CN103545414A - 具有布拉格反射层位于窗户层之间的发光元件 - Google Patents

具有布拉格反射层位于窗户层之间的发光元件 Download PDF

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CN103545414A
CN103545414A CN201310294349.6A CN201310294349A CN103545414A CN 103545414 A CN103545414 A CN 103545414A CN 201310294349 A CN201310294349 A CN 201310294349A CN 103545414 A CN103545414 A CN 103545414A
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light
window layers
emitting component
reflecting layer
substrate
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CN103545414B (zh
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邱柏顺
郭得山
涂均祥
柯竣腾
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Epistar Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/02—Combinations of only two kinds of elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/237—Details of housings or cases, i.e. the parts between the light-generating element and the bases; Arrangement of components within housings or cases
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/77—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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    • F21V3/00—Globes; Bowls; Cover glasses
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
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    • F21V3/00—Globes; Bowls; Cover glasses
    • F21V3/02—Globes; Bowls; Cover glasses characterised by the shape
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2101/00—Point-like light sources
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    • F21—LIGHTING
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    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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Abstract

本发明公开一种具有布拉格反射层位于窗户层之间的发光元件，其包含一基板；一发光叠层，位于基板之上；一第一窗户层，位于基板之下；以及一布拉格反射层，位于第一窗户层之下；其中以剖面观之，第一窗户层的宽度与基板的宽度大致相等。

Description

具有布拉格反射层位于窗户层之间的发光元件
技术领域
本发明涉及一种发光元件，特别是涉及一种具有布拉格反射层(Distributed Bragg Reflector；DBR)位于窗户层之间的发光元件。
背景技术
发光二极管（Light-emitting Diode；LED）是一种固态半导体元件，其至少包含一p-n接面（p-n junction）形成于p型与n型半导体层之间。当于LED施加一定程度的偏压时，出自p型半导体层中的空穴与出自n型半导体层中的电子会结合而释放出光。此光产生的区域一般又称为发光区（light-emitting region）或主动层。
LED的主要特征在于尺寸小、可靠度高、发光效率高、寿命长、反应快速和色度良好，目前已经广泛地使用在光学显示装置、交通号志、数据储存装置、通讯装置、照明装置与医疗器材上。随着全彩LED的问世，LED已逐渐取代传统的照明设备，如荧光灯和白热灯泡。
如图2所示，一现有发光装置2包含一基板20；一发光结构22位于基板20之上；一第一电极24与一第二电极26位于发光结构22之上；以及一布拉格反射层(Distributed Bragg Reflector；DBR)28位于基板20之下，其中布拉格反射层28具有次层282与284交互堆叠。产生自发光结构22之光会被布拉格反射层28反射。然而有些光会被局限在布拉格反射层28的次层282与284之中，在数次内部全反射之后转变为热能。此外，基板20的侧面太小而导致被布拉格反射层28反射之光无法被摘出，因此降低现有发光元件2的光摘出效率。
发明内容
为解决上述问题，本发明提供一发光元件，包含一基板；一发光叠层，位于基板之上；一第一窗户层，位于基板之下；以及一布拉格反射层，位于第一窗户层之下；其中以剖面观之，第一窗户层的宽度与基板的宽度大致相等。
附图说明
图1绘示本申请案一实施例的发光元件的剖视图；
图2绘示现有的发光元件的剖视图；
图3绘示本申请案另一实施例的灯泡分解示意图。
符号说明
1、2、30  发光元件
10、20  基板
12、22  发光叠层
122  第一半导体层
124  主动层
126  第二半导体层
14、24  第一电极
16、26  第二电极
18  光摘出结构
182  第一窗户层
184、28  布拉格反射层
186  第二窗户层
282、284  次层
3   灯泡
31  灯罩
32  透镜
33  载体
34  照明模块
35  灯座
36  散热槽
37  连结部
38  电连结器
具体实施方式
本发明的实施例会被详细地描述，并且绘制于附图中，相同或类似的部分会以相同的号码在各附图以及说明出现。
图1绘示一发光元件1具有一基板10；一发光叠层12形成于基板10之上；以及一光摘出结构18形成于基板10之下。发光叠层12具有一第一半导体层122；一第二半导体层126；以及一主动层124位于第一半导体层122与第二半导体层126之间。此外，一第一电极14形成于第一半导体层122之上，一第二电极16形成于第二半导体层126之上。
光摘出结构18具有一第一窗户层182位于基板10之下；一第二窗户层186位于第一窗户层182之下，以及一布拉格反射层184位于第一窗户层182与第二窗户层186之间，其中布拉格反射层184具有多个次层。如图1所示，第一窗户层182与第二窗户层186中至少其一可提升光摘出效率，以及以剖面观之，具有与基板10大致相等的宽度。然而另一实施例中，自剖面观之，第一窗户层182也可具有大于或小于第二窗户层186的宽度，用以调整发光元件1的光场以符合产品应用。布拉格反射层184可反射产生自发光叠层12之光。基本上布拉格反射层184具有数个具有不同折射率的材料对，其中折射率的差异至少为0.5，较佳至少为1。
表1
功率(mW)
例1 111.66
例2 112.78
第一窗户层182、第二窗户层186或两者皆不会覆盖或实质接触发光叠层12的侧面，所以发光叠层12产生的热可较易散逸。每一第一窗户层182与第二窗户层186的厚度约介于300纳米与1000纳米，较佳约介450纳米与550纳米以提升发光元件1的光摘出效率。表1显示例1与例2的实验数据，例1表示发光元件的第二窗户层186的厚度是70纳米，例2表示发光元件的第二窗户层186的厚度是500纳米。如表1所示，例2显示具有较例1为大的功率，这表示例2的发光元件较例1的发光元件具有较高的光摘出效率。布拉格反射层184的每一次层的厚度约介于30纳米与80纳米，较佳约介于40纳米与60纳米。布拉格反射层184次层的对数是介于5与50，较佳介于5与15。布拉格反射层184的总厚度约介于300纳米与8000纳米，较佳约介于500纳米与1500纳米。第一窗户层182或第二窗户层186的厚度相对于布拉格反射层184的总厚度的比值约介于0.03与3.33，较佳约介于0.3与1.1，以提升发光元件1的光摘出效率。第一窗户层182、第二窗户层186或两者的厚度皆足够厚，所以被局限于布拉格反射层184或发光叠层12的光可于第一窗户层182、第二窗户层186或两者的侧面被摘出。窗户层的材料相对于发光叠层12所发的光为透明，可为导电材料或绝缘材料。导电材料可为氧化铟锡(ITO)、氧化铟(InO)、氧化锡(SnO)、氧化镉锡(CTO)、氧化锑锡(ATO)、氧化锌(ZnO)、氧化镁(MgO)、砷化铝镓(AlGaAs)、氮化镓(GaN)、磷化镓(GaP)、氧化铝锌(AZO)、氧化锌锡(ZTO)、氧化镓锌(GZO)或氧化铟锌(IZO)。绝缘材料可为Su8、苯并环丁烯（BCB）、过氟环丁烷（PFCB）、环氧树脂（Epoxy）、丙烯酸树脂（Acrylic Resin）、环烯烃聚合物（COC）、聚甲基丙烯酸甲酯（PMMA）、聚对苯二甲酸乙二酯（PET）、聚亚酰胺(PI)、聚碳酸酯（PC）、聚醚酰亚胺（Polyetherimide）、氟碳聚合物（Fluorocarbon Polymer）、玻璃(Glass)、氧化钽(Ta2O5)、氧化铝(Al2O3)、二氧化硅(SiO2)、氧化钛(TiO2)、氮化硅(SiNx)、旋涂玻璃(SOG)或四乙氧基硅烷(TEOS)。每一次层的材料可与窗户层的材料相同。
另一实施例中，第一窗户层182、第二窗户层186或两者可作为布拉格反射结构的一部分。布拉格反射结构中的每一次层的厚度都遵循关系式d=m(λ/4n)，其中d表示次层的厚度，λ表示被布拉格反射层结构反射之光的波长，n表示次层的折射率，m表示任一正整数。例如当被布拉格反射层结构反射之光的波长约为460纳米，第一次层182与第二次层186的折射率约为1.5时，m为不小于3，较佳为介于3与7，以提升光摘出效率。
基板10可用以成长及/或支持位于其上的发光叠层12，其材料相对于发光叠层12产生之光为透明，可包含绝缘材料、导电材料或两者。绝缘材料可为蓝宝石（Sapphire）、钻石(Diamond)、玻璃(Glass)、石英(Quartz)、压克力(Acryl)或氮化铝(AlN)。导电材料可为碳化硅(SiC)、磷化碘(IP)、砷化镓(GaAs)、锗(Ge)、磷化镓(GaP)、磷砷化镓(GaAsP)、硒化锌(ZnSe)、磷化铟(InP)、氧化锌(ZnO)、镓酸锂(LiGaO2)或铝酸锂(LiAlO2)。
发光叠层12可直接成长于基板10之上，或通过粘结层(未显示)贴附至基板10之上。发光叠层12的材料可为半导体材料，包含一种以上的元素，此元素可选自镓(Ga)、铝(Al)、铟(In)、磷(P)、氮(N)、锌(Zn)、镉(Cd)与硒(Se)所构成的群组。第一半导体层122与第二半导体层126的电性相异，用以产生电子或空穴。主动层124可产生一种或多种色光，可为可见光或不可见光，其结构可为单异质结构、双异质结构、双侧双异质结构或多层量子阱。
第一电极14、第二电极16或两者用以接受外部电压，可由透明导电材料、金属材料或两者所构成。透明导电材料包含但不限于氧化铟锡(ITO)、氧化铟(InO)、氧化锡(SnO)、氧化镉锡(CTO)、氧化锑锡(ATO)、氧化铝锌(AZO)、氧化锌锡(ZTO)、氧化锌(ZnO)、氧化铟锌(IZO)、类钻碳薄膜(DLC)、氧化镓锌(GZO)或上述材料的组合。金属材料包含但不限于铜(Cu)、铝(Al)、铟(In)、锡(Sn)、金(Au)、铂(Pt)、锌(Zn)、银(Ag)、钛(Ti)、镍(Ni)、铅(Pb)、钯(Pd)、锗(Ge)、铬(Cr)、钴(Co)、镉(Cd)、锰(Mn)、锑(Sb)铋(Bi)、镓(Ga)、钨(W)、铍(Be)或上述材料的合金等。
图3是绘示出本申请案另一实施例的一灯泡分解示意图，一灯泡3具有一灯罩31；一透镜32，置于灯罩31之中；一照明模块34，位于透镜32之下；一灯座35，具有一散热槽36，用以承载照明模块34；一连结部37；以及一电连结器38，其中连结部37连结灯座35与电连接器38。照明模块34具有一载体33；以及多个前述任一实施例的发光元件30，位于载体33之上。
上述实施例仅为例示性说明本申请案的原理及其功效，而非用于限制本申请案。任何本申请案所属技术领域中具有通常知识者均可在不违背本申请案的技术原理及精神的情况下，对上述实施例进行修改及变化。因此本申请案的权利保护范围如上述的权利要求所列。

Claims (10)

1.一种发光元件，包含：
基板；
发光叠层，位于该基板之上；
第一窗户层，位于该基板之下；以及
布拉格反射层，位于该第一窗户层之下；
其中以剖面观之，该第一窗户层的宽度大致与该基板的宽度相等。
2.如权利要求1所述的发光元件，其中该第一窗户层的厚度介于450纳米与550纳米。
3.如权利要求1所述的发光元件，其中该第一窗户层相对于该布拉格反射层的厚度比值介于0.3与1.1。
4.如权利要求1所述的发光元件，其中该第一窗户层的厚度以关系式d=m(λ/4n)表示，其中d是厚度，λ是被布拉格反射结构反射之光的波长，n是该第一窗户层的折射率，m是介于3与7。
5.如权利要求1所述的发光元件，其中该布拉格反射层包含一具有不同折射率的材料对，其中该材料对的折射率之差至少是0.5。
6.如权利要求1所述的发光元件，其中该布拉格反射层包含一具有不同折射率的材料对，其中该材料对的折射率之差至少是1。
7.如权利要求1所述的发光元件，还包含一第二窗户层，位于该布拉格反射层之下。
8.如权利要求7所述的发光元件，其中该第二窗户层的厚度是介于450纳米与550纳米。
9.如权利要求7所述的发光元件，其中该第二窗户层相对于该布拉格反射层的厚度比值是介于0.3与1.1。
10.如权利要求7所述的发光元件，该第二窗户层的厚度是以关系式d=m(λ/4n)表示，其中d是厚度，λ是被布拉格反射结构反射之光的波长，n是该第一窗户层的折射率，m是介于3与7。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110556463A (zh) * 2018-05-30 2019-12-10 首尔伟傲世有限公司 具有分布布拉格反射器的发光二极管芯片
CN111834390A (zh) * 2020-06-12 2020-10-27 福州大学 一种全彩化三极发光管显示器件及制造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014108295A1 (de) 2014-06-12 2015-12-17 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauelement
TWI778010B (zh) * 2017-01-26 2022-09-21 晶元光電股份有限公司 發光元件

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020020842A1 (en) * 2000-04-21 2002-02-21 Kazuaki Sasaki Semiconductor light-emitting device and method for manufacturing thereof
TWM244587U (en) * 2003-09-02 2004-09-21 Ite Compound Semiconductor Cor LED with compound reflection structure
US20060054905A1 (en) * 2004-09-10 2006-03-16 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US20080179605A1 (en) * 2007-01-29 2008-07-31 Yuji Takase Nitride semiconductor light emitting device and method for fabricating the same
CN201332107Y (zh) * 2009-01-16 2009-10-21 吴铭兴 发光二极管的结构改良
CN101944566A (zh) * 2010-09-28 2011-01-12 厦门市三安光电科技有限公司 具有透明增光键合层的四元发光二极管及其制作工艺

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9362459B2 (en) * 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
US8963178B2 (en) * 2009-11-13 2015-02-24 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020020842A1 (en) * 2000-04-21 2002-02-21 Kazuaki Sasaki Semiconductor light-emitting device and method for manufacturing thereof
TWM244587U (en) * 2003-09-02 2004-09-21 Ite Compound Semiconductor Cor LED with compound reflection structure
US20060054905A1 (en) * 2004-09-10 2006-03-16 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US20080179605A1 (en) * 2007-01-29 2008-07-31 Yuji Takase Nitride semiconductor light emitting device and method for fabricating the same
CN201332107Y (zh) * 2009-01-16 2009-10-21 吴铭兴 发光二极管的结构改良
CN101944566A (zh) * 2010-09-28 2011-01-12 厦门市三安光电科技有限公司 具有透明增光键合层的四元发光二极管及其制作工艺

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110556463A (zh) * 2018-05-30 2019-12-10 首尔伟傲世有限公司 具有分布布拉格反射器的发光二极管芯片
CN110556463B (zh) * 2018-05-30 2022-06-03 首尔伟傲世有限公司 具有分布布拉格反射器的发光二极管芯片
CN111834390A (zh) * 2020-06-12 2020-10-27 福州大学 一种全彩化三极发光管显示器件及制造方法
CN111834390B (zh) * 2020-06-12 2023-09-22 福州大学 一种全彩化三极发光管显示器件及制造方法

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