TWI680114B - 用於抑制電磁干擾之元件及用於製造抑制電磁干擾之元件之方法 - Google Patents
用於抑制電磁干擾之元件及用於製造抑制電磁干擾之元件之方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000001629 suppression Effects 0.000 title description 4
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 52
- 239000000843 powder Substances 0.000 claims abstract description 42
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 11
- 150000003624 transition metals Chemical class 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
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- 238000003825 pressing Methods 0.000 claims description 5
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- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 2
- 238000005259 measurement Methods 0.000 description 18
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- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
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- 229910052709 silver Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
本發明係有關於一種由具有六方晶體結構之鐵氧體粉末構成的用於抑制電磁干擾之元件，其中該鐵氧體粉末具有組成SrxFe12-yCyOz，其中C為元素週期表中之過渡金屬。
Description
本發明係有關於一種由具有六方晶體結構之鐵氧體粉末構成的用於抑制電磁干擾之元件。本發明亦有關於一種用於製造抑制電磁干擾之元件之方法。
德國專利申請公開案DE 10 2014 001 616 A1揭露具有六方晶體結構之鐵氧體材料在用於抑制電磁干擾之元件中之應用。此等鐵氧體材料可包含鍶、鋇、鈷及鋇。建議以層製品、殼體及燒結體之形式使用此類具有六方晶體結構之鐵氧體材料。該案以介於1GHz與100GHz間之頻率範圍說明其應用。
本發明之目的在於創造一種經改良的、由具有六方晶體結構之鐵氧體粉末構成的用於抑制電磁干擾之元件，以及提供一種用於製造此元件之方法。
為此，本發明提出一種具有請求項1之特徵的用於抑制電磁干擾之元件以及一種具有請求項7之特徵的用於製造此元件之方法。本發明進一步
之有益方案包含於附屬請求項中。
本發明提出一種由具有六方晶體結構之鐵氧體粉末構成的用於抑制電磁干擾之元件，其中該鐵氧體粉末具有組成SrxFe12-yCyOz，其中C為元素週期表中之過渡金屬。
就鐵氧體粉末之可加工性以及就鐵氧體粉末之吸收頻率範圍而言，該鐵氧體粉末之此種組成被證實為特別有利。z的值例如可為19，使得該鐵氧體粉末具有組成SrxFe12-yCyO19。
根據本發明之進一步的技術方案，C為元素週期表之第4、5、9或10屬中之過渡金屬。
根據本發明之進一步的技術方案，x係介於0.9與1之間，且特別是為1。
根據本發明之進一步的技術方案，y係介於0.1與0.8，特別是介於0.2與0.5，較佳介於0.3與0.4之間。
根據本發明之進一步的技術方案，該鐵氧體粉末之粒度係介於50μm與100μm，較佳介於75μm與100μm之間。
該鐵氧體粉末之粒度可對鐵氧體粉末之電磁特性產生影響。其中介於75μm與100μm間之粒度被證實為對電磁特性特別有利。但為改良該元件之製造中之製程穩定性，較佳將該粉末之粒度減小至一介於50μm與75μm間之值。
根據本發明之進一步的技術方案，該元件係構建為半殼、板件、套筒、環件或者具有通孔的塊狀件。
大體上可將本發明之元件塑造成任意形狀。特定言之，將該鐵氧體粉末作為塗層施覆，或者與其他同為該元件之組分的材料混合。尤佳將該
鐵氧體粉末燒結來製造本發明之元件。
本發明之元件例如可由該鐵氧體粉末壓製而成。其中可使用乾壓法。隨後藉由燒結將經壓製之形狀壓縮。例如可在1100℃至1400℃下實施該燒結操作。
在本發明之方法中，用由Sr碳酸鹽或Sr氧化物、Fe氧化物與過渡金屬之氧化物構成之混合物製造該鐵氧體粉末。
根據本發明之進一步的技術方案，將該混合物加熱至一介於1100℃與1400℃間之溫度。
藉由此種煅燒在1100℃至1400℃的溫度範圍內進行固體反應，其中形成六方鐵氧體。
根據本發明之進一步的技術方案，將該混合物研磨，從而對粒度進行調整。較佳在研磨過程中將該粒度調節至一介於50μm與100μm間之值，其中例如介於75μm與100μm間之較大粒度被證實為對該鐵氧體粉末之電磁特性有利。可對該鐵氧體粉末進行乾壓來製造該元件。但為改良燒結過程中之製程穩定性，較佳將該粒度減小至一介於50μm與75μm間之值。
10‧‧‧用於抑制電磁干擾之元件
12‧‧‧殼體
14‧‧‧溝槽/溝槽形元件
20‧‧‧元件
22‧‧‧線路
30‧‧‧套管形元件
32‧‧‧中央通孔
40‧‧‧板形元件
50‧‧‧扁環形元件
52‧‧‧高頻電纜，高頻線路
54‧‧‧信號發生器
56‧‧‧天線
本發明之其他特徵與優點包含於申請專利範圍及下文聯繫圖式對本發明之較佳實施方式所作之說明中。其中所圖示並予以說明之不同實施方式的單項特徵可在不超越本發明範圍之情況下任意組合。其中：圖1為根據第一實施方式之本發明元件之傾斜俯視圖；圖2為根據第二實施方式之本發明元件之傾斜俯視圖；圖3為根據第三實施方式之本發明元件之傾斜俯視圖；
圖4為根據第四實施方式之本發明元件之傾斜俯視圖；圖5為本發明元件中之鐵氧體粉末之晶粒結構示意圖；圖6為包含本發明元件之第一實驗裝置示意圖；圖7為以圖6中不包含本發明元件之實驗裝置實施基準測量所得結果圖；圖8為以圖6中包含本發明元件在內之實驗裝置所實施之測量；圖9為包含本發明元件之第二實驗裝置示意圖；圖10為以圖9中不包含本發明元件之實驗裝置實施基準測量所得結果；及圖11為以圖9中包含本發明元件在內之實驗裝置所實施之衰減測量。
如圖1至圖4所示的用於抑制電磁干擾之元件係被用來減小非期望之電磁干擾對電子設備之影響。此類干擾既可能與電纜有關，係由導體中之干擾所引發，亦可能因電磁波射入設備饋線而產生。
目前最常見的干擾頻率處於最高達1GHz之範圍。小型化程度之增大導致器件愈來愈小，亦導致開關穩壓器提供電壓時之頻率升高。目前，其工作頻率處於一位數的MHz範圍。然而，此範圍內會出現高達250MHz而須加以抑制之諧波。提高工作頻率亦會導致諧波大幅升高至超過1GHz，從而需要對此等發射進行干擾抑制。
另外，高帶寬無線通訊需要極高之頻率。藍芽、Zigbee、WIFI以及2G、3G及4G網路之行動通訊的工作頻率處於860MHz至5GHz範圍。此等發射能夠輸入耦合至發射器之電氣組件及相鄰組件中並造成干擾。
圖1示出根據第一實施方式的用於抑制電磁干擾之元件10。元件10具
有殼體12，該殼體由塑膠構成且具有兩個可翻轉地相連之半殼。此殼體12在圖1中以展開狀態被示出，其內部設有兩個採用相同設計之溝槽14。當殼體12合攏時，兩溝槽相疊置並共同形成一套管，需要被去干擾之電纜可穿設於該套管中。
溝槽14分別由具有六方晶體結構之鐵氧體粉末構成。
使用氧化鐵及氧化鍶或碳酸鍶作為六方鐵氧體之基質。可添加一或數種元素作為摻雜劑。此等元素係透過選擇性調節取代度來影響吸收頻率範圍。
包含於溝槽形元件14中之六方鐵氧體具有公式為SrxFe12-yCyOz之化學計量。比重z可為19，從而得到公式SrxFe12-yCyO19。比重x可介於0.9與1之間，其中較佳地，x=1。y可介於0.1與0.8之間。值y較佳介於0.2與0.5之間。在值為0.3<y<0.4的情況下能夠獲得最佳測量值，故y尤佳採用此取值範圍。
元素C為週期表中之過渡金屬。序數為21至30、39至48、57至80以及89至112之化學元素被稱作過渡金屬。因此，在元素週期表之第4週期中，過渡金屬為元素Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu及Zn。在第5週期中，過渡金屬為元素Y、Zr、Nb、Mo、Tc、Ru、Rh、Pd、Ag、Cd及La。
在第6週期中，過渡金屬為元素Lu、Hf、Ta、W、Re、Os、Ir、Pt、Au、Hg以及Ac。在第7週期中，過渡金屬為元素Lr、Rf、Db、Sg、Bh、Hs、Mt、Ds、Rg以及Cn。在上述列舉中未列出序號為58至71之元素及序號為90至102之元素，但此等元素可自元素週期表查閱。
尤佳選擇週期表之第4或第5週期中之元素C。
較佳選擇元素週期表之第4、第9或第10屬中之元素C。在此尤佳為第4屬。
在元素C選自第4或第5週期的情況下，元素C或者為Ti，或者為Zr。
溝槽形元件14係用鐵氧體粉末製造，具體方式為，對鐵氧體粉末進行乾壓，隨後將其燒結。其中可對鐵氧體粉末進行預壓製，隨後在1100℃至1400℃的溫度下實施燒結。與具有相似晶體結構之硬磁體相比，在將一外部磁場施加至鐵氧體粉末的情況下，不會發生各晶粒之定向。如此便能在鐵氧體粉末之壓製中實現器件之各向同性電磁特性，並且可藉由乾壓法進行製造。由於外司疇係靜態分佈，故成品組件上之衰減特性無較佳方向。
該鐵氧體粉末係透過混氧化物路徑製造。其中將Sr碳酸鹽或Sr氧化物之粉末與Fe氧化物及摻雜劑之氧化物混合。如前文所述，尤佳將Ti或Zr用作摻雜劑。故將Ti氧化物及/或Zr氧化物加入該混合物。隨後將所產生之混合物煅燒或燃燒，其中在1100℃至1400℃的溫度下進行固體反應，其中形成鐵氧體之六方晶體結構。
隨後可藉由研磨對所產生之六方鐵氧體之粒度進行調節。較佳將粒度調節為50μm至100μm。例如可使用球磨機來實施研磨。就用於抑制電磁干擾之特性而言，介於75μm與100μm間之粒度被證實為有利。晶界會使鐵氧體之晶格畸變並對其晶場造成干擾，進而對電磁輻射之吸收產生負面作用。介於75μm與100μm間之較大粒度能夠抵抗上述作用，並實現材料在電磁輻射衰減方面的最佳效果。
如前文所述，隨後將所產生之鐵氧體粉末燒結，從而製造溝槽形元件14。其中將該鐵氧體粉末壓縮並調整至最終粒度。
圖2示出本發明元件20之另一實施方式。元件20具有由經燒結之鐵氧體粉末構成之塊形，其中該塊具有若干以供線路22穿過之通孔。
圖3示出本發明之另一呈套管形之元件30。元件30具有一以供線路穿過之中央通孔32。
圖4示出本發明之另一呈板形之元件40。元件40可用於積體電路、殼體或帶狀電纜上之平面式去干擾。例如亦可將一積體電路設於兩個元件40之間，從而實現特別有效之電磁干擾抑制。
圖5示意性示出用於製造本發明元件之鐵氧體粉末的晶粒結構。基於六方晶體結構及其較佳生長方向，該鐵氧體粉末之晶粒具有六方薄片之形狀。其中此等微晶在方向a及b上之邊長大於在方向c上之邊長。與具有相似晶體結構之硬磁體相比，施加外部磁場不會導致該鐵氧體粉末中之六方薄片之定向。故該鐵氧體粉末以及由其製造之器件具有各向同性電磁特性。因此，在製造該等元件時可藉由乾壓法加工該鐵氧體粉末。由於各晶粒中之外司疇係靜態分佈，故衰減特性無較佳方向。
圖6示出一種示例性實驗裝置，其用於確定本發明之呈扁環形元件50之衰減特性。高頻電纜52一側與信號發生器54連接，另一側與天線56連接。為透過環形元件50確定線路衰減，在EMC室中以與天線56間隔1.5m的方式實施對圖6所示實驗裝置之電磁輻射的測量。
透過經屏蔽之高頻電纜藉由信號發生器54對干擾進行輸入耦合。透過未封閉之天線56在未繪示之EMC室中模擬此干擾。在無環形元件50的情況下實施基準測量。在此情形下，此基準測量得出最大干擾放射。
若如圖6所示透過天線56推動元件50，並將其以垂直於高頻線路52及天線56的方式佈置在高頻線路52與天線56之間的過渡處上，則經信號發
生器54輸入耦合之干擾的一部分衰減，故干擾放射有所減小。採用及不採用器件50情況下的測量差值即藉由元件50實現的經輸入耦合之干擾的衰減程度。
圖7示出在不採用元件50(即該鐵氧體環)情況下的基準測量結果。而圖8示出採用元件50情況下的測量結果。例如在5GHz下，由圖7及圖8得出之測量結果之差為12.4dB的衰減。圖7及圖8未繪示出4GHz下之測量值。在此情形下，藉由圖6所示實驗裝置實現最高達9.3dB的衰減。
圖9示意性示出另一用於確定元件50(即該鐵氧體環)之衰減之實驗裝置。信號發生器54亦與高頻線路52連接，其中高頻線路52以無封閉件的方式在元件50之通孔上終止。採用無任何封閉件之高頻電纜52表示形成完全失配。亦在無元件50情況下實施一基準測量，並且在採用元件50情況下在如圖9所示位置中實施另一測量。兩個採用及不採用元件50(即該鐵氧體環)之測量之差值即藉由元件50實現的經信號發生器54輸入耦合之干擾的衰減程度。亦在EMC室中在高頻線路52之末端間隔1.5m的情況下實施測量。
圖10示出無元件50情況下之基準測量結果，圖11示出透過圖9所示包含元件50在內之實驗裝置得出之結果。
透過該二測量之差值可以得出，在5GHz頻率下能夠實現最高達14.9dB的衰減。
Claims (5)
- 一種由具有六方晶體結構之鐵氧體粉末構成的用於抑制電磁干擾之元件，其特徵在於，該鐵氧體粉末具有組成SrxFe12-yCyOz，其中C為元素週期表中之過渡金屬，其中x係介於0.9與1之間，其中y係介於0.1與0.8，且其中z為19，及其特徵在於該鐵氧體粉末之粒度係介於75μm與100μm之間。
- 如請求項1之元件，其特徵在於，C為元素週期表之第四、第五、第九或第十屬中之過渡金屬。
- 如請求項1或2之元件，其特徵在於，該元件係構建為半殼、板件、套筒、環件或者具有通孔的塊狀件。
- 一種製造如前述請求項1至3中任一項之用於抑制電磁干擾之元件之方法，其特徵在於，用由Sr碳酸鹽或Sr氧化物、Fe氧化物與過渡金屬之氧化物構成之混合物製造該鐵氧體粉末，將該混合物加熱至一介於1100℃與1400℃間之溫度，及藉由對該經煅燒之混合物進行研磨來調節粒度至一介於75μm與100μm間之值。
- 如前述請求項4之方法，其特徵在於，藉由對該鐵氧體粉末進行乾壓來製造元件。
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