TWI619053B - 觸控顯示裝置 - Google Patents

觸控顯示裝置 Download PDF

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TWI619053B
TWI619053B TW105130705A TW105130705A TWI619053B TW I619053 B TWI619053 B TW I619053B TW 105130705 A TW105130705 A TW 105130705A TW 105130705 A TW105130705 A TW 105130705A TW I619053 B TWI619053 B TW I619053B
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display device
thin film
touch display
film transistor
layer
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TW201741835A (zh
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林昌廷
賴寵文
江冠賢
萬昌峻
李國勝
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鴻海精密工業股份有限公司
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    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0414Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using force sensing means to determine a position
    • GPHYSICS
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
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    • G06COMPUTING; CALCULATING OR COUNTING
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    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
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    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0447Position sensing using the local deformation of sensor cells
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04105Pressure sensors for measuring the pressure or force exerted on the touch surface without providing the touch position
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    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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Abstract

一種觸控顯示裝置,包括:一襯底;一驅動結構,用於為發出顯示所需要的光提供驅動力,該驅動結構形成於該襯底表面;一壓力感測器,用於偵測觸控壓力,該壓力感測器包括第一電極層、一彈性層和一第二電極層,該第一電極層位於該驅動結構與該襯底之間或為該驅動結構的一部分,該彈性層設於該襯底遠離該第一電極層的表面,該第二電極層設於該彈性層遠離該襯底的表面。

Description

觸控顯示裝置
本發明涉及一種具觸控顯示裝置。
目前,觸控顯示裝置通常包括顯示面板及用於實現觸控功能的觸控結構。為了實現觸控顯示裝置更多的功能特徵,通常是在上述顯示面板上通過粘接等方式附加一壓力感測器來感測觸控力度。然而,上述附加壓力感測器不僅導致觸控顯示裝置組裝結構複雜,還難以降低整個觸控顯示裝置的厚度,難以符合現有顯示裝置日益輕薄化的發展趨勢。
鑒於以上內容,有必要提供一種能夠感測觸控力度且利於輕薄化的觸控顯示裝置。
一種觸控顯示裝置,包括:一襯底;一驅動結構,用於為發出顯示所需要的光提供驅動力,該驅動結構形成於該襯底表面;一壓力感測器,用於偵測觸控壓力,該壓力感測器包括第一電極層、一彈性層和一第二電極層,該第一電極層位於該驅動結構與該襯底之間或為該驅動結構的一部分,該彈性層設於該襯底遠離該第一電極層的表面,該第二電極層設於該彈性層遠離該襯底的表面。
相較於現有技術,上述觸控顯示裝置內整合有用於偵測觸控壓力的壓力感測器,而無需額外通過粘接等方式附加一壓力感測器,觸控顯示裝置有利於形成具有壓力感測功能的輕薄化的觸控顯示裝置。
10,20,30‧‧‧觸控顯示裝置
101‧‧‧蓋板
102‧‧‧偏光片
103‧‧‧覆蓋層
104‧‧‧封裝層
105‧‧‧犧牲層
106‧‧‧襯底
110‧‧‧發光單元
111‧‧‧陽極
112‧‧‧有機發光層
113‧‧‧陰極
120‧‧‧驅動結構
122‧‧‧閘極線
123‧‧‧資料線
124‧‧‧功率線
125‧‧‧薄膜電晶體單元
125a‧‧‧第一薄膜電晶體
125b‧‧‧第二薄膜電晶體
1252‧‧‧溝道層
G‧‧‧閘極
S‧‧‧源極
D‧‧‧汲極
1251‧‧‧緩衝層
1253‧‧‧閘極絕緣層
1254‧‧‧隔離層組
1255‧‧‧平坦層
126‧‧‧存儲電容
130,230,330‧‧‧壓力感測器
131,231,331‧‧‧第一導電層
1311‧‧‧連接線
132‧‧‧彈性層
133‧‧‧第二導電層
圖1是本發明第一較佳實施例的觸控顯示裝置的剖面示意圖。
圖2是圖1所示觸控顯示裝置中一個畫素的電路示意圖。
圖3是圖1所示觸控顯示裝置的第一電極層的平面結構示意圖。
圖4是本發明第二較佳實施例的觸控顯示裝置的剖面示意圖。
圖5是本發明第三較佳實施例的觸控顯示裝置的剖面示意圖。
下面結合附圖將對本發明實施方式作進一步的詳細說明。
請參閱圖1,圖1是本發明第一較佳實施例的觸控顯示裝置10的剖面示意圖。可以理解地,由於剖面角度受限,該剖面示意圖僅示出一畫素的部分剖面結構。該觸控顯示裝置10可為有機電致發光顯示裝置(organic light emitting display,OLED)或液晶顯示裝置(liquid crystal display,LCD)。本實施方式的觸控顯示裝置10為OLED,且該OLED整合了壓力感測功能於其中。
該觸控顯示裝置10,包括依次層疊設置的一蓋板101、一偏光片102、一覆蓋層103、一封裝層104、多個發光單元110、一驅動結構120、一第一導電層131、一犧牲層105、一襯底106、一彈性層132及一第二導電層133。在其他實施方式中,該第一導電層131的位置並不僅限於位於該犧牲層105與該驅動結構120之間,還可以設置於驅動結構120內。此外,用於保護該襯底106的該犧牲層105並非必需結構,可按實際需求選擇是否省去該結構。
該蓋板101蓋設於該偏光片102上,對整個該觸控顯示裝置10起保護作用,同時還可作為觸控操作介面。此外,還可在該蓋板101的內側表面形成用於實現觸控功能(例如觸控位置資訊)的觸控電極結構(圖未示)。當然,該觸控電極結構也可形成於一設於該蓋板101下方的基板(圖未示)上,該觸控電極結構例如可位於該蓋板101與該偏光片102之間,或該偏光片102與該覆蓋層103之間。
該蓋板101可使用薄膜、塑膠等透明材料製成。在本實施方式中,該觸控顯示裝置10可為柔性顯示面板,承載該發光單元110與該驅動結構120的襯底106為柔性基底。該襯底106可由聚醯亞胺(PI)或聚對苯二甲酸乙二醇酯(PET)等柔性材料製成。然而,該襯底106的材料不限於上述兩種材料。
該封裝層104用於對該發光單元110進行封裝,本實施方式的該觸控顯示裝置10採用薄膜封裝(thin film encapsulation,簡稱TFE)方式進行封裝。薄膜封裝是指在該多個發光單元110表面覆蓋由無機薄膜和有機薄膜組合的薄膜封裝層104,以使水氧難以滲入該多個發光單元110內部。本實施方式中,該封裝層104覆蓋於該發光單元110上方,其與設於該多個發光單元110下方的所述犧牲層105及一緩衝層1251共同將該多個發光單元110密封。該覆蓋層103覆蓋於該封裝層104上以保護該封裝層104及封裝在該封裝層104內的該發光單元110。
請一併參照圖2,圖2是圖1所示觸控顯示裝置10中一個畫素的電路示意圖。該多個發光單元110均電連接該驅動結構120,該驅動結構120提供顯示驅動信號至該多個發光單元110,從而使該多個發光單元110發射畫面顯示所需的光。每一該發光單元110至少包括陽極111、陰極113及夾於該陰極113與該陽極111之間的有機發光層112。該有機發光層112用於在該陽極111與該陰極113的驅動下發光。
該驅動結構120為一主動陣列結構,包括由多個薄膜電晶體(thin film transistor,TFT)單元125呈矩陣排列而成的薄膜電晶體陣列、多個存儲電容126、多條閘極線122、多條資料線123及一功率線124。該資料線123與該閘極線122垂直絕緣相交,從而定義多個呈矩陣排布的畫素(未標示)。每一該薄膜電晶體單元125包括第一薄膜電晶體125a、第二薄膜電晶體125b。
每一畫素對應一個存儲電容126、一個發光單元110及一個薄膜電晶體單元125。其中,該第一薄膜電晶體125a的閘極連接該閘極線122,該第一薄膜電晶體125a的源極連接該資料線123,該第一薄膜電晶體125a的汲極經由該存儲電容126連接該功率線124。該第二薄膜電晶體125b的閘極連接該第一薄膜電晶體125a的汲極,該第二薄膜電晶體125b的汲極連接該發光單元110的陽極111,該第二薄膜電晶體125b的源極連接該功率線124。具體而言,該第一薄膜電晶體125a作為開關TFT,該第二薄膜電晶體125b作為驅動TFT。
更進一步地,當該閘極線122上載入掃描信號時,該第一薄膜電晶體125a開啟,此時資料線123上的灰度信號傳輸至該第二薄膜電晶體125b的閘極,當該第一薄膜電晶體125a關閉後,還可通過該存儲電容126使此電位保持,從而使得該第二薄膜電晶體125b的閘極電壓保持在使得該第二薄膜電晶體125b進入恒流區的電壓,以控制該第二薄膜電晶體125b的輸出電流,並進一步使通過該發光單元110的電流保持恒定。該功率線124用於提供偏壓,以控制該發光單元110的光強。
該驅動結構120還包括該緩衝層1251、閘極絕緣層1253、隔離層組1254及平坦層1255。該第一薄膜電晶體125a及該第二薄膜電晶體125b分別包括一溝道層,該第二薄膜電晶體125b的溝道層1252如圖1所示。該第一薄膜電晶體125a的結構與該第二薄膜電晶體125b類似,此處以該第二薄膜電晶體125b為例進行說明,圖1僅呈現了第二薄膜電晶體125b的剖面結構示意圖。
其中,該緩衝層1251設置於該襯底106上,該溝道層1252設置於該緩衝層1251上,該閘極絕緣層1253設置於該溝道層1252與閘極G之間。該第二薄膜電晶體125b的閘極G設置於該閘極絕緣層1253上,該隔離層組1254設置於該閘極G及該閘極絕緣層1253上,該第二薄膜電晶體125b的源極S及該第二薄膜電晶體125b的汲極D設置於隔離層組1254上且分別通過該隔離層組1254中的導通孔(未標示)與該溝道層1252連接。該平坦層1255設置於該源極S、汲極D及該隔離層組1254上,該陽極111設置於該平坦層1255上且通過該平坦層1255中的導通孔連接至該汲極D。該有機發光層112及該陰極113依序設置於該陽極111上。這些結構與現有技術中相同,此處不再贅述。
需要說明的是,本實施方式所描述的該第一薄膜電晶體125a及該第二薄膜電晶體125b為頂柵型結構,在其他實施方式中,該第一薄膜電晶體125a及該第二薄膜電晶體125b也可採用底柵型結構,並不以此為限。另外,該有機發光層112可以包括電洞傳輸層、有機層、及電子傳輸層(均圖未示)等。該發光單元110發出的光線經由該蓋板101提供給面板觀看者。
該第一導電層131、該彈性層132及該第二導電層133共同形成一壓力感測器130。該壓力感測器130用於感測作用於該觸控顯示裝置10的觸控按壓力度的大小。該彈性層132形成於該第一導電層131與該第二導電層133之間。在本實施例中,該彈性層132形成於該襯底106遠離該第一導電層131的表面,該第二導電層133形成該於彈性層132遠離該襯底106的一側,從而形成該彈性層132位於該第一導電層131與該第二導電層133之間的結構。該彈性層132由能在壓力的情況下發生形變從而改變受壓位置的厚度的材料形成。該彈性層132可選擇例如泡棉、墊片、緩衝墊、膠帶、橡膠片、彈簧中的其中之一或二者的組合。例如,該彈性層132可由泡棉材料及間隔嵌設於泡棉材料內的多個彈簧形成。
該壓力感測器130可為一電容式壓力感測器130,當使用者對該觸控顯示裝置10進行觸控按壓動作時,該彈性層132因觸控按壓力而發生形變,同時,該第一導電層131及該第二導電層133之間的間距隨之發生變化,從而引起該第一導電層131及該第二導電層133之間的電容值發生改變。根據該第一導電層131及該第二導電層133之間的電容值的變化量即可計算出作用於該觸控顯示裝置10上的觸控操作產生的按壓力。
其中,該第一導電層131形成於該襯底106上,且位於該犧牲層105與該緩衝層1251之間。可以理解,本實施方式中的該第一導電層131與所述犧牲層105及所述緩衝層1251共同形成該發光單元110下方的封裝結構以將該發光單元110封裝,此時,該第一導電層131的存在可起到加強封裝結構的作用。此外,該第一導電層131進一步作為一遮光層以防止外界光線及水氣進入該驅動結構120及該發光單元110。在其它實施方式中,該第一導電層131也可以不參與封裝該發光單元110。
進一步地,請參照圖3,圖3是圖1所示觸控顯示裝置10的第一導電層131的一實施方式的平面結構示意圖。該第一導電層131可通過連接線1311連接至一電路板(例如一軟性電路板)(圖未示),以便將該壓力感測器130偵測到的壓力信號輸出至一外部電路(圖未示)進行運算。該第一導電層131包括多個呈矩陣排列的電極單元131a,每一所述電極單元131a通過一所述連接線1311連接至所述軟性電路板。本實施方式中,呈矩陣排列的該多個電極單元131a可以代替上述觸控電極結構,以偵測觸控位置,觸控位置信息同樣通過該連接線1311傳輸至所述外部電路。其中,該第一導電層131實現壓力感測的功能及實現觸控位置感測的功能可分時驅動的方式進行。該觸控顯示裝置10的觸控位置感測的功能集成於該壓力感測器130的第一導電層131上,從而無需額外設置所述 觸控電極結構,可有利於形成具有壓力感測功能的集成化及輕薄化的觸控顯示裝置10。
在其他實施方式中(未圖示),該第一導電層131為一整片結構,而並未被分割成上述多個電極單元131a,該第一導電層131也與該彈性層132及該第二導電層133共同形成可偵測觸控操作產生的按壓力的壓力感測器,然而,此時的該第一導電層131不能代替所述觸控電極結構直接偵測觸控位置。本實施方式中,該壓力感測器130所連接的軟性電路板可與用於傳輸顯示信號的軟性電路板為同一軟性電路板,從而無需專門為該壓力感測器130增設軟性電路板,或是分開設置軟性電路板。且,因該壓力感測器130與用於傳輸顯示信號的線路連接至同一軟性電路板,可降低後續綁定製程的複雜性。
本實施方式中,在與每一該第一薄膜電晶體125a的電子通道對應的位置及與每一該第二薄膜電晶體125b的電子通道對應的位置均未設置該電極單元131a,也就是說對應該第一薄膜電晶體125a的電子通道及該第二薄膜電晶體125b的電子通道對應的該第一導電層131被去除。如此,可避免在進行觸控壓力感測時該電極單元131a對該第一薄膜電晶體125a及該第二薄膜電晶體125b造成干擾而影響該發光單元110的發光亮度。
該第一薄膜電晶體125a為N型薄膜電晶體或其他非P型薄膜電晶體。需要說明的是,若該第一薄膜電晶體125a為P型薄膜電晶體,在進行觸控壓力感測時所施加的電壓為正電壓,則對應該第一薄膜電晶體125a的電子通道的位置可根據實際情況任意選擇設置或不設置該電極單元131a,然而,不管該第二薄膜電晶體125b為哪種類型,對應該第二薄膜電晶體125b的電子通道的位置均不設置該電極單元131a。
可以理解,位於該第一薄膜電晶體125a的源極與汲極之間的溝道層為該第一薄膜電晶體125a的電子通道。位於該第二薄膜電晶體125b的源極與汲 極之間的溝道層1252為該第二薄膜電晶體125b的電子通道。源極處的電子經該電子通道流至對應的汲極,從而使源、汲極電導通。
該多個電極單元131a例如可通過圖案化一導電材料層而形成,該導電材料例如為但不限於鉬、鈦、鋁、鎢或其組合中的一種。該第二導電層133為但不限於銅、銀、鉬、鈦、鋁、鎢、氧化銦錫或其組合中的一種。
本實施方式中,該第二導電層133為一片材結構,當然,在變更實施方式中(未圖示),該第二導電層133也可設置成多個間隔設置的導電層單元,每一導電層單元對應一所述電極單元131a。
圖4是本發明第二較佳實施例的觸控顯示裝置20的剖面示意圖。本實施方式中與上述第一實施方式相同的元件,沿用第一實施方式的元件符號。本實施例的觸控顯示裝置20與上述第一實施例的觸控顯示裝置10基本相同,區別在於,本實施方式以該第一薄膜電晶體125a及該第二薄膜電晶體125b的閘極作為第一導電層231,第一薄膜電晶體125a及該第二薄膜電晶體125b的閘極所形成的該第一導電層231與該彈性層132、該第二導電層133共同形成壓力感測器230,從而無需額外設置如第一實施例所述的第一導電層131。該第一薄膜電晶體125a的閘極及該第二薄膜電晶體125b的閘極G為在同一道光罩中同時成型。其中,該第一導電層231實現所述驅動結構120的驅動功能及所述壓力感測230的壓力感測功能通過分時驅動的方式進行。該觸控顯示裝置20將驅動結構的閘極同時應用為壓力感測器230的第一導電層231,從而有利於形成具有壓力感測功能的集成化及輕薄化的觸控顯示裝置20。
可以理解,作為該第一導電層231的該第一薄膜電晶體125a的閘極及該第二薄膜電晶體125b的閘極G,可以分別由額外增設的導線(未圖示)連接至外部電路,以將偵測到的壓力信號輸出至外部電路進行運算。此外,該第一薄膜電晶體125a的閘極及該第二薄膜電晶體125b的閘極G可以根據具體感測精度 的需要,只選部分或是全部作為第一導電層231。其中,可以僅以該第一薄膜電晶體125a的閘極或該第二薄膜電晶體125b的閘極G作為該第一導電層231,也可以同時以部分該第一薄膜電晶體125a的閘極及部分該第二薄膜電晶體125b的閘極G作為該第一導電層231。
可變更地,可根據該襯底106的佈線空間,在形成該第一薄膜電晶體125a的閘極及該第二薄膜電晶體125b的閘極G的時候,一併定義好該第一導電層231。具體而言,在對一第一金屬層(未圖示)進行黃光顯影、蝕刻以形成該第一薄膜電晶體125a的閘極及該第二薄膜電晶體125b的閘極G時,若該襯底106上有多餘的佈線空間,則該第一金屬層可在多餘的佈線空間上保留部分而無需蝕刻完全,從而該第一金屬層所定義的第一薄膜電晶體125a的閘極、該第二薄膜電晶體125b的閘極G及上述多餘的佈線空間上的保留的部分第一金屬層一併作為該第一導電層231。
圖5是本發明第三較佳實施例的觸控顯示裝置30的剖面示意圖。本實施例的觸控顯示裝置30與上述第二實施例的觸控顯示裝置20基本相同,區別在於,本實施方式以該第一薄膜電晶體125a及該第二薄膜電晶體125b的源極、汲極作為第一導電層331,該第一薄膜電晶體125a及該第二薄膜電晶體125b的源極、汲極所形成的該第一導電層331與該彈性層132、該第二導電層133共同形成壓力感測器330。該第一薄膜電晶體125a的源極、汲極及該第二薄膜電晶體125b的源極S、汲極D為在同一道光罩中同時成型。該第一導電層331實現所述驅動結構120的驅動功能及所述壓力感測330的壓力感測功能通過分時驅動的方式進行。該觸控顯示裝置30將驅動結構的源/汲極同時應用為壓力感測器330的第一導電層331,從而有利於形成具有壓力感測功能的集成化及輕薄化的觸控顯示裝置30。
在本實施方式中,該第一薄膜電晶體125a的源極、汲極均與該第一薄膜電晶體125a的閘極錯開設置,即,該第一薄膜電晶體125a的源極、汲極與該第一薄膜電晶體125a的閘極在所述襯底106上的投影沒有交疊。並且,該第二薄膜電晶體125b的源極S、汲極D均與該第二薄膜電晶體125b的閘極G錯開設置。如此,當該第一薄膜電晶體125a的源極、汲極與該第二薄膜電晶體125b的源極S、汲極D作為所述壓力感測器330的第一導電層331時,不會輕易受該第一薄膜電晶體125a的閘極或該第二薄膜電晶體125b的閘極的影響。
可以理解,作為該第一導電層331的該第一薄膜電晶體125a的源極、汲極與該第二薄膜電晶體125b的源極S、汲極D,可以分別由額外增設的導線(未圖示)連接至外部電路,以將偵測到的壓力信號輸出至外部電路進行運算。此外,該第一薄膜電晶體125a的源極、汲極與該第二薄膜電晶體125b的源極S、汲極D可以根據具體感測精度的需要,只選部分或是全部都作為第一導電層331。其中,可以僅以該第一薄膜電晶體125a的源極、汲極或該第二薄膜電晶體125b的源極S、汲極D作為該第一導電層331,也可以同時以部分該第一薄膜電晶體125a的源極、汲極與該第二薄膜電晶體125b的源極S、汲極D作為該第一導電層331。
可變更地,可根據該襯底106的佈線空間,在形成該第一薄膜電晶體125a的源極、汲極與該第二薄膜電晶體125b的源極S、汲極D的時候,一併定義好該第一導電層331。具體而言,在對一第二金屬層(未圖示)進行黃光顯影、蝕刻以形成該第一薄膜電晶體125a的源極、汲極與該第二薄膜電晶體125b的源極S、汲極D時,若該襯底106上有多餘的佈線空間,則該第二金屬層可在多餘的佈線空間上保留部分而無需蝕刻完全,從而該第二金屬層所定義的該第一薄膜電晶體125a的源極/汲極、該第二薄膜電晶體125b的源極S/汲極D及上述多餘的佈線空間上的保留的部分第二金屬層一併作為該第一導電層331。
上述各實施方式以該觸控顯示裝置10為OLED為例說明,以下對該觸控顯示裝置10為液晶顯示裝置情形作簡單說明(未圖示),該觸控顯示裝置包括第一襯底、第二襯底及位於該第一襯底與第二襯底之間的液晶層。具體而言,該第一襯底面向該第二襯底的表面形成有驅動結構,該驅動結構為TFT陣列,該第二襯底為對向基板(例如為彩色濾光基板)。其中,該壓力感測器的第一導電層位於該第一襯底面向該第二襯底的一側,該壓力感測器的彈性體位於該第一襯底遠離該第二襯底的表面,該第二導電層設於該彈性體遠離該第一襯底的表面。在一實施方式中,該第一導電層位於該TFT陣列與該第一襯底之間。在變更實施方式中,該TFT陣列的至少部分閘極或至少部分源/汲極作為該第一導電層。
綜上所述,本創作符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本創作之較佳實施例,本創作之範圍並不以上述實施例為限,舉凡熟習本案技藝之人士爰依本創作之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。

Claims (10)

  1. 一種觸控顯示裝置,其改良在於,包括:一襯底;一驅動結構,用於為發出顯示所需要的光提供驅動力,該驅動結構形成於該襯底表面;一壓力感測器,用於偵測觸控壓力,該壓力感測器包括第一電極層、一彈性層和一第二電極層,該第一電極層位於該驅動結構與該襯底之間或為該驅動結構的一部分,該彈性層設於該襯底遠離該第一電極層的表面,該第二電極層設於該彈性層遠離該襯底的表面。
  2. 如請求項1所述的觸控顯示裝置,其中,該第一電極層包括多個呈矩陣排列的電極單元,每一電極單元通過一連接線電連接至外部電路,該驅動結構包括多個呈矩陣排列的薄膜電晶體。
  3. 如請求項2所述的觸控顯示裝置,其中,至少部分所述薄膜電晶體的閘極形成的所述第一電極層。
  4. 如請求項2所述的觸控顯示裝置,其中,至少部分所述薄膜電晶體的源極及汲極形成的所述第一電極層。
  5. 如請求項3或4任一項所述的觸控顯示裝置,其中,該多個電極單元分時進行壓力感測或驅動功能。
  6. 如請求項4所述的觸控顯示裝置,其中,每一薄膜電晶體的源極及汲極與對應的閘極在所述襯底上的投影沒有交疊。
  7. 如請求項2所述的觸控顯示裝置,其中,每一薄膜電晶體的源極與汲極之間對應的區域未設置有所述電極單元。
  8. 如請求項1所述的觸控顯示裝置,其中,該觸控顯示裝置為柔性有機電致發光顯示裝置,且包括多個發光單元,該多個發光單元位於該驅動結 構遠離該襯底的一側,該多個發光單元由該驅動結構驅動發出所述觸控顯示裝置實現畫面顯示所需的光。
  9. 如請求項1所述的觸控顯示裝置,其中,該第一電極層位於該驅動結構與該襯底之間,且該第一電極層包括多個呈矩陣排列的電極單元,該多個電極單元分別通過一連接線電連接至外部電路,從而可偵測作用於該觸控顯示裝置的觸控位置。
  10. 如請求項1所述的觸控顯示裝置,其中,該觸控顯示裝置為液晶顯示裝置。
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