JP2003282851A - Method for manufacturing charge-coupled device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method capable of burying an inside of an opening for a guide path at a uniform film thickness without causing a void with an excellent burying characteristic, thereby raising an imaging characteristic of a charge-coupled device. <P>SOLUTION: The method for manufacturing the charge-coupled device comprises steps of forming an interlayer insulating film 102 on a substrate 101 provided with a light-receiving part 101a, forming an opening 102a in a part of the interlayer insulating film 101 on the light-receiving part 101a, and forming a light permeable material film 202 on the interlayer insulating film 102a in a state of burying an inside of the opening 102a. A guide path 203 obtained by burying the inside of the opening 102a with the light permeable material film 202 is formed on the light-receiving part 101a. In the step of forming the light permeable material film 202, a mist of a solution obtained by dissolving a light permeable material is supplied to a film forming plane to form a liquid film, and next this liquid film is fired. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a solid-state imaging device, and more particularly to a method for manufacturing a solid-state imaging device having a waveguide on a light receiving portion.

[0002]

2. Description of the Related Art In order to further increase the number of pixels and the miniaturization of a solid-state image pickup device, it is essential to improve the aperture ratio, that is, the sensitivity. For this reason, for example,
As disclosed in Japanese Patent Laid-Open No. 139300, by providing a waveguide on the light receiving portion on the surface of the substrate and providing an on-chip lens on the waveguide, the light condensed by the on-chip lens is obtained. Has been devised so that the light can be efficiently incident on the light receiving portion.

In the method of manufacturing such a solid-state image pickup device, first, as shown in FIG. 6A, a conductive material such as a transfer electrode is formed on a substrate 101 on which light receiving portions 101a are arrayed via an interlayer insulating film 102. The patterns 103a to 103c are stacked and formed by the interlayer insulating film 102 to form the conductive pattern 103a.
˜103c are embedded. Next, an opening 102a for a waveguide is formed in this interlayer insulating film 102 to expose the light receiving portion 101a. Then, as shown in FIG. 6B, CVD
The opening 102 is formed by a (chemical vapor deposition) method, a spin coating method or a sol-gel method.
A transparent material film 105 is formed in a state where the inside of a is embedded, and a waveguide 105a in which the transparent material film 105 is embedded is formed in the opening 102a. At this time, for the transparent material film 105, for example, a transparent material having a refractive index higher than that of the interlayer insulating film 102 is used. When the transparent material film 105 is formed by the CVD method, the film may be formed a plurality of times so that the refractive index becomes lower toward the upper layer. Next, as shown in FIG. 6C, the transparent material film 105 on the interlayer insulating film 102 is removed leaving the transparent material film 105 to be the waveguide 105a only in the opening 102a, and the color filter 106 and the on-chip are removed. The lens 107 is formed.

[0004]

However, the above-mentioned method for manufacturing the solid-state image pickup device has the following problems.
That is, with the method of filling the inside of the opening of the waveguide by the CVD method, it is not possible to sufficiently fill the inside of the opening for the waveguide in which the aspect ratio has been increased with the reduction of the pixel area. That is, since the CVD method is not a film-forming method with good step coverage, as shown in FIG. 7, the film-forming film thickness at the opening shoulder portion of the waveguide opening 102a is larger than that at other portions. It is easy to be thick. Therefore, when the opening 102a having a high aspect ratio is filled with the transparent material film 105, a void called a void A is generated in the opening 102a,
The irregular reflection at the void A causes a problem that the light collection rate on the light receiving unit 101a, that is, the sensitivity is lowered.

On the other hand, in the method of filling the inside of the opening for the waveguide by the spin coating method, it is known that although the filling characteristic in the opening is good, the film thickness of the film is radially uneven on the substrate surface. . Such unevenness of the film thickness affects the image pickup characteristics of the solid-state image pickup device and is a factor that causes deterioration of the image pickup characteristics generally called "sweep unevenness".

Furthermore, it is difficult to obtain high film thickness uniformity even with a film forming method involving a solution-like material coating step such as a sol-gel method other than the above-mentioned spin coating method, which causes deterioration of imaging characteristics. It is not practical because it causes a factor.

Therefore, the present invention provides a manufacturing method capable of filling the inside of the opening for the waveguide with a uniform film thickness and without causing voids with good filling characteristics. The purpose is to improve.

[0008]

A method of manufacturing a solid-state image pickup device according to the present invention for achieving the above object includes a light-transmitting material film in a state where a waveguide opening formed in an insulating film is filled. At the time of forming the so-called "L", a mist of a solution in which a light-transmitting material is dissolved is supplied to the film-forming surface to form a liquid film.
SMCD (Liquid Source Misted Chemical Depositio)
The method is characterized in that after performing the method n), the liquid film is baked to obtain a light transmissive material film.

According to such a manufacturing method, the liquid film of the solution in which the light transmissive material is dissolved is formed on the insulating film having the opening, and this liquid film has its own surface tension. Since the surface area is reduced by the above, the film thickness is thin in the upper shoulder portion of the opening and thick in the lower corner portion of the opening. Therefore, the liquid film is formed so that the step coverage is excellent, that is, the opening upper portion is filled in the opening without being overhanged, and the light transmission material film formed by firing the liquid film is formed. become. In addition, the solution that forms the liquid film is supplied as mist (fog), so by adjusting the mist diameter according to the diameter of the opening, the step coverage is maintained by following the miniaturization of the opening. The film formation is performed. Furthermore, since a mist of the solution is adhered to the film-forming surface to form a liquid film, it is a so-called deposited film, so that the film-forming surface has better uniformity than the coating film.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION A method for manufacturing a solid-state image pickup device according to the present invention will be described in detail below with reference to the drawings. In the prior art, the same components as those described with reference to FIG. 6 are designated by the same reference numerals and will be described.

First, as shown in FIG. 1A, a surface layer of a substrate 101 made of a semiconductor material such as single crystal silicon
The light receiving portion 101a, and further, a diffusion layer which constitutes a charge transfer portion, a channel stop layer, etc., which are not shown here, are patterned as required. Then this board 1
01 and the conductive pattern 103 via the interlayer insulating film 102.
a to 103a are laminated. At this time, first, the substrate 10
An interlayer insulating film 102 is formed on the first layer 1, and then a first-layer conductive pattern 103a is formed. After that, the interlayer insulating film 1
02, the second-layer conductive pattern 103b, the interlayer insulating film 102, the third-layer conductive pattern 103c, and the interlayer insulating film 102 are formed in this order. Thereby, the conductive pattern 1 is formed on the substrate 101.
Transfer electrodes made of 03a to 103c and other wirings are formed. If necessary, the uppermost conductive pattern 103c may be formed as a light-shielding film. Then, the conductive patterns 103a to 103c are filled with the interlayer insulating film 102.

Incidentally, these conductive patterns 103a-10
The pattern 3c is formed so as not to be arranged on the light receiving unit 101a. In addition, the interlayer insulating film 1
02 is formed using, for example, a silicon oxide-based material containing silicon oxide or impurities, and is formed of a conductive pattern 103a.
-10 c are formed by using a metal material such as aluminum or polysilicon.

After the above, an opening 102a for a waveguide is formed in the interlayer insulating film 102 portion on the light receiving portion 101a.
The opening 102a preferably has an opening shape that widens the light receiving portion 101a, and the depth thereof depends on the film thickness of the interlayer insulating film 102 on the substrate 101. Here, as an example, it is assumed that the light receiving unit 101a has an opening diameter of 1 μmφ and a depth of about 5 μm.
Here, the opening shape of the opening 1202a may be a forward taper shape if necessary.

The opening 102a is formed by etching using a resist pattern formed by a lithography method as a mask (for example, RIE: reactive ion).
It is formed on the light receiving portion 101a by etching.
During this etching, the interlayer insulating film 1 is formed so that the light receiving portion 101a is not damaged by etching.
02 may be left in the form of a thin film. In this case, the interlayer insulating film 1
It is effective to provide an insulating material film having a good light-transmitting property, which serves as an etching stopper, in the lower layer portion of 02.

As described above, the opening 102 for the waveguide is used.
After forming a, in a state of covering the inner wall of the opening 102a,
A silicon nitride film 201 is formed by plasma CVD method. The silicon nitride film 201 is for the purpose of ensuring moisture resistance and preventing the generation of white spots by stabilizing the interface state by supplying hydrogen from the silicon nitride film 201, and has a thickness of about 100 nm. Form with a thick thickness.

The steps described below are steps characteristic of the present invention. That is, in the following steps, a step of forming a waveguide in which a light transmissive material is embedded in the opening 102a is performed. At this time, film formation is performed by applying the LSMCD method.

First, as shown in FIG. 1 (2),
On the silicon nitride film 106, the first layer light-transmitting material film 202a is formed. In forming the light-transmitting material film 202a, first, a liquid film is formed by supplying a solution in which the light-transmitting material is dissolved into a mist-like mist to the film formation surface by the SLMCD method. Next, the solvent and the unstable components in the liquid film are decomposed and removed, and the baking is performed to promote the reaction between the components to form a stable compound material, thereby obtaining the light transmissive material film 202a.

Then, by repeating the above-mentioned liquid film formation and its firing a plurality of times, as shown in FIG.
A light transmissive material film 202 is formed by laminating a plurality of light transmissive material films 202a on and after the layer, and a waveguide 203 is formed by filling the inside of the opening 102a with the light transmissive material film 202.

Here, it is assumed that the mist supplied to the film formation surface when forming the liquid film has a diameter small enough to be supplied to the bottom of the opening 102a. For example,
When the opening diameter of the opening 102a is about 1 μm,
The diameter of the mist m is set to 0.2 μm or less and supplied.

The thickness of the liquid film (each light-transmitting material film 20)
The film thickness of 2a) and the baking temperature are appropriately set so that the light transmissive material film 202 formed by baking the liquid film will not be cracked or the like and can be baked in a shorter time. . In addition, the firing temperature is set to a range that does not affect the material already formed on the substrate 101. For example, when an aluminum pattern is used as the conductive patterns 103a to 103c formed on the substrate 101, the firing temperature is set to be 400 ° C. or lower. When the conductive patterns 103a to 103c are made of polysilicon and the aluminum pattern is not used, the firing temperature is 1.
It shall be set in the range of 000 ° C or lower.

Here, in the drawing, the light transmissive material film 20 is formed by a laminated body of six light transmissive material films 202a.
Although the case where 2 is formed is shown, the number of stacked light-transmitting material films 202 is not limited to this. The layer structure of the light transmissive material film 202 is determined in consideration of the opening diameter of the opening 102a and the productivity when forming each light transmissive material film 202a, and the number of stacked layers that completely fills the opening 102a is determined. To be done. Therefore, the opening may be filled with the single layer of the light-transmitting material film 202a.

The light-transmitting material film 202 (202a)
Is a silicon nitride film 10 that covers the surface of the interlayer insulating film 105.
A material having a refractive index higher than 6 is used. Further, a compound that can form a solution for forming such a light-transmitting material film 202, and the compound that forms the light-transmitting material film 202 after the above-mentioned baking has a light-transmitting property and is a silicon nitride film. It suffices if the refractive index is higher than 106.

Specific examples of the compound forming the light transmissive material film 202 include oxides of titanium (Ti), indium (In), tin (Sn), tantalum (Ta), zinc (Zn) and the like. A material appropriately selected from the above can be used. When these elements are formed into a thin film as an oxide, they can satisfy optical characteristics required in a desired solid-state imaging device such as transmittance and refractive index in the visible light region. It is also important to secure the purity of the material in order to obtain the optical characteristics. Further, in addition to the above-mentioned oxides, the light transmissive material film 202 can be formed by using a material used for ordinary spin coating.

The solvent that constitutes the solution that becomes the mist is appropriately selected depending on the material of the light transmissive material film 202, and for example, an organic solvent such as toluene is used.

Further, when the light transmissive material film 202 is formed by laminating a plurality of light transmissive material films 202a, it is not necessary that all the light transmissive material films 202a are made of the same compound. In this case, in the film formation of the lower layer portion at the very initial stage, the compound of each light transmissive material film 202a is selected so that the refractive index becomes higher toward the upper layer. As a result, even the light obliquely incident on the surface of the light receiving unit 101a can be efficiently condensed in the shape of the light receiving unit 101a.

Here, the formation of the liquid film using the mist of the solution as described above, that is, the film formation of the liquid film by the SLMCD method, can be performed using the film formation module 1 described with reference to FIG. 2, for example. it can.

This film forming module 1 includes a film forming chamber 1
a, a solution tank 1b, and a supply pipe 1c for supplying the solution L in the solution tank 1b into the film forming chamber 1a. Then, the supply pipe 1c limits the particle size of the aspirator 1d for making the solution L supplied from the solution tank 1b into a mist mist m, and the mist m formed by the aspirator 1d (for example, 0.2 μmφ or less). The demister 1e for doing so is provided in this order from the solution tank 1b side.

In the film forming chamber 1a, the film forming process is performed, for example, at room temperature and atmospheric pressure with the substrate 101 housed inside. A stage 1f for mounting the substrate 101 housed therein is provided in the film forming chamber 1a, and a diffusion plate 1g is arranged to face the stage 1f. In addition, the stage 1f is composed of the substrate 101 placed on top of it.
Is configured to be applied with a DC voltage.
A supply pipe 1c is connected to the film formation chamber 1a on the opposite side of the stage 1f via a diffusion plate 1g.
The mist m, which is limited to a predetermined particle size or less by the demister 1e, is supplied into the film forming chamber 1a, passes through the diffusion plate 1g, and is evenly supplied to the surface of the substrate 101.

When the film forming module 1 is used, the solution L in which the material for forming the light transmissive material film is dissolved is stored in the solution tank 1b. Then, of the mist m of the solution L formed by the aspirator 1d, the mist m having a large particle size is captured by the demister 1e, and only the mist m having a particle size of 0.2 μmφ or less is supplied into the film forming chamber 1a. A positive DC voltage of 8 kV is applied to the substrate 101 housed in the film forming chamber 1a from the stage 1f.

As a result, the mist m having a particle size of 2 μmφ or less is negatively charged by the friction caused by the movement in the supply pipe 1c.
Can be attracted to the positively charged substrate 101 side to efficiently form a liquid film.

The film forming module 1 described above may be configured as a part of a multi-chamber type film forming apparatus.

FIG. 3 is a plan view showing an overall image of a multi-chamber type film forming apparatus in which the film forming module 1 is incorporated. The film forming apparatus shown in this figure is a transfer robot 2a.
The film forming chamber 1a of the film forming module 1 described above is connected to the transfer chamber 2 in which the film is formed. In addition to the film forming module 1, a substrate loading chamber 3, a substrate unloading chamber 4, a low temperature heating / baking chamber 5, a high speed heating / baking chamber 6, and a centering chamber 7 are connected to the transfer chamber 2. Also,
An opening / closing door is provided between the transfer chamber 2 and each chamber,
The inside of each of the chambers 1 to 7 is configured to be maintained in an independent atmosphere.

Using this film forming apparatus, as shown in FIG.
When forming the light transmissive material film 202 described in (3), first, a plurality of substrates 101 on which the silicon nitride film 206 described with reference to FIG. 1A has been completed are held in a cassette. The substrate is stored in the substrate loading chamber 3 in the state of being kept. Next, the substrate 101 in the substrate loading chamber 3 is loaded into the centering chamber 7 by the transport robot 2a in the transport chamber 2, and the center of the substrate 101 is aligned.

Then, the substrate 101 is placed on the film forming module 1
The film is deposited in the film forming chamber 1a, and the above-described liquid film is formed.
After that, the substrate 101 is loaded into the low-temperature heating / baking chamber 5 or the high-speed heating / baking chamber 6, and the liquid film covering the upper surface of the substrate 101 is baked at a predetermined heating temperature.
To form. After that, the substrate 101 is reciprocated between the inside of the film forming chamber 1a of the film forming module 1 and the inside of the low temperature heating / baking chamber 5 or the high speed heating / baking chamber 6 so that the plurality of film forming surfaces are not exposed to the outside air. Layer of light-transmissive material film 202a is formed to fill the opening 102a.
02 can be formed.

As described above, the light transmissive material film 202
Then, as shown in FIG. 4A, the opening 102 is formed.
The light transmissive material film 20 on the interlayer insulating film 102 is formed so that the light transmissive material film 202 remains as the waveguide 203 only in a.
Two portions are removed by CMP (Chemical Mechanical Polishing) method or etch back method.

Thereafter, a flattening insulating film is formed if necessary, and then, as shown in FIG. 4B, each light receiving portion 101.
A color filter 106 and an on-chip lens 107 are formed above the interlayer insulating film 102 corresponding to a, and the solid-state imaging device is completed.

According to the above manufacturing method, as shown in FIG.
As described using (3), the liquid film of the solution in which the light transmissive material is dissolved is formed by the SLMCD method on the interlayer insulating film 102 in which the opening 102a is formed.
Since this liquid film tries to reduce the surface area by its own surface tension, the film thickness is thin in the upper shoulder portion of the opening 102a and thick in the lower corner portion of the opening 102a. Therefore, the liquid film and the light-transmitting material film 202a formed by baking the liquid film have good step coverage, that is, the opening 1 does not have an overhang state at the upper portion of the opening.
It is formed so that the inside of 02a is embedded. Further, since the solution forming the liquid film is supplied to the film-forming surface in a mist state (fog), it is possible to reduce the size of the opening 102a by adjusting the diameter of the mist according to the diameter of the opening 102a. Following this, film formation is performed while maintaining the step coverage.

Further, in the SLMCD method, a mist is adhered to the film-forming surface to form a liquid film. Therefore, the liquid film and the light-transmitting material film 202a obtained by firing the liquid film are so-called deposited films, and coating films. The uniformity of the film thickness on the film formation surface is better than that of. Moreover, since the film-forming surface is not damaged by the film-forming, there is no concern that the characteristics of the film-forming may be changed.

Therefore, the inside of the opening 102a for the waveguide can be embedded with a uniform film thickness and without generating voids with a good embedding characteristic, so that a solid-state image pickup device having an excellent image pickup characteristic can be obtained. It will be possible.

(Second Embodiment) In the manufacturing method of the second embodiment, before the formation of the light transmissive material film 202 in the manufacturing method described in the above-described first embodiment, the film forming surface This is a method of performing a treatment step, and other steps are the same as those in the first embodiment.

That is, after the silicon nitride film 201 described with reference to FIG. 1A is formed, FIGS.
Before forming the light transmissive material film 202 described with reference to 1., the film formation surface of the light transmissive material film 202 (here, the surface of the silicon nitride film 201) is treated with at least one of oxygen plasma and nitrogen plasma. Perform pre-processing. This pretreatment is performed by exposing the film formation surface to at least one of oxygen plasma and nitrogen plasma.

Further, this pretreatment is performed by the light transmitting material film 20.
It may be carried out each time each of the light transmissive material films 202a constituting No. 2 is formed. In this case, each of the light transmissive material films 202a is formed.
The same pretreatment is also applied to the surface of.
However, when the light transmissive material film 202 is formed by one-time film formation, this pretreatment is performed by the silicon nitride film 20.
Only one surface will be applied.

By carrying out such a pretreatment, the wettability of the film-forming surface is improved, and the mist of the solution using an organic solvent as a solvent is rapidly spread and connected on the film-forming surface to form a uniform and thin film thickness. It becomes possible to form a liquid film of. In other words, when the film surface has low wettability, the surface tension of the mist itself causes the mist supplied to the film surface to remain in a hemispherical shape, resulting in the formation of a discontinuous liquid film with inconvenient characteristics. It will be easier. In order to avoid the formation of such a discontinuous film, a thick liquid film is formed, but in such a case, the thick film thickness is a constraint on film formation, which is not preferable. .

When such a pretreatment is performed every time a plurality of light-transmitting material films 202a forming the light-transmitting material film 202 are formed, the structure described with reference to FIG. 3 is used. It is preferable that the multi-chamber is provided with a pretreatment chamber for performing the above-mentioned pretreatment by the plasma treatment, which is connected to the transfer chamber 2. Thereby, the light transmissive material film 202 can be formed without exposing the film formation surface to the outside air, and the light transmissive material film 202 with high purity can be formed.

(Third Embodiment) In the manufacturing method of the third embodiment, the light-transmitting material film 202 in the manufacturing method described in the first embodiment and the light-transmitting material by the CVD method are formed. It is assumed that the method is carried out by combining and, and other steps are the same as those in the first embodiment.

That is, after forming the silicon nitride film 201 described with reference to FIG. 1A, as shown in FIG. 5A, the same SLMCD method as that described in the first embodiment is applied. A plurality of layers or a single layer (three layers in the drawing) of the light transmissive material film 202a is formed by a film method, and the inside of the opening 102a is embedded to a certain depth. Next, as shown in FIG. 5B, the light transmissive material film 202b is further formed on the light transmissive material film 202a by the CVD method.
To form. Then, a light transmissive material film 202 ′ having a light transmissive material film 202a applied with the SLMCD method as a lower layer part and a light transmissive material film 202b applied with the CVD method as an upper layer part
Is formed, and the inside of the opening 102a is filled with this light transmitting material film 202 '.

When the light transmissive material film 202 'is formed by combining different film forming methods in this manner, the SLMC
By forming the lower layer portion of the light transmissive material film 202 by applying the D method, the inside of the opening 102a is sufficiently filled without forming voids, and the light transmissive material film 20 is formed by the CVD method.
By forming the upper layer portion of 2, the film formation rate can be secured. Therefore, in addition to the effect of the first embodiment, an effect of improving productivity can be expected.

The light transmissive material films 202a and 20b forming the light transmissive material film 202 'do not need to be the same compound, and in the film formation of the lower layer portion at the very initial stage, the refractive index of the upper layer is higher. You may select and use a different compound so that it may become low. As a result, even the light obliquely incident on the surface of the light receiving unit 101a can be efficiently received.
The light is focused in a shape.

[0049]

As described above, according to the method of manufacturing the solid-state image pickup device of the present invention, the light transmissive material film is embedded in the opening for the waveguide by using the SLMCD method of forming the liquid film by supplying the mist. By adopting a structure for performing film formation for the purpose of the above, it becomes possible to form a light-transmitting material film having good step coverage by using the surface tension of the liquid film, and to form a film as compared with a coating film. It becomes possible to secure the uniformity of the film thickness on the surface. Therefore, it is possible to fill the inside of the opening for the waveguide with a uniform film thickness and without generating voids with good filling characteristics, and it is possible to obtain a solid-state imaging device with good imaging characteristics.

[Brief description of drawings]

FIG. 1 is a sectional process diagram (1) illustrating the method for manufacturing the solid-state imaging device according to the first embodiment.

FIG. 2 is a configuration diagram of a film forming module for forming a film by the LSMCD method.

3 is a plan view of a film forming apparatus provided with the film forming module of FIG.

FIG. 4 is a sectional process diagram (2) illustrating the method for manufacturing the solid-state imaging device according to the first embodiment.

FIG. 5 is a cross-sectional process diagram illustrating the method of manufacturing the solid-state imaging device according to the third embodiment.

FIG. 6 is a cross-sectional view for explaining a conventional method for manufacturing a solid-state imaging device.

FIG. 7 is a cross-sectional view for explaining an example of the problem of the conventional technique.

[Explanation of symbols]

101 ... Substrate, 101a ... Light receiving part, 102 ... Interlayer insulating film, 102a ... Opening part, 202, 202 ′, 202a,
202b ... Light transmissive material film, 203 ... Waveguide, m ... Mist

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 4M118 AA01 AB01 BA09 CA02 CA32                       CA33 CA34 EA20 GA09 GC07                       GD04                 5F088 AB03 BA01 BA18 BB03 CB14                       CB20 EA04 GA04 HA05 HA12                       HA20

Claims (4)

[Claims] 1. A step of forming an insulating film on a substrate having a light receiving portion, a step of forming an opening in the insulating film portion on the light receiving portion, and a step of filling the inside of the opening with the insulating film. A step of forming a light-transmissive material film on the light-transmitting material film, and forming a waveguide on the light-receiving part, the waveguide having the opening filled with the light-transmissive material film. In the step of forming a material film, a mist of a solution in which a light transmissive material is dissolved is supplied to a film formation surface to form a liquid film, and then the liquid film is baked, which is a manufacturing method of a solid-state imaging device. Method. 2. The method for manufacturing a solid-state imaging device according to claim 1, wherein a pretreatment step of treating the film formation surface with at least one of oxygen plasma and nitrogen plasma before the step of forming the light transmissive material film. A method for manufacturing a solid-state imaging device, comprising: 3. The method for manufacturing a solid-state imaging device according to claim 1, wherein the step of forming the light-transmitting material film is repeated a plurality of times. 4. The method for manufacturing a solid-state imaging device according to claim 1, wherein in the step of forming the light transmissive material film, a mist of a solution in which the light transmissive material is dissolved is supplied to the film formation surface. A film is formed, and then the liquid film is baked to form a lower layer portion of the light transmissive material film, and then an upper layer portion of the light transmissive material film is formed by a chemical vapor deposition method. Solid-state image pickup device manufacturing method.