JP2008201020A - Imprint mold, method for producing imprint mold, and optical imprint method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an imprint mold which is superior in releasability between the impprint mold and a transfer pattern and can carry out an optical imprint method without degrading the releasability even when the imprint method is carried out repeatedly. <P>SOLUTION: The imprint mold has a phase displacement layer. When it is irradiated with coherent exposure light, exposure light intensity can be controlled by changing the thickness and refractive index of the phase displacement layer. By controlling the exposure light intensity, the degree of curing of a photocurable resin in a specified part can be reduced selectively, and shearing force caused by adhesion and shrinkage stress by curing can be reduced. In the process of peeling the imprint mold and the resin pattern, a part wherein the defect of the resin pattern occurs can selectively be made to be uncured, so that the occurrence of the defect of the transfer pattern can be made possible. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an imprint mold, an imprint mold manufacturing method, and an optical imprint method using the imprint mold.

In recent years, it has been proposed to use an imprint method for forming a fine pattern in a manufacturing process of a semiconductor device, a display, a recording medium, a biochip, an optical device, or the like (see Non-Patent Document 1 and Non-Patent Document 2). .
In the imprint method, a nanometer-level method is particularly referred to as a nanoimprint method. Hereinafter, the imprint method is also simply referred to as a nanoimprint method.

  In the imprint method, a mold called an imprint mold (sometimes referred to as a template) in which a pattern corresponding to a negative / positive reversal image of a pattern to be finally transferred is formed on a resin, and the resin is in that state. The pattern is transferred by curing. At this time, a photoimprint method is known in which a photocurable resin is cured by irradiating exposure light (see Patent Document 1).

  In the imprint method, the peelability between the imprint mold and the resin pattern generated on the substrate is extremely important. In general, the curing of the resin causes a resin shrinkage and generates a stress between the imprint mold and the resin pattern. For this reason, after the resin is cured (FIG. 1 (a)), in the step of separating the imprint mold and the resin pattern, the resin moves to the imprint mold side (FIG. 1 (b)), and a part of the pattern is It is known that the resin pattern remains on the imprint mold side (FIG. 1C) and the resin pattern has a defect.

  At this time, it has been reported that the defect of the resin pattern in peeling frequently occurs at the corner part which is the boundary between the convex pattern part and the concave pattern part of the concave / convex pattern where stress is concentrated at the time of peeling (FIG. 1D). (See Non-Patent Document 3).

  Further, as a method for improving the peelability, a method has been proposed in which a fluoropolymer having a small surface energy is applied to the imprint mold surface as a release agent (see Patent Document 2).

  On the other hand, in the field of photolithography, an exposure method has been proposed in which exposure intensity is controlled by using coherent exposure light and a photomask whose optical path difference is controlled (see Patent Document 3).

In addition, as a photomask whose optical path difference is controlled as described above, a photomask having a phase displacement layer made of a material mainly composed of a metal such as molybdenum, tungsten, or tantalum, silicon, oxygen, and / or nitrogen is proposed. (See Patent Document 4).
JP 2000-194142 A JP 2002-283354 A JP-A-4-359254 JP 2006-48033 A Appl. phys. Lett. , Vol. 67, p3314 (1995) Nanoimprint Technology Thorough Diffraction Electric Journal Published November 22, 2004, p20-38 Y. Hirai, et al. J. et al. Vac. Sci. Technol. B21 (6), 2003

  However, even if the release agent is applied to the surface, if the release agent is repeatedly subjected to the imprint method, the release agent is gradually peeled off from the surface of the imprint mold, and the peelability between the imprint mold and the resin is lowered.

  Therefore, the present invention has been made to solve the above-described problems, and is excellent in the releasability between the imprint mold and the resin pattern, and the light imprint that does not deteriorate the releasability even when repeated imprinting is performed. An object is to provide an imprint mold capable of performing a printing method.

  The present invention according to claim 1 is an imprint mold for use in a photoimprint method in which a transfer substrate and an imprint mold are joined and a photocurable resin is cured by exposure light, the imprint mold and the transfer substrate. An imprint mold comprising a phase displacement layer having a refractive index different from the refractive index of the material used for the imprint mold, between the contact surface with the exposure light source that emits coherent exposure light It is.

  The present invention according to claim 2 is the imprint mold according to claim 1, wherein a fine uneven pattern is formed on the substrate, and the substrate surface opposite to the substrate surface on which the uneven pattern is formed is formed. The imprint mold is characterized in that at least one phase displacement layer is laminated, and the phase displacement layer is patterned so as to face the concavo-convex pattern.

  A third aspect of the present invention is the imprint mold according to the first or second aspect, wherein the phase displacement layer is selected from the group consisting of molybdenum, tungsten, tantalum, silicon, oxygen, and nitrogen. An imprint mold characterized by being a material containing at least one element.

  The present invention described in claim 4 is the imprint mold according to any one of claims 1 to 3, wherein the phase displacement layer is patterned so as to be opposed to the convex pattern portion of the concavo-convex pattern, and the phase displacement The imprint is characterized in that the layer is a phase displacement layer having a transmittance with respect to the exposure light to such an extent that the exposure light that has passed through the phase displacement layer does not have a light intensity necessary for curing the photocurable resin. It is a mold.

  The present invention according to claim 5 is a method of manufacturing an imprint mold used in an optical imprint method, wherein a step of forming a concavo-convex pattern on a substrate and a substrate opposite to the substrate surface on which the concavo-convex pattern is formed An imprint mold manufacturing method comprising: laminating a phase displacement layer on a surface; and patterning the phase displacement layer so as to face the uneven pattern.

  According to a sixth aspect of the present invention, in the photoimprint method in which the resin is cured by exposure light, the exposure light is coherent light, and an imprint mold having a phase displacement layer is prepared. A step of applying a photocurable resin; a step of bonding the imprint mold and the transfer substrate; and irradiating the transfer substrate with exposure light from the imprint mold side; and the imprint mold and the transfer substrate. And a step of developing the photo-curable resin irradiated with exposure light.

  The imprint mold of the present invention includes a phase displacement layer. Thereby, when the coherent exposure light is irradiated, the exposure intensity can be controlled by changing the thickness and refractive index of the phase shift layer. At this time, by controlling the exposure intensity, it is possible to selectively reduce the degree of curing of the photo-curing resin at a specific site, and to reduce the shearing force due to fixing due to curing or shrinkage stress. Therefore, in the step of peeling the imprint mold from the resin pattern, the portion where the defect of the resin pattern occurs can be selectively uncured, and the occurrence of the defect of the transfer pattern can be suppressed.

Hereinafter, the imprint mold of the present invention will be described.
The imprint mold of the present invention is a contact surface between the imprint mold and the transfer substrate,
Between the exposure light source that emits coherent exposure light,
A phase shift layer having a refractive index different from that of the material used for the imprint mold is provided.

  By having a phase displacement layer having a refractive index different from the refractive index of the material used for the imprint mold, between the contact surface between the imprint mold and the transfer substrate and the exposure light source that emits coherent exposure light. The degree of curing of the resin on the transfer substrate can be controlled by the phase shift layer portion, thickness, refractive index, and the like. For this reason, in the process of peeling the imprint mold and the resin pattern, the portion where the defect of the resin pattern occurs can be selectively uncured, and the occurrence of the defect of the transfer pattern can be suppressed.

In the imprint mold of the present invention, a fine concavo-convex pattern is formed on a substrate, and at least one phase displacement layer is laminated on the substrate surface opposite to the substrate surface on which the concavo-convex pattern is formed, and the phase displacement The layer is preferably patterned so as to face the concavo-convex pattern. Unpatterned resin at the part corresponding to the corner part that is the boundary between the convex pattern part and the concave pattern part, which is known to frequently generate defects, by being patterned to face the concave / convex pattern It can be. For this reason, the defect of the corner part which is a boundary of a convex pattern part and a concave pattern part can be suppressed.
At this time, the phase displacement layer may be disposed so as to face either the concave pattern portion of the concave / convex pattern or the convex pattern portion of the concave / convex pattern. FIG. 3 shows an example of the imprint mold of the present invention in the case where the phase displacement layer is selectively disposed on the convex pattern portion of the concave / convex pattern.

  The phase displacement layer is required to be different from the refractive index of the material used for the imprint mold, and can be appropriately selected according to the coherent exposure light used in the optical imprint method.

  At this time, the phase displacement layer is preferably a material containing at least one element selected from the group consisting of molybdenum, tungsten, tantalum, silicon, oxygen, and nitrogen. By using the material, it is possible to preferably control the film thickness, the refractive index, and the like.

  Hereinafter, how the phase displacement layer acts on coherent exposure light will be described.

FIG. 2 is a diagram in which the imprint mold is irradiated with coherent exposure light.
The wavefront A of the coherent light 200 incident on the mold 100 in FIG. 2A passes through the distance A and the distance B between the uneven portions of the mold 100 indicated by 410 and 420 parts, respectively. If the difference distance C between the cross-sectional dimension (distance A) of the convex pattern part and the cross-sectional dimension (distance B) of the concave pattern part is set to an optical path length corresponding to a half wavelength of the coherent exposure light or an odd multiple of the half wavelength, the wavefront B is emitted as light that is phase-inverted relative to each other at adjacent 410 and 420.

  The light intensity will be described with reference to FIGS. In the light transmitted through 410 and 420, the light intensity is the same (here, for convenience of explanation, the transmittance attenuation of the mold 100 itself is ignored). Since the phase is inverted, the light amplitudes (intensities) of 410 and 420 on the wavefront B are separated for convenience, and the vertical axis is relatively opposed to the top and bottom of the drawing. At this time, due to the diffraction effect by the corners C and D, a tail-like diffracted light 430 is generated. In the diffracted light 430, the light intensity is the same, and in the combined light intensity 440 shown in FIG. 2C, the light energy intensity at the corner C is close to zero because they are canceled by the inverted phase. This zero light energy portion occurs selectively at the wavefront B position where phase inversion occurs. For this reason, only the corner portion (corner portion C) which is the boundary between the convex pattern portion and the concave pattern portion of the resin pattern where stress is concentrated at the time of peeling occurs selectively, and a portion where the photocurable resin 120 is not cured is generated. Adhesive force or frictional force due to shrinkage or expansion of the photocured resin in the mold does not act.

The distance C necessary for the phase inversion shown in FIG. 2 will be described. As described above, the phase inversion mechanism may be an odd multiple of one half of the wavelength (λ) or one half of the wavelength (λ) in the optical path length. When the wavelength of the light source is λ (nm), the refractive index of the imprint mold material is n _q , the difference between the cross-sectional dimension of the convex pattern part and the cross-sectional dimension of the concave pattern part is T, and the refractive index of the atmosphere is n _air Is represented by "Equation 1".

  The imprint mold of the present invention includes a phase displacement layer. Therefore, by controlling the thickness and refractive index of the phase shift layer regardless of the size of the concavo-convex pattern, the optical path difference with respect to the exposure light between the cross section of the convex pattern portion and the cross section of the concave pattern portion is a coherent exposure. This can correspond to a half wavelength of light or an odd multiple of a half wavelength. Therefore, even when a concavo-convex pattern having an arbitrary dimension is formed, the optical path difference can be controlled by controlling the thickness and refractive index of the phase shift layer.

FIG. 3 shows an example of the imprint mold of the present invention.
In FIG. 3, the dimension of the concavo-convex pattern is t ₁ and the thickness of the phase displacement layer is t ₂ .
In the case of FIG. 3, in Equation 1, T corresponds to being divided into two, and T and n are divided into different t ₁ , t ₂ , n _r , and n ₂ . Further, when the refractive index of the light propagation medium that causes phase inversion is at the wavefront A, it is generally in the atmosphere (refractive index n _air = 1), and at the wavefront B, it is in the photocurable resin (refractive index n _r ). .

From the above, the relational expression is derived.
First, Equation 1 is transformed into Equation 2.
In the case of the imprint mold of the present invention, the distance T and the refractive index n are divided into t ₁ , t ₂ , n _r and n ₂ , respectively.
In the relationship satisfying the above-mentioned “Equation 3”, the phase of the exposure light is inverted by 180 ° at the boundary between the convex pattern portion and the concave pattern portion.

As a specific example, for example, the film thickness t of the phase displacement layer 90 (n ₂ ) necessary for a mold having a concavo-convex pattern of 100 nm on an imprint mold 100 (t ₁ , n _q ) made of quartz glass under the following conditions: ₂ is 77.7 nm from “Equation 3”.
λ: 193 nm (wavelength of ArF excimer laser)
n _q : 1.5 (refractive index of the quartz glass substrate 10)
t ₁ : 100 nm (dimension pattern dimension)
n ₂ : 2.5 (refractive index of the phase change layer 90)
_nr : 1.7 (refractive index of photocuring resin)
n _air : 1 (atmospheric refractive index)

  FIG. 4 shows the light intensity distribution in the case shown in FIG. The combined light intensity transmitted through the mold 100 has the distribution shown in FIG. 4B at the wavefront B position, and the corner portion which is the boundary between the convex pattern portion and the concave pattern portion of the resin pattern where stress is concentrated at the time of peeling is zero light energy. Corresponds to the part corresponding to the part. For this reason, in the exposure process, the corner portion which is the boundary between the convex pattern portion and the concave pattern portion of the resin pattern where stress is concentrated at the time of peeling becomes an uncured portion, and the generation of stress due to resin shrinkage can be reduced. .

  At this time, the phase displacement layer is preferably a phase displacement layer having a transmittance with respect to the exposure light such that the exposure light that has passed through the phase displacement layer does not have the light intensity necessary for curing the photocurable resin. . The above case will be described with reference to FIG.

  When the transmittance of the phase shift layer is reduced, the combined light intensity transmitted through the mold 100 has the distribution shown in FIG. 5B, and the light intensity transmitted through 410 parts is reduced compared to 420. At this time, by using a photo-curing resin having a sensitivity that is cured by the light intensity of the exposure light transmitted through 420 parts and not cured by the light intensity of the exposure light transmitted through 410 parts, the light of the part transmitted through the phase displacement layer is used. The curable resin can not be selectively cured. By patterning the phase displacement layer so as to be opposed to the convex pattern portion of the concavo-convex pattern, the uncured portion becomes a portion of the remaining film that is not necessary for the desired transfer pattern. For this reason, in the process of developing the photocurable resin irradiated with the exposure light of the photoimprint method, when removing the uncured photocurable resin, processing of the remaining film unnecessary for the transfer pattern should be performed at the same time. I can do it.

Hereinafter, the imprint mold manufacturing method of the present invention will be described.
The imprint mold manufacturing method of the present invention includes:
Forming an uneven pattern on the substrate;
Laminating a phase shift layer on the substrate surface opposite to the substrate surface on which the concave / convex pattern is formed;
And patterning the phase displacement layer so as to face the concavo-convex pattern.

<Process for forming concave / convex pattern on substrate>
First, an uneven pattern is formed on the substrate.

  The substrate is required to be a material that transmits exposure light used in the photoimprint method. Examples of a material that transmits general exposure light include quartz glass.

  As a method of forming the concavo-convex pattern, it may be formed using a known fine processing technique as appropriate according to the desired size and shape of the concavo-convex pattern. For example, it may be formed by appropriately combining a photolithography method, a dry etching method, a wet etching method, a laser processing method, a micromachining method, and the like.

<Step of laminating phase shift layer>
Next, a phase displacement layer is laminated on the substrate surface opposite to the substrate surface on which the concavo-convex pattern is formed.

  The phase shift layer is required to be different from the refractive index of the material used for the imprint mold, and can be appropriately selected according to the wavelength of coherent exposure light used for the optical imprint method. Further, a plurality of layers may be laminated according to the optical path difference necessary for phase inversion.

At this time, the phase displacement layer is made of a material containing at least one element selected from the group consisting of molybdenum, tungsten, tantalum, silicon, oxygen, and nitrogen (for example, molybdenum oxynitride silicide (MoSiO _x N _y )). It is preferable that By using the material, it is possible to preferably control the film thickness, the refractive index, and the like.

  As a method of laminating the phase shift layer, a known thin film forming method may be used as appropriate. For example, you may form using PVD method, CVD method, spin coat method, slit coat method, spray coat method, dip coat method, etc.

<Step of patterning phase shift layer>
Next, the phase displacement layer is patterned so as to face the uneven pattern.

As the step of patterning the phase shift layer, a known patterning method can be used as appropriate. For example, the pattern may be formed using a lithography technique, an etching technique, or the like.
At this time, it is preferable to perform the step of aligning the front and back of the substrate before the step of patterning the phase displacement layer for alignment with the uneven pattern.

  As mentioned above, the imprint mold manufacturing method of this invention can be implemented.

Hereinafter, the optical imprint method of the present invention will be described.
The optical imprint method of the present invention comprises:
The exposure light is coherent light,
Preparing an imprint mold provided with a phase displacement layer;
Applying a photocurable resin to the transfer substrate;
Bonding the imprint mold and the transfer substrate, and irradiating the transfer substrate with exposure light from the imprint mold side;
Peeling the imprint mold and the transfer substrate;
Developing the photocurable resin irradiated with the exposure light; and
It is provided with.

  The imprint method of the present invention is characterized in that the exposure light is coherent light and an imprint mold having a phase displacement layer is used. The exposure light that has passed through the phase displacement layer and the exposure light that has not passed through the phase displacement layer have different phases, and the light intensity of the exposure light is close to zero on a surface that is 180 ° different in phase. For this reason, the exposure intensity can be controlled by the phase displacement layer, and the degree of curing of the photocurable resin at a specific portion can be selectively lowered. Therefore, it is possible to reduce the shearing force due to the fixing and shrinkage stress due to the curing of the resin, and it is possible to suppress the occurrence of defects in the transfer pattern.

  In addition, an imprint mold in which at least one phase displacement layer is laminated on the substrate surface opposite to the substrate surface on which the uneven pattern is formed, and the phase displacement layer is patterned to face the uneven pattern. By using, the corner portion that is the boundary between the convex pattern portion and the concave pattern portion of the concavo-convex pattern can be set as an uncured portion. Therefore, in the step of developing the photocurable resin irradiated with exposure light, the edge of the corner portion that is the boundary between the convex pattern portion and the concave pattern portion is sharpened in order to remove the uncured photocurable resin. And the uneven pattern can be transferred with high accuracy.

  Further, the phase displacement layer is patterned so as to face the convex pattern portion of the concavo-convex pattern, and the phase displacement layer does not have the light intensity required for the exposure light that has passed through the phase displacement layer to cure the photocurable resin. By using an imprint mold that is a phase displacement layer having a transmittance with respect to the exposure light, the portion of the remaining film unnecessary for the transfer pattern can be uncured. For this reason, in the step of developing the photocurable resin irradiated with the exposure light, the uncured photocurable resin is removed, so that it is possible to remove the unnecessary film from the transfer pattern and process it. .

<Example 1>
Hereinafter, an example of implementation of the imprint mold manufacturing method of this invention is shown. As a matter of course, the imprint mold manufacturing method of the present invention is not limited to the following examples, and may be other manufacturing methods that can be inferred in each step.

  First, a sacrificial film 20 made of chromium (Cr), which is a conductive metal, was formed on a quartz glass substrate 10 serving as a mold material by a sputtering method (FIG. 6A).

  Next, an electron beam reaction type resist 30 was applied to the sacrificial film 20, and a resist pattern 40 was formed on the sacrificial film 20 by lithography exposure and development (FIG. 6B).

  Next, using the resist pattern 40 as a mask, a mask pattern 50 was formed on the sacrificial film 20 by a dry etching method using a reactive etching (RIE) method using a mixed gas of chlorine and oxygen (FIG. 6C).

Next, the concavo-convex pattern 60 (the concavo-convex pattern dimension (t ₁ ): 100 nm) was formed on the quartz glass substrate 10 by a dry etching method using a reactive etching (RIE) method using a C ₂ F ₆ and oxygen mixed gas (FIG. 6). (D)).

Next, the resist pattern 40 is removed by ashing by oxygen plasma treatment, and a light transmissive material 70 (refractive index (n ₂ )) is formed on the substrate surface opposite to the substrate surface on which the concavo-convex pattern is formed using the CVD method. : 2.5) was formed (FIG. 6E).

Next, an electron beam reaction type resist 30 was applied to the light transmitting material 70, and a resist pattern 80 was formed on the light transmitting material 70 by exposure and development processes using a lithography method (FIG. 6F).
At this time, the alignment of the front and back of the substrate was performed based on the mask pattern 50.

Next, the light transmissive material 70 is etched by a dry etching method using a corrosive gas with the resist pattern 80 as a mask, so that the phase displacement layer 90 (film thickness (t ₂ ): 77.7 nm) corresponding to the concavo-convex pattern 60 is obtained. Then, the resist pattern 80 and the mask pattern 50 were removed by ashing by oxygen plasma treatment (FIG. 6G).
From the above, the mold 100 which is an example of the imprint mold of the present invention could be manufactured.

<Example 2>
Hereinafter, an example of the implementation of the optical imprinting method of the present invention will be specifically described with reference to FIG. Naturally, the optical imprinting method of the present invention is not limited to the following examples, and may be other optical imprinting methods that can be inferred in each step.

  First, the transfer substrate 110 was arranged at a position opposed to the mold 100 manufactured in Example 1 at a predetermined interval, and the photocurable resin 120 was applied on the transfer substrate 110 (FIG. 7A).

  Next, the mold 100 is bonded to the transfer substrate 110 coated with the photocurable resin 120 in the atmosphere, and irradiated with coherent light 200 (ArF excimer laser) having a predetermined wavelength for resin curing, and the photocurable resin 120 is applied. It hardened | cured (FIG.7 (d)).

  Next, the mold 100 and the transfer substrate 110 were pulled back in the direction opposite to the bonding direction, and a transfer pattern 130 made of a photocurable resin 120 was obtained on the transfer substrate 110 (FIG. 7C).

Next, the uncured portion 140 was dissolved and removed by a development process (FIG. 7D).
At this time, the remaining film 150 unnecessary for the desired transfer pattern was also removed (FIG. 7E).
From the above, the transfer pattern 130 could be formed on the transfer substrate.

  The imprint mold of the present invention is expected to be used in a wide range of fields where fine pattern formation is desired. For example, semiconductor devices, optical components such as optical waveguides and diffraction gratings, recording devices such as hard disks and DVDs, life It is expected to be used in the manufacturing process of products such as biochips used for DNA analysis and the like in the science field, diffusion plates and light guide plates used for image / video displays in the display field and the like.

It is a figure which shows generation | occurrence | production of a defect in the peeling process of an imprint mold. It is a figure which shows the light intensity at the time of irradiating coherent exposure light to an imprint mold. It is a figure which shows an example of the imprint mold of this invention. It is a figure which shows the light intensity at the time of irradiating coherent exposure light to the imprint mold of this invention. It is a figure which shows the light intensity at the time of irradiating coherent exposure light to the imprint mold of this invention. It is a figure which shows an example of implementation of the imprint mold manufacturing method of this invention. It is a figure which shows an example of implementation of the optical imprint method of this invention.

Explanation of symbols

10 Quartz glass substrate
20 Sacrificial film
30 resists
40 resist pattern
50 mask patterns
60 Uneven pattern
70 Light transmission material
80 resist pattern
90 Phase displacement layer
100 mold
110 Transfer substrate
120 photocurable resin
130 Transfer pattern
140 Uncured part
150 Residual film
160 Transfer mold
200 coherent light
410 Distance A part
420 Distance B part
430 Diffracted light
440 Synthetic light intensity

Claims (6)

An imprint mold for use in a photoimprint method in which a transfer substrate and an imprint mold are bonded and a photocurable resin is cured by exposure light,
A phase displacement layer having a refractive index different from the refractive index of the material used for the imprint mold is provided between the contact surface between the imprint mold and the transfer substrate and the exposure light source that emits coherent exposure light. Characteristic imprint mold. The imprint mold according to claim 1,
A fine uneven pattern is formed on the substrate,
Laminating at least one phase displacement layer on the substrate surface opposite to the substrate surface on which the uneven pattern is formed,
The imprint mold, wherein the phase displacement layer is patterned so as to face the uneven pattern. The imprint mold according to claim 1, wherein
The imprint mold, wherein the phase displacement layer is a material containing at least one element selected from the group consisting of molybdenum, tungsten, tantalum, silicon, oxygen, and nitrogen. The imprint mold according to any one of claims 1 to 3,
The phase displacement layer is patterned so as to face the convex pattern portion of the concave / convex pattern,
The phase displacement layer is a phase displacement layer having a transmittance with respect to exposure light such that the exposure light that has passed through the phase displacement layer does not have a light intensity necessary for curing the photocurable resin. Imprint mold. A method for producing an imprint mold used in an optical imprint method,
Forming an uneven pattern on the substrate;
Laminating a phase shift layer on the substrate surface opposite to the substrate surface on which the concave / convex pattern is formed;
And a step of patterning the phase displacement layer so as to be opposed to the concave-convex pattern. In the photoimprint method of curing the resin with exposure light,
The exposure light is coherent light,
Preparing an imprint mold provided with a phase displacement layer;
Applying a photocurable resin to the transfer substrate;
Bonding the imprint mold and the transfer substrate, and irradiating the transfer substrate with exposure light from the imprint mold side;
Peeling the imprint mold and the transfer substrate;
Developing the photocurable resin irradiated with exposure light; and
An optical imprint method characterized by comprising: