TWI638165B - Probe assembly and probe structure thereof - Google Patents

Probe assembly and probe structure thereof Download PDF

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TWI638165B
TWI638165B TW106129985A TW106129985A TWI638165B TW I638165 B TWI638165 B TW I638165B TW 106129985 A TW106129985 A TW 106129985A TW 106129985 A TW106129985 A TW 106129985A TW I638165 B TWI638165 B TW I638165B
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layer
disposed
probe
body portion
metal body
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TW201913106A (en
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蘇偉誌
謝智鵬
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中華精測科技股份有限公司
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Abstract

本發明公開一種探針組件及其探針結構。探針結構包括一金屬主體部、一披覆層以及一絕緣層。金屬主體部具有一環繞表面。披覆層設置在金屬主體部的環繞表面上。絕緣層設置在披覆層上。藉此,本發明能避免相鄰的探針結構之間電性接觸所造成的短路現象。 The invention discloses a probe assembly and a probe structure thereof. The probe structure includes a metal body portion, a cladding layer, and an insulating layer. The metal body portion has a surrounding surface. The cladding layer is disposed on the surrounding surface of the metal body portion. The insulating layer is disposed on the cladding layer. Thereby, the present invention can avoid the short circuit caused by the electrical contact between adjacent probe structures.

Description

探針組件及其探針結構 Probe assembly and probe structure

本發明涉及一種探針組件及其探針結構,特別是涉及一種應用於晶圓探針卡的探針組件及其探針結構。 The present invention relates to a probe assembly and a probe structure thereof, and more particularly to a probe assembly applied to a wafer probe card and a probe structure thereof.

首先,現行主要的圓形測試探針與微機電(Microelectromechanical Systems,MEMS)矩形測試探針均有機械特性不佳或耐電流性不佳的問題,而探針本身的特性不佳則會降低半導體製程良率與測試準確度。以現有技術而言,現有的晶圓探針卡的測試探針在量測壽命上會受到環境溫度、機械作動與耐電流的影響,單一結構的測試探針並無法克服上述影響所造成的量測誤差。 First of all, the current main circular test probes and Microelectromechanical Systems (MEMS) rectangular test probes have poor mechanical properties or poor current resistance, while the poor characteristics of the probe itself can reduce the semiconductor process. Yield and test accuracy. In the prior art, the test probe of the existing wafer probe card is affected by the ambient temperature, the mechanical actuation and the current resistance during the measurement life, and the test probe of a single structure cannot overcome the amount caused by the above influence. Measuring error.

另外,現有測試探針在晶圓測試時,探針卡會提供一下壓力以使得測試探針能劃破錫球表面的氧化層而達到測試目的。但是,由於現有測試探針本身的硬度仍然不足,在連續的機械作動下很容易造成機械疲乏,進而導致測試探針彎曲後無法回復到原本的針型。此外,現有測試探針也容易因為持續的彎曲作動與通電流後所產生的焦耳熱而造成金屬探針損毀。再者,當測試探針下壓劃破錫球表面氧化層時,陣列排列的測試探針會同時有彎曲作動,但因單位陣列中的探針數目多,可能會造成測試探針在作動時出現短路現象而影響量測甚至損壞電路功能。 In addition, when the existing test probe is tested on the wafer, the probe card will provide a pressure to enable the test probe to scratch the oxide layer on the surface of the solder ball for testing purposes. However, since the hardness of the existing test probe itself is still insufficient, it is easy to cause mechanical fatigue under continuous mechanical operation, and the test probe cannot be returned to the original needle shape after being bent. In addition, the existing test probes are also prone to damage of the metal probe due to the continuous bending action and the Joule heat generated after the current is passed. Furthermore, when the test probe is pressed against the surface oxide layer of the solder ball, the array of test probes will be bent at the same time, but because of the large number of probes in the unit array, the test probe may be caused to be active. A short circuit phenomenon affects the measurement and even damages the circuit function.

再者,由於目前待側物的尺寸日益縮小,但現行測試探針的主要材質為金屬材料,所以當每一個測試探針之間的間距太近, 將會導致測試探針在彎曲時產生短路現象,使得探針卡的可靠性不彰。同時,現有測試探針的散熱性、導電性與機械特性三者也無法同時兼具。因此,如何提出一種能提升可靠性、導電性、散熱性及/或機械強度的探針組件及其探針結構,以克服上述的缺陷,已然成為該項所屬技術領域人士所欲解決的重要課題。 Furthermore, since the size of the object to be side is shrinking, the main material of the current test probe is a metal material, so when the distance between each test probe is too close, This will cause the test probe to short-circuit when bent, making the probe card less reliable. At the same time, the heat dissipation, electrical conductivity and mechanical properties of the existing test probes cannot be combined at the same time. Therefore, how to propose a probe assembly and a probe structure capable of improving reliability, electrical conductivity, heat dissipation and/or mechanical strength to overcome the above-mentioned drawbacks has become an important subject to be solved by those skilled in the art. .

本發明所要解決的技術問題在於,針對現有技術的不足提供一種探針組件及其探針結構。 The technical problem to be solved by the present invention is to provide a probe assembly and a probe structure thereof for the deficiencies of the prior art.

為了解決上述的技術問題,本發明所採用的其中一技術方案是,提供一種探針結構,其包括一金屬主體部、一披覆層以及一絕緣層。所述金屬主體部具有一環繞表面。所述披覆層設置在所述金屬主體部的所述環繞表面上。所述絕緣層設置在所述披覆層上。 In order to solve the above technical problem, one of the technical solutions adopted by the present invention is to provide a probe structure including a metal body portion, a cladding layer and an insulating layer. The metal body portion has a surrounding surface. The cladding layer is disposed on the surrounding surface of the metal body portion. The insulating layer is disposed on the cladding layer.

本發明所採用的另外一技術方案是,提供一種探針組件,其包括一承載座以及多個探針結構。多個所述探針結構設置在所述承載座上,每一個所述探針結構包括一金屬主體部、一披覆層以及一絕緣層。其中,所述金屬主體部具有一環繞表面,所述披覆層設置在所述金屬主體部的所述環繞表面上,所述絕緣層設置在所述披覆層上。 Another technical solution adopted by the present invention is to provide a probe assembly including a carrier and a plurality of probe structures. A plurality of the probe structures are disposed on the carrier, each of the probe structures including a metal body portion, a cladding layer, and an insulating layer. Wherein the metal body portion has a surrounding surface, the coating layer is disposed on the surrounding surface of the metal body portion, and the insulating layer is disposed on the coating layer.

本發明的其中一有益效果在於,本發明實施例所提供的探針組件及其探針結構,其能利用“所述披覆層設置在所述金屬主體部的所述環繞表面上”以及“所述絕緣層設置在所述披覆層上”的技術方案,而能提升探針結構的可靠性、導電性、散熱性及/或機械強度。 One of the beneficial effects of the present invention is that the probe assembly and the probe structure thereof provided by the embodiments of the present invention can utilize "the cover layer is disposed on the surrounding surface of the metal body portion" and " The technical solution of the insulating layer disposed on the coating layer can improve the reliability, conductivity, heat dissipation and/or mechanical strength of the probe structure.

為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,然而所提供的附圖僅用於提供參考與說明用,並非用來對本發明加以限制。 For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

M‧‧‧探針組件 M‧‧‧ probe assembly

U‧‧‧探針結構 U‧‧‧ probe structure

1‧‧‧金屬主體部 1‧‧‧Metal body

11‧‧‧環繞表面 11‧‧‧ Surround surface

2‧‧‧披覆層 2‧‧‧coating

21‧‧‧強化層 21‧‧‧ Strengthening layer

211‧‧‧外表面 211‧‧‧ outer surface

22‧‧‧抗氧化層 22‧‧‧Antioxidant layer

221‧‧‧外表面 221‧‧‧ outer surface

23‧‧‧石墨烯層 23‧‧‧graphene layer

231‧‧‧外表面 231‧‧‧ outer surface

24‧‧‧散熱層 24‧‧‧heat layer

241‧‧‧外表面 241‧‧‧ outer surface

3‧‧‧絕緣層 3‧‧‧Insulation

T‧‧‧承載座 T‧‧‧ bearing seat

1t‧‧‧預定寬度 1t‧‧‧Predetermined width

21t、22t、23t、24t、3t‧‧‧預定厚度 21t, 22t, 23t, 24t, 3t‧‧‧ predetermined thickness

X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction

圖1A為本發明第一實施例的探針結構的其中一立體示意圖。 1A is a perspective view showing one of the probe structures of the first embodiment of the present invention.

圖1B為本發明第一實施例的探針結構的另外一立體示意圖。 FIG. 1B is another perspective view of the probe structure of the first embodiment of the present invention.

圖2為圖1A的II-II剖線的側視剖面示意圖。 Figure 2 is a side cross-sectional view taken along line II-II of Figure 1A.

圖3為圖2的III部分的局部放大示意圖。 Fig. 3 is a partially enlarged schematic view showing a portion III of Fig. 2;

圖4為本發明第三實施例的探針結構的其中一實施方式的局部放大示意圖。 4 is a partially enlarged schematic view showing one embodiment of a probe structure according to a third embodiment of the present invention.

圖5為本發明第三實施例的探針結構的另外一實施方式的局部放大示意圖。 FIG. 5 is a partially enlarged schematic view showing another embodiment of a probe structure according to a third embodiment of the present invention.

圖6為本發明第四實施例的探針結構的其中一實施方式的局部放大示意圖。 FIG. 6 is a partially enlarged schematic view showing an embodiment of a probe structure according to a fourth embodiment of the present invention.

圖7為本發明第四實施例的探針結構的另外一實施方式的局部放大示意圖。 FIG. 7 is a partially enlarged schematic view showing another embodiment of a probe structure according to a fourth embodiment of the present invention.

圖8為本發明第五實施例的探針組件的示意圖。 Figure 8 is a schematic illustration of a probe assembly in accordance with a fifth embodiment of the present invention.

以下是通過特定的具體實例來說明本發明所公開有關“探針組件及其探針結構”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的精神下進行各種修飾與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,予以聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的技術範圍。 The following is a description of the embodiments of the present invention relating to the "probe assembly and its probe structure" by specific specific examples, and those skilled in the art can understand the advantages and effects of the present invention from the disclosure of the present specification. The present invention may be carried out or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. In addition, the drawings of the present invention are merely illustrative and are not intended to be construed in terms of actual dimensions. The following embodiments will further explain the related technical content of the present invention, but the disclosure is not intended to limit the technical scope of the present invention.

[第一實施例] [First Embodiment]

首先,請參閱圖1A、圖1B及圖8所示,圖1A及圖1B分別為本發明實施例探針結構的立體示意圖,圖8為本發明實施例的探針組件的示意圖。本發明提供一種探針組件M及其探針結構U,以下將先介紹本發明探針結構U的主要技術特徵。 1A, FIG. 1B and FIG. 8 are respectively a perspective view of a probe structure according to an embodiment of the present invention, and FIG. 8 is a schematic diagram of a probe assembly according to an embodiment of the present invention. The present invention provides a probe assembly M and its probe structure U. The main technical features of the probe structure U of the present invention will be described below.

接著,請復參閱圖1A及圖1B所示,並同時參閱圖2所示,圖2為圖1A的II-II剖線的側視剖面示意圖。探針結構U可包括一金屬主體部1、一披覆層2以及一絕緣層3。舉例來說,探針結構U的外型可以如圖1A所示的為矩形柱狀體,或者是如圖1B所示的為圓形柱狀體,然本發明不以此為限,以下將以探針結構U具有矩形狀剖面的實施方式進行說明。 1A and FIG. 1B, and FIG. 2, FIG. 2 is a side cross-sectional view taken along line II-II of FIG. 1A. The probe structure U may include a metal body portion 1, a cladding layer 2, and an insulating layer 3. For example, the shape of the probe structure U may be a rectangular column as shown in FIG. 1A or a circular column as shown in FIG. 1B. However, the present invention is not limited thereto. An embodiment in which the probe structure U has a rectangular cross section will be described.

承上述,請復參閱圖2所示,金屬主體部1可具有一環繞表面11,披覆層2可設置在金屬主體部1的環繞表面11上,此外,絕緣層3可設置在披覆層2上。以本發明實施例而言,披覆層2優選可如圖2所示地完全圍繞在金屬主體部1的周圍,且絕緣層3也可以完全圍繞在披覆層2的一外表面(圖中未標號)的周圍。換句話說,披覆層2可覆蓋在金屬主體部1的周圍,且絕緣層3也可覆蓋在披覆層2的外表面的周圍。另外,舉例來說,披覆層2及絕緣層3的設置方式可以利用沉積(Deposition)的方式形成,然本發明不以此為限。 In view of the above, please refer to FIG. 2, the metal body portion 1 may have a surrounding surface 11, and the cladding layer 2 may be disposed on the surrounding surface 11 of the metal body portion 1. Further, the insulating layer 3 may be disposed on the cladding layer. 2 on. In the embodiment of the present invention, the cladding layer 2 may preferably completely surround the metal body portion 1 as shown in FIG. 2, and the insulating layer 3 may also completely surround an outer surface of the cladding layer 2 (in the figure) Not marked around). In other words, the cladding layer 2 may cover the periphery of the metal body portion 1, and the insulating layer 3 may also cover the periphery of the outer surface of the cladding layer 2. In addition, for example, the manner in which the cladding layer 2 and the insulating layer 3 are disposed may be formed by deposition, but the invention is not limited thereto.

接著,請復參閱圖2所示,舉例來說,金屬主體部1可由導電材料所製成以具有導電性,且金屬主體部1的電阻率(Resistivity)可小於5 x 102Ωm(歐姆米),金屬主體部1的材料可例如但不限於為:金(Au)、銀(Ag)、銅(Cu)、鎳(Ni)、鈷(Co)或其合金,優選地,金屬主體部1的材料可為銅或鎳鈷合金。另外,絕緣層3的電阻率可大於或等於108Ωm,優選地,絕緣層3的電阻率可大於或等於109Ωm。另外,絕緣層3的材料可例如但不限於為:高分子材料、陶瓷或對二甲苯聚合物(聚對二甲苯,Poly-p-xylene)等材料,優選地,以氧化鋁(Aluminium oxide,或稱三氧化二鋁,Al2O3)為佳。進一步來說,金屬主體部1可具有一介於10μm(Micrometer,微米)至80μm之間的預定寬度1t,絕緣層3可具有一介於0.1μm至10μm之間的預定厚度3t,優選地,預定厚度3t可介於0.5μm至5μm之間,然本發明不以上述尺寸為限制。 Next, referring to FIG. 2, for example, the metal body portion 1 may be made of a conductive material to have conductivity, and the metal body portion 1 may have a resistivity (Resistivity) of less than 5 x 10 2 Ωm (ohm meters). The material of the metal body portion 1 may be, for example but not limited to, gold (Au), silver (Ag), copper (Cu), nickel (Ni), cobalt (Co) or an alloy thereof, preferably, the metal body portion 1 The material can be copper or nickel-cobalt alloy. In addition, the resistivity of the insulating layer 3 may be greater than or equal to 10 8 Ωm, and preferably, the resistivity of the insulating layer 3 may be greater than or equal to 10 9 Ωm. In addition, the material of the insulating layer 3 may be, for example but not limited to, a polymer material, a ceramic or a material such as a para-xylene polymer (Poly-p-xylene), and preferably, an aluminum oxide (Aluminium oxide, Or aluminum oxide, Al 2 O 3 ) is preferred. Further, the metal body portion 1 may have a predetermined width 1t between 10 μm (micrometer) and 80 μm, and the insulating layer 3 may have a predetermined thickness 3t between 0.1 μm and 10 μm, preferably a predetermined thickness. 3t may be between 0.5 μm and 5 μm, although the invention is not limited by the above dimensions.

接著,請復參閱圖2所示,舉例來說,披覆層2可以為具有作為強化探針結構U整體的強化層、具有抗氧化效果的抗氧化層、具有散熱效果的散熱層或者是一石墨烯層。另外,舉例來說,強化層、抗氧化層、散熱層及石墨烯層可具有導電性,然本發明不以此為限。 Next, please refer to FIG. 2 . For example, the cladding layer 2 may be a reinforcing layer having a whole as the reinforcing probe structure U, an anti-oxidation layer having an anti-oxidation effect, a heat dissipation layer having a heat dissipation effect, or a Graphene layer. In addition, for example, the reinforcing layer, the anti-oxidation layer, the heat dissipation layer, and the graphene layer may have conductivity, but the invention is not limited thereto.

進一步而言,請復參閱圖2所示,強化層可為具有高機械強度的材料,以增加探針結構U整體的硬度與剛性。強化層可例如是具有高楊氏模量(或可稱:楊氏模數,Young's modulus)的材料,舉例來說,強化層的楊氏模量可為100GPa以上。此外,強化層的材料可為合金材料、矽化物或鑽石膜,例如可選自銠(Rh)、鉑(Pt)、銥(Ir)、鈀(Pd)、鎳、鈷或其合金,優選地,強化層的材料可為鈀鎳合金或鎳鈷合金,然本發明不以此為限。更進一步來說,抗氧化層所指的是其材料表面不具活性,其氧化還原電位(Redox potential或Oxidation-reduction potential)大於或等於-1.66V,不易與氧氣產生反應生成氧化物。舉例來說,抗氧化層可為一抗腐蝕金屬(貴金屬,Noble metal),舉例來說,抗氧化層的材料可例如但不限於為金、銀、鈀或鉑。更進一步來說,散熱層的熱導率可大於200W/mK,舉例來說,散熱層的材料可為氧化鋁、氮化矽、銅鋁合金、陶瓷或鑽石薄膜等,然本發明不以此為限。再者,值得說明的是,在其他實施方式中,披覆層2可為具有石墨烯材料(Graphene)的石墨烯層,以提升探針結構U整體的導電性、散熱性以及機械特性。 Further, referring to FIG. 2, the reinforcing layer may be a material having high mechanical strength to increase the hardness and rigidity of the probe structure U as a whole. The reinforcing layer may be, for example, a material having a high Young's modulus (or may be referred to as Young's modulus). For example, the reinforcing layer may have a Young's modulus of 100 GPa or more. In addition, the material of the reinforcing layer may be an alloy material, a telluride or a diamond film, for example, may be selected from rhodium (Rh), platinum (Pt), iridium (Ir), palladium (Pd), nickel, cobalt or alloys thereof, preferably The material of the reinforcing layer may be a palladium nickel alloy or a nickel cobalt alloy, but the invention is not limited thereto. Furthermore, the antioxidant layer refers to the surface of the material which is not active, and its redox potential or Oxidation-reduction potential is greater than or equal to -1.66 V, which is difficult to react with oxygen to form an oxide. For example, the oxidation resistant layer can be a corrosion resistant metal (Noble metal). For example, the material of the oxidation resistant layer can be, for example but not limited to, gold, silver, palladium or platinum. Furthermore, the thermal conductivity of the heat dissipation layer may be greater than 200 W/mK. For example, the material of the heat dissipation layer may be aluminum oxide, tantalum nitride, copper aluminum alloy, ceramic or diamond film, etc., but the present invention does not Limited. Furthermore, it should be noted that in other embodiments, the cladding layer 2 may be a graphene layer having a graphene material to improve the electrical conductivity, heat dissipation, and mechanical properties of the probe structure U as a whole.

值得一提的是,以第一實施例而言,強化層可具有一介於0.1μm至10μm之間的預定厚度,抗氧化層可具有一介於0.1μm至3μm之間的預定厚度,石墨烯層可具有一介於0.34nm(nanometer,奈米)至3μm之間的預定厚度,散熱層可具有一介於0.1μm至10μm之間的預定厚度,然本發明不以此為限。 It is worth mentioning that, in the first embodiment, the reinforcing layer may have a predetermined thickness of between 0.1 μm and 10 μm, and the oxidation resistant layer may have a predetermined thickness of between 0.1 μm and 3 μm, and the graphene layer There may be a predetermined thickness between 0.34 nm (nanometer) and 3 μm, and the heat dissipation layer may have a predetermined thickness of between 0.1 μm and 10 μm, although the invention is not limited thereto.

須說明的是,雖然上述內容是以披覆層2為強化層、抗氧化 層、散熱層或者是石墨烯層進行說明,但是在其他實施方式中,披覆層2也可以為多層複合材料層。也就是說,披覆層2可以由兩層以上不同材料所組成,即,披覆層2可為選自一強化層、一抗氧化層、一散熱層以及一石墨烯層中的其中兩者以上依序堆疊所組成的多層結構,後續實施例將進一步說明當披覆層2具有多層結構時的實施方式。 It should be noted that although the above content is based on the coating layer 2 as a strengthening layer, anti-oxidation The layer, the heat dissipation layer or the graphene layer will be described, but in other embodiments, the cladding layer 2 may also be a multilayer composite layer. That is, the cladding layer 2 may be composed of two or more different materials, that is, the cladding layer 2 may be selected from a reinforcing layer, an antioxidant layer, a heat dissipation layer, and a graphene layer. The above-described multilayer structure is sequentially stacked, and the subsequent embodiment will further explain an embodiment when the cladding layer 2 has a multilayer structure.

[第二實施例] [Second embodiment]

首先,請參閱圖3所示,並一併配合圖2所示,圖3為圖2的III部分的局部放大示意圖,然而,須說明的是,圖3並非為圖2的III部分的實際局部放大示意圖,圖3主要是為了說明探針結構U在其他實施方式中的剖面型態。以下將進一步說明披覆層2具有多層結構時的實施方式,換句話說,披覆層2可為選自一強化層21、一抗氧化層22、一散熱層24以及一石墨烯層23中的其中兩者以上依序堆疊所組成的多層結構,第二實施例將以強化層21、抗氧化層22、石墨烯層23以及散熱層24依序堆疊在金屬主體部1上,且位於金屬主體部1與絕緣層3之間的實施方式進行說明。 First, please refer to FIG. 3, and together with FIG. 2, FIG. 3 is a partial enlarged view of the portion III of FIG. 2. However, it should be noted that FIG. 3 is not an actual part of the portion III of FIG. An enlarged schematic view, FIG. 3 is primarily for illustrating the profile of the probe structure U in other embodiments. Hereinafter, an embodiment in which the cladding layer 2 has a multilayer structure will be further described. In other words, the cladding layer 2 may be selected from a strengthening layer 21, an oxidation resistant layer 22, a heat dissipation layer 24, and a graphene layer 23. The two or more layers are sequentially stacked to form a multi-layered structure. The second embodiment is sequentially stacked on the metal body portion 1 with the strengthening layer 21, the oxidation resistant layer 22, the graphene layer 23, and the heat dissipation layer 24, and is located on the metal. An embodiment between the main body portion 1 and the insulating layer 3 will be described.

詳細來說,請復參閱圖3所示,探針結構U可包括一金屬主體部1、一設置在金屬主體部1上且包覆金屬主體部1的披覆層2以及一設置在披覆層2上且包覆披覆層2的絕緣層3。披覆層2可具有一強化層21、一抗氧化層22、一石墨烯層23以及一散熱層24,強化層21可設置在金屬主體部1的環繞表面11上,抗氧化層22可設置在強化層21的一外表面211上,石墨烯層23可設置在抗氧化層22的一外表面221上,散熱層24可設置在石墨烯層23的一外表面231上,絕緣層3可設置在散熱層24的一外表面241上。另外,須說明的是,在其他實施方式中,石墨烯層23可選擇性的依需求決定是否設置,且也不限於須設置在抗氧化層 22與散熱層24之間。也就是說,石墨烯層23也可以設置在抗氧化層22與強化層21之間,本發明不以石墨烯層23的設置位置為限。 In detail, as shown in FIG. 3, the probe structure U may include a metal body portion 1, a coating layer 2 disposed on the metal body portion 1 and covering the metal body portion 1, and a cover layer disposed thereon. The insulating layer 3 on the layer 2 and covering the cladding layer 2. The coating layer 2 may have a strengthening layer 21, an oxidation resistant layer 22, a graphene layer 23, and a heat dissipation layer 24, and the strengthening layer 21 may be disposed on the surrounding surface 11 of the metal body portion 1, and the oxidation resistant layer 22 may be disposed. On an outer surface 211 of the reinforcing layer 21, the graphene layer 23 may be disposed on an outer surface 221 of the anti-oxidation layer 22, and the heat dissipation layer 24 may be disposed on an outer surface 231 of the graphene layer 23, and the insulating layer 3 may be It is disposed on an outer surface 241 of the heat dissipation layer 24. In addition, it should be noted that, in other embodiments, the graphene layer 23 can be selectively determined according to requirements, and is not limited to being disposed on the anti-oxidation layer. 22 is between the heat dissipation layer 24. That is, the graphene layer 23 may be disposed between the oxidation resistant layer 22 and the strengthening layer 21, and the present invention is not limited to the position at which the graphene layer 23 is disposed.

藉此,通過披覆層2的設置後,可通過強化層21而強化探針結構U整體的機械強度特性,也可以通過抗氧化層22而保護位於抗氧化層22內部的強化層21及金屬主體部1,進而減少探針結構受到氧化的影響,同時能強化探針結構U的導電性。也就是說,可通過抗氧化層22設置在強化層21的外表面211上,而使得抗氧化層22作為保護位於抗氧化層22內部的各層結構之用。此外,通過石墨烯層23的設置後,可提升導電性、散熱性以及機械強度特性之強化。再者,還可以通過散熱層24而提升探針結構U整體的散熱效率,以延長探針結構U的壽命及提高量測精度。 Thereby, after the provision of the cladding layer 2, the mechanical strength characteristics of the entire probe structure U can be enhanced by the reinforcing layer 21, and the reinforcing layer 21 and the metal located inside the oxidation resistant layer 22 can be protected by the oxidation resistant layer 22. The body portion 1 further reduces the influence of the probe structure on oxidation while enhancing the conductivity of the probe structure U. That is, the oxidation resistant layer 22 can be disposed on the outer surface 211 of the reinforcing layer 21, so that the oxidation resistant layer 22 serves as a layer structure for protecting the inside of the oxidation resistant layer 22. Further, after the arrangement of the graphene layer 23, the enhancement of conductivity, heat dissipation, and mechanical strength characteristics can be enhanced. Furthermore, the heat dissipation efficiency of the probe structure U can be improved by the heat dissipation layer 24 to extend the life of the probe structure U and improve the measurement accuracy.

承上述,以圖3的實施方式來說,強化層21的楊氏模量可為100GPa以上。此外,強化層21的材料可為合金材料、矽化物或鑽石膜,例如可選自銠(Rh)、鉑(Pt)、銥(Ir)、鈀(Pd)、鎳、鈷或其合金,優選地,強化層21的材料可為鈀鎳合金或鎳鈷合金。另外,以第二實施例而言,強化層21可具有一介於0.5μm至5μm之間的預定厚度21t。進一步來說,抗氧化層所指的是其材料表面不具活性,其氧化還原電位大於或等於-1.66V,不易與氧氣產生反應生成氧化物。舉例來說,抗氧化層22可為一抗腐蝕金屬(貴金屬,Noble metal),舉例來說,抗氧化層22的材料可例如但不限於為金、銀、鈀或鉑。另外,以第二實施例而言,抗氧化層22可具有一介於0.5μm至5μm之間的預定厚度22t。更進一步來說,石墨烯層23可泛指1至10層左右,其具有一介於0.34nm至5nm之間的預定厚度23t。更進一步來說,散熱層24的熱導率大於200W/mK,舉例來說,散熱層24的材料可為氧化鋁、氮化矽、銅鋁合金、陶瓷或鑽石薄膜,此外,散熱層24可具有一介於0.5μm至5μm之間的預定厚度24t。更進一步地,絕緣層3可具有一介 於0.5μm至5μm之間的預定厚度3t。然而,須說明的是,本發明不以上述尺寸或材料為限。 In view of the above, in the embodiment of FIG. 3, the Young's modulus of the reinforcing layer 21 may be 100 GPa or more. In addition, the material of the strengthening layer 21 may be an alloy material, a telluride or a diamond film, for example, may be selected from rhodium (Rh), platinum (Pt), iridium (Ir), palladium (Pd), nickel, cobalt or alloys thereof, preferably. The material of the reinforcing layer 21 may be a palladium nickel alloy or a nickel cobalt alloy. Further, in the second embodiment, the reinforcing layer 21 may have a predetermined thickness 21t of between 0.5 μm and 5 μm. Further, the anti-oxidation layer means that the surface of the material is not active, and its oxidation-reduction potential is greater than or equal to -1.66 V, and it is difficult to react with oxygen to form an oxide. For example, the oxidation resistant layer 22 can be a corrosion resistant metal (Noble metal). For example, the material of the oxidation resistant layer 22 can be, for example but not limited to, gold, silver, palladium or platinum. Further, in the second embodiment, the oxidation resistant layer 22 may have a predetermined thickness 22t of between 0.5 μm and 5 μm. Further, the graphene layer 23 can be broadly referred to as about 1 to 10 layers having a predetermined thickness 23t between 0.34 nm and 5 nm. Furthermore, the thermal conductivity of the heat dissipation layer 24 is greater than 200 W/mK. For example, the material of the heat dissipation layer 24 may be aluminum oxide, tantalum nitride, copper aluminum alloy, ceramic or diamond film. There is a predetermined thickness 24t between 0.5 μm and 5 μm. Further, the insulating layer 3 may have a dielectric layer A predetermined thickness of 3t between 0.5 μm and 5 μm. However, it should be noted that the present invention is not limited to the above dimensions or materials.

承上述,須說明的是,第二實施例所提供的金屬主體部1、強化層21、抗氧化層22、石墨烯層23、散熱層24以及絕緣層3的特性與前述實施例相仿,在此不再贅述。另外,值得一提的是,在其他實施方式中,也可以依據需求而選擇應當設置強化層21、抗氧化層22、石墨烯層23以及散熱層24中的那幾個依序堆疊在金屬主體部1上,即,可依需求而選擇性的在披覆層2中設置不同特性的多層結構。 In view of the above, it should be noted that the characteristics of the metal body portion 1, the reinforcing layer 21, the oxidation resistant layer 22, the graphene layer 23, the heat dissipation layer 24, and the insulating layer 3 provided in the second embodiment are similar to those of the foregoing embodiment. This will not be repeated here. In addition, it is worth mentioning that, in other embodiments, the reinforcing layer 21, the anti-oxidation layer 22, the graphene layer 23, and the heat dissipation layer 24 should be sequentially stacked on the metal body according to requirements. On the part 1, that is, a multilayer structure of different characteristics can be selectively provided in the cladding layer 2 as needed.

另外,須說明的是,本發明不以上述披覆層2中的各層結構的排列順序為限,也就是說,在其他實施方式中,披覆層2可包括一抗氧化層22、一強化層21以及一散熱層24。抗氧化層22可設置在金屬主體部1的環繞表面11上,強化層21可設置在抗氧化層22的一外表面221上,散熱層24可設置在強化層21的一外表面211上,絕緣層3可設置在散熱層24的一外表面241上。同時,披覆層2還可進一步包括一石墨烯層23,石墨烯層23可選擇性地設置在抗氧化層22與強化層21之間、設置在強化層21與散熱層24之間或者是設置在散熱層24與絕緣層3之間,本發明不以此為限制。 In addition, it should be noted that the present invention is not limited to the order of arrangement of the layer structures in the above-mentioned coating layer 2, that is, in other embodiments, the coating layer 2 may include an antioxidant layer 22, a strengthening Layer 21 and a heat dissipation layer 24. The anti-oxidation layer 22 may be disposed on the surrounding surface 11 of the metal body portion 1. The reinforcing layer 21 may be disposed on an outer surface 221 of the oxidation resistant layer 22, and the heat dissipation layer 24 may be disposed on an outer surface 211 of the strengthening layer 21. The insulating layer 3 may be disposed on an outer surface 241 of the heat dissipation layer 24. Meanwhile, the cladding layer 2 may further include a graphene layer 23 selectively disposed between the oxidation resistant layer 22 and the strengthening layer 21, between the strengthening layer 21 and the heat dissipation layer 24, or It is disposed between the heat dissipation layer 24 and the insulating layer 3, and the invention is not limited thereto.

[第三實施例] [Third embodiment]

首先,請參閱圖4及圖5所示,並一併配合圖2及圖3所示,圖4及5為探針結構U在其他實施方式中的剖面型態。披覆層2可為選自一強化層、一抗氧化層以及一散熱層中的其中兩者以上依序堆疊所組成的多層結構。由圖4及圖5與圖3的比較可知,第三實施例與第二實施例最大的差別在於:第三實施例中可以選擇性地不設置石墨烯層23。另外,須說明的是,第三實施例所提供的金屬主體部1、強化層21、抗氧化層22、散熱層24以及絕緣 層3的特性與前述實施例相仿,在此不再贅述。 First, referring to FIG. 4 and FIG. 5, and together with FIG. 2 and FIG. 3, FIGS. 4 and 5 are cross-sectional views of the probe structure U in other embodiments. The cladding layer 2 may be a multilayer structure composed of a plurality of layers selected from a reinforcing layer, an oxidation resistant layer, and a heat dissipation layer. 4 and FIG. 5 and FIG. 3, the greatest difference between the third embodiment and the second embodiment is that the graphene layer 23 can be selectively omitted in the third embodiment. In addition, it should be noted that the metal body portion 1, the reinforcing layer 21, the oxidation resistant layer 22, the heat dissipation layer 24, and the insulation provided by the third embodiment are provided. The characteristics of layer 3 are similar to those of the previous embodiment, and will not be described herein.

接著,請復參閱圖4所示,披覆層2可具有一強化層21、一抗氧化層22以及一散熱層24,強化層21可設置在金屬主體部1的環繞表面11上,抗氧化層22可設置在強化層21的一外表面211上,散熱層24可設置在抗氧化層22的一外表面221上,絕緣層3可設置在散熱層24的一外表面241上。 Next, as shown in FIG. 4, the cladding layer 2 may have a strengthening layer 21, an anti-oxidation layer 22, and a heat dissipation layer 24, which may be disposed on the surrounding surface 11 of the metal body portion 1, and is resistant to oxidation. The layer 22 may be disposed on an outer surface 211 of the reinforcing layer 21, the heat dissipation layer 24 may be disposed on an outer surface 221 of the oxidation resistant layer 22, and the insulating layer 3 may be disposed on an outer surface 241 of the heat dissipation layer 24.

另外,請復參閱圖5所示,抗氧化層22可設置在金屬主體部1的環繞表面11上,強化層21可設置在抗氧化層22的一外表面221上,散熱層24可設置在強化層21的一外表面211上,絕緣層3可設置在散熱層24的一外表面241上。 In addition, as shown in FIG. 5, the oxidation resistant layer 22 may be disposed on the surrounding surface 11 of the metal body portion 1, and the reinforcing layer 21 may be disposed on an outer surface 221 of the oxidation resistant layer 22, and the heat dissipation layer 24 may be disposed on On an outer surface 211 of the reinforcing layer 21, the insulating layer 3 may be disposed on an outer surface 241 of the heat dissipation layer 24.

藉此,可通過強化層21、抗氧化層22、散熱層24以及絕緣層3的特性而達到所需要的效果。另外,以第三實施例而言,強化層21可具有一介於0.5μm至5μm之間的預定厚度21t,抗氧化層22可具有一介於0.5μm至5μm之間的預定厚度22t,散熱層24可具有一介於0.5μm至5μm之間的預定厚度24t,絕緣層3可具有一介於0.5μm至5μm之間的預定厚度3t,然本發明不以此為限。 Thereby, the desired effect can be achieved by the characteristics of the reinforcing layer 21, the oxidation resistant layer 22, the heat dissipation layer 24, and the insulating layer 3. In addition, in the third embodiment, the reinforcing layer 21 may have a predetermined thickness 21t between 0.5 μm and 5 μm, and the oxidation resistant layer 22 may have a predetermined thickness 22t between 0.5 μm and 5 μm, and the heat dissipation layer 24 There may be a predetermined thickness 24t between 0.5 μm and 5 μm, and the insulating layer 3 may have a predetermined thickness 3t between 0.5 μm and 5 μm, although the invention is not limited thereto.

另外,須說明的是,雖然三四實施例是以披覆層2具有強化層21、抗氧化層22以及散熱層24的實施方式作為說明,但是在其他實施方式中,披覆層2也可為選自一強化層21、一抗氧化層22、一石墨烯層23以及一散熱層24中的其中兩者以上依序堆疊所組成的多層結構,本發明不以此為限。即,可以依據需求而選擇應當設置強化層21、抗氧化層22、石墨烯層23以及散熱層24中的那幾個依序堆疊在金屬主體部1上,而使得披覆層2中具有不同特性的多層結構。 In addition, although the third embodiment is described as an embodiment in which the cladding layer 2 has the reinforcing layer 21, the oxidation resistant layer 22, and the heat dissipation layer 24, in other embodiments, the cladding layer 2 may also be used. The present invention is not limited thereto, and is a multilayer structure composed of a plurality of layers selected from a reinforcing layer 21, an anti-oxidation layer 22, a graphene layer 23, and a heat dissipation layer 24, which are sequentially stacked. That is, the plurality of the reinforcing layer 21, the oxidation resistant layer 22, the graphene layer 23, and the heat dissipation layer 24 should be sequentially stacked on the metal body portion 1 so as to have differentities in the cladding layer 2, depending on the demand. Multi-layer structure of characteristics.

承上述,換句話說,在其他實施方式中,披覆層2可包括一強化層21、一石墨烯層23、一散熱層24,強化層21可設置在金屬主體部1的環繞表面11上,石墨烯層23可設置在強化層21的 外表面211上,散熱層24可設置在石墨烯層23的外表面231上,絕緣層3可設置在的外表面241上。 In other words, in other embodiments, the cladding layer 2 may include a strengthening layer 21, a graphene layer 23, and a heat dissipation layer 24, and the reinforcing layer 21 may be disposed on the surrounding surface 11 of the metal body portion 1. The graphene layer 23 may be disposed on the reinforcement layer 21 On the outer surface 211, the heat dissipation layer 24 may be disposed on the outer surface 231 of the graphene layer 23, and the insulating layer 3 may be disposed on the outer surface 241.

[第四實施例] [Fourth embodiment]

首先,請參閱圖6及圖7所示,並一併配合圖4及圖5所示,圖6及7為探針結構U在其他實施方式中的剖面型態。由圖6及圖7與圖4及圖5的比較可知,第四實施例與第三實施例最大的差別在於:第四實施例中可以選擇性地不設置散熱層24。另外,須說明的是,第三實施例所提供的金屬主體部1、強化層21、抗氧化層22、散熱層24以及絕緣層3的特性與前述實施例相仿,在此不再贅述。 First, please refer to FIG. 6 and FIG. 7 , and together with FIG. 4 and FIG. 5 , FIGS. 6 and 7 are cross-sectional views of the probe structure U in other embodiments. 6 and FIG. 7 and FIG. 4 and FIG. 5, the greatest difference between the fourth embodiment and the third embodiment is that the heat dissipation layer 24 can be selectively disposed in the fourth embodiment. In addition, it should be noted that the characteristics of the metal body portion 1, the reinforcing layer 21, the oxidation resistant layer 22, the heat dissipation layer 24, and the insulating layer 3 provided in the third embodiment are similar to those of the foregoing embodiment, and are not described herein again.

承上述,請復參閱圖6所示,披覆層2可具有一強化層21以及一抗氧化層22,強化層21可設置在金屬主體部1的環繞表面11上,抗氧化層22可設置在強化層21的一外表面211上,絕緣層3可設置在抗氧化層22的一外表面221上。 In the above, as shown in FIG. 6, the cladding layer 2 may have a reinforcing layer 21 and an anti-oxidation layer 22, and the reinforcing layer 21 may be disposed on the surrounding surface 11 of the metal body portion 1, and the oxidation resistant layer 22 may be disposed. On an outer surface 211 of the reinforcing layer 21, an insulating layer 3 may be disposed on an outer surface 221 of the oxidation resistant layer 22.

另外,請復參閱圖7所示,披覆層2具有一抗氧化層22以及一強化層21,抗氧化層22可設置在金屬主體部1的環繞表面11上,強化層21可設置在抗氧化層22的一外表面221上,絕緣層3可設置在強化層21的一外表面211上。 In addition, as shown in FIG. 7, the cladding layer 2 has an anti-oxidation layer 22 and a strengthening layer 21, and the oxidation resistant layer 22 may be disposed on the surrounding surface 11 of the metal body portion 1, and the reinforcing layer 21 may be disposed in the anti-corrosion layer 21. On an outer surface 221 of the oxide layer 22, an insulating layer 3 may be disposed on an outer surface 211 of the reinforcing layer 21.

值得注意的是,雖然第四實施例是以披覆層2具有強化層21以及一抗氧化層22的實施方式作為說明,但是在其他實施方式中,披覆層2也可為選自一強化層21、一抗氧化層22、一石墨烯層23以及一散熱層24中的其中兩者以上依序堆疊所組成的多層結構,本發明不以此為限。即,可依需求而選擇性的在披覆層2中設置不同特性的多層結構。 It should be noted that although the fourth embodiment is described as an embodiment in which the cladding layer 2 has the reinforcing layer 21 and an anti-oxidation layer 22, in other embodiments, the cladding layer 2 may also be selected from a reinforcement. The multilayer structure of the layer 21, an anti-oxidation layer 22, a graphene layer 23, and a heat dissipation layer 24 are sequentially stacked, and the invention is not limited thereto. That is, a multilayer structure having different characteristics can be selectively disposed in the cladding layer 2 as needed.

[第五實施例] [Fifth Embodiment]

首先,請參閱圖8所示,並請復參閱圖2所示,圖8為本發 明第五實施例的探針組件的示意圖。本發明第五實施例提供一種探針組件M,其包括一承載座T以及多個探針結構U。多個探針結構U可依探針卡的量測陣列設計而設置在承載座T上。 First, please refer to Figure 8, and please refer to Figure 2, Figure 8 is the current A schematic diagram of a probe assembly of a fifth embodiment. A fifth embodiment of the present invention provides a probe assembly M including a carrier T and a plurality of probe structures U. A plurality of probe structures U can be disposed on the carrier T according to the measurement array design of the probe card.

進一步來說,請復參閱圖2所示,每一個探針結構U可包括一金屬主體部1、一披覆層2以及一絕緣層3。金屬主體部1可具有一環繞表面11,披覆層2可設置在金屬主體部1的環繞表面11上,絕緣層3可設置在披覆層2上。藉此,由於絕緣層3是位於探針結構U的最外層,因此可避免彼此相鄰的探針結構U之間電性接觸而造成短路現象。 Further, as shown in FIG. 2, each of the probe structures U may include a metal body portion 1, a cladding layer 2, and an insulating layer 3. The metal body portion 1 may have a surrounding surface 11, and the cladding layer 2 may be disposed on the surrounding surface 11 of the metal body portion 1, and the insulating layer 3 may be disposed on the cladding layer 2. Thereby, since the insulating layer 3 is located at the outermost layer of the probe structure U, electrical contact between the probe structures U adjacent to each other can be avoided to cause a short circuit phenomenon.

承上述,須說明的是,第五實施例所提供的金屬主體部1、披覆層2以及絕緣層3的特性與前述實施例相仿,在此不再贅述。換句話說,第五實施例所提供的披覆層2也可以如同前述實施例所述地選擇性地設置強化層21、抗氧化層22、石墨烯層23及/或散熱層24。 In the above, it should be noted that the characteristics of the metal body portion 1, the cladding layer 2, and the insulating layer 3 provided in the fifth embodiment are similar to those of the foregoing embodiment, and will not be described herein. In other words, the cladding layer 2 provided in the fifth embodiment can also selectively provide the reinforcing layer 21, the oxidation resistant layer 22, the graphene layer 23, and/or the heat dissipation layer 24 as described in the foregoing embodiments.

[實施例的有益效果] [Advantageous Effects of Embodiments]

本發明的其中一有益效果可以在於,本發明實施例所提供的探針組件M及其探針結構U,其能利用“披覆層2設置在金屬主體部1的環繞表面11上”以及“絕緣層3可設置在披覆層2上”的技術方案,而能提升探針結構U的可靠性、導電性、散熱性及/或機械強度。換句話說,可利用披覆層2中的多層結構分別克服耐電流、機械特性、散熱與絕緣等問題,以提升探針結構U的機械強度、散熱效果以及探針效能與壽命。此外,也可以利用絕緣層3的設置,而避免彼此探針組件M中相鄰的探針結構U之間電性接觸所造成的短路現象。 One of the advantageous effects of the present invention may be that the probe assembly M and the probe structure U thereof provided by the embodiments of the present invention can utilize the "coating layer 2 disposed on the surrounding surface 11 of the metal body portion 1" and " The insulating layer 3 can be disposed on the cladding layer 2, and the reliability, conductivity, heat dissipation and/or mechanical strength of the probe structure U can be improved. In other words, the multilayer structure in the cladding layer 2 can be used to overcome the problems of current resistance, mechanical properties, heat dissipation and insulation, respectively, to improve the mechanical strength, heat dissipation effect, and probe performance and lifetime of the probe structure U. In addition, the arrangement of the insulating layer 3 can also be utilized to avoid short circuit caused by electrical contact between adjacent probe structures U in the probe assembly M.

以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的專利範圍,所以凡是運用本發明說明書及附圖內容所做的等效技術變化,均包含於本發明的保護範圍內。 The above disclosure is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, equivalent technical changes made by using the present specification and the contents of the drawings are included in the scope of protection of the present invention. Inside.

Claims (11)

一種探針結構,其包括:一金屬主體部,所述金屬主體部具有一環繞表面;一披覆層,所述披覆層設置在所述金屬主體部的所述環繞表面上;以及一絕緣層,所述絕緣層設置在所述披覆層上;其中,所述披覆層包括一楊氏模量為100GPa以上的強化層、一氧化還原電位大於或等於-1.66V的抗氧化層、一熱導率大於200W/mK的散熱層或一石墨烯層。 A probe structure comprising: a metal body portion having a surrounding surface; a coating layer disposed on the surrounding surface of the metal body portion; and an insulation a layer, the insulating layer is disposed on the coating layer; wherein the coating layer comprises a strengthening layer having a Young's modulus of 100 GPa or more, and an oxidation resistant layer having a redox potential greater than or equal to -1.66 V, A heat dissipation layer or a graphene layer having a thermal conductivity greater than 200 W/mK. 如請求項1所述的探針結構,其中,所述絕緣層的電阻率大於或等於108Ωm。 The probe structure of claim 1, wherein the insulating layer has a resistivity greater than or equal to 10 8 Ωm. 如請求項1或2所述的探針結構,其中,所述金屬主體部具有導電性,且所述金屬主體部的電阻率小於5 x 102Ωm。 The probe structure according to claim 1 or 2, wherein the metal body portion has electrical conductivity, and the metal body portion has a specific resistance of less than 5 x 10 2 Ωm. 如請求項1所述的探針結構,其中,所述披覆層為選自所述強化層、所述抗氧化層、所述散熱層以及所述石墨烯層之中的其中兩者以上所組成的多層結構。 The probe structure according to claim 1, wherein the coating layer is selected from the group consisting of the reinforcing layer, the oxidation resistant layer, the heat dissipation layer, and the graphene layer. The multilayer structure is composed. 如請求項1所述的探針結構,其中,所述披覆層包括所述強化層、所述抗氧化層以及所述散熱層,所述強化層設置在所述金屬主體部的所述環繞表面上,所述抗氧化層設置在所述強化層的一外表面上,所述散熱層設置在所述抗氧化層的一外表面上,所述絕緣層設置在所述散熱層的一外表面上。 The probe structure according to claim 1, wherein the coating layer includes the reinforcing layer, the oxidation resistant layer, and the heat dissipation layer, the reinforcing layer being disposed on the surrounding of the metal body portion On the surface, the anti-oxidation layer is disposed on an outer surface of the strengthening layer, the heat dissipation layer is disposed on an outer surface of the oxidation resistant layer, and the insulating layer is disposed outside the heat dissipation layer On the surface. 如請求項5所述的探針結構,其中,所述披覆層還進一步包括所述石墨烯層,所述石墨烯層設置在所述抗氧化層與所述散熱層之間。 The probe structure of claim 5, wherein the coating layer further comprises the graphene layer, the graphene layer being disposed between the oxidation resistant layer and the heat dissipation layer. 如請求項1所述的探針結構,其中,所述披覆層包括所述強化層以及所述抗氧化層,所述強化層設置在所述金屬主體部的所述環繞表面上,所述抗氧化層設置在所述強化層的一外表面 上,所述絕緣層設置在所述抗氧化層的一外表面上。 The probe structure according to claim 1, wherein the coating layer includes the reinforcing layer and the oxidation resistant layer, and the reinforcing layer is disposed on the surrounding surface of the metal body portion, An oxidation resistant layer is disposed on an outer surface of the reinforcing layer The insulating layer is disposed on an outer surface of the oxidation resistant layer. 一種探針組件,其包括:一承載座;以及多個探針結構,多個所述探針結構設置在所述承載座上,每一個所述探針結構包括一金屬主體部、一披覆層以及一絕緣層;其中,所述金屬主體部具有一環繞表面,所述披覆層設置在所述金屬主體部的所述環繞表面上,所述絕緣層設置在所述披覆層上;其中,所述披覆層包括一楊氏模量為100GPa以上的強化層、一氧化還原電位大於或等於-1.66V的抗氧化層、一熱導率大於200W/mK的散熱層或一石墨烯層。 A probe assembly includes: a carrier; and a plurality of probe structures, wherein the plurality of probe structures are disposed on the carrier, each of the probe structures including a metal body portion and a covering a layer and an insulating layer; wherein the metal body portion has a surrounding surface, the covering layer is disposed on the surrounding surface of the metal body portion, and the insulating layer is disposed on the covering layer; Wherein, the coating layer comprises a strengthening layer having a Young's modulus of 100 GPa or more, an oxidation resistant layer having a redox potential greater than or equal to -1.66 V, a heat dissipating layer having a thermal conductivity greater than 200 W/mK or a graphene. Floor. 如請求項8所述的探針組件,其中,所述絕緣層的電阻率大於或等於108Ωm。 The probe assembly of claim 8, wherein the insulating layer has a resistivity greater than or equal to 10 8 Ωm. 如請求項8或9所述的探針組件,其中,所述金屬主體部具有導電性,且所述金屬主體部的電阻率小於5 x 102Ωm。 The probe assembly of claim 8 or 9, wherein the metal body portion has electrical conductivity, and the metal body portion has a resistivity of less than 5 x 10 2 Ωm. 如請求項8所述的探針組件,其中,所述披覆層為選自所述強化層、所述抗氧化層、所述散熱層以及所述石墨烯層之中的其中兩者以上所組成的多層結構。 The probe assembly according to claim 8, wherein the coating layer is selected from the group consisting of the reinforcing layer, the oxidation resistant layer, the heat dissipation layer, and the graphene layer. The multilayer structure is composed.
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WO2008117343A1 (en) * 2007-02-23 2008-10-02 Nidec-Read Corporation Substrate inspection contact
CN102508002A (en) * 2011-10-31 2012-06-20 北京遥测技术研究所 Plasma density measuring equipment of high temperature resistant embedded double-probe type
TWM478155U (en) * 2013-12-20 2014-05-11 Mpi Corp Probe head
CN106483448A (en) * 2015-09-02 2017-03-08 甲骨文国际公司 Coaxial integrated circuitry test jack

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WO2008117343A1 (en) * 2007-02-23 2008-10-02 Nidec-Read Corporation Substrate inspection contact
CN102508002A (en) * 2011-10-31 2012-06-20 北京遥测技术研究所 Plasma density measuring equipment of high temperature resistant embedded double-probe type
TWM478155U (en) * 2013-12-20 2014-05-11 Mpi Corp Probe head
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