TWI654728B - Multi-frequency antenna package structure manufacturing method and communication device thereof - Google Patents
Multi-frequency antenna package structure manufacturing method and communication device thereofInfo
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Abstract
本發明係提供一種多頻天線封裝結構製作方法,透過該種設置方法,形成具有第一重佈線層、積體電路層、第二重佈線層及一天線單元層,並於該第一重佈線層、一積體電路層、第二重佈線層及一天線單元層上,形成有複數可相互連通之開孔,且各該開孔內填充導電材料,藉以達到各層間電性相互連接,及縮小多頻天線封裝結構之目的。 The present invention provides a method for fabricating a multi-frequency antenna package structure, by which a first redistribution layer, an integrated circuit layer, a second redistribution layer, and an antenna unit layer are formed, and the first rewiring is formed The layer, the integrated circuit layer, the second redistribution layer and the antenna unit layer are formed with a plurality of openings that can communicate with each other, and each of the openings is filled with a conductive material, thereby electrically connecting the layers, and Reduce the purpose of multi-frequency antenna package structure.
Description
本發明係有關於一種天線封裝結構製作方法,更詳而言之,尤指一種多頻天線封裝結構製作方法及其使用多頻天線封裝結構之通訊裝置。 The present invention relates to a method for fabricating an antenna package structure, and more particularly to a method for fabricating a multi-frequency antenna package structure and a communication device using the multi-frequency antenna package structure.
天線是通信設備的重要組成部分,可以輻射射頻信號。用於將天線系統與晶片系統電連接的一種現有連接方式是引線接合,其中天線包括設置在基板上的天線和設置在晶片上的另一個天線。然而,引線接合不僅會顯著地導致射頻信號的功耗,而且由於用於獲得高品質之輸入/輸出的電極焊盤而佔用大的空間。 The antenna is an important part of the communication device and can radiate radio frequency signals. One prior connection method for electrically connecting an antenna system to a wafer system is wire bonding, wherein the antenna includes an antenna disposed on the substrate and another antenna disposed on the wafer. However, wire bonding not only significantly causes power consumption of the radio frequency signal, but also occupies a large space due to electrode pads for obtaining high quality input/output.
為了減少引線接合的使用,在封裝結構中集成天線的設計已經由公開論文公開。然而,封裝結構不是將多頻天線與系統電連接的疊層封裝結構,與現有的先進製造工藝相比,封裝結構的製造工藝並不穩定,模具複合過孔不一致,並且由於翹曲的影響而發生非接觸接合。 In order to reduce the use of wire bonding, the design of an integrated antenna in a package structure has been disclosed by a public paper. However, the package structure is not a stacked package structure that electrically connects the multi-frequency antenna to the system. Compared with the existing advanced manufacturing process, the manufacturing process of the package structure is not stable, the mold composite vias are inconsistent, and due to the influence of warpage A non-contact joint occurs.
鑒於上述習知技術之缺點,本發明主要之目的在於提供一種縮小結構之多頻天線封裝結構之製作方法。 In view of the above disadvantages of the prior art, the main object of the present invention is to provide a method for fabricating a multi-frequency antenna package structure with reduced structure.
本發明另一目的在於提供一種製作可同時使用不同頻率多頻天線封裝結構之製作方法。 Another object of the present invention is to provide a method of fabricating a multi-frequency antenna package structure that can simultaneously use different frequencies.
本發明再一目的在於提供一種使用多頻天線之通訊裝置。 It is still another object of the present invention to provide a communication device using a multi-frequency antenna.
為達上述目的,本發明係提供一種多頻天線封裝結構製作方法,該方法步驟包括:步驟1(S1):提供具有一第一膠層的一第一臨時基板,在該第一膠層上形成一第一介電材料層,以及在該第一介電材料層的多個開口中形成多個第一金屬層;步驟2(S2):在該等第一金屬層的其中一者上形成至少一金屬通孔;在部分的該等第一金屬層的上形成至少一金屬柱,以及在該金屬柱上設置一積體電路晶片;步驟3(S3):形成一模製層以覆蓋該金屬柱、該金屬通孔與該積體電路晶片;步驟4(S4):在該積體電路晶片層上形成一第一重佈線(redistribution)層;步驟5(S5):在該第一重佈線層上形成一第一天線單元層;步驟6(S6):在該第一天線單元層上形成一第一保護層,以形成一第一堆疊結構;步驟7(S7):移除具有該第一膠層的該第一臨時基板,並且翻轉該第一堆疊結構以將該第一堆疊結構粘附到具有一第二膠層的一第二臨時基板上; 步驟8(S8):通過處理該等第一金屬層來形成一第二重佈線層;步驟9(S9):在該第二重佈線層上形成一第二保護層,並於該第二保護層上形成多個凸塊球,形成一第二堆疊結構;以及步驟10(S10):移除具有該第二膠層的該第二臨時基板,翻轉該第二堆疊結構,以通過該等凸塊球將該第二堆疊結構安裝在一基板上,透過該種設置方式俾使該積體電路晶片層的高度相同,或小於該金屬通孔的高度,藉以達到縮小多頻天線封裝結構之目的。 To achieve the above objective, the present invention provides a method for fabricating a multi-frequency antenna package structure, the method comprising the following steps: Step 1 (S1): providing a first temporary substrate having a first adhesive layer on the first adhesive layer Forming a first dielectric material layer, and forming a plurality of first metal layers in the plurality of openings of the first dielectric material layer; and step 2 (S2): forming on one of the first metal layers At least one metal via hole; at least one metal pillar is formed on a portion of the first metal layers, and an integrated circuit wafer is disposed on the metal pillar; and step 3 (S3): forming a mold layer to cover the a metal pillar, the metal via and the integrated circuit wafer; step 4 (S4): forming a first redistribution layer on the integrated circuit wafer layer; and step 5 (S5): at the first weight Forming a first antenna unit layer on the wiring layer; Step 6 (S6): forming a first protective layer on the first antenna unit layer to form a first stacked structure; Step 7 (S7): removing The first temporary substrate having the first adhesive layer, and flipping the first stacked structure to the first The laminated structure is adhered to a second temporary substrate having a second subbing layer; Step 8 (S8): forming a second redistribution layer by processing the first metal layers; Step 9 (S9): forming a second protective layer on the second redistribution layer, and applying the second protection layer Forming a plurality of bump balls on the layer to form a second stack structure; and step 10 (S10): removing the second temporary substrate having the second glue layer, and flipping the second stack structure to pass the convex The block ball mounts the second stack structure on a substrate, and the height of the integrated circuit chip layer is the same or smaller than the height of the metal through hole by the arrangement, thereby achieving the purpose of reducing the multi-frequency antenna package structure. .
100‧‧‧積體電路晶片 100‧‧‧Integrated circuit chip
101‧‧‧凸塊球 101‧‧‧Bump ball
102‧‧‧第一保護層 102‧‧‧First protective layer
103‧‧‧第一重佈線層 103‧‧‧First redistribution layer
104‧‧‧積體電路層 104‧‧‧Integrated circuit layer
105‧‧‧第二重佈線層 105‧‧‧Second redistribution layer
106‧‧‧第一屏蔽層 106‧‧‧First shield
107‧‧‧第一天線層 107‧‧‧First antenna layer
108‧‧‧第二保護層 108‧‧‧Second protective layer
109‧‧‧第一介電材料層 109‧‧‧First dielectric material layer
110‧‧‧第一金屬層 110‧‧‧First metal layer
111‧‧‧金屬柱 111‧‧‧Metal column
112‧‧‧第二天線單元 112‧‧‧Second antenna unit
113‧‧‧導電墊 113‧‧‧Electrical mat
114‧‧‧積體電路 114‧‧‧ integrated circuit
115‧‧‧半導體材料 115‧‧‧Semiconductor materials
116‧‧‧模製層 116‧‧‧Molded layer
117‧‧‧金屬通孔 117‧‧‧Metal through hole
118‧‧‧第二介電材料層 118‧‧‧Second dielectric material layer
119‧‧‧第二金屬層 119‧‧‧Second metal layer
120‧‧‧第二介電層 120‧‧‧Second dielectric layer
121‧‧‧第四金屬層 121‧‧‧Fourth metal layer
122‧‧‧第三金屬層 122‧‧‧ Third metal layer
123‧‧‧第一介電層 123‧‧‧First dielectric layer
S1~S11‧‧‧步驟流程 S1~S11‧‧‧Step process
第1圖係為本發明多頻天線封裝結構製造方法步驟流程示意圖。 FIG. 1 is a schematic flow chart showing the steps of a method for manufacturing a multi-frequency antenna package structure according to the present invention.
第2圖係為本發明通訊裝置示意圖。 Figure 2 is a schematic diagram of the communication device of the present invention.
以下係藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容瞭解本發明之其他優點與功效。 The embodiments of the present invention are described by way of specific examples, and those skilled in the art can understand the other advantages and advantages of the present invention from the disclosure of the present disclosure.
請參閱第1圖,係為本發明多頻天線封裝結構製造方法步驟流程示意圖,如圖所示,該步驟係包括:步驟1(S1):提供具有一第一膠層的一第一臨時基板,在該第一 膠層上形成一第一介電材料層,以及在該第一介電材料層的多個開口中形成多個第一金屬層;步驟2(S2):在該等第一金屬層的其中一者上形成至少一金屬通孔;在部分的該等第一金屬層的上形成至少一金屬柱,以及在該金屬柱上設置一積體電路晶片;步驟3(S3):形成一模製層以覆蓋該金屬柱、該金屬通孔與該積體電路晶片,薄化(thinning down)該模製層以暴露該金屬通孔,以形成包括該模製層、該金屬通孔、該金屬柱和該積體電路晶片形成的積體電路晶片層,其中,該積體電路晶片層包括位於該積體電路晶片之一積體電路上的一第二天線單元;步驟4(S4):在該積體電路晶片層上形成一第一重佈線(redistribution)層;步驟5(S5):在該第一重佈線層上形成一第一天線單元層,其中,在形成該第一天線單元層之前,在該第一重佈線層上形成一第一屏蔽層,該第一屏蔽層包括一第二介質層和形成於該第二介質層的多個開口中的多個第四金屬層,該等第四金屬層電性連接該等第三金屬層和部分的該等第二金屬層;步驟6(S6):在該第一天線單元層上形成一第一保護層,以形成一第一堆疊結構;步驟7(S7):移除具有該第一膠層的該第一臨時基板,並且翻轉 該第一堆疊結構以將該第一堆疊結構粘附到具有一第二膠層的一第二臨時基板上;步驟8(S8):通過處理該第一介電材料層和該等第一金屬層來形成一第二重佈線層,其中該第二重佈線層包括經處理的該第一介電材料層和經處理的該等第一金屬層,其中,在該第二天線單元層形成之前,在該第二重佈線層上形成一第二屏蔽層,該第二屏蔽層包括一第四介質層和形成於該第四介質層的多個開口中的多個第六金屬層,該等第六金屬層電性連接該等第四金屬層和部分的該等第一金屬層;步驟9(S9):在該第二重佈線層上形成一第二保護層,並於該第二保護層上形成多個凸塊球,形成一第二堆疊結構;以及步驟10(S10):移除具有該第二膠層的該第二臨時基板,翻轉該第二堆疊結構,以通過該等凸塊球將該第二堆疊結構安裝在一基板上。 1 is a schematic flow chart of a method for manufacturing a multi-frequency antenna package structure according to the present invention. As shown in the figure, the method includes: Step 1 (S1): providing a first temporary substrate having a first adhesive layer In the first Forming a first dielectric material layer on the adhesive layer, and forming a plurality of first metal layers in the plurality of openings of the first dielectric material layer; Step 2 (S2): one of the first metal layers Forming at least one metal via hole; forming at least one metal pillar on a portion of the first metal layers, and providing an integrated circuit wafer on the metal pillar; and step 3 (S3): forming a mold layer Covering the metal post, the metal via, and the integrated circuit wafer, thinning the molding layer to expose the metal via to form the mold layer, the metal via, and the metal pillar And an integrated circuit wafer layer formed on the integrated circuit wafer, wherein the integrated circuit wafer layer comprises a second antenna unit on an integrated circuit of the integrated circuit wafer; step 4 (S4): Forming a first redistribution layer on the integrated circuit wafer layer; step 5 (S5): forming a first antenna element layer on the first redistribution layer, wherein the first antenna is formed Forming a first shielding layer on the first redistribution layer before the unit layer, the first screen The layer includes a second dielectric layer and a plurality of fourth metal layers formed in the plurality of openings of the second dielectric layer, the fourth metal layers electrically connecting the third metal layers and the second portions a metal layer; step 6 (S6): forming a first protective layer on the first antenna unit layer to form a first stacked structure; and step 7 (S7): removing the first layer having the first adhesive layer a temporary substrate and flip The first stack structure adheres the first stack structure to a second temporary substrate having a second adhesive layer; Step 8 (S8): treating the first dielectric material layer and the first metal Forming a second redistribution layer, wherein the second redistribution layer comprises the processed first dielectric material layer and the processed first metal layer, wherein the second antenna unit layer is formed Forming a second shielding layer on the second redistribution layer, the second shielding layer includes a fourth dielectric layer and a plurality of sixth metal layers formed in the plurality of openings of the fourth dielectric layer, The sixth metal layer is electrically connected to the fourth metal layer and a portion of the first metal layer; Step 9 (S9): forming a second protective layer on the second redistribution layer, and in the second Forming a plurality of bump balls on the protective layer to form a second stack structure; and step 10 (S10): removing the second temporary substrate having the second adhesive layer, and flipping the second stacked structure to pass the The bump balls mount the second stack structure on a substrate.
請參閱第2圖,係為本發明通訊裝置示意圖,如圖所示,該通訊裝置係括一多頻天線封裝結構,該結構係包括一第一重佈線(redistribution)層103、一積體電路層104、一第二重佈線層105、一第一屏蔽層106、一第一天線層107、一第一保護層102、一第二保護層108及多個凸塊球(bump balls)101,該第一重佈線層103包括一第一介電材料層109,和形成在該第一介電材料層109的複數開口中的複數第一金屬層110,該積體電路層104形成於該第一重佈線層上103,該積體電路層104包括 至少一金屬通孔(via)117、至少一金屬柱(pillar)111、積體電路晶片100和模製(molding)層116,其中,該模製層116用以填充該金屬通孔117形成的複數開口,該金屬柱111以及該積體電路晶片100設置在該第一重佈線層上103,該金屬通孔117電連接各該第一金屬層110,該金屬柱111電連接該積體電路晶片100,及複數第一金屬層110,該積體電路晶片100包括位於該積體電路晶片100之積體電路上114的第二天線單元112、及複數導電墊113。 2 is a schematic diagram of a communication device according to the present invention. As shown in the figure, the communication device includes a multi-frequency antenna package structure including a first redistribution layer 103 and an integrated circuit. The layer 104, a second redistribution layer 105, a first shielding layer 106, a first antenna layer 107, a first protective layer 102, a second protective layer 108, and a plurality of bump balls 101 The first redistribution layer 103 includes a first dielectric material layer 109, and a plurality of first metal layers 110 formed in the plurality of openings of the first dielectric material layer 109. The integrated circuit layer 104 is formed thereon. On the first redistribution layer 103, the integrated circuit layer 104 includes At least one metal via 117, at least one metal pillar 111, an integrated circuit wafer 100, and a molding layer 116, wherein the molding layer 116 is formed to fill the metal via 117 a plurality of openings, the metal post 111 and the integrated circuit wafer 100 are disposed on the first redistribution layer 103. The metal vias 117 are electrically connected to the first metal layers 110, and the metal pillars 111 are electrically connected to the integrated circuit. The wafer 100 and the plurality of first metal layers 110 include a second antenna unit 112 on the integrated circuit 114 of the integrated circuit wafer 100, and a plurality of conductive pads 113.
該第二重佈線層105形成於該積體電路層104上,該第二重佈線層105包括一第二介電材料層118,及形成在該第二介電材料層118的各該開口中的第二金屬層119,其中,該金屬通孔117電性連接複數第二金屬層119,該第一屏蔽層106設置於該第一天線單元層107,及該第二重佈線層105之間,該第一屏蔽層106包括一第一介電層120,及形成於該第二介質層120的複數開口中的複數第四金屬層121,其中,各該第四金屬層121電連接該第一天線單元層107的複數第三金屬層122,及部分的第二金屬層119,其中該第一天線單元為一多輸入多輸出相位天線,且該積體電路晶片層的高度相同於或小於該金屬通孔的高度,其中,該通訊裝置係為一加密通訊裝置或一頻率轉換裝置。 The second redistribution layer 105 is formed on the integrated circuit layer 104. The second redistribution layer 105 includes a second dielectric material layer 118 and is formed in each of the openings of the second dielectric material layer 118. a second metal layer 119, wherein the metal via 117 is electrically connected to the plurality of second metal layers 119, the first shielding layer 106 is disposed on the first antenna unit layer 107, and the second redistribution layer 105 The first shielding layer 106 includes a first dielectric layer 120 and a plurality of fourth metal layers 121 formed in the plurality of openings of the second dielectric layer 120. The fourth metal layer 121 is electrically connected to the first metal layer 121. a plurality of third metal layers 122 of the first antenna unit layer 107, and a portion of the second metal layer 119, wherein the first antenna unit is a multiple input multiple output phase antenna, and the height of the integrated circuit wafer layer is the same At or below the height of the metal through hole, wherein the communication device is an encrypted communication device or a frequency conversion device.
上述之實施例僅為例示性說明本發明之特點及其功效,而非用於限制本發明之實質技術內容的範圍。任何熟 習此技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修飾與變化。因此,本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-described embodiments are merely illustrative of the features and functions of the present invention, and are not intended to limit the scope of the technical scope of the present invention. Any cooked Modifications and variations of the above-described embodiments can be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the scope of the claims described below.
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