TWI607498B - 使用帶電粒子束曝露樣品中所關注特徵的方法及系統 - Google Patents
使用帶電粒子束曝露樣品中所關注特徵的方法及系統 Download PDFInfo
- Publication number
- TWI607498B TWI607498B TW102136309A TW102136309A TWI607498B TW I607498 B TWI607498 B TW I607498B TW 102136309 A TW102136309 A TW 102136309A TW 102136309 A TW102136309 A TW 102136309A TW I607498 B TWI607498 B TW I607498B
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- Prior art keywords
- interest
- sample
- feature
- grinding
- ion beam
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title claims description 38
- 238000000227 grinding Methods 0.000 claims description 89
- 238000010884 ion-beam technique Methods 0.000 claims description 72
- 239000000463 material Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 59
- 238000000151 deposition Methods 0.000 claims description 43
- 238000009304 pastoral farming Methods 0.000 claims description 33
- 239000002245 particle Substances 0.000 claims description 21
- 238000010894 electron beam technology Methods 0.000 claims description 16
- 238000011049 filling Methods 0.000 claims description 13
- 238000003384 imaging method Methods 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000011163 secondary particle Substances 0.000 claims description 3
- 239000000523 sample Substances 0.000 description 73
- 239000000758 substrate Substances 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 12
- 230000008901 benefit Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000004590 computer program Methods 0.000 description 7
- 230000009977 dual effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000007689 inspection Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001888 ion beam-induced deposition Methods 0.000 description 3
- 229910001338 liquidmetal Inorganic materials 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010978 in-process monitoring Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- YLJREFDVOIBQDA-UHFFFAOYSA-N tacrine Chemical compound C1=CC=C2C(N)=C(CCCC3)C3=NC2=C1 YLJREFDVOIBQDA-UHFFFAOYSA-N 0.000 description 1
- 229960001685 tacrine Drugs 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/31—Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/10—Different kinds of radiation or particles
- G01N2223/104—Different kinds of radiation or particles ions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31732—Depositing thin layers on selected microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Sampling And Sample Adjustment (AREA)
- Mechanical Engineering (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261710376P | 2012-10-05 | 2012-10-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201428834A TW201428834A (zh) | 2014-07-16 |
| TWI607498B true TWI607498B (zh) | 2017-12-01 |
Family
ID=50435506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102136309A TWI607498B (zh) | 2012-10-05 | 2013-10-07 | 使用帶電粒子束曝露樣品中所關注特徵的方法及系統 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9412560B2 (enExample) |
| EP (1) | EP2903773B1 (enExample) |
| JP (1) | JP6199979B2 (enExample) |
| KR (1) | KR102039528B1 (enExample) |
| CN (1) | CN104822482B (enExample) |
| TW (1) | TWI607498B (enExample) |
| WO (1) | WO2014055982A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI612551B (zh) | 2012-10-05 | 2018-01-21 | Fei公司 | 在帶電粒子束樣品的製備減少屏幕效應之方法及系統 |
| JP6199979B2 (ja) * | 2012-10-05 | 2017-09-20 | エフ・イ−・アイ・カンパニー | 傾斜ミリング保護のためのバルク付着 |
| KR102155834B1 (ko) | 2012-10-05 | 2020-09-14 | 에프이아이 컴파니 | 높은 종횡비 구조 분석 |
| TWI643235B (zh) * | 2012-12-31 | 2018-12-01 | 美商Fei公司 | 用於具有一帶電粒子束之傾斜或偏斜硏磨操作之基準設計 |
| US9564291B1 (en) * | 2014-01-27 | 2017-02-07 | Mochii, Inc. | Hybrid charged-particle beam and light beam microscopy |
| CN105300754B (zh) * | 2015-09-11 | 2019-06-28 | 上海华力微电子有限公司 | 一种防止tem芯片样品破裂的方法 |
| US9625398B1 (en) | 2016-01-11 | 2017-04-18 | International Business Machines Corporation | Cross sectional depth composition generation utilizing scanning electron microscopy |
| US10242842B2 (en) * | 2016-03-25 | 2019-03-26 | Hitachi High-Tech Science Corporation | Method for cross-section processing and observation and apparatus therefor |
| US10324049B2 (en) | 2017-02-15 | 2019-06-18 | Saudi Arabian Oil Company | Rock sample preparation method by using focused ion beam for minimizing curtain effect |
| US10546719B2 (en) * | 2017-06-02 | 2020-01-28 | Fei Company | Face-on, gas-assisted etching for plan-view lamellae preparation |
| DE102017212020B3 (de) * | 2017-07-13 | 2018-05-30 | Carl Zeiss Microscopy Gmbh | Verfahren zur In-situ-Präparation und zum Transfer mikroskopischer Proben, Computerprogrammprodukt sowie mikroskopische Probe |
| KR102537699B1 (ko) * | 2017-12-26 | 2023-05-26 | 삼성전자주식회사 | 반도체 장치의 검사 방법 |
| US11177110B2 (en) * | 2018-02-06 | 2021-11-16 | Howard Hughes Medical Institute | Volume scanning electron microscopy of serial thick tissue sections with gas cluster milling |
| US10811219B2 (en) * | 2018-08-07 | 2020-10-20 | Applied Materials Israel Ltd. | Method for evaluating a region of an object |
| DE102018120630B3 (de) | 2018-08-23 | 2019-10-31 | Carl Zeiss Microscopy Gmbh | Verfahren zum Bearbeiten eines Objekts und Programm zur Steuerung eines Partikelstrahlsystems |
| JP7305422B2 (ja) * | 2019-05-13 | 2023-07-10 | 株式会社日立ハイテク | パターン評価システム及びパターン評価方法 |
| US11501951B1 (en) | 2021-05-14 | 2022-11-15 | Applied Materials Israel Ltd. | X-ray imaging in cross-section using un-cut lamella with background material |
| US20230196189A1 (en) * | 2021-12-20 | 2023-06-22 | Carl Zeiss Smt Gmbh | Measurement method and apparatus for semiconductor features with increased throughput |
| WO2023117238A1 (en) * | 2021-12-20 | 2023-06-29 | Carl Zeiss Smt Gmbh | Measurement method and apparatus for semiconductor features with increased throughput |
| US12437965B1 (en) * | 2022-08-01 | 2025-10-07 | Mochil, Inc. | Charged-particle beam microscope with differential vacuum pressures |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050109956A1 (en) * | 2000-12-15 | 2005-05-26 | Lundquist Theodore R. | Precise, in-situ endpoint detection for charged particle beam processing |
| US20090242759A1 (en) * | 2007-12-06 | 2009-10-01 | Fei Company | Slice and view with decoration |
| US20110240852A1 (en) * | 2010-03-31 | 2011-10-06 | Fei Company | Automated slice milling for viewing a feature |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5435850A (en) | 1993-09-17 | 1995-07-25 | Fei Company | Gas injection system |
| US5851413A (en) | 1996-06-19 | 1998-12-22 | Micrion Corporation | Gas delivery systems for particle beam processing |
| US6268608B1 (en) * | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
| US6373070B1 (en) | 1999-10-12 | 2002-04-16 | Fei Company | Method apparatus for a coaxial optical microscope with focused ion beam |
| US6621081B2 (en) * | 2001-01-10 | 2003-09-16 | International Business Machines Corporation | Method of pole tip sample preparation using FIB |
| US6911832B2 (en) | 2003-07-16 | 2005-06-28 | Texas Instruments Incorporated | Focused ion beam endpoint detection using charge pulse detection electronics |
| US7611610B2 (en) * | 2003-11-18 | 2009-11-03 | Fei Company | Method and apparatus for controlling topographical variation on a milled cross-section of a structure |
| JP2006228593A (ja) * | 2005-02-18 | 2006-08-31 | Seiko Epson Corp | 断面観察方法 |
| US7442924B2 (en) * | 2005-02-23 | 2008-10-28 | Fei, Company | Repetitive circumferential milling for sample preparation |
| JP2006331847A (ja) * | 2005-05-26 | 2006-12-07 | Hitachi High-Technologies Corp | イオンビーム加工・観察装置及び方法 |
| JP4685627B2 (ja) * | 2005-12-28 | 2011-05-18 | 株式会社日立ハイテクノロジーズ | 試料加工方法 |
| DE102009001910A1 (de) * | 2009-03-26 | 2010-09-30 | Carl Zeiss Nts Gmbh | Verfahren und Vorrichtung zur Erzeugung dreidimensionaler Bilddaten |
| CN103403520B (zh) * | 2011-01-28 | 2015-12-23 | Fei公司 | Tem样品制备 |
| EP2749863A3 (en) * | 2012-12-31 | 2016-05-04 | Fei Company | Method for preparing samples for imaging |
| US8912490B2 (en) * | 2011-06-03 | 2014-12-16 | Fei Company | Method for preparing samples for imaging |
| US8822921B2 (en) * | 2011-06-03 | 2014-09-02 | Fei Company | Method for preparing samples for imaging |
| US8859963B2 (en) * | 2011-06-03 | 2014-10-14 | Fei Company | Methods for preparing thin samples for TEM imaging |
| CN103797351B (zh) * | 2011-09-12 | 2019-11-05 | Fei 公司 | 掠射角铣削 |
| WO2013082496A1 (en) | 2011-12-01 | 2013-06-06 | Fei Company | High throughput tem preparation processes and hardware for backside thinning of cross-sectional view lamella |
| US8740209B2 (en) * | 2012-02-22 | 2014-06-03 | Expresslo Llc | Method and apparatus for ex-situ lift-out specimen preparation |
| EP2852967B1 (en) * | 2012-05-21 | 2019-01-16 | FEI Company | Preparation of lamellae for tem viewing |
| US9733164B2 (en) | 2012-06-11 | 2017-08-15 | Fei Company | Lamella creation method and device using fixed-angle beam and rotating sample stage |
| TWI612551B (zh) * | 2012-10-05 | 2018-01-21 | Fei公司 | 在帶電粒子束樣品的製備減少屏幕效應之方法及系統 |
| JP6199979B2 (ja) * | 2012-10-05 | 2017-09-20 | エフ・イ−・アイ・カンパニー | 傾斜ミリング保護のためのバルク付着 |
| KR102155834B1 (ko) * | 2012-10-05 | 2020-09-14 | 에프이아이 컴파니 | 높은 종횡비 구조 분석 |
| CN104885196B (zh) * | 2012-12-31 | 2018-02-06 | Fei 公司 | 带电粒子束系统以及使用带电粒子束诱发沉积来填充孔的方法 |
| US20150137003A1 (en) * | 2013-11-21 | 2015-05-21 | United Microelectronics Corp. | Specimen preparation method |
-
2013
- 2013-10-07 JP JP2015535869A patent/JP6199979B2/ja active Active
- 2013-10-07 CN CN201380063847.8A patent/CN104822482B/zh active Active
- 2013-10-07 WO PCT/US2013/063704 patent/WO2014055982A1/en not_active Ceased
- 2013-10-07 KR KR1020157011682A patent/KR102039528B1/ko active Active
- 2013-10-07 US US14/432,730 patent/US9412560B2/en active Active
- 2013-10-07 EP EP13843746.2A patent/EP2903773B1/en active Active
- 2013-10-07 TW TW102136309A patent/TWI607498B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050109956A1 (en) * | 2000-12-15 | 2005-05-26 | Lundquist Theodore R. | Precise, in-situ endpoint detection for charged particle beam processing |
| US20090242759A1 (en) * | 2007-12-06 | 2009-10-01 | Fei Company | Slice and view with decoration |
| US20110240852A1 (en) * | 2010-03-31 | 2011-10-06 | Fei Company | Automated slice milling for viewing a feature |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104822482B (zh) | 2017-12-05 |
| CN104822482A (zh) | 2015-08-05 |
| KR102039528B1 (ko) | 2019-11-01 |
| EP2903773A4 (en) | 2015-10-21 |
| KR20150064190A (ko) | 2015-06-10 |
| JP2015533256A (ja) | 2015-11-19 |
| US9412560B2 (en) | 2016-08-09 |
| TW201428834A (zh) | 2014-07-16 |
| EP2903773B1 (en) | 2016-08-31 |
| JP6199979B2 (ja) | 2017-09-20 |
| US20150243477A1 (en) | 2015-08-27 |
| EP2903773A1 (en) | 2015-08-12 |
| WO2014055982A1 (en) | 2014-04-10 |
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