CN209056486U - 具有挡墙的光电机构 - Google Patents
具有挡墙的光电机构 Download PDFInfo
- Publication number
- CN209056486U CN209056486U CN201821910337.6U CN201821910337U CN209056486U CN 209056486 U CN209056486 U CN 209056486U CN 201821910337 U CN201821910337 U CN 201821910337U CN 209056486 U CN209056486 U CN 209056486U
- Authority
- CN
- China
- Prior art keywords
- barricade
- film
- substrate
- windowing
- retaining wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000005622 photoelectricity Effects 0.000 claims description 17
- 238000004020 luminiscence type Methods 0.000 claims description 11
- 239000000084 colloidal system Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Manufacture Of Switches (AREA)
- Switches Operated By Changes In Physical Conditions (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
本实用新型提供一种具有挡墙的光电机构，包括：一基板；一挡墙膜，层合于该基板的一工作面，该挡墙膜具有至少一开窗以露出该工作面；以及至少一光电单元，设置于该工作面且位于该至少一开窗内，该光电单元为发光单元及感光单元其中一者，且该挡墙膜高于该光电单元。藉此，所形成的挡墙精度高，加工成本得以下降，且光电机构的电路设计自由度得以提高，即便修改开窗位置或形状，也不须如先前技术般重新制作或修改模具。
Description
技术领域
本实用新型是关于一种光电机构，特别是关于一种具有挡墙而可遮挡光线的光电机构。
背景技术
现有的光传感器包括一发光单元及一感光单元，发光单元所发射的光线被侦测物反射后，可由感光单元接收并输出一感测信号。为了避免发光单元所发出的光线直接传递到感光单元，现有的光传感器会在发光单元与感光单元之间设置挡墙，让发光单元只在预定的方向发出光线，并让感光单元只感测来自预定方向的光线，藉此增加光传感器的可靠度。
现有光传感器的挡墙多是通过射出成型(injection molding)等模塑方式来形成，但此制程有其不足在于：(1)易有溢胶问题，因而降低良率；(2)易因模塑偏移(moldshift)而影响精度，且不利小型化；(3)需针对不同挡墙造型分别制作模具，因而增加成本。
实用新型内容
本实用新型所要解决的技术问题在于提供一种可提高精度并降低成本的光电机构制程。
为了达成上述的目的，本实用新型提供一种具有挡墙的光电机构，包括：一基板；一挡墙膜，层合于该基板的一工作面，该挡墙膜具有至少一开窗以露出该工作面；以及至少一光电单元，设置于该工作面且位于该至少一开窗内，该光电单元为发光单元及感光单元其中一者，且该挡墙膜高于该光电单元。
藉此，所形成的挡墙精度高，加工成本得以下降，且光电机构的电路设计自由度得以提高，即便修改开窗位置或形状，也不须如先前技术般重新制作或修改模具。
有关本实用新型的其它功效及实施例的详细内容，配合图式说明如下。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请中记载的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1至图5为本实用新型第一实施例的制作方法示意图。
图6至图9为本实用新型第二实施例的制作方法示意图。
图10为本实用新型第二实施例所制得的光电机构的俯视图。
符号说明
10基板 11工作面
20挡墙膜 21开窗
22完全固化态的部分 23部分固化态的部分
30光电单元 40胶体
具体实施方式
在下文的实施方式中所述的位置关系，包括：上，下，左和右，若无特别指明，皆是以图式中组件绘示的方向为基准。
本实用新型是一种具有挡墙的光电机构，所述光电机构可能是发光设备、感光设备或同时具有发光与感光功能的设备，例如先前技术所述的光传感器，所述光传感器可应用于但不限于遥控器、侧距仪。
请参考图1至图3，在本实用新型的其中一实施例中，所述光电机构是依以下制作方法制得：提供一基板10，所述基板10可以是预制有电路的电路板或LED用的导线架，举例而言，基板10具有绝缘基材及形成于绝缘基材的电路结构及电接点，所述绝缘基材例如是环氧树脂、玻璃布(woven glass)、聚酯或其它常用于制作电路板基材的材质。接着，将一挡墙膜20层合于基板10的一工作面11，该挡墙膜20具有至少一开窗21(本实施例的开窗数为二)，开窗21是在挡墙膜20层合于基板10后，以雷射切割方式形成，工作面11可经由开窗21裸露，开窗21内可以涵盖前述电路结构或电接点。在可能的实施方式中，挡墙膜20的主要成分为环氧树脂，且挡墙膜20在层合于基板10前，全部为部分固化态(partial curingstage)，亦即挡墙膜20中的高分子局部但未完全交联，而在挡墙膜20层合于基板10后，才通过热硬化、光硬化将挡墙膜20转化为完全固化态(full curing stage)，使挡墙膜20内的高分子实质上完全交联，完全固化态的挡墙膜具有类似于先前所述的光传感器的挡墙的遮挡光线的功能。在可能的实施方式中，部分固化态的挡墙膜20在层合于基板10前，是形成于一承载膜上，承载膜在挡墙膜20层合于基板10后被移除，所述承载膜可为聚乙烯对苯二甲酸酯(PET)或其它聚酯薄膜、聚酰亚胺薄膜、聚酰胺酰亚胺薄膜、聚丙烯薄膜、聚苯乙烯薄膜。在可能的实施方式中，挡墙膜20为黑色而可吸收大部分的光线。
接着，请参考图4，于各开窗21内设置一光电单元30，光电单元30为发光单元及感光单元其中一者，本实施例中，位于第4图右侧的光电单元为发光单元，位于第4图左侧的光电单元为感光单元，且挡墙膜20高于光电单元以阻挡光线，必要时，光电单元30与基板10上的电路结构或电接点形成电性连接，所述电性连接例如是通过打线接合(wire bonding)实现；在光电单元为覆晶LED的场合或其它适当的情形中，可以省略打线接合步骤。发光单元例如为LED，感光单元例如为CCD或CMOS，发光单元用以发射光线，感光单元用以感测光线，所述光线可为可见光或不可见光，例如红外线。
接着，请参考图5，于开窗内点胶，所点的胶体40为可透光胶体，例如透明胶或荧光胶，用以保护所述光电单元及/或用以发出预选波长的光线，亦即，所制得的光电机构具有一基板10、一具有至少一开窗21的挡墙膜20层合于基板10的工作面11、至少一形成于工作面11上并位于开窗21内的光电单元30、及一形成于开窗21内的胶体40，且胶体40包覆光电单元30。
请参考图6至图10，在本实用新型另一实施例中，该光电机构的制作方法与前述实施例不同之处在于，挡墙膜20在层合于基板10前，具有完全固化态的部分22与部分固化态的部分23，完全固化态的部分22后续并不接触工作面11，部分固化态的部分23则会在层合后接触工作面11；并且，本实施例的挡墙膜20在层合于基板10前，更利用钻孔或其它方式形成所述开窗21，开窗21贯穿完全固化态的部分22及部分固化态的部分23；当挡墙膜20层合于基板10后，才通过热硬化、光硬化将部分固化态的部分23转化为完全固化态(fullcuring stage)。本实施例中，部分固化态的部分具有如同黏胶的功能，用以在热硬化、光硬化过程中使挡墙膜20固定于基板10上。在可能的实施方式中，完全固化态的部分22、部分固化态的部分23及基板10的绝缘基材由相同的材质制成，藉此让基板10与挡墙膜20具有相同的热膨胀系数，有助于后续热处理时避免产生裂纹(cracking)，提高制程的信赖性。
以上所述的实施例及/或实施方式，仅是用以说明实现本实用新型技术的较佳实施例及/或实施方式，并非对本实用新型技术的实施方式作任何形式上的限制，任何本领域技术人员，在不脱离本实用新型内容所公开的技术手段的范围，当可作些许的更动或修饰为其它等效的实施例，但仍应视为与本实用新型实质相同的技术或实施例。
Claims (4)
1.一种具有挡墙的光电机构，其特征在于，包括：
一基板；
一挡墙膜，层合于该基板的一工作面，该挡墙膜具有至少一开窗以露出该工作面；以及
至少一光电单元，设置于该工作面且位于该至少一开窗内，该光电单元为发光单元及感光单元其中一者，且该挡墙膜高于该光电单元。
2.如权利要求1所述的具有挡墙的光电机构，其特征在于，在该挡墙膜甫层合于该工作面时，该挡墙膜的至少一部份为部分固化态，且该挡墙膜的部分固化态的部分接触该工作面。
3.如权利要求2所述的具有挡墙的光电机构，其特征在于，在该挡墙膜甫层合于该工作面时，该挡墙膜的一部份为完全固化态，且该挡墙膜的完全固化态的部分不接触该工作面。
4.如权利要求1或2所述的具有挡墙的光电机构，其特征在于，更包括一胶体，设于该至少一开窗内并包复该光电单元。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107140201 | 2018-11-13 | ||
| TW107140201A TWI668877B (zh) | 2018-11-13 | 2018-11-13 | 具有擋牆的光電機構的製作方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209056486U true CN209056486U (zh) | 2019-07-02 |
Family
ID=67053919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821910337.6U Active CN209056486U (zh) | 2018-11-13 | 2018-11-20 | 具有挡墙的光电机构 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6746669B2 (zh) |
| KR (1) | KR102236505B1 (zh) |
| CN (1) | CN209056486U (zh) |
| TW (1) | TWI668877B (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729203A (zh) * | 2019-09-27 | 2020-01-24 | 深圳赛意法微电子有限公司 | 一种敞开式心电图感应器封装工艺 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH089745Y2 (ja) * | 1990-05-31 | 1996-03-21 | タキロン株式会社 | ドットマトリクス発光表示体 |
| JPH0654081U (ja) * | 1992-12-21 | 1994-07-22 | タキロン株式会社 | 発光表示体 |
| JP2001085748A (ja) * | 1999-09-14 | 2001-03-30 | Matsushita Electric Works Ltd | 発光装置 |
| TWI290763B (en) * | 2006-01-18 | 2007-12-01 | Siliconware Precision Industries Co Ltd | Semiconductor devices and fabrication method thereof |
| TWI305036B (en) * | 2006-09-28 | 2009-01-01 | Siliconware Precision Industries Co Ltd | Sensor-type package structure and fabrication method thereof |
| JP4826470B2 (ja) * | 2006-12-28 | 2011-11-30 | 日亜化学工業株式会社 | 発光装置 |
| KR101051488B1 (ko) * | 2009-01-23 | 2011-07-25 | 주식회사 두성에이텍 | 발광 다이오드 유닛의 제조 방법과, 이 방법에 의하여 제조된 발광 다이오드 유닛 |
| JP2010199706A (ja) * | 2009-02-23 | 2010-09-09 | Sharp Corp | 照度検知機能付き近接センサおよび電子機器 |
| KR20130096094A (ko) * | 2012-02-21 | 2013-08-29 | 엘지이노텍 주식회사 | 발광소자 패키지, 발광 소자 패키지 제조방법 및 이를 구비한 조명 시스템 |
| TWI655791B (zh) * | 2015-11-10 | 2019-04-01 | 億光電子工業股份有限公司 | 發光二極體裝置與其製作方法 |
| KR101842938B1 (ko) * | 2016-07-04 | 2018-05-14 | 대덕지디에스 주식회사 | 캐비티기판 제조방법 |
| TWM548360U (zh) * | 2017-01-13 | 2017-09-01 | 李玟慧 | 高導熱發光二極體封裝結構 |
| TWI733289B (zh) * | 2017-04-20 | 2021-07-11 | 億光電子工業股份有限公司 | 感測模組及其製造方法 |
-
2018
- 2018-11-13 TW TW107140201A patent/TWI668877B/zh active
- 2018-11-20 CN CN201821910337.6U patent/CN209056486U/zh active Active
- 2018-12-04 JP JP2018227113A patent/JP6746669B2/ja active Active
- 2018-12-05 KR KR1020180154998A patent/KR102236505B1/ko active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729203A (zh) * | 2019-09-27 | 2020-01-24 | 深圳赛意法微电子有限公司 | 一种敞开式心电图感应器封装工艺 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202018960A (zh) | 2020-05-16 |
| JP2020080295A (ja) | 2020-05-28 |
| JP6746669B2 (ja) | 2020-08-26 |
| KR20200068257A (ko) | 2020-06-15 |
| TWI668877B (zh) | 2019-08-11 |
| KR102236505B1 (ko) | 2021-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI584452B (zh) | 可回焊之光電模組 | |
| JP5327980B2 (ja) | シールドとレンズが改良された光学式近接センサ | |
| TWI587491B (zh) | 光電模組 | |
| TWI452672B (zh) | 層疊封裝（ｐａｃｋａｇｅ－ｏｎ－ｐａｃｋａｇｅ）光學近接感測器 | |
| CN105679753B (zh) | 光学模块、其制造方法及电子装置 | |
| KR20110001987A (ko) | 광학 근접 센서 및 그 제조 방법 | |
| CN105206627A (zh) | 光传感器及其制造方法 | |
| CN106653742B (zh) | 邻近传感器、电子设备以及制造邻近传感器的方法 | |
| TW201515251A (zh) | 包含位於光發射元件及光檢測元件之間之非透明隔離構件之光電模組 | |
| CN112017976B (zh) | 光电传感器封装结构制作方法和光电传感器封装结构 | |
| EP2082441A1 (en) | Cover for optoelectronic components | |
| CN209056486U (zh) | 具有挡墙的光电机构 | |
| US11990557B2 (en) | Miniaturized optical sensor package and manufacturing method thereof | |
| CN111180346B (zh) | 具有挡墙的光电机构的制作方法 | |
| CN104051449A (zh) | 光学距离感测装置及其组装方法 | |
| CN205016524U (zh) | 邻近传感器和电子设备 | |
| CN111694107A (zh) | 一种光模块 | |
| CN114325641A (zh) | 光感应芯片及其制造方法、激光雷达及电子设备 | |
| CN112216599A (zh) | 多次光固化一次蚀刻形成光学挡墙的方法及光学挡墙结构 | |
| TWM590214U (zh) | 光學擋牆結構 | |
| CN209963020U (zh) | 光学挡墙结构 | |
| TWI634648B (zh) | 光感測器的製造方法 | |
| CN209963083U (zh) | 光学挡墙结构 | |
| JP2009016698A (ja) | フォトリフレクタ | |
| JP2626760B2 (ja) | 光回路基板の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |