TWI666339B - Plasma coating device - Google Patents

Plasma coating device Download PDF

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Publication number
TWI666339B
TWI666339B TW107129161A TW107129161A TWI666339B TW I666339 B TWI666339 B TW I666339B TW 107129161 A TW107129161 A TW 107129161A TW 107129161 A TW107129161 A TW 107129161A TW I666339 B TWI666339 B TW I666339B
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plasma
nozzle
precursor
coating device
rotary nozzle
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TW107129161A
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TW202009323A (en
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徐逸明
王立民
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馗鼎奈米科技股份有限公司
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Priority to TW107129161A priority Critical patent/TWI666339B/en
Priority to CN201910073881.2A priority patent/CN110846640A/en
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Publication of TW202009323A publication Critical patent/TW202009323A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

一種電漿鍍膜裝置。此電漿鍍膜裝置包含常壓電漿產生器以及至少一進料治具。常壓電漿產生器包含管狀電極以及旋轉噴嘴。旋轉噴嘴設於管狀電極之底部。旋轉噴嘴具有電漿噴口以及外側面,且外側面之下部之外徑由管狀電極之底部往電漿噴口的方向漸縮。進料治具設於旋轉噴嘴之外側面之外圍。進料治具包含至少一前驅物噴口。進料治具配置以經由前驅物噴口朝旋轉噴嘴之外側面之下部噴射鍍膜前驅物。電漿噴口噴出電漿時會在電漿噴口附近形成低壓區,鍍膜前驅物被低壓區吸引而順著旋轉噴嘴之外側面之下部流至電漿噴口前來與電漿反應。 A plasma coating device. The plasma coating device includes an ordinary piezoelectric plasma generator and at least one feeding fixture. The normal piezoelectric slurry generator includes a tubular electrode and a rotating nozzle. A rotary nozzle is provided at the bottom of the tubular electrode. The rotating nozzle has a plasma nozzle and an outer surface, and the outer diameter of the lower part of the outer surface is gradually reduced from the bottom of the tubular electrode to the plasma nozzle. The feeding jig is provided on the periphery of the outer side of the rotating nozzle. The feeding fixture includes at least one precursor spout. The feeding jig is configured to spray the coated precursor toward the lower portion of the outer side of the rotary nozzle through the precursor nozzle. When the plasma nozzle ejects the plasma, a low-pressure area is formed near the plasma nozzle. The coating precursor is attracted by the low-pressure area and flows along the lower side of the outer side of the rotating nozzle to the plasma nozzle to react with the plasma.

Description

電漿鍍膜裝置 Plasma coating device

本發明是有關於一種電漿裝置,且特別是有關於一種電漿鍍膜裝置。 The invention relates to a plasma device, and more particularly to a plasma coating device.

大氣電漿的應用非常廣泛,其可應用在工件的表面處理、表面改質、以及鍍膜上。特別是大氣電漿中的噴射式電漿(plasma jet)。由於噴射式電漿的電漿密度高,且處理效果好、處理成本低,因此目前噴射式電漿已有很多的工業應用。 The application of atmospheric plasma is very wide, and it can be applied to the surface treatment, surface modification, and coating of workpieces. Especially the plasma jet in atmospheric plasma. Due to the high plasma density of the spray plasma, the good treatment effect and the low cost, there are many industrial applications of the spray plasma.

隨著大氣電漿技術的蓬勃發展,現已開發出旋轉式的大氣電漿設備,來增加大氣電漿之處理面積、與降低被處理工件的溫度,藉以大幅提升大氣電漿的處理速度,並提高大氣電漿對工件材料的適用範圍。 With the vigorous development of atmospheric plasma technology, rotary atmospheric plasma equipment has been developed to increase the processing area of atmospheric plasma and reduce the temperature of the processed workpieces, thereby greatly increasing the processing speed of atmospheric plasma, and Improve the application range of atmospheric plasma to workpiece materials.

然而,目前市售的旋轉式大氣電漿設備只能使用空氣、氮氣等氧化性氣體,若是要利用旋轉式大氣電漿設備來進行沉積或鍍膜時便產生下列數個問題。首先,利用旋轉式大氣電漿設備來進行沉積或鍍膜時,需提供沉積或鍍膜的原料,但沉積或鍍膜原料若跟著空氣或氮氣等工作氣體一起進入電漿設備的內部時,容易在電漿設備的內部產生反 應,而沉積或鍍覆在電漿設備內,如此會造成電漿裝置所產生之電漿不穩,也可能使電漿與沉積或鍍膜原料提早反應而在電漿設備中就產生電漿聚合粉末,進而影響電漿鍍膜的效率與品質。其次,為了改善前述問題,一些大氣電漿技術係在電漿噴出口附近才加入沉積或鍍膜原料。雖然這樣的調整雖可確實解決此問題,但也因此使得大氣電漿設備之噴嘴的旋轉無法順利運行,而使電漿處理面積受到局限。 However, the currently available rotary atmospheric plasma equipment can only use oxidizing gases such as air and nitrogen. If the rotary atmospheric plasma equipment is to be used for deposition or coating, the following problems arise. First, when a rotary atmospheric plasma device is used for deposition or coating, the raw materials for deposition or coating need to be provided, but if the raw materials for deposition or coating enter the interior of the plasma equipment along with working gas such as air or nitrogen, it is easy to place the plasma The inside of the device reacts Deposition and plating in the plasma equipment, this will cause the plasma generated by the plasma equipment to be unstable, and it may also cause the plasma to react with the deposition or coating materials early and cause plasma polymerization in the plasma equipment. Powder, which affects the efficiency and quality of plasma coating. Secondly, in order to improve the aforementioned problems, some atmospheric plasma technologies only add deposition or coating materials near the plasma ejection outlet. Although this adjustment can definitely solve this problem, it also makes the rotation of the nozzle of the atmospheric plasma equipment unable to run smoothly, and the plasma treatment area is limited.

因此,本發明之一目的就是在提供一種電漿鍍膜裝置,其進料治具設於鄰設於旋轉噴嘴的外圍,藉此不僅可提供旋轉電漿來進行大面積鍍膜,並可降低被處理工件在鍍膜時之溫度,更可解決旋轉噴嘴及其上之管狀電極內部的鍍膜原料汙染問題,而可提升電漿的穩定度,進而可有效率地進行鍍膜作業,提高鍍膜品質。 Therefore, an object of the present invention is to provide a plasma coating device with a feeding jig located adjacent to the periphery of a rotary nozzle, thereby not only providing a rotary plasma for large-area coating, but also reducing processing The temperature of the workpiece at the time of coating can solve the problem of contamination of the coating materials inside the rotating nozzle and the tubular electrode on it, and can improve the stability of the plasma, and can effectively perform the coating operation and improve the coating quality.

根據本發明之上述目的,提出一種電漿鍍膜裝置。此電漿鍍膜裝置包含常壓電漿產生器以及至少一進料治具。常壓電漿產生器配置以產生電漿。常壓電漿產生器包含管狀電極以及旋轉噴嘴。旋轉噴嘴設於管狀電極之底部。旋轉噴嘴配置以在旋轉狀態下噴射電漿。旋轉噴嘴具有電漿噴口以及外側面,且外側面之下部之外徑由管狀電極之底部往電漿噴口的方向漸縮。至少一進料治具設於旋轉噴嘴之外側面之外圍,其中此至少一進料治具包含至少一前驅物噴口。此至少一進料治具配置以經由至少一前驅物噴口朝旋轉噴 嘴之外側面之下部噴射鍍膜前驅物。電漿噴口噴出電漿時會在電漿噴口附近形成低壓區,鍍膜前驅物被低壓區吸引而順著旋轉噴嘴之外側面之下部流至電漿噴口前來與電漿反應。 According to the above object of the present invention, a plasma coating device is provided. The plasma coating device includes an ordinary piezoelectric plasma generator and at least one feeding fixture. A normal plasma generator is configured to generate a plasma. The normal piezoelectric slurry generator includes a tubular electrode and a rotating nozzle. A rotary nozzle is provided at the bottom of the tubular electrode. The rotating nozzle is configured to spray plasma in a rotating state. The rotating nozzle has a plasma nozzle and an outer surface, and the outer diameter of the lower part of the outer surface is gradually reduced from the bottom of the tubular electrode to the plasma nozzle. At least one feeding jig is disposed on the periphery of the outer side of the rotating nozzle, wherein the at least one feeding jig includes at least one precursor nozzle. The at least one feeding jig is configured to spray toward the rotation through the at least one precursor nozzle. The coating precursor is sprayed on the lower part of the outer side of the mouth. When the plasma nozzle ejects the plasma, a low-pressure area is formed near the plasma nozzle. The coating precursor is attracted by the low-pressure area and flows along the lower side of the outer side of the rotating nozzle to the plasma nozzle to react with the plasma.

依據本發明之一實施例,上述之至少一進料治具之至少一前驅物噴口正對旋轉噴嘴之外側面之下部。 According to an embodiment of the present invention, the at least one precursor ejection port of the at least one feeding jig is directly opposite the lower part of the outer side of the rotating nozzle.

依據本發明之一實施例,上述之至少一進料治具包含環狀接合部以及環狀延伸部。環狀接合部圍設於管狀電極及/或旋轉噴嘴外,其中環狀接合部並未與旋轉噴嘴接觸。環狀延伸部自環狀接合部之底部向下延伸,其中至少一前驅物噴口設於環狀延伸部中。 According to an embodiment of the present invention, the at least one feeding jig includes an annular joint portion and an annular extension portion. The annular joint portion is enclosed outside the tubular electrode and / or the rotary nozzle, wherein the annular joint portion is not in contact with the rotary nozzle. The annular extension portion extends downward from the bottom of the annular joint portion, and at least one precursor spraying port is disposed in the annular extension portion.

依據本發明之一實施例,上述之環狀延伸部具有環狀流道,此環狀流道與至少一前驅物噴口連通。 According to an embodiment of the present invention, the above-mentioned annular extension portion has an annular flow channel, and the annular flow channel is in communication with at least one precursor ejection port.

依據本發明之一實施例,上述之至少一前驅物噴口包含複數個前驅物噴口,且這些前驅物噴口之間具有相同之間距。 According to an embodiment of the present invention, the at least one precursor ejection port includes a plurality of precursor ejection ports, and the precursor ejection ports have the same distance therebetween.

依據本發明之一實施例,上述之環狀延伸部之底面高於旋轉噴嘴之電漿噴口,且環狀延伸部之底面與旋轉噴嘴之電漿噴口之高度差等於或小於約2公分。 According to an embodiment of the present invention, the bottom surface of the annular extension is higher than the plasma nozzle of the rotary nozzle, and the height difference between the bottom surface of the annular extension and the plasma nozzle of the rotary nozzle is equal to or less than about 2 cm.

依據本發明之一實施例,上述之環狀延伸部之底面低於旋轉噴嘴之電漿噴口,且環狀延伸部之底面與旋轉噴嘴之電漿噴口之高度差小於約1公分。 According to an embodiment of the present invention, the bottom surface of the annular extension is lower than the plasma nozzle of the rotary nozzle, and the height difference between the bottom surface of the annular extension and the plasma nozzle of the rotary nozzle is less than about 1 cm.

依據本發明之一實施例,上述之旋轉噴嘴之外側面之下部為斜面。 According to an embodiment of the present invention, the lower part of the outer side of the rotary nozzle is a slope.

依據本發明之一實施例,上述之斜面之一側邊為電漿噴口之外緣。 According to an embodiment of the present invention, one of the sides of the inclined surface is the outer edge of the plasma nozzle.

依據本發明之一實施例,上述之旋轉噴嘴之外側面之下部為弧面。 According to an embodiment of the present invention, the lower portion of the outer surface of the rotary nozzle is a curved surface.

依據本發明之一實施例,上述之至少一進料治具固定於管狀電極上,且至少一進料治具不轉動。 According to an embodiment of the present invention, the at least one feeding jig is fixed on the tubular electrode, and the at least one feeding jig does not rotate.

依據本發明之一實施例,上述之管狀電極包含互相連接之上部與下部,旋轉噴嘴固定於管狀電極之下部,且管狀電極之下部與旋轉噴嘴一起旋轉。 According to an embodiment of the present invention, the above-mentioned tubular electrode includes an upper portion and a lower portion connected to each other, the rotary nozzle is fixed to a lower portion of the tubular electrode, and the lower portion of the tubular electrode rotates together with the rotary nozzle.

依據本發明之一實施例,上述之至少一進料治具包含複數個進料治具,這些進料治具圍設於管狀電極及/或旋轉噴嘴外,且這些進料治具並未與旋轉噴嘴接觸。 According to an embodiment of the present invention, the at least one feeding jig includes a plurality of feeding jigs, and the feeding jigs are surrounded by a tubular electrode and / or a rotating nozzle, and the feeding jigs are not connected with Rotating nozzle contacts.

依據本發明之一實施例,上述之至少一前驅物噴口包含複數個前驅物噴口分別位於這些進料治具之底面,且每個前驅物噴口高於旋轉噴嘴之電漿噴口,每個前驅物噴口與旋轉噴嘴之電漿噴口之高度差等於或小於約2公分。 According to an embodiment of the present invention, the at least one precursor ejection nozzle includes a plurality of precursor ejection nozzles respectively located on the bottom surface of the feeding fixtures, and each precursor ejection nozzle is higher than the plasma ejection nozzle of the rotary nozzle, and each precursor The height difference between the nozzle and the plasma nozzle of the rotating nozzle is equal to or less than about 2 cm.

依據本發明之一實施例,上述之至少一前驅物噴口包含複數個前驅物噴口分別位於這些進料治具之底面,且每個前驅物噴口低於旋轉噴嘴之電漿噴口,每個前驅物噴口與旋轉噴嘴之電漿噴口之高度差小於1約公分。 According to an embodiment of the present invention, the at least one precursor ejection nozzle includes a plurality of precursor ejection nozzles respectively located on the bottom surface of these feeding fixtures, and each precursor ejection nozzle is lower than the plasma ejection nozzle of the rotary nozzle, The height difference between the nozzle and the plasma nozzle of the rotating nozzle is less than about 1 cm.

依據本發明之一實施例,上述之鍍膜前驅物為氣體、霧氣滴、液體或粉末。 According to an embodiment of the present invention, the coating precursor is a gas, a mist droplet, a liquid, or a powder.

100‧‧‧電漿鍍膜裝置 100‧‧‧ Plasma coating device

100a‧‧‧電漿鍍膜裝置 100a‧‧‧ Plasma Coating Device

100b‧‧‧電漿鍍膜裝置 100b‧‧‧ Plasma Coating Device

110‧‧‧常壓電漿產生器 110‧‧‧Ordinary piezoelectric plasma generator

112‧‧‧電漿 112‧‧‧ Plasma

120‧‧‧管狀電極 120‧‧‧ tubular electrode

120a‧‧‧上部 120a‧‧‧upper

120b‧‧‧下部 120b‧‧‧lower

122‧‧‧腔室 122‧‧‧ Chamber

124‧‧‧底部 124‧‧‧ bottom

126‧‧‧中心軸 126‧‧‧Center axis

130‧‧‧旋轉噴嘴 130‧‧‧rotating nozzle

130a‧‧‧旋轉噴嘴 130a‧‧‧rotating nozzle

132‧‧‧外側面 132‧‧‧ outside

132a‧‧‧外側面 132a‧‧‧ outside

132b‧‧‧下部 132b‧‧‧lower

132b’‧‧‧下部 132b’‧‧‧ lower

134‧‧‧底面 134‧‧‧ Underside

136‧‧‧電漿噴口 136‧‧‧ Plasma nozzle

138‧‧‧側邊 138‧‧‧ side

140‧‧‧棒狀電極 140‧‧‧ rod electrode

150‧‧‧進料治具 150‧‧‧Feeding fixture

150a‧‧‧進料治具 150a‧‧‧Feeding fixture

152‧‧‧前驅物噴口 152‧‧‧ precursor spout

152a‧‧‧前驅物噴口 152a‧‧‧ precursor spout

154‧‧‧環狀接合部 154‧‧‧Ring junction

154b‧‧‧底部 154b‧‧‧ bottom

156‧‧‧環狀延伸部 156‧‧‧Circular extension

156b‧‧‧底面 156b‧‧‧ Underside

156c‧‧‧環狀流道 156c‧‧‧Circular runner

158‧‧‧環狀通道 158‧‧‧Circle

160‧‧‧鍍膜前驅物 160‧‧‧Coated precursor

170‧‧‧電源 170‧‧‧ Power

180‧‧‧工件基材 180‧‧‧ Workpiece substrate

182‧‧‧表面 182‧‧‧ surface

184‧‧‧鍍膜 184‧‧‧Coated

H‧‧‧高度差 H‧‧‧height difference

h‧‧‧高度差 h‧‧‧ height difference

為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:〔圖1〕係繪示依照本發明之一實施方式的一種電漿鍍膜裝置的示意圖;〔圖2〕係繪示依照本發明之一實施方式的一種電漿鍍膜裝置的示意圖;以及〔圖3〕係繪示依照本發明之一實施方式的一種電漿鍍膜裝置的示意圖。 In order to make the above and other objects, features, advantages, and embodiments of the present invention more comprehensible, the description of the drawings is as follows: [FIG. 1] A plasma coating device according to an embodiment of the present invention is shown [Fig. 2] is a schematic diagram showing a plasma coating apparatus according to an embodiment of the present invention; and [Fig. 3] is a schematic diagram showing a plasma coating apparatus according to an embodiment of the present invention.

請參照圖1,其係繪示依照本發明之一實施方式的一種電漿鍍膜裝置的示意圖。電漿鍍膜裝置100係利用電漿112與鍍膜前驅物160的反應來於工件基材180的表面182上鍍膜。電漿鍍膜裝置100主要可包含常壓電漿產生器110以及至少一進料治具150。常壓電漿產生器110係配置以產生電漿112,而進料治具150則係配置以提供鍍膜前驅物160給常壓電漿產生器110。 Please refer to FIG. 1, which is a schematic diagram of a plasma coating device according to an embodiment of the present invention. Plasma coating apparatus 100 uses a reaction of plasma 112 and coating precursor 160 to coat a surface 182 of a workpiece substrate 180. The plasma coating device 100 may mainly include an ordinary piezoelectric plasma generator 110 and at least one feeding fixture 150. The constant pressure plasma generator 110 is configured to generate a plasma 112, and the feeding fixture 150 is configured to provide a coating precursor 160 to the constant pressure plasma generator 110.

在一些實施例中,常壓電漿產生器110主要包含管狀電極120與旋轉噴嘴130。管狀電極120具有腔室122。常壓電漿產生器110之電漿112可在管狀電極120的腔室122內產生。在一些示範例子中,如圖1所示,常壓電漿產生器110更可包含棒狀電極140,其中棒狀電極140設於 管狀電極120之腔室122內。在這樣的例子中,管狀電極120又可稱為外電極,而棒狀電極140可稱為內電極。電源170的二極分別電性連接管狀電極120與棒狀電極140,藉以使管狀電極120與棒狀電極140之間產生電位差。用以產生電漿的工作氣體可導入管狀電極120之腔室122中。 In some embodiments, the piezoelectric paste generator 110 mainly includes a tubular electrode 120 and a rotating nozzle 130. The tubular electrode 120 has a chamber 122. The plasma 112 of the normal piezoelectric plasma generator 110 may be generated in the cavity 122 of the tubular electrode 120. In some exemplary examples, as shown in FIG. 1, the conventional piezoelectric plasma generator 110 may further include a rod-shaped electrode 140, wherein the rod-shaped electrode 140 is provided at Inside the chamber 122 of the tubular electrode 120. In such an example, the tubular electrode 120 may be referred to as an external electrode, and the rod-shaped electrode 140 may be referred to as an internal electrode. The two poles of the power source 170 are electrically connected to the tubular electrode 120 and the rod-shaped electrode 140 respectively, so that a potential difference is generated between the tubular electrode 120 and the rod-shaped electrode 140. The working gas used to generate the plasma may be introduced into the chamber 122 of the tubular electrode 120.

在另一些示範例子中,除了管狀電極120外,常壓電漿產生器100更包含另一管狀電極,此另一管狀電極設於管狀電極120之上方,且此另一管狀電極之腔室與管狀電極120之腔室122連通。電源170的二極分別電性連接管狀電極120與此另一管狀電極。用以產生電漿的工作氣體可導入管狀電極120之腔室122中。 In other exemplary examples, in addition to the tubular electrode 120, the ordinary piezoelectric generator 100 further includes another tubular electrode, the other tubular electrode is disposed above the tubular electrode 120, and the cavity and The chamber 122 of the tubular electrode 120 communicates. The two poles of the power source 170 are electrically connected to the tubular electrode 120 and the other tubular electrode, respectively. The working gas used to generate the plasma may be introduced into the chamber 122 of the tubular electrode 120.

旋轉噴嘴130設於管狀電極120之底部124,且旋轉噴嘴130與棒狀電極140相對。旋轉噴嘴130配置以在旋轉狀態下噴射在管狀電極120之腔室122內所產生之電漿112。旋轉噴嘴130可以管狀電極120之中心軸126為旋轉中心旋轉。旋轉噴嘴130具有外側面132與底面134,其中旋轉噴嘴130之外側面132可自管狀電極120之底部124延伸至旋轉噴嘴130之底面134,而與管狀電極120之底部124及旋轉噴嘴130的底面134接合。旋轉噴嘴130可例如具有一電漿噴口136,其中此電漿噴口136位於旋轉噴嘴130之底面134。電漿112可被旋轉噴嘴130以旋轉方式噴出電漿噴口136。電漿112氣流從旋轉噴嘴130之電漿噴口136噴出時,可在電漿噴口136附近形成低壓區。旋轉噴嘴130之外側面132的外徑可自管狀電極120之底部124往電漿噴口 136漸縮。在一些示範例子中,旋轉噴嘴130之外側面132包含下部132b,此下部132b與電漿噴口136鄰接,且下部132b的外徑可自下部132b之頂端往電漿噴口136漸縮。在圖1所示之例子中,旋轉噴嘴130之外側面132的下部132b為弧面。旋轉噴嘴130之外側面132的下部132b可較佳可例如具有流線形輪廓。 The rotary nozzle 130 is disposed on the bottom 124 of the tubular electrode 120, and the rotary nozzle 130 is opposite to the rod-shaped electrode 140. The rotary nozzle 130 is configured to spray the plasma 112 generated in the chamber 122 of the tubular electrode 120 in a rotating state. The rotating nozzle 130 can be rotated by the central axis 126 of the tubular electrode 120 as a rotation center. The rotary nozzle 130 has an outer surface 132 and a bottom surface 134, wherein the outer surface 132 of the rotary nozzle 130 can extend from the bottom 124 of the tubular electrode 120 to the bottom surface 134 of the rotary nozzle 130, and the bottom surface 124 of the tubular electrode 120 and the bottom surface of the rotary nozzle 130 134 joints. The rotary nozzle 130 may, for example, have a plasma nozzle 136, wherein the plasma nozzle 136 is located on the bottom surface 134 of the rotary nozzle 130. The plasma nozzle 112 may be ejected from the plasma nozzle 136 by the rotary nozzle 130 in a rotating manner. When the air flow of the plasma 112 is ejected from the plasma nozzle 136 of the rotary nozzle 130, a low-pressure region can be formed near the plasma nozzle 136. The outer diameter of the outer side 132 of the rotating nozzle 130 can be from the bottom 124 of the tubular electrode 120 to the plasma nozzle. 136 shrinks. In some exemplary examples, the outer surface 132 of the rotary nozzle 130 includes a lower portion 132b, which is adjacent to the plasma nozzle 136, and the outer diameter of the lower portion 132b can be tapered from the top of the lower portion 132b to the plasma nozzle 136. In the example shown in FIG. 1, the lower portion 132 b of the outer side surface 132 of the rotary nozzle 130 is an arc surface. The lower portion 132b of the outer side 132 of the rotary nozzle 130 may preferably have, for example, a streamlined profile.

進料治具150設於旋轉噴嘴130之外側面132的外圍。進料治具150的一部分可位於管狀電極120的外圍。此進料治具150包含至少一前驅物噴口152。在一些示範例子中,進料治具150之前驅物噴口152可正對旋轉噴嘴130之外側面132的下部132b。進料治具150配置以經由前驅物噴口152朝旋轉噴嘴130之外側面132的下部132b噴射鍍膜前驅物160,藉以使鍍膜前驅物160沿著旋轉噴嘴130之外側面132的下部132b流至電漿噴口136前,而與電漿噴口136所噴出之電漿112混合並反應。進料治具150與前驅物來源管線連接。鍍膜前驅物160可為氣體、霧氣滴、液體或粉末。 The feeding jig 150 is provided on the periphery of the outer side surface 132 of the rotary nozzle 130. A part of the feeding jig 150 may be located on the periphery of the tubular electrode 120. The feeding fixture 150 includes at least one precursor spout 152. In some exemplary examples, the front-loading nozzle 152 of the feeding fixture 150 may face the lower portion 132b of the outer side 132 of the rotary nozzle 130. The feeding jig 150 is configured to spray the coating precursor 160 toward the lower portion 132b of the outer side 132 of the rotary nozzle 130 through the precursor nozzle 152, so that the coated precursor 160 flows to the electric power along the lower portion 132b of the outer side 132 of the rotary nozzle 130. In front of the plasma nozzle 136, it is mixed and reacted with the plasma 112 sprayed from the plasma nozzle 136. The feed fixture 150 is connected to a precursor source pipeline. The coating precursor 160 may be a gas, a mist droplet, a liquid, or a powder.

在一些例子中,進料治具150不轉動。進料治具150可例如固定於管狀電極120上。在一些示範例子中,管狀電極120可包含上部120a與下部120b,其中上部120a與下部120b互相連接,且下部120b可轉動地接合於上部120a的底端。管狀電極120之下部120b可以管狀電極120之中心軸126為旋轉中心旋轉。進料治具150可固定於管狀電極120之上部120a,旋轉噴嘴130則可固定在管狀電極 120之下部120b的底部。在一些示範例子中,管狀電極120之下部120b與旋轉噴嘴130一起旋轉,而管狀電極120之上部120a則不轉動。 In some examples, the feed jig 150 does not rotate. The feeding jig 150 may be fixed on the tubular electrode 120, for example. In some exemplary examples, the tubular electrode 120 may include an upper portion 120a and a lower portion 120b, wherein the upper portion 120a and the lower portion 120b are interconnected, and the lower portion 120b is rotatably coupled to the bottom end of the upper portion 120a. The lower portion 120b of the tubular electrode 120 can be rotated around the central axis 126 of the tubular electrode 120 as a rotation center. The feeding jig 150 can be fixed to the upper part 120a of the tubular electrode 120, and the rotary nozzle 130 can be fixed to the tubular electrode 120a. 120 Lower part of the bottom 120b. In some exemplary examples, the lower portion 120b of the tubular electrode 120 rotates with the rotating nozzle 130, and the upper portion 120a of the tubular electrode 120 does not rotate.

旋轉噴嘴130以旋轉方式噴出電漿112,藉此所噴出的電漿112也會旋轉,因此可擴展電漿112進行鍍膜作業時的鍍膜面積,而可進行大面積的鍍膜,減少鍍膜時間,提升產能,並可降低被鍍膜之工件基材180在鍍膜時的溫度,而可使得工件基材180的材料選擇更為多元。此外,旋轉噴嘴130噴出高速流動的電漿112時,會在電漿噴口136附近形成低壓區。此低壓區可對鍍膜前驅物160產生吸引力。當進料治具150朝旋轉噴嘴130之外側面132的下部132b噴射鍍膜前驅物160時,利用電漿噴口136附近之低壓區對鍍膜前驅物160的吸引,並利用旋轉噴嘴130之外側面132的下部132b的外徑朝電漿噴口136漸縮的設計來導引鍍膜前驅物160。因此,鍍膜前驅物160可沿著旋轉噴嘴130之外側面132的下部132b流動至電漿噴口136前,而與電漿噴口136旋轉噴出之電漿112瞬間混合反應,進而可在工件基材180之表面182上順利形成鍍膜184。故,常壓電漿鍍膜裝置100的應用不僅可有效改善鍍膜前驅物160散逸於大氣中而造成浪費與汙染的問題,更可在極短時間內提高鍍膜前驅物160與電漿112混合的均勻度,而可避免鍍膜前驅物160與電漿112過度反應的問題,進而可提升鍍膜184的品質。 The rotary nozzle 130 sprays the plasma 112 in a rotating manner, so that the sprayed plasma 112 also rotates. Therefore, the coating area of the plasma 112 during the coating operation can be expanded, and a large area coating can be performed to reduce the coating time and improve Productivity, and can reduce the temperature of the coated substrate 180 of the workpiece during coating, so that the material selection of the workpiece substrate 180 can be more diversified. In addition, when the rotating nozzle 130 ejects the plasma 112 flowing at a high speed, a low-pressure region is formed near the plasma nozzle 136. This low-pressure region may be attractive to the coating precursor 160. When the feeding fixture 150 sprays the coating precursor 160 toward the lower portion 132b of the outer side 132 of the rotary nozzle 130, the low-pressure area near the plasma nozzle 136 is used to attract the coating precursor 160, and the outer side 132 of the rotary nozzle 130 is used The outer diameter of the lower portion 132b is gradually reduced toward the plasma nozzle 136 to guide the coating precursor 160. Therefore, the coating precursor 160 can flow along the lower portion 132b of the outer side 132 of the rotary nozzle 130 to the front of the plasma nozzle 136, and instantly mix and react with the plasma 112 that is rotated by the plasma nozzle 136, and thus can be applied to the workpiece substrate 180. A plating film 184 is smoothly formed on the surface 182. Therefore, the application of the ordinary piezoelectric coating device 100 can not only effectively improve the problem of waste and pollution caused by the coating precursor 160 being dissipated in the atmosphere, but also can improve the uniform mixing of the coating precursor 160 and the plasma 112 in a very short time. This can avoid the problem of excessive reaction between the coating precursor 160 and the plasma 112, and can further improve the quality of the coating 184.

在圖1所示之實施例中,此電漿鍍膜裝置100包含單一個進料治具150。此進料治具150係一環狀進料治具。在一些例子中,進料治具150包含環狀接合部154以及環狀延伸部156。常壓電漿產生器110穿設於環狀接合部154中,而環狀接合部154可環設於旋轉噴嘴130及/或管狀電極120外。舉例而言,環狀接合部154環設於管狀電極120與旋轉噴嘴130之外。環狀接合部154並沒有和旋轉噴嘴130接觸。環狀延伸部156自環狀接合部154之底部154b向下延伸。舉例而言,環狀延伸部156自環狀接合部154之底部154b的外周緣向下延伸。常壓電漿產生器110穿設於環狀延伸部156中,而環狀延伸部156可環設於旋轉噴嘴130及/或管狀電極120外。舉例而言,環狀延伸部156係環設於旋轉噴嘴130外。環狀延伸部156與旋轉噴嘴130之間相隔一段距離,而可在環狀延伸部156與旋轉噴嘴130之間形成一環狀通道158。 In the embodiment shown in FIG. 1, the plasma coating apparatus 100 includes a single feeding fixture 150. This feeding jig 150 is a ring-shaped feeding jig. In some examples, the feeding fixture 150 includes an annular joint 154 and an annular extension 156. The normal piezoelectric slurry generator 110 is disposed in the annular joint portion 154, and the annular joint portion 154 may be annularly disposed outside the rotary nozzle 130 and / or the tubular electrode 120. For example, the annular joint portion 154 is disposed outside the tubular electrode 120 and the rotating nozzle 130. The annular joint portion 154 is not in contact with the rotary nozzle 130. The annular extension portion 156 extends downward from the bottom portion 154 b of the annular joint portion 154. For example, the annular extension portion 156 extends downward from the outer peripheral edge of the bottom portion 154 b of the annular joint portion 154. The normal piezoelectric slurry generator 110 is disposed in the annular extension portion 156, and the annular extension portion 156 may be annularly disposed outside the rotary nozzle 130 and / or the tubular electrode 120. For example, the annular extension portion 156 is disposed outside the rotary nozzle 130. The annular extension 156 is separated from the rotary nozzle 130 by a distance, and an annular channel 158 can be formed between the annular extension 156 and the rotary nozzle 130.

前驅物噴口152設置在環狀延伸部156中。在一些實施例中,環狀延伸部156具有環狀流道156c,且進料治具150具有單一個前驅物噴口152,其中此前驅物噴口152為環狀並與環狀流道156c連通。在一些示範例子中,前驅物噴口152與旋轉噴嘴130相對,以利朝旋轉噴嘴130之外側面132噴射鍍膜前驅物160。鍍膜前驅物160自進料治具150之前驅物噴口152中噴向旋轉噴嘴130之外側面132後,可先被侷限在環狀延伸部156與旋轉噴嘴130之間的環狀通道158內,再順著旋轉噴嘴130之外側面132流動到電 漿噴口136前。在一些例子中,如圖1所示,環狀延伸部156之底面156b高於旋轉噴嘴130之電漿噴口136,且環狀延伸部156之底面156b與旋轉噴嘴130之電漿噴口136之間的高度差H可例如等於或小於約2公分。在另一些例子中,環狀延伸部156之底面156b低於旋轉噴嘴130之電漿噴口136,且環狀延伸部156之底面156b與旋轉噴嘴130之電漿噴口136之間的高度差H小於約1公分。 A precursor spout 152 is provided in the annular extension 156. In some embodiments, the annular extension 156 has an annular flow channel 156c, and the feeding fixture 150 has a single precursor ejection port 152, wherein the former ejection port 152 is annular and communicates with the annular flow channel 156c. In some exemplary examples, the precursor nozzle 152 is opposite to the rotary nozzle 130 so as to spray the coated precursor 160 toward the outer side 132 of the rotary nozzle 130. After the coating precursor 160 is sprayed from the precursor nozzle 152 of the feeding fixture 150 to the outer side 132 of the rotary nozzle 130, it can be confined in the annular channel 158 between the annular extension 156 and the rotary nozzle 130. And then flow along the outer side 132 of the rotating nozzle 130 to the electricity Front of the nozzle 136. In some examples, as shown in FIG. 1, the bottom surface 156 b of the annular extension 156 is higher than the plasma nozzle 136 of the rotary nozzle 130, and between the bottom surface 156 b of the annular extension 156 and the plasma nozzle 136 of the rotary nozzle 130 The height difference H may be equal to or less than about 2 cm, for example. In other examples, the bottom surface 156b of the annular extension 156 is lower than the plasma nozzle 136 of the rotary nozzle 130, and the height difference H between the bottom surface 156b of the annular extension 156 and the plasma nozzle 136 of the rotary nozzle 130 is less than About 1 cm.

在另一些實施例中,進料治具150之環狀延伸部156具有環狀流道156c,且進料治具150具有多個前驅物噴口152。這些前驅物噴口152與環狀流道156c連通,且這些前驅物噴口152與旋轉噴嘴130相對。這些前驅物噴口152環設於旋轉噴嘴130外,且這些前驅物噴口152之間可具有相同間距、或不同間距。在一些特定例子中,進料治具150之環狀延伸部156並未具有環狀流道,且前驅物噴口152彼此分隔而獨立地朝旋轉噴嘴130噴射鍍膜前驅物160。 In other embodiments, the annular extension 156 of the feeding jig 150 has an annular flow channel 156c, and the feeding jig 150 has a plurality of precursor nozzles 152. These precursor nozzles 152 communicate with the annular flow passage 156c, and these precursor nozzles 152 are opposed to the rotary nozzle 130. The precursor nozzles 152 are arranged around the rotating nozzle 130, and the precursor nozzles 152 may have the same pitch or different pitches. In some specific examples, the annular extension 156 of the feeding jig 150 does not have an annular flow channel, and the precursor nozzles 152 are spaced apart from each other to independently spray the coating precursor 160 toward the rotary nozzle 130.

請參照圖2,其係繪示依照本發明之一實施方式的一種電漿鍍膜裝置的示意圖。本實施方式之電漿鍍膜裝置100a之架構大致與上述實施方式之電漿鍍膜裝置100的架構相同,二者之間的差異在於,電漿鍍膜裝置100a之旋轉噴嘴130a與電漿鍍膜裝置100之旋轉噴嘴130的結構不同。 Please refer to FIG. 2, which is a schematic diagram of a plasma coating device according to an embodiment of the present invention. The structure of the plasma coating device 100a of this embodiment is substantially the same as the structure of the plasma coating device 100 of the above embodiment. The difference between the two is that the rotary nozzle 130a of the plasma coating device 100a and the plasma coating device 100 have the same structure. The structure of the rotary nozzle 130 is different.

在電漿鍍膜裝置100a中,旋轉噴嘴130a之外側面132a的下部132b’為斜面,即為斜平面,而非弧面。在一些示範例子中,旋轉噴嘴130a之外側面132a的下部132b’ 的一側邊138,也就是斜面的一側邊,為電漿噴口136的外緣。因此,旋轉噴嘴130a之外側面132a的下部132b’一直傾斜延伸至電漿噴口136。 In the plasma coating apparatus 100a, the lower portion 132b 'of the outer side surface 132a of the rotary nozzle 130a is an inclined surface, that is, an inclined plane, not an arc surface. In some exemplary examples, the lower portion 132b 'of the outer side 132a of the rotating nozzle 130a One side 138, that is, one side of the inclined plane, is the outer edge of the plasma nozzle 136. Therefore, the lower portion 132b 'of the outer side surface 132a of the rotary nozzle 130a extends obliquely to the plasma nozzle 136.

請參照圖3,其係繪示依照本發明之一實施方式的一種電漿鍍膜裝置的示意圖。本實施方式之電漿鍍膜裝置100b之架構大致與上述實施方式之電漿鍍膜裝置100的架構相同,二者之間的差異在於,電漿鍍膜裝置100b包含多個進料治具150a,且這些進料治具150a的結構與電漿鍍膜裝置100之進料治具150的結構不同。 Please refer to FIG. 3, which is a schematic diagram of a plasma coating device according to an embodiment of the present invention. The structure of the plasma coating device 100b of this embodiment is substantially the same as the structure of the plasma coating device 100 of the above embodiment. The difference between the two is that the plasma coating device 100b includes a plurality of feeding fixtures 150a, and these The structure of the feeding fixture 150 a is different from the structure of the feeding fixture 150 of the plasma coating apparatus 100.

在電漿鍍膜裝置100b中,這些進料治具150a圍設於管狀電極120及/或旋轉噴嘴130外。舉例而言,這些進料治具150a圍設於旋轉噴嘴130之外側面132外。這些進料治具150a並沒有與旋轉噴嘴130接觸,且這些進料治具150a可不轉動。每個進料治具150a均包含至少一前驅物噴口152a,前驅物噴口152位於進料治具150a的底面。在一些示範例子中,這些進料治具150a之前驅物噴口152a均可正對旋轉噴嘴130之外側面132的下部132b。 In the plasma coating device 100b, these feeding fixtures 150a are surrounded outside the tubular electrode 120 and / or the rotary nozzle 130. For example, the feeding jigs 150 a are enclosed outside the outer side surface 132 of the rotary nozzle 130. The feeding fixtures 150a are not in contact with the rotating nozzle 130, and the feeding fixtures 150a may not be rotated. Each of the feeding fixtures 150a includes at least one precursor spout 152a, and the precursor spouts 152 are located on the bottom surface of the feeding fixture 150a. In some exemplary examples, the feed nozzles 152 a of the feed fixtures 150 a may face the lower portion 132 b of the outer side 132 of the rotary nozzle 130.

在一些例子中,每個進料治具150a之前驅物噴口152a高於旋轉噴嘴130之電漿噴口136,且每個前驅物噴口152a與旋轉噴嘴130之電漿噴口136之間的高度差h可等於或小於約2公分。在一些特定例子中,每個進料治具150a之前驅物噴口152a低於旋轉噴嘴130之電漿噴口136,且每個前驅物噴口152a與旋轉噴嘴130之電漿噴口136之間的高度差h可小於約1公分。 In some examples, the precursor nozzle 152a of each feed fixture 150a is higher than the plasma nozzle 136 of the rotary nozzle 130, and the height difference h between each precursor nozzle 152a and the plasma nozzle 136 of the rotary nozzle 130 is h Can be equal to or less than about 2 cm. In some specific examples, the precursor nozzle 152a of each feed fixture 150a is lower than the plasma nozzle 136 of the rotary nozzle 130, and the height difference between each precursor nozzle 152a and the plasma nozzle 136 of the rotary nozzle 130 h may be less than about 1 cm.

由上述之實施方式可知,本發明之一優點就是因為本發明之電漿鍍膜裝置的進料治具設於鄰設於旋轉噴嘴的外圍,藉此不僅可提供旋轉電漿來進行大面積鍍膜,並可降低被處理工件在鍍膜時之溫度,更可解決旋轉噴嘴及其上之管狀電極內部的鍍膜原料汙染問題,而可提升電漿的穩定度,進而可有效率地進行鍍膜作業,提高鍍膜品質。 It can be known from the above embodiments that one advantage of the present invention is that the feeding fixture of the plasma coating device of the present invention is located adjacent to the periphery of the rotary nozzle, thereby not only providing a rotary plasma for large-area coating, It can reduce the temperature of the workpiece to be coated during coating, and it can also solve the problem of contamination of the coating materials inside the rotating nozzle and the tubular electrode on it, which can improve the stability of the plasma, and can efficiently perform the coating operation and improve the coating. quality.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何在此技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed as above by way of example, it is not intended to limit the present invention. Any person with ordinary knowledge in this technical field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the appended patent application.

Claims (16)

一種電漿鍍膜裝置,包含:一常壓電漿產生器,配置以產生一電漿,其中該常壓電漿產生器包含:一管狀電極;以及一旋轉噴嘴,設於該管狀電極之一底部,其中該旋轉噴嘴配置以在一旋轉狀態下噴射該電漿,該旋轉噴嘴具有一電漿噴口以及一外側面,且該外側面之一下部之一外徑由該管狀電極之該底部往該電漿噴口的方向漸縮;以及至少一進料治具,設於該旋轉噴嘴之該外側面之外圍,其中該至少一進料治具包含至少一前驅物噴口,該至少一進料治具配置以經由該至少一前驅物噴口朝該旋轉噴嘴之該外側面之該下部噴射一鍍膜前驅物,其中該電漿噴口噴出該電漿時會在該電漿噴口附近形成一低壓區,該鍍膜前驅物被該低壓區吸引而順著該旋轉噴嘴之該外側面之該下部流至該電漿噴口前來與該電漿反應。A plasma coating device includes: an ordinary piezoelectric plasma generator configured to generate a plasma, wherein the ordinary piezoelectric plasma generator includes: a tubular electrode; and a rotary nozzle provided at a bottom of one of the tubular electrodes Wherein the rotary nozzle is configured to spray the plasma in a rotating state, the rotary nozzle has a plasma nozzle and an outer side, and an outer diameter of a lower part of the outer side is from the bottom of the tubular electrode to the The direction of the plasma nozzle is tapered; and at least one feeding fixture is provided on the periphery of the outer side of the rotary nozzle, wherein the at least one feeding fixture includes at least one precursor nozzle and the at least one feeding fixture Configured to spray a coating precursor toward the lower portion of the outer side of the rotary nozzle through the at least one precursor spray port, wherein when the plasma spray port sprays the plasma, a low-pressure region is formed near the plasma spray port, the coating film The precursor is attracted by the low-pressure region and flows along the lower portion of the outer side of the rotary nozzle to the plasma nozzle to react with the plasma. 如申請專利範圍第1項之電漿鍍膜裝置,其中該至少一進料治具之該至少一前驅物噴口正對該旋轉噴嘴之該外側面之該下部。For example, the plasma coating device of the scope of patent application, wherein the at least one precursor nozzle of the at least one feeding jig is facing the lower part of the outer side of the rotary nozzle. 如申請專利範圍第1項之電漿鍍膜裝置,其中該至少一進料治具包含:一環狀接合部,圍設於該管狀電極及/或該旋轉噴嘴外,其中該環狀接合部並未與該旋轉噴嘴接觸;以及一環狀延伸部,自該環狀接合部之一底部向下延伸,其中該至少一前驅物噴口設於該環狀延伸部中。For example, the plasma coating device of item 1 of the patent application scope, wherein the at least one feeding jig includes: a ring-shaped joint portion surrounding the tubular electrode and / or the rotary nozzle, wherein the ring-shaped joint portion is Not in contact with the rotary nozzle; and an annular extension portion extending downward from a bottom of the annular joint portion, wherein the at least one precursor nozzle is provided in the annular extension portion. 如申請專利範圍第3項之電漿鍍膜裝置,其中該環狀延伸部具有一環狀流道,該環狀流道與該至少一前驅物噴口連通。For example, the plasma coating device according to item 3 of the patent application, wherein the annular extension portion has an annular flow channel, and the annular flow channel is in communication with the at least one precursor ejection port. 如申請專利範圍第4項之電漿鍍膜裝置,其中該至少一前驅物噴口包含複數個前驅物噴口,且該些前驅物噴口之間具有相同之間距。For example, the plasma coating device for item 4 of the patent application scope, wherein the at least one precursor nozzle includes a plurality of precursor nozzles, and the precursor nozzles have the same distance therebetween. 如申請專利範圍第3項之電漿鍍膜裝置,其中該環狀延伸部之一底面高於該旋轉噴嘴之該電漿噴口,且該環狀延伸部之該底面與該旋轉噴嘴之該電漿噴口之一高度差等於或小於2公分。For example, the plasma coating device of the third item of the patent application, wherein a bottom surface of one of the annular extensions is higher than the plasma nozzle of the rotary nozzle, and the bottom surface of the annular extension and the plasma of the rotary nozzle One of the nozzles has a height difference of 2 cm or less. 如申請專利範圍第3項之電漿鍍膜裝置,其中該環狀延伸部之一底面低於該旋轉噴嘴之該電漿噴口,且該環狀延伸部之該底面與該旋轉噴嘴之該電漿噴口之一高度差小於1公分。For example, the plasma coating device for item 3 of the patent application scope, wherein a bottom surface of one of the annular extensions is lower than the plasma nozzle of the rotary nozzle, and the bottom surface of the annular extension and the plasma of the rotary nozzle The height difference of one of the spouts is less than 1 cm. 如申請專利範圍第1項之電漿鍍膜裝置,其中該旋轉噴嘴之該外側面之該下部為一斜面。For example, the plasma coating device of the first patent application range, wherein the lower part of the outer side of the rotary nozzle is an inclined surface. 如申請專利範圍第8項之電漿鍍膜裝置,其中該斜面之一側邊為該電漿噴口之一外緣。For example, the plasma coating device for item 8 of the patent scope, wherein one side of the inclined surface is an outer edge of the plasma nozzle. 如申請專利範圍第1項之電漿鍍膜裝置,其中該旋轉噴嘴之該外側面之該下部為一弧面。For example, the plasma coating device of the first patent application range, wherein the lower part of the outer surface of the rotary nozzle is an arc surface. 如申請專利範圍第1項之電漿鍍膜裝置,其中該至少一進料治具固定於該管狀電極上,且該至少一進料治具不轉動。For example, the plasma coating device according to item 1 of the application, wherein the at least one feeding fixture is fixed on the tubular electrode, and the at least one feeding fixture does not rotate. 如申請專利範圍第1項之電漿鍍膜裝置,其中該管狀電極包含互相連接之一上部與一下部,該旋轉噴嘴固定於該管狀電極之該下部,且該管狀電極之該下部與該旋轉噴嘴一起旋轉。For example, the plasma coating device of the first patent application range, wherein the tubular electrode includes an upper portion and a lower portion connected to each other, the rotary nozzle is fixed to the lower portion of the tubular electrode, and the lower portion of the tubular electrode and the rotary nozzle Rotate together. 如申請專利範圍第1項之電漿鍍膜裝置,其中該至少一進料治具包含複數個進料治具,該些進料治具圍設於該管狀電極及/或該旋轉噴嘴外,且該些進料治具並未與該旋轉噴嘴接觸。For example, the plasma coating device of the scope of patent application, wherein the at least one feeding jig includes a plurality of feeding jigs, the feeding jigs are enclosed outside the tubular electrode and / or the rotating nozzle, and The feeding jigs are not in contact with the rotating nozzle. 如申請專利範圍第13項之電漿鍍膜裝置,其中該至少一前驅物噴口包含複數個前驅物噴口分別位於該些進料治具之底面,且每一該些前驅物噴口高於該旋轉噴嘴之該電漿噴口,每一該些前驅物噴口與該旋轉噴嘴之該電漿噴口之一高度差等於或小於2公分。For example, the plasma coating device according to item 13 of the patent application, wherein the at least one precursor nozzle includes a plurality of precursor nozzles respectively located on the bottom surface of the feeding fixtures, and each of the precursor nozzles is higher than the rotary nozzle. For the plasma nozzle, a height difference between each of the precursor nozzles and the plasma nozzle of the rotary nozzle is equal to or less than 2 cm. 如申請專利範圍第13項之電漿鍍膜裝置,其中該至少一前驅物噴口包含複數個前驅物噴口分別位於該些進料治具之底面,且每一該些前驅物噴口低於該旋轉噴嘴之該電漿噴口,每一該些前驅物噴口與該旋轉噴嘴之該電漿噴口之一高度差小於1公分。For example, the plasma coating device according to item 13 of the patent application, wherein the at least one precursor spray nozzle includes a plurality of precursor spray nozzles respectively located on the bottom surface of the feeding fixtures, and each of the precursor spray nozzles is lower than the rotary nozzle For the plasma nozzle, the height difference between each of the precursor nozzles and the plasma nozzle of the rotary nozzle is less than 1 cm. 如申請專利範圍第1項之電漿鍍膜裝置,其中該鍍膜前驅物為氣體、霧氣滴、液體或粉末。For example, the plasma coating device according to item 1 of the application, wherein the coating precursor is a gas, a mist droplet, a liquid, or a powder.
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