201137969 六、發明說明： 【發明所屬之技術領域】 本發明是有關電漿處理裝置，詳細是有關 置之可溫度調節的保護板的隔熱機構。 【先前技術】 在FPD (平面直角顯示器）的製造工程中 的玻璃基板進行電漿蝕刻、電漿灰化、電漿成 電漿處理。進行如此的電漿處理的裝置有平行 漿處理裝置或感應耦合電漿（ICP: Inductiv Plasma)處理裝置等爲人所知。 在此，於各種電漿處理裝置，因電漿的產 內的溫度會上昇，但通常處理室內壁附近的電 所以在處理室內產生溫度分布，因爲此溫度分 應生成物堆積於處理容器的內面之情形。特別 型基板那樣的大型裝置中，因爲處理容器的熱 器的表面積也大，所以容易放熱，在處理室內 度分布，除了反應生成物的堆積變多，電漿處 一性也會有不良的影響之虞。於是，在電漿處 在處理容器的壁或覆蓋壁面的構件中設置使熱 medium)流動的流路（稱熱媒流路）來進行處 度調節。 有關上述溫度調節’例如在專利文獻1中 處理裝置，其係具備： 電漿處理裝 1是對FPD用 膜等的各種 平板型的電 ely Coupled 生而處理室 漿密度低， 布，會有反 是在處理大 容量大，容 容易產生溫 理的面內均 理裝置中， 媒（h e a t i n g 理容器的溫 揭示一電漿 -5- 201137969 溫調用流路，其係於設成覆蓋電漿處理裝置的處理容 器的壁部之導電體所構成的內壁板中流動溫調用媒體； 導入口，其係用以從處理容器的外部導入溫調用媒體 :及 排出口，其係用以將溫調用媒體排出至處理容器的外 部。 並且，在專利文獻2中揭示一真空裝置，其係於真空 容器的內壁安裝防著板，在此防著板本體配設用以流動溫 媒的溫媒管及用以流動冷媒的冷媒管，在氣體的吸引開始 初期流動溫媒而來加熱防著板。 〔先行技術文献〕 〔專利文獻〕 〔專利文獻1〕特開2007-242474號公報 〔專利文獻2〕特開平9 - 1 5 7 8 3 2號公報 【發明內容】 (發明所欲解決的課題） 然而’在以往的電漿處理裝置的溫度調節機構中會有 以下所示的問題。首先’在處理室的壁本身設置熱媒流路 的方法（第1方法），處理室的壁爲了維持真空狀態而形 成堅固的構造’處理室的壁本身的熱容量大，放熱容易， 因此會有溫度控制難的問題。又，爲了調整熱容量大、放 熱容易的處理室的壁本身的溫度，用以在熱媒流路流動熱 媒的設備會有大型化，導致成本提高的問題。又，由於熱 -6- 201137969 媒流路是形成於處理容器的壁的一部分，所以在處理容器 的部位產生溫度分布，因爲此溫度分布，在處理容器的壁 產生熱應變而使得壁彎曲，會有在開閉面洩漏，或電性的 返回電路難以正常形成而造成放電不安定的情形。並且， 在處理容器的側壁設置溫度調節機構時，因爲熱傳導，處 理容器的底部會形成高溫，所欲使下部電極形成低溫時， 會有下部電極的溫度控制難的問題。 又，如專利文獻1、2那樣，在覆蓋處理室的壁面的內 壁板或防著板設置熱媒流路的方法（第2方法）相較於在 處理室的壁本身設置熱媒流路的第1方法，因爲熱容量或 放熱小’所以可使溫度調節設備簡素化，且可使溫度的控 制性提升。但，專利文獻1 ' 2的方法在處理室的壁面與內 壁板或防著板之間有間隙，在此間隙中會有在電漿處理所 產生的反應生成物堆積，或因爲殘留於間隙的空氣造成抽 真空的時間變長等的問題產生。並且，在內壁板與處理室 的壁之間隙也會有產生異常放電（電弧）的疑慮。 又’專利文獻1中’內壁板是藉由以絕緣體所構成的 固定構件來固定於處理室的內壁，此固定構件未考慮隔熱 性’因此內壁板的熱會經由固定構件來移動至處理室的壁 ，受熱容量大、放熱容易的處理容器的影響，而亦有內壁 板的溫度控制難的問題發生。 本發明是有鑑於該問題點而硏發者，其目的是在於提 供一種可一面使溫度調節設備簡素化，一面防止在處理容 器內的附著物或電弧的發生之電漿處理裝置。 -7- 201137969 (用以解決課題的手段） 本發明的電漿處理裝置徵係具備： 處理容器，其係形成處理被處理基板的處理室； 載置台，其係設於前述處理室內，載置前述被處理基 板： 處理氣體供給裝置，其係對前述處理室內供給處理氣 體； 排氣裝置，其係使前述處理室內形成真空狀態； 電漿生成手段，其係使前述處理氣體的電漿生成於前 述處理室內； 保護板，其係配置於前述處理容器的壁的內側； 溫度調節手段，其係調節前述保護板的溫度；及 隔熱構件，其係緊貼於前述處理容器的內壁面與前述 保護板之間來安裝，遮斷或抑制該等之間的熱傳導。 本發明的電漿處理裝置係前述電漿生成手段可爲感應 耦合方式的電漿生成手段，其係具有：設於前述處理室的 外側，在前述處理室內形成感應電場的天線、及設於前述 天線與前述處理室之間的介電質壁、及對前述天線供給高 頻電力，而使感應電場形成於前述處理室內的高頻電源。 此情況，更具備：對前述載置台供給高頻電力而使形 成偏壓電場的高頻電源， 前述保護板係被電性連接至前述處理容器，作爲對前 述偏壓電場的陽極電極作用。 -8- 201137969 又’本發明的電漿處理裝置可具備：覆蓋前述隔熱構 件的端部的露出面的一部分或全部之遮蔽構件。 又’本發明的電漿處理裝置中，前述保護板的下端部 可接觸於前述處理容器的底面，前述保護板的上端部、或 上端部及側端部係以前述遮蔽構件所覆蓋。 又’本發明的電漿處理裝置中，前述隔熱構件可具有 :隔熱性芯構件、及由被覆該隔熱性芯構件的耐電漿性材 料所構成的被覆層。 又’本發明的電漿處理裝置中，前述隔熱構件可具有 絕緣性’前述保護板可與前述處理容器電性上非連接配置 。此情況’前述隔熱構件的厚度可依部位而變化，或前述 隔熱構件的介電常數可依部位而變化。又，前述隔熱構件 可藉由介電常數不同的複數個構件所構成。又，本發明的 電漿處理裝置中，前述隔熱構件可具有疊合絕緣性構件與 隔熱性構件的層疊構造。 又，本發明的電漿處理裝置中，在前述保護板的內部 形成有熱媒的流路，前述溫度調節手段可爲設於前述處理 容器的外側，使前述熱媒循環於前述保護板的前述流路的 冷卻機構。 〔發明的效果〕 若根據本發明的電漿處理裝置，則會將自電漿保護處 理容器的保護板構成可溫度調節，且使隔熱構件介於處理 容器的內壁面與保護板之間，藉此確實地進行保護板的溫 -9- 201137969 度控制。亦即，可藉由隔熱構件來將處理容器的壁與保護 板確實地熱分離，因此可遮斷或抑制從熱容量小的保護板 往熱容量大的處理容器之熱傳導，保護板的溫度控制變得 容易且可使溫度調節設備小型化。又，若根據本發明，則 由於不需要將處理容器的壁本身予以溫度調節，所以可防 止例如因爲加熱所產生的熱應變而造成處理容器的壁彎曲 在開閉面產生洩漏，或電流的返回電路難取得而放電形成 不安定。又，由於例如不加熱處理容器的壁本身，所以也 不會有因爲從處理容器往載置台的熱傳導而造成載置台的 溫度控制變難之類的問題發生。 又，若根據本發明，則由於使隔熱構件介於處理容器 的壁面與保護板之間而使得多餘的間隙不存在，所以不會 有電漿處理的反應生成物堆積於該間隙，或處理室的抽真 空的時間變長的問題發生。又，藉由使介在隔熱構件，可 抑制處理容器的壁面與保護板之間的異常放電。 【實施方式】 以下，參照圖面來說明有關本發明之一實施形態的感 應耦合電漿處理裝置。首先，圖1是模式性地顯示本實施 形態的感應耦合電漿處理裝置的構成的剖面圖，圖2是擴 大圖1的A部的剖面圖。圖1所示的感應耦合電漿處理裝置1 是例如對於FPD用的玻璃基板（以下簡稱「基板」）S進行 電漿處理者。FPD例如有液晶顯示器（LCD : Liquid Crystal Display)、電致發光（EL: Electro Luminescence -10- 201137969 )顯示器、電漿顯示器面板（PDP: Plasma Display panei )等。 感應親合電發處理裝置1是具備處理室5，該處理室5 是藉由作爲處理容器的本體容器2、及配置於此本體容器2 的上部的介電質壁6所構成。介電質壁6是構成處理室5的 頂棚部分。處理室5是被保持於氣密，於此對基板S進行電 漿處理。 本體容器2可爲具有4個側壁2a的方筒形狀或圓筒形狀 。本體容器2的材料是使用鋁、鋁合金等的導電性材料。 當本體容器2的材料爲使用鋁時，以不會從本體容器2的內 壁面產生污染物的方式，對本體容器2的內壁面實施防蝕 鋁處理（陽極氧化處理）。並且，本體容器2被接地。 介電質壁6是形成具有大致正方形形狀的上面及底面 之板狀。介電質壁6是藉由介電質材料所形成。介電質壁6 的材料是例如使用αι2ο3等的陶瓷或石英。 感應耦合電漿處理裝置1是更具備支撐架7，作爲支撐 介電質壁6的支撐構件。支撐架7是被安裝於本體容器2的 側壁2a。 在本體容器2的外部設置氣體供給裝置20。氣體供給 裝置20是經由途中分岐的氣體供給管2 1來連接至形成於介 電質壁6的下面之複數的氣體噴出口 16。氣體供給裝置20 是用以供給使用於電漿處理的處理氣體者。在進行電漿處 埋時，處理氣體是經由氣體供給管21、複數的氣體噴出口 Μ來供給至處理室5內。處理氣體是例如使用SF6氣體、 -11 - 201137969 CF4氣體。另外，亦可爲例如在本體容器2的側壁2a設置氣 體導入部，由此來導入處理氣體至處理室5內之構成。 感應耦合電漿處理裝置1是在處理室5的外部具備配置 於介電質壁6上方的高頻天線（以下簡稱天線）1 3。天線 1 3是例如形成大致正方形的平面方形螺旋形狀。天線1 3是 配置於介電質壁6的上面之上。 在本體容器2的外部設有整合器14、及高頻電源15。 天線1 3的一端是藉由給電線1 5 a經整合器1 4來連接至高頻 電源1 5。天線1 3的另一端是被連接至本體容器2的內壁， 經由本體容器2來接地。在對基板S進行電漿處理時，是從 高頻電源1 5供給感應電場形成用的高頻電力（例如 13.56MHz的高頻電力）至天線13»因此，藉由天線13在處 理室5內形成感應電場。此感應電場是使處理氣體轉化成 電漿。而且，介電質壁6、天線1 3、整合器1 4、給電線1 5a 及高頻電源15是構成電漿生成手段。 感應耦合電漿處理裝置1更具備：用以載置基板S的基 座（載置台）22、絕緣體框24、支柱25、波紋管26、及未 圖示的閘閥。支柱25是被連接至設置在本體容器2的下方 之未圖示的昇降裝置，通過形成於本體容器2的底部的開 口部來突出至處理室5內。並且，支柱25具有中空部。絕 緣體框24是被設置於支柱25上。此絕緣體框24是形成上部 開口的箱狀。在絕緣體框24的底部形成有連接於支柱25的 中空部的開口部。波紋管26是包圍支柱25，氣密連接至絕 緣體框24及本體容器2的底部內壁。藉此，維持處理室5的 -12- 201137969 氣密性。 基座22是被收容於絕緣體框24內。基座22是具有用以 載置基板S的載置面22A。基座22的材料是例如使用鋁等的 導電性材料。當基座22的材料爲使用鋁時，以不會從表面 產生污染物的方式，對基座22的表面實施防蝕鋁處理（陽 極氧化處理）。 在本體容器2的外部更設有整合器28及高頻電源29。 基座22是經由在絕緣體框24的開口部及支柱25的中空部所 插通的通電棒30來連接至整合器28，更經由此整合器28來 連接至高頻電源29。在對基板S進行電漿處理時，是從高 頻電源29供給偏壓用的高頻電力（例如3.2MHz的高頻電力 )至基座22。此高頻電力是爲了將電漿中的離子有效地引 入至被載置於基座22上的基板S而使用者。 另外，未圖示的閘閥是被設於本體容器2的側壁2a。 閘閥具有開閉功能，在閉狀態下維持處理室5的氣密性， 且在開狀態下可將基板S移送於處理室5與外部之間。 在本體容器2的外部更設有排氣裝置31。排氣裝置31 是經由被連接至本體容器2的底部之排氣管32來連接至處 理室5。在對基板S進行電漿處理時，排氣裝置3 1是將處理 室5內的氣體予以排氣，將處理室5內維持於真空或減壓環 境。 在離構成處理室5的本體容器2的4個側壁2a (圖1的左 右及未圖示的前側及後側）的各個內壁面一間距的位置配 備有與該內壁面大致平行的保護板41。此保護板41的第1 -13- 201137969 功能是自電漿保護本體容器2的內壁面。又，保護板4 1的 第2功能是取代本體容器2的內壁面而使能夠溫度調節（例 如加熱），防止反應生成物堆積於處理室5內。爲了此目 的，在保護板41的內部設有熱媒流路43，構成可使熱媒流 通於此。並且，在保護板41與本體容器2的側壁2a之間， 隔熱構件42是緊貼於保護板41與側壁2a的內壁面來配備。 如上述般，在電漿處理裝置中基於反應生成物的附著 防止等的目的，需要調節本體容器2或保護板的溫度。作 爲溫度調節機構，在本體容器2的壁本身設置熱媒流路的 構造，因爲本體容器2的大的熱容量或放熱，會有溫度調 節難，溫度調節設備大型化的問題、或因爲本體容器2的 溫度分布，會有產生熱應變的問題發生。使緊貼於本體容 器2的內壁面來配置設有熱媒流路的保護板時，也會產生 與上述同樣的問題。並且，在本體容器2的壁面的內側， 使設有熱媒流路的保護板離開一間距來配置時，會有在本 體容器2的壁面與該構件之間的間隙堆積電漿處理的反應 生成物，或抽真空的時間變長的問題、或在本體容器2的 壁面與該構件之間產生異常放電的問題發生》 於是，本责施形態是在保護板4 1設置熱媒流路43，且 在本體容器2的內壁面與保護板41之間，使遮斷或抑制該 等之間的熱傳導的隔熱構件42緊貼而介在配備的構成。如 擴大圖1的A部的圖2所示般，在保護板4 1的內部形成熱媒 流路43，在熱媒流路43的一端及他端設有導入部43 a及排 出部43b »然後，導入部43 a是被連接至貫通本體容器2及 -14- 201137969 隔熱構件42的導入管44’排出部43b是被連接至貫通本體 容器2及隔熱構件42的排出管45，各個的配管是與設於本 體容器2的外部之冷卻單元50連接。冷卻單元50是例如具 備未圖示的熱交換器或循環泵等。前述導入管44、排出管 45及冷卻單元50是構成溫度調節手段。 此保護板41的形狀爲任意，但可爲覆蓋形成處理室5 的本體容器2的各側壁2a的內面的大致全面之矩形形狀。 爲了容易設置保護板41，而亦可在介電質壁6與保護板41 的上端之間設置間隔。並且，在將形成處理室5的本體容 器2設爲圓筒形狀時，可爲直徑比本體容器2更小的圓筒形 狀或將圓筒分割成任意數的曲面形狀。另外，在本體容器 2的側壁2a配置有閘閥或基板S的搬送機構、用以確認電漿 處理的狀態的窗等時，只要是避開該部分的形狀即可，並 非一定要是覆蓋側壁2a的全面。 並且，保護板41對處理氣體或電漿具有耐性，可耐本 體容器2內的到達溫度（例如120〜150 °C)，且可以具有 能夠形成熱媒流路4 3的強度的材料所形成。保護板4 1可例 如使用不鏽鋼或與本體容器2同樣的鋁、鋁合金等的金屬 材料。當保護板4 1的材料爲使用鋁時，較理想是施以防蝕 鋁處理（陽極氧化處理），而使不會從保護板4 1的表面產 生污染物。 隔熱構件42是塡埋保護板41與本體容器2的側壁2a的 內面之間的形狀的板材，可以和保護板4 1大致相等的面積 來成爲同樣的矩形形狀。並且，當形成處理室5的本體容 -15- 201137969 器2爲圓筒形狀時，可爲其外徑與本體容器2的內徑大致相 等，其內徑與保護板4 1的外徑大致相等的圓筒形狀，或將 圓筒分割成任意數的曲面形狀。 此隔熱構件42可耐本體容器2內的到達溫度，可以熱 傳導率小的材料所形成。例如，當本體容器2內的到達溫 度爲120〜1 5 0°C時，可使用氟樹脂（PTFE )或聚醢亞胺、 聚醯胺醯亞胺、聚苯硫醚（PPS)、聚醚颯（PFS)、聚颯 (PSF )、環氧樹脂玻璃等的樹脂材料、氟橡膠（FKM ) 、矽橡膠（Q)、氟矽橡膠（FVMQ)、全氟聚醚系橡膠（ FO)、丙烯酸橡膠（ACM)、乙烯丙烯橡膠（EPM)等的 橡膠材料等。 並且，保護板41及隔熱構件42是藉由固定構件46來固 定於本體容器2。在本货施形態是例如使用金屬製的螺絲 作爲固定構件46，藉此使保護板4 1與本體容器2電性連接 。另外，保護板4 1及隔熱構件42的固定構造並非限於螺絲 固定，亦可使保護板41的端部卡止於設在本體容器2的內 壁的突起等，藉此來固定保護板4 1及隔熱構件42，或者將 連接至保護板41的導入部43 a的導入管44或連接至排出部 43b的排出管45固定於本體容器2，藉此來固定保護板41及 隔熱構件42。 熱媒是藉由未圖示的循環泵的作用來一邊循環於保護 板4 1與設在裝置的外部之作爲熱媒循環裝置的冷卻單元5 〇 之間’一邊昇溫或冷卻保護板4 1。另外，亦可在本體容器 2內設置未圖示的熱電偶等的溫度檢測部，根據該檢測値 -16- 201137969 ，經由未圖示的溫度控制器來進行熱媒的溫度調節，控制 保護板4 1的外表面溫度。 其次，說明有關利用以上那樣構成的感應耦合電漿處 理裝置1來對基板S實施電漿處理時的處理動作。首先，在 開啓未圖示的閘閥之狀態下，藉由未圖示的搬送機構來將 基板S搬入處理室5內，載置於基座22的載置面22A之後， 藉由靜電吸盤等來將基板S固定於基座22上。 其次，從氣體供給裝置20經由氣體供給管2 1、複數的 氣體噴出口 16來將處理氣體供給至處理室5內，且藉由排 氣裝置3 1經排氣管3 2來對處理室5內進行真空排氣，藉此 將處理室內維持於例如1.3 3 Pa程度的壓力環境。 其次，從高頻電源15將13.56MHz的高頻供給至天線13 ，藉此經由介電質壁6在處理室5內形成均一的感應電場。 藉由如此形成的感應電場在處理室5內使處理氣體電漿化 ，生成高密度的感應耦合電漿。如此被生成的電漿中的離 子是藉由偏壓電場來有效地引入至基板S，對基板S實施均 一的電漿處理，該偏壓電場是藉由從高頻電源29來對基座 22供給的高頻電力所產生者。 在此電漿處理時，從設於外部的冷卻單元50經由導入 管44、保護板41的導入部43 a來導入熱媒至熱媒流路43 ’ 經由保護板41的排出部43b、排出管45來排出熱媒’循環 於冷卻單元50。在熱媒的循環過程，本體容器2的內部會 被控制於所定的溫度。在感應耦合電漿處理裝置1對基板S 進行電漿蝕刻時，通常爲了防止反應生成物附著於保護板 -17- 201137969 4 1，而以加熱保護板4 1的目的使用熱媒。此時’因爲隔熱 構件42的存在，保護板41的熱幾乎不會傳至本體容器2° 如以上說明那樣，在形成處理室5的本體容器2的側壁 2a的內側配置設有熱媒流路43的保護板4 1，且以隔熱構件 42來塡埋本體容器2的側壁2 a與保護板4 1之間’藉此可將 本體容器2與保護板4 1予以確W地熱分離。因此’可抑制 熱容量大容易放熱之本體容器2的影響，進行高精度的溫 度控制，且可實現溫度調節設備的小型化。並且，藉由隔 熱構件42來抑制保護板41的熱傳至本體容器2的側壁2a’ 藉此可防止在本體容器2產生溫度分布而發生熱應變。 並且，使隔熱構件42緊貼介於本體容器2的側壁2a與 保護板41之間，藉此不使在側壁2a的內面與保護板41之間 產生空間。因此，也不會有電漿處理的反應生成物堆積於 側壁2a的內面與保護板4 1之間的情形。又，亦可抑制因爲 側壁2a的內面與保護板4 1之間的空間，抽真空的時間變長 ，或在本體容器2的側壁2a與保護板41之間產生異常放電 的情形。 而且，在本實施形態是取代本體容器2的側壁2 a，以 保護板41作爲對偏壓電場的陽極電極作用，該偏壓電場是 藉由從高頻電源29來對基座22供給的高頻電力所形成。在 本β施形態是藉由導電性的固定構件4 6來確保保護板4 1與 本體容器2的側壁2a之間的導通，藉此作爲保護板41的陽 極電極的功能不會有所損。其結果，不會有妨礙從基座22 到保護板41、側壁2a及底壁2b (本體容器2)甚至整合器 • 18 - 201137969 2 8的偏壓電場的返回電路的形成之情形，可使偏壓電場安 定形成，而且可提高在處理室5內所生成的電漿的安定性 〇 其次，舉本發明的變形例，但以和圖1所示的感應耦 合電漿處理裝置1不同的構成爲中心進行說明，有關和圖1 相同的構成則省略說明。 [第1變形例] 圖3是表示對應於圖1的A部的部分的第1變形例的剖面 圖。就圖1及圖2的構造而言，因爲隔熱構件42的一部分（ 上部或側部）露出，所以在電漿處理中，隔熱構件42的露 出部會暴露於電漿，恐有隔熱構件42被削去，或變質 '變 形之虞。於是，在第1變形例，如圖3所示，在隔熱構件4 2 的上端配設至少覆蓋隔熱構件42的露出部之遮蔽構件47。 此遮蔽構件47只要是覆蓋隔熱構件42的露出部的至少 一部分的形狀即可，亦可爲只覆蓋隔熱構件42的上部之形 狀。並且’如從圖3的箭號方向來看的圖4那樣，當保護板 41比本體容器2的側壁2a的內面其尺寸更小時，亦可爲覆 蓋保護板4 1與隔熱構件42的上部及側部之形狀。而且，當 本體容器2的底壁2b的內面與保護板41的底部未緊貼時， 恐有電漿從該間隙侵入之虞，因此亦可爲連隔熱構件42的 底部也覆蓋的形狀。此遮蔽構件47可與保護板41一體形成 ’或作爲別的構件形成，或藉由焊接等來固定，或藉由螺 絲固定或嵌合等來可裝卸地固定，其厚度並無特別加以限 -19- 201137969 定。 又，遮蔽構件47可使用具有遮斷電漿的功能之材料戶斤 形成，例如可使用與保護板4 1相同的材料（不鏽鋼或纟呂、 鋁合金等的金屬材料）。在使用鋁作爲遮蔽構件47的材_ 時，較理想是施以防蝕鋁處理（陽極氧化處理），而使不 會從遮蔽構件47的表面產生污染物。 藉由如此以遮蔽構件47來保護隔熱構件42的露出部， 可確實地防止因電漿的暴露造成隔熱構件42的變質或變形 ’進而能夠提高隔熱性能的可靠度。並且，藉由不使由樹 脂材料或橡膠材料所構成的隔熱構件42露出於處理室5內 ’不會從隔熱構件42放出成爲雜質的氣體或成爲微粒原因 的粉塵等，因此可提高電漿處理的可靠度。 在圖2〜圖4是以單一的構件來構成隔熱構件42，但亦 可組合複數的構件來形成。例如圖5所示，若以耐電漿性 材料的被覆部42B來覆蓋隔熱性芯構件42A的表面之構造， 則不必像第1變形例那樣設置遮蔽構件47，可使構成簡單 。即使隔熱構件42的端部露出時，還是可抑制隔熱構件42 的變質或變形’可抑制來自隔熱構件42的氣體或粉塵的放 出’進而能夠提高可靠度。耐電漿性材料的被覆部42B只 要是按照使用於電漿處理的氣體種類來適當選擇即可，但 作爲化學安定性高的材料是例如可舉氟樹脂（pTFE )等。 [第2變形例] 在舉感應鍋合電漿處理裝置1爲例來說明的上述實施 •20- 201137969 形態中，圖2是使保護板41的下部接觸於本體容器2，且圖 3是甚至保護板41的上部也經由遮蔽構件47來連接至本體 容器2的構造，容許保護板41與本體容器2的電性連接。然 後，更使用導電性的固定構件46來確保保護板4 1與本體容 器2 (側壁2a)的電性連接。這是爲了在感應耦合電漿處 理裝置1中使基座22與保護板41成爲對向電極而被電容耦 合，而謀求被接地的本體容器2的側壁2a與保護板41的導 通，經由保護板41來使偏壓電場的返回電路正常地形成之 目的。 但，爲了抑制基座22周邊附近的不要電漿的發生，亦 可將保護板4 1形成電性浮動狀態。例如，若將隔熱構件42 設爲介電質，則藉由使保護板4 1形成電性浮動狀態，可在 保護板4 1與本體容器2的側壁2a之間形成電容器。 爲了將保護板4 1形成電性浮動狀態，而需要使本體容 器2與保護板4 1形成電性非連接狀態。於是，在第2變形例 是除了隔熱性以外還以電氣傳導度小的絕緣性材料來形成 隔熱構件42，且如圖6所示，成爲使保護板4 1的下部離開 本體容器2的底面來配置的構成。又，如圖7所示，亦可爲 在保護板4 1的下部與本體容器2的底面之間使隔熱構件42 插入的構成。絕緣性的材料可舉氟樹脂（PTFE )、聚醚颯 (PFS )、聚醯胺醯亞胺、橡膠材料等。 [第3變形例] 在使保護板4 1形成電性浮動狀態時，藉由使隔熱構件 -21 - 201137969 42的厚度依場所而變化，可使形成於保護板41與本體容器 2的側壁2a之間的電容器的每單位面積的電容依場所而改 變。例如圖8所示，在與本體容器2的側壁2 a的上部鄰接的 部位是使隔熱構件42形成薄，在與本體容器2的側壁2a的 下部鄰接的部位是使隔熱構件42形成厚，藉此可使保護板 41與本體容器2的側壁2a之間的電容器的每單位面積的電 容在側壁2a的上部形成大，在側壁2a的下部形成小。其結 果，比起電容器的每單位面積的電容小的側壁2a的下部的 路徑（虛線），偏壓電場的返回電流I是更容易通過電容 大的側壁2a的上部的路徑（實線），因此可抑制基座22的 周邊附近的不要的電漿的發生。 [第4變形例] 在使保護板4 1形成電性浮動狀態時，藉由使隔熱構件 42的介電常數依場所而變化，可使形成於保護板41與本體 容器2的側壁2 a之間的電容器的每單位面積的電容依場所 而改變。例如圖9所示的例子，在與本體容器2的側壁2a的 上部鄰接的部位是使隔熱構件42的介電常數形成相對性地 大，在與本體容器2的側壁2a的下部鄰接的部位是使隔熱 構件4 2的介電常數形成相對性地小，藉此可使保護板4 1與 本體容器2的側壁2a之間的電容器的每單位面積的電容在 側壁2a的上部形成大’在側壁2a的下部形成小。其結果’ 比起電容器的每單位面積的電容小的側壁2a的下部的路徑 (虛線），偏壓電場的返回電流I更容易通過電容大的側 -22- 201137969 壁2 a的上部的路徑（實線），因此可抑制基座2 2周邊附近 的不要的電漿的發生。爲了使隔熱構件42的介電常數依場 所而改變化，可舉在構成隔熱構件4 2的合成樹脂等的材料 中混合可調節介電常數的其他材料者。 而且，藉由使隔熱構件42的材質依場所而改變，亦可 使形成於保護板4 1與本體容器2的側壁2 a之間的電容器的 每單位面積的電容依場所而改變。例如圖1 0所示，在與本 體容器2的側壁2a上部鄰接的部位是配置相對性介電常數 大的隔熱構件42C，在與本體容器2的側壁2a的下部鄰接的 部位是配置相對性介電常數小的隔熱構件4 2 D，藉此可使 保護板4 1與本體容器2的側壁2 a之間的電容器的每單位面 積的電容在側壁2a的上部形成大，在側壁2a的下部形成小 。其結果，比起電容器的每單位面積的電容小的側壁2a的 下部的路徑（虛線），偏壓電場的返回電流I更容易通過 電容大的側壁2 a的上部的路徑（實線），因此可抑制基座 22周邊附近的不要的電漿的發生。另外，在圖10是只使用 介電常數大的隔熱構件42C及介電常數小的隔熱構件42D的 2種類的隔熱構件，但並非限於2種類，亦可使用3種類以 上的隔熱構件。例如，亦可在介電常數大的隔熱構件與介 電常數小的隔熱構件之間設置具有中程度的介電常數之隔 熱構件。 如以上的第2〜第4變形例所示，藉由將保護板4 1配置 成不與本體容器2電性連接，將隔熱構件42不僅作爲隔熱 構件，亦可作爲介電構件活用。 -23- 201137969 又’由於隔熱性高的構件不限於絕緣性高，所以在上 述第2〜第4變形例中，亦可如關1 1所示，重疊隔熱性的板 材42E與絕緣性的板材42F來構成隔熱構件42。絕緣性的板 材42F是例如可舉氟樹脂（PTFE )、聚醚碾（PFS )、聚 醯胺醯亞胺、橡膠材料等。 另外，不限於圖1所示的感應耦合電漿處理裝置1，例 如在專利文獻1所記載那樣的平行平板方式的電漿處理裝 置中’在上部電極與下部電極（基座）之間需要經由電漿 來使電容耦合。該情況，基於防止經由保護板往處理容器 的側壁之電流的短路的目的，亦可藉由上述第2〜第4變形 例所示的構成來使保護板形成電性浮動狀態，藉此使電漿 安定地生成。 以上是以所例示的目的來詳細說明本發明的實施形態 ，但本發明並非限於上述實施形態。該當業者可在不脫離 本發明的思想及範圍下取得更多的改變，該等亦含於本發 明的範園內。例如，上述實施形態是舉感應耦合電漿處理 裝置1爲例，但本發明亦可適用於例如平行平板電漿處理 裝置、表面波電發處理裝置、ECR( Electron Cyclotron Resonance )電漿處理裝置、螺旋波電漿處理裝置等其他 方式的電漿處理裝置。又，若爲腔室內的溫度調節必要的 裝置，則不限於乾蝕刻裝置，在成膜裝置或灰化裝置等中 亦可同等適用。 又，上述贲施形態是舉使熱媒流動的冷卻構造，作爲 保護板4 1的溫度調節手段，但可爲例如使用加熱器等的發 -24- 201137969 熱體的構造、或組合該等的構造。 又，本發明並非限於以FPD用基板作爲被處理體’例 如亦可適用於以半導體晶圓或太陽電池用基板作爲被處理 體時。 【圖式簡單說明】 圖1是模式性地顯示本發明之一實施形態的感應耦合 電漿處理裝置的構成的剖面圖。 圖2是擴大圖1的A部的剖面圖。 圖3是表示第1變形例設置遮蔽構件的狀態的剖面圖。 圖4是說明由圖3的箭號方向來看的遮蔽構件的配設狀 態的圖面。 圖5是表示隔熱構件的別的構成例的剖面圖。 圖6是表示第2變形例的隔熱構件的安裝狀態的剖面圖 〇 圖7是表示隔熱構件的別的構成例的剖面圖。 圖8是表示第3變形例的隔熱構件的安裝狀態的剖面圖 〇 圖9是表示第4變形例的隔熱構件的安裝狀態的剖面圖 〇 圖1 〇是表示第4變形例的隔熱構件的另外別的構成例 的剖面圖。 圖1 1是表示隔熱構件的另外別的構成例的剖面圖。 -25- 201137969 【主要元件符號說明】 1 :電漿處理裝置 2 :本體容器 5 :處理室 6 :介電質壁 7 :支撐架 1 3 :天線 14 :整合器 1 5 :商頻電源 16 :氣體噴出口 20 :氣體供給裝置 2 1 :氣體供給管 22 :基座 22A :載置面 24 :絕緣體框 2 5 :支柱 2 6 :波紋管 28 :整合器 2 9 :商頻電源 3 1 :排氣裝置 3 2 :排氣管 4 1 :保護板 4 2 :隔熱構件 42A :隔熱性芯構件 201137969 4 2 B :被覆部 42C :介電常數大的隔熱構件 42D :介電常數小的隔熱構件 4 2 E :隔熱性的板材 42F :絕緣性的板材 4 3 :熱媒流路 43a :導入部 43b :排出部 44 ··導入管 4 5 :排出管 46 :固定構件 47 :遮蔽構件 5 0 :冷卻單元 -27-201137969 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a plasma processing apparatus, and more particularly to an insulation mechanism for a temperature-adjustable protective plate. [Prior Art] The glass substrate in the manufacturing process of the FPD (Planar Right Angle Display) is subjected to plasma etching, plasma ashing, and plasma plasma processing. A device for performing such plasma treatment is known as a parallel slurry treatment device or an inductivation plasma (ICP: Inductiv Plasma) treatment device. Here, in various plasma processing apparatuses, the temperature inside the plasma is increased, but the electricity in the vicinity of the inner wall is usually treated, so that a temperature distribution is generated in the processing chamber because the temperature is distributed in the processing container. The situation. In a large-sized apparatus such as a special-type substrate, since the surface area of the heat exchanger of the processing container is large, it is easy to release heat, and in the processing room, the deposition of the reaction product increases, and the plasma is also adversely affected. After that. Then, a flow path (referred to as a heat medium flow path) through which the heat medium flows is provided in the wall of the processing container or the member covering the wall surface at the plasma to perform the degree adjustment. In the processing apparatus of the patent document 1, the plasma processing apparatus 1 is equipped with various flat type electric ely couples, such as a film for FPD, and the processing chamber density is low, and the cloth may have a reverse In the in-plane uniformity device which is large in capacity and easy to generate temperature, the medium (the temperature of the heating container reveals a plasma--5-201137969 temperature calling flow path, which is set to cover the plasma processing device a flow medium in the inner wall panel formed by the electrical conductor of the wall of the processing container; the inlet is for introducing a warm calling medium from the outside of the processing container: and a discharge port for calling the medium Discharged to the outside of the processing container. Further, in Patent Document 2, a vacuum device is disclosed which is attached to the inner wall of the vacuum container, and the anti-slip plate is disposed on the inner surface of the vacuum plate, and the temperature control tube for flowing the warm medium is disposed on the anti-plate body. In the refrigerant pipe for the flow of the refrigerant, the heat-preventing plate is heated in the initial stage of the gas suction. [Provisional Technical Documents] [Patent Document] [Patent Document 1] JP-A-2007-242474 [Patent Document 2] Japanese Unexamined Patent Application Publication No. Publication No. No. No. No. No. No. No. No. 9 - 1 5 7 8 3 2 (Problems to be Solved by the Invention) However, the temperature adjustment mechanism of the conventional plasma processing apparatus may have the following problems. First, a method of providing a heat medium flow path in the wall of the processing chamber (first method), the wall of the processing chamber is formed to maintain a vacuum state, and the wall of the processing chamber itself has a large heat capacity and is easy to release heat. In addition, in order to adjust the temperature of the wall of the processing chamber where the heat capacity is large and the heat release is easy, the equipment for flowing the heat medium in the heat medium flow path may be increased in size, resulting in a problem of cost increase. Since the heat-6-201137969 media flow path is formed in a part of the wall of the processing container, a temperature distribution is generated at the portion of the processing container, because this temperature distribution causes thermal strain in the wall of the processing container to cause the wall to bend, and there will be The opening and closing surface leaks, or the electrical return circuit is difficult to form normally and causes the discharge to be unstable. Moreover, when the temperature adjusting mechanism is disposed on the side wall of the processing container, Because of the heat conduction, a high temperature is formed at the bottom of the processing container, and when the lower electrode is formed to have a low temperature, there is a problem that temperature control of the lower electrode is difficult. Further, as in Patent Documents 1 and 2, the inner wall covering the wall surface of the processing chamber The method of providing a heat medium flow path by a plate or an anti-plate (the second method) is simpler than the first method of providing a heat medium flow path in the wall of the processing chamber because the heat capacity or the heat release is small. Moreover, the controllability of the temperature can be improved. However, the method of Patent Document 1 '2 has a gap between the wall surface of the processing chamber and the inner wall plate or the anti-plate, in which there is a plasma treatment. There is a problem that the reaction product is deposited or the time during which the vacuum is caused by the air remaining in the gap becomes long. Further, there is a concern that an abnormal discharge (arc) may occur in the gap between the inner wall plate and the wall of the processing chamber. Further, in the 'Patent Document 1', the inner wall plate is fixed to the inner wall of the processing chamber by a fixing member made of an insulator, and the fixing member does not consider heat insulation. Therefore, the heat of the inner wall plate is moved via the fixing member. The wall to the processing chamber is affected by the processing container having a large heat capacity and easy heat release, and there is also a problem that temperature control of the inner wall panel is difficult. The present invention has been made in view of the above problems, and an object thereof is to provide a plasma processing apparatus which can prevent the occurrence of deposits or arcs in a processing container while simplifying the temperature adjusting device. -7-201137969 (Means for Solving the Problem) The plasma processing apparatus according to the present invention includes: a processing chamber that forms a processing chamber for processing a substrate to be processed; and a mounting table that is placed in the processing chamber and placed The substrate to be processed: a processing gas supply device that supplies a processing gas to the processing chamber; an exhaust device that forms a vacuum state in the processing chamber; and a plasma generating device that generates a plasma of the processing gas a protective plate disposed inside the wall of the processing container; a temperature adjusting means for adjusting a temperature of the protective plate; and a heat insulating member attached to the inner wall surface of the processing container and the foregoing The protective plates are installed to interrupt or inhibit heat transfer between the plates. In the plasma processing apparatus of the present invention, the plasma generating means may be an inductively coupled plasma generating means, comprising: an antenna provided outside the processing chamber to form an induced electric field in the processing chamber; A dielectric wall between the antenna and the processing chamber, and a high-frequency power source that supplies high-frequency power to the antenna to form an induced electric field in the processing chamber. In this case, the high frequency power supply for supplying a high-frequency electric power to the mounting table to form a bias electric field is provided, and the protective plate is electrically connected to the processing container as an anode electrode for the bias electric field. . -8-201137969 Further, the plasma processing apparatus of the present invention may include a shielding member that covers a part or all of the exposed surface of the end portion of the heat insulating member. Further, in the plasma processing apparatus of the present invention, the lower end portion of the protective plate may be in contact with the bottom surface of the processing container, and the upper end portion, or the upper end portion and the side end portion of the protective plate may be covered by the shielding member. In the plasma processing apparatus of the present invention, the heat insulating member may include a heat insulating core member and a coating layer made of a plasma resistant material covering the heat insulating core member. Further, in the plasma processing apparatus of the present invention, the heat insulating member may have an insulating property. The protective plate may be electrically disconnected from the processing container. In this case, the thickness of the heat insulating member may vary depending on the portion, or the dielectric constant of the heat insulating member may vary depending on the portion. Further, the heat insulating member may be composed of a plurality of members having different dielectric constants. Further, in the plasma processing apparatus of the present invention, the heat insulating member may have a laminated structure in which an insulating member and a heat insulating member are laminated. Further, in the plasma processing apparatus of the present invention, a flow path of a heat medium is formed inside the protective plate, and the temperature adjusting means may be provided outside the processing container to circulate the heat medium to the protective plate. The cooling mechanism of the flow path. [Effects of the Invention] According to the plasma processing apparatus of the present invention, the protective sheet from the plasma protective treatment container is temperature-adjustable, and the heat insulating member is interposed between the inner wall surface of the processing container and the protective plate. This is used to reliably control the temperature of the protection panel - 201137969 degrees. That is, the wall of the processing container can be surely thermally separated from the protective plate by the heat insulating member, so that heat transfer from the protective plate having a small heat capacity to the processing container having a large heat capacity can be blocked or suppressed, and the temperature control of the protective plate becomes It is easy and can miniaturize the temperature adjustment device. Further, according to the present invention, since it is not necessary to temperature-adjust the wall of the processing container itself, it is possible to prevent the wall of the processing container from being bent at the opening and closing surface due to thermal strain generated by heating, for example, or a return circuit of current. Difficult to obtain and discharge formation is not stable. Further, for example, since the wall itself of the processing container is not heated, there is no problem that the temperature control of the mounting table becomes difficult due to heat conduction from the processing container to the mounting table. Moreover, according to the present invention, since the heat insulating member is interposed between the wall surface of the processing container and the protective plate, the excess gap does not exist, so that the reaction product which is not subjected to the plasma treatment is accumulated in the gap, or is processed. The problem of a long vacuuming time of the chamber occurs. Further, by interposing the heat insulating member, abnormal discharge between the wall surface of the processing container and the protective plate can be suppressed. [Embodiment] Hereinafter, an inductively coupled plasma processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. First, Fig. 1 is a cross-sectional view schematically showing a configuration of an inductively coupled plasma processing apparatus according to the present embodiment, and Fig. 2 is a cross-sectional view showing an enlarged portion A of Fig. 1. The inductively coupled plasma processing apparatus 1 shown in Fig. 1 is, for example, a plasma substrate for a glass substrate (hereinafter referred to as "substrate") S for FPD. The FPD includes, for example, a liquid crystal display (LCD: Liquid Crystal Display), an electroluminescence (EL: Electro Luminescence -10-201137969) display, and a plasma display panel (PDP: Plasma Display panei). The induction-inductive electro-thermal treatment device 1 includes a processing chamber 5 which is constituted by a main body container 2 as a processing container and a dielectric wall 6 disposed at an upper portion of the main body container 2. The dielectric wall 6 is a ceiling portion constituting the processing chamber 5. The processing chamber 5 is kept airtight, and the substrate S is subjected to plasma treatment. The body container 2 may have a square tube shape or a cylindrical shape having four side walls 2a. The material of the main body container 2 is a conductive material using aluminum, aluminum alloy or the like. When the material of the main body container 2 is aluminum, the inner wall surface of the main body container 2 is subjected to an alumite treatment (anodizing treatment) in such a manner that contaminants are not generated from the inner wall surface of the main body container 2. And, the body container 2 is grounded. The dielectric wall 6 is formed in a plate shape having an upper surface and a bottom surface having a substantially square shape. The dielectric wall 6 is formed by a dielectric material. The material of the dielectric wall 6 is, for example, ceramic or quartz using αι2ο3 or the like. The inductively coupled plasma processing apparatus 1 is further provided with a support frame 7 as a supporting member for supporting the dielectric wall 6. The support frame 7 is mounted to the side wall 2a of the body container 2. A gas supply device 20 is provided outside the main body container 2. The gas supply device 20 is connected to a plurality of gas discharge ports 16 formed on the lower surface of the dielectric wall 6 via a gas supply pipe 2 1 branched in the middle. The gas supply device 20 is for supplying a process gas used for plasma treatment. When the plasma is buried, the processing gas is supplied into the processing chamber 5 via the gas supply pipe 21 and the plurality of gas discharge ports. The treatment gas is, for example, SF6 gas, -11 - 201137969 CF4 gas. Further, for example, a configuration in which the gas introduction portion is provided in the side wall 2a of the main body container 2 to introduce the processing gas into the processing chamber 5 may be employed. The inductively coupled plasma processing apparatus 1 includes a high frequency antenna (hereinafter referred to as an antenna) 13 disposed above the dielectric wall 6 outside the processing chamber 5. The antenna 13 is, for example, a planar square spiral shape that forms a substantially square shape. The antenna 13 is disposed above the upper surface of the dielectric wall 6. An integrator 14 and a high frequency power source 15 are provided outside the main body container 2. One end of the antenna 13 is connected to the high frequency power source 15 by the power supply line 15 a via the integrator 14. The other end of the antenna 13 is connected to the inner wall of the body container 2, and is grounded via the body container 2. When the substrate S is subjected to plasma processing, high-frequency power for forming an induced electric field is supplied from the high-frequency power source 15 (for example, 13. The high frequency power of 56 MHz is supplied to the antenna 13», so that an induced electric field is formed in the processing chamber 5 by the antenna 13. This induced electric field converts the process gas into a plasma. Further, the dielectric wall 6, the antenna 13, the integrator 14, the power supply line 15a, and the high-frequency power source 15 constitute a plasma generating means. The inductively coupled plasma processing apparatus 1 further includes a base (mounting stage) 22 on which the substrate S is placed, an insulator frame 24, a support post 25, a bellows 26, and a gate valve (not shown). The stay 25 is connected to a lifting device (not shown) provided below the main body container 2, and protrudes into the processing chamber 5 through an opening formed in the bottom of the main body container 2. Further, the pillar 25 has a hollow portion. The insulator frame 24 is placed on the pillar 25. This insulator frame 24 is in the shape of a box forming an upper opening. An opening portion connected to the hollow portion of the pillar 25 is formed at the bottom of the insulator frame 24. The bellows 26 surrounds the post 25 and is hermetically connected to the insulating body frame 24 and the bottom inner wall of the body container 2. Thereby, the airtightness of the treatment chamber 5 from -12 to 201137969 is maintained. The susceptor 22 is housed in the insulator frame 24. The susceptor 22 has a mounting surface 22A on which the substrate S is placed. The material of the susceptor 22 is, for example, a conductive material using aluminum or the like. When the material of the susceptor 22 is aluminum, the surface of the susceptor 22 is subjected to an alumite treatment (anodizing treatment) in such a manner that no contaminants are generated from the surface. An integrator 28 and a high frequency power source 29 are further provided outside the main body container 2. The susceptor 22 is connected to the integrator 28 via an energizing rod 30 inserted through the opening of the insulator frame 24 and the hollow portion of the post 25, and is further connected to the high-frequency power source 29 via the integrator 28. When the substrate S is subjected to plasma processing, high-frequency power for biasing is supplied from the high-frequency power source 29 (for example, 3. 2MHz high frequency power) to the pedestal 22. This high frequency power is used to effectively introduce ions in the plasma into the substrate S placed on the susceptor 22. Further, a gate valve (not shown) is provided on the side wall 2a of the main body container 2. The gate valve has an opening and closing function to maintain the airtightness of the processing chamber 5 in a closed state, and the substrate S can be transferred between the processing chamber 5 and the outside in an open state. An exhaust device 31 is further provided outside the body container 2. The exhaust unit 31 is connected to the treatment chamber 5 via an exhaust pipe 32 connected to the bottom of the body container 2. When the substrate S is subjected to plasma treatment, the exhaust unit 31 discharges the gas in the processing chamber 5 to maintain the inside of the processing chamber 5 in a vacuum or a reduced pressure environment. A protective plate 41 substantially parallel to the inner wall surface is provided at a position spaced apart from each of the inner wall surfaces of the four side walls 2a (the left and right sides of FIG. 1 and the front side and the rear side (not shown)) of the main body container 2 constituting the processing chamber 5. . The 1st - 13th to 201137969 function of the protective plate 41 is the inner wall surface of the self-plasma protection body container 2. Further, the second function of the protective plate 4 1 is to enable temperature adjustment (e.g., heating) instead of the inner wall surface of the main body container 2, and to prevent the reaction product from accumulating in the processing chamber 5. For this purpose, a heat medium flow path 43 is provided inside the protective plate 41 so that the heat medium can flow therethrough. Further, between the protective plate 41 and the side wall 2a of the main body container 2, the heat insulating member 42 is provided in close contact with the inner wall surface of the protective plate 41 and the side wall 2a. As described above, in the plasma processing apparatus, it is necessary to adjust the temperature of the main body container 2 or the protective plate for the purpose of preventing adhesion of the reaction product or the like. As the temperature adjustment mechanism, a configuration in which the heat medium flow path is provided in the wall of the main body container 2, because of the large heat capacity or heat release of the main body container 2, there is a problem that temperature adjustment is difficult, the temperature adjustment device is enlarged, or because the main body container 2 The temperature distribution will cause problems with thermal strain. When the protective plate provided with the heat medium flow path is placed in close contact with the inner wall surface of the body container 2, the same problem as described above occurs. Further, when the protective plate provided with the heat medium flow path is disposed at a distance from the inner side of the wall surface of the main body container 2, a reaction of plasma treatment is formed in the gap between the wall surface of the main body container 2 and the member. The problem that the object or the vacuuming time becomes long, or the problem that abnormal discharge occurs between the wall surface of the main body container 2 and the member occurs. Thus, in the present embodiment, the heat medium flow path 43 is provided in the protective plate 41, Further, between the inner wall surface of the main body container 2 and the protective plate 41, the heat insulating member 42 that blocks or suppresses heat conduction between the two is placed in close contact with each other. As shown in Fig. 2 in which the portion A of Fig. 1 is enlarged, the heat medium flow path 43 is formed inside the protective plate 41, and the introduction portion 43a and the discharge portion 43b are provided at one end and the other end of the heat medium flow path 43. Then, the introduction portion 43a is connected to the main body container 2 and the introduction tube 44' of the heat insulating member 42. The discharge portion 43b is connected to the discharge tube 45 that penetrates the main body container 2 and the heat insulating member 42. The piping is connected to the cooling unit 50 provided outside the main body container 2. The cooling unit 50 is, for example, a heat exchanger or a circulation pump (not shown). The introduction pipe 44, the discharge pipe 45, and the cooling unit 50 constitute a temperature adjustment means. The shape of the protective plate 41 is arbitrary, but may be a substantially uniform rectangular shape covering the inner surface of each side wall 2a of the main body container 2 forming the processing chamber 5. In order to easily provide the protective plate 41, a space may be provided between the dielectric wall 6 and the upper end of the protective plate 41. Further, when the body container 2 forming the processing chamber 5 is formed into a cylindrical shape, it may have a cylindrical shape having a smaller diameter than the main body container 2 or a cylindrical shape divided into an arbitrary number. In addition, when the side wall 2a of the main body container 2 is provided with a gate mechanism or a transport mechanism for the substrate S, and a window for confirming the state of the plasma treatment, the shape of the portion is avoided, and the side wall 2a is not necessarily covered. comprehensive. Further, the protective plate 41 is resistant to the processing gas or the plasma, can withstand the reaching temperature (e.g., 120 to 150 ° C) in the body container 2, and can be formed of a material capable of forming the strength of the heat medium flow path 43. The protective plate 4 1 can be, for example, a stainless steel or a metal material such as aluminum or aluminum alloy similar to the main body container 2. When the material of the protective plate 41 is aluminum, it is preferable to apply an alumite treatment (anodizing treatment) so that no contaminants are generated from the surface of the protective plate 41. The heat insulating member 42 is a plate material having a shape between the protective plate 41 and the inner surface of the side wall 2a of the main body container 2, and has a substantially rectangular shape in substantially the same area as the protective plate 41. Further, when the body -15-201137969 2 forming the processing chamber 5 has a cylindrical shape, the outer diameter thereof may be substantially equal to the inner diameter of the body container 2, and the inner diameter thereof is substantially equal to the outer diameter of the protective plate 41. The cylindrical shape, or the cylinder is divided into an arbitrary number of curved shapes. The heat insulating member 42 is resistant to the temperature of arrival in the body container 2 and can be formed of a material having a small heat conductivity. For example, when the reaching temperature in the body container 2 is 120 to 150 ° C, fluororesin (PTFE) or polyimine, polyamidimide, polyphenylene sulfide (PPS), polyether can be used. Resin materials such as enamel (PFS), polyfluorene (PSF), epoxy resin glass, fluororubber (FKM), ruthenium rubber (Q), fluororubber rubber (FVMQ), perfluoropolyether rubber (FO), acrylic acid Rubber materials such as rubber (ACM) and ethylene propylene rubber (EPM). Further, the protective plate 41 and the heat insulating member 42 are fixed to the main body container 2 by a fixing member 46. In the present embodiment, for example, a metal screw is used as the fixing member 46, whereby the protective plate 41 is electrically connected to the main body container 2. Further, the fixing structure of the protective plate 41 and the heat insulating member 42 is not limited to screw fixing, and the end portion of the protective plate 41 may be locked to a projection or the like provided on the inner wall of the main body container 2, thereby fixing the protective plate 4 1 and the heat insulating member 42, or the introduction pipe 44 connected to the introduction portion 43a of the protection plate 41 or the discharge pipe 45 connected to the discharge portion 43b is fixed to the body container 2, thereby fixing the protective plate 41 and the heat insulating member 42. The heat medium circulates between the protective plate 4 1 and the cooling unit 5 作为 as a heat medium circulating device provided outside the device by the action of a circulation pump (not shown) to raise or cool the protective plate 41. In addition, a temperature detecting unit such as a thermocouple (not shown) may be provided in the main body container 2, and the temperature of the heat medium may be adjusted via a temperature controller (not shown) according to the detection 値-16-201137969, and the protective plate may be controlled. 4 1 outer surface temperature. Next, a description will be given of a processing operation when the substrate S is subjected to plasma treatment by the inductively coupled plasma processing apparatus 1 configured as described above. First, in a state where a gate valve (not shown) is opened, the substrate S is carried into the processing chamber 5 by a transport mechanism (not shown), and placed on the mounting surface 22A of the susceptor 22, and then electrostatic chuck or the like is used. The substrate S is fixed to the susceptor 22. Next, the processing gas is supplied from the gas supply device 20 to the processing chamber 5 via the gas supply pipe 21 and the plurality of gas discharge ports 16, and the processing chamber 5 is passed through the exhaust pipe 3 2 through the exhaust device 31. Vacuum evacuation is performed therein, thereby maintaining the processing chamber at, for example, 1. 3 3 Pa pressure environment. Secondly, from the high frequency power supply 15 will be 13. A high frequency of 56 MHz is supplied to the antenna 13, whereby a uniform induced electric field is formed in the processing chamber 5 via the dielectric wall 6. The processing gas is plasma-formed in the processing chamber 5 by the induced electric field thus formed, thereby generating a high-density inductively coupled plasma. The ions in the plasma thus generated are effectively introduced into the substrate S by a bias electric field, and a uniform plasma treatment is performed on the substrate S, which is biased from the high frequency power source 29 The generator of high frequency power supplied by the seat 22. At the time of the plasma treatment, the heat medium to the heat medium flow path 43' is introduced from the cooling unit 50 provided outside via the introduction pipe 44 and the introduction portion 43a of the protective plate 41. The discharge portion 43b and the discharge pipe through the protective plate 41. 45 to discharge the heat medium 'circulates to the cooling unit 50. During the circulation of the heat medium, the inside of the body container 2 is controlled to a predetermined temperature. When the substrate S is plasma-etched by the inductively coupled plasma processing apparatus 1, the heat medium is usually used for the purpose of heating the protective plate 41 in order to prevent the reaction product from adhering to the protective plate -17-201137969. At this time, the heat of the protective plate 41 is hardly transmitted to the main body container 2 due to the presence of the heat insulating member 42. As described above, the heat medium flow is disposed inside the side wall 2a of the main body container 2 forming the processing chamber 5. The protective plate 411 of the road 43 is immersed between the side wall 2a of the main body container 2 and the protective plate 41 by the heat insulating member 42. Thereby, the main body container 2 and the protective plate 41 can be thermally separated. Therefore, it is possible to suppress the influence of the main body container 2 which has a large heat capacity and which is easy to radiate, perform high-precision temperature control, and realize downsizing of the temperature adjustment device. Further, the heat transfer member 42 suppresses the heat transfer from the protective plate 41 to the side wall 2a' of the main body container 2, whereby the temperature distribution in the main body container 2 can be prevented from occurring and thermal strain is generated. Further, the heat insulating member 42 is brought into close contact with the side wall 2a of the main body container 2 and the protective plate 41, whereby a space is not formed between the inner surface of the side wall 2a and the protective plate 41. Therefore, there is no case where the plasma-treated reaction product is deposited between the inner surface of the side wall 2a and the protective plate 41. Further, it is possible to suppress the space for vacuuming due to the space between the inner surface of the side wall 2a and the protective plate 41, or to cause abnormal discharge between the side wall 2a of the main body container 2 and the protective plate 41. Further, in the present embodiment, in place of the side wall 2a of the main body container 2, the protective plate 41 functions as an anode electrode for biasing an electric field which is supplied from the high frequency power source 29 to the susceptor 22. The formation of high frequency power. In the present embodiment, the conduction between the protective plate 4 1 and the side wall 2a of the main body container 2 is ensured by the conductive fixing member 46, whereby the function as the anode electrode of the protective plate 41 is not impaired. As a result, there is no possibility of hindering the formation of a returning electric field from the susceptor 22 to the protective plate 41, the side wall 2a and the bottom wall 2b (the body container 2) or even the integrator 18 - 201137969 2 8 The bias electric field is stabilized and the stability of the plasma generated in the processing chamber 5 can be improved. Second, the modification of the present invention is different from the inductively coupled plasma processing apparatus 1 shown in FIG. The configuration will be described as a center, and the description of the same configuration as that of Fig. 1 will be omitted. [First Modification] Fig. 3 is a cross-sectional view showing a first modification of the portion corresponding to the portion A in Fig. 1 . In the structure of FIGS. 1 and 2, since a part (upper portion or side portion) of the heat insulating member 42 is exposed, in the plasma processing, the exposed portion of the heat insulating member 42 is exposed to the plasma, and there is fear of heat insulation. The member 42 is cut, or deteriorated. Then, in the first modification, as shown in FIG. 3, a shielding member 47 that covers at least the exposed portion of the heat insulating member 42 is disposed at the upper end of the heat insulating member 4 2 . The shielding member 47 may have a shape that covers at least a part of the exposed portion of the heat insulating member 42, and may cover only the upper portion of the heat insulating member 42. And, as shown in FIG. 4 as viewed from the arrow direction of FIG. 3, when the protective plate 41 is smaller than the inner surface of the side wall 2a of the main body container 2, it may cover the protective plate 41 and the heat insulating member 42. The shape of the upper and side. Further, when the inner surface of the bottom wall 2b of the main body container 2 and the bottom surface of the protective plate 41 are not in close contact with each other, there is fear that the plasma invades from the gap, and therefore the shape in which the bottom of the heat insulating member 42 is also covered . The shielding member 47 may be integrally formed with the protective plate 41 or formed as another member, or fixed by welding or the like, or detachably fixed by screwing or fitting, etc., and the thickness thereof is not particularly limited - 19- 201137969. Further, the shielding member 47 can be formed using a material having a function of blocking plasma, and for example, the same material as that of the protective plate 41 (a metal material such as stainless steel or ruthenium or aluminum alloy) can be used. When aluminum is used as the material of the shielding member 47, it is preferable to apply an alumite treatment (anodizing treatment) so that no contaminant is generated from the surface of the shielding member 47. By protecting the exposed portion of the heat insulating member 42 with the shielding member 47 as described above, it is possible to reliably prevent the deterioration or deformation of the heat insulating member 42 due to the exposure of the plasma, and the reliability of the heat insulating performance can be improved. In addition, the heat insulating member 42 made of a resin material or a rubber material is not exposed in the processing chamber 5, and a gas which is an impurity or a dust which is a particle is not emitted from the heat insulating member 42. The reliability of the pulp treatment. Although the heat insulating member 42 is constituted by a single member in Figs. 2 to 4, a plurality of members may be combined to form. For example, as shown in Fig. 5, when the coating portion 42B of the slurry-resistant material covers the surface of the heat insulating core member 42A, it is not necessary to provide the shielding member 47 as in the first modification, and the configuration can be simplified. Even when the end portion of the heat insulating member 42 is exposed, deterioration or deformation of the heat insulating member 42 can be suppressed. "The release of gas or dust from the heat insulating member 42 can be suppressed, and the reliability can be improved. The coating portion 42B of the slurry-resistant material may be appropriately selected in accordance with the type of gas used for the plasma treatment. For example, a material having high chemical stability is, for example, a fluororesin (pTFE). [Second Modification] In the embodiment of the above-described embodiment of the invention, which is described in the above, the embodiment of the present invention is shown in FIG. 2, the lower portion of the protective plate 41 is brought into contact with the main body container 2, and FIG. 3 is even The upper portion of the protective plate 41 is also connected to the configuration of the body container 2 via the shielding member 47, allowing the electrical connection of the protective plate 41 to the body container 2. Then, a conductive fixing member 46 is further used to ensure electrical connection of the protective plate 41 to the body container 2 (side wall 2a). In order to electrically connect the susceptor 22 and the protective plate 41 as opposite electrodes in the inductively coupled plasma processing apparatus 1, the side wall 2a of the main body container 2 to be grounded is electrically connected to the protective plate 41, and the protective plate is passed through the protective plate. 41 is used for the purpose of normalizing the return circuit of the bias electric field. However, in order to suppress the occurrence of unnecessary plasma in the vicinity of the periphery of the susceptor 22, the protective plate 41 may be electrically floated. For example, when the heat insulating member 42 is made of a dielectric material, a capacitor can be formed between the protective plate 41 and the side wall 2a of the main body container 2 by forming the protective plate 41 into an electrically floating state. In order to form the protective plate 41 into an electrically floating state, it is necessary to form the body container 2 and the protective plate 41 into an electrically non-connected state. Then, in the second modification, the heat insulating member 42 is formed of an insulating material having a small electrical conductivity in addition to the heat insulating property, and as shown in FIG. 6, the lower portion of the protective plate 41 is separated from the main body container 2. The configuration of the bottom surface is configured. Further, as shown in Fig. 7, the heat insulating member 42 may be inserted between the lower portion of the protective plate 41 and the bottom surface of the main body container 2. Examples of the insulating material include fluororesin (PTFE), polyether oxime (PFS), polyamidoximine, and a rubber material. [Third Modification] When the protective plate 4 1 is electrically floated, the thickness of the heat insulating member 21 - 201137969 42 can be changed depending on the location, and the protective plate 41 and the side wall of the body container 2 can be formed. The capacitance per unit area of the capacitor between 2a varies depending on the place. For example, as shown in Fig. 8, the heat insulating member 42 is formed thin at a portion adjacent to the upper portion of the side wall 2a of the main body container 2, and the heat insulating member 42 is formed thick at a portion adjacent to the lower portion of the side wall 2a of the main body container 2. Thereby, the capacitance per unit area of the capacitor between the protective plate 41 and the side wall 2a of the main body container 2 can be made larger at the upper portion of the side wall 2a and smaller at the lower portion of the side wall 2a. As a result, the return current I of the bias electric field is a path (solid line) which is more likely to pass through the upper portion of the side wall 2a having a larger capacitance than the path (dashed line) of the lower portion of the side wall 2a where the capacitance per unit area of the capacitor is small. Therefore, occurrence of unnecessary plasma in the vicinity of the periphery of the susceptor 22 can be suppressed. [Fourth Modification] When the protective plate 4 1 is electrically floated, the dielectric constant of the heat insulating member 42 can be changed depending on the location, and the side wall 2 a formed on the protective plate 41 and the main body container 2 can be formed. The capacitance per unit area of the capacitor between them varies depending on the location. For example, in the example shown in Fig. 9, the portion adjacent to the upper portion of the side wall 2a of the main body container 2 is such that the dielectric constant of the heat insulating member 42 is relatively large, and is adjacent to the lower portion of the side wall 2a of the main body container 2. The dielectric constant of the heat insulating member 42 is relatively small, whereby the capacitance per unit area of the capacitor between the protective plate 41 and the side wall 2a of the body container 2 can be made large in the upper portion of the side wall 2a. Small is formed in the lower portion of the side wall 2a. As a result, the return current I of the bias electric field is more likely to pass through the upper side of the capacitance -22-201137969 the upper path of the wall 2a than the path of the lower side of the side wall 2a (dashed line) where the capacitance per unit area of the capacitor is small. (solid line), therefore, occurrence of unnecessary plasma in the vicinity of the periphery of the susceptor 2 2 can be suppressed. In order to change the dielectric constant of the heat insulating member 42 depending on the field, other materials which can adjust the dielectric constant may be mixed with a material such as a synthetic resin constituting the heat insulating member 42. Further, by changing the material of the heat insulating member 42 depending on the location, the capacitance per unit area of the capacitor formed between the protective plate 41 and the side wall 2a of the main body container 2 can be changed depending on the location. For example, as shown in FIG. 10, a portion adjacent to the upper portion of the side wall 2a of the main body container 2 is provided with a heat insulating member 42C having a large relative dielectric constant, and a portion adjacent to a lower portion of the side wall 2a of the main body container 2 is arranged in relativity. a heat insulating member 42D having a small dielectric constant, whereby the capacitance per unit area of the capacitor between the protective plate 41 and the side wall 2a of the body container 2 can be made larger at the upper portion of the side wall 2a, at the side wall 2a The lower part is formed small. As a result, the return current I of the bias electric field is more likely to pass through the path (solid line) of the upper portion of the side wall 2a having a larger capacitance than the path (dashed line) of the lower portion of the side wall 2a having a smaller capacitance per unit area of the capacitor. Therefore, occurrence of unnecessary plasma in the vicinity of the periphery of the susceptor 22 can be suppressed. In addition, in FIG. 10, only two types of heat insulating members 42C having a large dielectric constant and a heat insulating member 42D having a small dielectric constant are used, but they are not limited to two types, and three or more types of heat insulating may be used. member. For example, a heat insulating member having a medium dielectric constant may be provided between the heat insulating member having a large dielectric constant and the heat insulating member having a small dielectric constant. As shown in the second to fourth modifications described above, by disposing the protective plate 4 1 so as not to be electrically connected to the main body container 2, the heat insulating member 42 can be used not only as a heat insulating member but also as a dielectric member. -23-201137969 In addition, the member having high heat insulating properties is not limited to the high insulation property. Therefore, in the second to fourth modifications described above, the heat insulating sheet 42E and the insulating property may be overlapped as shown in FIG. The plate member 42F constitutes the heat insulating member 42. The insulating sheet 42F is, for example, a fluororesin (PTFE), a polyether mill (PFS), a polyamidimide, a rubber material or the like. In addition, the inductively coupled plasma processing apparatus 1 shown in FIG. 1 is required to pass between the upper electrode and the lower electrode (base) in a parallel plate type plasma processing apparatus as described in Patent Document 1, for example. Plasma to couple the capacitors. In this case, the protective plate can be electrically floated by the configuration shown in the second to fourth modifications, for the purpose of preventing the short circuit of the current flowing through the protective plate to the side wall of the processing container. The slurry is produced stably. The embodiments of the present invention have been described in detail above for the purpose of illustration, but the invention is not limited to the embodiments described above. The practitioner can make further changes without departing from the spirit and scope of the invention, and these are also included in the scope of the invention. For example, although the above embodiment is an example of the inductively coupled plasma processing apparatus 1, the present invention is also applicable to, for example, a parallel plate plasma processing apparatus, a surface wave electric power processing apparatus, and an ECR (electron Cyclotron Resonance) plasma processing apparatus. Other types of plasma processing apparatuses such as a spiral wave plasma processing apparatus. Further, the device necessary for temperature adjustment in the chamber is not limited to the dry etching device, and may be equally applied to a film forming device or an ashing device. Further, the above-described embodiment is a cooling structure for flowing a heat medium, and is a temperature adjusting means for the protective plate 41, but may be, for example, a structure of a heat-generating body of a heater such as a heater, or a combination thereof. structure. Further, the present invention is not limited to the case where the substrate for FPD is used as the object to be processed, for example, when the semiconductor wafer or the substrate for a solar cell is used as the object to be processed. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view schematically showing the configuration of an inductively coupled plasma processing apparatus according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing an enlarged portion A of Fig. 1; 3 is a cross-sectional view showing a state in which a shielding member is provided in a first modification. Fig. 4 is a view for explaining an arrangement state of the shielding member as seen from the direction of the arrow of Fig. 3; Fig. 5 is a cross-sectional view showing another configuration example of the heat insulating member. Fig. 6 is a cross-sectional view showing a mounted state of a heat insulating member according to a second modification. Fig. 7 is a cross-sectional view showing another configuration example of the heat insulating member. 8 is a cross-sectional view showing a state in which a heat insulating member according to a third modification is attached. FIG. 9 is a cross-sectional view showing a state in which a heat insulating member according to a fourth modification is attached. FIG. 1 is a view showing heat insulation in a fourth modification. A cross-sectional view of another configuration example of the member. Fig. 11 is a cross-sectional view showing another configuration example of the heat insulating member. -25- 201137969 [Explanation of main component symbols] 1 : Plasma processing device 2 : Main body container 5 : Processing chamber 6 : Dielectric wall 7 : Support frame 1 3 : Antenna 14 : Integrator 1 5 : Commercial frequency power supply 16 : Gas discharge port 20: gas supply device 2 1 : gas supply pipe 22 : susceptor 22A : mounting surface 24 : insulator frame 2 5 : struts 2 6 : bellows 28 : integrator 2 9 : commercial frequency power supply 3 1 : row Gas device 3 2 : Exhaust pipe 4 1 : Protective plate 4 2 : Heat insulating member 42A : Heat insulating core member 201137969 4 2 B : Covering portion 42C : Heat insulating member 42D having a large dielectric constant: Low dielectric constant Heat insulating member 4 2 E : heat insulating sheet 42F : insulating sheet 4 3 : heat medium passage 43 a : introduction portion 43 b : discharge portion 44 · introduction tube 4 5 : discharge tube 46 : fixing member 47 : shielding Member 50: Cooling unit-27-