未施加電流時的膜厚度，線52顯示使用10A電流時的膜厚度，及線54顯示使用20A電流時的膜厚度。可知當使用20A電流以生成二次磁場時，並無在矽晶圓邊緣的AIN膜厚度的減少。圖6顯示晶圓內部(WIW)膜厚度非均一度表示為針對3、5及10毫米緣互斥(ee)的49點極性度量之1Σ%標準差呈施加至產生二次磁場的線圈之DC線圈電流之函數。線60、62、64分別對應於3、5及10毫米緣互斥。圖6顯示未施加DC電流，於3及5毫米緣互斥的非均一度高，其係因在晶圓邊緣的膜厚度減少所致。於20A施加DC電流，晶圓內部非均一度大致上針對3、5及10毫米緣互斥為相同。可知針對與此等實驗相關聯的系統及製程條件，最佳二次磁場係藉施加約20A DC電流產生。也可知達成優 異結果。實際上，加工至3毫米緣互斥被視為業界現況。使用電磁鐵來產生二次磁場為優異，原因在於其允許場強度容易變更來達成最佳結果。於此處提供之實例中，最佳磁場為33x20=660安培匝。用於任何給定實施例，最佳磁場能夠使用此處提出的原理方便推衍。
本發明可應用至寬廣範圍之PVD系統。可能產生具體實施本發明之訂製系統及也可能方便改造既有PVD系統。
30‧‧‧設備
32‧‧‧腔室
34‧‧‧磁控管裝置
36‧‧‧標靶
38‧‧‧基體撐體
40‧‧‧線圈
42‧‧‧DC電源供應器
44‧‧‧RF電源供應器
46‧‧‧線圈DC電源供應器
48‧‧‧控制器

Claims (22)

  1. 一種藉由具有一脈衝式DC磁控管裝置之脈衝式DC磁控管濺鍍來於一腔室內沈積一介電材料至一基體上之方法，該脈衝式DC磁控管裝置產生一或多個一次磁場(primary magnetic fields)；其中一濺鍍材料自一標靶而被濺鍍，其中該標靶與該基體係藉由2.5厘米至10厘米範圍內的一間隙被分開，及於該腔室內部產生一個二次磁場(secondary magnetic field)，其造成由該脈衝式DC磁控管裝置產生的一電漿朝向該腔室的一或多個壁面膨脹；且其中一負RF偏壓電位係施加至一基體撐體，該基體係布置於其上。
  2. 如請求項1之方法，其中該基體具有150毫米或以上之一寬度。
  3. 如請求項1或2之方法，其中該標靶具有一寬度，該基體具有一寬度，及該標靶的該寬度係大於該基體的該寬度。
  4. 如請求項1之方法，其中該二次磁場係使用一電磁鐵產生。
  5. 如請求項4之方法，其中該二次磁場係藉施加一DC電流至一線圈而產生，該線圈係被布置環繞該腔室之周邊。
  6. 如請求項5之方法，其中該線圈係延伸至基體的平面之下。
  7. 如請求項4或5之方法，其中該電磁鐵為一單一電磁鐵或具有對齊的極性(aligned polarity)的一串列之電磁鐵使得全部該等電磁鐵造成由該磁控管裝置產生的該電漿朝向該腔室的一或多個壁面膨脹。
  8. 如請求項1之方法，其中該二次磁場係經產生因而提供經沈積的介電材料之一增加的厚度於該基體之一周邊部。
  9. 如請求項1之方法，其中該二次磁場造成離子被操控遠離該基體的一周邊部。
  10. 如請求項9之方法，其中Ar+離子係被操控遠離該基體的該周邊部。
  11. 如請求項9或10之方法，其中該二次磁場吸引電子朝向該腔室的一或多個壁面用以產生一漂移電場，其操控離子遠離該基體的一周邊部。
  12. 如請求項1或2之方法，其中該二次磁場於該腔室之該等壁面與該基體間之一區域內於該腔室內大致上於軸向延伸。
  13. 如請求項1或2之方法，其中AlN係經沈積。
  14. 如請求項1或2之方法，其中該基體為一半導體基體，諸如一矽基體。
  15. 一種用來藉脈衝式DC磁控管濺鍍來沈積一介電材料至一基體上的PVD設備，其包含：一腔室；一脈衝式DC磁控管裝置，其產生一或多個一次磁 場，該脈衝式DC磁控管裝置包含一標靶，一濺鍍材料可自該標靶而被濺鍍；布置於該腔室內之一基體撐體；一個二次磁場產生裝置，其係經組配使得於使用中將該標靶與該基體以2.5厘米至10厘米範圍內的一間隙分開；及一控制器，其係經組配以控制該二次磁場產生裝置，使得當該介電材料正在被沈積時在該腔室內產生一個二次磁場，其操控電子朝向該腔室的一或多個壁面以產生一漂移電場，其操控離子遠離該基體的一周邊部；且其中一負RF偏壓電位係施加至該基體撐體，該基體係布置於其上。
  16. 如請求項15之設備，其中該基體撐體係經組配以支承具有一150毫米或以上之寬度的一基體。
  17. 如請求項15或16之設備，其中該標靶具有一寬度，該基體撐體係經組配以支承具有一寬度的一基體，及該標靶的該寬度係大於該基體的該寬度。
  18. 如請求項15或16之設備，其中該二次磁場產生裝置為一電磁鐵。
  19. 如請求項18之設備，其中該電磁鐵為一單一電磁鐵或具有對齊的極性的一串列之電磁鐵，使得全部該等電磁鐵產生磁場，其操控電子朝向該腔室的一或多個壁面用以產生一漂移電場，其操控離子遠離該基體的一周邊部。
  20. 如請求項15或16之設備，其中該二次磁場產生裝置包含 環繞該腔室的周邊布置的一線圈及一電源供應器用以施加DC電流給該線圈。
  21. 如請求項15或16之設備，其進一步包含該基體。
  22. 一種製造一體聲波裝置之方法，其包含使用如請求項1之方法沈積一介電材料至一基體上。
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