TWI661026B - Thermally conductive adhesive sheet, manufacturing method thereof, and electronic device using the same - Google Patents

Thermally conductive adhesive sheet, manufacturing method thereof, and electronic device using the same Download PDF

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TWI661026B
TWI661026B TW104127182A TW104127182A TWI661026B TW I661026 B TWI661026 B TW I661026B TW 104127182 A TW104127182 A TW 104127182A TW 104127182 A TW104127182 A TW 104127182A TW I661026 B TWI661026 B TW I661026B
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thermally conductive
adhesive sheet
low
thermal conductivity
conductive adhesive
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TW104127182A
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TW201623504A (en
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加藤邦久
森田亘
武藤豪志
勝田祐馬
近藤健
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日商琳得科股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N3/00Generators in which thermal or kinetic energy is converted into electrical energy by ionisation of a fluid and removal of the charge therefrom
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2264/00Composition or properties of particles which form a particulate layer or are present as additives
    • B32B2264/10Inorganic particles
    • B32B2264/102Oxide or hydroxide
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2264/00Composition or properties of particles which form a particulate layer or are present as additives
    • B32B2264/10Inorganic particles
    • B32B2264/105Metal
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2264/00Composition or properties of particles which form a particulate layer or are present as additives
    • B32B2264/10Inorganic particles
    • B32B2264/107Ceramic
    • B32B2264/108Carbon, e.g. graphite particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/30Properties of the layers or laminate having particular thermal properties
    • B32B2307/302Conductive
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Laminated Bodies (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

本發明係提供可實現熱傳導性接著薄片之高熱傳導部及低熱傳導部之尺寸精度之提高,且低熱傳導部之低熱傳導率化,進而容易地層合於電子裝置上,可對該電子裝置之內部賦予充分之溫度差之熱傳導性接著薄片、其製造方法及使用其之電子裝置者,該熱傳導性接著薄片係含有包含高熱傳導部與低熱傳導部之基材、與接著劑層者,其係於該基材之一面上層合接著劑層,且該低熱傳導部中,於低熱傳導部全部體積中含有20~90體積%之中空填料,且於該基材之另一面,係以該低熱傳導部之與該接著劑層接觸之面相反側之面、與該高熱傳導部之與該接著劑層接觸之面相反側之面構成,或者該高熱傳導部與該低熱傳導部之至少任一者構成該基材之厚度之一部分而成之熱傳導性接著薄片、及其製造方法以及使用其之電子裝置。 The present invention provides an improvement in the dimensional accuracy of the high thermal conductivity portion and the low thermal conductivity portion of the thermally conductive adhesive sheet, and the low thermal conductivity of the low thermal conductivity portion can be easily laminated on an electronic device. A thermally conductive adhesive sheet that provides a sufficient temperature difference, a method for manufacturing the same, and an electronic device using the same. The thermally conductive adhesive sheet includes a base material including a high thermal conductivity portion and a low thermal conductivity portion, and an adhesive layer. An adhesive layer is laminated on one surface of the substrate, and the low-heat-conducting portion contains 20 to 90% by volume of hollow filler in the entire volume of the low-heat-conducting portion, and the low-heat-conducting portion is provided on the other side of the substrate. A surface opposite to a surface in contact with the adhesive layer, a surface opposite to a surface in contact with the adhesive layer of the high heat conduction portion, or at least one of the high heat conduction portion and the low heat conduction portion A thermally conductive adhesive sheet formed from a part of the thickness of the substrate, a method for manufacturing the same, and an electronic device using the same.

Description

熱傳導性接著薄片、其製造方法及使用其之電子裝置 Thermally conductive adhesive sheet, manufacturing method thereof, and electronic device using the same

本發明係關於熱傳導性接著薄片,尤其是電子裝置所用之熱傳導性接著薄片、其製造方法及使用其之電子裝置。 The present invention relates to a thermally conductive adhesive sheet, particularly a thermally conductive adhesive sheet used in an electronic device, a method for manufacturing the same, and an electronic device using the same.

過去以來,於電子裝置等之內部中,為了散熱或將熱流控制於特定方向,而使用具有高熱傳導性之薄片狀之散熱構件。電子裝置列舉為例如熱電轉換裝置、光電轉換裝置、大規模積體電路等半導體裝置等。 In the past, in the interior of electronic devices and the like, in order to dissipate heat or control heat flow in a specific direction, a sheet-like heat dissipating member having high thermal conductivity has been used. Examples of the electronic device include semiconductor devices such as a thermoelectric conversion device, a photoelectric conversion device, and a large-scale integrated circuit.

近年來,半導體裝置中,隨著該半導體裝置之小型化且高密度化等,動作時自內部產生之熱變得更高溫,於散熱不充分之情況下,使該半導體裝置本身之特性降低,有時會引起誤動作,最終與半導體裝置之破壞或壽命減低有關。作為該情況下用以使自半導體裝置所發生之熱效率良好地散熱至外部之方法,係進行在半導體裝置與散熱片(金屬構件)之間設置熱傳導性優異之散熱薄片。 In recent years, with the miniaturization and high density of the semiconductor device, the heat generated from the inside of the semiconductor device becomes higher during operation, and the characteristics of the semiconductor device are reduced when the heat dissipation is insufficient. In some cases, malfunction may be caused, which may ultimately be related to the destruction of the semiconductor device or a reduction in the lifetime. As a method for efficiently dissipating the heat generated from the semiconductor device to the outside in this case, a heat-radiating sheet having excellent thermal conductivity is provided between the semiconductor device and the heat-radiating fin (metal member).

且,此等電子裝置中,於熱電轉換裝置中,有進行上述之散熱控制者,但若將賦予至熱電元件之單面之熱控制 為在熱電元件內部之厚度方向之溫度差變大,則所得之電力變大,故已檢討使用薄片狀之散熱構件於特定方向選擇性控制散熱(效率良好地對熱電元件之內部賦予溫度差)。專利文獻1係揭示具有如圖7所示構造之熱電轉換元件。亦即,串聯連接P型熱電元件41與N型熱電元件42,且於其兩端部配置取出熱電動勢之電極43,構成熱電轉換模組46,於該熱電轉換模組46之兩面設置以兩種熱傳導率不同之材料構成之具有柔軟性之薄膜狀基板44、45者。於該薄膜狀基板44、45之與前述熱電轉換模組46接合面側設置熱傳導率低之材料(聚醯亞胺)47、48,於與前述熱電轉換模組46之接合面之相反側以位在薄膜狀基板44、45之外面之一部分之方式設置熱傳導率高之材料(銅)49、50。專利文獻2中揭示具有圖8所示構造之熱電轉換模組,使兼為高熱傳導率構件之電極54埋入於低熱傳導率之構件51、52中,彼等對熱電元件53,係透過導電性接著劑層55及絕緣性接著劑層56配置。 In addition, in these electronic devices, there is a person who performs the above-mentioned heat dissipation control in a thermoelectric conversion device, but if one side heat control is given to a thermoelectric element, In order to increase the temperature difference in the thickness direction of the thermoelectric element, the obtained power becomes larger. Therefore, it has been reviewed to use a sheet-shaped heat dissipation member to selectively control heat dissipation in a specific direction (the temperature difference is efficiently given to the interior of the thermoelectric element). . Patent Document 1 discloses a thermoelectric conversion element having a structure as shown in FIG. 7. That is, the P-type thermoelectric element 41 and the N-type thermoelectric element 42 are connected in series, and electrodes 43 for taking out thermoelectromotive force are arranged at both ends thereof to constitute a thermoelectric conversion module 46. Two sides of the thermoelectric conversion module 46 are provided with two The flexible thin film substrates 44 and 45 made of a material having a different thermal conductivity. Materials with low thermal conductivity (polyimide) 47, 48 are provided on the side of the film-like substrates 44, 45 on the joint surface with the thermoelectric conversion module 46, and on the side opposite to the joint surface with the thermoelectric conversion module 46, Materials (copper) 49 and 50 having high thermal conductivity are provided so as to be located on a part of the outer surfaces of the thin film substrates 44 and 45. Patent Document 2 discloses a thermoelectric conversion module having a structure shown in FIG. 8, and the electrode 54 which is also a high thermal conductivity member is buried in the low thermal conductivity members 51 and 52. The pair of thermoelectric elements 53 are conductive through The adhesive layer 55 and the insulating adhesive layer 56 are arranged.

[先前技術文獻] [Prior technical literature]

[專利文獻] [Patent Literature]

專利文獻1:日本專利第3981738號公報 Patent Document 1: Japanese Patent No. 3981738

專利文獻2:日本特開2011-35203號公報 Patent Document 2: Japanese Patent Application Laid-Open No. 2011-35203

如上述,尤其是以半導體裝置為主之電子裝置中,要求可使熱效率更良好地散熱至外部之散熱薄片、或除了熱傳導性優異以外亦具有使熱朝特定方向選擇性散熱,使該電子裝置之內部產生溫度梯度之功能之熱傳導性薄片。然而,本發明人等對於如上述之熱電轉換裝置之熱電元件,應用由高熱傳導部與低熱傳導部所構成之熱傳導性接著薄片進行檢討,發現有熱傳導性接著薄片之高熱傳導部或低熱傳導部之圖型之尺寸精度差,未獲得特定之溫度差之新的問題。尺寸精度差之理由列舉為構成熱傳導性薄片之高熱傳導部與低熱傳導部中之包含硬化收縮等之內部應力差等。 As described above, especially in electronic devices mainly composed of semiconductor devices, a heat-dissipating sheet capable of dissipating heat to the outside more efficiently, or having excellent thermal conductivity and selectively dissipating heat in a specific direction, is required to make the electronic device A thermally conductive sheet that functions as a temperature gradient inside. However, the present inventors reviewed the thermoelectric element of the thermoelectric conversion device described above by applying a thermally conductive adhesive sheet composed of a high thermal conductive part and a low thermal conductive part, and found that there is a high thermal conductive part or a low thermal conductive part with a thermal conductive adhesive sheet. The dimensional accuracy of the pattern is poor, and a new problem of a specific temperature difference is not obtained. The reason for the poor dimensional accuracy is a difference in internal stress including hardening shrinkage and the like in the high heat conductive portion and the low heat conductive portion constituting the heat conductive sheet.

本發明係鑑於上述問題,其課題係提供一種可實現熱傳導性接著薄片之高熱傳導部及低熱傳導部之尺寸精度提高,且低熱傳導部之低熱傳導率化,進而容易地層合於電子裝置上,可對電子裝置之內部賦予充分之溫度差之熱傳導性接著薄片、其製造方法及使用其之電子裝置。 The present invention has been made in view of the above problems, and an object thereof is to provide a dimensional accuracy improvement of a high thermal conductivity portion and a low thermal conductivity portion of a thermally conductive adhesive sheet, and a low thermal conductivity of the low thermal conductivity portion, so as to be easily laminated on an electronic device. A thermally conductive adhesive sheet capable of imparting a sufficient temperature difference to the inside of an electronic device, a method for manufacturing the same, and an electronic device using the same.

本發明人等為解決上述課題而重複積極檢討之結果,發現包含高熱傳導部與低熱傳導部之基材、與於該基材之一面層合接著劑層而構成熱傳導性接著薄片,且 該低熱傳導部含有特定量(體積%)之中空填料,且藉由以低熱傳導部之與該接著劑層接觸之面相反側之面、與該高熱傳導部之與該接著劑層接觸之面相反側之面,構成該基材之另一面,或者由該高熱傳導部及低熱傳導部之至少任一者構成該基材之厚度之一部分,可解決上述課題,因而完成本發明。 As a result of repeated active reviews by the present inventors in order to solve the above-mentioned problems, it was found that a base material including a high heat conductive portion and a low heat conductive portion, and an adhesive layer laminated on one surface of the base material constituted a heat conductive adhesive sheet, and The low-heat-conducting portion contains a specific amount (vol%) of a hollow filler, and the surface of the low-heat-conducting portion opposite to the surface in contact with the adhesive layer and the surface of the high-heat-conducting portion in contact with the adhesive layer The opposite side surface constitutes the other side of the base material, or at least one of the high heat conduction portion and the low heat conduction portion constitutes a part of the thickness of the base material, which can solve the above-mentioned problems, and thus completed the present invention.

亦即,本發明係提供以下之(1)~(15)者。 That is, the present invention provides the following (1) to (15).

(1)一種熱傳導性接著薄片,其係含有包含高熱傳導部與低熱傳導部之基材、與接著劑層部之熱傳導性接著薄片,其中,該低熱傳導部中,於低熱傳導部全部體積中含有20~90體積%之中空填料,又,於該基材之一面層合有接著劑層,且該基材之另一面,係以該低熱傳導部之與該接著劑層接觸之面相反側之面、與該高熱傳導部之與該接著劑層接觸之面之相反側之面構成,或者該高熱傳導部與該低熱傳導部之至少任一者構成該基材之厚度之一部分而成。 (1) A thermally conductive adhesive sheet comprising a base material including a high thermally conductive portion and a low thermally conductive portion, and a thermally conductive adhesive sheet having an adhesive layer portion, wherein the low thermally conductive portion is included in the entire volume of the low thermally conductive portion. Contains 20 to 90% by volume of hollow filler, and an adhesive layer is laminated on one surface of the substrate, and the other surface of the substrate is on the opposite side of the surface of the low heat conduction portion that is in contact with the adhesive layer The surface of the substrate, the surface opposite to the surface in contact with the adhesive layer of the high heat conduction portion, or at least one of the high heat conduction portion and the low heat conduction portion constitutes a part of the thickness of the substrate.

(2)如上述(1)之熱傳導性接著薄片,其中前述高熱傳導部與前述低熱傳導部,係各自獨立的構成前述基材之全部厚度。 (2) The thermally conductive adhesive sheet according to the above (1), wherein the high-heat-conducting portion and the low-heat-conducting portion are each independent and constitute the entire thickness of the substrate.

(3)如上述(1)之熱傳導性接著薄片,其中前述高熱傳導部及前述低熱傳導部係由樹脂組成物形成。 (3) The thermally conductive adhesive sheet according to the above (1), wherein the high heat conductive portion and the low heat conductive portion are formed of a resin composition.

(4)如上述(3)之熱傳導性接著薄片,其中構成前述高熱傳導部之前述樹脂組成物中,含有熱傳導性填料及/或導電性碳化合物。 (4) The thermally conductive adhesive sheet according to the above (3), wherein the resin composition constituting the high thermally conductive portion contains a thermally conductive filler and / or a conductive carbon compound.

(5)如上述(4)之熱傳導性接著薄片,其中前述熱傳導性填料,係含有選自由金屬氧化物、金屬氮化物、及金屬所成群組之至少1種。 (5) The thermally conductive adhesive sheet according to the above (4), wherein the thermally conductive filler contains at least one selected from the group consisting of a metal oxide, a metal nitride, and a metal.

(6)如上述(4)之熱傳導性接著薄片,其中前述熱傳導性填料,係含有金屬氧化物與金屬氮化物。 (6) The thermally conductive adhesive sheet according to the above (4), wherein the thermally conductive filler contains a metal oxide and a metal nitride.

(7)如上述(4)之熱傳導性接著薄片,其中前述導電性碳化合物,係包含選自由碳黑、碳奈米管、石墨烯、及碳奈米纖維所成群組之至少1種。 (7) The thermally conductive adhesive sheet according to the above (4), wherein the conductive carbon compound includes at least one selected from the group consisting of carbon black, carbon nanotubes, graphene, and carbon nanofibers.

(8)如上述(1)之熱傳導性接著薄片,其中前述中空填料,為玻璃中空填料、或二氧化矽中空填料。 (8) The thermally conductive adhesive sheet according to the above (1), wherein the hollow filler is a glass hollow filler or a silicon dioxide hollow filler.

(9)如上述(8)之熱傳導性接著薄片,其中前述玻璃中空填料、及二氧化矽中空填料之真密度,為0.1~0.6g/cm3(9) The thermally conductive adhesive sheet according to the above (8), wherein the true density of the glass hollow filler and the silicon dioxide hollow filler is 0.1 to 0.6 g / cm 3 .

(10)如上述(3)~(9)中任一項之熱傳導性接著薄片,其中構成前述高熱傳導部之樹脂組成物與構成前述低熱傳導部之樹脂組成物的複合硬化收縮率,為2%以下。 (10) The thermally conductive adhesive sheet according to any one of (3) to (9) above, wherein the composite hardening shrinkage ratio of the resin composition constituting the aforementioned high heat conduction portion and the resin composition constituting the aforementioned low heat conduction portion is 2 %the following.

(11)如上述(1)~(10)中任一項之熱傳導性接著薄片,其中前述基材之高熱傳導部的熱傳導率為0.5(W/m.K)以上,且低熱傳導部的熱傳導率為未達0.5(W/m.K)。 (11) The thermally conductive adhesive sheet according to any one of the above (1) to (10), wherein the thermal conductivity of the high thermal conductivity portion of the aforementioned substrate is 0.5 (W / m · K) or more, and the thermal conductivity of the low thermal conductivity portion The rate is less than 0.5 (W / m · K).

(12)如上述(1)~(11)中任一項之熱傳導性接著薄片,其中相對於前述基材之厚度而言,前述接著劑層之厚度的比率(接著劑層/基材),為0.005~1.0。 (12) The thermally conductive adhesive sheet according to any one of (1) to (11) above, wherein the ratio of the thickness of the adhesive layer to the thickness of the substrate (adhesive layer / substrate), It is 0.005 ~ 1.0.

(13)如(1)~(12)中任一項之熱傳導性接著薄片,其中前述接著劑層係含有聚矽氧系接著劑。 (13) The thermally conductive adhesive sheet according to any one of (1) to (12), wherein the adhesive layer contains a polysiloxane adhesive.

(14)一種電子裝置,其係層合有如上述(1)~(13)中任一項之熱傳導性接著薄片。 (14) An electronic device in which the thermally conductive adhesive sheet according to any one of (1) to (13) above is laminated.

(15)一種熱傳導性接著薄片之製造方法,其係製造如上述(1)~(13)中任一項之熱傳導性接著薄片之方法,其係包含於能夠剝離之支撐基材上,自由樹脂組成物形成之高熱傳導部、與由樹脂組成物形成之低熱傳導部形成基材之步驟;及於該基材層合接著劑層之步驟。 (15) A method for producing a thermally conductive adhesive sheet, which is a method for producing a thermally conductive adhesive sheet according to any one of (1) to (13) above, which is contained on a support substrate that can be peeled off, and free resin A step of forming a base material with a high heat conductive portion formed of a composition and a low heat conductive portion formed of a resin composition; and a step of laminating an adhesive layer on the base material.

依據本發明之熱傳導性接著薄片,可提供能實現熱傳導性接著薄片之高熱傳導部及低熱傳導部之尺寸精度提高,且低熱傳導部之低熱傳導率化,進而容易地層合於電子裝置上,可對電子裝置之內部賦予充分之溫度差之熱傳導性接著薄片、其製造方法及使用其之電子裝置。 According to the thermally conductive adhesive sheet of the present invention, the dimensional accuracy of the high thermal conductive part and the low thermal conductive part that can realize the thermal conductive adhesive sheet can be improved, and the low thermal conductivity of the low thermal conductive part can be easily laminated on the electronic device. A thermally conductive adhesive sheet that imparts a sufficient temperature difference to the inside of an electronic device, a method for manufacturing the same, and an electronic device using the same.

1、1A、1B‧‧‧熱傳導性接著薄片 1, 1A, 1B‧‧‧ Thermally conductive adhesive sheet

2‧‧‧被黏著體 2‧‧‧ adherend

4、4a、4b‧‧‧高熱傳導部 4, 4a, 4b ‧‧‧ high heat conduction part

5、5a、5b‧‧‧低熱傳導部 5, 5a, 5b ‧‧‧ low heat conduction part

6‧‧‧溫度差測定部 6‧‧‧Temperature difference measurement department

7‧‧‧基材 7‧‧‧ substrate

8‧‧‧接著劑層 8‧‧‧ Adhesive layer

10‧‧‧熱電轉換裝置 10‧‧‧ thermoelectric conversion device

11‧‧‧P型熱電元件 11‧‧‧P type thermoelectric element

12‧‧‧N型熱電元件 12‧‧‧N type thermoelectric element

13‧‧‧電極(銅) 13‧‧‧electrode (copper)

14a、14b‧‧‧高熱傳導部 14a, 14b‧‧‧‧High heat conduction part

14’a、14’b、14’c‧‧‧高熱傳導度 14’a, 14’b, 14’c‧‧‧High thermal conductivity

15’a、15’b、15’c‧‧‧低熱傳導部 15’a, 15’b, 15’c‧‧‧‧Low thermal conductivity

15’a、15’b‧‧‧低熱傳導部 15’a, 15’b‧‧‧Low heat conduction section

16‧‧‧熱電轉換模組 16‧‧‧thermoelectric conversion module

17‧‧‧16之第一面 The first side of 17‧‧‧16

18‧‧‧16之第二面 The second side of 18‧‧‧16

19‧‧‧支撐體 19‧‧‧ support

20‧‧‧接著劑層 20‧‧‧ Adhesive layer

30‧‧‧熱電轉換裝置 30‧‧‧ thermoelectric conversion device

31‧‧‧P型熱電元件 31‧‧‧P type thermoelectric element

32‧‧‧N型熱電元件 32‧‧‧N type thermoelectric element

33a、33b、33c‧‧‧電極(銅) 33a, 33b, 33c‧‧‧ electrode (copper)

34‧‧‧高熱傳導部 34‧‧‧High heat conduction section

35‧‧‧低熱傳導部 35‧‧‧Low heat conduction section

36‧‧‧支撐體 36‧‧‧ support

37‧‧‧熱電轉換模組 37‧‧‧thermoelectric conversion module

38‧‧‧熱電轉換裝置30之下表面 38‧‧‧The lower surface of thermoelectric conversion device 30

39‧‧‧熱電轉換裝置30之上表面 39‧‧‧The upper surface of thermoelectric conversion device 30

40‧‧‧接著劑層 40‧‧‧ Adhesive layer

41‧‧‧P型熱電元件 41‧‧‧P type thermoelectric element

42‧‧‧N型熱電元件 42‧‧‧N type thermoelectric element

43‧‧‧電極(銅) 43‧‧‧electrode (copper)

44‧‧‧薄膜狀基板 44‧‧‧ film substrate

45‧‧‧薄膜狀基板 45‧‧‧ film substrate

46‧‧‧熱電轉換模組 46‧‧‧ Thermoelectric Conversion Module

47、48‧‧‧熱傳導率低之材料(聚醯亞胺) 47, 48‧‧‧ materials with low thermal conductivity (polyimide)

49、50‧‧‧熱傳導率高之材料(銅) 49, 50‧‧‧ materials with high thermal conductivity (copper)

51、52‧‧‧低熱傳導率之構件 51, 52‧‧‧ low thermal conductivity components

53‧‧‧熱電元件 53‧‧‧thermoelectric element

54‧‧‧電極(銅) 54‧‧‧electrode (copper)

55‧‧‧導電性接著劑層 55‧‧‧ conductive adhesive layer

56‧‧‧絕緣性接著劑層 56‧‧‧ Insulating adhesive layer

圖1為顯示本發明之熱傳導性接著薄片之一例之立體圖。 FIG. 1 is a perspective view showing an example of a thermally conductive adhesive sheet according to the present invention.

圖2為顯示本發明之熱傳導性接著薄片之各種例之剖面圖。 Fig. 2 is a sectional view showing various examples of the thermally conductive adhesive sheet of the present invention.

圖3為顯示將本發明之熱傳導性接著薄片貼附於熱電 轉換模組時之熱電轉換裝置之一例之剖面圖。 FIG. 3 is a view showing a thermally conductive adhesive sheet of the present invention attached to a thermoelectric Sectional view of an example of a thermoelectric conversion device when converting a module.

圖4顯示將本發明之熱傳導性接著薄片與熱電轉換模組分解成各構成要件之立體圖之一例,(a)為設置於熱電轉換模組之支撐體表面側之熱電元件上之熱傳導性接著薄片之立體圖,(b)為熱電轉換模組之立體圖,(c)為設置於支撐體背面側之熱傳導性接著薄片之立體圖。 FIG. 4 shows an example of a perspective view in which the thermally conductive adhesive sheet and the thermoelectric conversion module of the present invention are decomposed into various constituent elements. (A) is a thermally conductive adhesive sheet provided on a thermoelectric element on the surface side of the support body of the thermoelectric conversion module. In a perspective view, (b) is a perspective view of a thermoelectric conversion module, and (c) is a perspective view of a thermally conductive adhesive sheet provided on a back surface side of a support.

圖5為用以測定本發明之熱傳導性接著薄片之高熱傳導部與低熱傳導部之溫度差之構成之說明圖,(a)為熱傳導性接著薄片,(b)為作為被接著體使用之玻璃基板之立體圖。 Fig. 5 is an explanatory diagram for measuring the structure of the temperature difference between the high heat conduction portion and the low heat conduction portion of the thermally conductive adhesive sheet of the present invention, (a) is a thermally conductive adhesive sheet, and (b) is a glass used as an adherend A perspective view of the substrate.

圖6為本發明之實施例所用之熱電轉換模組之立體圖。 FIG. 6 is a perspective view of a thermoelectric conversion module used in an embodiment of the present invention.

圖7為顯示過去之熱電轉換裝置之構成之一例之剖面圖。 Fig. 7 is a cross-sectional view showing an example of the structure of a conventional thermoelectric conversion device.

圖8為顯示過去之熱電轉換裝置之構成之另一例之剖面圖。 Fig. 8 is a sectional view showing another example of the structure of a conventional thermoelectric conversion device.

[熱傳導性接著薄片] [Thermal conductive adhesive sheet]

本發明之熱傳導性薄片為包含含有高熱傳導部與低熱傳導部之基材、與接著劑層熱傳導性接著薄片,其特徵於該低熱傳導部全部體積中含有20~90體積%之中空填料,且該基材之一面層合接著劑層,且該基材之另一面,係以 該低熱傳導部之與該接著劑層接觸之面相反側之面、與該高熱傳導部之與該接著劑層接觸之面相反側之面構成,或者該高熱傳導部與該低熱傳導部至少任一者構成熱傳導性接著薄片之厚度之一部分而成。 The thermally conductive sheet of the present invention includes a base material containing a high thermally conductive portion and a low thermally conductive portion, and a thermally conductive adhesive sheet with an adhesive layer. The low thermally conductive portion contains 20 to 90% by volume of a hollow filler in the entire volume, and One side of the substrate is laminated with an adhesive layer, and the other side of the substrate is The surface of the low heat conductive portion opposite to the surface in contact with the adhesive layer, the surface of the high heat conductive portion opposite to the surface in contact with the adhesive layer, or the high heat conductive portion and the low heat conductive portion are at least either One constitutes thermal conductivity and is a part of the thickness of the sheet.

本發明之熱傳導性接著薄片係由基材與接著層構成。 The thermally conductive adhesive sheet of the present invention is composed of a substrate and an adhesive layer.

使用圖式說明本發明之熱傳導性接著薄片之構成等。 The structure and the like of the thermally conductive adhesive sheet of the present invention will be described using drawings.

<基材> <Substrate>

基材係由熱傳導率彼此不同之高熱傳導部與低熱傳導部構成。 The base material is composed of a high thermally conductive portion and a low thermally conductive portion having different thermal conductivity.

圖1為顯示本發明之熱傳導性接著薄片之一例之立體圖。熱傳導性接著薄片1係由包含高熱傳導部4a、4b與低熱傳導部5a、5b之基材7與接著劑層8構成,高熱傳導部與低熱傳導部交互配置。亦即,基材7之一面層合接著劑層8,且基材7之另一面係以該低熱傳導部5a、5b之與該接著劑層接觸之面相反側之面,與該高熱傳導部4a、4b之與該接著劑層8接觸之面之相反側之面構成。 FIG. 1 is a perspective view showing an example of a thermally conductive adhesive sheet according to the present invention. The thermally conductive adhesive sheet 1 is composed of a base material 7 including a high heat conductive portion 4a, 4b and a low heat conductive portion 5a, 5b, and an adhesive layer 8, and the high heat conductive portion and the low heat conductive portion are alternately arranged. That is, one side of the base material 7 is laminated with the adhesive layer 8, and the other side of the base material 7 is a surface on the opposite side of the low heat conductive portions 5 a and 5 b from the surface in contact with the adhesive layer, and the high heat conductive portion The surfaces of 4a and 4b opposite to the surface in contact with the adhesive layer 8 are constituted.

構成熱傳導性接著薄片1之基材7之高熱傳導部與低熱傳導部之配置(以下有時稱為「厚度構成」)係如以下所述,並未特別限制。 The arrangement (hereinafter sometimes referred to as the "thickness constitution") of the high heat conduction portion and the low heat conduction portion of the base material 7 constituting the thermally conductive adhesive sheet 1 is as described below, and is not particularly limited.

圖2顯示本發明之熱傳導性接著薄片之剖面圖(包含配置)之各種例。圖2之(a)為圖1之剖面圖,高熱傳導部4與低熱傳導部5各自獨立地構成基材7之全部厚 度。又,圖2之(b)~(g)為高熱傳導部4與低熱傳導部5之至少任一者構成基材之厚度之一部分。具體而言,圖2之(b)、(d)係低熱傳導部5構成基材7之厚度之一部分,基材7之與接著劑層8接觸之面僅由高熱傳導部4形成。進而,圖2之(c)、(e)係高熱傳導部4構成基材7之厚度之一部分,且基材7之與接著劑層8接觸之面僅由低熱傳導部5形成。圖2之(f)係高熱傳導部4構成基材7之厚度之一部分,基材7之與接著劑層8接觸之面由高熱傳導部4與低熱傳導部5兩者形成。基材7之與接著劑層8接觸之面相反側之面僅由低熱傳導部5形成。圖2之(g)係低熱傳導部5構成基材7之厚度之一部分,基材7之與接著劑層8接觸之面由高熱傳導部4與低熱傳導部5兩者形成,基材7之與接著劑層8接觸之面相反側之面僅由高熱傳導部4形成。基材7之厚度構成可配合應用之電子裝置之規格適當選擇。例如,就使熱朝特定方向選擇性散熱之觀點而言,較好選擇例如圖2之(a)~(g)之厚度構成,更好為高熱傳導部與低熱傳導部各自獨立構成基材之全部厚度,亦即(a)之厚度構成進而更佳。且,就使電子裝置之內部產生之熱朝外部有效的散熱之觀點而言,配合電子裝置之規格選擇例如圖2之(a)~(g)之厚度構成。此時,若將高熱傳導部之體積增大,且增大與應用之裝置面對向之接觸面積之構成,則可有效的控制散熱。 FIG. 2 shows various examples of the cross-sectional view (including the arrangement) of the thermally conductive adhesive sheet of the present invention. (A) of FIG. 2 is a cross-sectional view of FIG. 1, and each of the high heat conducting portion 4 and the low heat conducting portion 5 independently constitutes the entire thickness of the base material 7. degree. Moreover, (b)-(g) of FIG. 2 is a part of thickness of a base material in which at least any one of the high heat conduction part 4 and the low heat conduction part 5 is comprised. Specifically, parts (b) and (d) of FIG. 2 constitute a part of the thickness of the base material 7, and the surface of the base material 7 in contact with the adhesive layer 8 is formed only by the high heat conductive portion 4. Further, (c) and (e) in FIG. 2 constitute a part of the thickness of the base material 7, and the surface of the base material 7 in contact with the adhesive layer 8 is formed only by the low heat conductive portion 5. (F) of FIG. 2 is a part of the thickness of the base material 7 of the high heat conduction part 4, and the surface of the base material 7 contacting the adhesive layer 8 is formed by both the high heat conduction part 4 and the low heat conduction part 5. The surface of the base material 7 opposite to the surface in contact with the adhesive layer 8 is formed only by the low heat conduction portion 5. (G) of FIG. 2 is a part of the thickness of the base material 7 of the low heat conduction portion 5. The surface of the base material 7 in contact with the adhesive layer 8 is formed by both the high heat conduction portion 4 and the low heat conduction portion 5. The surface on the opposite side to the surface in contact with the adhesive layer 8 is formed only by the high heat conduction portion 4. The thickness of the base material 7 can be appropriately selected according to the specifications of the applied electronic device. For example, from the viewpoint of selectively dissipating heat in a specific direction, it is preferable to select a thickness configuration such as (a) to (g) in FIG. The overall thickness, that is, the thickness composition of (a) is even more preferable. In addition, from the viewpoint of efficiently dissipating heat generated inside the electronic device to the outside, the thickness configuration of (a) to (g) in FIG. 2 is selected in accordance with the specifications of the electronic device. At this time, if the volume of the high heat conduction portion is increased, and the contact area facing the device to be applied is increased, heat dissipation can be effectively controlled.

〈低熱傳導部〉 <Low heat conduction part>

本發明之低熱傳導部係由含中空填料與後述樹脂之樹脂組成物形成。藉由含有中空填料,而抑制低熱傳導部之硬化收縮率,且藉由縮小與高熱傳導部之硬化收縮率之差而減低後述之複合硬化收縮率,結果可抑制高熱傳導部與低熱傳導部各自之圖型尺寸精度之惡化。 The low thermal conductivity portion of the present invention is formed of a resin composition containing a hollow filler and a resin described later. The inclusion of a hollow filler suppresses the hardening shrinkage rate of the low heat conduction portion, and reduces the composite hardening shrinkage rate described later by reducing the difference between the hardening shrinkage rate of the high heat conduction portion and the low heat conduction portion. Degradation of the pattern size accuracy.

前述低熱傳導部之形狀並無特別限制,可依據後述之電子裝置之規格適度變更。此處,本發明之低熱傳導部係指熱傳導率比前述高熱傳導部低。 The shape of the aforementioned low heat conduction portion is not particularly limited, and can be appropriately changed according to the specifications of the electronic device described later. Here, the low thermal conductivity portion of the present invention means that the thermal conductivity is lower than the high thermal conductivity portion.

作為中空填料並無特別限制,可使用習知者,列舉為例如玻璃中空球、二氧化矽中空球、白砂中空球、石炭灰中空球、金屬矽酸鹽等之中空球(中空體)之無機系中空填料,又列舉為丙烯腈、偏氯乙烯、酚樹脂、環氧樹脂、脲樹脂等之中空球(中空體)之有機樹脂系中空填料。中空填料可單獨使用1種,或組合2種以上使用。其中,物質本身之熱傳導率在金屬氧化物中較低,進而基於體積電阻率、成本之觀點而言,以無機系中空填料的玻璃中空填料、或二氧化系中空填料較佳。具體而言,玻璃中空填料列舉為例如住友3M公司製造之GLASS BUBBLES(石灰硼矽酸鈉玻璃)等,二氧化矽中空填料列舉為例如日鐵鑛業股份有限公司製之SILINAX(註冊商標)等。 The hollow filler is not particularly limited, and known ones can be used, and examples include inorganic hollow glass (hollow bodies) such as glass hollow balls, silicon dioxide hollow balls, white sand hollow balls, charcoal ash hollow balls, and metal silicates. The hollow filler is an organic resin hollow filler including hollow spheres (hollow bodies) such as acrylonitrile, vinylidene chloride, phenol resin, epoxy resin, and urea resin. The hollow filler may be used singly or in combination of two or more kinds. Among them, the thermal conductivity of the substance itself is relatively low among metal oxides, and further, from the viewpoints of volume resistivity and cost, glass hollow fillers of inorganic hollow fillers or dioxide hollow fillers are preferred. Specifically, glass hollow fillers include, for example, GLASS BUBBLES (lime sodium borosilicate glass) manufactured by Sumitomo 3M Corporation, and silicon dioxide hollow fillers include, for example, SILINAX (registered trademark) manufactured by Nippon Steel Mining Corporation.

又,本發明中所謂「中空填料」係指具有以填料作為構成材料之外殼,且內部為中空構造(內部除空氣以外, 亦可以惰性氣體等氣體充滿,亦可為真空)之填料,該中空構造並無特別限制,例如,中空構造可為球體,亦可為橢圓體等,中空構造亦可為複數種。 In the present invention, the term "hollow filler" refers to a housing having a filler as a constituent material and a hollow structure inside (except for air inside, It can also be filled with a gas such as an inert gas or a vacuum). The hollow structure is not particularly limited. For example, the hollow structure can be a sphere or an ellipsoid. The hollow structure can also be a plurality of types.

中空填料之形狀並無特別限制,只要在貼附於所應用之電子裝置、元件等時,不因該等之接觸或機械損傷而損及電子裝置、元件等之電特性等之形狀即可,例如,可為板狀(包含鱗片狀)、球狀、針狀、棒狀、纖維狀之任一種。 The shape of the hollow filler is not particularly limited, as long as it does not damage the electrical characteristics of the electronic device, component, etc. due to such contact or mechanical damage when attached to the applied electronic device, component, etc., For example, it may be any of a plate shape (including a scale shape), a spherical shape, a needle shape, a rod shape, and a fibrous shape.

中空填料之尺寸就使中空填料均勻分散於低熱傳導部之厚度方向,降低熱傳導性之觀點而言,平均粒徑較好為0.1~200μm,更好為1~100μm,又更好為10~80μm,最好為20~50μm。中空填料之平均粒徑若為該範圍,則不易引起粒子彼此之凝聚,可均勻分散。再者,對低熱傳導部之填充密度充分,在物質界面之低熱傳導部亦不會變脆。又,平均粒徑可利用例如Coulter Counter法測定。 The size of the hollow filler is from the viewpoint of uniformly dispersing the hollow filler in the thickness direction of the low-heat-conducting portion and reducing the thermal conductivity, and the average particle diameter is preferably 0.1 to 200 μm, more preferably 1 to 100 μm, and even more preferably 10 to 80 μm. , Preferably 20 to 50 μm. If the average particle diameter of the hollow filler is within this range, it is difficult to cause the particles to agglomerate, and the particles can be uniformly dispersed. In addition, the low heat conduction portion has a sufficient packing density, and the low heat conduction portion at the material interface does not become brittle. The average particle diameter can be measured by, for example, the Coulter Counter method.

中空填料之含量係依據其粒子形狀適度調整,在接著性樹脂組成物中為20~90體積%,較好為40~80體積%,更好為50~70體積%。中空填料之含量未達20體積%時,硬化收縮變大使高熱傳導部及低熱傳導部之圖型尺寸精度降低。且,中空填料之含量超過90體積%時,無法維持低熱傳導部之機械強度。中空填料之含量若在該範圍,則有效抑制硬化收縮,且散熱特性、耐折性、耐彎曲性優異,而維持低熱傳導部之機械強度。 The content of the hollow filler is appropriately adjusted according to its particle shape, and is 20 to 90% by volume, preferably 40 to 80% by volume, and more preferably 50 to 70% by volume in the adhesive resin composition. When the content of the hollow filler is less than 20% by volume, the pattern size accuracy of the high heat conduction portion and the low heat conduction portion of the hardened shrinkage change decreases. In addition, when the content of the hollow filler exceeds 90% by volume, the mechanical strength of the low heat conduction portion cannot be maintained. If the content of the hollow filler is within this range, it will effectively suppress hardening and shrinkage, and will have excellent heat dissipation characteristics, folding resistance, and bending resistance, while maintaining the mechanical strength of the low heat conduction portion.

中空填料之真密度較好為0.1~0.6g/cm3,更好為0.2~0.5g/cm3,又更好為0.3~0.4g/cm3。中空填料之真密度若在該範圍,則絕熱特性、耐壓性優異,形成低熱傳導部時中空填料亦不會碎裂,且也不會損及低熱傳導部之熱傳導性。 The true density of the hollow filler is preferably from 0.1 to 0.6 g / cm 3 , more preferably from 0.2 to 0.5 g / cm 3 , and even more preferably from 0.3 to 0.4 g / cm 3 . If the true density of the hollow filler is within this range, the thermal insulation properties and pressure resistance will be excellent. The hollow filler will not be broken when the low thermal conductive portion is formed, and the thermal conductivity of the low thermal conductive portion will not be impaired.

此處,所謂「真密度」為以比重計(pycnometer)法(基於阿基米德原理之氣相法)測定之密度。例如,可使用比重計(氣相置換式真密度計,例如Micromeritics公司製之AccuPycll 1340)測定。 Here, the "true density" is a density measured by a pycnometer method (a gas phase method based on Archimedes' principle). For example, the hydrometer can be measured using a hydrometer (gaseous displacement true density meter such as AccuPycll 1340 manufactured by Micromeritics).

(樹脂) (Resin)

本發明所用之樹脂並無特別限制,可自電子零件領域等中使用者之中適當選擇任意之樹脂。 The resin used in the present invention is not particularly limited, and any resin can be appropriately selected from users in the field of electronic parts and the like.

作為樹脂列舉為熱硬化性樹脂、熱可塑性樹脂、光硬化性樹脂等。構成前述低熱傳導部之樹脂聚乙烯、聚丙烯等聚烯烴系樹脂;聚苯乙烯等苯乙烯系樹脂;聚甲基丙烯酸甲酯等丙烯酸系樹脂;聚醯胺(尼龍6、尼龍66等)、聚間-伸苯基鄰苯二甲醯胺、聚對-伸苯基對苯二甲醯胺等聚醯胺系樹脂;聚對苯二酸乙二酯、聚對苯二酸丁二酯、聚萘二酸乙二酯、聚丙烯酸酯等之聚酯系樹脂;降冰片烯系聚合物、單環之環狀烯烴系聚合物、環狀共軛二烯系聚合物、乙烯基脂環式烴聚合物、及該等之氫化物等脂環烯烴系聚合物;氯乙烯;聚醯亞胺;聚醯胺醯亞胺;聚苯醚;聚醚酮、聚醚醚酮;聚碳酸酯;聚碸、聚 醚碸等之聚碸系樹脂;聚苯硫醚;聚矽氧樹脂;及該等之高分子兩種以上之組合等。該等中,基於耐熱性優異、散熱性易於降低之觀點,較好為聚醯胺系樹脂、聚醯亞胺、聚醯胺醯亞胺及聚矽氧樹脂。 Examples of the resin include a thermosetting resin, a thermoplastic resin, and a photocurable resin. Polyethylene resins such as polyethylene and polypropylene constituting the aforementioned low thermal conductivity resins; polyolefin resins such as polystyrene; styrene resins such as polystyrene; acrylic resins such as polymethyl methacrylate; polyamides (nylon 6, nylon 66, etc.); Polymethylene resins such as poly-m-phenylene phthalate, poly-p-phenylene p-xylylenediamine; polyethylene terephthalate, polybutylene terephthalate, Polyester resins such as polyethylene naphthalate, polyacrylate; norbornene-based polymers, monocyclic cyclic olefin-based polymers, cyclic conjugated diene-based polymers, vinyl alicyclics Hydrocarbon polymers and alicyclic olefin polymers such as hydrides; vinyl chloride; polyimide; polyimide; imide; polyphenylene ether; polyetherketone, polyetheretherketone; polycarbonate; Poly Polyfluorene-based resins such as ethers; polyphenylene sulfide; silicone resins; and combinations of two or more of these polymers. Among these, from the viewpoints of excellent heat resistance and easy reduction of heat dissipation properties, polyamine resins, polyimides, polyimides, and silicone resins are preferred.

〈其他成分〉 〈Other ingredients〉

低熱傳導部之樹脂組成物中亦可視需要在適當範圍內含有例如光聚合起始劑、交聯劑、填充劑、可塑劑、抗老化劑、抗氧化劑、紫外線吸收劑、顏料或染料等著色劑、黏著賦予劑、抗靜電劑、偶合劑等添加劑。 The resin composition of the low-thermal-conduction section may contain a coloring agent such as a photopolymerization initiator, a cross-linking agent, a filler, a plasticizer, an anti-aging agent, an antioxidant, an ultraviolet absorber, a pigment, or a dye in an appropriate range as necessary. Additives such as adhesion-imparting agents, antistatic agents, and coupling agents.

〈高熱傳導部〉 <High heat conduction section>

高熱傳導部係由樹脂組成物形成,只要熱傳導率比前述低熱傳導部高之材料即無特別限制。 The high thermal conductivity portion is formed of a resin composition, and there is no particular limitation as long as the material has a higher thermal conductivity than the aforementioned low thermal conductivity portion.

前述高熱傳導部之形狀與前述低熱傳導部之形狀同樣,並無特別限制,可依據後述之電子裝置等之規格適當變更。 The shape of the high-heat-conducting portion is the same as the shape of the low-heat-conducting portion, and is not particularly limited, and may be appropriately changed according to specifications of an electronic device and the like described later.

作為樹脂列舉為前述低熱傳導部所用之熱硬化性樹脂及能量線硬化性樹脂等同樣之樹脂。通常,基於機械特性、密著性等之觀點,係使用與低熱傳導部相同之樹脂。 Examples of the resin include similar resins such as thermosetting resins and energy ray-curable resins used in the aforementioned low-thermal-conducting portion. In general, from the viewpoints of mechanical properties, adhesion, and the like, the same resin as that of the low heat conduction portion is used.

高熱傳導部中,為了抑制硬化收縮且調整為後述之期望熱傳導率,較好由包含上述樹脂與熱傳導性填料及/或導電性碳化合物之樹脂組成物所形成。 In the high thermal conductivity portion, in order to suppress curing shrinkage and adjust to a desired thermal conductivity to be described later, it is preferably formed of a resin composition containing the resin, a thermally conductive filler, and / or a conductive carbon compound.

以下,有時將熱傳導性填料及導電性碳化合物稱為「熱傳導率調整用物質」。 Hereinafter, a thermally conductive filler and a conductive carbon compound are sometimes referred to as "a substance for adjusting thermal conductivity".

(熱傳導性填料及導電性碳化合物) (Thermal conductive filler and conductive carbon compound)

熱傳導性填料並無特別限制,較好為選自二氧化矽、氧化鋁、氧化鎂等金屬氧化物、氮化矽、氮化鋁、氮化鎂、氮化硼等金屬氮化物、銅、鋁等金屬之至少一種,導電性碳化合物較好為選自碳黑、碳奈米管(CNT)、石墨烯、碳奈米纖維等之至少一種。該等熱傳導性填料及導電性碳化合物可單獨使用1種,或組合2種以上使用。該等中,熱傳導率調整用物質以熱傳導性填料較佳。再者,包含金屬氧化物與金屬氮化物作為熱傳導性填料時,金屬氧化物與金屬氮化物之質量比率較好為10:90~90:10,更好為20:80~80:20,又更好為50:50~75:25。 The thermally conductive filler is not particularly limited, and is preferably selected from metal oxides such as silicon dioxide, aluminum oxide, and magnesium oxide, metal nitrides such as silicon nitride, aluminum nitride, magnesium nitride, and boron nitride, copper, and aluminum. The conductive carbon compound is preferably at least one selected from carbon black, carbon nanotube (CNT), graphene, carbon nanofiber, and the like. These thermally conductive fillers and conductive carbon compounds may be used singly or in combination of two or more kinds. Among these, the thermal conductivity filler is preferably a thermally conductive filler. Furthermore, when a metal oxide and a metal nitride are included as the thermally conductive filler, the mass ratio of the metal oxide and the metal nitride is preferably 10:90 to 90:10, more preferably 20:80 to 80:20, and It is more preferably 50: 50 ~ 75: 25.

熱傳導率調整用物質之形狀並無特別限制,只要在貼附於所應用之電子裝置、元件等時,不會因該等之接觸或機械損傷而損及電子裝置、元件等之電特性等之形狀即可,例如,可為板狀(包含鱗片狀)、球狀、針狀、棒狀、纖維狀之任一種。又,高熱傳導部中使用之熱傳導性填料不包含前述「中空填料」。 The shape of the material for adjusting the thermal conductivity is not particularly limited, as long as it is attached to the applied electronic device, component, etc., it will not damage the electrical characteristics of the electronic device, component, etc. due to such contact or mechanical damage. The shape is sufficient, and for example, it may be any of a plate shape (including a scale shape), a spherical shape, a needle shape, a rod shape, and a fiber shape. The thermally conductive filler used in the high thermally conductive portion does not include the aforementioned "hollow filler".

熱傳導率調整用物質之尺寸就使熱傳導率調整用物質朝高熱傳導部之厚度方向均勻分散而提高熱傳導性之觀點而言,例如,平均粒徑較好為0.1~200μm,更好為1~100μm,又更好為5~50μm,最好為10~30μm。又, 平均粒徑可利用例如Coulter Counter法測定。熱傳導率調整用物質之平均粒徑若為該範圍,則不會使各物質內部之熱傳導變小,結果提高高熱傳導部之熱傳導率。且,不易引起粒子彼此之凝聚,可均勻分散,進而,對高熱傳導部之填充密度充分,在物質界面之高熱傳導部亦不會變脆。 The size of the material for adjusting thermal conductivity From the viewpoint of improving the thermal conductivity by uniformly dispersing the material for adjusting thermal conductivity in the thickness direction of the high heat conductive portion, for example, the average particle diameter is preferably 0.1 to 200 μm, and more preferably 1 to 100 μm. , And more preferably 5 to 50 μm, and most preferably 10 to 30 μm. also, The average particle diameter can be measured by, for example, the Coulter Counter method. If the average particle diameter of the material for thermal conductivity adjustment is within this range, the thermal conductivity inside each material will not be reduced, and as a result, the thermal conductivity of the high thermal conductivity portion will be improved. In addition, it is not easy to cause particles to agglomerate with each other, and they can be uniformly dispersed. Furthermore, the filling density of the high heat conduction portion is sufficient, and the high heat conduction portion at the material interface does not become brittle.

熱傳導率調整用物質之含量係依據期望之熱傳導率適當調整,在樹脂組成物中較好為40~99質量%,更好為50~95質量%,最好為50~80質量%。熱傳導率調整用物質之含量若在該範圍,則散熱特性、耐折性、耐彎曲性優異,而維持高熱傳導部之強度。 The content of the thermal conductivity adjusting substance is appropriately adjusted according to the desired thermal conductivity, and it is preferably 40 to 99% by mass, more preferably 50 to 95% by mass, and most preferably 50 to 80% by mass in the resin composition. When the content of the thermal conductivity adjusting substance is within this range, the heat dissipation characteristics, folding resistance, and bending resistance are excellent, and the strength of the high thermal conductivity portion is maintained.

〈其他成分〉 〈Other ingredients〉

高熱傳導部中之樹脂組成物中,進而與前述低熱傳導部同樣,亦可視需要在適當範圍內含相同種類之添加劑。 In the resin composition in the high heat conduction portion, the same kind of additives may be contained in an appropriate range as necessary in the same manner as the aforementioned low heat conduction portion.

高熱傳導部及低熱傳導部之各層之厚度較好為1~200μm,更好為3~100μm。若為該範圍,則可使熱朝特定之方向選擇性散熱。且,高熱傳導部及低熱傳導部之各自之層之厚度可相同亦可不同。 The thickness of each layer of the high heat conduction portion and the low heat conduction portion is preferably 1 to 200 μm, and more preferably 3 to 100 μm. Within this range, heat can be selectively radiated in a specific direction. In addition, the thicknesses of the respective layers of the high heat conductive portion and the low heat conductive portion may be the same or different.

高熱傳導部及低熱傳導部之各自之層之寬度雖依據所應用之電子裝置之規格適當調整,但通常為0.01~3mm,較好為0.1~2mm,更好為0.5~1.5mm。若為該範圍,則可使熱朝特定之方向選擇性散熱。又,高熱傳導部及低熱傳導部之各自之層之寬度可相同亦可不同。 Although the widths of the respective layers of the high heat conduction portion and the low heat conduction portion are appropriately adjusted according to the specifications of the applied electronic device, they are usually 0.01 to 3 mm, preferably 0.1 to 2 mm, and more preferably 0.5 to 1.5 mm. Within this range, heat can be selectively radiated in a specific direction. In addition, the widths of the respective layers of the high heat conduction portion and the low heat conduction portion may be the same or different.

高熱傳導部之熱傳導率只要比低熱傳導部充分高即可,熱傳導率較好為0.5(W/m.K)以上,更好為1.0(W/m.K)以上,又更好為1.3(W/m.K)以上。高熱傳導部之熱傳導率之上限並未特別限制,但通常較好為2000(W/m.K)以下,更好為500(W/m.K)以下。 The thermal conductivity of the high thermal conductivity portion may be sufficiently higher than that of the low thermal conductivity portion. The thermal conductivity is preferably 0.5 (W / m · K) or more, more preferably 1.0 (W / m · K) or more, and even 1.3 ( W / m.K) or more. The upper limit of the thermal conductivity of the high heat conductive portion is not particularly limited, but it is usually preferably 2000 (W / m · K) or less, and more preferably 500 (W / m · K) or less.

低熱傳導部之熱傳導率較好未達0.5(W/m.K),更好為0.3(W/m.K)以下,又更好為0.25(W/m.K)以下。高熱傳導部及低熱傳導部之各自傳導率若為如上述之範圍,則可使熱朝特定之方法選擇性散熱。 The thermal conductivity of the low heat conduction portion is preferably less than 0.5 (W / m · K), more preferably 0.3 (W / m · K) or less, and even more preferably 0.25 (W / m · K) or less. As long as the respective thermal conductivity of the high heat conductive portion and the low heat conductive portion is in the range described above, the heat can be selectively radiated toward a specific method.

構成前述高熱傳導部樹脂組成物及構成前述低熱傳導部之樹脂組成物之複合硬化收縮率較好為2%以下,更好為1%以下,又更好為0.8%以下。複合收縮率若在該範圍,則高熱傳導部及低熱傳導部之圖形尺寸精度提高,使熱朝特定之方向選擇性散熱,可對前述電子裝置等之內部賦予充分之溫度差。 The composite hardening shrinkage rate of the resin composition constituting the high-heat-conducting portion and the resin composition constituting the low-heat-conduction portion is preferably 2% or less, more preferably 1% or less, and still more preferably 0.8% or less. If the compound shrinkage rate is within this range, the pattern size accuracy of the high heat conduction portion and the low heat conduction portion is improved, and heat is selectively radiated in a specific direction, and a sufficient temperature difference can be given to the inside of the aforementioned electronic device and the like.

又,本發明中,上述「複合硬化收縮率」係測定由構成前述高熱傳導部之樹脂組成物形成之例如條狀圖型,與由構成前述低熱傳導部之樹脂組成物形成之例如條狀圖型所成之複合圖型(參照例如圖1、圖2(a))之硬化前後之尺寸變化,且藉以下之式定義並算出。 In the present invention, the "complex hardening shrinkage ratio" is a bar graph formed of, for example, a resin composition constituting the high-heat-conducting portion and a bar graph formed of a resin composition constituting the low-heat-conduction portion. The dimensional change before and after hardening of a composite pattern (see, for example, FIG. 1 and FIG. 2 (a)) formed by the pattern is defined and calculated by the following formula.

複合硬化收縮率(%)= [(硬化前條狀圖型間距方向總寬-硬化後條狀圖型間距方向總寬)/硬化前條狀圖型間距方向總寬]×100 Compound hardening shrinkage (%) = [(Total width of strip pattern pitch before hardening-Total width of strip pattern pitch after hardening) / Total width of strip pattern pitch before hardening] × 100

具體而言,係藉由使用數位式萬用錶(日本光器公司製,NRM-S3-XY型),測定硬化前後之下述所示規格之條狀圖型(接著性樹脂組成物)群中,由高熱傳導部形成用樹脂組成物形成之高熱傳導部條狀圖型之間距方向之寬度,與由低熱傳導部形成用樹脂組成物形成之低熱傳導部條狀圖型之間距方向之寬度之合計寬度(亦即,線圖型之間距方向總寬)而進行。 Specifically, by using a digital multimeter (manufactured by Nippon Koki Co., Ltd., NRM-S3-XY type), the bar graph (adhesive resin composition) group of the specifications shown below before and after curing is measured. Sum of the width in the pitch direction of the strip pattern of the high heat conductive portion formed by the resin composition for the formation of the high heat conductive portion and the width in the pitch direction of the strip pattern of the low heat conductive portion formed by the resin composition for the formation of the low heat conductive portion The width (that is, the total width of the line pattern direction) is performed.

尺寸測定用樣品之規格如下。 The specifications of the dimensional measurement samples are as follows.

.條狀圖型(接著性樹脂組成物)群:100mm×100mm,厚度100μm . Bar pattern (adhesive resin composition) group: 100mm × 100mm, thickness 100μm

.高熱傳導部:條狀寬度1mm,長度100mm,厚度100μm . High heat conduction section: strip width 1mm, length 100mm, thickness 100μm

.低熱傳導部:條狀寬度1mm,長度100mm,厚度100μm . Low thermal conductivity: strip width 1mm, length 100mm, thickness 100μm

.使高熱傳導部(條狀)與低熱傳導部(條狀)朝間距方向交互配置(但,條狀間之空間設為零) . Alternately arrange the high heat conduction part (stripe) and the low heat conduction part (stripe) toward the pitch direction (however, the space between the strips is set to zero)

此外,例如,如圖2(b)~圖2(g)般,熱傳導性接著薄片之厚度之構成不同(圖1、圖2(a)中包含高熱傳導部、低熱傳導部之厚度彼此不同之情況;但高熱傳導部、低熱傳導部之至少任一者為條狀圖型)時之尺寸測定用樣品之規格為維持熱傳導性接著薄片之厚度之構成,僅使高熱傳導部、低熱傳導部之各層之厚度分別以等倍之厚度增加或減少,使層整體之總厚度成為100μm。 In addition, for example, as shown in FIG. 2 (b) to FIG. 2 (g), the thickness of the thermally conductive adhesive sheet is different. (The thicknesses of the high heat conduction portion and the low heat conduction portion in FIG. Case; but at least one of the high heat conduction part and the low heat conduction part is a bar graph type) The size measurement sample is configured to maintain the heat conductivity and then the thickness of the sheet, and only the high heat conduction part and the low heat conduction part are used. The thickness of each layer is increased or decreased by an equal thickness, so that the total thickness of the entire layer becomes 100 μm.

高熱傳導部之於150℃之儲存彈性率較好為0.1MPa以上,更好為0.15MPa以上,又更好為1MPa以上。此外,低熱傳導部之於150℃之儲存彈性率較好為0.1MPa以上,更好為0.15MPa以上,又更好為1MPa以上。高熱傳導部及低熱傳導部於150℃之儲存彈性率為0.1MPa以上時,可抑制熱傳導性接著薄片過度變形,可安定散熱。高熱傳導部及低熱傳導部於150℃之儲存彈性率之上限並無特別限制,較好為500MPa以下,更好為100MPa以下,又更好為50MPa以下。 The storage elastic modulus of the high heat conduction part at 150 ° C is preferably 0.1 MPa or more, more preferably 0.15 MPa or more, and even more preferably 1 MPa or more. In addition, the storage elastic modulus at 150 ° C. of the low heat conduction portion is preferably 0.1 MPa or more, more preferably 0.15 MPa or more, and even more preferably 1 MPa or more. When the storage elastic modulus of the high heat conduction part and the low heat conduction part at 150 ° C is 0.1 MPa or more, the thermal conductivity can be suppressed, and the sheet can be excessively deformed, and the heat can be stably dissipated. The upper limit of the storage elastic modulus of the high heat conductive portion and the low heat conductive portion at 150 ° C is not particularly limited, but is preferably 500 MPa or less, more preferably 100 MPa or less, and even more preferably 50 MPa or less.

高熱傳導部及低熱傳導部之於150℃之儲存彈性率可藉由調整前述樹脂組成物,或熱傳導調整用物質之含量調整。 The storage elastic modulus at 150 ° C. of the high heat conduction portion and the low heat conduction portion can be adjusted by adjusting the content of the resin composition or the substance for heat conduction adjustment.

又,於150℃之儲存彈性率係利用動態彈性率測定裝置(TA儀器公司製,機種名「DMAQ800」),以初期溫度15℃、在升溫速度3℃/min下升溫至150℃,以頻率11Hz測定之值。 The storage elastic modulus at 150 ° C was increased to 150 ° C at a temperature of 3 ° C / min at an initial temperature of 15 ° C and a frequency of 15 ° C using a dynamic elastic modulus measurement device (manufactured by TA Instruments, model name "DMAQ800"). Value measured at 11 Hz.

高熱傳導部及低熱傳導部之配置以及該等之形狀均只要不損及目的性能則無特別限制。 The arrangement of the high heat conduction portion and the low heat conduction portion and the shape thereof are not particularly limited as long as the intended performance is not impaired.

前述基材之與接著劑接觸之面相反側之面(亦即低熱傳導部及高熱傳導部分別獨立構成基材之全部厚度時:圖1、圖2(a))中,高熱傳導部與低熱傳導部之階差較好為10μm以下,更好為5μm以下,進而更好為實質上不存在。 In the surface of the substrate opposite to the surface in contact with the adhesive (that is, when the low-heat-conducting portion and the high-heat-conducting portion separately constitute the entire thickness of the substrate: Figures 1, 2 (a)), the high-heat-conducting portion The step of the heat conduction portion is preferably 10 μm or less, more preferably 5 μm or less, and further preferably substantially non-existent.

高熱傳導部與低熱傳導部之任一者構成該基 材之厚度之一部分而成之例如圖2(b)、(c)時,高熱傳導部與低熱傳導部之階差較好為10μm以下,更好為5μm以下,進而更好為實質上不存在。再者,以高熱傳導部與低熱傳導部設定特定之階差之圖2(d)、(e)時,基材厚度為由高熱傳導部與低熱傳導部所成之厚度時之高熱傳導部與低熱傳導部之階差,相對於該基材厚度較好為10~90%。且,基材中,高熱傳導部與低熱傳導部之體積比率較好為10:90~90:10,更好為20:80~80:20,又更好為30:70~70:30。 Either a high heat conduction portion or a low heat conduction portion constitutes the base When part of the thickness of the material is used, for example, as shown in Figures 2 (b) and (c), the step difference between the high heat conduction part and the low heat conduction part is preferably 10 μm or less, more preferably 5 μm or less, and further preferably substantially non-existent. . In addition, in Fig. 2 (d) and (e), when a specific step difference is set between the high heat conducting portion and the low heat conducting portion, the thickness of the base material is the thickness between the high heat conducting portion and the low heat conducting portion and the high heat conducting portion and The step difference of the low heat conduction portion is preferably 10 to 90% with respect to the thickness of the substrate. And, in the base material, the volume ratio of the high heat conduction portion to the low heat conduction portion is preferably 10:90 to 90:10, more preferably 20:80 to 80:20, and still more preferably 30:70 to 70:30.

〈接著劑層〉 <Adhesive layer>

作為構成接著劑層之接著劑舉例為例如橡膠系接著劑、丙烯酸系接著劑、胺基甲酸酯系接著劑、聚矽氧系接著劑、烯烴系接著劑、環氧系接著劑等之習知接著劑。其中,基於絕緣性及耐熱性優異、熱傳導率高、散熱性優異之觀點,較好使用聚矽氧系接著劑。且,界由於基材上層合接著劑,於將該接著劑層貼附於熱電元件時,該基材與該熱電元件之絕緣性充分,故由於可於該基材之高熱傳導部含有可使高熱傳導部更高熱傳導率化之導電性高的金屬,故可更效率良好地賦予溫度差。 Examples of the adhesive constituting the adhesive layer include a rubber-based adhesive, an acrylic-based adhesive, a urethane-based adhesive, a polysiloxane-based adhesive, an olefin-based adhesive, and an epoxy-based adhesive. Know the adhesive. Among them, a polysiloxane adhesive is preferably used from the viewpoints of excellent insulation and heat resistance, high thermal conductivity, and excellent heat dissipation. In addition, since an adhesive is laminated on a substrate, when the adhesive layer is attached to a thermoelectric element, the substrate and the thermoelectric element are sufficiently insulated. Therefore, it may be contained in a high heat conduction portion of the substrate. The high thermal conductivity part has a higher thermal conductivity and is a highly conductive metal, so that a temperature difference can be provided more efficiently.

接著劑層中,在不損及本發明目的之範圍內,亦可添加例如黏著賦予劑、可塑劑、光聚合性化合物、光聚合起始劑、發泡劑、聚合抑制劑、抗老化劑、填充劑、偶合劑、抗靜電劑等之其他成分。 As long as the adhesive layer does not impair the object of the present invention, for example, an adhesion-imparting agent, a plasticizer, a photopolymerizable compound, a photopolymerization initiator, a foaming agent, a polymerization inhibitor, an anti-aging agent, Other ingredients such as fillers, coupling agents, antistatic agents.

接著劑層之厚度較好為1~200μm,更好為5~100μm。若為該範圍,則使用作為熱傳導性接著薄片時,不會對於散熱之控制性能帶來影響,故可使熱於特定方向選擇性散熱。且,於使用之電子裝置要求絕緣性時,可維持絕緣性。 The thickness of the adhesive layer is preferably 1 to 200 μm, and more preferably 5 to 100 μm. If it is within this range, when it is used as a thermally conductive adhesive sheet, it will not affect the control performance of heat radiation, so that heat can be selectively radiated in a specific direction. In addition, when the electronic device used requires insulation, the insulation can be maintained.

基於調整熱傳導性接著薄片之對散熱之控制性能、與黏著力之平衡之觀點,前述基材厚度與前述接著劑層之厚度之比率(接著劑層/基材)較好為0.005~1.0,更好為0.01~0.8,又更好為0.1~0.5。 From the viewpoint of adjusting the thermal conductivity of the adhesive sheet and the balance between the heat dissipation control performance and the adhesive force, the ratio of the thickness of the substrate to the thickness of the adhesive layer (adhesive layer / substrate) is preferably 0.005 to 1.0, more It is preferably 0.01 to 0.8, and more preferably 0.1 to 0.5.

〈剝離薄片〉 <Peeling Sheet>

熱傳導性接著薄片於接著劑層之表面亦可具有剝離薄片。剝離薄片列舉為例如,玻璃紙、塗覆紙、層合紙等之紙及於各種塑膠膜上塗佈聚矽氧樹脂、氟樹脂等之剝離劑而成者。該剝離薄片之厚度雖無特別限制,但通常為20~150μm。本發明中使用之剝離薄片所用之支撐基材較好使用塑膠膜。 The thermally conductive adhesive sheet may have a release sheet on the surface of the adhesive layer. Examples of the release sheet include papers such as cellophane, coated paper, and laminated paper, and those obtained by applying a release agent such as silicone resin or fluororesin to various plastic films. Although the thickness of the release sheet is not particularly limited, it is usually 20 to 150 μm. As the supporting substrate for the release sheet used in the present invention, a plastic film is preferably used.

<電子裝置> <Electronic device>

層合本發明之熱傳導性接著薄片之電子裝置雖無特別限制,但就散熱等之熱控制之觀點,列舉為電熱轉換裝置、光電轉換裝置、大規模積體電路等半導體裝置等。尤其,熱傳導性接著薄片層合於熱電轉換裝置之熱電轉換模組時,可使熱朝特定方向選擇性散熱,結果由於與熱電性 能之提高,故較好使用於熱電轉換裝置。 Although the electronic device in which the thermally conductive adhesive sheet of the present invention is laminated is not particularly limited, from the viewpoint of thermal control such as heat dissipation, semiconductor devices such as electrothermal conversion devices, photoelectric conversion devices, and large-scale integrated circuits are listed. In particular, when the thermal conductivity is laminated on the thermoelectric conversion module of the thermoelectric conversion device, the heat can be selectively radiated in a specific direction. It can be improved, so it is better used in thermoelectric conversion devices.

又,熱傳導性接著薄片可層合於電子裝置之單面,亦可層合於兩面。可配合電子裝置之規格適當選擇。 The thermally conductive adhesive sheet may be laminated on one side of the electronic device, or may be laminated on both sides. Can be appropriately selected according to the specifications of the electronic device.

以下,列舉熱電轉換裝置之情況作為電子裝置加以說明。 Hereinafter, the case of a thermoelectric conversion device will be described as an electronic device.

(熱電轉換裝置) (Thermoelectric conversion device)

熱電轉換裝置為對進行熱與電之相互能量轉換之熱電轉換元件之內部賦予溫度差而獲得電力之電子裝置。 A thermoelectric conversion device is an electronic device that obtains electricity by applying a temperature difference to the inside of a thermoelectric conversion element that performs mutual energy conversion between heat and electricity.

圖3為顯示本發明之熱傳導性接著薄片層合於熱電轉換模組時之熱電轉換裝置之一例之剖面圖。圖3所示之熱電轉換裝置10係由下列所構成:於支撐體上(未圖示)具有由P型材料所成之薄膜的P型熱電元件11、由N型材料所成之薄膜的N型熱電元件12構成之熱電轉換元件,進而設置電極13而成之熱電轉換模組16;層合於熱電轉換模組16之第一面17上之熱傳導性接著薄片1A;進而層合於與前述第一面17相反側之第2面18上之熱傳導性接著薄膜1B。 FIG. 3 is a cross-sectional view showing an example of a thermoelectric conversion device in which the thermal conductivity of the present invention and a sheet are laminated on a thermoelectric conversion module. The thermoelectric conversion device 10 shown in FIG. 3 is composed of a P-type thermoelectric element 11 having a thin film made of a P-type material on a support (not shown), and N of a thin film made of an N-type material. A thermoelectric conversion element composed of a type thermoelectric element 12 and a thermoelectric conversion module 16 provided with electrodes 13; a thermally conductive adhesive layer 1A laminated on the first surface 17 of the thermoelectric conversion module 16; and further laminated with the foregoing The thermally conductive adhesive film 1B on the second surface 18 opposite to the first surface 17.

熱傳導性接著薄片1A包含含高熱傳導部14a、14b與低熱傳導部15a、15b、15c之基材,與該於該基材之一面上層合之接著劑層,又熱傳導性接著薄片1B包含含高熱傳導部14’a、14’b、14’c與低熱傳導部15’a、15’b之基材,與於該基材之一面上層合之接著劑層20。 The thermally conductive adhesive sheet 1A includes a substrate containing high thermally conductive portions 14a, 14b and low thermally conductive portions 15a, 15b, 15c, and an adhesive layer laminated on one surface of the substrate, and the thermally conductive adhesive sheet 1B includes high The substrates of the thermally conductive portions 14'a, 14'b, and 14'c and the low thermally conductive portions 15'a and 15'b are bonded to the adhesive layer 20 on one surface of the substrate.

圖4顯示將本發明之熱傳導性接著薄片與熱 電轉換模組分解成各構成要素之立體圖之一例。圖4中,(a)為設置於熱電轉換模組之支撐體19之表面側之熱電元件上之熱傳導性接著薄片1A之立體圖,(b)為熱電轉換模子16之立體圖,(c)為設置於熱電轉換模組之支撐體19之背面側之熱傳導性接著薄片1B之立體圖。 Figure 4 shows the thermal conductivity of the invention An example of a perspective view of the electric conversion module broken down into its constituent elements. In FIG. 4, (a) is a perspective view of the thermal conductivity of the thermoelectric element provided on the surface side of the support body 19 of the thermoelectric conversion module and the sheet 1A, (b) is a perspective view of the thermoelectric conversion mold 16, and (c) is a set The thermal conductivity on the back side of the support body 19 of the thermoelectric conversion module is a perspective view of the sheet 1B.

藉由成為如上述之構成,可使熱自熱傳導性接著薄片1A及熱傳導性接著薄片1B效率良好地擴散。又,以使熱傳導性接著薄片1A之高熱傳導部14a、14b,與熱傳導性接著薄片1B之高熱傳導部14’a、14’b、14’c不對向之方式,錯開位置進行層合,而可使熱朝特定之方向選擇性散熱。藉此,可對熱電轉換模組效率良好地賦予溫度差,獲得發電效率高的熱電轉換裝置。 With such a configuration, the thermally self-conductive adhesive sheet 1A and the thermally conductive adhesive sheet 1B can be efficiently diffused. In addition, the thermally conductive adhesive sheet 1A is laminated so that the high thermally conductive portions 14a and 14b of the thermally conductive adhesive sheet 1A are not aligned with the high thermally conductive portions 14'a, 14'b, and 14'c of the thermally conductive adhesive sheet 1B. The heat can be selectively radiated in a specific direction. Thereby, a temperature difference can be efficiently provided to a thermoelectric conversion module, and a thermoelectric conversion device with high power generation efficiency can be obtained.

又,透過接著劑層20,藉由提高熱傳導性接著薄片1A、熱傳導性接著薄片1B之接著力,可接著於熱電轉換模組16之第一面17與第二面18。 In addition, through the adhesive layer 20, the first surface 17 and the second surface 18 of the thermoelectric conversion module 16 can be adhered by increasing the adhesive force of the thermal conductive adhesive sheet 1A and the thermal conductive adhesive sheet 1B.

本發明所使用之熱電轉換模組16係例如如圖4(b)所示,於支撐體19上,由P型熱電元件11與N型熱電元件12與電極13構成。P型熱電元件11與N型熱電元件12係以串聯連接之方式形成為薄膜狀,在各自之端部透過電極13接合而電性連接。又,熱電轉換模組16中之P型熱電元件11與N型熱電元件12係如圖3所示,可如「電極13、P型熱電元件11、電極13、N型熱電元件12、電極13、......」般配置,亦可如「電極13、P型熱電元件11、N型熱電元件12、電極13、P型熱電元件 11、N型熱電元件12、電極13、......」般配置,另外亦可如「電極13、P型熱電元件11、N型熱電元件12、P型熱電元件11、N型熱電元件12、...電極13」般配置。 The thermoelectric conversion module 16 used in the present invention is, for example, as shown in FIG. 4 (b), on a support 19, it is composed of a P-type thermoelectric element 11, an N-type thermoelectric element 12, and an electrode 13. The P-type thermoelectric element 11 and the N-type thermoelectric element 12 are formed in a thin film shape by being connected in series, and are electrically connected by being joined to each other through an electrode 13. In addition, the P-type thermoelectric element 11 and the N-type thermoelectric element 12 in the thermoelectric conversion module 16 are shown in FIG. 3, and may be, for example, "electrode 13, P-type thermoelectric element 11, electrode 13, N-type thermoelectric element 12, and electrode 13 , ... ", or" electrode 13, P-type thermoelectric element 11, N-type thermoelectric element 12, electrode 13, P-type thermoelectric element 11, N-type thermoelectric element 12, electrode 13, ... ", in addition, it can also be like" electrode 13, P-type thermoelectric element 11, N-type thermoelectric element 12, P-type thermoelectric element 11, N-type thermoelectric The elements 12, ... electrodes 13 "are arranged in the same manner.

前述熱電元件雖無特別限制,但在藉由熱電轉換模組轉換成電能之熱源溫度區域中,較好使用塞貝克(Seebeck)係數之絕對值較大,熱傳導率較低,導電率較高之所謂的熱電性能指數較高之材料。 Although the foregoing thermoelectric elements are not particularly limited, in the temperature range of the heat source converted into electric energy by the thermoelectric conversion module, it is better to use a larger absolute value of Seebeck coefficient, lower thermal conductivity and higher electrical conductivity. So-called materials with higher thermoelectric performance index.

構成P型熱電元件及N型熱電元件之材料只要是具有熱電轉換特性者即無特別限制,可使用碲化鉍(bismuth tellurides)、Bi2Te3等鉍-碲熱電半導體材料、GeTe、PbTe等碲化物系熱電半導體材料、銻-碲系熱電半導體材料、ZnSb、Zn3Sb2、Zn4Sb3等鋅-銻系熱電半導體材料、SiGe等矽-鍺系熱電半導體材料、Bi2Se3等硒化鉍系熱電半導體材料、β-FeSi2、CrSi2、MnSi1.73、Mg2Si等矽化物系熱電導體材料、氧化物系熱電半導體材料、FeVAl、FeVAlSi、FeVTiAl等豪斯勒(heusler)材料等。 The materials constituting the P-type thermoelectric element and the N-type thermoelectric element are not particularly limited as long as they have thermoelectric conversion characteristics. Bismuth tellurides, Bi 2 Te 3 and other bismuth-tellurium thermoelectric semiconductor materials, GeTe, PbTe, etc. can be used. Telluride-based thermoelectric semiconductor materials, antimony-tellurium-based thermoelectric semiconductor materials, zinc-antimony-based thermoelectric semiconductor materials such as ZnSb, Zn 3 Sb 2 and Zn 4 Sb 3 , silicon-germanium-based thermoelectric semiconductor materials such as SiGe, Bi 2 Se 3, etc. Biselenium-based thermoelectric semiconductor materials, β-FeSi 2 , CrSi 2 , MnSi 1.73 , Mg 2 Si and other silicide-based thermoelectric conductor materials, oxide-based thermoelectric semiconductor materials, FeVAl, FeVAlSi, FeVTiAl and other Heusler materials Wait.

P型熱電元件11及N型熱電元件12之厚度較好為0.1~100μm,更好為1~50μm。 The thickness of the P-type thermoelectric element 11 and the N-type thermoelectric element 12 is preferably 0.1 to 100 μm, and more preferably 1 to 50 μm.

又,P型熱電元件11與N型熱電元件12之厚度並無特別限制,可為相同厚度,亦可為不同厚度。 In addition, the thicknesses of the P-type thermoelectric element 11 and the N-type thermoelectric element 12 are not particularly limited, and may be the same thickness or different thicknesses.

[熱傳導性接著薄片之製造方法] [Method for manufacturing thermally conductive adhesive sheet]

本發明之熱傳導性接著薄片之製造方法係製造由包含高熱傳導部與低熱傳導部之基材與接著劑層構成,於該基 材之一面層合接著劑層,且該基材之另一面以該低熱傳導部之與接著劑層接觸之面相反側之面、與該熱高傳導部之與該接著劑接觸之面相反側之面構成,或該高熱傳導部與該低熱傳導部之至少任一者構成該基材之厚度之一部分而成之熱傳導性接著薄片之方法,其特徵為包含於可剝離之支撐基材上,自由樹脂組成物形成之高熱傳導部、與由樹脂組成物形成之低熱傳導部形成基材,及於該基材層合接著劑層之步驟。 The method for producing a thermally conductive adhesive sheet according to the present invention is to produce a base material and an adhesive layer including a high heat conductive portion and a low heat conductive portion. One side of the substrate is laminated with an adhesive layer, and the other side of the substrate is the side opposite to the surface of the low heat conductive portion that is in contact with the adhesive layer, and the side opposite to the surface of the high heat conductive portion that is in contact with the adhesive. A method for forming a thermally conductive adhesive sheet formed by a surface structure, or at least one of the high heat conductive portion and the low heat conductive portion constituting a part of the thickness of the base material, which is characterized by being contained on a peelable support base material, And a step of forming a base material with a high heat conduction portion formed of a resin composition, a base material with a low heat conduction portion formed of a resin composition, and laminating an adhesive layer on the base material.

〈基材形成步驟〉 <Substrate formation step>

係於可剝離之支撐基材上形成包含高熱傳導部及低熱傳導部之基材之步驟。 It is a step of forming a substrate including a high thermal conductivity portion and a low thermal conductivity portion on a peelable support substrate.

(支撐基材) (Supporting substrate)

作為可剝離之支撐基材,可使用與前述熱傳導性接著片之接著劑表面所具有之剝離薄片相同者,列舉為玻璃紙、塗覆紙、層合紙等之紙及於各種塑膠膜。其中,以塗佈聚矽氧樹脂、氟樹脂等之剝離劑而成之塑膠膜較佳。 As the peelable support substrate, the same as the release sheet on the surface of the adhesive of the aforementioned thermally conductive adhesive sheet can be used. Examples include paper of cellophane, coated paper, laminated paper, and various plastic films. Among them, a plastic film formed by coating a release agent such as a silicone resin or a fluororesin is preferred.

該剝離劑之塗佈可使用習知之方法。 The release agent can be applied by a conventional method.

〈高熱傳導部形成步驟〉 <Procedure for Forming High Heat Conduction Portion>

係形成高熱傳導部之步驟。高熱傳導部係使用樹脂組成物於支撐基材上、或於支撐基材上及低熱傳導部上形成。樹脂組成物之塗佈方法並無特別限制,只要利用例如 模板(stencil)印刷法、佈膠法、網版印刷法、輥塗法、狹縫式模嘴(slot die)等習知之方法形成即可。 It is a step of forming a high heat conduction portion. The high heat-conducting portion is formed on the supporting base material using a resin composition, or on the supporting base material and the low heat-conducting portion. The coating method of the resin composition is not particularly limited as long as it uses, for example, A conventional method such as a stencil printing method, a glue application method, a screen printing method, a roll coating method, and a slot die may be formed.

本發明所用之接著性樹脂組成物中,使用熱硬化型之接著性樹脂時之硬化條件雖依據使用之組成物適當調整,但較好為80℃~150℃,更好為90℃~120℃。且,亦可視需要邊加壓邊進行硬化。 In the adhesive resin composition used in the present invention, although the curing conditions when using a thermosetting adhesive resin are appropriately adjusted depending on the composition used, it is preferably 80 ° C to 150 ° C, and more preferably 90 ° C to 120 ° C. . Moreover, hardening may be performed under pressure as needed.

又,使用光硬化性樹脂時,可使用例如低壓水銀燈、中壓水銀燈、高壓水銀燈、超高壓水銀燈、碳弧燈、金屬鹵素燈、氙氣燈等,利用紫外線硬化。光量通常為100~1500mJ/cm2When a photocurable resin is used, for example, a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a carbon arc lamp, a metal halide lamp, a xenon lamp, and the like can be used for curing by ultraviolet rays. The amount of light is usually 100 ~ 1500mJ / cm 2 .

〈低熱傳導部形成步驟〉 <Steps of Forming Low Thermal Conduction Portion>

係形成低熱傳導部之步驟。低熱傳導部係使用含前述樹脂與中空填料之前述樹脂組成物,於支撐基材上、或於支撐基材上及高熱傳導部上形成。樹脂組成物之塗佈方法並無特別限制,與高熱傳導部同樣,只要利用例如模板印刷法、佈膠法、網版印刷法、輥塗法、狹縫式模嘴等習知方法形成即可。且,關於硬化方法也與高熱傳導部之硬化方法同樣。 It is a step of forming a low heat conduction portion. The low-heat-conducting portion is formed on the supporting base material, or on the supporting base material and the high-heat-conducting portion using the aforementioned resin composition containing the aforementioned resin and hollow filler. The coating method of the resin composition is not particularly limited, and it may be formed by a conventional method such as a stencil printing method, a glue-bonding method, a screen printing method, a roll coating method, a slit die, and the like, as in the case of the high heat conduction portion. . The hardening method is also the same as the hardening method of the high heat conduction portion.

又,高熱傳導部及低熱傳導部之形成順序並無特別限制。只要依據電子裝置之規格適當選擇即可。 There is no particular limitation on the order of forming the high heat conduction portion and the low heat conduction portion. It only needs to be appropriately selected according to the specifications of the electronic device.

〈接著劑層合步驟〉 <Adhesive Laminating Step>

係於前述基材形成步驟中獲得之基材上層合接著劑層 之步驟。 Laminating an adhesive layer on the substrate obtained in the aforementioned substrate forming step The steps.

接著劑之形成可使用習知方法進行,可直接形成於基材上,亦可將於預先於剝離薄片上形成之接著劑層貼合於前述基材上,將接著劑層轉印於基材上而形成。 The formation of the adhesive can be performed using a conventional method, can be directly formed on the substrate, or an adhesive layer formed in advance on the release sheet can be bonded to the aforementioned substrate, and the adhesive layer can be transferred to the substrate. On the top.

依據本發明之製造方法,可藉簡便方法將電子裝置等之內部中之熱逸出或熱流控制於特定方向,且抑制硬化收縮而可製造尺寸精度高之熱傳導性接著薄片。 According to the manufacturing method of the present invention, it is possible to control the heat escape or heat flow in the interior of the electronic device and the like in a specific direction by a simple method, and to suppress the hardening shrinkage, so that a thermally conductive adhesive sheet with high dimensional accuracy can be manufactured.

實施例 Examples

接著,以實施例更詳細說明本發明,但本發明並不受限於該等例。 Next, the present invention will be described in more detail with examples, but the present invention is not limited to these examples.

實施例、比較例中製作之熱傳導性薄片(層合接著劑層前)之複合硬化收縮率、高熱傳導部及低熱傳導部之熱傳導率測定、溫度差之評價及電子裝置之評價係藉以下方法進行。 The composite hardening shrinkage of the thermally conductive sheet (before laminating the adhesive layer) produced in the examples and comparative examples, the measurement of the thermal conductivity of the high and low thermally conductive parts, the evaluation of the temperature difference, and the evaluation of the electronic device are as follows get on.

(a)熱傳導性接著薄片之複合硬化收縮率測定 (a) Measurement of the composite hardening shrinkage of thermally conductive adhesive sheet

複合硬化收縮率係藉數位式萬用錶(日本光器公司製,NRM-S3-XY型)測定附剝離支撐基材之由高熱傳導部形成用樹脂組成物形成之條狀圖型,與由低熱傳導部形成用樹脂組成物形成之條狀圖型複合而成之條狀圖型群(100mm×100mm,厚度100μm;但包含熱傳導性接著薄片之厚度之構成不同,條狀圖型為高熱傳導部、或低熱傳導部之僅至少任一者之情況)之間距方向之總寬度之硬化 (硬化條件:隨使用之樹脂組成物而異但以最適硬化條件進行者)前後之尺寸變化,並由下述式算出。 The composite hardening shrinkage is measured by a digital multimeter (manufactured by Nippon Kogyo Co., Ltd., NRM-S3-XY type) with a strip pattern made of a resin composition for forming a high heat conduction part with a peeling support substrate, and a low heat conduction A strip pattern group (100 mm × 100 mm, thickness 100 μm) formed by compounding strip patterns formed by a resin composition for the part formation, but the composition including the thermal conductivity and the thickness of the sheet is different. The strip pattern is a high thermal conductivity part, (Or at least one of the cases of low thermal conductivity) Hardening of the total width in the distance direction (Hardening conditions: Depends on the resin composition used but is performed under optimal curing conditions.) The dimensional change before and after is calculated by the following formula.

複合硬化收縮率(%)=[(硬化前條狀圖型間距方向總寬-硬化後條狀圖型間距方向總寬)/硬化前條狀圖型間距方向總寬]×100 Composite hardening shrinkage (%) = [(total width of bar pattern pitch before hardening-total width of bar pattern pitch after hardening) / total width of bar pattern pitch before hardening] × 100

又,條狀圖型之規格係如前述,硬化後之尺寸測定法中,為了避免可剝離之支撐基材抑制硬化物之收縮,而無可剝離之支撐基材,亦即,自可剝離之支撐基材剝離之狀態(但,硬化物係靜置於例如不妨礙應力緩和之玻璃基板等平面上)對硬化物進行硬化後之應力緩和。 In addition, the specifications of the bar graph are as described above. In the dimensional measurement method after hardening, in order to avoid the peelable support substrate to suppress the shrinkage of the hardened material, there is no peelable support substrate, that is, the self-peelable The support substrate is peeled off (however, the cured product is placed on a flat surface such as a glass substrate that does not prevent stress relaxation), and the cured product is relieved from the stress.

(b)高熱傳導部及低熱傳導部之熱傳導率測定 (b) Measurement of the thermal conductivity of the high heat conduction section and the low heat conduction section

使用熱傳導率測定裝置(EKO公司製,HC-110)測定高熱傳導部及低熱傳導部各部之熱傳導率。 The thermal conductivity of each of the high thermal conductivity portion and the low thermal conductivity portion was measured using a thermal conductivity measuring device (HC-110, manufactured by EKO Corporation).

(c)高熱傳導部及低熱傳導部之溫度測定 (c) Temperature measurement of high heat conduction part and low heat conduction part

如圖5所示般將所得熱傳導性接著薄片剝離露出且貼合於由鈉玻璃(soda glass)(大小為50mm×50mm,厚度0.5mm)所成之被黏著體2之上表面後,將另一側之可剝離支撐基材剝離。接著,在75℃下加熱被黏著體2之下表面1小時使溫度安定後,以貼附於被黏著體2上表面之 K熱電偶(chromel-alumel,鎳鉻鎳鋁熱電偶)測定被黏著體之溫度。又,熱電偶係設置於對應於高熱傳導部及低熱傳導部之部分的被黏著體上(測定部位:圖5中,溫度差測定部6;A、B、C、D),每1秒測定熱電偶之溫度5分鐘,算出所得各點之平均值。 As shown in FIG. 5, the obtained thermally conductive adhesive sheet was peeled and exposed, and adhered to the upper surface of the adherend 2 made of soda glass (50 mm × 50 mm in thickness and 0.5 mm in thickness), and then another The peelable support substrate on one side is peeled off. Next, the lower surface of the adherend 2 was heated at 75 ° C. for 1 hour to stabilize the temperature, and then adhered to the upper surface of the adherend 2. K thermocouple (chromel-alumel, nickel-chromium-aluminum thermocouple) measures the temperature of the adherend. In addition, the thermocouple is provided on the adherend corresponding to a portion corresponding to the high heat conduction portion and the low heat conduction portion (measurement portion: temperature difference measurement portion 6; A, B, C, and D in FIG. 5), and is measured every 1 second. The temperature of the thermocouple was 5 minutes, and the average value of the obtained points was calculated.

(熱電轉換模組之製作) (Manufacture of thermoelectric conversion module)

如圖6之一部分所示,將P型熱電元件31(P型之鉍-碲系熱電半導體材料)與N型熱電元件32(N型之鉍-碲系熱電半導體材料)以各相同尺寸(寬1.7mm×長100mm,厚度0.5mm)之方式配置於支撐體36上,且在兩熱電元件、及熱電元件間設置銅電極(銅電極33a:寬0.15mm×長100mm,厚度0.5mm;銅電極33b:寬0.3mm×長100mm,厚度0.5mm;銅電極33c:寬0.15mm×長100mm,厚度0.5mm),製作熱電轉換模組37。 As shown in a part of FIG. 6, the P-type thermoelectric element 31 (P-type bismuth-tellurium-based thermoelectric semiconductor material) and the N-type thermoelectric element 32 (N-type bismuth-tellurium-based thermoelectric semiconductor material) are each of the same size (wide 1.7mm × length 100mm, thickness 0.5mm) is arranged on the support 36, and a copper electrode (copper electrode 33a: width 0.15mm × length 100mm, thickness 0.5mm) is provided between the two thermoelectric elements and the thermoelectric element; the copper electrode 33b: width 0.3mm × length 100mm, thickness 0.5mm; copper electrode 33c: width 0.15mm × length 100mm, thickness 0.5mm), a thermoelectric conversion module 37 is produced.

(電子裝置評價) (Electrical Device Evaluation)

以加熱板將實施例、比較例中獲得之熱電轉換裝置之下表面38(參照圖6)加熱至75℃,且將相反側之上表面39(參照圖6)冷卻至25℃之狀態下直接保持1小時,使溫度安定後,測定熱電動勢V(V)、電阻R(Ω)。輸出P(W)係使用測定之熱電動勢V與電阻R,由P=V2/R算出。 The lower surface 38 (see FIG. 6) of the thermoelectric conversion devices obtained in the examples and comparative examples was heated to 75 ° C. with the heating plate, and the upper surface 39 (see FIG. 6) on the opposite side was cooled to 25 ° C. After the temperature was maintained for 1 hour and the temperature was stabilized, the thermoelectromotive force V (V) and the resistance R (Ω) were measured. The output P (W) is calculated from P = V 2 / R using the measured thermoelectromotive force V and resistance R.

(實施例1) (Example 1) (1)熱傳導性接著薄片之製作 (1) Production of thermally conductive adhesive sheet

添加聚矽氧樹脂A(旭化成WACKER公司製,「SilGel612-A」)19.8質量份、聚矽氧樹脂B(旭化成WACKER公司製,「SilGel612-B」)19.8質量份、硬化延遲劑(旭化成WACKER公司製,「PT88」)0.4質量份、作為熱傳導性填料之氧化鋁(昭和電工公司製,「ALUNABEADS CB-A20S」,平均粒徑20μm)40質量份、氮化硼(昭和電工製造,「SHOB-N UHP-2」,平均粒徑12μm)20質量份,使用自轉.公轉混練機(THINKY公司製,「ARE-250」)混合分散,調製高熱傳導部形成用樹脂組成物。 Added 19.8 parts by mass of Polysiloxane A (made by Asahi Kasei WACKER Co., Ltd., "SilGel612-A"), 19.8 parts by mass of Polysiloxane Resin B (made by Asahi Kasei WACKER Co., Ltd., "SilGel612-B"), and a hardening retarder (Asahi Kasei WACKER Co., Ltd.) (PT88)) 0.4 parts by mass, 40 parts by mass of alumina (manufactured by Showa Denko Corporation, "ALUNABEADS CB-A20S", average particle diameter 20 µm) as a thermally conductive filler, boron nitride (manufactured by Showa Denko, "SHOB- "N UHP-2" (average particle size: 12 μm) 20 parts by mass, using rotation. A revolution kneader ("ARE-250" manufactured by THINKY) is mixed and dispersed to prepare a resin composition for forming a high heat conduction portion.

另一方面,添加聚矽氧樹脂A(旭化成WACKER公司製,「SilGel612-A」)31.7質量份、聚矽氧樹脂B(旭化成WACKER公司製,「SilGel 612-B」)31.7質量份、硬化延遲劑(旭化成WACKER公司製,「PT88」)0.6質量份、作為中空填料之玻璃中空填料(住友3M公司製造,「GLASS BUBBLES S38」,平均粒徑40μm,真密度0.38g/cm3)36質量份(低熱傳導部總體積中,含玻璃中空填料60體積%),使用自轉.公轉混練機(THINKY公司製,「ARE-250」)混合分散,調製低熱傳導部形成用樹脂組成物。 On the other hand, 31.7 parts by mass of polysiloxane resin A (Asahi Kasei WACKER Co., Ltd., "SilGel 612-A") and polysilicone resin B (Asahi Kasei WACKER Co., "SilGel 612-B") 31.7 parts by mass, hardening delay 0.6 mass parts of the additive (manufactured by Asahi Kasei WACKER Co., Ltd., "PT88"), 36 mass parts of glass hollow filler (manufactured by Sumitomo 3M, "GLASS BUBBLES S38", average particle diameter 40 μm, true density 0.38 g / cm 3 ) as a hollow filler (In the total volume of the low heat conduction part, containing 60% by volume of glass hollow filler), use rotation. A revolution kneading machine ("ARE-250" manufactured by THINKY) is mixed and dispersed to prepare a resin composition for forming a low heat conduction portion.

接著,使用佈膠機(武藏工程公司製,「ML- 808FXcom-CE」)將前述高熱傳導佈形成用樹脂組成物塗佈於可剝離支撐材((LINTEC公司製,PET50FD)之經剝離處理之面上,形成由條狀圖型(寬1mm×長100mm,厚度50μm,圖型中心距離2mm)所成之高熱傳導部34(參照圖6)。進而,使用敷料機自其上塗佈低熱傳導部形成用樹脂組成物,在150℃加熱30分鐘硬化,在該高熱傳導部之條狀圖型間形成與高熱傳導部相同厚度之低熱傳導部35(參照圖6),獲得熱傳導性接著薄片。又,高熱傳導部上確認未形成低熱傳導部。 Next, a rubber spreader (manufactured by Musashi Engineering Co., Ltd., "ML- 808FXcom-CE ") The resin composition for forming a high heat conductive cloth is coated on a peelable surface of a peelable support ((LINTEC, PET50FD)) to form a stripe pattern (width 1mm × length 100mm). (Thickness: 50 μm, pattern center distance: 2 mm), and a high heat conduction portion 34 (see FIG. 6). Further, a resin composition for forming a low heat conduction portion was coated thereon using an applicator, and cured by heating at 150 ° C for 30 minutes. A low-heat-conducting portion 35 (see FIG. 6) having the same thickness as the high-heat-conducting portion is formed between the strip patterns of the high-heat-conducting portion, and a thermally conductive adhesive sheet is obtained. It is confirmed that the low-heat-conducting portion is not formed on the high-heat-conducting portion.

另外,於剝離薄片((LINTEC公司製,PET50FD)之經剝離處理之面上塗佈聚矽氧系接著劑,在90℃乾燥1分鐘,形成厚度10μm之接著劑層。使接著劑與基材貼合,製作以剝離薄片及可剝離之支撐基材夾持而構成之熱傳導性接著薄片。於前述基材之與接著劑層接觸之面相反側之面中,實質上不存在高熱傳導部與低熱傳導部之階差。 In addition, a silicone adhesive was applied to the release-treated surface of a release sheet ((LINTEC Corporation, PET50FD)) and dried at 90 ° C for 1 minute to form an adhesive layer having a thickness of 10 μm . The adhesive and The substrates are bonded together to produce a thermally conductive adhesive sheet composed of a release sheet and a peelable support substrate sandwiched therebetween. On the surface of the substrate opposite to the surface in contact with the adhesive layer, there is substantially no high thermal conductivity. The difference between the low heat conduction part and the low heat conduction part.

高熱傳導部之150℃之儲存彈性率為2.3MPa,低熱傳導部之150℃之儲存彈性率為3.4MPa The storage elastic rate at 150 ° C of the high heat conduction section is 2.3 MPa, and the storage elastic rate at 150 ° C of the low heat conduction section is 3.4 MPa.

(2)熱電轉換裝置之製作 (2) Manufacturing of thermoelectric conversion device

準備2片所得熱傳導性接著薄片,將熱傳導性接著薄片分別層合於剝離薄片經去除剝離之熱傳導性接著薄片之熱電轉換模組37之形成熱電元件之側之面與支撐體側之面上,接著,剝離去除可剝離之支撐基材,製作於雙面層 合有熱傳導性接著薄片之熱電轉換裝置。 Two obtained thermally conductive adhesive sheets were prepared, and the thermally conductive adhesive sheets were separately laminated on the surface of the thermoelectric conversion module 37 on the side of the thermoelectric conversion module 37 where the release sheet was removed and peeled off, and the surface on the support side, Next, the peelable support substrate is peeled off to make a double-sided layer. A thermoelectric conversion device incorporating a thermally conductive adhesive sheet.

(實施例2) (Example 2)

除了使低熱傳導部形成用之接著性樹脂組成物設為聚矽氧樹脂A(旭化成WACKER公司製,「SilGel 612-A」)42.6質量份、聚矽氧樹脂B(旭化成WACKER公司製,「SilGel 612-B」)42.6質量份、硬化延遲劑(旭化成WACKER公司製,「PT88」)0.8質量份、作為中空填料之玻璃中空填料(住友3M公司製造,「GLASS BUBBLES S38」,平均粒徑40μm,真密度0.38g/cm3)14質量份(低熱傳導部總體積中,含玻璃中空填料30體積%)以外,餘與實施例1同樣,製作熱傳導性接著薄片、及熱電轉換裝置。 In addition to making the adhesive resin composition for forming a low heat conductive portion, 42.6 parts by mass of polysiloxane resin A (manufactured by Asahi Kasei WACKER Co., Ltd., "SilGel 612-A") and polysiloxane resin B (manufactured by Asahi Kasei WACKER Co., Ltd., "SilGel" 612-B ") 42.6 parts by mass, a hardening retarder (manufactured by Asahi Kasei WACKER Co., Ltd.," PT88 "), 0.8 parts by mass, and a glass hollow filler (manufactured by Sumitomo 3M," GLASS BUBBLES S38 ") with an average particle diameter of 40 μm, A true thermal conductivity adhesive sheet and a thermoelectric conversion device were produced in the same manner as in Example 1 except that the true density was 0.38 g / cm 3 ) and 14 parts by mass (the total volume of the low-heat-conducting portion contained 30% by volume of the glass hollow filler).

又,高熱傳導部硬化後於150℃之儲存彈性率為2.3MPa,低熱傳導部硬化後於150℃之儲存彈性率為0.2MPa。 In addition, the storage elastic modulus at 150 ° C after hardening of the high heat conduction portion was 2.3 MPa, and the storage elastic modulus at 150 ° C after hardening of the low heat conduction portion was 0.2 MPa.

(實施例3) (Example 3)

除使用聚醯亞胺之前驅物之聚醯胺酸溶液(日產化學工業股份有限公司製,SUNEVA 150)15質量份取代聚矽氧樹脂A、B作為樹脂以外,餘與實施例1同樣,製作熱傳導性接著薄片、及使用其之熱電轉換裝置。 The same procedure as in Example 1 was carried out except that 15 parts by mass of a polyamic acid solution (prepared by Nissan Chemical Industry Co., Ltd., SUNEVA 150) was used instead of the polysiloxane resins A and B as the resin. Thermally conductive adhesive sheet, and thermoelectric conversion device using the same.

高熱傳導部於150℃之儲存彈性率為4.1MPa,低熱傳導部於150℃之儲存彈性率為0.2MPa。 The storage elastic modulus of the high thermal conductivity portion at 150 ° C is 4.1 MPa, and the storage elastic modulus of the low thermal conductivity portion at 150 ° C is 0.2 MPa.

(實施例4) (Example 4)

高熱傳導部之形成中,除使用作為熱傳導率調整用物質之導電性碳化合物之碳奈米管(Nano-C公司製,SWCTN,平均粒徑0.9~1.3nm)40質量份取代氮化硼與氧化鋁製作基材之外,餘與實施例1同樣製作熱傳導性接著薄片、及使用其熱電轉換裝置。 In the formation of the high thermal conductivity portion, 40 mass parts of carbon nanotubes (SWCTN, manufactured by Nano-C Corporation, average particle diameter of 0.9 to 1.3 nm) were used instead of boron nitride and A thermally conductive adhesive sheet was produced in the same manner as in Example 1 except that the substrate was made of alumina, and a thermoelectric conversion device was used.

高熱傳導部於150℃之儲存彈性率為4.0MPa,低熱傳導部於150℃之儲存彈性率為0.2MPa。 The storage elastic modulus of the high thermal conductivity portion at 150 ° C is 4.0 MPa, and the storage elastic modulus of the low thermal conductivity portion at 150 ° C is 0.2 MPa.

(實施例5) (Example 5)

使用實施例3所用之前述高熱傳導部形成用之樹脂組成物,與實施例1同樣,於可剝離之支撐基材之經剝離處理之面上,形成由條狀圖型(寬1mm×長100mm,厚度50μm,圖型中心距離2mm)所成之高熱傳導部。 Using the aforementioned resin composition for forming a high heat-conducting portion used in Example 3, a strip-shaped pattern (width 1 mm × length 100 mm) was formed on the peeled surface of the peelable support substrate in the same manner as in Example 1. , Thickness 50μm, pattern center distance 2mm).

接著,於其上塗佈實施例3所用之低熱傳導部形成用之接著性樹脂組成物,在120℃乾燥1分鐘後,形成75μm厚之低熱傳導部,製作基材。係於該高熱傳導部之條狀圖型間形成厚度75μm之低熱傳導部,及該高熱傳導部上形成厚度25μm之低熱傳導部之構成。高熱傳導部與低熱傳導部之厚度差之絕對值為25μm。另外,與實施例1同樣層合接著劑層,製作如圖2(c)之所示之構成之熱傳導性接著薄片。又,前述基材之與接著劑層接觸之面相反側之面中,高熱傳導部與低熱傳導部之階差實質上不存 在。 Next, an adhesive resin composition for forming a low thermal conductivity portion used in Example 3 was applied thereon, and after drying at 120 ° C. for 1 minute, a low thermal conductivity portion having a thickness of 75 μm was formed to prepare a substrate. It is formed by forming a low heat conduction portion having a thickness of 75 μm between the strip patterns of the high heat conduction portion, and forming a low heat conduction portion having a thickness of 25 μm on the high heat conduction portion. The absolute value of the thickness difference between the high heat conduction portion and the low heat conduction portion was 25 μm. In addition, an adhesive layer was laminated in the same manner as in Example 1 to produce a thermally conductive adhesive sheet having a structure as shown in FIG. 2 (c). In the surface of the substrate opposite to the surface in contact with the adhesive layer, the step difference between the high heat conduction portion and the low heat conduction portion does not substantially exist. in.

使用所得之熱傳導性接著薄片,如實施例1般製作之熱電轉換裝置。 Using the obtained thermally conductive adhesive sheet, a thermoelectric conversion device manufactured as in Example 1 was used.

(實施例6) (Example 6)

自實施例5中獲得之基材剝離可剝離之支撐基材,使接著劑層與露出之面貼合,製作如圖2(f)之所示之構成之熱傳導性接著薄片。所得之熱傳導性接著薄片之與基材之接著劑層接觸之面相反側之面全部以低熱傳導部構成。使用所得之熱傳導性接著薄片,與實施例1同樣製作之熱電轉換裝置。 The peelable support substrate was peeled from the substrate obtained in Example 5, and the adhesive layer was bonded to the exposed surface to produce a thermally conductive adhesive sheet having a structure as shown in FIG. 2 (f). All the surfaces of the obtained thermally conductive adhesive sheet on the opposite side of the surface in contact with the adhesive layer of the base material were composed of low thermally conductive portions. Using the obtained thermally conductive adhesive sheet, a thermoelectric conversion device produced in the same manner as in Example 1.

(實施例7) (Example 7)

高熱傳導部與低熱傳導部之構成相反以外,餘與實施例5同樣,製作熱傳導性接著薄片。所得熱傳導性接著薄片之構成係圖2(b)所示之構成。 A heat conductive adhesive sheet was produced in the same manner as in Example 5 except that the configuration of the high heat conductive portion and the low heat conductive portion were reversed. The structure of the obtained thermally conductive adhesive sheet was the structure shown in FIG. 2 (b).

(實施例8) (Example 8)

高熱傳導部與低熱傳導部之構成相反以外,餘與實施例6同樣,製作熱傳導性接著薄片。所得熱傳導性接著薄片之構成係圖2(g)所示之構成。 A heat-conductive adhesive sheet was produced in the same manner as in Example 6 except that the configuration of the high-heat-conducting portion and the low-heat-conducting portion was reversed. The structure of the obtained thermally conductive adhesive sheet was the structure shown in FIG. 2 (g).

(實施例9) (Example 9)

使用實施例3中使用之前述高熱傳導部形成用之樹脂 組成物,與實施例1同樣,於可剝離之支撐基材之剝離處理面上形成由條狀圖型(寬1mm×長100mm,厚度50μm,圖型中心距離2mm)所成之高熱傳導部。 The resin for forming the high heat conduction part used in Example 3 was used The composition was formed in the same manner as in Example 1. On the release-treated surface of the peelable support substrate, a high heat conduction portion formed by a stripe pattern (width 1 mm × length 100 mm, thickness 50 μm, and pattern center distance 2 mm) was formed.

接著,於可剝離之支撐基材之剝離處理面上塗佈實施例3中使用之前述低熱傳導部形成用之樹脂組成物,且在120℃乾燥1分鐘,形成25μm之低熱傳導部。 Next, the resin composition for forming the low-thermal-conduction part used in Example 3 was coated on the release-treated surface of the peelable support substrate, and dried at 120 ° C. for 1 minute to form a low-heat-conducting part of 25 μm.

接著,貼合低熱傳導部與高熱傳導部製作基材。所得基材為於厚度25μm之低熱傳導部上層合厚度50μm之條狀圖型之高熱傳導部之構成。另外,與實施例1同樣層合接著劑層,製作如圖2(e)之所示之構成之熱傳導性接著薄片。 Next, a base material is produced by bonding the low heat conductive portion and the high heat conductive portion. The obtained substrate had a structure in which a strip-shaped high-heat-conducting portion having a thickness of 50 μm was laminated on a low-heat-conducting portion having a thickness of 25 μm. In addition, an adhesive layer was laminated in the same manner as in Example 1 to produce a thermally conductive adhesive sheet having a structure as shown in FIG. 2 (e).

(實施例10) (Example 10)

除高熱傳導部與低熱傳導部之構成相反以外,餘與實施例9同樣,製作熱傳導性接著薄片。所得熱傳導性接著薄片之構成係圖2(d)所示之構成。 A heat-conductive adhesive sheet was produced in the same manner as in Example 9 except that the configuration of the high-heat-conducting portion and the low-heat-conducting portion was reversed. The structure of the obtained thermally conductive adhesive sheet was the structure shown in FIG. 2 (d).

(實施例11) (Example 11)

除了使用二氧化矽中空填料的中空奈米二氧化矽(日本擴業股份有限公司製,「SILINAX」(註冊商標),平均粒徑105nm,真密度0.57g/cm3)作為中空填料以外,餘與實施例1同樣製作熱電轉換裝置。 Except for hollow nano-silicon dioxide ("SILINAX" (registered trademark), manufactured by Nippon Kogyo Co., Ltd., with an average particle diameter of 105 nm and a true density of 0.57 g / cm 3 ) using a hollow silica filler, the rest A thermoelectric conversion device was produced in the same manner as in Example 1.

(比較例1) (Comparative example 1)

除了低熱傳導部中未添加中空填料以外,餘與實施例1同樣製作熱傳導性接著薄片,及使用其製作熱電轉換裝置。 A thermally conductive adhesive sheet was produced in the same manner as in Example 1 except that a hollow filler was not added to the low heat conduction section, and a thermoelectric conversion device was produced using the same.

又,高熱傳導部硬化後於150℃之儲存彈性率為2.3MPa,低熱傳導部硬化後於150℃之儲存彈性率為0.2MPa。 In addition, the storage elastic modulus at 150 ° C after hardening of the high heat conduction portion was 2.3 MPa, and the storage elastic modulus at 150 ° C after hardening of the low heat conduction portion was 0.2 MPa.

(比較例2) (Comparative example 2)

以經黏著加工之PGS石墨薄片(Panasonic公司製,料號:EYGA091201M,PGS石墨薄片厚度:10μm,黏著劑厚度10μm,熱傳導率:1950(W/m.K)作為熱傳導性接著薄片。 Adhesive-processed PGS graphite flakes (manufactured by Panasonic Corporation, part number: EYGA091201M, PGS graphite flake thickness: 10 μm, adhesive thickness 10 μm, thermal conductivity: 1950 (W / m · K)) were used as thermal conductive adhesive sheets.

準備2片熱傳導性接著薄片,將熱傳導性接著薄片分別層合於熱電轉換模組37之形成熱電元件之側之面上與支撐體側之面上,製作於雙面層合熱傳導性接著薄片之熱電轉換裝置。 Two thermally conductive adhesive sheets were prepared, and the thermally conductive adhesive sheets were laminated on the surface of the thermoelectric conversion module 37 on the side where the thermoelectric elements are formed and on the side of the support, respectively, and fabricated on both sides of the thermally conductive adhesive sheet. Thermoelectric conversion device.

(比較例3) (Comparative example 3)

未於被黏著體上貼附熱傳導性接著薄片,進行溫度差之測定。又,未於熱電轉換模組37上層合熱傳導性接著薄片,進行電子裝置之評價。 The thermally conductive adhesive sheet was not attached to the adherend, and the temperature difference was measured. In addition, the thermal conductivity adhesive sheet was not laminated on the thermoelectric conversion module 37, and evaluation of the electronic device was performed.

實施例1~11及比較例1~3所得之熱傳導性接著薄片等之複合硬化收縮率、熱傳導率、溫度差及/或電子(熱電轉換)裝置之評價結果示於表1。又,比較例1 之電子裝置之評價結果成為0,認為是熱傳導性接著薄片與熱電轉換元件之貼附時之位置偏移較大(源自複合硬化收縮),而無法對熱電轉換元件賦予適度之溫度差者。 Table 1 shows the evaluation results of the composite hardening shrinkage, thermal conductivity, temperature difference, and / or electronic (thermoelectric conversion) device of the thermally conductive adhesive sheet and the thermal conductivity obtained in Examples 1 to 11 and Comparative Examples 1 to 3. Comparative Example 1 The evaluation result of the electronic device becomes 0, and it is considered that the thermal conductivity and the positional deviation of the sheet and the thermoelectric conversion element are large (derived from the composite hardening shrinkage), and the thermoelectric conversion element cannot be given a moderate temperature difference.

實施例1~11中使用之本發明之熱傳導性接著薄片相較於比較例1,可知複合硬化收縮率受抑制,尺寸精度提高,且實現熱傳導率之低熱傳導率化。且,可知高熱傳導部與鄰接之低熱傳導部間之溫度差增大。另外,在電子裝置評價中獲得高的輸出。 Compared with Comparative Example 1, the thermal conductivity adhesive sheet of the present invention used in Examples 1 to 11 shows that the composite hardening shrinkage is suppressed, the dimensional accuracy is improved, and the thermal conductivity is reduced. In addition, it can be seen that the temperature difference between the high heat conduction portion and the adjacent low heat conduction portion increases. In addition, a high output was obtained in the evaluation of the electronic device.

[產業上之可利用性] [Industrial availability]

本發明之熱傳導性接著薄片貼合於尤其是電子裝置之一的熱電轉換裝置之熱電轉換模組中時,對於熱電元件等可尺寸精度良好地貼附,且可使與高熱傳導部之熱傳導率差更大,故可效率良好地於熱電轉換元件之厚度方向賦予溫度差。因此,可進行發電效率高之發電,相較於過去之型態,可減少熱電轉換模組之設置數,與尺寸降低及成本下降有關。且同時,藉由使用本發明之熱傳導性接著薄片,作為可撓型之熱電轉換裝置,亦可無限制地使用於朝具有不平坦之面之廢熱源或散熱源上設置等之設置場所。 When the thermal conductivity of the present invention is adhered to a thermoelectric conversion module of a thermoelectric conversion device, which is one of electronic devices in particular, it can be attached to thermoelectric elements and the like with good dimensional accuracy, and the thermal conductivity with the high heat conduction portion can be achieved. Since the difference is larger, a temperature difference can be efficiently provided in the thickness direction of the thermoelectric conversion element. Therefore, it is possible to perform power generation with high power generation efficiency. Compared with the previous type, the number of thermoelectric conversion modules can be reduced, which is related to the reduction in size and cost. At the same time, by using the thermally conductive adhesive sheet of the present invention, as a flexible thermoelectric conversion device, it can also be used without limitation in a place where it is installed on a waste heat source or a heat radiation source having an uneven surface.

Claims (15)

一種熱傳導性接著薄片,其係含有包含高熱傳導部與低熱傳導部之基材、與接著劑層之熱傳導性接著薄片,其中,該低熱傳導部中,於低熱傳導部全部體積中含有20~90體積%之中空填料,又,於該基材之一面層合有接著劑層,且該基材之另一面,係以該低熱傳導部之與該接著劑層接觸之面相反側之面、與該高熱傳導部之與該接著劑層接觸之面相反側之面構成,或者該高熱傳導部與該低熱傳導部之至少任一者構成該基材之厚度的一部分而成。A thermally conductive adhesive sheet comprising a base material including a high thermally conductive part and a low thermally conductive part, and a thermally conductive adhesive sheet having an adhesive layer. The low thermally conductive part contains 20 to 90 in the entire volume of the low thermally conductive part. The vol% hollow filler is further laminated with an adhesive layer on one side of the substrate, and the other side of the substrate is a surface on the opposite side of the surface of the low-heat-conducting portion in contact with the adhesive layer, and The surface of the high heat conduction portion opposite to the surface in contact with the adhesive layer is formed, or at least one of the high heat conduction portion and the low heat conduction portion constitutes a part of the thickness of the substrate. 如請求項1之熱傳導性接著薄片,其中前述高熱傳導部與前述低熱傳導部,係各自獨立地構成前述基材之全部厚度。The sheet of thermal conductivity according to claim 1, wherein the high-heat-conducting portion and the low-heat-conducting portion independently constitute the entire thickness of the substrate. 如請求項1之熱傳導性接著薄片,其中前述高熱傳導部及前述低熱傳導部係由樹脂組成物形成。The heat conductive adhesive sheet according to claim 1, wherein the high heat conductive portion and the low heat conductive portion are formed of a resin composition. 如請求項3之熱傳導性接著薄片,其中構成前述高熱傳導部之前述樹脂組成物中,含有熱傳導性填料及/或導電性碳化合物。The heat conductive adhesive sheet according to claim 3, wherein the resin composition constituting the high heat conductive portion contains a heat conductive filler and / or a conductive carbon compound. 如請求項4之熱傳導性接著薄片,其中前述熱傳導性填料,係含有選自由金屬氧化物、金屬氮化物、及金屬所成群組之至少1種。The thermally conductive adhesive sheet according to claim 4, wherein the thermally conductive filler contains at least one selected from the group consisting of a metal oxide, a metal nitride, and a metal. 如請求項4之熱傳導性接著薄片,其中前述熱傳導性填料,係含有金屬氧化物與金屬氮化物。The thermally conductive adhesive sheet according to claim 4, wherein the thermally conductive filler contains a metal oxide and a metal nitride. 如請求項4之熱傳導性接著薄片,其中前述導電性碳化合物,係包含選自由碳黑、碳奈米管、石墨烯、及碳奈米纖維所成群組之至少1種。The thermally conductive adhesive sheet according to claim 4, wherein the conductive carbon compound includes at least one selected from the group consisting of carbon black, carbon nanotubes, graphene, and carbon nanofibers. 如請求項1之熱傳導性接著薄片,其中前述中空填料,為玻璃中空填料、或二氧化矽中空填料。The thermally conductive adhesive sheet according to claim 1, wherein the hollow filler is a glass hollow filler or a silicon dioxide hollow filler. 如請求項8之熱傳導性接著薄片,其中前述玻璃中空填料、及二氧化矽中空填料之真密度,為0.1~0.6g/cm3For example, the thermal conductivity adhesive sheet of claim 8, wherein the true density of the aforementioned glass hollow filler and silicon dioxide hollow filler is 0.1 to 0.6 g / cm 3 . 如請求項3~9中任一項之熱傳導性接著薄片,其中構成前述高熱傳導部之樹脂組成物與構成前述低熱傳導部之樹脂組成物的複合硬化收縮率,為2%以下。The thermally conductive adhesive sheet according to any one of claims 3 to 9, wherein the composite hardening shrinkage ratio of the resin composition constituting the high-heat-conducting portion and the resin composition constituting the low-heat-conducting portion is 2% or less. 如請求項1~9中任一項之熱傳導性接著薄片,其中前述基材之高熱傳導部的熱傳導率為0.5(W/m.K)以上、且低熱傳導部的熱傳導率為未達0.5(W/m.K)。The thermally conductive adhesive sheet according to any one of claims 1 to 9, wherein the thermal conductivity of the high thermal conductivity portion of the aforementioned substrate is 0.5 (W / m · K) or more, and the thermal conductivity of the low thermal conductivity portion is less than 0.5 ( W / m.K). 如請求項1~9中任一項之熱傳導性接著薄片,其中相對於前述基材之厚度而言,前述接著劑層之厚度的比率(接著劑層/基材),為0.005~1.0。The thermally conductive adhesive sheet according to any one of claims 1 to 9, wherein the ratio of the thickness of the adhesive layer (adhesive layer / substrate) to the thickness of the substrate is 0.005 to 1.0. 如請求項1~9中任一項之熱傳導性接著薄片,其中前述接著劑層係含有聚矽氧系接著劑。The thermally conductive adhesive sheet according to any one of claims 1 to 9, wherein the adhesive layer contains a polysiloxane adhesive. 一種電子裝置,其係層合有如請求項1~13中任一項之熱傳導性接著薄片。An electronic device in which a thermally conductive adhesive sheet according to any one of claims 1 to 13 is laminated. 一種熱傳導性接著薄片之製造方法,其係製造如請求項1~13中任一項之熱傳導性接著薄片之方法,其係包含於能夠剝離之支持基材上,自由樹脂組成物形成之高熱傳導部、與由樹脂組成物形成之低熱傳導部形成基材之步驟;及於該基材層合接著劑層之步驟。A method for producing a thermally conductive adhesive sheet, which is a method for producing the thermally conductive adhesive sheet according to any one of claims 1 to 13, which is contained on a support substrate that can be peeled off and has a high thermal conductivity formed by a free resin composition. A step of forming a base material with a low thermally conductive portion formed of a resin composition; and a step of laminating an adhesive layer on the base material.
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