TWI680526B - Wafer conversion device - Google Patents

Wafer conversion device Download PDF

Info

Publication number
TWI680526B
TWI680526B TW107119423A TW107119423A TWI680526B TW I680526 B TWI680526 B TW I680526B TW 107119423 A TW107119423 A TW 107119423A TW 107119423 A TW107119423 A TW 107119423A TW I680526 B TWI680526 B TW I680526B
Authority
TW
Taiwan
Prior art keywords
wafer
guide
wafer carrier
grooves
receiving
Prior art date
Application number
TW107119423A
Other languages
Chinese (zh)
Other versions
TW202002138A (en
Inventor
朱酉致
Yu-Chih Chu
施英汝
Ying-Ru Shih
Original Assignee
環球晶圓股份有限公司
Globalwafers Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 環球晶圓股份有限公司, Globalwafers Co., Ltd. filed Critical 環球晶圓股份有限公司
Priority to TW107119423A priority Critical patent/TWI680526B/en
Priority to CN201910125520.8A priority patent/CN110571178B/en
Application granted granted Critical
Publication of TWI680526B publication Critical patent/TWI680526B/en
Publication of TW202002138A publication Critical patent/TW202002138A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

Abstract

一種晶圓轉換裝置,適用於供一第一晶圓載具及一第二晶圓載具放置。該第一晶圓載具包含多個第一容置槽,每一第一容置槽適用於容置一晶圓。該第二晶圓載具包含多個第二容置槽,每一第二容置槽適用於容置一晶圓。該晶圓轉換裝置包含一基座、一導引單元及一頂推機構。該導引單元包括一具有多個垂直間隔排列的第一導引槽的第一導引架。該頂推機構可受控以頂推與該等第二容置槽對齊的該等第一容置槽中的該等晶圓,使該等晶圓由該等第一容置槽通過該導引單元的該第一導引架經由該等第一導引槽最終移動至該等第二容置槽內。A wafer conversion device is suitable for placing a first wafer carrier and a second wafer carrier. The first wafer carrier includes a plurality of first receiving grooves, and each first receiving groove is suitable for receiving a wafer. The second wafer carrier includes a plurality of second accommodating slots, and each of the second accommodating slots is adapted to receive a wafer. The wafer conversion device includes a base, a guide unit, and a pushing mechanism. The guide unit includes a first guide frame having a plurality of first guide grooves arranged at vertical intervals. The pushing mechanism can be controlled to push the wafers in the first receiving slots aligned with the second receiving slots, so that the wafers pass through the guide from the first receiving slots. The first guide frame of the guide unit is finally moved into the second receiving grooves through the first guide grooves.

Description

晶圓轉換裝置Wafer conversion device

本發明是有關於一種晶圓轉換裝置,特別是指一種可在兩晶圓載具間順暢地進行晶圓轉移的晶圓轉換裝置。The present invention relates to a wafer conversion device, and particularly to a wafer conversion device capable of smoothly transferring wafers between two wafer carriers.

在半導體製程中,晶圓需通過多種機台的加工製程,透過承載裝置承載晶圓在不同的製程機台之間移動,以確保晶圓在移動過程中不會損壞。為了配合不同製程所需的機台及製程環境,晶圓需存放在不同類型的承載裝置,而當晶圓要在不同承載裝置間轉換時,會使用晶圓轉換裝置來協助晶圓在兩不同承載裝置間互換位置,以確保晶圓轉移效率並避免晶圓損壞。晶圓轉換裝置的使用方式是由操作人員先將要轉出晶圓的承載裝置及要接收晶圓的承載裝置依照順序放置在晶圓轉換裝置上的指定位置,確認兩承載裝置放置的位置正確後,再利用晶圓轉換裝置的推移機構,將要轉出晶圓的承載裝置中的晶圓轉移至要接收晶圓的承載裝置內,確認轉移動作完成後,操作人員再依序將兩承載裝置取出。In the semiconductor manufacturing process, the wafers need to be processed by a variety of machines, and the wafers are moved between different process machines through the carrier device to ensure that the wafers will not be damaged during the movement. In order to match the machine and process environment required for different processes, wafers need to be stored in different types of carrier devices. When wafers are to be changed between different carrier devices, wafer conversion devices are used to assist the wafers in two different Positions are interchanged between the carrier devices to ensure wafer transfer efficiency and avoid wafer damage. The use method of the wafer conversion device is that the operator first places the carrier device to be transferred out of the wafer and the carrier device to receive the wafer in a designated position on the wafer conversion device in order. After confirming that the positions of the two carrier devices are correct, Then, the transfer mechanism of the wafer conversion device is used to transfer the wafers in the carrier device to be transferred out to the carrier device to receive the wafers. After confirming that the transfer operation is completed, the operator sequentially removes the two carrier devices .

然而,習知的晶圓轉換裝置在進行晶圓轉移時,將可能因為晶圓經過高溫製程後因熱應力產生翹曲的情形,導致在轉換晶圓的過程中,晶圓無法順利地由轉出晶圓的承載裝置的容置槽進入要接收晶圓的承載裝置的容置槽,而碰撞接受晶圓的承載裝置的槽壁,發生晶圓破裂的情形,而影響製程良率。此外,晶圓移轉的過程不順利,也會影響生產效率。However, when the conventional wafer conversion device performs wafer transfer, the wafer may be warped due to thermal stress after the wafer is subjected to a high-temperature process, resulting in the wafer not being smoothly transferred from the transfer during the wafer conversion process. The accommodating groove of the carrier device out of the wafer enters the accommodating groove of the carrier device to receive the wafer, and collides with the groove wall of the carrier device receiving the wafer, and the wafer breaks, which affects the process yield. In addition, the wafer transfer process is not smooth, which will also affect production efficiency.

因此,本發明之其中一目的,即在提供一種可在兩晶圓載具間順暢地進行晶圓轉移,並防止晶圓破裂的晶圓轉換裝置。Therefore, one object of the present invention is to provide a wafer conversion device that can smoothly transfer wafers between two wafer carriers and prevent wafer cracking.

本發明晶圓轉換裝置適用於供一第一晶圓載具及一第二晶圓載具放置,該第一晶圓載具包含多個垂直間隔排列的第一容置槽、一連通該等第一容置槽之一側的第一入口,及一連通該等第一容置槽之另一側的第一出口,每一第一容置槽適用於容置一晶圓,該第二晶圓載具包含多個垂直間隔排列的第二容置槽及一連通該等第二容置槽之一側且朝向該第一出口的第二入口,每一第二容置槽適用於容置一晶圓,該晶圓轉換裝置包含一基座;一導引單元,包括一設置於該基座的第一導引架,該第一導引架包括多個垂直間隔排列且位於該第一晶圓載具及該第二晶圓載具之間的第一導引槽、一連通該等第一導引槽之一側且面向該第一入口的導引入口及一連通該等第一導引槽之另一側且面向該第二入口的導引出口,每一第一導引槽適用於讓一晶圓通過,且每一第一導引槽具有一鄰近該第一晶圓載具且垂直對齊該等第一容置槽其中一者的入口段,及一連通該入口段且鄰近該第二晶圓載具並垂直對齊該等第二容置槽其中一者的出口段,該等入口段的垂直高度大於該等出口段的垂直高度;及一頂推機構,可動地設置於該基座,該頂推機構可受控穿過該第一晶圓載具的該第一入口以頂推與該等第二容置槽對齊的該等第一容置槽中的該等晶圓,使該等晶圓由該等第一容置槽通過該第一出口進入該導引單元的該第一導引架的該導引入口,經由該等第一導引槽並從該導引出口離開,最終通過該第二晶圓載具的該第二入口移動至該等第二容置槽內。The wafer conversion device of the present invention is suitable for placing a first wafer carrier and a second wafer carrier. The first wafer carrier includes a plurality of first receiving grooves arranged in a vertical interval, and a first communication container connected to the first containers. A first inlet on one side of the receiving groove and a first outlet communicating with the other side of the first receiving grooves. Each first receiving groove is suitable for receiving a wafer, and the second wafer carrier It includes a plurality of second accommodating grooves arranged at a vertical interval and a second inlet that communicates with one side of the second accommodating grooves and faces the first outlet. Each second accommodating groove is suitable for accommodating a wafer. The wafer conversion device includes a base; a guide unit includes a first guide frame disposed on the base, the first guide frame includes a plurality of vertically spaced arrays and is located on the first wafer carrier; A first guide groove between the second wafer carrier, a guide entrance communicating with one side of the first guide grooves and facing the first entrance, and another passage connecting the first guide grooves A guide exit on one side and facing the second inlet, each first guide groove is adapted to allow a wafer to pass through, and each first The guide groove has an entrance section adjacent to the first wafer carrier and vertically aligning one of the first receiving grooves, and an entrance section communicating with the entrance section and adjacent to the second wafer carrier and vertically aligning the second containers. Set the exit section of one of the slots, the vertical height of the entrance sections is greater than the vertical height of the exit sections; and a pushing mechanism is movably disposed on the base, and the pushing mechanism can be controlled to pass through the first section. The first entrance of a wafer carrier pushes the wafers in the first receiving slots aligned with the second receiving slots, so that the wafers pass through the first receiving slots. The first exit enters the guide entrance of the first guide frame of the guide unit, passes through the first guide grooves and exits from the guide exit, and finally passes through the second of the second wafer carrier. The entrance moves into the second accommodation slots.

在一些實施態樣中,該第一導引架包括兩個相間隔且位於該第一晶圓載具及該第二晶圓載具之間的側壁,每一側壁具有一內壁面,該等內壁面彼此相互面對,該等內壁面形成有該等第一導引槽,該等側壁界定出該導引入口及該導引出口。In some embodiments, the first guide frame includes two side walls spaced apart and located between the first wafer carrier and the second wafer carrier, each side wall has an inner wall surface, and the inner wall surfaces Facing each other, the inner wall surfaces are formed with the first guide grooves, and the side walls define the guide inlet and the guide outlet.

在一些實施態樣中,該第一導引架還包括一把手,該把手的兩端分別連接該等側壁。In some embodiments, the first guide frame further includes a handle, and two ends of the handle are respectively connected to the side walls.

在一些實施態樣中,該等第一容置槽的數量與該等第二容置槽的數量不同,該晶圓轉換裝置還包含一設置於該基座的高度調整機構,該高度調整機構適用於承載該第一晶圓載具並可將該第一晶圓載具由一第一高度位置調整至一高度高於該第一高度位置的第二高度位置,當該第一晶圓載具在該第一高度位置時,該第一晶圓載具與該第二晶圓載具兩者其中之一的全部容置槽與其中另一的一部分容置槽位置相互對齊,且該第一導引架的該等第一導引槽與該等第一容置槽及該等第二容置槽位置相互對齊,當該第一晶圓載具在該第二高度位置時,該第一晶圓載具與該第二晶圓載具其中之一的全部容置槽與其中另一的另一部分容置槽位置相互對齊,且該第一導引架的該等第一導引槽與該等第一容置槽及該等第二容置槽位置相互對齊。In some implementation forms, the number of the first receiving grooves is different from the number of the second receiving grooves. The wafer conversion device further includes a height adjustment mechanism disposed on the base. The height adjustment mechanism Suitable for carrying the first wafer carrier and adjusting the first wafer carrier from a first height position to a second height position higher than the first height position, when the first wafer carrier is in the At the first height position, the positions of all the receiving grooves of one of the first wafer carrier and the second wafer carrier and a part of the receiving grooves of the other wafer are aligned with each other. The positions of the first guide grooves, the first receiving grooves, and the second receiving grooves are aligned with each other. When the first wafer carrier is at the second height position, the first wafer carrier and the The positions of all the accommodating grooves of one of the second wafer carriers and the other accommodating grooves of the other are aligned with each other, and the first guide grooves and the first accommodating grooves of the first guide frame And the positions of the second receiving slots are aligned with each other.

在一些實施態樣中,該導引單元還包括一設置於該基座的第二導引架,該第二導引架包括多個垂直間隔排列且分別與該等第二容置槽及該等第一導引槽的該等出口段對齊的第二導引槽。In some embodiments, the guide unit further includes a second guide frame disposed on the base, and the second guide frame includes a plurality of vertically spaced and spaced apart from the second receiving grooves and the A second guide slot that is aligned with the exit sections of the first guide slot.

在一些實施態樣中,該高度調整機構包括一第一承載板、一第二承載板及一連接該等側壁供該第一晶圓載具設置的第一底板,該第一承載板的高度小於該第二承載板的高度,該第一承載板及該第二承載板其中之一設置於該基座並承載該第一底板,該第一承載板可承載該第一晶圓載具使該第一晶圓載具位在該第一高度位置,該第二承載板可承載該第一晶圓載具使該第一晶圓載具位在該第二高度位置。In some embodiments, the height adjustment mechanism includes a first carrier plate, a second carrier plate, and a first base plate connected to the side walls for the first wafer carrier to be disposed. The height of the first carrier plate is less than The height of the second carrier plate, one of the first carrier plate and the second carrier plate is disposed on the base and carries the first base plate, and the first carrier plate can carry the first wafer carrier so that the first A wafer carrier is located at the first height position, and the second carrier plate can carry the first wafer carrier so that the first wafer carrier is located at the second height position.

在一些實施態樣中,該第一導引架還包括至少一設置於該等側壁的限位件,該限位件適用於定位該第一晶圓載具或該第二晶圓載具。In some embodiments, the first guide frame further includes at least one stopper disposed on the sidewalls, and the stopper is suitable for positioning the first wafer carrier or the second wafer carrier.

在一些實施態樣中,該高度調整機構包括一第一底板及一第二底板,該第一底板的高度小於該第二底板的高度,該第一底板及該第二底板其中之一設置於該基座並連接該等側壁,該第一底板可承載該第一晶圓載具使該第一晶圓載具位在該第一高度位置,該第二底板可承載該第一晶圓載具使該第一晶圓載具位在該第二高度位置,藉此可將該第一晶圓載具在該第一高度位置及該第二高度位置間調整變換。In some embodiments, the height adjustment mechanism includes a first bottom plate and a second bottom plate. The height of the first bottom plate is less than the height of the second bottom plate. One of the first bottom plate and the second bottom plate is disposed on The base is connected to the side walls, the first base plate can carry the first wafer carrier so that the first wafer carrier is positioned at the first height position, and the second base plate can carry the first wafer carrier so that the The first wafer carrier is located at the second height position, whereby the first wafer carrier can be adjusted and changed between the first height position and the second height position.

在一些實施態樣中,該導引單元還包括一設置於該基座的第二導引架,該第二導引架包括多個垂直間隔排列且分別與該等第一容置槽及該等第一導引槽的該等入口段對齊的第二導引槽。In some embodiments, the guide unit further includes a second guide frame disposed on the base. The second guide frame includes a plurality of vertically spaced and spaced apart from the first receiving slots and the A second guide slot that is aligned with the entry sections of the first guide slot.

在一些實施態樣中,該高度調整機構包括一第一承載板及一第二承載板,該第一承載板的高度小於該第二承載板的高度,該第一承載板及該第二承載板其中之一設置於該基座並承載該第一晶圓載具,該第一承載板可承載該第一晶圓載具使該第一晶圓載具位在該第一高度位置,該第二承載板可承載該第一晶圓載具使該第一晶圓載具位在該第二高度位置。In some embodiments, the height adjustment mechanism includes a first bearing plate and a second bearing plate. The height of the first bearing plate is smaller than the height of the second bearing plate. The first bearing plate and the second bearing plate. One of the plates is disposed on the base and carries the first wafer carrier. The first carrier plate can carry the first wafer carrier such that the first wafer carrier is at the first height position, and the second carrier The board can carry the first wafer carrier so that the first wafer carrier is positioned at the second height position.

在一些實施態樣中,每一第一導引槽的入口段具有一朝向該第一晶圓載具的第一端及一連通該出口段的第二端,該入口段的垂直高度自該第一端至該第二端漸縮。In some embodiments, the entrance section of each first guide slot has a first end facing the first wafer carrier and a second end communicating with the exit section, and the vertical height of the entrance section is from the first One end is tapered to the second end.

在一些實施態樣中,每一第一導引槽的該入口段的該第一端的垂直高度大於每一第一容置槽的垂直高度。In some embodiments, the vertical height of the first end of the inlet section of each first guide slot is greater than the vertical height of each first receiving slot.

在一些實施態樣中,每一第一導引槽的該出口段的垂直高度不大於每一第二導引槽的垂直高度。In some embodiments, the vertical height of the exit section of each first guide groove is not greater than the vertical height of each second guide groove.

在一些實施態樣中,每一第一導引槽的該入口段的長度不小於該出口段的長度。In some embodiments, the length of the inlet section of each first guide groove is not less than the length of the outlet section.

在一些實施態樣中,每一第一導引槽的該出口段的長度為每一晶圓的直徑的15%-20%。In some embodiments, the length of the exit section of each first guide groove is 15% -20% of the diameter of each wafer.

在一些實施態樣中,每一出口段具有一連通該入口段的第一部分及一連通該第一部分及該導引出口的第二部分,該第二部分的垂直高度自遠離該第一部分的一端至鄰近該第一部分的一端漸縮,該第二部分具有一位於鄰近該第一部分的一端的夾角,該夾角介於10-15度之間。In some implementation forms, each exit section has a first section connecting the inlet section and a second section connecting the first section and the guide outlet, and the vertical height of the second section is from an end remote from the first section. The tapered portion is tapered to an end adjacent to the first portion, and the second portion has an included angle located at an end adjacent to the first portion, and the included angle is between 10-15 degrees.

在一些實施態樣中,每一第一導引槽的該入口段具有一位於該第二端的夾角,該夾角介於10-15度之間。In some embodiments, the entrance section of each first guide groove has an included angle at the second end, and the included angle is between 10-15 degrees.

在一些實施態樣中,該等內壁面凹陷形成有該等第一導引槽,每一第一導引槽凹陷的深度為每一晶圓的直徑的10%-15%。In some implementation forms, the inner wall surfaces are recessed with the first guide grooves, and the depth of each first guide groove depression is 10% -15% of the diameter of each wafer.

本發明至少具有以下功效:藉由該導引單元的該第一導引架的該等入口段的垂直高度大於該等出口段及該等第一容置槽的垂直高度,該等晶圓從該第一晶圓載具轉換至該第二晶圓載具的過程中,該等晶圓係由該等第一容置槽進入該等入口段而被導引至該等出口段,最後進入該等第二容置槽。因該等入口段的垂直高度大於該等第一容置槽的垂直高度,該等晶圓即使有翹曲依然可以順利進入該等入口段而不容易破裂,如此可確保該等晶圓能順暢地由該第一晶圓載具轉移至該第二晶圓載具,避免該等晶圓在轉移過程破裂,而有效提升製程良率及生產效率。The present invention has at least the following effects: by the vertical height of the inlet sections of the first guide frame of the guide unit being greater than the vertical height of the outlet sections and the first receiving slots, the wafers from In the process of converting the first wafer carrier to the second wafer carrier, the wafers are guided from the first receiving tank into the inlet section and guided to the exit section, and finally enter the The second receiving slot. Because the vertical height of the entrance sections is greater than the vertical height of the first receiving grooves, the wafers can smoothly enter the entrance sections without warping even if warped, so that the wafers can be smoothed. The ground is transferred from the first wafer carrier to the second wafer carrier to prevent the wafers from cracking during the transfer process, and effectively improve the process yield and production efficiency.

在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are represented by the same numbers.

參閱圖1、圖2及圖5,本發明晶圓轉換裝置的一第一實施例,適用於供一第一晶圓載具1及一第二晶圓載具2放置。該第一晶圓載具1包含多個垂直間隔排列的第一容置槽11、一連通該等第一容置槽11之一側的第一入口12,及一連通該等第一容置槽11之另一側的第一出口13,每一第一容置槽11適用於容置一晶圓W。該第二晶圓載具2包含多個垂直間隔排列的第二容置槽21及一連通該等第二容置槽21之一側且朝向該第一出口13的第二入口22,每一第二容置槽21適用於容置一晶圓W。該晶圓轉換裝置包含一基座3、一定位單元4、一導引單元5、一高度調整機構6及一頂推機構7。在本實施例中,該第一晶圓載具1是採用鐵氟龍晶圓盒,該第二晶圓載具2是採用石英晶舟,該第一晶圓載具1及該第二晶圓載具2是以該第一出口13、該第二入口22相向的方式設置,該等第二容置槽21數量為偶數個,而該等第一容置槽11的數量小於該等第二容置槽21的數量,該等第一容置槽11數量為該等第二容置槽21數量的二分之一。其中,該等第一容置槽11數量是以25個為例(位於該第一晶圓載具1兩側的兩個槽合計為一個第一容置槽11),該等第二容置槽21數量是以50個為例(位於該第二晶圓載具2兩側的兩個槽合計為一個第二容置槽21),且該等第一容置槽11彼此之間的垂直間隔距離是該等第二容置槽21彼此之間垂直間隔距離的兩倍,但該等第一容置槽11及該等第二容置槽21不以此數量及間隔距離為限,且該第一晶圓載具1及該第二晶圓載具2的類型也不以前述內容為限。Referring to FIGS. 1, 2 and 5, a first embodiment of a wafer conversion device according to the present invention is suitable for placing a first wafer carrier 1 and a second wafer carrier 2. The first wafer carrier 1 includes a plurality of first receiving grooves 11 arranged at a vertical interval, a first inlet 12 communicating with one side of the first receiving grooves 11, and a first receiving groove communicating with the first receiving grooves 11. The first outlet 13 on the other side of 11, each of the first accommodating grooves 11 is suitable for accommodating a wafer W. The second wafer carrier 2 includes a plurality of second accommodating grooves 21 arranged vertically and a second inlet 22 communicating with one side of the second accommodating grooves 21 and facing the first outlet 13. The two accommodating grooves 21 are adapted to accommodate one wafer W. The wafer conversion device includes a base 3, a positioning unit 4, a guiding unit 5, a height adjusting mechanism 6, and a pushing mechanism 7. In this embodiment, the first wafer carrier 1 is a Teflon wafer box, the second wafer carrier 2 is a quartz wafer boat, the first wafer carrier 1 and the second wafer carrier 2 It is set in such a way that the first outlet 13 and the second inlet 22 face each other. The number of the second accommodation slots 21 is an even number, and the number of the first accommodation slots 11 is smaller than the number of the second accommodation slots. The number of the first accommodating slots 11 is one half of the number of the second accommodating slots 21. Among them, the number of the first receiving slots 11 is 25 (for example, the two slots on both sides of the first wafer carrier 1 are combined into one first receiving slot 11), and the second receiving slots 11 The number 21 is based on 50 as an example (the two slots located on the two sides of the second wafer carrier 2 are combined into one second receiving slot 21), and the first receiving slots 11 are vertically spaced apart from each other. Is twice the vertical distance between the second accommodation slots 21, but the first accommodation slots 11 and the second accommodation slots 21 are not limited to this number and the separation distance. The types of a wafer carrier 1 and the second wafer carrier 2 are not limited to the foregoing.

該基座3為一長方形的板座。該定位單元4包含兩個限位壁41及一擋止壁42。該擋止壁42設置於該基座3一端,該等限位壁41分別設置於該基座3兩側並連接該擋止壁42。該基座3、該擋止壁42及該等限位壁41共同界定出一放置槽S,該放置槽S供該第一晶圓載具1、該第二晶圓載具2、該導引單元5及該高度調整機構6放置。The base 3 is a rectangular plate base. The positioning unit 4 includes two limiting walls 41 and a blocking wall 42. The blocking wall 42 is disposed at one end of the base 3, and the limiting walls 41 are respectively disposed on both sides of the base 3 and connected to the blocking wall 42. The base 3, the stop wall 42 and the limiting walls 41 define a placement slot S, which is used for the first wafer carrier 1, the second wafer carrier 2, and the guide unit. 5 and the height adjustment mechanism 6 are placed.

參閱圖3至圖6,該導引單元5包括一設置於該基座3的第一導引架51及一設置於該基座3的第二導引架52。該第一導引架51包括兩個相間隔且位於該第一晶圓載具1及該第二晶圓載具2之間的側壁511、一兩端分別連接該等側壁511頂側的把手512及兩個設置於側壁511的限位件516。每一側壁511具有一內壁面515且形成有四個朝向該第一晶圓載具1地卡槽517,該等內壁面515彼此相互面對,該等內壁面515形成有多個垂直間隔排列的第一導引槽518(位於兩側壁511的兩個槽合計為一個第一導引槽518),位於該等內壁面515上的每一第一導引槽518可供該晶圓W的周緣容置、通過,並提供相應的導引效果。該等卡槽517供該第一晶圓載具1的四個卡塊(圖未示)卡入,藉此使該第一晶圓載具1接合於該第一導引架51,其中該等卡槽517及該等卡塊(圖未示)的數量並不以四為限。該等側壁511及該把手512界定出一連通該等第一導引槽518之一側且面向該第一入口12的導引入口513及一連通該等第一導引槽518之另一側且面向該第二入口22的導引出口514。每一第一導引槽518適用於讓該晶圓W通過,且每一第一導引槽518具有一鄰近該第一晶圓載具1且垂直對齊該等第一容置槽11其中一者的入口段518a,及一連通該入口段518a且鄰近該第二晶圓載具2並垂直對齊該等第二容置槽21其中一者的出口段518b。每一入口段518a具有一朝向該第一晶圓載具1的第一端518a1及一連通該出口段518b的第二端518a2,該入口段518a的垂直高度自該第一端518a1至該第二端518a2漸縮,使該入口段518a截面形狀大致呈錐形,其夾角θ可在10-15度之間,且每一入口段518a的垂直高度大於每一出口段518b的垂直高度,使得該等晶圓W在通過該入口段518a的過程中能夠被導正,且每一入口段518a的長度L1不小於每一出口段518b的長度L2,如此可確保夾角θ在適當的範圍內。當夾角θ越小,晶圓W通過入口段518a時受到的垂直分力則越小,使得晶圓W能夠比較順暢的進入出口段518b。再參閱圖6A,每一出口段518b具有一連通該入口段518a的第一部分518b1及一連通該第一部分518b1及該導引出口514的第二部分518b2,該第二部分518b2的垂直高度自遠離該第一部分518b1的一端至鄰近該第一部分518b1的一端漸縮,該第二部分518b2具有一位於鄰近該第一部分518b1的一端的夾角α,該夾角α介於10-15度之間。其中,每一出口段518b的長度L2大約為晶圓W的直徑的15%-20%,而每一第一導引槽518自該等側壁511的內壁面515向內凹陷的深度L3大約為晶圓W的直徑的10%-15%,使得晶圓W通過每一第一導引槽518時能穩固地容置在每一第一導引槽518內。值得一提的是,長度L2、深度L3若是太大,將會增加該等晶圓W在轉換過程的摩擦力,而長度L2、深度L3若是太小,對該等晶圓W的支撐力則不足,因此長度L2、深度L3需設定在一合適的範圍內。更進一步地,每一入口段518a的該第一端518a1的垂直高度X2大於每一第一容置槽11的垂直高度X1,每一第一導引槽518的該出口段518b的垂直高度不大於每一第二導引槽524a的垂直高度。該等限位件516分別是形成於該等側壁511之面向該第一晶圓載具1的一側且垂直延伸的兩個肋條,用以夾持該第一晶圓載具1的兩側,使該第一晶圓載具1相對於第一導引架51定位,可防止該第一晶圓載具1左右晃動。其中,限位件516並不限於兩個肋條的形式,只要能夠定位該第一晶圓載具1即可。Referring to FIGS. 3 to 6, the guide unit 5 includes a first guide frame 51 disposed on the base 3 and a second guide frame 52 disposed on the base 3. The first guide frame 51 includes two side walls 511 spaced apart and located between the first wafer carrier 1 and the second wafer carrier 2, and a handle 512 connected to the top side of the side walls 511 at both ends and Two limiting members 516 are disposed on the side wall 511. Each side wall 511 has an inner wall surface 515 and four grooves 517 facing the first wafer carrier 1 are formed. The inner wall surfaces 515 face each other, and the inner wall surfaces 515 are formed with a plurality of vertically spaced arrays. First guide grooves 518 (the two grooves on the two side walls 511 together constitute a first guide groove 518), and each of the first guide grooves 518 on the inner wall surfaces 515 is available for the periphery of the wafer W Accept, pass, and provide corresponding guidance effects. The card slots 517 are used for four card blocks (not shown) of the first wafer carrier 1 to be engaged, thereby engaging the first wafer carrier 1 to the first guide frame 51, and the cards The number of slots 517 and the number of such blocks (not shown) is not limited to four. The side walls 511 and the handle 512 define a guide entrance 513 that communicates with one side of the first guide grooves 518 and faces the first entrance 12 and another side that communicates with the first guide grooves 518 It faces the guide exit 514 of the second inlet 22. Each of the first guide grooves 518 is adapted to allow the wafer W to pass through, and each of the first guide grooves 518 has a position adjacent to the first wafer carrier 1 and vertically aligned with one of the first receiving grooves 11. And an exit section 518b that communicates with the entry section 518a and is adjacent to the second wafer carrier 2 and is vertically aligned with one of the second receiving slots 21. Each entrance section 518a has a first end 518a1 facing the first wafer carrier 1 and a second end 518a2 communicating with the exit section 518b. The vertical height of the entrance section 518a is from the first end 518a1 to the second The end 518a2 is tapered, so that the cross-sectional shape of the inlet section 518a is generally tapered, and the included angle θ can be between 10-15 degrees, and the vertical height of each inlet section 518a is greater than the vertical height of each outlet section 518b, making the Wait until the wafer W can be guided in the process of passing through the entrance section 518a, and the length L1 of each entrance section 518a is not less than the length L2 of each exit section 518b, so as to ensure that the included angle θ is within an appropriate range. When the included angle θ is smaller, the vertical component force that the wafer W receives when passing through the entrance section 518a is smaller, so that the wafer W can enter the exit section 518b smoothly. Referring again to FIG. 6A, each exit section 518b has a first section 518b1 communicating with the entry section 518a and a second section 518b2 communicating with the first section 518b1 and the guide exit 514. The vertical height of the second section 518b2 is far from An end of the first portion 518b1 is tapered to an end adjacent to the first portion 518b1, and the second portion 518b2 has an included angle α located at an end adjacent to the first portion 518b1, and the included angle α is between 10-15 degrees. The length L2 of each exit section 518b is approximately 15% -20% of the diameter of the wafer W, and the depth L3 of each first guide groove 518 recessed inward from the inner wall surface 515 of the side walls 511 is approximately 10% -15% of the diameter of the wafer W, so that the wafer W can be stably contained in each of the first guide grooves 518 when passing through each of the first guide grooves 518. It is worth mentioning that if the length L2 and the depth L3 are too large, the friction of the wafers W during the conversion process will be increased, and if the length L2 and the depth L3 are too small, the support force for the wafers W will be increased. Insufficient, so the length L2 and depth L3 need to be set within a suitable range. Furthermore, the vertical height X2 of the first end 518a1 of each inlet section 518a is greater than the vertical height X1 of each first receiving slot 11, and the vertical height of the outlet section 518b of each first guide slot 518 is not Greater than the vertical height of each of the second guide grooves 524a. The limiting pieces 516 are two ribs formed on one side of the side walls 511 facing the first wafer carrier 1 and extending vertically, for clamping the two sides of the first wafer carrier 1 so that The first wafer carrier 1 is positioned relative to the first guide frame 51 to prevent the first wafer carrier 1 from shaking from side to side. The limiting member 516 is not limited to the form of two ribs, as long as the first wafer carrier 1 can be positioned.

參閱圖1、圖2及圖5,該第二導引架52包括一主體壁521、一底壁522、四個連接桿523及兩個導引壁524。該主體壁521設置於該底壁522,並形成有一開口521a。該底壁522設置於該基座3,供該第二晶圓載具2放置,每一連接桿523係朝向該第一導引架51延伸,該連接桿523一端是可活動地樞接於該主體壁521,另一端固接於該等導引壁524。該等導引壁524是位於該第一導引架51及該第二晶圓載具2之間,並形成多個垂直間隔排列且分別與該等第一容置槽11及該等第一導引槽518的該等入口段518a對齊的第二導引槽524a(位於兩導引壁524的兩個槽合計為一個第二導引槽524a),該等導引壁524與該主體壁521相間隔。其中,該第二導引架52與該第二晶圓載具2的結合過程如下概述:首先將該等連接桿523樞轉至與該主體壁521平行,接著將該第二晶圓載具2放置於該底壁522,讓該第二晶圓載具2以該第二入口22朝相反於該主體壁521的方向放置,最後將該等連接桿523朝著該第二晶圓載具2樞轉至與該主體壁521大致垂直,即可夾持固定該第二晶圓載具2。Referring to FIGS. 1, 2 and 5, the second guide frame 52 includes a main body wall 521, a bottom wall 522, four connecting rods 523 and two guide walls 524. The main body wall 521 is disposed on the bottom wall 522 and defines an opening 521a. The bottom wall 522 is disposed on the base 3 for the second wafer carrier 2 to be placed. Each connecting rod 523 extends toward the first guide frame 51. One end of the connecting rod 523 is movably pivotally connected to the base. The other end of the main body wall 521 is fixed to the guide walls 524. The guide walls 524 are located between the first guide frame 51 and the second wafer carrier 2, and form a plurality of vertically spaced arrangements, which are respectively aligned with the first receiving grooves 11 and the first guides. The second guide grooves 524a (the two grooves located on the two guide walls 524 together constitute a second guide groove 524a) aligned with the inlet sections 518a of the guide groove 518, and the guide walls 524 and the main body wall 521 Phase space. The combining process of the second guide frame 52 and the second wafer carrier 2 is summarized as follows: first, the connecting rods 523 are pivoted to be parallel to the main body wall 521, and then the second wafer carrier 2 is placed At the bottom wall 522, the second wafer carrier 2 is placed with the second inlet 22 in a direction opposite to the main body wall 521, and finally the connecting rods 523 are pivoted toward the second wafer carrier 2. The second wafer carrier 2 is substantially perpendicular to the main body wall 521.

參閱圖2、圖5及圖7,該高度調整機構6包括一第一承載板61、一第二承載板62及一鎖固於該等側壁511供該第一晶圓載具1設置的第一底板63。該第一承載板61的高度h1小於該第二承載板62的高度h2。該第一承載板61及該第二承載板62其中之一設置於該基座3並承載該第一底板63,而該第一底板63係供該第一晶圓載具1放置,在使用時該第一承載板61及該第二承載板62是擇一放置,因此該第一承載板61可承載該第一晶圓載具1使該第一晶圓載具1位在一第一高度位置,此外若需調整高度則可由該第二承載板62承載該第一晶圓載具1,使該第一晶圓載具1位在一高度高於該第一高度位置的第二高度位置,藉此可將該第一晶圓載具1在該第一高度位置及該第二高度位置間調整變換。該第一底板63遠離該第一導引架51的一端兩側形成有導角631,導角631的範圍可在30-45度之間,以便於放置在該放置槽S。當該第一晶圓載具1在該第一高度位置時,該第一晶圓載具1的全部第一容置槽11與該第二晶圓載具2的一部分第二容置槽21位置相互對齊,當該第一晶圓載具1在該第二高度位置時,該等第一晶圓載具1的全部第一容置槽11與該第二晶圓載具2的另一部分第二容置槽21位置相互對齊。以本實施例來說,在該第一高度位置及該第二高度位置時,該第一晶圓載具1的25個第一容置槽11的垂直高度會分別對應於該第二晶圓載具2的50個該等第二容置槽21中的奇數層與偶數層。Referring to FIG. 2, FIG. 5 and FIG. 7, the height adjustment mechanism 6 includes a first carrier plate 61, a second carrier plate 62, and a first plate secured to the side walls 511 for the first wafer carrier 1 to be disposed.底板 63。 The bottom plate 63. The height h1 of the first bearing plate 61 is smaller than the height h2 of the second bearing plate 62. One of the first carrier plate 61 and the second carrier plate 62 is disposed on the base 3 and carries the first base plate 63, and the first base plate 63 is used for the first wafer carrier 1 to be placed. The first carrier plate 61 and the second carrier plate 62 are alternately placed, so the first carrier plate 61 can carry the first wafer carrier 1 so that the first wafer carrier 1 is positioned at a first height position. In addition, if the height needs to be adjusted, the first wafer carrier 1 can be carried by the second carrier plate 62, so that the first wafer carrier 1 is positioned at a second height position higher than the first height position. The first wafer carrier 1 is adjusted and changed between the first height position and the second height position. A guide angle 631 is formed on both sides of one end of the first bottom plate 63 away from the first guide frame 51, and the range of the guide angle 631 can be between 30-45 degrees, so as to be conveniently placed in the placement slot S. When the first wafer carrier 1 is at the first height position, all the first receiving grooves 11 of the first wafer carrier 1 and a part of the second receiving grooves 21 of the second wafer carrier 2 are aligned with each other. When the first wafer carrier 1 is at the second height position, all the first receiving grooves 11 of the first wafer carrier 1 and another part of the second receiving groove 21 of the second wafer carrier 2 Positions are aligned with each other. In this embodiment, at the first height position and the second height position, the vertical heights of the 25 first receiving slots 11 of the first wafer carrier 1 will correspond to the second wafer carrier, respectively. The odd-numbered layers and the even-numbered layers in two of the 50 second receiving slots 21.

需要說明的是,因為該第一底板63鎖固於第一導引架51的該等側壁511,當該第一底板63隨著該第一承載板61及該第二承載板62兩者間的替換而改變高度時,該第一導引架51也會跟著連動,使得不論是在該第一高度位置還是該第二高度位置,該第一導引架51的所有第一容置槽518皆與該等第一容置槽11及該等第二容置槽21位置相互對齊。其中,該第一底板63並非必要的元件,在一些實施態樣中可以被省略,使該第一承載板61及該第二承載板62其中之一可直接承載該第一晶圓載具1。在另一些實施態樣中,該第一承載板61及該第二承載板62其中之一設置於該基座3並承載該第二導引架52及該第二晶圓載具2,同樣藉由該第一承載板61及該第二承載板62的厚度差來調整該第一晶圓載具1及該第二晶圓載具2之間的高度差,一樣能達到使該第一晶圓載具1的全部第一容置槽11與第二晶圓載具2的一部分第二容置槽21位置相互對齊。然而,該第一承載板61及該第二承載板62其中之一設置於該基座3並承載該第一底板63是較為優選的實施態樣,因為操作上便利許多,只需要握持該第一導引架51的該把手512(見圖3)即可將該第一導引架51連同該第一底板63及該第一晶圓載具1取下,如此即可替換該第一承載板61及該第二承載板62。相反地,若該第一承載板61及該第二承載板62其中之一設置於該基座3並承載該第二導引架52及該第二晶圓載具2,要替換該第一承載板61及該第二承載板62則需要取下該第一導引架51連同該第一底板63、該第一晶圓載具1、該第二導引架52及該第二晶圓載具2,較為不便。It should be noted that, because the first bottom plate 63 is locked to the side walls 511 of the first guide frame 51, when the first bottom plate 63 is between the first bearing plate 61 and the second bearing plate 62, When the height is changed, the first guide frame 51 will also be linked, so that whether in the first height position or the second height position, all the first receiving slots 518 of the first guide frame 51 All are aligned with the positions of the first receiving grooves 11 and the second receiving grooves 21. The first base plate 63 is not an essential component, and may be omitted in some embodiments, so that one of the first carrier plate 61 and the second carrier plate 62 can directly carry the first wafer carrier 1. In other embodiments, one of the first carrier plate 61 and the second carrier plate 62 is disposed on the base 3 and carries the second guide frame 52 and the second wafer carrier 2. The height difference between the first wafer carrier 1 and the second wafer carrier 2 can be adjusted by the thickness difference between the first carrier plate 61 and the second carrier plate 62, so that the first wafer carrier can also be achieved. The positions of all the first receiving grooves 11 of 1 and a part of the second receiving grooves 21 of the second wafer carrier 2 are aligned with each other. However, one of the first carrying plate 61 and the second carrying plate 62 is disposed on the base 3 and carries the first bottom plate 63, which is a more preferable embodiment, because it is convenient in operation, it only needs to hold the The handle 512 (see FIG. 3) of the first guide frame 51 can remove the first guide frame 51 together with the first bottom plate 63 and the first wafer carrier 1, so that the first carrier can be replaced.板 61 and this second carrying plate 62. Conversely, if one of the first carrier plate 61 and the second carrier plate 62 is disposed on the base 3 and carries the second guide frame 52 and the second wafer carrier 2, the first carrier must be replaced. The plate 61 and the second carrier plate 62 need to remove the first guide frame 51 together with the first base plate 63, the first wafer carrier 1, the second guide frame 52, and the second wafer carrier 2 More inconvenient.

參閱圖8至圖10,該頂推機構7是可滑動地設置於該基座3,該頂推機構7包括一略呈L字形的頂推板71及一設置於該頂推板71末端的頂推塊72,該頂推塊72形成有多個溝槽721,使該頂推塊72呈鋸齒狀,在頂推該等晶圓W時,該等晶圓W將滑動至該溝槽721最深處而被卡住,如此即可防止該等晶圓W上下晃動。該頂推機構7可受控朝一頂推方向P移動,穿過該第一晶圓載具1的該第一入口12以頂推與部分該等第二容置槽21對齊的該等第一容置槽11中的該等晶圓W,使該等晶圓W由該等第一容置槽11通過該第一出口13進入該導引單元5的該第一導引架51的該導引入口513,經由該等第一導引槽518並從該導引出口514離開,最終如圖9般通過該第二晶圓載具2的該第二入口22移動至該等第二容置槽21內。Referring to FIG. 8 to FIG. 10, the pushing mechanism 7 is slidably disposed on the base 3. The pushing mechanism 7 includes a slightly L-shaped pushing plate 71 and an end of the pushing plate 71. A pusher block 72 having a plurality of grooves 721 formed therein, so that the pusher block 72 is sawtooth-shaped. When the wafers W are pushed up, the wafers W will slide to the grooves 721. It is stuck at the deepest place, so that the wafers W can be prevented from shaking up and down. The pushing mechanism 7 can be controlled to move in a pushing direction P through the first inlet 12 of the first wafer carrier 1 to push the first containers aligned with some of the second receiving slots 21. Place the wafers W in the slot 11 such that the wafers W enter the first guide frame 51 of the guide unit 5 from the first receiving slot 11 through the first outlet 13 The inlet 513 passes through the first guide grooves 518 and exits from the guide outlet 514, and finally moves to the second receiving grooves 21 through the second inlet 22 of the second wafer carrier 2 as shown in FIG. 9. Inside.

參閱圖6、圖10至圖12,以下介紹本發明晶圓轉換裝置的第一實施例的操作方法:圖中該晶圓W僅以一片為示例,首先如圖10選用該高度調整機構6的該第一承載板61承載該第一晶圓載具1,使該第一晶圓載具1位於高度較低的該第一高度位置,接著如圖11操作該頂推機構7朝該頂推方向P移動,讓該頂推機構7穿過該第一晶圓載具1的該第一入口12頂推位於該第一晶圓載具1的其中一第一容置槽11的該晶圓W穿過該第一出口13經由該第一導引架51的該導引入口513進入對應的該第一導引槽518的該入口段518a及該出口段518b,再經由該導引出口514離開而進入該第二導引架52的對應的該第二導引槽524a,最後如圖12穿過該第二晶圓載具2的該第二入口22移動至對應的該第二導引槽524a內,再將該頂推機構7朝該復位方向D移動回到原位,如此便完成一次頂推該晶圓W的流程。需要說明的是,因為該第一導引槽518的該入口段518a的垂直高度X2大於該第一容置槽11的垂直高度X1,且該出口段518b的垂直高度不大於該第二導引槽524a的垂直高度,在晶圓轉換的過程中即使該晶圓W有翹曲的情形,在由該第一容置槽11轉移到該第一導引槽518時,翹曲所產生的垂直高度偏差依然能被該第一導引槽518的該入口段518a所包容,該晶圓W翹曲的部分將不會直接撞到該第一導引槽518的上下壁面而導致破裂,該晶圓W將順著該入口段518a由該第一端518a1至該第二端518a2漸縮的垂直高度進入該出口段518b,且藉由該第二部分518b2的設計使得晶圓W可順利從該出口段518b離開並進入該第二導引槽524a,經過該第二導引槽524a最後轉移至該第二容置槽21內,使得晶圓轉換過程順暢,如此不僅能減少該等晶圓W的破損而提升良率,順暢地轉換該等晶圓W也能提升生產效率。同樣地,該等晶圓W在由該第一導引槽518的該出口段518b轉移到該第二導引槽524a時,翹曲所產生的垂直高度偏差依然能被該第二導引槽524a所包容,因為該出口段518b的垂直高度不大於該第二導引槽524a的垂直高度。Referring to FIG. 6 and FIG. 10 to FIG. 12, the operation method of the first embodiment of the wafer conversion device of the present invention is described below. The wafer W in the figure is only taken as an example. First, the height adjustment mechanism 6 is selected as shown in FIG. 10. The first carrier plate 61 carries the first wafer carrier 1 so that the first wafer carrier 1 is located at the first height position having a lower height, and then the pushing mechanism 7 is operated toward the pushing direction P as shown in FIG. 11. Moving, so that the pushing mechanism 7 pushes the wafer W located in one of the first receiving grooves 11 of the first wafer carrier 1 through the first inlet 12 of the first wafer carrier 1 through the The first exit 13 enters the entry section 518a and the exit section 518b of the first guide groove 518 through the guide entrance 513 of the first guide frame 51, and exits through the guide exit 514 to enter the The corresponding second guide groove 524a of the second guide frame 52 is finally moved through the second inlet 22 of the second wafer carrier 2 into the corresponding second guide groove 524a as shown in FIG. The pushing mechanism 7 is moved back to the original position in the reset direction D, thus completing the process of pushing the wafer W once. It should be noted that, because the vertical height X2 of the inlet section 518a of the first guide slot 518 is greater than the vertical height X1 of the first receiving slot 11, and the vertical height of the outlet section 518b is not greater than the second guide The vertical height of the groove 524a, even if the wafer W is warped during the wafer conversion process, when the wafer is transferred from the first receiving groove 11 to the first guide groove 518, the vertical The height deviation can still be contained by the entrance section 518a of the first guide groove 518, and the warped portion of the wafer W will not directly hit the upper and lower wall surfaces of the first guide groove 518 and cause cracking. The circle W will enter the exit section 518b along the tapered vertical height of the entry section 518a from the first end 518a1 to the second end 518a2, and the design of the second section 518b2 will allow the wafer W to smoothly pass from the The exit section 518b leaves and enters the second guide groove 524a, and finally transfers to the second receiving groove 21 through the second guide groove 524a, so that the wafer conversion process is smooth, so that not only the wafers W can be reduced. Breakage and increase the yield, smooth conversion of these wafers W can also improve production efficiency. Similarly, when the wafers W are transferred from the exit section 518b of the first guide groove 518 to the second guide groove 524a, the vertical height deviation caused by the warpage can still be used by the second guide groove. 524a is contained because the vertical height of the exit section 518b is not greater than the vertical height of the second guide groove 524a.

再參閱圖13及圖14,由於本實施例中該第二晶圓載具2的該等第二容置槽21數量為該等第一容置槽11的兩倍,要填滿該第二晶圓載具2全部的該等第二容置槽21即需要再將另一個全滿的該第一晶圓載具1中的該等晶圓W轉換至該第二晶圓載具2,因此需要做第二次的頂推。首先將該高度調整機構6的該第一承載板61替換為該第二承載板62,使該第一晶圓載具1位於該第二高度位置,讓該等第一容置槽11對齊該第二晶圓載具2中尚未容置該等晶圓W的該等第二容置槽21。接著操作該頂推機構7依前述操作方式將該等晶圓W自該第一晶圓載具1轉移至該第二晶圓載具2,如此便完成晶圓轉換的流程。Referring again to FIG. 13 and FIG. 14, since the number of the second accommodating grooves 21 of the second wafer carrier 2 is twice the number of the first accommodating grooves 11 in this embodiment, the second crystal cavity needs to be filled. All the second accommodating slots 21 of the round carrier 2 need to convert the wafers W in the first full wafer carrier 1 to the second full wafer carrier 2, so the first Second push. First, the first carrier plate 61 of the height adjustment mechanism 6 is replaced with the second carrier plate 62, so that the first wafer carrier 1 is located at the second height position, and the first receiving grooves 11 are aligned with the first The second receiving slots 21 of the two wafer carriers 2 have not yet received the wafers W. Then, the pushing mechanism 7 is operated to transfer the wafers W from the first wafer carrier 1 to the second wafer carrier 2 according to the foregoing operation mode, so as to complete the wafer conversion process.

參閱圖15及圖16,為本發明晶圓轉換裝置的第二實施例,該第二實施例的大多數實施方式與第一實施例類似,主要差別在於,該高度調整機構6是包括一第一底板63及一第二底板64,該第一底板63的高度H1小於該第二底板64的高度H2。該第一底板63及該第二底板64其中之一設置於該基座3並鎖固於該等側壁511,該第一底板63可承載該第一晶圓載具1使該第一晶圓載具1位在該第一高度位置,該第二底板64可承載該第一晶圓載具1使該第一晶圓載具1位在該第二高度位置,藉此可將該第一晶圓載具1在該第一高度位置及該第二高度位置間調整變換。也就是說,本實施例係藉由更換不同厚度的該第一底板63及該第二底板64來調整第一晶圓載具1的高度,與第一實施例藉由在該第一底板63下設置厚度不同的該第一承載板61及該第二承載板62來調整高度,為不盡相同的實施方式。15 and FIG. 16, there is shown a second embodiment of a wafer conversion device according to the present invention. Most of the implementation of the second embodiment is similar to the first embodiment. The main difference is that the height adjustment mechanism 6 includes a first A bottom plate 63 and a second bottom plate 64. A height H1 of the first bottom plate 63 is smaller than a height H2 of the second bottom plate 64. One of the first bottom plate 63 and the second bottom plate 64 is disposed on the base 3 and locked to the side walls 511. The first bottom plate 63 can carry the first wafer carrier 1 so that the first wafer carrier 1 at the first height position, the second base plate 64 can carry the first wafer carrier 1 so that the first wafer carrier 1 is at the second height position, whereby the first wafer carrier 1 can be carried Adjust and change between the first height position and the second height position. That is, in this embodiment, the height of the first wafer carrier 1 is adjusted by replacing the first base plate 63 and the second base plate 64 with different thicknesses, and the first embodiment is performed under the first base plate 63. Setting the first bearing plate 61 and the second bearing plate 62 with different thicknesses to adjust the height is a different embodiment.

參閱圖17,為本發明晶圓轉換裝置的第三實施例,本實施例的晶圓轉換裝置同樣供一第一晶圓載具1及一第二晶圓載具2放置,並包含一基座3、一定位單元4、一導引單元5、一高度調整機構6及一頂推機構7。其中,該基座3、該定位單元4、該導引單元5的該第一導引架51及該第二導引架52、該高度調整機構6的個別結構與前述第一實施例、第二實施例相同,但使用上的相對設置關係有所差異。此外,本實施例中該第一晶圓載具1是採用石英晶舟,該第二晶圓載具2是採用鐵氟龍晶圓盒,該等第一容置槽11數量為偶數個,而該等第一容置槽11的數量大於該等第二容置槽21的數量,該等第一容置槽11數量為該等第二容置槽21數量的二倍。其中,該等第一容置槽11數量是以50個為例,該等第二容置槽21數量是以25個為例,但不以此為限。也就是說,第三實施例是將該等晶圓W從容量較大的該第一晶圓載具1轉移到容量較小的該第二晶圓載具2,與第一、第二實施例將該等晶圓W從容量較小的該第一晶圓載具1轉移到容量較大的該第二晶圓載具2,適用於不同的製程需求,且需要說明的是,本實施例的該第一晶圓載具1與第一實施例的該第二晶圓載具2相同,該第二晶圓載具2與第一實施例的該第一晶圓載具1相同。當然,第一至第三實施例也適用於容量相同的該第一晶圓載具1、該第二晶圓載具2之間的該等晶圓W的轉移,不以特定實施方式為限。Referring to FIG. 17, a third embodiment of a wafer conversion device according to the present invention is also provided. The wafer conversion device of this embodiment is also used for placing a first wafer carrier 1 and a second wafer carrier 2 and includes a base 3. , A positioning unit 4, a guiding unit 5, a height adjustment mechanism 6, and a pushing mechanism 7. The individual structures of the base 3, the positioning unit 4, the first guide frame 51 and the second guide frame 52, and the height adjustment mechanism 6 of the guide unit 5 are the same as those of the first embodiment and the first embodiment. The second embodiment is the same, but the relative setting relationship in use is different. In addition, in this embodiment, the first wafer carrier 1 is a quartz crystal boat, and the second wafer carrier 2 is a Teflon wafer box. The number of the first receiving grooves 11 is an even number, and the After the number of the first accommodating slots 11 is greater than the number of the second accommodating slots 21, the number of the first accommodating slots 11 is twice the number of the second accommodating slots 21. Among them, the number of the first receiving slots 11 is 50, and the number of the second receiving slots 21 is 25, but not limited thereto. That is, in the third embodiment, the wafers W are transferred from the first wafer carrier 1 with a larger capacity to the second wafer carrier 2 with a smaller capacity. The wafers W are transferred from the first wafer carrier 1 with a smaller capacity to the second wafer carrier 2 with a larger capacity, which are suitable for different process requirements, and it should be noted that the first A wafer carrier 1 is the same as the second wafer carrier 2 of the first embodiment, and the second wafer carrier 2 is the same as the first wafer carrier 1 of the first embodiment. Of course, the first to third embodiments are also applicable to the transfer of the wafers W between the first wafer carrier 1 and the second wafer carrier 2 having the same capacity, and are not limited to specific implementations.

具體來說,本實施例中該導引單元5的該第二導引架52是由該導引壁524接合該第一晶圓載具1,使該主體壁521的該開口521a朝向該頂推機構7,因此與第一、第二實施例有所不同。該高度調整機構6的部分也有些微差異,由於本實施例中該等第一容置槽11的數量大於該等第二容置槽21的數量,當該第一晶圓載具1在該第一高度位置時,該第一晶圓載具1的一部分第一容置槽11與該第二晶圓載具2的全部第二容置槽21位置相互對齊,當該第一晶圓載具1在該第二高度位置時,該等第一晶圓載具1的另一部分第一容置槽11與該第二晶圓載具2的全部第二容置槽21位置相互對齊,以便將該第一晶圓載具1中容置的該等晶圓W分次轉移至不同的該第二晶圓載具2。該頂推機構7的結構型態也與第一、第二實施例有所不同,本實施例中該頂推機構7係包括一略呈長方形的頂推板71及多個設置於該頂推板71且朝向該第一晶圓載具1的頂針73,每一頂針73末端形成有V字形的溝槽731,在頂推該等晶圓W時能防止該等晶圓W上下晃動,該等頂針73的數量是對應該等第二容置槽21的數量為25根,且該等頂針73的垂直高度也分別對應於該等第二容置槽21,但不以此為限。在本實施例中,該第二晶圓載具2是以多個卡塊(圖未示)配合該第一導引架51的該等卡槽517(見圖3)接合該第一導引架51,與第一實施例中該第一晶圓載具1接合該第一導引架51的方式相同。Specifically, in this embodiment, the second guide frame 52 of the guide unit 5 is joined to the first wafer carrier 1 by the guide wall 524, so that the opening 521a of the main body wall 521 is pushed toward the pusher. The mechanism 7 is different from the first and second embodiments. The height adjustment mechanism 6 is also slightly different. Since the number of the first receiving slots 11 is greater than the number of the second receiving slots 21 in this embodiment, when the first wafer carrier 1 is in the first At the height position, a part of the first receiving groove 11 of the first wafer carrier 1 and all the second receiving grooves 21 of the second wafer carrier 2 are aligned with each other. When the first wafer carrier 1 is in the first At the two height positions, the positions of the first receiving grooves 11 of the other parts of the first wafer carriers 1 and the entire second receiving grooves 21 of the second wafer carrier 2 are aligned with each other, so that the first wafer carrier The wafers W accommodated in 1 are transferred to different second wafer carriers 2 in stages. The structure of the ejection mechanism 7 is also different from the first and second embodiments. In this embodiment, the ejection mechanism 7 includes a slightly rectangular ejection plate 71 and a plurality of ejection plates disposed on the ejection mechanism. The plate 71 faces the ejector pin 73 of the first wafer carrier 1. Each end of the ejector pin 73 is formed with a V-shaped groove 731, which can prevent the wafers W from shaking up and down when the wafers W are pushed. The number of thimbles 73 corresponds to the number of the second accommodation grooves 21, and the vertical heights of the thimbles 73 also correspond to the second accommodation grooves 21, but not limited thereto. In this embodiment, the second wafer carrier 2 is engaged with the first guide frame by a plurality of clamping blocks (not shown) in cooperation with the grooves 517 (see FIG. 3) of the first guide frame 51. 51, the same way that the first wafer carrier 1 engages the first guide frame 51 in the first embodiment.

參閱圖17至圖19,以下說明本發明晶圓轉換裝置的第三實施例的操作方法:首先選用該高度調整機構6的第一承載板61,使該第一晶圓載具1位於該第一高度位置,接著操作該頂推機構7朝該頂推方向P移動,先如圖18穿過該第二導引架52的該主體壁521的該開口521a再進入該第一晶圓載具1的該第一入口12頂推位於該第一晶圓載具1的該等第一容置槽11中的一部份的該等晶圓W穿過該第一出口13,再進入該第二導引架52的對應的該等第二導引槽524a,經由該第一導引架51的該導引入口513進入對應的該等第一導引槽518的該等入口段518a及該等出口段518b,再經由該導引出口514離開,最後如圖19般穿過該第二晶圓載具2的該第二入口22移動至對應的該等第二導引槽524a內,再將該頂推機構7朝該復位方向D移動回到原位,如此便完成一次頂推該等晶圓W的流程。需要說明的是,因為該等第一導引槽518的該等入口段518a的垂直高度大於該等第二導引槽524a的垂直高度,而該等第二導引槽524a的垂直高度與該等第一容置槽11的垂直高度相同,在晶圓轉換的過程中即使該等晶圓W有翹曲的情形,在由該等第二導引槽524a轉移到該等第一導引槽518時,翹曲所產生的垂直高度偏差依然能被該等第一導引槽518的該等入口段518a所包容,該等晶圓W翹曲的部分將不會直接撞到該等第一導引槽518的上下壁面而導致破裂,該等晶圓W將順著該等入口段518a由該等第一端518a1至該等第二端518a2漸縮的垂直高度進入該等出口段518b,最後轉移至該等第二容置槽21內,使得晶圓轉換過程順暢。Referring to FIG. 17 to FIG. 19, the operation method of the third embodiment of the wafer conversion device of the present invention is described below: First, the first carrier plate 61 of the height adjustment mechanism 6 is selected so that the first wafer carrier 1 is located at the first Height position, and then the pushing mechanism 7 is operated to move in the pushing direction P, as shown in FIG. 18, through the opening 521 a of the main wall 521 of the second guide frame 52 and then entering the first wafer carrier 1. The first inlet 12 pushes the wafers W in a part of the first accommodating slots 11 of the first wafer carrier 1 through the first outlet 13 and then into the second guide. The corresponding second guide grooves 524a of the frame 52 enter the inlet sections 518a and the outlet sections of the corresponding first guide grooves 518 through the guide inlet 513 of the first guide frame 51 518b, then exit through the guide exit 514, and finally move through the second inlet 22 of the second wafer carrier 2 into the corresponding second guide grooves 524a as shown in FIG. 19, and then push the jack The mechanism 7 moves back to the original position in the reset direction D, thus completing the process of pushing the wafers W once. It should be noted that, because the vertical height of the entrance sections 518a of the first guide grooves 518 is greater than the vertical height of the second guide grooves 524a, and the vertical height of the second guide grooves 524a and the After the vertical heights of the first receiving grooves 11 are the same, even if the wafers W are warped during the wafer conversion process, the second guiding grooves 524a are transferred to the first guiding grooves. At 518, the vertical height deviation caused by the warpage can still be contained by the entrance sections 518a of the first guide grooves 518, and the warped portion of the wafers W will not directly hit the first The upper and lower walls of the guide groove 518 cause cracks, and the wafers W will enter the exit sections 518b along the tapered vertical height of the entrance sections 518a from the first ends 518a1 to the second ends 518a2. Finally, it is transferred into the second accommodating grooves 21 so that the wafer conversion process is smooth.

再參閱圖20及圖21,由於本實施例中第一晶圓載具1的該等第一容置槽11數量為該等第二容置槽21的兩倍,要將該第一晶圓載具1所有的該等晶圓W轉移掉則需要另一個空的該第二晶圓載具2,再將該第一晶圓載具1中剩餘的該等晶圓W轉移至該第二晶圓載具2,因此需要做第二次的頂推。首先將該高度調整機構6的該第一承載板61替換為該第二承載板62,使該第一晶圓載具1位於該第二高度位置,使還容置有該等晶圓W的該等第一容置槽11對齊該等第二容置槽21。接著操作該頂推機構7依前述操作方式將該等晶圓W自該第一晶圓載具1轉移至該第二晶圓載具2,如此便完成晶圓轉換的流程。Referring again to FIG. 20 and FIG. 21, since the number of the first receiving slots 11 of the first wafer carrier 1 is twice the number of the second receiving slots 21 in this embodiment, the first wafer carrier must be 1 If all the wafers W are transferred, another empty second wafer carrier 2 is required, and the remaining wafers W in the first wafer carrier 1 are transferred to the second wafer carrier 2 , So you need to do a second push. First, the first carrier plate 61 of the height adjustment mechanism 6 is replaced with the second carrier plate 62, so that the first wafer carrier 1 is located at the second height position, so that the wafer W is also accommodated. Wait until the first receiving grooves 11 are aligned with the second receiving grooves 21. Then, the pushing mechanism 7 is operated to transfer the wafers W from the first wafer carrier 1 to the second wafer carrier 2 according to the foregoing operation mode, so as to complete the wafer conversion process.

綜上所述,本發明晶圓轉換裝置藉由該導引單元5的該第一導引架51的該等入口段518a的垂直高度大於該等出口段518b及該等第一容置槽11的垂直高度,該等晶圓W從該第一晶圓載具1轉換至該第二晶圓載具2的過程中,該等晶圓W係由該等第一容置槽11進入該等入口段518a而被導引至該等出口段518b,最後進入該等第二容置槽21。因該等入口段518a的垂直高度大於該等第一容置槽11的垂直高度,該等晶圓W即使有翹曲依然可以順利進入該等入口段518a而不會破裂,如此可確保該等晶圓W能順暢地由該第一晶圓載具1轉移至該第二晶圓載具2,避免該等晶圓W在轉移過程破裂,因此能提升生產良率及生產效率,故確實能達成本發明之目的。In summary, the vertical height of the inlet sections 518a of the wafer conversion device of the present invention through the first guide frame 51 of the guide unit 5 is greater than the outlet sections 518b and the first receiving slots 11 Vertical height of the wafers W during the transition from the first wafer carrier 1 to the second wafer carrier 2, the wafers W enter the entrance sections from the first accommodation slots 11 518a is guided to the exit sections 518b, and finally enters the second accommodation slots 21. Because the vertical height of the entrance sections 518a is greater than the vertical height of the first receiving grooves 11, the wafers W can smoothly enter the entrance sections 518a without cracking even if warped, so as to ensure that Wafer W can be smoothly transferred from the first wafer carrier 1 to the second wafer carrier 2 to prevent the wafers W from cracking during the transfer process, so the production yield and production efficiency can be improved, so the cost can be achieved. The purpose of the invention.

惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited in this way, any simple equivalent changes and modifications made in accordance with the scope of the patent application and the content of the patent specification of the present invention are still Within the scope of the invention patent.

1‧‧‧第一晶圓載具1‧‧‧ the first wafer carrier

11‧‧‧第一容置槽11‧‧‧ the first receiving tank

12‧‧‧第一入口12‧‧‧ first entrance

13‧‧‧第一出口13‧‧‧First Exit

2‧‧‧第二晶圓載具2‧‧‧Second wafer carrier

21‧‧‧第二容置槽21‧‧‧Second accommodation slot

22‧‧‧第二入口22‧‧‧Second Entrance

3‧‧‧基座3‧‧‧ base

4‧‧‧定位單元4‧‧‧ positioning unit

41‧‧‧限位壁41‧‧‧limit wall

42‧‧‧擋止壁42‧‧‧stop wall

5‧‧‧導引單元5‧‧‧Guide unit

51‧‧‧第一導引架51‧‧‧First Guide Frame

511‧‧‧側壁511‧‧‧ sidewall

512‧‧‧把手512‧‧‧handle

513‧‧‧導引入口513‧‧‧Guide Entrance

514‧‧‧導引出口514‧‧‧Guide Exit

515‧‧‧內壁面515‧‧‧Inner wall surface

516‧‧‧限位件516‧‧‧Limit

517‧‧‧卡槽517‧‧‧card slot

518‧‧‧第一導引槽518‧‧‧first guide slot

518a‧‧‧入口段518a‧‧‧ entrance section

518a1‧‧‧第一端518a1‧‧‧ first end

518a2‧‧‧第二端518a2‧‧‧ second end

518b‧‧‧出口段518b‧‧‧Exit

518b1‧‧‧第一部分518b1‧‧‧Part I

518b2‧‧‧第二部分518b2 ‧‧‧ Part Two

52‧‧‧第二導引架52‧‧‧Second Guide Frame

521‧‧‧主體壁521‧‧‧Main wall

521a‧‧‧開口521a‧‧‧ opening

522‧‧‧底壁522‧‧‧ bottom wall

523‧‧‧連接桿523‧‧‧Connecting rod

524‧‧‧導引壁524‧‧‧Guide wall

524a‧‧‧第二導引槽524a‧‧‧Second guide groove

6‧‧‧高度調整機構6‧‧‧ height adjustment mechanism

61‧‧‧第一承載板61‧‧‧The first bearing plate

62‧‧‧第二承載板62‧‧‧Second loading plate

63‧‧‧第一底板63‧‧‧First floor

631‧‧‧導角631‧‧‧lead angle

64‧‧‧第二底板64‧‧‧Second floor

7‧‧‧頂推機構7‧‧‧ Pushing mechanism

71‧‧‧頂推板71‧‧‧ Pusher

72‧‧‧頂推塊72‧‧‧ Pushing block

721‧‧‧溝槽721‧‧‧Groove

73‧‧‧頂針73‧‧‧ thimble

731‧‧‧溝槽731‧‧‧Groove

W‧‧‧晶圓W‧‧‧ Wafer

S‧‧‧放置槽S‧‧‧ Placement slot

L1、L2‧‧‧長度L1, L2‧‧‧ length

L3‧‧‧深度L3‧‧‧ Depth

h1、h2‧‧‧高度h1, h2‧‧‧ height

H1、H2‧‧‧高度H1, H2‧‧‧ height

P‧‧‧頂推方向P‧‧‧ Pushing direction

D‧‧‧復位方向D‧‧‧ Reset direction

X1、X2‧‧‧垂直高度X1, X2‧‧‧ vertical height

θ、α‧‧‧夾角θ, α‧‧‧ angle

本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是本發明晶圓轉換裝置的一第一實施例的一立體圖; 圖2是該第一實施例的一立體分解圖; 圖3是一立體圖,說明該第一實施例的一導引單元的一第一導引架; 圖4是該第一導引架的一後視圖; 圖5是由圖1的剖線I-I所得出的一剖視圖,說明一第一晶圓載具在一第一高度位置; 圖6是圖5的一局部放大示意圖,說明該第一導引架的多個第一導引槽; 圖6A為圖6的一局部放大示意圖,說明每一第一導引槽的一出口段; 圖7是該第一實施例的一類似圖5的剖視圖,說明該第一晶圓載具在一第二高度位置; 圖8是該實施例的一俯視圖,說明該第一實施例的一頂推機構尚未頂推多個晶圓前,該等晶圓位於該第一晶圓載具的狀態; 圖9是該實施例的一類似圖8的俯視圖,說明該第一實施例的該頂推機構將該等晶圓自該第一晶圓載具頂推至一第二晶圓載具的狀態; 圖10是圖5的一局部放大示意圖,說明一晶圓位於該第一晶圓載具的其中一第一容置槽內; 圖11是類似於圖10的一剖視圖,說明該晶圓被該頂推機構頂推通過該第一導引架的其中一第一導引槽並進入該第二晶圓載具的其中一第二容置槽; 圖12是類似於圖10的一剖視圖,說明該晶圓被該頂推機構頂推至該第二晶圓載具的其中一第二容置槽內; 圖13是圖7的一局部放大示意圖,說明一晶圓位於該第一晶圓載具的其中一第一容置槽內; 圖14是類似於圖13的一剖視圖,說明該晶圓被該頂推機構頂推至該第二晶圓載具的其中一第二容置槽內; 圖15是本發明晶圓轉換裝置的一第二實施例的一剖視圖,說明一第一晶圓載具在一第一高度位置; 圖16是該第二實施例的一類似圖15的剖視圖,說明該第一晶圓載具在一第二高度位置; 圖17是本發明晶圓轉換裝置的一第三實施例的一立體圖; 圖18是由圖17的剖線II-II得出的一不完整的部分剖視圖,說明多個晶圓位於該第一晶圓載具的多個第一容置槽內; 圖19是類似於圖18的一剖視圖,說明部分的該等晶圓被該頂推機構頂推至該第二晶圓載具的該等第二容置槽內; 圖20是類似於圖18的一剖視圖,說明另一部分的該等晶圓位於該第一晶圓載具的該等第一容置槽內; 及 圖21是類似於圖18的一剖視圖,說明另一部分的該等晶圓被該頂推機構頂推至該第二晶圓載具的該等第二容置槽內。Other features and effects of the present invention will be clearly presented in the embodiment with reference to the drawings, in which: FIG. 1 is a perspective view of a first embodiment of a wafer conversion device of the present invention; FIG. 2 is the first implementation An exploded perspective view of the example; FIG. 3 is a perspective view illustrating a first guide frame of a guide unit of the first embodiment; FIG. 4 is a rear view of the first guide frame; FIG. 1 is a cross-sectional view illustrating a first wafer carrier at a first height position; FIG. 6 is a partially enlarged schematic view of FIG. 5, illustrating a plurality of first guides of the first guide frame; Leading grooves; FIG. 6A is a partially enlarged schematic diagram of FIG. 6 illustrating an exit section of each first guiding groove; FIG. 7 is a cross-sectional view similar to FIG. 5 of the first embodiment, illustrating the first wafer carrier At a second height position; FIG. 8 is a top view of the embodiment, illustrating a state where the wafers are located on the first wafer carrier before a pushing mechanism of the first embodiment has pushed the wafers Figure 9 is a top view similar to Figure 8 of the embodiment, illustrating the first embodiment The pushing mechanism pushes the wafers from the first wafer carrier to a second wafer carrier. FIG. 10 is a partially enlarged schematic diagram of FIG. 5, illustrating a wafer located on the first wafer carrier. FIG. 11 is a cross-sectional view similar to FIG. 10, illustrating that the wafer is pushed through one of the first guide grooves of the first guide frame by the pushing mechanism and enters the first guide groove. One of the second receiving slots of the two wafer carriers; FIG. 12 is a cross-sectional view similar to FIG. 10, illustrating that the wafer is pushed up to one of the second receiving slots of the second wafer carrier by the pushing mechanism; FIG. 13 is a partially enlarged schematic view of FIG. 7, illustrating that a wafer is located in one of the first receiving slots of the first wafer carrier; FIG. 14 is a cross-sectional view similar to FIG. 13, illustrating that the wafer is The pushing mechanism is pushed into one of the second accommodating grooves of the second wafer carrier; FIG. 15 is a cross-sectional view of a second embodiment of a wafer conversion device of the present invention, illustrating a first wafer carrier in A first height position; FIG. 16 is a cross-sectional view similar to FIG. 15 of the second embodiment, illustrating the first The round carrier is at a second height position; FIG. 17 is a perspective view of a third embodiment of the wafer conversion device of the present invention; FIG. 18 is an incomplete partial cross-sectional view obtained from the section line II-II of FIG. 17, It is explained that a plurality of wafers are located in a plurality of first accommodating grooves of the first wafer carrier; FIG. 19 is a cross-sectional view similar to FIG. FIG. 20 is a cross-sectional view similar to FIG. 18, illustrating that the other part of the wafers are located in the first receiving grooves of the first wafer carrier; 21 is a cross-sectional view similar to FIG. 18, illustrating that the wafers in another part are pushed into the second receiving grooves of the second wafer carrier by the pushing mechanism.

Claims (14)

一種晶圓轉換裝置,適用於供一第一晶圓載具及一第二晶圓載具放置,該第一晶圓載具包含多個垂直間隔排列的第一容置槽、一連通該等第一容置槽之一側的第一入口,及一連通該等第一容置槽之另一側的第一出口,每一第一容置槽適用於容置一晶圓,該第二晶圓載具包含多個垂直間隔排列的第二容置槽及一連通該等第二容置槽之一側且朝向該第一出口的第二入口,每一第二容置槽適用於容置一晶圓,該等第一容置槽的數量與該等第二容置槽的數量不同,該晶圓轉換裝置包含:一基座;一導引單元,包括一設置於該基座的第一導引架,該第一導引架包括多個垂直間隔排列且位於該第一晶圓載具及該第二晶圓載具之間的第一導引槽、一連通該等第一導引槽之一側且面向該第一入口的導引入口及一連通該等第一導引槽之另一側且面向該第二入口的導引出口,每一第一導引槽適用於讓一晶圓通過,且每一第一導引槽具有一鄰近該第一晶圓載具且垂直對齊該等第一容置槽其中一者的入口段,及一連通該入口段且鄰近該第二晶圓載具並垂直對齊該等第二容置槽其中一者的出口段,該等入口段的垂直高度大於該等出口段的垂直高度;一頂推機構,可動地設置於該基座,該頂推機構可受控穿過該第一晶圓載具的該第一入口以頂推與該等第二容置槽對齊的該等第一容置槽中的該等晶圓,使該等晶圓由該等第一容置槽通過該第一出口進入該導引單元的該第一導引架的該導引入口,經由該等第一導引槽並從該導引出口離開,最終通過該第二晶圓載具的該第二入口移動至該等第二容置槽內;及一高度調整機構,設置於該基座,並包括一第一底板及一第二底板,該第一底板的高度小於該第二底板的高度,該第一底板及該第二底板其中之一設置於該基座並連接該等側壁,該第一底板可承載該第一晶圓載具使該第一晶圓載具位在一第一高度位置,該第二底板可承載該第一晶圓載具使該第一晶圓載具位在一高度高於該第一高度位置的第二高度位置,藉此可將該第一晶圓載具在該第一高度位置及該第二高度位置間調整變換,當該第一晶圓載具在該第一高度位置時,該第一晶圓載具與該第二晶圓載具兩者其中之一的全部容置槽與其中另一的一部分容置槽位置相互對齊,且該第一導引架的該等第一導引槽與該等第一容置槽及該等第二容置槽位置相互對齊,當該第一晶圓載具在該第二高度位置時,該第一晶圓載具與該第二晶圓載具其中之一的全部容置槽與其中另一的另一部分容置槽位置相互對齊,且該第一導引架的該等第一導引槽與該等第一容置槽及該等第二容置槽位置相互對齊。A wafer conversion device is suitable for placing a first wafer carrier and a second wafer carrier. The first wafer carrier includes a plurality of first receiving grooves arranged at a vertical interval, and a first communication vessel connected to the first receiving vessel. A first inlet on one side of the receiving groove and a first outlet communicating with the other side of the first receiving grooves. Each first receiving groove is suitable for receiving a wafer, and the second wafer carrier It includes a plurality of second accommodating grooves arranged at a vertical interval and a second inlet communicating with one side of the second accommodating grooves and facing the first outlet. The number of the first accommodating grooves is different from the number of the second accommodating grooves. The wafer conversion device includes: a base; a guide unit including a first guide provided on the base; The first guide frame includes a plurality of first guide grooves arranged vertically spaced between the first wafer carrier and the second wafer carrier, and one side communicating with the first guide grooves. And a guide entrance facing the first entrance and a guide communicating with the other side of the first guide grooves and facing the second entrance Each first guide groove is adapted to allow a wafer to pass through, and each first guide groove has an entrance section adjacent to the first wafer carrier and vertically aligned with one of the first receiving grooves. And an exit section that communicates with the entry section and is adjacent to the second wafer carrier and is vertically aligned with one of the second receiving slots, the vertical height of the entry sections is greater than the vertical height of the exit sections; A pushing mechanism is movably disposed on the base, and the pushing mechanism can be controlled to pass through the first entrance of the first wafer carrier to push the first receptacles aligned with the second receptacles. The wafers in the slot, so that the wafers enter the guide inlet of the first guide frame of the guide unit from the first accommodation slot through the first outlet through the first guide A guide groove and exit from the guide exit, and finally move into the second accommodating grooves through the second inlet of the second wafer carrier; and a height adjustment mechanism provided on the base and including a first A bottom plate and a second bottom plate, the height of the first bottom plate is less than the height of the second bottom plate, and the first bottom plate And one of the second base plate is disposed on the base and connected to the side walls, the first base plate can carry the first wafer carrier so that the first wafer carrier is positioned at a first height position, and the second base plate The first wafer carrier can be carried so that the first wafer carrier is positioned at a second height position higher than the first height position, thereby the first wafer carrier can be at the first height position and the Adjust and change between the second height positions. When the first wafer carrier is at the first height position, all the receiving grooves of one of the first wafer carrier and the second wafer carrier and the other one The positions of a part of the receiving slots are aligned with each other, and the positions of the first guiding slots, the first receiving slots and the second receiving slots of the first guide frame are aligned with each other. When the tool is in the second height position, the positions of all the receiving grooves of one of the first wafer carrier and the second wafer carrier and the other part of the receiving grooves of the other are aligned with each other, and the first guide Positions of the first guide grooves, the first receiving grooves, and the second receiving grooves of the rack Align with each other. 如請求項1所述的晶圓轉換裝置,其中,該第一導引架包括兩個相間隔且位於該第一晶圓載具及該第二晶圓載具之間的側壁,每一側壁具有一內壁面,該等內壁面彼此相互面對,該等內壁面形成有該等第一導引槽,該等側壁界定出該導引入口及該導引出口。The wafer conversion device according to claim 1, wherein the first guide frame includes two side walls spaced apart and located between the first wafer carrier and the second wafer carrier, and each side wall has a An inner wall surface that faces each other, the inner wall surfaces are formed with the first guide grooves, and the side walls define the guide inlet and the guide outlet. 如請求項2所述的晶圓轉換裝置,其中,該第一導引架還包括一把手,該把手的兩端分別連接該等側壁。The wafer conversion device according to claim 2, wherein the first guide frame further includes a handle, and two ends of the handle are respectively connected to the side walls. 如請求項1所述的晶圓轉換裝置,其中,該導引單元還包括一設置於該基座的第二導引架,該第二導引架包括多個垂直間隔排列且分別與該等第二容置槽及該等第一導引槽的該等出口段對齊的第二導引槽。The wafer conversion device according to claim 1, wherein the guide unit further includes a second guide frame disposed on the base, and the second guide frame includes a plurality of vertically spaced arrays arranged separately from the second guide frame. The second receiving grooves and the second guiding grooves in which the exit sections of the first guiding grooves are aligned. 如請求項2所述的晶圓轉換裝置,其中,該第一導引架還包括至少一設置於該等側壁的限位件,該限位件適用於定位該第一晶圓載具或該第二晶圓載具。The wafer conversion device according to claim 2, wherein the first guide frame further includes at least one stopper disposed on the sidewalls, and the stopper is suitable for positioning the first wafer carrier or the first wafer carrier. Two wafer carriers. 如請求項1所述的晶圓轉換裝置,其中,該導引單元還包括一設置於該基座的第二導引架,該第二導引架包括多個垂直間隔排列且分別與該等第一容置槽及該等第一導引槽的該等入口段對齊的第二導引槽。The wafer conversion device according to claim 1, wherein the guide unit further includes a second guide frame disposed on the base, and the second guide frame includes a plurality of vertically spaced arrays arranged separately from the second guide frame. The first receiving grooves and the second guide grooves in which the inlet sections of the first guide grooves are aligned. 如請求項1至6中任一項所述的晶圓轉換裝置,其中,每一第一導引槽的入口段具有一朝向該第一晶圓載具的第一端及一連通該出口段的第二端,該入口段的垂直高度自該第一端至該第二端漸縮。The wafer conversion device according to any one of claims 1 to 6, wherein an entrance section of each first guide groove has a first end facing the first wafer carrier and an exit section communicating with the exit section. At the second end, the vertical height of the inlet section tapers from the first end to the second end. 如請求項7所述的晶圓轉換裝置,其中,每一第一導引槽的該入口段的該第一端的垂直高度大於每一第一容置槽的垂直高度。The wafer conversion device according to claim 7, wherein a vertical height of the first end of the entrance section of each first guide groove is greater than a vertical height of each first receiving groove. 如請求項8所述的晶圓轉換裝置,其中,每一第一導引槽的該出口段的垂直高度不大於每一第二導引槽的垂直高度。The wafer conversion device according to claim 8, wherein a vertical height of the exit section of each first guide groove is not greater than a vertical height of each second guide groove. 如請求項7所述的晶圓轉換裝置,其中,每一第一導引槽的該入口段的長度不小於該出口段的長度。The wafer conversion device according to claim 7, wherein a length of the entry section of each first guide groove is not less than a length of the exit section. 如請求項10所述的晶圓轉換裝置,其中,每一第一導引槽的該出口段的長度為每一晶圓的直徑的15%-20%。The wafer conversion device according to claim 10, wherein a length of the exit section of each first guide groove is 15% -20% of a diameter of each wafer. 如請求項7所述的晶圓轉換裝置,其中,每一出口段具有一連通該入口段的第一部分及一連通該第一部分及該導引出口的第二部分,該第二部分的垂直高度自遠離該第一部分的一端至鄰近該第一部分的一端漸縮,該第二部分具有一位於鄰近該第一部分的一端的夾角,該夾角介於10-15度之間。The wafer conversion device according to claim 7, wherein each exit section has a first portion communicating with the inlet section and a second portion communicating with the first portion and the guide exit, and a vertical height of the second portion The tapered portion is tapered from an end far from the first portion to an end adjacent to the first portion, and the second portion has an included angle at an end adjacent to the first portion, and the included angle is between 10-15 degrees. 如請求項7所述的晶圓轉換裝置,其中,每一第一導引槽的該入口段具有一位於該第二端的夾角,該夾角介於10-15度之間。The wafer conversion device according to claim 7, wherein the entrance section of each first guide groove has an included angle at the second end, and the included angle is between 10-15 degrees. 如請求項2所述的晶圓轉換裝置,其中,該等內壁面凹陷形成有該等第一導引槽,每一第一導引槽凹陷的深度為每一晶圓的直徑的10%-15%。The wafer conversion device according to claim 2, wherein the inner wall surfaces are recessed with the first guide grooves, and the depth of each first guide groove depression is 10% of the diameter of each wafer- 15%.
TW107119423A 2018-06-06 2018-06-06 Wafer conversion device TWI680526B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW107119423A TWI680526B (en) 2018-06-06 2018-06-06 Wafer conversion device
CN201910125520.8A CN110571178B (en) 2018-06-06 2019-02-20 Wafer conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW107119423A TWI680526B (en) 2018-06-06 2018-06-06 Wafer conversion device

Publications (2)

Publication Number Publication Date
TWI680526B true TWI680526B (en) 2019-12-21
TW202002138A TW202002138A (en) 2020-01-01

Family

ID=68772823

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107119423A TWI680526B (en) 2018-06-06 2018-06-06 Wafer conversion device

Country Status (2)

Country Link
CN (1) CN110571178B (en)
TW (1) TWI680526B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114834672B (en) * 2022-06-28 2022-09-20 江苏美信光电科技有限公司 Liquid crystal sheet packaging device with positioning structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201163620Y (en) * 2008-01-31 2008-12-10 中芯国际集成电路制造(上海)有限公司 Crystal boat converter capable of improving transfer flexibility
TW201529444A (en) * 2013-12-20 2015-08-01 Centrotherm Photovoltaics Ag Wafer boat and apparatus for treating semiconductor wafers
TWM509417U (en) * 2015-04-30 2015-09-21 Globalwafers Co Ltd Wafer conversion device
TW201639059A (en) * 2015-04-30 2016-11-01 Globalwafers Co Ltd Wafer transfer apparatus and wafer transfer method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58178535A (en) * 1982-04-13 1983-10-19 Nec Kyushu Ltd Transfer device for semiconductor substrate
JPS60250641A (en) * 1984-05-25 1985-12-11 Nec Corp Wafer transferring device
FR2680503B1 (en) * 1991-08-20 1997-07-11 Photowatt Int DEVICE FOR TRANSFERRING PLATES, ESPECIALLY SILICON PLATES.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201163620Y (en) * 2008-01-31 2008-12-10 中芯国际集成电路制造(上海)有限公司 Crystal boat converter capable of improving transfer flexibility
TW201529444A (en) * 2013-12-20 2015-08-01 Centrotherm Photovoltaics Ag Wafer boat and apparatus for treating semiconductor wafers
TWM509417U (en) * 2015-04-30 2015-09-21 Globalwafers Co Ltd Wafer conversion device
TW201639059A (en) * 2015-04-30 2016-11-01 Globalwafers Co Ltd Wafer transfer apparatus and wafer transfer method thereof

Also Published As

Publication number Publication date
CN110571178A (en) 2019-12-13
CN110571178B (en) 2022-03-04
TW202002138A (en) 2020-01-01

Similar Documents

Publication Publication Date Title
CN216288355U (en) Wafer transfer system
TWI663671B (en) Wafer conversion device and wafer conversion method
JP5594264B2 (en) Secondary battery restraint device
TWI680526B (en) Wafer conversion device
KR20160107570A (en) Apparatus for aligning secondary battery cell
TWI677935B (en) Wafer conversion device
CN116873516B (en) Chip material pipe steering mechanism
US9616575B2 (en) Device for removing plate-shaped elements with fourth lever
CN111696901B (en) Wafer conversion device
TWI474427B (en) Wafer transfer
KR102189288B1 (en) Die bonding apparatus
TWM509417U (en) Wafer conversion device
KR20100106096A (en) Apparatus for transferring a tray and test handler including the same
US10734349B2 (en) Apparatus and method for packaging components
KR102143715B1 (en) Taping system and taping method
KR100395368B1 (en) Auto Loader for stacking tray in handler
CN108673077B (en) Ammeter module mounting device and method
JP2002181891A (en) Device for loading automatically device sleeve of handler
CN105990199B (en) Substrate transfer module in semiconductor device
CN113611642B (en) Silicon wafer bearing device and separation equipment
KR20110003610A (en) Plural wafer transferring machine and method using the same
KR102575958B1 (en) Apparatus for transferring wafer ring
KR102279739B1 (en) A lens barrel carrying method for sorting-gathering apparatus
JPH0615392A (en) Stack pin holder circulating device in heat exchanger assembling device
CN105514004B (en) A kind of diffusing quartz boat wafer-handling device