TWI668877B - 具有擋牆的光電機構的製作方法 - Google Patents

具有擋牆的光電機構的製作方法 Download PDF

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Publication number
TWI668877B
TWI668877B TW107140201A TW107140201A TWI668877B TW I668877 B TWI668877 B TW I668877B TW 107140201 A TW107140201 A TW 107140201A TW 107140201 A TW107140201 A TW 107140201A TW I668877 B TWI668877 B TW I668877B
Authority
TW
Taiwan
Prior art keywords
retaining wall
unit
film
working surface
photoelectric
Prior art date
Application number
TW107140201A
Other languages
English (en)
Chinese (zh)
Other versions
TW202018960A (zh
Inventor
李遠智
李家銘
丁榆軒
Original Assignee
同泰電子科技股份有限公司
鷹克實業有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 同泰電子科技股份有限公司, 鷹克實業有限公司 filed Critical 同泰電子科技股份有限公司
Priority to TW107140201A priority Critical patent/TWI668877B/zh
Priority to CN201821910337.6U priority patent/CN209056486U/zh
Priority to JP2018227113A priority patent/JP6746669B2/ja
Priority to KR1020180154998A priority patent/KR102236505B1/ko
Application granted granted Critical
Publication of TWI668877B publication Critical patent/TWI668877B/zh
Publication of TW202018960A publication Critical patent/TW202018960A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Manufacture Of Switches (AREA)
  • Switches Operated By Changes In Physical Conditions (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
TW107140201A 2018-11-13 2018-11-13 具有擋牆的光電機構的製作方法 TWI668877B (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW107140201A TWI668877B (zh) 2018-11-13 2018-11-13 具有擋牆的光電機構的製作方法
CN201821910337.6U CN209056486U (zh) 2018-11-13 2018-11-20 具有挡墙的光电机构
JP2018227113A JP6746669B2 (ja) 2018-11-13 2018-12-04 隔壁を具えた光電機構の製作方法
KR1020180154998A KR102236505B1 (ko) 2018-11-13 2018-12-05 차단벽을 갖는 광전소자의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW107140201A TWI668877B (zh) 2018-11-13 2018-11-13 具有擋牆的光電機構的製作方法

Publications (2)

Publication Number Publication Date
TWI668877B true TWI668877B (zh) 2019-08-11
TW202018960A TW202018960A (zh) 2020-05-16

Family

ID=67053919

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107140201A TWI668877B (zh) 2018-11-13 2018-11-13 具有擋牆的光電機構的製作方法

Country Status (4)

Country Link
JP (1) JP6746669B2 (ja)
KR (1) KR102236505B1 (ja)
CN (1) CN209056486U (ja)
TW (1) TWI668877B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110729203B (zh) * 2019-09-27 2021-03-09 深圳赛意法微电子有限公司 一种敞开式心电图感应器封装工艺

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200729441A (en) * 2006-01-18 2007-08-01 Siliconware Precision Industries Co Ltd Semiconductor devices and fabrication method thereof
TW200816420A (en) * 2006-09-28 2008-04-01 Siliconware Precision Industries Co Ltd Sensor-type package structure and fabrication method thereof
TW201717433A (zh) * 2015-11-10 2017-05-16 億光電子工業股份有限公司 發光二極體裝置與其製作方法
TWM548360U (zh) * 2017-01-13 2017-09-01 李玟慧 高導熱發光二極體封裝結構
TW201839963A (zh) * 2017-04-20 2018-11-01 億光電子工業股份有限公司 感測模組及其製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH089745Y2 (ja) * 1990-05-31 1996-03-21 タキロン株式会社 ドットマトリクス発光表示体
JPH0654081U (ja) * 1992-12-21 1994-07-22 タキロン株式会社 発光表示体
JP2001085748A (ja) * 1999-09-14 2001-03-30 Matsushita Electric Works Ltd 発光装置
JP4826470B2 (ja) * 2006-12-28 2011-11-30 日亜化学工業株式会社 発光装置
KR101051488B1 (ko) * 2009-01-23 2011-07-25 주식회사 두성에이텍 발광 다이오드 유닛의 제조 방법과, 이 방법에 의하여 제조된 발광 다이오드 유닛
JP2010199706A (ja) * 2009-02-23 2010-09-09 Sharp Corp 照度検知機能付き近接センサおよび電子機器
KR20130096094A (ko) * 2012-02-21 2013-08-29 엘지이노텍 주식회사 발광소자 패키지, 발광 소자 패키지 제조방법 및 이를 구비한 조명 시스템
KR101842938B1 (ko) * 2016-07-04 2018-05-14 대덕지디에스 주식회사 캐비티기판 제조방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200729441A (en) * 2006-01-18 2007-08-01 Siliconware Precision Industries Co Ltd Semiconductor devices and fabrication method thereof
TWI290763B (en) * 2006-01-18 2007-12-01 Siliconware Precision Industries Co Ltd Semiconductor devices and fabrication method thereof
TW200816420A (en) * 2006-09-28 2008-04-01 Siliconware Precision Industries Co Ltd Sensor-type package structure and fabrication method thereof
TWI305036B (en) * 2006-09-28 2009-01-01 Siliconware Precision Industries Co Ltd Sensor-type package structure and fabrication method thereof
TW201717433A (zh) * 2015-11-10 2017-05-16 億光電子工業股份有限公司 發光二極體裝置與其製作方法
TWI655791B (zh) * 2015-11-10 2019-04-01 億光電子工業股份有限公司 發光二極體裝置與其製作方法
TWM548360U (zh) * 2017-01-13 2017-09-01 李玟慧 高導熱發光二極體封裝結構
TW201839963A (zh) * 2017-04-20 2018-11-01 億光電子工業股份有限公司 感測模組及其製造方法

Also Published As

Publication number Publication date
KR20200068257A (ko) 2020-06-15
CN209056486U (zh) 2019-07-02
TW202018960A (zh) 2020-05-16
JP2020080295A (ja) 2020-05-28
JP6746669B2 (ja) 2020-08-26
KR102236505B1 (ko) 2021-04-06

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