TWI656340B - Automated decision-based energy-dispersive x-ray methodology and apparatus - Google Patents
Automated decision-based energy-dispersive x-ray methodology and apparatus Download PDFInfo
- Publication number
- TWI656340B TWI656340B TW104134805A TW104134805A TWI656340B TW I656340 B TWI656340 B TW I656340B TW 104134805 A TW104134805 A TW 104134805A TW 104134805 A TW104134805 A TW 104134805A TW I656340 B TWI656340 B TW I656340B
- Authority
- TW
- Taiwan
- Prior art keywords
- defect
- site
- defects
- edx
- electron beam
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 51
- 230000007547 defect Effects 0.000 claims abstract description 257
- 238000001514 detection method Methods 0.000 claims abstract description 68
- 238000010894 electron beam technology Methods 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 230000002950 deficient Effects 0.000 claims abstract description 21
- 238000001228 spectrum Methods 0.000 claims description 36
- 239000002245 particle Substances 0.000 claims description 33
- 238000000724 energy-dispersive X-ray spectrum Methods 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 19
- 239000000428 dust Substances 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 14
- 230000000877 morphologic effect Effects 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims 2
- 238000009826 distribution Methods 0.000 claims 1
- 238000004091 panning Methods 0.000 claims 1
- 238000007689 inspection Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 10
- 238000013102 re-test Methods 0.000 description 10
- 238000001198 high resolution scanning electron microscopy Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000000635 electron micrograph Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 238000010410 dusting Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
- G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
- G01N23/083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/079—Investigating materials by wave or particle radiation secondary emission incident electron beam and measuring excited X-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2803—Scanning microscopes characterised by the imaging method
- H01J2237/2806—Secondary charged particle
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2803—Scanning microscopes characterised by the imaging method
- H01J2237/2807—X-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Toxicology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
一項實施例係關於一種用於自動再檢測在目標基板上之一有缺陷晶粒中偵測到之缺陷之方法。該方法包含:使用一次級電子顯微鏡(SEM)來執行該等缺陷之一自動再檢測,以便獲得該等缺陷之電子束影像;執行基於如自該等電子束影像確定之該等缺陷之形態來將該等缺陷分成若干類型之一自動分類;選擇一特定類型之缺陷,用於自動能量分散式x射線(EDX)再檢測;及對該特定類型之該等缺陷執行該自動EDX再檢測。另外,揭示用於獲得一準確參考以便改良EDX結果之有用性的自動技術。此外,揭示基於該等EDX結果來將該等缺陷分類之一自動方法,該自動方法提供組合形態資訊與元素資訊兩者之一最終帕累托(pareto)。亦揭示其他實施例、態樣及特徵。 One embodiment relates to a method for automatically redetecting defects detected in a defective die on a target substrate. The method comprises: performing a primary re-detection of one of the defects using a primary electron microscope (SEM) to obtain an electron beam image of the defects; performing a form based on the defects as determined from the electron beam images The defects are automatically classified into one of several types; a particular type of defect is selected for automatic energy dispersive x-ray (EDX) re-detection; and the automatic EDX re-detection is performed for the particular type of such defect. In addition, an automated technique for obtaining an accurate reference to improve the usefulness of EDX results is disclosed. In addition, an automatic method for classifying the defects based on the EDX results is disclosed, the automatic method providing one of the combined form information and element information, and finally a pareto. Other embodiments, aspects, and features are also disclosed.
Description
本專利申請案主張2014年10月27日提出申請之第62/069,048號美國臨時專利申請案之權益,該美國臨時專利申請案之揭示內容之全部內容據此以引用方式併入本文中。本專利申請案亦主張2015年5月8日提出申請之第62/159,180號美國臨時專利申請案之權益,該美國臨時專利申請案之揭示內容之全部內容據此以引用方式併入本文中。本專利申請案亦主張2015年6月5日提出申請之第62/171,698號美國臨時專利申請案之權益,該美國臨時專利申請案之揭示內容之全部內容據此以引用方式併入本文中。本專利申請案亦主張2015年8月12日提出申請之第62/204,325號美國臨時專利申請案之權益,該美國臨時專利申請案之揭示內容之全部內容據此以引用方式併入本文中。本專利申請案主張2015年6月19日提出申請之第3080/CHE/2015號印度專利申請案之優先權,該印度專利申請案之揭示內容之全部內容據此以引用方式併入本文中。 The present patent application claims the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the disclosure. This patent application also claims the benefit of U.S. Provisional Patent Application Serial No. Ser. This patent application also claims the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the disclosure. The present patent application also claims the benefit of US Provisional Patent Application Serial No. Serial No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. The present patent application claims priority to the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of
本發明係關於用於使用能量分散式x射線光譜學自動檢驗及再檢測諸如半導體晶圓之所製造基板之方法及裝置。 The present invention relates to methods and apparatus for automated inspection and re-detection of substrates such as semiconductor wafers using energy dispersive x-ray spectroscopy.
在一習用掃描電子顯微鏡(SEM)為基礎之檢驗儀器中,用產生自 基板表面之次級電子發射之一聚焦電子束來掃描一所製造基板(諸如一矽晶圓或一比例光罩(reticle))。偵測該等所發射電子,且通常將偵測資料轉換成試樣之表面之影像。然後對此等影像進行數值分析以偵測所製造基板中之異常情況(稱作缺陷)。隨後可藉由進一步成像再檢測所偵測到之缺陷。 Used in a scanning electron microscope (SEM)-based inspection instrument One of the secondary electron emission of the surface of the substrate focuses the electron beam to scan a fabricated substrate (such as a germanium wafer or a scale reticle). The emitted electrons are detected and the detected data is typically converted into an image of the surface of the sample. These images are then numerically analyzed to detect anomalies (referred to as defects) in the fabricated substrate. The detected defects can then be detected by further imaging.
亦可將該等所偵測到之缺陷手動或自動地分類成不同種類或類別。可使用對一缺陷之分類來確定其原因以使得在製造程序中可做出適當調整以便改良其良率。 The detected defects may also be manually or automatically classified into different categories or categories. The classification of a defect can be used to determine its cause so that appropriate adjustments can be made in the manufacturing process to improve its yield.
除產生次級電子之外,撞擊一SEM中之一樣本之一電子束亦產生係樣本之材料之特性之x射線。在能量分散式x射線(EDX)光譜學中,一固態偵測器定位為相對靠近於樣本以收集由於電子束之碰撞而自樣本放射之x射線。偵測器接收並偵測不同能量之x射線以便獲得所偵測到之x射線之一能量光譜。該能量光譜提供關於用電子輻射之材料之元素組成之資訊。 In addition to generating secondary electrons, an electron beam striking one of the samples in an SEM also produces x-rays characteristic of the material of the sample. In energy dispersive x-ray (EDX) spectroscopy, a solid state detector is positioned relatively close to the sample to collect x-rays emitted from the sample due to collision of electron beams. The detector receives and detects x-rays of different energies to obtain an energy spectrum of one of the detected x-rays. This energy spectrum provides information about the composition of the elements of the material that is irradiated with electrons.
一項實施例係關於一種用於自動再檢測在目標基板上之一有缺陷晶粒中偵測到之缺陷之方法。該方法包含:獲得包含該等缺陷之位置之一結果檔案;使用一次級電子顯微鏡(SEM)執行該等缺陷之一自動再檢測以便獲得該等缺陷之電子束影像;執行基於如自該等電子束影像確定的該等缺陷之形態而將該等缺陷分成若干類型之一自動分類;選擇一特定類型之缺陷以用於自動能量分散式x射線(EDX)再檢測;及對該特定類型之該等缺陷執行該自動EDX再檢測。 One embodiment relates to a method for automatically redetecting defects detected in a defective die on a target substrate. The method comprises: obtaining a result file of one of the locations including the defects; performing an automatic re-detection of one of the defects using a primary electron microscope (SEM) to obtain an electron beam image of the defects; performing the electron based on the electrons The image of the defects determined by the beam image and the defects are automatically classified into one of several types; a particular type of defect is selected for automatic energy dispersive x-ray (EDX) re-detection; and the particular type The automatic EDX retest is performed on the same defect.
另一實施例係關於一種用於自動再檢測在一目標基板上偵測到之缺陷之裝置。該裝置包含:一電子束柱,其用於產生一初級電子束且將該初級電子束聚焦至該目標基板之一表面上;一可移動載台,其用於將該目標基板固持在該初級電子束下面;一偏轉器,其用於使該 初級電子束偏轉;一電子偵測器,其用於偵測由於該初級電子束之碰撞而自該目標基板之該表面發射之次級電子;一x射線偵測器,經組態以偵測由於該初級電子束之碰撞而自該目標基板之該表面發射之x射線;及一控制系統,其包括用於儲存電腦可讀程式碼及資料之非暫態資料儲存器且進一步包括用於執行該電腦可讀程式碼之一處理器。該電腦可讀程式碼包括用以進行以下操作之指令:獲得一結果檔案,該結果檔案包含在該目標基板上之一有缺陷晶粒中偵測到之該等缺陷之位置;執行該等缺陷之一自動次級電子顯微鏡(SEM)再檢測以便獲得該等缺陷之電子束影像;執行基於如自該等電子束影像確定的該等缺陷之形態而將該等缺陷分成若干類型之一自動分類;選擇一特定類型之缺陷以用於自動能量分散式x射線(EDX)再檢測;及對該特定類型之該等缺陷執行該自動EDX再檢測。 Another embodiment is directed to an apparatus for automatically redetecting defects detected on a target substrate. The apparatus includes: an electron beam column for generating a primary electron beam and focusing the primary electron beam onto a surface of the target substrate; and a movable stage for holding the target substrate at the primary Under the electron beam; a deflector for making the Primary electron beam deflection; an electronic detector for detecting secondary electrons emitted from the surface of the target substrate due to collision of the primary electron beam; an x-ray detector configured to detect An x-ray emitted from the surface of the target substrate due to the collision of the primary electron beam; and a control system including a non-transitory data storage for storing computer readable code and data and further comprising One of the computer readable code processors. The computer readable program code includes instructions for: obtaining a result file comprising a location of the defects detected in a defective die on the target substrate; performing the defects Automated secondary electron microscopy (SEM) re-detection to obtain electron beam images of the defects; performing automatic classification of the defects into one of several types based on the morphology of the defects as determined from the electron beam images Selecting a particular type of defect for automatic energy dispersive x-ray (EDX) re-detection; and performing the automatic EDX re-detection for the particular type of such defect.
另一實施例係關於一種對一有缺陷晶粒上之缺陷進行自動能量分散式x射線(EDX)再檢測之方法。該方法在電腦可讀指令之控制下係自動的且包含:移動至一缺陷位點;自該缺陷位點獲得一EDX光譜;自該缺陷位點移動至一參考位點;自該參考位點獲得該EDX光譜;及自來自該缺陷位點之該EDX光譜及來自該參考位點之該EDX光譜產生一差光譜。 Another embodiment is directed to a method of automated energy dispersive x-ray (EDX) re-detection of defects on a defective die. The method is automated under the control of computer readable instructions and includes: moving to a defect site; obtaining an EDX spectrum from the defect site; moving from the defect site to a reference site; from the reference site Obtaining the EDX spectrum; and generating a difference spectrum from the EDX spectrum from the defect site and the EDX spectrum from the reference site.
在另一實施例中,對被指示為處於一重複單元陣列中之缺陷執行對一有缺陷晶粒上之缺陷進行自動能量分散式x射線(EDX)再檢測之該方法。在此情形中,藉由以下方式執行該自該缺陷位點移動至該參考位點:使一初級電子束沿一個方向偏轉一單元尺寸使得該參考位點處於一毗鄰單元中對應於該缺陷位點之一位置。 In another embodiment, the method of performing automatic energy dispersive x-ray (EDX) re-detection of defects on a defective die is performed on defects indicated as being in a repeating cell array. In this case, the movement from the defective site to the reference site is performed by deflecting a primary electron beam in a direction by a cell size such that the reference site is in an adjacent cell corresponding to the defect bit. One of the locations.
在另一實施例中,對被指示為處於一非陣列圖案化結構中之缺陷執行對一有缺陷晶粒上之缺陷進行自動能量分散式x射線(EDX)再檢測之該方法。在此情形中,藉由以下方式執行自該缺陷位點移動至 該參考位點:平移固持該目標基板之一載台以便使一掃描電子顯微鏡之一視域自該有缺陷晶粒上之該缺陷位點移動至該毗鄰晶粒上之該參考位點。 In another embodiment, the method of performing automatic energy dispersive x-ray (EDX) re-detection of defects on a defective die is performed on defects indicated as being in a non-array patterned structure. In this case, the movement from the defect site to the execution is performed in the following manner The reference site: translating and holding a carrier of the target substrate to move a field of view of a scanning electron microscope from the defect site on the defective die to the reference site on the adjacent die.
亦揭示其他實施例、態樣及特徵。 Other embodiments, aspects, and features are also disclosed.
402‧‧‧所關注缺陷 402‧‧‧ Concerned defects
404‧‧‧對應參考點 404‧‧‧corresponding reference point
901‧‧‧源 901‧‧‧ source
902‧‧‧入射電子束/初級電子束 902‧‧‧Incoming electron beam/primary electron beam
904‧‧‧維因濾波器 904‧‧‧Viine filter
906‧‧‧偏轉器 906‧‧‧ deflector
907‧‧‧聚焦透鏡 907‧‧ ‧focus lens
908‧‧‧物鏡/最終透鏡 908‧‧‧ Objective / Final Lens
910‧‧‧目標基板/基板樣本 910‧‧‧ Target substrate/substrate sample
912‧‧‧次級電子束/散射電子束 912‧‧‧Secondary electron beam/scattered electron beam
914‧‧‧次級電子偵測系統 914‧‧‧Secondary electronic detection system
919‧‧‧可平移載台 919‧‧‧Translatable stage
920‧‧‧能量分散式x射線偵測系統 920‧‧‧ Energy Dispersive X-ray Detection System
950‧‧‧儀器控制與資料處理系統/控制/處理系統 950‧‧‧Instrument Control and Data Processing System/Control/Processing System
952‧‧‧處理器/微處理器/微控制器 952‧‧‧Processor/Microprocessor/Microcontroller
954‧‧‧資料儲存器 954‧‧‧Data storage
955‧‧‧電腦可讀程式碼/電腦可讀指令/程式碼 955‧‧‧Computer readable code/computer readable instructions/code
956‧‧‧資料 956‧‧‧Information
957‧‧‧使用者介面 957‧‧‧User interface
958‧‧‧顯示系統 958‧‧‧Display system
圖1係根據本發明之一實施例之一自動判定為基礎之EDX方法之一流程圖。 1 is a flow chart of one of the EDX methods based on an automatic determination in accordance with an embodiment of the present invention.
圖2係根據本發明之一實施例之用於對所識別缺陷自動次取樣之一程序流程之一流程圖。 2 is a flow diagram of one of the program flows for automatically subsampling a identified defect in accordance with an embodiment of the present invention.
圖3係根據本發明之一實施例之用於以一陣列模式進行自動EDX再檢測之一程序流程之一流程圖。 3 is a flow diagram of one of the program flows for automatic EDX re-detection in an array mode in accordance with an embodiment of the present invention.
圖4展示根據本發明之一實施例之繪示一所關注缺陷(DOI)及一鄰近單元中之一對應參考點之一電子顯微照片。 4 shows an electron micrograph of a defect of interest (DOI) and one of a neighboring cell in a neighboring cell, in accordance with an embodiment of the invention.
圖5係根據本發明之一實施例之用於以一非陣列模式進行自動EDX再檢測之一程序流程之一流程圖。 5 is a flow diagram of one of the program flows for automatic EDX re-detection in a non-array mode, in accordance with an embodiment of the present invention.
圖6展示根據本發明之一實施例之繪示一所關注缺陷(DOI)及一參考晶粒上之一對應參考點之電子顯微照片。 6 shows an electron micrograph of a defect of interest (DOI) and a corresponding reference point on a reference die, in accordance with an embodiment of the present invention.
圖7係根據本發明之一實施例之用於組合形態缺陷結果與元素缺陷結果以獲得一最終帕累托之一自動程序之一流程圖。 7 is a flow diagram of one of an automated procedure for combining a morphological defect result with an element defect result to obtain a final Pareto, in accordance with an embodiment of the present invention.
圖8係根據本發明之一實施例之比較用於自動EDX再檢測之一現有程序與用於自動EDX再檢測之一發明程序之一圖式。 Figure 8 is a diagram of one of the inventive procedures for comparing one of the existing procedures for automatic EDX re-detection and for automatic EDX re-detection, in accordance with an embodiment of the present invention.
圖9係根據本發明之一實施例之具有一能量分散式x射線(EDX)偵測系統之一掃描電子顯微鏡裝置之一示意圖。 9 is a schematic illustration of one of the scanning electron microscope devices having an energy dispersive x-ray (EDX) detection system in accordance with an embodiment of the present invention.
圖1係根據本發明之一實施例之一自動判定為基礎之EDX方法100之一流程圖。可在藉由自動檢驗識別缺陷位置之後執行此方法100。 可由一相同或一單獨SEM裝置(舉例而言)執行此自動檢驗。正檢驗之目標基板可係(舉例而言)其上形成有多個晶粒之一矽晶圓。另一選擇係,該目標基板可係一比例遮罩。 1 is a flow diagram of an EDX method 100 based on an automatic determination in accordance with an embodiment of the present invention. This method 100 can be performed after identifying the defect location by automatic verification. This automatic inspection can be performed by an identical or a separate SEM device, for example. The target substrate being inspected may be, for example, one of a plurality of dies formed thereon. Alternatively, the target substrate can be a proportional mask.
參考步驟101,可執行所識別缺陷之SEM自動再檢測。該SEM自動再檢測可涉及在來自該自動檢驗之一結果檔案中所識別之缺陷之高解析度SEM成像。 Referring to step 101, SEM automatic re-detection of the identified defects can be performed. The SEM automatic retest can involve high resolution SEM imaging of defects identified in a result file from one of the automated tests.
參考步驟102,在SEM自動再檢測之後,可執行形態為基礎之自動分類。如在步驟102右邊之實例性條形圖中所繪示,可將缺陷分類成若干缺陷類型。該條形圖展示缺陷頻率對缺陷類型。繪示三個類型(#1、#2及#3),但類型之數目當然可為任一數目。舉例而言,一第一缺陷類型可係一孔,一第二缺陷類型可係一刮痕,且一第三缺陷類型可係一顆粒。此等僅係幾個實例性缺陷類型。當然,可利用其他及不同缺陷類型。舉例而言,替代具有一顆粒缺陷類型,可取決於顆粒之大小而存在一大顆粒缺陷類型及一小顆粒缺陷類型,或可取決於顆粒之形狀而存在一圓形顆粒缺陷類型及一非圓形顆粒缺陷類型。 Referring to step 102, after the SEM is automatically re-detected, the form-based automatic classification can be performed. As depicted in the example bar chart on the right side of step 102, the defects can be classified into a number of defect types. The bar graph shows the defect frequency versus defect type. Three types (#1, #2, and #3) are shown, but the number of types can of course be any number. For example, a first defect type can be a hole, a second defect type can be a scratch, and a third defect type can be a particle. These are just a few examples of defect types. Of course, other and different types of defects can be utilized. For example, instead of having a particle defect type, there may be a large particle defect type and a small particle defect type depending on the size of the particle, or a circular particle defect type and a non-circular may exist depending on the shape of the particle. Shape type of particle defect.
參考步驟104,做出對用於自動EDX再檢測之一(或多種)類型之缺陷之一選擇。對用於自動EDX再檢測之缺陷類型之選擇可經預程式化或預組態以便藉由執行自動判定為基礎之EDX方法100之可執行程式碼自動執行。如在步驟104右邊之實例性條形圖中所繪示,選定類型可係類型#3。舉例而言,類型#3可對應於與顆粒相關聯之一缺陷類型,其亦可稱作「墜塵(fall on)」缺陷。根據步驟104用於自動EDX再檢測之缺陷類型之此自動選擇在本文中可稱作自動(auto)次取樣。下文關於圖2提供對自動次取樣之進一步闡述。 Referring to step 104, one of the defects of one (or more) types for automatic EDX retesting is made. The selection of the type of defect for automatic EDX redetection can be pre-programmed or pre-configured to be automatically executed by executing the executable code of the EDX method 100 based on the automatic decision. As shown in the example bar chart on the right side of step 104, the selected type can be type #3. For example, type #3 may correspond to one type of defect associated with a particle, which may also be referred to as a "fall on" defect. This automatic selection of the type of defect for automatic EDX re-detection according to step 104 may be referred to herein as an automatic sub-sampling. Further explanation of automatic subsampling is provided below with respect to FIG.
在步驟104之自動次取樣之後,可對選定類型之缺陷執行具有準確參考資料之一自動EDX再檢測105。為獲得準確參考資料,自動EDX再檢測105可涉及針對選定類型之每一缺陷重複步驟106至116。 After the automatic subsampling of step 104, an automatic EDX redetection 105 with an accurate reference can be performed on the selected type of defect. To obtain an accurate reference, automatic EDX re-detection 105 may involve repeating steps 106-116 for each defect of the selected type.
參考步驟106,可執行至一缺陷位點之移動。可藉由以下方式實現至該缺陷位點之該移動:平移該載台使得該缺陷位點在SEM之視域內。可基於自SEM自動再檢測之所儲存結果獲得的缺陷位點之位置座標而執行此操作。 Referring to step 106, movement to a defect site can be performed. This movement to the defect site can be achieved by translating the stage such that the defect site is within the field of view of the SEM. This operation can be performed based on the position coordinates of the defect sites obtained from the stored results of the SEM automatic re-detection.
參考步驟108,自缺陷位點獲得一EDX光譜(缺陷光譜)。此操作可涉及:平移基板使得缺陷位點在SEM之視域中;及使初級電子束在缺陷位點上方掃描同時偵測藉此產生之x射線之能量光譜。來自每一缺陷位點之缺陷光譜可以一方式經儲存以便與缺陷位點之位置(座標)相關聯。 Referring to step 108, an EDX spectrum (defect spectrum) is obtained from the defect site. This operation may involve translating the substrate such that the defect site is in the field of view of the SEM; and scanning the primary electron beam over the defect site while detecting the energy spectrum of the x-rays thereby generated. The defect spectrum from each defect site can be stored in one manner to correlate with the location (coordinate) of the defect site.
參考步驟110,可執行自缺陷位點至與缺陷位點對應地對準之一參考位點的移動。如下文關於圖3進一步闡述,若缺陷位點被指示為處於一重複單元陣列中,則可藉由使初級電子束偏轉至一毗鄰單元中之一對應位置來實現至參考位點之移動。如下文關於圖5進一步闡述,若缺陷位點被指示為處於一非陣列圖案化結構中(亦即,圖案化結構並非一重複單元陣列),則可藉由將載台平移至目標基板上之一毗鄰晶粒上之一對應位置來實現至參考位點之移動。缺陷位點是在一陣列還是非陣列圖案化結構中的指示可由結果檔案中的資料提供。 Referring to step 110, movement from one of the defect sites to one of the reference sites corresponding to the defect site can be performed. As further explained below with respect to FIG. 3, if the defect site is indicated as being in a repeating cell array, movement to the reference site can be achieved by deflecting the primary electron beam to a corresponding position in an adjacent cell. As further explained below with respect to FIG. 5, if the defect site is indicated as being in a non-array patterned structure (ie, the patterned structure is not a repeating cell array), the stage can be translated onto the target substrate by The movement to the reference site is achieved by a corresponding position on one of the adjacent dies. The indication of whether the defect site is in an array or non-array patterned structure can be provided by the data in the resulting file.
參考步驟112,自參考位點獲得一EDX光譜(參考光譜)。此操作可涉及使初級電子束在參考位點上方掃描同時偵測藉此產生之x射線的能量光譜。參考光譜可以一方式被儲存,以便與對應缺陷位點相關聯。 Referring to step 112, an EDX spectrum (reference spectrum) is obtained from the reference site. This operation may involve scanning the primary electron beam over the reference site while detecting the energy spectrum of the x-rays thereby generated. The reference spectrum can be stored in a manner to be associated with a corresponding defect site.
參考步驟114,可產生一差光譜。在一項實施方案中,可執行缺陷光譜及一對應參考光譜之正規化,且可自正規化缺陷光譜減去正規化參考光譜以獲得差光譜。 Referring to step 114, a difference spectrum can be generated. In one embodiment, normalization of the defect spectrum and a corresponding reference spectrum can be performed, and the normalized reference spectrum can be subtracted from the normalized defect spectrum to obtain a difference spectrum.
參考步驟116,可自差光譜獲得缺陷之元素資訊。舉例而言,若選定缺陷類型係一顆粒類型,則元素資訊可指示顆粒之元素組成。有 利地,使用本文中所揭示之方法獲得的元素資訊比自一習用自動EDX再檢測程序獲得的元素資訊更準確。此乃因本文中所揭示之方法與先前方法相比較更準確地定位參考位點。 Referring to step 116, the element information of the defect can be obtained from the self-difference spectrum. For example, if the selected defect type is a particle type, the element information may indicate the elemental composition of the particle. Have Interestingly, the elemental information obtained using the methods disclosed herein is more accurate than the elemental information obtained from a conventional automated EDX retesting procedure. This is because the method disclosed herein locates the reference site more accurately than the previous method.
在步驟106至116之右邊提供一實例性條形圖。如實例性條形圖中所見,顆粒缺陷的元素資訊可指示顆粒缺陷具有係主要矽(Si)或主要碳(C)或主要鐵(Fe)之一元素組成。 An example bar graph is provided to the right of steps 106 through 116. As seen in the example bar graph, the elemental information of the particle defect may indicate that the particle defect has an elemental composition of one of primary (Si) or primary (C) or primary (Fe).
參考步驟118,使用目前揭示之方法獲得的更準確元素資訊可與來自步驟102的形態資訊組合。在步驟118之右邊提供具有經組合資訊之一實例性條形圖。該條形圖展示缺陷頻率對缺陷類型。如實例性條形圖中所展示,繪示四種類型之缺陷分格。前兩種類型(#1及#2)對應於上文關於步驟102所論述之形態為基礎的類型(分別為孔及刮痕)。在此情形中,第三類型(#3)及第四類型(#4)兩者可取決於其元素組成而皆係針對顆粒。舉例而言,第四類型(#4)可對應於組成係主要(Fe)之顆粒,而第三類型(#3)可對應於其他組成(亦即,非Fe)之顆粒。注意,出於說明性目的而提供此實例。可提供具有形態資訊與元素資訊之不同組合的其他缺陷類型。 Referring to step 118, more accurate element information obtained using the methods disclosed herein can be combined with the morphological information from step 102. An example bar graph with combined information is provided to the right of step 118. The bar graph shows the defect frequency versus defect type. As shown in the example bar chart, four types of defect bins are depicted. The first two types (#1 and #2) correspond to the types based on the morphology discussed above with respect to step 102 (holes and scratches, respectively). In this case, both the third type (#3) and the fourth type (#4) may be directed to the particles depending on their elemental composition. For example, the fourth type (#4) may correspond to particles of the composition system main (Fe), and the third type (#3) may correspond to particles of other composition (ie, non-Fe). Note that this example is provided for illustrative purposes. Other types of defects are available that have different combinations of morphological information and elemental information.
圖2係根據本發明之一實施例之用於對所識別缺陷自動次取樣之一程序流程200之一流程圖。自動次取樣有利地減少EDX再檢測應用於其之缺陷的數目,且因此減少執行自動EDX再檢測所需要的時間。此乃因EDX再檢測僅應用於一選定類型(或若干選定類型)的缺陷,而非在來自自動檢驗之一結果檔案中所識別的所有缺陷。 2 is a flow diagram of one of the program flows 200 for automatically subsampling identified defects in accordance with an embodiment of the present invention. Automatic sub-sampling advantageously reduces the number of defects that EDX re-detection applies to, and thus reduces the time required to perform automatic EDX re-detection. This is because EDX retesting is only applied to a selected type (or several selected types) of defects, not all defects identified in the result file from one of the automated tests.
參考步驟202,可執行所識別缺陷之SEM自動再檢測。該SEM自動再檢測可涉及在來自自動檢驗之一結果檔案中所識別之缺陷的高解析度SEM成像。 Referring to step 202, SEM automatic re-detection of the identified defects can be performed. The SEM automatic retest can involve high resolution SEM imaging of defects identified in one of the results files from the automated test.
參考步驟204,可將缺陷分類(亦即「分格」)成若干缺陷類型。在此實例中,如在步驟204右邊之條形圖中所展示,可將缺陷分類成 一「墜塵」(顆粒)缺陷類型及一「其他」(非顆粒)缺陷類型。 Referring to step 204, the defect can be classified (i.e., "divided") into a number of defect types. In this example, as shown in the bar chart on the right side of step 204, the defects can be classified into A type of "dust" (particles) defect and a type of "other" (non-particle) defect.
參考步驟206,做出僅對「墜塵」缺陷類型之缺陷之一選擇以用於EDX再檢測。換言之,自動次取樣僅選擇墜塵缺陷以用於EDX再檢測,而不對其他缺陷執行EDX再檢測。 Referring to step 206, one of the defects of the "falling dust" defect type is selected for EDX re-detection. In other words, automatic subsampling selects only dust defects for EDX retest without performing EDX retest on other defects.
參考步驟208,以一自動方式對選定缺陷執行EDX再檢測。根據本發明之一實施例,可使用上文關於圖1所闡述之具有準確參考光譜之自動EDX程序105以準確參考光譜執行自動EDX再檢測。舉例而言,如在步驟208右邊之條形圖中所展示,可將墜塵缺陷分類(分格)成一矽(Si)顆粒類型、一矽氧化物(Si、O)顆粒類型及一碳(C)顆粒類型。 Referring to step 208, EDX re-detection is performed on the selected defect in an automated manner. In accordance with an embodiment of the present invention, automatic EDX re-detection can be performed with an accurate reference spectrum using the automated EDX program 105 with accurate reference spectra set forth above with respect to FIG. For example, as shown in the bar graph on the right side of step 208, the dust defects can be classified (divided into) a 矽 (Si) particle type, a bismuth oxide (Si, O) particle type, and a carbon ( C) Particle type.
圖3係根據本發明之一實施例之用於以一陣列模式進行自動EDX再檢測之一程序流程之一流程圖。該陣列模式可用於圖案化有一重複單元陣列的目標基板上之區。舉例而言,目標基板可包含一記憶體單元陣列,且陣列模式可用於在記憶體單元陣列內部之自動EDX再檢測。 3 is a flow diagram of one of the program flows for automatic EDX re-detection in an array mode in accordance with an embodiment of the present invention. The array mode can be used to pattern regions on a target substrate having a repeating cell array. For example, the target substrate can include a memory cell array, and the array mode can be used for automatic EDX re-detection within the memory cell array.
參考步驟302,可執行自動檢驗以偵測目標基板中之缺陷。舉例而言,可使用一SEM為基礎之自動檢驗裝置執行自動檢驗。檢驗工具可與SEM為基礎之自動再檢測裝置整合在一起,或與其分開。 Referring to step 302, an automatic check can be performed to detect defects in the target substrate. For example, an automated inspection can be performed using an SEM-based automated inspection device. The inspection tool can be integrated with or separate from the SEM-based automatic re-detection device.
參考步驟304,關於藉由自動檢驗偵測之缺陷之資料可儲存於一結果檔案中。資訊包含關於缺陷之位置之座標資料。 Referring to step 304, the information about the defect detected by the automatic inspection can be stored in a result file. The information contains coordinates about the location of the defect.
參考步驟306,可執行陣列中之所偵測到之缺陷之一SEM自動再檢測。除其他步驟之外,該SEM自動再檢測亦可涉及在來自自動檢驗之結果檔案中所識別之缺陷之高解析度SEM成像。 Referring to step 306, one of the detected defects in the array can be automatically retested by the SEM. Among other steps, the SEM automatic retest may also involve high resolution SEM imaging of defects identified in the results file from the automated inspection.
參考步驟308,可將缺陷分類(亦即「分格」)成若干缺陷類型。可基於如可自高解析度SEM成像觀察的缺陷之形態而進行此分類。舉例而言,缺陷類型可包含一孔類型、一刮痕類型及一顆粒(「墜塵」) 類型。此等僅係幾個實例性缺陷類型。當然,可利用其他及不同缺陷類型。 Referring to step 308, the defect can be classified (i.e., "divided") into a number of defect types. This classification can be based on the morphology of defects as can be observed from high resolution SEM imaging. For example, the defect type can include a hole type, a scratch type, and a particle ("dust") Types of. These are just a few examples of defect types. Of course, other and different types of defects can be utilized.
參考步驟310,可針對結果檔案中之每一缺陷執行此步驟。在此步驟中,可選擇結果檔案中之一缺陷作為所關注缺陷(DOI),且可做出關於EDX再檢測是否將應用於DOI之一確定。可基於DOI之缺陷類型而以一自動方式做出此確定。若EDX再檢測不應用於DOI,則目前DOI之處理可結束,且方法300可往回迴圈且針對經選擇為DOI之一接下來缺陷(若存在)執行步驟310。另一方面,若EDX再檢測將應用於DOI,則方法300可前進以執行步驟312至316。 Referring to step 310, this step can be performed for each defect in the resulting file. In this step, one of the defects in the result file can be selected as the defect of interest (DOI), and one can make a determination as to whether the EDX re-detection will be applied to the DOI. This determination can be made in an automated manner based on the type of defect of the DOI. If the EDX re-detection is not applied to the DOI, then the processing of the current DOI may end, and the method 300 may loop back and perform step 310 for the next defect (if any) selected as one of the DOIs. On the other hand, if EDX re-detection is to be applied to the DOI, method 300 can proceed to perform steps 312 through 316.
關於步驟312,將EDX應用於DOI。此操作可涉及:平移載台以將DOI之位點移動至在視域內;及自DOI獲得一EDX光譜。 Regarding step 312, EDX is applied to the DOI. This operation may involve translating the stage to move the site of the DOI into the field of view; and obtaining an EDX spectrum from the DOI.
關於步驟314,將EDX應用於一參考單元中之對應位點。此操作可涉及使初級電子束沿一個方向偏轉等於沿彼方向之一單元尺寸之一距離。此偏轉使初級電子束移動使得其碰撞在一毗鄰單元(參考單元)中對應於DOI在其單元中之位置之一位置(參考點)上。然後可自該參考點獲得一EDX光譜。 With regard to step 314, EDX is applied to a corresponding location in a reference unit. This operation may involve deflecting the primary electron beam in one direction equal to one of the unit sizes along one of the directions. This deflection causes the primary electron beam to move such that it collides in an adjacent unit (reference unit) corresponding to a position (reference point) of the position of the DOI in its unit. An EDX spectrum can then be obtained from the reference point.
關於步驟316,可產生DOI之EDX光譜與參考點之EDX光譜之間的一差光譜。EDX光譜可在產生差光譜之前經正規化。此後,差光譜可用於獲得關於DOI之元素資訊,如上文關於圖1中之步驟116所闡述。 Regarding step 316, a difference spectrum between the EDX spectrum of the DOI and the EDX spectrum of the reference point can be generated. The EDX spectrum can be normalized before the difference spectrum is produced. Thereafter, the difference spectrum can be used to obtain information about the elements of the DOI, as set forth above with respect to step 116 in FIG.
圖4展示根據本發明之一實施例之繪示一所關注缺陷(DOI)402及一鄰近單元中之一對應參考點404之一電子顯微照片。在此情形中,DOI 402在一重複單元陣列內。如此,可以一陣列模式執行自動EDX,其中藉由使電子束偏轉陣列中之一單元之一寬度(或高度)而獲得參考光譜。 4 shows an electron micrograph of a defect of interest (DOI) 402 and one of the adjacent reference points 404 of one of the adjacent cells, in accordance with an embodiment of the present invention. In this case, the DOI 402 is within a repeating unit array. As such, automatic EDX can be performed in an array mode in which the reference spectrum is obtained by deflecting the electron beam by one of the widths (or heights) of one of the cells.
圖5係根據本發明之一實施例之用於以一非陣列模式進行自動 EDX再檢測之一程序流程之一流程圖。非陣列(「隨機」)模式可用於未圖案化有一重複單元陣列的目標基板之區。舉例而言,一特殊應用積體電路可包含具有定製邏輯電路之一區,且非陣列模式可用於此區內之自動EDX再檢測。 Figure 5 is a diagram for automatic operation in a non-array mode in accordance with an embodiment of the present invention. One of the flow charts of one of the program flow of EDX retesting. A non-array ("random") mode can be used for regions of a target substrate that are not patterned with a repeating cell array. For example, a special application integrated circuit can include a region with a custom logic circuit, and a non-array mode can be used for automatic EDX re-detection within the region.
參考步驟502,可執行自動檢驗以偵測目標基板中之缺陷。舉例而言,可使用一SEM為基礎之自動檢驗裝置執行自動檢驗。檢驗工具可與SEM為基礎之自動再檢測裝置整合在一起,或與其分開。 Referring to step 502, an automatic check can be performed to detect defects in the target substrate. For example, an automated inspection can be performed using an SEM-based automated inspection device. The inspection tool can be integrated with or separate from the SEM-based automatic re-detection device.
參考步驟504,關於藉由自動檢驗偵測到之缺陷之資料可儲存於一結果檔案中。資訊包含關於缺陷之位置之座標資料。 Referring to step 504, the information about the defect detected by the automatic inspection can be stored in a result file. The information contains coordinates about the location of the defect.
參考步驟506,可執行所偵測到之缺陷之一SEM自動再檢測。在此情形中,缺陷可在並非一重複單元陣列之一區(亦即,一非陣列區)中使得可以一「隨機」(非陣列)模式執行自動再檢測。除其他步驟之外,該SEM自動再檢測亦可涉及在來自自動檢驗之結果檔案中所識別之缺陷之高解析度SEM成像。 Referring to step 506, one of the detected defects can be automatically retested by the SEM. In this case, the defect can cause automatic re-detection in a "random" (non-array) mode in a region that is not a repeating cell array (i.e., a non-array region). Among other steps, the SEM automatic retest may also involve high resolution SEM imaging of defects identified in the results file from the automated inspection.
參考步驟508,可將缺陷分類(亦即「分格」)成若干缺陷類型。可基於如可自高解析度SEM成像觀察的缺陷之形態而進行此分類。舉例而言,缺陷類型可包含一孔類型、一刮痕類型及一顆粒(「墜塵」)類型。此等僅係幾個實例性缺陷類型。當然,可利用其他及不同缺陷類型。 Referring to step 508, the defect can be classified (i.e., "divided") into a number of defect types. This classification can be based on the morphology of defects as can be observed from high resolution SEM imaging. For example, the defect type can include a hole type, a scratch type, and a particle ("dust") type. These are just a few examples of defect types. Of course, other and different types of defects can be utilized.
參考步驟510,可針對結果檔案中之每一缺陷執行此步驟。在此步驟中,可選擇結果檔案中之一缺陷作為所關注缺陷(DOI),且可做出關於EDX再檢測是否將應用於DOI之一確定。可基於DOI之缺陷類型而以一自動方式做出此確定。若EDX再檢測不應用於DOI,則目前DOI之處理可結束,且方法500可往回迴圈且針對經選擇為DOI之一接下來缺陷(若存在)執行步驟510。另一方面,若EDX再檢測將應用於DOI,則方法500可前進以執行步驟512至520。 Referring to step 510, this step can be performed for each defect in the resulting file. In this step, one of the defects in the result file can be selected as the defect of interest (DOI), and one can make a determination as to whether the EDX re-detection will be applied to the DOI. This determination can be made in an automated manner based on the type of defect of the DOI. If the EDX re-detection is not applied to the DOI, then the processing of the current DOI may end, and the method 500 may loop back and perform step 510 for the next defect (if any) selected as one of the DOIs. On the other hand, if EDX re-detection is to be applied to the DOI, method 500 can proceed to perform steps 512 through 520.
關於步驟512,可在以有缺陷晶粒上之DOI之缺陷位置座標為中心之一視域中執行電子束成像以便使囊括缺陷位點之一區域成像。較佳地,環繞缺陷位點之區域之影像可係一高解析度影像。 With respect to step 512, electron beam imaging can be performed in a field of view centered on the defect location coordinates of the DOI on the defective die to image a region encompassing the defect site. Preferably, the image surrounding the area of the defect site is a high resolution image.
關於步驟514,EDX應用於DOI以便獲得DOI之一EDX光譜(缺陷光譜)。來自此EDX光譜之元素資訊不僅包含來自DOI之元素資訊,而且包含來自環繞DOI之材料之元素資訊。 Regarding step 514, EDX is applied to the DOI to obtain an EDX spectrum (defect spectrum) of one of the DOIs. Elemental information from this EDX spectrum contains not only elemental information from the DOI, but also elemental information from materials surrounding the DOI.
關於步驟516,可在以參考晶粒(而非有缺陷晶粒)上之缺陷位置座標為中心之一視域中執行電子束成像以便使囊括參考位點之一區域成像。較佳地,環繞參考位點之區域之影像可係一高解析度影像。 With respect to step 516, electron beam imaging can be performed in a field of view centered at the defect location coordinates on the reference die (rather than the defective die) to image a region encompassing the reference site. Preferably, the image surrounding the region of the reference site is a high resolution image.
在步驟514之後且在步驟516之前,固持目標基板之載台經平移以自有缺陷晶粒上之缺陷位點移動至參考晶粒(其較佳地毗鄰於有缺陷晶粒)上之參考位點。此外,囊括參考位點之影像之圖案可對準至囊括缺陷位點之影像之圖案,且經對準影像可用於以高準確度確定參考位點之位置。 After step 514 and prior to step 516, the stage holding the target substrate is translated to move the defect site on the defective die to a reference bit on the reference die (which preferably is adjacent to the defective die) point. In addition, the pattern of images encompassing the reference site can be aligned to the image of the image that encompasses the defect site, and the aligned image can be used to determine the position of the reference site with high accuracy.
關於步驟518,將EDX應用於參考位點以便獲得來自參考點之一EDX光譜(參考光譜)。在正規化之後,可自缺陷光譜減去此參考光譜以獲得一差光譜,如步驟520中所指示。此後,差光譜可用於獲得關於DOI之元素資訊,如上文關於圖1中之步驟116所闡述。 Regarding step 518, EDX is applied to the reference site to obtain an EDX spectrum (reference spectrum) from one of the reference points. After normalization, this reference spectrum can be subtracted from the defect spectrum to obtain a difference spectrum, as indicated in step 520. Thereafter, the difference spectrum can be used to obtain information about the elements of the DOI, as set forth above with respect to step 116 in FIG.
圖6展示根據本發明之一實施例之繪示一所關注缺陷(DOI)及一參考晶粒上之一對應參考點的電子顯微照片。在此情形中,DOI係在晶粒之一非陣列部分內。如此,可以一非陣列模式執行自動EDX,其中藉由首先定位參考晶粒上之參考點來獲得參考光譜,且載台平移係用以在DOI與參考點之間移動。 6 shows an electron micrograph of a defect of interest (DOI) and a corresponding reference point on a reference die, in accordance with an embodiment of the present invention. In this case, the DOI is in one of the non-array portions of the die. As such, automatic EDX can be performed in a non-array mode in which the reference spectrum is obtained by first locating a reference point on the reference die, and the stage translation is used to move between the DOI and the reference point.
圖7係根據本發明之一實施例之用於組合形態缺陷結果與元素缺陷結果以獲得一最終帕累托之一自動程序之一流程圖。 7 is a flow diagram of one of an automated procedure for combining a morphological defect result with an element defect result to obtain a final Pareto, in accordance with an embodiment of the present invention.
參考步驟702,可執行所偵測到之缺陷之一SEM自動再檢測。除 其他步驟之外,該SEM自動再檢測可涉及在來自自動檢驗之一結果檔案中所識別之缺陷的高解析度SEM成像。 Referring to step 702, one of the detected defects can be automatically retested by the SEM. except In addition to the other steps, the SEM automatic retest can involve high resolution SEM imaging of defects identified in one of the results files from the automated test.
參考步驟704,可基於缺陷之形態來執行缺陷之自動分類。可將缺陷分類(亦即「分格」)成若干缺陷類型,且每一缺陷類型可由一類別碼表示。舉例而言,缺陷類型可包含作為類型1之一孔類型、作為類型2之一刮痕類型,及作為類型3之一顆粒(「墜塵」)類型。此等僅係幾個實例性缺陷類型。當然,可利用其他及不同缺陷類型。 Referring to step 704, automatic classification of defects can be performed based on the form of the defect. Defects can be classified (ie, "divided") into a number of defect types, and each defect type can be represented by a category code. For example, the defect type may include one of type 1 as a hole type, one type 2 as a scratch type, and one type 3 ("dust") type. These are just a few examples of defect types. Of course, other and different types of defects can be utilized.
參考步驟706,可選擇一特定類別碼之缺陷用於自動EDX再檢測,同時可針對其他類別碼之缺陷跳過自動EDX再檢測。換言之,針對每一缺陷,可做出關於缺陷是否具有特定類別碼之一確定。若類別碼並非特定類別碼,則不執行目前缺陷之自動EDX再檢測,且方法700可往回迴圈,且針對一接下來缺陷(若存在)執行步驟706。另一方面,若類別碼係特定類別碼,則方法700可前進以執行步驟708及710。 Referring to step 706, a defect of a particular class code can be selected for automatic EDX re-detection while automatic EDX re-detection can be skipped for defects of other class codes. In other words, for each defect, a determination can be made as to whether the defect has a particular class code. If the category code is not a particular category code, then automatic EDX re-detection of the current defect is not performed, and method 700 can loop back and step 706 is performed for a next defect, if any. On the other hand, if the category code is a particular category code, method 700 can proceed to perform steps 708 and 710.
參考步驟708,針對特定類別碼之缺陷,執行自動EDX再檢測。為提供一準確參考光譜,若正再檢測之缺陷係在一重複單元陣列內,則可藉助上文關於圖3所闡述之步驟312至316來執行自動EDX再檢測,或若正再檢測之缺陷不在此一陣列區內,則藉助步驟512至520來執行自動EDX再檢測。作為步驟708之一結果,可針對特定類別碼之每一缺陷來獲得一差光譜。 Referring to step 708, automatic EDX re-detection is performed for defects of a particular class code. In order to provide an accurate reference spectrum, if the defect being retested is within a repeating cell array, automatic EDX retesting may be performed by means of steps 312 through 316 set forth above with respect to Figure 3, or if the defect is being retested Not in this array area, automatic EDX re-detection is performed by means of steps 512 to 520. As a result of one of the steps 708, a difference spectrum can be obtained for each defect of the particular class code.
參考步驟710,可使用差光譜來獲得特定類別碼之每一缺陷之一元素組成,且可基於其元素組成來將特定類別碼之缺陷分格。舉例而言,若特定類別碼對應於顆粒或「墜塵」缺陷,則可基於此等缺陷之元素組成來將此等缺陷分離成數個元素組成分格。舉例而言,元素組成分格可包含一矽(Si)分格、一矽氧化物(Si、O)分格及一碳(C)分格。 Referring to step 710, the difference spectrum can be used to obtain an elemental composition of each of the defects of the particular class code, and the defects of the particular class code can be binned based on its elemental composition. For example, if a particular category code corresponds to a particle or "dusting" defect, the defects may be separated into a plurality of elemental compositions based on the elemental composition of the defects. For example, the elemental composition may include a 矽 (Si) cell, a bismuth oxide (Si, O) cell, and a carbon (C) cell.
參考步驟712,可產生在將缺陷分類中使用且組合形態資訊與元素資訊兩者之一缺陷帕累托(最終帕累托)。一缺陷帕累托係缺陷頻率對類型之一條形圖。該缺陷帕累托可用於做出關於需要採取什麼校正動作來減少缺陷率的判定。在一項實施方案中,可基於缺陷之元素組成來劃分具有特定類別碼之缺陷。 Referring to step 712, a defect Pareto (final Pareto) that is used in classifying the defect and combining the morphological information with the element information can be generated. A bar graph of a defect Pareto system defect frequency pair type. The defect Pareto can be used to make a determination as to what corrective action needs to be taken to reduce the defect rate. In one embodiment, defects having a particular class code can be divided based on the elemental composition of the defect.
舉例而言,考量到來自步驟704之形態缺陷類型包含作為類型1之一孔類型、作為類型2之一刮痕類型,及作為類型3之一顆粒(「墜塵」)類型。進一步考量到用於選擇用於步驟706中之自動EDX再檢測之缺陷的特定類別碼係類型3之類別碼(顆粒或「墜塵」缺陷)。進一步考量到可基於顆粒之元素組成來劃分此等墜塵缺陷。舉例而言,係矽氧化物之墜塵缺陷可經編碼為類型4,而具有其他組成(舉例而言,Si或C)之墜塵缺陷則可保持經編碼為類型3。在步驟712左邊之所得條形圖繪示此實例中之最終帕累托。 For example, consider that the morphological defect type from step 704 includes one of the hole types as Type 1, one of the scratch types of Type 2, and one of Type 3 ("Dust") types. Further consideration is given to the category code (particle or "dusting" defect) of the particular category code system type 3 used to select the defect for the automatic EDX re-detection in step 706. It is further considered that these dust defects can be classified based on the elemental composition of the particles. For example, a dust fall defect of a tantalum oxide can be coded as type 4, while a dust fall defect having other compositions (for example, Si or C) can remain encoded as type 3. The resulting bar graph on the left side of step 712 depicts the final Pareto in this example.
圖8係根據本發明之一實施例之比較用於自動EDX再檢測之一現有程序800與用於自動EDX再檢測之一發明程序850之一圖式。如所繪示,與現有程序800相比,發明程序850有利地需要較少步驟且更迅速地提供結果。 Figure 8 is a diagram of one of the prior art programs 800 for automatic EDX re-detection and one of the inventive programs 850 for automatic EDX re-detection, in accordance with an embodiment of the present invention. As illustrated, the inventive program 850 advantageously requires fewer steps and provides results more quickly than existing programs 800.
現有程序800包含以下步驟:由操作者請求802之一再檢測工作;把將藉由SEM再檢測之晶圓轉移804至再檢測工具(此可花費大致15分鐘);執行806自動SEM再檢測(此可花費大致10分鐘);由操作者執行808將缺陷分成若干缺陷類型之線下分類(此可花費大致30分鐘);由操作者針對在一選定類型下分類之一組缺陷(舉例而言,墜塵缺陷)請求810一EDX工作;把將藉由EDX再檢測之晶圓轉移812至EDX工具(此可花費大致15分鐘);及然後可對該組缺陷執行814自動EDX(此可花費大致5分鐘)。 The existing procedure 800 includes the steps of: requesting one of the 802 re-detection operations by the operator; transferring 804 the wafer to be re-detected by SEM to the re-detection tool (this can take approximately 15 minutes); performing 806 automatic SEM re-detection (this It can take approximately 10 minutes); the operator performs 808 to divide the defect into offline classifications of several defect types (this can take approximately 30 minutes); the operator classifies a set of defects for a selected type (for example, Dust Defect) Request 810 an EDX job; transfer 812 to the EDX tool by EDX retesting the wafer (this can take approximately 15 minutes); and then perform 814 Auto EDX on the set of defects (this can cost roughly 5 minutes).
如所指示,需要操作者動作用於現有程序800中之三個步驟(步驟 802、808及810)。現有程序850通常可花費大約75分鐘直至獲得所要EDX資料為止。 As indicated, an operator action is required for the three steps in the existing program 800 (steps 802, 808 and 810). Existing program 850 can typically take approximately 75 minutes until the desired EDX data is obtained.
相比之下,發明程序850包含以下步驟:由操作者請求802之一再檢測工作;把將藉由SEM再檢測之晶圓轉移804至再檢測工具(此可花費大致15分鐘);執行806自動SEM再檢測(此可花費大致5分鐘);及然後可使用上文關於圖1以一通用方式闡述之自動判定為基礎之方法100(參見步驟102至118)執行852即時EDX再檢測。 In contrast, the inventive procedure 850 includes the steps of: requesting an operator to re-detect the work by 802; transferring 804 the wafer to be re-detected by SEM to the re-detection tool (this can take approximately 15 minutes); The SEM retests (this can take approximately 5 minutes); and then the 852 instant EDX retest can be performed using the method 100 (see steps 102 through 118) based on the automatic determination described above with respect to Figure 1 in a general manner.
如所指示,需要操作者動作僅用於發明程序850中之第一步驟(步驟802)(而非現有程序800中之三個步驟)。此外,發明程序850通常可僅花費大約30分鐘直至獲得所要EDX資料(而非使用現有程序800花費大約75分鐘)。 As indicated, the operator action is required only for the first step in the inventive program 850 (step 802) (rather than the three steps in the existing program 800). Moreover, the inventive program 850 can typically take only about 30 minutes until the desired EDX data is obtained (rather than using the existing program 800 takes about 75 minutes).
圖9係根據本發明之一實施例之具有一能量分散式x射線(EDX)偵測系統920之一掃描電子顯微鏡裝置900之一示意圖。如圖9之剖面圖中所展示,電子束柱可包含一源901、一維因(Wien)濾波器、偏轉器906、聚焦透鏡907、一物鏡908及固持一目標基板910之一可平移載台919。 9 is a schematic illustration of one of the scanning electron microscope devices 900 having an energy dispersive x-ray (EDX) detection system 920, in accordance with an embodiment of the present invention. As shown in the cross-sectional view of FIG. 9, the electron beam column may include a source 901, a Wien filter, a deflector 906, a focus lens 907, an objective lens 908, and one of the target substrates 910. Taiwan 919.
源901產生一入射電子束(初級電子束)902。入射電子束902可通過一維因濾波器904。維因濾波器904係經組態以產生彼此交叉之電場及磁場之一電子光學元件。可利用可控制偏轉器906及聚焦透鏡907。偏轉器906可沿x方向且沿y方向施加可獨立控制靜電場。偏轉器906可經控制以使電子束跨越目標基板910之表面掃描或出於其他目的使電子束偏轉。舉例而言,目標基板910可係一圖案化基板,諸如所製造之一積體電路或用於微影之一比例光罩。 Source 901 produces an incident electron beam (primary electron beam) 902. The incident electron beam 902 can pass through a one-dimensional filter 904. The weiin filter 904 is configured to generate one of an electric field and a magnetic field that intersect each other. A controllable deflector 906 and a focusing lens 907 can be utilized. The deflector 906 can independently control the electrostatic field in the x-direction and in the y-direction. The deflector 906 can be controlled to cause the electron beam to scan across the surface of the target substrate 910 or to deflect the electron beam for other purposes. For example, the target substrate 910 can be a patterned substrate, such as an integrated circuit fabricated or a refracting refractory mask.
利用聚焦透鏡907以將入射電子束902聚焦成晶圓或其他基板樣本910之表面上之一束點。根據一項實施例,聚焦透鏡907可藉由產生電場及/或磁場來操作。 Focusing lens 907 is utilized to focus incident electron beam 902 into a beam spot on the surface of a wafer or other substrate sample 910. According to an embodiment, the focusing lens 907 can be operated by generating an electric field and/or a magnetic field.
作為入射電子束902之掃描之一結果,自目標基板910(舉例而言,其可係一半導體晶圓或一比例光罩)發射或散射次級電子。目標基板910可由一可移動載台911固持。 As a result of scanning of the incident electron beam 902, secondary electrons are emitted or scattered from the target substrate 910 (which may, for example, be a semiconductor wafer or a scale mask). The target substrate 910 can be held by a movable stage 911.
次級電子可藉由曝露至物鏡(最終透鏡)908之電磁場而自目標基板910提取。電磁場用於將所發射電子拘限至距入射電子束光軸一相對小之距離內且使此等電子加速向上進入至柱中。以此方式,自該等次級電子形成一次級電子束912。 The secondary electrons can be extracted from the target substrate 910 by the electromagnetic field exposed to the objective lens (final lens) 908. The electromagnetic field is used to trap the emitted electrons to a relatively small distance from the optical axis of the incident beam and to accelerate the electrons upward into the column. In this manner, the primary electron beam 912 is formed from the secondary electrons.
維因濾波器904使次級電子束912自入射電子束902之光軸偏轉至一偵測軸(用於該裝置之次級電子(SE)偵測系統914之光軸)。此用以將散射電子束912與入射電子束902分離。SE偵測系統914偵測次級電子束912且產生可用於形成目標基板之表面之影像之資料信號。 The neutron filter 904 deflects the secondary electron beam 912 from the optical axis of the incident electron beam 902 to a detection axis (the optical axis of the secondary electron (SE) detection system 914 for the device). This is used to separate the scattered electron beam 912 from the incident electron beam 902. The SE detection system 914 detects the secondary electron beam 912 and generates a data signal that can be used to form an image of the surface of the target substrate.
一儀器控制與資料處理(控制/處理)系統950可包含一或多個處理器(亦即,微處理器或微控制器)952、資料儲存器(舉例而言,包含硬碟機儲存器及記憶體晶片)954、一使用者介面957及一顯示系統958。資料儲存器954可儲存或保持電腦可讀程式碼(指令)955及資料956,且處理器952可執行程式碼955且處理資料956。使用者介面957可接收使用者輸入。顯示系統958可經組態以將影像資料及其他資訊顯示給一使用者。 An instrument control and data processing (control/processing) system 950 can include one or more processors (ie, microprocessors or microcontrollers) 952, data storage (eg, including hard disk storage and Memory chip 954, a user interface 957 and a display system 958. The data store 954 can store or maintain computer readable code (instructions) 955 and data 956, and the processor 952 can execute the code 955 and process the data 956. User interface 957 can receive user input. Display system 958 can be configured to display image data and other information to a user.
控制/處理系統950可連接至電子束柱之各種分量且可用於控制電子束柱之各種分量以便實施本文中所揭示之方法或程序。舉例而言,載台911之移動及藉由偏轉器906進行之掃描可由控制/處理系統950所執行之電腦可讀程式碼955控制。 Control/processing system 950 can be coupled to various components of the electron beam column and can be used to control various components of the electron beam column to implement the methods or programs disclosed herein. For example, movement of stage 911 and scanning by deflector 906 can be controlled by computer readable program code 955 executed by control/processing system 950.
另外,控制/處理系統950亦可處理來自SE偵測系統914之電子影像資料及來自EDX偵測系統920之x射線資料。特定而言,控制/處理系統950中之電腦可讀程式碼955可用於實施與如本文中所闡述之自動EDX方法有關之程序。 In addition, the control/processing system 950 can also process electronic image data from the SE detection system 914 and x-ray data from the EDX detection system 920. In particular, computer readable code 955 in control/processing system 950 can be used to implement programs related to the automated EDX method as set forth herein.
上文所闡述之圖式未必符合比例且意欲為說明性且不限於一特定實施方案。磁物鏡之特定尺寸、幾何形狀及透鏡電流將變化且取決於每一實施方案。 The drawings set forth above are not necessarily to scale and are intended to be illustrative and not limited to a particular embodiment. The particular size, geometry, and lens current of the magnetic objective will vary and will depend on each embodiment.
舉例而言,上文所闡述之技術可用於一自動檢驗與偵測分析系統中且應用於在一生產環境中檢驗且再檢測晶圓、X射線遮罩及類似基板。其他用途亦係可能的。 For example, the techniques set forth above can be used in an automated inspection and detection analysis system and for inspection and re-detection of wafers, X-ray masks, and the like in a production environment. Other uses are also possible.
在上述闡述中,給出眾多特定細節以提供對本發明之實施例之一透徹理解。然而,本發明之所圖解說明實施例之以上闡述並非意欲係窮盡性或將本發明限制於所揭示之精確形式。熟習相關技術者將認識到,可在不具有特定細節中之一或多者之情況下或者藉助其他方法、組件等來實踐本發明。在其他例項中,未詳細展示或闡述眾所周知之結構或操作以避免混淆本發明之態樣。雖然出於說明性目的而在本文中闡述本發明之特定實施例及實例,但如熟習此項技術者將認識到,可在本發明之範疇內作出各種等效修改。 In the above description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the invention. However, the above-described embodiments of the present invention are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Those skilled in the art will recognize that the invention can be practiced without one or more of the specific details or by other methods, components, and the like. In other instances, well-known structures or operations are not shown or described in detail to avoid obscuring aspects of the invention. While the invention has been described with respect to the specific embodiments and examples of the present invention, it will be understood by those skilled in the art that various equivalent modifications can be made within the scope of the invention.
可根據以上詳細闡述對本發明做出此等修改。以下申請專利範圍中使用之術語不應理解為將本發明限制於說明書及申請專利範圍中所揭示之特定實施例。相反,本發明之範疇將由以下申請專利範圍來確定,該等申請專利範圍將根據請求項解釋之所創建原則來加以理解。 These modifications can be made to the invention in light of the above detailed description. The terms used in the following claims should not be construed as limiting the invention to the specific embodiments disclosed in the specification and claims. Instead, the scope of the invention will be determined by the following claims, which are to be understood in accordance with the principles of the claims.
Claims (16)
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462069048P | 2014-10-27 | 2014-10-27 | |
US62/069,048 | 2014-10-27 | ||
US201562159180P | 2015-05-08 | 2015-05-08 | |
US62/159,180 | 2015-05-08 | ||
US201562171698P | 2015-06-05 | 2015-06-05 | |
US62/171,698 | 2015-06-05 | ||
IN3080CH2015 | 2015-06-19 | ||
IN3080/CHE/2015 | 2015-06-19 | ||
US201562204325P | 2015-08-12 | 2015-08-12 | |
US62/204,325 | 2015-08-12 | ||
US14/919,563 | 2015-10-21 | ||
US14/919,563 US9696268B2 (en) | 2014-10-27 | 2015-10-21 | Automated decision-based energy-dispersive x-ray methodology and apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201627659A TW201627659A (en) | 2016-08-01 |
TWI656340B true TWI656340B (en) | 2019-04-11 |
Family
ID=55791780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104134805A TWI656340B (en) | 2014-10-27 | 2015-10-22 | Automated decision-based energy-dispersive x-ray methodology and apparatus |
Country Status (8)
Country | Link |
---|---|
US (1) | US9696268B2 (en) |
JP (1) | JP6814733B2 (en) |
KR (1) | KR102219788B1 (en) |
CN (2) | CN106796188A (en) |
DE (1) | DE112015004853T5 (en) |
SG (1) | SG11201702727SA (en) |
TW (1) | TWI656340B (en) |
WO (1) | WO2016069523A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9778215B2 (en) * | 2012-10-26 | 2017-10-03 | Fei Company | Automated mineral classification |
US9696268B2 (en) * | 2014-10-27 | 2017-07-04 | Kla-Tencor Corporation | Automated decision-based energy-dispersive x-ray methodology and apparatus |
KR102409943B1 (en) * | 2017-11-29 | 2022-06-16 | 삼성전자주식회사 | Method of detecting a defect and apparatus for performing the same |
JP6679049B2 (en) * | 2018-09-28 | 2020-04-15 | 株式会社リガク | Measuring device, program, and control method of measuring device |
US10928336B1 (en) * | 2019-07-29 | 2021-02-23 | Applied Materials Israel Ltd. | X-ray based evaluation of a status of a structure of a substrate |
DE102019126200A1 (en) * | 2019-09-27 | 2021-04-01 | Carl Zeiss Microscopy Gmbh | EDX process |
KR20220062635A (en) * | 2019-10-18 | 2022-05-17 | 주식회사 히타치하이테크 | Inspection system, and non-transitory computer-readable medium |
EP3995808B1 (en) * | 2020-11-09 | 2023-01-04 | Siltronic AG | Method for classifying unknown particles on a surface of a semiconductor wafer |
CN114723650A (en) * | 2020-12-21 | 2022-07-08 | 东方晶源微电子科技(北京)有限公司 | Wafer defect detection method and device, equipment and storage medium |
CN116130377B (en) * | 2023-04-17 | 2023-09-29 | 西安奕斯伟材料科技股份有限公司 | Method, device and system for detecting defects of epitaxial wafer and manufacturing method thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5065020A (en) * | 1989-11-22 | 1991-11-12 | Hitachi, Ltd. | Energy dispersive X-ray spectrometer |
US5263075A (en) * | 1992-01-13 | 1993-11-16 | Ion Track Instruments, Inc. | High angular resolution x-ray collimator |
JP2002083564A (en) * | 2000-09-05 | 2002-03-22 | Hitachi Ltd | Analyzer and analyzing method for minute portion |
US6990086B1 (en) * | 2001-01-26 | 2006-01-24 | Cisco Technology, Inc. | Method and system for label edge routing in a wireless network |
JP4881307B2 (en) * | 2005-08-04 | 2012-02-22 | エスアイアイ・ナノテクノロジー株式会社 | X-ray fluorescence analysis method |
TW201430336A (en) * | 2013-01-23 | 2014-08-01 | Huang Tian Xing | Defect detection method, device and system |
TW201430768A (en) * | 2013-01-30 | 2014-08-01 | Hitachi High Tech Corp | Defect observation method and defect observation device |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2787924B2 (en) * | 1989-06-29 | 1998-08-20 | 株式会社島津製作所 | Electron beam micro analyzer |
US5649169A (en) * | 1995-06-20 | 1997-07-15 | Advanced Micro Devices, Inc. | Method and system for declustering semiconductor defect data |
US5656812A (en) * | 1995-07-21 | 1997-08-12 | Jeol Ltd. | Electron probe microanalyzer and X-ray analysis using same |
US6259960B1 (en) * | 1996-11-01 | 2001-07-10 | Joel Ltd. | Part-inspecting system |
JP3500264B2 (en) | 1997-01-29 | 2004-02-23 | 株式会社日立製作所 | Sample analyzer |
JP3101257B2 (en) * | 1998-01-30 | 2000-10-23 | 理学電機工業株式会社 | Method for inspecting sample surface and X-ray analyzer using the same |
US6442233B1 (en) | 1998-06-18 | 2002-08-27 | American Science And Engineering, Inc. | Coherent x-ray scatter inspection system with sidescatter and energy-resolved detection |
WO2000016077A1 (en) | 1998-09-17 | 2000-03-23 | Noran Instruments, Inc. | Application of x-ray optics to energy dispersive spectroscopy |
US6407386B1 (en) | 1999-02-23 | 2002-06-18 | Applied Materials, Inc. | System and method for automatic analysis of defect material on semiconductors |
JP2001153826A (en) * | 1999-11-26 | 2001-06-08 | Matsushita Electronics Industry Corp | Device and method for x-ray photoelectron spectroscopy |
JP4312910B2 (en) * | 1999-12-02 | 2009-08-12 | 株式会社日立製作所 | Review SEM |
US6528818B1 (en) | 1999-12-14 | 2003-03-04 | Kla-Tencor | Test structures and methods for inspection of semiconductor integrated circuits |
US6787773B1 (en) | 2000-06-07 | 2004-09-07 | Kla-Tencor Corporation | Film thickness measurement using electron-beam induced x-ray microanalysis |
US6744266B2 (en) | 2000-10-02 | 2004-06-01 | Applied Materials, Inc. | Defect knowledge library |
JP4178741B2 (en) | 2000-11-02 | 2008-11-12 | 株式会社日立製作所 | Charged particle beam apparatus and sample preparation apparatus |
US6423557B1 (en) | 2001-03-15 | 2002-07-23 | Advanced Micro Devices, Inc. | ADC based in-situ destructive analysis selection and methodology therefor |
JP2003107022A (en) * | 2001-09-28 | 2003-04-09 | Hitachi Ltd | Equipment and method for inspecting defect |
US6753261B1 (en) | 2002-01-17 | 2004-06-22 | Advanced Micro Devices, Inc. | In-situ chemical composition monitor on wafer during plasma etching for defect control |
EP1563381A4 (en) * | 2002-11-12 | 2009-10-28 | Fei Co | Defect analyzer |
JP3993817B2 (en) * | 2002-12-11 | 2007-10-17 | 株式会社日立製作所 | Defect composition analysis method and apparatus |
JP3888980B2 (en) | 2003-03-18 | 2007-03-07 | 株式会社日立ハイテクノロジーズ | Material identification system |
US7132652B1 (en) | 2003-03-25 | 2006-11-07 | Kla-Tencor Technologies Corporation | Automatic classification of defects using pattern recognition applied to X-ray spectra |
US6952653B2 (en) * | 2003-04-29 | 2005-10-04 | Kla-Tencor Technologies Corporation | Single tool defect classification solution |
US7092485B2 (en) | 2003-05-27 | 2006-08-15 | Control Screening, Llc | X-ray inspection system for detecting explosives and other contraband |
JP2005114384A (en) * | 2003-10-03 | 2005-04-28 | Hitachi High-Technologies Corp | Method and apparatus for elemental analysis of flaw |
JP4931799B2 (en) | 2004-03-22 | 2012-05-16 | ケーエルエー−テンカー コーポレイション | Method and system for measuring substrate characteristics or preparing a substrate for analysis |
KR20070010472A (en) * | 2005-07-19 | 2007-01-24 | 삼성전자주식회사 | Hybrid type polarizer, method for manufacturing thereof and display device having the same |
JP4533306B2 (en) * | 2005-12-06 | 2010-09-01 | 株式会社日立ハイテクノロジーズ | Semiconductor wafer inspection method and defect review apparatus |
JP4644613B2 (en) * | 2006-02-27 | 2011-03-02 | 株式会社日立ハイテクノロジーズ | Defect observation method and apparatus |
JP4825021B2 (en) | 2006-02-28 | 2011-11-30 | 株式会社日立ハイテクノロジーズ | Report format setting method, report format setting device, and defect review system |
JP4307470B2 (en) * | 2006-08-08 | 2009-08-05 | 株式会社日立ハイテクノロジーズ | Charged particle beam apparatus, sample processing method, and semiconductor inspection apparatus |
US7397556B2 (en) * | 2006-10-31 | 2008-07-08 | International Business Machines Corporation | Method, apparatus, and computer program product for optimizing inspection recipes using programmed defects |
US7904845B2 (en) | 2006-12-06 | 2011-03-08 | Kla-Tencor Corp. | Determining locations on a wafer to be reviewed during defect review |
JP5164598B2 (en) * | 2008-02-18 | 2013-03-21 | 株式会社日立ハイテクノロジーズ | Review method and review device |
JP2010078478A (en) * | 2008-09-26 | 2010-04-08 | Toshiba Corp | Apparatus and method for inspecting defect |
EP2284524B1 (en) | 2009-08-10 | 2014-01-15 | FEI Company | Microcalorimetry for X-ray spectroscopy |
US9518808B2 (en) * | 2010-02-16 | 2016-12-13 | Research Foundation Of State University Of New York | Ammunition and weapon type identification based on spectroscopic gunshot residue analysis |
US9431212B2 (en) | 2010-06-03 | 2016-08-30 | Carl Zeiss Sms Gmbh | Method for determining the performance of a photolithographic mask |
JP2012242146A (en) * | 2011-05-17 | 2012-12-10 | Hitachi High-Technologies Corp | Scanning electron microscope and sample preparation method |
US8421007B2 (en) | 2011-05-18 | 2013-04-16 | Tohoku University | X-ray detection system |
EP2605005A1 (en) | 2011-12-14 | 2013-06-19 | FEI Company | Clustering of multi-modal data |
JP2013114854A (en) | 2011-11-28 | 2013-06-10 | Hitachi High-Technologies Corp | Sample observation device and marking method |
JP6355318B2 (en) | 2012-11-15 | 2018-07-11 | 株式会社日立ハイテクサイエンス | Cross-section processing observation method and apparatus |
KR102026936B1 (en) * | 2013-03-26 | 2019-10-01 | 삼성디스플레이 주식회사 | Inspection system using scanning electron microscope |
JP6328456B2 (en) | 2014-03-20 | 2018-05-23 | 株式会社日立ハイテクサイエンス | Energy dispersive X-ray analyzer and energy dispersive X-ray analysis method |
JP2015216285A (en) * | 2014-05-13 | 2015-12-03 | 株式会社日立ハイテクノロジーズ | Defect analytical method |
US9218940B1 (en) * | 2014-05-30 | 2015-12-22 | Fei Company | Method and apparatus for slice and view sample imaging |
US9696268B2 (en) * | 2014-10-27 | 2017-07-04 | Kla-Tencor Corporation | Automated decision-based energy-dispersive x-ray methodology and apparatus |
-
2015
- 2015-10-21 US US14/919,563 patent/US9696268B2/en active Active
- 2015-10-22 TW TW104134805A patent/TWI656340B/en active
- 2015-10-27 WO PCT/US2015/057455 patent/WO2016069523A1/en active Application Filing
- 2015-10-27 CN CN201580055501.2A patent/CN106796188A/en active Pending
- 2015-10-27 SG SG11201702727SA patent/SG11201702727SA/en unknown
- 2015-10-27 KR KR1020177014282A patent/KR102219788B1/en active IP Right Grant
- 2015-10-27 DE DE112015004853.7T patent/DE112015004853T5/en active Pending
- 2015-10-27 CN CN202010883345.1A patent/CN111982953A/en active Pending
- 2015-10-27 JP JP2017521139A patent/JP6814733B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5065020A (en) * | 1989-11-22 | 1991-11-12 | Hitachi, Ltd. | Energy dispersive X-ray spectrometer |
US5263075A (en) * | 1992-01-13 | 1993-11-16 | Ion Track Instruments, Inc. | High angular resolution x-ray collimator |
JP2002083564A (en) * | 2000-09-05 | 2002-03-22 | Hitachi Ltd | Analyzer and analyzing method for minute portion |
US6990086B1 (en) * | 2001-01-26 | 2006-01-24 | Cisco Technology, Inc. | Method and system for label edge routing in a wireless network |
JP4881307B2 (en) * | 2005-08-04 | 2012-02-22 | エスアイアイ・ナノテクノロジー株式会社 | X-ray fluorescence analysis method |
TW201430336A (en) * | 2013-01-23 | 2014-08-01 | Huang Tian Xing | Defect detection method, device and system |
TW201430768A (en) * | 2013-01-30 | 2014-08-01 | Hitachi High Tech Corp | Defect observation method and defect observation device |
Also Published As
Publication number | Publication date |
---|---|
DE112015004853T5 (en) | 2017-07-13 |
SG11201702727SA (en) | 2017-05-30 |
KR102219788B1 (en) | 2021-02-23 |
JP2017532564A (en) | 2017-11-02 |
JP6814733B2 (en) | 2021-01-20 |
WO2016069523A1 (en) | 2016-05-06 |
TW201627659A (en) | 2016-08-01 |
KR20170077184A (en) | 2017-07-05 |
US20160116425A1 (en) | 2016-04-28 |
CN111982953A (en) | 2020-11-24 |
CN106796188A (en) | 2017-05-31 |
US9696268B2 (en) | 2017-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI656340B (en) | Automated decision-based energy-dispersive x-ray methodology and apparatus | |
US8461527B2 (en) | Scanning electron microscope and method for processing an image obtained by the scanning electron microscope | |
US6072178A (en) | Sample analyzing apparatus | |
US9194829B2 (en) | Process for performing automated mineralogy | |
US7903867B2 (en) | Method and apparatus for displaying detected defects | |
KR20210010948A (en) | Correlation of SEM and Optical Images for Wafer Noise Newson Identification | |
US9046344B2 (en) | Multiple image metrology | |
JP2012242146A (en) | Scanning electron microscope and sample preparation method | |
US20130134308A1 (en) | Sample observation apparatus and method of marking | |
JP6900252B2 (en) | How to utilize the information about the frequency distribution shape of the inspection result of the pattern inspection device | |
JP2024507152A (en) | High-resolution X-ray spectroscopy surface material analysis with transparent substrate | |
US11626267B2 (en) | Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage | |
US8110799B2 (en) | Confocal secondary electron imaging | |
KR102001715B1 (en) | Methods and apparatus for measurement of relative critical dimensions | |
KR20210056407A (en) | Image forming method and image forming system | |
Dworkin | Automated workflow improves speed and precision of S/TEM process monitoring for 22 nm FinFET structures | |
JP6310676B2 (en) | Electron beam application apparatus and defect classification method using the same | |
WO2015064399A1 (en) | Charged-particle-beam device and program recording medium | |
JP2014130745A (en) | Charged particle beam device |