TWI692003B - Heat treatment device and its maintenance and repair method - Google Patents
Heat treatment device and its maintenance and repair method Download PDFInfo
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- TWI692003B TWI692003B TW107113021A TW107113021A TWI692003B TW I692003 B TWI692003 B TW I692003B TW 107113021 A TW107113021 A TW 107113021A TW 107113021 A TW107113021 A TW 107113021A TW I692003 B TWI692003 B TW I692003B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Abstract
本發明之熱處理裝置係將排氣口23與基板出入口不同地另設於腔室2之側壁,於該排氣口23連接有排出腔室2內之氣體之氣體回收部51。氣體回收部51係藉由搭扣鎖63自腔室2卸下,或安裝於腔室2。若將氣體回收部51自腔室2卸下,則排氣口23打開。該排氣口23為保養維修用之開口部。藉此,可在不增加開口部之個數下,利用與基板出入口不同地另行設置之腔室2之開口部而進行腔室2內之保養維修。In the heat treatment apparatus of the present invention, the exhaust port 23 and the substrate inlet and outlet are separately provided on the side wall of the chamber 2, and the exhaust port 23 is connected to a gas recovery part 51 that exhausts the gas in the chamber 2. The gas recovery part 51 is detached from the chamber 2 by a snap lock 63 or installed in the chamber 2. When the gas recovery part 51 is removed from the chamber 2, the exhaust port 23 is opened. The exhaust port 23 is an opening for maintenance. Thereby, without increasing the number of openings, it is possible to perform maintenance and repair in the chamber 2 by using the opening of the chamber 2 separately provided from the entrance and exit of the substrate.
Description
本發明係關於一種對半導體基板、液晶顯示用玻璃基板、光罩用玻璃基板、光碟用基板等之基板進行熱處理之熱處理裝置及其保養維修方法。The present invention relates to a heat treatment device and its maintenance method for heat treatment of substrates such as semiconductor substrate, glass substrate for liquid crystal display, glass substrate for photomask, substrate for optical disc and the like.
熱處理裝置具備腔室及熱處理板。熱處理板設置於腔室之內部。熱處理板對被以水平姿勢載置之基板進行熱處理,但在該熱處理上存在如下述之問題。亦即,在基板上塗佈有塗佈液。當基板由熱處理板加熱時,自塗佈液產生昇華物。而且,若昇華物被冷卻,則昇華物結晶化,而附著及堆積於腔室之內壁。針對此問題,熱處理裝置構成為排出腔室內之氣體,且利用捕集部去除昇華物(例如,參照專利文獻1~3)。The heat treatment device includes a chamber and a heat treatment plate. The heat treatment plate is arranged inside the chamber. The heat-treated plate heat-treats the substrate placed in a horizontal posture, but this heat treatment has the following problems. That is, the coating liquid is applied on the substrate. When the substrate is heated by the heat treatment plate, a sublimate is generated from the coating liquid. Furthermore, if the sublimate is cooled, the sublimate crystallizes and attaches and accumulates on the inner wall of the chamber. In response to this problem, the heat treatment device is configured to exhaust the gas in the chamber, and the sublimation substance is removed by the trap (for example, refer to
又,在專利文獻2、3中,揭示有具備相對於熱處理板升降之蓋狀之腔室之熱處理裝置。當蓋狀之腔室上升時,熱處理板之側方以整個周被開放。 [先前技術文獻] [專利文獻]In addition,
[專利文獻1] 日本特開平06-084782號公報 [專利文獻2] 日本專利第4467266號公報 [專利文獻3] 日本專利第4290579號公報[Patent Document 1] Japanese Patent Laid-Open No. 06-084782 [Patent Document 2] Japanese Patent No. 4467266 [Patent Document 3] Japanese Patent No. 4290579
[發明所欲解決之問題][Problems to be solved by the invention]
上述之專利文獻2、3之熱處理裝置構成為在取出基板時,蓋狀之腔室上升而熱處理板之側方以整個周被開放。然而,在為了調節內部壓力及氣體濃度而要求密閉性能之情形時,希望採用設置相對於熱處理板使基板自一方向進出之基板出入口之構成,但如此會另外需要與基板出入口不同之腔室保養維修用之開口部,且開口部之個數越少越好。The heat treatment devices of the above-mentioned
本發明係鑒於如此之事態而完成者,其目的在於提供一種可在不增加開口部之個數下,藉由與基板出入口不同地另行設置之腔室之開口部而進行腔室內之保養維修之熱處理裝置及其保養維修方法。 [解決問題之技術手段]The present invention has been completed in view of such a situation, and its object is to provide a maintenance chamber in a chamber that can be separately provided with a chamber opening different from the substrate entrance without increasing the number of openings Heat treatment device and its maintenance and repair method. [Technical means to solve the problem]
本發明為了達成如此之目的,而採用如下之構成。亦即,本發明之熱處理裝置之特徵在於具備:腔室,其收容基板;熱處理板,其設置於前述腔室內之下部,對基板進行熱處理;基板出入口,其設置於前述腔室之側壁;排氣口,其與前述基板出入口不同地另設於前述腔室之側壁;排氣管道部,其連接於前述排氣口而排出前述腔室內之氣體;及拆裝部,其用於將前述排氣管道部自前述腔室卸下,及將前述排氣管道部安裝於前述腔室。In order to achieve such an object, the present invention adopts the following configuration. That is, the heat treatment apparatus of the present invention is characterized by including: a chamber that houses the substrate; a heat treatment plate that is disposed below the chamber to perform heat treatment on the substrate; and a substrate entrance and exit that is disposed on the side wall of the chamber; row An air port, which is separately provided on the side wall of the chamber, different from the substrate inlet and outlet; an exhaust duct part, which is connected to the exhaust port to exhaust the gas in the chamber; and a disassembly part, which is used to separate the exhaust port The air duct portion is removed from the chamber, and the exhaust duct portion is installed in the chamber.
根據本發明之熱處理裝置,將排氣口與基板出入口不同地另設於腔室之側壁,於該排氣口連接有排出腔室內之氣體之排氣管道部。排氣管道部藉由拆裝部自腔室卸下,或安裝於腔室。若將排氣管道部自腔室卸下,則排氣口打開。該排氣口為保養維修用之開口部。藉此,可在不增加開口部之個數下,利用與基板出入口不同地另行設置之腔室之開口部而進行腔室內之保養維修。According to the heat treatment device of the present invention, the exhaust port and the substrate inlet and outlet are separately provided on the side wall of the chamber, and the exhaust port is connected to an exhaust duct portion that exhausts the gas in the chamber. The exhaust pipe part is removed from the chamber by the disassembly part or installed in the chamber. If the exhaust duct part is removed from the chamber, the exhaust port is opened. The exhaust port is an opening for maintenance. Thereby, without increasing the number of openings, maintenance and repair in the chamber can be performed by using the opening of the chamber separately provided from the entrance and exit of the substrate.
又,在上述之熱處理裝置中,前述拆裝部係固定件,較佳的是,前述固定件具備:承受構件,其設置於前述腔室及前述排氣管道部中之一者;及掛鉤可動部,其設置於前述腔室及前述排氣管道部中之另一者,且具有鉤扣於前述承受構件之掛鉤及操作前述掛鉤之桿;且藉由前述桿操作,一面將前述掛鉤鉤扣於前述承受構件,一面將前述排氣管道部按壓於前述腔室,且保持該鉤扣及按壓狀態,且藉由前述桿操作,釋放被保持之前述鉤扣及按壓狀態。Furthermore, in the above heat treatment apparatus, the detachable portion is a fixing member, preferably, the fixing member includes: a receiving member provided in one of the chamber and the exhaust duct portion; and a movable hook Part, which is provided in the other of the chamber and the exhaust duct part, and has a hook hooked on the bearing member and a lever operating the hook; and by the lever operation, the hook is hooked on one side On the receiving member, the exhaust duct portion is pressed against the chamber, and the hook and press state is maintained, and the held hook and press state is released by the lever operation.
腔室內之密閉很重要。因此,為了封蓋排氣口,而要求保持設置有排氣口之腔室與排氣管道部之接合面之密閉。然而,當以高溫進行熱處理時,在腔室與排氣管道部之接合面發生熔傷。又,當藉由螺栓將排氣管道部安裝於腔室時,在螺栓之螺紋部分亦會發生熔傷。因此,螺栓變得不易脫開而作業效率降低。又,有可能因卸下螺栓時之力而螺栓之頭部破碎。若螺栓之頭部破碎,則其後之對應變得困難。根據本發明之固定件,即便在發生因熱處理所致之熔傷時,利用桿操作仍可將排氣管道部自腔室卸下。因此,易於進行排氣管道部之卸下。又,由於可利用桿操作進行排氣管道部之安裝及卸下,因此不需要工具。如此般亦使排氣管道部之安裝及卸下變得容易。The tightness of the chamber is important. Therefore, in order to cover the exhaust port, it is required to keep the joint surface of the chamber provided with the exhaust port and the exhaust duct sealed tightly. However, when heat treatment is performed at a high temperature, fusion damage occurs on the junction surface of the chamber and the exhaust duct portion. In addition, when the exhaust duct part is installed in the chamber by the bolt, fusion damage may also occur in the threaded portion of the bolt. Therefore, the bolts are less likely to come off and work efficiency is reduced. Also, the head of the bolt may break due to the force when removing the bolt. If the head of the bolt is broken, subsequent correspondence becomes difficult. According to the fixing member of the present invention, even when a melt injury due to heat treatment occurs, the exhaust duct portion can be removed from the chamber by lever operation. Therefore, it is easy to remove the exhaust duct portion. In addition, since the operation of the lever can be used to install and remove the exhaust duct portion, no tools are required. This also makes it easy to install and remove the exhaust duct.
又,在上述之熱處理裝置中,較佳的是,前述熱處理板在將基板以水平姿勢載置之狀態下進行熱處理,前述排氣口在水平方向為扁平,且具有使前述熱處理板上之基板水平投影於設置有前述排氣口之前述腔室之側壁時之水平方向之投影長度以上的開口寬度。藉此,可通過用作保養維修用之開口部之排氣口進行基板之取出/放入。Furthermore, in the above heat treatment apparatus, it is preferable that the heat treatment plate performs heat treatment in a state where the substrate is placed in a horizontal posture, the exhaust port is flat in the horizontal direction, and has a substrate for making the heat treatment plate The width of the opening projected horizontally on the side wall of the chamber provided with the exhaust port is greater than the projection length in the horizontal direction. With this, the substrate can be taken out/in through the exhaust port used as the opening for maintenance.
又,本發明之熱處理裝置之保養維修方法係具備下述各者之熱處理裝置之保養維修方法,即:腔室,其收容基板;熱處理板,其設置於前述腔室內之下部,對基板進行熱處理;及基板出入口,其設置於前述腔室之側壁;該保養維修方法之特徵在於具備:藉由拆裝部,將連接於與前述基板出入口不同地另設於前述腔室之側壁之排氣口而排出前述腔室內之氣體的排氣管道部自前述腔室卸下之工序,及藉由前述拆裝部將前述排氣管道部安裝於前述腔室之工序。Moreover, the maintenance and repair method of the heat treatment apparatus of the present invention is a maintenance and repair method of the heat treatment apparatus provided with the following: a chamber, which houses a substrate; and a heat treatment plate, which is provided under the chamber and heat-treats the substrate ; And the substrate entrance and exit, which is provided on the side wall of the chamber; the maintenance and repair method is characterized by having: through the disassembly part, will be connected to the substrate entrance and exit different from the exhaust port of the chamber side wall The process of removing the exhaust duct part of the gas in the chamber from the chamber, and the process of attaching the exhaust duct part to the chamber by the dismounting part.
根據本發明之熱處理裝置之保養維修方法,將排氣口與基板出入口不同地另設於腔室之側壁,於該排氣口連接有排出腔室內之氣體之排氣管道部。排氣管道部藉由拆裝部自腔室卸下,或安裝於腔室。若將排氣管道部自腔室卸下,則排氣口打開。該排氣口形成保養維修用之開口部。藉此,可在不增加開口部之個數下,利用與基板出入口不同地另行設置之腔室之開口部而進行腔室內之保養維修。According to the maintenance method of the heat treatment device of the present invention, the exhaust port is separately provided on the side wall of the chamber differently from the substrate inlet and outlet, and the exhaust port is connected to an exhaust duct portion that exhausts the gas in the chamber. The exhaust pipe part is removed from the chamber by the disassembly part or installed in the chamber. If the exhaust duct part is removed from the chamber, the exhaust port is opened. The exhaust port forms an opening for maintenance. Thereby, without increasing the number of openings, maintenance and repair in the chamber can be performed by using the opening of the chamber separately provided from the entrance and exit of the substrate.
又,在上述之熱處理裝置之保養維修方法中,較佳的是更具備:在自前述腔室卸下前述排氣管道部之後,將具有連接有用於延伸至前述腔室外之信號線之溫度感測器的溫度測定用基板通過前述排氣口搬入前述腔室之工序;及在前述溫度測定用基板之搬入後,使用前述溫度測定用基板測定溫度之工序。In addition, in the maintenance method of the heat treatment device described above, it is preferable to further include: after removing the exhaust duct portion from the chamber, a temperature sense connected to a signal line for extending outside the chamber The step of carrying the temperature measurement substrate of the instrument into the chamber through the exhaust port; and the step of measuring the temperature using the temperature measurement substrate after the temperature measurement substrate is carried in.
無線之溫度測定用基板存在因熱處理板之加熱而破壞無線電路之情形。因此,使用有線之溫度測定用基板,但難以藉由基板搬送機器人通過基板出入口給送有線之溫度測定用基板。因此,可在自腔室卸下排氣管道部之後,將有線之溫度測定用基板通過排氣口容易地搬送至熱處理板。The wireless temperature measurement substrate may damage the wireless circuit due to heating of the heat treatment plate. Therefore, a wired substrate for temperature measurement is used, but it is difficult to feed the wired substrate for temperature measurement by the substrate transfer robot through the substrate entrance. Therefore, after removing the exhaust duct portion from the chamber, the wired temperature measurement substrate can be easily transferred to the heat treatment plate through the exhaust port.
又,在上述之熱處理裝置之保養維修方法中,較佳的是更具備下述工序:在前述溫度測定用基板之搬入後,通過與前述排氣管道部不同之、設置於蓋部之通路,一面將自前述溫度感測器延伸之前述信號線引出至腔室外,一面以封蓋前述排氣口之方式將前述蓋部安裝於前述腔室。若取代排氣管道部而將蓋部安裝於腔室,則排氣口由蓋部封蓋。因此,可抑制氣體通過排氣口出入,而可在抑制干擾之影響下進行溫度測定。In addition, in the maintenance method of the heat treatment apparatus described above, it is preferable to further include a step of passing the passage provided in the cover portion different from the exhaust duct portion after the temperature measurement substrate is carried in, On the one hand, the signal line extending from the temperature sensor is led out of the chamber, and on the other hand, the cover part is installed in the chamber so as to cover the exhaust port. If the cover portion is attached to the chamber instead of the exhaust duct portion, the exhaust port is covered by the cover portion. Therefore, it is possible to suppress the entry and exit of gas through the exhaust port, and it is possible to perform temperature measurement under the influence of interference suppression.
又,在上述之熱處理裝置之保養維修方法中,較佳的是前述安裝蓋部之工序利用具備設置於前述腔室及前述蓋部中之一者的承受構件、及設置於前述腔室及前述蓋部中之另一者且具有鉤扣於前述承受構件之掛鉤及操作前述掛鉤之桿的掛鉤可動部之固定件,且藉由前述桿操作,一面將前述掛鉤鉤扣於前述承受構件,一面將前述蓋部按壓於前述腔室,且保持該鉤扣及按壓狀態,而以封蓋前述排氣口之方式將前述蓋部安裝於前述腔室。由於藉由如此之固定件,一面將掛鉤鉤扣於承受構件,一面將蓋部按壓於腔室,且保持該鉤扣及按壓狀態,故可使設置有排氣口之腔室與蓋部密著。因此,可抑制氣體通過排氣口出入。 [發明之效果]In addition, in the above-mentioned maintenance method of the heat treatment apparatus, it is preferable that the step of attaching the cover uses the receiving member provided in one of the chamber and the cover, and the chamber and the The other of the cover parts has a hook that is hooked on the receiving member and a movable part of the hook movable part that operates the lever of the hook, and is operated by the lever to hook the hook to the bearing member The lid portion is pressed against the chamber, and the hook and the pressed state are maintained, and the lid portion is attached to the chamber so as to cover the exhaust port. With such a fixing member, the hook is hooked to the receiving member, and the lid is pressed to the chamber while maintaining the hook and the pressed state, so that the chamber provided with the exhaust port can be closed to the lid With. Therefore, the entry and exit of gas through the exhaust port can be suppressed. [Effect of invention]
根據本發明之熱處理裝置及其保養維修方法,當將排氣管道部自腔室卸下時,排氣口打開。該排氣口形成保養維修用之開口部。藉此,可在不增加開口部之個數下,利用與基板出入口不同地另行設置之腔室之開口部而進行腔室內之保養維修。According to the heat treatment device and its maintenance and repair method of the present invention, when the exhaust duct part is removed from the chamber, the exhaust port is opened. The exhaust port forms an opening for maintenance. Thereby, without increasing the number of openings, maintenance and repair in the chamber can be performed by using the opening of the chamber separately provided from the entrance and exit of the substrate.
[實施例][Example]
以下,參照圖式說明本發明之實施例1。圖1係實施例之熱處理裝置之概略構成圖。Hereinafter, the first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic configuration diagram of a heat treatment apparatus of an embodiment.
<熱處理裝置1之構成> 熱處理裝置1係對基板W進行熱處理者。熱處理裝置1具備:腔室2、熱處理板3、支持銷升降部4、氣體供給緩衝部5、惰性氣體供給部7、擋門部9、排氣管道部11、控制部13及設定部15。<Configuration of
又,本實施例之熱處理裝置1未形成如專利文獻2、3所述般蓋狀之腔室相對於熱處理板升降之構成。亦即,本實施例之熱處理裝置1以為了調節內部壓力及氣體濃度而可獲得密閉性能之方式構成。In addition, the
腔室2係收容基板W者。腔室2具備:基板出入口21、排氣口23及上部開口部25。基板出入口21設置於腔室2之側壁,係用於在腔室2內搬出及搬入基板W之開口。排氣口23係用於排出腔室2內之氣體之開口。又,排氣口23等將於後述。The
熱處理板3係在將基板W以水平姿勢載置之狀態下進行熱處理者。熱處理板3設置於腔室2內之下部。熱處理板3安裝於基座板27,藉由插入設置於腔室2之底部之另1個開口而配置。基座板27介以O型環RG而安裝於腔室2。又,為了防止O型環RG之劣化,而在O型環RG之附近設置供冷卻水循環之冷卻管28。The
熱處理板3具備加熱器29。加熱器29對熱處理板3進行溫度調節,例如,在300℃~400℃之範圍內進行調節。又,於熱處理板3埋設有未圖示之近接球。藉此,在基板W之下表面與熱處理板3之表面之間形成特定之間隙(例如0.1 mm)。The
支持銷升降部4具備:3個支持銷31(在圖1中因圖示之關係僅顯示2個)、升降構件33、及致動器35。3個支持銷31配置為在俯視下大致正三角形狀。支持銷31以貫通熱處理板3之方式設置。支持銷31由升降構件33予以支持,致動器35介以升降構件33使支持銷31升降。The support pin lifting section 4 includes: three support pins 31 (only two are shown due to the relationship in the figure in FIG. 1), a lifting
氣體供給緩衝部5以蓋於上部開口部25之方式,隔著O型環RG而安裝於腔室2。氣體供給緩衝部5構成為可對腔室2拆裝。若自腔室2卸下氣體供給緩衝部5,上部開口部25形成用於保養維修腔室2內之開口。氣體供給緩衝部5具備由例如沖孔金屬板構成之擴散板37。擴散板37使由惰性氣體供給部7供給之氮(N2
)氣通過擴散板37之貫通口37A朝熱處理空間HS擴散。又,熱處理空間HS形成為大致長方體。The
惰性氣體供給部7以氮氣為惰性氣體而供給至腔室2(氣體供給緩衝部5)。惰性氣體供給部7具備例如2個流體調整閥等,構成為可二階段地切換氮氣之流量。The inert
擋門部9設置於基板出入口21之前表面。擋門部9具備擋門本體39及致動器41。致動器41使擋門本體39在上下方向移動。藉此,使擋門本體39移動至實線或虛線之位置,而將基板出入口21開閉。又,於擋門本體39設置有O型環RG,以擋門本體39關閉基板出入口21時,O型環RG配置於擋門本體39與腔室2之間。The
控制部13具備:中央運算處理裝置(CPU)、記憶體、計時器。控制部13控制熱處理板3、支持銷升降部4、惰性氣體供給部7、擋門部9、排氣管道部11等之熱處理裝置1之各構成。於記憶體記憶有規定熱處理之程序之複數個製程條件或其他熱處理裝置1所需之動作程式。設定部15係由操作員操作者,或選擇複數個之製程條件之一個,或編輯製程條件,或指示處理之開始,或指示發生警報時之操作。又,設定部15除了液晶監視器等之顯示部外,並具備滑鼠、鍵盤、各種開關等之輸入部。The
<腔室2之排氣口23等及排氣管道部11之構成> 其次,說明腔室2之排氣口23等及排氣管道部11。圖2(a)係腔室2等之平面圖;圖2(b)係顯示自正面觀察腔室2時(AA視角)之排氣口23及腔室2之凸緣2B之圖。<Configuration of the
排氣口23係與基板出入口21不同地另設於腔室2之側壁。在本實施例中,排氣口23設置於與基板出入口21對向之腔室2之側壁。又,根據需要,排氣口23亦可不與基板出入口21對向地配置。排氣口23在水平方向為扁平。排氣口23具有與基板出入口21大致相同大小之開口。具體而言,排氣口23具有與腔室2之內部之寬度HA2大致相同之開口寬度HA1。亦即,排氣口23之開口寬度HA1和腔室2之左內側壁2L與右內側壁2R之間之寬度HA2大致相同。因此,在排氣口23未連接有排氣管道部11之情形時,亦可自排氣口23取出/放入基板W。The
又,排氣口23如圖2(b)、後述之圖5(a)般,具有與腔室2之內部之高度TA2大致相同之開口高度TA1。亦即,如圖5(a)所示般,排氣口23之開口高度TA1和腔室2之內部之頂面2U與基板載置面3A之間之高度TA2大致相同。In addition, as shown in FIG. 2(b) and FIG. 5(a) described later, the
又,在圖2(a)中,符號2A係形成有基板出入口21之凸緣,符號2C係形成有上部開口部25之凸緣。又,上部開口部25具有較基板W之直徑更大直徑之開口。In addition, in FIG. 2(a), the
熱處理裝置1一般而言搭載於具備複數個處理單元之基板處理裝置。因此,於基板出入口21側配置有搬送基板W之基板搬送機構TR(參照圖1)。亦即,基板出入口21面向基板處理裝置之內側而配置。又,在圖2(a)之左右方向及與紙面正交之方向上,配置有其他之處理單元。而且,在排氣口23側配置有基板處理裝置之罩。亦即,排氣口23面向基板處理裝置之外側。因此,當卸下基板處理裝置之罩時,排氣口23構成為朝向外側而顯現。The
返回圖1。排氣管道部11係用於排出腔室2內之氣體之機構。排氣管道部11具備:氣體回收部51、捕集部53、排氣管55、開閉閥57,吸氣器(aspirator)59、及空氣供給部61。吸氣器59作為泵發揮功能,產生用於通過氣體回收部51等而排出腔室2之內部之氣體之吸引力。空氣供給部61供給用於使吸氣器59動作之空氣。空氣供給部61具備:空氣配管61A、2個開閉閥61B、61C、及2個流量調整閥61D、61E。如圖1所示般,空氣供給部61構成為可二階段地切換空氣之流量。Return to Figure 1. The
圖3係顯示氣體回收部51及捕集部53之立體圖。圖4係該等之概略構成圖。FIG. 3 is a perspective view showing the
圖2(a)、圖3、圖4等所示之氣體回收部51係為了進行排氣而回收腔室2內之氣體者。氣體回收部51具有與圖2(a)、圖2(b)所示之排氣口23大致相同之大小(寬度HA1及高度TA1)之開口部51A。而且,氣體回收部51使其一端之開口部51A連接於排氣口23而安裝於腔室2。亦即,以開口部51A與排氣口23之位置一致之方式將氣體回收部51安裝於腔室2。The
捕集部53如圖4所示般連接於氣體回收部51之另一端之開口部51B。捕集部53係使由氣體回收部51回收之氣體中之昇華物結晶化,而去除結晶化之昇華物者。昇華物如上述般自基板W上之塗佈液產生。如圖4所示般,捕集部53具備:捕集流路53A、流入口53B、流出口側流路53D、流出口53E、作為氣體冷卻部之冷卻管53F、及昇華物收集部53G。As shown in FIG. 4, the
捕集流路53A形成於管狀(中空圓筒狀)之構件之內部,構成為下端53H被封閉。捕集流路53A係用於使由氣體回收部51回收之氣體通過者。流入口53B如圖4所示般連接於氣體回收部51之另一端之開口部51B。通過流入口53B流入之氣體在依次通過捕集流路53A、流出口側流路53D內後,從流出口53E流出。流出口側流路53D係連接捕集流路53A與流出口53E之間之流路。The
冷卻管53F設置於捕集流路53A之流入口53B與流出口側流路53D之間之捕集流路53A之外周。冷卻管53F以供冷卻水循環之方式形成,使氣體中之昇華物結晶化(固化)。流出口側流路53D在較捕集流路53A之下端53H更高之位置連接於捕集流路53A。藉此,在流出口側流路53D與下端53H之間,形成收集在冷卻管53F結晶化之昇華物的昇華物收集部53G。因此,可使結晶化之昇華物收集於昇華物收集部53G,且可使去除昇華物後之氣體依次通過流出口側流路53D、流出口53E而被給送至捕集部53之下游之排氣管55等。The
圖5(a)係將腔室2與氣體回收部51之連結部分放大後之縱剖面圖。圖5(b)係顯示自腔室2卸下氣體回收部51之狀態之縱剖面圖。FIG. 5(a) is an enlarged longitudinal cross-sectional view of the connecting portion between the
氣體回收部51構成為可對腔室2拆裝。亦即,熱處理裝置1具備用於自腔室2卸下氣體回收部51,及將氣體回收部51安裝於腔室2之搭扣鎖63。腔室2及氣體回收部51例如以不銹鋼構成。又,搭扣鎖63相當於本發明之拆裝部及固定件。The
搭扣鎖63具備承受構件64及掛鉤可動部65。承受構件64設置於腔室2之凸緣2B。另一方面,掛鉤可動部65(後述之基台65F)設置於氣體回收部51之凸緣51C。又,掛鉤可動部65具備:掛鉤65A、桿65B、臂65C、第1軸65D、第2軸65E、及基台65F。掛鉤65A係鉤扣於承受構件64者。桿65B係操作掛鉤65A者。桿65B相對於基台65F可繞第1軸65D旋轉地連結。於臂65C之一端設置有掛鉤65A,於臂65C之另一端設置有第2軸65E。臂65C相對於桿65B可繞第2軸65E旋轉地連結。The
搭扣鎖63利用桿65B之操作而一面將掛鉤65A鉤扣於承受構件64,一面將氣體回收部51按壓於腔室2,且保持該鉤扣及按壓狀態。又,搭扣鎖63利用桿65B之操作藉由操作掛鉤65A而釋放被保持之上述之鉤扣及按壓狀態。又,搭扣鎖63形成利用槓桿原理之構成,第1軸65D形成支點,第2軸65E形成作用點,夾著第2軸65E之第1軸65D之相反側之桿65B之位置(例如箭頭周邊)形成力點。The
如圖3所示般,搭扣鎖63設置於4處。又,於氣體回收部51之凸緣51C之上表面設置有2個L字構件66。L字構件66用於鉤扣於腔室2。L字構件66係將有重量之氣體回收部51可移動地臨時安裝(臨時固定)於腔室2者。因此,即便搭扣鎖63之掛鉤65A自承受構件64脫開,氣體回收部51亦被保持於所安裝之位置。圖6(a)係顯示利用L字構件66將氣體回收部51鉤扣於腔室2之狀態之縱剖面圖。圖6(b)係顯示自腔室2卸下氣體回收部51之狀態之縱剖面圖。As shown in FIG. 3, the
又,在圖5(a)中,亦可將掛鉤可動部65與承受構件64設置為相反。亦即,亦可將掛鉤可動部65設置於腔室2,將承受構件64設置於氣體回收部51。承受構件64設置於腔室2及氣體回收部51中之一者,掛鉤可動部65設置於腔室2及氣體回收部51中之另一者。又,在圖3中,搭扣鎖63之個數並不限定於4個,L字構件66並不限定於2個。如圖6(a)之虛線BL所示般,L字構件66亦可以載置氣體回收部51之方式設置於腔室2之凸緣2B之下表面。In addition, in FIG. 5( a ), the hook
又,於腔室2之凸緣2B設置有O型環RG1。O型環RG1配置於凸緣2B與氣體回收部51之凸緣51C之間。又,於凸緣2B,在O型環RG1之附近設置有供冷卻水循環之冷卻流路28A。藉由冷卻流路28A之冷卻可防止O型環RG1之劣化。In addition, an O-ring RG1 is provided on the
<熱處理裝置1之動作> 其次,針對熱處理裝置1之動作進行說明。參照圖1。擋門部9之致動器41使擋門本體39下降,而打開基板出入口21。且,支持銷升降部4之致動器35使支持銷31上升。基板搬送機構TR將基板W搬送至腔室2內之支持銷31上。在基板搬送機構TR後退至腔室2外之後,使擋門本體39上升而關閉基板出入口21。支持銷31保持上升之狀態不變。<Operation of
其後,置換腔室2內之氣體。亦即,惰性氣體供給部7將氮氣供給至腔室2。此時,排氣管道部11利用空氣供給部61將空氣供給至吸氣器59,而打開開閉閥57。藉此,排氣管道部11通過排氣口23排出腔室2內之氣體。又,朝腔室2之氮氣之供給、及腔室2內之氣體之排出根據預設之製程條件而被調整。Thereafter, the gas in the
其後,基於製程條件,當氧濃度成為特定值以下時,使支持銷31下降,而將基板W載置於熱處理板3上。藉此開始熱處理。當熱處理結束時,使支持銷31上升而冷卻基板W。冷卻後,停止氮氣之供給及排氣(關閉開閉閥57等)。而後,在基板出入口21打開後,基板搬送機構TR搬送熱處理後之基板W。Thereafter, based on the process conditions, when the oxygen concentration becomes a certain value or less, the
其次,說明氣體回收部51及捕集部53之動作。在基板W上塗佈有DSA(Directed Self-Assembly,定向自組裝)製程之包含嵌段共聚物(block copolymer)之塗佈液,或用於形成防反射膜之塗佈液。又,塗佈液並不限定於該等之液。當基板W被載置於熱處理板3且基板W成為高溫時,自塗佈液產生昇華物。詳細而言,於塗佈液之溶劑內溶出溶劑以外之成分,且所溶出之溶劑以外之成分與溶劑一起蒸發。因此,產生昇華物。所產生之昇華物包含於(混入)腔室2內之氣體。Next, the operations of the
含有昇華物之氣體通過排氣口23被排出。排氣口23如圖2(a)所示般具有與腔室2之內部之寬度HA2大致相同之寬度HA1。又,氣體回收部51於一端具有與排氣口23大致相同大小之開口部51A,且使其一端之開口部51A連接於排氣口23而被安裝於腔室2。因此,可在使氣體不滯留於圖2(a)之符號YS所示之四個角隅下,自腔室2內回收氣體。由氣體回收部51回收之氣體通過另一端之開口部51B被給送至捕集部53。在捕集部53,冷卻管53F冷卻被給送之氣體,而使氣體中之昇華物結晶化。結晶化之昇華物被收集於昇華物收集部53G,且去除昇華物後之氣體被給送至排氣管55而排出。The gas containing sublimate is discharged through the
<熱處理裝置1之保養維修方法> 其次,針對熱處理裝置1之保養維修方法進行說明。又,在本實施例中,以將溫度測定用基板81載置於熱處理板3而進行溫度測定之作業為一例針對保養維修方法進行說明。<Maintenance and Repair Method of
〔步驟S01〕氣體回收部51之卸下 在圖7(a)中,利用桿65B之操作解除搭扣鎖63之鎖定,而自腔室2卸下氣體回收部51。亦即,於在腔室2安裝有氣體回收部51時,搭扣鎖63保持一面將掛鉤65A鉤扣於承受構件64,一面相對於腔室2按壓氣體回收部51之狀態。利用桿65B操作而解除該被保持之鉤扣及按壓狀態。藉此,自腔室2卸下氣體回收部51。又,氣體回收部51利用圖6所示之L字構件66被鉤扣於腔室2而形成臨時安裝之狀態。[Step S01] Removal of the
氣體回收部51不僅可對腔室2拆裝,而且亦可對捕集部53(捕集下部68)拆裝。在圖7(a)中,卸下連結構件69,而將成為一體之氣體回收部51及捕集上部67、與包含冷卻管53F之捕集下部68分離。藉此,可無須自框架71卸下捕集下部68,或卸下與冷卻管53F連接之配管等。因此,可易於卸下氣體回收部51。於圖7(b)顯示亦解除L字構件66之鉤扣之狀態,而卸下氣體回收部51等後之狀態。The
〔步驟S02〕基板之手動搬入 在圖7(b)中,通過排氣口23搬入溫度測定用基板81。溫度測定用基板81如圖7(c)所示般為有線型。如為無線型,會有因為測定溫度高而破壞無線電路之情形。溫度測定用基板81為了在17個部位對基板面內進行溫度測定,而具備17個溫度感測器83。溫度感測器83係由熱電偶、測溫電阻體或熱阻器等構成。於溫度感測器83分別連接有用於延伸至腔室2外之信號線(配線)84。信號線84對未圖示之溫度計本體傳送溫度資訊等。在圖7(c)中,為了便於圖示,溫度測定用基板81具備1個溫度感測器83。[Step S02] Manual loading of the substrate In FIG. 7(b), the
又,溫度感測器83並不限定於17個。例如,溫度感測器83亦可為1個、5個、9個或其他之個數。亦即,溫度測定用基板81具備至少1個溫度感測器83。In addition, the number of
溫度測定用基板81之搬入係使用圖8之搬送治具86進行。在圖8中,搬送治具86具備:把手部87、干擾避免槽88及基板載置部89。把手部87係供保養維修人員抓取之部分。干擾避免槽88以不與熱處理裝置1之支持銷31干擾之方式設置。基板載置部89係載置溫度測定用基板81等之基板W之部分。The
在圖7(b)中,致動器35(參照圖1)經由升降構件33使支持銷31上升。上升後,保養維修人員將溫度測定用基板81載置於搬送治具86。其後,保養維修人員通過排氣口23使支持銷31通過干擾避免槽88,且使搬送治具86進入腔室2內。而後,保養維修人員將溫度測定用基板81載置於腔室2內之支持銷31上。載置後,保養維修人員使搬送治具86後退至腔室2外。圖7(c)係顯示已搬入溫度測定用基板81之狀態之圖。In FIG. 7( b ), the actuator 35 (see FIG. 1) raises the
〔步驟S03〕溫度測定用蓋部之安裝 在圖7(c)中,在溫度測定用基板81之搬入後,以封蓋排氣口23之方式將溫度測定用蓋部90安裝於腔室2。首先,將圖7(d)所示之溫度測定用蓋部90臨時安裝於腔室2。於溫度測定用蓋部90如圖7(d)所示般設置有2個L字構件66、缺口部91、及4個搭扣鎖63。將設置於溫度測定用蓋部90之L字構件66鉤扣於腔室2之凸緣2B(參照圖6(a))而臨時安裝。藉此,以封蓋排氣口23之方式將溫度測定用蓋部90安裝於腔室2。此時,如圖7(d)所示般,將自17個之溫度感測器83之各者延伸之信號線84通過設置於溫度測定用蓋部90之缺口部91而引出至腔室2外。[Step S03] Mounting of the lid portion for temperature measurement In FIG. 7(c), after the
在將溫度測定用蓋部90臨時安裝於腔室2之後,利用搭扣鎖63將溫度測定用蓋部90安裝於腔室2(正式安裝)。搭扣鎖63如上所述般構成為利用桿65B操作一面將掛鉤65A鉤扣於承受構件64一面將溫度測定用蓋部90按壓於腔室2,且保持該鉤扣及按壓狀態。又,搭扣鎖63構成為利用桿65B操作而釋放被保持之鉤扣及按壓狀態。After the
搭扣鎖63一面將掛鉤65A鉤扣於承受構件64,一面將溫度測定用蓋部90按壓於腔室2,且保持該鉤扣及按壓狀態。藉此,可使設置有排氣口23之腔室2與溫度測定用蓋部90密著。又,與藉由L字構件66將溫度測定用蓋部90臨時安裝於腔室2相比,可抑制氣體通過排氣口23出入。The
又,溫度測定用蓋部90相當於本發明之蓋部。缺口部91相當於本發明之通路。本發明之通路可為管狀通路。根據必要,亦可不設置用於將溫度測定用蓋部90安裝於腔室2之搭扣鎖63及L字構件66之任一者。In addition, the
〔步驟S04〕溫度測定 其後,使支持銷31下降,而將溫度測定用基板81載置於熱處理板3上。使用溫度測定用基板81測定溫度。在溫度測定時,在腔室2內為大氣壓之狀態下進行。[Step S04] Temperature measurement After that, the
在本實施例之保養維修方法中,在相對於腔室2將氣體回收部51卸下之後,將具有溫度感測器83之溫度測定用基板81通過排氣口23搬入腔室2內。無線之溫度測定用基板存在因熱處理板3之加熱而破壞無線電路之情形。因此,使用有線(信號線84)之溫度測定用基板81,但難以藉由基板搬送機構TR(機器人)通過基板出入口21給送有線之溫度測定用基板81。因此,在相對於腔室2將氣體回收部51卸下之後,可將有線之溫度測定用基板81通過排氣口23容易地搬入腔室2內。In the maintenance method of this embodiment, after the
又,在本實施例之保養維修方法中,在溫度測定用基板81之搬入後,通過設置於與氣體回收部51不同之溫度測定用蓋部90之缺口部91,一面將自溫度感測器83延伸之信號線84引出至腔室2外,一面以封蓋排氣口23之方式將溫度測定用蓋部90安裝(臨時安裝)於腔室2。當取代氣體回收部51而安裝於腔室2時,排氣口23被溫度測定用蓋部90封蓋。因此,可抑制氣體通過排氣口23排氣口出入,而可在抑制干擾之影響下進行溫度測定。In addition, in the maintenance method of the present embodiment, after the
〔步驟S05〕溫度測定用蓋部之卸下 在溫度測定結束後,使支持銷31上升而使溫度測定用基板81離開熱處理板3。相對於腔室2將溫度測定用蓋部90卸下。亦即,利用搭扣鎖63釋放被保持之鉤扣及按壓狀態(解除鎖定)。此時,溫度測定用蓋部90利用L字構件66被臨時安裝於腔室2。解除由該L字構件66形成之鉤扣狀態,而相對於腔室2將溫度測定用蓋部90完全卸下。此時,如圖7(c)所示般,排氣口23顯現。[Step S05] Removal of the lid portion for temperature measurement After the temperature measurement is completed, the
〔步驟S06〕基板之手動搬出 在圖7(c)中,保養維修人員通過排氣口23一面使支持銷31通過干擾避免槽88,一面使搬送治具86進入腔室2內。其後,將支持銷31上之溫度測定用基板81載置於搬送治具86。而後,使搬送治具86後退而將溫度測定用基板81搬出至腔室2外。[Step S06] Manual removal of the substrate In FIG. 7(c), the maintenance personnel pass the
〔步驟S07〕氣體回收部51之安裝 在圖7(b)中,使支持銷31下降。其後,利用氣體回收部51之L字構件66如圖6所示般將氣體回收部51臨時安裝於腔室2。其後,利用連結構件69連結成為一體之氣體回收部51及捕集上部67、與包含冷卻管53F之捕集下部68。其後,利用搭扣鎖63之桿65B之操作而一面將掛鉤65A鉤扣於承受構件64一面將氣體回收部51按壓於腔室2,且保持該鉤扣及按壓狀態(鎖定)。藉此,將氣體回收部51安裝於腔室2。返回圖7(a)所示之狀態。[Step S07] Installation of the
根據本實施例,將排氣口23與基板出入口21不同地另設於腔室2之側壁,於該排氣口23連接有排出腔室2內之氣體之氣體回收部51。氣體回收部51係利用搭扣鎖63自腔室2卸下,且安裝於腔室2。若將氣體回收部51自腔室2卸下,則排氣口23打開。該排氣口23形成保養維修用之開口部。藉此,無需增加開口部之個數,而可利用與基板出入口21不同地另行設置之腔室2之開口部進行腔室2內之保養維修。According to the present embodiment, the
又,搭扣鎖63具備:承受構件64,其設置於腔室2;及掛鉤可動部65,其設置於氣體回收部51,且具有鉤扣於承受構件64之掛鉤65A及操作掛鉤65A之桿65B。搭扣鎖63利用桿65B之操作而一面將掛鉤65A鉤扣於承受構件64,一面將氣體回收部51按壓於腔室2,且保持該鉤扣及按壓狀態。又,搭扣鎖63利用桿65B操作而釋放被保持之上述之鉤扣及按壓狀態。Moreover, the
腔室2內之密閉很重要。因此,為了封蓋排氣口23,而要求保持設置有排氣口23之腔室2與氣體回收部51之接合面之密閉。然而,當以高溫進行熱處理時,在腔室2與氣體回收部51之接合面發生熔傷。又,當藉由螺栓將氣體回收部51安裝於腔室2時,在螺栓之螺紋部分亦產生熔傷。因此,螺栓變得不易脫開而作業效率降低。又,有可能因卸下螺栓時之力而螺栓之頭部破碎。若螺栓之頭部破碎,則其後之對應變得困難。根據本發明之固定件,即便在發生因熱處理所致之熔傷時,利用桿65B操作仍可將氣體回收部51自腔室2卸下,因此,易於進行氣體回收部51之卸下。又,由於可利用桿65B操作進行氣體回收部51之安裝及卸下,因此不需要工具。如此般亦使氣體回收部51之安裝及卸下變得容易。The sealing in the
本發明並不限定於上述實施形態,亦可如下述般實施變化。The present invention is not limited to the above-mentioned embodiment, and may be modified as follows.
(1)在上述之實施例中,氣體回收部51相對於腔室2之安裝係藉由搭扣鎖63進行。氣體回收部51相對於腔室2之安裝亦可利用如圖9所示之固定件93。固定件93具備承受構件94及掛鉤可動部95。承受構件94固定於凸緣2B。承受構件94具備傾斜部94A及保持部94B。傾斜部94A係相對於腔室2將氣體回收部51階段性地按壓者。在傾斜部94A與保持部94B之間存在階差。藉由該階差而在保持部94B保持掛鉤95A。(1) In the above embodiment, the
另一方面,掛鉤可動部95具備:掛鉤95A、桿95B、旋轉軸95D及基台95F。基台95F設置於氣體回收部51之凸緣51C。桿95B相對於基台95F可繞旋轉軸95D旋轉。於桿95B之一端設置有旋轉軸95D,於桿95B之另一端設置有掛鉤95A。On the other hand, the hook
亦即,固定件93構成為利用桿95B操作一面將掛鉤95A鉤扣於承受構件94一面將氣體回收部51按壓於腔室2,且保持該鉤扣及按壓狀態,又,利用桿95B操作而解除被保持之鉤扣及按壓狀態。That is, the fixing
(2)在上述之實施例中,氣體回收部51相對於腔室2之安裝係利用搭扣鎖63進行。又,在圖5(a)中,於腔室2之凸緣2B作為另外之構件而設置有承受構件64。此點亦可如圖10所示般,承受構件64一體形成於凸緣2B。(2) In the above embodiment, the
(3)在上述之實施例中,氣體回收部51相對於腔室2之安裝藉由單側2個搭扣鎖63之協同而進行。亦即,在圖5(a)中,係藉由上下2個搭扣鎖63進行。然而,亦可將上下2個搭扣鎖63之任一者置換為如圖11所示之由2個構件構成之接觸部97。(3) In the above-mentioned embodiment, the installation of the
(4)在上述之實施例及各變化例中,為了臨時安裝而設置L字構件66,但亦可根據需要不設置L字構件66。又,只要為可臨時安裝之臨時安裝構件即可,可不是L字形狀。(4) In the above-described embodiments and various modifications, the L-shaped
(5)在上述之實施例及各變化例中,排氣口23具有與腔室之內部之寬度HA2大致相同之開口寬度HA1。此點亦可如圖2(a)、圖2(b)所示般,排氣口23之開口寬度HA1未達腔室2之內部之寬度HA2。亦即,排氣口23亦可具有在使熱處理板3上之基板W水平投影於設置有排氣口23之腔室2之側壁時之水平方向之投影長度HA3以上之開口寬度HA1。藉此,可抑制至少基板W之上方之含有昇華物之氣體之滯留且通過排氣口23進行回收。另外,熱處理板3之基板載置面3A、及基板W為圓形,但亦可為矩形。(5) In the above-described embodiments and various modifications, the
1‧‧‧熱處理裝置2‧‧‧腔室2A‧‧‧凸緣2B‧‧‧凸緣2C‧‧‧凸緣2L‧‧‧左內側壁2R‧‧‧右內側壁2U‧‧‧頂面3‧‧‧熱處理板3A‧‧‧基板載置面4‧‧‧支持銷升降部5‧‧‧氣體供給緩衝部7‧‧‧惰性氣體供給部9‧‧‧擋門部11‧‧‧排氣管道部13‧‧‧控制部15‧‧‧設定部21‧‧‧基板出入口23‧‧‧排氣口25‧‧‧上部開口部27‧‧‧基座板28‧‧‧冷卻管28A‧‧‧冷卻流路29‧‧‧加熱器31‧‧‧支持銷33‧‧‧升降構件35‧‧‧致動器37‧‧‧擴散板37A‧‧‧貫通口39‧‧‧擋門本體41‧‧‧致動器51‧‧‧氣體回收部51A‧‧‧開口51B‧‧‧開口部51C‧‧‧凸緣53‧‧‧捕集部53A‧‧‧捕集流路53B‧‧‧流入口53D‧‧‧流出口側流路53E‧‧‧流出口53F‧‧‧冷卻管53G‧‧‧昇華物收集部53H‧‧‧下端55‧‧‧排氣管57‧‧‧開閉閥59‧‧‧吸氣器61‧‧‧空氣供給部61A‧‧‧空氣配管61B‧‧‧開閉閥61C‧‧‧開閉閥61D‧‧‧流量調整閥61E‧‧‧流量調整閥63‧‧‧搭扣鎖64‧‧‧承受構件65‧‧‧掛鉤可動部65A‧‧‧掛鉤65B‧‧‧桿65C‧‧‧臂65D‧‧‧第1軸65E‧‧‧第2軸65F‧‧‧基台66‧‧‧L字構件67‧‧‧捕集上部68‧‧‧捕集下部69‧‧‧連結構件71‧‧‧框架81‧‧‧溫度測定用基板83‧‧‧溫度感測器84‧‧‧信號線(配線)86‧‧‧搬送治具87‧‧‧把手部88‧‧‧干擾避免槽89‧‧‧基板載置部90‧‧‧溫度測定用蓋部91‧‧‧缺口部93‧‧‧固定件94‧‧‧承受構件94A‧‧‧傾斜部94B‧‧‧保持部95‧‧‧掛鉤可動部95A‧‧‧掛鉤95B‧‧‧桿95D‧‧‧旋轉軸95F‧‧‧基台97‧‧‧接觸部AA‧‧‧視角BL‧‧‧虛線HA1‧‧‧開口寬度/寬度HA2‧‧‧寬度HA3‧‧‧投影長度HS‧‧‧熱處理空間RG‧‧‧O型環RG1‧‧‧O型環TA1‧‧‧開口高度/高度TA2‧‧‧高度TR‧‧‧基板搬送機構(機器人)W‧‧‧基板YS‧‧‧角隅1‧‧‧heat treatment device 2‧‧‧chamber 2A‧‧‧flange 2B‧‧‧flange 2C‧‧‧flange 2L‧‧‧left inner side wall 2R‧‧‧right inner side wall 2U‧‧‧top surface 3‧‧‧Heat treatment board 3A‧‧‧Substrate mounting surface 4‧‧‧Support pin lifting section 5‧‧‧Gas supply buffer section 7‧‧‧Inert gas supply section 9‧‧‧Block section 11‧‧‧ Row Air duct part 13‧‧‧Control part 15‧‧‧Setting part 21‧‧‧Substrate inlet and outlet 23‧‧‧Exhaust port 25‧‧‧Upper opening 27‧‧‧Base plate 28‧‧‧Cooling tube 28A‧ ‧‧Cooling channel 29‧‧‧ Heater 31‧‧‧ Support pin 33‧‧‧Elevating member 35‧‧‧Actuator 37‧‧‧Diffusion plate 37A‧‧‧Through port 39‧‧‧Door body 41 ‧‧‧Actuator 51‧‧‧Gas recovery part 51A‧‧‧ opening 51B‧‧‧ opening 51C‧‧‧flange 53‧‧‧trap 53A‧‧‧trap flow channel 53B‧‧‧flow Inlet 53D‧‧‧Outlet side flow path 53E‧‧‧Outlet 53F‧‧‧Cooling pipe 53G‧‧‧Sublimate collection part 53H‧‧‧Lower end 55‧‧‧Exhaust pipe 57‧‧‧Open and close valve 59‧ ‧‧Aspirator 61‧‧‧Air supply part 61A‧‧‧Air piping 61B‧‧‧Open and close valve 61C‧‧‧Open and close valve 61D‧‧‧Flow adjustment valve 61E‧‧‧Flow adjustment valve 63‧‧‧ Lock 64‧‧‧Bearing member 65‧‧‧Hook movable part 65A‧‧‧Hook 65B‧‧‧ Rod 65C‧‧‧arm 65D‧‧‧1st axis 65E‧‧‧2nd axis 65F‧‧‧Abutment 66 ‧‧‧L-shaped member 67‧‧‧Capture upper part 68‧‧‧Capture lower part 69‧‧‧Coupling member 71‧‧‧Frame 81‧‧‧Temperature measurement substrate 83‧‧‧Temperature sensor 84‧‧ ‧Signal line (wiring)86‧‧‧‧Conveyor fixture 87‧‧‧Handle 88‧‧‧Interference avoidance slot 89‧‧‧Board mounting part 90‧‧‧Temperature measuring cover 91‧‧‧Notch 93 ‧‧‧Fixing member 94‧‧‧bearing member 94A‧‧‧inclined part 94B‧‧‧holding part 95‧‧‧hook movable part 95A‧‧‧hook 95B‧‧‧bar 95D‧‧‧rotating shaft 95F‧‧‧ Abutment 97‧‧‧ contact part AA‧‧‧angle of view BL‧‧‧ dotted line HA1‧‧‧ opening width/width HA2‧‧‧ width HA3‧‧‧projection length HS‧‧‧heat treatment space RG‧‧‧O-ring RG1‧‧‧O-ring TA1‧‧‧ opening height/height TA2‧‧‧height TR‧‧‧substrate transfer mechanism (robot) W‧‧‧substrate YS‧‧‧corner corner
圖1係實施例之熱處理裝置之概略構成圖。 圖2(a)係腔室等之平面圖,(b)係顯示自正面觀察腔室時之排氣口及腔室之凸緣之圖。 圖3係顯示氣體回收部及捕集部之立體圖。 圖4係顯示氣體回收部及捕集部之概略構成圖。 圖5(a)係將腔室與氣體回收部之連結部分放大之縱剖面圖,(b)係顯示自腔室卸下氣體回收部之狀態之縱剖面圖。 圖6(a)係顯示利用L字構件將氣體回收部鉤扣於腔室之狀態之縱剖面圖,(b)係顯示自腔室卸下氣體回收部之狀態之縱剖面圖。 圖7(a)係顯示將氣體回收部安裝於腔室及捕集下部之狀態之圖;(b)係顯示將氣體回收部自腔室及捕集下部卸下之狀態之圖;(c)係顯示將溫度測定用基板搬入腔室內之狀態之圖;(d)係顯示將溫度測定用蓋部安裝於腔室之狀態之圖。 圖8係用於說明搬送治具之圖。 圖9(a)係顯示固定件之變化例之平面圖;(b)係自右側觀察(a)之固定件等之右側視圖。 圖10係顯示固定件之變化例之圖。 圖11係顯示固定件之變化例之圖。FIG. 1 is a schematic configuration diagram of a heat treatment apparatus of an embodiment. Fig. 2 (a) is a plan view of the chamber and the like, and (b) is a view showing the exhaust port and the flange of the chamber when the chamber is viewed from the front. Fig. 3 is a perspective view showing a gas recovery part and a collection part. FIG. 4 is a schematic configuration diagram showing a gas recovery part and a collection part. Fig. 5 (a) is an enlarged longitudinal cross-sectional view of the connecting portion between the chamber and the gas recovery part, and (b) is a longitudinal cross-sectional view showing a state where the gas recovery part is removed from the chamber. 6(a) is a longitudinal cross-sectional view showing a state in which a gas recovery part is hooked to a chamber by an L-shaped member, and (b) is a longitudinal cross-sectional view showing a state in which the gas recovery part is detached from the chamber. Figure 7 (a) is a diagram showing the state where the gas recovery part is installed in the chamber and the lower part of the collection; (b) is a diagram showing the state where the gas recovery part is removed from the chamber and the lower part of the collection; (c) It is a figure which shows the state which carried the substrate for temperature measurement into a chamber; (d) is a figure which shows the state which attached the cover part for temperature measurement to a chamber. FIG. 8 is a diagram for explaining the transport jig. Fig. 9 (a) is a plan view showing a variation of the fixing member; (b) is a right side view of the fixing member and the like of (a) viewed from the right. Fig. 10 is a diagram showing a variation of the fixing member. Fig. 11 is a diagram showing a variation of the fixing member.
2‧‧‧腔室 2‧‧‧ chamber
2B‧‧‧凸緣 2B‧‧‧Flange
2C‧‧‧凸緣 2C‧‧‧Flange
2U‧‧‧頂面 2U‧‧‧Top
3‧‧‧熱處理板 3‧‧‧heat treatment board
3A‧‧‧基板載置面 3A‧‧‧Substrate mounting surface
5‧‧‧氣體供給緩衝部 5‧‧‧Gas supply buffer
23‧‧‧排氣口 23‧‧‧Exhaust
28‧‧‧冷卻管 28‧‧‧cooling tube
28A‧‧‧冷卻流路 28A‧‧‧cooling flow path
37‧‧‧擴散板 37‧‧‧Diffusion plate
51‧‧‧氣體回收部 51‧‧‧Gas Recovery Department
51A‧‧‧開口 51A‧‧‧Opening
51C‧‧‧凸緣 51C‧‧‧Flange
63‧‧‧搭扣鎖 63‧‧‧Snap lock
64‧‧‧承受構件 64‧‧‧ Bearing member
65‧‧‧掛鉤可動部 65‧‧‧Moveable part
65A‧‧‧掛鉤 65A‧‧‧Hook
65B‧‧‧桿 65B‧‧‧rod
65C‧‧‧臂 65C‧‧‧arm
65D‧‧‧第1軸 65D‧‧‧1st axis
65E‧‧‧第2軸 65E‧‧‧ 2nd axis
65F‧‧‧基台 65F‧‧‧Abutment
RG‧‧‧O型環 RG‧‧‧O-ring
RG1‧‧‧O型環 RG1‧‧‧O-ring
TA1‧‧‧開口高度/高度 TA1‧‧‧Opening height/height
TA2‧‧‧高度 TA2‧‧‧Altitude
Claims (5)
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