TWI624735B - 檢測裝置、曝光裝置及製造裝置的方法 - Google Patents

檢測裝置、曝光裝置及製造裝置的方法 Download PDF

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Publication number
TWI624735B
TWI624735B TW105139932A TW105139932A TWI624735B TW I624735 B TWI624735 B TW I624735B TW 105139932 A TW105139932 A TW 105139932A TW 105139932 A TW105139932 A TW 105139932A TW I624735 B TWI624735 B TW I624735B
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TW
Taiwan
Prior art keywords
light
polarized light
detected
reflected
polarized
Prior art date
Application number
TW105139932A
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English (en)
Chinese (zh)
Other versions
TW201734653A (zh
Inventor
前田浩平
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201734653A publication Critical patent/TW201734653A/zh
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Publication of TWI624735B publication Critical patent/TWI624735B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW105139932A 2015-12-25 2016-12-02 檢測裝置、曝光裝置及製造裝置的方法 TWI624735B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-253117 2015-12-25
JP2015253117A JP6682263B2 (ja) 2015-12-25 2015-12-25 検出装置、露光装置および物品の製造方法

Publications (2)

Publication Number Publication Date
TW201734653A TW201734653A (zh) 2017-10-01
TWI624735B true TWI624735B (zh) 2018-05-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW105139932A TWI624735B (zh) 2015-12-25 2016-12-02 檢測裝置、曝光裝置及製造裝置的方法

Country Status (4)

Country Link
JP (1) JP6682263B2 (enExample)
KR (1) KR102076885B1 (enExample)
CN (1) CN106919005B (enExample)
TW (1) TWI624735B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6891066B2 (ja) * 2017-07-19 2021-06-18 株式会社ミツトヨ 光学式測定装置
JP2019032378A (ja) * 2017-08-04 2019-02-28 株式会社オーク製作所 基板位置検出装置、露光装置および基板位置検出方法
US11309202B2 (en) * 2020-01-30 2022-04-19 Kla Corporation Overlay metrology on bonded wafers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2128701A1 (en) * 2008-05-30 2009-12-02 ASML Netherlands BV Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process
EP2463715B1 (en) * 2005-07-08 2015-06-10 Nikon Corporation Surface position detection apparatus, exposure apparatus, and exposure method
WO2015101461A2 (en) * 2013-12-30 2015-07-09 Asml Netherlands B.V. Method and apparatus for design of a metrology target
WO2015185166A1 (en) * 2014-06-02 2015-12-10 Asml Netherlands B.V. Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0922868A (ja) * 1995-07-06 1997-01-21 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
KR100242983B1 (ko) * 1996-10-28 2000-02-01 김영환 2중 반사를 이용한 오토포커싱시스템
JP2004273828A (ja) * 2003-03-10 2004-09-30 Nikon Corp 面位置検出方法、面位置検出装置、合焦装置、露光装置及びデバイスの製造方法
JP4440688B2 (ja) * 2004-03-31 2010-03-24 Ｈｏｙａ株式会社 レーザ描画装置、レーザ描画方法及びフォトマスクの製造方法
JP2009206373A (ja) * 2008-02-28 2009-09-10 Canon Inc 露光装置及びデバイス製造方法
JP5084558B2 (ja) * 2008-02-28 2012-11-28 キヤノン株式会社 表面形状計測装置、露光装置及びデバイス製造方法
JP5198980B2 (ja) * 2008-09-02 2013-05-15 株式会社モリテックス 光学異方性パラメータ測定方法及び測定装置
JP2011226939A (ja) * 2010-04-21 2011-11-10 Hitachi High-Technologies Corp 基板検査方法及び装置
JP5905729B2 (ja) * 2011-10-26 2016-04-20 Dmg森精機株式会社 変位検出装置
JP6025346B2 (ja) * 2012-03-05 2016-11-16 キヤノン株式会社 検出装置、露光装置及びデバイスを製造する方法
CN103529650B (zh) * 2012-07-02 2016-01-20 上海微电子装备有限公司 一种高度测量装置及其测量方法
CN104635428B (zh) * 2013-11-14 2017-06-27 上海微电子装备有限公司 一种基于图像处理的调焦调平测量装置和方法
CN104849964B (zh) * 2014-02-14 2017-08-25 上海微电子装备（集团）股份有限公司 一种焦面测量装置及其测量方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2463715B1 (en) * 2005-07-08 2015-06-10 Nikon Corporation Surface position detection apparatus, exposure apparatus, and exposure method
EP2128701A1 (en) * 2008-05-30 2009-12-02 ASML Netherlands BV Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process
WO2015101461A2 (en) * 2013-12-30 2015-07-09 Asml Netherlands B.V. Method and apparatus for design of a metrology target
WO2015185166A1 (en) * 2014-06-02 2015-12-10 Asml Netherlands B.V. Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method

Also Published As

Publication number Publication date
CN106919005B (zh) 2020-04-07
CN106919005A (zh) 2017-07-04
KR102076885B1 (ko) 2020-02-12
JP2017116769A (ja) 2017-06-29
KR20170077039A (ko) 2017-07-05
TW201734653A (zh) 2017-10-01
JP6682263B2 (ja) 2020-04-15

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