TWI619162B - Cooling method for processing indoor parts, cooling program for processing indoor parts, and memory medium - Google Patents
Cooling method for processing indoor parts, cooling program for processing indoor parts, and memory medium Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 205
- 238000001816 cooling Methods 0.000 title claims abstract description 58
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- 238000004891 communication Methods 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 4
- 238000003672 processing method Methods 0.000 claims 1
- 238000001312 dry etching Methods 0.000 abstract description 9
- 230000006870 function Effects 0.000 description 10
- 239000003507 refrigerant Substances 0.000 description 9
- 238000012423 maintenance Methods 0.000 description 7
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Abstract
本發明的課題是在於提供一種不使基板處理裝置的構成形成複雜，可迅速冷卻處理室內零件之處理室內零件的冷卻方法。 An object of the present invention is to provide a cooling method for a processing chamber component that can rapidly cool a processing chamber component without complicating the configuration of the substrate processing apparatus.
其解決手段是在對基板(G)實施乾式蝕刻處理的基板處理裝置(10)中，冷卻在由彼此可分離的基部(11a)及蓋部(11b)所構成的腔室(11)內配置的平台(12)時，將腔室(11)內的壓力調整成大氣壓，使蓋部(11b)從基部(11a)分離，而於腔室(11)的側壁部的全周形成開放部(11d)，使腔室(11)內及大氣連通，利用排氣系(14)在腔室(11)內形成氣流，當平台(12)的溫度被判定成60℃以下時，使排氣系(14)的作動停止，而令腔室(11)內的氣流停止。 The solution is to dispose the substrate (G) in a cavity (11) formed by a base portion (11a) and a lid portion (11b) cooled in a substrate processing device (10) that performs dry etching. When the platform (12) is formed, the pressure in the chamber (11) is adjusted to atmospheric pressure, so that the lid portion (11b) is separated from the base portion (11a), and an open portion is formed on the entire circumference of the side wall portion of the chamber (11) ( 11d), communicate the inside of the chamber (11) and the atmosphere, and use the exhaust system (14) to form an air flow in the chamber (11). When the temperature of the platform (12) is judged to be below 60 ° C, the exhaust system The operation of (14) is stopped, and the air flow in the chamber (11) is stopped.
Description
本發明是有關處理室內零件的冷卻方法，處理室內零件冷卻程式，及記憶媒體。 The invention relates to a cooling method for processing indoor parts, a cooling program for processing indoor parts, and a memory medium.
對基板實施所望的電漿處理例如乾式蝕刻處理的基板處理裝置是在被減壓的腔室(處理室)內所配置的平台(載置台)載置基板，在腔室內將基板暴露至由處理氣體所產生的電漿。因此，在電漿處理中，基板會從電漿受熱而溫度上昇，載置基板的平台也會藉由來自電漿的直接入熱或來自基板的熱傳達而溫度上昇。 The substrate processing apparatus that performs desired plasma processing on the substrate, such as dry etching, mounts the substrate on a platform (mounting table) disposed in the decompressed chamber (processing chamber), and exposes the substrate to the processing chamber in the chamber. Plasma produced by gas. Therefore, in the plasma processing, the substrate is heated from the plasma and the temperature is increased, and the platform on which the substrate is placed is also increased in temperature by direct heat input from the plasma or heat transfer from the substrate.
並且，近年來有將基板形成高溫而實施電漿處理的手法被開發，對應於此，平台是內藏加熱器，該加熱器是將平台加熱至260℃。 In addition, in recent years, a method of plasma processing the substrate at a high temperature has been developed. In response to this, the platform is a built-in heater, and the heater is used to heat the platform to 260 ° C.
可是，一般若重複電漿處理，則起因於處理氣體或基板上的處理對象物(例如氧化膜)的成分而生成的反應生成物會堆積於腔室內零件例如平台或淋浴頭，因此為了去除堆積後的反應生成物，必須定期地進行腔室內 零件的洗淨。又，由於電漿中的陽離子之濺射等，腔室內零件會消耗，因此必須定期性進行腔室內零件的更換。 However, in general, if plasma processing is repeated, reaction products generated due to components of a processing gas or a processing object (for example, an oxide film) on a substrate are accumulated in a chamber part such as a platform or a shower head. After the reaction products, must be regularly carried out in the chamber Wash the parts. In addition, due to the sputtering of cations in the plasma, the parts in the chamber are consumed, so the parts in the chamber must be replaced regularly.
為了進行基板處理裝置的腔室內零件的洗淨或更換，亦即進行維修，作業者必須從腔室內取出腔室內零件，但如上述般，因為腔室內零件成為高溫，所以必須考量作業者的安全，而於維修前冷卻腔室內零件。 In order to clean or replace the parts in the chamber of the substrate processing apparatus, that is, to perform maintenance, the operator must take out the parts in the chamber, but as mentioned above, because the parts in the chamber become high temperature, the safety of the operator must be considered , While cooling parts in the chamber before maintenance.
例如，在專利文獻1所示的載置台構造中，用以使冷媒流動於載置台的冷媒通路會形成於內部，在冷卻載置台時，可藉由在冷媒通路流動冷媒來比較快速冷卻。 For example, in the mounting table structure shown in Patent Document 1, a refrigerant passage through which the refrigerant flows through the mounting table is formed inside. When the mounting table is cooled, the cooling can be performed relatively quickly by flowing the refrigerant through the refrigerant path.
可是，近年來，有關上述使基板形成高溫來實施電漿處理的方面，藉由對處理基板時的順序下工夫，可只用加熱器等的加熱手段來控制溫度，因此具備內部不具冷媒通路的平台之基板處理裝置漸增。如此的基板處理裝置是在冷卻平台時，在腔室內導入大氣之後放置所定時間。此情況，平台的熱會朝所被導入的大氣傳達，藉此平台的溫度會降低。 However, in recent years, regarding the above-mentioned aspects of performing plasma processing on a substrate at a high temperature, the order in which the substrate is processed can be controlled, and the temperature can be controlled only by heating means such as a heater. Therefore, there is a platform without a refrigerant passage inside. The number of substrate processing equipment is increasing. In such a substrate processing apparatus, when the platform is cooled, it is left for a predetermined time after the atmosphere is introduced into the chamber. In this case, the heat of the platform will be transmitted toward the atmosphere to be introduced, thereby reducing the temperature of the platform.
〔專利文獻1〕日本特開2010-219354號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2010-219354
然而，朝所被導入的大氣傳達平台的熱的方法是隨著時間的經過，所被導入的大氣會藉由熱的傳達而溫度上昇，因此平台的熱的傳達效率會降低，對平台的冷卻需要長時間。 However, the method of transmitting the heat of the platform to the introduced atmosphere is that as time passes, the temperature of the introduced atmosphere rises through the transfer of heat. Therefore, the efficiency of the heat transfer of the platform will decrease and the platform will be cooled. It takes a long time.
為了促進平台的冷卻，雖也可考量在平台的內部形成冷媒通路，但基板處理裝置的構成會變得複雜，且成本會上昇。特別是因為維修的頻率並不那麼高，所以只為了維修前的冷卻而形成冷媒通路，其對價效果差。 In order to promote the cooling of the platform, the formation of a refrigerant passage in the platform may be considered, but the structure of the substrate processing apparatus becomes complicated and the cost increases. In particular, because the frequency of maintenance is not so high, a refrigerant passage is formed only for cooling before maintenance, which has a poor price effect.
本發明的目的是在於提供一種不使基板處理裝置的構成形成複雜，可迅速冷卻處理室內零件之處理室內零件的冷卻方法，處理室內零件冷卻程式，及記憶媒體。 An object of the present invention is to provide a cooling method for a processing room part, a cooling program for a processing room part, and a memory medium without complicate the formation of the substrate processing apparatus and capable of rapidly cooling the processing room part.
為了達成上述目的，請求項1記載的處理室內零件的冷卻方法，係於對基板實施所定的處理的基板處理裝置的處理室內配置的處理室內零件的冷卻方法，其特徵係具備：壓力調整步驟，其係將前述處理室內的壓力調整成大氣壓；處理室內開放步驟，其係將前述處理室的側壁部的至少一部分開放而使前述處理室內及大氣連通；氣流形成步驟，其係利用將前述處理室內排氣的排氣裝置來把前述大氣的流動形成於前述處理室內； 溫度判定步驟，其係判定前述處理室內零件的溫度是否為所定的溫度以下；及氣流停止步驟，其係於前述溫度判定步驟判定前述處理室內零件的溫度為所定的溫度以下時，停止前述排氣裝置的作動，而使前述大氣的流動停止。 In order to achieve the above object, the cooling method for a processing chamber component according to claim 1 is a cooling method for a processing chamber component disposed in a processing chamber of a substrate processing apparatus that performs a predetermined process on a substrate, and includes a pressure adjustment step. It is to adjust the pressure in the processing chamber to atmospheric pressure; the opening step in the processing chamber is to open at least a part of the side wall portion of the processing chamber to communicate the processing chamber and the atmosphere; and the air flow forming step is to use the processing chamber to open the processing chamber. An exhaust device for exhausting to form the flow of the atmosphere in the processing chamber; The temperature determination step is to determine whether the temperature of the parts in the processing chamber is below a predetermined temperature; and the airflow stopping step is to stop the exhaust when the temperature determination step determines that the temperature of the parts in the processing chamber is below a predetermined temperature. The operation of the device stops the aforementioned atmospheric flow.
請求項2記載的處理室內零件的冷卻方法，係於請求項1記載的處理室內零件的冷卻方法中，前述處理室內開放步驟係將前述處理室的側壁部予以連續性開放於全周。 The method for cooling parts in a processing chamber according to claim 2 is the method for cooling parts in a processing chamber according to claim 1, wherein the step of opening the processing chamber is to open the side wall of the processing chamber continuously throughout the entire circumference.
請求項3記載的處理室內零件的冷卻方法，係於請求項2記載的處理室內零件的冷卻方法中，前述處理室係由構成可分割的蓋部及基部所構成，在前述處理室內開放步驟中，前述蓋部係從前述基部分離，前述蓋部離前述基部的間距為40mm以上且100mm以下。 The method for cooling parts in a processing chamber according to claim 3 is a method for cooling parts in a processing chamber according to claim 2, wherein the processing chamber is composed of a cover and a base that are separable, and is opened in the processing chamber. The cover portion is separated from the base portion, and a distance between the cover portion and the base portion is 40 mm or more and 100 mm or less.
請求項4記載的處理室內零件的冷卻方法，係於請求項3記載的處理室內零件的冷卻方法中，前述蓋部自前述基部的分離係只藉由前述蓋部的移動，或前述基部的移動，或前述蓋部及前述基部的移動來實現。 The method for cooling a processing room part described in claim 4 is the method for cooling a processing room part described in claim 3, wherein the separation of the cover from the base is performed only by the movement of the cover or the movement of the base , Or the movement of the cover and the base.
請求項5記載的處理室內零件的冷卻方法，係於申請專利範圍第1~4項中的任一項所記載之處理室內零件的冷卻方法中，前述處理室內零件為載置前述基板且具有加熱機構的高溫載置台。 The cooling method of a processing indoor part described in claim 5 is a cooling method of a processing indoor part described in any one of claims 1 to 4 of the scope of application for a patent, wherein the processing chamber part is a substrate on which the substrate is placed and has heating High-temperature mounting table of the mechanism.
為了達成上述目的，請求項6記載的處理室內零件冷卻程式，係使處理室內零件的冷卻方法實行於電 腦的處理室內零件冷卻程式，該處理室內零件的冷卻方法係於對基板實施所定的處理的基板處理裝置的處理室內配置的處理室內零件的冷卻方法，其係具備：壓力調整步驟，其係將前述處理室內的壓力調整成大氣壓；處理室內開放步驟，其係將前述處理室的側壁部的至少一部分開放而使前述處理室內及大氣連通；氣流形成步驟，其係利用將前述處理室內排氣的排氣裝置來把前述大氣的流動形成於前述處理室內；溫度判定步驟，其係判定前述處理室內零件的溫度是否為所定的溫度以下；及氣流停止步驟，其係於前述溫度判定步驟判定前述處理室內零件的溫度為所定的溫度以下時，停止前述排氣裝置的作動，而使前述大氣的流動停止，其特徵為至少具有：處理室內開放模組，其係實行前述處理室內開放步驟；氣流形成模組，其係實行前述氣流形成步驟；溫度判定模組，其係實行前述溫度判定步驟；及氣流停止模組，其係實行前述氣流停止步驟。 In order to achieve the above-mentioned object, a cooling program for parts in a processing chamber as described in item 6 is required to implement a method for cooling parts in a processing chamber to be applied to electricity. A cooling program for parts in a processing chamber of a brain. The method for cooling parts in a processing chamber is a method for cooling parts in a processing chamber arranged in a processing chamber of a substrate processing apparatus that performs a predetermined process on a substrate. The pressure in the processing chamber is adjusted to atmospheric pressure; the processing chamber opening step is to open at least a part of the side wall portion of the processing chamber so as to communicate the processing chamber and the atmosphere; and the air flow forming step is to exhaust the processing chamber. An exhaust device for forming the flow of the atmosphere in the processing chamber; a temperature determination step for determining whether the temperature of the parts in the processing chamber is below a predetermined temperature; and an airflow stopping step for determining the processing in the temperature determination step When the temperature of the indoor parts is lower than a predetermined temperature, the operation of the exhaust device is stopped to stop the flow of the atmosphere, which is characterized by at least: an open module in the processing chamber, which implements the open step in the processing chamber; air flow formation Module, which performs the aforementioned airflow forming step Temperature determination module that determines a temperature-based implementation of the step; and a cessation of airflow module, which is based implementation of the air flow stop step.
請求項7記載的處理室內零件冷卻程式，係於請求項6記載的處理室內零件冷卻程式中，前述氣流形成模組係於前述處理室內開放模組實行前述處理室內開放步驟的期間，或實行之後，從前述處理室內開放模組叫出 來實行前述氣流形成步驟。 The processing indoor part cooling program described in claim 7 is the processing indoor part cooling program described in claim 6, wherein the airflow formation module is during or after the processing room opening module executes the processing chamber opening step. , Called from the open module in the aforementioned processing room To perform the aforementioned airflow forming step.
為了達成上述目的，請求項8記載的電腦可讀取的記憶媒體，其特徵為儲存請求項6或7記載的處理室內零件冷卻程式。 In order to achieve the above object, the computer-readable storage medium described in claim 8 is characterized by storing a cooling program for parts in the processing chamber described in claim 6 or 7.
若根據本發明，則在處理室內的壓力被調整成大氣壓之後，處理室的側壁部的至少一部分會被開放而連通處理室內及大氣，在處理室內形成大氣的流動，更換被傳達處理室內零件的熱之大氣，因此處理室內零件的周圍的大氣的溫度的上昇會被抑制，處理室內零件的熱的傳達效率的降低會被抑制。其結果，可快速冷卻處理室內零件。並且，為了處理室內零件的冷卻促進，不需要在處理室內零件的內部形成冷媒通路，因此不會有使基板處理裝置的構成形成複雜的情形。 According to the present invention, after the pressure in the processing chamber is adjusted to atmospheric pressure, at least a part of the side wall portion of the processing chamber is opened to communicate with the processing chamber and the atmosphere, and an atmospheric flow is formed in the processing chamber. Since the atmosphere is hot, a rise in the temperature of the atmosphere around the parts in the processing chamber is suppressed, and a decrease in heat transmission efficiency of the parts in the processing chamber is suppressed. As a result, the parts in the processing chamber can be quickly cooled. In addition, in order to promote cooling of the processing indoor parts, it is not necessary to form a refrigerant passage inside the processing indoor parts, and therefore, there is no case where the configuration of the substrate processing apparatus is complicated.
G‧‧‧基板 G‧‧‧ substrate
L‧‧‧開口量 L‧‧‧ opening
L1‧‧‧開放量 L1‧‧‧ Open
S‧‧‧處理空間 S‧‧‧ processing space
V3‧‧‧閥 V3‧‧‧ valve
W‧‧‧晶圓 W‧‧‧ Wafer
10，30‧‧‧基板處理裝置 10, 30‧‧‧ substrate processing equipment
11，31，36，39，42‧‧‧腔室 11, 31, 36, 39, 42 ‧ ‧ ‧ chambers
11a‧‧‧基部 11a‧‧‧base
11b‧‧‧蓋部 11b‧‧‧ cover
11d‧‧‧開放部 11d‧‧‧Open Department
12‧‧‧平台 12‧‧‧ platform
14‧‧‧排氣系 14‧‧‧Exhaust system
16‧‧‧加熱器 16‧‧‧ heater
19‧‧‧溫度感測器 19‧‧‧Temperature sensor
27‧‧‧DP 27‧‧‧DP
32‧‧‧基座 32‧‧‧ base
33，37，40‧‧‧閘閥 33, 37, 40 ‧ ‧ ‧ Gate Valve
34，38，41‧‧‧連通孔 34, 38, 41‧‧‧ communicating holes
圖1是概略表示實行本發明的實施形態的處理室內零件的冷卻方法的基板處理裝置的構成的剖面圖。 FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus that executes a method for cooling a component in a processing chamber according to an embodiment of the present invention.
圖2是用以說明圖1的腔室的分割的情況的圖，圖2(A)是表示腔室被分割時的剖面圖，圖2(B)是表示腔室被分割時的立體圖。 FIG. 2 is a diagram for explaining the division of the chamber in FIG. 1, FIG. 2 (A) is a cross-sectional view when the chamber is divided, and FIG. 2 (B) is a perspective view when the chamber is divided.
圖3是作為圖1的基板處理裝置所實行的處理室內零 件的冷卻方法之平台的冷卻處理的流程圖。 FIG. 3 is a processing chamber implemented as the substrate processing apparatus of FIG. 1. Flow chart of the cooling process of the platform for the cooling method of the pieces.
圖4是概略表示實行本實施形態的處理室內零件的冷卻方法之基板處理裝置的第1變形例的構成的剖面圖。 FIG. 4 is a cross-sectional view schematically showing a configuration of a first modification of the substrate processing apparatus that executes the method for cooling parts in a processing chamber according to the present embodiment.
圖5是表示圖4的連通孔被開放時的剖面圖。 FIG. 5 is a cross-sectional view when the communication hole of FIG. 4 is opened.
圖6是概略表示實行本實施形態的處理室內零件的冷卻方法之基板處理裝置的第2變形例的構成的立體圖。 FIG. 6 is a perspective view schematically showing a configuration of a second modification of the substrate processing apparatus that executes the method for cooling parts in a processing chamber according to the present embodiment.
圖7是概略表示實行本實施形態的處理室內零件的冷卻方法之基板處理裝置的第3變形例的構成的立體圖。 FIG. 7 is a perspective view schematically showing the configuration of a third modification of the substrate processing apparatus that executes the method for cooling parts in a processing chamber according to the present embodiment.
圖8是概略表示實行本實施形態的處理室內零件的冷卻方法之基板處理裝置的第4變形例的構成的立體圖。 FIG. 8 is a perspective view schematically showing a configuration of a fourth modification of the substrate processing apparatus that executes the method for cooling parts in a processing chamber according to the present embodiment.
以下，一邊參照圖面，一邊說明有關本發明的實施形態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
圖1是概略表示實行本實施形態的處理室內零件的冷卻方法之基板處理裝置的構成的剖面圖。本基板處理裝置10是例如配置於等級1000~10000的無塵室內，且例如對第4.5代以後的FPD(Flat Panel Display)用的玻璃基板(以下簡稱「基板」)G實施所望的電漿處理，例如乾式蝕刻處理。 FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus that executes a method for cooling parts in a processing chamber according to this embodiment. The substrate processing apparatus 10 is, for example, disposed in a clean room of a class of 1000 to 10000, and performs desired plasma processing on, for example, a glass substrate (hereinafter referred to as a "substrate") G for FPD (Flat Panel Display) generation 4.5 and later. , Such as dry etching.
在圖1中，基板處理裝置10是具備：方形的腔室(處理室)11、及配置於腔室11內的下部的平台12(處理室內零件，高溫載置台)、及與平台12對向而配置於腔室11內的上部的淋浴頭13、及將腔室11內排氣 的排氣系14(排氣裝置)。 In FIG. 1, the substrate processing apparatus 10 includes a square chamber (processing chamber) 11, and a lower stage 12 (a processing chamber part, a high-temperature mounting table) disposed in the chamber 11, and a substrate 12 facing the stage 12. The shower head 13 arranged in the upper part of the chamber 11 and exhausting the inside of the chamber 11 Exhaust system 14 (exhaust device).
腔室11是構成可分割成上下，具有構成下部的基部11a及構成上部的蓋部11b。蓋部11b是構成可藉由升降機(未圖示)來從基部11a分離。並且，腔室11是具有例如即使是第4.5代以後的基板也可充裕收容的大小，例如長度是1.5m，寬度是1.5m，高度是1.2m，較理想是長度為1.4m，寬度為1.3m，高度為1.0m。 The chamber 11 is configured to be divided into an upper part and a lower part, and has a base part 11a constituting a lower part and a lid part 11b constituting an upper part. The lid portion 11b is configured to be detachable from the base portion 11a by an elevator (not shown). In addition, the chamber 11 has a size that can be adequately accommodated even for substrates of the 4.5th generation and later, for example, the length is 1.5m, the width is 1.5m, and the height is 1.2m. The length is preferably 1.4m and the width is 1.3. m with a height of 1.0m.
平台12是由藉由支柱部15來支撐的平板狀構件所構成，在內部具有加熱器16(加熱機構)，載置基板G。加熱器16是經由給電路17來連接至加熱器單元18，加熱器單元18是控制往加熱器16的給電量，調整藉由加熱器16來加熱的平台12的溫度。並且，平台12具有測定該平台12的溫度的溫度感測器19，溫度感測器19是被連接至溫度感測器單元20。溫度感測器單元20是根據來自溫度感測器19的訊號來測定平台12的溫度。而且，平台12經由匹配器21來連接高頻電源22，高頻電源22往平台12供給高頻電力。平台12是以藉由未圖示接地線所接地的淋浴頭13作為對向電極來往平台12及淋浴頭13之間的處理空間S施加高頻電力而使產生電場。藉由此電場，使從淋浴頭13供給的處理氣體電漿化，產生電容耦合電漿。 The stage 12 is a flat plate-shaped member supported by the pillar portion 15, and includes a heater 16 (heating mechanism) inside, and a substrate G is placed thereon. The heater 16 is connected to a heater unit 18 via a feeding circuit 17. The heater unit 18 controls the amount of power supplied to the heater 16 and adjusts the temperature of the platform 12 heated by the heater 16. The platform 12 includes a temperature sensor 19 that measures the temperature of the platform 12. The temperature sensor 19 is connected to the temperature sensor unit 20. The temperature sensor unit 20 measures the temperature of the platform 12 based on a signal from the temperature sensor 19. The platform 12 is connected to a high-frequency power source 22 via a matching unit 21, and the high-frequency power source 22 supplies high-frequency power to the platform 12. The platform 12 uses the shower head 13 grounded by a ground wire (not shown) as a counter electrode to apply high-frequency power to the processing space S between the platform 12 and the shower head 13 to generate an electric field. By this electric field, the processing gas supplied from the shower head 13 is plasmatized, and a capacitive coupling plasma is generated.
淋浴頭13是由與平台12大致同大小的板狀構件所構成，在內部具有緩衝室23、及連通該緩衝室23及處理空間S的多數個氣體孔24。在緩衝室23連接來自 外部的處理氣體供給管25，該處理氣體供給管25往緩衝室23供給的處理氣體是經由各氣體孔24來導入至處理空間S。 The shower head 13 is composed of a plate-like member having a size substantially the same as that of the platform 12, and has a buffer chamber 23 therein and a plurality of gas holes 24 communicating with the buffer chamber 23 and the processing space S. The connection in the buffer chamber 23 comes from An external processing gas supply pipe 25 is used to introduce the processing gas supplied from the processing gas supply pipe 25 to the buffer chamber 23 into the processing space S through each gas hole 24.
排氣系14是渦輪分子泵(Turbo Molecular Pump)(以下稱為「TMP」)26及乾式泵(Dry Pump)(以下稱為「DP」)27串聯構成，具有：連接處理室內及TMP26的排氣流路28a、連接TMP26及DP27的排氣流路28b、將TMP26旁通而直接連接處理室內及DP27的排氣流路28c。排氣流路28a，28b，28c是分別具有可遮斷的閥V1，V2，V3。 The exhaust system 14 is composed of a turbo molecular pump (hereinafter referred to as "TMP") 26 and a dry pump (hereinafter referred to as "DP") 27 in series. The air flow path 28a, an exhaust flow path 28b connecting the TMP26 and the DP27, and the exhaust flow path 28c that bypasses the TMP26 and directly connects the processing chamber and the DP27. The exhaust flow paths 28a, 28b, and 28c are provided with shut-off valves V1, V2, and V3, respectively.
圖2是用以說明圖1的腔室的分割的情況的圖，圖2(A)是表示腔室被分割時的剖面圖，圖2(B)是表示腔室被分割時的立體圖。 FIG. 2 is a diagram for explaining the division of the chamber in FIG. 1, FIG. 2 (A) is a cross-sectional view when the chamber is divided, and FIG. 2 (B) is a perspective view when the chamber is divided.
在圖2(A)及圖2(B)中，基部11a及蓋部11b的接縫11c是形成於腔室11的側壁部的全周，藉由升降機來使蓋部11b從基部11a分離時，在腔室11的側壁部的全周形成有開放部11d。此時，經由開放部11d來連通腔室11內及無塵室的大氣。基部11a之至側壁的接縫11c的高度是在全周為相同，開放部11d之從內壁側端部到平台12的距離是在全周大致相同，例如200mm程度。 In FIGS. 2 (A) and 2 (B), the joint 11c of the base portion 11a and the lid portion 11b is formed on the entire circumference of the side wall portion of the chamber 11, and the lid portion 11b is separated from the base portion 11a by an elevator. An open portion 11 d is formed on the entire periphery of the side wall portion of the chamber 11. At this time, the atmosphere in the chamber 11 and the clean room is communicated through the open portion 11d. The height of the seam 11c from the base portion 11a to the side wall is the same throughout the entire circumference, and the distance from the inner wall side end portion to the platform 12 of the open portion 11d is approximately the same throughout the entire circumference, for example, about 200 mm.
升降機是可自由設定蓋部11b之離基部11a的間距，可將開放部11d的開口量L設定成任意的值。並且，升降機亦可從基部11a的上方來完全拿掉蓋部11b。 The lifter can freely set the distance between the lid portion 11b and the base portion 11a, and can set the opening amount L of the open portion 11d to an arbitrary value. In addition, the lifter may completely remove the lid portion 11b from above the base portion 11a.
在基板處理裝置10中，從淋浴頭13往處理空間S導入的處理氣體會藉由在處理空間S所產生的電場來激發而成為電漿。電漿中的陽離子是朝基板G拉進來而對基板G物理性地實施蝕刻處理，且電漿中的自由基是到達基板G而對基板G化學性地實施蝕刻處理。並且，在乾式蝕刻處理中，特別是為了促進化學性蝕刻，加熱器16會將平台12例如加熱至260℃。 In the substrate processing apparatus 10, the processing gas introduced from the shower head 13 into the processing space S is excited by an electric field generated in the processing space S to become a plasma. The cations in the plasma are pulled toward the substrate G to physically perform the etching treatment on the substrate G, and the radicals in the plasma reach the substrate G to chemically perform the etching treatment on the substrate G. In addition, in the dry etching process, in particular to promote chemical etching, the heater 16 heats the stage 12 to, for example, 260 ° C.
基板處理裝置10的各構成零件，例如升降機、加熱器單元18、溫度感測器單元20、TMP26、DP27或閥V1，V2，V3是被連接至基板處理裝置10所具備的控制部(未圖示)，控制部的CPU會按照對應於所定的處理的程式來控制各構成零件的動作。 Each component of the substrate processing apparatus 10, such as an elevator, a heater unit 18, a temperature sensor unit 20, TMP26, DP27, or a valve V1, V2, V3 is a control unit (not shown) provided to the substrate processing apparatus 10 (Shown), the CPU of the control unit controls the operation of each component according to a program corresponding to a predetermined process.
圖3是作為圖1的基板處理裝置所實行的處理室內零件的冷卻方法之平台的冷卻處理的流程圖。本處理是在實行平台12的洗淨或更換等的維修之前，基板處理裝置10的控制部的CPU會按照平台冷卻程式(處理室內零件冷卻程式)來實行。 3 is a flowchart of a cooling process of a platform as a cooling method of a processing chamber component executed by the substrate processing apparatus of FIG. 1. This process is performed by the CPU of the control unit of the substrate processing apparatus 10 in accordance with the platform cooling program (processing chamber parts cooling program) before performing maintenance such as cleaning or replacement of the platform 12.
在圖3中，首先，加熱器單元18會停止往加熱器16的給電，中止加熱器16之平台12的加熱(步驟S31)，閥V1，V2，V3會被關閉而遮斷各排氣流路28a，28b，28c，藉此中斷排氣系14之腔室11內的排氣(步驟S32)，而且，從淨化氣體供給管(未圖示)或處理氣體供給管25等往腔室11內，自無塵室導入大氣來將腔室11內的壓力調整成大氣壓(步驟S33)(壓力調 整步驟)。熱會從高溫的平台12來傳達至所被導入的大氣，平台12附近的大氣(在圖2(A)中是以虛線表示)的溫度會上昇。 In FIG. 3, first, the heater unit 18 stops supplying power to the heater 16 and stops heating of the platform 12 of the heater 16 (step S31). The valves V1, V2, and V3 are closed to block each exhaust flow. 28a, 28b, 28c, thereby interrupting the exhaust in the chamber 11 of the exhaust system 14 (step S32), and from the purge gas supply pipe (not shown) or the process gas supply pipe 25 to the chamber 11 Into the atmosphere from the clean room, the pressure in the chamber 11 is adjusted to atmospheric pressure (step S33) (pressure adjustment Entire step). Heat is transmitted from the high-temperature platform 12 to the introduced atmosphere, and the temperature of the atmosphere near the platform 12 (indicated by a dotted line in FIG. 2 (A)) rises.
其次，藉由升降機來使蓋部11b從基部11a分離，而於腔室11的側壁部的全周形成開放部11d，更將開放部11d的開口量L例如調整成40mm以上且100mm以下，較理想是60mm以上且80mm以下(步驟S34)(處理室內開放步驟)，閥V3會被開啟，DP27會經由排氣流路28c來開始腔室11內的排氣(步驟S35)(氣流形成步驟)。此時，在腔室11內形成氣流(在圖2(A)中是以箭號表示)，自高溫的平台12傳達熱的大氣是藉由DP27來從腔室11內排出，新的大氣會從無塵室經由開放部11d來流入腔室11內，熱會從平台12來傳達至該新的大氣。在利用DP27之腔室11內的大氣的排出繼續的期間，重複新的大氣的流入、及往該流入的大氣之來自平台12的熱的傳達、以及被傳達熱的大氣的排出。亦即，被傳達平台12的熱的大氣會更換，平台12的熱會持續被奪取，因此平台12的溫度會迅速地降低。 Next, the lid portion 11b is separated from the base portion 11a by an elevator, and an opening portion 11d is formed on the entire periphery of the side wall portion of the chamber 11. The opening amount L of the opening portion 11d is adjusted to, for example, 40 mm or more and 100 mm or less. Ideally, it should be 60mm or more and 80mm or less (step S34) (the opening step in the processing chamber), the valve V3 will be opened, and the DP27 will start the exhaust in the chamber 11 through the exhaust flow path 28c (step S35) (air flow forming step). . At this time, an air flow is formed in the chamber 11 (indicated by an arrow in FIG. 2 (A)), and the hot atmosphere transmitted from the high-temperature platform 12 is discharged from the chamber 11 through the DP27, and the new atmosphere will The clean room flows into the chamber 11 through the open portion 11d, and heat is transmitted from the platform 12 to the new atmosphere. While the exhaust of the atmosphere in the chamber 11 using the DP 27 continues, the inflow of a new atmosphere, the transfer of heat from the platform 12 to the inflowing atmosphere, and the exhaust of the transferred atmosphere are repeated. That is, the heat of the atmosphere conveyed by the platform 12 will be replaced, and the heat of the platform 12 will continue to be captured, so the temperature of the platform 12 will decrease rapidly.
其次，溫度感測器單元20會判別藉由溫度感測器19所測定的平台12的溫度例如是否形成60℃以下(步驟S36)(溫度判定步驟)。之所以將判別基準設為60℃，是因為若是60℃以下，則即使作業者接觸平台12也不會燙傷。 Next, the temperature sensor unit 20 determines whether the temperature of the stage 12 measured by the temperature sensor 19 is, for example, 60 ° C. or lower (step S36) (temperature determination step). The reason why the determination criterion is set to 60 ° C. is that if the temperature is 60 ° C. or lower, the operator will not be burned even if he touches the platform 12.
步驟S36的判別的結果，當平台12的溫度未 到達60℃以下時(在步驟S36是NO)，回到步驟S35，繼續被傳達平台12的熱之大氣的更換。另一方面，當平台12的溫度到達60℃以下時(在步驟S36是YES)，關閉閥V3，使腔室11內的氣流停止，停止被傳達平台12的熱之大氣的更換(步驟S37)(氣流停止步驟)。 As a result of the discrimination in step S36, when the temperature of the platform 12 is not When the temperature reaches 60 ° C or lower (NO in step S36), the process returns to step S35 and the replacement of the hot atmosphere by the platform 12 is continued. On the other hand, when the temperature of the platform 12 reaches 60 ° C or lower (YES in step S36), the valve V3 is closed to stop the air flow in the chamber 11, and the replacement of the hot atmosphere conveyed by the platform 12 is stopped (step S37). (Airflow stopping step).
其次，升降機會從基部11a的上方完全拿掉蓋部11b，將包含平台12的腔室11內的零件開放至無塵室的大氣(步驟S38)，結束本處理。 Next, the lifter completely removes the lid portion 11b from above the base portion 11a, and opens the components in the chamber 11 including the platform 12 to the atmosphere of the clean room (step S38), and ends this process.
另外，實行上述平台的冷卻處理的平台冷卻程式是具有：將腔室11內的壓力調整成大氣壓的壓力調整模組、及使蓋部11b從基部11a分離的處理室內開放模組、及開啟閥V3在腔室11內形成氣流的氣流形成模組、及判別平台12的溫度是否形成60℃以下的溫度判定模組，及關閉閥V3使腔室11內的氣流停止的氣流停止模組，原則上各模組是以此順序來實行所對應的處理，但例如亦可在處理室內開放模組使蓋部11b從基部11a分離的期間，氣流形成模組從處理室內開放模組叫出來，開啟閥V3，在腔室11內形成氣流。 The platform cooling program that performs the cooling process of the platform includes a pressure adjustment module that adjusts the pressure in the chamber 11 to atmospheric pressure, an open module in the processing chamber that separates the lid portion 11b from the base portion 11a, and an opening valve. V3 An airflow formation module that forms airflow in the chamber 11, and a temperature determination module that determines whether the temperature of the platform 12 is below 60 ° C, and an airflow stop module that closes the valve V3 to stop the airflow in the chamber 11, the principle The above modules perform the corresponding processing in this order. For example, the airflow forming module can be called out from the open module in the processing chamber while the cover 11b is separated from the base 11a when the module is opened in the processing chamber. The valve V3 forms an air flow in the chamber 11.
藉由圖3的平台的冷卻處理，腔室11內的壓力被調整成大氣壓之後，蓋部11b會離開基部11a，形成開放部11d，腔室11內及無塵室的大氣會連通，在腔室11內形成氣流，替換被傳達平台12的熱的大氣，因此平台12的周圍的大氣的溫度的上昇會被抑制，平台12的熱的傳達效率的降低會被抑制。其結果，可快速冷卻平台 12。並且，為了平台12的冷卻促進，不必在平台12的內部形成冷媒通路，因此不會使基板處理裝置10的構成形成複雜的情形。 Through the cooling process of the platform in FIG. 3, after the pressure in the chamber 11 is adjusted to atmospheric pressure, the lid portion 11b will leave the base portion 11a to form an open portion 11d. The atmosphere in the chamber 11 and the clean room will communicate with each other. An air flow is formed in the chamber 11 to replace the hot atmosphere conveyed by the platform 12. Therefore, a rise in the temperature of the atmosphere around the platform 12 is suppressed, and a decrease in the heat transfer efficiency of the platform 12 is suppressed. As a result, the platform can be quickly cooled 12. In addition, in order to promote the cooling of the stage 12, it is not necessary to form a refrigerant passage inside the stage 12, so that the configuration of the substrate processing apparatus 10 is not complicated.
在圖3的平台的冷卻處理中，是在腔室11的側壁部的全周形成開放部11d，亦即連續性地開放，因此大氣會從腔室11的側壁部的全周流入，可防止腔室11內的氣流偏倚，進而可防止平台12被偏倚冷卻。 In the cooling process of the platform in FIG. 3, the opening portion 11 d is formed on the entire periphery of the side wall portion of the chamber 11, that is, the opening portion 11 d is continuously opened. Therefore, the atmosphere flows into the entire periphery of the side wall portion of the chamber 11, which can prevent the The airflow in the chamber 11 is biased, thereby preventing the platform 12 from being cooled by the bias.
並且，在圖3的平台的冷卻處理中，形成開放部11d時的開口量L為40mm以上且100mm以下，因此可確保流入的大氣的流量，可促進大氣的更換，進而可確實地防止平台12的熱的傳達效率降低。可防止往腔室11內流入的大氣的流速降低，進而可確實地進行腔室11內的氣流的形成。而且，若開口量L為100mm以下，則作業者的手臂無法容易進入，因此可減少作業者觸及高溫的平台12而燙傷的危險性，且因為開口量L並不那麼大，所以來自平台12的輻射熱不易到達腔室11的外部的零件或裝置，可防止腔室11的外部的零件或裝置因熱而故障、劣化。 In the cooling process of the platform of FIG. 3, the opening amount L when the open portion 11d is formed is 40 mm or more and 100 mm or less, so that the flow rate of the inflowing atmosphere can be ensured, the exchange of the atmosphere can be promoted, and the platform 12 can be reliably prevented The heat transfer efficiency is reduced. It is possible to prevent the flow velocity of the atmosphere flowing into the chamber 11 from being lowered, and it is possible to surely form the airflow in the chamber 11. In addition, if the opening amount L is 100 mm or less, the operator's arm cannot easily enter, so the danger of the operator touching the high-temperature platform 12 and scalding can be reduced, and because the opening amount L is not so large, the The radiant heat does not easily reach the parts or devices outside the chamber 11, and it is possible to prevent the parts or devices outside the chamber 11 from being damaged or deteriorated due to heat.
並且，在圖3的平台的冷卻處理中，在腔室11的側壁部的全周形成開放部11d之前，腔室11內的壓力會被調整成大氣壓，因此在形成開放部11d時，不會在外部的無塵室與腔室11內產生壓力差，不會有大氣急劇地往腔室11內流入的情形。其結果，不會有堆積於腔室11內的底部等的粒子等被捲起的情形，進行可防止粒子 多量地往平台12附著。 In the cooling process of the platform of FIG. 3, the pressure in the chamber 11 is adjusted to the atmospheric pressure before the opening portion 11d is formed on the entire circumference of the side wall portion of the chamber 11, so that the opening portion 11d is not affected when the opening portion 11d is formed. A pressure difference occurs between the external clean room and the inside of the chamber 11, and there is no case where the atmosphere suddenly flows into the inside of the chamber 11. As a result, particles and the like accumulated on the bottom of the chamber 11 are not rolled up, and the particles can be prevented. A large amount is attached to the platform 12.
另外，平台12的冷卻用的大氣的更換時，無塵室的大氣中的粒子等多少會進入腔室11內，也會有往平台12附著之虞，但平台12的冷卻用的大氣的更換的實行後，維修時平台12是被洗淨或更換，所以往平台12附著的粒子會被除去。因此，在維修後的乾式蝕刻處理中不會有粒子從平台12往基板G轉印之虞。並且，譬如，即使粒子從平台12往基板G轉印，也會因為形成於基板G的配線的寬度是例如最小也為3μm程度，所以即使大小1μm以下的粒子附著，也不會成為從基板G製造的FPD狀態不佳的原因。 In addition, when the cooling atmosphere of the platform 12 is replaced, particles or the like in the air of the clean room may enter the chamber 11 to some extent, and there may be a risk of adhesion to the platform 12, but the cooling atmosphere of the platform 12 is replaced. After the implementation, the platform 12 is washed or replaced during maintenance, so the particles attached to the platform 12 will be removed in the past. Therefore, there is no possibility that particles are transferred from the stage 12 to the substrate G in the dry etching process after maintenance. In addition, for example, even if particles are transferred from the stage 12 to the substrate G, the width of the wiring formed on the substrate G is, for example, about 3 μm in minimum. Therefore, even if particles having a size of 1 μm or less adhere, they do not become the slave substrate G. The reason for the poor condition of the manufactured FPD.
實行上述圖3的平台的冷卻處理的基板處理裝置並非限於對圖1所示那樣的大型的FPD用的基板G實施所望的電漿處理的基板處理裝置10，亦可為對半導體裝置用的晶圓W實施所望的電漿處理的基板處理裝置。 The substrate processing apparatus that performs the cooling processing of the platform shown in FIG. 3 is not limited to the substrate processing apparatus 10 that performs a desired plasma processing on a large-sized FPD substrate G as shown in FIG. 1, and may be a crystal for semiconductor devices. Circle W is a substrate processing apparatus that performs desired plasma processing.
圖4是概略表示實行本實施形態的處理室內零件的冷卻方法的基板處理裝置的第1變形例的構成的剖面圖。本基板處理裝置30是例如配置於等級1000~10000的無塵室內，且對例如半徑為300mm~450mm的晶圓W實施乾式蝕刻處理。另外，基板處理裝置30的構成是與基板處理裝置10的構成基本上相同，僅各部的大小或名稱等相異，因此以下省略具有同機能、名稱的構成零件的說明。 FIG. 4 is a cross-sectional view schematically showing a configuration of a first modification of the substrate processing apparatus that executes the method for cooling parts in a processing chamber according to the present embodiment. The substrate processing apparatus 30 is, for example, disposed in a clean room in a class of 1000 to 10,000, and performs a dry etching process on, for example, a wafer W having a radius of 300 mm to 450 mm. In addition, the configuration of the substrate processing apparatus 30 is basically the same as that of the substrate processing apparatus 10, and only the sizes, names, and the like of each part are different. Therefore, descriptions of constituent parts having the same function and name are omitted below.
在圖4中，基板處理裝置30是具備：圓筒形狀的腔室31(處理室)、及配置在腔室31內的下部的基座32(處理室內零件，高溫載置台)、及與基座32對向而配置於腔室31內的上部的淋浴頭13、及將腔室31內排氣的排氣系14(排氣裝置)。 In FIG. 4, the substrate processing apparatus 30 includes a cylindrical chamber 31 (processing chamber), and a pedestal 32 (parts in the processing chamber, high-temperature mounting table) disposed in the lower portion of the chamber 31, and a base The seat 32 faces the shower head 13 disposed in the upper part of the chamber 31 and the exhaust system 14 (exhaust device) for exhausting the inside of the chamber 31.
腔室31是具有：可沿著側壁部滑動的閘閥33、及使腔室31內與無塵室的大氣連通的連通孔34，閘閥33是藉由滑動來開閉連通孔34。 The chamber 31 includes a gate valve 33 that can slide along the side wall portion, and a communication hole 34 that allows the inside of the chamber 31 to communicate with the atmosphere of the clean room. The gate valve 33 slides to open and close the communication hole 34.
基座32是由圓柱狀的導電性構件所構成，表面全部以絶縁體所覆蓋，且經由給電路17來連接至加熱器單元18，在內部具有加熱器16(加熱機構)。加熱器單元18是在於調整藉由加熱器16來加熱的基座32的溫度。並且，基座32是具有溫度感測器19，溫度感測器單元20是根據來自溫度感測器19的訊號來測定基座32的溫度。而且，基座32是經由匹配器21來連接高頻電源22，往基座32供給的高頻電力是在基座32及淋浴頭13之間的處理空間S使電場產生。在基座32的上部形成有靜電吸附晶圓W的靜電吸盤(未圖示)，且以能夠包圍被靜電吸附的晶圓W的周圍之方式配置有環狀的聚焦環35。 The base 32 is composed of a columnar conductive member, the entire surface of which is covered with an insulator, and is connected to the heater unit 18 via a feeding circuit 17, and has a heater 16 (heating mechanism) inside. The heater unit 18 adjusts the temperature of the base 32 heated by the heater 16. The base 32 includes a temperature sensor 19, and the temperature sensor unit 20 measures the temperature of the base 32 based on a signal from the temperature sensor 19. Further, the base 32 is connected to the high-frequency power source 22 via the matching device 21. The high-frequency power supplied to the base 32 generates an electric field in the processing space S between the base 32 and the shower head 13. An electrostatic chuck (not shown) for electrostatically adsorbing the wafer W is formed on the upper portion of the susceptor 32, and a ring-shaped focus ring 35 is disposed so as to surround the periphery of the wafer W that is electrostatically adsorbed.
圖5是表示圖4的連通孔被開放時的剖面圖。 FIG. 5 is a cross-sectional view when the communication hole of FIG. 4 is opened.
在圖5中，連通孔34是設於側壁部的一部分，被開放時，腔室31內及無塵室的大氣會連通。閘閥 33是可自由設定滑動量，可將連通孔34的開放量L1設定成任意的值。 In FIG. 5, the communication hole 34 is provided in a part of the side wall portion, and when opened, the atmosphere in the chamber 31 and the clean room communicates. gate 33 is a sliding amount that can be set freely, and the opening amount L1 of the communication hole 34 can be set to an arbitrary value.
在基板處理裝置30，乾式蝕刻處理中，尤其為了促進化學性蝕刻，加熱器16會將基座32例如加熱至260℃。 In the substrate processing apparatus 30 and the dry etching process, in particular to promote chemical etching, the heater 16 heats the susceptor 32 to, for example, 260 ° C.
並且，基板處理裝置30也實行本實施形態的處理室內零件的冷卻方法。具體而言，若中斷排氣系14之腔室31內的排氣，且將腔室31內的壓力調整成大氣壓，則雖高溫的基座32附近的大氣(在圖5中是以虛線表示)的溫度會上昇，但若閘閥33將連通孔34開放而使該連通孔34的開放量L1例如調整成40mm以上且100mm以下，較理想是60mm以上且80mm以下，開始腔室31內的排氣，則會在腔室31內形成氣流(在圖5中是以箭號表示)，替換被傳達基座32的熱的大氣。而且，當基座32的溫度到達60℃以下時，使腔室31內的氣流停止，停止被傳達基座32的熱的大氣的更換。 The substrate processing apparatus 30 also executes a method for cooling parts in a processing chamber according to this embodiment. Specifically, if the exhaust in the chamber 31 of the exhaust system 14 is interrupted, and the pressure in the chamber 31 is adjusted to atmospheric pressure, the atmosphere near the base 32 which is high temperature (indicated by a dotted line in FIG. 5) ), The temperature will increase, but if the gate valve 33 opens the communication hole 34, the opening amount L1 of the communication hole 34 is adjusted to, for example, 40 mm or more and 100 mm or less, and more preferably 60 mm or more and 80 mm or less. Air, an air flow (indicated by an arrow in FIG. 5) is formed in the chamber 31, replacing the hot atmosphere conveyed by the base 32. When the temperature of the susceptor 32 reaches 60 ° C. or lower, the air flow in the chamber 31 is stopped, and the replacement of the hot atmosphere transmitted by the susceptor 32 is stopped.
亦即，基板處理裝置30在實行本實施形態的處理室內零件的冷卻方法時也是在腔室31內形成氣流來持續奪取基座32的熱，因此基座32的溫度會迅速降低。因此，在實行本實施形態的處理室內零件的冷卻方法時，腔室31的側壁部不需要於全周連續性地開放，只要至少一部分例如連通孔34被開放即可。 That is, when the substrate processing apparatus 30 executes the method for cooling the components in the processing chamber according to the present embodiment, the airflow is formed in the chamber 31 to continuously capture heat from the susceptor 32, so that the temperature of the susceptor 32 is rapidly reduced. Therefore, when the method for cooling parts in a processing chamber according to this embodiment is implemented, the side wall portion of the chamber 31 does not need to be continuously opened over the entire periphery, and at least a part of the communication hole 34 may be opened.
但，於全周不連續性地開放腔室的側壁時，如圖6所示般，若為方形的腔室36，則在各側面設置可 用閘閥37開閉的連通孔38，使藉由從各連通孔38往腔室36內流入的大氣所形成的氣流各向同性地到達平台為理想，又，如圖7所示般，若為圓筒形的腔室39，則在側面於周方向以等間隔設置可藉由閘閥40來開閉的連通孔41，使藉由從各連通孔41往腔室39內流入的大氣所形成的氣流各向同性地到達基座為理想。藉此，可防止平台或基座被偏倚冷卻。 However, when the side walls of the chamber are opened discontinuously throughout the entire periphery, as shown in FIG. It is desirable that the communication holes 38 opened and closed by the gate valve 37 allow the airflow formed by the air flowing into the cavity 36 from each communication hole 38 to reach the platform isotropically. As shown in FIG. The cylindrical cavity 39 is provided with communication holes 41 which can be opened and closed by the gate valve 40 at equal intervals in the circumferential direction on the side surface, and the airflow formed by the air flowing into the cavity 39 from each communication hole 41 is different from each other. It is desirable to reach the base isotropically. This prevents the platform or base from being biased and cooled.
並且，在圖6的腔室36或圖7的腔室39中，氣流未從各連通孔38或各連通孔41來各向同性地到達平台或基座時，個別地調整各連通孔38或各連通孔41的開放量來調整從各連通孔38或各連通孔41流入的大氣的量為理想。 In addition, in the cavity 36 of FIG. 6 or the cavity 39 of FIG. 7, when the airflow does not reach the platform or the base isotropically from each communication hole 38 or each communication hole 41, each communication hole 38 or The opening amount of each communication hole 41 is preferably adjusted by the amount of air flowing into each communication hole 38 or each communication hole 41.
而且，亦可如圖8所示般，藉由上部被開放的框體43及被載置於該框體43的上部的蓋44來構成腔室42，使該蓋44從框體43例如分離40mm以上且100mm以下程度，而於腔室42內形成氣流。 Furthermore, as shown in FIG. 8, the chamber 42 may be configured by a frame body 43 with an opened upper portion and a cover 44 placed on the upper portion of the frame 43 to separate the cover 44 from the frame 43, for example. The airflow is formed in the cavity 42 within a range of 40 mm to 100 mm.
以上，有關本發明是利用上述實施形態來說明，但本發明並非限於上述實施形態。例如，上述實施形態的處理室內零件的冷卻方法是冷卻平台12或基座32，但被冷卻的腔室內零件並非限於該等，例如亦可為淋浴頭，且在感應耦合電漿裝置是亦可為隔絕感應耦合用的線圈天線與處理室之間的介電質窗，且在利用微波的電漿裝置亦可為導入微波的介電質窗。 As mentioned above, although this invention was demonstrated using the said embodiment, this invention is not limited to the said embodiment. For example, the cooling method for the parts in the processing chamber in the above embodiment is to cool the platform 12 or the base 32, but the parts in the chamber to be cooled are not limited to these. For example, it may be a shower head, and it may be used in an inductively coupled plasma device. In order to isolate the dielectric window between the coil antenna for inductive coupling and the processing chamber, the plasma device using microwaves can also be a dielectric window that introduces microwaves.
並且，上述的基板處理裝置10是在腔室11 中僅蓋部11b移動而從基部11a分離，但亦可僅基部11a移動而從蓋部11b分離，或亦可基部11a及蓋部11b皆移動而彼此分離。 The above-mentioned substrate processing apparatus 10 is in the chamber 11 Although only the lid portion 11b moves to separate from the base portion 11a, the base portion 11a may move only to separate from the lid portion 11b, or the base portion 11a and the lid portion 11b may move to separate from each other.
而且，可實現上述實施形態的處理室內零件的冷卻方法的基板處理裝置所實行的電漿處理也不限於乾式蝕刻處理，例如亦可為成膜處理，該基板處理裝置亦可不是電漿處理，而是實行退火處理等的高溫處理者。 In addition, the plasma processing performed by the substrate processing apparatus capable of realizing the cooling method of the processing chamber parts according to the above-mentioned embodiment is not limited to dry etching processing. For example, it may be a film forming process, and the substrate processing apparatus may not be plasma processing. It is a high-temperature processor who performs annealing and the like.
本發明的目的亦可藉由將記錄實現上述實施形態的機能的軟體程式之記憶媒體供應給電腦等，電腦的CPU讀出儲存於記憶媒體的程式例如上述的平台冷卻程式來執行而達成。 The object of the present invention can also be achieved by supplying a storage medium that records a software program that realizes the functions of the embodiment described above to a computer or the like, and the CPU of the computer reads out a program stored in the storage medium, such as the platform cooling program described above, and executes it.
此情況，從記憶媒體讀出的程式本身會實現上述實施形態的機能，程式及記憶該程式的記憶媒體是構成本發明。 In this case, the program itself read out from the storage medium realizes the functions of the embodiment described above, and the program and the storage medium storing the program constitute the present invention.
並且，用以供給程式的記憶媒體是例如可為RAM、NV-RAM、軟碟(註冊商標)、硬碟、光磁碟、CD-ROM、CD-R、CD-RW、DVD(DVD-ROM、DVD-RAM、DVD-RW、DVD+RW)等的光碟、磁帶、非揮發性的記憶卡、及其他的ROM等記憶上述程式者。或者，上述程式亦可從連接至網際網路、商用網路、或局部區域網路等之未圖示的其他電腦或資料庫等來下載而供應給電腦。 In addition, the storage medium for supplying the program may be, for example, RAM, NV-RAM, floppy disk (registered trademark), hard disk, magneto-optical disk, CD-ROM, CD-R, CD-RW, DVD (DVD-ROM , DVD-RAM, DVD-RW, DVD + RW), etc., those who memorize the above programs, such as optical discs, magnetic tapes, non-volatile memory cards, and other ROMs. Alternatively, the above program may be downloaded and supplied to a computer from another computer or a database (not shown) connected to the Internet, a business network, or a local area network.
而且，藉由執行電腦的CPU所讀出的程式，不僅上述實施形態的機能會被實現，且亦包含在CPU上 運作的OS(操作系統)等會根據該程式的指示來進行實際的處理的一部分或全部，藉由該處理來實現上述實施形態的機能時。 In addition, by executing the program read by the CPU of the computer, not only the functions of the above embodiment are realized, but also the CPU is included. When an operating OS (operating system) or the like executes part or all of the actual processing in accordance with the instruction of the program, the functions of the above-mentioned embodiment are realized by the processing.
甚至，亦包含從記憶媒體讀出的程式在被寫入至插入電腦的機能擴充板或連接至電腦的機能擴充單元所具備的記憶體之後，該機能擴充板或機能擴充單元所具備的CPU等會根據該程式的指示來進行實際的處理的一部分或全部，藉由該處理來實現上述實施形態的機能時。 In addition, the program read from the storage medium is also written into the memory of the function expansion board inserted into the computer or the function expansion unit connected to the computer, and then the CPU of the function expansion board or the function expansion unit is included. Part or all of the actual processing is performed according to the instruction of the program, and the function of the above embodiment is realized by the processing.
上述程式的形態亦可由物件程式碼(Object Code)、藉由直譯器(interpreter)所執行的程式、被供給至OS的劇本資料(script data)等的形態所構成。 The form of the above-mentioned program may be constituted by an form of an object code, a program executed by an interpreter, and script data supplied to the OS.
首先，在基板處理裝置10中實行乾式蝕刻處理時，藉由加熱器16來將平台12加熱至260℃，然後，實行圖3的平台的冷卻處理，測定平台12被冷卻至60℃的時間，只需要16小時(實施例)。另外，在實施例中，開放部11d的開口量L是被設定成45mm。 First, when the dry etching process is performed in the substrate processing apparatus 10, the stage 12 is heated to 260 ° C by the heater 16, and then the stage cooling process of FIG. 3 is performed to measure the time when the stage 12 is cooled to 60 ° C. It only takes 16 hours (example). In addition, in the embodiment, the opening amount L of the open portion 11d is set to 45 mm.
另一方面，與實施例同樣，在基板處理裝置10中藉由加熱器16來將平台12加熱至260℃，然後，在腔室11內導入大氣之後，不進行腔室11內的排氣，且不使蓋部11b從基部11a分離，放置腔室11不理，測定平台12被冷卻60℃的時間，需要48小時(比較例)。 On the other hand, as in the embodiment, the stage 12 is heated to 260 ° C. by the heater 16 in the substrate processing apparatus 10, and after the atmosphere is introduced into the chamber 11, the exhaust in the chamber 11 is not performed. In addition, the lid portion 11b is not separated from the base portion 11a, and the chamber 11 is left alone. The measurement time for the platform 12 to be cooled at 60 ° C requires 48 hours (comparative example).
因此，可知藉由實行圖3的平台的冷卻處 理，相較於放置腔室11不理時，可以3倍的速度來冷卻平台12。 Therefore, it can be seen that by implementing the cooling place of the platform of FIG. 3 Compared with leaving the chamber 11 alone, the platform 12 can be cooled at 3 times the speed.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060219361A1 (en) * | 2005-04-01 | 2006-10-05 | Lam Research Corporation | High strip rate downstream chamber |
| TW200903600A (en) * | 2007-05-08 | 2009-01-16 | Applied Materials Inc | Substrate cleaning chamber and cleaning and conditioning methods |
| TW201137969A (en) * | 2009-12-10 | 2011-11-01 | Tokyo Electron Ltd | Plasma process apparatus |
| TWI358077B (en) * | 2004-02-11 | 2012-02-11 | Applied Materials Inc | Cleaning of chamber components |
| TWM489359U (en) * | 2014-05-22 | 2014-11-01 | Po-Jui Lin | Multi-functional fiddle slip stopper |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63136644A (en) * | 1986-11-28 | 1988-06-08 | Canon Inc | Plasma processor |
| JP3296863B2 (en) * | 1992-11-24 | 2002-07-02 | アネルバ株式会社 | Preparation method of titanium-based thin film |
| JPH1154484A (en) * | 1997-08-06 | 1999-02-26 | Matsushita Electric Ind Co Ltd | Plasma treatment device and plasma treatment method of electronic component |
| JPH11329927A (en) * | 1998-05-11 | 1999-11-30 | Dainippon Screen Mfg Co Ltd | Device and method for cooling substrate |
| JPH11340114A (en) * | 1998-05-26 | 1999-12-10 | Dainippon Screen Mfg Co Ltd | Substrate heat-treating device and its maintenance method |
| JP3527450B2 (en) * | 1999-12-22 | 2004-05-17 | 東京エレクトロン株式会社 | Processing equipment |
| JP2001319921A (en) * | 2000-05-09 | 2001-11-16 | Canon Inc | Processing chamber |
| US6399510B1 (en) * | 2000-09-12 | 2002-06-04 | Applied Materials, Inc. | Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates |
| JP2004128046A (en) * | 2002-09-30 | 2004-04-22 | Shibaura Mechatronics Corp | Vacuum treatment vessel |
| JP2005209998A (en) * | 2004-01-26 | 2005-08-04 | Kaijo Corp | System, method, and program for managing device data |
| JP5192122B2 (en) * | 2005-01-19 | 2013-05-08 | 東京エレクトロン株式会社 | Inspection method and inspection program for substrate processing apparatus |
| CN101314810A (en) * | 2008-06-19 | 2008-12-03 | 广东世创金属科技有限公司 | Residual heat utilization and pre-heating temperature elevation system of heat treatment furnace |
| JP2010206081A (en) * | 2009-03-05 | 2010-09-16 | Tokyo Electron Ltd | Cooling method and cooling system for body to be heated, and substrate processing apparatus with the cooling system |
-
2012
- 2012-03-08 JP JP2012051730A patent/JP5965680B2/en active Active
-
2013
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI358077B (en) * | 2004-02-11 | 2012-02-11 | Applied Materials Inc | Cleaning of chamber components |
| US20060219361A1 (en) * | 2005-04-01 | 2006-10-05 | Lam Research Corporation | High strip rate downstream chamber |
| TW200903600A (en) * | 2007-05-08 | 2009-01-16 | Applied Materials Inc | Substrate cleaning chamber and cleaning and conditioning methods |
| TW201137969A (en) * | 2009-12-10 | 2011-11-01 | Tokyo Electron Ltd | Plasma process apparatus |
| TWM489359U (en) * | 2014-05-22 | 2014-11-01 | Po-Jui Lin | Multi-functional fiddle slip stopper |
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