TWI607450B - Shift register and gate driving circuit using the same - Google Patents
Shift register and gate driving circuit using the same Download PDFInfo
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
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Description
本發明係關於顯示器之相關技術,尤其是有關於一種移位暫存器與一種採用上述移位暫存器之閘極驅動電路。The present invention relates to related art of displays, and more particularly to a shift register and a gate drive circuit using the above shift register.
運用在顯示器中的閘極驅動電路乃是由多個移位暫存器所組成,每一移位暫存器用以輸出一閘極訊號,並透過此閘極訊號提供一脈衝來開啟對應列的畫素,以使該列畫素中的每一畫素皆能寫入所需的灰階值。The gate driving circuit used in the display is composed of a plurality of shift registers, each shift register is configured to output a gate signal, and a pulse is provided through the gate signal to turn on the corresponding column. The pixels are such that each pixel in the column of pixels can be written to the desired grayscale value.
然而,在傳統的移位暫存器電路架構下,當移位暫存器將其所提供的脈衝由高位準轉態為低位準時,卻常因位脈衝的下降時間(falling time)過長而導致畫素寫入錯誤的灰階值,進而影響了顯示品質,此缺點在高解析度的顯示器中尤其明顯。However, in the conventional shift register circuit architecture, when the shift register shifts the pulse supplied from the high level to the low level, the falling time of the bit pulse is often too long. Causes the pixels to write incorrect grayscale values, which in turn affects display quality. This disadvantage is especially noticeable in high-resolution displays.
本發明之一目的在提供一種移位暫存器,其可縮短其所提供之脈衝的下降時間。It is an object of the present invention to provide a shift register that can reduce the fall time of the pulses it provides.
本發明之另一目的在提供一種採用上述移位暫存器之閘極驅動電路。Another object of the present invention is to provide a gate driving circuit using the above shift register.
本發明提出一種移位暫存器,此移位暫存器包括有輸入訊號選擇電路、輸出電路、下拉電路與電壓抬升電路。輸入訊號選擇電路耦接一節點、第一訊號源、第二訊號源、第一輸入訊號源與第二輸入訊號源。輸出電路耦接上述節點、移位暫存器之輸出端與第一時脈訊號源。下拉電路耦接上述輸出端、第二時脈訊號源與參考電位源。電壓抬升電路耦接上述節點、上述輸出端、第一訊號源、第二訊號源、第三訊號源與第四訊號源。The invention provides a shift register comprising an input signal selection circuit, an output circuit, a pull-down circuit and a voltage boost circuit. The input signal selection circuit is coupled to a node, a first signal source, a second signal source, a first input signal source, and a second input signal source. The output circuit is coupled to the node, the output of the shift register, and the first clock signal source. The pull-down circuit is coupled to the output terminal, the second clock signal source and the reference potential source. The voltage boosting circuit is coupled to the node, the output terminal, the first signal source, the second signal source, the third signal source, and the fourth signal source.
本發明另提出一種閘極驅動電路,其包括有多個移位暫存器,每一移位暫存器又包括有輸入訊號選擇電路、輸出電路、下拉電路與電壓抬升電路。輸入訊號選擇電路耦接一節點,用以依據第一訊號源的訊號來決定是否將上述節點耦接至第一輸入訊號源,並用以依據第二訊號源的訊號來決定是否將上述節點耦接至第二輸入訊號源。輸出電路耦接上述節點與移位暫存器之輸出端,用以依據上述節點的電壓大小決定是否將第一時脈訊號源的訊號提供至上述輸出端。下拉電路耦接上述輸出端,用以依據第二時脈訊號源的訊號決定是否將上述輸出端耦接至參考電位源,其中第二時脈訊號源與第一時脈訊號源的訊號的脈衝致能時間互不重疊。電壓抬升電路耦接上述節點與上述輸出端,用以依據第一訊號源的訊號、第三訊號源的訊號與上述輸出端的電壓而決定是否提供上述節點第一耦合電壓,並用以依據第一訊號源的訊號、第三訊號源的訊號、第四訊號源的訊號、第二訊號源的訊號與上述輸出端的電壓來決定是否提供上述節點第二耦合電壓。The invention further provides a gate driving circuit comprising a plurality of shift registers, each shift register further comprising an input signal selection circuit, an output circuit, a pull-down circuit and a voltage boost circuit. The input signal selection circuit is coupled to a node for determining whether to connect the node to the first input signal source according to the signal of the first signal source, and configured to determine whether to connect the node according to the signal of the second signal source To the second input signal source. The output circuit is coupled to the output end of the node and the shift register for determining whether to provide the signal of the first clock signal source to the output terminal according to the voltage of the node. The pull-down circuit is coupled to the output end for determining whether to connect the output end to the reference potential source according to the signal of the second clock signal source, wherein the signal of the second clock signal source and the signal of the first clock signal source The enabling times do not overlap each other. The voltage boosting circuit is coupled to the node and the output end, and is configured to determine whether to provide the first coupling voltage of the node according to the signal of the first signal source, the signal of the third signal source, and the voltage of the output terminal, and is configured to be based on the first signal The source signal, the signal of the third signal source, the signal of the fourth signal source, the signal of the second signal source and the voltage of the output terminal determine whether to provide the second coupling voltage of the node.
本發明之移位暫存器在將其所提供的脈衝由高位準轉態為低位準之前,由於已先利用電壓抬升電路將上述節點(其可視為與移位暫存器中之驅動電晶體的閘極相同的節點)的電壓抬升至比傳統移位暫存器電路架構所採電壓更高的位準,讓移位暫存器的輸出端可以更快地透過驅動電晶體進行放電,進而縮短移位暫存器所提供之脈衝的下降時間。The shift register of the present invention prior to converting the pulse provided by the high level to the low level, since the node has been first used by the voltage boosting circuit (which can be regarded as the driving transistor in the shift register) The voltage of the same gate of the gate is raised to a higher level than that of the conventional shift register circuit structure, so that the output of the shift register can be discharged faster through the driving transistor. Shorten the fall time of the pulse provided by the shift register.
為了讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。The above and other objects, features and advantages of the present invention will become more <RTIgt;
為使讀者易於了解,以下將先說明本發明之閘極驅動電路。圖1即為依照本發明一實施例之移位暫存器的電路圖,如圖1所示,此閘極驅動電路乃是由多個移位暫存器所組成,於圖1中僅繪示其中的第n-3級移位暫存器至第n+3級移位暫存器,並僅繪示第n級移位暫存器的完整耦接方式,而其餘移位暫存器的完整耦接方式當可依照以下之說明類比推之,在此便不再贅述。For the sake of easy understanding of the reader, the gate driving circuit of the present invention will be described below. 1 is a circuit diagram of a shift register according to an embodiment of the present invention. As shown in FIG. 1, the gate drive circuit is composed of a plurality of shift registers, which are only shown in FIG. The n-3th shift register to the n+3 shift register, and only the complete coupling mode of the nth shift register is shown, and the rest of the shift register The complete coupling method can be analogized according to the following description, and will not be described here.
如圖1所示,第n-2級移位暫存器、第n級移位暫存器與第n+2級移位暫存器皆是接收時脈訊號CK1與CK3,而第n-3級移位暫存器、第n-1級移位暫存器、第n+1級移位暫存器與第n+3級移位暫存器皆是接收時脈訊號CK2與CK4。也就是說,奇數級的移位暫存器皆是接收時脈訊號CK1與CK3,而偶數級的移位暫存器皆是接收時脈訊號CK2與CK4;或者,奇數級的移位暫存器皆是接收時脈訊號CK2與CK4,而偶數級的移位暫存器皆是接收時脈訊號CK1與CK3。As shown in FIG. 1, the n-2th shift register, the nth shift register, and the n+2 shift register are all receiving clock signals CK1 and CK3, and the n-th The 3-level shift register, the n-1th shift register, the n+1th shift register, and the n+3 shift register are all receiving clock signals CK2 and CK4. That is to say, the odd-level shift registers are all receiving the clock signals CK1 and CK3, and the even-stage shift registers are receiving the clock signals CK2 and CK4; or, the odd-level shifts are temporarily stored. The receivers receive the clock signals CK2 and CK4, and the even-stage shift registers are the receive clock signals CK1 and CK3.
第n-3級移位暫存器至第n+3級移位暫存器分別用以輸出閘極訊號G[n-3]~G[n+3]。此外,每一級移位暫存器還接收了前二級移位暫存器所輸出的閘極訊號與後二級移位暫存器所輸出的閘極訊號。以第n級移位暫存器為例,其還接收了第n-2級移位暫存器所輸出的閘極訊號G[n-2]、第n-1級移位暫存器所輸出的閘極訊號G[n-1]、第n+1級移位暫存器所輸出的閘極訊號G[n+1]與第n+2級移位暫存器所輸出的閘極訊號G[n+2]。The n-3th shift register to the n+3 shift register are respectively used to output the gate signal G[n-3]~G[n+3]. In addition, each stage shift register also receives the gate signal output by the previous two-stage shift register and the gate signal output by the second stage shift register. Taking the nth stage shift register as an example, it also receives the gate signal G[n-2] outputted by the n-2th stage shift register, and the n-1th stage shift register. The output gate signal G[n-1], the gate signal G[n+1] outputted by the n+1th stage shift register, and the gate outputted by the n+2 stage shift register Signal G[n+2].
接下來將說明上述之移位暫存器的實現方式,並以第n級移位暫存器來舉例說明之。圖2即為依照本發明一實施例之移位暫存器的電路圖,如圖2所示,此移位暫存器包括有輸入訊號選擇電路110、輸出電路120、下拉電路130、電壓抬升電路140、穩壓電路150與穩壓控制電路160。輸入訊號選擇電路110耦接節點Q、第一訊號源、第二訊號源、第一輸入訊號源與第二輸入訊號源。此輸入訊號選擇電路110用以依據第一訊號源的訊號來決定是否將節點Q耦接至第一輸入訊號源,並用以依據第二訊號源的訊號來決定是否將節點Q耦接至第二輸入訊號源。在此例中,第一訊號源用以提供第n-2級移位暫存器所輸出的閘極訊號G[n-2],第二訊號源用以提供第n+2級移位暫存器所輸出的閘極訊號G[n+2],第一輸入訊號源用以提供高準位電壓U2D,此高準位電壓U2D例如是電源電壓VDD,而第二輸入訊號源用以提供低準位電壓D2U,此低準位電壓D2U例如是參考電位VSS。Next, the implementation of the shift register described above will be explained, and the n-th shift register will be exemplified. 2 is a circuit diagram of a shift register according to an embodiment of the present invention. As shown in FIG. 2, the shift register includes an input signal selection circuit 110, an output circuit 120, a pull-down circuit 130, and a voltage boost circuit. 140, the voltage stabilizing circuit 150 and the voltage stabilizing control circuit 160. The input signal selection circuit 110 is coupled to the node Q, the first signal source, the second signal source, the first input signal source, and the second input signal source. The input signal selection circuit 110 is configured to determine whether to connect the node Q to the first input signal source according to the signal of the first signal source, and to determine whether to connect the node Q to the second according to the signal of the second signal source. Enter the source of the signal. In this example, the first signal source is used to provide the gate signal G[n-2] outputted by the n-2th stage shift register, and the second signal source is used to provide the n+2 stage shift. The gate signal G[n+2] outputted by the memory, the first input signal source is used to provide a high level voltage U2D, for example, the power supply voltage VDD, and the second input signal source is used to provide The low level voltage D2U, for example, is the reference potential VSS.
輸出電路120耦接節點Q、移位暫存器之輸出端170與第一時脈訊號源,此輸出電路120用以依據節點Q的電壓大小決定是否將第一時脈訊號源的訊號提供至上述輸出端170。在此例中,第一時脈訊號源用以提供時脈訊號CK3。下拉電路130耦接上述輸出端170、第二時脈訊號源與參考電位源,此下拉電路130用以依據第二時脈訊號源的訊號決定是否將上述輸出端170耦接至參考電位源。在此例中,第二時脈訊號源用以提供時脈訊號CK1,而參考電位源用以提供參考電位VSS。此外,時脈訊號CK1與CK3的脈衝致能時間互不重疊。The output circuit 120 is coupled to the node Q, the output terminal 170 of the shift register, and the first clock signal source. The output circuit 120 is configured to determine whether to provide the signal of the first clock signal source according to the voltage of the node Q. The above output terminal 170. In this example, the first clock signal source is used to provide the clock signal CK3. The pull-down circuit 130 is coupled to the output terminal 170, the second clock signal source and the reference potential source. The pull-down circuit 130 is configured to determine whether to connect the output terminal 170 to the reference potential source according to the signal of the second clock signal source. In this example, the second clock signal source is used to provide the clock signal CK1, and the reference potential source is used to provide the reference potential VSS. In addition, the pulse enable times of the clock signals CK1 and CK3 do not overlap each other.
電壓抬升電路140耦接節點Q、上述輸出端170、第一訊號源、第二訊號源、第三訊號源與第四訊號源,此電壓抬升電路140用以依據第一訊號源的訊號、第三訊號源的訊號與輸出端170的電壓而決定是否提供節點Q第一耦合電壓,並用以依據第一訊號源的訊號、第三訊號源的訊號、第四訊號源的訊號、第二訊號源的訊號與輸出端170的電壓來決定是否提供節點Q第二耦合電壓。如同前述,第一訊號源用以提供第n-2級移位暫存器所輸出的閘極訊號G[n-2],第二訊號源用以提供第n+2級移位暫存器所輸出的閘極訊號G[n+2]。此外,在此例中,第三訊號源用以提供第n-1級移位暫存器所輸出的閘極訊號G[n-1],而第四訊號源用以提供第n+1級移位暫存器所輸出的閘極訊號G[n+1]。The voltage boosting circuit 140 is coupled to the node Q, the output terminal 170, the first signal source, the second signal source, the third signal source, and the fourth signal source. The voltage boosting circuit 140 is configured to use the signal according to the first signal source. The signal of the third signal source and the voltage of the output terminal 170 determine whether to provide the first coupling voltage of the node Q, and are used according to the signal of the first signal source, the signal of the third signal source, the signal of the fourth signal source, and the second signal source. The signal and the voltage of the output terminal 170 determine whether to provide the second coupling voltage of the node Q. As described above, the first signal source is used to provide the gate signal G[n-2] outputted by the n-2th stage shift register, and the second signal source is used to provide the n+2th stage shift register. The gate signal G[n+2] is output. In addition, in this example, the third signal source is used to provide the gate signal G[n-1] outputted by the n-1th stage shift register, and the fourth signal source is used to provide the n+1th level. The gate signal G[n+1] output by the shift register.
穩壓電路150耦接節點Q、輸出端170、穩壓控制訊號源與參考電位源,此穩壓電路150用以依據穩壓控制訊號源的訊號決定是否將節點Q與輸出端170耦接至參考電位源。如同前述,參考電位源用以提供參考電位VSS。此外,在此例中,穩壓控制訊號源用以提供穩壓控制訊號P[n]。穩壓控制電路160耦接穩壓電路150、第一時脈訊號源與節點Q,此穩壓控制電路160用以依據第一時脈訊號源的訊號與節點Q的電壓大小來提供穩壓控制訊號源。如同前述,第一時脈訊號源用以提供時脈訊號CK3,而穩壓控制訊號源用以提供穩壓控制訊號P[n]。The voltage stabilizing circuit 150 is coupled to the node Q, the output terminal 170, the voltage stabilizing control signal source and the reference potential source. The voltage stabilizing circuit 150 is configured to determine whether to connect the node Q and the output terminal 170 according to the signal of the voltage stabilization control signal source. Reference potential source. As before, the reference potential source is used to provide the reference potential VSS. In addition, in this example, the regulated control signal source is used to provide the regulated control signal P[n]. The voltage regulator control circuit 160 is coupled to the voltage regulator circuit 150, the first clock signal source and the node Q. The voltage regulator control circuit 160 is configured to provide voltage regulation according to the signal of the first clock signal source and the voltage of the node Q. Signal source. As described above, the first clock signal source is used to provide the clock signal CK3, and the voltage stabilization control signal source is used to provide the voltage stabilization control signal P[n].
接下來將繼續說明輸入訊號選擇電路110、輸出電路120、下拉電路130、電壓抬升電路140、穩壓電路150與穩壓控制電路160的實現方式,請繼續參照圖2。輸入訊號選擇電路110包括有電晶體111與112。電晶體111的第一端耦接第一輸入訊號源,以接收第一輸入訊號源所提供的高準位電壓U2D。電晶體111的第二端耦接節點Q,以接收節點Q上的訊號Q[n]。而電晶體111的控制端耦接第一訊號源,以接收第一訊號源所提供的閘極訊號G[n-2]。電晶體112的第一端耦接第二輸入訊號源,以接收第二輸入訊號源所提供的低準位電壓D2U。電晶體112的第二端耦接節點Q,以接收節點Q上的訊號Q[n]。電晶體112的控制端耦接第二訊號源,以接收第二訊號源所提供的閘極訊號G[n+2]。Next, the implementation of the input signal selection circuit 110, the output circuit 120, the pull-down circuit 130, the voltage up circuit 140, the voltage stabilization circuit 150, and the voltage stabilization control circuit 160 will be further described. Please refer to FIG. The input signal selection circuit 110 includes transistors 111 and 112. The first end of the transistor 111 is coupled to the first input signal source to receive the high level voltage U2D provided by the first input signal source. The second end of the transistor 111 is coupled to the node Q to receive the signal Q[n] on the node Q. The control terminal of the transistor 111 is coupled to the first signal source to receive the gate signal G[n-2] provided by the first signal source. The first end of the transistor 112 is coupled to the second input signal source to receive the low level voltage D2U provided by the second input signal source. The second end of the transistor 112 is coupled to the node Q to receive the signal Q[n] on the node Q. The control end of the transistor 112 is coupled to the second signal source to receive the gate signal G[n+2] provided by the second signal source.
輸出電路120包括有電晶體121(其用以作為驅動電晶體)。電晶體121的第一端耦接第一時脈訊號源,以接收第一時脈訊號源所提供的時脈訊號CK3。電晶體121的第二端耦接輸出端170,而電晶體121的控制端耦接節點Q,以接收節點Q上的訊號Q[n]。下拉電路130包括有電晶體131。電晶體131的第一端耦接輸出端170,電晶體131的第二端耦接參考電位源,以接收參考電位源所提供的參考電位VSS,而電晶體131的控制端耦接第二時脈訊號源,以接收第二時脈訊號源所提供的時脈訊號CK1。The output circuit 120 includes a transistor 121 (which serves as a driving transistor). The first end of the transistor 121 is coupled to the first clock signal source to receive the clock signal CK3 provided by the first clock signal source. The second end of the transistor 121 is coupled to the output terminal 170, and the control end of the transistor 121 is coupled to the node Q to receive the signal Q[n] on the node Q. The pull-down circuit 130 includes a transistor 131. The first end of the transistor 131 is coupled to the output terminal 170, and the second end of the transistor 131 is coupled to the reference potential source to receive the reference potential VSS provided by the reference potential source, and the control end of the transistor 131 is coupled to the second terminal. The pulse signal source receives the clock signal CK1 provided by the second clock signal source.
電壓抬升電路140包括有電容141、電容142、電晶體143與電晶體144。電容141的第一端耦接節點Q,電容142的第一端耦接電容141的第二端,而電容142的第二端耦接輸出端170。電晶體143的第一端耦接第三訊號源,以接收第三訊號源所提供的閘極訊號G[n-1]。電晶體143的第二端耦接電容141的第二端,而電晶體143控制端耦接第一訊號源,以接收第一訊號源所提供的閘極訊號G[n-2]。電晶體144的第一端耦接第四訊號源,以接收第四訊號源所提供的閘極訊號G[n+1],電晶體144的第二端耦接電容141的第二端,而電晶體144的控制端耦接第二訊號源,以接收第二訊號源所提供的閘極訊號G[n+2]。The voltage boost circuit 140 includes a capacitor 141, a capacitor 142, a transistor 143, and a transistor 144. The first end of the capacitor 141 is coupled to the node Q, the first end of the capacitor 142 is coupled to the second end of the capacitor 141, and the second end of the capacitor 142 is coupled to the output end 170. The first end of the transistor 143 is coupled to the third signal source to receive the gate signal G[n-1] provided by the third signal source. The second end of the transistor 143 is coupled to the second end of the capacitor 141, and the control end of the transistor 143 is coupled to the first signal source to receive the gate signal G[n-2] provided by the first signal source. The first end of the transistor 144 is coupled to the fourth signal source to receive the gate signal G[n+1] provided by the fourth signal source, and the second end of the transistor 144 is coupled to the second end of the capacitor 141. The control end of the transistor 144 is coupled to the second signal source to receive the gate signal G[n+2] provided by the second signal source.
穩壓電路150包括有電晶體151與電晶體152。電晶體151的第一端耦接節點Q,以接收節點Q上的訊號Q[n]。電晶體151的第二端耦接參考電位源,以接收參考電位源所提供的參考電位VSS。而電晶體151的控制端耦接穩壓控制訊號源,以接收穩壓控制訊號源所提供的穩壓控制訊號P[n]。電晶體152的第一端耦接輸出端170,電晶體152的第二端耦接參考電位源,以接收參考電位源所提供的參考電位VSS,而電晶體152的控制端耦接穩壓控制訊號源,以接收穩壓控制訊號源所提供的穩壓控制訊號P[n]。穩壓控制電路160包括有電容161與電晶體162。電容161的第一端耦接第一時脈訊號源,以接收第一時脈訊號源所提供的時脈訊號CK3。電晶體162的第一端耦接電容161的第二端,並用以提供上述之穩壓控制訊號源。電晶體162的第二端耦接參考電位源,以接收參考電位源所提供的參考電位VSS。而電晶體162的控制端耦接節點Q,以接收節點Q上的訊號Q[n]。The voltage stabilizing circuit 150 includes a transistor 151 and a transistor 152. The first end of the transistor 151 is coupled to the node Q to receive the signal Q[n] on the node Q. The second end of the transistor 151 is coupled to the reference potential source to receive the reference potential VSS provided by the reference potential source. The control terminal of the transistor 151 is coupled to the voltage stabilization control signal source to receive the voltage regulation control signal P[n] provided by the voltage stabilization control signal source. The first end of the transistor 152 is coupled to the output terminal 170, and the second end of the transistor 152 is coupled to the reference potential source to receive the reference potential VSS provided by the reference potential source, and the control terminal of the transistor 152 is coupled to the voltage regulator control. The signal source receives the voltage regulation control signal P[n] provided by the voltage stabilization control signal source. The voltage stabilizing control circuit 160 includes a capacitor 161 and a transistor 162. The first end of the capacitor 161 is coupled to the first clock signal source to receive the clock signal CK3 provided by the first clock signal source. The first end of the transistor 162 is coupled to the second end of the capacitor 161 and configured to provide the voltage control signal source described above. The second end of the transistor 162 is coupled to the reference potential source to receive the reference potential VSS provided by the reference potential source. The control terminal of the transistor 162 is coupled to the node Q to receive the signal Q[n] on the node Q.
圖3為依照本發明一實施例之移位暫存器的訊號時序圖。在圖3中,標示與圖1、圖2中之標示相同者表示為相同的訊號。請同時參照圖2與圖3,在圖2的說明中,第一訊號源用以提供第n-2級移位暫存器所輸出的閘極訊號G[n-2],第二訊號源用以提供第n+2級移位暫存器所輸出的閘極訊號G[n+2],第三訊號源用以提供第n-1級移位暫存器所輸出的閘極訊號G[n-1],第四訊號源用以提供第n+1級移位暫存器所輸出的閘極訊號G[n+1],而藉由圖3所示之閘極訊號G[n-2]、G[n-1]、G[n+1]與G[n+2]的波形,可知第一訊號源、第二訊號源、第三訊號源與第四訊號源的訊號中各具有一脈衝,且第一訊號源與第三訊號源的訊號的脈衝致能時間有部分重疊,第二訊號源與第四訊號源的訊號的脈衝致能時間有部分重疊,第一訊號源與第三訊號源的訊號的脈衝致能時間皆不與第二訊號源與第四訊號源的訊號的脈衝致能時間重疊。FIG. 3 is a timing diagram of signals of a shift register according to an embodiment of the invention. In FIG. 3, the same reference numerals as those in FIGS. 1 and 2 are denoted as the same signals. Referring to FIG. 2 and FIG. 3 simultaneously, in the description of FIG. 2, the first signal source is used to provide the gate signal G[n-2] outputted by the n-2th stage shift register, and the second signal source The gate signal G[n+2] outputted by the n+2th stage shift register is provided, and the third signal source is used to provide the gate signal G outputted by the n-1th stage shift register. [n-1], the fourth signal source is used to provide the gate signal G[n+1] outputted by the n+1th stage shift register, and the gate signal G[n] shown in FIG. -2], G[n-1], G[n+1], and G[n+2] waveforms, which can be seen in the signals of the first signal source, the second signal source, the third signal source, and the fourth signal source. Each has a pulse, and the pulse enable time of the signal of the first signal source and the third signal source partially overlaps, and the pulse enable time of the signal of the second signal source and the fourth signal source partially overlaps, the first signal source The pulse enable time of the signal with the third signal source does not overlap with the pulse enable time of the signals of the second signal source and the fourth signal source.
請再同時參照圖2與圖3。以下將以圖3所示的七個階段(階段1~7)來說明圖2所示之移位暫存器的操作,並假設高準位電壓U2D的位準、各時脈訊號中的脈衝的高位準與各閘極訊號中的脈衝的高位準皆為電源電壓VDD的位準,而低準位電壓D2U的位準、各時脈訊號中的脈衝的低位準與各閘極訊號中的脈衝的低位準皆為參考電位VSS的位準。Please refer to FIG. 2 and FIG. 3 at the same time. The operation of the shift register shown in FIG. 2 will be described in the following seven stages (stages 1 to 7) shown in FIG. 3, and the level of the high level voltage U2D and the pulse in each clock signal are assumed. The high level and the high level of the pulse in each gate signal are the level of the power supply voltage VDD, and the level of the low level voltage D2U, the low level of the pulse in each clock signal, and the position of each gate signal The low level of the pulse is the level of the reference potential VSS.
在階段1中,電晶體112、144、151與152皆呈現關閉(turned off)狀態,而電晶體111、121、143、162與131皆呈現導通(turned on)狀態。此時,訊號Q[n]的電壓大小為 ,其中 為電晶體111的臨界電壓,而訊號R[n]與閘極訊號G[n]的電壓大小皆為 。在階段2中,電晶體111、112、144、151與152皆呈現關閉狀態,而電晶體121、143、162與131皆呈現導通狀態。此時,訊號Q[n]的電壓大小為 ,其中 為電壓抬升電路140提供給節點Q的第一耦合電壓。而訊號R[n]的電壓大小為 ,其中 為電晶體143的臨界電壓。至於閘極訊號G[n]的電壓大小,則為 。由上述可知,在閘極訊號G[n]的脈衝產生之前,電壓抬升電路140便已將節點Q耦合至更高的電位,藉此提高電晶體121的導通程度,進而能夠縮短閘極訊號G[n]的脈衝的上升時間(rising time)。 In phase 1, transistors 112, 144, 151, and 152 all assume a turned off state, while transistors 111, 121, 143, 162, and 131 all assume a turned on state. At this time, the voltage of the signal Q[n] is ,among them The threshold voltage of the transistor 111, and the voltages of the signal R[n] and the gate signal G[n] are both . In phase 2, transistors 111, 112, 144, 151, and 152 all assume a closed state, while transistors 121, 143, 162, and 131 all assume a conducting state. At this time, the voltage of the signal Q[n] is ,among them The first coupling voltage is supplied to the node Q for the voltage boosting circuit 140. The voltage of the signal R[n] is ,among them It is the threshold voltage of the transistor 143. As for the voltage of the gate signal G[n], . As can be seen from the above, before the pulse of the gate signal G[n] is generated, the voltage boosting circuit 140 has coupled the node Q to a higher potential, thereby increasing the conduction degree of the transistor 121, thereby shortening the gate signal G. The rising time of the pulse of [n].
在階段3中,電晶體111、112、143、144、151、152與131皆呈現關閉狀態,而電晶體162與121皆呈現導通狀態。此時,訊號Q[n]的電壓大小為 ,其中 為電壓抬升電路140提供給節點Q的第二耦合電壓,而閘極訊號G[n]的電壓大小為 。由上述可知,在閘極訊號G[n]的脈衝由高電位轉態至低電位之前,電壓抬升電路140便已將節點Q耦合至比階段2時更高的電位,藉此再進一步提高電晶體121的導通程度,進而能夠縮短閘極訊號G[n]的脈衝的下降時間。 In phase 3, transistors 111, 112, 143, 144, 151, 152, and 131 all assume a closed state, while transistors 162 and 121 both assume a conducting state. At this time, the voltage of the signal Q[n] is ,among them The second coupling voltage is supplied to the node Q for the voltage boosting circuit 140, and the voltage of the gate signal G[n] is . As can be seen from the above, before the pulse of the gate signal G[n] transitions from the high potential to the low potential, the voltage boost circuit 140 has coupled the node Q to a higher potential than that of the phase 2, thereby further increasing the power. The degree of conduction of the crystal 121 can further shorten the fall time of the pulse of the gate signal G[n].
在階段4中,電晶體111、112、143、144、151、152與131皆呈現關閉狀態,而電晶體121與162皆呈現導通狀態。此時,訊號Q[n]的電壓大小為 ,而閘極訊號G[n]的電壓大小為 。在階段5中,電晶體111、143、121、162、151與152皆呈現關閉狀態,而電晶體112、144與131皆呈現導通狀態。此時,訊號Q[n]、訊號R[n]與閘極訊號G[n]的電壓大小皆為 。在階段6中,由於各電晶體皆呈現關閉狀態,因此移位暫存器沒有動作。在階段7中,電晶體111、112、143、144、121、162與131皆呈現關閉狀態,而電晶體151與152皆呈現導通狀態。此時,訊號Q[n]與閘極訊號G[n]的電壓大小皆為 。 In phase 4, transistors 111, 112, 143, 144, 151, 152, and 131 all assume a closed state, while transistors 121 and 162 both assume a conducting state. At this time, the voltage of the signal Q[n] is And the voltage of the gate signal G[n] is . In phase 5, transistors 111, 143, 121, 162, 151, and 152 all assume a closed state, while transistors 112, 144, and 131 all assume a conducting state. At this time, the voltages of the signal Q[n], the signal R[n] and the gate signal G[n] are both . In phase 6, since each transistor is in a closed state, the shift register has no action. In phase 7, transistors 111, 112, 143, 144, 121, 162, and 131 all assume a closed state, while transistors 151 and 152 both assume a conducting state. At this time, the voltages of the signal Q[n] and the gate signal G[n] are both .
此外,由上述教示可知,圖2所示之移位暫存器中的穩壓電路150與穩壓控制電路160這二者皆可依照實際的電路設計需求而選擇性地決定是否採用。另外,儘管依據上述圖2、圖3所示實施方式的說明,可以得知對應的閘極驅動電路乃是自閘極訊號G[n-2]至G[n+2]來依序提供脈衝,因此這個閘極驅動電路乃是採用正向掃描的方式來驅動顯示器中的各閘極線(gate line),然此並非用以限制本發明,上述這個閘極驅動電路也是可以採用反向掃描(其與正向掃描的方向相反)的方式來驅動顯示器中的各閘極線,只要將圖2所示之閘極訊號G[n-2]與G[n+2]的耦接關係對調,並將閘極訊號G[n-1]與G[n+1]的耦接關係對調,就可以做到反向掃描。In addition, as can be seen from the above teachings, both the voltage stabilizing circuit 150 and the voltage stabilizing control circuit 160 in the shift register shown in FIG. 2 can selectively determine whether to adopt according to actual circuit design requirements. In addition, although according to the description of the embodiment shown in FIG. 2 and FIG. 3, it can be known that the corresponding gate driving circuit sequentially supplies pulses from the gate signals G[n-2] to G[n+2]. Therefore, the gate driving circuit uses forward scanning to drive the gate lines in the display. However, this is not intended to limit the present invention. The gate driving circuit can also use reverse scanning. (which is opposite to the direction of the forward scan) to drive each gate line in the display, as long as the coupling relationship between the gate signal G[n-2] and G[n+2] shown in Figure 2 is reversed. And reverse-coupling can be done by swapping the coupling relationship between the gate signal G[n-1] and G[n+1].
綜上所述,本發明之移位暫存器在將其所提供的脈衝由高位準轉態為低位準之前,由於已先利用電壓抬升電路將上述節點(其可視為與移位暫存器中之驅動電晶體的閘極相同的節點)的電壓抬升至比傳統移位暫存器電路架構所採電壓更高的位準,讓移位暫存器的輸出端可以更快地透過驅動電晶體進行放電,進而縮短移位暫存器所提供之脈衝的下降時間。In summary, the shift register of the present invention uses the voltage boost circuit to first view the node (which can be regarded as a shift register) before the pulse provided by the shift register is changed from the high level to the low level. The voltage of the same gate of the driving transistor is raised to a higher level than that of the conventional shift register circuit architecture, so that the output of the shift register can be driven faster. The crystal is discharged, thereby shortening the fall time of the pulse provided by the shift register.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何熟習此技術者,在不脫離本發明之精神和範圍內,當可做些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any one skilled in the art can make some modifications and retouchings without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
110‧‧‧輸入訊號選擇電路110‧‧‧Input signal selection circuit
111、112、121、131、143、144、151、152、162‧‧‧電晶體111, 112, 121, 131, 143, 144, 151, 152, 162‧‧‧ transistors
141、142、161‧‧‧電容141, 142, 161‧‧ ‧ capacitor
120‧‧‧輸出電路120‧‧‧Output circuit
130‧‧‧下拉電路130‧‧‧ Pull-down circuit
140‧‧‧電壓抬升電路140‧‧‧Voltage up circuit
150‧‧‧穩壓電路150‧‧‧Variable circuit
160‧‧‧穩壓控制電路160‧‧‧Regulator control circuit
170‧‧‧輸出端170‧‧‧output
CK1、CK2、CK3、CK4‧‧‧時脈訊號CK1, CK2, CK3, CK4‧‧‧ clock signal
D2U‧‧‧低準位電壓D2U‧‧‧ low level voltage
G[n-3]、G[n-2]、G[n-1]、G[n]、G[n+1]、G[n+2]、G[n+3]‧‧‧閘極訊號G[n-3], G[n-2], G[n-1], G[n], G[n+1], G[n+2], G[n+3]‧‧‧ Extreme signal
P[n]、Q[n]、R[n]‧‧‧訊號P[n], Q[n], R[n]‧‧‧ signals
Q‧‧‧節點Q‧‧‧ node
U2D‧‧‧高準位電壓U2D‧‧‧ high level voltage
VSS‧‧‧參考電位VSS‧‧‧ reference potential
圖1為依照本發明一實施例之閘極驅動電路的電路方塊圖; 圖2為依照本發明一實施例之移位暫存器的電路圖; 圖3為依照本發明一實施例之移位暫存器的訊號時序圖。1 is a circuit block diagram of a gate driving circuit in accordance with an embodiment of the present invention; FIG. 2 is a circuit diagram of a shift register in accordance with an embodiment of the present invention; FIG. 3 is a shifting diagram in accordance with an embodiment of the present invention. The signal timing diagram of the register.
110‧‧‧輸入訊號選擇電路 110‧‧‧Input signal selection circuit
111、112、121、131、143、144、151、152、162‧‧‧電晶體 111, 112, 121, 131, 143, 144, 151, 152, 162‧‧‧ transistors
141、142、161‧‧‧電容 141, 142, 161‧‧ ‧ capacitor
120‧‧‧輸出電路 120‧‧‧Output circuit
130‧‧‧下拉電路 130‧‧‧ Pull-down circuit
140‧‧‧電壓抬升電路 140‧‧‧Voltage up circuit
150‧‧‧穩壓電路 150‧‧‧Variable circuit
160‧‧‧穩壓控制電路 160‧‧‧Regulator control circuit
170‧‧‧輸出端 170‧‧‧output
CK1、CK3‧‧‧時脈訊號 CK1, CK3‧‧‧ clock signal
D2U‧‧‧低準位電壓 D2U‧‧‧ low level voltage
G[n-2]、G[n-1]、G[n]、G[n+1]、G[n+2]‧‧‧閘極訊號 G[n-2], G[n-1], G[n], G[n+1], G[n+2]‧‧‧ gate signal
P[n]、Q[n]、R[n]‧‧‧訊號 P[n], Q[n], R[n]‧‧‧ signals
Q‧‧‧節點 Q‧‧‧ node
U2D‧‧‧高準位電壓 U2D‧‧‧ high level voltage
VSS‧‧‧參考電位 VSS‧‧‧ reference potential
Claims (18)
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TW105144297A TWI607450B (en) | 2016-12-30 | 2016-12-30 | Shift register and gate driving circuit using the same |
CN201710092047.9A CN106782280B (en) | 2016-12-30 | 2017-02-21 | Shift register and grid drive circuit |
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TW105144297A TWI607450B (en) | 2016-12-30 | 2016-12-30 | Shift register and gate driving circuit using the same |
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CN106782280A (en) | 2017-05-31 |
CN106782280B (en) | 2020-10-02 |
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