TWI626873B - Manufacturing method of printed wiring board - Google Patents

Manufacturing method of printed wiring board Download PDF

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Publication number
TWI626873B
TWI626873B TW105123902A TW105123902A TWI626873B TW I626873 B TWI626873 B TW I626873B TW 105123902 A TW105123902 A TW 105123902A TW 105123902 A TW105123902 A TW 105123902A TW I626873 B TWI626873 B TW I626873B
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Taiwan
Prior art keywords
carrier
layer
ultra
thin copper
wiring board
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TW105123902A
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Chinese (zh)
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TW201720261A (en
Inventor
Akitoshi Takanashi
髙梨哲聡
Hiroto Iida
飯田浩人
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Mitsui Mining & Smelting Co., Ltd.
三井金屬鑛業股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/007Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

本發明提供一種印刷配線板之製造方法,其係可有意義地防止增層配線層之形成步驟中藥液朝載體與極薄銅層之間的界面侵入,且可有意義地抑制無芯支撐體之分離步驟中極薄銅層之部分破裂及因此產生之缺陷。本發明之方法包含下述步驟:準備於載體之剝離層側之面中,起伏曲線要件之平均高度Wc與峰計數Pc之乘積Wc×Pc為20~50μm之附載體銅箔之步驟、於載體或極薄銅層之上形成增層配線層而製作附增層配線層之積層體之步驟、將附增層配線層之積層體於剝離層分離而得含增層配線層之多層配線板之步驟,及加工多層配線板而得印刷配線板之步驟。 The invention provides a method for manufacturing a printed wiring board, which can meaningfully prevent the invasion of the medicinal solution toward the interface between the carrier and the ultra-thin copper layer in the step of forming the additional wiring layer, and can significantly suppress the coreless support. Part of the ultra-thin copper layer in the separation step was cracked and the resulting defects. The method of the present invention includes the steps of preparing a product of the average height Wc of the undulation curve element and the peak count Pc in the surface on the side of the release layer of the carrier, and the product Wc × Pc of the copper foil with the carrier is 20-50 μm. Or the step of forming a build-up wiring layer on the ultra-thin copper layer to prepare a build-up body with the build-up wiring layer, separating the build-up body with the build-up wiring layer from the release layer to obtain a multilayer wiring board containing the build-up wiring layer Steps, and a step of processing a multilayer wiring board to obtain a printed wiring board.

Description

印刷配線板之製造方法 Manufacturing method of printed wiring board

本發明係有關印刷配線板之製造方法。 The present invention relates to a method for manufacturing a printed wiring board.

近幾年來,為了提高印刷配線板之安裝密度並小型化,已廣泛進行印刷配線板之多層化。此種多層印刷配線板基於輕量化或小型化為目的而大多利用於攜帶用電子設備。因此,對該多層印刷配線板要求層間絕緣膜之進一步厚度減低以及作為配線板之更進一步薄型化及輕量化。 In recent years, in order to increase the mounting density and miniaturization of printed wiring boards, multilayered printed wiring boards have been widely used. Such multilayer printed wiring boards are mostly used in portable electronic devices for the purpose of weight reduction or miniaturization. Therefore, the multilayer printed wiring board is required to further reduce the thickness of the interlayer insulating film and further reduce the thickness and weight of the wiring board.

作為滿足此等要求之技術,係採用利用無芯增層法之多層印刷配線板之製造方法。所謂無芯增層法係不使用所謂芯基板,而使絕緣層與配線層交互積層(增層)而多層化之方法。關於無芯增層法,提案使用附載體之銅箔以使支撐體與多層印刷配線板之剝離容易進行。例如專利文獻1(日本特開2005-101137號公報)中,揭示半導體元件搭載用封裝基板之製造方法,其包含於附載體銅箔之載體面上貼附絕緣樹脂層作成支撐體,於附載體銅箔之極薄銅層側藉由圖型電解銅鍍敷而形成第一配線導 體,形成增層配線層,剝離附載體支撐基板,去除極薄銅層。 As a technology meeting these requirements, a manufacturing method of a multilayer printed wiring board using a coreless build-up method is adopted. The so-called coreless build-up method is a method in which an insulating layer and a wiring layer are alternately laminated (build-up) without using a so-called core substrate, and are multilayered. Regarding the coreless build-up method, it is proposed to use a copper foil with a carrier to facilitate peeling of the support from the multilayer printed wiring board. For example, Patent Document 1 (Japanese Patent Application Laid-Open No. 2005-101137) discloses a method for manufacturing a package substrate for mounting a semiconductor element, which includes attaching an insulating resin layer on a carrier surface of a copper foil with a carrier as a support, and attaching the carrier to the carrier. The very thin copper layer side of the copper foil is formed by pattern electrolytic copper plating to form the first wiring conductor. Body, forming an additional wiring layer, peeling off the supporting substrate with the carrier, and removing the extremely thin copper layer.

不過,如上述之方法中,由於附載體銅箔與支撐體為相同尺寸,故載體與極薄銅層之間的界面端部露出外部。因此,增層配線層形成時使用之藥液(例如蝕刻液或去膠渣液)有時會自載體與極薄銅層之間的界面端部侵入至界面內部。若此藥液侵入界面內部則使載體與極薄銅層之間之密著力降低,於製造途中有增層配線層自支撐體剝落之情況,導致良率降低。 However, in the method described above, since the copper foil with a carrier and the support are the same size, the interface end between the carrier and the ultra-thin copper layer is exposed to the outside. Therefore, a chemical solution (such as an etching solution or a slag removing solution) used in forming the build-up wiring layer may invade into the interface from the end of the interface between the carrier and the ultra-thin copper layer. If this medicinal solution penetrates into the interface, the adhesion between the carrier and the ultra-thin copper layer is reduced, and during the manufacturing process, the increased wiring layer may peel off from the support, resulting in a decrease in yield.

作為該問題對策之印刷配線板之製造方法,提案有於製品形成用區域之外周設置多餘區域,以使載體與極薄銅層之間的界面端部不露出於外部之方式形成增層配線層之方法。例如專利文獻2(日本特開2014-130856號公報)中,揭示印刷配線板之製造方法,其包含準備極薄銅層區域小於載體區域之附載體銅箔(可分離金屬箔),準備較載體區域尺寸大的預浸體(支持基板),積層極薄銅層與預浸體形成支撐體,以與載體相同尺寸形成增層配線層,於極薄銅層內側切斷積層體後分離,對載體實施減去加工形成最外配線層。依據該方法,使極薄銅層與載體間的界面與外部環境阻斷,可防止增層配線層形成時之藥液自界面侵入。 As a method for manufacturing a printed wiring board as a countermeasure to this problem, it is proposed to provide an extra area on the periphery of the product formation area so that the end of the interface between the carrier and the ultra-thin copper layer is not exposed to the outside. Method. For example, Patent Document 2 (Japanese Unexamined Patent Application Publication No. 2014-130856) discloses a method for manufacturing a printed wiring board, which includes preparing a copper foil with a carrier (a separable metal foil) having an extremely thin copper layer area smaller than a carrier area, and preparing a carrier The prepreg (support substrate) with a large area size, the ultra-thin copper layer is laminated to form a support with the prepreg, and the build-up wiring layer is formed with the same size as the carrier. The laminated body is cut off inside the ultra-thin copper layer and separated. The carrier is subjected to subtractive processing to form the outermost wiring layer. According to this method, the interface between the ultra-thin copper layer and the carrier is blocked from the external environment, and the chemical liquid can be prevented from intruding from the interface when the build-up wiring layer is formed.

[先前技術文獻] [Prior technical literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2005-101137號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2005-101137

[專利文獻2]日本特開2014-130856號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2014-130856

然而,專利文獻2之方法中,有如下問題:i)必須預先製作經區域加工之附載體銅箔以使極薄銅層區域小於載體區域,ii)使自極薄銅層區域伸出之區域及自附載體銅箔伸出之預浸體區域成為製品對象外之無用區域,iii)於剝離支撐體之前,必須將於端面露出剝離層之所有積層體四邊切斷之步驟。 However, the method of Patent Document 2 has the following problems: i) the area-processed copper foil with a carrier must be made in advance so that the area of the ultra-thin copper layer is smaller than the area of the carrier, and ii) the area protruding from the area of the ultra-thin copper layer And the area of the prepreg protruding from the copper foil with the carrier becomes an unnecessary area outside the product object. Iii) Before peeling the support, it is necessary to cut off all sides of the laminate with the release layer exposed on the end face.

本發明人等如今獲得如下見解:使用載體之剝離層側之面滿足特定條件(後述之Wc×Pc為20~50μm)之附載體銅箔藉由無芯增層法進行印刷配線板之製造,而不需要如專利文獻2所進行之附載體銅箔之區域加工或預浸體之尺寸控制,即可有意義地防止增層配線層之形成步驟中藥液朝載體與極薄銅層之間的界面侵入,而且,可有意義地抑制無芯支撐體之分離步驟中極薄銅層之部分破裂及因此產生之缺陷(例如極薄銅層對載體之部分殘渣,或極薄銅層中之針孔發生及起因於此之過蝕刻)。 The present inventors now have the insight that the use of a copper foil with a carrier that meets specific conditions (the Wc × Pc to be described later is 20 to 50 μm) using a carrier-side surface of the carrier is used to produce a printed wiring board by a coreless build-up method, Without the need for the area processing of copper foil with a carrier or the size control of the prepreg as described in Patent Document 2, it is possible to meaningfully prevent the medicinal solution from moving toward the carrier and the ultra-thin copper layer in the step of forming the additional wiring layer. Interface intrusion, and it can significantly suppress the partial cracking of the ultra-thin copper layer and the defects generated in the separation step of the coreless support (such as a part of the ultra-thin copper layer to the carrier, or pinholes in the ultra-thin copper layer) Occurs and results from overetching).

因此,本發明之目的在於提供印刷配線板之製造方法,其不需要附載體銅箔之區域加工或預浸體之尺寸控制,而可有意義地防止增層配線層之形成步驟中藥液 朝載體與極薄銅層之間的界面侵入,且可有意義地抑制無芯支撐體之分離步驟中極薄銅層之部分破裂及因此產生之缺陷。 Therefore, an object of the present invention is to provide a method for manufacturing a printed wiring board, which does not require the processing of the area of the copper foil with a carrier or the size control of the prepreg, and can meaningfully prevent the medicinal solution in the step of forming the wiring layer. Intrusion toward the interface between the carrier and the ultra-thin copper layer, and it is possible to significantly suppress the partial cracking of the ultra-thin copper layer and the resulting defects during the separation step of the coreless support.

依據本發明之一樣態,係提供一種方法,其係印刷配線板之製造方法,且包含下述步驟:準備依序附載體銅箔之步驟,該附載體銅箔係具備載體、剝離層及極薄銅層,且前述載體之前述剝離層側之面中,依據B0601-2001測定之起伏曲線要件之平均高度Wc與峰計數Pc之乘積的Wc×Pc為20~50μm者,於前述載體或極薄銅層上形成增層配線層而製作附增層配線層之積層體之步驟,將前述附增層配線層之積層體於前述剝離層分離而得含前述增層配線層之多層配線板之步驟,及加工前述多層配線板而獲得印刷配線板之步驟。 According to the aspect of the present invention, a method is provided, which is a method for manufacturing a printed wiring board, and includes the following steps: a step of preparing a copper foil with a carrier in order, the copper foil with a carrier having a carrier, a release layer, and an electrode; A thin copper layer, and in the surface of the aforementioned release layer side of the aforementioned carrier, the average height Wc of the undulating curve requirements measured in accordance with B0601-2001 and the peak count Pc of the product Wc × Pc is 20 to 50 μm. The step of forming a build-up wiring layer with a build-up wiring layer on a thin copper layer, separating the build-up body with the build-up wiring layer from the peeling layer to obtain a multilayer wiring board containing the build-up wiring layer. Steps, and a step of obtaining a printed wiring board by processing the aforementioned multilayer wiring board.

10、30‧‧‧附載體銅箔 10, 30‧‧‧ copper foil with carrier

12、32‧‧‧載體 12, 32‧‧‧ carrier

14、34‧‧‧剝離層 14, 34‧‧‧ peeling layer

16、36‧‧‧極薄銅層 16, 36‧‧‧ extremely thin copper layer

18‧‧‧無芯支撐體 18‧‧‧ coreless support

20‧‧‧光阻劑圖型 20‧‧‧Photoresist Pattern

21‧‧‧蝕刻阻劑 21‧‧‧ Etching Resistant

22‧‧‧圖型鍍敷 22‧‧‧ Pattern plating

24‧‧‧配線圖型 24‧‧‧Wiring pattern

26‧‧‧第1配線層 26‧‧‧The first wiring layer

28‧‧‧絕緣層 28‧‧‧ Insulation

38‧‧‧第2配線層 38‧‧‧ 2nd wiring layer

40‧‧‧第n配線層 40‧‧‧nth wiring layer

42‧‧‧增層配線層 42‧‧‧Additional wiring layer

44‧‧‧多層配線板 44‧‧‧Multilayer wiring board

46‧‧‧印刷配線板 46‧‧‧printed wiring board

圖1A係顯示無芯增層法之一樣態的嵌埋電路形成法之一例中之前半步驟之圖。 FIG. 1A is a diagram showing the first half steps in an example of the embedded circuit forming method in the same state as the coreless build-up method.

圖1B係顯示無芯增層法之一樣態的嵌埋電路形成法之一例中之接續圖1A所示之步驟之後半步驟。 FIG. 1B shows an example of the embedded circuit formation method in the same manner as the coreless build-up method, following the steps shown in FIG. 1A after the latter half.

圖2A係顯示無芯增層法之另一樣態的載體/減去加工法之一例中之前半步驟之圖。 FIG. 2A is a diagram showing the first half steps in another example of the carrier / subtraction processing method of the coreless build-up method.

圖2B係顯示無芯增層法之另一樣態的載體/減去加工 法之一例中之接續圖2A所示之步驟之後半步驟。 Figure 2B shows another form of carrier / subtraction processing of the coreless build-up method In one example of the method, the second half of the step shown in FIG. 2A is continued.

定義 definition

以下顯示用以特定本發明所用之參數定義。 The following shows the parameter definitions used to specify the invention.

本說明書中所謂「峰計數Pc」係依據B0601-2001(ISO 4287-1997)測定之參數的每輪廓曲線中之評價長度(例如0.8mm)之山數。 The "peak count Pc" in this specification refers to the number of mountains per evaluation length (for example, 0.8 mm) in each profile curve of a parameter measured according to B0601-2001 (ISO 4287-1997).

本說明書中所謂「起伏曲線要件之平均高度Wc」係依據B0601-2001(ISO 4287-1997)測定之參數的基準長度中之起伏曲線要件之高度之平均值。 The "average height Wc of the undulating curve element" in this specification is the average value of the height of the undulating curve element in the reference length of the parameter measured according to B0601-2001 (ISO 4287-1997).

本說明書中所謂「十點平均粗糙度Rz」係指依據B0601-1994決定之參數的基準長度之粗度曲線中,自最高的山頂至依高度順序第5高之山高的平均與自最深之谷底至依深度順序第5深之谷深之平均之和。 The so-called "ten-point average roughness Rz" in this description refers to the average curve from the highest peak to the fifth highest peak in the height order and the deepest valley bottom in the roughness curve based on the reference length of the parameter determined by B0601-1994. The sum of the averages of the 5th valley depth in the depth order.

本說明書中所謂載體之「電極面」係指載體製作時與陰極接觸之側的面。 The "electrode surface" of the carrier in this specification refers to the side of the carrier that comes into contact with the cathode when the carrier is manufactured.

本說明書中所謂載體之「析出面」係指載體製作時電解銅析出之面,亦即不與陰極接觸之側的面(電解液面)。 The "precipitating surface" of the carrier in this specification refers to the surface on which the electrolytic copper is precipitated when the carrier is produced, that is, the side (the electrolyte surface) that is not in contact with the cathode.

印刷配線板之製造方法 Manufacturing method of printed wiring board

本發明有關印刷配線板之製造方法。本發明之方法包 含(1)準備具有特定表面輪廓之附載體銅箔之步驟,及(2)利用無芯增層法之印刷配線板之製造製程。而且,利用無芯增層法之印刷配線板之製造製程包含(2a)於載體或極薄銅層上形成增層配線層之步驟,(2b)於剝離層分離所得積層體之步驟,及(2c)加工所得多層配線板之步驟。 The present invention relates to a method for manufacturing a printed wiring board. Method package of the present invention It includes (1) a step of preparing a copper foil with a carrier having a specific surface profile, and (2) a manufacturing process of a printed wiring board using a coreless build-up method. In addition, the manufacturing process of the printed wiring board using the coreless build-up method includes (2a) a step of forming a build-up wiring layer on a carrier or an ultra-thin copper layer, (2b) a step of separating the obtained laminated body from the release layer, and ( 2c) a step of processing the obtained multilayer wiring board.

(1)附載體銅箔之準備 (1) Preparation of copper foil with carrier

本發明之方法係準備具有特定表面輪廓之附載體銅箔。附載體銅箔依序具備載體、剝離層及極薄銅層。尤其,本發明所用之附載體銅箔於載體之剝離層側之面中,起伏曲線要件之平均高度Wc與峰計數Pc之乘積的Wc×Pc為20~50μm。藉由使用載體之剝離層側之面中Wc×Pc為20~50μm之範圍內之附載體銅箔利用無芯增層法製造印刷配線板,可不需要如專利文獻2所進行之附載體銅箔之區域加工或預浸體之尺寸控制,而可有意義地防止增層配線層之形成步驟中藥液侵入載體與極薄銅層之間的界面。此外,亦可有意義地抑制無芯支撐體之分離步驟中極薄銅層之部分破裂及因此產生之缺陷(例如極薄銅層對載體之部分殘渣或極薄銅層中之針孔發生及起因於此之配線過蝕刻)。 The method of the present invention is to prepare a copper foil with a carrier having a specific surface profile. The copper foil with a carrier has a carrier, a release layer, and an ultra-thin copper layer in this order. In particular, in the surface of the copper foil with a carrier used in the present invention on the side of the release layer side of the carrier, the product of the mean height Wc of the undulation curve element and the peak count Pc Wc × Pc is 20 to 50 μm. By using a copper foil with a carrier in the range of Wc × Pc in the range of 20 to 50 μm on the side of the release layer side of the carrier, a printed wiring board is manufactured by a coreless build-up method, and the copper foil with a carrier as described in Patent Document 2 may not be required. The area processing or the size control of the prepreg can meaningfully prevent the medicinal solution from invading the interface between the carrier and the ultra-thin copper layer in the step of forming the additional wiring layer. In addition, it can also significantly inhibit the partial cracking of the ultra-thin copper layer and the resulting defects during the separation step of the coreless support (e.g., the residue of the ultra-thin copper layer on the carrier or the occurrence of pinholes in the ultra-thin copper layer and its cause). The wiring is over-etched here).

上述有利效果係藉由使用載體之剝離層側之面中Wc×Pc為20~50μm之附載體銅箔而意外地實現。其機制未必確定,但認為係如下。首先,由於起伏曲線要件 之平均高度Wc係起伏曲線要件之高度之平均值,故其值越高起伏越大,認為依此於載體與極薄銅層之間的界面藥液之浸入障壁變大。此可解釋為藥液之侵入受到起伏曲線之山妨礙之故。此外,由於峰計數Pc係輪廓曲線中每坪價長度之山之數,故其值越大山越多,可謂依此於載體與極薄銅層之間的界面藥液之浸入障壁變多。而且,認為Wc×Pc為20μm以上時,藉由Wc與Pc之相乘效果,可有意義地防止增層配線層之形成步驟中藥液侵入載體與極薄銅層之間的界面者。另一方面,Wc×Pc過大時,於無芯支撐體之分離步驟中極薄銅層容易產生部分破裂,其結果,易於發生極薄銅層對載體之部分殘渣,或極薄銅層之針孔發生及起因於其之過蝕刻發生。其原因認為係Wc×Pc越大(尤其Wc越大)則於起伏之谷部分(起因於電解時之銅析出行為)極薄銅層有變薄傾向,該薄的部分變脆弱而易於部分破裂之故。此點意外地可藉由使Wc×Pc設為50μm以下,而可有意義地抑制無芯支撐體之分離步驟中極薄銅層之部分破裂及由此產生之極薄銅層對載體之部分殘渣。總之,使Wc×Pc為20~50μm之特定範圍之上述效果,僅以表面粗糙度之控制無法實現,而係首次藉由使反映出比輪廓曲線長之波長的凹凸之源自起伏曲線之Wc與峰計數Pc之乘積而實現者。 The above-mentioned advantageous effect is achieved unexpectedly by using a copper foil with a carrier having Wc × Pc of 20 to 50 μm in the surface on the side of the release layer of the carrier. The mechanism may not be determined, but it is considered as follows. First, due to the undulating curve requirements The average height Wc is the average value of the heights of the undulating curve elements. Therefore, the higher the value, the greater the undulation. It is considered that the barrier for the immersion of the medicinal liquid at the interface between the carrier and the extremely thin copper layer becomes larger. This can be explained as the invasion of the medicinal solution is hindered by the mountain of the undulating curve. In addition, since the peak count Pc is the number of mountains per ping price length in the contour curve, the larger the value is, the more mountains there are. It can be said that there are more barriers for medicinal solution infiltration at the interface between the carrier and the ultra-thin copper layer. In addition, when Wc × Pc is 20 μm or more, it is considered that the multiplication effect of Wc and Pc can effectively prevent the medicinal solution from intruding into the interface between the carrier and the ultra-thin copper layer in the step of forming the additional wiring layer. On the other hand, when Wc × Pc is too large, the ultra-thin copper layer is likely to be partially cracked during the separation step of the coreless support. As a result, the residue of the ultra-thin copper layer on the carrier or the needle of the ultra-thin copper layer is liable to occur. Holes occur and the over-etching that results from them. The reason is that the larger the Wc × Pc (especially the larger Wc), the extremely thin copper layer tends to become thinner in the undulating valley portion (due to the copper precipitation behavior during electrolysis), and the thin portion becomes fragile and easily ruptures. The reason. At this point, by making Wc × Pc less than or equal to 50 μm, it is possible to significantly suppress the partial cracking of the ultra-thin copper layer and the partial residue of the ultra-thin copper layer on the carrier in the separation step of the coreless support. . In short, the above-mentioned effect of setting Wc × Pc to a specific range of 20 to 50 μm cannot be achieved only by the control of surface roughness, but it is the first time that Wc originated from the undulating curve by reflecting the unevenness of the wavelength longer than the contour curve This is achieved by multiplying by the peak count Pc.

基於上述觀點,載體之剝離層側之面中,Wc×Pc為20~50μm,較好為23~40μm,更好為26~33μm。且,載體之剝離層側之面中,Wc較好為0.5~1.0μm,更好 為0.55~0.95μm,又更好為0.6~0.9μm。載體之剝離層側之面中,Pc較好為22~65,更好為30~55,又更好為32~45。若為上述較佳範圍內,可更有效地防止如上述之藥液侵入界面與極薄銅層之部分破裂。 From the above viewpoint, Wc × Pc in the surface on the release layer side of the carrier is 20 to 50 μm, preferably 23 to 40 μm, and more preferably 26 to 33 μm. In addition, in the surface on the release layer side of the carrier, Wc is preferably 0.5 to 1.0 μm, and more preferably It is 0.55 to 0.95 μm, and more preferably 0.6 to 0.9 μm. In the surface of the release layer side of the carrier, Pc is preferably 22 to 65, more preferably 30 to 55, and even more preferably 32 to 45. If it is within the above-mentioned preferable range, the above-mentioned chemical liquid can be more effectively prevented from invading the interface and a part of the ultra-thin copper layer from being broken.

較好,載體之剝離層側之面中,依據JIS B0601-1994所測定之十點平均粗糙度Rz為1.5~6.5μm,更好為2.2~6.0μm,又更好為2.9~5.0μm。若為此範圍內,則確保剝離容易性,且亦有可有效防止極薄銅層之破裂之優點。又,載體之剝離層側之面之十點平均粗糙度Rz之測定典型上係對自載體銅箔剝離極薄銅層後之載體表面進行。 Preferably, the ten-point average roughness Rz of the surface on the release layer side of the carrier measured according to JIS B0601-1994 is 1.5 to 6.5 μm, more preferably 2.2 to 6.0 μm, and even more preferably 2.9 to 5.0 μm. If it is within this range, the ease of peeling is ensured, and there is also an advantage that cracking of an extremely thin copper layer can be effectively prevented. In addition, the measurement of the ten-point average roughness Rz on the side of the release layer side of the carrier is typically performed on the surface of the carrier after the ultra-thin copper layer is peeled from the carrier copper foil.

載體係支撐極薄銅層用以提高其處理性之薄或層,除了剝離層側之面中之Wc×Pc為20~50μm以外,可為習知構成。作為載體之例,舉例為鋁箔、銅箔、不銹鋼(SUS)箔、樹脂薄膜、表面經金屬包覆之樹脂薄膜、樹脂板、玻璃板等。基於易於藉由製造條件控制剝離層側之面中之Wc×Pc值之方面、及保持載體本身之耐藥品性之方面而言,較好為銅箔。銅箔可為壓延銅箔及電解銅箔之任一種,但如上述基於易於控制剝離層側之面中之Wc×Pc值之方面而言,載體較好為電解銅箔。載體厚度典型上為250μm以下,較好為12μm~200μm。 The carrier is a thin layer or layer that supports an ultra-thin copper layer to improve its handleability, and may have a conventional structure except that Wc × Pc in the surface on the side of the release layer is 20 to 50 μm. Examples of the carrier include aluminum foil, copper foil, stainless steel (SUS) foil, resin film, metal-coated resin film, resin plate, glass plate, and the like. A copper foil is preferable because it is easy to control the Wc × Pc value in the surface on the side of the release layer by manufacturing conditions, and to maintain the chemical resistance of the carrier itself. The copper foil may be either a rolled copper foil or an electrolytic copper foil. However, as described above, the carrier is preferably an electrolytic copper foil in terms of easily controlling the Wc × Pc value in the surface on the side of the release layer. The thickness of the carrier is typically 250 μm or less, and preferably 12 μm to 200 μm.

載體表面之上述範圍內之Wc、Pc及Rz之實現,較好藉由如下進行:於例如載體為電解銅箔時,使電解液(例如硫酸酸性硫酸銅溶液)進行活性碳處理去除電 解液中之殘留添加劑後,於活性碳處理後之電解液中新添加膠原蛋白或明膠等之添加劑以習知條件進行電解,製造厚約10~35μm左右之電解銅箔,將所得電解銅箔之析出面(電解液面)作為剝離層側之面。藉由此電解析出製程之粗面形成,作為將載體表面調整為各種輪廓之方法特別有效。然而,粗面形成之方法不限定於上述方法,除此以外,亦可採用化學蝕刻之形成、噴射處理等之物理蝕刻等。 The realization of Wc, Pc, and Rz in the above range on the surface of the carrier is preferably performed as follows: When the carrier is, for example, electrolytic copper foil, the electrolytic solution (such as sulfuric acid and copper sulfate solution) is subjected to activated carbon treatment to remove electricity. After the remaining additives in the solution are decomposed, an electrolytic solution treated with activated carbon is newly added with an additive such as collagen or gelatin and electrolyzed under conventional conditions to produce an electrolytic copper foil having a thickness of about 10 to 35 μm. The precipitation surface (electrolyte surface) is the surface on the release layer side. The formation of the rough surface of the process by this electrical analysis is particularly effective as a method of adjusting the surface of the carrier to various contours. However, the method for forming the rough surface is not limited to the above-mentioned method. In addition, physical etching such as chemical etching formation, spray treatment, and the like may be used.

極薄銅層若為印刷配線板製造用之附載體銅箔所採用之習知構成即可而未特別限制。可為例如極薄銅層藉由無電解銅鍍敷法及電解銅鍍敷法等之濕式成膜法、濺鍍及化學蒸鍍等之乾式成膜法、或該等之組合而形成者。極薄銅層之較佳厚度為0.1~10.0。例如作為無芯支撐體表面上形成之配線層,為了進行線/間隔=25μm以下/25μm以下之微細電路形成,極薄銅層之厚度特佳為0.2~7.0μm。 The ultra-thin copper layer is not particularly limited as long as it has a conventional structure used for a copper foil with a carrier for manufacturing printed wiring boards. For example, the ultra-thin copper layer may be formed by a wet film formation method such as electroless copper plating method and electrolytic copper plating method, a dry film formation method such as sputtering and chemical vapor deposition, or a combination thereof. . The preferred thickness of the ultra-thin copper layer is 0.1 to 10.0. For example, as a wiring layer formed on the surface of a coreless support, in order to form a fine circuit with a line / space = 25 μm or less / 25 μm or less, the thickness of the ultra-thin copper layer is particularly preferably 0.2 to 7.0 μm.

剝離層係減弱載體之剝離強度、確保該強度之安定性、進而具有於高溫之加壓成形時抑制載體與極薄銅層之間引起之相互擴散之功能之層。剝離層一般係形成於載體之一面上,但亦可形成於兩面。剝離層可為有機剝離層及無機剝離層之任一者。有機剝離層所用之有機成分之例舉例為含氮有機化合物、含硫有機化合物、羧酸等。含氮有機化合物之例舉例為三唑化合物、咪唑化合物等,其中三唑化合物基於剝離性易於安定之方面而言較佳。作 為三唑化合物之例,舉例為1,2,3-苯并三唑、羧基苯并三唑、N’,N’-雙(苯并三唑基甲基)脲、1H-1,2,4-三唑及3-胺基-1H-1,2,4-三唑等。含硫有機化合物之例舉例為巰基苯并噻唑、硫代氰尿酸、2-苯并咪唑硫醇等。作為羧酸之例舉例為單羧酸、二羧酸等。另一方面,作為無機剝離層所用之無機成分之例舉例為Ni、Mo、Co、Cr、Fe、Ti、W、P、Zn、鉻酸鹽處理膜等。又,剝離層之形成係於載體之至少一表面接觸含剝離層成分之溶液,使剝離層成分固定於載體表面等而進行即可。使載體接觸含剝離層成分之溶液時,該接觸只要藉由浸漬於含剝離層成分之溶液中、噴霧含剝離層成分之溶液、流下含剝離層成分之溶液等進行即可。此外,亦可採用以蒸鍍或濺鍍等之氣相法使碳等之剝離層成分進行被膜形成之方法。該等中,尤其基於可使剝離層本身薄層化、藥液朝載體與極薄銅層的界面侵入效果優異者之方面、對於前述載體之剝離層側表面使載體鋼製造後之表面輪廓之變化極小化之步驟設計上有利之方面等而言,剝離層較好為有機剝離層。且,剝離層成分對載體表面之固定係藉由吸附或乾燥含剝離層成分之溶液、電鍍含剝離層成分之溶液中之剝離層成分等而進行即可。剝離層厚度典型上為1nm~1μm,較好為5nm~500nm,更好為6nm~100nm。 The peeling layer is a layer that weakens the peeling strength of the carrier, ensures the stability of the strength, and further has a function of suppressing mutual diffusion caused between the carrier and the ultra-thin copper layer during high-temperature pressure forming. The release layer is generally formed on one side of the carrier, but may be formed on both sides. The release layer may be any of an organic release layer and an inorganic release layer. Examples of the organic component used in the organic release layer include nitrogen-containing organic compounds, sulfur-containing organic compounds, carboxylic acids, and the like. Examples of the nitrogen-containing organic compound are a triazole compound, an imidazole compound, and the like. Among them, the triazole compound is preferable because it is easy to stabilize the peelability. Make Examples of triazole compounds are 1,2,3-benzotriazole, carboxybenzotriazole, N ', N'-bis (benzotriazolylmethyl) urea, 1H-1,2, 4-triazole and 3-amino-1H-1,2,4-triazole. Examples of the sulfur-containing organic compound are mercaptobenzothiazole, thiocyanuric acid, 2-benzimidazolethiol, and the like. Examples of the carboxylic acid include a monocarboxylic acid and a dicarboxylic acid. On the other hand, examples of the inorganic component used in the inorganic release layer include Ni, Mo, Co, Cr, Fe, Ti, W, P, Zn, and a chromate-treated film. The formation of the release layer may be performed by contacting at least one surface of the carrier with a solution containing a release layer component, and fixing the release layer component to the surface of the carrier. When the carrier is brought into contact with the solution containing the release layer component, the contact may be performed by immersing in the solution containing the release layer component, spraying the solution containing the release layer component, flowing down the solution containing the release layer component, or the like. In addition, a method of forming a film of a peeling layer component such as carbon by a vapor phase method such as vapor deposition or sputtering may also be adopted. Among them, especially based on the point that the peeling layer itself can be made thinner, and the chemical liquid has an excellent invasion effect at the interface between the carrier and the ultra-thin copper layer, the surface profile of the carrier steel after the carrier steel is manufactured on the side surface of the peeling layer of the carrier In terms of advantageous design of the step of minimizing change, etc., the release layer is preferably an organic release layer. In addition, the fixing of the release layer component to the carrier surface may be performed by adsorbing or drying the release layer component-containing solution, plating the release layer component in the release layer component-containing solution, or the like. The thickness of the release layer is typically 1 nm to 1 μm, preferably 5 nm to 500 nm, and more preferably 6 nm to 100 nm.

依期望,於剝離層與載體及/或極薄銅層之間亦可設有其他功能層。作為此種其他功能層之例舉例為輔助金屬層。輔助金屬層較好由鎳及/或鈷所成。藉由於 載體之表面側及/或極薄銅層之表面側形成此種輔助金屬層,可抑制於高溫或長時間熱加壓成形時於載體與極薄銅層之間引起之相互擴散,擔保載體之剝離強度之安定性。輔助金屬層之厚度較好為0.001~3μm。 As desired, other functional layers may be provided between the release layer and the carrier and / or the ultra-thin copper layer. An example of such another functional layer is an auxiliary metal layer. The auxiliary metal layer is preferably made of nickel and / or cobalt. By The formation of such an auxiliary metal layer on the surface side of the carrier and / or the surface side of the ultra-thin copper layer can suppress the mutual diffusion caused between the carrier and the ultra-thin copper layer during high-temperature or long-term hot-press forming, and guarantee the carrier's Stability of peel strength. The thickness of the auxiliary metal layer is preferably 0.001 to 3 μm.

依期望,亦可對極薄銅層施以防銹處理。防銹處理較好包含使用鋅之鍍敷處理。使用鋅之鍍敷處理可為鋅鍍敷處理及鋅合金鍍敷處理之任一者,鋅合金鍍敷處理特佳為鋅-鎳合金處理。鋅-鎳合金處理只要為包含Ni及Zn之鍍敷處理即可,亦可進而含有Sn、Cr、Co等之其他元素。鋅-鎳合金鍍敷中之Ni/Zn附著比例,以質量比計,較好為1.2~10,更好為2~7,又更好為2.7~4。且,防銹處理較好進而包含鉻酸鹽處理,該鉻酸鹽處理更好於使用鋅之鍍敷處理後,於含鋅之鍍敷表面進行。如此可進一步提高防銹性。特佳之防銹處理係組合鋅-鎳合金鍍敷處理與隨後之鉻酸鹽處理。 If desired, an anti-rust treatment can also be applied to the very thin copper layer. The antirust treatment preferably includes a plating treatment using zinc. The plating treatment using zinc may be any one of a zinc plating treatment and a zinc alloy plating treatment, and the zinc alloy plating treatment is particularly preferably a zinc-nickel alloy treatment. The zinc-nickel alloy treatment may be a plating treatment containing Ni and Zn, and may further contain other elements such as Sn, Cr, and Co. The Ni / Zn adhesion ratio in zinc-nickel alloy plating, based on mass ratio, is preferably 1.2 to 10, more preferably 2 to 7, and even more preferably 2.7 to 4. In addition, the rust prevention treatment preferably further includes a chromate treatment, which is more preferably performed on a zinc-containing plating surface after a zinc plating treatment. This can further improve rust prevention. A particularly good antirust treatment is a combination of zinc-nickel alloy plating and subsequent chromate treatment.

依期望,亦可於極薄銅層表面施以矽烷偶合劑處理,形成矽烷偶合劑層。藉此可提高耐濕性、耐藥品性及與樹脂層等之密著性等。矽烷偶合劑層可藉由適當稀釋矽烷偶合劑並塗佈、乾燥而形成。作為矽烷偶合劑之例舉例為4-縮水甘油基丁基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷等之環氧官能性矽烷偶合劑,或γ-胺基丙基三甲氧基矽烷、N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷、N-苯基-γ-胺基丙基三甲氧基矽烷等 之胺基官能性矽烷偶合劑,或γ-巰基丙基三甲氧基矽烷等之巰官能性矽烷偶合劑或乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷等之烯烴官能性矽烷偶合劑,或γ-甲基丙烯醯氧基丙基三甲氧基矽烷等之丙烯醯官能性矽烷偶合劑,或咪唑矽烷等之咪唑官能性矽烷偶合劑,或三嗪矽烷等之三嗪官能性矽烷偶合劑等。 If desired, the surface of the ultra-thin copper layer may also be treated with a silane coupling agent to form a silane coupling agent layer. This can improve moisture resistance, chemical resistance, adhesion to a resin layer, and the like. The silane coupling agent layer can be formed by appropriately diluting the silane coupling agent, coating, and drying. Examples of the silane coupling agent include epoxy-functional silane coupling agents such as 4-glycidylbutyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-aminopropyltrimethyl Oxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-3- (4- (3-aminopropyloxy) butoxy) propyl-3-amine Propyltrimethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, etc. Amine-functional silane coupling agent, or thiol-functional silane coupling agent such as γ-mercaptopropyltrimethoxysilane, or olefin-functional silane coupling agent such as vinyltrimethoxysilane, vinylphenyltrimethoxysilane, etc. Mixtures, or propylene-functional silane coupling agents such as γ-methacryl methoxypropyltrimethoxysilane, or imidazole-functional silane coupling agents such as imidazolium silane, or triazine-functional silanes such as triazine silane Coupling agent, etc.

(2)利用無芯增層法之印刷配線板之製造 (2) Manufacturing of printed wiring boards using coreless build-up method

本發明之方法中之印刷配線板之製造係藉由使用上述附載體銅箔之無芯增層法進行。無芯增層法之較佳樣態舉例為埋入電路形成法與載體/減去加工法等。各方法具體如下。 The production of the printed wiring board in the method of the present invention is performed by the coreless build-up method using the above-mentioned copper foil with a carrier. Examples of preferred forms of the coreless build-up method include a buried circuit formation method and a carrier / subtraction processing method. Each method is as follows.

埋入電路形成法為經過下述而進行之方法:由載體與支撐體(例如預浸體)之積層製作支撐體、於極薄銅層上形成圖型電路、形成增層配線層、剝離支撐體及極薄銅層上之淹沒蝕刻(flush etching)。圖1A及1B中顯示該製造法之步驟圖。又,圖1A及1B所示之樣態係用以簡化說明而描繪為於無芯支撐體18之單面上設置附載體銅箔10形成增層配線層42,但期望對於無芯支撐體18之兩面設置附載體銅箔10之該兩面形成增層配線層42。圖1A及1B所示之例中,首先準備依序具備載體12、剝離層14及極薄銅層16之附載體銅箔10,將附載體銅箔10以載體12側積層於預浸體等之無芯支撐體18上。其次,於極薄銅層16上形成光阻劑圖型20,經過圖 型鍍敷(銅電鍍)22之形成及光阻劑圖型20之剝離,形成配線圖型24。接著,對圖型鍍敷實施粗化處理等之積層前處理作成第1配線層26。其次,如圖1B所示,成為應形成增層配線層42之配線圖型24埋入絕緣層28之構造。於該積層步驟,積層絕緣層28及附載體銅箔30(具備載體32、剝離層34及極薄銅層36),剝離載體32,且藉由二氧化碳氣體雷射對極薄銅層36及其正下方之絕緣層28進行雷射加工。接著,藉由光阻劑加工、無電解銅鍍敷、電解銅鍍敷、光阻劑剝離及淹沒蝕刻等進行圖型化,形成第2配線層38,該圖型化根據需要重複進行直至形成第n配線層40(n為2以上之整數)。接著,將無芯支撐體18與載體12一起剝離,藉由淹沒蝕刻去除於配線圖型24表面露出之極薄銅層16,獲得特定之埋入電路圖型。可獲得具備如此特定埋入電路圖型之印刷配線板46。本樣態中,由於無芯支撐體18與載體12一起剝離時極薄銅層16不易破裂,故可有效地避免極薄銅層16中之針孔形成及因此於淹沒蝕刻時之配線圖型24之過蝕刻之缺點。 The embedded circuit formation method is performed by: forming a support body by laminating a carrier and a support body (such as a prepreg body), forming a pattern circuit on an ultra-thin copper layer, forming an additional wiring layer, and peeling the support Flush etching on the body and very thin copper layers. The steps of the manufacturing method are shown in FIGS. 1A and 1B. The state shown in FIGS. 1A and 1B is drawn to simplify the description. The copper foil 10 with a carrier is provided on one side of the coreless support 18 to form an additional wiring layer 42. However, it is desirable for the coreless support 18 The two sides of the copper foil 10 with a carrier are provided on both sides to form the build-up wiring layer 42. In the example shown in FIGS. 1A and 1B, firstly, a copper foil 10 with a carrier having a carrier 12, a release layer 14, and an ultra-thin copper layer 16 is prepared in this order. The copper foil 10 with a carrier is laminated on the carrier 12 side to a prepreg, etc. On the coreless support 18. Next, a photoresist pattern 20 is formed on the ultra-thin copper layer 16 The patterning (copper plating) 22 is formed and the resist pattern 20 is peeled off to form a wiring pattern 24. Next, the first wiring layer 26 is formed by performing a pre-lamination treatment such as roughening treatment on the pattern plating. Next, as shown in FIG. 1B, the wiring pattern 24 in which the build-up wiring layer 42 is to be formed is embedded in the insulating layer 28. In this lamination step, the insulating layer 28 and the copper foil 30 with a carrier (including the carrier 32, the peeling layer 34 and the ultra-thin copper layer 36) are laminated, the carrier 32 is peeled off, and the ultra-thin copper layer 36 and The insulating layer 28 directly below is subjected to laser processing. Next, patterning is performed by photoresist processing, electroless copper plating, electrolytic copper plating, photoresist stripping, and submerged etching to form a second wiring layer 38. This patterning is repeated as needed until formation The n-th wiring layer 40 (n is an integer of 2 or more). Next, the coreless support 18 and the carrier 12 are peeled off together, and the ultra-thin copper layer 16 exposed on the surface of the wiring pattern 24 is removed by submerged etching to obtain a specific embedded circuit pattern. A printed wiring board 46 having such a specific embedded circuit pattern can be obtained. In this aspect, since the extremely thin copper layer 16 is not easily broken when the coreless support 18 and the carrier 12 are peeled together, the pinhole formation in the extremely thin copper layer 16 and the wiring pattern during submerged etching can be effectively avoided. The disadvantage of over-etching is 24.

載體/減去加工法係經過下述而進行之方法:由載體與預浸體之積層製作支撐體、於載體上製作增層配線層、剝離支撐體、載體之減去加工(亦即阻劑形成、蝕刻及阻劑剝離)。圖2A及2B中顯示該製造法之步驟圖(該圖中為便於說明,對同一名稱之構件使用與圖1A及1B相同之符號)。又,圖2A及2B中所示之樣態為了簡 化說明,描繪為於無芯支撐體18之單面上設置附載體銅箔10形成增層配線層42,但期望對於無芯支撐體18之兩面設置附載體銅箔10之該兩面形成增層配線層42。圖2A及2B所示之例中,首先,準備依序具備載體12、剝離層14及極薄銅層16之附載體銅箔10,將附載體銅箔10以極薄銅層16側積層於預浸體等之無芯支撐體18上。其次,除了尚未進行第1配線層26之形成以外,與圖1A及1B所示之例同樣,介隔絕緣層28形成圖型化之第2配線層38,該圖型化根據需要重複進行積層至第(n-1)配線層(n為2以上之整數)後,進行用以形成第n配線層40(n為2以上之整數)之面板鍍敷。接著,將無芯支撐體18與極薄銅層16一起剝離,獲得形成特定配線圖型之前階段之含增層配線層之多層配線板44。於所得多層配線板44之兩面(亦即第n配線層40之表面與載體12之表面)形成蝕刻阻劑21之圖型。如此,對於由蝕刻阻劑21遮蔽之多層配線板44進行銅蝕刻極蝕刻阻劑21之剝離,於多層配線板44之與第n配線層40相反側之表面形成第1配線層26。可獲得具備特定之配線圖型之印刷配線板46。本樣態中,由於無芯支撐體18與極薄銅層16一起剝離時極薄銅層16不易破裂,故可有效地避免極薄銅層對載體之部分殘渣。因此,可不需要為了去除部分殘渣之洗淨步驟或化學蝕刻等之追加步驟,可提高製造效率或提高第1配線層26之厚度精度。 The carrier / subtraction processing method is performed by the following methods: making a support from the laminate of the carrier and the prepreg, making an additional wiring layer on the carrier, peeling the support, and subtracting the carrier (that is, a resist) Formation, etching and resist stripping). The steps of the manufacturing method are shown in FIGS. 2A and 2B (for ease of illustration, the same symbols are used for components with the same name as in FIGS. 1A and 1B). 2A and 2B are shown for simplicity. It is illustrated that the copper foil 10 with a carrier is provided on one side of the coreless support 18 to form an additional wiring layer 42, but it is desirable to provide the copper foil 10 with a carrier on both sides of the coreless support 18 to form a buildup. Wiring layer 42. In the example shown in FIGS. 2A and 2B, first, a copper foil 10 with a carrier having a carrier 12, a release layer 14, and an ultra-thin copper layer 16 in order are prepared, and the copper foil 10 with a carrier is laminated on the side of the ultra-thin copper layer 16 on On a coreless support 18 such as a prepreg. Next, except that the formation of the first wiring layer 26 has not yet been performed, as in the example shown in FIGS. 1A and 1B, the insulating edge layer 28 forms a patterned second wiring layer 38, and the patterning is repeated as necessary. After the (n-1) th wiring layer (n is an integer of 2 or more), panel plating is performed to form the nth wiring layer 40 (n is an integer of 2 or more). Next, the coreless support 18 is peeled off together with the ultra-thin copper layer 16 to obtain a multilayer wiring board 44 including an additional wiring layer at a stage before forming a specific wiring pattern. A pattern of the etching resist 21 is formed on both surfaces of the obtained multilayer wiring board 44 (that is, the surface of the n-th wiring layer 40 and the surface of the carrier 12). In this way, the multilayer wiring board 44 shielded by the etching resist 21 is stripped of the copper etching electrode etching resist 21, and the first wiring layer 26 is formed on the surface of the multilayer wiring board 44 on the side opposite to the n-th wiring layer 40. A printed wiring board 46 having a specific wiring pattern can be obtained. In this aspect, since the ultra-thin copper layer 16 is not easily broken when the coreless support 18 is peeled off together with the ultra-thin copper layer 16, a part of the residue of the ultra-thin copper layer on the carrier can be effectively avoided. Therefore, an additional step such as a cleaning step to remove a part of the residue or a chemical etching can be eliminated, and the manufacturing efficiency can be improved or the thickness accuracy of the first wiring layer 26 can be improved.

上述任一樣態中,利用無芯增層法之印刷配 線板之製造係藉由下述步驟進行:(2a)於載體12或極薄銅層16上形成增層配線層42,製作附增層配線層之積層體,(2b)於剝離層14分離附增層配線層之積層體獲得含增層配線層42之多層配線板44後,(2c)加工多層配線板44獲得印刷配線板46。且,如上述,本發明之方法於增層配線層42形成前,當然亦可包含於支撐體18(例如預浸體或樹脂薄片等之絕緣樹脂基材)之單面或雙面上積層附載體銅箔10而形成積層體之步驟。所謂預浸體係於合成樹脂板、玻璃板、玻璃織布、玻璃不織布、紙等之基材中含浸合成樹脂而成之複合材料之總稱。含浸於預浸體中之絕緣性樹脂之較佳例舉例為環氧樹脂、氰酸酯樹脂、雙馬來醯亞胺樹脂(BT樹脂)、聚苯醚樹脂、酚樹脂等。且,作為構成樹脂薄片之絕緣性樹脂之例,舉例為環氧樹脂、聚醯亞胺樹脂、聚酯樹脂等之絕緣樹脂。以下針對(2a)~(2c)之各步驟加以說明。 In any of the above states, the printing layout using the coreless build-up method The manufacturing of the wire board is performed by the following steps: (2a) forming an additional wiring layer 42 on the carrier 12 or the ultra-thin copper layer 16 to produce a laminate with the additional wiring layer, and (2b) separating the release layer 14 After the multilayer body with the build-up wiring layer is obtained to obtain the multilayer wiring board 44 including the build-up wiring layer 42, (2c) the multilayer wiring board 44 is processed to obtain a printed wiring board 46. In addition, as described above, the method of the present invention may, of course, be included on one or both sides of the support 18 (such as an insulating resin substrate such as a prepreg or a resin sheet) before forming the build-up wiring layer 42. A step of forming a laminated body by supporting the copper foil 10. The so-called prepreg system is a general term for composite materials in which synthetic resins are impregnated into substrates such as synthetic resin plates, glass plates, glass woven fabrics, glass nonwoven fabrics, and paper. Preferred examples of the insulating resin impregnated in the prepreg are epoxy resin, cyanate resin, bismaleimide resin (BT resin), polyphenylene ether resin, phenol resin, and the like. In addition, examples of the insulating resin constituting the resin sheet include insulating resins such as epoxy resin, polyimide resin, and polyester resin. Each step of (2a) to (2c) will be described below.

(2a)增層配線層之形成 (2a) Formation of build-up wiring layer

於載體12或極薄銅層16上形成增層配線層42,製作附增層配線層之積層體。於如圖1A及1B所示般之埋入電路形成法時,於極薄銅層16上形成增層配線層42。例如除了於極薄銅層16上已形成之第1配線層26以外,依序形成絕緣膜28及第2配線層38作成增層配線層42。第2配線層38以後之增層之層之形成方法的工法並未特別限制,可使用減去法、MSAP(改質半添加製程) 法、SAP(半添加)法、全添加法等。例如同時以加壓加工貼合樹脂層及以銅箔為代表之金屬箔時,組合通孔形成及面板鍍敷等之層間導通手段之形成,蝕刻加工該面板鍍敷層及金屬箔,可形成配線圖型。且,於極薄銅層16之表面藉由加壓或積層僅貼合樹脂層時,亦可於其表面藉半添加法形成配線。另一方面,如圖2A及2B所示般之載體/減去加工法時,於載體12上形成增層配線層42。例如,於載體12上依序形成絕緣層28及第2配線層38成為增層配線層42。 An additional wiring layer 42 is formed on the carrier 12 or the ultra-thin copper layer 16 to produce a laminated body with the additional wiring layer. In the buried circuit formation method as shown in FIGS. 1A and 1B, an additional wiring layer 42 is formed on the ultra-thin copper layer 16. For example, in addition to the first wiring layer 26 already formed on the ultra-thin copper layer 16, an insulating film 28 and a second wiring layer 38 are sequentially formed to form an additional wiring layer 42. The method of forming the additional layers after the second wiring layer 38 is not particularly limited, and the subtractive method and MSAP (modified semi-additive process) can be used. Method, SAP (semi-additive) method, full-additive method, etc. For example, when laminating a resin layer and a metal foil typified by copper foil at the same time by pressure, the formation of interlayer conduction means such as through-hole formation and panel plating is combined, and the panel plating layer and metal foil can be formed by etching. Wiring pattern. In addition, when only the resin layer is bonded to the surface of the ultra-thin copper layer 16 by pressure or lamination, wiring can also be formed on the surface by a semi-additive method. On the other hand, in the carrier / subtraction processing method as shown in FIGS. 2A and 2B, the build-up wiring layer 42 is formed on the carrier 12. For example, the insulating layer 28 and the second wiring layer 38 are sequentially formed on the carrier 12 to form the build-up wiring layer 42.

形成增層配線層之步驟較好包含使用鉻酸鹽溶液及過錳酸鹽溶液之至少任一者之去膠渣步驟作為將藉雷射等形成通孔時產生之通孔底部之樹脂殘渣(膠渣)去除之處理。去膠渣步驟係依序進行膨潤處理、鉻酸處理或過錳酸處理、及還原處理之處理的步驟,採用習知之濕式製程。依據本發明之方法,可有效地防止該去膠渣步驟中之鉻酸鹽溶液或過錳酸鹽溶液進入載體與極薄銅層間的界面。作為鉻酸鹽之例舉例為鉻酸鉀。作為過錳酸鹽之例舉例為過錳酸鈉、過錳酸鉀等。尤其,基於去膠渣處理液之環境負荷物質之排出減低、電解再生性等之方面,較好使用過錳酸鹽。 The step of forming the build-up wiring layer preferably includes a step of removing the dross using at least one of a chromate solution and a permanganate solution as a resin residue at the bottom of the via hole generated when a via hole is formed by laser or the like ( Rubber slag) removal. The slag removal step is a step of sequentially performing a swelling treatment, a chromic acid treatment or a permanganic acid treatment, and a reduction treatment, and adopts a conventional wet process. According to the method of the present invention, the chromate solution or the permanganate solution in the step of removing the slag can be effectively prevented from entering the interface between the carrier and the extremely thin copper layer. An example of a chromate is potassium chromate. Examples of the permanganate include sodium permanganate and potassium permanganate. In particular, permanganate is preferably used in terms of reducing the discharge of environmentally-loaded substances from the sizing treatment liquid, electrolytic reproducibility, and the like.

根據需要重複上述步驟,獲得附增層配線層之層合體。該步驟中,較好使樹脂層與包含配線圖型之配線層交替積層配置形成增層配線層,直至形成第n配線層40(n為2以上之整數)獲得附增層配線層之積層體。該 步驟之重複只要進行至形成期望層數之增層配線層即可。以該階段,根據需要,亦可於外層面形成焊料阻劑或栓柱等之安裝用凸塊等。又,增層配線層之最外層面亦可於隨後之多層配線板之加工步驟(2c)形成外層配線圖型。 Repeat the above steps as needed to obtain a laminate with an additional wiring layer. In this step, it is preferable that the resin layer and the wiring layer including the wiring pattern are alternately stacked to form an additional wiring layer, until the n-th wiring layer 40 (n is an integer of 2 or more) is formed to obtain a laminated body with an additional wiring layer. . The It is only necessary to repeat the steps until a build-up wiring layer having a desired number of layers is formed. At this stage, if necessary, bumps for mounting such as solder resists or studs can also be formed on the outer layer. In addition, the outermost layer of the build-up wiring layer can also be used to form an outer layer wiring pattern in the subsequent processing step (2c) of the multilayer wiring board.

(2b)附增層配線層之積層體之分離 (2b) Separation of laminates with additional wiring layers

於剝離層14分離附增層配線層之積層體獲得包含增層配線層42之多層配線板44。該分離可藉由剝落極薄銅層16及/或載體12而進行。 The multilayer body with the build-up wiring layer is separated from the release layer 14 to obtain a multilayer wiring board 44 including the build-up wiring layer 42. The separation can be performed by peeling off the extremely thin copper layer 16 and / or the carrier 12.

(2c)多層配線板之加工 (2c) Processing of multilayer wiring boards

加工多層配線板44獲得印刷配線板46。於該步驟,使用藉由上述分離步驟所得之多層配線板44,加工成期望之多層印刷配線板。由多層配線板44加工成多層印刷配線板46之方法只要採用習知各種方法即可。例如蝕刻位於多層配線板44之外層之載體12或極薄銅層16形成外層電路配線,可獲得多層印刷配線板。且,亦可完全蝕刻去除位於多層配線板44外層之載體12或極薄銅層16,直接以該狀態作為多層印刷板46使用。且,亦可於位於多層配線板44之外層之載體12或極薄銅層16之外表面形成光阻劑層進行電解銅鍍敷,剝離光阻劑後,以淹沒蝕刻等之半添加法等於載體12或極薄銅層16直接形成外層電路等,作成多層印刷配線板。進而,亦可完全蝕刻去除位於多層配線板44外層之載體12或極薄銅層16, 並且軟蝕刻第1配線層26,獲得形成有凹部之第1配線層26,將其作為安裝用墊片。 The multilayer wiring board 44 is processed to obtain a printed wiring board 46. In this step, the multilayer wiring board 44 obtained by the above-mentioned separation step is used to process a desired multilayer printed wiring board. As the method for processing the multilayer wiring board 44 into the multilayer printed wiring board 46, various methods may be used. For example, the carrier 12 or the ultra-thin copper layer 16 located on the outer layer of the multilayer wiring board 44 is etched to form outer-layer circuit wiring, and a multilayer printed wiring board can be obtained. Moreover, the carrier 12 or the ultra-thin copper layer 16 located on the outer layer of the multilayer wiring board 44 can be completely etched and removed, and the multilayer printed circuit board 46 can be directly used in this state. In addition, a photoresist layer can be formed on the outer surface of the carrier 12 or the ultra-thin copper layer 16 on the outer layer of the multilayer wiring board 44 for electrolytic copper plating. After the photoresist is peeled off, the semi-additive method such as submerged etching is equal to The carrier 12 or the ultra-thin copper layer 16 directly forms an outer layer circuit or the like, and forms a multilayer printed wiring board. Furthermore, the carrier 12 or the ultra-thin copper layer 16 located on the outer layer of the multilayer wiring board 44 can be completely etched away. Then, the first wiring layer 26 is soft-etched to obtain the first wiring layer 26 having a recessed portion, which is used as a mounting pad.

[實施例] [Example]

本發明藉由以下之例具體加以說明。 The present invention is specifically explained by the following examples.

例1~7 Examples 1 ~ 7

於載體之析出面側依序形成剝離層及極薄銅層後,進行防銹處理及矽烷偶合劑處理,製作附載體銅箔。接著針對所得附載體銅箔進行各種評價。具體順序如以下。 A peeling layer and an ultra-thin copper layer were sequentially formed on the precipitation surface side of the carrier, and then subjected to a rust prevention treatment and a silane coupling agent treatment to produce a copper foil with a carrier. Then, various evaluations were performed about the obtained copper foil with a carrier. The specific sequence is as follows.

(1)載體之製作 (1) Production of carrier

陰極係使用算術平均粗糙度Ra(根據JIS B0601-2001)為0.20μm之鈦製旋轉電極,陽極係使用DSA(尺寸安定性陽極),作為電解液係使用以下表1所示組成之硫酸酸性硫酸銅溶液以表1所示條件進行電解製箔,獲得表1所示厚度之電解銅箔作為載體。 The cathode system uses a titanium rotating electrode with an arithmetic mean roughness Ra (according to JIS B0601-2001) of 0.20 μm, the anode system uses DSA (Dimensionally Stable Anode), and the electrolyte system uses sulfuric acid acid sulfuric acid having the composition shown in Table 1 below. The copper solution was electrolytically produced under the conditions shown in Table 1 to obtain an electrolytic copper foil having a thickness shown in Table 1 as a carrier.

(2)剝離層之形成 (2) Formation of peeling layer

經酸洗處理之載體之析出面於CBTA(羧基苯并三唑)濃度1g/L、硫酸濃度150g/L及銅濃度10g/L之CBTA水溶液中,於液溫30℃浸漬30秒,使CBTA成分吸附於載體之電極面。如此,於載體之電極面形成CBTA層作為有機剝離層。該有機剝離層以面積重量換算法測定後,厚度為8nm。 The precipitated surface of the pickled carrier was immersed in a CBTA (carboxybenzobenzotriazole) concentration of 1 g / L, a sulfuric acid concentration of 150 g / L, and a copper concentration of 10 g / L in an aqueous solution of CBTA at a temperature of 30 ° C for 30 seconds to make CBTA The components are adsorbed on the electrode surface of the carrier. In this way, a CBTA layer is formed on the electrode surface of the carrier as an organic release layer. The thickness of the organic release layer was 8 nm after it was measured by an area weight conversion algorithm.

(3)輔助金屬層之形成 (3) Formation of auxiliary metal layer

將形成有機剝離層之載體浸漬於使用硫酸鎳製作之鎳濃度20g/L之溶液中,以液溫45℃、pH3、電流密度5A/dm2之條件,於有機剝離層上附著相當於厚度0.01μm之附著量之鎳。如此於有機剝離層上形成鎳層作為輔助金屬層。 The carrier forming the organic peeling layer was immersed in a solution having a nickel concentration of 20 g / L made of nickel sulfate, and adhered to the organic peeling layer at a thickness of 0.01 at a liquid temperature of 45 ° C., a pH of 3, and a current density of 5 A / dm 2 . μm adhesion amount of nickel. In this way, a nickel layer was formed on the organic release layer as an auxiliary metal layer.

(4)極薄銅層之形成 (4) Formation of extremely thin copper layer

形成輔助金屬層之載體浸漬於以下所示組成之銅溶液中,以溶液溫度50℃、電流密度5~30A/dm2電解,於輔助金屬層上形成厚度3μm之極薄銅層。 The carrier forming the auxiliary metal layer is immersed in a copper solution of the composition shown below, and is electrolyzed at a solution temperature of 50 ° C. and a current density of 5 to 30 A / dm 2 to form an extremely thin copper layer with a thickness of 3 μm on the auxiliary metal layer.

<溶液組成> <Solution composition>

-銅濃度:60g/L -Copper concentration: 60g / L

-硫酸濃度:200g/L -Sulfuric acid concentration: 200g / L

(5)粗化處理 (5) Roughening

對如此形成之極薄銅層表面進行粗化處理。該粗化處理係由下述步驟構成:於極薄銅層上析出附著微細銅粒之燒鍍步驟,及為了防止該微細銅粒之脫落之澆鍍步驟。燒鍍步驟係使用含銅濃度10g/L及硫酸濃度120g/L之酸性硫酸銅溶液,以液溫25℃、電流密度15A/dm2進行粗化處理。隨後之澆鍍步驟係使用含銅濃度70g/L及硫酸濃度120g/L之酸性硫酸銅溶液,以液溫40℃及電流密度15A/dm2之平滑鍍敷條件進行電鍍。 The surface of the extremely thin copper layer thus formed is roughened. This roughening treatment is constituted by the following steps: a firing step of depositing fine copper particles on the ultra-thin copper layer, and a plating step to prevent the fine copper particles from falling off. The firing step is a roughening treatment using an acidic copper sulfate solution containing a copper concentration of 10 g / L and a sulfuric acid concentration of 120 g / L at a liquid temperature of 25 ° C and a current density of 15 A / dm 2 . The subsequent plating step was performed using an acidic copper sulfate solution containing a copper concentration of 70 g / L and a sulfuric acid concentration of 120 g / L under smooth plating conditions at a liquid temperature of 40 ° C and a current density of 15 A / dm 2 .

(6)防銹處理 (6) Anti-rust treatment

於所得附載體銅箔之粗化處理層表面進行由鋅-鎳合金鍍敷處理及鉻酸鹽處理所成之防銹處理。首先,使用鋅濃度0.2g/L、鎳濃度2g/L及焦磷酸鉀濃度300g/L之電解液,以液溫40℃、電流密度0.5A/dm2之條件對粗化處理 層及載體之表面進行鋅-鎳合金鍍敷處理。其此,使用鉻酸3g/L水溶液,以pH10、電流密度5A/dm2之條件,於進行鋅-鎳合金鍍敷處理之表面進行鉻酸鹽處理。 The surface of the roughened layer of the obtained copper foil with a carrier was subjected to a rust prevention treatment formed by a zinc-nickel alloy plating treatment and a chromate treatment. First, an electrolytic solution having a zinc concentration of 0.2 g / L, a nickel concentration of 2 g / L, and a potassium pyrophosphate concentration of 300 g / L was used to condition the roughened layer and the carrier at a liquid temperature of 40 ° C and a current density of 0.5 A / dm 2 . The surface is zinc-nickel alloy plated. Here, a chromate treatment was performed on the surface subjected to the zinc-nickel alloy plating treatment using a 3 g / L aqueous solution of chromic acid under the conditions of pH 10 and a current density of 5 A / dm 2 .

(7)矽烷偶合劑處理 (7) Silane coupling agent treatment

於附載體銅箔之極薄銅層側表面吸附含γ-縮水甘油氧基丙基三甲氧基矽烷2g/L之水溶液,藉由電熱器使水分蒸發,進行矽烷偶合劑處理。此時,矽烷偶合劑處理於載體側並未進行。 An aqueous solution containing 2 g / L of γ-glycidyloxypropyltrimethoxysilane was adsorbed on the surface of the ultra-thin copper layer of the copper foil with a carrier, and the water was evaporated by an electric heater to perform a silane coupling agent treatment. At this time, the silane coupling agent treatment was not performed on the carrier side.

(8)評價 (8) Evaluation

針對如此所得之附載體銅箔,如以下進行各種特性評價。 The thus obtained copper foil with a carrier was evaluated for various characteristics as follows.

<表面性狀參數> <Surface properties parameter>

自附載體銅箔剝落載體,使用表面粗糙度測定器(SE3500,小坂研究所股份有限公司製),藉以下諸條件測定載體之剝離層側之面之峰計數Pc、起伏曲線要件之平均高度Wc及十點平均粗糙度Rz。結果彙總示於表2。 The copper foil was peeled off from the self-supporting carrier, and a surface roughness tester (SE3500, manufactured by Kosaka Research Institute Co., Ltd.) was used to measure the peak count Pc on the surface of the peeling layer side of the carrier and the average height Wc of the undulation curve by the following conditions And ten-point average roughness Rz. The results are summarized in Table 2.

[峰計數Pc] [Peak Count Pc]

-依據規格:JIS B0601-2001(ISO 4287-1997) -Based on specifications: JIS B0601-2001 (ISO 4287-1997)

-截斷值:0.8mm -Cut-off value: 0.8mm

-評價長度:0.8mm -Evaluation length: 0.8mm

[平均高度Wc] [Average height Wc]

-依據規格:JIS B0601-2001(ISO 4287-1997) -Based on specifications: JIS B0601-2001 (ISO 4287-1997)

-截斷值:fh 0.8mm/fl 8.0mm -Cut-off value: fh 0.8mm / fl 8.0mm

-評價長度:16mm -Evaluation length: 16mm

[十點平均粗糙度Rz] [Ten-point average roughness Rz]

-依據規格:JIS B0601-1994 -Based on specifications: JIS B0601-1994

-截斷值:0.8mm -Cut-off value: 0.8mm

-評價長度:0.8mm -Evaluation length: 0.8mm

<藥液浸蝕量> <Amount of Chemical Erosion>

使用附載體銅箔製作貼銅積層板,對於貼銅積層板調查藥液浸蝕量。首先,將附載體銅箔之極薄銅層積層於預浸體(三菱瓦斯化學股份有限公司製,FR-4),於185℃加壓90分鐘。以Sha切斷機切斷如此所得之貼銅積層板之端面。使用過錳酸鈉溶液對切斷之貼銅積層板實施去膠渣處理。 A copper-clad laminated board was produced using the copper foil with a carrier, and the amount of chemical solution erosion was investigated for the copper-clad laminated board. First, an ultra-thin copper layer with a copper foil with a carrier was laminated on a prepreg (manufactured by Mitsubishi Gas Chemical Co., Ltd., FR-4) and pressurized at 185 ° C for 90 minutes. The end face of the copper-clad laminated board thus obtained was cut by a Sha cutter. Use the sodium permanganate solution to remove the glue residue on the cut copper-clad laminated board.

該去膠渣處理使用羅門哈斯電子材料股份有限公司之以下所示之處理液,藉由依序進行以下各處理而實施。 This slag removal treatment is performed by using the following processing liquids of Rohm and Haas Electronic Materials Co., Ltd. and sequentially performing the following processes.

[膨潤處理] [Swelling treatment]

-處理液:CIRCUPOSIT MLB CONDITIONER 211- 120mL/L及CIRCUPOSIT Z-100mL/L -Treatment liquid: CIRCUPOSIT MLB CONDITIONER 211- 120mL / L and CIRCUPOSIT Z-100mL / L

-處理條件:於75℃浸漬5分鐘 -Processing conditions: immersion at 75 ° C for 5 minutes

[過錳酸處理] [Permanganic acid treatment]

-處理液:CIRCUPOSIT MLB PROMOTOR 213A-110mL/L及CIRCUPOSIT MLB PROMOTOR 213B-150mL/L -Treatment liquid: CIRCUPOSIT MLB PROMOTOR 213A-110mL / L and CIRCUPOSIT MLB PROMOTOR 213B-150mL / L

-處理條件:於80℃浸漬5分鐘 -Processing conditions: Immersion at 80 ° C for 5 minutes

[中和處理] [Neutralization treatment]

-處理液:CIRCUPOSIT MLB NEUTRALIZER 216-2-200mL/L -Treatment liquid: CIRCUPOSIT MLB NEUTRALIZER 216-2-200mL / L

-處理條件:於45℃浸漬5分鐘 -Processing conditions: immersion at 45 ° C for 5 minutes

隨後,自貼銅積層板剝離載體,以顯微鏡觀察而測定極薄銅層表面之浸蝕量。由於極薄銅層表面之侵入過錳酸鈉溶液之區域變色,故上述浸蝕量之測定係藉由測量極薄銅層表面之變色區域之距離極薄銅層端部之最大到達距離而進行。結果彙總示於表2。 Subsequently, the carrier was peeled from the copper-clad laminated board, and the amount of etching on the surface of the ultra-thin copper layer was measured with a microscope observation. Because the area of the surface of the ultra-thin copper layer penetrates into the sodium permanganate solution, the measurement of the above-mentioned erosion amount is performed by measuring the maximum reach distance from the end of the ultra-thin copper layer to the discolored area on the surface of the ultra-thin copper layer. The results are summarized in Table 2.

<極薄銅層破裂> <Ultra-thin copper layer cracked>

使用附載體銅箔製作貼銅積層板,調查因載體剝離之極薄銅層破裂程度。首先,將附載體銅箔之極薄銅層積層於預浸體(三菱瓦斯化學股份有限公司製,FR-4),於185℃加壓90分鐘。自如此所得之貼銅積層板剝離載體。 於暗室對極薄銅層照射背光,測量長度5μm以上之極薄銅層之破裂個數,換算為每1m2之個數。結果彙總示於表2。 A copper-clad laminated board was produced using a copper foil with a carrier, and the degree of cracking of the ultra-thin copper layer due to carrier peeling was investigated. First, an ultra-thin copper layer with a copper foil with a carrier was laminated on a prepreg (manufactured by Mitsubishi Gas Chemical Co., Ltd., FR-4) and pressurized at 185 ° C for 90 minutes. The carrier was peeled from the copper-clad laminated board thus obtained. The backlight was irradiated to the ultra-thin copper layer in a dark room, and the number of cracks of the ultra-thin copper layer with a length of 5 μm or more was measured and converted into a number per 1 m 2 . The results are summarized in Table 2.

<埋入電路之配線圖型之缺陷/凹陷評價> <Evaluation of Defects / Dent of Wiring Patterns of Embedded Circuits>

欲調查起因於上述極薄銅層破裂之無芯支撐體表面之配線圖型(亦即作為增層配線之埋入電路)之過蝕刻,使用埋入電路形成法如以下進行樣品製作及評價。 To investigate the over-etching of the wiring pattern on the surface of the coreless support which is caused by the cracking of the above-mentioned extremely thin copper layer (that is, the embedded circuit as the build-up wiring), the embedded circuit formation method was used to make and evaluate the samples as follows.

於4片預浸體(三菱瓦斯化學股份有限公司製,FR-4)上積層附載體銅箔之載體,於185℃加壓90分鐘。隨後,以厚度15μm之光阻劑形成線/間隔(L/S)為12μm/12μm之配線圖型區域(大小10mm□×20零件),藉由硫酸銅鍍敷液以12μm之厚度形成銅電鍍。再者,使用光阻劑剝離液,於45℃進行5分鐘之光阻劑剝離,形成銅鍍敷圖型。其次,積層一片預浸體(三菱瓦斯化學股份有限公司製,FR-4),於185℃加壓90分鐘,形成增層之層。隨後,玻璃上述無芯支撐體獲得增層配線板。對於露出於該增層配線板表面之極薄銅層,淋洗噴霧硫酸/過氧化氫水溶液,蝕刻去除極薄銅層。藉由200倍之顯微鏡觀察如此埋入於增層之層中之電路,而計算發生配線圖型之缺陷/凹陷之零件發生率。結果彙總示於表2。 Carrier copper foil with a carrier was laminated on 4 pieces of prepreg (manufactured by Mitsubishi Gas Chemical Co., Ltd., FR-4), and pressed at 185 ° C for 90 minutes. Subsequently, a 15 μm thick photoresist was used to form a wiring pattern area (size 10 mm x 20 parts) with a line / space (L / S) of 12 μm / 12 μm, and a copper plating was formed with a copper sulfate plating solution to a thickness of 12 μm. . Furthermore, using a photoresist stripping solution, the photoresist was peeled at 45 ° C. for 5 minutes to form a copper plating pattern. Next, a layer of prepreg (FR-4, manufactured by Mitsubishi Gas Chemical Co., Ltd.) was laminated, and pressed at 185 ° C for 90 minutes to form a layer of build-up. Subsequently, the above-mentioned coreless support of glass was obtained as a build-up wiring board. For the ultra-thin copper layer exposed on the surface of the build-up wiring board, the sulfuric acid / hydrogen peroxide aqueous solution was spray-washed, and the ultra-thin copper layer was removed by etching. By observing the circuit thus buried in the build-up layer by a 200-fold microscope, the incidence of defects / depressions in the wiring pattern was calculated. The results are summarized in Table 2.

結果 result

針對例1~7所得之評價結果彙總示於表2。 The evaluation results obtained for Examples 1 to 7 are summarized in Table 2.

由表2所示之結果,藉由使用載體之剝離層側之面之Wc×Pc為20~50μm之範圍內之附載體銅箔,有意義地減低藥液浸蝕量且減低極薄銅層破裂,藉此亦有意義地減低埋入電路之配線圖型不良。 From the results shown in Table 2, by using a copper foil with a carrier having a Wc × Pc in the range of 20 to 50 μm on the side of the release layer side of the carrier, the amount of chemical solution erosion was significantly reduced and the ultra-thin copper layer was reduced. This also significantly reduces the bad wiring pattern of the embedded circuit.

Claims (7)

一種方法,其係印刷配線板之製造方法,其特徵係包含下述步驟:準備附載體銅箔之步驟,該附載體銅箔係依序具備載體、剝離層及極薄銅層,且前述載體之前述剝離層側之面中,依據B0601-2001測定之起伏曲線要件之平均高度Wc與峰計數Pc之乘積的Wc×Pc為20~50μm者,於前述載體或極薄銅層之上形成增層配線層而製作附增層配線層之積層體之步驟,將前述附增層配線層之積層體於前述剝離層分離而得含前述增層配線層之多層配線板之步驟,及加工前述多層配線板而得印刷配線板之步驟。A method, which is a method for manufacturing a printed wiring board, which includes the following steps: preparing a copper foil with a carrier, the copper foil with a carrier having a carrier, a release layer, and an ultra-thin copper layer in this order; and the carrier On the surface of the aforementioned peeling layer side, where the average height Wc of the undulating curve requirements measured in accordance with B0601-2001 and the product Wc × Pc of the peak count Pc is 20 to 50 μm, an increase is formed on the aforementioned carrier or an extremely thin copper layer Steps of forming a multilayer body with an additional wiring layer by separating the wiring layers, separating the multilayer body with the additional wiring layer from the release layer to obtain a multilayer wiring board including the additional wiring layer, and processing the multilayer A step of obtaining a printed wiring board from the wiring board. 如請求項1之方法,其於前述增層配線層形成前,進而包含將前述附載體銅箔積層於支撐體之單面或兩面而形成積層體之步驟。The method according to claim 1, further comprising the step of forming the laminated body by laminating the copper foil with a carrier on one or both sides of the support before forming the additional wiring layer. 如請求項1或2之方法,其中於前述載體之前述剝離層側之面中,前述Wc為0.5~1.0μm。The method according to claim 1 or 2, wherein in the surface of the release layer side of the carrier, the Wc is 0.5 to 1.0 μm. 如請求項1或2之方法,其中於前述載體之前述剝離層側之面中,前述Pc為22~65。The method according to claim 1 or 2, wherein in the surface of the release layer side of the carrier, the Pc is 22 to 65. 如請求項1或2之方法,其中於前述載體之前述剝離層側之面中,依據JIS B0601-1994所測定之十點平均粗糙度Rz為1.5~6.5μm。The method according to claim 1 or 2, wherein the ten-point average roughness Rz measured in accordance with JIS B0601-1994 in the surface of the aforementioned release layer side of the aforementioned carrier is 1.5 to 6.5 μm. 如請求項1或2之方法,其中於前述載體之前述剝離層側之面中,前述Wc×Pc為26~30μm。The method according to claim 1 or 2, wherein in the surface of the release layer side of the carrier, the Wc × Pc is 26 to 30 μm. 如請求項1或2之方法,其中形成前述增層配線層之步驟包含使用鉻酸鹽溶液及過錳酸鹽溶液之至少一者之去膠渣步驟。The method as claimed in claim 1 or 2, wherein the step of forming the aforementioned build-up wiring layer includes a step of removing slag using at least one of a chromate solution and a permanganate solution.
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