TWI650790B - 電漿處理裝置 - Google Patents
電漿處理裝置 Download PDFInfo
- Publication number
- TWI650790B TWI650790B TW106120722A TW106120722A TWI650790B TW I650790 B TWI650790 B TW I650790B TW 106120722 A TW106120722 A TW 106120722A TW 106120722 A TW106120722 A TW 106120722A TW I650790 B TWI650790 B TW I650790B
- Authority
- TW
- Taiwan
- Prior art keywords
- support
- side wall
- plasma processing
- peripheral surface
- opening
- Prior art date
Links
- 230000002093 peripheral effect Effects 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 20
- 238000007789 sealing Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 2
- 230000001568 sexual effect Effects 0.000 claims 1
- 238000004904 shortening Methods 0.000 abstract description 5
- 210000002381 plasma Anatomy 0.000 description 45
- 239000010408 film Substances 0.000 description 38
- 239000007789 gas Substances 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 15
- 230000004048 modification Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- 239000000428 dust Substances 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- 230000005684 electric field Effects 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229920001971 elastomer Polymers 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 amorphous silicon Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-123404 | 2016-06-22 | ||
| JP2016123404 | 2016-06-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201805990A TW201805990A (zh) | 2018-02-16 |
| TWI650790B true TWI650790B (zh) | 2019-02-11 |
Family
ID=60783507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106120722A TWI650790B (zh) | 2016-06-22 | 2017-06-21 | 電漿處理裝置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6564946B2 (ja) |
| KR (1) | KR102242988B1 (ja) |
| CN (1) | CN109477221B (ja) |
| TW (1) | TWI650790B (ja) |
| WO (1) | WO2017221829A1 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416046B (zh) * | 2018-04-27 | 2022-03-11 | 中微半导体设备(上海)股份有限公司 | 一种极板间距可调容性耦合等离子体处理系统及其方法 |
| JP7186393B2 (ja) * | 2018-12-06 | 2022-12-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN113424291B (zh) | 2018-12-20 | 2024-03-22 | Asml荷兰有限公司 | 平台装置 |
| KR102666641B1 (ko) * | 2019-03-21 | 2024-05-20 | 주성엔지니어링(주) | 기판 처리 장치 |
| JP7245107B2 (ja) * | 2019-04-23 | 2023-03-23 | 株式会社アルバック | プラズマ処理装置 |
| KR20210148406A (ko) * | 2019-04-29 | 2021-12-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 접지 스트랩 조립체들 |
| KR102378330B1 (ko) * | 2019-10-11 | 2022-03-24 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| JP7492900B2 (ja) | 2020-10-29 | 2024-05-30 | 株式会社アルバック | プラズマ処理装置 |
| US20230243035A1 (en) * | 2022-01-28 | 2023-08-03 | Applied Materials, Inc. | Ground return for thin film formation using plasma |
| CN115881506B (zh) * | 2023-03-02 | 2023-06-27 | 深圳市新凯来技术有限公司 | 等离子体调节装置及半导体刻蚀设备 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201031284A (en) * | 2008-10-09 | 2010-08-16 | Applied Materials Inc | RF return path for large plasma processing chamber |
| TW201033402A (en) * | 2009-02-04 | 2010-09-16 | Applied Materials Inc | Ground return for plasma processes |
| CN102272895A (zh) * | 2009-01-09 | 2011-12-07 | 株式会社爱发科 | 等离子体处理装置 |
| JP2012028682A (ja) * | 2010-07-27 | 2012-02-09 | Mitsubishi Electric Corp | プラズマ装置およびこれを用いた半導体薄膜の製造方法 |
| US20130102133A1 (en) * | 2011-10-21 | 2013-04-25 | Applied Materials, Inc. | Method and apparatus for fabricating silicon heterojunction solar cells |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8080479B2 (en) * | 2007-01-30 | 2011-12-20 | Applied Materials, Inc. | Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonator |
| CN102027574B (zh) * | 2008-02-08 | 2014-09-10 | 朗姆研究公司 | 等离子体处理室部件的保护性涂层及其使用方法 |
| CN102460649B (zh) * | 2009-05-13 | 2015-03-11 | 应用材料公司 | 经阳极处理的喷头 |
| CN103871819A (zh) * | 2012-12-12 | 2014-06-18 | 应用材料公司 | 用于高均匀性hjt形成的大尺寸腔室 |
-
2017
- 2017-06-16 KR KR1020187037702A patent/KR102242988B1/ko active IP Right Grant
- 2017-06-16 JP JP2018524035A patent/JP6564946B2/ja active Active
- 2017-06-16 WO PCT/JP2017/022313 patent/WO2017221829A1/ja active Application Filing
- 2017-06-16 CN CN201780036633.XA patent/CN109477221B/zh active Active
- 2017-06-21 TW TW106120722A patent/TWI650790B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201031284A (en) * | 2008-10-09 | 2010-08-16 | Applied Materials Inc | RF return path for large plasma processing chamber |
| CN102272895A (zh) * | 2009-01-09 | 2011-12-07 | 株式会社爱发科 | 等离子体处理装置 |
| TW201033402A (en) * | 2009-02-04 | 2010-09-16 | Applied Materials Inc | Ground return for plasma processes |
| JP2012028682A (ja) * | 2010-07-27 | 2012-02-09 | Mitsubishi Electric Corp | プラズマ装置およびこれを用いた半導体薄膜の製造方法 |
| US20130102133A1 (en) * | 2011-10-21 | 2013-04-25 | Applied Materials, Inc. | Method and apparatus for fabricating silicon heterojunction solar cells |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102242988B1 (ko) | 2021-04-20 |
| TW201805990A (zh) | 2018-02-16 |
| WO2017221829A1 (ja) | 2017-12-28 |
| JPWO2017221829A1 (ja) | 2018-11-29 |
| KR20190019965A (ko) | 2019-02-27 |
| CN109477221B (zh) | 2020-12-29 |
| JP6564946B2 (ja) | 2019-08-21 |
| CN109477221A (zh) | 2019-03-15 |
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