JP2017196725A - Wrapping polishing surface plate and device using the same - Google Patents

Wrapping polishing surface plate and device using the same Download PDF

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JP2017196725A
JP2017196725A JP2016100902A JP2016100902A JP2017196725A JP 2017196725 A JP2017196725 A JP 2017196725A JP 2016100902 A JP2016100902 A JP 2016100902A JP 2016100902 A JP2016100902 A JP 2016100902A JP 2017196725 A JP2017196725 A JP 2017196725A
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polishing
surface plate
abrasive grains
polished
pores
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高田 篤
Atsushi Takada
篤 高田
幸三 石崎
Kozo Ishizaki
幸三 石崎
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Nano TEM Co Ltd
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a wrapping polishing surface plate and a polishing device that are capable of reducing affected layers and improving processing efficiency by cooling and cleaning the polished surface of a polished material and the polishing surface plate.SOLUTION: In the polishing surface plate and the polishing device that polish a wrapping by using a polishing liquid including grinding abrasive grains, the polishing surface plate is characterized in that metal particles 101 are connected by sintering or the like, or connected under the presence of a resin connection agent 103, and formed as a porous body having pores 102 communicated from a surface plate back surface to a polished surface, and the polishing device is characterized in that flowing-out of a gas, a cooling agent or cleaning water through the pores 102, surface pressure between the polished material and the polishing surface plate, a polishing speed, and roughness of the polished surface are controlled.SELECTED DRAWING: Figure 2

Description

本発明は、シリコンウエハ等の電子部品、光学部品に用いられるセラミクス、ガラス、水晶、金属等の被研磨部品のラッピング研磨定盤およびその装置に関する。  The present invention relates to a lapping polishing surface plate for an object to be polished such as ceramics, glass, crystal, metal, etc. used for electronic parts such as silicon wafers and optical parts, and an apparatus therefor.

近年の電子部品に用いられるシリコンウエハや光学部品に用いられるガラス、金属等は、高い表面平滑性と共に、高い面精度が求められる。これらの材料の研磨においては、よく知られたパッド、フェルトのような軟質で弾力性のある研磨布等を用い、鏡面研磨が行われ、高い表面平滑性が得られている。しかし、研磨布を用いた鏡面研磨では、研磨速さが遅く、被研磨材の中央部分よりも周辺部の研磨量が多くなり、縁だれと呼ばれる問題が発生する。  Glass, metal, and the like used for silicon wafers and optical parts used in recent electronic parts are required to have high surface accuracy as well as high surface smoothness. In polishing these materials, mirror polishing is performed using a soft and elastic polishing cloth such as a well-known pad or felt, and high surface smoothness is obtained. However, in mirror polishing using a polishing cloth, the polishing speed is slow, the amount of polishing in the peripheral portion is larger than the central portion of the material to be polished, and a problem called edge fringing occurs.

一方、鋳鉄などの剛性の高い研磨プレートを用いた研磨によれば、上述した縁だれがおこりにくく高い表面(寸法)精度が得られる。しかしながら、前記研磨プレートを用いた研磨では、鏡面などの面粗度が充分に得られず、また、加工面に変質層が形成されやすくなるという問題も発生する。この方法では研磨速さを上げるために、スラリー中の砥粒の固定性を良くするために、表面にテクチュアリングを付けたり、有効定盤面積を下げるために、定盤を螺旋状に切ったり、同心円状に切り面積を下げたりしている。
これらの問題を解消する技術として、銅や錫などの軟質金属の微粉末を合成樹脂に分散させ且つ多孔体からなる研磨プレートを用いた研磨技術がある(特許文献1、特許文献2、特許文献3参照)。
On the other hand, according to the polishing using a polishing plate having high rigidity such as cast iron, the above-mentioned edging hardly occurs and high surface (dimension) accuracy can be obtained. However, in the polishing using the polishing plate, sufficient surface roughness such as a mirror surface cannot be obtained, and a problem that a deteriorated layer is easily formed on the processed surface also occurs. In this method, in order to increase the polishing speed, in order to improve the fixability of the abrasive grains in the slurry, in order to attach a technical ring to the surface or reduce the effective surface area, the surface plate is cut into a spiral shape. Or the area is cut concentrically.
As a technique for solving these problems, there is a polishing technique in which a fine powder of soft metal such as copper or tin is dispersed in a synthetic resin and a polishing plate made of a porous body is used (Patent Document 1, Patent Document 2, Patent Document). 3).

特開平3−060970号公報JP-A-3-060970 特開平8−025213号公報JP-A-8-025213 特開2005−88174号公報JP 2005-88174 A

しかし、特許文献1の場合には、銅又は錫の微粉末を分散させた連続気孔を有する熱硬化性樹脂の多孔体研磨定盤が提案され、特許文献2の場合には樹脂中に軟質金属を分散させ、さらに気孔形成剤を固体状態で研磨プレートに分散させ、研磨面に研磨液を流入させることにより該研磨プレート平面に独立した多数の気孔を形成する。特許文献3においては樹脂中に酸化セリウムを分散させて砥粒とし、特に遊離砥粒を含まない研磨剤にて研磨する。  However, in the case of Patent Document 1, a porous polishing surface plate of a thermosetting resin having continuous pores in which fine powder of copper or tin is dispersed is proposed. In the case of Patent Document 2, a soft metal is included in the resin. Are dispersed in the polishing plate in a solid state, and a polishing liquid is allowed to flow into the polishing surface to form a large number of independent pores on the polishing plate plane. In Patent Document 3, cerium oxide is dispersed in a resin to form abrasive grains, and polishing is performed with an abrasive that does not contain free abrasive grains.

特許文献1の場合には、研磨プレートを連通する気孔を有するため、研磨に伴う熱が効果的に放散され、研磨屑が気孔に捕捉されて目詰まり防止が期待されるが、研磨プレートが合成の高いバックアップ材に固着されたとしても、熱硬化樹脂自身の変形が大であることから、高い面精度が得られないという問題がある。特許文献2は、それらの課題を解決するものであるが、所望とする速い研磨速さが得にくいという問題があった。さらに特許文献3は、砥粒としての酸化セリウム微粒子を樹脂内に分散させるもので、一定の砥粒の供給が可能となるため、砥粒を含んだ研磨液を供給する方式より、結果的に速い研磨速さが得られる。しかし、ダイヤモンド砥粒と比較すると研磨速さの点では低下する。一方、いずれも樹脂をベースとしていることから、熱硬化樹脂の変形という問題は完全に解決しない。また、新たな研磨作業を行う時、気孔に詰まった研磨屑等を除去し、清掃を行うのにかなりの時間が必要となる。本発明は、これらの課題を解決するためになされたものである。  In the case of Patent Document 1, since there are pores communicating with the polishing plate, heat accompanying the polishing is effectively dissipated, and polishing debris is captured in the pores and expected to prevent clogging, but the polishing plate is synthesized. Even if it is fixed to a high backup material, there is a problem that high surface accuracy cannot be obtained because the thermosetting resin itself is largely deformed. Patent Document 2 solves these problems, but has a problem that it is difficult to obtain a desired high polishing speed. Further, Patent Document 3 disperses cerium oxide fine particles as abrasive grains in a resin, so that it is possible to supply a constant abrasive grain. As a result, a method of supplying a polishing liquid containing abrasive grains results in the following. Fast polishing speed can be obtained. However, compared with diamond abrasive grains, the polishing speed decreases. On the other hand, since both are based on resin, the problem of deformation of thermosetting resin is not completely solved. In addition, when a new polishing operation is performed, a considerable amount of time is required to remove polishing debris clogged in the pores and perform cleaning. The present invention has been made to solve these problems.

本発明は、このような従来の問題点を考慮してなされたものであり、研磨後密着したワークの取り外しを研磨定盤の背後から加圧することにより、容易に取り外せるし、また、定盤背後から洗浄液を排出することで清掃が簡単に行われ、容易に次の研摩に移ることが出る。また、本研摩盤はダイヤモンド砥粒を使用することができるので研磨能率は特許文献2の酸化セリウムを使用する場合より大きくすることが可能である。  The present invention has been made in consideration of such conventional problems, and can be easily removed by applying pressure from behind the polishing platen to remove the workpiece that has been in close contact with the polishing plate. The cleaning liquid is easily discharged from the nozzle so that the cleaning can be easily performed and the next polishing can be easily performed. In addition, since the polishing machine can use diamond abrasive grains, the polishing efficiency can be made larger than when cerium oxide of Patent Document 2 is used.

上述の目的を達成するため、本発明は、研削砥粒を含む研削液を用いてラッピング研磨する研磨定盤の構造において、鋭意検討の結果なされたものであり、その趣旨とするところは、特許請求の範囲に記載の通りの下記内容である。    In order to achieve the above-mentioned object, the present invention has been made as a result of intensive studies on the structure of a polishing surface plate for lapping polishing using a grinding liquid containing grinding abrasive grains. It is the following contents as described in the scope of claims.

(1) 研削砥粒を含む研磨液を用いてラッピング研磨する研磨定盤において、金属粒子を焼結等で連結し又は樹脂連結剤の存在下で連結し、且つ定盤背面から研摩面にかけて連通する気孔を持つ多孔体として形成することを特徴とする研磨定盤。
(2) 研磨砥粒の平均径は1μm以上であり、気孔平均径は0.5μm以上20μm以下であり、気孔平均径は研磨砥粒平均径の2/3以下であることを特徴とする(1)記載の研磨定盤。
(3) 研磨砥粒を含む研摩液を供給しながら研磨する際、研磨砥粒の一部が前記研磨定盤の気孔に捕捉され、被研削材に作用することを特徴とする(1)に記載の研磨定盤および研磨装置。
(4) 研摩中に前記研磨定盤の背後を正圧にして気体ないし冷却剤を被研磨材表面に流出させ、又は負圧にして遊離砥粒を気孔に固着させることにより、減圧又は加圧を行うことを可能にし、被研磨材と研磨定盤との面圧および、研磨速度と研磨面の粗さを制御することが可能な(1)に記載の研磨定盤および(3)に記載の研磨装置。
(5) 研磨定盤と被研削材との間の研磨削屑、砥粒などの除去を多孔体より気体又は洗浄水を出して行うことを特徴とする(1)または(4)に記載の研磨定盤および研磨装置。
<作用>
(1) In a polishing surface plate for lapping polishing using a polishing liquid containing abrasive grains, metal particles are connected by sintering or in the presence of a resin binder, and communicated from the back surface of the surface plate to the polishing surface. A polishing surface plate characterized by being formed as a porous body having pores.
(2) The average diameter of the abrasive grains is 1 μm or more, the average pore diameter is 0.5 μm or more and 20 μm or less, and the average pore diameter is 2/3 or less of the average diameter of the abrasive grains ( 1) The polishing surface plate as described.
(3) When polishing while supplying a polishing liquid containing abrasive grains, a part of the abrasive grains is trapped in the pores of the polishing platen and acts on the material to be ground (1) The polishing surface plate and polishing apparatus described.
(4) During polishing, the back of the polishing platen is set to a positive pressure so that a gas or coolant flows out to the surface of the material to be polished, or the negative abrasive pressure is fixed to the pores by reducing the pressure or pressure. The polishing surface plate according to (1) and the surface pressure between the material to be polished and the polishing surface plate, and the polishing speed and the roughness of the polishing surface can be controlled. Polishing equipment.
(5) The method according to (1) or (4), wherein removal of polishing chips, abrasive grains, etc. between the polishing surface plate and the material to be ground is performed by discharging gas or washing water from the porous body. Polishing surface plate and polishing apparatus.
<Action>

本発明(1)によれば、研削砥粒を含む研削液を用いてラッピング研磨する研磨定盤において、金属粒子を焼結又は樹脂を結合剤として連結し、定盤背面から研摩面にかけて連通する気孔を持つ多孔体として形成することを特徴とする。本定盤は、樹脂ではなく金属をベースとするため、耐熱性にまさり、研磨時に定盤が変形することが少なく、より精密な研磨をすることができる。
本発明(2)によれば、研磨砥粒の平均径は1μm以上であり、気孔平均径は0.5μm以上20μm以下であり、気孔平均径は研磨砥粒平均径の2/3以下であるので、研磨液に含まれる遊離砥粒の一部は、気孔にトラップされその形で被研削面に作用することができる。
本発明(3)によれば、研磨砥粒を含む研摩液を供給しながら研磨する際、研磨砥粒の一部が前記研磨定盤の気孔に捕捉され、被研磨材に作用することによって、ラッピング研磨を行う。気孔は金属粒子によって囲まれているので、遊離砥粒は金属の塑性変形により固着され、しっかり固定され研磨がなされる。また、通常の研磨定盤は、有効面積を下げるために螺旋状の溝や同心円状の溝が必要であるが、本発明の定盤は多孔体であるのでその必要は無く、溝加工は不要である。しかしながら、通常の研磨定盤の場合、面精度の安定のためにも、面積減少効果は2分の1前後であるが、本発明の研磨定盤に溝加工を施すことにより、面精度の安定性を保ちながら一挙に4分の1程度まで有効面積を下げることも可能である。
According to the present invention (1), in a polishing surface plate for lapping polishing using a grinding liquid containing abrasive grains, metal particles are connected by sintering or resin as a binder, and communicated from the back surface of the surface plate to the polishing surface. It is formed as a porous body having pores. Since this surface plate is based on a metal rather than a resin, it is superior in heat resistance, and the surface plate is less likely to be deformed at the time of polishing, so that more accurate polishing can be performed.
According to the present invention (2), the average diameter of the abrasive grains is 1 μm or more, the average pore diameter is 0.5 μm or more and 20 μm or less, and the average pore diameter is 2/3 or less of the average diameter of the abrasive grains. Therefore, some of the free abrasive grains contained in the polishing liquid can be trapped in the pores and act on the surface to be ground in that form.
According to the present invention (3), when polishing while supplying a polishing liquid containing abrasive grains, a part of the abrasive grains is trapped in the pores of the polishing platen and acts on the material to be polished. Perform lapping polishing. Since the pores are surrounded by the metal particles, the loose abrasive grains are fixed by the plastic deformation of the metal, firmly fixed and polished. In addition, a normal polishing surface plate requires a spiral groove or a concentric groove to reduce the effective area, but the surface plate of the present invention is not necessary because it is a porous body, and groove processing is unnecessary. It is. However, in the case of a normal polishing surface plate, the area reduction effect is about one-half for stabilizing the surface accuracy. However, the surface accuracy can be stabilized by grooving the polishing surface plate of the present invention. It is also possible to reduce the effective area to about one quarter at a time while maintaining the properties.

本発明(4)によれば、研摩中に前記研磨定盤の背後を正圧にして気体ないし冷却剤を被研磨材表面に注入し、被研磨材と研磨定盤との距離および面圧等の調整が可能で、研磨速さと研磨面の粗さを制御することができる。この制御によって研磨面の粗さを適確にコントロールすることができるし、また、連通する気孔を通して冷却が可能であることから金属定盤特有の加工変質層の防止をすることができる。    According to the present invention (4), during polishing, the back of the polishing platen is set to a positive pressure and a gas or coolant is injected into the surface of the material to be polished, and the distance and surface pressure between the material to be polished and the polishing platen, etc. The polishing speed and the roughness of the polished surface can be controlled. By this control, the roughness of the polished surface can be accurately controlled, and cooling can be performed through the communicating pores, so that a work-affected layer unique to the metal surface plate can be prevented.

本発明(5)によれば、研磨定盤と被研削材との間の研磨削屑、遊離砥粒など除去を多孔体より気体又は洗浄水を出して行うことができるから、研磨定盤の清掃時間が従来から大幅に短縮され、研磨装置全体の研磨能率が大幅に向上する。    According to the present invention (5), the removal of polishing chips, loose abrasive grains, etc. between the polishing surface plate and the material to be ground can be performed by discharging gas or washing water from the porous body. As a result, the cleaning time is greatly shortened and the polishing efficiency of the entire polishing apparatus is greatly improved.

本発明によれば、金属定盤でありながら、被研磨材に加工変質層が少なく、樹脂定盤に近い面荒さの確保が可能であり、研磨装置全体の大幅な加工能率向上を達成することができ、産業上有用な著しい効果を奏する。    According to the present invention, although it is a metal surface plate, there are few work-affected layers on the material to be polished, surface roughness close to that of the resin surface plate can be secured, and a significant improvement in the processing efficiency of the entire polishing apparatus can be achieved And has a significant industrially useful effect.

本発明の1実施例の研磨定盤の平面図(a)及び断面図(b)を示す。The top view (a) and sectional drawing (b) of the polishing surface plate of one Example of this invention are shown. ワーク研磨時の拡大断面図Enlarged sectional view during workpiece polishing 研磨定盤と研磨装置の関係図Relationship between polishing surface plate and polishing equipment

以下、本発明の実施の形態を図面に基づいて詳細に説明する。
図1は、本発明の実施の形態を例示する研磨定盤10の平面図(a)及び断面図(b)である。断面図(b)は、平面図(a)のA−A断面図である。
通常の研磨定盤は、有効面積を下げるために螺旋状の溝や同心円状の溝が必要であるが、本発明の定盤は多孔体であるので。その必要は無く、溝加工は不要である。
金属研磨定盤は、金属粒子から構成されていて、焼結等あるいは、樹脂により金属粒子の接合によって成形される。使用される金属の種類は、通常のケメット定盤に使用される素材又はより硬い素材(炭素鋼)のようなものであっても良い。11は研磨面であって、12はその裏面である。14は12に接する面に配置される定盤ホルダー20とボルト13(図3参照)で結合されるボルト穴である。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a plan view (a) and a cross-sectional view (b) of a polishing surface plate 10 illustrating an embodiment of the present invention. Sectional drawing (b) is AA sectional drawing of top view (a).
A normal polishing surface plate needs a spiral groove or a concentric groove to reduce the effective area, but the surface plate of the present invention is a porous body. There is no need for this, and groove processing is unnecessary.
The metal polishing surface plate is composed of metal particles, and is formed by sintering or joining metal particles with a resin. The kind of metal used may be a material used for a normal chemet plate or a harder material (carbon steel). 11 is a polishing surface, and 12 is its back surface. Reference numeral 14 denotes a bolt hole which is connected to a surface plate holder 20 disposed on a surface in contact with 12 and a bolt 13 (see FIG. 3).

図2は図1(b)の断面図の一部を拡大した斜視図であるが、定盤11は多孔質に形成され、定盤11の表裏は連通する気孔によってつながっている。研磨定盤11の形成法としては、焼結等あるいは、樹脂により粒子の接合によって多孔質に形成することは可能であるが、気孔の大きさを制御可能とするために金属粒子間を樹脂等のバインダーで形成してもよい。図2において、101は金属粒、102は気孔、103は残存樹脂である。また、104は砥粒であり、105は定盤に対して相対的なワークの移動方向で、106は研磨定盤の回転方向である。107は気孔に砥粒がトラップされた状態を示す。気孔の平均気孔径は遊離砥粒平均径より小さいことが望ましく、より望ましくは2/3程度以上である。研磨定盤の原料となる金属粒の大きさは求める気孔径の大きさによって決まる。また原料の一部として使われる樹脂としてはポリエチレン等がある。      2 is an enlarged perspective view of a part of the cross-sectional view of FIG. 1B. The surface plate 11 is formed in a porous shape, and the front and back surfaces of the surface plate 11 are connected by communicating pores. As a method for forming the polishing platen 11, it is possible to form a porous structure by sintering or bonding particles by resin, but in order to control the size of pores, a resin or the like is used between metal particles. You may form with the binder of. In FIG. 2, 101 is a metal particle, 102 is a pore, 103 is a residual resin. Reference numeral 104 denotes abrasive grains, 105 denotes a movement direction of the work relative to the surface plate, and 106 denotes a rotation direction of the polishing surface plate. Reference numeral 107 denotes a state where abrasive grains are trapped in the pores. The average pore diameter of the pores is preferably smaller than the free abrasive average diameter, and more preferably about 2/3 or more. The size of the metal particles used as the raw material for the polishing platen is determined by the required pore size. Examples of the resin used as a part of the raw material include polyethylene.

図3は、研磨定盤が研磨装置に取り付けられた状態の断面図である。被研磨物がシリコンウエハを例として説明する。    FIG. 3 is a cross-sectional view of the polishing surface plate attached to the polishing apparatus. The object to be polished will be described by taking a silicon wafer as an example.

図1に示す研磨定盤10は、円盤形状となっており、一方の端面が研磨面11となっており、その裏面が12となっている。図2に示すように、定盤10は定盤ホルダー20に取り付けられていて、研磨定盤10は定盤ホルダー20により回転運動される。研磨定盤10は、外周部に形成された取付穴14を貫通して定盤ホルダー20にねじ結合されるボルト13により定盤ホルダー20に取付けられている。また、定盤ホルダー20は、中空になっていて、研磨定盤が変形しないよう複数のリングをもって支える。この複数のリングは、周囲の数か所にお互いの貫通孔16を有し、回転シャフトの中空部、流体案内通路23に繋がる。定盤ホルダー20は回転シャフト22にボルト17を介して連結されている。    The polishing surface plate 10 shown in FIG. 1 has a disk shape, one end surface is a polishing surface 11, and the back surface is 12. As shown in FIG. 2, the surface plate 10 is attached to the surface plate holder 20, and the polishing surface plate 10 is rotated by the surface plate holder 20. The polishing surface plate 10 is attached to the surface plate holder 20 with bolts 13 that pass through mounting holes 14 formed in the outer peripheral portion and are screwed to the surface plate holder 20. Further, the surface plate holder 20 is hollow, and is supported by a plurality of rings so that the polishing surface plate is not deformed. The plurality of rings have through holes 16 at several places around the ring, and are connected to the hollow portion of the rotating shaft and the fluid guide passage 23. The surface plate holder 20 is connected to the rotary shaft 22 via bolts 17.

図3に示すように、定盤10は定盤ホルダーを介して研磨装置の回転シャフト22に取付けられるようになっており、回転シャフト22を駆動する図示しないモータにより研磨定盤10は定盤ホルダー20を介して回転運動される。回転シャフト22に形成された中空部の流体案内通路23は、ロータリジョイント24を介して真空ポンプ25に接続されている。したがって、真空ポンプ25を作動させると、研磨定盤10の研磨面の気孔は流体案内通路23を介して真空ポンプ25に連通して大気圧よりも低い真空状態つまり負圧状態となり、それに伴いワークが研磨面に引き寄せられ研磨速さが上がる。この場合の多孔体は真空引きのインピーダンスが高いものでワークが接触していない部分からの真空漏れの問題を排除できる。    As shown in FIG. 3, the surface plate 10 is attached to the rotating shaft 22 of the polishing apparatus via a surface plate holder, and the polishing surface plate 10 is attached to the surface plate holder by a motor (not shown) that drives the rotating shaft 22. 20 is rotated. A hollow fluid guide passage 23 formed in the rotary shaft 22 is connected to a vacuum pump 25 via a rotary joint 24. Accordingly, when the vacuum pump 25 is operated, the pores on the polishing surface of the polishing surface plate 10 communicate with the vacuum pump 25 through the fluid guide passage 23 and become a vacuum state lower than the atmospheric pressure, that is, a negative pressure state. Is attracted to the polishing surface to increase the polishing speed. In this case, the porous body has a high evacuation impedance and can eliminate the problem of vacuum leakage from a portion where the workpiece is not in contact.

ロータリージョイント24には、加圧ポンプ29が接続されている。加圧ポンプ29は容器30内に収容された研磨液等の液体を加圧して吐出し、研磨液等の液体が流体案内通路23を介して研磨定盤10の気孔に入り込んで加工面から流出することになる。このとき、流出インピーダンスの高い多孔体のためワーク直下にも液体が流れワークと研磨盤との距離を調整することにより表面精度を保ちながら表面平滑性をあげ、またワークWの直接冷却が可能となる。また、研磨終了後であれば砥粒は放出され、研磨定盤10の研磨面が清掃される。また、加圧ポンプで送出される液体は研磨液に限らず、目的によって水でもまた気体でもよい。    A pressure pump 29 is connected to the rotary joint 24. The pressurizing pump 29 pressurizes and discharges a liquid such as a polishing liquid contained in the container 30, and the liquid such as the polishing liquid enters the pores of the polishing surface plate 10 through the fluid guide passage 23 and flows out from the processing surface. Will do. At this time, because the porous body has high outflow impedance, the liquid flows directly under the work, and the distance between the work and the polishing machine is adjusted to improve the surface smoothness while maintaining the surface accuracy, and the work W can be directly cooled. Become. Moreover, if it is after completion | finish of grinding | polishing, an abrasive grain will be discharge | released and the grinding | polishing surface of the polishing surface plate 10 will be cleaned. The liquid delivered by the pressure pump is not limited to the polishing liquid, and may be water or gas depending on the purpose.

研磨定盤10の上方には、シリコンウエハなどの被研磨物、ワークWに荷重33を与え、これを回転させるワーク保持部が装着されている。それにワーク回転シャフト又は回転ゴムベルト(図示せず)が設けられ、ワーク保持部、ワークWを自転させる。これらWと荷重33は自転すると同時に回転シャフト22により公転する定盤上の任意の位置に移動可能である。Above the polishing surface plate 10, a work holding unit that applies a load 33 to an object to be polished such as a silicon wafer and the work W and rotates the work W is mounted. A workpiece rotating shaft or a rotating rubber belt (not shown) is provided on the workpiece, and the workpiece holding unit and the workpiece W are rotated. These W and load 33 can move to any position on the surface plate that revolves around the rotating shaft 22 at the same time as it rotates.

砥粒を含む研磨液は供給口15から定盤表面11に供給される。砥粒の材質は、ダイヤモンドのような超砥粒が望ましいが、アルミナ、カーボランダムなどであっても良い。研磨液はエマルジョン液が望ましいが水でも良い。    A polishing liquid containing abrasive grains is supplied from the supply port 15 to the surface plate surface 11. The abrasive material is preferably superabrasive such as diamond, but may be alumina, carborundum, or the like. The polishing liquid is preferably an emulsion liquid, but may be water.

10 研磨定盤
11 研磨定盤の研磨面
12 11の裏面
13 研磨定盤と定盤ホルダーを結合するボルト
14 13のボルト穴
15 研磨液供給口
16 定盤支持リングの貫通孔
17 回転シャフトと定盤ホルダーを結合するボルト
22 回転シャフト
23 回転シャフトの中空部分
24 ロータリージョイント
25 真空ポンプ
26a 真空ポンプへの連絡路
26b 加圧ポンプへの連絡路
29 加圧ポンプ
30 加圧ポンプが作用する液体等
33 ワークを支持する荷重
101 金属粒子
102 気孔
103 残存樹脂
104 砥粒
105 ワークの定盤上の移動可能方向
106 定盤の回転方向
107 気孔に砥粒がトラップされた金属粒子の塑性変形部
DESCRIPTION OF SYMBOLS 10 Polishing surface plate 11 Polishing surface of polishing surface plate 12 Back surface of 11 13 Bolt which connects polishing surface plate and surface plate holder 14 Bolt hole of 13 15 Polishing liquid supply port 16 Through hole of surface plate support ring 17 Rotating shaft and constant Bolt for connecting the panel holder 22 Rotating shaft 23 Hollow portion of the rotating shaft 24 Rotary joint 25 Vacuum pump 26a Connection path to the vacuum pump 26b Connection path to the pressure pump 29 Pressure pump 30 Liquid etc. on which the pressure pump acts 33 Load 101 supporting workpiece 101 Metal particles 102 Pore 103 Residual resin 104 Abrasive grain 105 Direction of movement of workpiece on platen 106 Direction of rotation of platen 107 Plastic deformation part of metal particle with abrasive grains trapped in pores

Claims (5)

研削砥粒を含む研磨液を用いてラッピング研磨する研磨定盤において、金属粒子を焼結等で連結し又は樹脂連結剤の存在下で連結し、且つ定盤背面から研摩面にかけて連通する気孔を持つ多孔体として形成することを特徴とする研磨定盤。  In a polishing surface plate for lapping polishing using a polishing liquid containing abrasive grains, metal particles are connected by sintering or in the presence of a resin binder, and pores communicating from the back surface of the surface plate to the polishing surface are provided. A polishing surface plate characterized by being formed as a porous body. 研磨砥粒の平均径は1μm以上であり、気孔平均径は0.5μm以上20μm以下であり、気孔平均径は研磨砥粒平均径の2/3以下であることを特徴とする(1)記載の研磨定盤。  The average diameter of the abrasive grains is 1 μm or more, the average pore diameter is 0.5 μm or more and 20 μm or less, and the average pore diameter is 2/3 or less of the average diameter of the abrasive grains (1) Polishing surface plate. 研磨砥粒を含む研摩液を供給しながら研磨する際、研磨砥粒の一部が前記研磨定盤の気孔に捕捉され、被研磨材に作用することを特徴とする請求項1に記載の研磨定盤および研磨装置。  2. The polishing according to claim 1, wherein when polishing is performed while supplying a polishing liquid containing polishing abrasive grains, a part of the polishing abrasive grains is captured by pores of the polishing platen and acts on the material to be polished. Surface plate and polishing equipment. 研摩中に前記研磨定盤の背後を正圧にして気体ないし冷却剤を被研磨材表面に流出させ、減圧又は加圧を行うことを可能にし、被研磨材と研磨定盤との面圧および、研磨速度および研磨面の粗さを制御することが可能な請求項3に記載の研磨定盤および研磨装置。  During polishing, the back of the polishing platen is set to a positive pressure so that a gas or coolant flows out to the surface of the material to be polished, and pressure reduction or pressurization can be performed, and the surface pressure between the material to be polished and the polishing surface plate and The polishing surface plate and polishing apparatus according to claim 3, wherein the polishing rate and the roughness of the polishing surface can be controlled. 研磨定盤と被研磨材との間の研磨削屑、遊離砥粒などの除去を多孔体より気体又は洗浄水を出して行うことを特徴とする請求項1ないし請求項4に記載の研磨定盤および研磨装置。  The polishing according to any one of claims 1 to 4, wherein removal of polishing chips, loose abrasive grains, etc. between the polishing surface plate and the material to be polished is performed by discharging gas or washing water from the porous body. Surface plate and polishing equipment.
JP2016100902A 2016-04-27 2016-04-27 Wrapping polishing surface plate and device using the same Withdrawn JP2017196725A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116984972A (en) * 2023-08-10 2023-11-03 沈阳工业大学 Grinding and polishing integrated method and device for diamond wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116984972A (en) * 2023-08-10 2023-11-03 沈阳工业大学 Grinding and polishing integrated method and device for diamond wafer
CN116984972B (en) * 2023-08-10 2024-03-26 沈阳工业大学 Grinding and polishing integrated method and device for diamond wafer

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