TWI692797B - Plasma treatment device - Google Patents

Abstract

The present invention provides a plasma processing apparatus that can perform desired plasma processing on a workpiece that is circulated and conveyed by a rotating body according to positions where the passing speed of the surface of the rotating body is different. The present invention includes: a vacuum container; a rotating body; a transport portion that circulates and transports a workpiece through a circumferential transport path by the rotation of the rotating body; a cylindrical portion that extends at an opening at one end toward a transport path inside the vacuum container; The window part divides the gas space of the cylindrical part from the outside; the supply part supplies the process gas to the gas space; and the antenna generates the process gas in the gas space by applying power to the workpiece passing through the transport path The plasma-processed inductively coupled plasma has an adjustment part.

Description

Plasma treatment device

The invention relates to a plasma processing device.

In the manufacturing steps of various products such as semiconductor devices, liquid crystal displays (displays), and disks, thin films such as optical films may be formed on work such as wafers or glass substrates. The thin film can be produced by forming a film of metal or the like with respect to the workpiece, or performing etching, oxidation, nitridation, or other film treatment on the formed film.

Film formation or film treatment can be performed by various methods, and as one of them, there is a method using plasma. In film formation, an inert gas is introduced into a chamber where a target is arranged, and a DC voltage is applied. Ions of plasma-generated inert gas collide with the target, and the material hit from the target accumulates on the workpiece to form a film. In the membrane process, process gas is introduced into the chamber where the electrodes are arranged, and a high-frequency voltage is applied to the electrodes. Membrane treatment is performed by causing active species such as ions and radicals of the plasma process gas to collide with the membrane on the workpiece.

There is a plasma processing apparatus in which a rotating table as a rotating body is installed inside a chamber, and a plurality of film forming units and film processing units are arranged in the circumferential direction above the rotating table Unit so that such film formation and film treatment can be continuously performed (for example, refer to Patent Document 1). As described above, the workpiece is conveyed while being held on the rotating platform, and is passed directly under the film forming unit and the film processing unit, thereby forming an optical film or the like.

In a plasma processing apparatus using a rotating platform, as a membrane processing unit, a cylindrical electrode with an upper end closed and an opening at the lower end (hereinafter, referred to as "cylindrical electrode") is sometimes used. In the case of using a cylindrical electrode, an opening is provided in the upper part of the chamber, and the upper end of the cylindrical electrode is attached to the opening through a barrier. The side wall of the cylindrical electrode extends inside the chamber, and the opening at the lower end faces the rotating platform with a slight gap. The chamber is grounded, the cylindrical electrode functions as an anode, and the chamber and the rotating platform function as a cathode. The process gas is introduced into the cylindrical electrode and a high-frequency voltage is applied to generate plasma. The electrons contained in the generated plasma flow to the rotating platform side serving as a cathode. By passing the workpiece held by the rotating platform under the opening of the cylindrical electrode, active species such as ions and radicals generated by the plasma collide with the workpiece to perform the film treatment. [Prior Art Literature]

[Patent Literature] [Patent Literature 1] Japanese Patent No. 4448873 [Patent Literature 2] Japanese Patent No. 3586198

[Problems to be Solved by the Invention] In recent years, the workpieces to be processed have become larger, and processing efficiency has also been required to increase. Therefore, there has been a tendency to expand the area where plasma is generated to perform film formation and film processing. However, when a voltage is applied to the cylindrical electrode to generate plasma, it may be difficult to generate a wide-range, high-density plasma.

Therefore, a plasma processing apparatus has been developed that can generate a relatively wide-range, high-density plasma to perform membrane processing on large-scale workpieces (for example, refer to Patent Document 2). With regard to such a plasma processing apparatus, the antenna is disposed outside the chamber with a window member such as a dielectric interposed between the gas space into which the process gas is introduced. Furthermore, by applying a high-frequency voltage to the antenna, plasma is generated by inductive coupling in the gas space to perform film processing.

In the plasma processing apparatus using the rotating platform as described above, it is considered that a film processing unit that uses inductively coupled plasma is used as the film processing unit. It is considered that, in this case, in order to suppress an increase in the weight of a window such as a dielectric body, the width of the window such as a dielectric body in the circumferential direction of the rotating platform is made constant. Along with this, it is also considered that the range in which the film processing is performed in the circumferential direction of the rotary table, that is, the width of the processing region is formed in parallel in the radial direction of the rotary table. However, the inner peripheral side and the outer peripheral side of the rotating platform differ in the speed of the surface of the rotating platform passing through the treatment area. That is, the passing speed within the same distance is faster on the outer peripheral side of the rotating platform and slower on the inner peripheral side. When the width of the processing area is formed in parallel in the radial direction of the rotating platform as described above, the outer peripheral side of the surface of the rotating platform passes through the processing area in a shorter time than the inner peripheral side. Therefore, the film processing rate after a certain period of time is small on the outer peripheral side and large on the inner peripheral side.

As such, for example, in the case where the film of niobium or silicon formed by the film-forming portion is subjected to oxidation or nitridation as a film treatment to form a compound film, on the inner and outer circumferential sides of the rotary table, niobium or silicon The degree of oxidation or nitridation of the film will vary greatly. Therefore, it is difficult to achieve a case where the entire workpiece is to be processed uniformly or to change the degree of processing of the desired position of the workpiece.

For example, this problem also occurs when wafers such as semiconductors that are workpieces are arranged in a row on a rotating platform in the circumferential direction to perform plasma processing. Furthermore, from the viewpoint of efficiency of processing and the like, when a plurality of plasma treatments are arranged in the radial direction, it becomes a more significant problem. Specifically, if the radius of the rotating platform exceeds 1.0 m, and the width of the processing area in the radial direction of the rotating platform is as large as 0.5 m, the difference in the processing rate between the inner peripheral side and the outer peripheral side becomes very large .

An object of the present invention is to provide a plasma processing apparatus that can perform a desired plasma processing on a workpiece that is circulated and conveyed by a rotating body according to positions where the surface passing speed of the rotating body is different. [Technical means to solve the problem]

In order to achieve the above object, the plasma processing apparatus of the present invention includes: a vacuum container, which can be set to a vacuum; and a conveying section, which is provided in the vacuum container, has a rotating body that carries a workpiece and rotates, by causing the The rotating body rotates to circulate and transport the workpiece in a circumferential transport path; the cylindrical portion extends in the direction of the transport path inside the vacuum container at one end; the window portion is provided in the cylindrical portion, Dividing the gas space into which the process gas is introduced between the inside of the cylindrical part and the rotating body and the outside of the gas space; the supply part, which supplies the process gas to the gas space; and the antenna , Arranged outside the gas space and in the vicinity of the window, by applying power to generate inductively coupled plasma in the process gas of the gas space, the inductively coupled plasma is used to Workpieces in the conveying path are subjected to plasma treatment; and the supply part supplies the process gas from a plurality of locations at different times from the surface of the rotating body through the plasma treatment processing area, and has a regulating part, so The adjustment unit individually adjusts the supply amount of the process gas per unit time of the plurality of parts of the supply unit according to the elapsed time.

It may include: a plurality of supply ports provided in correspondence with the plurality of locations where the supply part supplies the process gas; and a dispersing plate, which is arranged at a position opposed to the supply port at intervals, so that The supplied process gas is dispersed and flows into the gas space.

The flow path of the process gas between the dispersion plate and the supply port may be closed on the rotating body side and communicate with the gas space on the window portion side.

The adjustment unit may adjust the supply amount of the process gas introduced from each supply port according to the position in the direction crossing the transport path.

It has a film-forming part, which is provided at a position opposed to the workpiece circulated and transported on the conveying path, and deposits a film-forming material on the workpiece by sputtering to form a film. The film of the film-forming material deposited on the workpiece by the film-forming portion is subjected to a film treatment using the inductive coupling plasma.

The supply port corresponds to a film forming area of the film forming portion and is provided in an annular film forming area along the conveying path, and is also provided outside the film forming area and is provided outside the film forming area The supply port can be excluded from the adjustment target of the supply amount of the process gas of the adjustment unit.

The supply port may be disposed at a position facing the gas space in the direction along the conveyance path.

The adjustment unit may adjust the supply amount of the process gas introduced from each gas inlet according to the film thickness formed on the workpiece and the elapsed time. [Effect of invention]

According to the present invention, it is possible to perform a desired plasma treatment on the workpiece circulated and conveyed by the rotating body according to the positions where the passing speeds of the surface of the rotating body are different.

The embodiment of the present invention (hereinafter, referred to as the present embodiment) will be specifically described with reference to the drawings. [Summary] The plasma processing apparatus 100 shown in FIG. 1 is an apparatus that forms a compound film on the surface of each work W by using plasma. That is, as shown in FIGS. 1 to 3, in the plasma processing apparatus 100, when the rotating body 31 rotates, the workpiece W on the tray 34 held by the holding portion 33 moves along a circumferential trajectory. With this movement, the workpiece W repeatedly passes through the position facing the film forming portion 40A, the film forming portion 40B, or the film forming portion 40C. Each time the passage passes, the particles of the target materials 41A to 41C are attached to the surface of the workpiece W by sputtering. In addition, the workpiece W repeatedly passes through a position facing the film processing section 50A or the film processing section 50B. Each time the passage passes, the particles attached to the surface of the workpiece W combine with the substances in the introduced process gas G2 to form a compound film.

[Structure] As shown in FIGS. 1 to 3, this plasma processing apparatus 100 includes a vacuum container 20, a conveying unit 30, a film forming unit 40A, a film forming unit 40B, a film forming unit 40C, a film processing unit 50A, and a film The processing unit 50B, the load lock unit 60, and the control device 70.

[Vacuum container] The vacuum container 20 is a container that can be evacuated inside, that is, a so-called chamber. The vacuum container 20 forms a vacuum chamber 21 inside. The vacuum chamber 21 is a cylindrical sealed space surrounded by a top plate 20 a, an inner bottom surface 20 b, and an inner peripheral surface 20 c inside the vacuum container 20. The vacuum chamber 21 has airtightness and can be set to vacuum by depressurization. In addition, the top plate 20a of the vacuum container 20 is configured to be openable and closable.

The reaction gas G is introduced into a predetermined area inside the vacuum chamber 21. The reaction gas G includes a sputtering gas G1 for film formation and a process gas G2 for film processing (see FIG. 3 ). In the following description, when the sputtering gas G1 and the process gas G2 are not distinguished, they are sometimes referred to as reaction gas G. The sputtering gas G1 is a gas used to cause generated ions to collide with the target 41A to the target 41C using the plasma generated by applying electric power, so that the material of the target 41A to the target 41C accumulates on the surface of the work W . For example, an inert gas such as argon gas can be used as the sputtering gas G1.

The process gas G2 is a gas for infiltrating the generated active species into the film deposited on the surface of the workpiece W using plasma generated by inductive coupling to form a compound film. Hereinafter, such surface treatment using plasma, that is, treatment without using the target 41A to 41C may be referred to as reverse sputtering. The process gas G2 can be appropriately changed according to the purpose of the treatment. For example, when performing nitrogen oxidation of the film, a mixed gas of oxygen O ₂ and nitrogen N ₂ is used.

As shown in FIG. 3, the vacuum container 20 has an exhaust port 22 and an introduction port 24. The exhaust port 22 is an opening for ensuring the gas flow between the vacuum chamber 21 and the outside to exhaust the air E. The exhaust port 22 is formed at the bottom of the vacuum container 20, for example. An exhaust section 23 is connected to the exhaust port 22. The exhaust unit 23 has piping, pumps, valves, and the like not shown. By the exhaust treatment using the exhaust unit 23, the inside of the vacuum chamber 21 is decompressed.

The inlet 24 is an opening for introducing the sputtering gas G1 to each of the film forming portion 40A, the film forming portion 40B, and the film forming portion 40C. The inlet 24 is provided at the upper part of the vacuum container 20, for example. A gas supply unit 25 is connected to the inlet 24. In addition to piping, the gas supply unit 25 includes a gas supply source of a reaction gas G (not shown), a pump, a valve, and the like. The gas supply part 25 introduces the sputter gas G1 from the inlet 24 into the vacuum chamber 21. In addition, as will be described later, an opening 21 a into which the film processing section 50A and the film processing section 50B are inserted is provided in the upper portion of the vacuum container 20.

[Transport Unit] The outline of the transport unit 30 will be described. The transport unit 30 has a rotating body 31 provided in the vacuum container 20. The rotating body 31 carries the work W. The transport unit 30 is a device that circulates and transports the workpiece W through the circumferential transport path T by rotating the rotating body 31. The cyclic conveying means that the workpiece W is moved around in a circle on a circular path. The transport path T is a trajectory that moves the workpiece W or the tray 34 described later by the transport unit 30, and is a ring-shaped ring with a width. The details of the transport unit 30 will be described below.

The rotating body 31 is a circular plate-shaped rotating platform. The rotating body 31 may be, for example, one having aluminum oxide sprayed on the surface of a stainless steel plate-shaped member. Hereinafter, when it is abbreviated as "circumferential direction", it means "the circumferential direction of the rotating body 31", and when it is abbreviated as "radial direction", it means the "radial direction of the rotating body 31". In this embodiment, a flat substrate is used as an example of the workpiece W, but the type, shape, and material of the plasma-processed workpiece W are not limited to specific ones. For example, a curved substrate having a concave portion or a convex portion in the center may be used. In addition, a substrate containing a conductive material such as metal or carbon, a substrate containing an insulator such as glass or rubber, or a substrate containing a semiconductor such as silicon may also be used. In addition, the number of workpieces W subjected to plasma treatment is not limited to a specific number.

In addition to the rotating body 31, the transport unit 30 has a motor 32 and a holding unit 33. The motor 32 is a driving source that provides a driving force to rotate the rotating body 31 about the center of the circle. The holding unit 33 is a component that holds the tray 34 transported by the transport unit 30. On the surface of the rotating body 31, a plurality of holding portions 33 are arranged at equal positions on the circumference. The surface of the rotating body 31 described in this embodiment is a top surface which is a surface facing upward when the rotating body 31 is in the horizontal direction. For example, the region where each holding portion 33 holds the tray 34 is formed in a direction parallel to the tangent of the circle of the rotating body 31 in the circumferential direction, and is provided at equal intervals in the circumferential direction. More specifically, the holding portion 33 is a groove, hole, protrusion, jig, holder, or the like that holds the tray 34, and can be configured by a mechanical chuck or an adhesive chuck.

The pallet 34 is a member having a flat placement surface on which the work W is mounted on one side of a square flat plate. The material of the tray 34 is preferably a material with high thermal conductivity, such as metal. In the present embodiment, the material of the tray 34 is stainless steel (SUS). In addition, the material of the tray 34 may be, for example, ceramic or resin having good thermal conductivity or a composite material of these. The workpiece W may be directly mounted on the mounting surface of the tray 34, or may be mounted indirectly via a frame having an adhesive sheet or the like. For each pallet 34, a single workpiece W or a plurality of workpieces W may be mounted.

In this embodiment, since six holding portions 33 are provided, six trays 34 are held on the rotating body 31 at intervals of 60°. However, there may be one holding portion 33 or a plurality of holding portions 33. The rotating body 31 circulates and transports the pallet 34 on which the work W is mounted and repeatedly passes through positions facing the film forming section 40A, the film forming section 40B, the film forming section 40C, the film processing section 50A, and the film processing section 50B.

Film-forming part Film-forming part 40A, film-forming part 40B, film-forming part 40C are provided at positions opposed to the workpiece W circulated and transported on the transfer path T, and the film-forming material is deposited on the workpiece W by sputtering To form the processing section of the film. Hereinafter, the description will be made in the form of the film forming portion 40 without distinguishing the plurality of film forming portions 40A, 40B, and 40C. As shown in FIG. 3, the film forming section 40 includes a sputtering source 4, a dividing section 44, and a power supply section 6.

(Sputtering Source) The sputtering source 4 is a supply source of a film-forming material that deposits a film-forming material on the workpiece W by sputtering to form a film. As shown in FIGS. 2 and 3, the sputtering source 4 includes a target 41A, a target 41B, a target 41C, a backing plate 42 and an electrode 43. The target 41A, the target 41B, and the target 41C are formed of a film-forming material deposited on the workpiece W to form a film, and are disposed at positions facing and separated from the transport path T.

In the present embodiment, the three targets 41A, 41B, and 41C are provided at positions aligned on the apex of the triangle in plan view. The target 41A, the target 41B, and the target 41C are arranged in this order from the vicinity of the rotation center of the rotating body 31 toward the outer periphery. Hereinafter, the target 41 will be described without distinguishing the target 41A, the target 41B, and the target 41C. The surface of the target 41 is spaced and opposed to the workpiece W moved by the conveyance unit 30. In addition, the area where the film forming material can be attached by the three targets 41A, 41B, and 41C is larger than the size of the tray 34 in the radial direction. As described above, corresponding to the area where the film is formed by the film forming portion 40, the annular area along the transport path T is referred to as the film forming area F (indicated by the dotted line in FIG. 2 ). The width of the film formation area F in the radial direction is longer than the width of the tray 34 in the radial direction. In this embodiment, the three targets 41A to 41C are arranged so that the film forming material can be attached to the entire width of the film forming area F in the radial direction without gaps.

As the film-forming material, for example, niobium, silicon, or the like is used. However, if the film is formed by sputtering, various materials can be applied. In addition, the target 41 has a cylindrical shape, for example. However, other shapes such as a long cylindrical shape and a rectangular column shape are also possible.

The back plate 42 is a member that holds the target 41A, the target 41B, and the target 41C individually. The electrode 43 is a conductive member that individually applies electric power to each of the target 41A, the target 41B, and the target 41C from outside the vacuum container 20. The electric power applied to each of the target 41A, the target 41B, and the target 41C can be individually changed. In addition, the sputtering source 4 is appropriately provided with a magnet, a cooling mechanism, etc. as necessary.

(Division Part) The division part 44 is a film forming part M2, a film forming part M4, a film forming part M5, a film processing part M1, and a film processing part M3 where the film W is formed by the sputtering source 4 to form a film The component to be divided. As shown in FIG. 2, the dividing portion 44 is a square wall plate radially arranged from the rotation center of the rotating body 31 of the conveying portion 30. For example, as shown in FIG. 1, the partition 44 is provided between the film processing section 50A, the film forming section 40A, the film processing section 50B, the film forming section 40B, and the film forming section 40C of the top plate 20 a of the vacuum chamber 21. The lower end of the partition 44 opens a gap through which the workpiece W passes and faces the rotating body 31. The presence of the partition 44 can suppress the diffusion of the reaction gas G and the film-forming material in the film forming site M2, film forming site M4, and film forming site M5 into the vacuum chamber 21.

The horizontal ranges of the film forming site M2, the film forming site M4, and the film forming site M5 become regions divided by the pair of divided parts 44. In addition, the workpiece W circulated and conveyed by the rotating body 31 repeatedly passes through the positions of the film forming site M2, the film forming site M4, and the film forming site M5 facing the target 41, whereby the film forming material is deposited in the form of a film The surface of the workpiece W. The film formation site M2, the film formation site M4, and the film formation site M5 are regions where most of the film formation is performed. However, even in an area beyond the above region, there is leakage of the film formation material, so there is not completely no film accumulation. That is, the region where the film formation is performed becomes a region slightly wider than each of the film formation site M2, the film formation site M4, and the film formation site M5.

(Power supply unit) The power supply unit 6 is a component that applies power to the target 41. By applying power to the target 41 using the power supply unit 6, plasma-sputtered gas G1 is generated. In addition, the ions generated by the plasma collide with the target, so that the film-forming material that has hit the target can accumulate on the workpiece W. The electric power applied to each of the target 41A, the target 41B, and the target 41C can be individually changed. In the present embodiment, the power supply unit 6 is, for example, a direct current (DC) power supply that applies a high voltage. In addition, in the case of an apparatus that performs high-frequency sputtering, a radio frequency (Radio Frequency, RF) power supply may also be used. In addition, the power supply unit 6 may be provided for each of the film forming unit 40A, the film forming unit 40B, and the film forming unit 40C, or only one of the plurality of film forming units 40A, the film forming unit 40B, and the film forming unit 40C. When only one power supply unit 6 is provided, the application of the used power is switched. The rotating body 31 and the grounded vacuum container 20 have the same potential, and a high voltage is applied to the target 41 side to generate a potential difference.

The plurality of film forming portions 40A, 40B, and 40C can be formed simultaneously by using the same film forming material, which can increase the film forming amount in a certain time, that is, the film forming rate. In addition, the film-forming part 40A, the film-forming part 40B, and the film-forming part 40C may form a film including layers of a plurality of film-forming materials by using different types of film-forming materials.

In this embodiment, as shown in FIG. 2, three film forming sections 40A, 40B, and film formation are arranged between the film processing section 50A and the film processing section 50B in the transport direction of the transport path T部40C. The film forming site M2, the film forming site M4, and the film forming site M5 correspond to the three film forming parts 40A, the film forming part 40B, and the film forming part 40C. The film processing site M1 and the film processing site M3 correspond to the two film processing units 50A and 50B.

[Film Processing Unit] The film processing unit 50A and the film processing unit 50B are processing units that perform film processing on the material deposited on the workpiece W transported by the transport unit 30. The film treatment is reverse sputtering without using the target 41. Hereinafter, the film processing unit 50 will be described without distinguishing the film processing unit 50A and the film processing unit 50B. The film processing section 50 has a processing unit 5. The configuration example of the processing unit 5 will be described with reference to FIGS. 3 to 6.

As shown in FIGS. 3 and 4, the processing unit 5 includes a cylindrical portion H, a window portion 52, a supply portion 53, an adjustment portion 54 (see FIG. 8 ), and an antenna 55. The cylindrical portion H is a cylindrical structural portion that extends in a direction in which the opening Ho at one end faces the transport path T inside the vacuum container 20. The cylindrical part H has a cylindrical body 51, a cooling part 56, and a dispersion part 57. Among these members constituting the cylindrical portion H, first, the cylindrical body 51 will be described, and the cooling portion 56 and the dispersion portion 57 will be described later. The cylindrical body 51 is a cylinder having a rectangular cross section with rounded corners. The rounded rectangular shape described here is a track shape of track and field. The track shape refers to a shape in which a pair of partial circles are separated and opposed in the opposite direction of the convex side, and the two ends are connected by straight lines parallel to each other. The cylindrical body 51 is made of the same material as the rotating body 31. The cylindrical body 51 is inserted into the opening 21a provided in the top plate 20a of the vacuum container 20 such that the opening 51a is spaced from the rotating body 31 side and faces each other. As a result, most of the side walls of the cylindrical body 51 are accommodated in the vacuum chamber 21. The cylindrical body 51 is arranged so that the longitudinal direction thereof is parallel to the radial direction of the rotating body 31. In addition, it does not need to be strictly parallel, but can also be slightly inclined. In addition, the processing area, which is a plasma processing or film processing area, has a rounded rectangular shape similar to the opening 51 a of the cylindrical body 51. That is, the width of the processing area in the rotation direction is the same in the radial direction.

As shown in FIGS. 4 and 5, an inner flange 511 is formed at one end of the cylindrical body 51 over the entire circumference. The inner flange 511 is a thick-walled portion that protrudes so that the inner edge of one end of the cylindrical body 51 extends over the entire circumference so that the vertical section perpendicular to the outer periphery is L-shaped. The innermost edge of the inner flange 511 is a rounded rectangular opening 51a having a shape substantially similar to the cross section of the cylindrical body 51. The inner flange 511 has a shed surface 511a, a shed surface 511b, and a shed surface 511c that gradually become lower as it approaches the opening 51a from the inner wall of the cylindrical body 51, and thus has a stepped shape.

As shown in FIGS. 7 and 8, a plurality of supply ports 512A to 512D and supply ports 512 a to 512 d are formed in the inner flange 511. Hereinafter, the description will be made with respect to the supply port 512 without distinguishing the supply ports 512A to 512D and the supply ports 512a to 512d. As shown in FIGS. 4 and 5, the supply port 512 is a hole for supplying the process gas G2 into the cylindrical body 51. As shown in FIG. 5, each supply port 512 penetrates from the ceiling surface 511 a to the opening 51 a so as to be L-shaped.

Here, if the center side (inner peripheral side) and the outer peripheral side of the rotating body 31 of the work W mounted on the rotating body 31 are compared, a difference in speed passing through a certain distance occurs. That is, in the present embodiment, the cylindrical body 51 is arranged so that the longitudinal direction is parallel to the radial direction of the rotating body 31. Furthermore, the linear portions of the opening 51a in which the plurality of supply ports 512 are formed are parallel to each other in the radial direction. In the case of such a configuration, the outer peripheral side of the rotating body 31 is shorter than the inner peripheral side with respect to the time when the workpiece W passes a certain distance below the cylindrical body 51. Therefore, the plurality of supply ports 512 are provided at a plurality of locations where the surface of the rotating body 31 passes through the plasma treatment area at different times. The direction in which the plurality of supply ports 512 are arranged crosses the transport path T. Furthermore, the supply port 512 is disposed at a position facing each other across the gas space R. The arrangement direction of the supply ports 512 facing each other across the gas space R is along the transport path T.

More specifically, as shown in FIG. 8, the supply ports 512A to 512D are arranged at regular intervals along an inner wall in the longitudinal direction of the cylindrical body 51, that is, in the longitudinal direction. The supply ports 512a to 512d are arranged at equal intervals along the other inner wall of the cylindrical body 51 in the longitudinal direction. The supply ports 512A to 512D are arranged from the inner peripheral side to the outer peripheral side in the order of the supply port 512A, the supply port 512B, the supply port 512C, and the supply port 512D. Similarly, the supply ports 512a to 512d are arranged in the order of the supply port 512a, the supply port 512b, the supply port 512c, and the supply port 512d. The supply ports 512A to 512D are arranged on the downstream side of the transport path T, and the supply ports 512a to 512d are arranged on the upstream side of the transport path T. The supply port 512A and the supply port 512a, the supply port 512B and the supply port 512b, the supply port 512C and the supply port 512c, the supply port 512D and the supply port 512d face the downstream side and the upstream side, respectively.

Furthermore, as shown in FIG. 4, an outer flange 51 b is formed at the end of the cylindrical body 51 on the side opposite to the opening 51 a. An O-ring 21b is arranged over the entire circumference between the lower surface of the outer flange 51b and the top surface of the vacuum container 20, so that the opening 21a is hermetically sealed.

The window portion 52 is provided in the cylindrical portion H and divides the gas space R into which the process gas G2 is introduced into the vacuum container 20 from the outside. In this embodiment, the window portion 52 is provided in the cylindrical body 51 constituting the cylindrical portion H. The gas space R is a space formed between the rotating body 31 and the inside of the cylindrical portion H in the film processing section 50, and the work W circulated and conveyed by the rotating body 31 repeatedly passes by. The window portion 52 is a flat plate of a dielectric body housed inside the cylindrical body 51 and having a shape substantially similar to the horizontal cross-section of the cylindrical body 51. The window portion 52 is placed on an O-ring 21b to hermetically seal the opening 51a, and the O-ring 21b is fitted into a groove formed in a circumferential shape on the shed surface 511b. In addition, the window portion 52 may be a dielectric material such as alumina or a semiconductor such as silicon.

As shown in FIGS. 4, 6 and 8, the supply unit 53 supplies the process gas G2 to the gas space R. The supply unit 53 is a device that supplies the process gas G2 at a plurality of locations at different times when the surface of the rotating body 31 passes through the treatment area. The plurality of positions correspond to the arrangement positions of the supply ports 512 in the longitudinal direction of the cylindrical body 51. Specifically, the supply unit 53 includes a supply source of process gas G2 such as a gas cylinder (not shown), and a piping 53a, a piping 53b, and a piping 53c connected thereto. The process gas G2 is, for example, oxygen and nitrogen. The piping 53a is a pair of paths from the supply source of each process gas G2. That is, it includes the path connected to the supply source of oxygen and the path connected to the supply source of nitrogen. Four pipes 53a are provided corresponding to the arrangement positions of the supply ports 512. The piping 53b is a path connecting the piping 53a which is a pair of paths. Each pipe 53b is connected to each supply port 512A to supply port 512D in a row. Moreover, the piping 53c branched from each piping 53b is connected to each supply port 512a-512d of another row, respectively.

The front ends of the branched pipes 53c extend from the outer flange 51b side along the inner wall of the cylindrical body 51 to the opening 51a side, and are connected to the ends of the supply port 512 on the shed surface 511a side. The piping 53b is similarly connected to the end of the supply port 512 on the side of the shed surface 511a. As a result, the supply unit 53 supplies the process gas G2 to the gas space through the supply ports 512A to 512D and the supply ports 512a to 512d arranged in a row as described above, and the process gas G2 is supplied to the gas space at a plurality of locations with different velocities passed by the workpiece W R. That is, the supply port 512A to the supply port 512D and the supply port 512a to the supply port 512d are provided corresponding to a plurality of locations where the supply portion 53 supplies the process gas G2. In this embodiment, the innermost supply port 512A, the supply port 512a, the outermost supply port 512D, and the supply port 512d are located outside the film formation region F.

As shown in FIG. 8, the adjustment unit 54 adjusts the supply amount of the process gas G2 introduced from each supply port 512 according to the position in the direction crossing the transport path T. That is, the adjustment unit 54 individually adjusts the supply amount of the process gas G2 per unit time of the plurality of parts of the supply unit 53 according to the time when the surface of the rotating body 31 passes through the treatment area. The regulator 54 has a mass flow controller (MFC) 54a provided in a pair of paths of the piping 53a, respectively. The MFC 54a is a component having a mass flow meter that measures the flow rate of a fluid and a solenoid valve that controls the flow rate.

As shown in FIGS. 4, 7 and 9, the antenna 55 is a member that generates inductively coupled plasma for processing the workpiece W passing through the transport path T. The antenna 55 is arranged outside the gas space R and in the vicinity of the window 52. By applying power to the antenna 55, an electric field induced by the magnetic field formed by the antenna current is generated, and the process gas G2 in the gas space R is plasmatized. The antenna 55 can change the distribution shape of the generated inductive coupling plasma according to its shape. In other words, the distribution shape of the inductive coupling plasma can be determined by the shape of the antenna 55. In the present embodiment, by setting the antenna 55 to the shape shown below, an inductive coupling plasma having a shape substantially similar to the horizontal cross section of the gas space R can be generated.

The antenna 55 has a plurality of conductors 551a to 551d and a capacitor 552. The plurality of conductors 551 are strip-shaped conductive members, which are connected to each other via the capacitor 552 to form a circuit with a rounded rectangle when viewed in the plane direction. The outer shape of the antenna 55 is below the opening 51a.

Each capacitor 552 has a substantially cylindrical shape, and is connected in series between the conductor 551a, the conductor 551b, the conductor 551c, and the conductor 551d. If the antenna 55 is composed of only conductors, the voltage amplitude at the end of the power supply side becomes excessively large, and the window portion 52 is partially weakened. Therefore, the capacitor 552 is connected by dividing the conductor, and a small voltage amplitude is generated at the end of each conductor 551a, conductor 551b, conductor 551c, and conductor 551d, thereby suppressing the weakening of the window portion 52.

However, in the portion of the capacitor 552, the connectivity of the conductor 551a, the conductor 551b, the conductor 551c, and the conductor 551d is blocked, and the plasma density decreases. Therefore, the end portions of the conductor 551a, the conductor 551b, the conductor 551c, and the conductor 551d opposed to the window portion 52 are configured to overlap each other in the planar direction and sandwich the capacitor 552 from the vertical direction. More specifically, as shown in FIG. 9, the connection ends of the conductor 551a, the conductor 551b, the conductor 551c, and the conductor 551d with respect to the capacitor 552 are curved so that the cross section becomes an inverted L-shape. A gap that sandwiches the capacitor 552 from above and below is provided on the horizontal surface of the ends of the adjacent conductors 551a and 551b. Similarly, gaps sandwiching the capacitor 552 from the vertical direction are provided in the horizontal surfaces of the ends of the conductor 551b and the conductor 551c, and the horizontal surfaces of the ends of the conductor 551c and the conductor 551d, respectively.

An RF power source 55a for applying high-frequency power is connected to the antenna 55. A matching box 55b as a matching circuit is connected in series on the output side of the RF power source 55a. For example, one end of the conductor 551d is connected to the RF power source 55a. In the example, the conductor 551a is the ground side. A matching box 55b is connected between the RF power source 55a and one end of the conductor 551d. The matching box 55b stabilizes the discharge of the plasma by integrating the impedance on the input side and the output side.

As shown in FIGS. 4 to 6, the cooling portion 56 is a cylindrical member with a rounded rectangular shape whose outer size is approximately the same as that of the cylindrical body 51, and is provided on the upper surface thereof in contact with and in contact with the bottom surface of the cylindrical body 51. Match the location. Although not shown, a cavity in which cooling water flows is provided inside the cooling portion 56. A supply port and a drain port connected to a cooler, which is a cooling water circulation device that circulates and supplies cooling water, are connected at the cavity. By repeatedly performing the following operations using the cooler, the cooling section 56 is cooled and the heating of the cylindrical body 51 and the dispersing section 57 is suppressed. The operation is to supply cooled cooling water from the supply port and circulate in the cavity. Discharge from the drain.

The dispersing portion 57 is a cylindrical member with a rounded rectangular shape whose outer dimensions are substantially the same as that of the cylindrical body 51 and the cooling portion 56, and is provided at a position where its upper surface contacts and coincides with the bottom surface of the cooling portion 56. The bottom surface is provided with an opening Ho of the cylindrical portion H. The dispersing section 57 is provided with a dispersing plate 57a. The dispersion plate 57a is spaced apart from the supply port 512 and is arranged at a position facing the supply port 512, and disperses the process gas G2 introduced from the supply port 512 and flows into the gas space R. The width of the annular portion of the dispersing portion 57 in the horizontal direction is larger than that of the cylindrical body 51 and the portion where the dispersing plate 57 a is provided on the inner side.

More specifically, the dispersion plate 57 a stands from the inner edge of the dispersion portion 57 over the entire circumference, extends beyond the cooling portion 56 and extends to a position close to the bottom surface of the window portion 52. As shown in FIG. 5, the flow path of the process gas G2 between the dispersion plate 57 a and the supply port 512 is closed on the side of the rotating body 31 and communicates with the gas space R on the side of the window 52. That is, an annular gap is formed between the inner flange 511 and the dispersing plate 57 a to communicate with the gas space R below the window 52 along the lower surface of the window 52.

In addition, the vertical distance between the bottom surface of the dispersing portion 57 and the surface of the rotating body 31 has a length through which the workpiece W in the transport path T can pass. In addition, since the dispersion plate 57a enters the gas space R in the cylindrical body 51, the plasma generation area in the gas space R becomes the space inside the dispersion plate 57a. In addition, the distance between the dispersion plate 57a and the window 52 is set to, for example, 1 mm to 5 mm. If the distance is set to 5 mm or less, abnormal discharge in the gap can be prevented.

The process gas G2 is introduced into the gas space R from the supply unit 53 through the supply port 512, and a high-frequency voltage is applied to the antenna 55 from the RF power source 55a. In this way, an electric field is generated in the gas space R through the window portion 52 and the process gas G2 is plasmatized. Thereby, active species such as electrons, ions and free radicals are generated.

[Load lock section] The load lock section 60 is to carry the pallet 34 on which the unprocessed workpiece W is loaded into the vacuum chamber 21 from the outside by a conveying device (not shown) while maintaining the vacuum of the vacuum chamber 21, and A device for carrying out the tray 34 on which the processed workpiece W is mounted to the outside of the vacuum chamber 21. A well-known structure can be applied to the load lock unit 60, and therefore its description is omitted.

[Control Device] The control device 70 is a device that controls each part of the plasma processing device 100. The control device 70 may be constituted by, for example, a dedicated electronic circuit or a computer operating with a predetermined program. That is, the control contents related to the introduction and exhaust of the sputtering gas G1 and the process gas G2 into the vacuum chamber 21, the control of the power supply unit 6, the RF power supply 55a, and the rotation of the rotating body 31 have been programmed. . The control device 70 executes the program by a processing device such as a programmable logic controller (PLC) or a central processing unit (CPU), and can correspond to various plasma processing styles.

If the specific controlled objects are listed, they are as follows. That is, the rotation speed of the motor 32, the initial exhaust pressure of the plasma processing apparatus 100, the selection of the sputtering source 4, the applied power to the target 41 and the antenna 55, the flow rates and types of the sputtering gas G1 and the process gas G2, Introduction time and exhaust time, film formation and film treatment time, etc.

In particular, in the present embodiment, the control device 70 controls the film forming rate by controlling the application of electric power to the target 41 of the film forming section 40 and the supply amount of the sputtering gas G1 from the gas supply section 25. In addition, the control device 70 controls the film processing rate by controlling the application of power to the antenna 55 and the supply amount of the process gas G2 from the supply unit 53.

The configuration of the control device 70 for performing the operation of each unit in the above-described manner will be described based on FIG. 10 which is a virtual functional block diagram. That is, the control device 70 includes a mechanism control unit 71, a power supply control unit 72, a gas control unit 73, a storage unit 74, a setting unit 75, and an input/output control unit 76.

The mechanism control unit 71 is a processing unit that controls driving sources such as the exhaust unit 23, the gas supply unit 25, the supply unit 53, the adjustment unit 54, the motor 32, the load lock unit 60, and the like, solenoid valves, switches, and power supplies. The power supply control unit 72 is a processing unit that controls the power supply unit 6 and the RF power supply 55a. For example, the power supply control unit 72 individually controls the power applied to the target 41A, the target 41B, and the target 41C. In order to make the film forming rate uniform over the entire workpiece W, the power is sequentially increased so that the target 41A<target 41B<target 41C in consideration of the speed difference between the inner peripheral side and the outer peripheral side. That is, it is only necessary to determine the electric power in proportion to the speeds on the inner peripheral side and the outer peripheral side. However, proportional control is an example, and the higher the speed, the higher the power, as long as the processing rate becomes uniform. In addition, it is only necessary to increase the power applied to the target 41 for the portion to be thickened by the film thickness formed on the workpiece W, and to reduce the power applied to the target 41 for the portion to be thinned.

The gas control unit 73 is a processing unit that controls the introduction amount of the process gas G2 by the regulator 54. For example, the supply amount of process gas G2 from each supply port 512 per unit time is individually controlled. In order to make the film processing rate uniform over the entire workpiece W, the amount of supply from each supply port 512 is sequentially increased from the inner peripheral side to the outer peripheral side in consideration of the speed difference between the inner peripheral side and the outer peripheral side. Specifically, the supply amount is set to supply port 512A<supply port 512B<supply port 512C<supply port 512D, supply port 512a<supply port 512b<supply port 512c<supply port 512d. That is, it is sufficient to determine the supply amount in proportion to the speeds on the inner peripheral side and the outer peripheral side. In addition, the supply amount of the process gas G2 supplied from each supply port 512 is adjusted according to the film thickness formed on the workpiece W. That is, for the portion where the film thickness is thickened, the supply amount of the process gas G2 is increased to increase the amount of film processing. In addition, for the portion where the film thickness is reduced, the supply amount of the process gas G2 is reduced to reduce the amount of film processing. In addition, for example, in the case of performing a film treatment on a film formed so that the film thickness becomes thicker toward the inner peripheral side, the supply amount of the process gas G2 may be set to be closer to the inner peripheral side. By this, the relationship with the speed is also combined, and as a result, the supply amount from each supply port 512 may become uniform. That is, the adjustment unit 54 may adjust the supply amount of the process gas G2 supplied from each supply port 512 according to the film thickness formed on the workpiece W and the time when the rotating body 31 passes through the processing area. In addition, the gas control unit 73 also controls the introduction amount of the sputtering gas G1.

The storage unit 74 is a component that stores information necessary for the control of this embodiment. The information stored in the storage section 74 includes the exhaust amount of the exhaust section 23, the power applied to each target 41, the supply amount of the sputtering gas G1, the power applied to the antenna 55, and the process gas G2 for each supply port 512 Of supply. The setting unit 75 is a processing unit that sets information input from the outside in the storage unit 74. In addition, the power applied to the antenna 55 is determined by, for example, the desired film thickness of the film formed while the rotating body 31 rotates once and the rotation speed (rpm) of the rotating body 31.

Furthermore, the electric power applied to the target 41A, the target 41B, and the target 41C may be related to the supply amount of the process gas G2 from the supply port 512A to the supply port 512D, the supply port 512a to the supply port 512d. That is, when the rotation speed (rpm) of the rotating body 31 is set to be constant, and the electric power applied to the target 41A, the target 41B, and the target 41C is set by the setting section, it may be set in proportion to each The supply amounts of the supply port 512A to the supply port 512D and the supply port 512a to the supply port 512d. In addition, when the rotation speed (rpm) of the rotating body 31 is set to be constant, and the supply amount from each supply port 512A to supply port 512D, supply port 512a to supply port 512d is set by the setting unit, it may be The power applied to each target 41A, target 41B, and target 41C is set proportionally.

Such settings can be made as follows, for example. First, the relationship between the film thickness and the applied power or the supply amount of the process gas G2 corresponding thereto, and the relationship between the applied power and the supply amount of the process gas G2 corresponding thereto are obtained through experiments or the like in advance. Furthermore, at least one of these is tabulated and stored in the storage unit 74 in advance. Further, the setting unit 75 determines the applied power or the supply amount based on the input film thickness, the applied power or the supply amount, and refers to the table.

The input/output control unit 76 is an interface that controls signal conversion and input/output with each unit to be controlled. Furthermore, an input device 77 and an output device 78 are connected to the control device 70. The input device 77 is used to allow an operator to operate an input device such as a switch, a touch screen, a keyboard, and a mouse of the plasma processing apparatus 100 via the control device 70. For example, the input device can be used to input the selection of the film forming unit 40 and the film processing unit 50 to be used, the desired film thickness, the applied power of each target 41A to 41C, and each supply port 512A to supply port 512D, the supply amount of the process gas G2 from the supply port 512a to the supply port 512d, and the like.

The output device 78 is an output device such as a display, a lamp, or a meter that uses information to confirm the state of the device in a state that the operator can visually recognize. For example, the output device 78 may display an input screen of information from the input device 77. In this case, the target 41A, the target 41B, the target 41C, the supply ports 512A to 512D, the supply port 512a to the supply port 512d may be displayed in a schematic view, and the respective positions may be selected to input numerical values. Furthermore, the target 41A, the target 41B, the target 41C, each of the supply port 512A to the supply port 512D, the supply port 512a to the supply port 512d may be displayed in a schematic diagram, and the respective set values may be displayed numerically.

[Operation] Hereinafter, the operation of the present embodiment as described above will be described with reference to FIGS. 1 to 10 described above. In addition, although not shown in the figure, in the plasma processing apparatus 100, the pallet 34 on which the work W is mounted is carried in, carried out, and carried out by conveying equipment such as a conveyor, a robot arm, or the like.

The plurality of trays 34 are sequentially carried into the vacuum container 20 by the conveying equipment of the load lock 60. The rotating body 31 sequentially moves the empty holding portion 33 to the loading position carried in from the load lock portion 60. The holding unit 33 individually holds the trays 34 carried in by the conveying equipment. In this manner, as shown in FIGS. 2 and 3, all the trays 34 on which the workpieces W to be deposited are mounted are placed on the rotating body 31.

The process of forming a film with respect to the workpiece W introduced into the plasma processing apparatus 100 as described above is performed as follows. In addition, the following operation is an example in which each of the film forming unit 40 and the film processing unit 50 is operated to perform film forming and film processing as in the film forming unit 40A and the film processing unit 50A only. However, the multi-component membrane unit 40 and the membrane processing unit 50 may be operated to increase the processing rate. In addition, an example of film formation and film treatment by the film formation section 40 and the film processing section 50 is a process of forming a silicon oxynitride film. The silicon oxynitride film is formed by attaching silicon to the workpiece W at the atomic level each time, while repeatedly transporting the workpiece W while cyclically transporting the workpiece W to permeate oxygen ions and nitrogen ions.

First, the vacuum chamber 21 is always decompressed by the exhaust unit 23. After the vacuum chamber 21 reaches a predetermined pressure, the rotating body 31 rotates as shown in FIGS. 2 and 3. Thereby, the workpiece W held by the holding section 33 moves along the conveyance path T and passes under the film forming section 40A, the film forming section 40B, the film forming section 40C, the film processing section 50A, and the film processing section 50B. After the rotating body 31 reaches a predetermined rotation speed, the gas supply unit 25 of the film forming unit 40 supplies the sputtering gas G1 to the periphery of the target 41. At this time, the supply unit 53 of the film processing unit 50 also supplies the process gas G2 to the gas space R.

In the film forming unit 40, the power supply unit 6 applies power to each of the target 41A, the target 41B, and the target 41C. By this, the sputtering gas G1 is plasmatized. In the sputtering source 4, active species such as ions generated by plasma collide with the target 41 to eject the particles of the film-forming material. Therefore, on the surface of the workpiece W passing through the film forming section 40, the particles of the film forming material accumulate to form a film each time the passage passes. In the example, a silicon layer is formed.

The power applied by the power supply unit 6 to each of the target 41A, the target 41B, and the target 41C is set in the storage unit 74 so as to increase sequentially from the inner peripheral side to the outer peripheral side of the rotating body 31. The power supply control unit 72 outputs an instruction in accordance with the power set in the storage unit 74 so that the power supply unit 6 controls the power applied to each target 41. In order to perform this control, the amount of film formation per unit time by sputtering increases from the inner peripheral side to the outer peripheral side, but the closer the inner peripheral side to the outer peripheral side, the faster the passing speed of the rotating body 31. As a result, the overall film thickness of the workpiece W becomes uniform.

In addition, even if the workpiece W passes through the film formation unit 40 or the film processing unit 50 that is not in operation, the film formation or film processing is not performed, and therefore it is not heated. In the unheated area, the workpiece W emits heat. In addition, the non-operating film forming unit 40 is, for example, a film forming site M4 and a film forming site M5. In addition, the unprocessed membrane processing unit 50 is, for example, the membrane processing site M3.

On the other hand, the film-formed workpiece W passes through a position in the processing unit 5 that faces the opening Ho of the cylindrical portion H. As shown in FIG. 8, in the processing unit 5, the supply unit 53 supplies oxygen and nitrogen as the process gas G2 into the gas workpiece R via the supply port 512, and applies a high-frequency voltage from the RF power source 55 a to the antenna 55. By applying a high-frequency voltage, an electric field is applied to the gas space R through the window portion 52 to generate plasma. Oxygen ions and nitrogen ions generated by the generated plasma collide with the surface of the film-formed workpiece W, thereby permeating into the film material.

The flow rate per unit time of the process gas G2 introduced from the supply port 512 is set in the storage section 74 so as to decrease toward the inner peripheral side of the rotating body 31 and increase toward the outer peripheral side. The gas control unit 73 outputs an instruction in accordance with the flow rate set in the storage unit 74 so that the regulator 54 controls the flow rate of the process gas G2 flowing through each pipe 53a. Therefore, the amount of active species such as ions per unit volume generated in the gas space R is larger on the outer peripheral side than on the inner peripheral side. Therefore, the amount of membrane treatment affected by the amount of active species increases from the inner peripheral side to the outer peripheral side. However, the treatment area subjected to the membrane treatment is a rounded rectangle having a shape similar to the opening 51a of the cylindrical body 51. Therefore, the width of the processing area, that is, the width in the rotation direction is the same in the radial direction. That is, the processing area has a constant width in the radial direction. On the other hand, the closer the inner peripheral side is to the outer peripheral side, the faster the speed at which the workpiece W passes through the processing area. Therefore, the closer the inner peripheral side is to the outer peripheral side, the shorter the time for the workpiece W to pass through the processing area. By increasing the supply amount of the process gas G2 to the outer peripheral side, the closer to the outer peripheral side, the greater the amount of film processing, so that the short elapsed time in the processing area can be compensated. As a result, the film processing amount of the entire workpiece W becomes uniform.

In addition, in the case of performing the film treatment using two or more process gases G2 like the nitrogen oxidation treatment, it is necessary to form all the films formed by the film forming section 40 into a compound film while the rotating body rotates once It also makes the composition of the film uniform throughout the film-forming surface. This embodiment is suitable for the plasma processing apparatus 100 that performs film processing using two or more process gases G2. For example, a film with a 1:1 ratio of x to y of silicon oxynitride (SiO _x N _y ) is to be formed. In this manner, it is necessary to control both the amount of the active species that the formed film sufficiently becomes the compound film and the ratio of oxygen and nitrogen contained in the active species. In the present embodiment, the supply location of the process gas G2 can be plural, and the supply amount of the process gas G2 in each supply location can be adjusted for each process gas G2, so it is easy to perform both the quantity and the ratio control.

As shown in FIG. 5, the process gas G2 supplied from the supply port 512 collides with the dispersion plate 57 a to horizontally spread along the vertical surface of the dispersion plate 57 a, and flows into the gas space R from the upper edge of the dispersion plate 57 a. As described above, the process gas G2 is dispersed, so there is no case where the flow rate of the process gas G2 only in the vicinity of the supply port 512 is extremely increased. That is, the distribution of the gas flow rate from the inner peripheral side to the outer peripheral side is a gradient increase close to a linear shape that can prevent the occurrence of locally increased locations. With this, it is possible to prevent the film processing rate from locally increasing or decreasing to cause unevenness in the processing.

During the process of forming a film as described above, the rotating body 31 continues to rotate and continuously circulates and conveys the tray 34 on which the work W is mounted. As described above, the workpiece W is circulated to repeatedly perform film formation and film processing, thereby forming a compound film. In this embodiment, a silicon oxynitride film is formed on the surface of the workpiece W as a compound film.

After a predetermined processing time after the silicon oxynitride film has a desired film thickness, the film forming section 40 and the film processing section 50 are stopped. That is, the application of the power to the target 41 by the power supply unit 6, the supply of the process gas G2 from the supply port 512, the application of the voltage by the RF power supply 55 a, etc. are stopped.

As described above, after the film forming process is completed, the tray 34 on which the workpiece W is mounted is sequentially positioned on the load lock 60 by the rotation of the rotating body 31, and is carried out to the outside by the conveying equipment.

[Film Formation Test Results] The film formation test results of Examples and Comparative Examples corresponding to this embodiment will be described with reference to the graph of FIG. 11. Examples 1 to 3 are test results in which the flow rates of oxygen and nitrogen from the plurality of supply ports 512 per unit time are increased stepwise from the inner peripheral side to the outer peripheral side. Embodiment 1 and Embodiment 3 are examples in which the dispersion plate 57a is used, and Embodiment 2 is an example in which gas is directly supplied from the supply port 512 to the gas space without using the dispersion plate 57a.

However, in Examples 2 and 3, the flow rate of the process gas G2 at the supply port 512D and supply port 512d located at the outermost periphery outside the film forming region F is not maximized and is less than the supply port 512B, the supply port 512C, The supply port 512b and the supply port 512c. That is, the flow rate is set so that supply port 512A<supply port 512D<supply port 512B<supply port 512C, supply port 512a<supply port 512d<supply port 512b<supply port 512c.

At a position other than the film forming area F, the workpiece W does not pass, so there is no need to supply the process gas G2. However, as shown in FIG. 7, when the cylindrical body 51 is formed abundantly outside the film forming region F, if the process gas G2 is not supplied to the outside of the film forming region F at all, the inner periphery of the film forming region F Near the end or near the outer peripheral end, the process gas G2 is diffused outside the film forming region F. As a result, the processing rate decreases near the inner peripheral end or near the outer peripheral end of the film forming region F. Therefore, it is preferable that the process gas G2 is also supplied to the outside of the film forming area F in advance. The process gas G2 at this time may be an amount that compensates for the reduction caused by the diffusion, and therefore, it may be an amount that can prevent the diffusion according to the relationship with the size of the region that becomes the margin. However, there may be a need to increase the supply amount more than the supply port 512C and the supply port 512c. As described above, the supply port 512A, the supply port 512a, the supply port 512D, and the supply port 512d located outside the film formation region F can be excluded from the adjustment target of the process gas G2 of the adjustment unit 54 according to the elapsed time.

In addition, in the comparative example, the process gas G2 is supplied from one place. Other conditions are common to Examples 1 to 3 and Comparative Examples. For example, the voltage applied to the target 41 is controlled so that the film thickness of the film formed on the workpiece W by the film forming portion 40 becomes uniform.

Regarding the graph of FIG. 11, the horizontal axis is the distance [mm] in the radial direction from the rotation center of the rotating body 31 toward the outer periphery, and the vertical axis is the refractive index Nf of the film formed. The refractive index of the film changes according to the degree of film treatment, so the degree of film treatment is known by measuring the refractive index. It is clear from the graph that the deviation of the refractive index between the inner and outer peripheral sides of the comparative example is largely ±4.17%. On the other hand, Example 1 is ±1.21%, and Example 2 is ±1.40%. The deviation of Example 3 is the smallest and is ±1.00%.

From the test results, it can be seen that by adjusting the flow rate of the process gas G2 from each supply port 512, it is possible to suppress variations in the film treatment from the inner peripheral side to the outer peripheral side. In addition, it can be seen that by providing the dispersion plate 57a, the degree of the overall film treatment can be made closer to uniform.

Furthermore, it can be seen that the supply port 512D and the supply port 512d located outside the film forming region F have a low degree of participation in the film processing, and it is not necessary to maximize the flow rate of the process gas G2, and even if it is a small amount, the process gas G2 can be supplied. Further, the degree of film treatment is made uniform. This is considered to be the same for the supply port 512A and the supply port 512a on the inner periphery side. That is, by providing the supply port 512 outside the film-forming region F, effects such as equalizing the degree of film processing can also be obtained.

[Functions and effects] (1) The present embodiment includes: a vacuum container 20 in which the interior can be set to a vacuum; a conveying unit 30 provided in the vacuum container 20 and having a rotating body 31 on which the workpiece W is mounted and rotating, by rotating the rotating body 31 rotates and circulates and transports the workpiece W in a circumferential transport path T; the cylindrical portion H extends at an opening 51a at one end toward the transport path T inside the vacuum container 20; the window portion 52 is provided in the cylindrical portion H The gas space R into which the process gas G2 is introduced between the inside of the cylinder H and the rotating body 31 and the outside of the gas space R are divided; the supply part 53 supplies the process gas G2 to the gas space R; and the antenna 55 is arranged Outside the gas space R and in the vicinity of the window portion 52, an inductive coupling plasma is generated in the process gas G2 of the gas space R by applying electric power. The inductive coupling plasma is used for the workpiece W passing through the transport path T Perform plasma treatment. Furthermore, the supply unit 53 supplies the process gas G2 from the surface of the rotating body 31 through a plurality of locations at different times when the plasma treatment process area is processed, and has an adjusting portion 54 which adjusts the time according to the time passing through the treatment area The supply amount of the process gas G2 per unit time of the plurality of parts of the supply unit 53 is individually adjusted.

Therefore, the degree of plasma treatment of the workpiece W circulated and conveyed by the rotating body 31 can be adjusted according to the position at which the passing speed of the surface of the rotating body 31 is different. Therefore, it is possible to perform a desired plasma process such as uniformizing the degree of processing on the workpiece W or changing the degree of processing at a desired position. The larger the diameter of the rotating body 31 and the larger the width of the film formation region F, that is, the greater the difference in the peripheral speed between the inner peripheral side and the outer peripheral side of the film forming region F, the more effective this case is. In addition, in this embodiment, the shape of the opening 51a of the cylindrical body 51 into which the process gas G2 is introduced is set to the same rounded rectangular shape as the antenna 55, so the process gas G2 can be more reliably supplied to the vicinity of the antenna 55 Gas space R, and plasma can be obtained with high efficiency.

(2) In addition, the present embodiment includes: a plurality of supply ports 512 provided corresponding to the plurality of locations where the supply portion 53 supplies the process gas G2, and supplies the process gas G2 to the gas space R; and the dispersion plate 57a and the supply port The 512 is spaced apart and arranged at a position facing the supply port 512, and the process gas G2 supplied from the supply port 512 is dispersed and flows into the gas space R.

Therefore, the process gas G2 is dispersed by the dispersing plate 57a, so that there is no local concentration of the gas flow, and it is possible to prevent the deviation of the process. In addition, the dispersion plate 57a can prevent hollow cathode discharge from occurring at the supply port 512. For example, in a state where there is no dispersion plate 57a and the supply port 512 is exposed to the gas space R, there may be a possibility that a hollow cathode discharge occurs at the supply port 512. If a hollow cathode discharge occurs, it will interfere with the plasma caused by the inductive coupling to form a uniform plasma. In this embodiment, the dispersion plate 57a and the supply port 512 are spaced apart and arranged at a position facing the supply port 512, thereby preventing the occurrence of hollow cathode discharge between the dispersion plate 57a and the supply port 512. Furthermore, the process gas G2 is introduced into the gas space R near the window 52 from the supply port 512 via the dispersion plate 57a. Therefore, the process gas G2 can be more reliably supplied to the gas space R near the antenna 55, and the plasma can be efficiently obtained.

(3) The flow path of the process gas G2 between the dispersion plate 57a and the supply port 512 is closed on the rotating body 31 side, and communicates with the gas space R on the window portion 52 side.

Therefore, in the vicinity of the window portion 52 where an electric field is generated, the process gas G2 is supplied along the lower surface of the window portion 52, so that a dense plasma is formed, and the processing efficiency is improved. Furthermore, since the flow path of the process gas G2 between the dispersion plate 57a and the supply port 512 is closed on the side of the rotating body 31, the process gas G2 stays on the lower side of the flow path. The dispersing plate 57a is cooled by the cooling part 56 via the process gas G2 retained. If the dispersion plate 57a is cooled as described above, the plasma deactivation can be suppressed, so that the plasma can be efficiently generated. By cooling the upper surface of the dispersing portion 57 in contact with the bottom surface of the cooling portion 56, this effect is further improved.

(4) The adjustment unit 54 adjusts the supply amount of the process gas G2 introduced from each supply port 512 according to the position in the direction crossing the conveyance path T of the rotating body 31.

Therefore, the supply amount of the process gas G2 of the plurality of supply ports 512 can be individually adjusted according to the positions where the passing speeds of the surface of the rotating body 31 are different.

(5) It has a film forming part 40 provided at a position opposed to the workpiece W circulated and transported on the transport path T, and deposits a film forming material on the workpiece W by sputtering to form a film The film of the film-forming material deposited on the workpiece W by the film-forming portion 40 is subjected to film processing using inductively coupled plasma.

Therefore, the degree of film processing on the formed film can also be adjusted according to the position where the passing speed of the surface of the rotating body 31 is different.

(6) The supply port 512 corresponds to the film formation area of the film formation section 40 and is provided in the film formation area F, which is an annular area along the transport path T, and is also provided outside the film formation area F and is provided in the film formation The supply port 512 outside the region F is excluded from the adjustment target of the supply amount of the process gas G2 of the adjustment unit 54.

As described above, the process gas G2 is supplied even outside the film formation region F, whereby the flow rate of the process gas G2 at the end of the film formation region F can be prevented from being insufficient. For example, even if the supply port 512 at the outermost periphery or the supply port 512 at the innermost periphery is outside the film forming region F, the process gas G2 is supplied, whereby the uniformity of the film processing can be achieved. However, even if the maximum flow rate is not set outside the outermost film forming region F, the flow rate in the film forming region F will not be insufficient, so the flow rate can be saved. That is, the supply location of the process gas G2 outside the film formation area F functions as an auxiliary supply location and an auxiliary supply port that compensate for the flow rate of the process gas G2 in the film formation area F.

(7) The supply port 512 is arranged at a position facing the space through the gas space in the direction along the transport path T. Therefore, the process gas G2 can be spread in the gas space in a short time.

(8) The adjustment section 54 adjusts the supply amount of the process gas introduced from each supply port 512 according to the film thickness formed on the workpiece W and the time when the rotating body 31 passes through the processing area. Therefore, a film treatment suitable for the film thickness can be performed.

(9) Since the piping 53b and the piping 53c are connected to the cylindrical body 51 and the process gas G2 is ejected from the cylindrical body 51, it is easy to remove the cylindrical portion H from the plasma processing apparatus 100. That is, the tube portion H can be removed in a state where the piping 53b and the piping 53c are connected to the cylindrical body 51. For example, when the piping 53b and the piping 53c are introduced into the vacuum chamber 21 from the side of the vacuum container 20 and connected to the cylindrical body 51, it is not necessary to remove the cylindrical portion H from the plasma processing apparatus 100 The operation of releasing the connection between the piping 53b, the piping 53c and the cylindrical body 51 is performed. In addition, when attaching the cylindrical portion H to the plasma processing apparatus 100, it is necessary to connect the piping 53b and the piping 53c to the cylindrical body 51 again, so the work becomes cumbersome. Alternatively, when the piping 53b and the piping 53c are introduced into the vacuum chamber 21 from the side of the vacuum container 20, it is also considered to provide a cutout for avoiding the piping 53b and the piping 53c in the cylindrical portion H. In this case, it is easy to remove the cylindrical portion H from the plasma processing apparatus 100, but most of the process gas G2 dispersed by the dispersion plate 57a leaks from the cut portion. Therefore, the process gas G2 cannot be introduced into the gas space R near the antenna 55, so the plasma cannot be efficiently obtained. In addition, there is a possibility that the leaked process gas G2 flows into the film forming portion 40 and is mixed with the sputtering gas G1. When the process gas G2 and the sputtering gas G1 are mixed, there is a possibility that the film forming rate of the film forming portion 40 decreases. If the film forming rate of the film forming section 40 is reduced, not only the productivity is lowered, but also the optimal supply amount determined in advance is not optimal, so there is a concern that the uniformity of the film quality may be deteriorated. On the other hand, regarding the cylindrical portion H of the present embodiment, the interval in the vertical direction between the bottom surface of the dispersing portion 57 and the surface of the rotating body 31 is narrowed to a length that allows the workpiece W to pass through. Therefore, the process gas G2 can be suppressed from leaking from the gas space R. In addition, even if there is very little leakage, the partition portion 44 can suppress the inflow into the film forming portion 40.

(10) On the premise of specific conditions, the supply amount of process gas G2 from a plurality of locations can be obtained by calculation. Therefore, the control device 70 may have a supply amount calculation unit that calculates the supply amount of the process gas G2. The supply amount calculation unit calculates the supply amount of the process gas G2 based on, for example, the conditions input by the input device 77 or the conditions stored in the storage unit 74. The calculated supply amount is set in the storage unit 74. Based on the set supply amount, the adjustment unit 54 adjusts the supply amount of the process gas G2 supplied from each supply port 512. Hereinafter, more specific examples will be described.

(Configuration) The basic configuration of the plasma processing apparatus 100 is the same as the above-described embodiment. The control device 70 includes a supply amount calculation unit, and the storage unit 74 determines the innermost or outermost film thickness, the optimal supply amount for the film thickness, and the distance of each supply port 512 from the rotation center of the rotating body 31 (through each The radius of the circle at the center of the supply port 512 is maintained.

(Calculation processing) When a uniform film thickness and a uniform film quality are to be formed in a large area, the following four conditions must be considered when adjusting the supply amount of the process gas G2. [1] The thickness of the film formed by the film-forming portion during one rotation of the rotating body [2] The film thickness distribution of the film formed in the radial direction of the rotating body [3] The inner and outer circumferences of the rotating body Speed difference [4] The width of the plasma generating area (the width of the processing area)

Here, the condition of [2] can be removed from the conditions as long as the target 41A, the target 41B, and the target 41C of the film forming section 40 are individually applied with electric power to form a uniform film thickness. In addition, as in the above-described embodiment, by setting the antenna 55 and the gas space R to have a rectangular shape with rounded corners when viewed in the plane direction, the width of the processing region becomes from the innermost periphery to the outermost periphery of the film forming region F the same. Therefore, the same plasma density can be formed within the range of the width, so the condition of [4] can also be removed from the condition.

Therefore, the supply amount of each supply port 512 can be determined according to the conditions of [1] and [3]. That is, as the condition of [1], either the innermost or outermost film thickness of the film forming region F and the optimal supply amount suitable for the film thickness are determined by a preliminary test or the like. Moreover, the speed difference between the inner and outer peripheries of [3] and the radius of the inner and outer peripheries are related (proportional). Therefore, according to the radial position (distance from the center of rotation) of the plurality of supply ports 512 and the The film thickness and the optimal supply amount determine the respective supply amounts of the plurality of supply ports 512. In addition, the film thickness of the film formed during the rotation of the rotating body 31 at the innermost periphery of the film forming region F, and the film thickness of the film formed during the rotation of the rotating body 31 at the outermost periphery of the film forming region F The optimal supply amount suitable for the film thickness and the radial position of each supply port 512 are included in the information stored in the storage unit 74.

For example, let the optimal supply amount of the innermost peripheral supply port 512 with a predetermined film thickness of the film formed by the film forming section 40 be a, set the innermost radius to Lin, and set the outermost radius to Let it be Lou, and let the optimal supply amount of the outermost supply port 512 be A. First, the case where the optimal supply amount a of the supply port 512 of the innermost periphery is known will be described. The supply amount calculation unit acquires the optimal supply amount a of the innermost circumference, the radius Lin of the circle passing the innermost supply port 512, and the radius Lou of the circle passing the outermost supply port 512 from the storage unit 74, and is based on the following formula To find the optimal supply amount A at the outermost periphery. A=a×Lou/Lin Similarly, the optimal supply amount of the other supply port 512 can also be obtained from the ratio of the radii. That is, when the optimal supply amount of the supply port 512 is Ax and the radius of the circle passing through the supply port 512 is Px, the optimal supply amount Ax can be obtained based on the following formula. Ax=a×Px/Lin On the contrary, when the optimal supply amount A of the outermost supply port 512 is known, it can be obtained based on the following formula from the radius px of the circle passing through the supply port 512 The optimal supply amount ax of each supply port 512. ax=A×px/Lou

[Effects] As described above, as long as [1] knows the film thickness of the film formed by the film forming section 40 during one rotation of the rotating body, the supply amount from the plurality of supply ports 512 can be automatically determined. Therefore, as the assumed mode of the supply amount from each supply port 512, the amount of data held by the storage unit 74 can be reduced compared to the case of holding multiple types of data. For example, in the case of a film whose refractive index changes according to the composition like SiON, the supply amount of each supply port 512 is automatically determined according to the film thickness of the innermost periphery or the outermost periphery of the film-forming region F, so just adjust N With a mixing ratio of ₂ and O ₂ , a film with a desired refractive index can be obtained.

[Other Embodiments] The present invention is not limited to the above-mentioned embodiments, and includes the following embodiments. (1) As for the film-forming material, various materials that can be formed by sputtering can be applied. For example, tantalum, titanium, aluminum, etc. can be applied. As for the material used to form the compound, various materials can also be used.

(2) The number of targets in the film forming section is not limited to three. The target material may be set to one, two or more than four. By increasing the number of targets and adjusting the applied power, finer film thickness control can be performed. In addition, the film forming portion may be one, two, or four or more. The number of film forming parts can be increased to increase the film forming rate. According to this, the number of membrane processing sections can also be increased to increase the membrane processing rate.

(3) It is not necessary to form the film forming part, and it may not have the film forming part. That is, the present invention is not limited to a plasma processing apparatus that performs membrane processing, and can be applied to a plasma processing apparatus that processes an object to be processed using an active species generated by plasma. For example, it may be configured as a plasma processing apparatus in which a plasma is generated in a gas space in a processing unit to perform surface modification such as etching, ashing, and cleaning. In this case, for example, an inert gas such as argon gas may be used as the process gas.

(4) The supply port of the process gas may not be provided in the cylindrical body. For example, each pipe in the supply unit may be extended in the cylindrical body, and the front end of each pipe may be used as the supply port. The diameter may be reduced and the tip of the piping may be shaped like a nozzle. In this case, not only the film formation area but also the piping is arranged outside the film formation area, so that it can also function as an auxiliary supply port and an auxiliary nozzle that compensate for the flow rate of the process gas in the film formation area.

(5) The number of locations where the process gas is supplied by the supply unit and the number of supply ports may be a plurality of locations where the passing speed of the surface of the rotating body is different, and is not limited to the number exemplified in the above embodiment. By arranging three or more in a row in the film formation area, finer flow control corresponding to the processing position can be performed. In addition, the greater the number of supply locations and supply ports, the closer the gas flow distribution is to a linear shape, thereby preventing deviations in local processing. The supply ports may not be two rows facing the cylindrical body, but may be any row. In addition, even if the supply ports are not arranged on a straight line, they can be arranged at positions staggered in the height direction.

(6) The configuration of the adjustment unit is not limited to the above example. It may be an embodiment in which a manual valve is provided in each pipe and adjustment is performed manually. As long as the supply amount of gas can be adjusted, the pressure is set to be constant, which can be adjusted by the switch of the valve, so that the pressure can be raised and lowered. The adjustment section can also be realized by the supply port. For example, the supply amount of the process gas may be adjusted by providing supply ports of different diameters according to the positions where the passing speed of the surface of the rotating body is different. The supply port can also be replaced with nozzles with different diameters. In addition, the diameter of the supply port may be changed by a shutter or the like.

(7) The speed is the distance moved per unit time. Therefore, the supply amount of the process gas from each supply port can be set according to the relationship with the time required to pass through the processing area in the radial direction.

(8) The shapes of the cylindrical body, the window portion, and the antenna are not limited to the shapes exemplified in the above embodiment. The horizontal section can also be square, round or oval. However, regarding the shape where the interval between the inner peripheral side and the outer peripheral side is equal, since the elapsed time of the workpiece W on the inner peripheral side and the outer peripheral side is different, it is easy to adjust the supply amount of the process gas corresponding to the processing time difference. In addition, in the case where the interval between the inner peripheral side and the outer peripheral side is equal, a space is formed between the partition 44 divided into the film 40 and the film processing unit 50, for example. Therefore, the effect of preventing the process gas G2 such as oxygen or nitrogen from flowing into the film forming portion 40 is improved. Furthermore, for example, the antenna may be formed in a fan shape or the like to make the processing area fan-shaped. In this case, the closer to the outer peripheral side, the faster the speed. Even so, the time required to pass through the processing area is the same or substantially the same, so the supply amount of process gas can also be the same.

(9) The number of pallets and workpieces to be simultaneously transported by the transport section and the number of holding sections that hold them may be at least one, and is not limited to the number exemplified in the above embodiment. That is, it may be an embodiment in which one workpiece is circulated and transported, or an embodiment in which two or more workpieces are circulated and transported. It may also be an embodiment in which two or more workpieces are arranged in a radial direction and circulated and transported.

(10) In the above embodiment, the rotating body is the rotating platform, but the rotating body is not limited to the shape of the platform. It may be a rotating body that rotates while holding a pallet or a workpiece on an arm that extends radially from the center of rotation. The film forming portion and the film processing portion may be located on the bottom surface side of the vacuum container, and the vertical relationship between the film forming portion and the film processing portion and the rotating body is opposite. In this case, the surface of the rotating body on which the holding portion is arranged becomes a lower surface, which is a surface facing downward when the rotating body is in the horizontal direction.

(11) The embodiments of the present invention and the modified examples of each part have been described above. However, the above-described embodiments or modified examples of each part are presented as examples, and are not intended to limit the scope of the invention. The novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope or gist of the invention and included in the invention described in the claims.

100‧‧‧Plasma processing device 20‧‧‧Vacuum container 20a‧‧‧Top plate 20b‧‧‧‧Inner bottom surface 20c 22‧‧‧Exhaust port 23‧‧‧Exhaust part 24‧‧‧Inlet port 25‧‧‧Gas supply part 30‧‧‧Transport part 31‧‧‧Rotary body 32‧‧‧‧Motor 33‧‧‧ Holding part 34‧‧‧Tray 40, 40A, 40B, 40C‧‧‧ film-forming part 4‧‧‧Sputter source 41, 41A, 41B, 41C‧‧‧ target 42‧‧‧ back plate 43‧‧‧ electrode 44‧ ‧‧Division part 5‧‧‧Process unit 50, 50A, 50B ‧‧‧ Membrane processing part 51 ‧‧‧Cylinder 51a ‧‧‧ Opening 51b ‧‧‧Outer flange 511 , 511c‧‧‧sheds 512, 512A～512D, 512a～512d‧‧‧‧supply port 52‧‧‧ window part 53‧‧‧supply part 53a, 53b, 53c ‧‧MFC 55‧‧‧‧Antenna 55a‧‧‧Radio frequency (RF) power 55b‧‧‧Matching box 551, 551a～551d ‧‧‧Conductor 552 ‧‧‧Dispersion part 57a‧‧‧Dispersion board 6‧‧‧Power part 60‧‧‧Load lock part 70‧‧‧Control device 71‧‧‧Instrument control part 72‧‧‧Power control part 73‧‧‧ Gas control Part 74‧‧‧ Storage part 75‧‧‧Setting part 76‧‧‧ Input and output control part 77‧‧‧ Input device 78‧‧‧‧ Output device E‧‧‧Exhaust T‧‧‧Transport path M1, M3‧‧ ‧Film processing site M2, M4, M5 ‧‧‧ Film forming site G‧‧‧Reaction gas G1‧‧‧Sputtering gas G2‧‧‧Process gas H‧‧‧Barrel Ho‧‧‧Opening F‧‧‧ Membrane area R‧‧‧gas space W‧‧‧workpiece A‧‧‧part AA, BB‧‧‧hatching

FIG. 1 is a perspective perspective view of a plasma processing apparatus of an embodiment. 2 is a perspective plan view of the plasma processing apparatus of the embodiment. Fig. 3 is a cross-sectional view taken along line A-A of Fig. 2. Fig. 4 is a sectional view taken along line B-B of Fig. 2. FIG. 5 is an enlarged view showing details of the part A in FIG. 4. 6 is an exploded perspective view showing the processing unit of the embodiment. 7 is a perspective plan view showing the processing unit of the embodiment. 8 is a schematic diagram showing a flow path of process gas. 9 is a perspective view showing an antenna of the embodiment. 10 is a block diagram showing the configuration of the control device of the embodiment. 11 is a graph showing test results of comparative examples and examples.

20‧‧‧Vacuum container

20a‧‧‧Top plate

20b‧‧‧Inner bottom

20c‧‧‧Inner peripheral surface

21‧‧‧Vacuum chamber

21a‧‧‧ opening

22‧‧‧Exhaust

23‧‧‧Exhaust Department

24‧‧‧Inlet

25‧‧‧Gas Supply Department

31‧‧‧rotating body

32‧‧‧Motor

33‧‧‧Maintaining Department

34‧‧‧Tray

40‧‧‧Film-forming Department

4‧‧‧Sputtering source

41A, 41B, 41C‧‧‧ target material

42‧‧‧Backboard

43‧‧‧electrode

44‧‧‧ Division

5‧‧‧Processing unit

50‧‧‧Membrane Processing Department

51‧‧‧Cylinder

52‧‧‧Window

53‧‧‧Supply Department

53b‧‧‧Piping

55‧‧‧ Antenna

55a‧‧‧radio frequency (RF) power supply

55b‧‧‧ matching box

56‧‧‧Cooling Department

57‧‧‧Decentralized Department

57a‧‧‧Dispersion board

6‧‧‧Power Department

E‧‧‧Exhaust

G1‧‧‧Sputtering gas

G2‧‧‧Process gas

Ho‧‧‧Open

W‧‧‧Workpiece

Claims (8)

A plasma processing apparatus, characterized in that it includes: a vacuum container, which can be set to a vacuum; a conveying section, which is provided in the vacuum container, has a rotating body on which a workpiece is mounted and rotates, and is caused by rotating the rotating body The workpiece is circulated and conveyed in a circular conveying path; the cylindrical portion extends in the direction of the conveying path inside the vacuum container at one end; the window portion is provided in the cylindrical portion to place the cylindrical A gas space into which the process gas is introduced and an outside of the gas space between the inside of the portion and the rotating body are divided; the supply portion supplies the process gas to the gas space; and the antenna is disposed at the Outside the gas space and in the vicinity of the window, an inductive coupling plasma is generated in the process gas of the gas space by applying electric power, and the inductive coupling plasma is used to treat the workpiece passing through the conveying path Plasma treatment is performed; and the supply section supplies the process gas from a plurality of supply ports corresponding to a plurality of locations at different times from the surface of the rotating body passing through the treatment area where the plasma treatment is performed, and has An adjustment unit that individually adjusts the supply amount of process gas per unit time of the plurality of parts of the supply unit according to the elapsed time of the respective supply of the plurality of supply ports. The plasma processing apparatus according to item 1 of the patent application range, wherein the plurality of supply ports are provided corresponding to the plurality of locations where the supply unit supplies the process gas; and the dispersing plates are arranged at intervals with At a position facing the supply port, the process gas supplied from the supply port is dispersed and flows into the gas space. The plasma processing apparatus according to item 2 of the patent application range, wherein the flow path of the process gas between the dispersion plate and the supply port is closed on the side of the rotating body and in the window The side communicates with the gas space. The plasma processing apparatus according to any one of claims 1 to 3, wherein the regulator adjusts the process gas introduced from each supply port according to the position in the direction crossing the conveying path The supply volume is adjusted. The plasma processing apparatus according to item 1 of the patent application scope, which includes a film forming portion provided at a position opposed to the workpiece circulated and transported on the transport path by sputtering Then, a film-forming material is deposited on the workpiece to form a film, and the film of the film-forming material deposited on the workpiece by the film-forming portion is subjected to a film treatment using the inductive coupling plasma. The plasma processing apparatus according to item 5 of the patent application range, wherein the supply port corresponds to a film forming area of the film forming portion and is provided in an annular film forming area along the conveying path, and Also set outside the film formation area, The supply port provided outside the film formation area is excluded from the adjustment target of the supply amount of the process gas of the adjustment section. The plasma processing apparatus according to claim 5 or 6, wherein the supply port is disposed at a position facing the gas space in the direction along the conveyance path. The plasma processing apparatus according to item 5 or 6 of the patent application range, wherein the adjustment section controls the process gas supplied from each supply port according to the film thickness formed on the workpiece and the elapsed time Supply volume is adjusted.

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