TWI689926B - 資料儲存裝置及其操作方法 - Google Patents

資料儲存裝置及其操作方法 Download PDF

Info

Publication number
TWI689926B
TWI689926B TW107115053A TW107115053A TWI689926B TW I689926 B TWI689926 B TW I689926B TW 107115053 A TW107115053 A TW 107115053A TW 107115053 A TW107115053 A TW 107115053A TW I689926 B TWI689926 B TW I689926B
Authority
TW
Taiwan
Prior art keywords
page
sequence
data
pages
memory
Prior art date
Application number
TW107115053A
Other languages
English (en)
Chinese (zh)
Other versions
TW201907401A (zh
Inventor
梯莫西 L 卡內帕
亞利 唐
史蒂芬 漢那
Original Assignee
美商司固科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商司固科技公司 filed Critical 美商司固科技公司
Publication of TW201907401A publication Critical patent/TW201907401A/zh
Application granted granted Critical
Publication of TWI689926B publication Critical patent/TWI689926B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/40—Bus structure
    • G06F13/4004—Coupling between buses
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0877—Cache access modes
    • G06F12/0882—Page mode
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0253—Garbage collection, i.e. reclamation of unreferenced memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668—Details of memory controller
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7201—Logical to physical mapping or translation of blocks or pages
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7205—Cleaning, compaction, garbage collection, erase control
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7211—Wear leveling

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Human Computer Interaction (AREA)
  • Read Only Memory (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
TW107115053A 2017-05-03 2018-05-03 資料儲存裝置及其操作方法 TWI689926B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/585,429 US9905294B1 (en) 2017-05-03 2017-05-03 Writing logically offset pages of data to N-level memory cells coupled to a common word line
US15/585,429 2017-05-03

Publications (2)

Publication Number Publication Date
TW201907401A TW201907401A (zh) 2019-02-16
TWI689926B true TWI689926B (zh) 2020-04-01

Family

ID=61225806

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107115053A TWI689926B (zh) 2017-05-03 2018-05-03 資料儲存裝置及其操作方法

Country Status (5)

Country Link
US (1) US9905294B1 (enExample)
JP (1) JP2018190483A (enExample)
KR (1) KR20180122565A (enExample)
CN (1) CN108806754B (enExample)
TW (1) TWI689926B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11609718B1 (en) * 2017-06-12 2023-03-21 Pure Storage, Inc. Identifying valid data after a storage system recovery
US11593262B1 (en) 2018-04-25 2023-02-28 Seagate Technology Llc Garbage collection command scheduling
US10922014B1 (en) 2018-06-05 2021-02-16 Seagate Technology Llc Die access order variation
US11138069B2 (en) 2018-06-11 2021-10-05 Seagate Technology, Llc Providing additional parity for non-standard sized parity data sets
US10896002B2 (en) 2018-06-29 2021-01-19 Seagate Technology Llc Reverse directory structure in a garbage collection unit (GCU)
US20200183622A1 (en) * 2018-12-07 2020-06-11 Micron Technology, Inc. Memory circuit package with adjustable active channel count
KR102740370B1 (ko) * 2019-03-28 2024-12-06 에스케이하이닉스 주식회사 메모리 시스템, 메모리 컨트롤러 및 그 동작 방법
US10956049B2 (en) * 2019-06-12 2021-03-23 International Business Machines Corporation Wear-aware block mode conversion in non-volatile memory
US11294820B2 (en) * 2019-06-28 2022-04-05 Micron Technology, Inc. Management of programming mode transitions to accommodate a constant size of data transfer between a host system and a memory sub-system
US11243711B2 (en) 2020-02-05 2022-02-08 Micron Technology, Inc. Controlling firmware storage density based on temperature detection
US11403228B2 (en) * 2020-02-18 2022-08-02 Micron Technology, Inc. Memory device page program sequence
US11275687B2 (en) 2020-07-07 2022-03-15 Micron Technology, Inc. Memory cache management based on storage capacity for parallel independent threads
US11783893B2 (en) * 2020-12-23 2023-10-10 Intel Corporation Utilizing NAND buffer for DRAM-less multilevel cell programming

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200504507A (en) * 2003-04-29 2005-02-01 Ibm Method, system and computer program product for implementing copy-on-write of a file
WO2005041044A1 (en) * 2003-09-24 2005-05-06 Seagate Technology Llc Multi-level caching in data storage devices
WO2012058383A1 (en) * 2010-10-27 2012-05-03 Seagate Technology Llc Causing related data to be written together to non-volatile, solid state memory
WO2013022915A1 (en) * 2011-08-09 2013-02-14 Lsi Corporation I/o device and computing host interoperation
TW201510723A (zh) * 2009-09-03 2015-03-16 Pioneer Chip Technology Ltd 以頁面為基礎管理快閃儲存裝置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7210001B2 (en) 1999-03-03 2007-04-24 Adaptec, Inc. Methods of and apparatus for efficient buffer cache utilization
KR100389867B1 (ko) 2001-06-04 2003-07-04 삼성전자주식회사 플래시 메모리 관리방법
US7549021B2 (en) 2006-02-22 2009-06-16 Seagate Technology Llc Enhanced data integrity using parallel volatile and non-volatile transfer buffers
US7499320B2 (en) * 2007-03-07 2009-03-03 Sandisk Corporation Non-volatile memory with cache page copy
ITMI20071012A1 (it) 2007-05-18 2008-11-19 St Microelectronics Srl Dispositivo di memoria migliorato a veloce programmazione
WO2008150927A2 (en) * 2007-05-30 2008-12-11 Schooner Information Technology System including a fine-grained memory and a less-fine-grained memory
US9201790B2 (en) 2007-10-09 2015-12-01 Seagate Technology Llc System and method of matching data rates
US7984259B1 (en) 2007-12-17 2011-07-19 Netapp, Inc. Reducing load imbalance in a storage system
US8180954B2 (en) 2008-04-15 2012-05-15 SMART Storage Systems, Inc. Flash management using logical page size
US8239724B2 (en) 2009-04-08 2012-08-07 Google Inc. Error correction for a data storage device
KR101619249B1 (ko) 2009-11-26 2016-05-11 삼성전자주식회사 프로그램 방법
US8301836B2 (en) 2010-02-26 2012-10-30 Red Hat, Inc. Methods for determining alias offset of a cache memory
US8677055B2 (en) 2010-04-12 2014-03-18 Sandisk Enterprises IP LLC Flexible way of specifying storage attributes in a flash memory-based object store
EP2702491A4 (en) * 2011-04-26 2015-02-25 Lsi Corp VARIABLE OVERSIZING FOR NON-VOLATILE STORAGE
US9323659B2 (en) 2011-08-12 2016-04-26 Sandisk Enterprise Ip Llc Cache management including solid state device virtualization
CN102541757B (zh) * 2011-11-30 2014-11-05 华为技术有限公司 写缓存方法、缓存同步方法和装置
US8724389B2 (en) 2012-07-26 2014-05-13 Ocz Storage Solutions, Inc. Non-volatile solid state memory-based mass storage device and methods thereof
US9104413B2 (en) * 2012-11-05 2015-08-11 Qualcomm Incorporated System and method for dynamic memory power management
US8526234B1 (en) * 2012-11-16 2013-09-03 Avalanche Technology, Inc. Controller management of memory array of storage device using magnetic random access memory (MRAM)
US9910747B2 (en) 2014-09-12 2018-03-06 International Business Machines Corporation Parallel mirrored copying with write consistency
CN105512048B (zh) * 2014-10-16 2018-11-09 瑞昱半导体股份有限公司 数据配置方法与装置
JP5804584B1 (ja) * 2014-10-30 2015-11-04 ウィンボンド エレクトロニクス コーポレーション Ｎａｎｄ型フラッシュメモリのプログラム方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200504507A (en) * 2003-04-29 2005-02-01 Ibm Method, system and computer program product for implementing copy-on-write of a file
WO2005041044A1 (en) * 2003-09-24 2005-05-06 Seagate Technology Llc Multi-level caching in data storage devices
TW201510723A (zh) * 2009-09-03 2015-03-16 Pioneer Chip Technology Ltd 以頁面為基礎管理快閃儲存裝置
WO2012058383A1 (en) * 2010-10-27 2012-05-03 Seagate Technology Llc Causing related data to be written together to non-volatile, solid state memory
WO2013022915A1 (en) * 2011-08-09 2013-02-14 Lsi Corporation I/o device and computing host interoperation

Also Published As

Publication number Publication date
US9905294B1 (en) 2018-02-27
CN108806754B (zh) 2022-04-05
JP2018190483A (ja) 2018-11-29
CN108806754A (zh) 2018-11-13
TW201907401A (zh) 2019-02-16
KR20180122565A (ko) 2018-11-13

Similar Documents

Publication Publication Date Title
CN108806754B (zh) 用于管理存储设备中的数据的方法和装置
US10712977B2 (en) Storage device writing data on the basis of stream
US10229049B2 (en) Storage system that performs host-initiated garbage collection
CN114365097A (zh) 受管理存储器系统中的写入缓冲器控制
CN108121673A (zh) 控制器以及包括控制器和非易失性存储器件的存储设备
US11262939B2 (en) Memory system, memory controller, and operation method
CN111352854B (zh) 存储装置、控制器及操作存储装置的方法
KR20200133716A (ko) 저장 캐시 관리
KR20210086990A (ko) 패리티를 사용한 메모리 액세스 병렬성 증가
US11163494B2 (en) Memory system, memory controller and operating method
KR20160050394A (ko) 메모리 시스템 및 상기 메모리 시스템의 동작 방법
CN117612589A (zh) 非易失性存储器装置中的部分块处理
US8995183B2 (en) Data retention in nonvolatile memory with multiple data storage formats
KR20210017181A (ko) 메모리 시스템, 메모리 컨트롤러 및 동작 방법
US11709610B2 (en) Memory system, memory controller and operating method
US12204764B2 (en) Memory system including memory die dedicated for metadata and operating method thereof
US11544002B2 (en) Memory system, memory controller and operating method thereof
KR102716788B1 (ko) 메모리 시스템, 메모리 장치 및 메모리 컨트롤러
US11893255B2 (en) Memory system for managing data corresponding to a plurality of zones and operating method thereof
KR102952028B1 (ko) 메모리 시스템 및 메모리 시스템의 동작 방법
US20250335125A1 (en) Memory controller, memory system and operating method
CN112445726B (zh) 存储器系统、存储器控制器及操作方法
US11474726B2 (en) Memory system, memory controller, and operation method thereof
KR20210051644A (ko) 메모리 시스템, 메모리 컨트롤러 및 동작 방법
US11640336B2 (en) Fast cache with intelligent copyback

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees