CN105278237B - The manufacturing method of light shield and light shield - Google Patents
The manufacturing method of light shield and light shield Download PDFInfo
- Publication number
- CN105278237B CN105278237B CN201410307983.3A CN201410307983A CN105278237B CN 105278237 B CN105278237 B CN 105278237B CN 201410307983 A CN201410307983 A CN 201410307983A CN 105278237 B CN105278237 B CN 105278237B
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- Prior art keywords
- light shield
- shield layer
- light
- base plate
- flexible base
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- Expired - Fee Related
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 230000009975 flexible effect Effects 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000012216 screening Methods 0.000 claims abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 29
- 229920003023 plastic Polymers 0.000 claims description 20
- 239000004033 plastic Substances 0.000 claims description 20
- 239000006229 carbon black Substances 0.000 claims description 19
- 229920000642 polymer Polymers 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 13
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 11
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 11
- 239000004952 Polyamide Substances 0.000 claims description 5
- 229920002647 polyamide Polymers 0.000 claims description 5
- 239000004800 polyvinyl chloride Substances 0.000 claims description 5
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 5
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 4
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical group OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004626 polylactic acid Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims 2
- 150000002085 enols Chemical class 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 229920000747 poly(lactic acid) Polymers 0.000 claims 1
- 238000000034 method Methods 0.000 description 16
- 229920000139 polyethylene terephthalate Polymers 0.000 description 9
- 239000005020 polyethylene terephthalate Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000006978 adaptation Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000010422 painting Methods 0.000 description 3
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Filters (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
Topic of the invention is the manufacturing method of light shield and light shield.A kind of manufacturing method of light shield, step include: offer flexible base plate.In forming multiple micro-structures on flexible base plate.In being coated with light screening material on flexible base plate, substrate is made to form light shield layer.Solidify light shield layer, and light shield layer is simple layer body.
Description
Technical field
The present invention is about a kind of light shield and its manufacturing method.
Background technique
In traditional photolithography techniques, light shield can be mainly divided into contact to ultraviolet light (UV) exposure technique of photoresist layer
Formula photolithography techniques and again two kinds of contracting lithographic techniques.
Light shield used in contact photolithography techniques, surface characteristics pattern dimension and actual copy are on substrate
Pattern is the ratio of 1:1, is exposed in a manner of being directly close to photoresist layer surface；And light used in contracting lithographic techniques again
Cover, surface characteristics pattern dimension are then actual copy in the several times of pattern on substrate, the mode pair projected via optical system
Photoresist is exposed.
Wherein, in contact photolithography techniques, the light-shielding pattern of reticle surface can be contacted with the photoresist layer on substrate
Friction is easy so that light-shielding pattern consume is so that light shield reduced service life.In addition, when being coated with the substrate surface of photoresist layer not
When being very smooth, light shield and photoresist layer can generate uncertain gap and distance, and cause the scattering and diffraction of light, in turn
The scale error of exposure is caused, and the lateral exposure range of photoresist layer shallow-layer part is caused to expand, thus height can not be produced
The light resistance structure of depth-to-width ratio.
Therefore, how to provide it is a kind of low cost, process speed is very fast, operation temperature is lower, be easy production, increase light shield with
Light shield of adaptation of photoresist layer and preparation method thereof, it has also become one of project.
Summary of the invention
In view of the above subject, it is an object of the present invention to provide a kind of low cost, process speed is very fast, operation temperature compared with
Low, easy production increases light shield and the light shield of adaptation of photoresist layer and preparation method thereof.
In order to achieve the above object, a kind of manufacturing method of light shield according to the present invention, step includes: to provide flexible base
Plate.Multiple micro-structures are formed in flexible base plate.In being coated with light screening material on flexible base plate, make to form screening on flexible base plate
Photosphere.Solidify light shield layer, and light shield layer is simple layer body.
In one embodiment, the material of flexible base plate is urethane acrylate (PUA), polyvinyl alcohol (Polyvinyl
Alcohol, PVA), ultraviolet light photopolymerization resin, dimethyl silicone polymer (PDMS) or combinations thereof.
In one embodiment, the material of light shield layer is carbon black photoresist, feux rouges resistance or green light resistance.
In one embodiment, light shield layer and micro-structure directly form patterning light shield layer.
In one embodiment, solidification light shield layer is moved back except part light shield layer, to form patterning light shield layer.
In one embodiment, the step of solidification light shield layer is moved back except part light shield layer further include: thermal plastic high polymer is provided
Plate is attached on light shield layer.Engage thermal plastic high polymer plate with light shield layer.Thermal plastic high polymer plate is removed, part is made
Light shield layer is removed in company with thermal plastic high polymer plate.
In one embodiment, thermal plastic high polymer plate is polyethylene terephthalate (PET), rigid polyvinyl chloride
(Rigid PVC), polyvinyl alcohol (PVA), polyamide (PA) or polylactic acid (PLA) are constituted.
In one embodiment, light screening material is formed by rotary coating, atomizing spraying, blade coating or infiltration coating
In substrate.
A kind of light shield can also be provided in the present invention comprising flexible base plate and light shield layer.The surface of flexible base plate has
There are multiple micro-structures.Light shield layer is filled in the micro-structure and forms patterning shading for simple layer body, light shield layer and micro-structure
Layer.
In one embodiment, the material for patterning light shield layer is carbon black photoresist, feux rouges resistance or green light resistance.
In one embodiment, light shield layer is set to the substrate surface between the micro-structure simultaneously.
In conclusion the present invention is by forming multiple micro-structures on flexible base plate, and by shading in a manner of coating
Material is formed in substrate, such production method is mutually more conventional use metal layer body for the mode of light screening material more cost more
It is low, process speed is very fast, operation temperature is lower, be easy production other than, because light screening material be solution, also may make the layer of light shield layer
Body uniformity is preferable.In addition, being exposed by selecting flexible base plate also to may make the adaptation of light shield and semiconductor substrate higher
The precision of development is preferable.
Detailed description of the invention
Fig. 1 is the light shield manufacture flow chart of present pre-ferred embodiments.
Fig. 2A~2F is the light shield manufacture schematic diagram of present pre-ferred embodiments.
Fig. 2 G is the semiconductor crystal circle structure formed using light shield of the invention.
Fig. 3 is the detail flowchart of the step S5 of the light shield manufacture of Fig. 1.
Fig. 4 A~4C is the another production schematic diagram of light shield of present pre-ferred embodiments.
Fig. 5 A~5B rotates carbon black photoresist in tool for rotary coating during the light shield manufacture of present pre-ferred embodiments
There are the observation chart and partial enlarged view of the light shield of circular hole structure.
Fig. 6 A~6B is the light shield observation chart and partial enlarged view after Fig. 5 A~5B removal carbon black part photoresist.
Specific embodiment
Hereinafter with reference to relevant drawings, illustrate a kind of light shield and preparation method thereof according to present pre-ferred embodiments, wherein
Identical component, step will be illustrated with identical reference marks.In following embodiment and attached drawing, with the indirect phase of the present invention
The component of pass, step have been omitted from and are not painted；And the size relationship of each inter-module is only to ask and be readily understood by attached drawing, it is non-to
Limit actual ratio.
Need to first illustrate, light shield of the invention with and preparation method thereof can be applied to semiconductor and Electro-Optical Display
Yellow light lithography process, or it is applied to yellow light lithography process but not with above-mentioned when light emitting diode fabricating patterned sapphire substrate
Using for limitation.In addition, light shield of the invention can be contact solid light shield.
Please also refer to Fig. 1 to Fig. 2 F, wherein Fig. 1 is the light shield manufacture flow chart of present pre-ferred embodiments.Fig. 2A~
2F is the light shield manufacture schematic diagram of present pre-ferred embodiments.
The light shield of the present embodiment comprising flexible base plate 11 and light shield layer 12.The surface of flexible base plate 11 has
Multiple micro-structure 11a.The present embodiment is by taking recess configuration is presented in micro-structure 11a as an example, and but not limited to this.Light shield layer 12 is filled in
The micro-structure 11a and be simple layer body, light shield layer 12 and micro-structure 11a form a patterning light shield layer.But in other implementations
In aspect, 11 surface of flexible base plate that can also have light shield layer while be set between micro-structure 11a.It also that is, can be according to difference
Design so that light shield layer be only arranged at micro-structure 11a or light shield layer may be disposed at micro-structure 11a and partly or entirely
The surface of flexible base plate 11.
The present embodiment so-called " light shield layer " is the layer body after solidifying for light screening material in manufacturing process, and " patterning hides
Photosphere " be then after the completion of light shield actual setting in the light shield layer of substrate.It is noted that if light shield layer has formed pattern when being coated with
The appearance of change, then the light shield layer of the embodiment is equal to patterning light shield layer.And if after the coating of the light shield layer of the embodiment
The light shield layer appearance after the completion of light shield can be formed it is still necessary to other steps, then light shield layer is only manufacturing process in the embodiment
Intermediate product, and light shield layer is different from patterning light shield layer.
It will be described below, the manufacturing process of the light shield of the present embodiment.
The light shield manufacture step of the present embodiment includes at least: providing flexible base plate 11 (step S1).
The material of the flexible base plate 11 of the present embodiment is urethane acrylate (PUA), polyvinyl alcohol (Polyvinyl
Alcohol, PVA), the combination or other tool light transmissions of ultraviolet light photopolymerization resin, dimethyl silicone polymer (PDMS), aforementioned material
The soft high molecular material of property.Wherein dimethyl silicone polymer (PDMS) can according to different demands select h-PDMS, s-PDMS,
One of UV-PDMS.
It is advantageous in that in the present embodiment using flexible base plate, even if wafer size increases and makes crystal column surface simultaneously
Irregularity degree amplify therewith together, compared to light shield made by traditional rigid substrates, as made by flexible base plate
Light shield can have preferable compactness because of deflection with crystal column surface, therefore can reduce in exposure development technique because of crystal column surface
Error caused by out-of-flatness and so that wafer circuit obtained is also had preferable Line-width precision.
Then, in forming multiple micro-structure 11a (step S2) on flexible base plate 11.Micro-structure on flexible base plate 11
11a can be replicated in a manner of casting from master mold 10 substrate 11, or in a manner of machining or chemical etching
In its surface processing and fabricating after substrate forms plate.And the present embodiment by flexible base plate 11 in a manner of casting from master mold 10
For duplication.
Please also refer to Fig. 2A~2C, firstly, the present embodiment uses material of the Silicon Wafer as master mold 10, and passing through
Dry-etching mode is learned in the multiple columnar micro-structures of protrusion of silicon wafer surface production, forms master mold 10.Then, then by substrate
(such as PDMS) is filled in master mold surface (Fig. 2 B) in a manner of casting, and heating makes substrate be formed by curing flexible base plate 11.
Finally, again removing the flexible base plate 11 being fully cured from master mold 10, tool recess hole shape knot in surface as shown in Figure 2 C is formed
The PDMS transparent substrates of structure.40 DEG C~100 DEG C heating can be used in the one experimental example of the present embodiment, and to be formed by curing substrate flexible
Property substrate 11.
In being coated with light screening material on flexible base plate 11, make to form light shield layer 12 (step S3) on flexible base plate 11.So
And the present embodiment is by the way of rotary coating (Spin Coating), but can also have that implement the light screening material of aspect be to pass through
The mode that atomizing spraying collocation air knife strikes off is set to flexible base plate 11.Or it can be coated with by blade coating or infiltration
Mode can also achieve similar Painting effect.
Light screening material is a solution, may be, for example, carbon black photoresist, feux rouges resist or green light resist or any covers spy
The solution of the long rotatable coating light screening material of standing wave.In addition, can also increase the step of surface treatment before step S3.
Solidify light shield layer 12, and light shield layer 12 is simple layer body (step S4).Light shield layer 12 is formed in flexible base plate 11
Above and as shading it is used.It is not particularly limited the aspect of light shield layer 12 in the present embodiment.And according to different light screening materials,
Light shield layer 12 can be made of carbon black photoresist, feux rouges resistance or green light resistance.
It, can be because the surface tension at the edge micro-structure 11a be made when the light screening material known in Fig. 2 D is coated on micro-structure 11a
It is slightly concave with presenting.And the present embodiment can be by adjusting the deal of light screening material or the speed of rotary coating, so that lightproof material
Material is only filled at micro-structure 11a, in other words, light shield layer 12 and micro-structure 11a can be made directly to form patterning light shield layer.
Supplementary explanation, if rotary coating, the speed of rotary coating will be according to the mobility, flexible of light screening material
The surface roughness of property substrate 11 and distribution situation or the construction of the micro-structure and adjusted.
In addition, micro-structure 11a shape and depth design will depend in light screening material itself penetrance and
It is adjusted, by taking carbon black photoresist is light screening material as an example, optical density (OD) (Optical of the carbon black photoresist for ultraviolet light
Density, O.D.) it is about 3/ μm, imply that the carbon black photoresist layer of every 1 μ m thick is about 0.001 for ultraviolet light transmittance.Change speech
It, the depth (carbon black photoresist layer thickness) of micro-structure 11a will affect ultraviolet light transmittance, and shallower micro-structure 11a has higher
Light transmittance, deeper micro-structure 11a then has lower light transmittance.
Though the micro-structure 11a of the present embodiment is designed as the aspect of rectangle, in terms of can also having other implementations, such as trapezoidal,
The appearance of wedge shape or Pyramid, so that it is filled in the thickness of the light screening material of each micro-structure 11a and non-uniform, therefore can shape
At the light shield layer with a variety of different penetrances.
According to above-mentioned steps, the one experimental example of the present embodiment forms light shield using following control condition.Firstly, in substrate
It passes to 15 watts of oxygen plasma-based two minutes, increases the hydrophily of substrate surface.Then, then with the speed rotary coating of 4000rpm
Light screening material, light screening material is by taking carbon black photoresist EK520 as an example.Carbon black photoresist EK520 probably includes 22.5 weight percent
Carbon black particle.Then, then with 70 DEG C of baking carbon black photoresists EK520 two minutes Celsius, light as shown in Figure 2 D can be formed
Cover structure.
Then, Fig. 2 E and Fig. 2 G is as applied along aforementioned photomask structure in the schematic diagram of semiconductor technology.By the present embodiment
Light shield be covered on the photoresist layer 21 on semiconductor substrate 20, and by removing light shield after exposure development, can be formed such as figure
The semiconductor structure of 2F, Fig. 2 G.
It then, is the detail flowchart of the step S5 of the light shield manufacture of Fig. 1 please also refer to Fig. 1, Fig. 3 to Fig. 4 C, Fig. 3.
Fig. 4 A~4C is the another production schematic diagram of light shield of present pre-ferred embodiments.
The light shield manufacture process of the present embodiment also includes that " solidification light shield layer 12 is moved back except part light shield layer 12, to form figure
The step of case light shield layer (step S5) ".That is, in addition to making light shield layer 12 and micro-structure 11a directly form patterning light shield layer
Other than the practice, one removing step of increase that also can be additional forms similar 12 structure of light shield layer.
In rotary coating on substrate 11 (Spin Coating) light screening material, make to form light shield layer 12 on flexible base plate 11
(step S3) can be formed such as the case where Fig. 4 A, also that is, light screening material is other than being filled at micro-structure 11a, be also coated on micro-
The surface of flexible base plate 11 between structure 11a.It at this time then must be by removing part light shield layer, to form patterning light shield layer
(step S5).
Specifically, step S5 further include: thermal plastic high polymer plate 13 is provided and is attached on light shield layer (step S51).
Thermal plastic high polymer plate 13 can be soft mould material, may be, for example, polyethylene terephthalate (PET), rigid polyvinyl chloride
(Rigid PVC), polyvinyl alcohol (PVA), polyamide (PA) or polylactic acid (PLA) or other suitable films with adhesion properties
Material is constituted.For this is using polyethylene terephthalate (PET) as thermal plastic high polymer plate 13.It selects poly- to benzene two
The reason of formic acid second diester (PET) for its with lower glassy state transition temperature (70 degree about Celsius) and its have it is preferable
Surface adhesion force.But not to select polyethylene terephthalate (PET) for limitation.
Then, thermal plastic high polymer plate 13 is made to engage (step S52) with light shield layer 12.By imposing appropriate pressure and temperature
Degree, such as the present embodiment can have the operating condition of an experimental example is the 0.2MPa for providing one minute, 80 DEG C of pressure Celsius and temperature
Degree is applied to thermal plastic high polymer plate 13 with a thickness of 17 μm, make 13 surface of thermal plastic high polymer plate occur melting and with painting
It is distributed in 12 gluing of light shield layer on the surface of substrate 11.
Then, thermal plastic high polymer plate 13 is removed, part light shield layer 12 is made to remove (step in company with thermal plastic high polymer plate
Rapid S53).Whereby, the light shield layer 12 for being coated on the surface of flexible base plate 11 can be removed so that light screening material be only filled in it is micro-
At structure 11a.
Please also refer to Fig. 5 A to Fig. 6 B, Fig. 5 A~5B is that the light shield manufacture of present pre-ferred embodiments rotates painting in the process
Cloth rotates carbon black photoresist in the observation chart and partial enlarged view of the light shield with circular hole structure.Fig. 6 A~6B is Fig. 5 A~5B shifting
Except the light shield observation chart and partial enlarged view after carbon black part photoresist.
Carbon black photoresist rotary coating is when flexible base plate known in Fig. 5 A, it will it is filled in micro-structure, and because
Microstructured edge is formed by surface tension effects and presents slightly concave.Fig. 6 A~Fig. 6 B is then to utilize thermal plastic high polymer material
Flitch material removes the light shield observation chart after carbon black part photoresist.The light shield layer that the surface of flexible base plate will be coated on is most of
It will be removed, so that light screening material is only filled at micro-structure, and form light shield.
In conclusion the present invention is by forming multiple micro-structures on flexible base plate, and by shading in a manner of coating
Material is formed in flexible base plate, such production method is mutually more conventional use metal layer body for the mode of light screening material more at
This is lower, process speed is very fast, operation temperature is lower, is easy other than production, because light screening material is solution, also may make light shield layer
Layer body uniformity it is preferable.In addition, by selecting flexible base plate also to may make the adaptation of light shield and semiconductor substrate higher,
The precision of exposure development is preferable.
The foregoing is merely illustratives, rather than are restricted person.It is any without departing from spirit and scope of the invention, and to it
The equivalent modifications or change of progress, are intended to be limited solely by appended claims.
Symbol description
10: master mold
11: flexible base plate
11a: micro-structure
12: light shield layer
13: thermal plastic high polymer plate
20: semiconductor substrate
21: photoresist layer
S1~S5, S51~S53: step
Claims (5)
1. a kind of manufacturing method of light shield, step include:
One flexible base plate is provided；
In forming multiple micro-structures on the flexible base plate；
In one light screening material of rotary coating on the flexible base plate, the substrate is made to form a light shield layer；And
Solidify the light shield layer to move back except the part light shield layer, to form a patterning light shield layer, step includes:
A thermal plastic high polymer plate is provided to be attached on the light shield layer；
Make the thermal plastic high polymer plate and the light shield layer gluing；And
The thermal plastic high polymer plate is removed, removes the part light shield layer in company with the thermal plastic high polymer plate；
Wherein, the light shield layer is simple layer body.
2. manufacturing method as described in claim 1, wherein the material of the flexible base plate is urethane acrylate, poly- second
Enol, ultraviolet light photopolymerization resin, dimethyl silicone polymer or combinations thereof.
3. manufacturing method as described in claim 1, wherein the material of the light shield layer is carbon black photoresist, feux rouges resistance or green light
Resistance.
4. manufacturing method as described in claim 1 hides wherein the light shield layer and the micro-structure directly form a patterning
Photosphere.
5. manufacturing method as described in claim 1, wherein the thermal plastic high polymer plate is a poly terephthalic acid second two
Ester, rigid polyvinyl chloride, polyvinyl alcohol, polyamide or polylactic acid are constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410307983.3A CN105278237B (en) | 2014-06-30 | 2014-06-30 | The manufacturing method of light shield and light shield |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410307983.3A CN105278237B (en) | 2014-06-30 | 2014-06-30 | The manufacturing method of light shield and light shield |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105278237A CN105278237A (en) | 2016-01-27 |
| CN105278237B true CN105278237B (en) | 2019-11-01 |
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|---|---|---|---|
| CN201410307983.3A Expired - Fee Related CN105278237B (en) | 2014-06-30 | 2014-06-30 | The manufacturing method of light shield and light shield |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI613506B (en) * | 2017-01-04 | 2018-02-01 | How to make the mask |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060079957A (en) * | 2005-01-04 | 2006-07-07 | 삼성에스디아이 주식회사 | Soft conformable photomask for photolithography, process for preparing the same, and fine pattering process using the same |
| KR20090003601A (en) * | 2007-07-03 | 2009-01-12 | 주식회사 엘지화학 | Flexible photomask and method for manufacturing the same |
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2014
- 2014-06-30 CN CN201410307983.3A patent/CN105278237B/en not_active Expired - Fee Related
Also Published As
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| CN105278237A (en) | 2016-01-27 |
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