TWI610359B - 基板洗淨裝置及基板洗淨方法 - Google Patents

基板洗淨裝置及基板洗淨方法 Download PDF

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Publication number
TWI610359B
TWI610359B TW102147709A TW102147709A TWI610359B TW I610359 B TWI610359 B TW I610359B TW 102147709 A TW102147709 A TW 102147709A TW 102147709 A TW102147709 A TW 102147709A TW I610359 B TWI610359 B TW I610359B
Authority
TW
Taiwan
Prior art keywords
substrate
fluid nozzle
cleaning
fluid
substrate holding
Prior art date
Application number
TW102147709A
Other languages
English (en)
Chinese (zh)
Other versions
TW201428842A (zh
Inventor
石橋知淳
Original Assignee
荏原製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荏原製作所股份有限公司 filed Critical 荏原製作所股份有限公司
Publication of TW201428842A publication Critical patent/TW201428842A/zh
Application granted granted Critical
Publication of TWI610359B publication Critical patent/TWI610359B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW102147709A 2012-12-28 2013-12-23 基板洗淨裝置及基板洗淨方法 TWI610359B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012287121A JP2014130883A (ja) 2012-12-28 2012-12-28 基板洗浄装置及び基板洗浄方法
JP2012-287121 2012-12-28

Publications (2)

Publication Number Publication Date
TW201428842A TW201428842A (zh) 2014-07-16
TWI610359B true TWI610359B (zh) 2018-01-01

Family

ID=51015749

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102147709A TWI610359B (zh) 2012-12-28 2013-12-23 基板洗淨裝置及基板洗淨方法

Country Status (4)

Country Link
US (1) US20140182632A1 (cg-RX-API-DMAC7.html)
JP (1) JP2014130883A (cg-RX-API-DMAC7.html)
KR (1) KR20140086846A (cg-RX-API-DMAC7.html)
TW (1) TWI610359B (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107359107B (zh) * 2014-11-18 2020-07-14 通富微电子股份有限公司 一种圆片清洗机用的喷头及圆片清洗机
KR101880232B1 (ko) * 2015-07-13 2018-07-19 주식회사 제우스 기판 액처리 장치 및 방법
CN105826224B (zh) * 2016-05-11 2019-05-21 中国电子科技集团公司第四十五研究所 一种用于半导体晶圆的清洁腔
JP7355618B2 (ja) * 2018-12-04 2023-10-03 株式会社ディスコ ウエーハ分割装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6012470A (en) * 1996-07-15 2000-01-11 Lam Research Corporation Method of drying a wafer
KR100523635B1 (ko) * 2003-02-04 2005-10-25 동부아남반도체 주식회사 웨이퍼 표면의 슬러리 제거 장치 및 그 방법
US20080053487A1 (en) * 2006-08-29 2008-03-06 Tomohiro Goto Substrate processing method and substrate processing apparatus
US20080251101A1 (en) * 2004-04-23 2008-10-16 Hiroki Ohno Substrate Cleaning Method, Substrate Cleaning Equipment, Computer Program, and Program Recording Medium

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999016109A1 (en) * 1997-09-24 1999-04-01 Interuniversitair Micro-Elektronica Centrum Vereniging Zonder Winstbejag Method and apparatus for removing a liquid from a surface
US6352623B1 (en) * 1999-12-17 2002-03-05 Nutool, Inc. Vertically configured chamber used for multiple processes
JP2005353739A (ja) * 2004-06-09 2005-12-22 Dainippon Screen Mfg Co Ltd 基板洗浄装置
JP5686647B2 (ja) * 2011-03-28 2015-03-18 株式会社東芝 基板保持装置、基板洗浄装置および基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6012470A (en) * 1996-07-15 2000-01-11 Lam Research Corporation Method of drying a wafer
KR100523635B1 (ko) * 2003-02-04 2005-10-25 동부아남반도체 주식회사 웨이퍼 표면의 슬러리 제거 장치 및 그 방법
US20080251101A1 (en) * 2004-04-23 2008-10-16 Hiroki Ohno Substrate Cleaning Method, Substrate Cleaning Equipment, Computer Program, and Program Recording Medium
US20080053487A1 (en) * 2006-08-29 2008-03-06 Tomohiro Goto Substrate processing method and substrate processing apparatus

Also Published As

Publication number Publication date
KR20140086846A (ko) 2014-07-08
US20140182632A1 (en) 2014-07-03
TW201428842A (zh) 2014-07-16
JP2014130883A (ja) 2014-07-10

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