TWI692539B - Sputtering target and its packaging method - Google Patents

Sputtering target and its packaging method Download PDF

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TWI692539B
TWI692539B TW108108464A TW108108464A TWI692539B TW I692539 B TWI692539 B TW I692539B TW 108108464 A TW108108464 A TW 108108464A TW 108108464 A TW108108464 A TW 108108464A TW I692539 B TWI692539 B TW I692539B
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sputtering target
cylindrical
backing tube
protective cover
target according
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TW201938830A (en
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館野諭
鶴田好孝
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日商Jx金屬股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65BMACHINES, APPARATUS OR DEVICES FOR, OR METHODS OF, PACKAGING ARTICLES OR MATERIALS; UNPACKING
    • B65B11/00Wrapping, e.g. partially or wholly enclosing, articles or quantities of material, in strips, sheets or blanks, of flexible material
    • B65B11/02Wrapping articles or quantities of material, without changing their position during the wrapping operation, e.g. in moulds with hinged folders
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65BMACHINES, APPARATUS OR DEVICES FOR, OR METHODS OF, PACKAGING ARTICLES OR MATERIALS; UNPACKING
    • B65B31/00Packaging articles or materials under special atmospheric or gaseous conditions; Adding propellants to aerosol containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491Manufacturing of targets

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dispersion Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Packages (AREA)

Abstract

本發明提供一種抑制圓筒型背襯管的端部損傷的濺射靶。該濺射靶具有:圓筒型濺射靶材(110);圓筒型背襯管(120),通過接合材料與圓筒型濺射靶材(110)的內側接合,且該圓筒型背襯管的在中心軸(C)方向上的長度比圓筒型濺射靶材(110)的在中心軸(C)方向上的長度長;以及保護蓋(130),覆蓋圓筒型背襯管(120)的在中心軸(C)方向上的至少一端部(121);保護蓋(130)含有合成樹脂。The present invention provides a sputtering target that suppresses damage to the end of a cylindrical backing tube. The sputtering target has: a cylindrical sputtering target (110); a cylindrical backing tube (120) that is joined to the inside of the cylindrical sputtering target (110) by a bonding material, and the cylindrical type The length of the backing tube in the direction of the central axis (C) is longer than the length of the cylindrical sputtering target (110) in the direction of the central axis (C); and the protective cover (130) covering the cylindrical back At least one end (121) of the liner (120) in the direction of the central axis (C); the protective cover (130) contains synthetic resin.

Description

濺射靶及其包裝方法Sputtering target and its packaging method

本發明係與一種濺射靶及其包裝方法有關。The invention relates to a sputtering target and its packaging method.

近年來,平板顯示器(FPD:Flat Panel Display)的製造技術和太陽能電池的製造技術迅速發展,大型的薄型電視機和太陽能電池的市場正在變大。另外,隨著這些市場的發展,為了降低產品的製造成本,玻璃基板正逐步大型化。目前,正在開發被稱為第八代的2200mm×2400mm尺寸用的裝置。In recent years, the manufacturing technology of flat panel displays (FPD: Flat Panel Display) and the manufacturing technology of solar cells have developed rapidly, and the market for large thin TVs and solar cells is becoming larger. In addition, with the development of these markets, in order to reduce the manufacturing cost of products, glass substrates are gradually becoming larger. Currently, a device for the 2200mm×2400mm size called the eighth generation is being developed.

尤其,在大型的玻璃基板上形成金屬薄膜或氧化金屬薄膜的濺射裝置中,使用平板型濺射靶或圓筒型(也稱為回轉型或旋轉型)濺射靶。圓筒型濺射靶與平板型濺射靶相比,具有靶的使用效率高,產生腐蝕的情況少,因沉積物的剝離而產生顆粒的情況少的優點。這樣,在薄膜成膜的用途中圓筒型濺射靶非常有用。In particular, in a sputtering apparatus in which a metal thin film or a metal oxide thin film is formed on a large-sized glass substrate, a flat-plate type sputtering target or a cylindrical type (also referred to as a rotary type or rotary type) sputtering target is used. Compared with a flat type sputtering target, a cylindrical type sputtering target has advantages of high efficiency of use of the target, less occurrence of corrosion, and less generation of particles due to peeling of the deposit. In this way, the cylindrical sputtering target is very useful in the application of thin film formation.

因此,隨著交通和運輸工具的發展,不僅向國內運出上述圓筒型濺射靶,向海外運出的情況也在增加。因此,希望一種考慮到運輸距離、運輸工具以及環境等,不損傷圓筒型濺射靶產品的方法。Therefore, with the development of transportation and means of transportation, the above-mentioned cylindrical sputtering targets are not only shipped domestically but also overseas. Therefore, a method that does not damage the cylindrical sputtering target product in consideration of the transportation distance, transportation means, environment, etc. is desired.

例如,專利文獻1中公開了一種圓筒形濺射靶,具有:圓筒型的燒結體;圓筒型的基材,通過接合材料與所述燒結體的內側接合;保護構件(保護膜),覆蓋所述基材的兩端的開口部,將填充有氣體的所述基材的中空部密封。For example, Patent Document 1 discloses a cylindrical sputtering target having: a cylindrical sintered body; a cylindrical base material that is bonded to the inside of the sintered body by a bonding material; and a protective member (protective film) , Covering the openings at both ends of the base material, and sealing the hollow portion of the base material filled with gas.

現有技術文獻Existing technical literature

專利文獻Patent Literature

專利文獻1:日本特開2017-179464號公報Patent Literature 1: Japanese Patent Application Publication No. 2017-179464

發明要解決的問題Problems to be solved by the invention

圓筒形濺射靶所具有的基材的兩端部在內周面側設置有密封面,使得能夠導入用於冷卻濺射中產生的熱的冷卻用的水。因此,在圓筒形濺射靶的運輸過程中,需要避免損傷該密封面。另外,還需要抑制基材的兩端部的變形。因此,特別希望保護基材的端部。Both ends of the base material included in the cylindrical sputtering target are provided with sealing surfaces on the inner peripheral surface side so that cooling water for cooling the heat generated in sputtering can be introduced. Therefore, during the transportation of the cylindrical sputtering target, it is necessary to avoid damaging the sealing surface. In addition, it is also necessary to suppress deformation of both ends of the base material. Therefore, it is particularly desirable to protect the end of the substrate.

例如,在專利文獻1中公開的圓筒形濺射靶中,由於來自外部的灰塵或水分不會附著在靶表面,因而能夠抑制濺射期間產生打弧(arcing)。然而,該專利文獻1沒有提及保護基材的端部免受機械衝擊。因此,由於運輸時產生的機械衝擊,可能會使基材的兩端部分與包裝箱的內壁接觸從而在密封面上產生損傷,或者使基材的端部變形。當將該圓筒形濺射靶用於濺射裝置時,會產生冷卻水在濺射期間洩漏或者無法設置於濺射裝置的問題。這樣,用於保護基材(圓筒型背襯管)的端部的方式仍有改進的餘地。For example, in the cylindrical sputtering target disclosed in Patent Document 1, since dust or moisture from the outside does not adhere to the target surface, it is possible to suppress arcing during sputtering. However, this Patent Document 1 does not mention protecting the end of the base material from mechanical impact. Therefore, due to the mechanical impact generated during transportation, both end portions of the base material may contact the inner wall of the packaging box to cause damage to the sealing surface, or deform the end portion of the base material. When the cylindrical sputtering target is used in a sputtering device, there is a problem that cooling water leaks during sputtering or cannot be installed in the sputtering device. In this way, the method for protecting the end of the base material (cylindrical backing tube) still has room for improvement.

因此,本發明是鑒於上述情況而做出的,其課題在於,提供一種能夠抑制圓筒型背襯管的端部損傷的濺射靶及其包裝方法。Therefore, the present invention has been made in view of the above circumstances, and its object is to provide a sputtering target capable of suppressing damage to the end of a cylindrical backing tube and a packaging method thereof.

用於解決問題的手段Means for solving problems

即,在一方面,本發明提供一種濺射靶,具有:圓筒型濺射靶材;圓筒型背襯管,通過接合材料與所述圓筒型濺射靶材的內側接合,且所述圓筒型背襯管的在中心軸方向上的長度比該圓筒型濺射靶材的在中心軸方向上的長度長;以及保護蓋,覆蓋所述圓筒型背襯管的在中心軸方向上的至少一端部;所述保護蓋含有合成樹脂。That is, in one aspect, the present invention provides a sputtering target having: a cylindrical sputtering target; a cylindrical backing tube that is bonded to the inside of the cylindrical sputtering target by a bonding material, and The length of the cylindrical backing tube in the direction of the central axis is longer than the length of the cylindrical sputtering target in the direction of the central axis; and a protective cover covering the center of the cylindrical backing tube At least one end in the axial direction; the protective cover contains synthetic resin.

在本發明的濺射靶的一實施方式中,所述保護蓋覆蓋所述圓筒型背襯管的在中心軸方向上的兩端部。In one embodiment of the sputtering target of the present invention, the protective cover covers both ends of the cylindrical backing tube in the direction of the central axis.

在本發明的濺射靶的一實施方式中,所述保護蓋的在軸向上的一端部沿圓周方向形成凹狀的缺口部,所述圓筒型背襯管的在中心軸方向上的至少一端部插入所述缺口部。In one embodiment of the sputtering target of the present invention, one end of the protective cover in the axial direction forms a concave notch in the circumferential direction, and at least at least one of the cylindrical backing tubes in the direction of the central axis One end is inserted into the notch.

在本發明的濺射靶的一實施方式中,所述缺口部的外側內周面與所述圓筒型背襯管的在中心軸方向上的端部的外周面之間的間隙為0.1mm以上且小於1.0mm。In one embodiment of the sputtering target of the present invention, the gap between the outer inner circumferential surface of the notch and the outer circumferential surface of the end of the cylindrical backing tube in the direction of the central axis is 0.1 mm Above and less than 1.0mm.

在本發明的濺射靶的一實施方式中,所述缺口部與所述圓筒型背襯管的端部的端面、外周面以及內周面抵接。In one embodiment of the sputtering target of the present invention, the notch portion abuts the end surface, the outer peripheral surface, and the inner peripheral surface of the end of the cylindrical backing tube.

在本發明的濺射靶的一實施方式中,所述保護蓋還覆蓋所述圓筒型濺射靶材的在中心軸方向上的端部。In one embodiment of the sputtering target of the present invention, the protective cover further covers the end of the cylindrical sputtering target in the direction of the central axis.

在本發明的濺射靶的一實施方式中,所述合成樹脂是從由矽橡膠、維通橡膠、氟橡膠、丁基橡膠、丙烯酸橡膠、乙丙橡膠、氨基甲酸乙酯橡膠、聚酯類彈性體、聚烯烴類彈性體、氟類彈性體、矽類彈性體、丁二烯類彈性體、聚醯胺類彈性體、聚苯乙烯類彈性體、氨基甲酸乙酯類彈性體、聚氨酯樹脂、柔性環氧樹脂、氟樹脂、聚碳酸酯、聚丙烯、聚乙烯、聚對苯二甲酸乙二醇酯以及聚萘二甲酸乙二醇酯所構成的組中選擇的至少一種。In one embodiment of the sputtering target of the present invention, the synthetic resin is selected from silicone rubber, Viton rubber, fluororubber, butyl rubber, acrylic rubber, ethylene propylene rubber, urethane rubber, polyesters Elastomers, polyolefin elastomers, fluorine elastomers, silicon elastomers, butadiene elastomers, polyamide elastomers, polystyrene elastomers, urethane elastomers, polyurethane resins , Flexible epoxy resin, fluororesin, polycarbonate, polypropylene, polyethylene, polyethylene terephthalate, and polyethylene naphthalate.

在本發明的濺射靶的一實施方式中,所述合成樹脂為聚四氟乙烯。In one embodiment of the sputtering target of the present invention, the synthetic resin is polytetrafluoroethylene.

在本發明的濺射靶的一實施方式中,所述保護蓋的壁厚為2.0mm以上。In one embodiment of the sputtering target of the present invention, the wall thickness of the protective cover is 2.0 mm or more.

在本發明的濺射靶的一實施方式中,所述保護蓋的壁厚為5.0mm以下。In one embodiment of the sputtering target of the present invention, the wall thickness of the protective cover is 5.0 mm or less.

在本發明的濺射靶的一實施方式中,所述保護蓋的楊氏模量為2000MPa以下。In one embodiment of the sputtering target of the present invention, the protective cover has a Young's modulus of 2000 MPa or less.

在本發明的濺射靶的一實施方式中,所述圓筒型濺射靶材包含從由ITO、ZnO、IZO以及IGZO所構成的組中選擇的一種作為主要成分。In one embodiment of the sputtering target of the present invention, the cylindrical sputtering target contains one selected from the group consisting of ITO, ZnO, IZO, and IGZO as a main component.

在本發明的濺射靶的一實施方式中,多個所述圓筒型濺射靶材以同軸方式排列。In one embodiment of the sputtering target of the present invention, a plurality of the cylindrical sputtering targets are arranged coaxially.

另外,在另一方面,本發明提供一種濺射靶的包裝方法,用於包裝上述的濺射靶,包括:將所述圓筒型背襯管的中空部的內部調節成非活性氣體環境或真空環境的工序;以及以覆蓋所述圓筒型背襯管的兩端的開口部並密封所述中空部的內部的方式形成保護膜的工序。In addition, in another aspect, the present invention provides a sputtering target packaging method for packaging the above sputtering target, including: adjusting the inside of the hollow portion of the cylindrical backing tube to an inert gas environment or A step of a vacuum environment; and a step of forming a protective film so as to cover the openings at both ends of the cylindrical backing tube and seal the inside of the hollow portion.

在本發明的濺射靶的包裝方法的一實施方式中,所述中空部的內部的所述非活性氣體的壓力為30kP至60kPa。In one embodiment of the sputtering target packaging method of the present invention, the pressure of the inert gas inside the hollow portion is 30 kP to 60 kPa.

在本發明的濺射靶的包裝方法的一實施方式中,所述非活性氣體為氬氣或氮氣。In one embodiment of the method for packaging a sputtering target of the present invention, the inert gas is argon or nitrogen.

在本發明的濺射靶的包裝方法的一實施方式中,所述中空部的內部的所述非活性氣體的露點溫度為-80℃至-50℃。In one embodiment of the method for packaging a sputtering target of the present invention, the inert gas inside the hollow portion has a dew point temperature of -80°C to -50°C.

發明的效果Effect of invention

根據本發明的一實施方式,能夠抑制圓筒型背襯管的端部的損傷。According to an embodiment of the present invention, damage to the end of the cylindrical backing tube can be suppressed.

以下,本發明不限定於各實施方式,能夠在不脫離其宗旨的範圍內將構成要素變形而具體化。另外,能夠通過將各實施方式中所公開的多個構成要素適當組合,來形成各種發明。例如,也可以從實施方式中所示的所有構成要素中刪除一些構成要素。進而,也可以適當地組合不同的實施方式的構成要素。此外,本發明的濺射靶是指帶有保護蓋的濺射靶。本發明的發明人進行了潛心研究,發現通過具有用於覆蓋圓筒型背襯管的在中心軸方向上的至少一端部的保護蓋,並使保護膜含有合成樹脂,能夠抑制圓筒型背襯管的端部的損傷。In the following, the present invention is not limited to each embodiment, and the constituent elements can be modified and embodied without departing from the gist thereof. In addition, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiments. For example, some constituent elements may be deleted from all the constituent elements shown in the embodiment. Furthermore, the components of different embodiments may be combined as appropriate. In addition, the sputtering target of the present invention refers to a sputtering target with a protective cover. The inventors of the present invention conducted intensive studies and found that by having a protective cover for covering at least one end portion of the cylindrical backing tube in the direction of the central axis and making the protective film contain a synthetic resin, the cylindrical back can be suppressed Damage to the end of the liner.

以下,例示本發明的濺射靶的一實施方式。Hereinafter, an embodiment of the sputtering target of the present invention will be exemplified.

[1. 濺射靶][1. Sputtering target]

使用附圖說明本發明的濺射靶的一實施方式。圖1A是用於說明本發明的濺射靶的一實施方式的概略剖視圖。圖1B是用於說明圖1A所示的保護蓋及其周圍的放大圖。圖1C是用於說明圖1A所示的保護蓋的放大圖。圖2是圖1A的X-X剖視圖。圖3是表示作為本發明的濺射靶的一實施方式的保護蓋的一實施例的概略剖視圖。圖4是表示作為本發明的濺射靶的一實施方式的保護蓋的另一實施例的概略剖視圖。圖5是表示作為本發明的濺射靶的一實施方式的保護蓋的另一實施例的概略剖視圖。圖6是用於說明本發明的濺射靶的另一實施方式的概略剖視圖。圖7是表示作為本發明的濺射靶的一實施方式的保護蓋的另一實施例的概略剖視圖。An embodiment of the sputtering target of the present invention will be described using the drawings. FIG. 1A is a schematic cross-sectional view for explaining an embodiment of the sputtering target of the present invention. FIG. 1B is an enlarged view for explaining the protective cover shown in FIG. 1A and its surroundings. FIG. 1C is an enlarged view for explaining the protective cover shown in FIG. 1A. FIG. 2 is a cross-sectional view taken along X-X in FIG. 1A. 3 is a schematic cross-sectional view showing an example of a protective cover as an embodiment of the sputtering target of the present invention. 4 is a schematic cross-sectional view showing another example of a protective cover as an embodiment of the sputtering target of the present invention. FIG. 5 is a schematic cross-sectional view showing another example of the protective cover as an embodiment of the sputtering target of the present invention. 6 is a schematic cross-sectional view for explaining another embodiment of the sputtering target of the present invention. 7 is a schematic cross-sectional view showing another example of a protective cover as an embodiment of the sputtering target of the present invention.

如圖1A所示,該濺射靶100具有:圓筒型濺射靶材110;圓筒型背襯管120,通過接合材料與圓筒型濺射靶材110的內側接合,該圓筒型背襯管的在中心軸C方向上的長度比圓筒型濺射靶材110的在中心軸C方向上的長度長;以及保護蓋130,覆蓋圓筒型背襯管120的在中心軸C方向上的兩端部121。並且,保護蓋130含有合成樹脂。由此,不會損傷背襯管120的端部121附近的內周面121a的密封面,並能夠抑制該端部121的變形。As shown in FIG. 1A, the sputtering target 100 includes a cylindrical sputtering target 110 and a cylindrical backing tube 120 that is joined to the inside of the cylindrical sputtering target 110 by a bonding material. The length of the backing tube in the direction of the central axis C is longer than the length of the cylindrical sputtering target 110 in the direction of the central axis C; and the protective cover 130 covers the central axis C of the cylindrical backing tube 120 The two ends 121 in the direction. In addition, the protective cover 130 contains synthetic resin. Thereby, the sealing surface of the inner peripheral surface 121 a near the end 121 of the backing tube 120 is not damaged, and the deformation of the end 121 can be suppressed.

(圓筒型濺射靶材)(Cylindrical sputtering target)

圓筒型濺射靶材110被設置為包圍圓筒型背襯管120的外周面120b。優選圓筒型濺射靶材110被設置為與圓筒型背襯管120的中心軸C同軸或大致同軸。通過這樣的結構,當將該濺射靶100安裝於濺射裝置,以圓筒型背襯管120為中心旋轉時,能夠將圓筒型濺射靶材110的表面與被成膜面(樣品基板)之間的間隔保持恒定。The cylindrical sputtering target 110 is provided so as to surround the outer peripheral surface 120 b of the cylindrical backing tube 120. Preferably, the cylindrical sputtering target 110 is provided coaxially or substantially coaxially with the central axis C of the cylindrical backing tube 120. With such a configuration, when the sputtering target 100 is mounted on a sputtering device and rotated around the cylindrical backing tube 120, the surface of the cylindrical sputtering target 110 and the film-forming surface (sample The interval between substrates) remains constant.

圓筒型濺射靶材110被成型為中空的圓筒形狀。圓筒型濺射靶材110的相對密度優選為99.0%以上,更優選為99.7%以上。此外,在本發明中,相對密度通過阿基米德法算出。另外,從抑制濺射中的異常放電的觀點出發,優選圓筒型濺射靶材110的平均表面粗糙度(Ra)小於0.5μm。The cylindrical sputtering target 110 is formed into a hollow cylindrical shape. The relative density of the cylindrical sputtering target 110 is preferably 99.0% or more, and more preferably 99.7% or more. In addition, in the present invention, the relative density is calculated by the Archimedes method. In addition, from the viewpoint of suppressing abnormal discharge during sputtering, it is preferable that the average surface roughness (Ra) of the cylindrical sputtering target 110 is less than 0.5 μm.

進而,作為圓筒型濺射靶材110的材質,只要能夠濺射成膜即可,沒有特別限定,例如可列舉出金屬氧化物、金屬氮化物、金屬氧氮化物的燒結體等。作為金屬氧化物,可以使用屬於氧化銦、氧化錫、氧化鋅、氧化鎵等典型元素的金屬的氧化物。Furthermore, the material of the cylindrical sputtering target 110 is not particularly limited as long as it can be sputter-formed, and examples thereof include metal oxides, metal nitrides, and metal oxynitride sintered bodies. As the metal oxide, oxides of metals belonging to typical elements such as indium oxide, tin oxide, zinc oxide, and gallium oxide can be used.

具體而言,可以將從氧化錫和氧化銦的化合物(Indium Tin Oxide:ITO)、氧化鋅(Zinc Oxide:ZnO)、氧化銦和氧化鋅的化合物(Indium Zinc Oxide:IZO)、氧化銦、氧化鋅及氧化鎵的化合物(Indium Gallium Zinc Oxide:IGZO)中選出的化合物等用作圓筒型濺射靶材110。Specifically, a compound of tin oxide and indium oxide (Indium Tin Oxide: ITO), zinc oxide (Zinc Oxide: ZnO), a compound of indium oxide and zinc oxide (Indium Zinc Oxide: IZO), indium oxide, oxide A compound selected from a compound of zinc and gallium oxide (Indium Gallium Zinc Oxide: IGZO) is used as the cylindrical sputtering target 110.

(圓筒型背襯管)(Cylindrical backing pipe)

圓筒型背襯管120形成內周面120a側為中空結構的中空部V1,圓筒型背襯管120例如具有沿著圓筒型濺射靶材110的內周面110a的外表面形狀。圓筒型背襯管120的外徑略小於圓筒型濺射靶材110的內徑,當將圓筒型背襯管120及圓筒型濺射靶材110以同軸方式重疊時,調整成使圓筒型背襯管120與圓筒型濺射靶材110之間能夠形成間隙。在該間隙中設置接合材料。The cylindrical backing tube 120 forms a hollow portion V1 having a hollow structure on the side of the inner peripheral surface 120a. The cylindrical backing tube 120 has an outer surface shape along the inner peripheral surface 110a of the cylindrical sputtering target 110, for example. The outer diameter of the cylindrical backing tube 120 is slightly smaller than the inner diameter of the cylindrical sputtering target 110. When the cylindrical backing tube 120 and the cylindrical sputtering target 110 are coaxially superimposed, it is adjusted to A gap can be formed between the cylindrical backing tube 120 and the cylindrical sputtering target 110. The bonding material is provided in this gap.

圓筒型背襯管120優選為與接合材料的潤濕性良好且與接合材料之間具有高接合強度的金屬。例如,作為構成圓筒型背襯管120的材料,優選使用銅(Cu)或鈦(Ti),或者,銅合金、鈦合金或不銹鋼(SUS)。作為銅合金,可以使用鉻銅等以銅(Cu)為主要成分的合金。另外,如果使用鈦(Ti)作為圓筒型背襯管120,則能夠獲得輕量且有剛性的圓筒型背襯管120。The cylindrical backing tube 120 is preferably a metal that has good wettability with the bonding material and has high bonding strength with the bonding material. For example, as a material constituting the cylindrical backing tube 120, copper (Cu) or titanium (Ti), or copper alloy, titanium alloy, or stainless steel (SUS) is preferably used. As the copper alloy, an alloy containing copper (Cu) as a main component such as chromium copper can be used. In addition, if titanium (Ti) is used as the cylindrical backing tube 120, a lightweight and rigid cylindrical backing tube 120 can be obtained.

(保護蓋)(protection cap)

如圖1B和圖1C所示,保護蓋130為圓柱狀,形成內側內周面133b側為中空結構的中空部V2,且沿著圓周方向形成凹狀的缺口部131。在該保護蓋130的該缺口部131插入圓筒型背襯管120的端部121。由此,保護圓筒型背襯管120的端部121不變形或保護圓筒型背襯管120的端部121的內周面121a的密封面。優選該缺口部131與圓筒型背襯管120的端部121的端面121b、外周面121c以及內周面121a抵接。由此,保護蓋130不會因運輸時產生的振動而從圓筒型背襯管120的端部121脫離。因此,即使將該濺射靶100收納到包裝箱中,圓筒型背襯管120的端部121也不會直接撞擊包裝箱的內壁,能夠抑制其損傷或摩擦。另外,保護蓋130的隆起面131b與圓筒型濺射靶材110的端部111的端面111a抵接。由此,能夠抑制圓筒型濺射靶材110的端部111的損傷。As shown in FIGS. 1B and 1C, the protective cover 130 has a cylindrical shape, forms a hollow portion V2 having a hollow structure on the inner inner peripheral surface 133 b side, and has a concave notch portion 131 along the circumferential direction. The end 121 of the cylindrical backing tube 120 is inserted into the notch 131 of the protective cover 130. This protects the end 121 of the cylindrical backing tube 120 from deformation or protects the sealing surface of the inner circumferential surface 121 a of the end 121 of the cylindrical backing tube 120. The notch 131 preferably contacts the end surface 121 b, the outer peripheral surface 121 c, and the inner peripheral surface 121 a of the end 121 of the cylindrical backing tube 120. Thus, the protective cover 130 is not detached from the end 121 of the cylindrical backing tube 120 due to vibration generated during transportation. Therefore, even if the sputtering target 100 is stored in the packaging box, the end 121 of the cylindrical backing tube 120 does not directly hit the inner wall of the packaging box, and damage or friction can be suppressed. In addition, the raised surface 131 b of the protective cover 130 is in contact with the end surface 111 a of the end 111 of the cylindrical sputtering target 110. Thus, damage to the end 111 of the cylindrical sputtering target 110 can be suppressed.

從確保保護蓋130的強度的觀點出發,保護蓋130的壁厚D1至D3優選分別為2.0mm以上,更優選為2.5mm以上,進一步優選為3.0mm以上。另外,考慮將該濺射靶100進行包裝,優選分別為5.0mm以下,更優選為4.5mm以下,進一步優選為4.0mm以下。在此,如圖2所示,D1是指保護蓋130的在從保護蓋130的中心軸C向徑向外側延伸的線Lv上從外側外周面132a到外側內周面132b之間的距離,D2是指保護蓋130的從保護蓋130的內側外周面133a到內側內周面133b之間的距離。另外,如圖1B所示,D3是指保護蓋130的與中心軸C平行的從凹面131a到端面134之間的距離。From the viewpoint of ensuring the strength of the protective cover 130, the wall thicknesses D1 to D3 of the protective cover 130 are preferably 2.0 mm or more, more preferably 2.5 mm or more, and still more preferably 3.0 mm or more. In addition, considering the packaging of the sputtering target 100, each is preferably 5.0 mm or less, more preferably 4.5 mm or less, and still more preferably 4.0 mm or less. Here, as shown in FIG. 2, D1 refers to the distance between the outer peripheral surface 132 a and the outer inner peripheral surface 132 b of the protective cover 130 on a line Lv extending radially outward from the central axis C of the protective cover 130, D2 refers to the distance between the inner outer peripheral surface 133a of the protective cover 130 and the inner inner peripheral surface 133b of the protective cover 130. In addition, as shown in FIG. 1B, D3 refers to the distance from the concave surface 131 a to the end surface 134 of the protective cover 130 parallel to the central axis C.

如圖3所示,優選保護蓋130在缺口部131的外側內周面132b與圓筒型背襯管120的在中心軸C方向上的端部121的外周面121c之間設置間隙W。從容易從圓筒型背襯管120的端部121卸下保護蓋130的觀點出發,間隙W優選為0.1mm以上,更優選為0.25mm以上,進一步優選為0.3mm以上。但是,考慮到不使保護蓋130因運輸該濺射靶100時產生的振動而脫落,間隙W優選為小於1.0mm,更優選為0.8mm以下,進一步優選為0.5mm以下。在此,W是指保護蓋130的在從保護蓋130的中心軸C向徑向外側延伸的線上從保護蓋130的外側內周面132b到圓筒型背襯管120的端部121的外周面121c之間的距離。此外,從保護背襯管120的密封面的觀點出發,缺口部131的內側外周面133a與背襯管120的在中心軸C方向上的端部121的內周面121a抵接。As shown in FIG. 3, it is preferable that the protective cover 130 is provided with a gap W between the outer inner peripheral surface 132 b of the notch 131 and the outer peripheral surface 121 c of the end 121 of the cylindrical backing tube 120 in the direction of the central axis C. From the viewpoint of easy removal of the protective cover 130 from the end 121 of the cylindrical backing tube 120, the gap W is preferably 0.1 mm or more, more preferably 0.25 mm or more, and still more preferably 0.3 mm or more. However, considering that the protective cover 130 does not come off due to vibration generated when transporting the sputtering target 100, the gap W is preferably less than 1.0 mm, more preferably 0.8 mm or less, and still more preferably 0.5 mm or less. Here, W refers to the outer circumference of the protective cap 130 extending from the central axis C of the protective cap 130 to the radially outer side from the outer inner peripheral surface 132b of the protective cap 130 to the end 121 of the cylindrical backing tube 120 The distance between the faces 121c. In addition, from the viewpoint of protecting the sealing surface of the backing tube 120, the inner peripheral surface 133 a of the notch 131 abuts the inner peripheral surface 121 a of the end 121 of the backing tube 120 in the direction of the central axis C.

另外,如圖4所示,優選保護蓋130部分地覆蓋圓筒型背襯管120的端部121。即,圓筒型濺射靶材110的端部111的端面111a與保護蓋130的隆起面131b隔開距離L。從保護圓筒型背襯管120的端部121的觀點出發,距離L優選為5.0mm以下。In addition, as shown in FIG. 4, it is preferable that the protective cover 130 partially covers the end 121 of the cylindrical backing tube 120. That is, the end surface 111 a of the end 111 of the cylindrical sputtering target 110 is separated from the raised surface 131 b of the protective cover 130 by a distance L. From the viewpoint of protecting the end 121 of the cylindrical backing tube 120, the distance L is preferably 5.0 mm or less.

如圖5及圖6所示,優選保護蓋130進一步覆蓋圓筒型濺射靶材110的在中心軸C方向上的端部111。在圖5中,在保護蓋130的缺口部131形成有階梯面131b1,該階梯面131b1與圓筒型濺射靶材110的端面111a抵接。該保護蓋130沿著圓筒型濺射靶材110的端部111的內周面111b及外周面111c平行於中心軸C延伸。此時,優選地,在保護蓋130中,保護蓋130的與中心軸C平行的從隆起面131b到與階梯面131b1相同的位置之間的距離d1為20mm以下。由此,不僅能夠更切實地防止圓筒型背襯管120的端部121的損傷和變形而且能夠更切實地防止圓筒型濺射靶材110的端部111的損傷和變形。另外,在該保護蓋130中,為了減輕機械衝擊,在從中心軸C向徑向外側延伸的線上從圓筒型濺射靶材110的端部111的外周面111c到保護蓋130的外側外周面132a之間的距離d2優選為3mm以上。進而,如圖6所示,當將保護蓋130覆蓋到圓筒型背襯管120的端部121上時,具有在從圓筒型背襯管120的端部121的外周面121c到保護蓋130的外側內周面132b之間形成的中空部V3。因此,從不使保護蓋130因運輸該濺射靶100時產生的振動而脫離的觀點出發,優選保護蓋130沿著圓筒型背襯管120的內周面120a的一部分延伸。As shown in FIGS. 5 and 6, it is preferable that the protective cover 130 further covers the end 111 of the cylindrical sputtering target 110 in the direction of the central axis C. In FIG. 5, a stepped surface 131 b 1 is formed in the notch portion 131 of the protective cover 130, and this stepped surface 131 b 1 abuts on the end surface 111 a of the cylindrical sputtering target 110. The protective cover 130 extends parallel to the central axis C along the inner peripheral surface 111 b and the outer peripheral surface 111 c of the end portion 111 of the cylindrical sputtering target 110. At this time, preferably, in the protective cover 130, the distance d1 between the raised surface 131b and the same position as the stepped surface 131b1 of the protective cover 130 parallel to the central axis C is 20 mm or less. Thereby, not only the damage and deformation of the end 121 of the cylindrical backing tube 120 but also the damage and deformation of the end 111 of the cylindrical sputtering target 110 can be prevented more reliably. In addition, in this protective cover 130, in order to reduce the mechanical impact, from the outer circumferential surface 111c of the end 111 of the cylindrical sputtering target 110 to the outer periphery of the protective cover 130 on a line extending radially outward from the central axis C The distance d2 between the surfaces 132a is preferably 3 mm or more. Furthermore, as shown in FIG. 6, when the protective cover 130 is covered on the end 121 of the cylindrical backing tube 120, the protective cover 130 extends from the outer circumferential surface 121 c of the end 121 of the cylindrical backing tube 120 to the protective cover The hollow portion V3 formed between the outer inner peripheral surfaces 132b of 130. Therefore, it is preferable that the protective cover 130 extends along a part of the inner peripheral surface 120 a of the cylindrical backing tube 120 from the viewpoint of not detaching the protective cover 130 due to vibration generated when transporting the sputtering target 100.

另外,如圖7所示,保護蓋130為圓柱狀,且形成有用於覆蓋背襯管120的端部121的凹狀的缺口部131。該保護蓋130沒有形成中空部,因此將圓筒型背襯管120的中空部V1密封。在這樣的情況下,考慮到在包裝該濺射靶100時的真空排氣,優選在保護蓋130的中心部在中心軸C方向上形成通孔H(例如,φ5mm以下)。在包裝濺射靶100時,該通孔H構成氣體流路,其將圓筒型背襯管120的中空部V1中的氣體排出,或者從外部向中空部V1供給氣體。In addition, as shown in FIG. 7, the protective cover 130 has a cylindrical shape, and a concave cutout 131 for covering the end 121 of the backing tube 120 is formed. Since the protective cap 130 does not form a hollow portion, the hollow portion V1 of the cylindrical backing tube 120 is sealed. In such a case, in consideration of vacuum exhaust when packaging the sputtering target 100, it is preferable to form a through hole H (for example, φ5 mm or less) in the central axis C direction at the central portion of the protective cover 130. When the sputtering target 100 is packaged, the through hole H constitutes a gas flow path that discharges the gas in the hollow portion V1 of the cylindrical backing tube 120 or supplies the gas to the hollow portion V1 from the outside.

作為保護蓋130的材質,含有耐受外部衝擊的合成樹脂,例如,可列舉矽橡膠、維通橡膠(Viton rubber)、氟橡膠、丁基橡膠、丙烯酸橡膠、乙丙橡膠、氨基甲酸乙酯橡膠、聚酯類彈性體、聚烯烴類彈性體、氟類彈性體、矽類彈性體、丁二烯類彈性體(butadiene elastomer)、聚醯胺類彈性體、聚苯乙烯類彈性體、氨基甲酸乙酯類彈性體、聚氨酯樹脂、柔性環氧樹脂、氟樹脂、聚碳酸酯、聚丙烯、聚乙烯、聚對苯二甲酸乙二醇酯以及聚萘二甲酸乙二醇酯。這些中的一種可以單獨使用,也可以組合兩種以上使用。其中,作為保護蓋130的材質,由於聚四氟乙烯的化學性穩定且耐熱性優異,所以優選聚四氟乙烯。The material of the protective cover 130 contains a synthetic resin that is resistant to external impact, and examples thereof include silicone rubber, Viton rubber, fluororubber, butyl rubber, acrylic rubber, ethylene propylene rubber, and urethane rubber. , Polyester elastomer, polyolefin elastomer, fluorine elastomer, silicon elastomer, butadiene elastomer, polyamide elastomer, polystyrene elastomer, urethane Ethyl elastomer, polyurethane resin, flexible epoxy resin, fluororesin, polycarbonate, polypropylene, polyethylene, polyethylene terephthalate and polyethylene naphthalate. One of these may be used alone, or two or more kinds may be used in combination. Among them, as the material of the protective cover 130, polytetrafluoroethylene is preferably chemically stable and excellent in heat resistance, so polytetrafluoroethylene is preferable.

從緩和外部衝擊的觀點出發,保護蓋130的楊氏模量優選為2500MPa以下,更優選為2000MPa以下,進一步優選為1600MPa以下。此外,在本發明中,保護蓋130的楊氏模量根據JIS K7127:1999測量。From the viewpoint of alleviating external impact, the Young's modulus of the protective cover 130 is preferably 2500 MPa or less, more preferably 2000 MPa or less, and still more preferably 1600 MPa or less. In addition, in the present invention, the Young's modulus of the protective cover 130 is measured according to JIS K7127:1999.

(接合材料)(Joint material)

接合材料設置在圓筒型背襯管120與圓筒型濺射靶材110之間。接合材料形成為它們之間的接合層140。優選接合材料將圓筒型背襯管120和圓筒型濺射靶材110接合,並且具有良好的耐熱性和導熱性。另外,由於在濺射期間被置於真空下,因此優選具有在真空中氣體放出少的特性。The bonding material is provided between the cylindrical backing tube 120 and the cylindrical sputtering target 110. The bonding material is formed as the bonding layer 140 between them. It is preferable that the joining material joins the cylindrical backing tube 120 and the cylindrical sputtering target 110 and has good heat resistance and thermal conductivity. In addition, since it is placed under vacuum during sputtering, it is preferable to have a characteristic of less gas evolution in vacuum.

進而,從製造方面的觀點出發,優選接合材料在將圓筒型背襯管120和圓筒型濺射靶材110接合時具有流動性。為了滿足這些特性,作為接合材料,能夠使用熔點為300℃以下的低熔點金屬材料。例如,作為接合材料,可以使用銦(In)、錫(Sn)等金屬或者含有它們中的任一種元素的金屬合金材料。具體而言,可以使用銦或錫的單質、銦和錫的合金、以錫為主要成分的焊料合金等。Furthermore, from the viewpoint of manufacturing, it is preferable that the joining material has fluidity when joining the cylindrical backing tube 120 and the cylindrical sputtering target 110. In order to satisfy these characteristics, as the bonding material, a low-melting metal material having a melting point of 300° C. or lower can be used. For example, as the bonding material, a metal such as indium (In), tin (Sn), or a metal alloy material containing any of these elements can be used. Specifically, a simple substance of indium or tin, an alloy of indium and tin, a solder alloy mainly composed of tin, or the like can be used.

例如,如圖8所示,在濺射靶200中,多個圓筒型濺射靶材210同軸地排列,並通過接合材料與圓筒型背襯管120接合。並且,圓筒型背襯管120的兩端部121被保護蓋130覆蓋。此外,通過在相鄰的圓筒型濺射靶材210之間的空間215設置緩衝材料等片構件,能夠抑制圓筒型濺射靶材210的端部211因運輸等產生的機械衝擊而損傷或變形。For example, as shown in FIG. 8, in the sputtering target 200, a plurality of cylindrical sputtering targets 210 are arranged coaxially, and are joined to the cylindrical backing tube 120 by a joining material. In addition, both end portions 121 of the cylindrical backing tube 120 are covered by the protective cover 130. In addition, by providing a sheet member such as a buffer material in the space 215 between the adjacent cylindrical sputtering targets 210, it is possible to suppress the end 211 of the cylindrical sputtering target 210 from being damaged by mechanical impact caused by transportation or the like Or deformed.

[2. 濺射靶的製造方法][2. Manufacturing method of sputtering target]

接著,使用附圖說明本發明的濺射靶的製造方法的一實施方式。圖9是表示本發明的濺射靶的製造方法的一實施方式的概略內容的流程圖。Next, an embodiment of the method for manufacturing a sputtering target of the present invention will be described using the drawings. 9 is a flowchart showing an outline of an embodiment of a method of manufacturing a sputtering target of the present invention.

在本發明的濺射靶的製造方法的一實施方式中,表示了將氧化銦錫(ITO)燒結體作為燒結體的例子,但是燒結體的材料不限定於ITO,也可以使用ZnO、IZO、IGZO等其它氧化金屬化合物。In one embodiment of the method for manufacturing a sputtering target of the present invention, an example in which an indium tin oxide (ITO) sintered body is used as a sintered body is shown, but the material of the sintered body is not limited to ITO, and ZnO, IZO, IGZO and other metal oxide compounds.

首先,準備構成燒結體的原材料。在本實施方式中,準備氧化銦的粉末和氧化錫的粉末(S11、S12)。這些原料的純度通常可以為2N(99品質%)以上,優選為3N(99.9品質%)以上,進一步優選為4N(99.99品質%)以上。如果純度低於2N,則燒結體中含有較多雜質,因此會產生不能獲得所期望的物性(例如,形成的薄膜的透過率減少、電阻值增加、伴隨打弧而產生顆粒)的問題。First, the raw materials constituting the sintered body are prepared. In this embodiment, indium oxide powder and tin oxide powder are prepared (S11, S12). The purity of these raw materials may generally be 2N (99 mass%) or more, preferably 3N (99.9 mass%) or more, and more preferably 4N (99.99 mass%) or more. If the purity is lower than 2N, the sintered body contains a lot of impurities, so that the desired physical properties (for example, the transmittance of the formed thin film is decreased, the resistance value is increased, and particles are generated due to arcing) are generated.

接著,將這些原材料的粉末粉碎並混合(S13)。原材料的粉末的粉碎混合處理可以使用利用氧化鋯、礬土、尼龍樹脂等球或珠(所謂的介質)的幹式法,或者使用利用所述球或珠的介質攪拌式研磨機、無介質的容器旋轉式研磨機、機械攪拌式研磨機、氣流式研磨機等的濕式法。在此,一般來說,濕式法在粉碎及混合能力方面優於幹式法,因此優選使用濕式法進行混合。Next, the powders of these raw materials are pulverized and mixed (S13). For the pulverization and mixing treatment of the raw material powder, a dry method using balls or beads (so-called media) such as zirconia, alumina, nylon resin, etc., or a media agitating mill using the balls or beads, medium-free Wet method of container rotary grinder, mechanical stirring grinder, airflow grinder, etc. Here, in general, the wet method is superior to the dry method in terms of pulverization and mixing ability, so it is preferable to use the wet method for mixing.

對於原材料的組成沒有特別限制,但是優選根據目標燒結體的組成比適當調整。The composition of the raw material is not particularly limited, but it is preferably adjusted appropriately according to the composition ratio of the target sintered body.

接著,將原材料的粉末的漿料乾燥並造粒(S13)。此時,也可以使用快速乾燥造粒對漿料進行快速乾燥。快速乾燥造粒可以通過使用噴霧乾燥機調整熱風的溫度或風量來進行。Next, the slurry of the raw material powder is dried and granulated (S13). At this time, the slurry may be quickly dried using quick drying granulation. Quick drying granulation can be performed by adjusting the temperature or air volume of hot air using a spray dryer.

接著,對通過上述的混合及造粒而得的混合物(在設置了臨時燒制的情況下,被臨時燒制而成的混合物)加壓成型從而形成圓筒型的成型體(S14)。通過該工序,成型為適合目標燒結體的形狀。作為成型處理,例如,可列舉出模具成型、澆注成型、注塑成型等,但是為了獲得圓筒型那樣的複雜的形狀,優選通過冷等靜壓法(Cold Isostatic Pressing:CIP)等進行成型。通過CIP進行成型的壓力優選為100MPa以上且200MPa以下。通過像上述那樣調整成型的壓力,能夠形成具有54.5%以上的相對密度的成型體。通過使成型體的相對密度在上述範圍內,能夠使通過後續燒結而得的燒結體的相對密度為99.7%以上。Next, the mixture obtained by the above mixing and granulation (the mixture temporarily fired when provisionally fired is provided) is pressure-molded to form a cylindrical shaped body (S14). Through this process, the shape is shaped to fit the target sintered body. Examples of the molding process include mold molding, injection molding, and injection molding. However, in order to obtain a complicated shape like a cylindrical shape, molding by cold isostatic pressing (CIP) or the like is preferred. The pressure for molding by CIP is preferably 100 MPa or more and 200 MPa or less. By adjusting the molding pressure as described above, a molded body having a relative density of 54.5% or more can be formed. By making the relative density of the molded body within the above range, the relative density of the sintered body obtained by the subsequent sintering can be 99.7% or more.

接著,對通過成型工序而得的圓筒型的成型體進行燒結(S15)。燒結中使用電爐。燒結條件能夠根據燒結體的組成來適當選擇。例如在含有10品質%的SnO2的ITO的情況下,可以通過在氧氣氣體環境中將其在1400℃以上且1600℃以下的溫度下放置10小時以上且30小時以下來進行燒結。當燒結溫度低於下限時,燒結體的相對密度會降低。另一方面,如果超過1600℃,對電爐和爐材的損傷大並且需要頻繁地維護,因此作業效率顯著降低。另外,當燒結時間短于下限時,燒結體的相對密度會降低。另外,燒結時的壓力可以是大氣壓,或者也可以是加壓環境。Next, the cylindrical molded body obtained by the molding step is sintered (S15). An electric furnace is used for sintering. The sintering conditions can be appropriately selected according to the composition of the sintered body. For example, in the case of ITO containing 10% by mass of SnO 2, it can be sintered by leaving it at a temperature of 1400° C. or more and 1600° C. or less for 10 hours or more and 30 hours or less in an oxygen gas atmosphere. When the sintering temperature is lower than the lower limit, the relative density of the sintered body will decrease. On the other hand, if it exceeds 1600°C, damage to the electric furnace and furnace materials is large and frequent maintenance is required, so the work efficiency is significantly reduced. In addition, when the sintering time is shorter than the lower limit, the relative density of the sintered body may decrease. In addition, the pressure during sintering may be atmospheric pressure or a pressurized environment.

接著,將形成的圓筒型的燒結體,通過平面磨床、圓筒磨床、車床、切割機、加工中心(machining center)等的機械加工機,機械加工成圓筒型的所期望的形狀(S16)。這裡進行的機械加工是加工圓筒型的燒結體以使其具有所期望的形狀、表面粗糙度的工序,最後經過該工序形成圓筒型濺射靶材110。Next, the formed cylindrical sintered body is machined into a desired shape of a cylindrical shape by a mechanical processing machine such as a surface grinder, a cylindrical grinder, a lathe, a cutting machine, a machining center (S16) ). The mechanical processing performed here is a step of processing a cylindrical sintered body to have a desired shape and surface roughness, and finally, through this step, a cylindrical sputtering target 110 is formed.

接著,將機械加工後的圓筒型濺射靶材110在純水中進行超聲波清洗處理,從而除去附著在圓筒型濺射靶材110的表面的機械加工的研磨碎屑。接著,通過接合材料將圓筒型濺射靶材110與圓筒型背襯管120接合(bonding)(S17)。例如,在使用銦作為接合材料時,在圓筒型濺射靶材110與圓筒型背襯管120之間的間隙中注入熔化的銦。這樣,能夠獲得圓筒型濺射靶100。Next, the mechanically processed cylindrical sputtering target 110 is subjected to ultrasonic cleaning treatment in pure water to remove the machined abrasive debris adhering to the surface of the cylindrical sputtering target 110. Next, the cylindrical sputtering target 110 and the cylindrical backing tube 120 are bonded by a bonding material (S17). For example, when indium is used as a bonding material, molten indium is injected into the gap between the cylindrical sputtering target 110 and the cylindrical backing tube 120. In this way, the cylindrical sputtering target 100 can be obtained.

接著,在圓筒型濺射靶100所具有的圓筒型背襯管120的在中心軸C方向上的至少一端部121覆蓋保護蓋130(S18)。保護蓋130的成型方法沒有特別限定,但是可列舉出注塑成型(包括嵌件成型、中空成型、多色成型等)、吹塑成型、壓縮成型以及擠壓成型等。Next, at least one end 121 of the cylindrical backing tube 120 included in the cylindrical sputtering target 100 in the direction of the central axis C covers the protective cover 130 (S18). The molding method of the protective cover 130 is not particularly limited, but examples include injection molding (including insert molding, hollow molding, multi-color molding, etc.), blow molding, compression molding, and extrusion molding.

這樣,能夠獲得帶有保護蓋的圓筒型濺射靶100。In this way, a cylindrical sputtering target 100 with a protective cover can be obtained.

[3. 濺射靶的包裝方法][3. Packaging method of sputtering target]

接著,利用附圖說明本發明的濺射靶的包裝方法的一實施方式。圖10是表示本發明的濺射靶的包裝方法的一實施方式的概略內容的流程圖。圖11是表示通過本發明的濺射靶的包裝方法的一實施方式包裝的濺射靶的概略剖視圖。Next, one embodiment of the sputtering target packaging method of the present invention will be described with reference to the drawings. FIG. 10 is a flowchart showing an outline of an embodiment of the sputtering target packaging method of the present invention. 11 is a schematic cross-sectional view showing a sputtering target packaged by an embodiment of the sputtering target packaging method of the present invention.

如圖10所示,本發明的濺射靶的包裝方法的一實施方式包括:工序S21,將圓筒型背襯管120的中空部V1的內部調節為非活性氣體環境或者真空環境;以及工序S22,以覆蓋圓筒型背襯管120的兩端部121的開口部並將背襯管120的中空部V1的內部密封的方式形成保護膜150。As shown in FIG. 10, one embodiment of the sputtering target packaging method of the present invention includes the step S21 of adjusting the inside of the hollow portion V1 of the cylindrical backing tube 120 to an inert gas atmosphere or a vacuum environment; and a step In S22, the protective film 150 is formed so as to cover the openings of both ends 121 of the cylindrical backing tube 120 and seal the inside of the hollow portion V1 of the backing tube 120.

(非活性環境)(Inactive environment)

為了將圓筒型背襯管120的中空部V1中存在的氣體替換成所期望的氣體,排出中空部V1的氣體,並向排氣後的中空部V1導入非活性氣體。然後,將導入到中空部V1的非活性氣體排出之後,將上述氣體填充到中空部V1中。此外,可以多次重複地進行中空部V1的氣體的排出及非活性氣體的導入。由此,能夠使填充於中空部V1的氣體的純度接近供給的氣體的純度。其結果,能夠向空間中填充灰塵及水分少的優質氣體。然後,如圖11所示,在填充有氣體的狀態下通過保護膜150包裝濺射靶100。In order to replace the gas present in the hollow portion V1 of the cylindrical backing tube 120 with a desired gas, the gas in the hollow portion V1 is exhausted, and an inert gas is introduced into the exhausted hollow portion V1. Then, after the inert gas introduced into the hollow portion V1 is discharged, the hollow portion V1 is filled with the above gas. In addition, the exhaust of the gas in the hollow portion V1 and the introduction of the inert gas may be repeated multiple times. Thereby, the purity of the gas filled in the hollow portion V1 can be made close to the purity of the supplied gas. As a result, the space can be filled with high-quality gas with little dust and moisture. Then, as shown in FIG. 11, the sputtering target 100 is packaged with the protective film 150 in a state filled with gas.

作為填充在中空部V1中的氣體,例如可使用氬氣(Ar)或氮氣(N2)。考慮到中空部V1的壓力與外部大氣壓之差,填充在中空部V1中的氣體的壓力優選為30kPa以上,更優選為40kPa以上。另外,考慮到空氣輸送等運輸過程中氣體的體積膨脹,氣體的壓力優選為60kPa以下,更優選為50kPa以下。As the gas filled in the hollow portion V1, for example, argon gas (Ar) or nitrogen gas (N2) can be used. In consideration of the difference between the pressure of the hollow portion V1 and the external atmospheric pressure, the pressure of the gas filled in the hollow portion V1 is preferably 30 kPa or more, and more preferably 40 kPa or more. In addition, considering the volume expansion of the gas during transportation such as air transportation, the pressure of the gas is preferably 60 kPa or less, and more preferably 50 kPa or less.

另外,優選中空部V1的水分量少。也就是說,從抑制因保存環境而保護膜150的內側結露的觀點出發,填充在中空部V1中的氣體的露點溫度優選為-80℃至-50℃。通過這樣做,在保護膜150的內側不會結露,並且在使用該濺射靶100時,能夠在不引起打弧等的情況下成膜。In addition, it is preferable that the amount of moisture in the hollow portion V1 is small. That is, from the viewpoint of suppressing condensation on the inside of the protective film 150 due to the storage environment, the dew point temperature of the gas filled in the hollow portion V1 is preferably -80°C to -50°C. By doing so, condensation does not form inside the protective film 150, and when the sputtering target 100 is used, a film can be formed without causing arcing or the like.

(保護膜)(Protective film)

保護膜150使用膜狀的樹脂。作為保護膜150的材料,可以使用將不同性質的多個膜層壓而成的層壓膜。例如,可以使用將功能性膜夾在2個聚乙烯膜之間而成的層壓膜。聚乙烯膜可以使用受熱熔化溫度比功能性膜的熔化溫度低的材料。由於採用利用聚乙烯膜夾持功能性膜的結構,所以在熱封時聚乙烯膜彼此切實地熔化,從而能夠切實地進行保護膜的密封。優選功能性膜的透氧度及透濕度中的至少一個比聚乙烯膜低。另外,優選功能性膜的穿刺強度及拉伸強度中的至少一個比聚乙烯膜高。The protective film 150 uses a film-shaped resin. As a material of the protective film 150, a laminated film obtained by laminating a plurality of films of different properties can be used. For example, a laminate film formed by sandwiching a functional film between two polyethylene films can be used. For the polyethylene film, a material whose melting temperature under heating is lower than that of the functional film can be used. Due to the structure in which the functional film is sandwiched by the polyethylene film, the polyethylene films are reliably melted with each other during heat sealing, so that the protective film can be reliably sealed. It is preferable that at least one of the oxygen permeability and moisture permeability of the functional film is lower than that of the polyethylene film. In addition, it is preferable that at least one of the puncture strength and the tensile strength of the functional film is higher than that of the polyethylene film.

具體而言,作為功能性膜,可以使用出光統一科技(Idemitsu Unitech)製造的UNLION(ユニロン:注冊商標),優選可以使用旭化成製造的Saran Wrap(サランラップ:注冊商標),進而優選可以使用可樂麗(KURARAY)製造的EVOH(エバール:注冊商標)膜。在此,UNLION、Saran Wrap以及EVOH膜的物性如下。此外,功能性膜不限定於下述的膜,可以根據不同目的使用各種膜。Specifically, as the functional film, UNLION (Union: registered trademark) manufactured by Idemitsu Unitech can be used, preferably, Saran Wrap (registered trademark) manufactured by Asahi Kasei can be used, and more preferably, Kuraray ( KURARAY) manufactured EVOH (エバール: registered trademark) film. Here, the physical properties of UNLION, Saran Wrap, and EVOH films are as follows. In addition, the functional film is not limited to the following films, and various films can be used according to different purposes.

[UNLION][UNLION]

透氧度(20℃ 90%RH):37cc/d·atmOxygen permeability (20℃ 90%RH): 37cc/d·atm

透濕度(40℃ 90%RH):90g/m2·dayMoisture permeability (40℃ 90%RH): 90g/m2·day

穿刺強度:16.0kgf(10.9×10-3MPa)Puncture strength: 16.0kgf (10.9×10-3MPa)

拉伸強度:260MPaTensile strength: 260MPa

[Saran Wrap][Saran Wrap]

透氧度(20℃ 90%RH):60cc/d·atmOxygen permeability (20℃ 90%RH): 60cc/d·atm

透濕度(40℃ 90%RH):12g/m2·dayMoisture permeability (40℃ 90%RH): 12g/m2·day

拉伸強度:470MPaTensile strength: 470MPa

[EVOH膜][EVOH film]

透氧度(20℃ 90%RH):30cc/d·atmOxygen permeability (20℃ 90%RH): 30cc/d·atm

透濕度(40℃ 90%RH):5.3g/m2·dayMoisture permeability (40℃ 90%RH): 5.3g/m2·day

穿刺強度:11.1kgf(10.9×10-3MPa)Puncture strength: 11.1kgf (10.9×10-3MPa)

拉伸強度:40MPaTensile strength: 40MPa

[實施例][Example]

基於實施例、比較例具體說明本發明。以下的實施例、比較例的記載僅是用於容易理解本發明的技術內容的具體實施例,本發明的技術範圍不受這些具體實施例的限制。此外,使用圖12進行說明,圖12為對實施例1至7及比較例1至3中組裝的濺射靶的保護蓋及其周圍進行說明的放大圖。The present invention will be specifically described based on Examples and Comparative Examples. The descriptions of the following examples and comparative examples are only specific examples for easily understanding the technical content of the present invention, and the technical scope of the present invention is not limited by these specific examples. In addition, description will be made using FIG. 12, which is an enlarged view illustrating the protective cover of the sputtering target assembled in Examples 1 to 7 and Comparative Examples 1 to 3 and its surroundings.

(實施例1)(Example 1)

首先,分別準備3個下述的圓筒型濺射靶材210和1個下記的圓筒型背襯管120。將圓筒型背襯管120以使該圓筒型背襯管的端部121的外周面121c在中心軸C方向上露出9mm的方式通過接合材料接合到圓筒型濺射靶材210的內側,組裝成濺射靶200。First, three cylindrical sputtering targets 210 described below and one cylindrical backing tube 120 described below are prepared. The cylindrical backing tube 120 was joined to the inside of the cylindrical sputtering target 210 by a joining material so that the outer peripheral surface 121c of the end 121 of the cylindrical backing tube was exposed by 9 mm in the direction of the central axis C ,Assemble into a sputtering target 200.

<圓筒型濺射靶材><Cylindrical sputtering target>

圓筒軸向的長度:243mmThe axial length of the cylinder: 243mm

圓筒外徑:153mmCylinder outer diameter: 153mm

圓筒內徑:135mmInner diameter of cylinder: 135mm

材質:氧化銦錫(ITO)Material: Indium Tin Oxide (ITO)

<圓筒型背襯管><Cylinder type backing pipe>

圓筒軸向的長度:785mmThe axial length of the cylinder: 785mm

圓筒外徑:133mmCylinder outer diameter: 133mm

圓筒內徑:126mmCylinder inner diameter: 126mm

材質:鈦(Ti)Material: Titanium (Ti)

<接合材料><Joint material>

材質:銦(In)Material: Indium (In)

接著,如表1所示,以使聚丙烯製成的保護蓋130的平均壁厚D1至D3分別為3mm的方式並以如下方式製作出保護蓋。此外,保護蓋130通過注塑成型來製造。Next, as shown in Table 1, a protective cover was produced in the following manner so that the average thickness D1 to D3 of the protective cover 130 made of polypropylene was 3 mm, respectively. In addition, the protective cover 130 is manufactured by injection molding.

在圓筒型背襯管120的在中心軸C方向上的兩端部121,以使間隙W為0.3mm的方式覆蓋了保護蓋130。然後,對該濺射靶200進行了下述評價。At both end portions 121 of the cylindrical backing tube 120 in the direction of the central axis C, the protective cover 130 is covered so that the gap W is 0.3 mm. Then, the sputtering target 200 was evaluated as follows.

<落下試驗><drop test>

首先,準備由厚度為20mm的氨基甲酸乙酯材料覆蓋的鋁板(長300mm×寬300mm×厚度10mm)。接著,從距離上述板高度為300mm的位置,使背襯管120的端面121b在中心軸C方向上向上述板落下。接著,回收落下後的濺射靶,卸下保護蓋130,目視觀察圓筒型背襯管120的端部121及圓筒型濺射靶材210的端部211。在表1中表示其結果。First, an aluminum plate (300 mm long×300 mm wide×10 mm thick) covered with a urethane material having a thickness of 20 mm is prepared. Next, the end surface 121b of the backing tube 120 is dropped toward the plate in the direction of the central axis C from a position having a height of 300 mm from the plate. Next, the dropped sputtering target is recovered, the protective cover 130 is removed, and the end 121 of the cylindrical backing tube 120 and the end 211 of the cylindrical sputtering target 210 are visually observed. Table 1 shows the results.

(實施例2)(Example 2)

如表1所示,除了將間隙W變更為0.1mm以外,以與實施例1相同的方式進行評價。此外,在表1中表示評價結果。As shown in Table 1, the evaluation was performed in the same manner as in Example 1, except that the gap W was changed to 0.1 mm. In addition, the evaluation results are shown in Table 1.

(實施例3)(Example 3)

如表1所示,除了將保護蓋130的壁厚D1至D3分別變更為5mm以外,以與實施例1相同的方式進行評價。此外,在表1中表示評價結果。As shown in Table 1, the evaluation was performed in the same manner as in Example 1 except that the thicknesses D1 to D3 of the protective cover 130 were changed to 5 mm, respectively. In addition, the evaluation results are shown in Table 1.

(實施例4)(Example 4)

如表1所示,除了將保護蓋130的材質變更為聚四氟乙烯(PTFE)以外,以與實施例1相同的方式進行評價。此外,在表1中表示評價結果。As shown in Table 1, the evaluation was performed in the same manner as in Example 1 except that the material of the protective cover 130 was changed to polytetrafluoroethylene (PTFE). In addition, the evaluation results are shown in Table 1.

(實施例5)(Example 5)

如表1所示,除了將保護蓋130的材質變更為矽橡膠以外,以與實施例1相同的方式進行評價。此外,在表1中表示評價結果。As shown in Table 1, the evaluation was performed in the same manner as in Example 1 except that the material of the protective cover 130 was changed to silicone rubber. In addition, the evaluation results are shown in Table 1.

(實施例6)(Example 6)

如表1所示,除了將保護蓋130的材質變更為氨基甲酸乙酯橡膠以外,以與實施例1相同的方式進行評價。此外,在表1中表示評價結果。As shown in Table 1, the evaluation was performed in the same manner as in Example 1, except that the material of the protective cover 130 was changed to urethane rubber. In addition, the evaluation results are shown in Table 1.

(實施例7)(Example 7)

如表1所示,除了將圓筒型濺射靶材210變更為IZO制以外,以與實施例1相同的方式進行評價。此外,在表1中表示評價結果。As shown in Table 1, the evaluation was performed in the same manner as in Example 1 except that the cylindrical sputtering target 210 was changed to IZO. In addition, the evaluation results are shown in Table 1.

(比較例1)(Comparative example 1)

如表1所示,除了將間隙W變更為1.0mm以外,以與實施例1相同的方式進行評價。此外,在表1中表示評價結果。As shown in Table 1, the evaluation was performed in the same manner as in Example 1, except that the gap W was changed to 1.0 mm. In addition, the evaluation results are shown in Table 1.

(比較例2)(Comparative example 2)

如表1所示,除了將保護蓋130的壁厚D1至D3分別變更為1mm以外,以與實施例1相同的方式進行評價。此外,在表1中表示評價結果。As shown in Table 1, the evaluation was performed in the same manner as in Example 1 except that the thicknesses D1 to D3 of the protective cover 130 were changed to 1 mm, respectively. In addition, the evaluation results are shown in Table 1.

(比較例3)(Comparative example 3)

如表1所示,除了將保護蓋130的材質變更為不銹鋼(SUS)以外,以與實施例1相同的方式進行評價。此外,在表1中表示評價結果。As shown in Table 1, the evaluation was performed in the same manner as in Example 1, except that the material of the protective cover 130 was changed to stainless steel (SUS). In addition, the evaluation results are shown in Table 1.

[表1]

Figure 02_image001
[Table 1]
Figure 02_image001

根據表1,在實施例1至7中,經確認,在落下試驗中,背襯管的端部的內周面側的密封面沒有損傷,背襯管的端部沒有變形。進而,經確認,圓筒型濺射靶材的端部也沒有損傷或變形。因此,可以說在圓筒型背襯管的端部覆蓋保護蓋並且該保護蓋含有合成樹脂是有用的。According to Table 1, in Examples 1 to 7, it was confirmed that in the drop test, the sealing surface on the inner peripheral surface side of the end of the backing tube was not damaged, and the end of the backing tube was not deformed. Furthermore, it was confirmed that the end of the cylindrical sputtering target was not damaged or deformed. Therefore, it can be said that it is useful to cover the protective cover at the end of the cylindrical backing tube and that the protective cover contains synthetic resin.

[本發明] 100、200‧‧‧濺射靶 110、210‧‧‧圓筒型濺射靶材 110a‧‧‧內周面 111、211‧‧‧端部 111a‧‧‧端面 111b‧‧‧內周面 111c‧‧‧外周面 120‧‧‧圓筒型背襯管 120a‧‧‧內周面 120b‧‧‧外周面 121‧‧‧端部 121a‧‧‧內周面 121b‧‧‧端面 121c‧‧‧外周面 130‧‧‧保護蓋 131‧‧‧缺口部 131a‧‧‧凹面 131b‧‧‧隆起面 131b1‧‧‧階梯面 132a‧‧‧外側外周面 132b‧‧‧外側內周面 133a‧‧‧內側外周面 133b‧‧‧內側內周面 134‧‧‧端面 140‧‧‧接合層 150‧‧‧保護膜 C‧‧‧中心軸 D1至D3‧‧‧壁厚 d1、d2‧‧‧距離 H‧‧‧通孔 L‧‧‧距離 Lv‧‧‧線 V1、V2‧‧‧中空部 W‧‧‧間隙[this invention] 100、200‧‧‧Sputtering target 110、210‧‧‧Cylinder sputtering target 110a‧‧‧Inner peripheral surface 111、211‧‧‧End 111a‧‧‧End 111b‧‧‧Inner peripheral surface 111c‧‧‧Peripheral surface 120‧‧‧Cylinder type backing tube 120a‧‧‧Inner peripheral surface 120b‧‧‧Perimeter 121‧‧‧End 121a‧‧‧Inner peripheral surface 121b‧‧‧End 121c‧‧‧Perimeter 130‧‧‧Protection cover 131‧‧‧Notch 131a‧‧‧Concave 131b‧‧‧raised face 131b1‧‧‧step surface 132a‧‧‧Outer peripheral surface 132b‧‧‧Outer inner circumferential surface 133a‧‧‧Inner peripheral surface 133b‧‧‧Inner inner circumferential surface 134‧‧‧End 140‧‧‧Joint layer 150‧‧‧Protection film C‧‧‧Central axis D1 to D3 ‧‧‧ wall thickness d1, d2‧‧‧Distance H‧‧‧Through hole L‧‧‧Distance Lv‧‧‧line V1, V2 ‧‧‧ Hollow Department W‧‧‧clearance

圖1A是用於說明本發明的濺射靶的一實施方式的概略剖視圖。 圖1B是說明圖1A所示的保護蓋及其周圍的放大圖。 圖1C是說明圖1A所示的保護蓋的放大圖。 圖2是圖1A的X-X剖視圖。 圖3是表示作為本發明的濺射靶的一實施方式的保護蓋的一實施例的概略剖視圖。 圖4是表示作為本發明的濺射靶的一實施方式的保護蓋的另一實施例的概略剖視圖。 圖5是表示作為本發明的濺射靶的一實施方式的保護蓋的另一實施例的概略剖視圖。 圖6是表示作為本發明的濺射靶的一實施方式的保護蓋的另一實施例的概略剖視圖。 圖7是表示作為本發明的濺射靶的一實施方式的保護蓋的另一實施例的概略剖視圖。 圖8是用於說明本發明的濺射靶的另一實施方式的概略剖視圖。 圖9是表示本發明的濺射靶的製造方法的一實施方式的概略內容的流程圖。 圖10是表示本發明的濺射靶的包裝方法的一實施方式的概略內容的流程圖。 圖11是表示通過本發明的濺射靶的包裝方法的一實施方式包裝而成的濺射靶的概略剖視圖。 圖12是用於說明實施例1至7及比較例1至3中組裝的濺射靶的保護蓋及其周圍的放大圖。FIG. 1A is a schematic cross-sectional view for explaining an embodiment of the sputtering target of the present invention. FIG. 1B is an enlarged view illustrating the protective cover shown in FIG. 1A and its surroundings. FIG. 1C is an enlarged view illustrating the protective cover shown in FIG. 1A. FIG. 2 is a cross-sectional view taken along X-X in FIG. 1A. 3 is a schematic cross-sectional view showing an example of a protective cover as an embodiment of the sputtering target of the present invention. 4 is a schematic cross-sectional view showing another example of a protective cover as an embodiment of the sputtering target of the present invention. FIG. 5 is a schematic cross-sectional view showing another example of the protective cover as an embodiment of the sputtering target of the present invention. 6 is a schematic cross-sectional view showing another example of a protective cover as an embodiment of the sputtering target of the present invention. 7 is a schematic cross-sectional view showing another example of a protective cover as an embodiment of the sputtering target of the present invention. 8 is a schematic cross-sectional view for explaining another embodiment of the sputtering target of the present invention. 9 is a flowchart showing an outline of an embodiment of a method of manufacturing a sputtering target of the present invention. FIG. 10 is a flowchart showing an outline of an embodiment of the sputtering target packaging method of the present invention. 11 is a schematic cross-sectional view showing a sputtering target packaged by an embodiment of the sputtering target packaging method of the present invention. 12 is an enlarged view for explaining the protective cover of the sputtering target assembled in Examples 1 to 7 and Comparative Examples 1 to 3 and its surroundings.

100‧‧‧濺射靶 100‧‧‧Sputtering target

110‧‧‧圓筒型濺射靶材 110‧‧‧Cylinder sputtering target

111‧‧‧端部 111‧‧‧End

111a‧‧‧端面 111a‧‧‧End

120‧‧‧圓筒型背襯管 120‧‧‧Cylinder type backing tube

121‧‧‧端部 121‧‧‧End

121a‧‧‧內周面 121a‧‧‧Inner peripheral surface

121b‧‧‧端面 121b‧‧‧End

121c‧‧‧外周面 121c‧‧‧Perimeter

130‧‧‧保護蓋 130‧‧‧Protection cover

131‧‧‧缺口部 131‧‧‧Notch

131a‧‧‧凹面 131a‧‧‧Concave

131b‧‧‧隆起面 131b‧‧‧raised face

132a‧‧‧外側外周面 132a‧‧‧Outer peripheral surface

132b‧‧‧外側內周面 132b‧‧‧Outer inner circumferential surface

133a‧‧‧內側外周面 133a‧‧‧Inner peripheral surface

133b‧‧‧內側內周面 133b‧‧‧Inner inner circumferential surface

134‧‧‧端面 134‧‧‧End

140‧‧‧接合層 140‧‧‧Joint layer

C‧‧‧中心軸 C‧‧‧Central axis

D1至D3‧‧‧壁厚 D1 to D3 ‧‧‧ wall thickness

V1、V2‧‧‧中空部 V1, V2 ‧‧‧ Hollow Department

Claims (21)

一種濺射靶,包括:一圓筒型濺射靶材;一圓筒型背襯管,通過一接合材料與該圓筒型濺射靶材的內側接合,且該圓筒型背襯管的在中心軸方向上的長度比該圓筒型濺射靶材的在中心軸方向上的長度長;以及一保護蓋,覆蓋該圓筒型背襯管的在中心軸方向上的至少一端部;該保護蓋含有一合成樹脂。 A sputtering target includes: a cylindrical sputtering target; a cylindrical backing tube, which is joined to the inside of the cylindrical sputtering target by a bonding material, and the cylindrical backing tube is at the center The length in the axial direction is longer than the length of the cylindrical sputtering target in the central axis direction; and a protective cover covering at least one end of the cylindrical backing tube in the central axis direction; the protection The cover contains a synthetic resin. 如請求項1所述之濺射靶,其中該保護蓋覆蓋該圓筒型背襯管的在中心軸方向上的兩端部。 The sputtering target according to claim 1, wherein the protective cover covers both ends of the cylindrical backing tube in the direction of the central axis. 如請求項1所述之濺射靶,其中該保護蓋的在軸向上的一端部沿圓周方向形成一凹狀的缺口部,該圓筒型背襯管的在中心軸方向上的該至少一端部插入該缺口部。 The sputtering target according to claim 1, wherein one end of the protective cover in the axial direction forms a concave notch in the circumferential direction, and the at least one end of the cylindrical backing tube in the direction of the central axis Part is inserted into the notch. 如請求項2所述之濺射靶,其中該保護蓋的在軸向上的一端部沿圓周方向形成一凹狀的缺口部,該圓筒型背襯管的在中心軸方向上的該至少一端部插入該缺口部。 The sputtering target according to claim 2, wherein one end of the protective cover in the axial direction forms a concave notch in the circumferential direction, and the at least one end of the cylindrical backing tube in the direction of the central axis Part is inserted into the notch. 如請求項3所述之濺射靶,其中該缺口部的一外側內周面與該圓筒型背襯管的在中心軸方向上的該端部的一外周面之間的間隙為0.1mm以上且小於1.0mm。 The sputtering target according to claim 3, wherein a gap between an outer inner peripheral surface of the notch portion and an outer peripheral surface of the end portion of the cylindrical backing tube in the direction of the central axis is 0.1 mm Above and less than 1.0mm. 如請求項4所述之濺射靶,其中該缺口部的一外側內周面與該圓筒型背襯管的在中心軸方向上的該端部的一外周面之間的間隙為0.1mm以上且小於1.0mm。 The sputtering target according to claim 4, wherein a gap between an outer inner peripheral surface of the notch portion and an outer peripheral surface of the end portion of the cylindrical backing tube in the direction of the central axis is 0.1 mm Above and less than 1.0mm. 如請求項3所述之濺射靶,其中該缺口部與該圓筒型背襯管的該端部的一端面、一外周面以及一內周面抵接。 The sputtering target according to claim 3, wherein the notch portion abuts an end surface, an outer peripheral surface, and an inner peripheral surface of the end portion of the cylindrical backing tube. 如請求項4所述之濺射靶,其中該缺口部與該圓筒型背襯管的該端部的一端面、一外周面以及一內周面抵接。 The sputtering target according to claim 4, wherein the notch portion abuts an end surface, an outer peripheral surface, and an inner peripheral surface of the end portion of the cylindrical backing tube. 如請求項3所述之濺射靶,其中該保護蓋還覆蓋該圓筒型濺射靶材的在中心軸方向上的該端部。 The sputtering target according to claim 3, wherein the protective cover also covers the end of the cylindrical sputtering target in the direction of the central axis. 如請求項4所述之濺射靶,其中該保護蓋還覆蓋該圓筒型濺射靶材的在中心軸方向上的該端部。 The sputtering target according to claim 4, wherein the protective cover also covers the end of the cylindrical sputtering target in the direction of the central axis. 如請求項1至10任一項所述之濺射靶,其中該合成樹脂是從由矽橡膠、維通橡膠、氟橡膠、丁基橡膠、丙烯酸橡膠、乙丙橡膠、氨基甲酸乙酯橡膠、聚酯類彈性體、聚烯烴類彈性體、氟類彈性體、矽類彈性體、丁二烯類彈性體、聚醯胺類彈性體、聚苯乙烯類彈性體、氨基甲酸乙酯類彈性體、聚氨酯樹脂、柔性環氧樹脂、氟樹脂、聚碳酸酯、聚丙烯、聚乙烯、聚對苯二甲酸乙二醇酯以及聚萘二甲酸乙二醇酯所構成的群組中選擇的至少一種。 The sputtering target according to any one of claims 1 to 10, wherein the synthetic resin is made of silicone rubber, Viton rubber, fluororubber, butyl rubber, acrylic rubber, ethylene propylene rubber, urethane rubber, Polyester elastomer, polyolefin elastomer, fluorine elastomer, silicon elastomer, butadiene elastomer, polyamide elastomer, polystyrene elastomer, urethane elastomer , Polyurethane resin, flexible epoxy resin, fluororesin, polycarbonate, polypropylene, polyethylene, polyethylene terephthalate, and polyethylene naphthalate. . 如請求項1至10任一項所述之濺射靶,其中該合成樹脂為聚四氟乙烯。 The sputtering target according to any one of claims 1 to 10, wherein the synthetic resin is polytetrafluoroethylene. 如請求項1至10任一項所述之濺射靶,其中該保護蓋的壁厚為2.0mm以上。 The sputtering target according to any one of claims 1 to 10, wherein the wall thickness of the protective cover is 2.0 mm or more. 如請求項1至10任一項所述之濺射靶,其中該保護蓋的壁厚為5.0mm以下。 The sputtering target according to any one of claims 1 to 10, wherein the wall thickness of the protective cover is 5.0 mm or less. 如請求項1至10任一項所述之濺射靶,其中該保護蓋的楊氏模量為2000MPa以下。 The sputtering target according to any one of claims 1 to 10, wherein the Young's modulus of the protective cover is 2000 MPa or less. 如請求項1至10任一項所述之濺射靶,其中該圓筒型濺射靶材包含從由ITO、ZnO、IZO以及IGZO所構成的群組中選擇的一種作為其主要成分。 The sputtering target according to any one of claims 1 to 10, wherein the cylindrical sputtering target contains one selected from the group consisting of ITO, ZnO, IZO, and IGZO as its main component. 如請求項1至10任一項所述之濺射靶,其中複數個該圓筒型濺射靶材以同軸方式排列。 The sputtering target according to any one of claims 1 to 10, wherein a plurality of the cylindrical sputtering targets are arranged coaxially. 一種濺射靶的包裝方法,用於包裝請求項1至17任一項所述的濺射靶,包括:將該圓筒型背襯管的一中空部的內部調節成一非活性氣體環境或一真空環境的工序;以及以覆蓋該圓筒型背襯管的兩端的開口部並密封該中空部的內部的方式形成一保護膜的工序。 A sputtering target packaging method for packaging the sputtering target according to any one of claims 1 to 17, comprising: adjusting the inside of a hollow portion of the cylindrical backing tube to an inert gas environment or a The step of vacuum environment; and the step of forming a protective film so as to cover the openings at both ends of the cylindrical backing tube and seal the inside of the hollow portion. 如請求項18所述之濺射靶的包裝方法,其中該中空部的內部的該非活性氣體的壓力為30kPa至60kPa。 The method of packaging a sputtering target according to claim 18, wherein the pressure of the inert gas inside the hollow portion is 30 kPa to 60 kPa. 如請求項18所述之濺射靶的包裝方法,其中該非活性氣體為氬氣或氮氣。 The method for packaging a sputtering target according to claim 18, wherein the inert gas is argon or nitrogen. 如請求項18至20任一項所述之濺射靶的包裝方法,其中該中空部的內部的該非活性氣體的露點溫度為-80℃至-50℃。 The method of packaging a sputtering target according to any one of claims 18 to 20, wherein a dew point temperature of the inert gas inside the hollow portion is -80°C to -50°C.
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