TWI626333B - Manufacturing method and memory medium for optical device including light shielding body - Google Patents

Abstract

Low-cost and high-precision shading of optical devices body.

a manufacturing method of an optical device including a light shielding body, A coating having a plating layer (23) of forming a Co or a Co alloy on the substrate (2) by electroless plating is provided to produce a light shielding body (23A) composed of a plating layer (23).

Description

Manufacturing method and memory medium for optical device including light shielding body

The present invention relates to a method for producing an optical device including a light-shielding body, a manufacturing system anti-memory medium, and particularly to a method and a memory medium for an optical device including a light-shielding body which is excellent in precision and can be produced at low cost.

In a solid-state image pickup device such as a CMOS image sensor or a CCD image sensor, a surface illumination type and a back side illumination type are used. In the back-illuminated solid-state imaging device, a plurality of light-emitting diodes are provided on the surface side of the semiconductor substrate, and color filters or microlenses are formed on the back surface side, and the light-emitting diodes on the surface side are read by the light-emitting diodes on the surface side. The photo-charge generated by the light incident on the semiconductor substrate from the back side is outputted by the signal readout circuit.

In the back side illumination type, since the signal readout circuit is not required to be provided on the back side, the aperture ratio can be increased, and since the thickness of the semiconductor substrate can be increased, almost all incident light energy can be photoelectrically emitted. Conversion.

However, due to the back-illuminated solid-state image sensor, When the photoelectric conversion efficiency is increased and the semiconductor substrate is made thicker and the optical path length is increased, there is a problem in that incident light obliquely incident enters the adjacent light-emitting diode.

In order to prevent incident light obliquely incident into the adjacent light-emitting diodes, the light-emitting diodes are formed by PVD or CVD (see, for example, Patent Documents 1 and 2). .

[Previous Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-65098

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2010-193073

However, when a light-shielding body is formed on a semiconductor substrate by PVD or CVD, the manufacturing cost becomes high, and it is difficult to produce a light-shielding body having a fine structure and good light-shielding properties.

The present invention has been made in view of such a viewpoint, and it is an object of the present invention to provide a method and a memory medium for an optical device including a light-shielding body having high precision and good light-shielding properties and capable of being produced at low cost.

The present invention provides a method of manufacturing an optical device including a light-blocking body, comprising: preparing a substrate; and applying a plating solution containing Co or a Co alloy to the substrate; The method of electrolytic plating treatment forms a coating of a coating layer of Co or Co alloy.

The present invention relates to a memory medium storing a computer program for causing a manufacturing system for an optical device including a light-blocking body to execute a manufacturing method of the optical device, the memory medium, characterized in that the optical device is manufactured by: A process for preparing a substrate; and a method of forming a plating layer of Co or a Co alloy by applying an electroless plating treatment to a plating solution containing Co or a Co alloy on the substrate.

According to the present invention, the light shielding body can be produced with high precision and at low cost.

2‧‧‧Substrate

2a‧‧‧ recess

10‧‧‧Manufacturing system for optical devices

11‧‧‧Substrate transfer arm

13‧‧‧catalyst sorption layer formation

14‧‧‧ plating layer forming department

15‧‧‧burning department

16‧‧‧Photoresist pattern forming department

17‧‧‧ etching processing department

17A‧‧‧Resistance Pattern Removal Department

18‧‧‧匣 box station

19‧‧‧Control Department

19A‧‧‧Memory Media

21‧‧‧metal layer

22‧‧‧catalyst adsorption layer

23‧‧‧ plating layer

23A‧‧‧shading body

27‧‧‧resist pattern

30‧‧‧ Solid-state imaging components

35‧‧‧Color filter layer

36‧‧‧Lighting diode

Fig. 1 is a block diagram showing a manufacturing system of an optical device according to an embodiment of the present invention.

[Fig. 2] Fig. 2 (a) to (e) are views showing a substrate on which a method of manufacturing an optical device according to an embodiment of the present invention is carried out.

Fig. 3 is a view showing a solid-state image pickup element which is an example of an optical device including a light-blocking body.

Fig. 4 is a view showing the light blocking characteristics of the light blocking body.

Fig. 5 is a view showing the light blocking characteristics of the light blocking body.

Fig. 6 is a view showing the light blocking characteristics of the light blocking body.

Fig. 7 is a view showing the arrangement relationship between a light-emitting diode and a light-blocking body.

[Fig. 8] Fig. 8 is a side cross-sectional view showing a portion where a plating layer is formed.

[Fig. 9] Fig. 9 is a plan view showing a plating layer forming portion.

[Fig. 10] Fig. 10 (a) to (e) are views showing a substrate on which a method of manufacturing an optical device according to a modification of the present invention is carried out.

[Fig. 11] Fig. 11 (a) to (c) are views showing a substrate on which a method of manufacturing an optical device according to a modification of the present invention is carried out.

[Best form for carrying out the invention]

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Embodiment of the Invention>

First, an embodiment of the present invention will be described with reference to Figs. 1 to 9 .

Initially, an optical device including a light-shielding body such as a back-illuminated solid-state image sensor 30 will be described with reference to FIG.

As shown in FIG. 3, a solid-state image sensor 30, an inter-line type CCD, and a plurality of light-emitting diodes constituting a plurality of vertical charge transfer paths (VCCDs) 35 and pixels are formed on the surface side of the p-type semiconductor substrate 2 ( Photoelectric conversion element 36, a plurality of color filters (red) are disposed on the back side (R), green (G), blue (B) layer 33 and a plurality of microlenses 34.

The color filter layers 33 of the respective colors are layered at positions along the alignment of the corresponding light-emitting diodes 36, and each of the microlenses 34 is focused on the center of the corresponding light-emitting diode 36. form. Further, on the surface side of the semiconductor substrate 2, an insulating layer 37 and a metal electrode 38 are laminated on the vertical charge transfer path 35.

The back-illuminated solid-state imaging device 30 shown in FIG. 3 is a CCD type. However, the present embodiment can be similarly applied to other types of solid-state imaging devices such as the CMOS type of Patent Document 2.

A concave portion 2a is formed on the back surface side surface of the semiconductor substrate (hereinafter also referred to as the substrate) 2, and a color filter layer 33 and a microlens 34 are laminated on the back surface side surface of the substrate 2.

The color filter layer 33 is divided into 36 units of a pixel (light emitting diode), and a light blocking body 23A is provided between adjacent regions on the substrate 2 side of the color filter layer 33. The light blocking body 23A is provided to prevent oblique incident light from entering adjacent pixels.

FIG. 7 is a view showing a state in which the light-blocking body 23A is viewed from the back side, and is formed in a mesh shape as a whole, and each mesh is divided into a single pixel. By providing the light-shielding body 23A, it is possible to suppress the detection of color mixture between adjacent pixels of different colors in the solid-state imaging device for image capturing, and it is possible to suppress detection in the solid-state image sensor for multi-plate color image capturing. Inter-symbol interference between adjacent pixels of the same color signal.

Next, a light for forming a light-shielding body including the above-described back-illuminated solid-state image sensor 30 and the like will be described with reference to FIGS. 1 and 2 . The manufacturing system of the optical device of the device.

<Manufacturing system of optical device>

First, a manufacturing system of an optical device including the light-blocking body of the present invention will be described with reference to FIG.

As shown in FIG. 1, the manufacturing system 10 of the optical device including the light-shielding body applies a plating process to a substrate (矽 substrate) 2 having a concave portion 2a such as a semiconductor wafer to produce a light-shielding body.

The manufacturing system 10 of the optical device including the light-shielding body is provided with a cassette holder 18 on which a cassette (not shown) in which the substrate 2 is housed is mounted, and the substrate 2 is taken out from the cassette on the cassette station 18. The substrate transport arm 11 and the transport path 11a on which the substrate transport arm 11 travels are carried.

Further, on the side of the traveling path 11a, a catalyst adsorbing layer forming portion 13 is disposed, and the catalyst is adsorbed on the substrate 2 to form a catalyst adsorbing layer 22 to be described later; and the plating layer forming portion 14 is formed by A plating solution containing Co or a Co alloy is supplied onto the catalyst adsorption layer 22 of the substrate 2 to be subjected to an electroless plating treatment to form a plating layer 23 of Co or a Co alloy.

Further, on the other side of the traveling path 11a, a burning portion 15 is disposed, and the catalyst adsorbing layer 22 and the plating layer 23 formed on the substrate 2 are baked, and the photoresist pattern forming portion 16 is used for plating. A photoresist pattern 27 is formed on the layer 23. The photoresist pattern forming portion 16 is not shown, but has a photoresist coating portion, an exposure portion, and a developing portion.

Further, an etching treatment unit 17 is disposed adjacent to the burning portion 15. The light-shielding body 23A protruding outward from the substrate 2 is formed in the concave portion 2a of the substrate 2 by the etching of the resist pattern 27 as a mask, and the photoresist pattern removing portion 17A is removed. Resistive pattern 27.

Further, each of the constituent members of the plating treatment system described above, for example, the cassette station 18, the substrate transfer arm 11, the catalyst adsorption layer forming portion 13, the plating layer forming portion 14, the baked portion 15, and the photoresist pattern forming portion 16 The etching processing unit 17 and the photoresist pattern removing unit 17A are controlled by the control unit 19 in accordance with various programs recorded on the memory medium 19A provided in the control unit 19, thereby performing various processes on the substrate 2. Here, the memory medium 19A stores various programs such as various setting information or a plating processing program to be described later. As the memory medium 19A, a computer or a memory such as a ROM or a RAM, or a disk-shaped memory medium such as a CD-ROM, a DVD-ROM, or a floppy disk can be used.

Next, the plating layer forming portion 14 for forming the plating layer 23 will be further described.

The plating layer forming portion 14 can be configured by a plating processing apparatus as shown in FIGS. 8 and 9.

The plating layer forming portion 14 as described above is as shown in Figs. 8 and 9 .

In other words, the plating layer forming portion 14 includes a substrate rotation holding mechanism (substrate housing portion) 110 for rotating and holding the substrate 2 inside the casing 101, and a liquid supply mechanism, as shown in FIGS. 8 and 9. 50, 90, a plating solution or a cleaning liquid is supplied to the surface of the substrate 2; the cup 105 receives a plating solution or a cleaning liquid scattered from the substrate 2; and a discharge port 124; 129, 134, discharging the plating solution or the cleaning liquid received by the cup 105; the liquid discharge mechanism 120, 125, 130, discharging the liquid collected at the discharge port; and the control mechanism 160, controlling the substrate rotation holding mechanism 110, the liquid Supply mechanisms 50, 90, cup 105 and liquid discharge mechanisms 120, 125, 130.

(substrate rotation holding mechanism)

As shown in FIGS. 8 and 9, the substrate rotation holding mechanism 110 has a hollow cylindrical rotating shaft 111 extending vertically in the casing 101, and a rotating table 112 attached to the upper end portion of the rotating shaft 111; The wafer jig 113 is provided on the upper outer peripheral portion of the turntable 112 and supports the substrate 2; and the rotating mechanism 162 rotationally drives the rotating shaft 111. The rotation mechanism 162 is controlled by the control mechanism 160, and the rotation shaft 111 is rotationally driven by the rotation mechanism 162, whereby the substrate 2 supported by the wafer jig 113 is rotated.

(liquid supply mechanism)

Next, a liquid supply mechanism 50, 90 for supplying a plating solution, a cleaning liquid, or the like to the surface of the substrate 2 will be described with reference to Figs. 8 and 9 . The liquid supply mechanisms 50 and 90 include a plating solution supply mechanism 50, and a plating solution for applying a plating treatment to the surface of the substrate 2, and a cleaning treatment liquid supply mechanism 90 for supplying the surface of the substrate 2 Net treatment solution.

As shown in FIGS. 8 and 9, the discharge nozzle 52 is attached to the nozzle head 104. Further, the nozzle head 104 is attached to the front end portion of the arm portion 103, and the arm portion 103 is extendable in the vertical direction and is fixed to the borrowing portion. The support shaft 102 is rotationally driven by the rotating mechanism 165. With such a configuration, the plating liquid can be discharged to an arbitrary portion of the surface of the substrate 2 from the desired height via the discharge nozzle 52.

(cleaning treatment liquid supply mechanism 90)

As described later, the cleaning treatment liquid supply mechanism 90 includes a nozzle 92 attached to the nozzle head 104 as shown in FIG. 8 for the user of the cleaning operation of the substrate 2. In this case, any one of the cleaning treatment liquid or the rinsing treatment liquid is selectively discharged from the nozzle 92 to the surface of the substrate 2.

(liquid discharge mechanism)

Next, referring to Fig. 8, liquid discharge mechanisms 120, 125, and 130 for discharging the plating solution, the cleaning liquid, and the like scattered from the substrate 2 will be described. As shown in FIG. 8, in the casing 101, a cup 105 is disposed, which is driven in the vertical direction by a lifting mechanism 164, and has discharge ports 124, 129, and 134. The liquid discharge mechanisms 120, 125, 130 are liquid discharges collected at the discharge ports 124, 129, 134, respectively.

As shown in FIG. 8, the plating liquid discharge mechanisms 120, 125 have recovery flow paths 122, 127 and waste flow paths 123, 128 which are switched by the flow path switches 121, 126, respectively. The recovery flow paths 122 and 127 are flow paths for recovering the plating liquid and reused. On the other hand, the waste flow paths 123 and 128 are flow paths for discarding the plating liquid. Moreover, as shown in FIG. 8, only the waste flow path 133 is provided in the process liquid discharge mechanism 130.

Further, as shown in FIG. 8 and FIG. 9, the recovery flow path 122 of the plating liquid discharge mechanism 120 for discharging the plating liquid is connected to the outlet side of the substrate housing portion 110, and the recovery flow path 122 is on the substrate. A cooling plating solution buffer 120A is provided in the vicinity of the outlet side of the accommodating portion 110.

<Method of Manufacturing Optical Device>

Next, a method of manufacturing an optical device including a light-shielding body, which is an embodiment of the above-described configuration, will be described with reference to Figs. 2(a) to 2(e).

First, in the prior art, a recess 2a is formed in a substrate (tantalum substrate) 2 made of a semiconductor wafer or the like, and the substrate 2 in which the recess 2a is formed is transported to the optical device including the light-shielding body of the present invention. Within the manufacturing system 10. In this case, a metal layer 21 capable of adsorbing Pd ions is formed on the substrate 2 (see FIG. 2(a)).

In the manufacturing system 10 of the optical device including the light shielding body, the substrate 2 is transferred to the catalyst adsorption layer forming portion 13 by the substrate transfer arm 11. In the catalyst adsorption layer forming portion 13, for example, Pd ions serving as a catalyst are adsorbed on the metal layer 21 of the substrate 2 to form a catalyst adsorption layer 22 (see FIG. 2(b)). In this case, the catalyst adsorption layer 22 formed on the substrate 2 is formed on the surface of the substrate 2 and the inner surface of the concave portion 2a.

As the catalyst adsorption treatment, for example, a treatment of spraying a palladium chloride aqueous solution on the substrate 2 by a nozzle to adsorb Pd ions serving as a catalyst on the surface of the substrate 2 can be employed. Specifically, the pair of substrates 2 The tin chloride solution is sprayed to adsorb the tin ions on the surface of the substrate 2, and secondly, the palladium chloride aqueous solution is sprayed onto the substrate 2, the tin ions are replaced by the Pd ions, and the Pd ions are adsorbed, and then the sodium hydroxide is sprayed onto the substrate 2. Remove excess tin ions.

Further, an adhesion layer forming portion may be provided in the front stage of the catalyst adsorption layer forming portion 13, and a coupling agent such as a decane coupling agent may be adsorbed on the substrate 2 having the concave portion 2a in the adhesion layer forming portion, and on the substrate 2 An adhesion layer is formed on the surface (SAM treatment). The adhesion layer formed by adsorbing the decane coupling agent improves the adhesion between the catalyst adsorption layer 22 and the substrate 2.

Next, the substrate 2 on which the catalyst adsorption layer 22 is formed on the metal layer 21 is transferred from the catalyst adsorption layer forming portion 13 to the inside of the burned portion 15 by the substrate transfer arm 11. Further, in the sealed casing of the burn-in portion 15, the substrate 2 is heated on a hot plate in an inert atmosphere filled with N ₂ gas in order to suppress oxidation. As a result, the catalyst adsorption layer 22 of the substrate 2 is baked (Bake treatment). The moisture in the catalyst adsorption layer 22 is released to the outside by burning the catalyst adsorption layer 22 as described above.

As described above, in the burn-in portion 15, after the catalyst adsorption layer 22 is baked on the substrate 2, the substrate 2 is transferred to the plating layer forming portion 14 by the substrate transfer arm 11.

Next, in the plating layer forming portion 14, a plating layer 23 containing Co or a Co alloy is formed on the catalyst adsorbing layer 22 of the substrate 2 (see FIG. 2(c)).

In this case, the plating layer forming portion 14 is as shown in FIG. And a plating treatment apparatus as shown in FIG. 9, and a plating layer 23 containing Co or a Co alloy may be formed by applying an electroless plating treatment to the catalyst adsorption layer 22 of the substrate 2. .

When the plating layer 23 is formed in the plating layer forming portion 14, a plating liquid containing, for example, Co-WB can be used as the plating liquid, and the temperature of the plating liquid is maintained at 40 to 75. °C (preferably 65 ° C).

A plating layer 23 containing Co-W-B is formed on the catalyst adsorption layer 22 of the substrate 2 by electroless plating treatment by supplying a plating solution containing Co-W-B to the substrate 2.

Next, the substrate 2 on which the plating layer 23 is formed on the catalyst adsorbing layer 22 is again transferred from the plating layer forming portion 14 to the burning portion 15 by the substrate carrying arm 11, and by the burning portion 15. The plating layer 23 is baked.

By depositing the plating layer 23 on the substrate 2 in this manner, the moisture in the plating layer 23 can be released outward, and the intermetallic bonding in the plating layer 23 can be simultaneously improved. Next, the substrate 2 heated in the burn-in portion 15 is transferred to the resist pattern forming portion 16 by the substrate transfer arm 11. Thereafter, in the resist pattern forming portion 16, a photoresist pattern 27 is formed on the plating layer 23 of the substrate 2. In this case, the photoresist pattern 27 is formed at a position corresponding to the concave portion 2a of the substrate 2 (see FIG. 2(d)).

Next, the substrate 2 on which the photoresist pattern 27 is formed in the photoresist pattern forming portion 16 is transferred to the etching process by the substrate transfer arm 11. Part 17. Further, in the etching processing portion 17, the resist pattern 27 is used as a mask, and the plating layer 23 is subjected to an etching treatment. In this way, the plating layer 23 not covered by the photoresist pattern 27 is removed, and the light blocking body 23A extending upward from the concave portion 2a of the substrate 2 is formed (see FIG. 2(e)). Next, the substrate 2 is transferred to the photoresist pattern removing portion 17A, and the unnecessary photoresist pattern 27 is removed in the photoresist pattern removing portion 17A.

Next, the transmittance of the light-blocking body 23A composed of the plating layer 23 containing Co-W-B is shown in FIGS. 4 to 6.

As shown in FIG. 4, the transmittance of the red light including the light-shielding body 23A of Co-WB is a light-shielding body made of NiB and a light-shielding body formed of Ta formed by PVD, having a thickness of 50 to 100 nm. The light-shielding body composed of W formed by PVD is lower in comparison and exhibits good light-shielding characteristics.

Further, as shown in FIG. 5, the transmittance of the green light including the light-shielding body 23A of Co-WB is a thickness of 50 to 100 nm, a light-shielding body made of NiB, and Ta formed of PVD. The light-shielding body is lower in comparison with the light-shielding body composed of W formed by PVD, and exhibits good light-shielding properties.

Further, as shown in FIG. 6, the transmittance of the blue light including the light-shielding body 23A of Co-WB is a thickness of 50 to 100 nm, and a light-shielding body made of NiB and Ta formed by PVD. The light-shielding body is lower in comparison with the light-shielding body composed of W formed by PVD, and exhibits good light-shielding properties.

<Modification of the present invention>

Next, a modification of the present invention will be described with reference to Figs. 10(a) to 10(e) and Figs. 11(a) to 11(d).

10(a) to (e) and the modification of the present invention shown in Figs. 11(a) to 11(d), the manufacturing method of the optical device including only the light shielding body is different, and other configurations are The embodiment shown in FIGS. 1 to 9 is substantially the same.

In the modified examples shown in Figs. 10(a) to 10(e) and Figs. 11(a) to 11(d), the same portions as those of the embodiment shown in Figs. 1 to 9 are given the same symbols. The detailed description is omitted.

<First Modification of Manufacturing Method of Optical Device>

First, a first modification of the method of manufacturing an optical device will be described with reference to Figs. 10(a) to 10(e).

First, in the prior art, a recess 2a is formed in a substrate (tantalum substrate) 2 made of a semiconductor wafer or the like, and the substrate 2 in which the recess 2a is formed is transported to the optical device including the light-shielding body of the present invention. Within the manufacturing system 10. In this case, a metal layer 21 capable of adsorbing Pd ions is formed on the substrate 2 (see FIG. 10(a)).

Next, in the manufacturing system 10 of the optical device including the light shielding body, the substrate 2 is transferred to the catalyst adsorption layer forming portion 13 by the substrate transfer arm 11. In the catalyst adsorption layer forming portion 13, for example, Pd ions serving as a catalyst are adsorbed on the metal layer 21 of the substrate 2 to form a catalyst adsorption layer 22 (see FIG. 10(b)). In this case, The catalyst adsorption layer 22 formed on the substrate 2 is formed on the surface of the substrate 2 and the inner surface of the recess 2a.

As the catalyst adsorption treatment, for example, a treatment of spraying a palladium chloride aqueous solution on the substrate 2 by a nozzle to adsorb Pd ions serving as a catalyst on the surface of the substrate 2 can be employed. Specifically, a tin chloride solution is sprayed onto the substrate 2 to adsorb tin ions on the surface of the substrate 2, and then, a palladium chloride aqueous solution is sprayed onto the substrate 2, and Pd ions are substituted for the Pd ions to adsorb the Pd ions. The substrate 2 is sprayed with sodium hydroxide to remove excess tin ions.

Further, an adhesion layer forming portion may be provided in the front stage of the catalyst adsorption layer forming portion 13, and a coupling agent such as a decane coupling agent may be adsorbed on the substrate 2 having the concave portion 2a in the adhesion layer forming portion, and on the substrate 2 An adhesion layer is formed on the surface (SAM treatment). The adhesion layer formed by adsorbing the decane coupling agent improves the adhesion between the catalyst adsorption layer 22 and the substrate 2.

Next, the substrate 2 on which the catalyst adsorption layer 22 is formed on the metal layer 21 is transferred from the catalyst adsorption layer forming portion 13 to the inside of the burned portion 15 by the substrate transfer arm 11. Further, in the sealed casing of the burn-in portion 15, the substrate 2 is heated on a hot plate in an inert atmosphere filled with N ₂ gas in order to suppress oxidation. As a result, the catalyst adsorption layer 22 of the substrate 2 is baked (Bake treatment). The moisture in the catalyst adsorption layer 22 is released to the outside by burning the catalyst adsorption layer 22 as described above.

In this manner, after the catalyst adsorption layer 22 on the substrate 2 is baked in the burn-in portion 15, the substrate 2 is transferred to the substrate transfer arm 11 to The photoresist pattern forming portion 16. Further, in the resist pattern forming portion 16, a photoresist pattern 27 having an opening 27a is formed on the catalyst adsorbing layer 22 (see FIG. 10(c)). Here, the opening 27a of the photoresist pattern 27 is formed to surround the concave portion 2a of the substrate 2.

Next, the substrate 2 is transferred to the plating layer forming portion 14 by the substrate transfer arm 11, and in the plating layer forming portion 14, plating including Co or Co alloy is formed in the opening 27a of the resist pattern 27. The coating 23 (see Fig. 10(d)).

In this case, the plating layer forming portion 14 is constituted by a plating processing apparatus as shown in FIGS. 8 and 9, and can be subjected to electroless plating on the catalyst adsorption layer 22 of the substrate 2. In a manner of treatment, a plating layer 23 containing Co or a Co alloy is formed.

In the case where the plating layer 23 is formed in the plating layer forming portion 14, as the plating liquid, for example, a plating liquid containing Co-WB can be used, and the temperature of the plating solution is maintained at 40 to 75. °C (preferably 65 ° C).

By supplying a plating solution containing Co-WB to the substrate 2, the catalyst adsorption layer 22 formed in the opening 27a of the photoresist pattern 27 is formed by electroless plating treatment to form Co. -WB plating layer 23.

Next, the substrate 2 on which the plating layer 23 is formed on the catalyst adsorbing layer 22 is again transferred from the plating layer forming portion 14 to the burning portion 15 by the substrate carrying arm 11, and by the burning portion 15. The plating layer 23 is baked.

By depositing the plating layer 23 on the substrate 2 in this manner, the moisture in the plating layer 23 can be released outward, and the intermetallic bonding in the plating layer 23 can be simultaneously improved.

Then, the substrate on which the plating layer 23 is formed in the opening 27a of the photoresist pattern 27 of the substrate 2 is transferred to the photoresist pattern removing portion 17A by the substrate transfer arm 11, and is removed in the photoresist pattern removing portion 17A. Resistive pattern 27. As a result, the light shielding body 23A extending upward from the concave portion 2a and formed by the plating layer 23 can be obtained on the substrate 2 (see FIG. 10(e)).

<Second Modification of Manufacturing Method of Optical Device>

Next, a second modification of the manufacturing method of the optical device will be described with reference to FIGS. 11(a) to 11(c).

First, in the prior art, a recess 2a is formed in a substrate (tantalum substrate) 2 made of a semiconductor wafer or the like, and the substrate 2 in which the recess 2a is formed is transported to the optical device including the light-shielding body of the present invention. Within the manufacturing system 10. In this case, a metal layer 21 capable of adsorbing Pd ions is formed on the bottom surface of the concave portion 2a of the substrate 2.

Next, in the manufacturing system 10 of the optical device including the light shielding body, the substrate 2 is transferred to the catalyst adsorption layer forming portion 13 by the substrate transfer arm 11. Further, in the catalyst adsorption layer forming portion 13, for example, Pd ions serving as a catalyst are adsorbed on the metal layer 21 provided on the bottom surface of the concave portion 2a of the substrate 2, and the catalyst adsorption layer 22 is formed (see FIG. 11 ( b)).

As the catalyst adsorption treatment, for example, a treatment may be employed in which a palladium chloride aqueous solution is sprayed onto the substrate 2 by a nozzle, and Pd ions serving as a catalyst are adsorbed on the bottom surface of the concave portion 2a of the substrate 2. Specifically, a tin chloride solution is sprayed onto the substrate 2, and tin ions are adsorbed on the bottom surface of the concave portion 2a of the substrate 2. Next, a palladium chloride aqueous solution is sprayed onto the substrate 2, and tin ions are replaced by Pd ions to adsorb Pd ions. Further, sodium hydroxide is sprayed onto the substrate 2 to remove excess tin ions.

Further, an adhesion layer forming portion may be provided in the front stage of the catalyst adsorption layer forming portion 13, and a coupling agent such as a decane coupling agent may be adsorbed on the bottom surface of the concave portion 2a in the adhesion layer forming portion, and the concave portion 2a in the substrate 2 may be formed. The bottom surface forms an adhesive layer (SAM treatment). The adhesion layer formed by adsorbing the decane coupling agent improves the adhesion between the catalyst adsorption layer 22 and the bottom surface of the concave portion 2a of the substrate 2.

Then, the substrate 2 on which the catalyst adsorption layer 22 is formed on the metal layer 21 on the bottom surface of the concave portion 2a is transferred from the catalyst adsorption layer forming portion 13 to the inside of the burned portion 15 by the substrate transfer arm 11. Further, in the sealed casing of the burn-in portion 15, the substrate 2 is heated on a hot plate in an inert atmosphere filled with N ₂ gas in order to suppress oxidation. As a result, the catalyst adsorption layer 22 of the substrate 2 is baked (Bake treatment). The moisture in the catalyst adsorption layer 22 is released outward by burning the catalyst adsorption layer 22 as described above.

In this manner, in the burn-in portion 15, after the catalyst adsorption layer 22 on the bottom surface of the concave portion 2a of the substrate 2 is baked, the substrate 2 is transferred to the plating layer forming portion 14 by the substrate transfer arm 11.

Next, in the plating layer forming portion 14, a plating layer 23 containing Co or a Co alloy is formed on the catalyst adsorbing layer 22 of the substrate 2 (see FIG. 11(c)).

In this case, the plating layer forming portion 14 is constituted by a plating processing apparatus as shown in FIGS. 5 and 6, and can be formed by the catalyst adsorption layer 22 formed on the bottom surface of the concave portion 2a of the substrate 2. A plating layer 23 containing Co or a Co alloy is formed by applying an electroless plating treatment. The plating layer 23 is grown upward from the catalyst adsorption layer 22 formed on the bottom surface of the concave portion 2a of the substrate 2, and the entire region of the concave portion 2a is filled with the plating layer 23.

In the case where the plating layer 23 is formed in the plating layer forming portion 14, as the plating liquid, for example, a plating liquid containing Co-WB can be used, and the temperature of the plating solution is maintained at 40 to 75. °C (preferably 65 ° C).

By supplying a plating solution containing Co-WB to the substrate 2, the catalyst adsorption layer 22 formed on the bottom surface of the concave portion 2a of the substrate 2 is formed by electroless plating to form Co-WB. Plating layer 23.

Next, the substrate 2 on which the plating layer 23 is formed on the catalyst adsorbing layer 22 is again transferred from the plating layer forming portion 14 to the burning portion 15 by the substrate carrying arm 11, and by the burning portion 15. The plating layer 23 is baked.

By depositing the plating layer 23 on the substrate 2 in this manner, the moisture in the plating layer 23 can be released outward, and the intermetallic bonding in the plating layer 23 can be simultaneously improved.

In this way, the plating layer 23 can be filled in the concave portion 2a of the substrate 2, and the light shielding body 23A can be obtained by the plating layer 23. Further, the light-shielding body 23A that protrudes upward from the concave portion 2a of the substrate 2 can be obtained by further growing the plating layer 23 buried in the concave portion 2a.

Further, in each of the above-described embodiments and modifications, the solid-state image sensor is an example of an optical device including a light-blocking body. However, the present invention is not limited thereto, and for example, an LED, a color filter, and a light-shielding body may be used. A display device with a touch panel is used as an optical device including a light blocking body.

Further, in the above-described embodiment, the plating layer forming portion 14 and the burning portion 15 are separately formed by separate devices. However, the present invention is not limited thereto, and the plating layer forming portion shown in FIG. 8 may be used. In the case of the substrate 2, a heating source such as a lamp irradiation unit 200 (such as UV light) or a heating plate (not shown) covering the substrate 2 is provided, and the plating layer is baked in the plating layer forming portion 14. .

Claims (2)

A manufacturing method of an optical device including a light shielding body, comprising: a process of preparing a substrate having a concave portion; and applying a plating liquid containing Co-WB to the substrate having the concave portion In the electroless plating treatment, a structure in which a light-shielding body including a plating layer containing Co-WB is protruded from the inside of the concave portion and formed by a plating layer containing Co-WB is formed, and the thickness of the light-shielding body through which light passes is formed. The thickness of the light-shielding body is 50 to 100 nm, and the transmittance of red light, green light, and blue light is less than 1%. A memory medium storing a computer program for causing a manufacturing system of an optical device including a light shielding body to execute a manufacturing method of the optical device, the memory medium, characterized in that the optical device is manufactured by: preparing a concave portion The substrate is formed and the electroless plating treatment is applied to the plating liquid containing Co-WB on the substrate having the concave portion, so as to protrude from the inside of the concave portion toward the outside of the substrate, and In the project of the light-shielding body including the plating layer of Co-WB, the thickness of the light-shielding body through which the light passes is 50 to 100 nm, and the transmission of red light, green light, and blue light in the thickness of the light-shielding body Rate is less than 1%.