TWI641902B - 半色調光罩、光罩坯料、及半色調光罩的製造方法 - Google Patents

半色調光罩、光罩坯料、及半色調光罩的製造方法 Download PDF

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Publication number
TWI641902B
TWI641902B TW106145937A TW106145937A TWI641902B TW I641902 B TWI641902 B TW I641902B TW 106145937 A TW106145937 A TW 106145937A TW 106145937 A TW106145937 A TW 106145937A TW I641902 B TWI641902 B TW I641902B
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TW
Taiwan
Prior art keywords
film
semi
phase shift
transmissive
etching stopper
Prior art date
Application number
TW106145937A
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English (en)
Chinese (zh)
Other versions
TW201831984A (zh
Inventor
山田慎吾
森山久美子
美作昌宏
Original Assignee
日商Ｓｋ電子股份有限公司
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Publication date
Application filed by 日商Ｓｋ電子股份有限公司 filed Critical 日商Ｓｋ電子股份有限公司
Publication of TW201831984A publication Critical patent/TW201831984A/zh
Application granted granted Critical
Publication of TWI641902B publication Critical patent/TWI641902B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW106145937A 2016-12-28 2017-12-27 半色調光罩、光罩坯料、及半色調光罩的製造方法 TWI641902B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-256534 2016-12-28
JP2016256534A JP6259508B1 (ja) 2016-12-28 2016-12-28 ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法

Publications (2)

Publication Number Publication Date
TW201831984A TW201831984A (zh) 2018-09-01
TWI641902B true TWI641902B (zh) 2018-11-21

Family

ID=60940266

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106145937A TWI641902B (zh) 2016-12-28 2017-12-27 半色調光罩、光罩坯料、及半色調光罩的製造方法

Country Status (5)

Country Link
JP (1) JP6259508B1 (ko)
KR (1) KR102193360B1 (ko)
CN (1) CN109983402B (ko)
TW (1) TWI641902B (ko)
WO (1) WO2018123939A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109071656B (zh) 2017-01-05 2021-05-18 璟尚生物制药公司 检查点调节物拮抗剂
JP6756796B2 (ja) * 2018-10-09 2020-09-16 アルバック成膜株式会社 マスクブランクス、ハーフトーンマスク、製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100075236A1 (en) * 2008-09-19 2010-03-25 Hoya Corporation Photomask blank, photomask, and methods of manufacturing the same
TW201520683A (zh) * 2013-11-19 2015-06-01 Hoya Corp 光罩、光罩之製造方法、圖案轉印方法及顯示裝置之製造方法
JP2016021075A (ja) * 2014-03-18 2016-02-04 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

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JPH04361259A (ja) * 1991-06-07 1992-12-14 Toppan Printing Co Ltd フォトマスクブランクおよび位相シフトマスク
JPH05249652A (ja) * 1992-03-06 1993-09-28 Fujitsu Ltd 位相シフトマスクおよびその製造方法
JPH07134389A (ja) * 1993-06-25 1995-05-23 Hoya Corp 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法
KR0139689B1 (ko) * 1995-07-06 1998-07-01 구자홍 씨로코팬의 블레이드
KR100546269B1 (ko) * 1998-03-03 2006-04-21 삼성전자주식회사 하프톤 위상반전마스크 및 그 제조방법
JP2002023341A (ja) * 2000-07-11 2002-01-23 Shin Etsu Chem Co Ltd 位相シフト型フォトマスクブランクス及び位相シフト型フォトマスク
JP2005181722A (ja) * 2003-12-19 2005-07-07 Semiconductor Leading Edge Technologies Inc ハーフトーン位相シフトマスク
JP4535243B2 (ja) * 2004-05-11 2010-09-01 ルネサスエレクトロニクス株式会社 位相シフトマスクの製造方法
JP4033196B2 (ja) * 2005-01-14 2008-01-16 ソニー株式会社 フォトリソグラフィ用マスク、薄膜形成方法及び液晶表示装置の製造方法
JP2007033753A (ja) * 2005-07-26 2007-02-08 Toppan Printing Co Ltd 自己整合型位相シフトマスク及びその製造方法
JP5588633B2 (ja) 2009-06-30 2014-09-10 アルバック成膜株式会社 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
KR101168410B1 (ko) * 2009-10-26 2012-07-25 엘지이노텍 주식회사 포토마스크 및 그 제조방법
JP2011227391A (ja) 2010-04-22 2011-11-10 Toppan Printing Co Ltd 液晶表示装置製造用ハーフトーンマスクブランクス、ハーフトーンマスクおよびハーフトーンマスク製造方法
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JP2015049282A (ja) * 2013-08-30 2015-03-16 Hoya株式会社 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP2015212720A (ja) * 2014-05-01 2015-11-26 Hoya株式会社 多階調フォトマスクの製造方法、多階調フォトマスク及び表示装置の製造方法
JP2016224289A (ja) * 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
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US20100075236A1 (en) * 2008-09-19 2010-03-25 Hoya Corporation Photomask blank, photomask, and methods of manufacturing the same
TW201520683A (zh) * 2013-11-19 2015-06-01 Hoya Corp 光罩、光罩之製造方法、圖案轉印方法及顯示裝置之製造方法
JP2016021075A (ja) * 2014-03-18 2016-02-04 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

Also Published As

Publication number Publication date
WO2018123939A1 (ja) 2018-07-05
CN109983402B (zh) 2022-04-22
CN109983402A (zh) 2019-07-05
JP6259508B1 (ja) 2018-01-10
JP2018109671A (ja) 2018-07-12
KR20190047032A (ko) 2019-05-07
TW201831984A (zh) 2018-09-01
KR102193360B1 (ko) 2020-12-21

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