TWI694430B - 微型led顯示面板 - Google Patents

微型led顯示面板 Download PDF

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TWI694430B
TWI694430B TW107141550A TW107141550A TWI694430B TW I694430 B TWI694430 B TW I694430B TW 107141550 A TW107141550 A TW 107141550A TW 107141550 A TW107141550 A TW 107141550A TW I694430 B TWI694430 B TW I694430B
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electrode
micro led
insulating layer
micro
display panel
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張煒熾
賴寵文
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超微晶科技(深圳)有限公司
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Abstract

一種微型LED顯示面板，其包括：基板；形成在所述基板一表面的畫素電路層，所述畫素電路層包括複數TFT；形成在所述畫素電路層上的絕緣層；以及形成在所述畫素電路層上且嵌設在所述絕緣層中的複數微型LED，每一個微型LED具有靠近所述畫素電路層的第一端和遠離所述畫素電路層且相對所述絕緣層露出的第二端，每一個微型LED的第一端與所述畫素電路層之間設置有第一電極，每一個微型LED的第二端覆蓋連接有第二電極，第二電極為透明的；所述第一電極定義有透光區以使微型LED發出的光能穿過。所述顯示面板可實現雙面顯示效果。

Description

微型LED顯示面板
本發明涉及一種具有雙面顯示效果的微型LED顯示面板。
微型發光二極體(light emitting diode，LED)顯示面板包括間隔排布的複數微型LED(也稱為micro-LED)。習知的微型LED顯示面板通常具有使用者接觸和觀看其顯示圖像的一表面，稱為顯示面。然而，習知的微型LED顯示面板通常為單面顯示。
鑒於此，本發明提供一種微型LED顯示面板，其可實現雙面顯示效果。
一種微型LED顯示面板，其包括：基板；形成在所述基板一表面的畫素驅動電路層，所述畫素驅動電路層包括複數TFT；形成在所述畫素驅動電路層上的絕緣層；以及形成在所述畫素驅動電路層上且嵌設在所述絕緣層中的複數微型LED，每一個微型LED具有靠近所述畫素驅動電路層的第一端和遠離所述畫素驅動電路層且相對所述絕緣層露出的第二端，每一個微型LED的第一端與所述 畫素驅動電路層之間設置有第一電極，每一個微型LED的第二端覆蓋連接有第二電極，第二電極為透明的；所述第一電極定義有透光區以使微型LED發出的光能穿過。
所述微型LED顯示面板的微型LED發出的光可穿過第二電極也可穿過第一電極，進而實現雙面顯示。
100:微型LED顯示面板
101:第一表面
103:第二表面
10:基板
20:畫素電路層
30:絕緣層
40:微型LED
50:第一電極
60:第二電極
41:第一端
42:第二端
110:顯示區
130:非顯示區
70:驅動IC
80:導線
51:透光區
53:非透光區
21:TFT
213:開關TFT
211:驅動TFT
31:第一絕緣層
33:第二絕緣層
43:側壁
45:介電層
91:調節電極
93:連接電極
圖1為本發明較佳實施方式的微型LED顯示面板的立體示意圖。
圖2為本發明較佳實施方式的微型LED顯示面板的局部剖面示意圖。
圖3為本發明較佳實施方式的微型LED顯示面板的平面示意圖。
圖4為微型LED顯示面板的第一電極的平面示意圖。
附圖中示出了本發明的實施例，本發明可以藉由多種不同形式實現，而並不應解釋為僅局限於這裡所闡述的實施例。相反，提供這些實施例是為了使本發明更為全面和完整的公開，並使本領域的技術人員更充分地瞭解本發明的範圍。為了清晰可見，在圖中，層和區域的尺寸被放大了。
本文中的“微型LED”是指尺寸小於或等於幾百微米或小於等於100微米的LED。
請參閱圖1，本發明第一實施例的微型LED顯示面板100，其包括相對的第一表面101和第二表面103，所述第一表面101和所述第二表面103均為顯示面，也即所述微型LED顯示面板100能夠實現雙面顯示。
請參閱圖2，所述微型LED顯示面板100包括基板10、設置在所述基板10上的畫素電路層20、設置在所述畫素電路層20遠離所述基板10一側的絕緣層30。所述微型LED顯示面板100還包括複數微型LED40，所述複數微型LED40設置在所述畫素電路層20遠離所述基板10一側，且嵌設在所述絕緣層30中。所述複數微型LED40相互間隔設置。所述畫素電路層20包括層疊設置的至少兩個電性絕緣層，以及設置在電性絕緣層中的複數薄膜電晶體(thin film transistor,TFT)21、多條掃描線(圖未示)、多條資料線(圖未示)。
如圖2所示，所述微型LED顯示面板100還包括複數第一電極50以及設置在所述絕緣層30遠離所述基板10一側的至少一第二電極60。所述複數第一電極50相互間隔設置。每一個第一電極50設置在一個微型LED40與所述畫素電路層20之間，即每一個第一電極50位於所述微型LED40靠近所述畫素電路層20的第一端41。微型LED40遠離所述畫素電路層20的第二端42相對所述絕緣層30露出，所述第二電極60覆蓋微型LED40的第二端42。一實施例中，所有的微型LED40共用一個第二電極60，即一個第二電極60覆蓋所有的微型LED40的第二端42。在另一實施例中，也可以是複數微型LED40分組，每組微型LED40共用一個第二電極60；還可以是每一個微型LED40對應的一個第二電極60。第一電極50和第二電極60分別連接在微型LED40靠近和遠離基板10的相對兩端，且互為微型LED40的陰、陽極，當第一電極50和第二電極60之間形成所需的電勢差，微型LED40將發光。
如圖3所示，複數微型LED40呈矩陣排布為沿第一方向延伸的多行(圖3中D1方向)和沿第二方向延伸的多列(圖3中D2方向)。每列微型LED40共用一個第二電極60；每個第二電極60延伸成長條狀以覆蓋 一列微型LED40。微型LED顯示面板100定義有顯示區110和圍繞顯示區110的非顯示區130。複數微型LED40位於顯示區110中。微型LED顯示面板100還包括位於非顯示區130中的驅動IC70。每個第二電極60藉由導線80電性連接驅動IC70。驅動IC70還藉由多條導線80電性連接畫素電路層20以傳遞電信號給畫素電路層20。
所述第二電極60為透明的。當微型LED40發光，光將從第二電極60穿過，使位於所述微型LED顯示面板100的第一表面101一側的使用者能夠看到顯示畫面。
每一個第一電極50與其對應配置的微型LED40相比，第一電極50在基板10上的投影面積要大於微型LED40在基板10上的投影面積，即所述第一電極50延伸超出微型LED40。如圖2所示，每一個第一電極50定義有正對微型LED40的透光區51以及非透光區53，以使微型LED40發出的光能夠穿過第一電極50。本實施例中，所述透光區51為貫穿所述第一電極50的通孔。所述非透光區53為不透明的導電金屬材質。
如圖4所示，第一電極50為圓形，所述透光區51位於中央，呈圓形，所述非透光區53圍繞所述透光區51。在一實施例中，透光區51由透明的導電材料形成，非透光區53由不透光的導電材料形成。
如圖2所示，所述複數TFT21至少具有兩種類型，一種為驅動TFT211，一種為開關TFT213。第一電極50延伸穿過一個電性絕緣層電性連接所述驅動TFT211(具體可為連接驅動TFT211的汲極)，開關TFT213控制所述驅動TFT211的導通和斷開。所述複數TFT21正對第一電極50的非透光區53設置或位於相鄰的兩個微型LED40之間的區域，以使TFT21不會遮擋所述微型LED40發出的光。每一個TFT21為本領域常規的TFT，包括閘極、半導體層、源極和汲極。
可以理解的，為使微型LED40發出的光能夠從基板10的第二表面103射出，還要求所述畫素電路層20正對所述第一電極50的透光區51的區域也為透光的且所述基板10也為透光的。因此，基板10的材質要求為透明的絕緣材料，如透明的塑膠或透明的玻璃；所述畫素電路層20中的電性絕緣層也為透光的，如本領域常規使用的各種透明絕緣材料。
可以理解的，在其他實施例中，所述第一電極50也可為透明的，其為透明導電材料構成，如氧化銦錫。如此整個第一電極50均可透光，而不需要另外設置透光的孔洞。
如圖2所示，所述絕緣層30包括層疊在畫素電路層20上的第一絕緣層31和層疊在第一絕緣層31上的第二絕緣層33。每一個微型LED40嵌設在所述第一絕緣層31和所述第二絕緣層33中並相對所述第二絕緣層33裸露。如圖2所示，第二電極60設置在所述第二絕緣層33遠離所述第一絕緣層31的一側，且第二電極60直接接觸並覆蓋至少一個微型LED40。第一絕緣層31和第二絕緣層33中的至少一種為光吸收材料，例如黑矩陣材料。
可以理解的，如圖2所示，每一個微型LED40包括連接於其第一端41和第二端42之間的側壁43，所述側壁43與所述第一絕緣層31和所述第二絕緣層33相鄰。每一個微型LED40的側壁43上包裹覆蓋有介電層45，以保護微型LED40的外表面並起到絕緣的作用。本實施例中，所述介電層45還延伸部分覆蓋在所述微型LED40遠離所述基板10的第二端42。每一個微型LED40遠離所述基板10的第二端42上未被所述介電層45覆蓋的區域被所述第二電極60覆蓋。
每一個微型LED40的側壁43上還覆蓋有調節電極91，所述調節電極91環繞所述微型LED40的側壁43。所述調節電極91形成在所述介電 層45遠離所述微型LED40的一側，即每一個微型LED40其對應的調節電極91之間設置有所述介電層45。所述調節電極91不接觸所述第一電極50和所述第二電極60且與所述第一電極50和所述第二電極60電性絕緣。
如圖2所示，微型LED顯示面板100還包括連接電極93，所述連接電極93直接連接/接觸每一個微型LED40的調節電極91。本實施例中，所述連接電極93設置於所述第一絕緣層31和所述第二絕緣層33之間。所述調節電極91藉由所述連接電極93被施加一調節電壓，所述調節電壓為一不同於所述微型LED40的陽極和陰極的直流電壓。
所述調節電極91可分別與所述第一電極50和所述第二電極60之間形成電場，進而限制微型LED40中的載流子(電子與空穴)於微型LED40的內部的走向；從而提升微型LED40的性能，進而提升微型LED顯示面板100的顯示效果。
本實施例中，每一個微型LED40為常規的微型LED40，其可包括依次層疊設置的P型摻雜的無機發光材料層(圖未示)、活性層(圖未示)、N型摻雜的無機發光材料層(圖未示)，所述活性層位於所述P型摻雜的無機發光材料層和所述N型摻雜的無機發光材料層之間，其中P型摻雜的無機發光材料層相對靠近所述第一電極50，N型摻雜的無機發光材料層相對遠離所述第一電極50，或者N型摻雜的無機發光材料層相對靠近所述第一電極50，P型摻雜的無機發光材料層相對遠離所述第一電極50。
以上實施例僅用以說明本發明的技術方案而非限制，圖示中出現的上、下、左及右方向僅為了方便理解，儘管參照較佳實施例對本發明進行了詳細說明，本領域的普通技術人員應當理解，可以對本發明的技術方案進行修改或等同替換，而不脫離本發明技術方案的精神和範圍。
101:第一表面
103:第二表面
10:基板
20:畫素電路層
30:絕緣層
40:微型LED
50:第一電極
60:第二電極
41:第一端
42:第二端
51:透光區
53:非透光區
21:TFT
213:開關TFT
211:驅動TFT
31:第一絕緣層
33:第二絕緣層
43:側壁
45:介電層
91:調節電極
93:連接電極

Claims (8)

  1. 一種微型LED顯示面板，其包括：基板；形成在所述基板一表面的畫素驅動電路層，所述畫素驅動電路層包括複數TFT；形成在所述畫素驅動電路層上的絕緣層；以及形成在所述畫素驅動電路層上且嵌設在所述絕緣層中的複數微型LED，每一個微型LED具有靠近所述畫素驅動電路層的第一端和遠離所述畫素驅動電路層且相對所述絕緣層露出的第二端，每一個微型LED的第一端與所述畫素驅動電路層之間設置有第一電極，每一個微型LED的第二端覆蓋連接有第二電極，第二電極為透明的；其改良在於：所述第一電極定義有透光區以使微型LED發出的光能穿過；每一個微型LED包括連接於其第一端和第二端之間的側壁，每一個微型LED的所述側壁上設置有調節電極，所述調節電極與所述第一電極和所述第二電極均電性絕緣。
  2. 如請求項1所述的微型LED顯示面板，其中：所述畫素驅動電路層正對所述第一電極的透光區的區域也為透光的且所述基板為透光的。
  3. 如請求項2所述的微型LED顯示面板，其中：所述複數TFT設置在正對第一電極的透光區以外的區域，以使TFT不會遮擋所述微型LED發出的光。
  4. 如請求項1所述的微型LED顯示面板，其中：每一個第一電極還定義非透光區，所述透光區為貫穿所述第一電極的通孔。
  5. 如請求項1所述的微型LED顯示面板，其中：所述第一電極為透明的。
  6. 如請求項1所述的微型LED顯示面板，其中：每一個第一電極在所述基板上的投影面積要大於與該第一電極對應的微型LED在所述基板上的投影面積。
  7. 如請求項1所述的微型LED顯示面板，其中：每一個微型LED的側壁上覆蓋有介電層；每一個微型LED的側壁與其對應的調節電極之間設置有所述介電層。
  8. 如請求項1所述的微型LED顯示面板，其中：所述絕緣層包括層疊在所述畫素驅動電路層遠離所述基板的一側的第一絕緣層和層疊在所述第一絕緣層遠離所述基板的一側的第二絕緣層；所述複數微型LED嵌設在所述第一絕緣層和第二絕緣層中；所述第一絕緣層和所述第二絕緣層之間還設置有連接電極，所述連接電極直接連接且接觸每一個微型LED的調節電極。
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11387387B2 (en) 2017-10-13 2022-07-12 PlayNitride Display Co., Ltd. Micro light emitting device display apparatus
US11011583B2 (en) * 2018-02-05 2021-05-18 Samsung Electronics Co., Ltd. Image sensors and electronic devices
TWI721435B (zh) * 2018-05-28 2021-03-11 鴻海精密工業股份有限公司 微型發光二極體顯示面板
CN109461386A (zh) * 2019-01-04 2019-03-12 京东方科技集团股份有限公司 显示装置
CN109904174B (zh) * 2019-02-28 2021-01-08 京东方科技集团股份有限公司 一种显示面板的电路背板及其制备方法和显示面板
CN112424941B (zh) * 2019-06-21 2024-02-20 京东方科技集团股份有限公司 微发光二极管、阵列基板、显示设备和制造阵列基板的方法
CN110752209B (zh) * 2019-10-28 2021-04-30 京东方科技集团股份有限公司 一种显示用驱动背板及其制备方法、显示面板
DE102019217228A1 (de) * 2019-11-07 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils
TWI778492B (zh) * 2019-12-25 2022-09-21 錼創顯示科技股份有限公司 顯示裝置
CN111063270B (zh) * 2019-12-30 2022-06-21 錼创显示科技股份有限公司 微型发光元件显示装置
TW202032226A (zh) * 2020-01-14 2020-09-01 友達光電股份有限公司 軟性電路結構
KR20210125220A (ko) * 2020-04-08 2021-10-18 엘지디스플레이 주식회사 투명 마이크로 디스플레이 장치
WO2022000114A1 (en) * 2020-06-28 2022-01-06 Huawei Technologies Co., Ltd. Device and method for manufacturing the same
CN114188462A (zh) * 2021-11-30 2022-03-15 深圳市华星光电半导体显示技术有限公司 显示装置及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200719753A (en) * 2005-11-15 2007-05-16 Au Optronics Corp Active illumination device and display apparatus
TW201318240A (zh) * 2011-09-12 2013-05-01 Sharp Kk 發光裝置、顯示裝置、及照明裝置
CN107104194A (zh) * 2017-05-26 2017-08-29 吉林大学 一种双面发光的无机钙钛矿量子点led及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5754173B2 (ja) * 2011-03-01 2015-07-29 ソニー株式会社 発光ユニットおよび表示装置
TWI440240B (zh) * 2011-04-08 2014-06-01 Chunghwa Picture Tubes Ltd 有機發光二極體裝置
US8987765B2 (en) * 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
CN103400849B (zh) * 2013-08-14 2016-01-13 中国科学院长春光学精密机械与物理研究所 用于显示及照明的微型led阵列器件及制备方法
KR102467420B1 (ko) * 2015-08-31 2022-11-16 삼성디스플레이 주식회사 디스플레이 장치 및 이의 제조 방법
KR102465382B1 (ko) * 2015-08-31 2022-11-10 삼성디스플레이 주식회사 표시장치 및 표시장치의 제조방법
US10177195B2 (en) * 2016-09-30 2019-01-08 Intel Corporation Micro-LED displays
US10325893B2 (en) * 2016-12-13 2019-06-18 Hong Kong Beida Jade Bird Display Limited Mass transfer of micro structures using adhesives
US10431723B2 (en) * 2017-01-31 2019-10-01 Apple Inc. Micro LED mixing cup
CN107170773B (zh) * 2017-05-23 2019-09-17 深圳市华星光电技术有限公司 微发光二极管显示面板及其制作方法
CN107359175B (zh) * 2017-07-25 2020-02-11 上海天马微电子有限公司 微发光二极管显示面板和显示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200719753A (en) * 2005-11-15 2007-05-16 Au Optronics Corp Active illumination device and display apparatus
TW201318240A (zh) * 2011-09-12 2013-05-01 Sharp Kk 發光裝置、顯示裝置、及照明裝置
CN107104194A (zh) * 2017-05-26 2017-08-29 吉林大学 一种双面发光的无机钙钛矿量子点led及其制备方法

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