TWI665751B - Continuous coating system with reactive ion etching function - Google Patents
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Abstract
具有反應式離子蝕刻功能的連續式鍍膜系統是電連接於電源供應器且包含載盤並沿生產方向包含一包括載入腔體的載入裝置、反應式離子蝕刻(以下稱RIE)裝置、濺鍍裝置及載出裝置。RIE裝置包括電連接電源供應器以於執行RIE製程時做為第一極板用的蝕刻腔體,及電漿侷限單元。電漿侷限單元具圍繞且連接於蝕刻腔體內周緣以與蝕刻腔體共同定義出接地路徑的金屬遮罩。載入腔體、蝕刻腔體、濺鍍裝置的濺鍍腔體與載出裝置的載出腔體彼此相通,且該等腔體共同定義出輸送通道。載盤電連接於電源供應器並於輸送通道中沿生產方向移動,當載盤於執行RIE製程時能做為第二極板用。The continuous coating system with a reactive ion etching function is electrically connected to a power supply and includes a carrier plate and includes a loading device including a loading cavity along a production direction, a reactive ion etching (hereinafter referred to as RIE) device, sputtering Plating device and loading device. The RIE device includes an etching cavity electrically connected to a power supply for performing the RIE process as a first electrode plate, and a plasma confinement unit. The plasma confinement unit has a metal shield surrounding and connected to the inner periphery of the etching cavity to define a ground path together with the etching cavity. The loading chamber, the etching chamber, the sputtering chamber of the sputtering device and the loading chamber of the loading device are in communication with each other, and these chambers collectively define a conveying channel. The carrier is electrically connected to the power supply and moves in the production channel in the production direction. The carrier can be used as a second electrode plate when performing the RIE process.
Description
本發明是有關於一種連續式(in-line)鍍膜系統,特別是指一種具有反應式離子蝕刻(reactive ion etching;簡稱RIE)功能的連續式鍍膜系統。The invention relates to an in-line coating system, in particular to a continuous coating system with a reactive ion etching (reactive ion etching) function.
乾式蝕刻法(dry etching)依其電漿(plasma)模式一般是可被區分為電漿蝕刻模式(plasma etching mode;簡稱PE mode)、反應式離子蝕刻模式(RIE mode),與感應式耦合電漿(inductively coupled plasma;簡稱ICP)反應式離子蝕刻模式(ICP-RIE mode),…等多種。目前業界於in-line鍍膜系統中常結合PE模式,但礙於PE模式所構成的電漿密度較低,其對於一待處理工件的離子轟擊(ion bombardment)程度不足;因此,目前僅在批次爐(batch type)相關業界(即,單腔式)偏向使用RIE模式。Dry etching is generally divided into plasma etching mode (PE mode) and reactive ion etching mode (RIE mode) according to its plasma mode. Inductively coupled plasma (ICP for short), reactive ion etching mode (ICP-RIE mode), and so on. At present, the industry often combines the PE mode in the in-line coating system. However, due to the low plasma density formed by the PE mode, the ion bombardment of a workpiece to be processed is insufficient; therefore, it is currently only used in batches. Industry related to the batch type (ie, single cavity type) prefers to use the RIE mode.
基於封裝相關技術領域在實施其封裝製程時,須考量到脫膜的問題;因此,就現有的RIE模式之乾式蝕刻法的相關應用來說,其目的是在於移除掉封裝材料表面所殘留之不易附著的成分(如,氟化物),以藉此避免此等不易附著的成分影響到後端之鍍膜製程時的附著性。此外,就大面積的RIE須考量到的問題,不外乎是電場(electric fiel)的均勻性;因此,在單腔式的RIE設備的相關技術文件中,則可見有美國第6,506,685 B2公告號、第8,360,003 B2公告號及第8,465,620 B2公告號等專利文件,其多半是在說明利用金屬材質的遮蔽物來提升電場的均勻性以令電漿可被侷限在待處理工件的表面。Based on the technical field of packaging, when implementing its packaging process, it is necessary to consider the problem of delamination; therefore, for the related application of the existing dry etching method of RIE mode, the purpose is to remove the remaining material on the surface of the packaging material. Non-adhesive components (such as fluoride) to prevent these non-adhesive components from affecting the adhesion during the back-end plating process. In addition, the problem that must be considered in large-area RIE is nothing more than the uniformity of the electric field (electric fiel); therefore, in the relevant technical documents of the single-chamber RIE device, you can see the US Publication No. 6,506,685 B2 Patent documents No. 8,360,003 B2 and No. 8,465,620 B2, most of them are explaining the use of metal shields to improve the uniformity of the electric field so that the plasma can be confined to the surface of the workpiece to be processed.
雖然該等美國公告號的專利文件提供了增加電場均勻性的相關技術手段;然而,在講求生產效率的現階段來說,單腔式的RIE設備始終無法為生產效率帶來大幅度的貢獻。Although these U.S. published patent documents provide related technical means to increase the uniformity of the electric field; at the current stage of stressing production efficiency, single-chamber RIE equipment has not been able to make a significant contribution to production efficiency.
因此,根據上述說明可知,在提升生產效率的前提下,解決RIE之電場均勻性的問題,是所屬技術領域的相關技術人員有待解決的課題。Therefore, according to the above description, it is known that solving the problem of the uniformity of the electric field of the RIE under the premise of improving the production efficiency is a problem to be solved by those skilled in the relevant technical field.
因此,本發明的目的,即在提供一種能提升生產效率亦改善RIE之電場均勻性之具有反應式離子蝕刻功能的連續式鍍膜系統。Therefore, an object of the present invention is to provide a continuous coating system with a reactive ion etching function that can improve production efficiency and improve the uniformity of the electric field of RIE.
於是,本發明具有反應式離子蝕刻功能的連續式鍍膜系統,是電連接於一電源供應器並包括一載盤及一輸送機構,且沿一生產方向還包括一載入裝置、一反應式離子蝕刻裝置、一濺鍍裝置,及一載出裝置。該載入裝置包括一載入腔體。該反應式離子蝕刻裝置臨接於該載入裝置,並包括一與該載入腔體相通且電連接至該電源供應器的蝕刻腔體,及一位在該蝕刻腔體內的電漿侷限單元。該蝕刻腔體於執行一反應式離子蝕刻製程時,是做為該反應式離子蝕刻裝置的一第一極板用。該電漿侷限單元具有一圍繞該蝕刻腔體之一內周緣的金屬遮罩,且該金屬遮罩連接於該蝕刻腔體以與該蝕刻腔體共同定義出一接地路徑。該濺鍍裝置臨接於該反應式離子蝕刻裝置,並包括一與該蝕刻腔體相通的濺鍍腔體。該載出裝置臨接於該濺鍍裝置,並包括一與該濺鍍腔體相通的載出腔體,且該載入腔體、該蝕刻腔體、該濺鍍腔體,及該載出腔體共同定義出一輸送通道。該載盤能與該電源供應器電連接並能於該輸送通道中沿該生產方向移動,當該載盤位於該蝕刻腔體內以執行該反應式離子蝕刻製程時,能做為該反應式離子蝕刻裝置的一第二極板用。該輸送機構包括一驅動單元,及一設置於該輸送通道中並與該驅動單元連接的掣動單元。該掣動單元受該驅動單元所驅動,以帶動位在該掣動單元上的該載盤能沿該生產方向移動。Therefore, the continuous coating system with a reactive ion etching function of the present invention is electrically connected to a power supply and includes a carrier plate and a transport mechanism, and further includes a loading device and a reactive ion along a production direction. Etching device, a sputtering device, and a carrying device. The loading device includes a loading cavity. The reactive ion etching device is adjacent to the loading device, and includes an etching cavity communicating with the loading cavity and electrically connected to the power supply, and a plasma confinement unit in the etching cavity. . The etching cavity is used as a first electrode plate of the reactive ion etching device when performing a reactive ion etching process. The plasma confinement unit has a metal mask surrounding an inner periphery of the etching cavity, and the metal mask is connected to the etching cavity to define a ground path together with the etching cavity. The sputtering device is adjacent to the reactive ion etching device and includes a sputtering cavity communicating with the etching cavity. The loading device is adjacent to the sputtering device, and includes a loading cavity communicating with the sputtering cavity, and the loading cavity, the etching cavity, the sputtering cavity, and the loading The cavities together define a delivery channel. The carrier can be electrically connected to the power supply and can move in the production channel in the production direction. When the carrier is located in the etching chamber to perform the reactive ion etching process, it can be used as the reactive ion. For a second electrode plate of an etching device. The conveying mechanism includes a driving unit and a actuating unit disposed in the conveying channel and connected to the driving unit. The actuating unit is driven by the driving unit to drive the carrier plate located on the actuating unit to move in the production direction.
本發明的功效在於:藉由該電源供應器以提供一接地電位給做為該第一電極板用之彼此連接的該金屬遮罩與該蝕刻腔體,並提供一射頻(r.f.)電位給做為該第二電極板用該載盤,可令該載盤於該反應式離子蝕刻裝置之蝕刻腔體的空間中執行該該反應式離子蝕刻製程時,經電場裂解一反應式氣體所構成的一電漿被侷限在該載盤的上方,從而在提升生產效率的前提下,解決RIE之電場均勻性的問題。The effect of the present invention is that: the power supply is used to provide a ground potential to the metal mask and the etching cavity connected to each other as the first electrode plate, and to provide a radio frequency (rf) potential to the The carrier plate is used for the second electrode plate, and the carrier plate can be made by a reactive gas to be cracked by an electric field during the reactive ion etching process in the space of an etching cavity of the reactive ion etching device. A plasma is confined above the carrier plate, thereby solving the problem of uniformity of the electric field of the RIE under the premise of improving production efficiency.
參閱圖1、圖2與圖3,本發明具有反應式離子蝕刻功能的連續式鍍膜系統的一實施例,是電連接於一電源供應器(圖未示)並包括一載盤6,及一輸送機構7,且沿一生產方向X還依序包括一載入裝置2、一反應式離子蝕刻裝置3、一濺鍍裝置4,及一載出裝置5。該載入裝置2包括一載入腔體21。Referring to FIG. 1, FIG. 2, and FIG. 3, an embodiment of a continuous coating system with a reactive ion etching function according to the present invention is electrically connected to a power supply (not shown) and includes a carrier plate 6, and a The conveying mechanism 7 further includes a loading device 2, a reactive ion etching device 3, a sputtering device 4, and a carrying device 5 in order along a production direction X. The loading device 2 includes a loading cavity 21.
該反應式離子蝕刻裝置3臨接於該載入裝置2,並包括一與該載入腔體21相通且電連接至該電源供應器的蝕刻腔體31,及一位在該蝕刻腔體31內的電漿侷限單元32。該蝕刻腔體31具有一定義出一空間310的金屬圍壁311,及一連接該金屬圍壁311以封閉該空間310的金屬蓋板312。該蝕刻腔體31於執行一反應式離子蝕刻製程時,是做為該反應式離子蝕刻裝置3的一第一極板用。該電漿侷限單元32具有一圍繞該蝕刻腔體31之一內周緣的金屬遮罩321,且該金屬遮罩321連接於該蝕刻腔體31的金屬圍壁311。詳細地來說,該蝕刻腔體31是電連接於該電源供應器的一匹配器(matching box;圖未示),以透過該匹配器對該蝕刻腔體31提供一接地(grounding)電位;因此,彼此連接的該電漿侷限單元32的該金屬遮罩321與該蝕刻腔體31共同定義出一接地路徑G(見圖5)。The reactive ion etching device 3 is adjacent to the loading device 2 and includes an etching cavity 31 that communicates with the loading cavity 21 and is electrically connected to the power supply, and a bit in the etching cavity 31.内 plasmon confinement unit 32. The etching cavity 31 has a metal enclosure wall 311 defining a space 310 and a metal cover plate 312 connected to the metal enclosure wall 311 to close the space 310. The etching cavity 31 is used as a first electrode plate of the reactive ion etching device 3 when performing a reactive ion etching process. The plasma confinement unit 32 has a metal shield 321 surrounding an inner periphery of one of the etching cavities 31, and the metal shield 321 is connected to a metal surrounding wall 311 of the etching cavity 31. In detail, the etching cavity 31 is a matching box (not shown) electrically connected to the power supply, so as to provide a grounding potential to the etching cavity 31 through the matching device; Therefore, the metal mask 321 of the plasma confinement unit 32 and the etching cavity 31 connected to each other define a ground path G (see FIG. 5).
該濺鍍裝置4臨接於該反應式離子蝕刻裝置3,並包括一與該蝕刻腔體31相通的濺鍍腔體41。The sputtering apparatus 4 is adjacent to the reactive ion etching apparatus 3 and includes a sputtering chamber 41 communicating with the etching chamber 31.
該載出裝置5臨接於該濺鍍裝置4,並包括一與該濺鍍腔體41相通的載出腔體51,且該載入腔體21、該蝕刻腔體31、該濺鍍腔體41,及該載出腔體51共同定義出一輸送通道70。此要補充說明的是,本發明該實施例之連續式鍍膜系統實際上還包括複數緩衝裝置(圖未示),各緩衝裝置包括一緩衝腔體,且各緩衝腔體連接且相通於每兩相鄰之腔體21、31、41、51間,並共同定義出該輸送通道70。進一步地來說,該載入腔體21、該蝕刻腔體31、該濺鍍腔體41及該載出腔體51是分別透過各裝置2、3、4、5的一抽氣幫浦(圖未示)自其所對應之腔體21、31、41、51的一抽氣管路(圖未示)抽除各腔體21、31、41、51內的氣體,以令各腔體21、31、41、51維持一真空態。本發明之主要技術重點在於該反應式離子蝕刻裝置3,前述緩衝腔體甚或是抽氣幫浦並非本發明之技術重點,為縮減本案說明書的篇幅並簡化圖式內容以令本案所屬技術領域之技術人員可以將重點放在該反應式離子蝕刻裝置3,本發明之圖1是省略該等緩衝裝置與抽氣幫浦,且關於緩衝腔體與抽氣幫浦等細部結構與運作,於此不再多加贅述。The loading device 5 is adjacent to the sputtering device 4 and includes a loading cavity 51 communicating with the sputtering cavity 41, and the loading cavity 21, the etching cavity 31, and the sputtering cavity The body 41 and the loading cavity 51 together define a conveying channel 70. It should be added that the continuous coating system of this embodiment of the present invention actually includes a plurality of buffer devices (not shown), each buffer device includes a buffer cavity, and each buffer cavity is connected and communicated with each other. Adjacent cavities 21, 31, 41, 51 define the conveying channel 70 together. Further, the loading cavity 21, the etching cavity 31, the sputtering cavity 41, and the taking out cavity 51 are pumping pumps through respective devices 2, 3, 4, and 5 ( (Not shown) extracts the gas in each cavity 21, 31, 41, 51 from a suction line (not shown) of its corresponding cavity 21, 31, 41, 51, so that each cavity 21 , 31, 41, 51 maintain a vacuum state. The main technical focus of the present invention is the reactive ion etching device 3, and the aforementioned buffer cavity or even the pumping pump is not the technical focus of the present invention. In order to reduce the length of the description of this case and simplify the contents of the drawings, The skilled person can focus on the reactive ion etching device 3, FIG. 1 of the present invention omits the buffer devices and pumps, and details the structure and operation of the buffer cavity and pumps, etc. No more details.
該載盤6能與該電源供應器電連接並能於該輸送通道70中沿該生產方向X移動,且當該載盤6位於該蝕刻腔體31內以執行該反應式離子蝕刻製程時,能做為該反應式離子蝕刻裝置3的一第二極板用。簡單地說,本發明是藉由該匹配器以提供該接地電位給做為該第一電極板用之彼此連接的該金屬遮罩321與該蝕刻腔體31,並提供一射頻(r.f.)電位給做為該第二電極板用該載盤6,可令該載盤6於該反應式離子蝕刻裝置3之蝕刻腔體31空間310中執行該反應式離子蝕刻製程時,經電場裂解一反應式氣體所構成的一電漿是被侷限在該載盤6的上方,並藉此增加離子轟擊的程度。The carrier 6 can be electrically connected to the power supply and can move along the production direction X in the conveying channel 70, and when the carrier 6 is located in the etching cavity 31 to perform the reactive ion etching process, It can be used as a second electrode plate of the reactive ion etching device 3. Briefly, the present invention provides the ground potential to the metal mask 321 and the etching cavity 31 connected to each other as the first electrode plate by the matcher, and provides a radio frequency (rf) potential By using the carrier plate 6 as the second electrode plate, the carrier plate 6 can be caused to undergo a reaction through an electric field during the reactive ion etching process in the etching chamber 31 space 310 of the reactive ion etching device 3. A plasma composed of the type gas is confined above the carrier plate 6 and thereby increases the degree of ion bombardment.
該輸送機構7包括一驅動單元(圖未示),及一設置於該輸送通道70中並與該驅動單元連接的掣動單元71。該掣動單元71受該驅動單元所驅動,以帶動位在該掣動單元71上的該載盤6能沿該生產方向X移動。該掣動單元71可以是一皮帶滾輪組件,也可以是一齒輪組件,該輸送機構7同樣屬於現有技術,並非本發明之技術重點,於此不再多加贅述。The conveying mechanism 7 includes a driving unit (not shown) and a detent unit 71 disposed in the conveying passage 70 and connected to the driving unit. The actuating unit 71 is driven by the driving unit to drive the carrier 6 located on the actuating unit 71 to move along the production direction X. The actuating unit 71 may be a belt roller assembly or a gear assembly. The conveying mechanism 7 also belongs to the prior art and is not the technical focus of the present invention, and will not be described in detail here.
在本發明該實施例中,該反應式離子蝕刻裝置3還包括一升降單元33,且該電漿侷限單元32還具有兩金屬圍框322、一定義出複數網孔的金屬紗網324,及複數彼此間隔設置的金屬彈片323。該等金屬圍框322是彼此間隔設置並圍繞該蝕刻腔體31的內周緣,且連接於該金屬遮罩321並背向該金屬遮罩321延伸。該金屬紗網324是固定且夾置於該等金屬圍框322間以圍繞該蝕刻腔體31的內周緣。該等金屬彈片323連接於該等金屬圍框322中之位處於下方處的該金屬圍框322。該升降單元33具有一穿設於該蝕刻腔體31的軸桿331、一平台322,及一連接該軸桿331的驅動件(圖未示)。該升降單元33之平台332是固定在該軸桿331之一端緣(即,頂緣)以令該等金屬彈片323面向該升降單元33之平台332,且承載該載盤6並與該載盤6電性隔絕。該驅動件能驅動該軸桿331帶動該平台332於一載送位置(loading position)及一夾持位置(clamping position)間移動。In this embodiment of the present invention, the reactive ion etching device 3 further includes a lifting unit 33, and the plasma confinement unit 32 further has two metal enclosures 322, a metal gauze 324 defining a plurality of meshes, and A plurality of metal domes 323 are spaced from each other. The metal enclosure frames 322 are spaced apart from each other and surround the inner periphery of the etching cavity 31. The metal enclosure frames 322 are connected to the metal mask 321 and extend away from the metal mask 321. The metal gauze 324 is fixed and sandwiched between the metal enclosure frames 322 to surround the inner periphery of the etching cavity 31. The metal domes 323 are connected to the metal enclosure 322 in the metal enclosure 322 at a lower position. The lifting unit 33 includes a shaft 331 passing through the etching cavity 31, a platform 322, and a driving member (not shown) connected to the shaft 331. The platform 332 of the lifting unit 33 is fixed to one end edge (ie, the top edge) of the shaft 331 so that the metal springs 323 face the platform 332 of the lifting unit 33, and carries the carrier plate 6 and the carrier plate 6 Electrical isolation. The driving member can drive the shaft 331 to drive the platform 332 to move between a loading position and a clamping position.
如圖2與圖3所示,當該平台332位於該載送位置時,承載有該載盤6的該平台332令該載盤6位在該輸送機構7之掣動單元71上;換句話說,當該平台332位於該載送位置時,該升降單元33的驅動件驅動該軸桿331朝下移動以帶動該平台332朝下移動,令位在該平台332之上的該載盤6位在該輸送機構7之掣動單元71上。As shown in FIG. 2 and FIG. 3, when the platform 332 is in the carrying position, the platform 332 carrying the carrier 6 places the carrier 6 on the detent unit 71 of the conveying mechanism 7; In other words, when the platform 332 is located in the carrying position, the driving member of the lifting unit 33 drives the shaft 331 to move downward to drive the platform 332 to move downward, so that the carrier 6 located above the platform 332 It is located on the detent unit 71 of the conveying mechanism 7.
參閱圖4、圖5與圖6,當該平台332位於該夾制位置時,位在該平台332之上的該載盤6是相對該平台332位在該載送位置時靠近該等金屬圍框322,且該等金屬彈片323是被夾持於位於下方處的該金屬圍框322及該平台332間,以令該平台332接觸該等金屬彈片323並偕同該等金屬彈片323、該等金屬圍框322、該金屬紗網324、該金屬遮罩321及該蝕刻腔體31共同定義出該接地路徑G。換句話說,當該平台332位於該夾持位置時,該升降單元33的驅動件驅動該軸桿331朝上移動以帶動該平台332朝上移動,令被該平台332所承載的該載盤6靠近該等金屬圍框322,同時經上升位移後的該平台332接觸該等金屬彈片323以令該等金屬彈片323被夾持在位於下方處的該金屬圍框322與該平台332間,並偕同該等金屬彈片323、該等金屬圍框322、該金屬紗網324、該金屬遮罩321及該蝕刻腔體31定義出該接地路徑G。同樣地,該升降單元33之驅動件屬於已知的構件,其並非本發明之技術重點,為簡化本案圖式內容並縮減說明書篇幅,本案圖2~3與圖4~5是省略該升降單元33之驅動件,且說明書亦不對該驅動件的連接關係與運作多加贅述。Referring to FIG. 4, FIG. 5, and FIG. 6, when the platform 332 is in the clamped position, the carrier disk 6 located above the platform 332 is close to the metal enclosures when the platform 332 is located at the carrying position relative to the platform 332. Frame 322, and the metal domes 323 are clamped between the metal enclosure 322 and the platform 332 located below, so that the platform 332 contacts the metal domes 323 and is different from the metal domes 323, The metal enclosure 322, the metal gauze 324, the metal mask 321, and the etching cavity 31 collectively define the ground path G. In other words, when the platform 332 is in the clamping position, the driving member of the lifting unit 33 drives the shaft 331 to move upward to drive the platform 332 to move upward, so that the carrier disc carried by the platform 332 6 Close to the metal enclosures 322, and at the same time, the platform 332 after the upward displacement contacts the metal springs 323 so that the metal springs 323 are clamped between the metal enclosure 322 and the platform 332, The metal elastic sheet 323, the metal enclosure 322, the metal gauze 324, the metal mask 321, and the etching cavity 31 define the ground path G. Similarly, the driving part of the lifting unit 33 is a known component, which is not the technical focus of the present invention. In order to simplify the content of the drawings in this case and reduce the length of the description, FIGS. 2 to 3 and 4 to 5 in this case are omitted. 33 drive parts, and the manual does not go into details about the connection relationship and operation of the drive parts.
此外,該蝕刻腔體31之金屬圍壁311還具有複數貫穿該金屬圍壁311的進氣口3111,及複數貫穿該金屬圍壁311的抽氣口3112(圖2與圖4僅分別顯示出一個進氣口3111與一個抽氣口3112)。此處需進一步補充說明的是,為令經裂解該反應式氣體後所構成的該電漿是有效地被侷限在該蝕刻腔體31之空間310的上半部,較佳地,該蝕刻腔體31之進氣口3111是相對其抽氣口3112靠近該金屬紗網324,且該等進氣口3111是位在該金屬紗網324之相反兩側的其中一側(即,上側),該等抽氣口3112是位在該金屬紗網324之該相反兩側的其中另一側(即,下側),該金屬紗網324之網孔的孔徑是小於該反應式氣體的平均自由路徑(mean free path)。In addition, the metal enclosure wall 311 of the etching cavity 31 also has a plurality of air inlets 3111 penetrating through the metal enclosure wall 311 and a plurality of air exhaust ports 3112 penetrating through the metal enclosure wall 311 (Figures 2 and 4 only show one Air inlet 3111 and an air inlet 3112). What needs to be further explained here is that in order to make the plasma formed by cracking the reactive gas effectively confined to the upper half of the space 310 of the etching cavity 31, preferably, the etching cavity The air inlet 3111 of the body 31 is close to the metal gauze 324 relative to the air inlet 3112 thereof, and the air inlets 3111 are located on one side (ie, the upper side) of the opposite sides of the metal gauze 324, the The iso-exhaust port 3112 is located on the other side (ie, the lower side) of the opposite sides of the metal gauze 324. The aperture of the mesh of the metal gauze 324 is smaller than the average free path of the reactive gas ( mean free path).
詳細地來說,當一位在該載盤6上的待處理工件(圖未示)需進行該反應式離子蝕刻製程與一濺鍍製程時,該載盤6是位在如圖1所示之該輸送通道70中之該輸送機構7的掣動單元71上(為節省本案說明書的篇幅,以下是省略各緩衝腔體的相關說明),以透過該掣動單元71自該載入裝置2之載入腔體21的一入口端210沿該生產方向X依序被送至該載入腔體21、該反應式離子蝕刻裝置3的該蝕刻腔體31中執行該反應式離子蝕刻製程、該濺鍍裝置4的濺鍍腔體41中執行該濺鍍製程,及該載出裝置5的該載出腔體51中,並於執行完該反應式離子蝕刻製程與該濺鍍製程後經該載出腔體51的一出口端510送出本發明該實施例之連續式鍍膜系統。In detail, when a workpiece (not shown) on the carrier plate 6 needs to be subjected to the reactive ion etching process and a sputtering process, the carrier plate 6 is located as shown in FIG. 1. The stopper unit 71 of the delivery mechanism 7 in the delivery channel 70 (to save the length of the description of this case, the following description is omitted for each buffer cavity), so as to pass the stopper unit 71 from the loading device 2 An inlet end 210 of the loading chamber 21 is sequentially sent to the loading chamber 21 and the etching chamber 31 of the reactive ion etching apparatus 3 along the production direction X to perform the reactive ion etching process, The sputtering process is performed in the sputtering chamber 41 of the sputtering apparatus 4 and in the loading chamber 51 of the loading apparatus 5, and after the reactive ion etching process and the sputtering process are performed, An outlet end 510 of the carrying-out cavity 51 sends out the continuous coating system of this embodiment of the present invention.
更具體地來說,當位在該載盤6上的該待處理工件於該蝕刻腔體31內執行該反應式離子蝕刻製程前,承載該載盤6與該待處理工件的該平台332是位在如圖2與圖3所示的該載送位置,以令該載盤6位在該輸送機構7的掣動單元71上。如圖4~6所示,當位在該載盤6上的該待處理工件於該蝕刻腔體31內實際執行該反應式離子蝕刻製程時,承載有該載盤6與該待處理工件的該平台332是朝上位移至該夾持位置以接觸該電漿侷限單元32的該等金屬彈片323,此時電連接於該電源供應器並作為該第一電極用的該蝕刻腔體31是透過該匹配器對彼此連接的該蝕刻腔體31與該電漿侷限單元32(即,該金屬遮罩321、該等金屬圍框322、該金屬紗網324與該等金屬彈片323)提供該接地電位,並同時對做為該第二電極用的該載盤6提供該射頻(r.f.)電位從而令該反應式氣體在該蝕刻腔體31的空間310中產生該電漿,以令被該載盤6所承載之該待處理工件位於該蝕刻腔體31內執行一電容式耦合電漿反應式離子蝕刻(capacitively coupled plasma RIE;簡稱CCP-RIE)模式之乾式蝕刻。本案僅以CCP-RIE模式為例做說明,但須了解的是,本案之電漿侷限單元32亦可適用於帶有感應電磁線圈的ICP-RIE模式;因此,本發明該實施例並不限於該CCP-RIE模式之乾式蝕刻,於此合先敘明。More specifically, when the workpiece to be processed on the carrier plate 6 performs the reactive ion etching process in the etching chamber 31, the platform 332 carrying the carrier plate 6 and the workpiece to be processed is The carrying position is shown in FIG. 2 and FIG. 3, so that the carrying tray 6 is located on the detent unit 71 of the conveying mechanism 7. As shown in FIGS. 4 to 6, when the workpiece to be processed on the carrier plate 6 actually performs the reactive ion etching process in the etching cavity 31, the carrier plate 6 and the workpiece to be processed are carried. The platform 332 is moved upward to the clamping position to contact the metal domes 323 of the plasma confinement unit 32. At this time, the etching cavity 31 electrically connected to the power supply and used as the first electrode is The etching cavity 31 and the plasma confinement unit 32 (ie, the metal mask 321, the metal enclosure 322, the metal gauze 324, and the metal dome 323) connected to each other are provided through the matcher. Ground potential, and at the same time provide the radio frequency (rf) potential to the carrier 6 as the second electrode, so that the reactive gas generates the plasma in the space 310 of the etching cavity 31, so that the plasma The workpiece to be processed carried by the carrier 6 is located in the etching cavity 31 and performs a dry etching in a capacitively coupled plasma RIE (CCP-RIE) mode. This case only uses the CCP-RIE mode as an example, but it must be understood that the plasma limiting unit 32 in this case can also be applied to the ICP-RIE mode with an induction electromagnetic coil; therefore, this embodiment of the present invention is not limited to The dry etching of the CCP-RIE mode is described here first.
根據上段說明可知,本發明該實施例之連續式鍍膜系統除了透過連接於該蝕刻腔體31的該金屬遮罩321以令該載盤6於該反應式離子蝕刻裝置3之蝕刻腔體31空間310中執行該該反應式離子蝕刻製程時,該電漿是可被侷限在該載盤6的上方外,更可藉由該電漿侷限單元32的該等金屬圍框322與該金屬紗網324以令該電漿被侷限在該載盤6的一周緣,並藉該等金屬彈片323以提升該平台332與位處於下方處的該金屬圍框322間的電性接觸使該接地電位的穩定性提升,從而透過該感應電磁場來增加電漿密度。According to the above description, it can be known that in addition to the continuous coating system of the embodiment of the present invention, in addition to passing through the metal mask 321 connected to the etching chamber 31, the space of the carrier 6 in the etching chamber 31 of the reactive ion etching apparatus 3 When the reactive ion etching process is performed in 310, the plasma can be confined outside the carrier plate 6, and the metal enclosure 322 and the metal gauze of the plasma confinement unit 32 can also be confined. 324, so that the plasma is confined to the periphery of the carrier 6, and the metal shrapnel 323 is used to enhance the electrical contact between the platform 332 and the metal enclosure 322 located below to make the ground potential The stability is improved, thereby increasing the plasma density through the induced electromagnetic field.
此處更值得一提的是,本發明除了透過該電漿侷限單元32令該電漿被侷限在該載盤6的上方與周緣以藉此增加離子轟擊的程度外,該載盤6在經過該濺鍍裝置4之濺鍍腔體41中執行完該濺鍍製程後所殘留在該載盤6周緣處的鍍膜物,更可藉由下一個循環的反應式離子蝕刻製程來帶走殘留在該載盤6周緣處的鍍膜物,且經實施該反應式離子蝕刻製程中所產生的副產物(by product)亦可一併自該等抽氣口3112被帶離該蝕刻腔體31。It is more worth mentioning here that in addition to the fact that the plasma is confined above and around the carrier plate 6 by the plasma confinement unit 32 to increase the degree of ion bombardment, the present invention In the sputtering chamber 41 of the sputtering device 4, the plating residues remaining on the periphery of the carrier 6 after the sputtering process is performed can be taken away by the reactive ion etching process in the next cycle. The coatings at the periphery of the carrier 6 and the by-products generated during the implementation of the reactive ion etching process can also be taken away from the etching cavity 31 from the suction ports 3112.
綜上所述,本發明具有反應式離子蝕刻功能的連續式鍍膜系統,可透過該電漿侷限單元32令該電漿被侷限在該載盤6的上方與周緣,以藉此增加電場的均勻性以及離子轟擊的程度,該載盤6在經過該濺鍍裝置4之濺鍍腔體41中執行完該濺鍍製程後所殘留在該載盤6周緣處的鍍膜物,更可藉由下一個循環的反應式離子蝕刻製程來帶走殘留在該載盤6周緣處的鍍膜物,且於實施該反應式離子蝕刻製程中所產生的副產物亦可一併被帶走,從而在提升生產效率的前提下,解決RIE之電場均勻性的問題,故確實能達成本發明的目的。In summary, the continuous coating system with reactive ion etching function of the present invention can restrict the plasma to the upper and peripheral edges of the carrier plate 6 through the plasma limiting unit 32, thereby increasing the uniformity of the electric field. The degree of ion bombardment and the degree of ion bombardment. After the carrier plate 6 has passed through the sputtering chamber 41 of the sputtering device 4 after performing the sputtering process, the plated objects remaining on the periphery of the carrier plate 6 can be further reduced by A cyclic reactive ion etching process is used to remove the coatings remaining on the 6 periphery of the carrier, and the by-products generated during the implementation of the reactive ion etching process can also be taken away, thereby improving production. Under the premise of efficiency, the problem of the electric field uniformity of RIE is solved, so it can indeed achieve the purpose of cost invention.
惟以上所述者,僅為本發明的實施例而已,當不能以此限定本發明實施的範圍,凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾,皆仍屬本發明專利涵蓋的範圍內。However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited by this, any simple equivalent changes and modifications made according to the scope of the patent application and the contents of the patent specification of the present invention are still Within the scope of the invention patent.
本發明的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一立體圖,說明本發明具有反應式離子蝕刻功能的連續式鍍膜系統的一實施例; 圖2是一局部立體剖開示意圖,說明本發明該實施例之一反應式離子蝕刻裝置之一升降單元的一平台位於一載送位置時的實施態樣; 圖3是圖2的一側視剖視圖; 圖4是一局部立體剖開示意圖,說明本發明該實施例之反應式離子蝕刻裝置之升降單元的平台位於一夾持位置時的實施態樣; 圖5是圖4的一側視剖視圖;及 圖6是圖5的一局部放大圖,說明當本發明該實施例之升降單元的平台位於該夾持位置時,其與一電漿侷限單元的複數金屬彈片間的關係。Other features and effects of the present invention will be clearly presented in the embodiment with reference to the drawings, in which: FIG. 1 is a perspective view illustrating an embodiment of the continuous coating system having a reactive ion etching function of the present invention; FIG. 2 is a partial three-dimensional cut-away schematic diagram illustrating an embodiment when a platform of a lifting unit of a reactive ion etching device according to this embodiment of the present invention is located at a carrying position; FIG. 3 is a side sectional view of FIG. 2 FIG. 4 is a partial three-dimensional cross-sectional schematic diagram illustrating an embodiment when the platform of the lifting unit of the reactive ion etching device of the embodiment of the present invention is located in a clamping position; FIG. 5 is a side cross-sectional view of FIG. 4; And FIG. 6 is a partial enlarged view of FIG. 5, illustrating the relationship between the platform of the lifting unit of the embodiment of the present invention and the plurality of metal shrapnels of a plasma confinement unit when the platform is located at the clamping position.
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