TWI631731B - 具有布拉格反射層位於窗戶層之間之發光元件 - Google Patents

具有布拉格反射層位於窗戶層之間之發光元件 Download PDF

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TWI631731B
TWI631731B TW106118574A TW106118574A TWI631731B TW I631731 B TWI631731 B TW I631731B TW 106118574 A TW106118574 A TW 106118574A TW 106118574 A TW106118574 A TW 106118574A TW I631731 B TWI631731 B TW I631731B
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emitting element
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Po-Shun Chiu
邱柏順
De-Shan Kuo
郭得山
Chun-Hsiang Tu
塗均祥
Chun-Teng Ko
柯峻騰
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Epistar Corporation
晶元光電股份有限公司
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    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
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    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
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Abstract

一發光元件，包含：一透明基板；一發光疊層，位於透明基板之上；一第一窗戶層，位於透明基板之下；一布拉格反射層，位於第一窗戶層之下；以及一第二窗戶層，位於布拉格反射層之下；其中，第一窗戶層包含一第一絕緣材料；第二窗戶層包含一第二絕緣材料；布拉格反射層具有複數個次層；複數個次層之一的材料與第二絕緣材料相同；以及第二窗戶層之厚度係介於300奈米與1000奈米。

Description

具有布拉格反射層位於窗戶層之間之發光元件
本發明關於一種發光元件，特別是關於一種具有布拉格反射層(Distributed Bragg Reflector；DBR)位於窗戶層之間之發光元件。
發光二極體（Light-emitting Diode；LED）係一種固態半導體元件，其至少包含一p-n接面（p-n junction）形成於p型與n型半導體層之間。當於LED施加一定程度之偏壓時，出自p型半導體層中之電洞與出自n型半導體層中之電子會結合而釋放出光。此光產生之區域一般又稱為發光區（light-emitting region）或主動層。
LED的主要特徵在於尺寸小、可靠度高、發光效率高、壽命長、反應快速和色度良好，目前已經廣泛地使用在光學顯示裝置、交通號誌、資料儲存裝置、通訊裝置、照明裝置與醫療器材上。隨著全彩LED的問世，LED已逐漸取代傳統的照明設備，如螢光燈和白熱燈泡。
如圖2所示，一習知發光裝置2包含一基板20；一發光結構22位於基板20之上；一第一電極24與一第二電極26位於發光結構22之上；以及一布拉格反射層(Distributed Bragg Reflector；DBR)28位於基板20之下，其中布拉格反射層28具有次層282與284交互堆疊。產生自發光結構22之光會被布拉格反射層28反射。然而有些光會被侷限在布拉格反射層28之次層282與284之中，在數次內部全反射之後轉變為熱能。此外，基板20的側面太小而導致被布拉格反射層28反射之光無法被摘出，因此降低習知發光元件2之光摘出效率。
一發光元件，包含：一透明基板；一發光疊層，位於透明基板之上；一第一窗戶層，位於透明基板之下；一布拉格反射層，位於第一窗戶層之下；以及一第二窗戶層，位於布拉格反射層之下；其中，第一窗戶層包含一第一絕緣材料；第二窗戶層包含一第二絕緣材料；布拉格反射層具有複數個次層；複數個次層之一的材料與第二絕緣材料相同；以及第二窗戶層之厚度係介於300奈米與1000奈米。
本發明之實施例會被詳細地描述，並且繪製於圖式中，相同或類似的部分會以相同的號碼在各圖式以及說明出現。
圖1繪示一發光元件1具有一基板10；一發光疊層12形成於基板10之上；以及一光摘出結構18形成於基板10之下。發光疊層12具有一第一半導體層122；一第二半導體層126；以及一主動層124位於第一半導體層122與第二半導體層126之間。此外，一第一電極14形成於第一半導體層122之上，一第二電極16形成於第二半導體層126之上。
光摘出結構18具有一第一窗戶層182位於基板10之下；一第二窗戶層186位於第一窗戶層182之下，以及一布拉格反射層184位於第一窗戶層182與第二窗戶層186之間，其中布拉格反射層184具有複數個次層。如圖1所示，第一窗戶層182與第二窗戶層186中至少其一可提升光摘出效率，以及以剖面觀之，具有與基板10大致相等之寬度。然而另一實施例中，自剖面觀之，第一窗戶層182亦可具有大於或小於第二窗戶層186之寬度，用以調整發光元件1之光場以符合產品應用。布拉格反射層184可反射產生自發光疊層12之光。基本上布拉格反射層184具有數個具有不同折射率的材料對，其中折射率的差異至少為0.5，較佳至少為1。 【表1】
第一窗戶層182、第二窗戶層186或兩者皆不會覆蓋或實質接觸發光疊層12之側面，所以發光疊層12產生之熱可較易散逸。每一第一窗戶層182與第二窗戶層186之厚度約介於300奈米與1000奈米，較佳約介450奈米與550奈米以提升發光元件1之光摘出效率。表1顯示例1與例2的實驗數據，例1表示發光元件之第二窗戶層186之厚度係70奈米，例2表示發光元件之第二窗戶層186之厚度係500奈米。如表1所示，例2顯示具有較例1為大的功率，這表示例2的發光元件較例1的發光元件具有較高的光摘出效率。布拉格反射層184的每一次層之厚度約介於30奈米與80奈米，較佳約介於40奈米與60奈米。布拉格反射層184次層之對數係介於5與50，較佳介於5與15。布拉格反射層184之總厚度約介於300奈米與8000奈米，較佳約介於500奈米與1500奈米。第一窗戶層182或第二窗戶層186之厚度相對於布拉格反射層184之總厚度之比值約介於0.03與3.33，較佳約介於0.3與1.1，以提升發光元件1之光摘出效率。第一窗戶層182、第二窗戶層186或兩者之厚度皆足夠厚，所以被侷限於布拉格反射層184或發光疊層12之光可於第一窗戶層182、第二窗戶層186或兩者之側面被摘出。窗戶層之材料相對於發光疊層12所發之光為透明，可為導電材料或絕緣材料。導電材料可為氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋅(ZnO)、氧化鎂(MgO)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN)、磷化鎵(GaP)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)或氧化銦鋅(IZO)。絕緣材料可為Su8、苯并環丁烯（BCB）、過氟環丁烷（PFCB）、環氧樹脂（Epoxy）、丙烯酸樹脂（Acrylic Resin）、環烯烴聚合物（COC）、聚甲基丙烯酸甲酯（PMMA）、聚對苯二甲酸乙二酯（PET）、聚亞醯胺(PI)、聚碳酸酯（PC）、聚醚醯亞胺（Polyetherimide）、氟碳聚合物（Fluorocarbon Polymer）、玻璃(Glass)、氧化鉭(Ta2O5)、氧化鋁(Al2O3)、二氧化矽(SiO2)、氧化鈦(TiO2)、氮化矽(SiNx)、旋塗玻璃(SOG)或四乙氧基矽烷(TEOS)。每一次層之材料可與窗戶層之材料相同。
另一實施例中，第一窗戶層182、第二窗戶層186或兩者可作為布拉格反射結構之一部分。布拉格反射結構中的每一次層之厚度都遵循關係式d=m(λ/4n)，其中d表示次層之厚度，λ表示被布拉格反射層結構反射之光之波長，n表示次層之折射率，m表示任一正整數。例如當被布拉格反射層結構反射之光之波長約為460奈米，第一次層182與第二次層186之折射率約為1.5時，m為不小於3，較佳為介於3與7，以提升光摘出效率。
基板10可用以成長及/或支持位於其上之發光疊層12，其材料相對於發光疊層12產生之光為透明，可包含絕緣材料、導電材料或兩者。絕緣材料可為藍寶石（Sapphire）、鑽石(Diamond)、玻璃(Glass)、石英(Quartz)、壓克力(Acryl)或氮化鋁(AlN)。導電材料可為碳化矽(SiC)、磷化碘(IP)、砷化鎵(GaAs)、鍺(Ge)、磷化鎵(GaP)、磷砷化鎵(GaAsP)、硒化鋅(ZnSe)、磷化銦(InP)、氧化鋅(ZnO)、鎵酸鋰(LiGaO2)或鋁酸鋰(LiAlO2)。
發光疊層12可直接成長於基板10之上，或藉由黏結層(未顯示)貼附至基板10之上。發光疊層12之材料可為半導體材料，包含一種以上之元素，此元素可選自鎵(Ga)、鋁(Al)、銦(In)、磷(P)、氮(N)、鋅(Zn)、鎘(Cd)與硒(Se)所構成之群組。第一半導體層122與第二半導體層126的電性相異，用以產生電子或電洞。主動層124可產生一種或多種色光，可為可見光或不可見光，其結構可為單異質結構、雙異質結構、雙側雙異質結構或多層量子井。
第一電極14、第二電極16或兩者用以接受外部電壓，可由透明導電材料、金屬材料或兩者所構成。透明導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鋅(ZnO)、氧化銦鋅(IZO)、類鑽碳薄膜(DLC)、氧化鎵鋅(GZO)或上述材料之組合。金屬材料包含但不限於銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鈷(Co)、鎘(Cd)、錳(Mn)、銻(Sb) 鉍(Bi)、鎵(Ga)、鎢(W)、鈹(Be)或上述材料之合金等。
圖3係繪示出本申請案另一實施例之一燈泡分解示意圖，一燈泡3具有一燈罩31；一透鏡32，置於燈罩31之中；一照明模組34，位於透鏡32之下；一燈座35，具有一散熱槽36，用以承載照明模組34；一連結部37；以及一電連結器38，其中連結部37連結燈座35與電連接器38。照明模組34具有一載體33；以及複數個前述任一實施例之發光元件30，位於載體33之上。
惟上述實施例僅為例示性說明本申請案之原理及其功效，而非用於限制本申請案。任何本申請案所屬技術領域中具有通常知識者均可在不違背本申請案之技術原理及精神的情況下，對上述實施例進行修改及變化。因此本申請案之權利保護範圍如後述之申請專利範圍所列。
1、2、30‧‧‧發光元件
10、20‧‧‧基板
12、22‧‧‧發光疊層
122‧‧‧第一半導體層
124‧‧‧主動層
126‧‧‧第二半導體層
14、24‧‧‧第一電極
16、26‧‧‧第二電極
18‧‧‧光摘出結構
182‧‧‧第一窗戶層
184、28‧‧‧布拉格反射層
186‧‧‧第二窗戶層
282、284‧‧‧次層
3‧‧‧燈泡
31‧‧‧燈罩
32‧‧‧透鏡
33‧‧‧載體
34‧‧‧照明模組
35‧‧‧燈座
36‧‧‧散熱槽
37‧‧‧連結部
38‧‧‧電連結器
［圖1］繪示本申請案一實施例之發光元件之剖面圖。 ［圖2］繪示習知之發光元件之剖面圖。 ［圖3］繪示本申請案另一實施例之燈泡分解示意圖。

Claims (10)

  1. 一發光元件，包含：一透明基板；一發光疊層，位於該透明基板之上；一第一窗戶層，位於該透明基板之下；一布拉格反射層，位於該透明基板之下；以及一第二窗戶層，位於該布拉格反射層之下；其中，該第一窗戶層包含一第一絕緣材料；該第二窗戶層包含一第二絕緣材料；該布拉格反射層具有複數個次層；該些次層之一的材料與該第二絕緣材料相同；以及該第二窗戶層之厚度係介於300奈米與1000奈米且為一單層結構。
  2. 如請求項第1項所述的發光元件，其中該第一窗戶層之厚度係介於300奈米與1000奈米。
  3. 如請求項第1項所述的發光元件，其中該複數個次層之一的材料與該第一絕緣材料相同。
  4. 如請求項第1項所述的發光元件，其中該第二窗戶層相對於該布拉格反射層之總厚度比值係介於0.3與1.1。
  5. 如請求項第1項所述的發光元件，其中該第二窗戶層接觸該布拉格反射層。
  6. 如請求項第1項所述的發光元件，其中該第二窗戶層之厚度大於該些次層之個別厚度。
  7. 如請求項第1項所述的發光元件，其中該布拉格反射層包含交互堆疊的複數個第一次層以及複數個第二次層，該第一次層與該第二次層分別為折射率不同的絕緣材料，且該第一次層與該第二次層之折射率之差至少為0.5。
  8. 如請求項第7項所述的發光元件，其中該複數個第一次層或/且該複數個第二次層之個別厚度係介於30奈米與80奈米。
  9. 如請求項第1項所述的發光元件，其中該布拉格反射層之總厚度介於300奈米與8000奈米。
  10. 如請求項第1項所述的發光元件，其中該第一窗戶層為一單層結構。
TW106118574A 2012-07-13 2013-07-05 具有布拉格反射層位於窗戶層之間之發光元件 TWI631731B (zh)

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