TWI686266B - Dresser with porous structure - Google Patents
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Abstract
本發明關於一種具有多孔隙結構之修整器,包括一底部基座以及一研磨層,該底部基座具有一位於該底部基座一側的修整面以及一形成於該底部基座內且貫穿該修整面的多孔隙結構可供一流體於該多孔隙結構間流動,故本發明之修整器在使用時將不再囿於運輸流體的管道的設置而在使用上更具彈性。The invention relates to a dresser with a porous structure, which includes a bottom base and an abrasive layer, the bottom base has a dressing surface on one side of the bottom base, and a forming surface formed in the bottom base and penetrating the bottom base The porous structure of the trimming surface can allow a fluid to flow between the porous structures. Therefore, the trimmer of the present invention will no longer be confined to the arrangement of the pipeline for transporting fluid when used, but will be more flexible in use.
Description
本發明有關一種修整器,尤指一種用於化學機械平坦化製程的具有多孔隙結構的修整器。The invention relates to a dresser, in particular to a dresser with a porous structure used in a chemical mechanical planarization process.
化學機械平坦化製程因為可以使工件達到大面積平坦化的目的,為目前半導體製程中常見的晶圓平坦化技術之一。在此過程中會利用研磨墊接觸晶圓,並且搭配使用研磨液來移除晶圓表面的雜質或不平坦結構,亦可稱為一種拋光的過程。The chemical mechanical planarization process is one of the common wafer planarization technologies in the current semiconductor manufacturing process because it can achieve the goal of large-scale planarization of the workpiece. In this process, the polishing pad is used to contact the wafer, and the polishing liquid is used to remove impurities or uneven structures on the surface of the wafer, which can also be called a polishing process.
但研磨墊使用一段時間後,研磨過程中累積的研磨屑會殘留在研磨墊的表面,使得研磨效果不佳。故習知技術會利用修整器對研磨墊的表面進行修整,使研磨墊的表面再度粗糙而得以對包括晶圓在內的工件進行研磨。However, after using the polishing pad for a period of time, the abrasive debris accumulated during the polishing process will remain on the surface of the polishing pad, making the polishing effect poor. Therefore, the conventional technology uses a dresser to dress the surface of the polishing pad, so that the surface of the polishing pad is roughened again, and the workpiece including the wafer can be polished.
習知技術中,如韓國專利公開號KR20000019355教示一種修整器以及進行修整的方法,避免在研磨過程中讓晶片產生刮痕。該修整器包括具有研磨墊的研磨台、用來對研磨墊供應研磨液的供應單元、用來研磨晶圓的研磨頭、用來修整研磨墊的修整器、以及形成在研磨台一側,用來放置修整器的修整器停放槽,在修整器停放槽中更包括去離子水供應管路以及化學品供應管路,透過該管路可對該研磨墊的表面供液。又如美國專利公告號US5876508教示一種在完成化學機械研磨後清潔漿液殘餘物的方法,係在製備清洗劑後,再將清潔劑引導到形成於修整器的噴嘴,使用清潔劑可被噴射到研磨墊上,進而達到清潔研磨墊的效果。In the conventional technology, for example, Korean Patent Publication No. KR20000019355 teaches a dresser and a method of dressing to avoid scratches on the wafer during the grinding process. The dresser includes a polishing table having a polishing pad, a supply unit for supplying a polishing liquid to the polishing pad, a polishing head for polishing a wafer, a dresser for dressing the polishing pad, and a dresser formed on the side of the polishing table The dresser parking slot for placing the dresser includes a deionized water supply line and a chemical supply line, through which liquid can be supplied to the surface of the polishing pad. Another example is U.S. Patent Publication No. US5876508, which teaches a method of cleaning slurry residue after completing chemical mechanical grinding. After preparing the cleaning agent, the cleaning agent is then directed to the nozzle formed in the dresser, and the cleaning agent can be sprayed to the grinding On the pad, to achieve the effect of cleaning the polishing pad.
綜觀目前修整器相關的產品,主要材質為不銹鋼材料或金屬材料,供液的方式為直接對研磨墊表面供液、由修整器的治具供液、由修整器的外環供液、由修整器中心製造出一孔洞並經該孔洞供液四種。惟上述四種方法都需要額外設置供液裝置或流體通道,且流體的分布性也不佳。Looking at the products of the current dresser, the main material is stainless steel or metal material. The liquid supply method is to directly supply liquid to the surface of the polishing pad, to supply liquid from the tool of the dresser, to supply liquid from the outer ring of the dresser, and from dressing A hole is made in the center of the device and four kinds of liquid are supplied through the hole. However, the above four methods all require additional liquid supply devices or fluid channels, and the fluid distribution is not good.
諸如上述議題,本發明之申請人曾提供一種具內部供給流體結構之砂輪,請參考中華民國專利公告號I577505,該砂輪安裝在具有供液孔的驅動軸上,包括透水層、多孔隙輪體、多孔隙研磨層、第一不透水層以及第二不透水層。因此,當液體由驅動軸的供液孔導入後,將會藉由離心力經由透水層、多孔隙輪體至多孔隙研磨層,有效地改善流體的分布性。但該前案係砂輪之應用,目前對於修整器得額外設置供液裝置或流體通道以及流體的分布性不佳的問題仍未有較佳的改善方式可改善。For issues such as the above, the applicant of the present invention has provided a grinding wheel with an internal fluid supply structure. Please refer to Republic of China Patent Publication No. I577505. The grinding wheel is installed on a drive shaft with a liquid supply hole, including a permeable layer and a porous wheel body , Porous grinding layer, first water-impermeable layer and second water-impermeable layer. Therefore, when the liquid is introduced through the liquid supply hole of the drive shaft, it will be centrifugal force through the water-permeable layer, the porous wheel body to the porous grinding layer, effectively improving the fluid distribution. However, the previous case is the application of grinding wheels. At present, there is still no better way to improve the problem that the dresser must be additionally provided with a liquid supply device or a fluid channel and the distribution of the fluid is not good.
本發明的目的之一在於解決習知化學機械平坦化製程中,因為得仰賴額外設置供給液體之管路來供應液體、或設置讓氣體通過之氣體通道,故修整器為了配合管路設置而讓修整器的使用受到限制的缺點。One of the objects of the present invention is to solve the conventional chemical mechanical planarization process, because it has to rely on the additional provision of liquid supply pipelines to supply liquids, or to provide gas passages for gas to pass, so the dresser is designed to match the pipeline settings. Disadvantages of limited use of dressers.
本發明的另一目的是為了在化學機械平坦化製程中改善流體的分布性。Another object of the present invention is to improve fluid distribution in a chemical mechanical planarization process.
為了達到上述目的,在本發明一實施例中提供一種具有多孔隙結構之修整器,該具有多孔隙結構之修整器包括:一底部基座,該底部基座具有一位於該底部基座一側的修整面以及一形成於該底部基座內且貫穿該修整面的多孔隙結構;以及一形成於該修整面之研磨層。In order to achieve the above object, in one embodiment of the present invention, a dresser having a porous structure is provided. The dresser having a porous structure includes: a bottom base having a side located on the side of the bottom base A trimming surface and a porous structure formed in the bottom base and penetrating the trimming surface; and an abrasive layer formed on the trimming surface.
本發明一實施例中,該底部基座之一孔隙率介於5%至80%之間。In an embodiment of the invention, one of the bottom bases has a porosity between 5% and 80%.
本發明一實施例中,該底部基座的孔徑介於100 nm至50 mm之間。In an embodiment of the invention, the pore size of the bottom base is between 100 nm and 50 mm.
本發明一實施例中,該流體係為一液體、一氣體、或其組合。In an embodiment of the invention, the flow system is a liquid, a gas, or a combination thereof.
本發明一實施例中,該底部基座之材質係為一陶瓷材料。In an embodiment of the invention, the material of the bottom base is a ceramic material.
本發明一實施例中,該底部基座之材質係包括至少一錳、鐵、銅、鈷、鉻、矽、鎂、或鋁之氧化物。In an embodiment of the invention, the material of the bottom base includes at least one oxide of manganese, iron, copper, cobalt, chromium, silicon, magnesium, or aluminum.
本發明一實施例中,該研磨層包括一結合層以及複數個設置於該結合層之研磨顆粒。In an embodiment of the invention, the abrasive layer includes a bonding layer and a plurality of abrasive particles disposed on the bonding layer.
本發明一實施例中,該研磨層包括複數個貫孔以及介於該些貫孔之間的複數個研磨壁。In an embodiment of the invention, the polishing layer includes a plurality of through holes and a plurality of polishing walls interposed between the through holes.
本發明一實施例中,該結合層係一金屬材料、一硬焊材料、一樹脂材料、或一陶瓷材料。In an embodiment of the invention, the bonding layer is a metal material, a brazing material, a resin material, or a ceramic material.
本發明一實施例中,該些研磨顆粒係鑽石、氧化鋁、碳化矽、立方氮化硼、或其組合。In an embodiment of the invention, the abrasive particles are diamond, alumina, silicon carbide, cubic boron nitride, or a combination thereof.
本發明一實施例中,該研磨層為利用化學氣相沉積法所形成之一鑽石鍍膜,且該鑽石鍍膜具有複數個研磨凸起。In an embodiment of the invention, the polishing layer is a diamond coating formed by chemical vapor deposition, and the diamond coating has a plurality of polishing protrusions.
本發明一實施例中,該底部基座與該研磨層之間更夾設至少一子基板。In an embodiment of the invention, at least one sub-substrate is further interposed between the bottom base and the polishing layer.
本發明一實施例中,該研磨層係設置於該子基板上遠離該底部基座之一側。In an embodiment of the invention, the polishing layer is disposed on a side of the sub-substrate away from the bottom base.
本發明一實施例中,該底部基座與該子基板之間更夾設一黏著層。In an embodiment of the invention, an adhesive layer is further interposed between the bottom base and the sub-substrate.
本發明一實施例中,該黏著層為一樹脂材料,於一較佳實施例中,該樹脂材料可為環氧樹脂、酚醛樹脂、壓克力樹脂、或其類似物。In one embodiment of the present invention, the adhesive layer is a resin material. In a preferred embodiment, the resin material may be epoxy resin, phenol resin, acrylic resin, or the like.
本發明一實施例中,該子基板具有複數個子基板凸起,該些子基板凸起沿著該子基板之一中心朝徑向延伸。In an embodiment of the invention, the sub-substrate has a plurality of sub-substrate protrusions, and the sub-substrate protrusions extend radially along a center of the sub-substrate.
是以,本發明相較於習知技術所能達到的功效在於:Therefore, the effects achieved by the present invention compared to the conventional technology are:
目前修整器相關的產品主要材質多為不銹鋼材料或金屬材料,需要額外設置供液裝置或流體通道,且流體的分布性也不佳;即便如美國專利公開號US20130344779所揭示的用於軟墊修整的修整器,其基板及研磨尖端的材質非習知不銹鋼材料或金屬材料,而是碳化物材料、陶瓷材料、或複合陶瓷材料,但也未給出令此類基板具多孔隙結構以供流體於其中流通的技術教示。反觀本發明之修整器具有多孔隙結構,在使用時,該些多孔隙結構可作為研磨液、冷卻水等液體的通道,而不需如習知修整器得仰賴額外設置的管路來持續提供液體,使修整器的使用不再受到管路限制而更具彈性。At present, the main materials of the products related to the trimmer are mostly stainless steel materials or metal materials, and additional liquid supply devices or fluid channels are required, and the distribution of the fluid is not good; even as used in the cushion trimming as disclosed in US Patent Publication No. US20130344779 The material of the substrate and grinding tip of the substrate is not a conventional stainless steel material or metal material, but a carbide material, a ceramic material, or a composite ceramic material. However, it is not given that such a substrate has a porous structure for fluid The technical instruction circulating in it. In contrast, the dresser of the present invention has a porous structure. When in use, these porous structures can be used as channels for liquids such as grinding fluid, cooling water, etc., without the need to rely on additional piping to provide continuous The liquid makes the use of the dresser no longer restricted by the pipeline and more flexible.
本發明之修整器可藉由多孔隙結構來供給氣體,使得輔助工件得以藉由氣體的供給與否而與該修整器結合或分離,更可藉由供給氣體以清除該修整器的表面積屑,提升該修整器的排屑功能。The dresser of the present invention can supply gas through the porous structure, so that the auxiliary workpiece can be combined with or separated from the dresser by the supply of gas or not, and the surface scraps of the dresser can be removed by supplying gas. Improve the chip removal function of the dresser.
有關本發明的詳細說明及技術內容,現就配合圖式說明如下:The detailed description and technical content of the present invention are described below in conjunction with the drawings:
第一實施例First embodiment
『圖1』為本發明第一實施例的具有多孔隙結構之修整器示意圖,為一主要包括一底部基座10以及一研磨層20的標準型化學機械研磨墊修整器(即,標準型鑽石碟)。"Figure 1" is a schematic diagram of a dresser with a porous structure according to a first embodiment of the present invention, which is a standard chemical mechanical polishing pad dresser (ie, standard diamond) mainly including a
本實施例中 ,該底部基座10之一側為修整面11,且該底部基座10具有一形成於該底部基座10內且貫穿該修整面11的多孔隙結構12a。In this embodiment, one side of the
本實施例中,該底部基座10之材質可為一陶瓷材料。且於一較佳實施例中,該底部基座10係包括至少一選自由錳、鐵、銅、鈷、鉻、矽、鎂、或鋁之氧化物之陶瓷材料,譬如可包括Fe
xO
y、Mn
xO
y、SiO
2、CaCO
3及/或MgCO
3之陶瓷材料,經燒製後即可產生該多孔隙結構12a。為了確保如液體及/或氣體之流體得以在該多孔隙結構間流動,本實施例中該底部基座10之一孔隙率可介於5%至80%之間、較佳為30%至50%之間;如以孔徑定義,本實施例中該底部基座10的孔徑可介於100 nm至50 mm之間、較佳為5 mm至20 mm之間。
In this embodiment, the material of the
該研磨層20則形成於該底部基座10之該修整面11,本實施例中,該研磨層20亦具有一多孔隙結構12b,而形成該研磨層20的材料與形成該底部基座10的材料可彼此相同或者不同,具體而言,本實施例之該研磨層20包括一結合層24及複數個散布在該結合層24中的研磨顆粒23,該結合層24之材質可為硬焊材料、金屬燒結材料、金屬電鍍材料、陶瓷材料、或樹脂材料,當選擇陶瓷材料作為該結合層24時,則該結合層24與形成該底部基座10的材料就可相同;若選擇如硬焊材料、金屬燒結材料、金屬電鍍材料、或樹脂材料作為該結合層24時,則該結合層24與形成該底部基座10的材料就不同。該研磨層20包括一結合層24以及複數個設置於該結合層24之研磨顆粒23,且該些研磨顆粒23係部分地露出該結合層24以提供研磨效果。The
由於該研磨層20需藉由硬焊或燒結等硬化方式使得該研磨層20固定地結合在該底部基座10上,故於本實施例中,該結合層24可視需求任意由一金屬材料、一硬焊材料、一樹脂材料、或一陶瓷材料之中加以選擇;而該研磨顆粒23可選自鑽石、氧化鋁、碳化矽、立方氮化硼、或其組合,本發明對此並無特別限制。Since the
第二實施例Second embodiment
本發明第二實施例的具有多孔隙結構之修整器,請參考『圖2A』至圖『圖2C』,為一蜂巢型化學機械研磨墊修整器(即,蜂巢型鑽石碟)。For a dresser having a porous structure according to the second embodiment of the present invention, please refer to "Figure 2A" to "Figure 2C", which is a honeycomb type chemical mechanical polishing pad dresser (ie, a honeycomb type diamond disc).
其中,『圖2A』為本實施例的修整器示意圖;『圖2B』為『圖2A』的研磨層20的放大示意圖;『圖2C』又為『圖2B』的放大示意圖。Among them, "Figure 2A" is a schematic diagram of a dresser of this embodiment; "Figure 2B" is an enlarged schematic diagram of the
與第一實施例相似,本實施例的修整器主要也包括該底部基座10以及該研磨層20,且該底部基座10與前述之第一實施例同樣地具有貫穿該修整面11的該多孔隙結構12,在此不另外贅述,惟不同點在於該研磨層20的結構。Similar to the first embodiment, the dresser of this embodiment mainly includes the
本實施例中,該研磨層20包括複數個貫孔21以及介於該些貫孔21之間的複數個研磨壁22,該些貫孔21彼此相互緊密規則排列,而每一該研磨壁22則介於該些貫孔21之間。該研磨壁22可包括一結合層24以及複數個研磨顆粒23,該些研磨顆粒23亦部分地露出該結合層24,為了獲得上述結構,製作時可選擇先形成包括有該結合層24的結構體後,再於該結合層24上設置該些研磨顆粒23而獲得該研磨壁22;或直接將形成該結合層24之材料與該研磨顆粒23混合後,再形成為該研磨壁22。該研磨壁22可為單層結構,但也可以為多層結構,使用時可以依需求調整而沒有特別限制。此外,由於研磨層20的該些貫孔21即可被作為供給液體或氣體的通道,因此,本實施例中的研磨層20可以任意選用為多孔隙結構或非多孔隙結構。In this embodiment, the
在此進一步提供各種含有貫孔21的研磨層20之製造方法以資說明,請搭配參考『圖2D』至『圖2F』。其中,『圖2D』的研磨層20具有雙層結構;『圖2E』的研磨層20具有三層結構;『圖2F』的研磨層20具有單層結構。Here, various manufacturing methods of the
於一實施例中,可取一鋁材質的蜂巢網,且該蜂巢網的孔洞間具有一載體牆221。在該載體牆221上經電鍍或其他適當方式形成一結合層24後,使該些研磨顆粒23透過該結合層24固定於該載體牆221並露出而作為該研磨壁22,此時,該研磨層20可為具有「該研磨壁22(含有該研磨顆粒23之該結合層24)/該載體牆221」之雙層或「該研磨壁22(含有該研磨顆粒23之該結合層24)/該載體牆221/該研磨壁22(含有該研磨顆粒23之該結合層24)」之三層結構,且該結合層24之材質可與鋁材質之該載體牆221彼此相同或不同;或者,可將一膠層設置於一作為暫時基板之鈦基板上,該膠層可為一具有貫孔之膠層,再利用一電鍍方式將一電鍍層形成於膠層內的模孔,並使該電鍍層作為該結合層24,部分地覆蓋預先佈設於該膠層之內的該些研磨顆粒23,並於完成後移除該膠層及該作為暫時基板之鈦基板以直接地由該電鍍層構成該貫孔(圖未示)及該研磨壁22而形成為該研磨層20,此時,該研磨層20為僅包括該研磨壁22的單層結構;又或者,先提供一具有複數個規則排列的正六邊形狹縫的模板,將一固定材料與該研磨顆粒23形成於該多邊形狹縫之中,如此一來,當移除該模板後,該固定材料即形成該結合層24,且該結合層24之兩側上均附著有該研磨顆粒23而作為該研磨壁22,此時,該研磨層20為僅包括該研磨壁22的單層結構。In one embodiment, a honeycomb net made of aluminum can be used, and a
附帶一提的是,本實施例係以一規則排列的正六邊形蜂巢狀結構作為舉例說明,然除了上述的正六邊形蜂巢狀結構外,該貫孔21的橫截面亦依需求而可選擇為一三邊形、一四邊形、一五邊形、一圓形、一橢圓形、或為上述形狀之任意組合。Incidentally, in this embodiment, a regular hexagonal honeycomb structure is taken as an example. However, in addition to the regular hexagonal honeycomb structure described above, the cross section of the through
第三實施例Third embodiment
本發明第三實施例為一種組合式的化學機械研磨墊修整器,與第一實施例、第二實施例相似,本實施例的修整器主要也包括該底部基座10以及該研磨層20,且該底部基座10與前述之第一實施例同樣地具有貫穿該修整面11的該多孔隙結構12,在此不另外贅述,惟不同點在於該研磨層20的結構。The third embodiment of the present invention is a combined chemical mechanical polishing pad dresser. Similar to the first and second embodiments, the dresser of this embodiment mainly includes the
請參考『圖3A』至『圖3E』,在第三實施例中該研磨層20與該底部基座10之間更包括一子基板40。本實施例中,該子基板40與該底部基座10之間可再藉由一黏著層30以使該子基板40牢固設置於該底部基座10上,該黏著層30可為一樹脂材料,譬如,環氧樹脂、酚醛樹脂、壓克力樹脂、或其類似物。Please refer to "Figure 3A" to "Figure 3E". In the third embodiment, a sub-substrate 40 is further included between the polishing
此外,由於子基板40係以如環狀、陣列等方式排列設置於底部基座10的部分區域(圖未示,稱之為「覆蓋區域」),而未覆蓋有子基板40的底部基座10(圖未示,稱之為「未覆蓋區域」)即可被作為供給液體或氣體的通道,或是供給液體或氣體的出口,因此,本實施例中的研磨層20或子基板40可以任意選用為多孔隙結構或非多孔隙結構。In addition, since the sub-substrate 40 is arranged and arranged in a partial area (not shown, referred to as a "covering area") of the
『圖3A』為第三實施例的第一種態樣,包括複數個子基板40,該研磨層20則設置於每一該子基板40上遠離該底部基座10之一側。該些子基板40可形成為一具有多孔隙結構(圖未示)、亦可形成為一非多孔隙結構(圖未示),且當該些子基板40具有多孔隙結構時,該些子基板40材質可與該底部基座10之材質相同,即,該些子基板40及該底部基座10均為一陶瓷材料;然而,在其他實施例中,該些子基板40材質可與該底部基座10之材質不同,例如,該子基板40為一不銹鋼材料、而該底部基座10為一陶瓷材料。"FIG. 3A" is the first aspect of the third embodiment, which includes a plurality of
本實施例中,該些子基板40可為形狀為四邊形的平面基板,並以矩陣方式排列於該底部基座10上;但在其他態樣中,譬如『圖3B』,亦可為圓形平面基板,該些子基板40圍成圓形並排列於該底部基座10上,且可進一步在該些子基板40與該底部基座10間形成該黏著層(圖未示)以強化該些子基板40與該底部基座10的結合;在其他實施例中,該些子基板40的形狀也可為諸如三角形、五邊形等多邊形,排列方式也可依需求調整,本發明對此並無特別限制。In this embodiment, the sub-substrates 40 may be quadrilateral planar substrates, which are arranged on the
該研磨層20係形成於該些子基板40上,且該研磨層20的形成方法並無特別限制。舉例來說,可利用化學氣相沉積法在該些子基板40上形成具有複數個研磨凸起25的鑽石鍍膜作為該研磨層20;或者亦可先將研磨顆粒23排列設置在該些子基板40之後再透過硬焊結合於該底部基座10。The
『圖3C』、『圖3D』、及『圖3E』為本實施例的另一態樣,本態樣係透過該黏著層30以將一子基板40牢固設置於該底部基座10上,該子基板40為一非平面基板。詳言之,該子基板40可具有一中心區40a以及環繞該中心區40a的外環區40b,且在該外環區40b具有複數個子基板凸起41,該些子基板凸起41沿著該子基板40之一中心朝徑向延伸並具有一弧度,並在兩個子基板凸起41之間形成一排屑通道。與前述的其他態樣相同,該子基板40可為一非多孔隙結構12之基板,如『圖3D』;亦可為一具有多孔隙結構12之基板,如『圖3E』。因此,當利用化學氣相沉積法在該些子基板40上形成鑽石鍍膜時,該鑽石鍍膜將順應該些子基板凸起41而形成複數個研磨凸起25而作為該研磨層20。"FIG. 3C", "FIG. 3D", and "FIG. 3E" are another aspect of this embodiment. This aspect uses the
特別說明的是,本發明可設計僅在該子基板40的底部具有該黏著層30,而未覆蓋該子基板40的區域就不需要有該黏著層30,使流體得以貫穿該底部基座10的該多孔隙結構12而達到該修整面11而不受阻礙,達到均勻地分布於該修整器中的目的。In particular, the invention can be designed to have the
本發明以第一實施例至第三實施例為例,說明該具有多孔隙結構之底部基座10在各種不同規格的修整器的應用。因為該底部基座10都具有該多孔隙結構12的緣故,在進行修整的過程中,包括研磨液、冷卻水在內的液體可藉由該些多孔隙結構作為通道,均勻地分布於該修整器中,毋須如習知修整器得仰賴額外設置的管路來持續提供液體,在使用時更具有彈性,也有利產業應用。The present invention takes the first embodiment to the third embodiment as examples to illustrate the application of the
再者,當本發明之修整器在使用時進一步在該底部基板10連接一可對該修整器進行吸氣或吹氣作用的裝置時,因為該修整器的該底部基座10具有該多孔隙結構12的緣故,氣體可流暢地在其中通行,不僅可以簡單快速地達到吸附或分離工件的效果,在吹氣時更有利於該修整器進行排屑。Furthermore, when the dresser of the present invention is further used to connect a device capable of inhaling or blowing the dresser to the
以上已將本發明做一詳細說明,惟以上所述者,僅爲本發明的一較佳實施例而已,當不能限定本發明實施的範圍。即凡依本發明申請範圍所作的均等變化與修飾等,皆應仍屬本發明的專利涵蓋範圍內。The present invention has been described in detail above, but the above is only a preferred embodiment of the present invention, which should not limit the scope of the present invention. That is, all changes and modifications made within the scope of the application of the present invention should still fall within the scope of the patent of the present invention.
10 底部基座 11 修整面 12、12a、12b 多孔隙結構 20 研磨層 21 貫孔 22 研磨壁 23 研磨顆粒 24 結合層 25 研磨凸起 30 黏著層 40 子基板 40a 中心區 40b 外環區 41 子基板凸起 A-A 剖面線The
『圖1』為本發明第一實施例的具有多孔隙結構之修整器示意圖。 『圖2A』為本發明第二實施例的具有多孔隙結構之修整器示意圖。 『圖2B』為『圖2A』的研磨層放大示意圖。 『圖2C』為『圖2B』的放大示意圖。 『圖2D』為本發明一實施例中『圖2C』的部份放大示意圖,其研磨層具有雙層結構。 『圖2E』為本發明另一實施例中『圖2C』的部份放大示意圖,其研磨層具有三層結構。 『圖2F』為本發明又一實施例中『圖2C』的部份放大示意圖,其研磨層具有單層結構。 『圖3A』為本發明第三實施例的一態樣中,具有多孔隙結構之修整器剖示圖。 『圖3B』為本發明第三實施例的另一態樣中,具有多孔隙結構之修整器剖示圖。 『圖3C』為本發明第三實施例的又一態樣中,具有多孔隙結構之修整器示意圖。 『圖3D』為『圖3C』一實施態樣的A-A剖面線示意圖。 『圖3E』為『圖3C』另一實施態樣的A-A剖面線示意圖。"Figure 1" is a schematic diagram of a dresser having a porous structure according to a first embodiment of the present invention. "Figure 2A" is a schematic diagram of a dresser having a porous structure according to a second embodiment of the present invention. "Figure 2B" is an enlarged schematic view of the abrasive layer of "Figure 2A". "Figure 2C" is an enlarged schematic view of "Figure 2B". [FIG. 2D] is a partially enlarged schematic view of [FIG. 2C] in an embodiment of the present invention, and the polishing layer has a double-layer structure. [FIG. 2E] is a partially enlarged schematic view of [FIG. 2C] in another embodiment of the present invention, and the polishing layer has a three-layer structure. [FIG. 2F] is a partially enlarged schematic view of [FIG. 2C] in another embodiment of the present invention, and the polishing layer has a single-layer structure. "Figure 3A" is a cross-sectional view of a trimmer having a porous structure in an aspect of the third embodiment of the present invention. "Figure 3B" is a cross-sectional view of a dresser having a porous structure in another aspect of the third embodiment of the present invention. "Figure 3C" is a schematic diagram of a dresser having a porous structure in another aspect of the third embodiment of the present invention. "Figure 3D" is a schematic diagram of the A-A cross-sectional view of an implementation form of "Figure 3C". [FIG. 3E] is a schematic diagram of A-A cross-sectional view of another embodiment of [FIG. 3C].
10 底部基座 11 修整面 12a、12b 多孔隙結構 20 研磨層 23 研磨顆粒 24 結合層10
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CN106041741A (en) * | 2016-06-21 | 2016-10-26 | 大连理工大学 | CMP polishing pad finisher with porous structure |
TW201714709A (en) * | 2015-10-22 | 2017-05-01 | Kinik Co | Grinding disc having internal fluid supply structure to effectively slow down the deformation of the grinding surface to reduce the number of dressing |
TW201811483A (en) * | 2016-09-06 | 2018-04-01 | 日商迪思科股份有限公司 | Chuck table and method of manufacturing suction plate of porous ceramics |
TWI621503B (en) * | 2017-05-12 | 2018-04-21 | Kinik Company Ltd. | Chemical mechanical abrasive polishing pad conditioner and manufacturing method thereof |
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TW201714709A (en) * | 2015-10-22 | 2017-05-01 | Kinik Co | Grinding disc having internal fluid supply structure to effectively slow down the deformation of the grinding surface to reduce the number of dressing |
CN106041741A (en) * | 2016-06-21 | 2016-10-26 | 大连理工大学 | CMP polishing pad finisher with porous structure |
TW201811483A (en) * | 2016-09-06 | 2018-04-01 | 日商迪思科股份有限公司 | Chuck table and method of manufacturing suction plate of porous ceramics |
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