TWI612884B - 電磁波屏蔽用金屬箔、電磁波屏蔽材、及屏蔽電纜 - Google Patents
電磁波屏蔽用金屬箔、電磁波屏蔽材、及屏蔽電纜 Download PDFInfo
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- TWI612884B TWI612884B TW103122811A TW103122811A TWI612884B TW I612884 B TWI612884 B TW I612884B TW 103122811 A TW103122811 A TW 103122811A TW 103122811 A TW103122811 A TW 103122811A TW I612884 B TWI612884 B TW I612884B
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- electromagnetic wave
- wave shielding
- layer
- alloy layer
- metal foil
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- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
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- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/013—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/013—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium
- B32B15/015—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium the said other metal being copper or nickel or an alloy thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/017—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of aluminium or an aluminium alloy, another layer being formed of an alloy based on a non ferrous metal other than aluminium
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
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- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
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Abstract
提供一種耐蝕性較以往之鍍Sn優異的電磁波屏蔽用金屬箔、電磁波屏蔽材及屏蔽電纜。
一種電磁波屏蔽用金屬箔,在由超過厚度4μm之金屬箔構成之基材的一面或兩面,形成有由A元素與B元素群構成的合金層2,其中該A元素係由Sn或In構成,該B元素群係選自Ag、Ni、Fe及Co之群中的1種以上,並在合金層與基材之間,形成有由B元素群構成之基底層3,A元素之附著量為10~300μmol/dm2,且B元素群之總附著量為40~900μmol/dm2。
Description
本發明係關於一種將樹脂層或樹脂膜積層而使用於電磁波屏蔽材之金屬箔、電磁波屏蔽材及屏蔽電纜。
鍍Sn被膜具有下述特徵:耐蝕性優異,且可焊性良好,接觸電阻低。因此,例如會在銅等之金屬箔鍍Sn來使用作為車載電磁波屏蔽材之複合材料。
上述複合材料之構造,係將樹脂層或膜積層在由銅或銅合金箔構成之基材的其中一面,並將鍍Sn被膜形成在另一面(參照專利文獻1)。
又,作為電漿顯示器用之電磁波屏蔽體,具有下述技術之報告:於透明基材上形成銅箔之電路,對銅箔之顯示畫面側之面,實施由錫、鎳及鉬構成之合金鍍敷,藉此降低反射率(參照專利文獻2)。
專利文獻1:國際公開WO2009/144973號
專利文獻2:日本特開2003-201597號公報
然而,對於在以汽車用途為代表之戶外環境使用的電磁波屏蔽材,係要求嚴格之耐蝕性,並且亦需具有對NOx或SOx等腐蝕氣體之抗性。又,假定於機房等之高溫環境中使用,對於電磁波屏蔽材亦要求耐熱
性。
本發明係為了解決上述課題而完成者,目的在於提供一種相較於以往之鍍Sn,耐蝕性、耐熱性優異之電磁波屏蔽用金屬箔、電磁波屏蔽材、及屏蔽電纜。
本發明人等經各種研究之結果,藉由將由既定元素構成之合金層形成在金屬箔表面,相較於以往之鍍Sn,成功地提升了耐蝕性、耐熱性。
為了達成上述之目的,本發明之電磁波屏蔽用金屬箔,在由超過厚度4μm之金屬箔構成之基材的一面或兩面,形成有由A元素與B元素群構成的合金層,其中該A元素係由Sn或In構成,該B元素群係選自Ag、Ni、Fe及Co之群中的1種以上,並在該合金層與該基材之間,形成有由該B元素群構成之基底層,該A元素之附著量為10~300μmol/dm2,且該B元素群之總附著量為40~900μmol/dm2。
該合金層較佳為金屬間化合物。
該合金層較佳進一步含有選自P、W、Fe、及Co之群中1種以上的C元素群。
相對於該合金層整體,該C元素群之合計含有率較佳為40wt%以下。
該合金層所含之Cu、Al及Zn合計含有率較佳為10wt%以下。
於該合金層之表面,較佳形成有氧化物。
該基材較佳由金、銀、白金、不銹鋼、鐵、鎳,鋅、銅、銅合金、鋁、或鋁合金構成。
較佳為該基材為鋁或鋁合金,在該基材與該基底層之間形成有Zn層。
本發明之電磁波屏蔽材,係在該電磁波屏蔽用金屬箔之一面,積層有樹脂層。
該樹脂層較佳為樹脂膜。
本發明之屏蔽電纜,受到該電磁波屏蔽材屏蔽。
根據本發明,相較於以往之鍍Sn,可得到耐蝕性優異之電磁波屏蔽用金屬箔、電磁波屏蔽材、及屏蔽電纜。
1‧‧‧金屬箔
2‧‧‧合金層
3‧‧‧基底層
4‧‧‧樹脂層或樹脂膜
10‧‧‧電磁波屏蔽用金屬箔
21‧‧‧第1鍍敷層
22‧‧‧第2鍍敷層
100‧‧‧電磁波屏蔽材
圖1:係顯示本發明第1實施形態之電磁波屏蔽用金屬箔的剖面圖。
圖2:係顯示本發明實施形態之電磁波屏蔽材的剖面圖。
圖3:係顯示實施例4之試樣利用STEM所得的剖面影像之圖。
圖4:係顯示實施例4之試樣利用STEM所得的線分析結果之圖。
以下,說明本發明之實施形態。另,於本發明中,「%」只要沒有特別說明,係指質量%。
如圖1(b)所示,本發明第1實施形態之電磁波屏蔽用金屬箔10,具有由金屬箔構成之基材1、形成在基材1之一面的合金層2、及形成在基材1與合金層2之間的基底層3。
(基材)
基材1,只要是可發揮電磁波屏蔽效果之導電性高的金屬,則任何種類皆可。作為基材1,可舉出有金、銀、白金、不銹鋼、鐵、鎳、鋅、銅、銅合金、鋁、或鋁合金等之箔,但一般為銅箔或鋁箔。
基材1之形成方法並無特別限定,例如可進行壓延來製造,或以電鍍來形成箔。又,亦可進行乾式鍍敷將基材1成膜在後述之電磁波屏蔽材的樹脂層或樹脂膜表面。
使基材1之厚度超過4μm。若基材1之厚度在4μm以下,則對於數十MHz之低頻的屏蔽性能差,且難以藉壓延或電解來製造基材1,並且處理性差。基材1之厚度較佳為5~100μm,更佳為6~50μm。若基材1之厚度較100μm厚,則柔軟性差,於後步驟難以加工,且原料成本亦會有增加之情形。
使用銅箔作為基材1之情形時,雖然銅箔之種類並無特別限制,但典型地可以壓延銅箔或電解銅箔之形態來使用。一般而言,電解銅箔係自硫酸銅鍍浴或氰化銅鍍浴將銅電解沈積在鈦或不銹鋼之滾筒上來製造,壓延銅箔則是重複利用壓延輥進行之塑性加工與熱處理來製造。
作為壓延銅箔,可使用純度99.9%以上之無氧銅(JIS-H3100(C1020))或精銅(JIS-H3100(C1100))。又,作為銅合金箔,可根據所要求之強度或導電性,來使用公知的銅合金。作為公知的銅合金,例如可列舉0.01~0.3%之摻錫銅合金或0.01~0.05%之摻銀銅合金,尤其是作為導電性優異者,經常使用Cu-0.12%Sn、Cu-0.02%Ag。例如,作為壓延銅箔,可使用導電率在5%以上者。作為電解銅箔,則可使用公知者。
又,作為鋁箔,可使用純度99.0%以上之鋁箔。又,作為鋁合金箔,可根據所要求之強度或導電率來使用公知的鋁合金。作為公知的鋁合金,例如可列舉0.01~0.15%之Si與0.01~1.0%之摻Fe的鋁合金、1.0~1.5%的摻Mn鋁合金。
(合金層)
合金層2,係由A元素與選自Ag、Ni、Fe及Co之群中1種以上的B元素群構成,該A元素係由Sn或In構成。
鍍Sn被膜雖然耐蝕性優異,但對於NOx或SOx等腐蝕氣體之抗性未必高。
因此,代替純Sn,形成由Sn或In與既定元素構成之合金層2,藉此可提升耐蝕性、耐熱性。
合金層2較佳為金屬間化合物。作為金屬間化合物,例如可列舉Ag3Sn、Ni3Sn4、FeSn2、CoSn等。金屬間化合物相較於非平衡合金層,耐蝕性較良好。
合金層2亦可進一步含有選自P、W、Fe、及Co之群中1種以上的C元素群。若合金層2含有C元素群,則合金層2之耐蝕性會獲得提升。合金層中之C元素群的合計比例,較佳為1~40質量%,更佳為5~30質量%。
合金層2所含之Cu、Al、及Zn的合計含有率在10wt%以下,較佳在2wt%以下。合金層2所含之Cu、Al、及Zn的合計含有率若超過10wt%,則合金層2會容易氧化,使接觸電阻增加。Cu、Al、及Zn的合計含有率,係於利用STEM(掃瞄穿透式電子顯微鏡)進行之線分析,將構成合金層2之各元素作為指定元素,使指定元素合計為100%時的比例。
(基底層)
基底層3係由B元素群構成。基底層3由於可防止基材之構成元素從
基材1擴散至合金層2,因此即使是暴露在高溫環境下,接觸電阻亦不易增加。例如當使用銅箔作為基材之情形時,若Cu擴散至合金層2,則因大氣會使得合金層2中之Cu氧化,導致接觸電阻增加。又,當使用鋁箔作為基材之情形時,若欲將合金層2鍍敷於基材上,則必須首先將Zn置換鍍敷於基材上。因此,Zn會從鍍Zn層擴散至合金層2。於此情形時,對於鹽水之耐蝕性會降低。又,因大氣會使得合金層2中之Zn氧化,而導致接觸電阻增加。因此,將基底層3設置在鍍Zn層與合金層2之間,以防止Zn的擴散。
亦即,當基材1含有Cu、Al、Zn之情形時(例如,基材1為銅箔之情形時),藉由形成基底層3,可減少從基材1擴散至合金層2之Cu、Al、Zn的量。
基底層3亦可由合金層構成,該合金層係由B元素群與C元素群構成。
(總附著量)
上述A元素之總附著量為10~300μmol/dm2,較佳為20~200μmol/dm2,更佳為30~90μmol/dm2。
若A元素之總附著量未達10μmol/dm2,則合金層2不能被充分形成,而使合金層2之耐蝕性降低。另一方面,若A元素之總附著量超過300μmol/dm2,則當電磁波屏蔽材例如被使用於汽車用電纜等時,於製造步驟或組裝於汽車時會增加彎曲等之變形,而在合金層2表面產生裂紋,使耐蝕性降低。且會使得成本提高。
上述B元素群之總附著量為40~900μmol/dm2,較佳為60~800μmol/dm2,更佳為75~700μmol/dm2。
若B元素群之總附著量未達40μmol/dm2,則合金層2不能被充分形成,而使合金層2之耐蝕性降低。若B元素群之總附著量超過900μmol/dm2,則當增加彎曲等之變形時會於基底層3產生裂紋,使耐蝕性降低。且會使得成本提高。
又,所謂總附著量,係指在基材1之兩面形成有合金層2等的情形,兩面之合金層2及基底層3之附著量的合計。
若在合金層2之表面形成有A元素的氧化物,則較佳。A元素之氧化物的耐蝕性高,若於合金層之表面存在氧化物,則會進一步提升合金層之耐蝕性。
氧化物亦可不成為層,只要存在合金層2之表面即可,厚度可為1~50nm,較佳為3~30nm,更佳為5~20nm。氧化物若與合金層2比較,則由於接觸電阻較高,故若層之厚度超過50nm,則接觸電阻會增加。
(合金層之形成方法)
合金層2,可藉由合金鍍敷(濕式鍍敷)、使用構成合金層之合金之靶的濺鍍、使用構成合金層之成分的蒸鍍等來形成。
又,亦可如圖1(a)所示,例如,首先將由B元素群構成之第1鍍敷層21形成在基材1之一面,再將由A元素構成之第2鍍敷層22形成在第1鍍敷層21之表面後,進行熱處理使第1鍍敷層21之元素擴散至第2鍍敷層22中,形成圖1(b)所示之合金層2。此時,增厚第1鍍敷層21之厚度,於熱處理後使第1鍍敷層21之一部分殘留作為基底層3。又,如圖1(a)所示,藉由加熱而形成合金層2之情形,於形成第2鍍敷層22時,會因自然氧化而在第2鍍敷層22上形成氧化物,即使因藉由隨後之加熱進行的合
金化,亦會於合金層2表面殘留氧化物。該氧化物具有提升耐蝕性等特性之效果。
惟較佳使熱處理時之環境的氧濃度在2%以下,以使不會因為熱處理而在合金層2之表面過度形成氧化物。若氧濃度超過2%,則氧化物變得容易成長,使氧化物之厚度成為50nm以上而會增加初期之接觸電阻。熱處理溫度雖然並無特別限定,但A元素為Sn之情形時,較佳為80~230℃,In之情形時,較佳為80~150℃。若熱處理溫度超過A元素之熔點,則A元素會熔融成為液相,合金化會急劇進行,基底層3會局部消失,使耐熱性、耐蝕性降低。熱處理時間並無特別限定,但可設為1~15小時左右。
若熱處理不充分,則不會形成金屬間化合物,而會形成A元素與B元素之濃度在厚度方向上階段變化的非平衡合金層。
又,若為以圖1(a)所示之方法形成合金層2之情形,且第1鍍敷層21或第2鍍敷層22為容易擴散之元素的話,則亦可不進行熱處理而以常溫進行合金化。
當然,亦可在基材1之表面,不進行熱處理而直接以鍍敷等依序形成基底層3、合金層2。又,基底層3、合金層2,除了濕式鍍敷外,亦可藉由蒸鍍、PVD,CVD等來形成。
另,C元素群亦可在形成合金層2時含有在合金層2本身。又,亦可使基底層3含有C元素群,而在基底層3之表面形成合金層2後,以熱處理使C元素群擴散至合金層2中。
接著,參照圖2,說明本發明之實施形態的電磁波屏蔽材
100。電磁波屏蔽材100係將樹脂層或樹脂膜4積層在電磁波屏蔽用金屬箔10之一面而成。
作為樹脂層,例如可使用聚醯亞胺等樹脂,作為樹脂膜,例如可使用PET(聚對酞酸乙二酯)、PEN(聚萘二甲酸乙二酯(polyethylene naphthalate))之膜。樹脂層或樹脂膜雖然亦可藉由接著劑接著在金屬箔,但亦可在沒有使用接著劑下,將熔融樹脂澆鑄在金屬箔上,或將膜熱壓合在金屬箔。又,亦可使用在樹脂膜以PVD或CVD直接形成銅或鋁之層作為基材的膜,或在樹脂膜以PVD或CVD形成銅或鋁之薄層作為導電層後,在該導電層上以濕式鍍敷形成厚金屬層的金屬化膜。
樹脂層或樹脂膜可使用公知者。樹脂層或樹脂膜之厚度並無特別限定,但例如可適合使用1~100μm,較佳為3~50μm。又,於使用接著劑之情形時,接著層之厚度例如可設在10μm以下。
從材料輕薄化之觀點來看,電磁波屏蔽材100之厚度較佳在1.0mm以下,更佳為0.01~0.5mm。
[實施例]
接著,雖然舉出實施例來進一步詳細說明本發明,但本發明並不限定於此等。
(基材)
壓延銅箔,係使用調整成既定厚度之壓延銅箔(JX日鑛日石金屬製之型號C1100)。
電解銅箔,係使用厚度8μm之無粗化處理的電解銅箔(JX日鑛日石金屬製之型號JTC箔)。
Cu金屬化膜,係使用厚度8μm之金屬化CCL(日鑛金屬製之製品名「MAQINAS」)。
鋁箔,係使用厚度12μm之鋁箔(陽光鋁工業公司製)。
Al金屬化膜,係使用以真空蒸鍍將6μm之鋁形成在厚度12μm之PET膜(東洋紡績公司製)。
(合金層)
將合金層形成在上述基材之一面。合金層之形成方法示於表1。
於表1中,「鍍敷」係指以圖1(a)所示之方法依序鍍敷第1鍍敷層21、第2鍍敷層22後,以表1所示之條件進行過熱處理。於表1中,「合金鍍敷」係指藉由鍍敷將基底層形成在基材上後,藉由合金鍍敷將合金層形成在基底層之表面。
另,Ni、Sn、Ag、Co、Fe、Cu、Zn、各種Ni合金之各鍍敷,係以下述條件來形成。
鍍Ni:硫酸Ni浴(Ni濃度:20g/L,電流密度:2~10A/dm2)
鍍Sn:苯酚磺酸Sn浴(Sn濃度:40g/L,電流密度:2~10A/dm2)
鍍Ag:氰化Ag浴(Ag濃度:10g/L,電流密度:0.2~4A/dm2)
鍍Co:氰化Ag浴(Co濃度:20g/L,電流密度:1~8A/dm2)
鍍Fe:硫酸Fe浴(Fe濃度:20g/L,電流密度:2~10A/dm2)
鍍Cu:硫酸Cu浴(Cu濃度:20g/L,電流密度:2~10A/dm2)
鍍Zn:硫酸Zn浴(Zn濃度:20g/L,電流密度:1~5A/dm2)
鍍Ni-Sn:焦磷酸鹽浴(Ni濃度10g/L,Sn濃度10g/L,電流密度:
0.1~2A/dm2)
鍍Ni-P:硫酸浴(Ni濃度:20g/L,P濃度:20g/L,電流密度:2~4A/dm2)
鍍Ni-W:硫酸浴(Ni濃度:20g/L,W濃度:20g/L,電流密度:0.1~2A/dm2)
鍍Ni-Fe:硫酸浴(Ni濃度:20g/L,Fe濃度:10g/L,電流密度:0.1~2A/dm2)
鍍Ni-Co:硫酸浴(Ni濃度:20g/L,Co濃度:10g/L,電流密度:0.1~2A/dm2)
於表1中,「濺鍍」係指依序濺鍍Ni、Sn後,以表1所示之條件進行過熱處理。
於表1中,「合金濺鍍」係指將Ni濺鍍在基材上形成基底層後,使用對應之合金靶材料進行濺鍍而形成合金層。另,以合金濺鍍成膜之層由於為合金層之組成,故未進行熱處理。
另,濺鍍、合金濺鍍係以下述條件來進行。
濺鍍裝置:批次式濺鍍裝置(愛發科(ULVAC)公司,型式MNS-6000)
濺鍍條件:到達真空度1.0×10-5Pa,濺鍍壓力0.2Pa,濺鍍電力:50W
靶:Ni(純度3N),Sn(純度3N),Ni-Sn(Ni:Sn=30:70質量%)
於表1中,「蒸鍍」係以下述條件來進行。
蒸鍍裝置:真空蒸鍍裝置(愛發科公司,型式MB05-1006)
蒸鍍條件:到達真空度5.0×10-3Pa,電子束加速電壓6kV
蒸鍍源:Ni(純度3N)、In(純度3N),Sn(純度3N)
(附著量之測量)
將所得之電磁波屏蔽用金屬箔切下50mm×50mm,將表面被膜溶解在混合有HNO3(2重量%)與HCl(5重量%)之溶液。然後,以ICP發射光譜儀(精工電子納米科技(SII NANOTECHNOLOGY)股份有限公司製,SFC-3100)對溶液中之金屬濃度進行定量,自每單位面積之金屬重量算出附著量(μmol/dm2)。
(層構成之判定)
對所得之電磁波屏蔽用金屬箔,進行利用STEM(掃瞄穿透式電子顯微鏡,日本電子股份有限公司製JEM-2100F)之線分析,判定層構成。分析之指定元素,為A元素、B元素群、C元素群、C、S及O。又,使上述指定元素之合計為100%,分析各元素之濃度(wt%)(加速電壓:200kV,測量間隔:2nm)。
使A元素之合計量及B元素群之合計量各自在5wt%以上之層為合金層2。例如,B元素含有2元素之情形,採用各元素之合計值。
使下述之層為氧化物:較合金層2更位於表層側,含有合計5wt%以上之A元素,且O在5wt%以上,並使下述之層為基底層3:較合金層2更位於下層側,含有合計5wt%以上之B元素群之元素,且A元素合計未達5wt%。
使上述定義之合金層2中的Cu、Al、Zn、及C元素之比例的平均值為Cu、Al、Zn及C元素的含有率。
接著,將所得之電磁波屏蔽用金屬箔合金層側之面纏繞在直徑2mm之管作為外側後,返回至纏繞前之狀態,評價下述之耐熱性、耐蝕
性、屏蔽效果。
(耐熱性)
又,對所得之電磁波屏蔽用金屬箔合金層側之面,各自以120℃進行500小時大氣加熱後,測量合金層側最表面之接觸電阻。
接觸電阻之測量,係使用山崎精機股份有限公司製之電接點模擬器CRS-1,以四端子法來進行測量。探針:金探針,接觸荷重:20gf,偏壓電流:10mA,滑動距離:1mm
◎:接觸電阻未達20mΩ
○:接觸電阻在20mΩ以上未達100mΩ
×:接觸電阻在100mΩ以上
若大氣加熱後之接觸電阻的評價為◎或○,則耐熱性稱得上良好。
(耐蝕性)
又,對所得之電磁波屏蔽用金屬箔合金層側之面,在沒有進行大氣加熱下進行耐蝕性試驗(鹽水噴霧試驗及氣體腐蝕試驗)後,測量合金層側最表面之接觸電阻。
接觸電阻之測量與上述耐熱性試驗相同。
鹽水噴霧試驗,係按照JIS-Z2371(溫度:35℃,鹽水成分:氯化鈉,鹽水濃度:5wt%,噴霧壓力:98±10kPa,噴霧時間:48h)。
◎:接觸電阻未達20mΩ
○:接觸電阻在20mΩ以上未達100mΩ
×:接觸電阻在100mΩ以上
氣體腐蝕試驗,係按照IEC60512-11-7之試驗方法4(溫
度:25℃,濕度:75%,H2S濃度:10ppb,NO2濃度:200ppb,Cl2濃度:10ppb,SO2濃度:200ppb,試驗時間:21天)。
◎:接觸電阻未達20mΩ
○:接觸電阻在20mΩ以上未達100mΩ
×:接觸電阻在100mΩ以上
若鹽水噴霧試驗及氣體腐蝕試驗的評價為◎或○,則耐蝕性稱得上良好。
(電磁波屏蔽效果)
又,於測量頻率50~1000MHz之範圍,以KEC(關西電子工業振興中心)法測量所得之電磁波屏蔽用金屬箔的電磁波屏蔽效果。KEC法係下述之方法:以試樣不存在裝置內之狀態作為基準,以分貝顯示來評價裝置內插入有試樣時之衰減量(電磁波屏蔽效果),值越大,電磁波屏蔽效果越佳。
信號產生器:SIGNAL GENERATOR SML02(ROHDE & SCHWARZ公司製)
頻譜分析儀:R3132 SPECTRUM ANALYZER(愛德萬測試(ADVANTEST)公司製)
對各試樣以上述KEC法各測量3次,以下述基準判定將其值平均化而得者。若電磁波屏蔽效果之評價為○或△,則實用上沒有問題。
○:衰減量超過80dB
△:衰減量超過40dB,但在80dB以下
×:衰減量未達40dB
將所得之結果示於表1、表2及圖3~圖4。
從表1、表2清楚可知,於各實施例(在基材表面具有由A
元素與B元素群(及視需要之C元素群)構成之合金層,在合金層與基材之間形成有由B元素群(及視需要之C元素群)構成之基底層,A元素之總附著量為10~300μmol/dm2,且B元素群之總附著量為40~900μmol/dm2)之情形,耐熱性、耐蝕性、電磁波屏蔽效果優異。
尤其是經以A元素熔點以下之溫度進行熱處理來形成合金層的實施例1~5、7~15、18、20~23的情形,相較於未經熱處理的實施例6、16、17、19及經以熔點以上之溫度進行熱處理的實施例24,耐蝕性更佳。此係因為如後述般合金層為金屬間化合物的緣故。
另,圖3、4各自顯示實施例4之試樣利用STEM所得之剖面像及利用STEM所得之線分析結果。剖面像中之X層、Y層,從線分析結果可知各自為Ni-Sn合金層、Ni層。
又,藉由TEM(日本電子公司製,JEM-2100F),分析各實施例及比較例之合金層的電子繞射圖案之結果,確認實施例1~5、7~15、18、20~23,比較例1、3、5、9之合金層皆為金屬間化合物。
A元素之總附著量超過300μmol/dm2的比較例1、3的情形,由於在合金層發生裂紋,故耐熱性、耐蝕性差。
A元素之總附著量未達10μmol/dm2的比較例2的情形,耐熱性、耐蝕性差。
B元素群之附著量未達40μmol/dm2的比較例4的情形,耐熱性、耐蝕性差。
B元素群之附著量超過900μmol/dm2的比較例5的情形,由於在合金層發生裂紋,故耐熱性、耐蝕性差。
沒有形成基底層3的比較例6的情形,因鍍敷後之熱處理使得基材之Cu擴散至合金層,合金層中之Cu濃度超過10%,故耐熱性、耐蝕性差。
經以超過A元素熔點之溫度進行熱處理的比較例7的情形,由於合金化局部過度進行,故原本會成為基底層之圖1的層21的一部分,不會以基底層3之型態殘留,合金層之一部分直接形成在基材上。因此,於熱處理時基材之Cu擴散至合金層中,合金層中之Cu濃度超過10%,故耐熱性、耐蝕性差。
沒有形成基底層3的比較例8的情形,於耐熱試驗後由於基材之Cu擴散至合金層,故耐熱性差。惟,比較例8的情形,由於在形成合金層時未進行熱處理,故Cu沒有擴散至合金層,合金層中之Cu濃度未達10%,因此耐蝕性良好。
基材厚度在4μm以下的比較例9的情形,電磁波屏蔽效果差。
使用Cu代替B元素群的比較例10的情形,耐熱性、耐蝕性差。
使用Zn代替A元素的比較例11的情形,耐熱性、耐蝕性差。
1‧‧‧金屬箔
2‧‧‧合金層
3‧‧‧基底層
10‧‧‧電磁波屏蔽用金屬箔
21‧‧‧第1鍍敷層
22‧‧‧第2鍍敷層
Claims (11)
- 一種電磁波屏蔽用金屬箔,在由超過厚度4μm之金屬箔構成之基材的一面或兩面,形成有由A元素與B元素群構成的合金層,其中該A元素係由Sn構成,該B元素群係選自Ag、Ni、Fe及Co之群中的1種以上,並在該合金層與該基材之間,形成有由該B元素群構成之基底層,該A元素之附著量為10~300μmol/dm2,且該B元素群之總附著量為40~900μmol/dm2。
- 如申請專利範圍第1項之電磁波屏蔽用金屬箔,其中,該合金層為金屬間化合物。
- 如申請專利範圍第1或2項之電磁波屏蔽用金屬箔,其中,該合金層進一步含有選自P、W、Fe及Co之群中1種以上的C元素群。
- 如申請專利範圍第1或2項之電磁波屏蔽用金屬箔,其中,相對於該合金層整體,該C元素群之合計含有率為40wt%以下。
- 如申請專利範圍第1或2項之電磁波屏蔽用金屬箔,其中,該合金層所含之Cu、Al及Zn的合計含有率為10wt%以下。
- 如申請專利範圍第1或2項之電磁波屏蔽用金屬箔,其中,在該合金層之表面,形成有氧化物。
- 如申請專利範圍第1或2項之電磁波屏蔽用金屬箔,其中,該基材係由金、銀、白金、不銹鋼、鐵、鎳,鋅、銅、銅合金、鋁、或鋁合金構成。
- 如申請專利範圍第1或2項之電磁波屏蔽用金屬箔,其中,該基材為鋁或鋁合金,在該基材與該基底層之間形成有Zn層。
- 一種電磁波屏蔽材,係在申請專利範圍第1至8項中任一項之電磁波 屏蔽用金屬箔的一面,積層有樹脂層。
- 如申請專利範圍第9項之電磁波屏蔽材,其中,該樹脂層為樹脂膜。
- 一種屏蔽電纜,受到申請專利範圍第9或10項之電磁波屏蔽材屏蔽。
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