TWI640474B - Dielectric film and electronic parts - Google Patents

Dielectric film and electronic parts Download PDF

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Publication number
TWI640474B
TWI640474B TW106109127A TW106109127A TWI640474B TW I640474 B TWI640474 B TW I640474B TW 106109127 A TW106109127 A TW 106109127A TW 106109127 A TW106109127 A TW 106109127A TW I640474 B TWI640474 B TW I640474B
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Taiwan
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dielectric film
dielectric
film
breakdown voltage
value
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TW106109127A
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TW201739694A (zh
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內山弘基
政岡雷太郎
藤井祥平
城川真生子
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日商Ｔｄｋ股份有限公司
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Abstract

本發明的目的在於提供一種具有高相對介電常數、Q值及絕緣擊穿電壓之介電體膜及使用該介電體組成物的電子零件。上述介電體膜之特徵在於：上述介電體膜以具有NaCl型結晶構造之鹼土金屬氧化物為主成分；上述介電體膜在法線方向具有(111)配向的柱狀結構；在上述介電體膜的Cu-Kα X射線繞射圖中，(111)之繞射峰的半高寬為0.3°~2.0°。

Description

介電體膜及電子零件
本發明係關於一種介電體膜及電子零件。
為了對應以智慧手機或平板電腦為代表之移動通信設備的進一步高速大容量通信化，開始同時使用多個頻寬之MIMO技術(Multi-Input Multi-Output)之實用化。若於通信中使用的頻寬數增加，由於每一個頻寬都各自需要高頻零件，對於想在設備尺寸不變下增加零件個數來說，將要求各個零件之進一步小型化及高功能化。
作為如此等般對應高頻的電子零件，例如有雙工器(diplexer)及帶通濾波器(band-pass filter)等。這些都是由作為電容器之介電體及作為電感器之磁性體組合而構成的，不過為了得到良好之高頻特性，尋求抑制在高頻區域內各自的損耗。
如果著眼於介電體，則要求：(1)作為小型化之要求的對應，為了減少電容器部的面積而要求相對介電常數(εr)高；(2)為了使頻率的選擇性良好而要求介電損耗低，即Q值高；(3)絕緣擊穿電壓高等。
例如，一般來說非晶質SiNx膜因為其在高頻(2GHz)下的Q值高達500左右，並且絕緣擊穿電壓亦高達500V/μm~700V/μm左右而被廣泛使用於對應高頻的電子零件，但是因為相對介電 常數低至7左右，所以為了保有目標功能，大電極面積就變得必要，因而對應至小型化的要求是有困難的。另外，近年來伴隨著通信技術的進步，期望進一步提高高頻零件特性，即尋求具有高Q值及高絕緣擊穿電壓的介電體。為了對應這樣的要求，近年來開始研究將以MgO或CaO等為代表之NaCl型鹼土金屬作為主成分之介電體膜。其理由在於，在1μm以上的厚膜下具有超過上述非晶SiNx膜之特性的特性，即，具有高相對介電常數(>7)、高Q值(>500)及絕緣擊穿電壓(>700V/μm)。
在非專利文獻1中，揭示了將具有NaCl型結晶構造之MgO厚膜設成未滿1μm之薄膜的技術。揭示了所製作之MgO薄膜其厚度為260nm，在測定頻率1KHz下顯示εr=7、Q=20，絕緣擊穿電壓(Vbd)為80V/μm。
[先前技術文獻] [非專利文獻] [非專利文獻1]
Journal of Sol-Gel Science and Technology 9, 295-301(1997)『Electrical and Optical Properties of MgO Thin Film Prepared by Sol-Gel Technique』
觀察非專利文獻1中所得到之介電體膜的特性可知，一直以來MgO厚膜所得到之高相對介電常數、高Q值及絕緣擊穿電壓由於薄膜化而急劇地降低。觀察所得到之介電體膜的特性 值，係較上述非晶SiNx膜之特性低，當然對使用於高頻零件而言並不充分。如此，以NaCl型之鹼土金屬為主成分的介電體膜存在薄膜時難以顯示良好特性的技術問題。目前認為，介電體膜之膜結構沒有被最優化係原因之一。
本發明鑒於這樣的實際情況，其目的在於提供一種在以具有NaCl型結晶構造之鹼土金屬氧化物作為主成分的介電體膜中，即使於將膜厚設為1μm以下之情況下，亦具有高相對介電常數、高Q值及高絕緣擊穿電壓的介電體膜、及使用該介電體膜的電子零件。
為了達成上述目的，本發明之介電體膜其特徵在於：上述介電體膜以具有NaCl型結晶構造之鹼土金屬氧化物為主成分；上述介電體膜在法線方向具有(111)配向的柱狀結構；在上述介電體膜的Cu-Kα X射線繞射圖中，(111)的繞射峰的半高寬為0.3°~2.0°。
以具有NaCl型結晶構造之鹼土金屬氧化物作為主成分的介電體膜，係藉由具有上述特徵，即使在將膜厚設成1μm以下的情況下，亦可製作顯示高相對介電常數、高Q值及高絕緣擊穿電壓的介電體膜、及使用了該介電體膜的電子零件。
另外，藉由使用上述本發明之介電體膜，相較用於習知對應高頻之電子零件中的介電體膜，由於獲得高相對介電常數，因此可對應小型化。另外，Q值較習知之介電體膜高，即顯示更高之S/N比，進而絕緣擊穿電壓亦高，亦即可提供具有高ESD特性 的介電體共振器或介電體濾波器等電子零件。
本發明可以提供一種在以具有NaCl型結晶構造之鹼土金屬氧化物作為主成分的介電體膜中，即使在將膜厚設為1μm以下的情況下，亦可具有高相對介電常數、高Q值及高絕緣擊穿電壓的介電體膜、及使用了該介電體膜的電子零件。
1‧‧‧支撐基板
2‧‧‧基底層
3‧‧‧下部電極
4‧‧‧上部電極
5‧‧‧介電體膜
6‧‧‧微晶
10‧‧‧薄膜電容器
圖1為本發明之一實施形態之薄膜電容器的截面圖。
圖2為本發明之一實施形態之介電體膜之柱狀結構的表示圖。
圖3為本發明之一實施形態之介電體膜的Cu-Kα X射線繞射圖。
以下，針對本發明較佳之實施形態，根據情況參照附圖進行說明。
<薄膜電容器10>
圖1為使用了本發明之一實施形態之介電體膜的電子零件之一例、即薄膜電容器10的截面圖。薄膜電容器10具備積層於支撐基板1之表面的下部電極3、上部電極4及設置於下部電極3及上部電極4之間的介電體膜5。在支撐基板1及下部電極3之間為了提高支撐基板1與下部電極3的密黏性而具備基底層2。支撐基板1具有確保薄膜電容器10整體之機械強度的功能。
對於薄膜電容器的形狀沒有特別地限制，通常製成長 方體形狀。另外，對於其尺寸也沒有特別地限制，厚度及長度只要根據用途設定為適當的尺寸即可。
<支撐基板1>
用於形成圖1所示之支撐基板1的材料並沒有特別限定，可以利用作為單晶之Si單晶、SiGe單晶、GaAs單晶、InP單晶、SrTiO3單晶、MgO單晶、LaAlO3單晶、ZrO2單晶、MgAl2O4單晶、NdGaO3單晶，或者作為陶瓷多晶基板之Al2O3多晶、ZnO多晶、SiO2多晶，或者Ni、Cu、Ti、W、Mo、Al、Pt等的金屬，或者此等合金之基板等來形成支撐基板1，並沒有特別限定，此等之中，就低成本、加工性而言，通常使用Si單晶作為支撐基板1。支撐基板1係根據基板的材質而其電阻率不同。在使用電阻率低的材料作為支撐基板1之情況下，如果直接使用，則向支撐基板1側之電流洩漏會對薄膜電容器10的電特性產生影響。因此，也有對支撐基板1之表面實施絕緣處理，讓使用時之電流不流向支撐基板1的情況。例如，在使用Si單晶作為支撐基板1的情況下，可以使支撐基板1表面氧化來進行SiO2絕緣層之形成，或在支撐基板1表面形成Al2O3、SiO2、SiNx等之絕緣層，只要能確保對支撐基板1的絕緣，該絕緣層的材料或膜厚就沒有限定，但較佳為0.01μm以上。在未滿0.01μm時，由於不能確保絕緣性，因此，作為絕緣層的厚度不佳。支撐基板1的厚度只要能夠確保薄膜電容器整體之機械強度就沒有特別地限定，例如可以設定為10μm~5000μm。在未滿10μm的情況下，不能確保機械強度；如果超過5000μm，則有產生無法有助於電子零件之小型化之問題的情況。
<基底層2>
在本實施形態中，較佳為在實施過絕緣處理之支撐基板1表面具備基底層2。以提高支撐基板1與下部電極3之密黏性為目的而插入基底層2。作為其中一例，於下部電極3使用Cu的情況下，通常將Cr作為基底層2插入；於下部電極3使用Pt的情況下，通常將Ti作為基底層2插入。
上述基底層2由於以提高支撐基板1與下部電極3的密黏性為目的，因此，作為上述一例並不限定於所列舉之材料。另外，只要能夠確保支撐基板1與下部電極3的密黏性，也可以省略基底層2。
<下部電極3>
用於形成下部電極3的材料只要具有導電性即可，例如可以利用Pt、Ru、Rh、Pd、Ir、Au、Ag、Cu、Ni等的金屬或此等之合金、導電性氧化物等而形成。因此，只要選擇對應成本或對介電體膜5進行熱處理時之環境的材料即可。介電體膜5可以在大氣中、作為惰性氣體的N2或Ar、或者O2、惰性氣體與作為還原性氣體的H2之混合氣體中進行熱處理。下部電極3的膜厚只要能作為電極起作用即可，較佳為10nm以上。在未滿10nm的情況下，由於導電性變差因而不佳。另外，在支撐基板1使用利用了能作為電極使用之Cu或Ni、Pt等或氧化物導電性材料等之基板的情況下，可以省略上述的基底層2及下部電極3。
在下部電極3形成之後進行熱處理，可以謀求基底層 2與下部電極3之密黏性的提高及下部電極3之穩定性的提高。在進行熱處理的情況下，升溫速度較佳為10℃/分鐘~2000℃/分鐘，更佳為100℃/分鐘~1000℃/分鐘。熱處理時的保持溫度較佳為100℃~800℃，其保持時間較佳為0.1小時~4.0小時。若超過上述範圍，則容易附著不良或在下部電極3表面產生凹凸，從而容易降低介電體膜5的介電特性。
<介電體膜5>
介電體膜5之特徵在於：以具有NaCl型結晶構造之鹼土金屬氧化物為主成分，在法線方向具有(111)配向之柱狀結構，在介電體膜的Cu-Kα X射線繞射圖中，(111)的繞射峰之半高寬為0.3°~2.0°。
具有上述特徵之介電體膜係即使在將膜厚製成1μm以下的情況下，也能夠具有高相對介電常數、高Q值及高絕緣擊穿電壓。
本發明人等對於可得到如此效果之主要原因係認為如下。首先，對於能夠實現高相對介電常數及高Q值的主要因素進行說明。通常已知在結晶的對稱性良好、原子或分子規則地配向之狀態、即結晶性良好的情況下，具有高相對介電常數及Q值。在將結晶性良好的介電體製成薄膜時，由於習知之結晶構造容易崩潰，結晶的對稱性混亂，無法維持原子或分子的配向、即結晶性降低，因此，成為相對介電常數及Q值容易降低的傾向。
在以具有NaCl型結晶構造之鹼土金屬氧化物為主成分之介電體膜中也有如上述所示之高結晶性，因此，認為在進行了薄膜化時，在習知之技術中其結晶性低，無法得到高相對介電常數 及高Q值。因此，在進行薄膜化時，需要維持習知之高結晶性，在以具有NaCl型結晶構造之鹼土金屬氧化物作為主成分的介電體膜中，藉由在介電體膜內具備在介電體膜的法線方向上(111)配向之柱狀結構，從而能夠抑制結晶構造之混亂、即結晶性的降低，其結果，認為即使進行薄膜化也可以得到高相對介電常數及高Q值。另一方面，在不具備(111)配向之柱狀結構的情況下，進行薄膜化時結晶性降低，從而難以得到高相對介電常數及高Q值。
針對上述所示之本發明特徵之一的柱狀結構進行說明。
如圖2所示，本發明之柱狀結構是指在介電體膜之垂直方向之截面進行觀察的情況下，具備於介電體膜的厚度方向上較長之微晶6。本發明的柱狀結構成為由在介電體膜整體上沿著支撐基板表面之法線方向或±5°延伸，且圖2中記載的H與L之比、即高寬比滿足(H/L)≧2之微晶所構成的結構。
接著，對可以實現高絕緣擊穿電壓之主要原因進行說明。通常具有配向之柱狀結構的介電體膜由於是晶界大量存在於膜厚方向的結構，因此，可以說絕緣擊穿電壓低。因此，較多的情況下，藉由將構成介電體膜的晶粒的形狀球狀化，在膜厚方向以外也形成許多晶界，從而使傳導路徑複雜化，改善絕緣擊穿電壓。然而，在此方法中，由於在膜厚方向以外形成有許多晶界，因此，存在Q值容易降低之課題。因此，在本發明中，使不形成球狀之晶粒而藉由於維持構成作為本發明之特徵的柱狀結構之微晶的高寬比下，將微晶的尺寸微細化，從而不使Q值降低而實現了高絕緣擊穿電壓。
如上所述，在縮小了構成柱狀結構之微晶的尺寸之情 況下，在使用CuKα射線進行測定之情況，上述微晶的存在可以用如圖3所示之X射線繞射圖中得到之繞射峰的半高寬來確認，如果在本發明中說明，則用(111)之繞射峰的半高寬可以確認微晶的尺寸。上述半高寬的值越小，意味微晶的尺寸越大；半高寬的值越大，則意味著微晶的尺寸越小。
本發明之實施形態之介電體膜5藉由在介電體膜之Cu-Kα X射線繞射圖中(111)之繞射峰的半高寬為0.3°~2.0°，從而柱狀結構由小的微晶構成，因此，可以維持高相對介電常數及高Q值，並且可以得到更高的絕緣擊穿電壓。在上述半高寬未滿0.3°的情況下，構成柱狀結構之微晶的尺寸過大，有難以得到高絕緣擊穿電壓的傾向。另一方面，如果半高寬超過2.0°，則微晶的尺寸過小，結晶性降低，難以得到高相對介電常數及高Q值。
如上所述，以含有具高結晶性之NaCl型結晶構造之鹼土金屬氧化物為主成分之介電體膜，藉由在法線方向具備(111)配向之柱狀結構，並且在Cu-Kα X射線繞射圖中將(111)之繞射峰的半高寬設定為0.3°~2.0°，從而可以得到高相對介電常數、高Q值、及高絕緣擊穿電壓。
另外，作為本發明之較佳態樣，介電體膜5除了具有NaCl型結晶構造之鹼土金屬氧化物作為主成分以外，較佳為作為副成分含有Ta、Nb、V、Hf、Zr、Ti、Zn中之至少一種元素。
藉由作為副成分含有Ta、Nb、V、Hf、Zr、Ti、Zn中之至少一種元素，而成為容易控制構成柱狀結構之微晶尺寸，並且提高柱狀結構自身絕緣電阻之效果變得更強。其結果，與不含副成分之情況相比，含有副成分可得到更高的絕緣擊穿電壓。
另外，在將上述副成分之總含量記為x之情況下，上述總含量x相對於上述主成分較佳為0mol%<x≦20mol%之範圍。
藉由將上述副成分之總含量x設為上述之範圍，從而容易控制構成柱狀結構之微晶尺寸的作用、提高柱狀結構自身之絕緣電阻的作用、及提高以具有NaCl型結晶構造之鹼土金屬氧化物作為主成分之介電體膜所具有之結晶性的作用變強。其結果，可以維持高絕緣擊穿電壓，並且可以進一步提高Q值。
介電體膜5的厚度較佳為10nm~2000nm，進而較佳為50nm~1000nm。在未滿10nm時，容易發生絕緣擊穿；在超過2000nm的情況下，為了增大電容器的靜電容量而需要擴大電極面積，存在難以藉由電子零件之設計來小型化的情況。介電體膜厚的測量只要利用FIB(聚焦離子束)加工裝置挖掘，以SIM(掃描型離子顯微鏡)等觀察得到之截面並測長即可。
介電體膜5較佳係使用真空蒸鍍法、濺射法、PLD(脈衝雷射蒸鍍法)、MBE(分子束磊晶法)、MO-CVD(有機金屬化學氣相沉積法)、MOD(有機金屬分解法)、溶膠-凝膠法、CSD(化學溶液堆積法)等各種薄膜形成法來形成。此時使用的原料(蒸鍍材料、各種靶材或有機金屬材料等)中有時含有微量的雜質或副成分，但是只要不是會大幅度地降低絕緣性的雜質，就沒有特別的問題。
另外，本發明之介電體膜5只要不使本發明之效果即相對介電常數、Q值及絕緣擊穿電壓大幅劣化，也可以含有微量的雜質或副成分。因此，作為剩餘部分之主成分的含量並沒有特別限定，例如，相對於含有上述主成分之介電體膜整體為80%以上且100%以下。
另外，介電體膜5通常僅由本發明之介電體膜構成，但也可以是與其它介電體膜組合而成之積層結構。例如，藉由設為與現有之Si3Nx、SiOx、Al2Ox、ZrOx、Ta2Ox等非晶介電體膜或結晶膜之積層結構，而可調整介電體膜5的阻抗或相對介電常數的溫度變化。另外，藉由製成上述積層結構，也可抑制介電體膜5之大氣暴露。
<上部電極4>
於本實施形態之一例中，薄膜電容器10在介電體膜5之表面具備作為薄膜電容器10的另一個電極而發揮作用之上部電極4。用於形成上部電極4之材料只要具有導電性，則無特別限定，可利用與下部電極3同樣的材料形成上部電極4。上部電極4的膜厚只要能作為電極而發揮作用即可，較佳為10nm以上。在膜厚為10nm以下之情況，由於導電性惡化，因此，作為上部電極4係不佳。
在上述之實施形態中，例示了作為使用本發明之一實施形態之介電體膜之電子零件之一例之薄膜電容器，但作為使用了本發明之介電體膜的電子零件，並不限定於薄膜電容器，例如雙工器、帶通濾波器、平衡-不平衡轉換器(Balun)或耦合器等具有介電體膜之電子零件亦可。
[實施例]
以下，基於更詳細之實施例來說明本發明，但是本發明並不限定於此等實施例。
<實施例1><比較例1>
首先，在350μm厚之Si表面具備6μm厚之SiO2絕緣層之10mm×10mm見方的支撐基板表面上，利用濺射法依使厚度成為20nm之方式形成Cr薄膜作為基底層。
接著，於依上述所形成之Cr薄膜之基底層上，利用濺射法依使厚度成為100nm的方式形成Cu薄膜作為下部電極。
對於所形成之Cr/Cu薄膜，將升溫速度設定為10℃/分鐘、將保持溫度設定為150℃、將溫度保持時間設定為0.5小時、將環境設定為氮環境，在常壓下進行熱處理。
在介電體膜之形成中使用了濺射法。形成介電體膜所需之靶材係如下般進行製作。
首先，依成為表1所示之樣品No.1~樣品No.47之Mg、Ca、Sr、Ba、Ta、Nb、V、Hf、Zr、Ti、Zn的量之方式進行MgCO3、CaCO3、SrCO3、BaCO3、Ta2O5、Nb2O5、V2O5、HfO2、ZrO2、TiO2、ZnO的稱量，在1L的廣口塑膠罐中加入稱量後之原料粉末、無水乙醇及2mm之ZrO2珠，進行20小時的濕式混合。其後，在100℃下使混合粉末漿料乾燥20小時，將得到之混合粉末放入Al2O3坩堝中，在大氣中1250℃下保持5小時，得到鍛燒粉末。
對所得到之鍛燒粉末，使用單軸加壓擠出機得到成形體。成形條件設定為，壓力：2.0×108Pa、溫度：室溫。
其後，對於得到之成形體，將升溫速度設定為200℃/小時、將保持溫度設定為1600℃~1700℃、將溫度保持時間設定為12小時，環境為常壓下之大氣中進行燒成。
以得到之燒結體之厚度成為4mm的方式用滾筒研磨機對兩面進行研磨，得到形成介電體膜所需要之濺射用靶材。
使用依此得到之濺射用靶材，在下部電極上依成為800nm之厚度的方式在表1所示之成膜條件下使用濺射法形成介電體膜。另外，為了使一部分下部電極露出，使用金屬遮罩，形成介電體膜部分沒有成膜的區域。
另外，表中之「-」意指未含有。
介電體膜厚之測量係利用FIB掘鑿，利用SIM對所得到之截面進行觀察並測長。
成膜後之介電體膜的組成，對於所有的樣品使用XRF(螢光X射線元素分析)進行分析，確認為表1所記載之組成。
進而，對於所得到之所有介電體膜，分別藉由下述所示之方法進行結晶構造及結晶性的確認。
<柱狀結構>
柱狀結構係藉由對介電體膜之截面進行TEM觀察而確認。在暗視野圖像中測量微晶的高寬比，對於由該高寬比為2以上之微晶所構成之介電體膜，定義為具有柱狀結構之膜。
<結晶配向及結晶性>
對於介電體膜，利用X射線繞射(平行法)進行測定，得到繞射圖案。作為X射線源使用Cu-Kα射線，其測定條件設定為：電壓45kV、200mA、2θ=20°~80°之範圍。對於介電體膜之配向，比較所得到之繞射圖案中(111)的峰與(200)的峰之強度比，對於該比((111)的峰強度/(200)的峰強度)顯示1.5以上之情況定義為(111)配向。另外，作為表示結晶性之指標，測定配向之面的半高寬。在圖3中表示根據所得到之繞射圖案測定半高寬的一個例子。(實施例1樣品No.1)
接著，在所得到之上述介電體膜上使用蒸鍍裝置形成作為上部電極之Ag薄膜。藉由使用金屬遮罩以直徑成為100μm、厚度成為100nm之方式形成上部電極之形狀，得到圖1所示之結構的樣品No.1~樣品No.47。
對於所得到之所有薄膜電容器樣品，分別藉由下述所示之方法進行相對介電常數、Q值及絕緣擊穿電壓之測定。
<相對介電常數、Q值>
相對介電常數、Q值是藉由對薄膜電容器樣品，在基準溫度25℃下利用RF阻抗/材料分析儀(Agilent公司製造之4991A)，在頻率2GHz、輸入信號位準(測定電壓)0.5Vrms的條件下測定靜電容量、介電損耗(tanδ)，根據測定靜電容量及膜厚之測定結果算出相對介電常數，根據介電損耗之倒數(1/tanδ)算出Q值(沒有單位)。由於非晶SiNx膜之相對介電常數為7左右，因此在本發明中，將比其高之相對介電常數作為良好。另外，非晶SiNx膜的Q值為約500左右，但由於近年來尋求高頻特性良好之零件，因此，將Q值為850以上作為良好。
<絕緣擊穿電壓>
絕緣擊穿電壓是藉由對薄膜電容器樣品，在下部電極露出之區域及上部電極連接數位超高電阻/微電流計(ADVANTEST R8340)，以5V/秒之步調施加電壓進行測量，根據初期電阻值讀取降低2位元數時之電壓值，將該值作為樣品的擊穿電壓值(V)。將得到之擊穿電壓值(V)除以介電體膜厚得到之數值作為絕緣擊穿電壓(Vbd)(V/μm)。在表2中記載了n=5的平均值。非晶SiNx的絕緣擊穿電壓為500V/μm~700V/μm左右，由於近年來尋求ESD特性良好的零件，因此，將絕緣擊穿電壓為1250V/μm以上作為良好。
另外，表中之○是指在有(111)配向之柱狀結構的情況，×是指不含上述結構的情況。
樣品No.1~樣品No.14
根據表2，確認到含有以具有NaCl型結晶構造之鹼土金屬氧化物作為主成分之介電體膜，且於上述介電體膜在法線方向具有(111)配向之柱狀結構，並在上述介電體膜之Cu-Kα X射線繞射圖中(111)之繞射峰的半高寬為0.3°~2.0°的樣品No.1~樣品No.14，即使製成800nm之薄膜，特性亦良好，Q值為850以上，並且絕緣擊穿電壓為1250V/μm以上。
樣品No.15~樣品No.35
根據表2，確認到含有以具有NaCl型結晶構造之鹼土金屬氧化物作為主成分之介電體膜，且於上述介電體膜在法線方向具有(111)配向之柱狀結構，並在上述介電體膜之Cu-Kα X射線繞射圖中(111)之繞射峰的半高寬為0.3°~2.0°，並且作為副成分含有Ta、Nb、V、Hf、Zr、Ti、Zn中之至少一種元素的樣品No.15~樣品No.35，相比不含副成分之樣品No.1~樣品No.14，具有更高的絕緣擊穿電壓。進而，可以確認到相對於主成分以0mol%<x≦20mol%之範圍含有副成分的樣品No.15~樣品No.29，其特性特別良好，Q值為1050以上，且絕緣擊穿電壓為1350V/μm以上。
樣品No.36~樣品No.47
根據表2，作為比較例之樣品No.36~樣品No.39由於不具備(111)配向之柱狀結構，因此，薄膜化進行時結晶性降低，Q值低至850以下。作為比較例之樣品No.40及樣品No.41雖然具有(111)配向之 柱狀結構，但由於半高寬為0.2°，因此，不能對絕緣擊穿電壓有所貢獻，絕緣擊穿電壓為1240V/μm以下。另外，作為比較例之樣品No.42及樣品No.43雖然具有(111)配向之柱狀結構，半高寬為2.1°，絕緣擊穿電壓良好，但是由於微晶尺寸過小，因此，Q值為850以下。另外，可以確認到作為比較例之樣品No.44~樣品No.47不具備(111)配向之柱狀結構，另外，半高寬在本發明之範圍外，因此，不能維持高Q值及高絕緣擊穿電壓。
根據以上，可以確認在以具有NaCl型結晶構造之鹼土金屬氧化物作為主成分之介電體膜中，介電體膜在法線方向具有(111)配向之柱狀結構，在介電體膜之Cu-Kα X射線繞射圖中，於(111)之繞射峰之半高寬為0.3°~2.0°的情況下，可以維持高相對介電常數、高Q值及高絕緣擊穿電壓。
接著，對確認了具有本發明之特徵的介電體膜在各種膜厚下均有效之實施例進行說明。
<實施例2>
除了變更介電體膜之厚度以外，利用與實施例1之樣品No.29同樣的方法製作樣品，進行與實施例1同樣之評價。將結果示於表3中。
樣品No.48~樣品No.50
根據表3可以確認，即使介電體膜的膜厚不同，只要是含有以具有NaCl型結晶構造之鹼土金屬氧化物作為主成分之介電體膜，且上述介電體膜是在法線方向具有(111)配向之柱狀結構，並在上述介電體膜之Cu-Kα X射線繞射圖中，具有(111)之繞射峰的半高寬為0.3°~2.0°特徵的介電體膜，即使薄膜化至50nm也顯示大致同樣的特性。也就是說，可以確認只要是具有本發明之特徵的介電體膜，即使進行薄膜化，也幾乎沒有特性之降低，具有高相對介電常數、高Q值及高絕緣擊穿電壓。
(產業上之可利用性)
如以上所說明般，本發明係關於一種介電體膜和電子零件，本發明提供一種具有高相對介電常數、高Q值及高絕緣擊穿電壓之介電體膜及使用了該介電體膜的電子零件。由此，在使用介電體膜的電子零件中，可以實現小型化、高功能化。本發明對於例如使用介電體膜之雙工器或帶通濾波器等薄膜高頻零件等提供廣泛的新技術。

Claims (4)

  1. 一種介電體膜，係以具有NaCl型結晶構造之鹼土金屬氧化物為主成分者，其特徵在於：上述介電體膜在法線方向具有(111)配向的柱狀結構；上述柱狀結構係由在介電體膜整體上沿著支撐基板表面之法線方向或±5°延伸、且高寬比滿足≧2之微晶所構成的結構；於上述介電體膜的Cu-Kα X射線繞射圖中，(111)之繞射峰的半高寬為0.3°~2.0°，且絕緣擊穿電壓為1250V/μm以上。
  2. 如請求項1之介電體膜，其中，上述介電體膜含有Ta、Nb、V、Hf、Zr、Ti、Zn中之至少一種元素作為副成分。
  3. 如請求項2之介電體膜，其中，若將上述副成分的總含量記為x，則上述x相對於上述主成分為0mol%<x≦20mol%之範圍。
  4. 一種電子零件，其具有請求項1至3中任一項之介電體膜。
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