CN104822482B - 用于倾斜铣削保护的体沉积 - Google Patents

用于倾斜铣削保护的体沉积 Download PDF

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Publication number
CN104822482B
CN104822482B CN201380063847.8A CN201380063847A CN104822482B CN 104822482 B CN104822482 B CN 104822482B CN 201380063847 A CN201380063847 A CN 201380063847A CN 104822482 B CN104822482 B CN 104822482B
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milling
angle
feature
interested
sample
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CN104822482A (zh
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S.斯通
S.H.李
J.布莱克伍德
M.施米德特
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FEI Co
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FEI Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/31—Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/104—Different kinds of radiation or particles ions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Mechanical Engineering (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
CN201380063847.8A 2012-10-05 2013-10-07 用于倾斜铣削保护的体沉积 Active CN104822482B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261710376P 2012-10-05 2012-10-05
US61/710376 2012-10-05
PCT/US2013/063704 WO2014055982A1 (en) 2012-10-05 2013-10-07 Bulk deposition for tilted mill protection

Publications (2)

Publication Number Publication Date
CN104822482A CN104822482A (zh) 2015-08-05
CN104822482B true CN104822482B (zh) 2017-12-05

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Country Status (7)

Country Link
US (1) US9412560B2 (enExample)
EP (1) EP2903773B1 (enExample)
JP (1) JP6199979B2 (enExample)
KR (1) KR102039528B1 (enExample)
CN (1) CN104822482B (enExample)
TW (1) TWI607498B (enExample)
WO (1) WO2014055982A1 (enExample)

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TWI612551B (zh) 2012-10-05 2018-01-21 Fei公司 在帶電粒子束樣品的製備減少屏幕效應之方法及系統
CN105264635B (zh) 2012-12-31 2018-11-20 Fei 公司 用于利用带电粒子束的倾斜或掠射研磨操作的基准设计
US9564291B1 (en) * 2014-01-27 2017-02-07 Mochii, Inc. Hybrid charged-particle beam and light beam microscopy
CN105300754B (zh) * 2015-09-11 2019-06-28 上海华力微电子有限公司 一种防止tem芯片样品破裂的方法
US9625398B1 (en) 2016-01-11 2017-04-18 International Business Machines Corporation Cross sectional depth composition generation utilizing scanning electron microscopy
US10242842B2 (en) * 2016-03-25 2019-03-26 Hitachi High-Tech Science Corporation Method for cross-section processing and observation and apparatus therefor
US10324049B2 (en) 2017-02-15 2019-06-18 Saudi Arabian Oil Company Rock sample preparation method by using focused ion beam for minimizing curtain effect
US10546719B2 (en) * 2017-06-02 2020-01-28 Fei Company Face-on, gas-assisted etching for plan-view lamellae preparation
DE102017212020B3 (de) * 2017-07-13 2018-05-30 Carl Zeiss Microscopy Gmbh Verfahren zur In-situ-Präparation und zum Transfer mikroskopischer Proben, Computerprogrammprodukt sowie mikroskopische Probe
KR102537699B1 (ko) * 2017-12-26 2023-05-26 삼성전자주식회사 반도체 장치의 검사 방법
US11177110B2 (en) * 2018-02-06 2021-11-16 Howard Hughes Medical Institute Volume scanning electron microscopy of serial thick tissue sections with gas cluster milling
US10811219B2 (en) * 2018-08-07 2020-10-20 Applied Materials Israel Ltd. Method for evaluating a region of an object
DE102018120630B3 (de) 2018-08-23 2019-10-31 Carl Zeiss Microscopy Gmbh Verfahren zum Bearbeiten eines Objekts und Programm zur Steuerung eines Partikelstrahlsystems
JP7305422B2 (ja) * 2019-05-13 2023-07-10 株式会社日立ハイテク パターン評価システム及びパターン評価方法
US11501951B1 (en) 2021-05-14 2022-11-15 Applied Materials Israel Ltd. X-ray imaging in cross-section using un-cut lamella with background material
EP4453654A1 (en) * 2021-12-20 2024-10-30 Carl Zeiss SMT GmbH Measurement method and apparatus for semiconductor features with increased throughput
US20230196189A1 (en) * 2021-12-20 2023-06-22 Carl Zeiss Smt Gmbh Measurement method and apparatus for semiconductor features with increased throughput
US12437965B1 (en) * 2022-08-01 2025-10-07 Mochil, Inc. Charged-particle beam microscope with differential vacuum pressures

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Also Published As

Publication number Publication date
EP2903773A4 (en) 2015-10-21
US9412560B2 (en) 2016-08-09
JP2015533256A (ja) 2015-11-19
JP6199979B2 (ja) 2017-09-20
EP2903773B1 (en) 2016-08-31
KR102039528B1 (ko) 2019-11-01
US20150243477A1 (en) 2015-08-27
TW201428834A (zh) 2014-07-16
TWI607498B (zh) 2017-12-01
WO2014055982A1 (en) 2014-04-10
EP2903773A1 (en) 2015-08-12
CN104822482A (zh) 2015-08-05
KR20150064190A (ko) 2015-06-10

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