TWI636590B - 發光二極體封裝 - Google Patents

發光二極體封裝 Download PDF

Info

Publication number
TWI636590B
TWI636590B TW106132202A TW106132202A TWI636590B TW I636590 B TWI636590 B TW I636590B TW 106132202 A TW106132202 A TW 106132202A TW 106132202 A TW106132202 A TW 106132202A TW I636590 B TWI636590 B TW I636590B
Authority
TW
Taiwan
Prior art keywords
light
emitting diode
electrodes
light emitting
unit
Prior art date
Application number
TW106132202A
Other languages
English (en)
Other versions
TW201916406A (zh
Inventor
張仁鴻
蕭松益
Original Assignee
宏齊科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 宏齊科技股份有限公司 filed Critical 宏齊科技股份有限公司
Priority to TW106132202A priority Critical patent/TWI636590B/zh
Priority to CN201711266457.7A priority patent/CN109524528A/zh
Priority to US15/855,727 priority patent/US10355185B2/en
Application granted granted Critical
Publication of TWI636590B publication Critical patent/TWI636590B/zh
Publication of TW201916406A publication Critical patent/TW201916406A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/18—Distinguishing marks on switches, e.g. for indicating switch location in the dark; Adaptation of switches to receive distinguishing marks
    • H01H9/181—Distinguishing marks on switches, e.g. for indicating switch location in the dark; Adaptation of switches to receive distinguishing marks using a programmable display, e.g. LED or LCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/02815—Means for illuminating the original, not specific to a particular type of pick-up head
    • H04N1/0288—Means for illuminating the original, not specific to a particular type of pick-up head using a two-dimensional light source, e.g. two-dimensional LED array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

一種LED封裝包含：N個分別接收N個電源信號的第一端，N=4、6；六個第二端；N個LED單元，每個LED單元包括第一至第三LED，每個LED具有第一及第二電極，第(2j-1)及第2j個LED單元中的該等第一LED的該等第一電極電連接第(2j-1)個第一端，該等第(2j-1)及第2j個LED單元中的該等第二及第三LED的該等第一電極電連接第2j個第一端，j≦N/2，且j為正整數；當N=4時，第一與第三個LED單元中每一者的該等第一至第三LED的該等第二電極分別電連接第一至第三個第二端，第二與第四個LED單元中每一者的該等第一至第三LED的該等第二電極分別電連接第四至第六個第二端。

Description

發光二極體封裝
本發明是有關於一種封裝，特別是指一種發光二極體封裝。
參閱圖1，習知發光二極體模組1適用於接收一電源信號Vcc，且包含複數個發光二極體(Light Emitting Diode，LED)封裝11及複數個限流電阻110。每個發光二極體封裝11包括一與所對應之限流電阻110串聯連接的第一發光二極體111、一第二發光二極體112及一第三發光二極體113。於每個發光二極體封裝11中，該等第一至第三發光二極體111、112、113的陽極彼此電連接並接收該電源信號Vcc，且據以分別發出紅光、綠光及藍光。
由於每個第一發光二極體111的製作材料不同於每個第二及第三發光二極體112、113的製作材料(每個第二及第三發光二極體112、113的製作材料相同)，使得每個第一發光二極體111發光時的順向電壓(約2V)不同於每個第二及第三發光二極體112、113發光時的順向電壓(約3V)。因此，在上述結構中，為避免該等第一至第三發光二極體111、112、113發光時，每個第一發光二極體111因被過電壓驅動而造成漏電或燒毀的問題出現，對於習知發光二極體模組1而言，用來減少所對應的每個第一發光二極體111之跨壓的每個限流電阻110是必要構件。如此，將造成習知發光二極體模組1具有很高的能量損耗(此會導致習知發光二極體模組1累積不必要的熱能，長期下來會造成每個發光二極體封裝11中每個第一至第三發光二極體111、112、113的自身材料變質，進而降低每個發光二極體封裝11的發光效率，甚至衍生每個發光二極體封裝11有產品失效等可靠度問題)，並導致習知發光二極體模組1具有較複雜的電路結構及較高的製造成本。
因此，本發明的目的，即在提供一種能夠克服先前技術缺點的發光二極體封裝。
於是，本發明發光二極體封裝包含N個第一端、六個第二端、N個發光二極體單元及一基板，N=4、6。
該N個第一端適用於分別接收N個電源信號。
每個發光二極體單元包括一第一發光二極體、一第二發光二極體，及一第三發光二極體，且該等第一至第三發光二極體中的每一者具有一第一電極及一第二電極，第(2j-1)個發光二極體單元及第2j個發光二極體單元中的該等第一發光二極體的該等第一電極電連接第(2j-1)個第一端，該等第(2j-1)及第2j個發光二極體單元中的該等第二及第三發光二極體的該等第一電極電連接第2j個第一端，j≦N/2，且j為正整數。
該N個第一端、該六個第二端及該N個發光二極體單元被設置於該基板上。
當N=4時，第一個發光二極體單元與第三個發光二極體單元中每一者的該等第一至第三發光二極體的該等第二電極分別電連接第一個第二端、第二個第二端及第三個第二端，第二個發光二極體單元與第四個發光二極體單元中每一者的該等第一至第三發光二極體的該等第二電極分別電連接第四個第二端、第五個第二端及第六個第二端。
本發明之功效在於：藉由將每個發光二極體單元中的該第一發光二極體的該第一電極電連接一個第一端，該等第二及第三發光二極體的該等第一電極電連接另一個第一端，可避免每個第一發光二極體被過電壓驅動而造成漏電或燒毀的問題出現，進而不須額外配置限流電阻。
參閱圖2，本發明發光二極體(Light Emitting Diode，LED)封裝20之一實施例包含四(即，N=4)個第一端Ni1、Ni2、Ni3、Ni4、六個第二端No1、No2、No3、No4、No5、No6、四(即，N=4)個發光二極體單元2及一基板(圖未示)。在本實施例中，該四個第一端Ni1~Ni4、該六個第二端No1~No6及該四個發光二極體單元2被設置於該基板上。該發光二極體封裝20為一多像素封裝體，每個第二端No1~No6是分別作為該多像素封裝體的多個外接電極(即，該多像素封裝體的接腳或焊接墊)。複數個該發光二極體封裝20用來組合成一發光二極體模組(圖未示)。
該四個第一端Ni1~Ni4適用於分別接收四個電源信號VCC1、VCC2、VCC3、VCC4。在本實施例中，每個電源信號VCC1、VCC3的電壓值小於每個電源信號VCC2、VCC4的電壓值。每個電源信號VCC1~VCC4是由一定電壓源或一定電流源所提供。
該等發光二極體單元2中的每一者包括一第一發光二極體21、一第二發光二極體22，及一第三發光二極體23。該等第一至第三發光二極體21、22、23中的每一者具有一第一電極及一第二電極。
第(2j-1)個發光二極體單元2及第2j個發光二極體單元2中的該等第一發光二極體21的該等第一電極電連接第(2j-1)個第一端Ni(2j-1)，該等第(2j-1)及第2j個發光二極體單元2中的該等第二及第三發光二極體22、23的該等第一電極電連接第2j個第一端Ni(2j)，j≦N/2(N/2=4/2=2)，且j為正整數(等同於0＜j≦N/2，且j為整數)。也就是說，當N=4時，j=1、2。舉例來說，在本實施例中，當j=1時，第一及第二個發光二極體單元2中的該等第一發光二極體21的該等第一電極電連接第一個第一端Ni1，該等第一及第二個發光二極體單元2中的該等第二及第三發光二極體22、23的該等第一電極電連接第二個第一端Ni2。此外，該等第一與第三個發光二極體單元2中每一者的該等第一至第三發光二極體21、22、23的該等第二電極分別電連接第一個第二端No1、第二個第二端No2及第三個第二端No3。該等第二與第四個發光二極體單元2中每一者的該等第一至第三發光二極體21、22、23的該等第二電極分別電連接第四個第二端No4、第五個第二端No5及第六個第二端No6。
需說明的是，在本實施例中，於每個發光二極體單元2中，該等第一至第三發光二極體21、22、23中每一者的該第一電極及該第二電極分別為一陽極及一陰極。於每個發光二極體單元2中，該等第二及第三發光二極體22、23中每一者的製作材料為氮化銦鎵(InGaN)，該第一發光二極體21的製作材料為磷化鋁銦鎵(AlGaInP)。此外，於每個發光二極體單元2中，該第一發光二極體21發出紅光，該第二發光二極體22發出綠光，該第三發光二極體23發出藍光。
另外，本發明發光二極體封裝20中，N的數量也可為六，但不限於此。當N=6時，j≦3(N/2=6/2)，也就是說，j=1、2、3，且該等第一與第三個發光二極體單元2及第五個發光二極體單元(圖未示)中每一者的該等第一至第三發光二極體21、22、23的該等第二電極分別電連接該等第一至第三個第二端No1~No3，該等第二與第四個發光二極體單元2及第六個發光二極體單元(圖未示)中每一者的該等第一至第三發光二極體21、22、23的該等第二電極分別電連接該等第四至第六個第二端No4~No6。
綜上所述，本發明發光二極體封裝20中，由於每個發光二極體單元2中的該第一發光二極體21所接收的電源信號VCC1(VCC3)不同於該等第二及第三發光二極體22、23所接收的電源信號VCC2(VCC4)，也就是說，該第一發光二極體21是被單獨控制，進而該第一發光二極體21不會如圖1之習知第一發光二極體111是與第二及第三發光二極體112、113一起被控制(即，若沒設置限流電阻110的話，會導致該第一發光二極體111有被過電壓驅動而漏電或燒毀的問題出現)，所以藉由本發明發光二極體封裝20所組合而成的該發光二極體模組可省略於圖1之習知發光二極體模組1中所必須的多個限流電阻110。因此，該發光二極體模組相較於習知發光二極體模組1具有較低的能量損耗(如此，可避免該發光二極體模組累積不必要的熱能，進而可增加本發明發光二極體封裝20的可靠度)、較簡單的電路結構及較低的製造成本。
惟以上所述者，僅為本發明之實施例而已，當不能以此限定本發明實施之範圍，凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。
2‧‧‧發光二極體單元
20‧‧‧發光二極體封裝
21‧‧‧第一發光二極體
22‧‧‧第二發光二極體
23‧‧‧第三發光二極體
Ni1~ Ni4‧‧‧第一端
No1~ No6‧‧‧第二端
VCC1~ VCC4‧‧‧電源信號
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中： 圖1是一電路圖，說明一習知發光二極體模組；及 圖2是一電路圖，說明本發明發光二極體封裝之一實施例。

Claims (6)

  1. 一種發光二極體封裝，包含： N個第一端，該N個第一端適用於分別接收N個電源信號，N=4、6； 六個第二端； N個發光二極體單元，每個發光二極體單元包括一第一發光二極體、一第二發光二極體，及一第三發光二極體，且該等第一至第三發光二極體中的每一者具有一第一電極及一第二電極，第(2j-1)個發光二極體單元及第2j個發光二極體單元中的該等第一發光二極體的該等第一電極電連接第(2j-1)個第一端，該等第(2j-1)及第2j個發光二極體單元中的該等第二及第三發光二極體的該等第一電極電連接第2j個第一端，j≦N/2，且j為正整數；及 一基板，該N個第一端、該六個第二端及該N個發光二極體單元被設置於該基板上； 其中，當N=4時，第一個發光二極體單元與第三個發光二極體單元中每一者的該等第一至第三發光二極體的該等第二電極分別電連接第一個第二端、第二個第二端及第三個第二端，第二個發光二極體單元與第四個發光二極體單元中每一者的該等第一至第三發光二極體的該等第二電極分別電連接第四個第二端、第五個第二端及第六個第二端。
  2. 如請求項1所述的發光二極體封裝，其中，當N=6時，該等第一與第三個發光二極體單元及第五個發光二極體單元中每一者的該等第一至第三發光二極體的該等第二電極分別電連接該等第一至第三個第二端，該等第二與第四個發光二極體單元及第六個發光二極體單元中每一者的該等第一至第三發光二極體的該等第二電極分別電連接該等第四至第六個第二端。
  3. 如請求項1所述的發光二極體封裝，其中，於每個發光二極體單元中，該等第一至第三發光二極體中每一者的該第一電極及該第二電極分別為一陽極及一陰極。
  4. 如請求項1所述的發光二極體封裝，其中，於每個發光二極體單元中，該等第二及第三發光二極體的製作材料相同，該第一發光二極體的製作材料不同於該第二發光二極體。
  5. 如請求項4所述的發光二極體封裝，其中，於每個發光二極體單元中，該等第二及第三發光二極體中每一者的製作材料為氮化銦鎵，該第一發光二極體的製作材料為磷化鋁銦鎵。
  6. 如請求項1所述的發光二極體封裝，其中，於每個發光二極體單元中，該第一發光二極體發出紅光，該第二發光二極體發出綠光，該第三發光二極體發出藍光。
TW106132202A 2017-09-20 2017-09-20 發光二極體封裝 TWI636590B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW106132202A TWI636590B (zh) 2017-09-20 2017-09-20 發光二極體封裝
CN201711266457.7A CN109524528A (zh) 2017-09-20 2017-12-05 发光二极管封装
US15/855,727 US10355185B2 (en) 2017-09-20 2017-12-27 Light emitting diode array package having a plurality of power source signals without limiting resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW106132202A TWI636590B (zh) 2017-09-20 2017-09-20 發光二極體封裝

Publications (2)

Publication Number Publication Date
TWI636590B true TWI636590B (zh) 2018-09-21
TW201916406A TW201916406A (zh) 2019-04-16

Family

ID=64453102

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106132202A TWI636590B (zh) 2017-09-20 2017-09-20 發光二極體封裝

Country Status (3)

Country Link
US (1) US10355185B2 (zh)
CN (1) CN109524528A (zh)
TW (1) TWI636590B (zh)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201011944A (en) * 2008-09-12 2010-03-16 Ultrachip Inc Light emitting diode lamp with single current source
TW201442558A (zh) * 2013-03-06 2014-11-01 Gen Electric 用於並聯連接之ｌｅｄ照明器具串間平均分配電流之電流分流電路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04303884A (ja) * 1991-03-30 1992-10-27 Takiron Co Ltd Ｌｅｄ点灯回路
JP2006119274A (ja) * 2004-10-20 2006-05-11 Nec Lighting Ltd Ｌｅｄ表示装置および表示制御方法
WO2010022538A1 (zh) * 2008-08-26 2010-03-04 Pan Dingguo 发光二极管多芯片贴片及装有该贴片的灯条
CN201262809Y (zh) * 2008-10-10 2009-06-24 上海金陵时威科技发展股份有限公司 一种led电子显示屏节能装置
CN101808443A (zh) * 2009-02-17 2010-08-18 能极电源(深圳)有限公司 Led显示屏供电方法及系统
JPWO2011040512A1 (ja) * 2009-10-02 2013-02-28 レシップホールディングス株式会社 蛍光灯駆動装置及び蛍光灯駆動装置の保護回路
CN202126823U (zh) * 2011-07-06 2012-01-25 黄水桥 一种新型led节能屏
TWI581238B (zh) * 2015-07-07 2017-05-01 Light emitting diode display system
CN106875857A (zh) * 2017-04-01 2017-06-20 深圳诚通光电科技有限公司 双电源供电的led显示模组及led显示屏

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201011944A (en) * 2008-09-12 2010-03-16 Ultrachip Inc Light emitting diode lamp with single current source
TW201442558A (zh) * 2013-03-06 2014-11-01 Gen Electric 用於並聯連接之ｌｅｄ照明器具串間平均分配電流之電流分流電路

Also Published As

Publication number Publication date
US10355185B2 (en) 2019-07-16
US20190088841A1 (en) 2019-03-21
CN109524528A (zh) 2019-03-26
TW201916406A (zh) 2019-04-16

Similar Documents

Publication Publication Date Title
TWI662638B (zh) 半導體晶片修補方法以及半導體晶片修補裝置
US8710515B2 (en) Light-emitting device
JP5192672B2 (ja) Ｌｅｄユニット
CN100547283C (zh) 发光二极管组件和发光设备
US8269233B2 (en) Vertical ACLED structure
WO2021042853A1 (zh) 一种像素驱动电路和显示面板
CN103000652B (zh) 固态光源模块及固态光源阵列
TWI398971B (zh) 發光二極體封裝結構
TWI632666B (zh) 半導體晶片修補方法以及半導體晶片修補裝置
TWI636590B (zh) 發光二極體封裝
US8957590B1 (en) Structure of color mixture synchronization circuit of LED light string
JP2020031526A (ja) 半導体モジュール
US9484493B2 (en) Rectifying unit, a light emitting diode device, and the combination thereof
EP3099141A1 (en) A lighting device and corresponding method
JP2010182803A (ja) 発光装置
US20170025376A1 (en) Wafer circuit
US8247980B2 (en) LED driving circuit and light emitting diode array device
US20110084617A1 (en) High reliability and long lifetime AC LED device
CN203871371U (zh) 晶片电路
US10299320B2 (en) Light emitting module thereof
CN201868074U (zh) 有机发光二极管显示器的反馈安全结构
KR101001242B1 (ko) 교류용 발광 다이오드
CN221125944U (zh) 一种集成电阻和二极管的cob光源
JP5408428B2 (ja) チップ型発光ダイオード装置
CN202617476U (zh) 二接脚的具有开路替代功能与静电浪涌保护功能的led