TWI612851B - 用於極紫外線光源的系統、將自極紫外光系統產生之照射放大光束相對於標靶材料對準的方法及極紫外光系統 - Google Patents
用於極紫外線光源的系統、將自極紫外光系統產生之照射放大光束相對於標靶材料對準的方法及極紫外光系統 Download PDFInfo
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- TWI612851B TWI612851B TW103109580A TW103109580A TWI612851B TW I612851 B TWI612851 B TW I612851B TW 103109580 A TW103109580 A TW 103109580A TW 103109580 A TW103109580 A TW 103109580A TW I612851 B TWI612851 B TW I612851B
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- 239000013077 target material Substances 0.000 title claims abstract description 196
- 238000000034 method Methods 0.000 title claims description 35
- 230000001678 irradiating effect Effects 0.000 title description 2
- 230000003287 optical effect Effects 0.000 claims abstract description 187
- 238000005286 illumination Methods 0.000 claims description 167
- 238000005259 measurement Methods 0.000 claims description 36
- 230000003321 amplification Effects 0.000 claims description 30
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 30
- 230000003595 spectral effect Effects 0.000 claims description 22
- 230000036278 prepulse Effects 0.000 claims description 20
- 238000003384 imaging method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
- 201000009310 astigmatism Diseases 0.000 claims description 8
- 230000003993 interaction Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- -1 for example Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000004807 localization Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000012634 optical imaging Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009420 retrofitting Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361787228P | 2013-03-15 | 2013-03-15 | |
US61/787,228 | 2013-03-15 | ||
US14/035,847 | 2013-09-24 | ||
US14/035,847 US8872144B1 (en) | 2013-09-24 | 2013-09-24 | System and method for laser beam focus control for extreme ultraviolet laser produced plasma source |
US14/184,777 US9000405B2 (en) | 2013-03-15 | 2014-02-20 | Beam position control for an extreme ultraviolet light source |
US14/184,777 | 2014-02-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201444418A TW201444418A (zh) | 2014-11-16 |
TWI612851B true TWI612851B (zh) | 2018-01-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103109580A TWI612851B (zh) | 2013-03-15 | 2014-03-14 | 用於極紫外線光源的系統、將自極紫外光系統產生之照射放大光束相對於標靶材料對準的方法及極紫外光系統 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6374481B2 (ko) |
KR (1) | KR102214861B1 (ko) |
TW (1) | TWI612851B (ko) |
WO (1) | WO2014149435A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9820368B2 (en) | 2015-08-12 | 2017-11-14 | Asml Netherlands B.V. | Target expansion rate control in an extreme ultraviolet light source |
TWI739755B (zh) * | 2015-08-12 | 2021-09-21 | 荷蘭商Asml荷蘭公司 | 極紫外線光源中之目標擴張率控制 |
US10663866B2 (en) * | 2016-09-20 | 2020-05-26 | Asml Netherlands B.V. | Wavelength-based optical filtering |
US10935720B2 (en) * | 2019-04-29 | 2021-03-02 | Ii-Vi Delaware, Inc. | Laser beam product parameter adjustments |
KR20210152703A (ko) | 2020-06-09 | 2021-12-16 | 삼성전자주식회사 | 반도체 제조 장치 및 그의 동작 방법 |
JP2023535267A (ja) * | 2020-07-30 | 2023-08-17 | エーエスエムエル ネザーランズ ビー.ブイ. | Euv光源のターゲット計測 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110141865A1 (en) * | 2009-12-15 | 2011-06-16 | Cymer Inc. | Metrology for Extreme Ultraviolet Light Source |
US20120019826A1 (en) * | 2010-07-22 | 2012-01-26 | Cymer, Inc. | Alignment of light source focus |
US8173985B2 (en) * | 2009-12-15 | 2012-05-08 | Cymer, Inc. | Beam transport system for extreme ultraviolet light source |
US20130020511A1 (en) * | 2010-10-08 | 2013-01-24 | Gigaphoton Inc | Mirror, mirror device, laser apparatus, and extreme ultraviolet light generation apparatus |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3256984B2 (ja) * | 1991-06-13 | 2002-02-18 | ソニー・プレシジョン・テクノロジー株式会社 | 変位検出装置 |
US7598509B2 (en) * | 2004-11-01 | 2009-10-06 | Cymer, Inc. | Laser produced plasma EUV light source |
US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
JP5368261B2 (ja) * | 2008-11-06 | 2013-12-18 | ギガフォトン株式会社 | 極端紫外光源装置、極端紫外光源装置の制御方法 |
US8283643B2 (en) * | 2008-11-24 | 2012-10-09 | Cymer, Inc. | Systems and methods for drive laser beam delivery in an EUV light source |
-
2014
- 2014-02-25 JP JP2016500393A patent/JP6374481B2/ja active Active
- 2014-02-25 WO PCT/US2014/018419 patent/WO2014149435A1/en active Application Filing
- 2014-02-25 KR KR1020157028292A patent/KR102214861B1/ko active IP Right Grant
- 2014-03-14 TW TW103109580A patent/TWI612851B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110141865A1 (en) * | 2009-12-15 | 2011-06-16 | Cymer Inc. | Metrology for Extreme Ultraviolet Light Source |
US8173985B2 (en) * | 2009-12-15 | 2012-05-08 | Cymer, Inc. | Beam transport system for extreme ultraviolet light source |
US20120019826A1 (en) * | 2010-07-22 | 2012-01-26 | Cymer, Inc. | Alignment of light source focus |
US20130020511A1 (en) * | 2010-10-08 | 2013-01-24 | Gigaphoton Inc | Mirror, mirror device, laser apparatus, and extreme ultraviolet light generation apparatus |
Also Published As
Publication number | Publication date |
---|---|
KR102214861B1 (ko) | 2021-02-10 |
JP6374481B2 (ja) | 2018-08-15 |
JP2016512383A (ja) | 2016-04-25 |
TW201444418A (zh) | 2014-11-16 |
WO2014149435A1 (en) | 2014-09-25 |
KR20150130440A (ko) | 2015-11-23 |
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