TWI643364B - 發光二極體封裝基板及發光二極體封裝元件 - Google Patents

發光二極體封裝基板及發光二極體封裝元件 Download PDF

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TWI643364B
TWI643364B TW105119633A TW105119633A TWI643364B TW I643364 B TWI643364 B TW I643364B TW 105119633 A TW105119633 A TW 105119633A TW 105119633 A TW105119633 A TW 105119633A TW I643364 B TWI643364 B TW I643364B
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electrode
emitting diode
light emitting
diode package
substrate
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林厚德
曾文良
陳隆欣
陳濱全
林新強
張超雄
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榮創能源科技股份有限公司
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Abstract

一種發光二極體封裝基板，包括一上基板、一下基板以及一電路層。 該電路層位於該上基板及該下基板之間，該上基板包括一功能區，該功能區上設置有一第一電極以及一第二電極。該下基板上設有一第三電極、一第四電極以及一腔體，該第三電極及該第四電極設置在相對第一電極以及第二電極之相對面，藉由該電路層使該第一電極與該第二電極分別電性連接至該第三電極與該第四電極，部分該電路層從該腔體中暴露。

Description

發光二極體封裝基板及發光二極體封裝元件
本發明涉及一種半導體元件，尤其涉及一種發光二極體封裝基板及包含該發光二極體封裝基板的發光二極體封裝元件。
目前，發光二極體封裝元件大都使用覆晶技術進行封裝。惟，隨著發光二極體封裝元件的尺寸需求朝越來越小的趨勢發展，在發光二極體晶粒的尺寸不變之下，發光二極體封裝元件的功能區域(Function area)也變得越來越小，靜電防護裝置(如穩壓二極體(Zener diode))可設置在功能區域上的區域也將逐漸失去。如此，將導致發光二極體封裝元件可能有下列缺失：(1)失去靜電防護的功效；(2)發光二極體晶粒位置需要配合靜電防護裝置的固晶位置調整，導致封裝元件的發射光場變形。
有鑒於此，本發明提供一種能夠解決上述問題的發光二極體封裝基板及一種包含該發光二極體封裝基板的發光二極體封裝結構。
一種發光二極體封裝基板，包括一上基板、一下基板以及一電路層，該電路層位於該上基板及該下基板之間，所述電路層分別電連接該上基板及該下基板，該下基板上開設有一腔體，該腔體貫穿該下基板，部分該電路層從該腔體中暴露，外露於該下基板。
一種發光二極體封裝元件，其包括：一種發光二極體封裝基板，包括一上基板、一下基板以及一電路層，該電路層位於該上基板及該下基板之間，所述電路層分別電連接該上基板及該下基板，該下基板上開設有一腔體，該腔體貫穿該下基板，部分該電路層從該腔體中暴露，外露於該下基板；至少一穩壓二極體，設置在該腔體內並電性連接該電路層，該至少一穩壓二極體具有靜電防護功能；一發光二極體晶粒，設置在該上基板上，並電性連接該發光二極體封裝基板。
本發明提供的該發光二極體封裝元件，將該發光二極體封裝基板設置成上、下基板，其中該下基板設置至少一該腔體用於收容該靜電防護裝置，使該發光二極體封裝元件在保持該發光二極體晶粒在尺寸不變的情況下具備靜電防護的功效；該上基板表面不需要為該靜電防護裝置騰出位置而影響該發光二極體封裝元件的發射光場，保證該發光二極體晶粒位於該第一表面的中心位置；同時使該發光二極體晶粒的位置不需要配合該靜電防護裝置的固晶位置作出調整，避免了該發光二極體封裝元件的發射光 場的變形。
100、200‧‧‧發光二極體封裝元件
10‧‧‧發光二極體封裝基板
12‧‧‧上基板
120‧‧‧第一導電孔
122‧‧‧第一表面
124‧‧‧第二表面
126‧‧‧第一電極
128‧‧‧第二電極
14‧‧‧電路層
142‧‧‧第三表面
144‧‧‧第四表面
146‧‧‧第三電極
148‧‧‧第四電極
16‧‧‧下基板
160‧‧‧第二導電孔
162‧‧‧第五表面
164‧‧‧第六表面
166‧‧‧第五電極
168‧‧‧第六電極
169‧‧‧腔體
20‧‧‧靜電防護裝置
22‧‧‧導線
30‧‧‧發光二極體晶粒
40‧‧‧螢光層
42‧‧‧螢光微粒
50‧‧‧環繞層
60‧‧‧覆蓋層
圖1係本發明第一實施方式提供的發光二極體封裝元件的剖視圖。
圖2係在圖1的發光二極體封裝基板的剖視圖。
圖3係在圖2的發光二極體封裝基板的俯視圖。
圖4係在圖2的發光二極體封裝基板的仰視圖。
圖5係在圖2的發光二極體封裝的腔體中設置靜電防護裝置的剖視圖。
圖6係在圖1中的發光二極體封裝元件的俯視圖。
圖7係本發明第二實施方式提供的發光二極體封裝元件的剖視圖。
圖8係圖7的發光二極體封裝元件的仰視圖。
請參閱圖1，本發明第一實施例提供一種發光二極體封裝元件100。該發光二極體封裝元件100包括一個發光二極體封裝基板10、一個靜電防護裝置20、一個發光二極體晶粒30、一個螢光層40及一個環繞層50。
該發光二極體封裝基板10包括一個上基板12、一個電路層14以及一個下基板16。該電路層14位於該上基板12及該下基板16之間。
請一併參閱圖2，該上基板12包括一個第一表面122及一個第二表面124。該第一表面122及該第二表面124位於該上基板12的相背兩側。該第 一表面122上設置有一個第一電極126及一個第二電極128。該第一電極126及該第二電極128間隔設置在該第一表面122的中央。
請該電路層14包括一個第三表面142及一個第四表面144。該第三表面142及該第四表面144位於該電路層14的相背兩側。該第三表面142貼覆在該第二表面124上。該電路層14設置有一個第三電極146及一個第四電極148。
請一併參閱圖2及圖3，所述上基板12設置有複數第一導電孔120。部分該複數第一導電孔120電連接該第一電極126與該電路層14，部分該複數第一導電孔120電連接該第二電極128及該電路層14。
請一併參閱圖2及圖4，該下基板16包括一個第五表面162及一個第六表面164。該第五表面162及該第六表面164位於該下基板16的相背兩側。該第五表面162貼覆於該第四表面144，並與該第二表面124相接觸。該第六表面164上設置有一個第五電極166及一個第六電極168。該下基板16還包括一個腔體169。該腔體169貫穿該第五表面162及該第六表面164。部分該第三電極146及部分該第四電極148從該兩個腔體169中暴露，外露於該下基板16。
請一併參閱圖2及圖4，所述下基板16設置有複數第二導電孔160。該複數第二導電孔160導通該第五表面162及該第六表面164。部分該複數第二導電孔160電連接該第五電極166與該電路層14，部分該複數第二導電孔160該第六電極168及該電路層14。
請參閱圖1及圖5，該靜電防護裝置20設置在該腔體169內。本實施方式中，該靜電防護裝置20為穩壓二極體。該靜電防護裝置20安裝在該第四表面144，並與該第三電極146電連接。該靜電防護裝置20還藉由導線22與該第四電極148連接。
請一併參閱圖1及圖6，該發光二極體晶粒30大致呈長方體。該發光二極體晶粒30貼覆在該第一表面122的中央位置。該發光二極體晶粒30與該第一電極126及該第二電極128固定且電連接。該發光二極體晶粒30的底部表面積大於該第一表面122表面積的75%。該發光二極體晶粒的發光面表面積與該第一表面122的面積比值在0.75：1~1：1之間。
請參閱圖1，該螢光層40設置在該發光二極體晶粒30上。請參閱圖6，本實施方式中，該螢光層40的底部表面積大於該發光二極體晶粒30的發光面表面積。該螢光層40具有複數螢光微粒42，該複數螢光微粒42藉由該發光二極體晶粒30的光束激發產生與該發光二極體晶粒30光束互補的色光，使該發光二極體封裝元件100產生白光。
該環繞層50設置在該第一表面122上且環繞在該發光二極體晶粒30及該螢光層40的四周。該環繞層50用於固定該發光二極體晶粒30及該螢光層40。該環繞層50的內側面具有光學反射特性，使自該發光二極體晶粒30發射的光束集中從該螢光層40方向射出該發光二極體封裝元件100。
進一步地，該發光二極體封裝元件100可以包括一覆蓋層60。該覆蓋層60填充於該腔體169內並覆蓋在該靜電防護裝置20上。
本發明提供的該發光二極體封裝元件100，將該發光二極體封裝基板10設置成上、下基板，其中該下基板16設置至少一該腔體169用於收容該靜電防護裝置20，使該發光二極體封裝元件100在保持該發光二極體晶粒30在尺寸不變的情況下具備靜電防護的功效；該上基板12表面不需要為該靜電防護裝置20騰出位置而影響該發光二極體封裝元件100的發射光場，保證該發光二極體晶粒30位於該第一表面122的中心位置；同時使該發光二極體晶粒30的位置不需要配合該靜電防護裝置20的固晶位置作出調整，避免了該發光二極體封裝元件100的發射光場的變形；該靜電防護裝置20設置在該發光二極體晶粒30相背一側，使該發光二極體晶粒30發射光的光強度不會因該靜電防護裝置20的吸收而下降。
請參閱圖7及圖8，為本發明第二實施方式提供的發光二極體封裝元件200。本實施方式中的發光二極體封裝元件200與第一實施方式中的發光二極體封裝元件100之間的區別僅在於：該下基板16開設有兩個腔體169。該兩個腔體169均貫穿該第五表面162及該第六表面164。該第三電極146及該第四電極148從該腔體169中暴露，外露於該下基板16。該兩個腔體169設置在該下基板16的對角線上。該發光二極體封裝元件200包括兩個該靜電防護裝置20。該兩個靜電防護裝置20分別設置在該兩個腔體169內。
本實施方式中的發光二極體封裝元件200所具備的有益效果與第一實施方式中的發光二極體封裝元件100所具備的有益效果完全相同，在此不再贅述。
可以理解的係，對於本領域具有通常知識者來說，可以根據本發明的技術構思做出其他各種相應的改變與變形，而所有這些改變與變形都應屬於本發明的保護範圍。

Claims (10)

  1. 一種發光二極體封裝基板，包括上基板、下基板以及電路層，該電路層位於該上基板及該下基板之間，所述電路層分別電連接該上基板及該下基板，其中，該下基板上開設有至少一腔體，該至少一腔體貫穿該下基板，部分該電路層從該至少一腔體中暴露，外露於該下基板，該下基板上設置一第五電極、一第六電極以及複數導電孔，該第五、第六電極與該該電路層相背設置，該第五電極及該第六電極均藉由複數導通孔與該電路層電連接。
  2. 如請求項1所述的發光二極體封裝基板，其中，該上基板上設置有一第一電極以及一第二電極，該下基板上設有一第三電極、一第四電極，該第三電極及該第四電極設置在第一電極以及第二電極之相對面，該第一電極與該第二電極分別電性連接至該第三電極與該第四電極。
  3. 如請求項1所述的發光二極體封裝基板，其中，該上基板設置有複數導電孔，該複數導電孔分別電連接該電路層與該第一電極、該第二電極、該第三電極及該第四電極，使該第一電極與該第二電極可分別電性連接該第三電極與該第四電極。
  4. 一種發光二極體封裝元件，其包括：一種如請求項1至3中任意一項所述的發光二極體封裝基板；至少一穩壓二極體，每個穩壓二極體分別設置在每個腔體內並電性連接該電路層，該至少一穩壓二極體具有靜電防護功能；一發光二極體晶粒，設置在該上基板上，並電性連接該發光二極體封裝基板。
  5. 如請求項4所述發光二極體封裝元件，其中，該發光二極體晶粒的底部表面積大於該上基板頂部面積的75%。
  6. 如請求項4所述發光二極體封裝元件，其中，該發光二極體封裝元件包括一覆蓋層，該覆蓋層填充於該腔體內並覆蓋在該穩壓二極體上。
  7. 如請求項4所述發光二極體封裝元件，其中，該發光二極體封裝元件包括一螢光層，該螢光層設置在發光二極體晶粒上。
  8. 如請求項7所述發光二極體封裝元件，其中，該螢光層具有螢光微粒，該螢光微粒藉由該發光二極體晶粒的光束激發產生與該發光二極體晶粒光束互補的色光，使該發光二極體封裝元件產生白光。
  9. 如請求項4所述發光二極體封裝元件，其中，該發光二極體封裝元件包括一環繞層，該環繞層設置在該上基板上且環繞在該發光二極體晶粒四周。
  10. 如請求項9所述發光二極體封裝元件，其中，該環繞層具有光學反射特性，使自該發光二極體晶粒發射的光束集中從該螢光層方向射出該發光二極體封裝元件。
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