TWI670745B - 緊湊型致偏磁體 - Google Patents

緊湊型致偏磁體 Download PDF

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Publication number
TWI670745B
TWI670745B TW107113885A TW107113885A TWI670745B TW I670745 B TWI670745 B TW I670745B TW 107113885 A TW107113885 A TW 107113885A TW 107113885 A TW107113885 A TW 107113885A TW I670745 B TWI670745 B TW I670745B
Authority
TW
Taiwan
Prior art keywords
coils
magnet
yoke
group
coil
Prior art date
Application number
TW107113885A
Other languages
English (en)
Chinese (zh)
Other versions
TW201842523A (zh
Inventor
羅伊 E. 藍德
維托里 吉斯金
Original Assignee
美商艾瑪翠克斯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商艾瑪翠克斯股份有限公司 filed Critical 美商艾瑪翠克斯股份有限公司
Publication of TW201842523A publication Critical patent/TW201842523A/zh
Application granted granted Critical
Publication of TWI670745B publication Critical patent/TWI670745B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1475—Scanning means magnetic
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H01F7/0273—Magnetic circuits with PM for magnetic field generation
    • H01F7/0278—Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles
    • H01F7/0284—Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles using a trimmable or adjustable magnetic circuit, e.g. for a symmetric dipole or quadrupole magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/58—Arrangements for focusing or reflecting ray or beam
    • H01J29/64—Magnetic lenses
    • H01J29/66—Magnetic lenses using electromagnetic means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/70—Arrangements for deflecting ray or beam
    • H01J29/72—Arrangements for deflecting ray or beam along one straight line or along two perpendicular straight lines
    • H01J29/76—Deflecting by magnetic fields only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/04—Magnet systems, e.g. undulators, wigglers; Energisation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H01J2237/1526—For X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2806—Secondary charged particle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/266—Measurement of magnetic or electric fields in the object; Lorentzmicroscopy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Particle Accelerators (AREA)
TW107113885A 2017-04-27 2018-04-24 緊湊型致偏磁體 TWI670745B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762491122P 2017-04-27 2017-04-27
US62/491,122 2017-04-27
US15/625,921 US10290463B2 (en) 2017-04-27 2017-06-16 Compact deflecting magnet
US15/625,921 2017-06-16

Publications (2)

Publication Number Publication Date
TW201842523A TW201842523A (zh) 2018-12-01
TWI670745B true TWI670745B (zh) 2019-09-01

Family

ID=62062890

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107113885A TWI670745B (zh) 2017-04-27 2018-04-24 緊湊型致偏磁體

Country Status (7)

Country Link
US (3) US10290463B2 (enExample)
EP (2) EP3396696A1 (enExample)
JP (2) JP2018190709A (enExample)
KR (2) KR20180120603A (enExample)
CN (1) CN108807119B (enExample)
RU (1) RU2693565C1 (enExample)
TW (1) TWI670745B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10290463B2 (en) 2017-04-27 2019-05-14 Imatrex, Inc. Compact deflecting magnet
US10395887B1 (en) * 2018-02-20 2019-08-27 Technische Universiteit Delft Apparatus and method for inspecting a surface of a sample, using a multi-beam charged particle column
US10504687B2 (en) * 2018-02-20 2019-12-10 Technische Universiteit Delft Signal separator for a multi-beam charged particle inspection apparatus
US11114270B2 (en) * 2018-08-21 2021-09-07 Axcelis Technologies, Inc. Scanning magnet design with enhanced efficiency
DE102019004124B4 (de) 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
JP7531067B2 (ja) 2021-12-07 2024-08-08 株式会社日立ハイテク 多極子レンズおよび荷電粒子線装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4105890A (en) * 1976-05-03 1978-08-08 Movchan Boris Alexeevich Device for electron-beam heating of materials
US6292538B1 (en) * 1999-02-01 2001-09-18 Siemens Aktiengesellschaft X-ray tube with flying focus
JP2007280966A (ja) * 1996-08-26 2007-10-25 Ceos Corrected Electron Optical Systems Gmbh 電子光学レンズ装置
CN101523544A (zh) * 2006-10-13 2009-09-02 皇家飞利浦电子股份有限公司 电子光学设备、x射线发射装置及产生电子束的方法
US20100001204A1 (en) * 2007-03-15 2010-01-07 White Nicholas R Open-ended electromagnetic corrector assembly and method for deflecting, focusing, and controlling the uniformity of a traveling ion beam
TW201637061A (zh) * 2014-12-26 2016-10-16 艾克塞利斯科技公司 結合的多極磁鐵和雙極掃描磁鐵

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US3622679A (en) 1970-09-29 1971-11-23 Air Reduction Heating system for electron beam furnace
SU370899A1 (ru) 1971-10-26 1979-04-05 Институт Электросварки Им. Е.О. Патона Ан Украинской Сср Установка дл электроннолучевого нагрева материалов
JPS5239124B2 (enExample) * 1972-07-11 1977-10-03
JPS50117727U (enExample) 1974-03-09 1975-09-26
JPS5826616B2 (ja) 1975-08-21 1983-06-03 イケガミ ヒデツグ タキヨクジバソウチ
US4221937A (en) * 1978-08-10 1980-09-09 Fidelity-Research, Inc. Moving iron type cartridge
DE19631899A1 (de) * 1996-08-07 1998-02-12 Siemens Ag Röntgenröhre
JP3449198B2 (ja) * 1997-10-22 2003-09-22 日新電機株式会社 イオン注入装置
US6160869A (en) * 1998-10-01 2000-12-12 Imatron, Inc. Chicane magnet focusing system and deflection magnet for a scanning electron beam computed tomography system
RU2198485C1 (ru) * 2001-02-13 2003-02-10 Сумский Государственный Университет Многоканальный линейный индукционный ускоритель заряженных частиц
US6933507B2 (en) 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
EP2148524B1 (en) * 2008-05-13 2014-10-22 Hosiden Corporation Electroacoustic transducer
DE102013104778A1 (de) * 2013-05-08 2014-11-13 Ruprecht-Karls-Universität Heidelberg Vorrichtung zur Erfassung und Regelung eines durch einen Elektromagneten erzeugten Magnetfelds
JP6227294B2 (ja) * 2013-06-20 2017-11-08 惠州市大亜湾永昶電子工業有限公司 手振れ抑制機能付きレンズ駆動装置
AT516871B1 (de) * 2015-03-05 2018-03-15 Bhm Tech Produktionsgesellschaft M B H Elektromagnetischer Signalwandler für einen Knochenleitungshörer
US9793087B2 (en) 2015-09-10 2017-10-17 Varian Semiconductor Equipment Associates, Inc. Techniques and apparatus for manipulating an ion beam
US10290463B2 (en) 2017-04-27 2019-05-14 Imatrex, Inc. Compact deflecting magnet

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4105890A (en) * 1976-05-03 1978-08-08 Movchan Boris Alexeevich Device for electron-beam heating of materials
JP2007280966A (ja) * 1996-08-26 2007-10-25 Ceos Corrected Electron Optical Systems Gmbh 電子光学レンズ装置
US6292538B1 (en) * 1999-02-01 2001-09-18 Siemens Aktiengesellschaft X-ray tube with flying focus
CN101523544A (zh) * 2006-10-13 2009-09-02 皇家飞利浦电子股份有限公司 电子光学设备、x射线发射装置及产生电子束的方法
US20100001204A1 (en) * 2007-03-15 2010-01-07 White Nicholas R Open-ended electromagnetic corrector assembly and method for deflecting, focusing, and controlling the uniformity of a traveling ion beam
TW201637061A (zh) * 2014-12-26 2016-10-16 艾克塞利斯科技公司 結合的多極磁鐵和雙極掃描磁鐵

Also Published As

Publication number Publication date
KR102088144B1 (ko) 2020-03-11
US10290463B2 (en) 2019-05-14
US20190198286A1 (en) 2019-06-27
RU2693565C1 (ru) 2019-07-03
US20180315578A1 (en) 2018-11-01
US20190259565A1 (en) 2019-08-22
TW201842523A (zh) 2018-12-01
JP7022718B2 (ja) 2022-02-18
US10332718B1 (en) 2019-06-25
EP3396696A1 (en) 2018-10-31
EP3537469A1 (en) 2019-09-11
JP2019149387A (ja) 2019-09-05
JP2018190709A (ja) 2018-11-29
KR20190129786A (ko) 2019-11-20
CN108807119A (zh) 2018-11-13
KR20180120603A (ko) 2018-11-06
CN108807119B (zh) 2022-01-21

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MM4A Annulment or lapse of patent due to non-payment of fees