TWI663781B - Multi-frequency antenna packaging structure - Google Patents

Multi-frequency antenna packaging structure Download PDF

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TWI663781B
TWI663781B TW106145791A TW106145791A TWI663781B TW I663781 B TWI663781 B TW I663781B TW 106145791 A TW106145791 A TW 106145791A TW 106145791 A TW106145791 A TW 106145791A TW I663781 B TWI663781 B TW I663781B
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layer
metal
integrated circuit
dielectric
openings
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TW106145791A
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TW201929321A (en
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管延城
梁嘉仁
蔣靜雯
余建德
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國家中山科學研究院
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Abstract

本發明係提供一種多頻天線封裝結構,該結構係包括一第一重佈線層、一積體電路層、第二重佈線層及一天線單元層,於該第一重佈線層、一積體電路層、第二重佈線層及一天線單元層上設置有複數可相互連通之開孔,且各該開孔內填充導電材料,藉以達到各層間電性相互連接,及縮小多頻天線封裝結構之目的。 The present invention provides a multi-frequency antenna packaging structure. The structure includes a first redistribution layer, an integrated circuit layer, a second redistribution layer, and an antenna unit layer. The circuit layer, the second redistribution layer and an antenna unit layer are provided with a plurality of openings that can communicate with each other, and each of the openings is filled with a conductive material to achieve electrical interconnection between the layers and reduce the multi-frequency antenna packaging structure Purpose.

Description

多頻天線封裝結構 Multi-frequency antenna packaging structure

本發明係有關於一種天線封裝結構,更詳而言之,尤指一種多頻天線封裝結構。 The present invention relates to an antenna packaging structure, and more particularly to a multi-frequency antenna packaging structure.

天線是通信設備的重要組成部分,可以輻射射頻信號。用於將天線系統與晶片系統電連接的一種現有連接方式是引線接合,其中天線包括設置在基板上的天線和設置在晶片上的另一個天線。然而,引線接合不僅會顯著地導致射頻信號的功耗,而且由於用於獲得高品質之輸入/輸出的電極焊盤而佔用大的空間。 Antennas are an important part of communication equipment and can radiate radio frequency signals. One existing connection method for electrically connecting an antenna system to a chip system is wire bonding, where the antenna includes an antenna provided on a substrate and another antenna provided on a wafer. However, wire bonding not only causes significant power consumption of radio frequency signals, but also takes up a large space due to electrode pads used to obtain high-quality input / output.

為了減少引線接合的使用,在封裝結構中集成天線的設計已經由公開論文公開。然而,封裝結構不是將多頻天線與系統電連接的疊層封裝結構,與現有的先進製造工藝相比,封裝結構的製造工藝並不穩定,模具複合過孔不一致,並且由於翹曲的影響而發生非接觸接合。 In order to reduce the use of wire bonding, the design of an integrated antenna in a package structure has been disclosed by a public paper. However, the packaging structure is not a laminated packaging structure that electrically connects the multi-frequency antenna to the system. Compared with the existing advanced manufacturing process, the manufacturing process of the packaging structure is not stable, the mold compound vias are inconsistent, and due to the effect of warping Non-contact bonding occurred.

鑒於上述習知技術之缺點,本發明主要之目的在於提供一種縮小結構之多頻天線封裝結構。 In view of the shortcomings of the conventional techniques, the main object of the present invention is to provide a multi-frequency antenna package structure with a reduced structure.

本發明另一目的在於提供一種可同時使用不同 頻率之多頻天線封裝結構。 Another object of the present invention is to provide a method that can simultaneously use different Multi-frequency antenna package structure.

本發明再一目的在於提供一種製作多頻天線之製作方法。 Another object of the present invention is to provide a manufacturing method for manufacturing a multi-frequency antenna.

本發明又一目的在於提供一種使用多頻天線之通訊裝置。 Another object of the present invention is to provide a communication device using a multi-frequency antenna.

為達上述目的,本發明係提供一種多頻天線封裝結構,該結構係包括一第一重佈線層、一積體電路層、第二重佈線層及一天線單元層,該第一重佈線層係包括一具有複數開口的第一介電材料層,及設置於該第一介電材料層的複數開口中的複數金屬層,該積體電路層係設置於該第一重佈線層上,具有至少一金屬通孔(via)、至少一金屬柱(pillar)、一積體電路晶片和一模製(molding)層,該第二重佈線層係設置於該積體電路層上,包括一第二介電材料層和形成在該第二介電材料層的多個開口中的多個第二金屬層,該第一天線單元層係設置於該第二重佈線層上,包括一第一介電層和形成在該第一介電層的複數開口中的複數第三金屬層,其中,該金屬柱以及該積體電路晶片設置在該第一重佈線層上,該金屬柱電連接該積體電路晶片與該等第一金屬層的其中一者,該等第三金屬層中的至少一者電連接該等第二金屬層的其中一者,並且該等第三金屬層形成一第一天線單元,其中該第一天線單元為一多輸入多輸出相位天線,且該積體電路晶片層的高度相同於或小於該金屬通孔的高度,藉以達到縮小多頻天 線封裝結構之目的。 To achieve the above object, the present invention provides a multi-frequency antenna packaging structure, which includes a first redistribution layer, an integrated circuit layer, a second redistribution layer, and an antenna unit layer, the first redistribution layer The system includes a first dielectric material layer having a plurality of openings, and a plurality of metal layers disposed in the plurality of openings of the first dielectric material layer. The integrated circuit layer is disposed on the first redistribution layer and has At least one metal via, at least one metal pillar, an integrated circuit wafer, and a molding layer. The second redistribution layer is disposed on the integrated circuit layer and includes a first Two dielectric material layers and a plurality of second metal layers formed in the openings of the second dielectric material layer. The first antenna unit layer is disposed on the second redistribution layer and includes a first A dielectric layer and a plurality of third metal layers formed in the plurality of openings of the first dielectric layer, wherein the metal pillars and the integrated circuit wafer are disposed on the first redistribution layer, and the metal pillars are electrically connected to the One of the integrated circuit wafer and the first metal layer, the At least one of the third metal layers is electrically connected to one of the second metal layers, and the third metal layers form a first antenna unit, wherein the first antenna unit is a multiple input multiple Output phase antenna, and the height of the integrated circuit chip layer is the same as or less than the height of the metal through hole, so as to reduce the multi-frequency days Purpose of wire packaging structure.

100‧‧‧積體電路晶片 100‧‧‧Integrated Circuit Chip

101‧‧‧凸塊球 101‧‧‧ Bump Ball

102‧‧‧第一保護層 102‧‧‧first protective layer

103‧‧‧第一重佈線層 103‧‧‧First rewiring layer

104‧‧‧積體電路層 104‧‧‧Integrated Circuit Layer

105‧‧‧第二重佈線層 105‧‧‧ Second wiring layer

106‧‧‧第一屏蔽層 106‧‧‧First shielding layer

107‧‧‧第一天線層 107‧‧‧First antenna layer

108‧‧‧第二保護層 108‧‧‧Second protective layer

109‧‧‧第一介電材料層 109‧‧‧first dielectric material layer

110‧‧‧第一金屬層 110‧‧‧first metal layer

111‧‧‧金屬柱 111‧‧‧ metal pillar

112‧‧‧第二天線單元 112‧‧‧Second antenna unit

113‧‧‧導電墊 113‧‧‧Conductive pad

114‧‧‧積體電路 114‧‧‧Integrated Circuit

115‧‧‧半導體材料 115‧‧‧Semiconductor materials

116‧‧‧模製層 116‧‧‧moulding layer

117‧‧‧金屬通孔 117‧‧‧metal through hole

118‧‧‧第二介電材料層 118‧‧‧second dielectric material layer

119‧‧‧第二金屬層 119‧‧‧Second metal layer

120‧‧‧第二介電層 120‧‧‧Second dielectric layer

121‧‧‧第四金屬層 121‧‧‧ fourth metal layer

122‧‧‧第三金屬層 122‧‧‧ Third metal layer

123‧‧‧第一介電層 123‧‧‧first dielectric layer

第1圖係為本發明多頻天線封裝結構示意圖。 FIG. 1 is a schematic diagram of a multi-frequency antenna packaging structure of the present invention.

以下係藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容瞭解本發明之其他優點與功效。 The following is a description of specific embodiments of the present invention. Those skilled in the art can understand other advantages and effects of the present invention from the content disclosed in this specification.

請參閱第1圖,係為本發明多頻天線封裝結構示意圖,如圖所示,該結構係包括一第一重佈線(redistribution)層103、一積體電路層104、一第二重佈線層105、一第一屏蔽層106、一第一天線層107、一第一保護層102、一第二保護層108及多個凸塊球(bump balls)101,該第一重佈線層103包括一第一介電材料層109,和形成在該第一介電材料層109的複數開口中的複數第一金屬層110,該積體電路層104形成於該第一重佈線層上103,該積體電路層104包括至少一金屬通孔(via)117、至少一金屬柱(pillar)111、積體電路晶片100和模製(molding)層116,其中,該模製層116用以填充該金屬通孔117形成的複數開口,該金屬柱111以及該積體電路晶片100設置在該第一重佈線層上103,該金屬通孔117電連接各該第一金屬層110,該金屬柱111電連接該積體電路晶片100,及複數第一金屬層110, 該積體電路晶片100包括位於該積體電路晶片100之積體電路上114的第二天線單元112、及複數導電墊113。 Please refer to FIG. 1, which is a schematic diagram of a multi-frequency antenna package structure of the present invention. As shown in the figure, the structure includes a first redistribution layer 103, an integrated circuit layer 104, and a second redistribution layer. 105. A first shielding layer 106, a first antenna layer 107, a first protective layer 102, a second protective layer 108, and a plurality of bump balls 101. The first redistribution layer 103 includes A first dielectric material layer 109 and a plurality of first metal layers 110 formed in a plurality of openings of the first dielectric material layer 109. The integrated circuit layer 104 is formed on the first redistribution layer 103. The integrated circuit layer 104 includes at least one metal via 117, at least one metal pillar 111, an integrated circuit wafer 100, and a molding layer 116, wherein the molding layer 116 is used to fill the A plurality of openings formed by metal vias 117, the metal pillars 111 and the integrated circuit wafer 100 are disposed on the first redistribution layer 103, the metal vias 117 are electrically connected to the first metal layers 110, and the metal pillars 111 Electrically connect the integrated circuit chip 100 and the plurality of first metal layers 110, The integrated circuit chip 100 includes a second antenna unit 112 and a plurality of conductive pads 113 on the integrated circuit 114 of the integrated circuit chip 100.

該第二重佈線層105形成於該積體電路層104上,該第二重佈線層105包括一第二介電材料層118,及形成在該第二介電材料層118的各該開口中的第二金屬層119,其中,該金屬通孔117電性連接複數第二金屬層119,該第一屏蔽層106設置於該第一天線單元層107,及該第二重佈線層105之間,該第一屏蔽層106包括一第一介電層120,及形成於該第二介質層120的複數開口中的複數第四金屬層121,其中,各該第四金屬層121電連接該第一天線單元層107的複數第三金屬層122,及部分的第二金屬層119。 The second redistribution layer 105 is formed on the integrated circuit layer 104. The second redistribution layer 105 includes a second dielectric material layer 118 and is formed in each of the openings of the second dielectric material layer 118. The second metal layer 119 is electrically connected to the second metal layer 119. The first shielding layer 106 is disposed on the first antenna unit layer 107 and the second redistribution layer 105. Meanwhile, the first shielding layer 106 includes a first dielectric layer 120 and a plurality of fourth metal layers 121 formed in a plurality of openings of the second dielectric layer 120, wherein each of the fourth metal layers 121 is electrically connected to the The plurality of third metal layers 122 of the first antenna element layer 107 and a portion of the second metal layer 119.

上述之實施例僅為例示性說明本發明之特點及其功效,而非用於限制本發明之實質技術內容的範圍。任何熟習此技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修飾與變化。因此,本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-mentioned embodiments are merely illustrative for describing the features and effects of the present invention, and are not intended to limit the scope of the essential technical content of the present invention. Anyone skilled in the art can modify and change the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.

Claims (15)

一種多頻天線封裝結構,該結構係包括:一第一重佈線層,係包括一具有複數開口的第一介電材料層,及設置於該第一介電材料層的複數開口中的複數第一金屬層;一積體電路層,係設置於該第一重佈線層上,該積體電路層包括至少一金屬通孔(via)、至少一金屬柱(pillar)、一積體電路晶片和一模製(molding)層,其中該模製層用以填充於該金屬通孔形成的複數開口內,該金屬柱以及該積體電路晶片設置在該第一重佈線層上,該金屬通孔電連接該等第一金屬層的其中一者,該金屬柱電連接該積體電路晶片與該等第一金屬層的其中一者;一第二重佈線層,形成在該積體電路層上,該第二重佈線層包括一第二介電材料層和形成在該第二介電材料層的多個開口中的多個第二金屬層,其中該金屬通孔電連接該等第二金屬層中的其中一者;以及一第一天線單元層,包括一第一介電層和形成在該第一介電層的複數開口中的複數第三金屬層,其中該等第三金屬層中的至少一者電連接該等第二金屬層的其中一者,並且該等第三金屬層形成一第一天線單元,其中該第一天線單元為一多輸入多輸出相位天線,且該積體電路晶片的高度相同於或小於該金屬通孔的高度。A multi-frequency antenna package structure includes a first redistribution layer including a first dielectric material layer having a plurality of openings, and a plurality of first dielectric layers disposed in the plurality of openings of the first dielectric material layer. A metal layer; an integrated circuit layer disposed on the first redistribution layer, the integrated circuit layer including at least one metal via, at least one metal pillar, an integrated circuit wafer, and A molding layer, wherein the molding layer is used to fill a plurality of openings formed by the metal vias, the metal pillars and the integrated circuit wafer are disposed on the first redistribution layer, and the metal vias One of the first metal layers is electrically connected, the metal pillar is electrically connected to one of the integrated circuit wafer and one of the first metal layers; a second redistribution layer is formed on the integrated circuit layer The second redistribution layer includes a second dielectric material layer and a plurality of second metal layers formed in the openings of the second dielectric material layer. The metal vias are electrically connected to the second metals. One of the layers; and a first antenna element layer, the package Including a first dielectric layer and a plurality of third metal layers formed in the plurality of openings of the first dielectric layer, wherein at least one of the third metal layers is electrically connected to one of the second metal layers Moreover, the third metal layers form a first antenna unit, wherein the first antenna unit is a multiple-input multiple-output phase antenna, and the height of the integrated circuit chip is the same as or smaller than that of the metal through-hole. height. 如申請專利範圍第1項所述之多頻天線封裝結構,其中,該積體電路晶片係包括位於該積體電路晶片之一積體電路上的一第二天線單元。The multi-frequency antenna package structure described in item 1 of the patent application scope, wherein the integrated circuit chip includes a second antenna unit located on an integrated circuit of the integrated circuit chip. 如申請專利範圍第1項所述之多頻天線封裝結構,更包括:一第一屏蔽層,形成於該第一天線單元層與該第二重佈線層之間,該第一屏蔽層包括形一第一介電層與成於該第二介質層的多個開口中的多個第四金屬層,其中該等第四金屬層電連接該等第三金屬層與部分的該等第二金屬層。The multi-frequency antenna package structure described in item 1 of the patent application scope further includes a first shielding layer formed between the first antenna unit layer and the second redistribution layer. The first shielding layer includes A first dielectric layer and a plurality of fourth metal layers formed in the openings of the second dielectric layer, wherein the fourth metal layers are electrically connected to the third metal layer and a part of the second metal layer; Metal layer. 如申請專利範圍第3項所述之多頻天線封裝結構,更包括:一第一保護層,其中該第一重佈線層設置於該第一保護層上;一第二保護層,形成在該第一天線單元層上;以及多個凸塊球(bump balls),其中該多頻天線封裝結構透過過該等凸塊球安裝在一基板上。The multi-frequency antenna package structure described in item 3 of the patent application scope further includes: a first protective layer, wherein the first redistribution layer is disposed on the first protective layer; and a second protective layer is formed on the first protective layer. The first antenna unit layer; and a plurality of bump balls, wherein the multi-frequency antenna package structure is mounted on a substrate through the bump balls. 如申請專利範圍第1項所述之多頻天線封裝結構,更包括:一第二天線單元層,包括一第二介電層和形成在該第二介電層的多個開口中的多個第四金屬層,其中該等第四金屬層中的至少一者電連接到該等第一金屬層中的其中一者,該等第四金屬層形成該第二天線單元,且該第一重佈線層形成在該第二天線單元層上。The multi-frequency antenna package structure described in item 1 of the patent application scope further includes a second antenna unit layer including a second dielectric layer and a plurality of openings formed in the plurality of openings of the second dielectric layer. A fourth metal layer, wherein at least one of the fourth metal layers is electrically connected to one of the first metal layers, the fourth metal layer forms the second antenna unit, and the first A double wiring layer is formed on the second antenna element layer. 如申請專利範圍第5項所述之多頻天線封裝結構,更包括:一第一屏蔽層,形成於該第一天線單元層與該第二重佈線層之間,該第一屏蔽層包括一第三介電層與形成於該第三介電層的多個開口中的多個第五金屬層,其中該等第五金屬層電連接該等第三金屬層與部分的該等第二金屬層;以及一第二屏蔽層,形成於該第二天線單元層與該第一重佈線層之間,該第二屏蔽層包括一第四介電層與形成於該第四介質層的多個開口中的多個第六金屬層,該等第六金屬層電連接該等第四金屬層與部分的該等第一金屬層。The multi-frequency antenna package structure described in item 5 of the patent application scope further includes: a first shielding layer formed between the first antenna unit layer and the second redistribution layer, the first shielding layer including A third dielectric layer and a plurality of fifth metal layers formed in the openings of the third dielectric layer, wherein the fifth metal layer is electrically connected to the third metal layer and a part of the second metal layer. A metal layer; and a second shielding layer formed between the second antenna unit layer and the first redistribution layer, the second shielding layer including a fourth dielectric layer and a fourth dielectric layer The sixth metal layers in the openings are electrically connected to the fourth metal layer and a part of the first metal layer. 如申請專利範圍第6項所述之多頻天線封裝結構,更包括:一第一保護層,其中該第一重佈線層位於該第一保護層上;一第二保護層,形成在該第一天線單元層上;以及多個凸塊球,其中該多頻天線封裝結構透過該等凸塊球安裝在一基板上。The multi-frequency antenna package structure described in item 6 of the patent application scope further includes: a first protective layer, wherein the first redistribution layer is located on the first protective layer; and a second protective layer is formed on the first protective layer. An antenna unit layer; and a plurality of bump balls, wherein the multi-frequency antenna package structure is mounted on a substrate through the bump balls. 如申請專利範圍第5項所述之多頻天線封裝結構,其中,該第二天線單元為一多輸入多輸出相位天線。The multi-frequency antenna package structure described in item 5 of the patent application scope, wherein the second antenna unit is a multiple-input multiple-output phase antenna. 一種多頻天線封裝結構的製造方法,係包括:提供具有一第一膠層的一第一臨時基板;在該第一膠層上形成一第一介電材料層,以及在該第一介電材料層的多個開口中形成多個第一金屬圖案;在該等第一金屬圖案的其中一者上形成至少一金屬通孔;在部分的該等第一金屬圖案的上形成至少一金屬柱,以及在該金屬柱上設置一積體電路晶片;形成一模製層以覆蓋該金屬柱、該金屬通孔與該積體電路晶片;薄化(thinning down)該模製層以暴露該金屬通孔,以形成包括該模製層、該金屬通孔、該金屬柱和該積體電路晶片的一積體電路晶片層;在該積體電路晶片層上形成一第一重佈線層,其中該第一重佈線層包括一第二介電材料層和多個第二金屬圖案,其中該等第二圖案形成在該第二介電材料層的多個開口中;在該第一重佈線層上形成一第一天線單元層,其中該第一天線單元層包括一第一介電層和形成在該第一介電層的多個開口中的多個第三金屬圖案,其中該等第三金屬圖案中的至少一個電連接該該等第二金屬圖案的其中一者,且該等第三金屬圖案形成一第一天線單元;在該第一天線單元層上形成一第一保護層,以形成一第一堆疊結構;移除具有該第一膠層的該第一臨時基板,並且翻轉該第一堆疊結構以將該第一堆疊結構粘附到具有一第二膠層的一第二臨時基板上;通過處理該第一介電材料層和該等第一金屬圖案來形成一第二重佈線層,其中該第二重佈線層包括經處理的該第一介電材料層和經處理的該等第一金屬圖案;在該第二重佈線層上形成一第二保護層;在該第二保護層上形成多個凸塊球,從而形成一第二堆疊結構;以及移除具有該第二膠層的該第二臨時基板,翻轉該第二堆疊結構,以通過該等凸塊球將該第二堆疊結構安裝在一基板上;其中該第一天線單元為一多輸入多輸出相位天線,且該積體電路晶片的高度相同於或小於該金屬通孔的高度。A method for manufacturing a multi-frequency antenna package structure includes: providing a first temporary substrate having a first adhesive layer; forming a first dielectric material layer on the first adhesive layer; and forming a first dielectric layer on the first dielectric layer. A plurality of first metal patterns are formed in the plurality of openings of the material layer; at least one metal through-hole is formed on one of the first metal patterns; at least one metal pillar is formed on part of the first metal patterns. And forming an integrated circuit wafer on the metal pillar; forming a molding layer to cover the metal pillar, the metal through-hole and the integrated circuit wafer; thinning the molding layer to expose the metal A through hole to form an integrated circuit wafer layer including the molding layer, the metal through hole, the metal pillar, and the integrated circuit wafer; and forming a first redistribution wiring layer on the integrated circuit wafer layer, wherein The first redistribution layer includes a second dielectric material layer and a plurality of second metal patterns, wherein the second patterns are formed in the openings of the second dielectric material layer; in the first redistribution layer A first antenna element layer is formed thereon, wherein The first antenna unit layer includes a first dielectric layer and a plurality of third metal patterns formed in the openings of the first dielectric layer, wherein at least one of the third metal patterns is electrically connected to the Waiting for one of the second metal patterns, and the third metal patterns forming a first antenna unit; forming a first protective layer on the first antenna unit layer to form a first stacked structure; Remove the first temporary substrate with the first adhesive layer, and flip the first stacked structure to adhere the first stacked structure to a second temporary substrate with a second adhesive layer; by processing the first A dielectric material layer and the first metal patterns to form a second redistribution layer, wherein the second redistribution layer includes the processed first dielectric material layer and the processed first metal patterns; Forming a second protective layer on the second redistribution layer; forming a plurality of bump balls on the second protective layer to form a second stacked structure; and removing the second temporary layer having the second adhesive layer Substrate, flip the second stacked structure to pass The ball block of the second stack structure is mounted on a substrate; wherein the first antenna unit is a multiple input multiple output phase of the antenna, and a height of the integrated circuit chip is the same as or less than the height of the metal via. 如請求項第9項所述之多頻天線封裝結構的製造方法,其中該積體電路晶片包括位於該積體電路晶片之一積體電路上的一第二天線單元。The method of manufacturing a multi-frequency antenna package structure according to claim 9, wherein the integrated circuit chip includes a second antenna unit located on an integrated circuit of the integrated circuit chip. 如請求項第10項所述之多頻天線封裝結構的製造方法,更包括:在形成該第一天線單元層之前,在該第一重佈線層上形成一第一屏蔽層,該第一屏蔽層包括一第二介質層和形成於該第二介質層的多個開口中的多個第四金屬圖案,該等第四金屬圖案電性連接該等第三金屬圖案和部分的該等第二金屬圖案。The method for manufacturing a multi-frequency antenna package structure according to claim 10, further comprising: before forming the first antenna element layer, forming a first shielding layer on the first redistribution layer, the first shielding layer The shielding layer includes a second dielectric layer and a plurality of fourth metal patterns formed in the openings of the second dielectric layer. The fourth metal patterns are electrically connected to the third metal pattern and a portion of the first metal pattern. Two metal patterns. 如請求項第9項所述之多頻天線封裝結構的製造方法,更包括:在形成該第二保護層之前,在該第二重佈線層上形成一第二天線單元層,其中該第二天線單元層包括一第二介質層和形成在該第二介質層的多個開口中的多個第四金屬圖案,其中該等第四金屬圖案電連接該等第一金屬圖案的其中一者,且該等第四金屬圖案形成一第二天線單元。The method for manufacturing a multi-frequency antenna package structure according to claim 9, further comprising: before forming the second protective layer, forming a second antenna unit layer on the second redistribution layer, wherein the first The two antenna unit layers include a second dielectric layer and a plurality of fourth metal patterns formed in the openings of the second dielectric layer, wherein the fourth metal patterns are electrically connected to one of the first metal patterns. Or, the fourth metal patterns form a second antenna unit. 如請求項第12項所述之多頻天線封裝結構的製造方法,更包括:在形成該第一天線單元層之前,在該第一重佈線層上形成一第一屏蔽層,該第一屏蔽層包括一第三介質層和形成於該第三介質層的多個開口中的多個第五金屬圖案,該等第五金屬圖案電性連接該等第三金屬圖案和部分的該等第二金屬圖案的;以及在該第二天線單元層形成之前,在該第二重佈線層上形成一第二屏蔽層,該第二屏蔽層包括一第四介質層和形成於該第四介質層的多個開口中的多個第六金屬圖案,該等第六金屬圖案電性連接該等第四金屬圖案和部分的該等第一金屬圖案。The method for manufacturing a multi-frequency antenna package structure according to claim 12, further comprising: before forming the first antenna element layer, forming a first shielding layer on the first redistribution layer, the first shielding layer The shielding layer includes a third dielectric layer and a plurality of fifth metal patterns formed in the plurality of openings of the third dielectric layer. The fifth metal patterns are electrically connected to the third metal patterns and portions of the first metal patterns. Two metal patterns; and before the second antenna unit layer is formed, a second shielding layer is formed on the second redistribution layer, the second shielding layer includes a fourth dielectric layer and is formed on the fourth dielectric The sixth metal patterns in the openings of the layer are electrically connected to the fourth metal pattern and a part of the first metal pattern. 一種通訊裝置,包括:一多頻天線封裝結構,包括:一第一重佈線層,包括一第一介電材料層和形成在該第一介電材料層的多個開口中的多個第一金屬圖案;一積體電路層,形成於該第一重佈線層上,該積體電路層包括至少一金屬通孔、至少一金屬柱、一積體電路晶片和一模製層,其中該模製層用以填充該金屬通孔形成的多個開口,該金屬柱以及該積體電路晶片設置在該第一重佈線層上,該金屬通孔電連接該等第一金屬圖案的其中一者,該金屬柱電連接該積體電路芯片與該等第一金屬圖案的其中一者;一第二重佈線層,形成在該積體電路層上,該第二重佈線層包括一第二介電材料層和形成在該第二介電材料層的多個開口中的多個第二金屬圖案,其中該金屬通孔電連接該等第二金屬圖案中的其中一者;以及一第一天線單元層,包括一第一介電層和形成在該第一介電層的多個開口中的多個第三金屬圖案,其中該等第三金屬圖案中的至少一者電連接該等第二金屬圖案的其中一者,並且該等第三金屬圖案形成一第一天線單元;其中該積體電路晶片具有作為一處理電路的一積體電路,且該積體電路晶片具有位於該積體電路上的一第二天線單元,或者該該積體電路晶片不包括有該第二天線單元,但該多頻天線封裝結構更包括:一第二天線單元層,包括一第二介電層和形成在該第二介電層的多個開口中的多個第四金屬圖案,其中該等第四金屬圖案中的至少一者電連接到該等第一金屬圖案中的其中一者,該等第四金屬圖案形成該第二天線單元,且該第一重佈線層形成在該第二天線單元層上;其中該第一天線單元為一多輸入多輸出相位天線,且該積體電路晶片的高度相同於或小於該金屬通孔的高度。A communication device includes a multi-frequency antenna package structure including a first redistribution layer including a first dielectric material layer and a plurality of first ones formed in a plurality of openings of the first dielectric material layer. A metal pattern; an integrated circuit layer formed on the first redistribution layer, the integrated circuit layer including at least one metal via, at least one metal pillar, an integrated circuit wafer, and a molding layer, wherein the mold A layer is formed to fill the openings formed by the metal vias. The metal pillars and the integrated circuit wafer are disposed on the first redistribution layer. The metal vias are electrically connected to one of the first metal patterns. The metal pillar is electrically connected to the integrated circuit chip and one of the first metal patterns; a second redistribution layer is formed on the integrated circuit layer, and the second redistribution layer includes a second dielectric An electrical material layer and a plurality of second metal patterns formed in the openings of the second dielectric material layer, wherein the metal vias are electrically connected to one of the second metal patterns; and a first day A line unit layer including a first dielectric layer and a A plurality of third metal patterns in the openings of the first dielectric layer, wherein at least one of the third metal patterns is electrically connected to one of the second metal patterns, and the third The metal pattern forms a first antenna unit; wherein the integrated circuit chip has an integrated circuit as a processing circuit, and the integrated circuit chip has a second antenna unit located on the integrated circuit, or The integrated circuit chip does not include the second antenna unit, but the multi-frequency antenna package structure further includes a second antenna unit layer including a second dielectric layer and a second dielectric layer formed on the second dielectric layer. A plurality of fourth metal patterns in the plurality of openings, wherein at least one of the fourth metal patterns is electrically connected to one of the first metal patterns, and the fourth metal patterns form the second day Line unit, and the first rewiring layer is formed on the second antenna unit layer; wherein the first antenna unit is a multiple-input multiple-output phase antenna, and the height of the integrated circuit chip is the same as or less than the height of the integrated circuit chip The height of the metal via. 如請求項第14項所述之通訊裝置,其中該通訊裝置係為一加密通訊裝置或一頻率轉換裝置。The communication device according to claim 14, wherein the communication device is an encrypted communication device or a frequency conversion device.
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