JP2014058151A - Mold for imprint, imprint method and pattern formed-body - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a mold for an imprint suitable for forming a fine pattern, an imprint method using the same, and a pattern-formed body produced using the imprint method.SOLUTION: The mold for an imprint is composed of: a pattern transfer mold 20; and a residual resin curing mold 30. The pattern transfer mold 20 transfers a plurality of patterns 13 made of ruggedness to the resin layer 12 to be transferred applied to the surface of a base material 11 to a two-dimensional direction at fixed intervals. The residual resin curing mold 30, after the transfer of the patterns for a plurality of times by the pattern transfer mold 20, bulkly flattens an uncured resin 14 swelled out and remaining to the outer circumference of the pattern transfer mold 20 at a part of the resin layer 12 to be transferred and cures the same.

Description

  The present invention relates to an imprint mold, an imprint method using the imprint mold, and a pattern forming body manufactured using the imprint method.

  Structures in which a specific fine pattern is formed on a substrate are widely used. Examples of the structure in which a fine pattern is formed include a semiconductor device, an optical element, a wiring circuit, a recording device, a medical test chip, a display panel, a micro flow path, and the like.

  A method of optically transferring a pattern is used to form a fine pattern in a semiconductor device manufacturing process or the like. For example, a photomask in which a pattern made of an opaque material such as chrome is formed on a transparent substrate such as glass, is placed directly or indirectly on a semiconductor substrate coated with a photosensitive resin, and light is emitted from the backside of the photomask. The pattern of the photomask is transferred onto the substrate by selectively exposing the resin in the light transmitting portion by irradiating the film. This technique is generally called photolithography.

  However, in such a pattern formation method, since the size and shape of the pattern to be formed greatly depend on the wavelength of light to be exposed, the pattern can be faithfully transferred onto a semiconductor substrate, particularly in the transfer of a fine pattern. It has become difficult.

In addition, there is a problem that the optical contrast is reduced due to the diffraction phenomenon of light and the apparatus is expensive because it requires a complicated mechanism.
These problems apply not only to the manufacture of semiconductor devices, but also to various pattern formations using photolithography methods such as displays, recording media, biochips, and optical devices.

Other methods for forming fine patterns include electron beam lithography and focused ion beam lithography, but there are problems with poor throughput and expensive equipment.
Therefore, in recent years, a technique called an imprint method has been proposed which can transfer a fine pattern more faithfully than the conventional method (see Non-Patent Document 1).

In order to transfer a pattern to a large area, there are many problems such as fabrication of a large area mold and uniformity of pressing pressure during transfer.
In addition, a step repeat method in which continuous transfer is performed using a small mold has been studied (see Patent Document 1).

  Hereinafter, an example of a conventional optical imprint method using a typical step repeat method will be described with reference to FIG.

First, as shown in FIG. 1A, a photocurable resin is coated on a substrate 11 to form a transferred resin layer 12.
Next, as shown in FIG. 1 (b), the mold 10 is pressed against the transferred resin layer 12, and as shown in FIG. Harden.
Next, as shown in FIG. 1 (d), the mold 10 is peeled from the substrate 11. Thus, the pattern 13 is formed on the transferred resin layer 12.

Next, as shown in FIG. 1 (e), the mold 10 is pressed against the transferred resin layer 12 in the region adjacent to the cured pattern 13, and UV light is irradiated as shown in FIG. 1 (f). A pattern 13 is formed on the transferred resin layer 12 by curing the transferred resin layer 12 and peeling the mold 10 from the substrate 11.
Thus, by repeating the process of imprinting the region adjacent to the cured pattern 13, the pattern 13 can be formed in a large area as shown in FIGS.

However, the curing of many photocurable resins is inhibited by oxygen. For this reason, the resin that protrudes outside the mold 10 when pressed against the mold 10 is affected by oxygen in the air and is not cured.
For this reason, when imprinting is performed on a large area by the step-and-repeat method, uncured resin 14 remains on the substrate 11 as shown in FIG.

This is because the thickness of the remaining film 15 where the uncured resin 14 is present cannot be controlled, and it is difficult to remove the remaining film 15 appropriately. This causes a problem when the substrate 11 is etched using the etching mask as a mask.
In addition, this is a problem because when the base material 11 having the resin pattern 13 is processed in a later step, the uncured resin 14 adheres to a jig or device and causes contamination. Become.

A method of processing a dummy pattern or a through hole in a mold so that the resin does not protrude has been proposed, but the mold manufacturing process is complicated (see Patent Document 2 and Patent Document 3).
Moreover, although the method of wash | cleaning the protruding resin later is proposed, in order to leave the protruding resin uncured reliably, the mold manufacturing process becomes complicated (see Patent Document 4).

JP 2007-19451 A JP 2008-91782 A JP 2011-23660 A JP 2008-108805 A

Appl. Phys. Lett. , Vol. 67, p. 3314 (1995)

  The present invention has been made to solve the problems of the pattern forming method as described above. The imprint mold suitable for forming a fine pattern, the imprint method using the imprint mold, and the It aims at providing the pattern formation body manufactured using an imprint method.

  The invention according to claim 1 of the present invention is an imprint mold, wherein a pattern transfer mold for transferring a pattern consisting of irregularities to a transferred resin layer applied on the surface of a substrate, and the pattern transfer mold And a residual resin curing mold that flattens and cures the portions of the plurality of resin layers to be transferred that protrude to the outer periphery of the pattern transfer mold after a plurality of times of pattern transfer. .

  The invention according to claim 2 of the present invention is the imprint mold according to claim 1, wherein the residual resin curing mold is arranged in a two-dimensional direction for accommodating each pattern transferred to the transferred resin layer for each pattern. The pattern transfer mold has a pattern composed of a plurality of concave portions arranged and a convex portion surrounding the plurality of concave portions and facing portions of the plurality of resin layers to be transferred that remain. It is characterized in that it matches the shape of the external plan view.

  The invention according to claim 3 of the present invention is the imprint mold according to claim 1 or 2, wherein the pattern transfer mold has a square shape in plan view, and the residual resin curing mold is formed on the resin layer to be transferred. A lattice shape comprising a plurality of concave portions arranged in a two-dimensional direction for accommodating each transferred pattern for each pattern, and convex portions surrounding the plurality of concave portions and facing the portions of the plurality of transferred resin layers that remain. The pitch of the said recessed part which has a pattern is equal to the length of one side of the said pattern transfer mold, It is characterized by the above-mentioned.

  The invention according to claim 4 of the present invention is the imprint mold according to claim 1 or 2, wherein the pattern transfer mold has a rectangular shape in plan view, and the residual resin curing mold is the resin to be transferred. A plurality of recesses arranged in a two-dimensional direction for accommodating each pattern transferred to the layer for each pattern, and a protrusion that surrounds the plurality of recesses and faces the remaining portions of the plurality of transferred resin layers. The pitches in the vertical direction and the horizontal direction of the adjacent concave portions are equal to the length of one side in the vertical and horizontal directions of the pattern transfer mold, respectively.

  According to a fifth aspect of the present invention, in the imprint mold according to any one of the second to fourth aspects, the depth of the concave portion constituting the residual resin curing mold does not interfere with the pattern. And the height of the pattern is larger.

  The invention according to claim 6 of the present invention is an imprinting method, wherein a resin coating step of applying a transfer resin layer on the upper surface of a substrate, and a pattern made of unevenness by a pattern transfer mold on the transfer resin layer A pattern transfer process in which the pattern is transferred a plurality of times to form the pattern at a predetermined interval in a two-dimensional direction, and after the pattern transfer process, a plurality of portions of the transferred resin layer that protrude and remain outside the pattern transfer mold remain. And a residual resin curing step of flattening and curing by a resin curing mold.

  The invention according to claim 7 of the present invention is the imprint method according to claim 6, wherein the transferred resin layer is made of a thermosetting resin or a photocurable resin.

  The invention according to claim 8 of the present invention is the imprint method according to claim 6 or 7, wherein the transferred resin layer is made of a photocurable resin, and the pattern transfer mold and the residual resin cured mold are light transmissive. It is formed from a material.

  The invention according to claim 9 of the present invention is a pattern molded body, which is manufactured using the imprint method according to any one of claims 6 to 8.

  ADVANTAGE OF THE INVENTION According to this invention, the imprint mold suitable for formation of a fine pattern, the imprint method using the imprint mold, and the pattern formation body manufactured using an imprint method can be provided.

It is a schematic sectional drawing which shows an example of the conventional pattern formation method. It is a schematic sectional drawing of the pattern transfer mold which comprises the mold for imprint in embodiment of this invention. It is a schematic plan view of the residual resin hardening mold which comprises the mold for imprint in embodiment of this invention. It is a schematic sectional drawing in alignment with the broken line ab of FIG. (A)-(m) is a schematic sectional drawing for description which shows the manufacturing process of the pattern formation body by the imprint method in embodiment of this invention. (B), (e), (g), (i), and (m) are top views of the schematic cross-sectional views shown in FIGS. 5 (b), (e), (g), (i), and (m). It is the schematic plan view seen from. (A)-(f) is a schematic sectional drawing for description which shows the manufacturing process of the pattern transfer mold which comprises the mold for imprint in embodiment of this invention. (A)-(e) is a schematic sectional drawing for description which shows the manufacturing process of the residual resin hardening mold which comprises the mold for imprint in embodiment of this invention. It is the schematic plan view which looked at the schematic sectional drawing shown in FIG.8 (e) from the upper surface. It is a schematic plan view for description which shows the other example of the manufacturing process of the pattern formation body by the imprint method of the Example of this invention. It is a schematic sectional drawing which shows an example of the manufacturing process of the pattern formation body in the Example of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

First, as shown in FIG. 2, a pattern transfer mold 20 for forming a desired pattern is produced. On the surface of the pattern transfer mold 20 that is in contact with the resin layer 12 to be transferred, a pattern 201 composed of unevenness for transfer is formed. Further, the material of the pattern transfer mold 20 may be appropriately selected. As a material of the pattern transfer mold 20, for example, silicon, quartz, nickel or the like may be preferably used.
Moreover, as a manufacturing method of the pattern transfer mold 20, a known mold manufacturing method may be used as appropriate.

Here, for example, when quartz is used as the material of the pattern transfer mold 20, the quartz is transmissive to general exposure light, and the back side of the mold (the surface on which the uneven pattern is not formed) side This method is suitable when the imprint method according to the embodiment of the present invention is used for optical imprinting in which exposure is performed from the beginning.
In addition, you may perform the surface treatment for mold release improvement to the surface in which the pattern 201 of the pattern transfer mold 20 was formed. For example, fluoropolymer processing or plasma processing may be performed.

Next, after a plurality of times of pattern transfer to the transferred resin layer 12 by the pattern transfer mold 20, the uncured resin 14 in the portions of the transferred resin layers 12 that protrude and remain outside the pattern transfer mold 20 is removed. A residual resin curing mold 30 is prepared for leveling and curing.
The material of the residual resin curing mold 30 may be appropriately selected. As a material of the residual resin curing mold 30, for example, silicon, quartz, nickel or the like may be preferably used.
Moreover, as a manufacturing method of the residual resin curing mold 30, a known mold manufacturing method may be used as appropriate.

  Here, for example, when quartz is used as the material of the residual resin curing mold 30, the quartz is transmissive to general exposure light, and light is exposed from the back side of the residual resin curing mold 30. This is suitable when the imprint method of the present invention is used for imprinting.

As shown in FIGS. 3 and 4, the residual resin curing mold 30 includes a plurality of recesses 303 arranged in a two-dimensional direction for accommodating each pattern 13 transferred to the transferred resin layer 12 for each pattern, and the plurality of recesses 303. And a plurality of remaining resin layer 12 to be transferred, which has a lattice pattern 301 including convex portions 302 projecting from the uncured resin 14.
In this case, in the grid pattern 301 formed in the residual resin curing mold 30, the pitch A (see FIG. 3) between the concave portions 303 adjacent to each other is equal to the length A (see FIG. 2) of one side of the pattern transfer mold 20. It is desirable to be equal.
In this case, the depth C of the pattern 301 formed on the residual resin curing mold 30 is preferably larger than the height B of the pattern 201 formed on the pattern transfer mold 20. This is to prevent the concave portion 303 of the residual resin curing mold 30 and the pattern 201 from interfering with each other.

Further, in this case, the width D of the convex portion 302 of the lattice pattern 301 formed on the residual resin curing mold 30 is the area of the desired pattern transferred to the transferred resin layer, the amount of photocurable resin used, and the viscosity. You may set suitably according to etc. Here, it is desirable that the width D of the convex portion 302 of the lattice pattern 301 formed on the residual resin curing mold 30 is 10 μm to 1 mm.
In addition, you may perform the surface treatment for mold release improvement on the surface which contacts the to-be-transferred resin layer of the residual resin hardening mold 30 containing the grid | lattice-like pattern 301. FIG. For example, fluoropolymer processing or plasma processing may be performed.

  Next, the case where a pattern formation body is produced by the optical imprint method using the pattern transfer mold 20 and the residual resin curing mold 30 will be described with reference to FIGS.

First, as shown in FIG. 5A, a photocurable resin is coated on the substrate 11 to form a transferred resin layer 12. As a method for forming the transferred resin layer 12, a known resin coating technique may be used as appropriate. For example, a spin coating method or the like may be used.
The base material 11 may be appropriately selected according to the application. As the base material 11, for example, a silicon substrate, a quartz substrate, a sapphire substrate, an SOI substrate, or the like may be suitably used.
Here, for example, when a quartz substrate is used as a base material, the quartz has transparency to general exposure light, and the present invention is applied to optical imprint in which exposure is performed from the back side of the base material. It is suitable when the imprint method shown in the form is used.

Next, as shown in FIG. 5B and FIG. 6B, the pattern transfer mold 20 is pressed against the transferred resin layer 12 formed on the substrate 11, and the pattern formed by the unevenness of the pattern transfer mold 20. A pattern corresponding to a shape opposite to that of 201 is transferred to the resin layer 12 to be transferred. Thereafter, as shown in FIG. 5C, UV light is irradiated from the back side of the pattern transfer mold 20 to cure the pattern 13 transferred to the transferred resin layer 12. Next, as shown in FIG. 5 (d), the pattern transfer mold 20 is peeled from the substrate 11.
When the pattern 13 is transferred to the transferred resin layer 12, the uncured resin 14 protrudes and remains on the outer periphery of the pattern transfer mold 20.

Next, as shown in FIG. 5 (e) and FIG. 6 (e), the relative position between the substrate 11 and the pattern transfer mold 20 is changed by the step-and-repeat method so as to be adjacent to the cured pattern 13. The pattern transfer mold 20 is again pressed against the transferred resin layer 12 in the region to be transferred, and a pattern corresponding to the shape opposite to the concave / convex pattern 201 of the pattern transfer mold 20 is transferred to the transferred resin layer 12. Thereafter, as shown in FIG. 5 (f), the pattern 13 transferred to the transferred resin layer 12 is cured by irradiating UV light from the back side of the pattern transfer mold 20, and the pattern transfer mold 20 is removed from the substrate 11. Peel off.
Similarly, as shown in FIGS. 5G to 5I, FIGS. 6G and 6I, the above-described steps are repeated, so that the transfer resin layer 12 on the substrate 11 is two-dimensionally formed. Patterns 13 arranged at regular intervals in the direction are formed.

After the pattern 13 is transferred and cured in a desired region of the transferred resin layer 12, the process proceeds to a step of curing the uncured resin 14 that protrudes from the outer periphery of the pattern transfer mold 20 when the pattern 13 is transferred. .
That is, as shown in FIG. 5 (j), the pattern 13 is formed in the concave portion 303 of the residual resin curing mold 30 so that the uncured resin 14 on the substrate 11 and the convex portion 302 of the residual resin curing mold 30 overlap each other. Align to accommodate. Thereafter, as shown in FIG. 5 (k), the convex portion 302 of the residual resin-curing mold 30 is pressed against the uncured resin 14, and the uncured resin 14 is formed between the patterns 13 adjacent to each other. Flatten to match the top surface of 15. Thereafter, the uncured resin that has been flattened is cured by irradiating UV light from the back side of the residual resin curing mold 30. Next, as shown in FIGS. 5 (m) and 6 (m), the residual resin curing mold 30 is peeled from the substrate 11.

  In this case, since the pitch A between the concave portions 303 adjacent to each other of the lattice pattern 301 formed in the residual resin curing mold 30 is equal to the length A of one side of the pattern transfer mold 20, the uncured resin 14 and the residual resin The convex portions 302 of the curing mold 30 can be reliably stacked, and the uncured resin 14 can be flattened and cured without being inhibited by oxygen. This makes it possible to uniformly control the thickness of the remaining film 15 where the uncured resin 14 is present, and the remaining film 15 can be easily removed.

  Further, in this case, since the depth C of the concave portion 303 of the lattice pattern 301 formed in the residual resin curing mold 30 is larger than the height B of the pattern 201 formed in the pattern transfer mold 20, the residual resin curing mold 30 is an uncured resin that does not contact or interfere with the cured resin pattern 13 transferred to the transferred resin layer 12 on the substrate using the pattern transfer mold 20, and does not damage the cured resin pattern 13. 14 can be cured.

  Further, in this case, the width D of the convex portion 302 of the lattice pattern 301 formed on the residual resin curing mold 30 depends on the area of the desired pattern, the amount of the photocurable resin used for the transferred resin layer 12, the viscosity, and the like. Accordingly, by setting the thickness to 10 μm to 1 mm, the uncured resin 14 can be flattened and cured reliably, and the thickness of the remaining film 15 can be uniformly controlled.

  Hereinafter, the pattern formation method of the present invention will be described with respect to an example in which a pattern transfer mold and a residual resin curing mold constituting a mold for optical imprinting are produced and pattern formation is performed. The pattern forming method of the embodiment of the present invention is not limited to the following embodiment.

First, the case of producing a pattern transfer mold will be described with reference to FIG.
A quartz substrate was used as the substrate constituting the pattern transfer mold 20.
When producing the pattern transfer mold, first, as shown in FIG. 7A, a Cr film is formed as a hard mask layer on a quartz substrate 41 to a thickness of 30 nm to form a Cr layer 42. A positive resist FEP-171 (manufactured by FUJIFILM Electronics Materials) was coated on the layer 42 to a thickness of 200 nm to form a resist film 43.

  Next, as shown in FIG. 7B, after the electron beam is irradiated to the resist film 43 with an electron beam at a dose of 10 μC / cm 2 with an electron beam drawing apparatus, a developing process using a developer, a rinsing process, and The rinse solution was dried to obtain a resist pattern 44. Here, a TMAH aqueous solution was used as a developing solution, and pure water was used as a rinsing solution. At this time, the area for forming the pattern 44 was 20 mm × 20 mm.

Next, as shown in FIG. 7C, the Cr layer 42 was etched by dry etching using an ICP dry etching apparatus, and a Cr pattern 45 was obtained. At this time, the etching conditions for the Cr layer 42 were Cl2 flow rate 40 sccm, O2 flow rate 10 sccm, He flow rate 80 sccm, pressure 30 Pa, ICP power 120 W, and RIE power 50 W.
Next, the resist pattern 44 was peeled off by O 2 plasma ashing (conditions: O 2 flow rate 500 sccm, pressure 30 Pa, RIE power 1000 W).

  Next, as shown in FIG. 7D, the quartz substrate 41 was etched by dry etching using an ICP dry etching apparatus. At this time, the etching conditions of the quartz substrate 41 were C4F8 flow rate 10 sccm, O2 flow rate 10 to 25 sccm, Ar flow rate 75 sccm, pressure 2 Pa, ICP power 20 W, and RIE power 550 W. At this time, the height B of the pattern 201 was set to 70 nm.

Next, as shown in FIG. 7E, the quartz substrate 46 on which the pattern 201 was formed was cut so that the length A of one side was 20 mm.
Next, as shown in FIG. 7F, after the remaining Cr pattern was wet cleaned, a mold release treatment was performed using a fluorine-based mold release agent.
From the above, the pattern transfer mold 20 was obtained.

Next, the case of producing a residual resin curing mold will be described with reference to FIGS.
A quartz substrate was used as the substrate constituting the residual resin curing mold 30.
When producing the residual resin curing mold, first, as shown in FIG. 8A, a Cr film is formed as a hard mask layer on a quartz substrate 41 to a thickness of 30 nm to form a Cr layer 42. A positive resist FEP-171 (manufactured by FUJIFILM Electronics Materials) was coated on the Cr layer 42 to a thickness of 200 nm to form a resist film 43.

  Next, as shown in FIG. 8B, the resist film 43 is irradiated with an electron beam at a dose of 10 μC / cm 2 to draw a lattice pattern with an electron beam drawing apparatus, and then developed with a developer. The resist pattern 44 was obtained by performing the treatment, the rinsing treatment, and drying the rinsing liquid. Here, a TMAH aqueous solution was used as a developing solution, and pure water was used as a rinsing solution. At this time, the pitch A between the adjacent concave portions 303 of the formed lattice pattern was 20 mm, and the width D of the convex portions was 10 μm.

Next, as shown in FIG. 8C, the Cr layer 42 was etched by dry etching using an ICP dry etching apparatus, and a Cr pattern 45 was obtained. At this time, the etching conditions for the Cr layer 42 were Cl2 flow rate 40 sccm, O2 flow rate 10 sccm, He flow rate 80 sccm, pressure 30 Pa, ICP power 120 W, and RIE power 50 W.
Next, the resist pattern 44 was peeled off by O 2 plasma ashing (conditions: O 2 flow rate 500 sccm, pressure 30 Pa, RIE power 1000 W).

  Next, as shown in FIG. 8D, the quartz substrate 41 was etched by dry etching using an ICP dry etching apparatus. At this time, the etching conditions of the quartz substrate 41 were C4F8 flow rate 10 sccm, O2 flow rate 10 to 25 sccm, Ar flow rate 75 sccm, pressure 2 Pa, ICP power 20 W, and RIE power 550 W. At this time, the pattern depth C was 250 nm.

Next, as shown in FIG. 8E, after the remaining Cr pattern 45 was wet cleaned, a mold release treatment was performed using a fluorine-based mold release agent.
From the above, the residual resin curing mold 30 was obtained (FIGS. 8E and 9).

Next, using a pattern transfer mold, photoimprinting was performed on the resin on the substrate by the step-and-repeat method.
First, a silicon wafer was used as the base material 11. A photocurable resin PAK-01 (manufactured by Toyo Gosei Kogyo Co., Ltd.) was coated on the silicon wafer 11 to a thickness of 250 nm to form a transferred resin layer 12 (FIG. 5A).

Next, the pattern transfer mold 20 was pressed against the transferred resin layer 12 on the silicon wafer 11 so that the surface of the pattern transfer mold 20 on which the pattern 201 was formed was opposed (FIG. 5B, FIG. 10). (B)).
Next, from the back side of the pattern transfer mold 20, exposure to 20 mJ / cm 2 was performed using a high-pressure mercury lamp as a light source to cure the transferred resin layer 12 (FIG. 5C).

Next, the pattern transfer mold 20 was peeled from the silicon wafer 11 to obtain a pattern 13 made of a cured resin in a 20 mm × 20 mm square region on the silicon wafer 11 (FIGS. 5D and 10D). )).
Next, the pattern transfer mold 20 is pressed so that the surface of the pattern transfer mold 20 on which the pattern 201 is formed faces the transfer resin layer 12 in the area adjacent to the area where the transfer resin layer is cured (see FIG. 5 (e) and FIG. 10 (e)), after the resin layer 12 to be transferred is cured by irradiating UV light (FIG. 5 (f)), the pattern transfer mold 20 is peeled from the silicon wafer 11, A pattern 13 made of a cured resin was obtained (FIG. 10 (f)).
The transfer process described above was performed a total of 12 times to obtain a pattern 13 made of a resin cured on the silicon wafer 11 as shown in FIGS. 5 (i) and 10 (i).

Next, optical imprinting was performed using the residual resin curing mold 30 shown in FIG. 9 to cure the uncured resin 14 on the substrate 11.
First, the uncured resin 14 on the silicon wafer 11 on which the pattern 13 is formed is aligned so that the convex portions 302 of the lattice pattern 301 formed on the residual resin cured mold 30 face each other, and the convex portions 302 are aligned. The uncured resin 14 was pressed to level the uncured resin 14 (FIG. 5 (k)).

  Next, from the back side of the residual resin curing mold 30, the uncured resin 14 was cured by performing exposure at 20 mJ / cm 2 using a high-pressure mercury lamp as a light source (FIG. 5L). Next, the residual resin curing mold 30 was peeled from the silicon wafer 11 (FIGS. 5 (m) and 10 (m)).

  As described above, 12 chips of the pattern 201 formed on the pattern transfer mold 20 are transferred onto the silicon wafer 11, and the transferred resin layer 12 made of the photocurable resin coated on the entire surface of the silicon wafer 11 can be reliably cured. did it.

Next, as shown in FIG. 11A, the remaining film 15 was removed by O 2 plasma ashing. At this time, the O2 plasma ashing conditions were an O2 flow rate of 50 sccm, a pressure of 30 Pa, and an RIE power of 100 W.
Next, as shown in FIG. 11B, the silicon wafer 11 was etched using the resin pattern 13 as an etching mask. At this time, the etching conditions of the silicon wafer 11 were CF4 flow rate 30 sccm, C4F8 flow rate 20 sccm, pressure 30 Pa, ICP power 500 W, and RIE power 50 W.

Next, as shown in FIG. 11C, the remaining resin pattern 13 was removed by O 2 plasma ashing (conditions: O 2 flow rate 50 sccm, pressure 30 Pa, RIE power 100 W).
From the above, a silicon wafer 17 having a pattern 16 formed on a large area could be obtained.

The pattern forming method of the present invention is expected to be used in a wide range of fields where a fine pattern is required. For example, imprint molds, photomasks, semiconductor devices, optical elements, wiring circuits (dual damascene wiring circuits, etc.), recording devices (hard disks, DVDs, etc.), medical testing chips (DNA analysis applications) Etc.), displays (diffusion plates, light guide plates, etc.), microchannels, etc. are expected.
The transferred resin layer 12 used in the present invention is not limited to a photocurable resin, and a thermosetting resin can also be used.

10 ... Mold 11 ... Base material (silicon wafer)
DESCRIPTION OF SYMBOLS 12 ... Transferred resin layer 13 ... Cured resin pattern 14 ... Uncured resin 15 ... Residual film 16 ... Pattern 17 ... Silicon wafer in which pattern was formed 20 ... Pattern transfer mold 201 ... Concave / convex pattern 30 ... Residual resin cured mold 301 ... Lattice pattern 302 ... convex portion of lattice pattern 303 ... concave portion of lattice pattern 41 ... quartz substrate 42 ... Cr layer 43 ... resist film 44 ... resist pattern 45 ... Cr pattern 46 ... quartz substrate on which the pattern is formed

Claims (9)

A pattern transfer mold for transferring a pattern consisting of irregularities to a transferred resin layer applied on the surface of the substrate;
A residual resin-curing mold for flattening and curing a plurality of portions of the plurality of transferred resin layers that protrude to the outer periphery of the pattern transfer mold after a plurality of times of pattern transfer by the pattern transfer mold; and
A mold for imprinting, comprising: The residual resin curing mold includes a plurality of recesses arranged in a two-dimensional direction for accommodating each pattern transferred to the transfer resin layer for each pattern, and the plurality of residual transfer resins surrounding the plurality of recesses. It has a pattern consisting of convex parts facing the layer part,
The plan view shape of the recess matches the plan view shape of the pattern transfer mold outer shape,
The imprint mold according to claim 1. The pattern transfer mold has a square shape in plan view,
The residual resin curing mold includes a plurality of recesses arranged in a two-dimensional direction for accommodating each pattern transferred to the transfer resin layer for each pattern, and the plurality of residual transfer resins surrounding the plurality of recesses. It has a lattice pattern consisting of convex portions facing the layer portions,
The pitch of the adjacent recesses is equal to the length of one side of the pattern transfer mold,
The imprint mold according to claim 1, wherein the mold is an imprint mold. The pattern transfer mold has a rectangular shape in plan view,
The residual resin curing mold includes a plurality of recesses arranged in a two-dimensional direction for accommodating each pattern transferred to the transfer resin layer for each pattern, and the plurality of residual transfer resins surrounding the plurality of recesses. It has a lattice pattern consisting of convex portions facing the layer portions,
The vertical and horizontal pitches of the adjacent concave portions are equal to the length of one side in the vertical and horizontal directions of the pattern transfer mold, respectively.
The imprint mold according to claim 1, wherein the mold is an imprint mold.   5. The imprint mold according to claim 2, wherein a depth of the concave portion constituting the residual resin curing mold is larger than a height of the pattern so as not to interfere with the pattern. . A resin application step of applying a transfer resin layer on the upper surface of the substrate;
A pattern transfer step of transferring a pattern of irregularities to the resin layer to be transferred a plurality of times by a pattern transfer mold and forming the pattern at a constant interval in a two-dimensional direction;
After the pattern transfer step, a residual resin curing step of flattening and curing the portions of the plurality of transferred resin layers that protrude to the outer periphery of the pattern transfer mold in a lump by a residual resin curing mold;
An imprint method comprising the steps of:   The imprint method according to claim 6, wherein the transferred resin layer is made of a thermosetting resin or a photocurable resin.   The imprint method according to claim 6 or 7, wherein the transferred resin layer is made of a photocurable resin, and the pattern transfer mold and the residual resin cured mold are made of a light transmissive material.   A pattern molded body produced by using the imprint method according to any one of claims 6 to 8.

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