TWM244587U - LED with compound reflection structure - Google Patents

Description

M244587 V. Creation instructions (l) 1. [Technical field to which the new type belongs This invention is a light-emitting diode with a reflective structure of a compound, especially a light-emitting diode that can emit light through a reflective layer Respectively ^ j kinds of irradiated light sources, so as to reduce the dissipation of the light source of the light emitting diode, k 幵 the brightness of the light emitting diode in use, and is suitable for non-kanban, store, display lighting, advertising kanban " The structure of fakes. (2) [Previous technology] According to a conventional light-emitting diode (as shown in FIG. 6), the substrate 5, an N-type semiconductor layer 6, and a light-emitting diode: It consists of a transparent = 7, and the N-type semiconductor is "stacked on the H-conductor 5" and the hairwell screen a 9 total Asada λτ Yunyue phase punishment main i μ layer 6 2 series layer is richer than the N-type On the semiconductor layer 6, the L-shaped Λ7 series is stacked on the light-emitting layer 62, and the type semiconductors: ^ and Q + conductor layer 7 respectively have an electric: 2 layers 6 N-type electrodes 6 X and? -Type electrodes Let the illegal electrode be defined as when the conventional light-emitting diode is used to emit light: structure :: light-emitting diode. Side semiconductor layer 6 and P-type semiconductor: 7 temples have-part of the light source is made of transparent substrate 5 It is: the surface is emitted, and the surface of the other-portion 6 and the P-type semiconductor layer 7 is only; the surface is emitted, and the light source of the semiconductor layer portion is part of the light source from the transparent substrate b. As for the other—the phenomenon of escape, which leads to The bamboo shoots are emitted from two sides, so that the light source is scattered, so the light-emitting two-body cannot be provided: the brightness of the polar body when used is weakened, and the degree. The light source actually emitted when it emits light is another—the conventional light-emitting diode (as shown in Figure 7), which is based on—Reverse Page 5 M244587 V. Creative Instructions (2): Layer 2 (or-metal layer) ), -Transparent substrate 5, -N-type semiconductor: N-type semi-Twilight ^ light layer 6 2 and a P-type semiconductor layer 7 ', and the n-type semiconductor layer, the body layer 6 is laminated on the transparent substrate 5, and The light-emitting layer 9 is on the body layer 6 and the P-type semiconductor layer 7 is laminated on the light-emitting semiconductor layer 6 and the P-type semiconductor layer 7 each having an electrode & electrode 6 1 u. ^ / 目 1 丨 Set $ on the bottom surface of the transparent substrate 5. In Suimingji-type electrode b 1 n # e 6 丄 and a p-type electrode 7 丄 the reflective layer β 4c; [— σ, if it constitutes a light-emitting Diode. And by setting π — 0 面 夕 口 口 — nt: * ^ r

Reverse the nose (early a reflective layer 8), so that when the light source passes through the transparent substrate 5, it is made up of one layer and one layer of light source. However, it can reduce the light source of the light emitting diode and enhance the light emitting diode. The brightness in use, but in fact the light source is still very serious, so the overall brightness improvement is still limited or interferes with the existing LED process' and the subsequent packaging process; or there is another conventional light-emitting diode ( (As shown in Figure 8)

Substrate 90, a reflective layer S laminated on the substrate 90, an N-type semiconductor layer 92 on the reflective layer 91, a light-emitting layer g3 laminated on the N-type semiconductor layer 92, a layer A P-type semiconductor layer 9 4 on the light-emitting layer 93, a window layer 95 stacked on the p-type semiconductor layer 94, and a contact layer 96 stacked on the window layer 95, and On the substrate 90 and the contact layer g 6, electrodes 9 7 and 9 8 are respectively provided. Because the reflective layer 9 1 of the structure 9 is above the substrate 9 and can be used to reflect downward light sources to increase light, but this structure The effective reflection angle of the reflective layer 9 1 is 20. Therefore, it is impossible to reflect all the light sources. Therefore, the conventional light-emitting diodes still cannot meet the needs of current users. Three, [new content]

M244587 V. Creation Instructions (3) 爰 Yes, the main purpose of this creation is to solve the lack of habit and avoid the existence of the absence. This creation is a light-emitting diode with a reflective structure of a compound, which is designed to make the light-emitting diode When the light source is emitted, the light sources incident from various angles are reflected by the reflective layers provided on the bottom surface or on the substrate, so as to reduce the dissipation of the light source of the light emitting diode. 'K 幵 The light emitting diode & brightness. 'In order to achieve the above purpose, this invention creates a light-emitting diode with a reflective structure of a compound' system including: stacked reflective layers, each of which is a distributed Bragg Reflector (DBR); A substrate, the bottom surface of the substrate is disposed on the top surface of the reflective layers stacked on top of each other; an N-type semiconductor layer, the bottom surface of the N-type semiconductor layer is stacked on the surface of the substrate, and the N-type semiconductor layer is It has an N-type electrode; a light-emitting layer, the bottom surface of which is laminated on the surface of the N-type semiconductor; a P-type semiconductor layer, and the bottom surface of the edge p-type semiconductor layer is laminated on the surface of the light-emitting layer, and The p-type semiconductor layer is provided with a p-type electrode; if so, with this structure, the stacked reflective layers can be disposed below the substrate. In addition, the light-emitting diodes in this creation can also be: a substrate; stacked reflective layers, each reflective layer is a distributed Bragg reflective layer (DishibUed B: = g Reflector, DBR), and the stacked The bottom surface of the reflective layer is the top surface of each other;-the N-type semiconductor layer, the bottom surface of the "semiconductor layer" layer is richer than the top surface of the above-mentioned reflective layers, a light-emitting layer, the surface, and the p-type semiconductor layer The upper system has a ρ-type electrode; for example, \ n means that the η plane is stacked on the surface of the upper semiconductor; -η = bulk layer; the bottom surface of the w-type semiconductor layer is stacked

Page 7 M244587

Placed between the substrate and the N-type semiconductor layer. Fifth, the creation description (4). The structure can be made of the superposed reflective layers. It can be used for the above structure. s, 丨 c When k is used for the light-emitting diode to emit light, it is reflected by each reflective layer, and the light-emitting diode is filled at various angles, and the light source is reduced to reduce the dissipation of the light-emitting diode. The one who violated the original brightness. ^ IV. [Implementation] 凊 Refer to "Figure 1", which is a schematic diagram of the cross-section of a polar body. ^ ^ Below. This creation is a compound reflection ~ The light-emitting diode is composed of two reflective layers 丄, 丄 a, a substrate 2, a light-emitting layer 32, an N-type semiconductor layer 3, and a p-type semiconductor layer 4 stacked on each other, and the reflective layers 2. 丄 a is formed before the light emitting diode die cutting process, and the stacked reflective layers 1 and 1 a are arranged under the substrate 2 so that the light emitting diode uses the reflection when emitting a light source. The layerer and the reflective layer 1 a respectively reflect the light source incident from various angles, so as to reduce the phenomenon of light emitting diode light source scattering, and improve the brightness of the light emitting diode in use. The above-mentioned reflective layer 1 and the reflective layer 1a are distributed Bragg reflectors (DBR), thereby forming a reflexive structure, and the reflective layer 1 and the reflective layer 1a are stacked in pairs. It is composed of a compound, and the material of the compound can be an oxide (ox i de), a halide (nitride), a carbide (carbide), and a fluoride (fluor ide), etc., so that the reflective layer 1, la is a reflective layer with a large incident angle, high reflectivity, and wide bandwidth, and dbr in the reflective layer structure

Page 8 M244587 5. Creation instructions (5) are based on the light-emitting diode output spectrum. For example, when the light-emitting diode output spectrum is between 500nm and 520nm, a set of 500nm DBR is used, plus one Groups or arrays of DBR with a spectrum greater than 50 nm form a reflective structure. The bottom surface of the substrate 2 is disposed on the top surface of the reflective layer 1, and the substrate 2 is transparent. The bottom surface of the N-type semiconductor layer 3 is laminated on the surface of the substrate 2, and the N-type semiconductor layer 3 has an N-type electrode 3 1 thereon. The bottom surface of the light-emitting layer 32 is laminated on the surface of the n-type semiconductor layer 3, the bottom surface of the P-type semiconductor layer 4 is laminated on the surface of the light-emitting layer 32, and the P-type semiconductor layer 4 has A p-type electrode 4 丄; such as 疋, a new light-emitting diode with a compound reflection structure is formed by the above structure. Please refer to the figure, the light-emitting layer of layer 4 is transparent to the point where the light can be irradiated to Prague, and then the light source can be transmitted again through the semiconductor light diode (Figures 2 and 3), which is a characteristic diagram of the creative cross-section of this creative diode. As shown in the figure: When the light diode of this creation is light source from 3 2 'the part of the light source is from the p-type semiconductor, and the other part of the light source is penetrated by the surface of the substrate 2 = Ϊ f surface At this time, the surface of the light source penetrating to the bottom surface of the substrate 2 and the reflective layer 1 is distributed (1 Distributed Bragg Refiector (DBR)), so the light source on the ni: f1 surface is uniformly reflected, and After the reflection is passed through the bottom surface of the substrate 2 through the surface of the substrate 2, the N-type semiconductor layer 3 and? Don't bundle it into 1 clothes ® t silly ^ 3 ^^ 4νΛΛ " ^ Zi Cong Zeng's surface is emitted, so that when the light source emits a part of the light source, it is accepted by the reflective layer 丄

The light source emitted by the photodiode will have a radiating layer 1 and hit the reflecting layer 1a to reduce the brightness for the dissipation of the light emitting diode light source. If necessary, the stacked reflective layers are to be diffused by each reflective layer source (as shown in Fig. 3), and the whole a, 1 b of the light emitting diode can be improved according to the requirements. It is required that the thickness of each reflective layer can be matched with the polarizer to obtain better reflection efficiency. For practical applications, light sources with stacked low-light-emitting diodes at different angles of radiation are also at 60 degrees. Only, the light source transmission rate is about 7 3 poles, and the light source transmission rate is about丄 Diodes can effectively reduce the overall immunity of light-emitting diodes. By the same token, the light source transmittance of the diodes will be reduced to the dissipation of the light sources of the polar bodies, and the schematic diagram of the development state of the compound reflection structure will be improved. A substrate M244587 5. After the creation instructions (6), 'reflection is performed, and the same part is transmitted through the reverse at a different angle to reflect, and a large phenomenon is achieved, which enhances the light-emitting diode. Of course, this creation can also be based on the actual situation, la, and then a number of reflective layers are laminated to reflect light incident from various angles, respectively, and the brightness of the light source body of the light emitting diode is greatly reduced. The material is made of compounds, and the whole setting is made to make the light of this creation more suitable for actual use. Please refer to "Figure 4". Most of the original reflective layer designs can effectively reduce the angle of incidence. Time Transmittance, such as the light-emitting diode% provided with a single reflective layer, and the light-emitting diode 20% provided with a double-reflective layer, so the light source of the light-emitting body provided with a double-reflective layer is diffused. The light-emitting diode is lower, so it can reduce the overall brightness of the light-emitting diode more effectively. Please refer to "Figure 5", which is a cross section of the second embodiment of the light diode

Page 10 M244587 V. Creative Instructions (7) '-a · 2a, a reflective layer 1, la, an N-type semiconductor layer 3β, a light-emitting layer 3 2a, and a P-type semiconductor layer 4a, and the The P-type semiconductor layer 4a has a P-type electrode 4 1 a, and the reflective layers 1 and 1 a can be formed in a stupid process of a light-emitting diode. a is not placed between the substrate 2 a and the N-type semiconductor layer 3 a, so that when the light emitting diode emits a light source, the light sources that are incident at various angles are reflected by the reflective layers 1 and 1 a respectively, thereby reducing light emission The light source of the diode is dissipated, which enhances the brightness of the light emitting diode in use.

The stacked reflective layer 1 and 1 a are distributed Bragg Reflector (DBR), and the reflective layer is grown by organic metal chemical vapor phase epitaxy (MOCVD) or molecular beam The epitaxial (M BE) grows' to form a reflective structure, and the reflective layers 1 and 1a are composed of a pair of stacked compounds, and the material of the compound is matched with the light-emitting polar crystal process, such as In the AiGalnP light-emitting diode, it can be AllnP, AlGaInP, AlAs, GaAs, etc .; for example, in the InGaN light-emitting diode, it can be InGaN, AlGaN, GaN, etc., and the bottom surfaces of the stacked reflective layers 1 and ia overlap each other. It is set on the top surface of the substrate 2a, and the DBR in the reflective structure is composed according to the light-emitting diode output spectrum. For example, when the light-emitting diode output spectrum is between 590nm and 620nm, a group of 590 nm DBR, plus a set or array of DBRs with a spectrum greater than 590 nin to form a reflective structure. Please also refer to Annex I, which is a graph of the reflectance versus wavelength for this creative and customary use. The figure shows the comparison of the original reflective layer 1 and 1 a (Brag mirrors with two wavelength combinations) and the two conventional Bragg mirrors. After comparison, we can know that

Page 11 M244587 V. Creation Instructions (8) The creation has both the south reflectivity and extremely wide bandwidth. (A, b, and c curves are taken from a paper by P · A · Kish et al.). Because the reflection layer of this creation is Bragg reflection (Distributed Bragg

Reflector (DBR) structure, and the stacked reflective layer structure is formed on the bottom of the substrate before the light emitting diode die cutting process, or is formed on the substrate and the N-type in the stupid process of the light emitting diode. Between the semiconductor layers; this creation can create a new structure—the stacked DBR reflective layer—by using the characteristics of the Bragg Reflector (DBR) and wavelength relationship. The "light-emitting diode with compound reflection structure" in this creation almost overcomes the shortcomings of the Distributed Bragger Reflection (DBR) which cannot reflect all the light due to the limited bandwidth, and avoids the use of Metal reflective layer, derived from the process difficulty. With the new structure of this creation, when a light emitting diode emits a light source, the light sources that are incident at various angles are reflected by the reflective layers, respectively, so that the light source of the light emitting diode is reduced, and the light emitting diode is improved. Use the brighter ones. Those mentioned above are only the preferred embodiments of this creation. When the scope of implementation of this creation cannot be limited, that is, all equal changes and modifications made in accordance with the scope of the patent application for this creation shall still belong to this creation patent. Within the scope of 0, the above-mentioned 7 mentioned in the above description, "This creation of a light-emitting diode with a reflective structure of a compound can be effective, and it is well acquainted with the shortcomings of the structure, making it more progressive and practical, and meets the requirements for new patent applications. , File a patent application according to law, please

M244587

Page 13 M244587 Simple illustration of the drawing 5. [Simplified illustration of the drawing] Fig. 1 is a schematic sectional view of the first embodiment of this creation. FIG. 2 is a schematic view of a reflection state in the first embodiment of the present invention. Fig. 3 is a schematic sectional view of the second embodiment of the present invention. Figure 4 is a graph showing the comparison of the incidence angle and transmittance of the light source between the light-emitting diode with a double reflection layer and the light-emitting diode with a single reflection layer. Fig. 5 is a schematic sectional view of a third embodiment of the present invention. Fig. 6 is a schematic diagram of a light emitting state of a conventional light emitting diode. Fig. 7 is a schematic diagram of the light emitting state of another conventional light emitting diode. Fig. 8 is a schematic view of the light emitting state of a light emitting diode which is used again. [Illustration of drawing number], (this creative part): Reflective layer 1, la, lb substrate 2, 2 a N-type semiconductor layer 3, 3a N-type electrode 3 1 Light-emitting layer 32, 32a P-type semiconductor layer 4, 4a P Type electrodes 41, 41a (conventional part): Transparent substrate 5 N-type semiconductor layer 6 N-type electrode 6 1

Page 14 M244587 Simple illustration of the light emitting layer 6 2 P-type semiconductor layer 7 P-type electrode 7 1 Reflective layer 8 Substrate 9 0 Reflective layer 9 1 N-type semiconductor layer 92 Light-emitting layer 9 3 P-type semiconductor layer 94 Window layer 9 5 Contact layer 9 6 Electrode 9 7, 9 8

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Claims (1)

M244587 6. Application scope 1. A light-emitting diode with a compound reflection structure, which at least includes: a stacked reflective layer, each reflective layer being a distributed Bragg reflector (DBR), so as to form a A reflective structure; a substrate, the bottom surface of which is arranged on the top surface of the reflective layers stacked on top of each other; an N-type semiconductor layer formed on the substrate; a light-emitting layer formed on the N-type semiconductor layer; A P-type semiconductor layer is coated on the light-emitting layer; the stacked reflective layers are arranged below the substrate so that when the light-emitting diode emits a light source, the light sources that are incident at various angles are reflected by the reflective layers respectively 'In order to reduce the emission of the light source of the light emitting diode and improve the brightness of the light emitting diode in use. 2. The light-emitting diode with a reflective structure of a compound as described in item 1 of the scope of the patent application, wherein D B R in the reflective structure is based on the output spectrum of the light-emitting diode. 3. The light-emitting diode with a compound reflection structure as described in item 1 of the scope of the patent application, wherein the substrate is transparent. 4 · The light-emitting diode of the compound reflective structure described in item 2 of the scope of the patent application, wherein the material of the compound is oxide (ο X ide), nitride (carbide), and fluoride (carbide) And other materials. 5 · A light emitting diode with a compound reflection structure, which at least comprises: a substrate, Page 16 M244587 Each of the stacked reflective layers is a distributed Bragg Reflector (DBR), so as to open / into one; 5 structures, and the reflective structure is formed on the substrate; 成 ^ into a reverse: an N-type A semiconductor layer is formed on the above-mentioned reflective structure; a light-emitting layer is formed on the N-type semiconductor layer; a p-type semiconductor layer is overlaid on the light-emitting layer; if the light-emitting diode is formed by the above-mentioned structure When the light source is emitted, each reflecting layer reflects the light source incident at various angles respectively, so as to reduce the light source dissipation of the light emitting diode and improve the brightness of the light emitting diode in use ^ 6 0 The light-emitting diode with a compound reflection structure according to item 5, wherein the DBR in the reflection structure is composed according to the output spectrum of the light-emitting diode ^. 7 · The light-emitting diode with a compound reflection structure as described in item 5 of the scope of the patent application, each reflective layer is composed of a pair of stacked compounds, and the material of the compound is matched with a light-emitting diode epitaxial process The materials can be AllnP, AlGaInP, AlAs, GaAs, etc. in the AlGalnP light-emitting diode, and InGaN, AlGaN, GaN, etc. in the InGaN light-emitting diode. 8. The light-emitting diode with a compound reflection structure as described in item 5 of the scope of the patent application, wherein the reflective layer is grown by an organometallic chemical vapor phase epitaxial deposition method (MOCVD) or a molecular beam stupid crystal (MBE) growing up. Page 17