TWM532095U - Movable pallet device for production line - Google Patents

Movable pallet device for production line Download PDF

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Publication number
TWM532095U
TWM532095U TW105209336U TW105209336U TWM532095U TW M532095 U TWM532095 U TW M532095U TW 105209336 U TW105209336 U TW 105209336U TW 105209336 U TW105209336 U TW 105209336U TW M532095 U TWM532095 U TW M532095U
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Taiwan
Prior art keywords
insulating
plate
electrode plate
frame
production line
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TW105209336U
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Chinese (zh)
Inventor
Cheng-Peng Ye
Hui-Jia Su
Chong-Yu Ye
Zong-Wei Zhang
Yi-Yuan Huang
Wan-Yu Huang
mu-sen Lu
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Linco Technology Co Ltd
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Priority to TW105209336U priority Critical patent/TWM532095U/en
Publication of TWM532095U publication Critical patent/TWM532095U/en

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Description

用於生產線的可移動式載盤裝置Mobile carrier device for production line

本新型是有關於一種載盤裝置,特別是指一種用於生產線的可移動式載盤裝置。The present invention relates to a carrier device, and more particularly to a portable carrier device for a production line.

美國第6,344,106 B1核准公告號專利案(以下稱前案)公開一種增進蝕刻速率(etching rate)均勻性的技術。參閱圖1,前案是透過顯示於圖1中的靜電夾頭(electrostatic chuck)單元1來改善蝕刻速率。詳細地來說,該靜電夾頭單元1是被設置於一電漿處理裝置(plasma processing apparatus)2的一晶圓處理腔體(wafer processing chamber)20內,且是用以作為承載一待處理晶圓21的載盤使用,亦是作為一點燃一電漿的電極使用。於實際實施蝕刻時,是在該晶圓處理腔體20內引入一反應氣體(圖未示),並對該靜電夾頭單元(也就是,電極)1與設置於該晶圓處理腔體20內的另一電極(圖未示)提供一射頻(radio frequency;以下稱RF)電源(圖未示),以令該反應氣體裂解成該電漿。The U.S. Patent No. 6,344,106 B1 Approved Publication No. (hereinafter referred to as the prior) discloses a technique for improving the uniformity of the etching rate. Referring to Figure 1, the previous example is to improve the etch rate through the electrostatic chuck unit 1 shown in Figure 1. In detail, the electrostatic chuck unit 1 is disposed in a wafer processing chamber 20 of a plasma processing apparatus 2 and is used as a carrier to be processed. The carrier of the wafer 21 is also used as an electrode for igniting a plasma. When the etching is actually performed, a reactive gas (not shown) is introduced into the wafer processing chamber 20, and the electrostatic chuck unit (ie, the electrode) 1 and the wafer processing chamber 20 are disposed. The other electrode (not shown) provides a radio frequency (hereinafter referred to as RF) power source (not shown) to cleave the reaction gas into the plasma.

如圖1所示,該靜電夾頭單元1包括一提供有該RF電源(圖未示)的靜電夾頭11、一內部邊緣環形構件12,及一外部邊緣環形構件13。該靜電夾頭11具有一固定於該晶圓處理腔體20之一底壁的基座部111,及一自該基座部111之一頂緣朝上凸伸並供承載該待處理晶圓21的承載部112,且該基座部111與該承載部112共同定義出一缺口113。As shown in FIG. 1, the electrostatic chuck unit 1 includes an electrostatic chuck 11 provided with the RF power source (not shown), an inner edge annular member 12, and an outer edge annular member 13. The electrostatic chuck 11 has a base portion 111 fixed to a bottom wall of the wafer processing chamber 20, and a protruding upward from a top edge of the base portion 111 for carrying the wafer to be processed. The carrying portion 112 of the 21 and the base portion 111 and the carrying portion 112 define a notch 113.

該內部邊緣環形構件12設置於該靜電夾頭11的缺口113,並圍繞該承載部112之一周緣及該待處理晶圓21之一周緣。該外部邊緣環形構件13圍繞該靜電夾頭11之基座部111的一周緣與該內部邊緣環形構件12。在該前案中,該內部邊緣環形構件12與該外部邊緣環形構件13是由一絕緣材料或一介電材料所構成,其藉由該內部邊緣環形構件12與該外部邊緣環形構件13的絕緣特性以形成RF耦合,並令鄰近該待處理晶圓21之一表面的一電漿鞘層 (plasma sheath)22分布均勻。The inner edge annular member 12 is disposed on the notch 113 of the electrostatic chuck 11 and surrounds a periphery of the carrier portion 112 and a periphery of the wafer 21 to be processed. The outer edge annular member 13 surrounds the peripheral edge of the base portion 111 of the electrostatic chuck 11 and the inner edge annular member 12. In the foregoing case, the inner edge annular member 12 and the outer edge annular member 13 are formed of an insulating material or a dielectric material, and the inner edge annular member 12 is insulated from the outer edge annular member 13 by the inner edge annular member 12. The characteristics are such that RF coupling is formed and a plasma sheath 22 adjacent to one surface of the wafer 21 to be processed is uniformly distributed.

該前案所公開的靜電夾頭單元1雖然可以增進蝕刻速率的均勻性;然而,該靜電夾頭11是被固定於該晶圓處理腔體20的底壁。換句話說,用來做為電極使用並做為承載該待處理晶圓21的載盤使用的該靜電夾頭單元1只適用固定於單一腔體式的電漿蝕刻裝置,其難以應用於廣為現階段之半導體、光學鍍膜等相關業界所使用的批次式(batch)生產線或連續型(in-line)生產線之電漿蝕刻裝置。The electrostatic chuck unit 1 disclosed in the foregoing case can improve the uniformity of the etching rate; however, the electrostatic chuck 11 is fixed to the bottom wall of the wafer processing chamber 20. In other words, the electrostatic chuck unit 1 used as an electrode and used as a carrier for carrying the wafer 21 to be processed is only suitable for a plasma etching apparatus fixed to a single cavity type, which is difficult to apply to a wide range. A plasma etching apparatus for a batch production line or an in-line production line used in related industries such as semiconductors and optical coatings at the present stage.

經上述說明可知,改良載盤裝置的結構以用於生產線並藉此縮減半導體、光學鍍膜等相關業界的生產工時,是此技術領域的相關技術人員所待突破的難題。As can be seen from the above description, improving the structure of the tray device for use in a production line and thereby reducing the production time of the related industries such as semiconductors and optical coatings is a problem to be solved by those skilled in the art.

因此,本新型之目的,即在提供一種用於生產線的可移動式載盤裝置。Accordingly, it is an object of the present invention to provide a portable carrier device for a production line.

於是,本新型用於生產線的可移動式載盤裝置,是用以承載一待處理基板並於一生產線中的一傳送機構上移動,其包含一金屬承板、一電極板,及一絕緣單元。該金屬承板能移動地位於該傳送機構上,並包括至少一穿孔。該電極板設置於該金屬承板之上,並供承載該待處理基板。該電極板具有至少一面向該金屬承板之穿孔,且裸露於該金屬承板之穿孔外的電源載入區。該絕緣單元設置於該金屬承板上且夾置於該金屬承板與該電極板間,並圍繞該電極板的一周緣及該待處理基板的一周緣。該絕緣單元具有至少一與該金屬承板之穿孔相通並裸露出該電極板之電源載入區的穿孔。Therefore, the movable tray device for the production line of the present invention is for carrying a substrate to be processed and moving on a conveying mechanism in a production line, which comprises a metal carrier plate, an electrode plate, and an insulation unit. . The metal carrier is movably located on the transport mechanism and includes at least one perforation. The electrode plate is disposed on the metal carrier plate and carries the substrate to be processed. The electrode plate has at least one perforation facing the metal carrier and is exposed to a power loading region outside the perforation of the metal carrier. The insulating unit is disposed on the metal carrier plate and sandwiched between the metal carrier plate and the electrode plate, and surrounds a peripheral edge of the electrode plate and a peripheral edge of the substrate to be processed. The insulating unit has at least one through hole communicating with the through hole of the metal plate and exposing the power loading region of the electrode plate.

本新型之功效在於:藉由該金屬承板及該絕緣單元以令該待處理基板之一上表面於實施一電漿蝕刻程序時,輔助電漿橫越該待處理基板上表面以增進該待處理基板之表面處理的均勻性;此外,本新型之可移動式載盤裝置能於該生產線內的傳送機構上帶著該待處理基板移動,可供現階段廣為半導體、光學鍍膜等相關業界使用的批次式生產線或連續型生產線使用,有利於縮減半導體、光學鍍膜等相關產業的生產工時。The effect of the present invention is to enhance the standby by the auxiliary plasma across the upper surface of the substrate to be processed by the metal carrier and the insulating unit when the upper surface of one of the substrates to be processed is subjected to a plasma etching process. The uniformity of the surface treatment of the substrate is processed; in addition, the movable carrier device of the present invention can move the substrate to be processed on the conveying mechanism in the production line, and can be widely used in the related industries such as semiconductor and optical coating at present. The use of batch production lines or continuous production lines is conducive to reducing the production man-hours of semiconductors, optical coatings and other related industries.

在本新型被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.

如圖2與圖3所示,本新型之用於生產線的可移動式載盤裝置C的一第一實施例,是用以承載一待處理基板7並於一連續型生產線9中的一傳送機構92上移動。詳細地來說,該連續型生產線9具有一腔體單元91及設置於該腔體單元91內的該傳送機構92。該腔體單元91沿一傳送方向X依序具有一載入腔體911、一蝕刻腔體(etching chamber)912、一濺鍍腔體(sputtering chamber)913,及一卸載腔體914。各腔體911、912、913、914內對應設置有該傳送機構92的一組輸送組件921。該可移動式載盤裝置C是透過各組輸送組件921的複數個滾輪922,自該載入腔體911的一入口端901進入該載入腔體911,並沿該傳送方向X令該可移動式載盤裝置C承載著其上方的該待處理基板7依序移動至該蝕刻腔體912施予一電漿蝕刻程序(plasma etching process)與該濺鍍腔體913施予一鍍膜程序(coating process),並於該卸載腔體914的一出口端902使該可移動式載盤裝置C移出該連續型生產線9。本新型該第一實施例是以該連續型生產線9為例做說明,但不限於此。As shown in FIG. 2 and FIG. 3, a first embodiment of the movable tray device C for a production line of the present invention is for carrying a substrate to be processed 7 and transmitting it in a continuous production line 9. The mechanism 92 moves. In detail, the continuous production line 9 has a cavity unit 91 and the transfer mechanism 92 disposed in the cavity unit 91. The cavity unit 91 has a loading cavity 911, an etching chamber 912, a sputtering chamber 913, and an unloading cavity 914 in a transport direction X. A plurality of transport assemblies 921 of the transport mechanism 92 are disposed in each of the cavities 911, 912, 913, and 914. The movable tray device C is a plurality of rollers 922 passing through each group of conveying assemblies 921, and enters the loading chamber 911 from an inlet end 901 of the loading chamber 911, and the direction is along the conveying direction X. The mobile substrate device C carries the substrate 7 to be processed thereon to be sequentially moved to the etching chamber 912 to apply a plasma etching process and the sputtering chamber 913 to apply a coating process ( The coating process and the removable tray device C are moved out of the continuous line 9 at an outlet end 902 of the unloading chamber 914. The first embodiment of the present invention is described by taking the continuous production line 9 as an example, but is not limited thereto.

此處需補充說明的是,當本新型該第一實施例之可移動式載盤裝置C於該濺鍍腔體913內實施多次該鍍膜程序以於表其表面累積有該鍍膜程序所產生的鍍膜時,仍可在完成該鍍膜程序後,自該卸載腔體914的出口端902移出,以透過適當的手段來移除累積於該可移動式載盤裝置C表面的鍍膜。It should be noted that, in the movable tray device C of the first embodiment of the present invention, the coating process is performed multiple times in the sputtering chamber 913 to accumulate the surface of the surface. The coating may still be removed from the exit end 902 of the unloading cavity 914 after completion of the coating process to remove the coating deposited on the surface of the movable carrier device C by appropriate means.

參閱圖4、圖5與圖6,本新型該第一實施例之可移動式載盤裝置C包含一金屬承板3、一電極板4、一絕緣單元5,及三個金屬導體6。Referring to FIG. 4, FIG. 5 and FIG. 6, the movable carrier device C of the first embodiment of the present invention comprises a metal carrier plate 3, an electrode plate 4, an insulation unit 5, and three metal conductors 6.

該金屬承板3能移動地位於該傳送機構(見圖2)92上,並包括三個穿孔30。The metal carrier 3 is movably located on the transport mechanism (see Fig. 2) 92 and includes three perforations 30.

該電極板4設置於該金屬承板3之上,並供承載該待處理基板7。該電極板4包括一周緣41、一承載部42及一底座部43。該承載部42供承載該待處理基板7,並具有彼此銜接的一周緣區421及一底緣區422。該底座部43是自該電極板4之承載部42的底緣區422朝外延伸,並具有三個電源載入區431及一周緣區432。該電極板4的各電源載入區431是對應面向該金屬承板3之各穿孔30,且對應裸露於該金屬承板3之各穿孔30外。該承載部42的周緣區421與該底座部43的周緣區432共同定義出該電極板4的該周緣41。The electrode plate 4 is disposed on the metal carrier 3 and carries the substrate 7 to be processed. The electrode plate 4 includes a peripheral edge 41, a carrying portion 42 and a base portion 43. The carrying portion 42 is configured to carry the substrate 7 to be processed, and has a peripheral edge region 421 and a bottom edge region 422 that are connected to each other. The base portion 43 extends outward from the bottom edge region 422 of the carrier portion 42 of the electrode plate 4 and has three power loading regions 431 and a peripheral edge region 432. Each of the power loading regions 431 of the electrode plate 4 corresponds to each of the through holes 30 facing the metal carrier 3 and corresponding to the respective through holes 30 exposed to the metal carrier 3. The peripheral edge portion 421 of the carrier portion 42 and the peripheral edge region 432 of the base portion 43 define the peripheral edge 41 of the electrode plate 4.

該絕緣單元5設置於該金屬承板3上,且夾置於該金屬承板3與該電極板4間,並圍繞該電極板4的周緣41及該待處理基板7的一周緣。該絕緣單元5包括一絕緣板51及一絕緣框52。該絕緣板51具有一基部511及一框部512。該絕緣板51的基部511是夾置於該金屬承板3與該電極板4的底座部43間,並具有三個穿孔510。該絕緣板51之基部511的各穿孔510是對應與該金屬承板3之各穿孔30相通,並對應裸露出該電極板4之各電源載入區431。該絕緣板51的框部512是自該絕緣板51的基部511的一周緣朝上凸伸,以令該絕緣板51形成有一容置該電極板4的凹槽513,且該絕緣板51之框部512的一高度是高於該電極板4之承載部42的一高度,以令該絕緣板51的框部512及該電極板4的承載部42間共同定義出一容置該絕緣框52的環形空間,且該絕緣框52的一高度是足以圍繞該待處理基板7的周緣。為節省本新型該第一實施例之可移動式載盤裝置C的用料成本,較佳地,絕緣板51是由玻璃所構成,且該絕緣框52是由石英所構成。The insulating unit 5 is disposed on the metal carrier 3 and sandwiched between the metal carrier 3 and the electrode plate 4 and surrounds the peripheral edge 41 of the electrode plate 4 and the peripheral edge of the substrate 7 to be processed. The insulating unit 5 includes an insulating plate 51 and an insulating frame 52. The insulating plate 51 has a base portion 511 and a frame portion 512. The base portion 511 of the insulating plate 51 is interposed between the metal carrier plate 3 and the base portion 43 of the electrode plate 4, and has three through holes 510. Each of the through holes 510 of the base portion 511 of the insulating plate 51 is corresponding to each of the through holes 30 of the metal carrier plate 3, and corresponding to each of the power loading regions 431 of the electrode plate 4. The frame portion 512 of the insulating plate 51 protrudes upward from a peripheral edge of the base portion 511 of the insulating plate 51, so that the insulating plate 51 is formed with a recess 513 for accommodating the electrode plate 4, and the insulating plate 51 is A height of the frame portion 512 is higher than a height of the bearing portion 42 of the electrode plate 4, so that the frame portion 512 of the insulating plate 51 and the carrying portion 42 of the electrode plate 4 jointly define an insulating frame. An annular space of 52, and a height of the insulating frame 52 is sufficient to surround the circumference of the substrate 7 to be processed. In order to save the material cost of the movable carrier device C of the first embodiment of the present invention, preferably, the insulating plate 51 is made of glass, and the insulating frame 52 is made of quartz.

該等金屬導體6是用以供導入電源,且各金屬導體6是對應位於該金屬承板3之各穿孔30及該絕緣單元5之該絕緣板51的各穿孔510內,並對應接觸該電極板4的各電源載入區431。在本新型該第一實施例中,各金屬導體6是透過複數螺栓61以自其金屬導體6的一下表面朝該電極板4之各電源載入區431螺入,從而使各金屬導體6是對應接觸該電極板4的各電源載入區431。The metal conductors 6 are for introducing power into the power supply, and each of the metal conductors 6 is corresponding to each of the through holes 510 of the insulating plate 51 of the metal plate 3 and the insulating plate 5 of the insulating unit 5, and correspondingly contacts the electrode. Each power source of the board 4 is loaded into the area 431. In the first embodiment of the present invention, each of the metal conductors 6 is inserted through the plurality of bolts 61 from the lower surface of the metal conductor 6 toward the respective power loading regions 431 of the electrode plate 4, so that the metal conductors 6 are Corresponding to each power loading region 431 contacting the electrode plate 4.

更具體地來說,如圖6所示,本新型該第一實施例是在各金屬導體6提供一RF電源並使該金屬承板3接地,以令該待處理基板7於該蝕刻腔體912中實施該電漿蝕刻程序時,避免該電極板4與該蝕刻腔體912內之另一電極板(圖未示)兩者間所產生的電場形成在該電極板4的下表面,並使電場均勻地集中在該待處理基板7的一上表面。More specifically, as shown in FIG. 6, the first embodiment of the present invention provides an RF power supply to each of the metal conductors 6 and grounds the metal carrier 3 so that the substrate 7 to be processed is in the etching cavity. When the plasma etching process is performed in 912, an electric field generated between the electrode plate 4 and another electrode plate (not shown) in the etching cavity 912 is prevented from being formed on the lower surface of the electrode plate 4, and The electric field is uniformly concentrated on an upper surface of the substrate 7 to be processed.

參閱圖7,本新型之用於生產線的可移動式載盤裝置C的一第二實施例,大致上是相同於該第一實施例,其不同的地方在於,本新型該第二實施例之該絕緣板51之框部512的高度是實質等高於該電極板4之底座部43的一高度,該絕緣單元5的絕緣框52是設置於該電極板4之底座部43的周緣區432與該絕緣板51的框部52上。在本新型該第二實施例中,該絕緣單元5之絕緣框52是一厚度等厚的平板。Referring to FIG. 7, a second embodiment of the movable tray device C for a production line of the present invention is substantially the same as the first embodiment, and the difference lies in the second embodiment of the present invention. The height of the frame portion 512 of the insulating plate 51 is substantially higher than a height of the base portion 43 of the electrode plate 4. The insulating frame 52 of the insulating unit 5 is disposed at a peripheral portion 432 of the base portion 43 of the electrode plate 4. It is on the frame portion 52 of the insulating plate 51. In the second embodiment of the present invention, the insulating frame 52 of the insulating unit 5 is a flat plate having a thickness equal to that.

參閱圖8,本新型之用於生產線的可移動式載盤裝置C的一第三實施例,大致上是相同於該第二實施例,其不同的地方在於,本新型該第三實施例之該絕緣單元5之絕緣框52的厚度是背向該電極板4遞減。Referring to FIG. 8, a third embodiment of the movable tray device C for a production line of the present invention is substantially the same as the second embodiment, and the difference lies in the third embodiment of the present invention. The thickness of the insulating frame 52 of the insulating unit 5 is decreased toward the electrode plate 4.

參閱圖9、圖6及附件1,顯示有本新型該第一實施例之電勢分布圖,其是透過數值模擬以令該第一實施例之可移動式載盤裝置C模擬於該電漿蝕刻程序的環境所取得。由圖9、圖6及附件1顯示可知,雖然電勢分布是自該待處理基板7的中心及其上表面分別朝其周緣及朝上遞減;然而,該待處理基板7的周緣與該電極板4的周緣41因受該絕緣單元5所圍繞,以致於呈遞減的電勢是分布在該絕緣單元5的周緣,可令該待處理基板7上表面所分布的電位均勻且趨近500 V。又,該電極板4因設置於經接地後的該金屬承板3之上,以致於該電極板4下方未分布有高電位的電勢,證實電場可集中在該待處理基板7的上表面,以提供一均勻的電場。此處需補充說明的是,於實際實施該電漿蝕刻程序時,電勢可依實際需求達數個kV;因此,本新型僅以500 V為例做說明,且不限於此。Referring to FIG. 9, FIG. 6 and FIG. 1, a potential distribution diagram of the first embodiment of the present invention is shown, which is simulated by numerical simulation to simulate the movable carrier device C of the first embodiment. The environment of the program is obtained. As shown in FIG. 9 , FIG. 6 and FIG. 1 , the potential distribution is decreased from the center of the substrate 7 to be processed and its upper surface toward the periphery and upward thereof; however, the periphery of the substrate 7 to be processed and the electrode plate The peripheral edge 41 of 4 is surrounded by the insulating unit 5, so that the decreasing potential is distributed around the periphery of the insulating unit 5, so that the potential distributed on the upper surface of the substrate 7 to be processed is uniform and approaches 500 V. Moreover, the electrode plate 4 is disposed on the grounded metal plate 3 such that a potential of a high potential is not distributed under the electrode plate 4, and it is confirmed that the electric field can be concentrated on the upper surface of the substrate 7 to be processed. To provide a uniform electric field. It should be added here that when the plasma etching process is actually implemented, the potential can reach several kV according to actual needs; therefore, the present invention is only described by taking 500 V as an example, and is not limited thereto.

經上述本新型各實施例及該第一實施例之數值模擬的詳細說明可知,本新型該第一實施例不只因其金屬承板3及其絕緣單元5可令該待處理基板7之上表面於該蝕刻腔體912內實施該電漿蝕刻程序時,輔助電漿橫越該待處理基板7之上表面以增進該待處理基板7之表面處理的均勻性;此外,本新型該等實施例之可移動式載盤裝置C,可於該連續型生產線9內的傳送機構92上沿該傳送方向X依序移動經過該載入腔體911、該蝕刻腔體912、該濺鍍腔體913與該卸載腔體914,以供現階段廣為半導體、光學鍍膜等相關業界使用的連續型生產線使用,有利於縮減半導體、光學鍍膜等相關產業的生產工時。According to the detailed description of the numerical simulation of the various embodiments of the present invention and the first embodiment, the first embodiment of the present invention can not only make the upper surface of the substrate 7 to be processed because of the metal carrier 3 and the insulating unit 5 thereof. When the plasma etching process is performed in the etching cavity 912, the auxiliary plasma traverses the upper surface of the substrate 7 to be processed to improve the uniformity of the surface treatment of the substrate 7 to be processed; further, the novel embodiments of the present invention The movable tray device C can be sequentially moved along the transport direction X in the transport mechanism 92 in the continuous production line 9 through the loading chamber 911, the etching chamber 912, and the sputtering chamber 913. The unloading cavity 914 is used in a continuous production line which is widely used in industries such as semiconductors and optical coatings at present, and is advantageous for reducing the production man-hours of semiconductors, optical coatings and the like.

綜上所述,本新型用於生產線的可移動式載盤裝置C不只可令該待處理基板7之上表面於實施該電漿蝕刻程序時,輔助電漿橫越該待處理基板7之上表面以增進該待處理基板7之表面處理的均勻性,也可在該連續型生產線9內的傳送機構92上帶著該待處理基板7沿該傳送方向X移動以供現階段廣為業界使用之批次式生產線或連續型生產線使用,從而縮減半導體、光學鍍膜等相關產業所需耗費的生產工時。因此,確實可達到本新型之目的。In summary, the movable tray device C for the production line of the present invention can not only allow the upper surface of the substrate 7 to be processed to align across the substrate 7 to be processed when the plasma etching process is performed. The surface is used to improve the uniformity of the surface treatment of the substrate 7 to be processed, and the substrate to be processed 7 can be moved along the transport direction X on the transport mechanism 92 in the continuous type production line 9 for the current stage of use in the industry. The use of batch production lines or continuous production lines reduces the production time required for semiconductor, optical coating and other related industries. Therefore, the purpose of the present invention can be achieved.

惟以上所述者,僅為本新型之較佳實施例而已,當不能以此限定本新型實施之範圍,凡是依本新型申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本新型專利涵蓋之範圍內。However, the above is only a preferred embodiment of the present invention, and when it is not possible to limit the scope of the present invention, any simple equivalent changes and modifications made in accordance with the scope of the present patent application and the contents of the patent specification are It is still within the scope of this new patent.

C‧‧‧可移動式載盤裝置
52‧‧‧絕緣框
3‧‧‧金屬承板
6‧‧‧金屬導體
30‧‧‧穿孔
61‧‧‧螺栓
4‧‧‧電極板
7‧‧‧待處理基板
41‧‧‧周緣
9‧‧‧連續型生產線
42‧‧‧承載部
901‧‧‧入口端
421‧‧‧周緣區
902‧‧‧出口端
422‧‧‧底緣區
91‧‧‧腔體單元
43‧‧‧底座部
911‧‧‧載入腔體
431‧‧‧電源載入區
912‧‧‧蝕刻腔體
432‧‧‧周緣區
913‧‧‧濺鍍腔體
5‧‧‧絕緣單元
914‧‧‧卸載腔體
51‧‧‧絕緣板
92‧‧‧傳送機構
510‧‧‧穿孔
921‧‧‧輸送組件
511‧‧‧基部
922‧‧‧滾輪
512‧‧‧框部
X‧‧‧傳送方向
513‧‧‧凹槽
C‧‧‧Removable carrier device
52‧‧‧Insulation frame
3‧‧‧Metal board
6‧‧‧Metal conductor
30‧‧‧Perforation
61‧‧‧ bolt
4‧‧‧Electrode plate
7‧‧‧Substrate to be processed
41‧‧‧ Periphery
9‧‧‧Continuous production line
42‧‧‧Loading Department
901‧‧‧ entrance end
421‧‧‧ Peripheral area
902‧‧‧export end
422‧‧‧Bottom area
91‧‧‧ cavity unit
43‧‧‧Base section
911‧‧‧Loading cavity
431‧‧‧Power loading area
912‧‧‧etching cavity
432‧‧‧ Peripheral area
913‧‧‧Sputter chamber
5‧‧‧Insulation unit
914‧‧‧Unloading the cavity
51‧‧‧Insulation board
92‧‧‧Transportation agency
510‧‧‧Perforation
921‧‧‧Transport components
511‧‧‧ base
922‧‧‧Roller
512‧‧‧ Frame Department
X‧‧‧Transfer direction
513‧‧‧ Groove

本新型之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一正視示意圖,說明美國第6,344,106 B1核准公告號專利案所公開的一種電漿處理裝置; 圖2是一局部俯視示意圖,說明本新型用於生產線的可移動式載盤裝置的一第一實施例及其所使用的一連續型生產線; 圖3是沿圖2的直線III-III所取得的一正視剖視圖,說明本新型該第一實施例於一輸送組件上的實施態樣; 圖4是一立體圖,說明本發明該第一實施例的俯視結構; 圖5是一立體圖,說明本新型該第一實施例的仰視結構; 圖6是沿圖3的直線VI-VI所取得的一側視剖視圖,說明本新型該第一實施例的細部結構; 圖7是一側視剖視圖,說明本新型用於生產線的可移動式載盤裝置的一第二實施例; 圖8是一側視剖視圖,說明本新型用於生產線的可移動式載盤裝置的一第三實施例;及 圖9是一電勢分布(electric potential distribution)圖,說明本新型該第一實施例的電位分布。Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: Figure 1 is a front elevational view showing a plasma processing apparatus disclosed in U.S. Patent No. 6,344,106, the disclosure of which is incorporated herein by reference. Figure 2 is a partial top plan view showing a first embodiment of the movable tray device of the present invention for use in a production line and a continuous production line used; Figure 3 is taken along line III-III of Figure 2 FIG. 4 is a perspective view showing the top view structure of the first embodiment of the present invention; FIG. 5 is a perspective view showing the new type of the first embodiment of the present invention; FIG. FIG. 6 is a side cross-sectional view taken along line VI-VI of FIG. 3, illustrating a detailed structure of the first embodiment of the present invention; FIG. 7 is a side cross-sectional view showing the present embodiment A second embodiment of a new type of portable carrier device for a production line; FIG. 8 is a side elevational cross-sectional view showing a third embodiment of the movable carrier device for a production line of the present invention; 9 is an electric potential distribution diagram illustrating the potential distribution of the first embodiment of the present invention.

3‧‧‧金屬承板 3‧‧‧Metal board

30‧‧‧穿孔 30‧‧‧Perforation

4‧‧‧電極板 4‧‧‧Electrode plate

41‧‧‧周緣 41‧‧‧ Periphery

42‧‧‧承載部 42‧‧‧Loading Department

421‧‧‧周緣區 421‧‧‧ Peripheral area

422‧‧‧底緣區 422‧‧‧Bottom area

43‧‧‧底座部 43‧‧‧Base section

51‧‧‧絕緣板 51‧‧‧Insulation board

510‧‧‧穿孔 510‧‧‧Perforation

511‧‧‧基部 511‧‧‧ base

512‧‧‧框部 512‧‧‧ Frame Department

513‧‧‧凹槽 513‧‧‧ Groove

52‧‧‧絕緣框 52‧‧‧Insulation frame

6‧‧‧金屬導體 6‧‧‧Metal conductor

61‧‧‧螺栓 61‧‧‧ bolt

431‧‧‧電源載入區 431‧‧‧Power loading area

432‧‧‧周緣區 432‧‧‧ Peripheral area

5‧‧‧絕緣單元 5‧‧‧Insulation unit

7‧‧‧待處理基板 7‧‧‧Substrate to be processed

912‧‧‧蝕刻腔體 912‧‧‧etching cavity

922‧‧‧滾輪 922‧‧‧Roller

Claims (8)

一種用於生產線的可移動式載盤裝置,是用以承載一待處理基板並於一生產線中的一傳送機構上移動,其包含: 一金屬承板,能移動地位於該傳送機構上並包括至少一穿孔; 一電極板,設置於該金屬承板之上並供承載該待處理基板,該電極板具有至少一面向該金屬承板之穿孔且裸露於該金屬承板之穿孔外的電源載入區;及 一絕緣單元,設置於該金屬承板上且夾置於該金屬承板與該電極板間並圍繞該電極板的一周緣及該待處理基板的一周緣,該絕緣單元具有至少一與該金屬承板之穿孔相通並裸露出該電極板之電源載入區的穿孔。A movable tray device for a production line for carrying a substrate to be processed and moving on a conveying mechanism in a production line, comprising: a metal carrier plate movably located on the conveying mechanism and including At least one through hole; an electrode plate disposed on the metal carrier and carrying the substrate to be processed, the electrode plate having at least one hole facing the metal plate and exposed to the through hole of the metal plate And an insulating unit disposed on the metal carrier plate and sandwiched between the metal carrier plate and the electrode plate and surrounding a peripheral edge of the electrode plate and a peripheral edge of the substrate to be processed, the insulating unit having at least A perforation is communicated with the perforation of the metal plate and the perforation of the power loading region of the electrode plate is exposed. 如請求項第1項所述的用於生產線的可移動式載盤裝置,還包含一用以供導入電源的金屬導體,該金屬導體位於該金屬承板之穿孔及該絕緣單元之穿孔內並接觸該電極板的該電源載入區。The movable tray device for a production line according to claim 1, further comprising a metal conductor for introducing a power source, the metal conductor being located in the through hole of the metal carrier and the through hole of the insulating unit Contacting the power loading region of the electrode plate. 如請求項第1項所述的用於生產線的可移動式載盤裝置,其中,該電極板包括一承載部及一底座部,該承載部供承載該待處理基板,並具有彼此銜接的一周緣區及一底緣區,該底座部是自該電極板之承載部的底緣區朝外延伸並具有該電源載入區及一周緣區,且該承載部的周緣區與該底座部的周緣區共同定義出該電極板的該周緣。The movable tray device for a production line according to claim 1, wherein the electrode plate comprises a bearing portion and a base portion for carrying the substrate to be processed and having a circumference that is connected to each other a rim portion and a bottom edge region, the base portion extending outward from a bottom edge region of the bearing portion of the electrode plate and having the power loading region and the peripheral edge region, and a peripheral portion of the bearing portion and the base portion The peripheral zone collectively defines the circumference of the electrode plate. 如請求項第3項所述的用於生產線的可移動式載盤裝置,其中,該絕緣單元包括一絕緣板及一絕緣框,該絕緣板具有一基部及一框部,該絕緣板的基部是夾置於該金屬承板與該電極板的底座部間並具有該絕緣單元的穿孔,該絕緣板的框部是自該絕緣板的基部的一周緣朝上凸伸以令該絕緣板形成有一容置該電極板的凹槽,且該絕緣板之框部的一高度是高於該電極板之承載部的一高度,以令該絕緣板的框部及該電極板的承載部間共同定義出一容置該絕緣框的環形空間,且該絕緣框的一高度是足以圍繞該待處理基板的周緣。The movable tray device for a production line according to claim 3, wherein the insulating unit comprises an insulating plate and an insulating frame, the insulating plate has a base portion and a frame portion, and the base portion of the insulating plate a perforation sandwiched between the metal plate and the base portion of the electrode plate and having the insulating unit, the frame portion of the insulating plate protruding upward from a peripheral edge of the base of the insulating plate to form the insulating plate a recess for accommodating the electrode plate, and a height of the frame portion of the insulating plate is higher than a height of the bearing portion of the electrode plate, so that the frame portion of the insulating plate and the bearing portion of the electrode plate are common An annular space is provided for accommodating the insulating frame, and a height of the insulating frame is sufficient to surround a circumference of the substrate to be processed. 如請求項第3項所述的用於生產線的可移動式載盤裝置,其中,該絕緣單元包括一絕緣板及一絕緣框,該絕緣板具有一基部及一框部,該絕緣板的基部是夾置於該金屬承板與該電極板的底座部間並具有該絕緣單元的穿孔,該絕緣板的框部是自該絕緣板的基部的一周緣朝上凸伸以令該絕緣板形成有一容置該電極板的凹槽,且該絕緣板之框部的一高度是實質等高於該電極板之底座部的一高度,該絕緣單元的絕緣框是設置於該電極板之底座部的周緣區與該絕緣板的框部上,且該絕緣框的一高度是足以圍繞該待處理基板的周緣。The movable tray device for a production line according to claim 3, wherein the insulating unit comprises an insulating plate and an insulating frame, the insulating plate has a base portion and a frame portion, and the base portion of the insulating plate a perforation sandwiched between the metal plate and the base portion of the electrode plate and having the insulating unit, the frame portion of the insulating plate protruding upward from a peripheral edge of the base of the insulating plate to form the insulating plate a recess for accommodating the electrode plate, and a height of the frame portion of the insulating plate is substantially higher than a height of the base portion of the electrode plate, and the insulating frame of the insulating unit is disposed at the base portion of the electrode plate The peripheral portion is on the frame portion of the insulating plate, and a height of the insulating frame is sufficient to surround the periphery of the substrate to be processed. 如請求項第5項所述的用於生產線的可移動式載盤裝置,其中,該絕緣單元之絕緣框是一厚度等厚的平板。The movable tray device for a production line according to claim 5, wherein the insulating frame of the insulating unit is a flat plate having a thickness equal to that. 如請求項第5項所述的用於生產線的可移動式載盤裝置,其中,該絕緣單元之絕緣框的厚度是背向該電極板遞減。The movable tray device for a production line according to Item 5, wherein the thickness of the insulating frame of the insulating unit is decreasing toward the electrode plate. 如請求項第4項至第7項任一項所述的用於生產線的可移動式載盤裝置,其中,該絕緣板是由玻璃所構成,且該絕緣框是由石英所構成。The movable tray device for a production line according to any one of claims 4 to 7, wherein the insulating plate is made of glass, and the insulating frame is made of quartz.
TW105209336U 2016-06-22 2016-06-22 Movable pallet device for production line TWM532095U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI665751B (en) * 2017-11-30 2019-07-11 凌嘉科技股份有限公司 Continuous coating system with reactive ion etching function
TWI665326B (en) * 2017-12-15 2019-07-11 友威科技股份有限公司 Continuous film coating device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI665751B (en) * 2017-11-30 2019-07-11 凌嘉科技股份有限公司 Continuous coating system with reactive ion etching function
TWI665326B (en) * 2017-12-15 2019-07-11 友威科技股份有限公司 Continuous film coating device

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