TWI646156B - Curable polyoxynoxy composition and optical semiconductor device - Google Patents

Curable polyoxynoxy composition and optical semiconductor device Download PDF

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TWI646156B
TWI646156B TW103135264A TW103135264A TWI646156B TW I646156 B TWI646156 B TW I646156B TW 103135264 A TW103135264 A TW 103135264A TW 103135264 A TW103135264 A TW 103135264A TW I646156 B TWI646156 B TW I646156B
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宮本侑典
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道康寧東麗股份有限公司
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Abstract

本發明之硬化性聚矽氧組合物對光半導體裝置中之光半導體元件、引線框架、基板、接合線等具有優異之接著性,且至少包含:(A)有機聚矽氧烷,其係一分子中具有至少2個與矽原子鍵結之烯基;(B)有機氫化聚矽氧烷,其係一分子中具有至少2個與矽原子鍵結之氫原子;(C)三唑系化合物;(D)金屬系縮合反應觸媒;及(E)矽氫化反應用觸媒。又,本發明之光半導體裝置係其光半導體元件由上述組合物之硬化物密封或被覆,且吸濕回焊試驗後之可靠性優異。 The curable polysiloxane composition of the present invention has excellent adhesion to optical semiconductor elements, lead frames, substrates, bonding wires, and the like in optical semiconductor devices, and includes at least: (A) organic polysiloxane, which is a Has at least 2 alkenyl groups bonded to silicon atoms in the molecule; (B) Organic hydrogenated polysiloxane, which has at least 2 hydrogen atoms bonded to silicon atoms in one molecule; (C) Triazole compounds (D) metal-based condensation reaction catalyst; and (E) catalyst for hydrosilylation reaction. The optical semiconductor device of the present invention is an optical semiconductor device in which the optical semiconductor device is sealed or coated with a cured product of the composition, and has excellent reliability after a moisture absorption reflow test.

Description

硬化性聚矽氧組合物及光半導體裝置 Curable polysiloxane composition and optical semiconductor device

本發明係關於一種硬化性聚矽氧組合物及使用該組合物之光半導體裝置。 The present invention relates to a curable polysiloxane composition and an optical semiconductor device using the same.

矽氫化反應硬化性聚矽氧組合物由於形成耐候性、耐熱性等特性優異之硬化物,尤其是藉由加熱而快速硬化,且硬化時不會產生副產物,故而被用作光電耦合器、發光二極體、固體攝像元件等光半導體裝置之密封劑、保護劑或接著劑。 The hydrosilylation reaction-hardening polysilicone composition is used as a photocoupler because it forms a hardened material with excellent weather resistance, heat resistance, and other properties. It is rapidly hardened by heating and does not produce by-products during hardening. Sealant, protector, or adhesive for optical semiconductor devices such as light-emitting diodes and solid-state imaging devices.

然而,由於矽氫化反應硬化性聚矽氧組合物之接著性不足,故而例如日本專利特開2009-256603號公報中提出有如下硬化性聚矽氧組合物:其包含分子鏈兩末端具有乙烯基之直鏈狀有機聚矽氧烷、一分子中具有至少2個與矽原子鍵結之氫原子之有機氫化聚矽氧烷、金屬系縮合反應觸媒、鉑族金屬系加成反應觸媒、及含有至少2種選自烯基、烷氧基及環氧基中之官能基之有機聚矽氧烷接著賦予成分;又,日本專利特開2010-043136號公報中提出有如下硬化性聚矽氧組合物:其包含具有至少2個與矽原子鍵結之烯基之聚矽氧烷、具有至少2個與矽原子鍵結之氫原子之聚矽氧烷交聯劑、及選自由具有碳原子數3以上之有機基之有機鋯化合物、有機鋅化合物、有機鎂化合物及有機鉀化合物所組成之群中之至少1種有機金屬化合物。 However, due to the insufficient adhesiveness of the hydrosilylation-curable polysiloxane composition, for example, Japanese Patent Laid-Open No. 2009-256603 proposes a hardenable polysiloxane composition containing vinyl groups at both ends of a molecular chain A linear organic polysiloxane, an organic hydrogenated polysiloxane having at least two hydrogen atoms bonded to silicon atoms in one molecule, a metal-based condensation reaction catalyst, a platinum group metal-based addition reaction catalyst, And an organopolysiloxane containing at least two functional groups selected from the group consisting of alkenyl, alkoxy, and epoxy groups, and then a component; and Japanese Patent Laid-Open No. 2010-043136 proposes the following hardening polysilicon Oxygen composition: It comprises a polysiloxane having at least 2 alkenyl groups bonded to a silicon atom, a polysiloxane crosslinking agent having at least 2 hydrogen atoms bonded to a silicon atom, and a member selected from the group consisting of At least one organometallic compound in the group consisting of an organic zirconium compound, an organic zinc compound, an organic magnesium compound, and an organic potassium compound having an atomic number of 3 or more.

然而,存在如下問題:即便是該等硬化性聚矽氧組合物,對光半導體裝置中之光半導體元件、引線框架、基板、接合線等之接著性亦不充分,若對使用上述組合物而獲得之光半導體裝置進行吸濕回焊試驗,則於光半導體元件、引線框架、基板或接合線與上述組合物之硬化物之間產生剝離。 However, there is a problem that, even with such a hardening polysiloxane composition, the adhesiveness to optical semiconductor elements, lead frames, substrates, bonding wires, and the like in optical semiconductor devices is insufficient. When the obtained optical semiconductor device is subjected to a moisture absorption reflow test, peeling occurs between the optical semiconductor element, the lead frame, the substrate, or the bonding wire and the cured product of the composition.

另一方面,日本專利特開2009-215434號公報中提出有如下硬化性聚矽氧組合物:其含有一分子中具有至少2個脂肪族不飽和鍵且不含有芳香族烴基之有機聚矽氧烷、一分子中具有至少2個與矽原子鍵結之氫原子之有機氫化聚矽氧烷、鉑族金屬系觸媒、及相對於上述有機聚矽氧烷與上述有機氫化聚矽氧烷之合計100質量份為0.05~5質量份之苯并三唑系、三系、二苯甲酮系、苯甲酸酯系、受阻胺系之光劣化防止劑。 On the other hand, Japanese Patent Application Laid-Open No. 2009-215434 proposes a curable polysiloxane composition containing an organic polysiloxane having at least two aliphatic unsaturated bonds in one molecule and not containing an aromatic hydrocarbon group. Alkanes, organic hydrogenated polysiloxanes having at least two hydrogen atoms bonded to silicon atoms in one molecule, platinum group metal-based catalysts, and the organic polysiloxanes and organic hydrogenated polysiloxanes A total of 100 parts by mass of 0.05 to 5 parts by mass of benzotriazole-based Based, benzophenone based, benzoate based, hindered amine based photodegradation inhibitors.

然而,該硬化性聚矽氧組合物亦存在對光半導體裝置中之光半導體元件、引線框架、基板、接合線等之接著性不充分之問題。 However, this curable polysiloxane composition also has a problem of insufficient adhesion to optical semiconductor elements, lead frames, substrates, bonding wires, and the like in optical semiconductor devices.

[先前技術文獻] [Prior technical literature] [專利文獻] [Patent Literature]

專利文獻1:日本專利特開2009-256603號公報 Patent Document 1: Japanese Patent Laid-Open No. 2009-256603

專利文獻2:日本專利特開2010-043136號公報 Patent Document 2: Japanese Patent Laid-Open No. 2010-043136

專利文獻3:日本專利特開2009-215434號公報 Patent Document 3: Japanese Patent Laid-Open No. 2009-215434

本發明之目的在於提供一種對光半導體裝置中之光半導體元件、引線框架、基板、接合線等之接著性較為良好之硬化性聚矽氧組合物,又,本發明之另一目的在於提供一種吸濕回焊試驗後之可靠性優異之光半導體裝置。 An object of the present invention is to provide a hardenable polysilicone composition having good adhesion to an optical semiconductor element, a lead frame, a substrate, a bonding wire, etc. in an optical semiconductor device, and another object of the present invention is to provide a Optical semiconductor device with excellent reliability after moisture absorption reflow test.

本發明之硬化性聚矽氧組合物之特徵在於至少包含:(A)有機聚矽氧烷,其係一分子中具有至少2個與矽原子鍵結之烯基;(B)有機氫化聚矽氧烷,其係一分子中具有至少2個與矽原子鍵結之氫原子{相對於(A)成分中之與矽原子鍵結之烯基1莫耳,本成分中之與矽原子鍵結之氫原子成為0.1~10莫耳之量};(C)三唑系化合物(相對於本組合物,以質量單位計成為1ppm~0.5%之量);(D)金屬系縮合反應觸媒(相對於本組合物,以質量單位計成為20ppm~0.1%之量);及(E)矽氫化反應用觸媒(促進本組合物之硬化之量)。 The curable polysiloxane composition of the present invention is characterized in that it comprises at least: (A) an organic polysiloxane, which has at least two alkenyl groups bonded to silicon atoms in one molecule; (B) an organic hydrogenated polysiloxane Oxane, which has at least 2 hydrogen atoms bonded to silicon atoms in a molecule {relative to 1 mol of the alkenyl group bonded to silicon atoms in (A) component, and silicon atoms in this component are bonded to silicon atoms The amount of hydrogen atoms becomes 0.1 to 10 moles}; (C) a triazole-based compound (relative to the composition, an amount of 1 ppm to 0.5% by mass unit); (D) a metal-based condensation reaction catalyst ( (Equivalent to 20 ppm to 0.1% by mass unit with respect to the composition); and (E) a catalyst for a hydrosilylation reaction (amount to promote hardening of the composition).

上述(A)成分較佳為(A-1)通式:R1 3SiO(R1 2SiO)mSiR1 3 The component (A) is preferably a general formula (A-1): R 1 3 SiO (R 1 2 SiO) m SiR 1 3

(式中,R1為相同或不同之一價烴基,其中,一分子中至少2個R1為烯基,m為5~1,000之整數) (In the formula, R 1 is the same or different monovalent hydrocarbon group, in which at least two R 1 in an molecule are alkenyl groups, and m is an integer of 5 to 1,000)

所表示之直鏈狀之有機聚矽氧烷及/或(A-2)平均單元式:(R1SiO3/2)a(R1 2SiO2/2)b(R1 3SiO1/2)c(SiO4/2)d(XO1/2)e Straight-chain organic polysiloxane and / or (A-2) average unit formula: (R 1 SiO 3/2 ) a (R 1 2 SiO 2/2 ) b (R 1 3 SiO 1 / 2 ) c (SiO 4/2 ) d (XO 1/2 ) e

(式中,R1與上述相同,其中,R1之合計之0.01~50莫耳%為烯基,X為氫原子或烷基,a、b、c、d及e係滿足0≦a≦1.0、0≦b≦1.0、0≦c<0.9、0≦d<0.5、0≦e<0.4且a+b+c+d=1.0之數) (In the formula, R 1 is the same as the above, wherein 0.01 to 50 mole% of the total of R 1 is an alkenyl group, X is a hydrogen atom or an alkyl group, and a, b, c, d, and e satisfy 0 ≦ a ≦ 1.0, 0 ≦ b ≦ 1.0, 0 ≦ c <0.9, 0 ≦ d <0.5, 0 ≦ e <0.4, and a + b + c + d = 1.0

所表示之支鏈狀之有機聚矽氧烷。 The branched organic polysiloxane shown.

上述(C)成分較佳為苯并三唑系化合物,尤佳為選自由苯并三唑、甲苯并三唑、羧基苯并三唑、1H-苯并三唑-5-羧酸甲酯及硝基苯并三唑所組成之群中之至少1種苯并三唑系化合物。 The component (C) is preferably a benzotriazole-based compound, and particularly preferably selected from the group consisting of benzotriazole, tolutriazole, carboxybenzotriazole, 1H-benzotriazole-5-carboxylic acid methyl ester, and At least one benzotriazole compound in the group consisting of nitrobenzotriazole.

上述(D)成分較佳為選自由有機鋁化合物、有機鈦化合物、有機鋯化合物、有機鋅化合物及有機鐵化合物所組成之群中之至少1種有 機金屬化合物。 The component (D) is preferably at least one selected from the group consisting of an organic aluminum compound, an organic titanium compound, an organic zirconium compound, an organic zinc compound, and an organic iron compound. Organic metal compounds.

本發明之硬化性聚矽氧組合物較佳為光半導體裝置之密封劑或被覆劑。 The curable polysiloxane composition of the present invention is preferably a sealing agent or a coating agent for an optical semiconductor device.

本發明之光半導體裝置之特徵在於光半導體元件藉由上述之硬化性聚矽氧組合物之硬化物密封或被覆,且上述光半導體元件較佳為發光二極體。 The optical semiconductor device of the present invention is characterized in that the optical semiconductor element is sealed or covered by the hardened material of the above-mentioned curable polysiloxane composition, and the optical semiconductor element is preferably a light emitting diode.

本發明之硬化性聚矽氧組合物之特徵在於對光半導體裝置中之光半導體元件、引線框架、基板、接合線等具有優異之接著性。又,本發明之光半導體裝置之特徵在於吸濕回焊試驗後之可靠性優異。 The curable polysiloxane composition of the present invention is characterized by having excellent adhesion to an optical semiconductor element, a lead frame, a substrate, a bonding wire, and the like in an optical semiconductor device. The optical semiconductor device of the present invention is characterized by excellent reliability after a moisture absorption reflow test.

1‧‧‧光半導體元件 1‧‧‧optical semiconductor element

2‧‧‧引線框架 2‧‧‧lead frame

3‧‧‧引線框架 3‧‧‧lead frame

4‧‧‧接合線 4‧‧‧ bonding wire

5‧‧‧反射材料 5‧‧‧ reflective material

6‧‧‧硬化性聚矽氧組合物之硬化物 6‧‧‧ Hardened product of hardening polysiloxane composition

圖1係作為本發明之光半導體裝置之一例之LED的剖面圖。 FIG. 1 is a cross-sectional view of an LED as an example of an optical semiconductor device of the present invention.

首先,詳細地說明本發明之硬化性聚矽氧組合物。 First, the curable polysiloxane composition of the present invention will be described in detail.

(A)成分係作為本組合物之主劑之一分子中具有至少2個與矽原子鍵結之烯基的有機聚矽氧烷。作為該烯基,可例示:乙烯基、烯丙基、丁烯基、戊烯基、己烯基、庚烯基、辛烯基、壬烯基、癸烯基、十一烯基、十二烯基等碳數為2~12個之烯基,較佳為乙烯基。又,作為(A)成分中之除烯基以外之與矽原子鍵結之基,可例示:甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、戊基、新戊基、己基、環己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基等碳數為1~12個之烷基;苯基、甲苯基、二甲苯基、萘基等碳數為6~20個之芳基;苄基、苯乙基、苯基丙基等碳數為7~20個之芳烷基;及藉由氟原子、氯原子、溴原子等鹵素原子取代該等基之氫原子之一部分或全部而成之基。再者,於無損本發明之目的之範圍內,(A)成分中之矽原子上亦可具有少量之羥基或甲氧基、乙氧基等烷氧基。 (A) The component is an organopolysiloxane having at least two alkenyl groups bonded to a silicon atom in one molecule as a main agent of the composition. Examples of the alkenyl group include vinyl, allyl, butenyl, pentenyl, hexenyl, heptenyl, octenyl, nonenyl, decenyl, undecenyl, and dodecyl An alkenyl group having 2 to 12 carbon atoms, such as an alkenyl group, is preferably a vinyl group. Examples of the (A) component other than the alkenyl group bonded to the silicon atom include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, third butyl, Alkyl, neopentyl, hexyl, cyclohexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl and other alkyl groups having 1 to 12 carbons; phenyl, tolyl , Xylyl, naphthyl and other aryl groups having 6 to 20 carbon atoms; benzyl, phenethyl, phenylpropyl and other arylalkyl groups having 7 to 20 carbon atoms; and by means of fluorine atom, chlorine A group in which a halogen atom such as an atom or a bromine atom is substituted for part or all of the hydrogen atoms of these groups. Moreover, as long as the objective of this invention is not impaired, the silicon atom in (A) component may have a small amount of hydroxyl groups, alkoxy groups, such as a methoxy group and an ethoxy group.

作為(A)成分之分子結構,可例示直鏈狀、一部分具有分支之直鏈狀、支鏈狀、環狀及三維網狀結構。(A)成分亦可為具有該等分子結構之1種有機聚矽氧烷、或具有該等分子結構之2種以上之有機聚矽氧烷混合物。 Examples of the molecular structure of the component (A) include a linear structure, a linear structure having a branch, a branched structure, a cyclic structure, and a three-dimensional network structure. The component (A) may be one type of organic polysiloxane having these molecular structures, or a mixture of two or more types of organic polysiloxane having such molecular structures.

此種(A)成分較佳為(A-1)通式:R1 3SiO(R1 2SiO)mSiR1 3 Such (A) component is preferably (A-1) General formula: R 1 3 SiO (R 1 2 SiO) m SiR 1 3

所表示之直鏈狀之有機聚矽氧烷及/或(A-2)平均單元式:(R1SiO3/2)a(R1 2SiO2/2)b(R1 3SiO1/2)c(SiO4/2)d(XO1/2)e Straight-chain organic polysiloxane and / or (A-2) average unit formula: (R 1 SiO 3/2 ) a (R 1 2 SiO 2/2 ) b (R 1 3 SiO 1 / 2 ) c (SiO 4/2 ) d (XO 1/2 ) e

所表示之支鏈狀之有機聚矽氧烷。 The branched organic polysiloxane shown.

於(A-1)成分中,式中,R1為相同或不同之一價烴基,可例示與上述相同之烷基、烯基、芳基、芳烷基、及藉由氟原子、氯原子、溴原子等鹵素原子取代該等基之氫原子之一部分或全部而成之基。其中,一分子中至少2個R1為烯基。又,式中,m為5~1,000之整數,較佳為50~1,000之整數或100~1,000之整數。 In the component (A-1), in the formula, R 1 is the same or different monovalent hydrocarbon group, and examples thereof include the same alkyl group, alkenyl group, aryl group, aralkyl group, and fluorine atom and chlorine atom. A group in which a halogen atom such as a bromine atom is substituted for part or all of the hydrogen atoms of these groups. Among them, at least two R 1 in one molecule are alkenyl. In the formula, m is an integer of 5 to 1,000, preferably an integer of 50 to 1,000 or an integer of 100 to 1,000.

作為此種(A-1)成分,可例示:分子鏈兩末端經二甲基乙烯基矽烷氧基封阻之二甲基聚矽氧烷、分子鏈兩末端經二甲基乙烯基矽烷氧基封阻之二甲基矽氧烷-甲基乙烯基矽氧烷共聚物、分子鏈兩末端經二甲基乙烯基矽烷氧基封阻之二甲基矽氧烷-甲基苯基矽氧烷共聚物、分子鏈兩末端經二甲基乙烯基矽烷氧基封阻之甲基苯基聚矽氧烷、分子鏈兩末端經三甲基矽烷氧基封阻之二甲基矽氧烷-甲基乙烯基矽氧烷共聚物、分子鏈兩末端經三甲基矽烷氧基封阻之二甲基矽氧烷-甲基乙烯基矽氧烷-甲基苯基矽氧烷共聚物及該等2種以上之混合物。 Examples of such a component (A-1) include dimethyl polysiloxane blocked at both ends of the molecular chain with dimethylvinylsiloxy, and dimethylvinylsiloxy at both ends of the molecular chain. Blocked dimethylsiloxane-methylvinylsiloxane copolymer, dimethylsiloxane-methylphenylsiloxane blocked at both ends of the molecular chain by dimethylvinylsiloxy Copolymer, methylphenyl polysiloxane blocked at both ends of molecular chain with dimethylvinylsiloxy, dimethylsiloxane-methyl blocked at both ends of molecular chain with trimethylsiloxy Vinylvinylsiloxane copolymer, dimethylsiloxane-methylvinylsiloxane-methylphenylsiloxane copolymer blocked at both ends of molecular chain by trimethylsiloxy group, and the like A mixture of two or more.

又,於(A-2)成分中,式中,R1為相同或不同之一價烴基,可例示與上述相同之烷基、烯基、芳基、芳烷基、及藉由氟原子、氯原子、溴原子等鹵素原子取代該等基之氫原子之一部分或全部而成之 基。其中,較佳為R1之合計之0.01~50莫耳%、0.05~40莫耳%或0.09~32莫耳%為烯基。其原因在於:若烯基之比率為上述範圍之下限以上,則所獲得之組合物之硬化性較為良好,另一方面,若烯基之比率為上述範圍之上限以下,則所獲得之硬化物之機械特性較為良好。再者,烯基之含量例如可藉由傅立葉變換紅外分光光度計(FT-IR)、核磁共振(NMR)、凝膠滲透層析法(GPC)等之分析而求出。 In the component (A-2), in the formula, R 1 is the same or different monovalent hydrocarbon group, and examples thereof include the same alkyl group, alkenyl group, aryl group, aralkyl group, and fluorine atom, A group in which a halogen atom such as a chlorine atom or a bromine atom replaces part or all of the hydrogen atoms of these groups. Among them, 0.01 to 50 mole%, 0.05 to 40 mole%, or 0.09 to 32 mole% of the total of R 1 is preferably an alkenyl group. The reason is that if the ratio of the alkenyl group is above the lower limit of the above range, the hardenability of the obtained composition is good. On the other hand, if the ratio of the alkenyl group is below the upper limit of the above range, the hardened product obtained The mechanical properties are relatively good. The content of the alkenyl group can be determined, for example, by analysis of a Fourier transform infrared spectrophotometer (FT-IR), nuclear magnetic resonance (NMR), or gel permeation chromatography (GPC).

又,式中,X為氫原子或烷基。作為該烷基,可例示:甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、戊基、新戊基、己基、環己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基等碳數為1~12個之烷基,較佳為碳數1~3之烷基。 In the formula, X is a hydrogen atom or an alkyl group. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, third butyl, pentyl, neopentyl, hexyl, cyclohexyl, heptyl, and octyl. , Nonyl, decyl, undecyl, dodecyl and the like having an alkyl group having 1 to 12 carbon atoms, and preferably an alkyl group having 1 to 3 carbon atoms.

又,式中,a係表示式:R1SiO3/2所表示之矽氧烷單元之比率,且滿足0≦a≦1.0之數,b係表示式:R1 2SiO2/2所表示之矽氧烷單元之比率,且滿足0≦b≦1.0之數,c係表示式:R1 3SiO1/2所表示之矽氧烷單元之比率,且滿足0≦c<0.9之數,d係表示式:SiO4/2所表示之矽氧烷單元之比率,且滿足0≦d<0.5之數。其中,式中,a+b+c+d=1.0。又,e係表示與矽原子鍵結之羥基或烷氧基,且滿足0≦e<0.4之數。 In the formula, a is the ratio of the siloxane units represented by R 1 SiO 3/2 and satisfies the number of 0 ≦ a ≦ 1.0, and b is the formula: R 1 2 SiO 2/2 The ratio of siloxane units, and satisfies the number of 0 ≦ b ≦ 1.0, c is the expression: the ratio of siloxane units represented by R 1 3 SiO 1/2 , and satisfies the number of 0 ≦ c <0.9, d is the expression: the ratio of the siloxane units represented by SiO 4/2 , and satisfies the number of 0 ≦ d <0.5. In the formula, a + b + c + d = 1.0. In addition, e represents a hydroxyl group or an alkoxy group bonded to a silicon atom, and satisfies the number of 0 ≦ e <0.4.

作為(A)成分,可使用(A-1)成分、(A-2)成分或(A-1)成分與(A-2)成分之混合物。於使用(A-1)成分與(A-2)成分之混合物之情形時,就所獲得之組合物之操作性較為良好而言,(A-2)成分之含量較佳為(A-1)成分與(A-2)成分之合計量之90質量%以下或60質量%以下。又,就所獲得之硬化物之機械特性較為良好而言,(A-2)成分之含量較佳為(A-1)成分與(A-2)成分之合計量之至少10質量%。 As (A) component, (A-1) component, (A-2) component, or a mixture of (A-1) component and (A-2) component can be used. In the case where a mixture of the (A-1) component and the (A-2) component is used, the content of the (A-2) component is preferably (A-1) in terms of better operability of the obtained composition ) And 90% by mass or less of the total amount of the component (A-2) or 60% by mass or less. In addition, in terms of the mechanical properties of the obtained hardened material being relatively good, the content of the (A-2) component is preferably at least 10% by mass of the total amount of the (A-1) component and the (A-2) component.

(A)成分於25℃下為液狀或固體狀。於(A)成分於25℃下為液狀之情形時,其25℃之黏度較佳為1~1,000,000mPa‧s之範圍內或10~1,000,000mPa‧s之範圍內。再者,該黏度例如可藉由使用依據JIS K7117-1之B型黏度計之測定而求出。 The component (A) is liquid or solid at 25 ° C. When the component (A) is liquid at 25 ° C, its viscosity at 25 ° C is preferably in the range of 1 to 1,000,000 mPa · s or in the range of 10 to 1,000,000 mPa · s. In addition, the viscosity can be based on JIS, for example, by using Measured by K7117-1 type B viscometer.

(B)成分係作為本組合物之交聯劑之一分子中具有至少2個與矽原子鍵結之氫原子的有機氫化聚矽氧烷。作為(B)成分中之除氫原子以外之與矽原子鍵結之基,可例示:甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、戊基、新戊基、己基、環己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基等碳數為1~12個之烷基;苯基、甲苯基、二甲苯基、萘基等碳數為6~20個之芳基;苄基、苯乙基、苯基丙基等碳數為7~20個之芳烷基;及藉由氟原子、氯原子、溴原子等鹵素原子取代該等基之氫原子之一部分或全部而成之基。再者,於無損本發明之目的之範圍內,(B)成分中之矽原子上亦可具有少量之羥基或甲氧基、乙氧基等烷氧基。 (B) The component is an organohydrogenpolysiloxane having at least two hydrogen atoms bonded to silicon atoms in one molecule of the crosslinking agent of the composition. Examples of the group bonded to the silicon atom other than the hydrogen atom in the component (B) include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, third butyl, and pentyl , Neopentyl, hexyl, cyclohexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl and other alkyl groups having 1 to 12 carbons; phenyl, tolyl, di Aryl groups having 6 to 20 carbons such as tolyl and naphthyl; aralkyl groups having 7 to 20 carbons such as benzyl, phenethyl, and phenylpropyl; and fluorine, chlorine, and A group in which a halogen atom such as a bromine atom replaces part or all of the hydrogen atoms of these groups. Moreover, as long as the objective of this invention is not impaired, the silicon atom in (B) component may have a small amount of hydroxy groups, alkoxy groups, such as a methoxy group and an ethoxy group.

作為(B)成分之分子結構,可例示直鏈狀、一部分具有分支之直鏈狀、支鏈狀、環狀及三維網狀結構,較佳為一部分具有分支之直鏈狀、支鏈狀或三維網狀結構。 As the molecular structure of the component (B), linear, branched linear, branched, cyclic, and three-dimensional network structures may be exemplified, and branched linear, branched, or Three-dimensional network structure.

(B)成分於25℃下為固體狀或液狀。於(B)成分於25℃下為液狀之情形時,其25℃之黏度較佳為10,000mPa‧s以下、0.1~5,000mPa‧s之範圍內、或0.5~1,000mPa‧s之範圍內。再者,該黏度例如可藉由使用依據JIS K7117-1之B型黏度計之測定而求出。 (B) The component is solid or liquid at 25 degreeC. When the component (B) is liquid at 25 ° C, the viscosity at 25 ° C is preferably 10,000 mPa · s or less, within the range of 0.1 to 5,000 mPa · s, or within the range of 0.5 to 1,000 mPa · s . The viscosity can be determined by, for example, measurement using a B-type viscometer according to JIS K7117-1.

作為此種(B)成分,可例示:1,1,3,3-四甲基二矽氧烷、1,3,5,7-四甲基環四矽氧烷、三(二甲基氫矽烷氧基)甲基矽烷、三(二甲基氫矽烷氧基)苯基矽烷、1-縮水甘油氧基丙基-1,3,5,7-四甲基環四矽氧烷、1,5-縮水甘油氧基丙基-1,3,5,7-四甲基環四矽氧烷、1-縮水甘油氧基丙基-5-三甲氧基矽烷基乙基-1,3,5,7-四甲基環四矽氧烷、分子鏈兩末端經三甲基矽烷氧基封阻之甲基氫聚矽氧烷、分子鏈兩末端經三甲基矽烷氧基封阻之二甲基矽氧烷-甲基氫矽氧烷共聚物、分子鏈兩末端經二甲基氫矽烷氧基封阻之二甲基聚矽氧烷、分子鏈兩末端經二甲基氫 矽烷氧基封阻之二甲基矽氧烷-甲基氫矽氧烷共聚物、分子鏈兩末端經三甲基矽烷氧基封阻之甲基氫矽氧烷-二苯基矽氧烷共聚物、分子鏈兩末端經三甲基矽烷氧基封阻之甲基氫矽氧烷-二苯基矽氧烷-二甲基矽氧烷共聚物、包含(CH3)2HSiO1/2單元及SiO4/2單元之共聚物、包含(CH3)2HSiO1/2單元、SiO4/2單元及(C6H5)SiO3/2單元之共聚物及該等2種以上之混合物。 Examples of such (B) component include 1,1,3,3-tetramethyldisilazane, 1,3,5,7-tetramethylcyclotetrasiloxane, and tris (dimethyl hydrogen). (Silyloxy) methylsilane, tris (dimethylhydrosilyloxy) phenylsilane, 1-glycidoxypropyl-1,3,5,7-tetramethylcyclotetrasiloxane, 1, 5-glycidoxypropyl-1,3,5,7-tetramethylcyclotetrasiloxane, 1-glycidoxypropyl-5-trimethoxysilylethyl-1,3,5 , 7-tetramethylcyclotetrasiloxane, methyl hydrogen polysiloxane blocked at both ends of the molecular chain by trimethylsiloxy, dimethyl blocked at both ends of the molecular chain by trimethylsiloxy Siloxane-methylhydrosiloxane copolymer, dimethyl polysiloxane blocked at both ends of the molecular chain with dimethylhydrosiloxy, dimethylhydrosiloxy blocked at both ends of the molecular chain Dimethyl siloxane-methyl hydrosiloxane copolymer, methyl siloxane-diphenyl siloxane copolymer blocked at both ends of the molecular chain by trimethyl siloxane, molecular chain Methylhydrosilane-diphenylsilane-dimethylsilane copolymer blocked with trimethylsiloxy at both ends, containing (CH 3 ) 2 Copolymers of HSiO 1/2 units and SiO 4/2 units, copolymers containing (CH 3 ) 2 HSiO 1/2 units, SiO 4/2 units and (C 6 H 5 ) SiO 3/2 units, and these A mixture of two or more.

(B)成分之含量係相對於(A)成分中之與矽原子鍵結之烯基1莫耳,本成分中之與矽原子鍵結之氫原子成為0.1~10莫耳之量,較佳為成為0.5~5莫耳之量。其原因在於:若(B)成分之含量為上述範圍之上限以下,則所獲得之硬化物之機械特性較為良好,另一方面,若為上述範圍之下限以上,則所獲得之組合物之硬化性較為良好。再者,(B)成分中之與矽原子鍵結之氫原子之含量例如可藉由傅立葉變換紅外分光光度計(FT-IR)、核磁共振(NMR)、凝膠滲透層析法(GPC)等之分析而求出。 The content of the component (B) is 0.1 to 10 moles relative to the mole of the alkenyl group bonded to the silicon atom in the component (A). The amount is 0.5 to 5 moles. The reason is that if the content of the component (B) is below the upper limit of the above range, the mechanical properties of the obtained hardened material are relatively good. On the other hand, if it is above the lower limit of the above range, the hardened composition is hardened. Sex is better. The content of hydrogen atoms bonded to silicon atoms in the component (B) can be determined by, for example, a Fourier transform infrared spectrophotometer (FT-IR), nuclear magnetic resonance (NMR), or gel permeation chromatography (GPC). And so on.

(C)成分係對本組合物之硬化物賦予耐剝離性之三唑系化合物。作為(C)成分,可例示:1H-1,2,3-三唑、2H-1,2,3-三唑、1H-1,2,4-三唑、4H-1,2,4-三唑、2-(2'-羥基-5'-甲基苯基)苯并三唑、苯并三唑、甲苯并三唑、羧基苯并三唑、1H-苯并三唑-5-羧酸甲酯、3-胺基-1,2,4-三唑、4-胺基-1,2,4-三唑、5-胺基-1,2,4-三唑、3-巰基-1,2,4-三唑、氯苯并三唑、硝基苯并三唑、胺基苯并三唑、環己烷并[1,2-d]三唑、4,5,6,7-四羥基甲苯并三唑、1-羥基苯并三唑、乙基苯并三唑、萘并三唑、1-N,N-雙(2-乙基己基)-[(1,2,4-三唑-1-基)甲基]胺、1-[N,N-雙(2-乙基己基)胺基甲基]苯并三唑、1-[N,N-雙(2-乙基己基)胺基甲基]甲苯并三唑、1-[N,N-雙(2-乙基己基)胺基甲基]羧基苯并三唑、1-[N,N-雙(2-羥基乙基)-胺基甲基]苯并三唑、1-[N,N-雙(2-羥基乙基)-胺基甲基]甲苯并三唑、1-[N,N-雙(2-羥基乙基)-胺基甲基]羧基苯并三唑、1- [N,N-雙(2-羥基丙基)胺基甲基]羧基苯并三唑、1-[N,N-雙(1-丁基)胺基甲基]羧基苯并三唑、1-[N,N-雙(1-辛基)胺基甲基]羧基苯并三唑、1-(2',3'-二-羥基丙基)苯并三唑、1-(2',3'-二-羧基乙基)苯并三唑、2-(2'-羥基-3',5'-二第三丁基苯基)苯并三唑、2-(2'-羥基-3',5'-戊基苯基)苯并三唑、2-(2'-羥基-4'-辛氧基苯基)苯并三唑、2-(2'-羥基-5'-第三丁基苯基)苯并三唑、1-羥基苯并三唑-6-羧酸、1-油醯基苯并三唑、1,2,4-三唑-3-醇、5-胺基-3-巰基-1,2,4-三唑、5-胺基-1,2,4-三唑-3-羧酸、1,2,4-三唑-3-甲醯胺、4-胺基脲唑、1,2,4-三唑-5-酮及該等2種以上之混合物。(C)成分尤佳為苯并三唑、或經烷基、羧基或硝基取代之苯并三唑等苯并三唑系化合物,進而較佳為選自由苯并三唑、甲苯并三唑、羧基苯并三唑、硝基苯并三唑及1H-苯并三唑-5-羧酸甲酯所組成之群中之至少1種苯并三唑系化合物。 (C) A component is a triazole-type compound which provides peeling resistance to the hardened | cured material of this composition. Examples of the component (C) include 1H-1,2,3-triazole, 2H-1,2,3-triazole, 1H-1,2,4-triazole, and 4H-1,2,4- Triazole, 2- (2'-hydroxy-5'-methylphenyl) benzotriazole, benzotriazole, tolutriazole, carboxybenzotriazole, 1H-benzotriazole-5-carboxyl Methyl ester, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, 5-amino-1,2,4-triazole, 3-mercapto- 1,2,4-triazole, chlorobenzotriazole, nitrobenzotriazole, aminobenzotriazole, cyclohexane [1,2-d] triazole, 4,5,6,7 -Tetrahydroxytolutriazole, 1-hydroxybenzotriazole, ethylbenzotriazole, naphthotriazole, 1-N, N-bis (2-ethylhexyl)-[(1,2,4 -Triazol-1-yl) methyl] amine, 1- [N, N-bis (2-ethylhexyl) aminomethyl] benzotriazole, 1- [N, N-bis (2-ethyl Hexyl) aminomethyl] tolutriazole, 1- [N, N-bis (2-ethylhexyl) aminomethyl] carboxybenzotriazole, 1- [N, N-bis (2- Hydroxyethyl) -aminomethyl] benzotriazole, 1- [N, N-bis (2-hydroxyethyl) -aminomethyl] tolutriazole, 1- [N, N-bis ( 2-hydroxyethyl) -aminomethyl] carboxybenzotriazole, 1- [N, N-bis (2-hydroxypropyl) aminomethyl] carboxybenzotriazole, 1- [N, N-bis (1-butyl) aminomethyl] carboxybenzotriazole, 1 -[N, N-bis (1-octyl) aminomethyl] carboxybenzotriazole, 1- (2 ', 3'-di-hydroxypropyl) benzotriazole, 1- (2', 3'-di-carboxyethyl) benzotriazole, 2- (2'-hydroxy-3 ', 5'-di-third-butylphenyl) benzotriazole, 2- (2'-hydroxy-3 ', 5'-pentylphenyl) benzotriazole, 2- (2'-hydroxy-4'-octyloxyphenyl) benzotriazole, 2- (2'-hydroxy-5'-third Butylphenyl) benzotriazole, 1-hydroxybenzotriazole-6-carboxylic acid, 1-oleylbenzobenzotriazole, 1,2,4-triazole-3-ol, 5-amino -3-mercapto-1,2,4-triazole, 5-amino-1,2,4-triazole-3-carboxylic acid, 1,2,4-triazole-3-carboxamide, 4- Aminoureazole, 1,2,4-triazol-5-one and a mixture of two or more of these. (C) The component is particularly preferably a benzotriazole-based compound such as benzotriazole or benzotriazole substituted with an alkyl group, a carboxyl group, or a nitro group, and more preferably selected from benzotriazole and tolutriazole. At least one benzotriazole compound in the group consisting of carboxybenzotriazole, nitrobenzotriazole, and 1H-benzotriazole-5-carboxylic acid methyl ester.

(C)成分之含量係相對於本組合物,以質量單位計成為1ppm~0.5%之範圍內之量,較佳為成為5ppm~0.3%之範圍內或10ppm~0.1%之範圍內之量。其原因在於:若(C)成分之含量為上述範圍之下限以上,則可充分地抑制由吸濕回焊引起之剝離,另一方面,若為上述範圍之上限以下,則所獲得之硬化物之機械特性較為良好。 The content of the component (C) is an amount in the range of 1 ppm to 0.5%, and preferably an amount in the range of 5 ppm to 0.3% or 10 ppm to 0.1% based on the composition. The reason is that if the content of the component (C) is above the lower limit of the above range, peeling caused by moisture absorption reflow can be sufficiently suppressed; on the other hand, if it is below the upper limit of the above range, the hardened product obtained The mechanical properties are relatively good.

(D)成分係對本組合物之硬化物賦予耐剝離性之金屬系縮合反應觸媒。作為(D)成分,可例示:有機鋁化合物、有機鈦化合物、有機鋯化合物、有機鎂化合物、有機鋅化合物、有機銅化合物、有機鎳化合物、有機鉻化合物、有機鈷化合物、有機鐵化合物、有機銦化合物、有機鑭化合物、有機錫化合物、有機鉿化合物及該等2種以上之混合物。作為有機鋁化合物,可例示:三甲氧基鋁、三乙氧基鋁、異丙氧基鋁、異丙氧基二乙氧基鋁、三丁氧基鋁等烷氧基化合物;三乙醯氧基鋁、三硬脂酸鋁、三丁酸鋁等醯氧基化合物;異丙酸鋁、第二丁酸鋁、第三丁酸鋁、三(乙醯乙酸乙酯)鋁、三(六氟乙醯丙酮)鋁、 三乙醯乙酸乙酯鋁、三(乙醯乙酸正丙酯)鋁、三(乙醯乙酸異丙酯)鋁、三(乙醯乙酸正丁酯)鋁、三水楊醛鋁、三(2-乙氧羰基苯酚)鋁、三(乙醯丙酮)鋁等螯合化合物。作為有機鈦化合物,可例示:四乙氧基鈦、四異丙氧基鈦、四丁氧基鈦等四烷氧基鈦;四乙二醇鈦酸酯、二正丁基雙(三乙醇胺)鈦酸酯、雙(乙醯丙酮)酸二異丙氧基鈦、辛酸異丙氧基鈦、三甲基丙烯酸異丙基鈦、三丙烯酸異丙基鈦、異丙基三異硬脂醯基鈦酸酯、異丙基十三烷基苯磺醯基鈦酸酯、異丙基三(丁基、甲基焦磷醯氧基)鈦酸酯、四異丙基二(二月桂基亞磷酸醯氧基)鈦酸酯、二甲基丙烯醯氧基乙酸酯鈦酸酯、二丙烯醯氧基乙酸酯鈦酸酯、二(二辛基磷醯氧基)鈦酸乙二酯、三(二辛基磷酸)異丙氧基鈦、異丙基三(二辛基焦磷醯氧基)鈦酸酯、四異丙基雙(二辛基亞磷醯氧基)鈦酸酯、四辛基雙(二-十三烷基亞磷醯氧基)鈦酸酯、四(2,2-二烯丙氧基甲基-1-丁基)雙(二-十三烷基亞磷醯氧基)鈦酸酯、雙(二辛基焦磷醯氧基)羥乙酸酯鈦酸酯、三(二辛基焦磷醯氧基)鈦酸乙二酯、異丙基三正十二烷基苯磺醯基鈦酸酯、異丙基三辛醯基鈦酸酯、異丙基二甲基丙烯醯基異硬脂醯基鈦酸酯、異丙基異硬脂醯基二丙烯醯基鈦酸酯、異丙基三(二辛基磷醯氧基)鈦酸酯、異丙基三異丙苯基苯基鈦酸酯、異丙基三(N-胺基乙基-胺基乙基)鈦酸酯。作為有機鋯化合物,可例示:鋯正丙氧化物、鋯正丁氧化物、鋯第三丁氧化物、鋯異丙氧化物、鋯乙氧化物、乙酸氧鋯、乙醯丙酮鋯、丁氧基乙醯丙酮鋯、雙乙醯丙酮鋯、乙醯乙酸乙酯鋯、雙乙醯乙酸乙酯乙醯丙酮鋯、六氟乙醯丙酮鋯、三氟乙醯丙酮鋯。作為有機鎂化合物,可例示:乙醯乙酸乙酯鎂單異丙酯、雙(乙醯乙酸乙酯)鎂、乙醯乙酸烷基酯鎂單異丙酯、雙(乙醯丙酮)鎂。作為有機鋅化合物,可例示:雙(乙醯乙酸乙酯)鋅、乙醯丙酮鋅、雙2-乙基己酸鋅、(甲基)丙烯酸鋅、新癸酸鋅、乙酸鋅、辛酸鋅、水楊酸鋅。作為有機銅化合物,可例示:雙(乙醯乙 酸乙酯)銅、雙(乙醯丙酮)銅。作為有機鎳化合物,可例示:雙(乙醯乙酸乙酯)鎳、雙(乙醯丙酮)鎳。作為有機鉻化合物,可例示:三(乙醯乙酸乙酯)鉻、三(乙醯丙酮)鉻。作為有機鈷化合物,可例示:三(乙醯乙酸乙酯)鈷、三(乙醯丙酮)鈷。作為有機鐵化合物,可例示:三(乙醯乙酸乙酯)鐵、三(乙醯丙酮)鐵。作為有機銦化合物,可例示:三(乙醯乙酸乙酯)銦、三(乙醯丙酮)銦。作為有機鑭化合物,可例示:三(乙醯乙酸乙酯)鑭、三(乙醯丙酮)鑭。作為有機錫化合物,可例示:四(乙醯乙酸乙酯)錫、四(乙醯丙酮)錫。作為有機鉿化合物,可例示:鉿正丁氧化物、鉿第三丁氧化物、鉿乙氧化物、鉿異丙氧化物、異丙醇鉿單異丙酯、乙醯丙酮鉿、四(二甲基胺基)鉿。(D)成分尤佳為選自由有機鋁化合物、有機鈦化合物、有機鋯化合物、有機鋅化合物及有機鐵化合物所組成之群中之至少1種金屬系縮合反應觸媒。 (D) A component is a metal-type condensation reaction catalyst which provides peeling resistance to the hardened | cured material of this composition. Examples of the component (D) include organic aluminum compounds, organic titanium compounds, organic zirconium compounds, organic magnesium compounds, organic zinc compounds, organic copper compounds, organic nickel compounds, organic chromium compounds, organic cobalt compounds, organic iron compounds, and organic compounds. Indium compounds, organic lanthanum compounds, organic tin compounds, organic rhenium compounds, and mixtures of two or more of these. Examples of the organoaluminum compound include alkoxy compounds such as trimethoxyaluminum, triethoxyaluminum, isopropoxyaluminum, isopropoxydiethoxyaluminum, and tributoxyaluminum; triethoxyfluoride Alkyloxy compounds such as aluminum, aluminum tristearate, aluminum tributyrate; aluminum isopropoxide, aluminum second butyrate, aluminum third butyrate, aluminum triacetate, ethyl triacetate Acetoacetone) aluminum, Aluminum triethylacetate, tris (n-propylacetate) aluminum, tris (isopropylacetate) aluminum, tris (n-butylacetate) aluminum, aluminum trisalicylaldehyde, tris (2 -Chelating compounds such as ethoxycarbonylphenol) aluminum and tris (acetamidineacetone) aluminum. Examples of the organic titanium compound include tetraalkoxy titanium such as tetraethoxy titanium, tetra isopropoxy titanium, and tetrabutoxy titanium; tetraethylene glycol titanate; and di-n-butylbis (triethanolamine). Titanate, Titanium Diisopropoxy Bis (Ethylacetone) Acid, Titanium Isopropoxy Caprylate, Titanium Isopropyl Trimethacrylate, Titanium Isopropyl Triacrylate, Isopropyl Triisostearyl Titanate, Isopropyltridecylbenzenesulfonyl titanate, Isopropyltri (butyl, methylpyrophosphinooxy) titanate, Tetraisopropylbis (dilauryl phosphite) (Ethoxy) titanate, dimethyl propylene ethoxy acetate titanate, dipropylene ethoxy acetate titanate, bis (dioctylphosphoryloxy) ethylene titanate, Tris (dioctyl phosphoric acid) titanium isopropoxide, isopropyl tris (dioctyl pyrophosphonium oxy) titanate, tetraisopropyl bis (dioctyl phosphorous phosphonium oxy) titanate, Tetraoctyl bis (di-tridecylphosphinofluorenyloxy) titanate, tetra (2,2-diallyloxymethyl-1-butyl) bis (di-tridecylphosphite) (Methoxy) titanate, bis (dioctylpyrophosphinooxy) glycolate titanate, tris (dioctylpyrophosphinooxy) Acid ethylene ester, isopropyltri-n-dodecylbenzenesulfonyl titanate, isopropyltrioctylfluorenyl titanate, isopropyldimethylpropenylisostearyltitanate, isopropyl Propyl isostearyl diacryl fluorenyl titanate, isopropyl tris (dioctylphosphonium oxy) titanate, isopropyl tricumyl phenyl titanate, isopropyl tris (N-aminoethyl-aminoethyl) titanate. Examples of the organic zirconium compound include zirconium n-propoxide, zirconium n-butoxide, zirconium tert-butoxide, zirconium isopropoxide, zirconium ethoxylate, zirconyl acetate, zirconium acetoacetone, and butoxy Zirconium acetoacetone, zirconium acetoacetone, zirconium acetoacetate, zirconium acetoacetate, zirconium acetoacetate, zirconium hexafluoroacetonate, zirconium hexafluoroacetonate, zirconium trifluoroacetonate, zirconium trifluoroacetonate. Examples of the organomagnesium compound include ethyl acetoacetate magnesium monoisopropyl, bis (ethyl acetoacetate) magnesium, ethyl acetoacetate magnesium monoisopropyl, and bis (ethyl acetone) magnesium. Examples of the organic zinc compound include zinc bis (ethyl acetate), zinc acetamidine, zinc bis-2-ethylhexanoate, zinc (meth) acrylate, zinc neodecanoate, zinc acetate, zinc octoate, Zinc salicylate. Examples of the organic copper compound include: Ethyl acetate) copper, bis (acetamidineacetone) copper. Examples of the organic nickel compound include bis (ethylacetate) nickel and bis (ethylacetone) nickel. Examples of the organic chromium compound include chromium tris (acetamidineacetate) chromium and tris (acetamidineacetone) chromium. Examples of the organic cobalt compound include cobalt tris (acetamidineacetate) cobalt and tris (acetamidineacetone) cobalt. Examples of the organic iron compound include tris (acetamidineacetate) iron and tris (acetamidineacetone) iron. Examples of the organic indium compound include tris (acetamidoacetate) indium and tris (acetamidoacetone) indium. Examples of the organic lanthanum compound include lanthanum tris (acetamidineacetate) and lanthanum tris (acetamidineacetone). Examples of the organotin compound include tetrakis (acetamidineacetate) tin and tetrakis (acetamidineacetone) tin. Examples of the organic fluorene compound include fluorene n-butoxide, fluorene tertiary butyl oxide, fluorene ethoxide, fluorene isopropoxide, isopropyl alcohol fluorene monoisopropyl ester, acetone acetone fluorene, tetrakis (dimethylformate Amino)). The component (D) is particularly preferably at least one metal-based condensation reaction catalyst selected from the group consisting of an organic aluminum compound, an organic titanium compound, an organic zirconium compound, an organic zinc compound, and an organic iron compound.

(D)成分之含量係相對於本組合物,以質量單位計成為20ppm~0.1%之範圍內之量,較佳為成為30ppm~0.05%之範圍內或50ppm~0.03%之範圍內之量。其原因在於:若(D)成分之含量為上述範圍之下限以上,則可充分地抑制由吸濕回焊引起之剝離,另一方面,若為上述範圍之上限以下,則可提昇所獲得之組合物之保存穩定性。 The content of the component (D) is an amount within a range of 20 ppm to 0.1%, preferably an amount within a range of 30 ppm to 0.05% or within a range of 50 ppm to 0.03%, relative to the composition. The reason is that if the content of the component (D) is above the lower limit of the above range, peeling caused by moisture absorption reflow can be sufficiently suppressed; on the other hand, if it is below the upper limit of the above range, the obtained Storage stability of the composition.

(E)成分係用以促進本組合物之硬化之矽氫化反應用觸媒。作為(E)成分,可例示鉑族元素觸媒、鉑族元素化合物觸媒,具體而言,可例示鉑系觸媒、銠系觸媒、鈀系觸媒及該等至少2種之組合,尤其就可顯著促進本組合物之硬化而言,較佳為鉑系觸媒。作為該鉑系觸媒,可例示:鉑細粉末、鉑黑、氯鉑酸、氯鉑酸之醇改性物、氯鉑酸與二烯烴之錯合物、鉑-烯烴錯合物、雙(乙醯乙酸)鉑、雙(乙醯丙酮)鉑等鉑-羰基錯合物;氯鉑酸-二乙烯基四甲基二矽氧烷錯合物、氯鉑酸-四乙烯基四甲基環四矽氧烷錯合物等氯鉑酸-烯基矽氧烷錯合物; 鉑-二乙烯基四甲基二矽氧烷錯合物、鉑-四乙烯基四甲基環四矽氧烷錯合物等鉑-烯基矽氧烷錯合物;氯鉑酸與乙炔醇類之錯合物;及該等2種以上之混合物,尤其就可促進本組合物之硬化而言,較佳為鉑-烯基矽氧烷錯合物。 The (E) component is a catalyst for a hydrosilylation reaction for promoting hardening of the composition. Examples of the (E) component include platinum group element catalysts and platinum group element compound catalysts. Specifically, platinum group catalysts, rhodium catalysts, palladium catalysts, and combinations of at least two of these are exemplified. In particular, a platinum-based catalyst is preferred because it can significantly promote hardening of the composition. Examples of the platinum-based catalyst include platinum fine powder, platinum black, chloroplatinic acid, an alcohol-modified product of chloroplatinic acid, a complex of chloroplatinic acid and a diene, a platinum-olefin complex, and a bis ( Acetylacetate) platinum, bis (acetamidineacetone) platinum and other platinum-carbonyl complexes; chloroplatinic acid-divinyltetramethyldisilaxane complexes, chloroplatinic acid-tetravinyltetramethyl ring Chloroplatinic acid-alkenyl siloxane complexes such as tetrasiloxane; Platinum-alkenylsiloxane complexes, such as platinum-divinyltetramethyldisilaxane complex, platinum-tetravinyltetramethylcyclotetrasiloxane, etc .; chloroplatinic acid and acetylene alcohol A complex of these types; and a mixture of these two or more kinds, especially in terms of promoting the hardening of the composition, is preferably a platinum-alkenyl siloxane complex.

作為用於鉑-烯基矽氧烷錯合物之烯基矽氧烷,可例示:1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、藉由乙基、苯基等取代該等烯基矽氧烷之甲基之一部分之烯基矽氧烷低聚物、及藉由烯丙基、己烯基等取代該等烯基矽氧烷之乙烯基之烯基矽氧烷低聚物,尤其就所生成之鉑-烯基矽氧烷錯合物之穩定性較為良好而言,較佳為1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷。 Examples of the alkenylsiloxane used in the platinum-alkenylsiloxane complex include 1,3-divinyl-1,1,3,3-tetramethyldisilazane, 1,3 , 5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, an alkenyl group in which a part of the methyl group of the alkenylsiloxane is substituted by ethyl, phenyl, etc. Siloxane oligomers, and vinyl alkenyl siloxane oligomers in which vinyl is substituted by allyl, hexenyl, etc., especially for the platinum-alkenyl siloxane produced As for the stability of the alkane complex, 1,3-divinyl-1,1,3,3-tetramethyldisilazane is preferred.

又,為提昇鉑-烯基矽氧烷錯合物之穩定性,較佳為將該等鉑-烯基矽氧烷錯合物溶解於1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷、1,3-二烯丙基-1,1,3,3-四甲基二矽氧烷、1,3-二乙烯基-1,3-二甲基-1,3-二苯基二矽氧烷、1,3-二乙烯基-1,1,3,3-四苯基二矽氧烷及1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷等烯基矽氧烷低聚物或二甲基矽氧烷低聚物等有機矽氧烷低聚物,尤佳為溶解於烯基矽氧烷低聚物。 In order to improve the stability of the platinum-alkenylsiloxane complex, it is preferable to dissolve these platinum-alkenylsiloxane complexes in 1,3-divinyl-1,1,3, 3-tetramethyldisilaxane, 1,3-diallyl-1,1,3,3-tetramethyldisilaxane, 1,3-divinyl-1,3-dimethyl -1,3-diphenyldisilaxane, 1,3-divinyl-1,1,3,3-tetraphenyldisilaxane and 1,3,5,7-tetramethyl-1 , 3,5,7-tetravinylcyclotetrasiloxane and other alkenyl siloxane oligomers or organic siloxane oligomers such as dimethyl siloxane oligomers, preferably soluble in alkenyl groups Siloxane oligomer.

(E)成分之含量係促進本組合物之硬化之量,具體而言,較佳為相對於本組合物,(E)成分中之觸媒金屬原子以質量單位計成為0.01~500ppm之範圍內之量、成為0.01~100ppm之範圍內之量、或成為0.1~50ppm之範圍內之量。其原因在於:若(E)成分之含量為上述範圍之下限以上,則所獲得之組合物之硬化性較為良好,另一方面,若為上述範圍之上限以下,則所獲得之硬化物之著色得以抑制。 The content of the component (E) is an amount that promotes the hardening of the composition. Specifically, it is preferred that the catalytic metal atom in the component (E) is within a range of 0.01 to 500 ppm in terms of mass units relative to the composition. The amount is in the range of 0.01 to 100 ppm, or the amount is in the range of 0.1 to 50 ppm. The reason is: if the content of the component (E) is above the lower limit of the above range, the hardenability of the obtained composition is good; on the other hand, if it is below the upper limit of the above range, the color of the hardened product obtained is colored Be suppressed.

為延長常溫下之使用壽命,提昇保存穩定性,本組合物中亦可含有(F)矽氫化反應抑制劑。作為(F)成分,可例示:1-乙炔基環己烷-1-醇、2-甲基-3-丁炔-2-醇、3,5-二甲基-1-己炔-3-醇及2-苯基-3-丁炔- 2-醇等炔烴醇;3-甲基-3-戊烯-1-炔及3,5-二甲基-3-己烯-1-炔等烯炔化合物;1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷及1,3,5,7-四甲基-1,3,5,7-四己烯基環四矽氧烷等甲基烯基矽氧烷低聚物;二甲基雙(3-甲基-1-丁炔-3-氧基)矽烷及甲基乙烯基雙(3-甲基-1-丁炔-3-氧基)矽烷等炔烴氧基矽烷;及異氰尿酸三烯丙酯系化合物。 In order to prolong the service life at normal temperature and improve the storage stability, (F) a hydrosilylation reaction inhibitor may be contained in the composition. Examples of the component (F) include 1-ethynylcyclohexane-1-ol, 2-methyl-3-butyn-2-ol, and 3,5-dimethyl-1-hexyne-3- Alcohol and 2-phenyl-3-butyne- Alkyne alcohols such as 2-alcohols; alkenyl compounds such as 3-methyl-3-pentene-1-yne and 3,5-dimethyl-3-hexene-1-yne; 1,3,5,7 -Tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane and 1,3,5,7-tetramethyl-1,3,5,7-tetrahexenylcyclotetrasiloxane Methyl alkenyl siloxane oligomers such as alkane; dimethylbis (3-methyl-1-butyne-3-oxy) silane and methylvinylbis (3-methyl-1-butyne -3-oxy) silanes such as alkynyloxysilane; and triallyl isocyanurate compounds.

(F)成分之含量並無限定,較佳為相對於本組合物100質量份,為0.0001~5質量份之範圍內或0.01~3質量份之範圍內。 The content of the (F) component is not limited, but it is preferably within a range of 0.0001 to 5 parts by mass or within a range of 0.01 to 3 parts by mass with respect to 100 parts by mass of the composition.

又,為進而提昇對硬化中接觸之基材之接著性,本組合物中亦可含有接著促進劑。作為該接著促進劑,較佳為一分子中具有1個以上之與矽原子鍵結之烷氧基之有機矽化合物。作為該烷氧基,可例示:甲氧基、乙氧基、丙氧基、丁氧基及甲氧基乙氧基,尤佳為甲氧基或乙氧基。又,作為該有機矽化合物之與矽原子鍵結之烷氧基以外之基,可例示:烷基、烯基、芳基、芳烷基及鹵化烷基等與上述相同之經鹵素取代或未經取代之一價烴基;3-縮水甘油氧基丙基及4-縮水甘油氧基丁基等縮水甘油氧基烷基;2-(3,4-環氧環己基)乙基及3-(3,4-環氧環己基)丙基等環氧環己基烷基;4-環氧乙烷基丁基及8-環氧乙烷基辛基等環氧乙烷基烷基;3-甲基丙烯醯氧基丙基等含有丙烯醯基之一價有機基;異氰酸酯基;異氰尿酸酯基;以及氫原子。該有機矽化合物較佳為具有可與本組合物中之脂肪族不飽和烴基或與矽原子鍵結之氫原子反應之基,具體而言,較佳為具有與矽原子鍵結之脂肪族不飽和烴基或與矽原子鍵結之氫原子。 Moreover, in order to improve the adhesiveness to the base material contacted during hardening, this composition may also contain an adhesion promoter. The adhesion promoter is preferably an organic silicon compound having one or more alkoxy groups bonded to a silicon atom in one molecule. Examples of the alkoxy group include a methoxy group, an ethoxy group, a propoxy group, a butoxy group, and a methoxyethoxy group, and a methoxy group or an ethoxy group is particularly preferable. Examples of the organic silicon compound other than an alkoxy group bonded to a silicon atom include an alkyl group, an alkenyl group, an aryl group, an aralkyl group, and a halogenated alkyl group. Substituted monovalent hydrocarbon groups; glycidyloxyalkyl groups such as 3-glycidoxypropyl and 4-glycidyloxybutyl; 2- (3,4-epoxycyclohexyl) ethyl and 3- ( Cyclohexylalkyl such as 3,4-epoxycyclohexyl) propyl; Ethoxyalkylene such as 4-oxiranylbutyl and 8-oxiranyloctyl; 3-methyl Acrylic fluorenyloxypropyl and other monovalent organic groups containing propylene fluorenyl groups; isocyanate groups; isocyanurate groups; and hydrogen atoms. The organosilicon compound preferably has a group capable of reacting with an aliphatic unsaturated hydrocarbon group or a hydrogen atom bonded to a silicon atom in the composition, and more specifically, a compound having an aliphatic bond bonded to a silicon atom. A saturated hydrocarbon group or a hydrogen atom bonded to a silicon atom.

接著促進劑之含量並無限定,較佳為相對於本組合物100質量份,為0.01~10質量份之範圍內或0.1~3質量份之範圍內。 The content of the accelerator is not limited, but it is preferably within a range of 0.01 to 10 parts by mass or within a range of 0.1 to 3 parts by mass relative to 100 parts by mass of the composition.

又,於本組合物中,作為其他任意之成分,亦可含有螢光體。作為該螢光體,可例示廣泛地用於發光二極體(LED)的包含氧化物系螢光體、氮氧化物系螢光體、氮化物系螢光體、硫化物系螢光體、氧 硫化物系螢光體等之黃色、紅色、綠色、藍色發光螢光體及該等至少2種之混合物。作為氧化物系螢光體,可例示:包含鈰離子之釔、鋁、石榴石系之YAG(yttrium aluminum garnet,釔鋁石榴石)系綠色~黃色發光螢光體;包含鈰離子之鋱、鋁、石榴石系之TAG(terbium aluminum garnet,鋱鋁石榴石)系黃色發光螢光體;及包含鈰或銪離子之矽酸鹽系綠色~黃色發光螢光體。作為氮氧化物系螢光體,可例示包含銪離子之矽、鋁、氧、氮系之賽隆(sialon)系紅色~綠色發光螢光體。作為氮化物系螢光體,可例示包含銪離子之鈣、鍶、鋁、矽、氮系之cousin系紅色發光螢光體。作為硫化物系螢光體,可例示包含銅離子或鋁離子之ZnS系綠色發光螢光體。作為氧硫化物系螢光體,可例示包含銪離子之Y2O2S系紅色發光螢光體。 Moreover, this composition may contain a fluorescent substance as another arbitrary component. Examples of the phosphor include oxide-based phosphors, oxynitride-based phosphors, nitride-based phosphors, sulfide-based phosphors, and the like, which are widely used in light-emitting diodes (LEDs). Oxysulfide-based phosphors include yellow, red, green, and blue light-emitting phosphors and a mixture of at least two of these. Examples of the oxide-based phosphor include yttrium, aluminum, and garnet-based YAG (yttrium aluminum garnet) -based green to yellow light-emitting phosphors containing cerium ions; rhenium and aluminum containing cerium ions TAG (terbium aluminum garnet) garnet-based yellow light-emitting phosphors; and silicate green-yellow light-emitting phosphors containing cerium or europium ions. Examples of the nitrogen oxide-based phosphor include silicon, aluminum, oxygen, and nitrogen-based sialon-based red to green light-emitting phosphors containing erbium ions. Examples of the nitride-based phosphors include calcium, strontium, aluminum, silicon, and nitrogen-based cousin-based red light-emitting phosphors containing thallium ions. Examples of the sulfide-based phosphor include a ZnS-based green light-emitting phosphor containing copper ions or aluminum ions. Examples of the oxysulfide-based phosphor include a Y 2 O 2 S-based red light-emitting phosphor containing europium ions.

該螢光體之含量並無特別限定,於本組合物中,較佳為0.1~70質量%之範圍內或1~20質量%之範圍內。 The content of the phosphor is not particularly limited, and in the present composition, it is preferably within a range of 0.1 to 70% by mass or within a range of 1 to 20% by mass.

又,於無損本發明之目的之範圍內,於本組合物中,作為其他任意之成分,亦可含有選自二氧化矽、玻璃及氧化鋁等中之1種以上之無機填充劑;聚矽氧橡膠粉末;聚矽氧樹脂及聚甲基丙烯酸酯樹脂等樹脂粉末;選自耐熱劑、染料、顏料、阻燃性賦予劑、界面活性劑、溶劑等中之1種以上之成分。 In addition, as long as the object of the present invention is not impaired, the composition may contain, as other optional components, one or more inorganic fillers selected from silicon dioxide, glass, alumina, and the like; polysilicon Oxygen rubber powder; resin powder such as silicone resin and polymethacrylate resin; one or more components selected from the group consisting of heat-resistant agents, dyes, pigments, flame retardants, surfactants, solvents, and the like.

本組合物係藉由室溫放置或加熱而進行硬化,較佳為進行加熱以使之快速地硬化。加熱溫度較佳為50~200℃之範圍內。 The composition is hardened by being left at room temperature or heated, and is preferably heated to harden rapidly. The heating temperature is preferably within a range of 50 to 200 ° C.

本組合物較佳為硬化而形成JIS K 6253所規定之A型硬度計硬度為15~99或30~95之硬化物。其原因在於:若硬化性聚矽氧組合物之硬化物之硬度為上述範圍之下限以上,則具有強度,且使用其作為光半導體元件之密封材料或被覆材料之情形時之保護性優異,另一方面,若為上述範圍之上限以下,則硬化物變得柔軟,耐久性優異。 The composition is preferably hardened to form a hardened product having a hardness of 15 to 99 or 30 to 95 in a type A durometer specified in JIS K 6253. The reason is that if the hardness of the hardened material of the curable polysiloxane composition is above the lower limit of the above range, it has strength and has excellent protection when used as a sealing material or a covering material for an optical semiconductor device. On the other hand, when it is below the upper limit of the said range, hardened | cured material becomes soft and it is excellent in durability.

其次,詳細地說明本發明之光半導體裝置。 Next, the optical semiconductor device of the present invention will be described in detail.

本發明之光半導體裝置之特徵在於:光半導體元件藉由上述組合物之硬化物密封、被覆或接著。作為該光半導體元件,可例示:發光二極體(LED)、半導體雷射、光電二極體、光電晶體、固體攝像、光電耦合器用發光體及受光體,尤佳為發光二極體(LED)。 The optical semiconductor device of the present invention is characterized in that the optical semiconductor element is sealed, covered, or adhered by the hardened material of the composition. Examples of the optical semiconductor device include a light emitting diode (LED), a semiconductor laser, a photodiode, a photocrystal, a solid-state imaging device, a light emitting body and a light receiving body for a photocoupler, and a light emitting diode (LED) is particularly preferable. ).

由於發光二極體(LED)會自光半導體元件之上下左右引起發光,故而關於構成發光二極體(LED)之零件,吸收光者不佳,較佳為透光率較高或反射率較高之材料。因此,搭載光半導體元件之基板亦較佳為透光率較高或反射率較高之材料。作為此種搭載光半導體元件之基板,例如可例示:銀、金及銅等導電性金屬;鋁及鎳等非導電性金屬;PPA(Polyphthalamide,聚鄰苯二甲醯胺)及LCP(Liquid Crystal Polymer,液晶聚合物)等混合有白色顏料之熱塑性樹脂;環氧樹脂、BT(Bismaleimide Triazine,雙馬來醯亞胺三)樹脂、聚醯亞胺樹脂及聚矽氧樹脂等含有白色顏料之熱硬化性樹脂;氧化鋁及氮氧化鋁等陶瓷。由於硬化性聚矽氧組合物之硬化物對於光半導體元件及基板之耐熱衝擊性較為良好,故而所獲得之光半導體裝置可顯示良好之可靠性。 Since light-emitting diodes (LEDs) cause light emission from above, below, and from the left and right sides of light-emitting semiconductor elements, the parts that make up light-emitting diodes (LEDs) do not absorb light well, preferably with higher light transmission or reflectance High material. Therefore, the substrate on which the optical semiconductor element is mounted is also preferably a material having a high light transmittance or a high reflectance. Examples of such substrates on which optical semiconductor devices are mounted include conductive metals such as silver, gold, and copper; non-conductive metals such as aluminum and nickel; PPA (Polyphthalamide) and LCP (Liquid Crystal) Polymer (liquid crystal polymer) and other thermoplastic resins mixed with white pigment; epoxy resin, BT (Bismaleimide Triazine, bismaleimide ) Resin, polyimide resin, and silicone resin containing thermosetting resins such as white pigment; ceramics such as alumina and alumina oxynitride. Since the cured product of the curable polysiloxane composition has good thermal shock resistance to the optical semiconductor element and the substrate, the obtained optical semiconductor device can exhibit good reliability.

將作為本發明之光半導體裝置之一例之表面安裝型LED之剖面圖示於圖1。關於圖1所表示之LED,將光半導體元件1黏晶於引線框架2上,並藉由接合線4將該光半導體元件1與引線框架3打線接合。於該光半導體元件1之周圍形成有光反射材料5,該光反射材料5之內側之光半導體元件1係藉由上述之硬化性聚矽氧組合物的硬化物6而密封。 A cross-sectional view of a surface-mount LED as an example of the optical semiconductor device of the present invention is shown in FIG. 1. Regarding the LED shown in FIG. 1, an optical semiconductor element 1 is bonded to a lead frame 2, and the optical semiconductor element 1 and the lead frame 3 are wire-bonded by a bonding wire 4. A light reflecting material 5 is formed around the light semiconductor element 1. The light semiconductor element 1 on the inner side of the light reflecting material 5 is sealed by the hardened product 6 of the hardening polysiloxane composition described above.

作為製造圖1所示之表面安裝型LED之方法,可例示如下方法:將光半導體元件1黏晶於光反射材料5之內側之引線框架2上,藉由金製之接合線4將該光半導體元件1與引線框架3打線接合,繼而,藉由上述之硬化性聚矽氧組合物對光半導體元件1進行樹脂密封。 As a method of manufacturing the surface-mounted LED shown in FIG. 1, the following method can be exemplified: an optical semiconductor element 1 is bonded to a lead frame 2 inside the light reflecting material 5, and the light is bonded by a gold bonding wire 4 The semiconductor element 1 and the lead frame 3 are wire-bonded, and then the optical semiconductor element 1 is resin-sealed with the above-mentioned curable polysiloxane composition.

[實施例] [Example]

藉由實施例及比較例詳細地說明本發明之硬化性聚矽氧組合物及光半導體裝置。再者,如下所述般測定硬化性聚矽氧組合物之硬化物之硬度、硬化性聚矽氧組合物之硬化物之初期剝離率及硬化物之吸濕回焊後之剝離率。 The hardening polysiloxane composition and the optical semiconductor device of the present invention will be described in detail by way of examples and comparative examples. The hardness of the cured product of the curable silicone composition, the initial peeling rate of the cured product of the curable silicone composition, and the peeling rate of the cured product after moisture absorption and reflow were measured as described below.

[硬度] [hardness]

藉由於150℃、1小時、5MPa之壓力之條件下將硬化性聚矽氧組合物加壓成形而製作片狀之硬化物。藉由JIS K 6253所規定之A型硬度計測定該片狀之硬化物之硬度。 The hardened polysiloxane composition was press-formed under the conditions of 150 ° C., 1 hour, and a pressure of 5 MPa to produce a sheet-like hardened product. The hardness of the sheet-like hardened material was measured with an A-type hardness tester specified in JIS K 6253.

又,使用硬化性聚矽氧組合物,於150℃下加熱1小時,藉此製作圖1所示之光半導體裝置。如下所述般測定硬化性聚矽氧組合物對於該光半導體裝置之耐剝離性。 In addition, an optical semiconductor device shown in FIG. 1 was produced by using a curable polysiloxane composition and heating at 150 ° C. for 1 hour. The peel resistance of the curable polysiloxane composition to the optical semiconductor device was measured as described below.

[初期剝離率] [Initial peeling rate]

針對光半導體裝置20個,利用光學顯微鏡觀察引線框架及接合線與硬化物之間之剝離狀態,將剝離之比率(剝離之個數/20個)設為剝離率。 With respect to 20 optical semiconductor devices, the peeling state between the lead frame and the bonding wire and the cured product was observed with an optical microscope, and the peeling ratio (the number of peelings / 20) was set as the peeling rate.

[吸濕回焊後之剝離率] [Peeling rate after moisture absorption reflow]

將上述之光半導體裝置20個於85℃/85%RH烘箱中保管168小時,於280℃之烘箱內放置30秒後,恢復至室溫(25℃)下,利用光學顯微鏡觀察引線框架及接合線與硬化物之間之剝離狀態,將剝離之比率(剝離之個數/20個)設為剝離率。 Store 20 of the above-mentioned optical semiconductor devices in an oven at 85 ° C / 85% RH for 168 hours, and then place them in an oven at 280 ° C for 30 seconds, and then return to room temperature (25 ° C). Observe the lead frame and bonding with an optical microscope The peeling state between the thread and the cured product was set as a peeling ratio (the number of peeled pieces / 20 pieces).

[實施例1~6、比較例1~8] [Examples 1 to 6, Comparative Examples 1 to 8]

以表1及表2所示之組成(質量份)均勻地混合如下之成分而製備實施例1~6及比較例1~8之硬化性聚矽氧組合物。再者,式中,Vi表示乙烯基,Me表示甲基。又,於表1及表2中,SiH/Vi表示於硬化性聚矽氧組合物中,(B)成分中之與矽原子鍵結之氫原子相對於(A)成分中之乙烯基之合計1莫耳的合計莫耳數。 The following components were uniformly mixed with the compositions (parts by mass) shown in Tables 1 and 2 to prepare the curable polysiloxane compositions of Examples 1 to 6 and Comparative Examples 1 to 8. In the formula, Vi represents a vinyl group and Me represents a methyl group. In Tables 1 and 2, SiH / Vi represents the total of the hydrogen atoms bonded to the silicon atom in the component (B) and the vinyl group in the component (A) in the curable polysiloxane composition. The total number of moles for 1 mole.

作為(A)成分,使用如下之成分。再者,黏度係25℃下之值,使用依據JIS K7117-1之B型黏度計而測定。 As (A) component, the following components were used. The viscosity is a value at 25 ° C, and was measured using a B-type viscometer according to JIS K7117-1.

(a-1-1)成分:黏度300mPa‧s,平均式:Me2ViSiO(Me2SiO)150SiMe2Vi (a-1-1) Composition: viscosity 300 mPa‧s, average formula: Me 2 ViSiO (Me 2 SiO) 150 SiMe 2 Vi

所表示之分子鏈兩末端經二甲基乙烯基矽烷氧基封阻之二甲基聚矽氧烷(乙烯基之含量=0.48質量%) Dimethylpolysilane blocked at both ends of the indicated molecular chain with dimethylvinylsiloxy (content of vinyl group = 0.48% by mass)

(a-1-2)成分:黏度10,000mPa‧s,平均式:Me2ViSiO(Me2SiO)500SiMe2Vi (a-1-2) Composition: viscosity 10,000 mPa‧s, average formula: Me 2 ViSiO (Me 2 SiO) 500 SiMe 2 Vi

所表示之分子鏈兩末端經二甲基乙烯基矽烷氧基封阻之二甲基聚矽氧烷(乙烯基之含量=0.15質量%) Dimethylpolysilane blocked at both ends of the indicated molecular chain by dimethylvinylsiloxy (content of vinyl group = 0.15% by mass)

(a-2-1)成分:於25℃下為白色固體狀,可溶於甲苯,平均單元式:(Me2ViSiO1/2)0.15(Me3SiO1/2)0.38(SiO4/2)0.47(HO1/2)0.01 (a-2-1) Component: white solid at 25 ° C, soluble in toluene, average unit formula: (Me 2 ViSiO 1/2 ) 0.15 (Me 3 SiO 1/2 ) 0.38 (SiO 4/2 ) 0.47 (HO 1/2 ) 0.01

所表示之一分子中具有2個以上之乙烯基之有機聚矽氧烷(乙烯基的含量=4.2質量%) Organopolysiloxane containing more than two vinyl groups in one molecule (content of vinyl group = 4.2% by mass)

(a-2-2)成分:於25℃下為白色固體狀,可溶於甲苯,平均單元式:(Me2ViSiO1/2)0.13(Me3SiO1/2)0.45(SiO4/2)0.42(HO1/2)0.01 (a-2-2) Component: white solid at 25 ° C, soluble in toluene, average unit formula: (Me 2 ViSiO 1/2 ) 0.13 (Me 3 SiO 1/2 ) 0.45 (SiO 4/2 ) 0.42 (HO 1/2 ) 0.01

所表示之一分子中具有2個以上之乙烯基之有機聚矽氧烷(乙烯基的含量=3.4質量%) Organopolysiloxane having more than two vinyl groups in one molecule (content of vinyl group = 3.4% by mass)

作為(B)成分,使用如下之成分。再者,黏度係25℃下之值,使用依據JIS K7117-1之B型黏度計而測定。 As (B) component, the following components were used. The viscosity is a value at 25 ° C, and was measured using a B-type viscometer according to JIS K7117-1.

(b-1)成分:平均式:Me3SiO(MeHSiO)55SiMe3 (b-1) Component: Average formula: Me 3 SiO (MeHSiO) 55 SiMe 3

所表示之黏度為20mPa‧s之分子鏈兩末端經三甲基矽烷氧基封阻之甲基氫聚矽氧烷(與矽原子鍵結之氫原子之含量=1.6質量%) Methylhydropolysiloxane blocked by trimethylsiloxy groups at both ends of the molecular chain with a viscosity of 20mPa‧s (content of hydrogen atoms bonded to silicon atoms = 1.6% by mass)

(b-2)成分:平均式:Me3SiO(MeHSiO)15SiMe3 (b-2) Component: Average formula: Me 3 SiO (MeHSiO) 15 SiMe 3

所表示之黏度為5mPa‧s之分子鏈兩末端經三甲基矽烷氧基封阻之二甲基矽氧烷-甲基氫矽氧烷共聚物(與矽原子鍵結之氫原子之含量=1.42質量%) Dimethylsiloxane-methylhydrosilane copolymer blocked by trimethylsiloxy at both ends of the molecular chain with a viscosity of 5mPa‧s (content of hydrogen atom bonded to silicon atom = 1.42% by mass)

作為(C)成分,使用如下之成分。 As (C) component, the following components were used.

(c-1)成分:苯并三唑 (c-1) Ingredient: benzotriazole

(c-2)成分:甲苯并三唑 (c-2) Component: Toluotriazole

(c-3)成分:羧基苯并三唑 (c-3) Ingredient: carboxybenzotriazole

作為(D)成分,使用如下之成分。 As (D) component, the following components were used.

(d-1)成分:乙醯乙酸乙酯鋯 (d-1) Ingredient: ethyl acetate zirconium acetate

(d-2)成分:異丙基三異硬脂醯基鈦酸酯 (d-2) Ingredient: Isopropyltriisostearylfluorenyl titanate

(d-3)成分:乙醯烷氧基二異丙氧基鋁 (d-3) Ingredient: Aluminum aluminum alkoxydiisopropoxide

作為(E)成分,使用鉑之1,3-二乙烯基四甲基二矽氧烷錯合物之1,3-二乙烯基四甲基二矽氧烷溶液(鉑金屬之含量=約6000ppm)。 As component (E), a 1,3-divinyltetramethyldisilaxane complex solution of 1,3-divinyltetramethyldisilanium in platinum (content of platinum metal = about 6000 ppm ).

作為(F)成分,使用1-乙炔基環己烷-1-醇。 As (F) component, 1-ethynylcyclohexane-1-ol was used.

由表1及表2之結果可知,實施例1~6之硬化性聚矽氧組合物之硬化物對於光半導體裝置中之引線框架或接合線具有較高之耐剝離性。 From the results of Tables 1 and 2, it can be seen that the cured products of the curable polysiloxane compositions of Examples 1 to 6 have high peel resistance to lead frames or bonding wires in optical semiconductor devices.

[產業上之可利用性] [Industrial availability]

本發明之硬化性聚矽氧組合物可用作發光二極體(LED)、半導體雷射、光電二極體、光電晶體、固體攝像、光電耦合器用發光體及受光體等光半導體裝置之密封劑、保護劑或接著劑。又,本發明之光半導體裝置可用作光學裝置、光學設備、照明設備、照明裝置等之光半導體裝置。 The hardenable polysiloxane composition of the present invention can be used as a seal for optical semiconductor devices such as light emitting diodes (LEDs), semiconductor lasers, photodiodes, photovoltaic crystals, solid-state imaging, light emitting bodies for photocouplers, and light receiving bodies. Agent, protective agent or adhesive. The optical semiconductor device of the present invention can be used as an optical semiconductor device for an optical device, an optical device, a lighting device, or a lighting device.

Claims (8)

一種硬化性聚矽氧組合物,其至少包含:(A)有機聚矽氧烷,其係一分子中具有至少2個與矽原子鍵結之烯基;(B)有機氫化聚矽氧烷,其係一分子中具有至少2個與矽原子鍵結之氫原子{相對於(A)成分中之與矽原子鍵結之烯基1莫耳,本成分中之與矽原子鍵結之氫原子成為0.1~10莫耳之量};(C)三唑系化合物(相對於本組合物,以質量單位計成為1ppm~0.5%之量);(D)金屬系縮合反應觸媒(相對於本組合物,以質量單位計成為20ppm~0.1%之量);及(E)矽氫化反應用觸媒(促進本組合物之硬化之量)。A hardening polysiloxane composition comprising at least: (A) an organic polysiloxane, which has at least 2 alkenyl groups bonded to silicon atoms in one molecule; (B) an organic hydrogenated polysiloxane, It is a molecule with at least 2 hydrogen atoms bonded to silicon atoms {relative to 1 mol of the alkenyl group bonded to silicon atoms in (A) component, and the hydrogen atom bonded to silicon atoms in this component Amount of 0.1 to 10 moles}; (C) triazole-based compound (relative to the composition, an amount of 1 ppm to 0.5% by mass unit); (D) metal-based condensation reaction catalyst (relative to the present The composition is an amount of 20 ppm to 0.1% by mass unit); and (E) a catalyst for a hydrosilylation reaction (an amount that promotes hardening of the composition). 如請求項1之硬化性聚矽氧組合物,其中(A)成分係(A-1)通式:R1 3SiO(R1 2SiO)mSiR1 3(式中,R1為相同或不同之一價烴基,其中,一分子中至少2個R1為烯基,m為5~1,000之整數)所表示之直鏈狀之有機聚矽氧烷及/或(A-2)平均單元式:(R1SiO3/2)a(R1 2SiO2/2)b(R1 3SiO1/2)c(SiO4/2)d(XO1/2)e(式中,R1與上述相同,其中,R1之合計之0.01~50莫耳%為烯基,X為氫原子或烷基,a、b、c、d及e係滿足0≦a≦1.0、0≦b≦1.0、0≦c<0.9、0≦d<0.5、0≦e<0.4且a+b+c+d=1.0之數)所表示之支鏈狀之有機聚矽氧烷。The hardening polysiloxane composition according to claim 1, wherein (A) component is (A-1) and the general formula is: R 1 3 SiO (R 1 2 SiO) m SiR 1 3 (where R 1 is the same Different monovalent hydrocarbon groups, in which at least two R 1 in an molecule are alkenyl groups, and m is an integer of 5 to 1,000) linear organic polysiloxane and / or (A-2) average unit represented by Formula: (R 1 SiO 3/2 ) a (R 1 2 SiO 2/2 ) b (R 1 3 SiO 1/2 ) c (SiO 4/2 ) d (XO 1/2 ) e (where, R 1 is the same as above, wherein 0.01 to 50 mole% of the total of R 1 is an alkenyl group, X is a hydrogen atom or an alkyl group, and a, b, c, d, and e satisfy 0 ≦ a ≦ 1.0, 0 ≦ b Branched organic polysiloxane represented by ≦ 1.0, 0 ≦ c <0.9, 0 ≦ d <0.5, 0 ≦ e <0.4, and a + b + c + d = 1.0). 如請求項1之硬化性聚矽氧組合物,其中(C)成分係苯并三唑系化合物。The curable polysiloxane composition according to claim 1, wherein the component (C) is a benzotriazole-based compound. 如請求項3之硬化性聚矽氧組合物,其中(C)成分係選自由苯并三唑、甲苯并三唑、羧基苯并三唑、1H-苯并三唑-5-羧酸甲酯及硝基苯并三唑所組成之群中之至少1種苯并三唑系化合物。The hardening silicone composition according to claim 3, wherein the component (C) is selected from the group consisting of benzotriazole, tolutriazole, carboxybenzotriazole, and 1H-benzotriazole-5-carboxylic acid methyl ester. And at least one benzotriazole compound in the group composed of nitrobenzotriazole. 如請求項1之硬化性聚矽氧組合物,其中(D)成分係選自由有機鋁化合物、有機鈦化合物、有機鋯化合物、有機鋅化合物及有機鐵化合物所組成之群中之至少1種有機金屬化合物。The hardening polysiloxane composition according to claim 1, wherein the component (D) is at least one organic compound selected from the group consisting of an organoaluminum compound, an organotitanium compound, an organozirconium compound, an organozinc compound, and an organoiron compound. Metal compounds. 如請求項1之硬化性聚矽氧組合物,其係光半導體裝置之密封劑或被覆劑。The curable polysiloxane composition according to claim 1, which is a sealant or coating agent for an optical semiconductor device. 一種光半導體裝置,其中光半導體元件係藉由如請求項1至5中任一項之硬化性聚矽氧組合物之硬化物密封或被覆。An optical semiconductor device in which the optical semiconductor element is sealed or coated with a hardened material of a hardenable polysiloxane composition according to any one of claims 1 to 5. 如請求項7之光半導體裝置,其中光半導體元件係發光二極體。The optical semiconductor device according to claim 7, wherein the optical semiconductor element is a light emitting diode.
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104927059B (en) * 2015-07-01 2018-02-09 上海谊地化学有限公司 Polyalcohol modified phenyl vinyl polysiloxane and preparation method thereof
CN108475713B (en) 2016-01-15 2021-06-18 西铁城时计株式会社 Condensation reaction type die bonding agent, LED light-emitting device and manufacturing method thereof
JP6561901B2 (en) * 2016-04-15 2019-08-21 信越化学工業株式会社 Metal surface treatment agent
JP6915954B2 (en) 2016-09-29 2021-08-11 ダウ・東レ株式会社 Curable silicone compositions, cured products thereof, and opto-semiconductor devices
JP6702233B2 (en) * 2017-03-09 2020-05-27 信越化学工業株式会社 Addition-curable organopolysiloxane resin composition, cured product of the composition, and semiconductor device having the cured product
JP2019031601A (en) * 2017-08-07 2019-02-28 信越化学工業株式会社 Addition-curable silicone composition and silicone rubber cured product
JP7118413B2 (en) * 2018-08-07 2022-08-16 日東化成株式会社 Curable organopolysiloxane composition
KR20220123417A (en) * 2019-12-26 2022-09-06 다우 실리콘즈 코포레이션 Curable organopolysiloxane composition and cured product thereof, protective agent or adhesive, and electrical/electronic device
KR20220158020A (en) * 2020-04-23 2022-11-29 와커 헤미 아게 Optical bonding silicone with UV blocker for outdoor applications

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006056986A (en) * 2004-08-19 2006-03-02 Shin Etsu Chem Co Ltd Two-pack curing type silicone composition
CN101039984A (en) * 2004-11-02 2007-09-19 住友电木株式会社 Epoxy resin composition and semiconductor device
TW201219455A (en) * 2010-10-19 2012-05-16 Sekisui Chemical Co Ltd Encapsulating agent for optical semiconductor devices, and optical semiconductor device using same
TW201333118A (en) * 2012-02-02 2013-08-16 Dow Corning Toray Co Ltd Curable silicone composition, cured product thereof, and optical semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3270489B2 (en) * 1991-01-30 2002-04-02 東レ・ダウコーニング・シリコーン株式会社 Curable organopolysiloxane composition
JPH04359059A (en) * 1991-06-04 1992-12-11 Shin Etsu Chem Co Ltd Roll material for beaming and fixing roll
JPH09316335A (en) * 1996-05-24 1997-12-09 Toray Dow Corning Silicone Co Ltd Liquid silicone rubber composition and preparation thereof
JP2003113324A (en) * 2001-07-31 2003-04-18 Kanegafuchi Chem Ind Co Ltd Curable composition
JP2004149611A (en) * 2002-10-29 2004-05-27 Dow Corning Toray Silicone Co Ltd Method for protecting metallic electroconductive part of electric/electronic apparatus
JP4503271B2 (en) * 2003-11-28 2010-07-14 東レ・ダウコーニング株式会社 Method for producing silicone laminate
JP2007002234A (en) * 2005-05-27 2007-01-11 Shin Etsu Chem Co Ltd Curable silicone rubber composition and semiconductor device
JP2007284687A (en) * 2007-06-08 2007-11-01 Shin Etsu Chem Co Ltd Room temperature curable organopolysiloxane composition and part using the same as adhesive
JP4868174B2 (en) * 2008-02-08 2012-02-01 信越化学工業株式会社 Heat-curing silicone rubber composition
JP2009215434A (en) 2008-03-11 2009-09-24 Shin Etsu Chem Co Ltd Silicone resin composition and light-emitting semiconductor device
JP5136963B2 (en) 2008-03-24 2013-02-06 信越化学工業株式会社 Curable silicone rubber composition and semiconductor device
JP5555989B2 (en) * 2008-08-08 2014-07-23 横浜ゴム株式会社 Silicone resin composition, silicone resin using the same, and sealed optical semiconductor element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006056986A (en) * 2004-08-19 2006-03-02 Shin Etsu Chem Co Ltd Two-pack curing type silicone composition
CN101039984A (en) * 2004-11-02 2007-09-19 住友电木株式会社 Epoxy resin composition and semiconductor device
TW201219455A (en) * 2010-10-19 2012-05-16 Sekisui Chemical Co Ltd Encapsulating agent for optical semiconductor devices, and optical semiconductor device using same
TW201333118A (en) * 2012-02-02 2013-08-16 Dow Corning Toray Co Ltd Curable silicone composition, cured product thereof, and optical semiconductor device

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