TWI613506B - How to make the mask - Google Patents

Abstract

The invention provides a method for manufacturing a photomask. The steps include forming a surface of a polymer polymer substrate, forming a plurality of convex and concave structures on the surface by using a mold kernel, and then coating the surface of the polymer polymer substrate with a light-shielding device. Layer and a photoresist layer, and then irradiate the photoresist layer with ultraviolet light for exposure. Because the UV energy of the convex structure is higher than that of the concave structure, only the photoresist layer on the convex structure can be removed through development and the concave portion can be retained. The photoresist layer of the structure is finally washed away by the etching solution covering the convex structure. The manufacturing method of the photomask of the present invention can be reused after coating, exposing, and developing the photoresist layer, and it is no longer necessary to copy the polymer polymer substrate (sub-mold) through the mold core and the production of the light-shielding layer, which greatly reduces Time, procedure and cost of making the mask.

Description

How to make photomasks

The invention relates to a manufacturing method of a photomask, which uses a photoresist layer defined by different amounts of ultraviolet light absorption as protection of a light shielding layer of the photomask.

For example, Taiwan patent I450029 has a metal embedded photomask and its manufacturing method, which has the step of thermal transfer. During the heating process, the substrate (sub mold) and the transfer substrate (such as PET film, PC film, PVA film ... And other polymer substrates) the surface layer is not uniformly heated, resulting in that the pre-removed light-shielding layer cannot be completely removed, thereby causing fixed defects in the exposure of the photomask. In addition, in the thermal transfer process, the cold and heat interactive transfer process will cause the metal in the recessed portion to shrink or deform, and a large-area metal shading layer peeling problem will occur.

In addition, the service life of the photomask depends on the contamination of the surface of the exposed substrate during the exposure process and the damage caused by repeated use after repeated use. In the conventional technology, when the photomask is contaminated or damaged, a new photomask must be made again, which takes time and labor, and increases the cost of production.

In view of the shortcomings derived from the above-mentioned conventional methods, the inventor of the present case was eager to improve and innovate. After years of painstaking research, he finally successfully developed a How to make a photomask.

The present invention provides a method for manufacturing a photomask, the steps of which are as follows: a plurality of convex and concave structures are formed on the surface by a mold kernel on a surface of a polymer polymer substrate, wherein the mold kernel is a silicon wafer mold kernel; Quartz substrate mold or nickel substrate mold; the surface of the polymer substrate is coated with a light-shielding layer, which is one or both of aluminum, gold, titanium, nickel, silver, copper, and alumina The above combined metal layer; a photoresist layer is coated on the light-shielding layer, and the photoresist layer is a positive photoresist; the photoresist layer is irradiated with ultraviolet light (UV) for exposure, due to the difference in the energy intensity of the convex and concave structures, As a result, the convex structure has higher energy than the concave structure, and the photoresist layer of the convex structure is completely removed through development. The concave structure can retain part of the photoresist layer. The photoresist layer is used to protect the light shielding layer of the concave structure; And the light-shielding layer covering the convex structure is removed by an etching solution.

The present invention provides another method for manufacturing a photomask. The steps are as follows: a plurality of convex and concave structures are formed on the surface of a polymer polymer substrate by a mold kernel, wherein the mold kernel is a silicon wafer mold. Coat the surface of the polymer substrate with a light-shielding layer, which is a metal layer containing one or more of aluminum, gold, titanium, nickel, silver, copper, and alumina; A photoresist layer is coated on the layer. The photoresist layer is a positive photoresist and completely covers the structure of each convex portion and the concave portion. The photoresist layer is irradiated with ultraviolet light for exposure. Since ultraviolet rays irradiate the structure of the convex portion and the concave portion, the energy is strong. The difference in degree causes the convex structure to receive higher energy than the concave structure. The photoresist layer of the convex structure is completely removed through development, and the concave structure can retain part of the photoresist layer. The photoresist layer is used for protection. The light-shielding layer of the concave structure; and the light-shielding layer covering the convex structure is washed away with an etchant.

The present invention provides still another manufacturing method of the photomask. The steps are as follows: a plurality of convex and concave structures are formed on the surface of a polymer polymer substrate by a mold kernel, wherein the mold kernel is a silicon wafer mold; Core, quartz substrate core or nickel substrate core; the surface of the polymer substrate is coated with a light-shielding layer, which is one or two of aluminum, gold, titanium, nickel, silver, copper, and aluminum oxide A combination of the above metal layers; a photoresist layer is coated on the light-shielding layer, and the photoresist layer is a negative photoresist; the photoresist layer is irradiated with ultraviolet light (UV) for exposure. The difference causes the energy of the convex structure to be higher than that of the concave structure. The photoresist layer of the convex structure is completely retained through development, and the photoresist layer of the concave structure is removed. The photoresist layer is used to protect the light shielding of the convex structure. Layer; and the light-shielding layer covering the recessed structure is washed away with an etchant.

Among them, the negative photoresist layer has better adhesion and higher hardness than the positive photoresist layer, so it can completely protect the light shielding layer and prevent the light shielding layer from falling out due to pressing and contact.

Wherein, the height of the overlap of the photoresist layer and the light-shielding layer after being washed away by the etching solution is less than or equal to the height of each convex structure protruding from the surface.

Among them, it is further applied by vapor deposition, sputtering or spin coating. A light-shielding layer is applied to a polymer substrate.

The polymer polymer substrate is a flexible substrate, and the polymer polymer substrate is one or more of polyurethane acrylate, polyvinyl alcohol, ultraviolet curing resin, and polydimethyloxane. Of combination.

The ratio of the height of each convex structure protruding from the surface to the width of each convex structure and the surface of the adjacent convex structure is greater than or equal to 0.5, in other words, the aspect ratio is greater than or equal to 0.5. The difference between the micronano structure of each convex portion and the surface is further defined when the photoresist layer is exposed to ultraviolet light, which results in different ultraviolet absorption intensity. Therefore, the light having a corresponding thickness after being washed away by the etchant The resist layer, in other words, when the photoresist layer used is a positive photoresist, the photoresist layer on the structure of the convex portion receives more ultraviolet light energy, so it is easier to be removed after development, and the concave portion The structure receives less ultraviolet light energy, and after development, it is not easy to be removed and formed over the light-shielding layer, like a protective layer. Conversely, when the photoresist layer used is a negative photoresist, the photoresist layer in the recess structure can be easily removed after development.

Compared with the prior art, the photomask manufactured by using the photomask manufacturing method of the present invention has the advantage that there is no thermal transfer process. In the general thermal transfer process, due to the cold and heat interactive transfer process, the metal in the recessed part will shrink or deform, and a large-area metal shading layer peeling problem will occur. In addition, the photomask of the present invention has reusability. When the photomask is damaged due to pollution during the exposure process, since the light shielding layer is protected by the photoresist layer, only the contaminated photoresist layer is needed at this time. After the photoresist is removed, the photoresist layer can be coated, exposed, and developed using the photomask manufacturing method of the present invention. The photoresist layer can be reused without the need for the polymer substrate (sub-mold) through the mold core. Reproduction and production of light-shielding layer, greatly reducing the mask system Time, procedure and cost.

The above detailed description is a specific description of a feasible embodiment of the present invention, but this embodiment is not intended to limit the patent scope of the present invention. Any equivalent implementation or change that does not depart from the technical spirit of the present invention should be included in Within the scope of the patent in this case.

To sum up, this case is not only innovative in terms of space type, but also enhances the above-mentioned multiple effects over conventional items. It should have fully met the requirements for statutory invention patents that are novel and progressive. Apply for it in accordance with the law and ask your office for approval. This invention patent application is designed to encourage inventions, and it is a matter of virtue.

100‧‧‧Polymer substrate

101‧‧‧ surface

102‧‧‧ convex structure

103‧‧‧ recess structure

200‧‧‧ Silicon wafer mold

300‧‧‧ shading layer

400‧‧‧Photoresistive layer

S101 ~ S106‧‧‧step flow

S301 ~ S306‧‧‧step flow

S501 ~ S506‧‧‧step flow

FIG. 1 is a flowchart of a manufacturing method of a photomask of the present invention.

FIG. 2 is a schematic diagram of a manufacturing method of the photomask of the present invention.

FIG. 3 is a flowchart of another manufacturing method of the photomask of the present invention.

FIG. 4 is a schematic diagram of a manufacturing method of another photomask according to the present invention.

FIG. 5 is a flowchart of a manufacturing method of another photomask according to the present invention.

FIG. 6 is a schematic diagram of a manufacturing method of another photomask according to the present invention.

In order for the reviewing committee members to understand the technical features, contents and advantages of the present invention and the effects that can be achieved, the present invention is described in detail with the accompanying drawings in the form of embodiments, and the drawings used therein are The main purpose is only for illustration and supplementary instructions. It may not be the actual proportion and precise configuration after the implementation of the present invention, so it should not be interpreted and limited to the scope of rights of the present invention in actual implementation based on the proportion and configuration relationship of the attached drawings.

Please refer to FIG. 1, which is a flowchart of a manufacturing method of a photomask according to the present invention. The steps are as follows: S101: On a surface of a polymer polymer substrate, a plurality of convex and concave structures are formed on the surface by a mold core; S102: coating a light-shielding layer on the surface of the polymer polymer substrate; S103: coating a light-shielding layer on the light-shielding layer; S104: irradiating the photoresist layer with ultraviolet light (UV) for exposure S105: developing the structure of the convex portion through development Removing the photoresist layer while retaining the photoresist layer of the recessed structure; and S106: washing away the light shielding layer covering the convex structure with an etchant.

Please refer to FIG. 2, which is a schematic diagram of a manufacturing method of a photomask according to the present invention. First, one or more of polyurethane acrylate, polyvinyl alcohol, ultraviolet curing resin, and polydimethyloxane are used. On the surface 101 of the combined polymer substrate 100, a plurality of convex structures 102 and concave structures 103 are formed on the surface 101 by using a silicon wafer mold core 200. On the surface 101, the convex structures 102 and The recessed structure 103 is applied by vapor deposition, sputtering, or spin coating to coat the light-shielding layer 300 including one or a combination of aluminum, gold, titanium, nickel, silver, copper, and alumina. Among them, Then, a photoresist layer 400 is coated on the light-shielding layer 300, and the photoresist layer 400 is irradiated with ultraviolet light for exposure. Due to the difference in energy intensity caused by the distance between the convex structure 102 and the concave structure 103 with ultraviolet light, The convex structure 102 receives higher energy than the concave structure 103. The photoresist layer 400 of the convex structure 102 is completely removed through development. The concave structure can retain part of the photoresist layer 400. The photoresist layer 400 is used to protect the concave portion. The light-shielding layer 300 of the structure 103 is finally washed away with an etching solution covering the convex structure 102. Wherein, the height of the overlap of the photoresist layer 400 and the light-shielding layer 300 after being washed away by the etching solution is less than or equal to the height of each convex structure 102 protruding from the surface 101.

Please refer to FIG. 3, which is a flowchart of another photomask manufacturing method according to the present invention. The steps are as follows: S301: On a surface of a polymer polymer substrate, a plurality of convex portions and concave portions are formed on the surface by using a mold core. Structure; S302: coating a light-shielding layer on the surface of a polymer polymer substrate; S303: coating a light-shielding layer on the light-shielding layer, and the photoresist layer further completely covers the convex and concave structures; S304: irradiating the photoresist layer with ultraviolet light Perform exposure S305: remove the photoresist layer on the convex structure through development and retain the photoresist layer on the concave structure; and S306: wash away the light-shielding layer covering the convex structure with an etchant.

Please refer to FIG. 4, which is a schematic diagram of another photomask manufacturing method of the present invention. First, one or both of polyurethane acrylate, polyvinyl alcohol, ultraviolet light curing resin, and polydimethyloxane are used. On the surface 101 of the polymer polymer substrate 100 in the above combination, a plurality of convex structures 102 and concave structures 103 are formed on the surface 101 by a silicon wafer mold core 200, and on the surface 101 and convex structures of the polymer substrate 100 102 and recessed structure 103 Evaporation, sputtering or spin-coating coating, coating a light-shielding layer 300 containing one or a combination of aluminum, gold, titanium, nickel, silver, copper, and alumina, and then the light-shielding layer A photoresist layer 400 is coated on 300, wherein the photoresist layer 400 further covers the convex portion 102, and the photoresist layer 400 is irradiated with ultraviolet light for exposure. The energy intensity caused by the distance between the convex structure 102 and the concave structure 103 is irradiated by ultraviolet rays. Due to the difference, the energy of the convex structure 102 is higher than that of the concave structure 103. The photoresist layer 400 of the convex structure 102 is completely removed through development, and the concave structure can retain part of the photoresist layer 400. The light-shielding layer 300 is used to protect the concave structure 103, and the light-shielding layer 300 covering the convex structure 102 is washed away with an etchant. Wherein, the height of the overlap of the photoresist layer 400 and the light-shielding layer 300 after being washed away by the etching solution is less than or equal to the height of each convex structure 102 protruding from the surface 101.

Please refer to FIG. 5, which is a flowchart of a manufacturing method of a photomask according to the present invention. The steps are as follows: S501: On a surface of a polymer polymer substrate, a plurality of convex and concave structures are formed on the surface by a mold core; S502: coating a light-shielding layer on the surface of a polymer polymer substrate; S503: coating a light-shielding layer on the light-shielding layer, the photoresist layer being a negative photoresist; S504: irradiating the photoresist layer with ultraviolet light (UV) for exposure S505 : The photoresist layer on the convex structure is retained by development and the photoresist layer on the concave structure is removed; and S506: the light-shielding layer covering the concave structure is washed away with an etchant.

Please refer to FIG. 6, which is a schematic diagram of a manufacturing method of the photomask of the present invention. First, a surface 101 of a high-molecular polymer substrate 100 made of one or more of polyurethane acrylate, polyvinyl alcohol, UV-curable resin, and polydimethyloxane is combined with a silicon wafer mold. The core 200 forms a plurality of convex structures 102 and concave structures 103 on the surface 101, and the surface 101, convex structures 102, and concave structures 103 of the polymer substrate 100 are coated by vapor deposition, sputtering, or spin coating. , Coating a light-shielding layer 300 including one, or a combination of aluminum, gold, titanium, nickel, silver, copper, and alumina; wherein, a light-shielding layer 400 is coated on the light-shielding layer 300 and exposed to ultraviolet light When the photoresist layer 400 is exposed, the difference in energy intensity caused by the distance between the convex structure 102 and the concave structure 103 caused by ultraviolet rays causes the energy of the convex structure 102 to be higher than that of the concave structure 103. The convex structure 102 is developed through development. The photoresist layer 400 is completely retained, and the photoresist layer 400 of the concave structure is removed. The photoresist layer 400 is used to protect the light shielding layer 300 of the convex structure 102. Finally, the light shielding layer 300 of the concave structure 103 is covered with an etching solution. Wash off. Among them, the negative photoresist layer 400 and the metal light-shielding layer 300 are exposed on the surface of the photomask. However, since the negative photoresist layer 400 has excellent adhesion and higher hardness than the positive photoresist, it can still completely protect the light. The layer 300 protects the light-shielding layer 300 from the problem of dropping due to the pressing and contact.

To sum up, this case is not only innovative in terms of technical ideas, but also has many of the above-mentioned effects that are not used by traditional methods. It has fully met the requirements of statutory invention patents that are novel and progressive. To approve this invention patent application, to encourage invention, to the utmost convenience.

S100 ~ S106‧‧‧step flow

Claims (11)

A photomask manufacturing method includes the following steps: forming a plurality of convex and concave structures on a surface of a polymer polymer substrate by using a mold kernel; coating the surface of the polymer polymer substrate with a A light-shielding layer; coating a light-shielding layer on the light-shielding layer; irradiating the photo-resistive layer with ultraviolet light for exposure; removing the photo-resistive layer on the convex structure through development and retaining the photo-resistive layer on the concave structure; and etching The liquid removes the light-shielding layer covering the convex structure. The manufacturing method of the photomask according to item 1 of the scope of patent application, wherein the photoresist layer is a positive photoresist. A photomask manufacturing method includes the following steps: forming a plurality of convex and concave structures on a surface of a polymer polymer substrate by using a mold kernel; coating the surface of the polymer polymer substrate with a A light-shielding layer; coating the light-shielding layer on the light-shielding layer; irradiating the photo-resistive layer with ultraviolet light for exposure; retaining the photo-resistive layer on the convex structure through development and removing the photo-resistive layer on the concave structure; and etching The liquid will wash away the light-shielding layer covering the recessed structure. The manufacturing method of the photomask according to item 3 of the scope of the patent application, wherein the photoresist layer is a negative photoresist. According to the manufacturing method of the photomask described in item 1 or 3 of the scope of the patent application, the mold core is a silicon wafer mold core, a quartz substrate mold core, or a nickel substrate mold core. The manufacturing method of the photomask according to item 1 or 3 of the scope of the patent application, wherein the polymer polymer substrate is a flexible substrate, and the polymer polymer substrate is polyurethane acrylate, polyvinyl alcohol, One or a combination of two or more of ultraviolet light-curing resin and polydimethyloxane. The manufacturing method of the photomask according to item 1 or 3 of the scope of patent application, wherein the height of each of the convex structures and the width of the surface of each of the convex structures and the adjacent convex structures protruding from the surface is The ratio is greater than or equal to 0.5. According to the manufacturing method of the photomask according to item 1 or 3 of the scope of the patent application, wherein the light-shielding layer is applied by evaporation coating, sputtering coating, or spin coating. According to the manufacturing method of the photomask according to item 1 or 3 of the scope of the patent application, wherein the light-shielding layer comprises one or more of aluminum, gold, titanium, nickel, silver, copper, and alumina. According to the manufacturing method of the photomask described in item 1 or 3 of the scope of the patent application, wherein the photoresist layer is coated on the light-shielding layer, and the photoresist layer completely covers each of the convex structure and the concave structure. The manufacturing method of the photomask according to item 1 of the scope of the patent application, wherein the height of the overlap between the photoresist layer and the light-shielding layer is less than or equal to each of the protrusions protruding from the surface after washing with an etching solution. The height of the external structure.