TWI605534B - Substrate holding/rotating device, substrate processing apparatus including the same, and substrate processing method - Google Patents

Substrate holding/rotating device, substrate processing apparatus including the same, and substrate processing method Download PDF

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TWI605534B
TWI605534B TW105131018A TW105131018A TWI605534B TW I605534 B TWI605534 B TW I605534B TW 105131018 A TW105131018 A TW 105131018A TW 105131018 A TW105131018 A TW 105131018A TW I605534 B TWI605534 B TW I605534B
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substrate
magnet
movable pin
open
movable
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TW201721788A (en
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蒲裕充
瀧昭彥
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思可林集團股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

基板保持旋轉裝置及具備其之基板處理裝置、暨基板處理方法 Substrate holding rotating device, substrate processing device therewith, and substrate processing method

本發明係關於一種基板保持旋轉裝置及具備其之基板處理裝置、以及基板處理方法。保持對象或處理對象之基板例如包含半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、場發射顯示器(Field Emission Display,FED)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、太陽能電池用基板等。 The present invention relates to a substrate holding and rotating device, a substrate processing device therewith, and a substrate processing method. The substrate to be held or processed includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for a disk, a substrate for a disk, and a disk for a magneto-optical disk. A substrate, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, or the like.

US2013/0152971 A1中揭示有一種旋轉式基板保持旋轉裝置,其具備:旋轉台,其可繞沿著鉛垂方向之旋轉軸線旋轉;旋轉驅動單元,其使旋轉台繞上述旋轉軸線旋轉;及複數根(例如4根)保持銷,其等配設於旋轉台,將基板自旋轉台表面隔開既定間隔地水平定位。 US2013/0152971 A1 discloses a rotary substrate holding and rotating device, comprising: a rotary table rotatable about a rotation axis along a vertical direction; a rotary drive unit that rotates the rotary table about the rotation axis; The roots (for example, four) hold pins, which are disposed on the turntable, and horizontally position the substrate from the surface of the turntable at a predetermined interval.

複數根保持銷包含相對於旋轉台不動之固定銷、及相對於旋轉台可動之可動銷。可動銷係可繞與其中心軸線同軸之旋轉軸線旋轉地設置,且具有用以抵接於基板之周端緣之抵接部。藉由抵接部之旋轉,而使抵接部於遠離旋轉軸線之較遠之開放位置與靠近旋轉軸線之保持位置之間移位。於抵接部之旋轉軸結合有銷驅動 用磁鐵。 The plurality of retaining pins include a fixed pin that is stationary with respect to the rotary table, and a movable pin that is movable relative to the rotary table. The movable pin is rotatably disposed about a rotation axis coaxial with the central axis thereof, and has an abutting portion for abutting against a peripheral end edge of the substrate. By the rotation of the abutting portion, the abutting portion is displaced between a distant open position away from the rotation axis and a holding position close to the rotation axis. a pin drive is coupled to the rotating shaft of the abutting portion Use a magnet.

可動銷之開關之切換係使用配置於旋轉台之下方之升降磁鐵而進行(磁鐵切換方式)。於升降磁鐵結合有磁鐵升降單元。於升降磁鐵位於既定之下位置時,升降磁鐵不與銷驅動用磁鐵對向,因此,不對可動銷作用將該可動銷朝其保持位置施壓之外力。因此,於升降磁鐵位於下位置時,可動銷保持於其開放位置。另一方面,於升降磁鐵位於既定之上位置時,藉由升降磁鐵與銷驅動用磁鐵之間之磁吸引力將可動銷保持於其保持位置。 Switching of the switch of the movable pin is performed using a lifting magnet disposed below the rotating table (magnet switching method). The lifting magnet is combined with a magnet lifting unit. When the lifting magnet is positioned below the predetermined position, the lifting magnet does not oppose the pin driving magnet, and therefore the movable pin does not apply pressure to the holding position. Therefore, when the lifting magnet is in the lower position, the movable pin is held in its open position. On the other hand, when the lifting magnet is positioned at a predetermined upper position, the movable pin is held at its holding position by the magnetic attraction between the lifting magnet and the pin driving magnet.

而且,上述基板保持旋轉裝置設於對基板逐片進行處理之單片式基板處理裝置,對藉由基板保持旋轉裝置而旋轉之基板之上表面自處理液噴嘴供給處理液(清洗藥液)。供給至基板之上表面之處理液受到基板之旋轉所產生之離心力之影響而朝向基板之周緣部流動。藉此,對基板之上表面之整個區域及基板之周端面進行液體處理。又,根據基板處理之種類,亦有亦欲對基板之下表面之周緣部進行液體處理之情形。 Further, the substrate holding and rotating device is provided in a one-chip substrate processing apparatus that processes the substrate one by one, and supplies the processing liquid (cleaning liquid) from the processing liquid nozzle to the upper surface of the substrate that is rotated by the substrate holding rotating device. The treatment liquid supplied to the upper surface of the substrate flows toward the peripheral portion of the substrate by the centrifugal force generated by the rotation of the substrate. Thereby, the entire area of the upper surface of the substrate and the peripheral end surface of the substrate are subjected to liquid treatment. Further, depending on the type of the substrate treatment, there is also a case where the peripheral portion of the lower surface of the substrate is also subjected to liquid treatment.

然而,於US2013/0152971 A1記載之構成中,於液體處理之期間,始終藉由複數根(例如4根)保持銷接觸支撐基板,因此,有於基板之周端面之保持銷之複數個部位之抵接位置處理液不流回而於基板之周緣部(基板之周端面及基板之下表面之周緣部)產生清洗殘留物之虞。若於使基板旋轉之期間使基板之接觸支撐位置變化,則可不產生清洗殘留物地清洗基板之周緣部,但為了實現此種接觸支撐位置之變化,而必須於基板之處理過程中僅選擇性地將設置於旋轉中之旋轉台之複數根保持銷中之一部分保持銷打開。然 而,於上述專利文獻1記載之磁鐵切換方式之基板保持旋轉裝置,用以切換可動銷之開關之升降磁鐵係非旋轉地設置,因此,無法僅選擇性地將設置於旋轉中之旋轉台之複數根保持銷中之一部分保持銷打開。假設於上述專利文獻1中於旋轉台之旋轉中將升降磁鐵配置於下位置而將2個可動銷之兩者設為開狀態,則有基板自處於旋轉狀態之旋轉台脫離之虞。 However, in the configuration described in US 2013/0152971 A1, the support substrate is always contacted by a plurality of (for example, four) holding pins during the liquid treatment, and therefore, the plurality of portions of the holding pin of the peripheral end surface of the substrate are The contact position treatment liquid does not flow back, and a cleaning residue is generated on the peripheral portion of the substrate (the peripheral end surface of the substrate and the peripheral portion of the lower surface of the substrate). If the contact support position of the substrate is changed during the rotation of the substrate, the peripheral portion of the substrate can be cleaned without causing cleaning residues. However, in order to achieve such a change in the contact support position, it is necessary to selectively select only during the processing of the substrate. One of the plurality of holding pins of the rotary table provided in the rotation is kept open. Of course Further, in the substrate holding and rotating device of the magnet switching method described in Patent Document 1, the lifting magnet for switching the switch of the movable pin is provided non-rotatably, and therefore, it is not possible to selectively selectively only provide the rotating table provided in the rotation. One of the plurality of retaining pins keeps the pin open. In the above-described Patent Document 1, when the lifting magnet is placed at the lower position and the two movable pins are both opened in the rotation of the rotary table, the substrate is separated from the rotating table.

因此,本發明之一目的在於提供一種磁鐵切換方式之基板保持旋轉裝置,其可良好地支撐基板並使其旋轉,且可於基板之旋轉中使可動銷對基板之接觸支撐位置變化。 Accordingly, it is an object of the present invention to provide a substrate holding and rotating device for magnet switching, which can support and rotate a substrate well, and can change a contact support position of a movable pin to a substrate during rotation of the substrate.

又,本發明之另一目的在於提供一種可不產生處理殘留物地良好對基板之周緣部進行處理的基板處理裝置及基板處理方法。 Further, another object of the present invention is to provide a substrate processing apparatus and a substrate processing method which can treat a peripheral portion of a substrate without causing a processing residue.

本發明提供一種基板保持旋轉裝置,其包含:旋轉台;旋轉驅動單元,其使上述旋轉台繞沿著鉛垂方向之旋轉軸線旋轉;可動銷,其係用以將基板水平地支撐之複數根可動銷,具有可移動地設置於遠離上述旋轉軸線之較遠之開放位置與靠近上述旋轉軸線之保持位置之間的支撐部,且以與上述旋轉台一同繞上述旋轉軸線旋轉之方式設置;施壓單元,其將各可動銷之上述支撐部施壓至上述保持位置;驅動用磁鐵,其對應於各可動銷而安裝;及開放磁鐵,其係以非旋轉狀態設置之開放磁鐵,形成伴隨上述旋轉台之旋轉而旋轉之各可動銷能夠通過之既定之磁場產生區域且為集中於上述旋轉台之旋轉方向且以僅供與複數根可動銷中之一部分可動銷對應之驅動用磁鐵能夠通過之方式設置的磁場產生區域,對通過該磁場產生區域之上述可動銷之驅動用磁鐵賦予斥力或吸引 力,於由上述施壓單元施壓至上述保持位置之該可動銷之上述支撐部產生抵抗該施壓力而朝向上述開放位置之力。 The present invention provides a substrate holding and rotating device comprising: a rotary table; a rotary drive unit that rotates the rotary table about a rotation axis along a vertical direction; and a movable pin that is used to support the substrate horizontally a movable pin having a support portion movably disposed between a distant open position away from the rotation axis and a holding position close to the rotation axis, and being disposed to rotate around the rotation axis together with the rotary table; a pressing unit that presses the support portion of each movable pin to the holding position; a driving magnet that is attached to each movable pin; and an open magnet that is an open magnet that is provided in a non-rotating state, and is formed Each of the movable pins that rotates by the rotation of the rotating table can pass through the predetermined magnetic field generating region and can be passed through the driving magnet concentrated in the rotating direction of the rotating table and only corresponding to one of the plurality of movable pins. a magnetic field generating region provided in a manner, and giving a repulsion to the driving magnet of the movable pin passing through the magnetic field generating region Or attract The force acts on the support portion of the movable pin that is pressed by the pressure applying unit to the holding position to a force that is directed toward the open position against the pressing force.

根據該構成,於旋轉台設置有複數根可動銷,各可動銷具有可移動地設置於開放位置與保持位置之間的支撐部。各可動銷之支撐部由施壓單元施壓至保持位置。 According to this configuration, the rotary table is provided with a plurality of movable pins, and each of the movable pins has a support portion that is movably provided between the open position and the holding position. The support portion of each movable pin is pressed by the pressure applying unit to the holding position.

又,於基板保持旋轉裝置,以非旋轉狀態設置有開放磁鐵。開放磁鐵係僅對與伴隨旋轉台之旋轉而旋轉之複數根可動銷中通過集中設置於旋轉台之旋轉方向上之磁場產生區域之可動銷對應的驅動用磁鐵產生斥力,而不對與未通過該磁場產生區域之可動銷對應之驅動用磁鐵賦予斥力或吸引力。該磁場產生區域係以僅供與複數根可動銷中之一部分可動銷對應之驅動用磁鐵能夠通過之方式設置。 Further, the rotating device is held on the substrate, and an open magnet is provided in a non-rotating state. The open magnet system generates a repulsive force only for the driving magnet corresponding to the movable pin of the magnetic field generating region that is collectively provided in the rotating direction of the rotating table among the plurality of movable pins that rotate in association with the rotation of the rotating table, and does not pass the The driving magnet corresponding to the movable pin in the magnetic field generating region imparts a repulsive force or an attractive force. The magnetic field generating region is provided so as to be able to pass only the driving magnet corresponding to one of the plurality of movable pins.

於由開放磁鐵賦予斥力或吸引力之可動銷(通過磁場產生區域之可動銷),於該可動銷之支撐部產生使之抵抗該施壓力而朝向上述開放位置之力。藉此,可緩和該可動銷對基板之周緣部之推壓力。此時,若產生於可動銷之支撐部的使之朝向開放位置之力超過超出來自施壓單元之施壓力之斥力或吸引力,則於基板之周緣部與可動銷之支撐部之間形成間隙,其結果,支撐部不支撐基板。又,伴隨因旋轉台之旋轉所致之各可動銷之相位變化而依次調換通過磁場產生區域之可動銷。藉此,可伴隨旋轉台之旋轉而使可動銷對基板之接觸支撐位置變化。可使基板之接觸支撐位置變化。 A movable pin (a movable pin that passes through the magnetic field generating region) that imparts a repulsive force or an attractive force to the open magnet generates a force that is directed toward the open position against the pressing force at the support portion of the movable pin. Thereby, the pressing force of the movable pin to the peripheral edge portion of the substrate can be alleviated. At this time, if the force generated in the support portion of the movable pin toward the open position exceeds the repulsive force or attractive force exceeding the pressing force from the pressing unit, a gap is formed between the peripheral portion of the substrate and the support portion of the movable pin. As a result, the support portion does not support the substrate. Further, the movable pin passing through the magnetic field generating region is sequentially switched in accordance with the phase change of each of the movable pins due to the rotation of the rotary table. Thereby, the contact support position of the movable pin to the substrate can be changed in accordance with the rotation of the turntable. The contact support position of the substrate can be changed.

另一方面,未由開放磁鐵賦予斥力及吸引力之可動銷(未通過磁場產生區域之可動銷)係其支撐部保持於開放位置。藉此,可藉由該可動銷支撐基板之周緣部。藉此,可良好地支撐基板 並使其旋轉。 On the other hand, a movable pin (a movable pin that does not pass through the magnetic field generating region) that does not impart a repulsive force and an attractive force by the open magnet holds the support portion at the open position. Thereby, the peripheral edge portion of the substrate can be supported by the movable pin. Thereby, the substrate can be well supported And make it rotate.

根據以上情況,可提供一種磁鐵切換方式之基板保持旋轉裝置,其可良好地支撐基板並使其旋轉,且可於基板之旋轉中使可動銷對基板之接觸支撐位置變化。 According to the above, it is possible to provide a substrate holding and rotating device for magnet switching, which can support and rotate the substrate well, and can change the contact support position of the movable pin to the substrate during the rotation of the substrate.

於本發明之一實施形態中,進而包含第1相對移動單元,該第1相對移動單元係以上述開放磁鐵與上述驅動用磁鐵之間之距離變化之方式,使上述開放磁鐵與上述旋轉台相對移動。 According to an embodiment of the present invention, the first relative moving unit further includes the open magnet and the rotating table such that a distance between the open magnet and the driving magnet changes. mobile.

根據該構成,藉由利用第1相對移動單元使開放磁鐵與旋轉台相對移動,而可使開放磁鐵與驅動用磁鐵之間之距離變化。因此,藉由使開放磁鐵與旋轉台相對移動,而可對在各驅動用磁鐵通過之區域產生磁場產生區域之狀態與不產生該磁場產生區域之狀態進行切換。 According to this configuration, the distance between the open magnet and the driving magnet can be changed by relatively moving the open magnet and the rotating table by the first relative moving means. Therefore, by moving the open magnet and the rotating table relatively, it is possible to switch between the state in which the magnetic field generating region is generated in the region through which the respective driving magnets pass and the state in which the magnetic field generating region is not generated.

又,上述第1相對移動單元亦可使上述開放磁鐵與上述旋轉台於在各驅動用磁鐵通過之區域形成上述磁場產生區域之第1位置、與在各驅動用磁鐵通過之區域不形成上述磁場產生區域之第2位置之間相對移動。 Further, the first relative moving means may cause the open magnet and the rotating table to form the magnetic field generating region at a first position in a region where each driving magnet passes, and the magnetic field does not form in a region where each driving magnet passes Relative movement between the second positions of the generation regions.

根據該構成,於開放磁鐵與旋轉台之相對位置位於第1位置之狀態下,可自開放磁鐵對通過磁場產生區域之可動銷賦予斥力或吸引力,而可於基板之旋轉中使可動銷對基板之接觸支撐位置變化。另一方面,於開放磁鐵與旋轉台之相對位置位於第2位置之狀態下,於各驅動用磁鐵通過之區域不產生磁場產生區域,因此,無法於基板之旋轉中使可動銷對基板之接觸支撐位置變化。 According to this configuration, in a state where the relative position of the open magnet and the turntable is at the first position, the repulsive force or the attraction force can be applied to the movable pin passing through the magnetic field generating region from the open magnet, and the movable pin pair can be made in the rotation of the substrate. The contact support position of the substrate changes. On the other hand, in a state where the relative position of the open magnet and the turntable is at the second position, no magnetic field generation region is generated in the region where the respective driving magnets pass, and therefore, the movable pin cannot be brought into contact with the substrate during the rotation of the substrate. Support position changes.

又,亦可為,於上述開放磁鐵與上述旋轉台位於上述第1位置之狀態下,上述可動銷之上述支撐部配置於上述開放位置 與上述保持位置之間之中間位置。 Moreover, in a state in which the open magnet and the turntable are located at the first position, the support portion of the movable pin may be disposed in the open position. An intermediate position between the above holding positions.

根據該構成,於開放磁鐵與旋轉台之相對位置位於第1位置之狀態下,對通過磁場產生區域之可動銷賦予超過由施壓單元賦予之施壓力之斥力或吸引力。藉此,將可動銷之支撐部配置於開放位置與保持位置之間之中間位置。 According to this configuration, in the state where the relative position of the open magnet and the turntable is at the first position, the movable pin that passes through the magnetic field generating region is given a repulsive force or an attractive force that exceeds the pressure applied by the pressing unit. Thereby, the support portion of the movable pin is disposed at an intermediate position between the open position and the holding position.

又,上述施壓單元亦可包含封閉磁鐵,該封閉磁鐵於與各驅動用磁鐵之間賦予斥力或吸引力,而將各可動銷之上述支撐部施壓至上述保持位置。 Further, the pressing unit may include a closing magnet that applies a repulsive force or an attractive force to each of the driving magnets, and presses the supporting portion of each of the movable pins to the holding position.

根據該構成,藉由封閉磁鐵將各可動銷之支撐部施壓至保持位置。藉此,可簡單地實現將各可動銷之支撐部施壓至保持位置之構成。 According to this configuration, the support portion of each movable pin is pressed to the holding position by the closing magnet. Thereby, the configuration in which the support portions of the respective movable pins are pressed to the holding position can be easily realized.

又,亦可進而包含第2相對移動單元,該第2相對移動單元係使上述封閉磁鐵與上述旋轉台在上述封閉磁鐵於與上述驅動用磁鐵之間賦予上述斥力或上述吸引力之第3位置、和上述封閉磁鐵於與上述驅動用磁鐵之間不賦予上述斥力及上述吸引力之第4位置之間相對移動。 Furthermore, the second relative movement unit may further include a third position in which the closing magnet and the rotating table provide the repulsive force or the attraction force between the closing magnet and the driving magnet. And the closed magnet moves relative to the fourth position where the repulsive force and the attractive force are not provided between the driving magnet and the driving magnet.

根據該構成,藉由在第3位置與第4位置之間切換封閉磁鐵與旋轉台之相對位置,而可對各可動銷之支撐部施壓至保持位置之狀態與各可動銷之支撐部未施壓至保持位置之狀態進行切換。 According to this configuration, by switching the relative positions of the closing magnet and the rotating table between the third position and the fourth position, the supporting portion of each movable pin can be pressed to the holding position and the supporting portion of each movable pin is not Switch to the state of holding the position.

又,亦可為,上述開放磁鐵包含在上述旋轉台之圓周方向隔以間隔而設置之複數個開放磁鐵,形成於各驅動用磁鐵通過之區域之上述磁場產生區域為於上述旋轉台之旋轉方向上間斷之區域。 Further, the open magnet may include a plurality of open magnets provided at intervals in a circumferential direction of the turntable, and the magnetic field generating region formed in a region where each of the driving magnets passes may be a rotation direction of the turntable. The area of the upper break.

根據該構成,可將磁場產生區域設為於旋轉台之旋轉方向上間斷之區域,因此,可使設置於基板之周緣部之複數根可動銷中彼此不相鄰之可動銷同時受到來自開放磁鐵之斥力或吸引力。藉此,可將彼此不相鄰之可動銷同時設為非支撐狀態,換言之,可利用剩餘之可動銷支撐基板,因此,可於若干個可動銷解除基板之支撐之情形時更穩定地支撐基板並使其旋轉。 According to this configuration, the magnetic field generating region can be a region that is interrupted in the rotation direction of the turntable. Therefore, the movable pin that is not adjacent to each other among the plurality of movable pins provided on the peripheral edge portion of the substrate can be simultaneously received from the open magnet. Repulsive or attractive. Thereby, the movable pins that are not adjacent to each other can be simultaneously set to an unsupported state, in other words, the remaining movable pins can be used to support the substrate, and therefore, the substrate can be supported more stably when a plurality of movable pins release the support of the substrate. And make it rotate.

亦可為,上述可動銷包含:第1可動銷群,其包含至少3根可動銷;及第2可動銷群,其與第1可動銷群分開地設置,且包含至少3根可動銷;與所有之上述可動銷對應地安裝之上述驅動用磁鐵,係以具有於與沿著上述旋轉軸線之軸線正交之方向上彼此相同之磁極方向的方式設置,上述複數個上述開放磁鐵以如下方式配置,即,於與上述第1可動銷群對應之各驅動用磁鐵存在於上述磁場產生區域內之狀態下,與上述第2可動銷群對應之各驅動用磁鐵不存在於上述磁場產生區域內,且於與上述第2可動銷群對應之各驅動用磁鐵存在於磁場產生區域內之狀態下,與上述第1可動銷群對應之各驅動用磁鐵不存在於上述磁場產生區域內。 The movable pin may include: a first movable pin group including at least three movable pins; and a second movable pin group disposed separately from the first movable pin group and including at least three movable pins; All of the driving magnets that are mounted correspondingly to the movable pin are provided so as to have the same magnetic pole direction in a direction orthogonal to the axis of the rotation axis, and the plurality of the open magnets are arranged as follows In other words, in a state in which each of the driving magnets corresponding to the first movable pin group is present in the magnetic field generating region, each of the driving magnets corresponding to the second movable pin group does not exist in the magnetic field generating region. In a state in which the respective driving magnets corresponding to the second movable pin group are present in the magnetic field generating region, the respective driving magnets corresponding to the first movable pin group are not present in the magnetic field generating region.

根據該構成,於各第1可動銷群接觸支撐基板之周緣部之情形時,各第2可動銷群不參與基板之支撐。又,於各第2可動銷群接觸支撐基板之周緣部之情形時,各第1可動銷群不參與基板之支撐。因此,伴隨因旋轉台之旋轉所致之各可動銷之相位變化,而於由包含3根以上之可動銷之第1可動銷群支撐基板之狀態與由包含3根以上之可動銷之第2可動銷群支撐基板之狀態之間轉變。即,每當旋轉台旋轉一周時,於第1可動銷群與第2可動銷群之間複數次交換保持基板。 According to this configuration, when each of the first movable pin groups contacts the peripheral edge portion of the support substrate, each of the second movable pin groups does not participate in the support of the substrate. Further, when each of the second movable pin groups contacts the peripheral edge portion of the support substrate, each of the first movable pin groups does not participate in the support of the substrate. Therefore, the state in which the substrate is supported by the first movable pin group including three or more movable pins and the second one including the movable pin including three or more are accompanied by a change in the phase of each of the movable pins due to the rotation of the rotary table. The movable pin group supports a transition between states of the substrate. That is, each time the rotary table rotates one turn, the holding substrate is exchanged between the first movable pin group and the second movable pin group a plurality of times.

亦可為,上述第1可動銷群包含與上述第2可動銷群為相同數量之上述可動銷,上述第1及第2可動銷群係於上述旋轉台之圓周方向上交替地、且以各可動銷群中包含之複數根可動銷成為等間隔之方式配置,上述複數個開放磁鐵以與各可動銷群中包含之上述可動銷之數量相同之數量,於上述旋轉台之圓周方向等間隔地配置。 The first movable pin group may include the same number of the movable pins as the second movable pin group, and the first and second movable pin groups may be alternately arranged in a circumferential direction of the turntable. The plurality of movable pins included in the movable pin group are disposed at equal intervals, and the plurality of open magnets are equally spaced in the circumferential direction of the turntable in the same number as the number of the movable pins included in each of the movable pin groups Configuration.

根據該構成,第1及第2可動銷群於旋轉台之圓周方向上交替地配置,且以各可動銷群中包含之複數根可動銷成為等間隔之方式設置,因此,可於由3個以上之第1可動銷群支撐基板之狀態及由3個以上之第2可動銷群支撐基板之狀態之各狀態下藉由各可動銷群良好地支撐基板。 According to this configuration, the first and second movable pin groups are alternately arranged in the circumferential direction of the turntable, and the plurality of movable pins included in each of the movable pin groups are provided at equal intervals. Therefore, three The state of the first movable pin group supporting substrate and the state in which the substrate is supported by three or more second movable pin groups are supported by the respective movable pin groups.

又,由於複數個開放磁鐵以與各可動銷群中包含之上述可動銷之數量相同之數量於上述旋轉台之圓周方向等間隔地配置,故而可將藉由複數個開放磁鐵形成之磁場產生區域設為與各可動銷群中包含之可動銷對應之驅動用磁鐵同時通過般的形狀。 Further, since the plurality of open magnets are arranged at equal intervals in the circumferential direction of the turntable in the same number as the number of the movable pins included in each of the movable pin groups, the magnetic field generating region formed by the plurality of open magnets can be formed. It is assumed that the driving magnet corresponding to the movable pin included in each of the movable pin groups passes through the same shape at the same time.

上述旋轉台之旋轉速度及/或上述開放磁鐵之圓周方向長度,亦可以藉由1個上述開放磁鐵形成之上述磁場產生區域於上述旋轉台之圓周方向上與上述可動銷之圓周方向之配置間隔一致的方式設定。 The rotation speed of the rotating table and/or the circumferential length of the open magnet may be such that the magnetic field generating region formed by one of the open magnets is spaced apart from the circumferential direction of the movable pin in the circumferential direction of the rotating table. A consistent way to set.

根據該構成,藉由1個開放磁鐵形成之磁場產生區域於旋轉台之圓周方向上與可動銷之圓周方向之配置間隔一致,因此,可對設置於旋轉台之複數根可動銷之狀態逐個進行切換。 According to this configuration, the magnetic field generating region formed by one open magnet is aligned with the circumferential direction of the movable pin in the circumferential direction of the turntable. Therefore, the state of the plurality of movable pins provided on the rotary table can be performed one by one. Switch.

又,亦可進而包含屏蔽構件,該屏蔽構件係將藉由上述開放磁鐵產生之磁場與藉由上述封閉磁鐵產生之磁場之干涉予 以屏蔽。 Furthermore, the shielding member may further include a shielding member that interferes with a magnetic field generated by the open magnet and a magnetic field generated by the closed magnet. To shield.

根據該構成,可確實地防止藉由開放磁鐵產生之磁場與藉由封閉磁鐵產生之磁場之干涉。 According to this configuration, the interference between the magnetic field generated by the open magnet and the magnetic field generated by the closed magnet can be reliably prevented.

又,本發明提供一種基板處理裝置,其包含:上述基板保持旋轉裝置;及處理液供給單元,其對由上述基板保持旋轉裝置保持之基板之主面供給處理液。 Moreover, the present invention provides a substrate processing apparatus including: the substrate holding rotating device; and a processing liquid supply unit that supplies a processing liquid to a main surface of the substrate held by the substrate holding rotating device.

根據該構成,自處理液供給單元對基板之主面供給處理液。供給至基板之主面之處理液受到基板之旋轉所產生之離心力之影響而朝向基板之周緣部流動。藉此,利用處理液對基板之周緣部進行液體處理。於本發明中,可於基板之旋轉中使可動銷對基板之接觸支撐位置變化。因此,可不產生處理殘留物地良好地對基板之周緣部進行處理。 According to this configuration, the processing liquid is supplied from the processing liquid supply unit to the main surface of the substrate. The processing liquid supplied to the main surface of the substrate flows toward the peripheral portion of the substrate by the centrifugal force generated by the rotation of the substrate. Thereby, the peripheral portion of the substrate is subjected to liquid treatment using the treatment liquid. In the present invention, the contact support position of the movable pin to the substrate can be changed during the rotation of the substrate. Therefore, the peripheral portion of the substrate can be satisfactorily processed without generating a treatment residue.

又,亦可進而包含:第1相對移動單元,其使上述開放磁鐵與上述旋轉台於在各驅動用磁鐵通過之區域形成上述磁場產生區域之第1位置、與在各驅動用磁鐵通過之區域不形成上述磁場產生區域之第2位置之間相對移動;及控制單元,其對上述旋轉驅動單元、上述處理液供給單元及上述第1相對移動單元進行控制。於該情形時,上述控制單元亦可執行:旋轉台旋轉步驟,其使上述旋轉台繞上述旋轉軸線旋轉;處理液供給步驟,其對伴隨上述旋轉台之旋轉而旋轉之基板供給處理液;及開放磁鐵配置步驟,其與上述旋轉台旋轉步驟及上述處理液供給步驟並行地,將上述開放磁鐵與上述旋轉台之相對位置配置於上述第1位置。 Furthermore, the first relative movement unit may include a first position in which the open magnet and the rotating table form the magnetic field generating region in a region where each of the driving magnets passes, and an area through which each driving magnet passes. The relative movement between the second positions of the magnetic field generation regions is not formed, and the control unit controls the rotation drive unit, the processing liquid supply unit, and the first relative movement unit. In this case, the control unit may further perform a rotating table rotating step of rotating the rotating table about the rotation axis, and a processing liquid supply step of supplying the processing liquid to the substrate that rotates accompanying the rotation of the rotating table; The open magnet disposing step of disposing the relative position of the open magnet and the rotating table in the first position in parallel with the rotating table rotating step and the processing liquid supplying step.

根據該構成,對處於旋轉狀態之基板之主面供給處理液。供給至基板之主面之處理液受到基板之旋轉所產生之離心力之 影響而朝向基板之周緣部流動。藉此,利用處理液對基板之周緣部進行液體處理。 According to this configuration, the processing liquid is supplied to the main surface of the substrate in the rotated state. The processing liquid supplied to the main surface of the substrate is subjected to centrifugal force generated by the rotation of the substrate The effect flows toward the peripheral portion of the substrate. Thereby, the peripheral portion of the substrate is subjected to liquid treatment using the treatment liquid.

又,與旋轉台之旋轉及處理液之供給並行地,將開放磁鐵與旋轉台之相對位置配置於在各驅動用磁鐵通過之區域形成磁場產生區域之第1位置。於該情形時,可伴隨旋轉台之旋轉相位之變化而使可動銷對基板之接觸支撐位置變化。因此,可對基板之周緣部之整個區域供給處理液,藉此,可不產生處理殘留物地良好地對基板之周緣部進行處理。 Further, in parallel with the rotation of the turntable and the supply of the processing liquid, the relative position of the open magnet and the turntable is placed at the first position where the magnetic field generating region is formed in the region where the respective driving magnets pass. In this case, the contact support position of the movable pin to the substrate can be changed in accordance with the change in the rotational phase of the rotary table. Therefore, the processing liquid can be supplied to the entire region of the peripheral portion of the substrate, whereby the peripheral portion of the substrate can be satisfactorily processed without causing the processing residue.

又,本發明提供一種基板處理方法,其係於包含基板保持旋轉裝置及第1相對移動單元之基板處理裝置中執行之基板處理方法,上述基板保持旋轉裝置包含:旋轉台;旋轉驅動單元,其使上述旋轉台繞沿著鉛垂方向之旋轉軸線旋轉;可動銷,其係用以將基板水平地支撐之複數根可動銷,具有可移動地設置於遠離上述旋轉軸線之較遠之開放位置與靠近上述旋轉軸線之保持位置之間的支撐部,且以與上述旋轉台一同繞上述旋轉軸線旋轉之方式設置;施壓單元,其將各可動銷之上述支撐部施壓至上述保持位置;驅動用磁鐵,其對應於各可動銷而安裝;及開放磁鐵,其係以非旋轉狀態設置之開放磁鐵,形成伴隨上述旋轉台之旋轉而旋轉之各可動銷能夠通過之既定之磁場產生區域且為集中於上述旋轉台之旋轉方向且以僅供與複數根可動銷中之一部分可動銷對應之驅動用磁鐵能夠通過之方式設置的磁場產生區域,對通過該磁場產生區域之上述可動銷之驅動用磁鐵賦予斥力或吸引力,於由上述施壓單元施壓至上述保持位置之該可動銷之上述支撐部產生抵抗該施壓力而朝向上述開放位置之力;上述第1相對移動單元係使上述開放磁 鐵與上述旋轉台於在各驅動用磁鐵通過之區域形成上述磁場產生區域之第1位置、與在各驅動用磁鐵通過之區域不形成上述磁場產生區域之第2位置之間相對移動;該基板處理方法包含:旋轉台旋轉步驟,其使上述旋轉台繞上述旋轉軸線旋轉;處理液供給步驟,其對伴隨上述旋轉台之旋轉而旋轉之基板供給處理液;及開放磁鐵配置步驟,其與上述旋轉台旋轉步驟及上述處理液供給步驟並行地,將上述開放磁鐵與上述旋轉台之相對位置配置於上述第1位置。 Moreover, the present invention provides a substrate processing method which is implemented in a substrate processing apparatus including a substrate holding and rotating device and a first relative moving unit, wherein the substrate holding rotating device includes a rotary table and a rotary drive unit. Rotating the rotating table about a rotation axis along a vertical direction; a movable pin, wherein the plurality of movable pins for horizontally supporting the substrate have a movably disposed open position far from the rotation axis and a support portion between the holding positions of the rotation axis, and is disposed to rotate around the rotation axis together with the rotating table; a pressing unit that presses the support portion of each movable pin to the holding position; a magnet is attached to each movable pin; and an open magnet is an open magnet that is provided in a non-rotating state, and forms a predetermined magnetic field generating region through which each of the movable pins that rotates with the rotation of the rotating table can pass. Concentrating on the rotation direction of the above-mentioned rotary table and corresponding to only one of the plurality of movable pins a magnetic field generating region that can be provided by the driving magnet, and a repulsive force or an attractive force is applied to the driving magnet of the movable pin passing through the magnetic field generating region, and the movable pin is pressed by the pressing unit to the holding position. The support portion generates a force toward the open position against the pressing force; the first relative moving unit causes the open magnetic The iron and the rotating table relatively move between a first position where the magnetic field generating region is formed in a region where each driving magnet passes, and a second position where the magnetic field generating region is not formed in a region where each driving magnet passes; the substrate The processing method includes a rotating table rotating step of rotating the rotating table about the rotation axis, a processing liquid supply step of supplying a processing liquid to a substrate that rotates in accordance with rotation of the rotating table, and an open magnet disposing step, which is the same as The rotating table rotating step and the processing liquid supplying step are performed in parallel with the relative position of the open magnet and the rotating table at the first position.

根據該方法,對處於旋轉狀態之基板之主面供給處理液。供給至基板之主面之處理液受到基板之旋轉所產生之離心力之影響而朝向基板之周緣部流動。藉此,利用處理液對基板之周緣部進行液體處理。 According to this method, the processing liquid is supplied to the main surface of the substrate in a rotating state. The processing liquid supplied to the main surface of the substrate flows toward the peripheral portion of the substrate by the centrifugal force generated by the rotation of the substrate. Thereby, the peripheral portion of the substrate is subjected to liquid treatment using the treatment liquid.

又,與旋轉台之旋轉及處理液之供給並行地,將開放磁鐵與旋轉台之相對位置配置於在各驅動用磁鐵通過之區域形成磁場產生區域之第1位置。於該情形時,可伴隨旋轉台之旋轉相位之變化而使可動銷對基板之接觸支撐位置變化。因此,可對基板之周緣部之整個區域供給處理液,藉此,可不產生處理殘留物地良好地對基板之周緣部進行處理。 Further, in parallel with the rotation of the turntable and the supply of the processing liquid, the relative position of the open magnet and the turntable is placed at the first position where the magnetic field generating region is formed in the region where the respective driving magnets pass. In this case, the contact support position of the movable pin to the substrate can be changed in accordance with the change in the rotational phase of the rotary table. Therefore, the processing liquid can be supplied to the entire region of the peripheral portion of the substrate, whereby the peripheral portion of the substrate can be satisfactorily processed without causing the processing residue.

本發明中之上述之或進而其他之目的、特徵及效果可根據以下參照隨附圖式所敍述之實施形態之說明而明確。 The above and other objects, features and advantages of the invention will be apparent from

1‧‧‧基板處理裝置 1‧‧‧Substrate processing unit

2‧‧‧處理單元 2‧‧‧Processing unit

3‧‧‧控制裝置 3‧‧‧Control device

4‧‧‧處理腔室 4‧‧‧Processing chamber

5‧‧‧旋轉夾頭 5‧‧‧Rotary chuck

6‧‧‧藥液噴嘴 6‧‧‧Drug nozzle

7‧‧‧藥液供給單元 7‧‧‧Drug supply unit

8‧‧‧水供給單元 8‧‧‧Water supply unit

10‧‧‧清洗刷 10‧‧‧ cleaning brush

10a‧‧‧清洗面 10a‧‧‧cleaning surface

11‧‧‧清洗刷驅動單元 11‧‧‧ cleaning brush drive unit

12‧‧‧保護氣體供給單元 12‧‧‧Protective gas supply unit

14‧‧‧藥液配管 14‧‧‧Pharmaceutical piping

15‧‧‧藥液閥 15‧‧‧Drug valve

17‧‧‧旋轉驅動單元 17‧‧‧Rotary drive unit

21‧‧‧噴嘴臂 21‧‧‧Nozzle arm

22‧‧‧噴嘴移動單元 22‧‧‧Nozzle mobile unit

41‧‧‧水噴嘴 41‧‧‧ water nozzle

42‧‧‧水配管 42‧‧‧Water piping

43‧‧‧水閥 43‧‧‧Water valve

45‧‧‧保護液閥 45‧‧‧Protection valve

47‧‧‧擺動臂 47‧‧‧Swing arm

48‧‧‧臂驅動單元 48‧‧‧arm drive unit

103‧‧‧旋轉驅動單元 103‧‧‧Rotary drive unit

107‧‧‧旋轉台 107‧‧‧Rotary table

108‧‧‧旋轉軸 108‧‧‧Rotary axis

109‧‧‧凸座 109‧‧‧Seat

110‧‧‧可動銷 110‧‧‧Distributable

110a‧‧‧可動銷 110a‧‧‧able sales

110b‧‧‧可動銷 110b‧‧‧able sales

110c‧‧‧可動銷 110c‧‧‧able sales

110d‧‧‧可動銷 110d‧‧‧Distributable

110e‧‧‧可動銷 110e‧‧‧able sales

110f‧‧‧可動銷 110f‧‧‧able sales

111‧‧‧第1可動銷群 111‧‧‧1st movable group

112‧‧‧第2可動銷群 112‧‧‧2nd movable group

115‧‧‧保護盤 115‧‧‧protection disk

115a‧‧‧階差部 115a‧‧

116‧‧‧切口 116‧‧‧Incision

117‧‧‧導軸 117‧‧‧Guide axis

118‧‧‧線性軸承 118‧‧‧Linear bearings

119‧‧‧導引單元 119‧‧‧Guide unit

120‧‧‧凸緣 120‧‧‧Flange

125‧‧‧封閉永久磁鐵 125‧‧‧Closed permanent magnet

126‧‧‧內側升降單元 126‧‧‧Inside lifting unit

127‧‧‧開放永久磁鐵 127‧‧‧Open permanent magnet

128‧‧‧外側升降單元 128‧‧‧Outer lifting unit

129‧‧‧磁場產生區域 129‧‧‧Magnetic field generating area

130‧‧‧屏蔽構件 130‧‧‧Shielding members

131‧‧‧屏蔽板 131‧‧‧Shield

141‧‧‧磁性上浮單元 141‧‧‧Magnetic floating unit

142‧‧‧磁性驅動單元 142‧‧‧Magnetic drive unit

151‧‧‧下軸部 151‧‧‧lower shaft

152‧‧‧上軸部 152‧‧‧Upper shaft

153‧‧‧錐面 153‧‧‧ Cone

154‧‧‧軸承 154‧‧‧ bearing

155‧‧‧支撐軸 155‧‧‧Support shaft

156‧‧‧驅動用永久磁鐵 156‧‧‧Drive permanent magnets

157‧‧‧磁鐵保持構件 157‧‧‧ Magnet holding member

160‧‧‧保護盤側永久磁鐵 160‧‧‧Protection disk side permanent magnet

161‧‧‧磁鐵保持構件 161‧‧‧ Magnet holding member

162‧‧‧貫通孔 162‧‧‧through holes

170‧‧‧惰性氣體供給管 170‧‧‧Inert gas supply pipe

172‧‧‧惰性氣體供給路 172‧‧‧Inert gas supply road

173‧‧‧惰性氣體閥 173‧‧‧Inert gas valve

174‧‧‧惰性氣體流量調整閥 174‧‧‧Inert gas flow adjustment valve

175‧‧‧軸承單元 175‧‧‧ bearing unit

176‧‧‧凹處 176‧‧‧ recess

177‧‧‧間隔件 177‧‧‧ spacers

178‧‧‧軸承 178‧‧‧ bearing

179‧‧‧磁性流體軸承 179‧‧‧Magnetic fluid bearings

181‧‧‧凸緣 181‧‧‧Flange

182‧‧‧流路 182‧‧‧flow path

183‧‧‧傾斜面 183‧‧‧Sloping surface

184‧‧‧罩部 184‧‧‧ Cover

184a‧‧‧凸緣 184a‧‧‧Flange

185‧‧‧凹處 185‧‧‧ recess

186‧‧‧整流構件 186‧‧‧Rectifying components

187‧‧‧腳部 187‧‧‧ feet

188‧‧‧底面 188‧‧‧ bottom

189‧‧‧傾斜面 189‧‧‧ sloped surface

190‧‧‧節流部 190‧‧‧ Throttling Department

191‧‧‧罩部 191‧‧‧ Cover

192‧‧‧圓環板部 192‧‧‧ring plate

193‧‧‧圓筒部 193‧‧‧Cylinder

194‧‧‧切口 194‧‧‧ incision

A1‧‧‧旋轉軸線 A1‧‧‧Rotation axis

A2‧‧‧擺動軸線 A2‧‧‧ Swing axis

A3‧‧‧旋轉軸線 A3‧‧‧Rotation axis

B‧‧‧中心軸線 B‧‧‧Center axis

C‧‧‧載體 C‧‧‧ Carrier

CR‧‧‧中心機械手 CR‧‧‧Center Robot

Dr‧‧‧旋轉方向 Dr‧‧‧Rotation direction

H1‧‧‧手部 H1‧‧‧Hands

H2‧‧‧手部 H2‧‧‧Hands

IR‧‧‧分度機械手 IR‧‧ ‧ indexing robot

LP‧‧‧裝載埠 LP‧‧‧Loader

S1~S14‧‧‧步驟 S1~S14‧‧‧Steps

TU‧‧‧翻轉單元 TU‧‧‧Flip unit

W‧‧‧基板 W‧‧‧Substrate

Wa‧‧‧表面 Wa‧‧‧ surface

Wb‧‧‧背面 Wb‧‧‧ back

圖1係用於說明本發明之一實施形態之基板處理裝置之內部之佈局的圖解俯視圖。 Fig. 1 is a schematic plan view for explaining the layout of the inside of a substrate processing apparatus according to an embodiment of the present invention.

圖2係用於說明設於上述基板處理裝置之處理單元之構成例的圖解剖面圖。 Fig. 2 is a schematic cross-sectional view for explaining a configuration example of a processing unit provided in the substrate processing apparatus.

圖3係用於說明設於上述基板處理裝置之旋轉夾頭之更具體之構成的俯視圖。 Fig. 3 is a plan view for explaining a more specific configuration of a rotary chuck provided in the substrate processing apparatus.

圖4係圖3之構成之仰視圖。 Figure 4 is a bottom plan view showing the configuration of Figure 3.

圖5係自圖3之切斷面線V-V觀察所得之剖面圖。 Fig. 5 is a cross-sectional view taken from the cut surface line V-V of Fig. 3.

圖6係放大表示圖5之構成之一部分之放大剖面圖。 Fig. 6 is an enlarged cross-sectional view showing a part of the configuration of Fig. 5 in an enlarged manner.

圖7係放大表示設於旋轉夾頭之可動銷之附近之構成的剖面圖。 Fig. 7 is an enlarged cross-sectional view showing the configuration of the vicinity of the movable pin of the rotary chuck.

圖8A係表示內側升降永久磁鐵及外側升降磁鐵均位於下位置之狀態下之各可動銷之狀態的示意圖。 Fig. 8A is a schematic view showing a state of each movable pin in a state where both the inner lifting permanent magnet and the outer lifting magnet are in the lower position.

圖8B係表示內側升降永久磁鐵位於上位置且外側升降磁鐵位於下位置之狀態下之各可動銷之狀態的示意圖。 Fig. 8B is a schematic view showing a state of each of the movable pins in a state where the inner lifting permanent magnet is in the upper position and the outer lifting magnet is in the lower position.

圖8C係表示內側升降永久磁鐵及外側升降磁鐵均位於上位置之狀態下之各可動銷之狀態的示意圖。 Fig. 8C is a schematic view showing the state of each of the movable pins in a state where the inner lifting permanent magnet and the outer lifting magnet are both in the upper position.

圖9A至9F係表示旋轉台旋轉一次之期間內之各可動銷之狀態轉變的圖。 9A to 9F are views showing a state transition of each of the movable pins during a period in which the rotary table rotates once.

圖10係用於說明上述基板處理裝置之主要部分之電氣構成的方塊圖。 Fig. 10 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus.

圖11係用於說明藉由上述基板處理裝置執行之處理液處理之一例的流程圖。 Fig. 11 is a flowchart for explaining an example of processing liquid processing performed by the above substrate processing apparatus.

圖12A至12G係用於說明上述處理液處理之處理例之圖解圖。 12A to 12G are diagrams for explaining a processing example of the above-described treatment liquid treatment.

圖13A及13B係表示可動銷位於保持位置時及可動銷位於中間位置時之各個時間之處理液之流回狀態的圖。 13A and 13B are views showing a state in which the treatment liquid flows back at each time when the movable pin is at the holding position and when the movable pin is at the intermediate position.

圖13C係表示基板之周緣部之處理液及惰性氣體之流動的剖面圖。 Fig. 13C is a cross-sectional view showing the flow of the treatment liquid and the inert gas in the peripheral portion of the substrate.

圖1係用於說明本發明之一實施形態之基板處理裝置1之內部之佈局的圖解俯視圖。 Fig. 1 is a schematic plan view for explaining the layout of the inside of the substrate processing apparatus 1 according to an embodiment of the present invention.

基板處理裝置1係利用處理液或處理氣體對包含半導體晶圓(半導體基板)之圓板狀之基板W逐片進行處理的單片式裝置。基板處理裝置1包含:裝載埠LP,其保持複數個載體C;翻轉單元TU,其使基板W之姿勢上下翻轉;及複數個處理單元2,其等對基板W進行處理。裝載埠LP及處理單元2係於水平方向隔以間隔而配置。翻轉單元TU係配置於在裝載埠LP與處理單元2之間搬送之基板W之搬送路徑上。 The substrate processing apparatus 1 is a one-chip apparatus in which a disk-shaped substrate W including a semiconductor wafer (semiconductor substrate) is processed one by one by a processing liquid or a processing gas. The substrate processing apparatus 1 includes a loading cassette LP that holds a plurality of carriers C, an inverting unit TU that inverts the posture of the substrate W, and a plurality of processing units 2 that process the substrate W. The loading cassette LP and the processing unit 2 are arranged at intervals in the horizontal direction. The inverting unit TU is disposed on a transport path of the substrate W that is transported between the loading cassette LP and the processing unit 2.

如圖1所示,基板處理裝置1進而包含:分度機械手IR,其配置於裝載埠LP與翻轉單元TU之間;中心機械手CR,其配置於翻轉單元TU與處理單元2之間;及控制裝置3,其對設於基板處理裝置1之裝置之動作或閥之開關進行控制。分度機械手IR係自保持於裝載埠LP之載體C將數片基板W逐片搬送至翻轉單元TU,並自翻轉單元TU將數片基板W逐片搬送至保持於裝載埠LP之載體C。同樣地,中心機械手CR係自翻轉單元TU將數片基板W逐片搬送至處理單元2,並自處理單元2將數片基板W逐片搬送至翻轉單元TU。中心機械手CR進而於複數個處理單元2之間搬送基板W。 As shown in FIG. 1 , the substrate processing apparatus 1 further includes: an indexing robot IR disposed between the loading cassette LP and the reversing unit TU; and a central robot CR disposed between the reversing unit TU and the processing unit 2; And a control device 3 that controls the operation of the device provided in the substrate processing device 1 or the switching of the valve. The indexing robot IR transports the plurality of substrates W one by one to the reversing unit TU from the carrier C held in the loading cassette LP, and transports the plurality of substrates W one by one from the reversing unit TU to the carrier C held on the loading cassette LP. . Similarly, the center robot CR self-reversing unit TU transports the plurality of substrates W to the processing unit 2 one by one, and transports the plurality of substrates W from the processing unit 2 to the reversing unit TU piece by piece. The center robot CR further transports the substrate W between the plurality of processing units 2.

分度機械手IR具備將基板W水平地支撐之手部H1。分度機械手IR使手部H1水平移動。進而,分度機械手IR使手部 H1升降並使該手部H1繞鉛垂軸線旋轉。同樣地,中心機械手CR具備將基板W水平地支撐之手部H2。中心機械手CR使手部H2水平移動。進而,中心機械手CR使手部H2升降並使該手部H2繞鉛垂軸線旋轉。 The indexing robot IR has a hand H1 that supports the substrate W horizontally. The indexing robot IR moves the hand H1 horizontally. Furthermore, the indexing robot IR makes the hand H1 moves up and down and rotates the hand H1 about the vertical axis. Similarly, the center robot CR has a hand H2 that horizontally supports the substrate W. The center robot CR moves the hand H2 horizontally. Further, the center robot CR raises and lowers the hand H2 and rotates the hand H2 about the vertical axis.

於載體C,以作為器件形成面之基板W之表面Wa朝上之狀態(向上姿勢)收容有基板W。控制裝置3係藉由分度機械手IR,將基板W以表面Wa(參照圖2等)朝上之狀態自載體C搬送至翻轉單元TU。然後,控制裝置3係藉由翻轉單元TU使基板W翻轉。藉此,基板W之背面Wb(參照圖2等)朝上。其後,控制裝置3係藉由中心機械手CR,將基板W以背面Wb朝上之狀態自翻轉單元TU搬送至處理單元2。然後,控制裝置3藉由處理單元2對基板W之背面Wb進行處理。 In the carrier C, the substrate W is housed in a state in which the surface Wa of the substrate W as the device formation surface faces upward (upward posture). The control device 3 transports the substrate W from the carrier C to the reversing unit TU with the surface Wa (see FIG. 2 and the like) facing upward by the indexing robot IR. Then, the control device 3 inverts the substrate W by the inverting unit TU. Thereby, the back surface Wb (refer FIG. 2, etc.) of the board|substrate W is upward. Thereafter, the control device 3 transports the substrate W from the reversing unit TU to the processing unit 2 with the back surface Wb facing upward by the center robot CR. Then, the control device 3 processes the back surface Wb of the substrate W by the processing unit 2.

對基板W之背面Wb進行處理後,控制裝置3係藉由中心機械手CR,將基板W以背面Wb朝上之狀態自處理單元2搬送至翻轉單元TU。然後,控制裝置3藉由翻轉單元TU使基板W翻轉。藉此,基板W之表面Wa朝上。其後,控制裝置3係藉由分度機械手IR,將基板W以表面Wa朝上之狀態自翻轉單元TU搬送至載體C。藉此,將處理過之基板W收容至載體C。控制裝置3係藉由使分度機械手IR等反覆執行該一連串動作而對數片基板W逐片進行處理。 After the back surface Wb of the substrate W is processed, the control device 3 transports the substrate W from the processing unit 2 to the reversing unit TU with the back surface Wb facing upward by the center robot CR. Then, the control device 3 inverts the substrate W by the inverting unit TU. Thereby, the surface Wa of the substrate W faces upward. Thereafter, the control device 3 transports the substrate W from the reversing unit TU to the carrier C with the surface Wa facing upward by the indexing robot IR. Thereby, the processed substrate W is accommodated in the carrier C. The control device 3 processes the plurality of substrates W piece by piece by repeatedly performing the series of operations by the indexing robot IR or the like.

圖2係用於說明設於基板處理裝置1之處理單元2之構成例的圖解剖面圖。圖3係用於說明設於基板處理裝置1之旋轉夾頭5之更具體之構成的俯視圖。圖4係圖3之構成之仰視圖。圖5係自圖3之切斷面線V-V觀察所得之剖面圖。圖6係放大表示圖 5之構成之一部分之放大剖面圖。圖7係放大表示設於旋轉夾頭5之可動銷110之附近之構成的剖面圖。 FIG. 2 is a schematic cross-sectional view for explaining a configuration example of the processing unit 2 provided in the substrate processing apparatus 1. FIG. 3 is a plan view for explaining a more specific configuration of the rotary chuck 5 provided in the substrate processing apparatus 1. Figure 4 is a bottom plan view showing the configuration of Figure 3. Fig. 5 is a cross-sectional view taken from the cut surface line V-V of Fig. 3. Figure 6 is an enlarged view An enlarged cross-sectional view of one of the components of 5. Fig. 7 is a cross-sectional view showing an enlarged configuration of the vicinity of the movable pin 110 of the rotary chuck 5.

如圖2所示,處理單元2包含:箱形之處理腔室4,其具有內部空間;旋轉夾頭(基板保持旋轉裝置)5,其於處理腔室4內將一片基板W以水平姿勢保持,並使基板W繞經過基板W之中心之鉛垂之旋轉軸線A1旋轉;藥液供給單元(處理液供給單元)7,其用以向由旋轉夾頭5保持之基板W之上表面(背面(一主面)Wb)供給作為藥液(處理液)之一例之含有臭氧之氫氟酸溶液(以下,稱為FOM);水供給單元(處理液供給單元)8,其用以向由旋轉夾頭5保持之基板W之上表面供給作為淋洗液(處理液)之水;清洗刷10,其用以與基板W之上表面接觸而對該上表面進行擦洗清洗;清洗刷驅動單元11,其用以驅動清洗刷10;保護氣體供給單元12,其用以向由旋轉夾頭5保持之基板W之下表面(表面(另一主面)Wa)供給作為保護氣體之惰性氣體;及筒狀之處理杯部(未圖示),其包圍旋轉夾頭5。 As shown in FIG. 2, the processing unit 2 comprises a box-shaped processing chamber 4 having an internal space, and a rotary chuck (substrate holding rotating device) 5 for holding a substrate W in a horizontal posture in the processing chamber 4. And rotating the substrate W around the vertical axis of rotation A1 passing through the center of the substrate W; a chemical supply unit (processing liquid supply unit) 7 for feeding the upper surface of the substrate W held by the rotary chuck 5 (one main surface) Wb) An ozone-containing hydrofluoric acid solution (hereinafter referred to as FOM) as an example of a chemical solution (treatment liquid); and a water supply unit (treatment liquid supply unit) 8 for rotating The upper surface of the substrate W held by the chuck 5 is supplied with water as a eluent (treatment liquid); the cleaning brush 10 is for scrubbing cleaning of the upper surface in contact with the upper surface of the substrate W; the cleaning brush driving unit 11 a cleaning gas supply unit 12 for supplying an inert gas as a shielding gas to a lower surface (surface (the other main surface) Wa) of the substrate W held by the rotary chuck 5; A cylindrical processing cup (not shown) surrounds the rotating chuck 5.

如圖2所示,處理腔室4包含:箱狀之間隔壁(未圖示);作為送風單元之FFU(風扇‧過濾器‧單元,未圖示),其自間隔壁之上部向間隔壁內(相當於處理腔室4內)輸送潔淨空氣;及排氣裝置(未圖示),其自間隔壁之下部將處理腔室4內之氣體排出。藉由FFU及排氣裝置而於處理腔室4內形成降流(下降流)。 As shown in Fig. 2, the processing chamber 4 includes a box-shaped partition wall (not shown), and an FFU (fan ‧ filter ‧ unit, not shown) as a blowing unit, which faces the partition wall from the upper portion of the partition wall The inside (corresponding to the inside of the processing chamber 4) delivers clean air; and an exhaust device (not shown) that discharges the gas in the processing chamber 4 from below the partition wall. A downflow (downflow) is formed in the processing chamber 4 by the FFU and the exhaust device.

如圖2所示,旋轉夾頭5具備可繞沿著鉛垂方向之旋轉軸線A1旋轉之旋轉台107。於旋轉台107之旋轉中心之下表面經由凸座109結合有旋轉軸108。旋轉軸108為中空軸,沿著鉛垂方向延伸,且構成為受到來自旋轉驅動單元103之驅動力而繞旋轉 軸線A1旋轉。旋轉驅動單元103例如亦可為將旋轉軸108設為驅動軸之電動馬達。 As shown in FIG. 2, the rotary chuck 5 is provided with a rotary table 107 rotatable about a rotation axis A1 along the vertical direction. A rotating shaft 108 is coupled to the lower surface of the rotation center of the rotary table 107 via a boss 109. The rotating shaft 108 is a hollow shaft extending in the vertical direction and configured to be rotated by the driving force from the rotary driving unit 103. The axis A1 rotates. The rotary drive unit 103 may be, for example, an electric motor in which the rotary shaft 108 is a drive shaft.

如圖2所示,旋轉夾頭5進而具備於旋轉台107之上表面之周緣部沿著圓周方向隔以大致等間隔而設置的複數根(本實施形態中為6根)可動銷110。各可動銷110以如下方式構成,即,於與具有大致水平之上表面之旋轉台107隔以固定間隔之上方之基板保持高度,將基板W保持為水平。即,設於旋轉夾頭5之保持銷全部為可動銷110。 As shown in FIG. 2, the rotary chuck 5 further includes a plurality of (six in the present embodiment) movable pins 110 which are provided at substantially equal intervals in the circumferential direction around the peripheral portion of the upper surface of the rotary table 107. Each of the movable pins 110 is configured to maintain the height of the substrate above the rotating table 107 having a substantially horizontal upper surface at a fixed interval, and to keep the substrate W horizontal. That is, all of the holding pins provided in the rotary chuck 5 are the movable pins 110.

旋轉台107形成為沿著水平面之圓盤狀,且結合於與旋轉軸108結合之凸座109。 The rotary table 107 is formed in a disk shape along a horizontal plane, and is coupled to a boss 109 coupled to the rotating shaft 108.

如圖3所示,各可動銷110係於旋轉台107之上表面之周緣部沿著圓周方向等間隔地配置。各可動銷110具有彼此共通之規格。6根可動銷110係以彼此不相鄰之3根可動銷110為單位設定為一個群。於圖3中,可動銷110a、可動銷110c及可動銷110e之群與可動銷110b、可動銷110d及可動銷110f之群設定為互不相同之群。 As shown in FIG. 3, each of the movable pins 110 is disposed at equal intervals in the circumferential direction on the peripheral portion of the upper surface of the rotary table 107. Each of the movable pins 110 has a specification common to each other. The six movable pins 110 are set to one group in units of three movable pins 110 that are not adjacent to each other. In FIG. 3, the group of the movable pin 110a, the movable pin 110c, and the movable pin 110e and the movable pin 110b, the movable pin 110d, and the movable pin 110f are set to be different from each other.

換言之,6根可動銷110包含第1可動銷群111(圖9A等)中包含之3根可動銷110a、110c、110e(110)、及第2可動銷群112中包含之3根可動銷110b、110d、110f(110),第1可動銷群111中包含之可動銷110與第2可動銷群112(圖9A等)中包含之可動銷110係於旋轉台107之圓周方向上交替地配置。若著眼於第1可動銷群111,則3根可動銷110等間隔(120°間隔)地配置。又,若著眼於第2可動銷群112,則3根可動銷110等間隔(120°間隔)地配置。 In other words, the six movable pins 110 include three movable pins 110a, 110c, 110e (110) included in the first movable pin group 111 (FIG. 9A, etc.), and three movable pins 110b included in the second movable pin group 112. 110d and 110f (110), the movable pin 110 included in the first movable pin group 111 and the movable pin 110 included in the second movable pin group 112 (FIG. 9A and the like) are alternately arranged in the circumferential direction of the rotary table 107. . When focusing on the first movable pin group 111, the three movable pins 110 are arranged at equal intervals (120° intervals). Further, when attention is paid to the second movable pin group 112, the three movable pins 110 are arranged at equal intervals (120° intervals).

各可動銷110包含:下軸部151,其結合於旋轉台 107;及上軸部(支撐部)152,其一體地形成於下軸部151之上端;下軸部151及上軸部152分別形成為圓柱形狀。上軸部152係自下軸部151之中心軸線偏心地設置。將下軸部151之上端與上軸部152之下端之間連接之表面形成自上軸部152朝向下軸部151之周面下降之錐面153。 Each movable pin 110 includes: a lower shaft portion 151 coupled to the rotary table 107; and an upper shaft portion (support portion) 152 integrally formed at an upper end of the lower shaft portion 151; and the lower shaft portion 151 and the upper shaft portion 152 are each formed in a cylindrical shape. The upper shaft portion 152 is eccentrically disposed from the center axis of the lower shaft portion 151. A surface connecting the upper end of the lower shaft portion 151 and the lower end of the upper shaft portion 152 is formed as a tapered surface 153 which is lowered from the upper shaft portion 152 toward the circumferential surface of the lower shaft portion 151.

如圖7所示,可動銷110係以下軸部151可繞與其中心軸線同軸之旋轉軸線A3旋轉之方式結合於旋轉台107。更詳細而言,於下軸部151之下端部設置有經由軸承154支撐於旋轉台107之支撐軸155。於支撐軸155之下端結合有保持有驅動用永久磁鐵(驅動用磁鐵)156之磁鐵保持構件157。驅動用永久磁鐵156例如使磁極方向朝向相對於可動銷110之旋轉軸線A3正交之方向而配置。各驅動用永久磁鐵156係以如下方式設置,即,於未對與該驅動用永久磁鐵156對應之可動銷110賦予外力之狀態下,具有於與旋轉軸線A3正交之方向(與沿著旋轉軸線之軸線正交之方向)上彼此相同之磁極方向。 As shown in FIG. 7, the movable pin 110 is coupled to the rotary table 107 such that the lower shaft portion 151 is rotatable about a rotation axis A3 coaxial with the central axis thereof. More specifically, a support shaft 155 that is supported by the turntable 107 via a bearing 154 is provided at a lower end portion of the lower shaft portion 151. A magnet holding member 157 holding a driving permanent magnet (driving magnet) 156 is coupled to the lower end of the support shaft 155. The driving permanent magnet 156 is disposed, for example, such that the magnetic pole direction is directed in a direction orthogonal to the rotation axis A3 of the movable pin 110. Each of the driving permanent magnets 156 is provided in a direction orthogonal to the rotation axis A3 (in the state in which the external force is not applied to the movable pin 110 corresponding to the driving permanent magnet 156) The directions in which the axes of the axes are orthogonal to each other are the same in the direction of the magnetic poles.

驅動用永久磁鐵156係以如下方式配置,即,於受到來自封閉永久磁鐵(封閉磁鐵)125之吸引磁力(超過彈性推壓構件之彈性推壓力之磁力)時,上軸部152朝靠近旋轉軸線A1之保持位置移動。 The driving permanent magnet 156 is disposed in such a manner that when the attraction magnetic force from the closed permanent magnet (closed magnet) 125 (the magnetic force exceeding the elastic pressing force of the elastic pressing member) is received, the upper shaft portion 152 faces the rotation axis. The position of A1 is moved.

如圖2所示,於旋轉台107之下方,沿著旋轉台107之圓周方向配置有複數個開放永久磁鐵(開放磁鐵)127。具體而言,形成以旋轉軸線A1為中心之圓弧狀之3個(與各可動銷群111、112中包含之可動銷110之數量為相同數量)開放永久磁鐵127係於彼此共通之高度位置且於旋轉台107之圓周方向隔以間隔而配置。3 個開放永久磁鐵127具有彼此相同之規格,且於與旋轉軸線A1同軸之圓周上於圓周方向隔以等間隔而配置。各開放永久磁鐵127係沿著與旋轉軸線A1正交之平面(水平面)而配置。更具體而言,開放永久磁鐵127係配置於相對於旋轉軸線A1而言與驅動用永久磁鐵156大致相同之位置或者相較驅動用永久磁鐵156略靠徑向之外側(於圖3及圖4中,表示大致相同之位置之情形)。各開放永久磁鐵127之圓周方向長度(角度)為約30°。將各開放永久磁鐵127之圓周方向長度(角度)設為約30°之原因在於以如下方式設定,即,如下述般,於使基板W以液體處理速度(例如約500rpm)旋轉時,形成於伴隨旋轉台107之旋轉而旋轉之驅動用永久磁鐵156通過之環狀區域的磁場產生區域129(參照圖9A等)之圓周方向長度與約60°(可動銷110之圓周方向之配置間隔)大致一致。 As shown in FIG. 2, a plurality of open permanent magnets (open magnets) 127 are disposed below the turntable 107 along the circumferential direction of the turntable 107. Specifically, three arc-shaped shapes centering on the rotation axis A1 (the same number as the number of the movable pins 110 included in each of the movable pin groups 111 and 112) are formed, and the permanent magnets 127 are attached to each other at a height position common to each other. Further, they are arranged at intervals in the circumferential direction of the turntable 107. 3 The open permanent magnets 127 have the same specifications as each other, and are disposed at equal intervals in the circumferential direction on a circumference coaxial with the rotation axis A1. Each of the open permanent magnets 127 is disposed along a plane (horizontal plane) orthogonal to the rotation axis A1. More specifically, the open permanent magnet 127 is disposed at substantially the same position as the driving permanent magnet 156 with respect to the rotation axis A1 or slightly outside the radial direction of the driving permanent magnet 156 (FIG. 3 and FIG. 4). Medium, indicating the situation of roughly the same position). The circumferential length (angle) of each of the open permanent magnets 127 is about 30°. The reason why the circumferential length (angle) of each of the open permanent magnets 127 is about 30° is set in such a manner that when the substrate W is rotated at a liquid processing speed (for example, about 500 rpm), it is formed as follows. The length of the magnetic field generating region 129 (see FIG. 9A and the like) in the annular region that is rotated by the rotation of the rotary table 107 is approximately 60° in the circumferential direction (the arrangement interval of the movable pin 110 in the circumferential direction). Consistent.

於本實施形態中,各開放永久磁鐵127之磁極方向沿著上下方向。各開放永久磁鐵127之上表面呈環狀具有與封閉永久磁鐵125之上表面之磁極相反之磁極。於封閉永久磁鐵125之上表面為例如S極之情形時,各開放永久磁鐵127之上表面亦具有同極性之S極。 In the present embodiment, the magnetic pole directions of the respective open permanent magnets 127 are along the vertical direction. The upper surface of each of the open permanent magnets 127 has a ring-shaped magnetic pole opposite to the magnetic pole of the upper surface of the closed permanent magnet 125. When the upper surface of the closed permanent magnet 125 is, for example, an S pole, the upper surface of each of the open permanent magnets 127 also has S poles of the same polarity.

於開放永久磁鐵127連結有使該複數個開放永久磁鐵127統一升降之外側升降單元(第1相對移動單元)128。外側升降單元128例如為包含可於上下方向伸縮地設置之汽缸之構成,且由該汽缸支撐。又,外側升降單元128亦可使用電動馬達而構成。又,外側升降單元128亦可使開放永久磁鐵127個別地升降。 The open permanent magnet 127 is coupled to an outer lift unit (first relative movement unit) 128 that uniformly raises and lowers the plurality of open permanent magnets 127. The outer lift unit 128 is configured to include, for example, a cylinder that is expandable and contractable in the vertical direction, and is supported by the cylinder. Further, the outer lift unit 128 may be configured using an electric motor. Further, the outer lift unit 128 can also raise and lower the open permanent magnets 127 individually.

於開放永久磁鐵127配置於其磁極於上下方向接近驅動用永久磁鐵156之上位置(第1位置,參照圖12C)且開放永久 磁鐵127與驅動用永久磁鐵156橫向對向的狀態下,於開放永久磁鐵127與驅動用永久磁鐵156之間作用磁力。 The open permanent magnet 127 is disposed at a position where the magnetic pole approaches the driving permanent magnet 156 in the vertical direction (first position, see FIG. 12C) and is permanently opened. In a state where the magnet 127 and the driving permanent magnet 156 face each other, a magnetic force acts between the open permanent magnet 127 and the driving permanent magnet 156.

如圖2所示,於旋轉台107之下方配置有封閉永久磁鐵(封閉磁鐵)125。於封閉永久磁鐵125連結有使該封閉永久磁鐵125升降之內側升降單元(第2相對移動單元)126。內側升降單元126例如為包含可於上下方向伸縮地設置之汽缸之構成,且由該汽缸支撐。又,內側升降單元126亦可使用驅動馬達而構成。 As shown in FIG. 2, a closed permanent magnet (closed magnet) 125 is disposed below the turntable 107. An inner lifting unit (second relative moving unit) 126 that moves the closing permanent magnet 125 up and down is coupled to the closed permanent magnet 125. The inner lift unit 126 is configured to include, for example, a cylinder that is expandable and contractable in the vertical direction, and is supported by the cylinder. Further, the inner lift unit 126 may be configured using a drive motor.

封閉永久磁鐵125係形成為與旋轉軸線A1同軸之圓環狀,且沿著與旋轉軸線A1正交之平面(水平面)而配置。更具體而言,封閉永久磁鐵125係配置於相對於旋轉軸線A1而言較下述之保護盤側永久磁鐵160遠且較驅動用永久磁鐵156近的位置。即,於俯視時,圓環狀之封閉永久磁鐵125位於保護盤側永久磁鐵160與驅動用永久磁鐵156之間。又,封閉永久磁鐵125係配置於較保護盤側永久磁鐵160低之位置。於本實施形態中,封閉永久磁鐵125之磁極方向沿著水平方向、即旋轉台107之旋轉半徑方向。以如下方式構成,即,於保護盤側永久磁鐵160於下表面具有S極之情形時,封閉永久磁鐵125於旋轉半徑方向內側呈環狀具有相同之磁極、即S極。 The closed permanent magnet 125 is formed in an annular shape coaxial with the rotation axis A1, and is disposed along a plane (horizontal plane) orthogonal to the rotation axis A1. More specifically, the closed permanent magnet 125 is disposed closer to the rotation axis A1 than to the protective disk side permanent magnet 160 and closer to the drive permanent magnet 156. That is, the annular closed permanent magnet 125 is located between the protective disk side permanent magnet 160 and the driving permanent magnet 156 in plan view. Further, the closed permanent magnet 125 is disposed at a position lower than the protective disk side permanent magnet 160. In the present embodiment, the direction of the magnetic pole of the closed permanent magnet 125 is along the horizontal direction, that is, the direction of the radius of rotation of the turntable 107. In the case where the protective disk side permanent magnet 160 has the S pole on the lower surface, the closed permanent magnet 125 has the same magnetic pole, that is, the S pole, in a ring shape in the inner side in the radial direction.

於封閉永久磁鐵125配置於使環狀之磁極相對於驅動用永久磁鐵156於水平方向對向之上位置(第3位置,參照圖8B及圖12B)的狀態下,藉由作用於封閉永久磁鐵125與驅動用永久磁鐵156之間之磁力,而使可動銷110朝保持位置被驅動,並保持於其保持位置。 The closed permanent magnet 125 is disposed in a state in which the annular magnetic pole is opposed to the driving permanent magnet 156 in the horizontal direction (the third position, see FIGS. 8B and 12B), and acts on the closed permanent magnet. The magnetic force between the 125 and the driving permanent magnet 156 causes the movable pin 110 to be driven toward the holding position and held in its holding position.

於旋轉台107之下方設置有屏蔽構件130,該屏蔽構 件130將藉由開放永久磁鐵127產生之磁場與藉由封閉永久磁鐵125產生之磁場屏蔽。屏蔽構件130包含在旋轉台107之圓周方向隔以間隔而配置之俯視圓弧狀之3個(與開放永久磁鐵127之個數為相同數量)屏蔽板131。各屏蔽板131形成以旋轉軸線A1為中心之圓弧狀。3個屏蔽板131具有彼此相同之規格,且於與旋轉軸線A1同軸之圓周上於圓周方向隔以等間隔而配置。各屏蔽板131配置於封閉永久磁鐵125之內側。3個屏蔽板131係與3個開放永久磁鐵127一對一對應地設置。相互對應之一組屏蔽板131及開放永久磁鐵127係自旋轉軸線A1觀察時配置於彼此相同之角度方向。又,相互對應之一組屏蔽板131及開放永久磁鐵127彼此相同。各屏蔽板131可以能夠與封閉永久磁鐵125一體升降之方式安裝於封閉永久磁鐵125,亦可安裝於相對於旋轉台107無法相對旋轉且無法相對升降地設置之其他支撐構件。各屏蔽板131之上下寬度係設定為可將藉由開放永久磁鐵127產生之磁場與藉由封閉永久磁鐵125產生之磁場完全屏蔽的尺寸。 A shielding member 130 is disposed below the rotating table 107, and the shielding structure is The member 130 shields the magnetic field generated by the open permanent magnet 127 from the magnetic field generated by the enclosed permanent magnet 125. The shield member 130 includes three shield plates 131 (the same number as the number of open permanent magnets 127) arranged in a circular arc shape arranged at intervals in the circumferential direction of the turntable 107. Each of the shield plates 131 is formed in an arc shape centering on the rotation axis A1. The three shielding plates 131 have the same specifications as each other, and are disposed at equal intervals in the circumferential direction on a circumference coaxial with the rotation axis A1. Each of the shield plates 131 is disposed inside the closed permanent magnet 125. The three shield plates 131 are provided in one-to-one correspondence with the three open permanent magnets 127. One of the group shield plates 131 and the open permanent magnets 127 are disposed in the same angular direction as viewed from the rotation axis A1. Further, one of the group shield plates 131 and the open permanent magnets 127 corresponding to each other are identical to each other. Each of the shield plates 131 may be attached to the closed permanent magnet 125 so as to be integrally lifted and lowered with the closed permanent magnet 125, or may be attached to another support member that cannot be relatively rotated with respect to the rotary table 107 and that cannot be lifted and lowered. The upper and lower widths of the shield plates 131 are set to a size that completely shields the magnetic field generated by the open permanent magnet 127 from the magnetic field generated by the closed permanent magnet 125.

如上文參照圖7所敍述般,可動銷110係於自旋轉軸線A3偏心之位置具有上軸部152。即,上軸部152之中心軸線B與旋轉軸線A3錯開。因此,藉由下軸部151之旋轉,而使上軸部152在(中心軸線B)遠離旋轉軸線A1之較遠之開放位置(參照下述之圖8A)與(中心軸線B)靠近旋轉軸線A1之保持位置(參照下述之圖8B)之間移位。可動銷110之上軸部152係藉由彈簧等彈性推壓構件(未圖示)之彈性推壓力而朝著開放位置被施壓。因此,於驅動用永久磁鐵156未受到來自封閉永久磁鐵125之吸引磁力時,可動銷110位於遠離旋轉軸線A1之開放位置。 As described above with reference to Fig. 7, the movable pin 110 has the upper shaft portion 152 at a position eccentric from the rotation axis A3. That is, the central axis B of the upper shaft portion 152 is shifted from the rotation axis A3. Therefore, by the rotation of the lower shaft portion 151, the upper shaft portion 152 is closer to the rotation axis at a position farther away from the rotation axis A1 (the center axis B) (refer to FIG. 8A below) and (the center axis B). The position of A1 is shifted (see Fig. 8B below). The upper shaft portion 152 of the movable pin 110 is pressed toward the open position by the elastic pressing force of an elastic pressing member (not shown) such as a spring. Therefore, when the driving permanent magnet 156 is not subjected to the attraction magnetic force from the closed permanent magnet 125, the movable pin 110 is located at an open position away from the rotation axis A1.

如圖2所示,旋轉夾頭5進而具備配置於旋轉台107之上表面與基於可動銷110之基板保持高度之間的保護盤115。保護盤115係可相對於旋轉台107上下移動地被結合,可在靠近旋轉台107之上表面之下位置和於相較該下位置更靠上方與保持於可動銷110之基板W之下表面隔以微小間隔而接近之接近位置之間移動。保護盤115係具有直徑略大於基板W之大小之圓盤狀之構件,於與可動銷110對應之位置形成有用於回避該可動銷110之切口116。 As shown in FIG. 2, the rotary chuck 5 further includes a protective disk 115 disposed between the upper surface of the rotary table 107 and the substrate holding height based on the movable pin 110. The protection disk 115 is coupled to be movable up and down with respect to the rotary table 107, and is positionable below the upper surface of the rotary table 107 and above the lower position and on the lower surface of the substrate W held by the movable pin 110. Moves close to the close position by a small interval. The protective disk 115 has a disk-shaped member having a diameter slightly larger than the size of the substrate W, and a slit 116 for avoiding the movable pin 110 is formed at a position corresponding to the movable pin 110.

旋轉軸108為中空軸,且於其內部插通有惰性氣體供給管170。於惰性氣體供給管170之下端結合有將來自惰性氣體供給源之作為保護氣體之一例之惰性氣體導入的惰性氣體供給路172。作為沿惰性氣體供給路172導入之惰性氣體,可例示潔淨乾燥空氣(Clean Dry Air,CDA)(低濕度之潔淨空氣)或氮氣等惰性氣體。於惰性氣體供給路172之中途介裝有惰性氣體閥173及惰性氣體流量調整閥174。惰性氣體閥173開關惰性氣體供給路172。藉由將惰性氣體閥173打開,而向惰性氣體供給管170送入惰性氣體。該惰性氣體係藉由下述之構成而供給至保護盤115與基板W之下表面之間之空間。如此,由惰性氣體供給管170、惰性氣體供給路172及惰性氣體閥173等構成上述保護氣體供給單元12。 The rotating shaft 108 is a hollow shaft, and an inert gas supply pipe 170 is inserted therein. An inert gas supply path 172 for introducing an inert gas as an example of a shielding gas from an inert gas supply source is incorporated at a lower end of the inert gas supply pipe 170. As the inert gas introduced along the inert gas supply path 172, a clean dry air (Clean Dry Air, CDA) (clean air of low humidity) or an inert gas such as nitrogen gas can be exemplified. An inert gas valve 173 and an inert gas flow rate adjustment valve 174 are interposed in the middle of the inert gas supply path 172. The inert gas valve 173 switches the inert gas supply path 172. The inert gas is supplied to the inert gas supply pipe 170 by opening the inert gas valve 173. The inert gas system is supplied to a space between the protective disk 115 and the lower surface of the substrate W by the following constitution. In this manner, the inert gas supply pipe 170, the inert gas supply path 172, the inert gas valve 173, and the like constitute the above-described shielding gas supply unit 12.

保護盤115係具有與基板W相同程度之大小之大致圓盤狀之構件。於保護盤115之周緣部,於與可動銷110對應之位置,以自可動銷110之外周面確保固定之間隔對該可動銷110鑲邊之方式形成有切口116。於保護盤115之中央區域形成有與凸座109對應之圓形之開口。 The protective disk 115 is a substantially disk-shaped member having the same size as the substrate W. A slit 116 is formed in a peripheral portion of the protective disk 115 at a position corresponding to the movable pin 110 so as to rim the movable pin 110 at a fixed interval from the outer peripheral surface of the movable pin 110. A circular opening corresponding to the boss 109 is formed in a central portion of the protective disk 115.

如圖3及圖5所示,於相較凸座109距離旋轉軸線A1更遠之位置,於保護盤115之下表面結合有與旋轉軸線A1平行地沿鉛垂方向延伸之導軸117。於本實施形態中,導軸117係配置於沿保護盤115之圓周方向隔以等間隔之3個部位。更具體而言,自旋轉軸線A1觀察時,於與每隔1根之可動銷110對應之角度位置分別配置有3根導軸117。導軸117係與設置於旋轉台107之對應部位之線性軸承118結合,且可一面由該線性軸承118導引一面於鉛垂方向、即與旋轉軸線A1平行之方向移動。因此,導軸117及線性軸承118構成將保護盤115沿著與旋轉軸線A1平行之上下方向導引之導引單元119。 As shown in FIGS. 3 and 5, a guide shaft 117 extending in the vertical direction parallel to the rotation axis A1 is coupled to the lower surface of the protection disk 115 at a position farther from the rotation axis A1 than the boss 109. In the present embodiment, the guide shafts 117 are disposed at three locations that are equally spaced apart in the circumferential direction of the protection disk 115. More specifically, when viewed from the rotation axis A1, three guide shafts 117 are disposed at angular positions corresponding to every other movable pin 110. The guide shaft 117 is coupled to the linear bearing 118 provided at a corresponding portion of the rotary table 107, and is movable in a direction perpendicular to the rotation axis A1 while being guided by the linear bearing 118. Therefore, the guide shaft 117 and the linear bearing 118 constitute a guide unit 119 that guides the protection disk 115 in the up-and-down direction parallel to the rotation axis A1.

導軸117貫通線性軸承118,且於其下端具備向外突出之凸緣120。藉由凸緣120抵接於線性軸承118之下端,而限制導軸117向上方之移動、即保護盤115向上方之移動。即,凸緣120係限制保護盤115向上方之移動之限制構件。 The guide shaft 117 penetrates the linear bearing 118 and has a flange 120 that protrudes outward at a lower end thereof. By the flange 120 abutting against the lower end of the linear bearing 118, the upward movement of the guide shaft 117, that is, the upward movement of the protection disk 115 is restricted. That is, the flange 120 is a restricting member that restricts the upward movement of the protection disk 115.

於相較導軸117距離旋轉軸線A1更遠之外側且相較可動銷110距離旋轉軸線A1更近之內側之位置,於保護盤115之下表面固定有保持有保護盤側永久磁鐵160之磁鐵保持構件161。於本實施形態中,保護盤側永久磁鐵160係使磁極方向朝向上下方向而保持於磁鐵保持構件161。例如,保護盤側永久磁鐵160亦可以於下側具有S極且於上側具有N極之方式固定於磁鐵保持構件161。於本實施形態中,磁鐵保持構件161係於圓周方向隔以等間隔地設置於6個部位。更具體而言,自旋轉軸線A1觀察時,於與相鄰之可動銷110之間(本實施形態中為中間)對應之角度位置配置有各磁鐵保持構件161。進而,於自旋轉軸線A1觀察時由6個磁 鐵保持構件161分割(本實施形態中為等分)之6個角度區域中每隔一個之角度區域內(本實施形態中為該角度區域之中央位置)分別配置有3根導軸117。 A magnet holding the protective disk side permanent magnet 160 is fixed to the lower surface of the protection disk 115 at a position farther from the rotation axis A1 than the guide shaft 117 and closer to the inner side than the rotation axis A1. The member 161 is held. In the present embodiment, the disk-side permanent magnet 160 is held by the magnet holding member 161 with the magnetic pole direction oriented in the vertical direction. For example, the protective disk side permanent magnet 160 may be fixed to the magnet holding member 161 so as to have an S pole on the lower side and an N pole on the upper side. In the present embodiment, the magnet holding members 161 are provided at six intervals at equal intervals in the circumferential direction. More specifically, each of the magnet holding members 161 is disposed at an angular position corresponding to the intermediate movable pin 110 (the middle in the present embodiment) when viewed from the rotation axis A1. Furthermore, it is composed of 6 magnets when viewed from the rotation axis A1. Three guide shafts 117 are disposed in each of the six angular regions of the iron holding member 161 (in the present embodiment, the angular position is the center position of the angular region).

如圖4所示,於旋轉台107,於與6個磁鐵保持構件161對應之6個部位形成有貫通孔162。各貫通孔162係以能夠使相對應之磁鐵保持構件161分別於與旋轉軸線A1平行之鉛垂方向插通之方式形成。於保護盤115位於下位置時,磁鐵保持構件161插通貫通孔162並突出至相較旋轉台107之下表面更靠下方,保護盤側永久磁鐵160位於相較旋轉台107之下表面更靠下方。 As shown in FIG. 4, a through hole 162 is formed in the rotating table 107 at six locations corresponding to the six magnet holding members 161. Each of the through holes 162 is formed such that the corresponding magnet holding members 161 can be inserted in the vertical direction parallel to the rotation axis A1. When the protection disk 115 is in the lower position, the magnet holding member 161 is inserted through the through hole 162 and protrudes to be lower than the lower surface of the rotary table 107, and the protection disk side permanent magnet 160 is located closer to the lower surface of the rotary table 107. Below.

於封閉永久磁鐵125位於上位置(參照圖12B)時,於封閉永久磁鐵125與保護盤側永久磁鐵160之間作用排斥磁力,保護盤側永久磁鐵160受到向上之外力。藉此,保護盤115自保持有保護盤側永久磁鐵160之磁鐵保持構件161受到向上之力而保持於接近基板W之下表面之處理位置。 When the closed permanent magnet 125 is at the upper position (see FIG. 12B), a repulsive magnetic force acts between the closed permanent magnet 125 and the protective disk side permanent magnet 160, and the disk side permanent magnet 160 is protected from an upward external force. Thereby, the protective disk 115 is held at a processing position close to the lower surface of the substrate W from the magnet holding member 161 holding the protective disk side permanent magnet 160 by the upward force.

於封閉永久磁鐵125配置於自上位置(參照圖12B)朝下方相隔之下位置(第4位置,參照圖12B等)的狀態下,封閉永久磁鐵125與保護盤側永久磁鐵160之間之排斥磁力較小,因此,保護盤115藉由自身重量而保持於靠近旋轉台107之上表面之下位置。又,由於封閉永久磁鐵125與驅動用永久磁鐵156不對向,故而不對可動銷110作用將該可動銷110朝其保持位置施壓之外力。 The closed permanent magnet 125 is disposed at a position downward (downward from the upper position (see FIG. 12B) (the fourth position, see FIG. 12B, etc.), and the repulsion between the closed permanent magnet 125 and the protective disk side permanent magnet 160 is disposed. The magnetic force is small, and therefore, the protective disk 115 is held close to the upper surface of the rotary table 107 by its own weight. Further, since the closed permanent magnet 125 does not oppose the driving permanent magnet 156, the movable pin 110 does not act on the movable pin 110 to apply a force to the holding position.

因此,於封閉永久磁鐵125位於下位置時,保護盤115位於靠近旋轉台107之上表面之下位置,而使可動銷110保持於其開放位置。於該狀態下,相對於旋轉夾頭5將基板W搬入及搬出之中心機械手CR可使其手部H2進入至保護盤115與基板W之下 表面之間之空間。 Therefore, when the closed permanent magnet 125 is in the lower position, the protective disk 115 is located near the upper surface of the rotary table 107, and the movable pin 110 is held in its open position. In this state, the center robot CR that carries and unloads the substrate W with respect to the spin chuck 5 can bring the hand H2 into the protective disk 115 and the substrate W. The space between the surfaces.

保護盤側永久磁鐵160、封閉永久磁鐵125、及內側升降單元126係構成藉由永久磁鐵125、160之間之斥力使保護盤115自旋轉台107之表面朝上方上浮並導至處理位置的磁性上浮單元141。又,驅動用永久磁鐵156、封閉永久磁鐵125、及內側升降單元126係構成藉由永久磁鐵125、156之間之磁力將可動銷110保持於其保持位置之磁性驅動單元142。 The protective disk side permanent magnet 160, the closed permanent magnet 125, and the inner lifting unit 126 constitute a magnetic force that lifts the protective disk 115 upward from the surface of the rotating table 107 by the repulsive force between the permanent magnets 125, 160 and leads to the processing position. The floating unit 141. Further, the driving permanent magnet 156, the closing permanent magnet 125, and the inner lifting unit 126 constitute a magnetic driving unit 142 that holds the movable pin 110 in its holding position by the magnetic force between the permanent magnets 125 and 156.

即,磁性上浮單元141及磁性驅動單元142共有封閉永久磁鐵125與內側升降單元126。而且,於封閉永久磁鐵125位於上位置時,藉由封閉永久磁鐵125與保護盤側永久磁鐵160之間之磁斥力而保護盤115保持於接近位置,且藉由封閉永久磁鐵125與驅動用永久磁鐵156之間之磁吸引力而可動銷110保持於其保持位置。 That is, the magnetic floating unit 141 and the magnetic driving unit 142 share the closed permanent magnet 125 and the inner lifting unit 126. Moreover, when the closed permanent magnet 125 is in the upper position, the disk 115 is held in the close position by the magnetic repulsion between the permanent magnet 125 and the protective disk side permanent magnet 160, and the permanent magnet 125 and the permanent drive are closed. The magnetic attraction between the magnets 156 maintains the movable pin 110 in its holding position.

如圖6中放大表示般,結合於旋轉軸108之上端之凸座109保持有用以支撐惰性氣體供給管170之上端部之軸承單元175。軸承單元175具備:間隔件177,其嵌入並固定於形成於凸座109之凹處176;軸承178,其配置於間隔件177與惰性氣體供給管170之間;及磁性流體軸承179,其同樣地設置於間隔件177與惰性氣體供給管170之間且相較軸承178更靠上方。 As shown enlarged in Fig. 6, the boss 109 coupled to the upper end of the rotating shaft 108 holds a bearing unit 175 for supporting the upper end portion of the inert gas supply pipe 170. The bearing unit 175 includes a spacer 177 that is fitted and fixed to a recess 176 formed in the boss 109, a bearing 178 disposed between the spacer 177 and the inert gas supply tube 170, and a magnetic fluid bearing 179 that is the same It is disposed between the spacer 177 and the inert gas supply pipe 170 and above the bearing 178.

如圖5所示,凸座109係一體地具有沿著水平面朝外側突出之凸緣181,且於該凸緣181結合有旋轉台107。進而,於凸緣181,以將旋轉台107之內周緣部夾入之方式固定有上述間隔件177,於該間隔件177結合有罩部184。罩部184係形成為大致圓盤狀,於中央具有用以使惰性氣體供給管170之上端露出之開 口,且於其上表面形成有以該開口為底面之凹處185。凹處185具有水平之底面、及自其底面之周緣朝向外側朝斜上方立起之倒立圓錐面狀之傾斜面183。於凹處185之底面結合有整流構件186。整流構件186具有繞旋轉軸線A1沿著圓周方向隔以間隔地離散配置之複數個(例如4個)腳部187,且具有藉由該腳部187自凹處185之底面隔以間隔而配置之底面188。形成有包括自底面188之周緣部朝向外側朝斜上方延伸之倒立圓錐面之傾斜面189。 As shown in FIG. 5, the boss 109 integrally has a flange 181 that protrudes outward along the horizontal plane, and a rotary table 107 is coupled to the flange 181. Further, the spacer 177 is fixed to the flange 181 so as to sandwich the inner peripheral edge portion of the turntable 107, and the cover portion 184 is coupled to the spacer 177. The cover portion 184 is formed in a substantially disk shape and has an opening at the center for exposing the upper end of the inert gas supply pipe 170. The mouth is formed with a recess 185 having a bottom surface as the opening. The recess 185 has a horizontal bottom surface and an inverted conical surface inclined surface 183 rising upward from the peripheral edge of the bottom surface toward the outer side. A rectifying member 186 is coupled to the bottom surface of the recess 185. The rectifying member 186 has a plurality of (for example, four) leg portions 187 that are discretely arranged at intervals in the circumferential direction about the rotation axis A1, and are disposed by the foot portions 187 spaced apart from the bottom surface of the recesses 185. Bottom 188. An inclined surface 189 including an inverted conical surface extending obliquely upward from the peripheral portion of the bottom surface 188 toward the outer side is formed.

如圖5及圖6所示,於罩部184之上表面外周緣朝向外側而形成有凸緣184a。該凸緣184a與形成於保護盤115之內周緣之階差部115a對準。即,於保護盤115位於接近基板W之下表面之接近位置時,凸緣184a與階差部115a相合,罩部184之上表面與保護盤115之上表面位於同一平面內而形成平坦之惰性氣體流路。 As shown in FIGS. 5 and 6, a flange 184a is formed on the outer peripheral edge of the upper surface of the cover portion 184 toward the outer side. The flange 184a is aligned with the step portion 115a formed on the inner circumference of the protection disk 115. That is, when the protection disk 115 is located close to the lower surface of the substrate W, the flange 184a is in contact with the step portion 115a, and the upper surface of the cover portion 184 is in the same plane as the upper surface of the protection disk 115 to form a flat inertness. Gas flow path.

藉由此種構成,自惰性氣體供給管170之上端流出之惰性氣體係流至罩部184之凹處185內由整流構件186之底面188區劃出之空間。該惰性氣體進而經由凹處185之傾斜面183及整流構件186之傾斜面189所區劃出之放射狀之流路182朝向自旋轉軸線A1離開之放射方向吹出。該惰性氣體係於保護盤115與由可動銷110保持之基板W之下表面之間之空間形成惰性氣體之氣流,並自該空間朝向基板W之旋轉半徑方向外側吹出。 With this configuration, the inert gas system flowing out from the upper end of the inert gas supply pipe 170 flows into the space in the recess 185 of the cover portion 184 which is defined by the bottom surface 188 of the rectifying member 186. The inert gas is further blown in a radial direction away from the rotation axis A1 via the inclined flow surface 183 of the recess 185 and the radial flow path 182 defined by the inclined surface 189 of the flow regulating member 186. The inert gas system forms a gas stream of an inert gas in a space between the protective disk 115 and a lower surface of the substrate W held by the movable pin 110, and is blown out from the space toward the outer side in the direction of the radius of rotation of the substrate W.

如圖5所示,保護盤115之上表面之周緣部及保護盤115之周端係由圓環狀之罩部191保護。罩部191包含:圓環板部192,其自上表面之周緣部朝向徑向外側沿水平方向伸出;及圓筒部193,其自圓環板部192之周端垂下。圓環板部192之外周位於 相較旋轉台107之周端更靠外側。圓環板部192及圓筒部193例如使用具有抗藥性之樹脂材料一體地形成。於圓環板部192之內周之與可動銷110對應之位置,形成有用以回避該可動銷110之切口194。切口194係以自可動銷110之外周面確保固定之間隔對該可動銷110鑲邊之方式形成。圓環板部192及圓筒部193例如使用具有抗藥性之樹脂材料一體地形成。 As shown in FIG. 5, the peripheral portion of the upper surface of the protective disk 115 and the peripheral end of the protective disk 115 are protected by an annular cover portion 191. The cover portion 191 includes an annular plate portion 192 that protrudes in the horizontal direction from the peripheral edge portion of the upper surface toward the radially outer side, and a cylindrical portion 193 that hangs from the circumferential end of the annular plate portion 192. The outer circumference of the annular plate portion 192 is located It is closer to the outside than the peripheral end of the rotary table 107. The annular plate portion 192 and the cylindrical portion 193 are integrally formed using, for example, a resin material having chemical resistance. A slit 194 for avoiding the movable pin 110 is formed at a position corresponding to the movable pin 110 at the inner circumference of the annular plate portion 192. The slit 194 is formed by edging the movable pin 110 at a fixed interval from the outer peripheral surface of the movable pin 110. The annular plate portion 192 and the cylindrical portion 193 are integrally formed using, for example, a resin material having chemical resistance.

罩部191之圓環板部192係於上表面具有於由可動銷110保持之基板W之周緣部將惰性氣體之流路節流之節流部190(參照圖13C)。藉由該節流部190,自罩部191與基板W之下表面之間之空間朝外側吹出之惰性氣體流之流速成為高速,因此,可確實地避免或抑制基板W之上表面之處理液(藥液或淋洗液)進入至相較基板W之下表面之周緣部更靠內側。 The annular plate portion 192 of the cover portion 191 is provided with a throttle portion 190 that restricts a flow path of the inert gas at a peripheral portion of the substrate W held by the movable pin 110 on the upper surface (see FIG. 13C). By the throttle unit 190, the flow rate of the inert gas flow which is blown outward from the space between the cover portion 191 and the lower surface of the substrate W becomes high, and therefore, the treatment liquid on the upper surface of the substrate W can be surely prevented or suppressed. (The liquid medicine or the eluent) enters to the inner side of the peripheral portion of the lower surface of the substrate W.

如圖2所示,藥液供給單元7包含:藥液噴嘴6,其朝向基板W之上表面吐出FOM(藥液);噴嘴臂21,其於前端部安裝有藥液噴嘴6;及噴嘴移動單元22,其藉由使噴嘴臂21移動而使藥液噴嘴6移動。 As shown in FIG. 2, the chemical solution supply unit 7 includes a chemical liquid nozzle 6 that discharges FOM (medicine solution) toward the upper surface of the substrate W, a nozzle arm 21 to which a chemical liquid nozzle 6 is attached, and a nozzle movement. The unit 22 moves the liquid chemical nozzle 6 by moving the nozzle arm 21.

藥液噴嘴6係例如以連續流之狀態吐出FOM之直流噴嘴,以例如沿與基板W之上表面垂直之方向吐出FOM之垂直姿勢安裝於噴嘴臂21。噴嘴臂21沿水平方向延伸,且以可於旋轉夾頭5之周圍繞沿鉛垂方向延伸之既定之擺動軸線(未圖示)回旋的方式設置。 The chemical liquid nozzle 6 is, for example, a DC nozzle that discharges the FOM in a continuous flow state, and is attached to the nozzle arm 21 in a vertical posture in which the FOM is discharged in a direction perpendicular to the upper surface of the substrate W, for example. The nozzle arm 21 extends in the horizontal direction and is provided to be rotatable around a circumference of the rotary chuck 5 around a predetermined pivot axis (not shown) extending in the vertical direction.

藥液供給單元7包含:藥液配管14,其將FOM導引至藥液噴嘴6;及藥液閥15,其開關藥液配管14。若藥液閥15打開,則來自FOM供給源之FOM自藥液配管14供給至藥液噴嘴6。 藉此,自藥液噴嘴6吐出FOM。 The chemical solution supply unit 7 includes a chemical liquid pipe 14 that guides the FOM to the chemical liquid nozzle 6 and a chemical liquid valve 15 that switches the chemical liquid pipe 14. When the chemical liquid valve 15 is opened, the FOM from the FOM supply source is supplied from the chemical liquid pipe 14 to the chemical liquid nozzle 6. Thereby, the FOM is discharged from the chemical liquid nozzle 6.

噴嘴移動單元22係藉由使噴嘴臂21繞擺動軸線回旋,而使藥液噴嘴6沿著於俯視時經過基板W之上表面中央部之軌跡水平移動。噴嘴移動單元22係使藥液噴嘴6在自藥液噴嘴6吐出之FOM著液於基板W之上表面之處理位置與藥液噴嘴6於俯視時設定於旋轉夾頭5之周圍之起始位置之間水平移動。進而,噴嘴移動單元22係使藥液噴嘴6在自藥液噴嘴6吐出之FOM著液於基板W之上表面中央部之中央位置與自藥液噴嘴6吐出之FOM著液於基板W之上表面周緣部之周緣位置之間水平移動。中央位置及周緣位置均為處理位置。 The nozzle moving unit 22 horizontally moves the chemical liquid nozzle 6 along the locus of the central portion of the upper surface of the substrate W in a plan view by rotating the nozzle arm 21 about the swing axis. The nozzle moving unit 22 sets the processing position of the chemical liquid nozzle 6 on the upper surface of the substrate W by the FOM discharged from the chemical liquid nozzle 6, and the starting position of the chemical liquid nozzle 6 around the rotary chuck 5 in a plan view. Move between horizontally. Further, the nozzle moving unit 22 causes the chemical liquid nozzle 6 to immerse the FOM discharged from the chemical liquid nozzle 6 at the center of the upper surface of the upper surface of the substrate W and the FOM discharged from the chemical liquid nozzle 6 to be liquid on the substrate W. The peripheral position of the peripheral portion of the surface moves horizontally. The central position and the peripheral position are processing positions.

再者,藥液噴嘴6亦可為吐出口朝向基板W之上表面之既定位置(例如中央部)固定地配置之固定噴嘴。 Further, the chemical liquid nozzle 6 may be a fixed nozzle in which the discharge port is fixedly disposed at a predetermined position (for example, a central portion) of the upper surface of the substrate W.

如圖2所示,水供給單元8包含水噴嘴41。水噴嘴41係例如以連續流之狀態吐出液體之直流噴嘴,且於旋轉夾頭5之上方使其吐出口朝向基板W之上表面之中央部固定地配置。於水噴嘴41連接有供給來自水供給源之水之水配管42。於水配管42之中途部介裝有用以對來自水噴嘴41之水之供給/供給停止進行切換之水閥43。若水閥43打開,則自水配管42供給至水噴嘴41之連續流之水自設定於水噴嘴41之下端之吐出口吐出。又,若水閥43關閉,則停止自水配管42向水噴嘴41供給水。水為例如去離子水(DIW)。亦可為碳酸水、電解離子水、氫水、臭氧水及稀釋濃度(例如,10ppm~100ppm左右)之鹽酸水之任一者,並不限定於DIW。 As shown in FIG. 2, the water supply unit 8 includes a water nozzle 41. The water nozzle 41 is, for example, a DC nozzle that discharges liquid in a state of continuous flow, and the discharge port is fixedly disposed above the spin chuck 5 toward the central portion of the upper surface of the substrate W. A water pipe 42 for supplying water from the water supply source is connected to the water nozzle 41. A water valve 43 for switching the supply/supply stop of the water from the water nozzle 41 is interposed in the middle of the water pipe 42. When the water valve 43 is opened, the water supplied from the water pipe 42 to the continuous flow of the water nozzle 41 is discharged from the discharge port set at the lower end of the water nozzle 41. Moreover, when the water valve 43 is closed, the supply of water from the water pipe 42 to the water nozzle 41 is stopped. The water is, for example, deionized water (DIW). It may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm), and is not limited to DIW.

再者,水噴嘴41無須相對於旋轉夾頭5固定地配置,例如,亦可採用所謂掃描噴嘴之形態,該掃描噴嘴安裝於可於旋轉 夾頭5之上方於水平面內擺動之臂,藉由該臂之擺動而掃描基板W之上表面上之水之著液位置。 Further, the water nozzle 41 need not be fixedly disposed with respect to the rotary chuck 5, and for example, a so-called scanning nozzle may be employed, and the scanning nozzle is mounted to be rotatable An arm that swings above the collet 5 in a horizontal plane scans the position of the water on the upper surface of the substrate W by the swing of the arm.

清洗刷10係包含例如聚乙烯醇(polyvinyl alcohol,PVA)之海綿狀之擦洗構件,且形成圓柱狀。清洗刷10係於其下表面具有平坦狀之清洗面10a。清洗面10a作為與基板W之上表面接觸之接觸面發揮功能。 The cleaning brush 10 is a sponge-like scouring member containing, for example, polyvinyl alcohol (PVA), and is formed in a cylindrical shape. The cleaning brush 10 is a cleaning surface 10a having a flat shape on its lower surface. The cleaning surface 10a functions as a contact surface that comes into contact with the upper surface of the substrate W.

清洗刷驅動單元11包含:擺動臂47,其於前端部保持清洗刷10;及臂驅動單元48,其用以驅動擺動臂47。臂驅動單元48係以可使擺動臂47繞沿鉛垂方向延伸之擺動軸線A2擺動或者使擺動臂47上下移動的方式構成。藉由該構成,可於基板W由旋轉夾頭5保持並進行旋轉時使清洗刷10在基板W之上方之位置與設定於旋轉夾頭5之側方之起始位置之間水平移動。 The cleaning brush drive unit 11 includes a swing arm 47 that holds the cleaning brush 10 at the front end portion, and an arm drive unit 48 that drives the swing arm 47. The arm drive unit 48 is configured to swing the swing arm 47 about the swing axis A2 extending in the vertical direction or to move the swing arm 47 up and down. According to this configuration, the cleaning brush 10 can be horizontally moved between the position above the substrate W and the starting position set to the side of the rotary chuck 5 when the substrate W is held by the rotary chuck 5 and rotated.

進而,亦可將清洗刷10之清洗面10a壓抵於基板W之上表面(背面Wb)並使清洗刷10之壓抵位置於基板W之中央部與基板W之周緣部之間沿基板W之半徑方向移動(掃描)。 Further, the cleaning surface 10a of the cleaning brush 10 may be pressed against the upper surface (back surface Wb) of the substrate W, and the pressing position of the cleaning brush 10 may be between the central portion of the substrate W and the peripheral portion of the substrate W along the substrate W. Move in the radial direction (scan).

於該擦洗清洗時,藉由自水噴嘴41供給水(例如純水(deionized water:去離子水)),而容易消除基板W之背面Wb之異物,又,可將由清洗刷10擦掉之異物朝基板W外排出。 At the time of the scrubbing cleaning, water (for example, pure water (deionized water)) is supplied from the water nozzle 41, and foreign matter on the back surface Wb of the substrate W is easily eliminated, and the foreign matter wiped off by the cleaning brush 10 can be removed. Discharged toward the outside of the substrate W.

圖8A~8C係表示各可動銷110之狀態之示意圖。於圖8A中表示封閉永久磁鐵125及開放永久磁鐵127均位於下位置之狀態。於圖8B中表示封閉永久磁鐵125位於上位置且開放永久磁鐵127位於下位置(第2位置)之狀態。於圖8C中表示封閉永久磁鐵125及開放永久磁鐵127均位於上位置之狀態。 8A to 8C are schematic views showing the state of each of the movable pins 110. The state in which the closed permanent magnet 125 and the open permanent magnet 127 are both in the lower position is shown in Fig. 8A. Fig. 8B shows a state in which the closed permanent magnet 125 is in the upper position and the open permanent magnet 127 is in the lower position (second position). In Fig. 8C, the closed permanent magnet 125 and the open permanent magnet 127 are both in the upper position.

如上所述,於各可動銷110,藉由彈性推壓構件(未圖 示)而將可動銷110施壓至保持位置。因此,於未對可動銷110作用外力之狀態下,可動銷110受到來自彈性推壓構件(未圖示)之彈性推壓力而朝開放位置被施壓。於可動銷110位於開放位置之狀態下,驅動用永久磁鐵156係以例如N極朝向旋轉台107之徑向之內側且S極朝向旋轉台107之徑向之外側的方式配置。 As described above, in each of the movable pins 110, the elastic pressing member (not shown) The movable pin 110 is pressed to the holding position. Therefore, in a state where no external force is applied to the movable pin 110, the movable pin 110 is pressed toward the open position by the elastic pressing force from the elastic pressing member (not shown). In the state in which the movable pin 110 is in the open position, the driving permanent magnet 156 is disposed such that the N pole faces the inside of the radial direction of the turntable 107 and the S pole faces the radially outer side of the turntable 107.

於如圖8A所示般封閉永久磁鐵125及開放永久磁鐵127均位於下位置之狀態下,來自封閉永久磁鐵125及開放永久磁鐵127之磁力不作用於驅動用永久磁鐵156。因此,不對可動銷110作用外力而可動銷110位於開放位置。 When the closed permanent magnet 125 and the open permanent magnet 127 are both in the lower position as shown in FIG. 8A, the magnetic force from the closed permanent magnet 125 and the open permanent magnet 127 does not act on the driving permanent magnet 156. Therefore, no external force is applied to the movable pin 110 and the movable pin 110 is in the open position.

自圖8A所示之狀態使封閉永久磁鐵125上升並配置於上位置。藉由封閉永久磁鐵125之上表面接近驅動用永久磁鐵156,而對驅動用永久磁鐵156產生吸引磁力,於驅動用永久磁鐵156與封閉永久磁鐵125之間產生吸引力。於封閉永久磁鐵125配置於上位置之狀態下,作用於驅動用永久磁鐵156之吸引磁力之大小超過彈性推壓構件之彈性推壓力,藉此,上軸部152自遠離旋轉軸線A1(參照圖2)之開放位置朝靠近旋轉軸線A1之保持位置移動。藉此,可動銷110朝著保持位置被施壓。於該狀態下,如圖8B所示,驅動用永久磁鐵156係以例如S極朝向旋轉台107之徑向之內側且N極朝向旋轉台107之徑向之外側的方式配置。 The closed permanent magnet 125 is raised and placed in the upper position from the state shown in Fig. 8A. When the upper surface of the permanent magnet 125 is closed to approach the driving permanent magnet 156, a suction magnetic force is generated to the driving permanent magnet 156, and an attraction force is generated between the driving permanent magnet 156 and the closing permanent magnet 125. When the closed permanent magnet 125 is placed at the upper position, the magnitude of the suction magnetic force acting on the driving permanent magnet 156 exceeds the elastic pressing force of the elastic pressing member, whereby the upper shaft portion 152 is away from the rotation axis A1 (refer to the figure). 2) The open position moves toward the holding position near the rotation axis A1. Thereby, the movable pin 110 is pressed toward the holding position. In this state, as shown in FIG. 8B, the driving permanent magnet 156 is disposed such that the S pole faces the inside of the radial direction of the turntable 107 and the N pole faces the radially outer side of the turntable 107.

自圖8B所示之狀態使開放永久磁鐵127上升並配置於上位置。即,如圖8C所示,將封閉永久磁鐵125及開放永久磁鐵127之各者均配置於上位置。藉由開放永久磁鐵127之上表面接近驅動用永久磁鐵156,而對驅動用永久磁鐵156產生吸引磁力,於驅動用永久磁鐵156與開放永久磁鐵127之間產生吸引力。換言 之,於由封閉永久磁鐵125施壓至保持位置之該可動銷110產生使之對抗此種施壓力而朝向開放位置之力。於本實施形態中,於封閉永久磁鐵125及開放永久磁鐵127之各者均配置於上位置之狀態下,自開放永久磁鐵127作用於驅動用永久磁鐵156之吸引磁力之大小(與彈性推壓構件之彈性推壓力之合力)略超過自封閉永久磁鐵125作用於驅動用永久磁鐵156之吸引磁力之大小。因此,於將開放永久磁鐵127配置於上位置之狀態下,可動銷110朝向開放位置轉動微小量,其結果,如圖8C所示,上軸部152朝設定於開放位置與保持位置之間之中間位置移動。於可動銷110位於中間位置時,與可動銷110位於保持位置時相比,上軸部152之中心軸線B位於例如以零點幾mm之範圍遠離旋轉軸線A1之方向。 The open permanent magnet 127 is raised and placed in the upper position from the state shown in Fig. 8B. That is, as shown in FIG. 8C, each of the closed permanent magnet 125 and the open permanent magnet 127 is disposed at the upper position. When the upper surface of the open permanent magnet 127 approaches the driving permanent magnet 156, a suction magnetic force is generated to the driving permanent magnet 156, and an attraction force is generated between the driving permanent magnet 156 and the open permanent magnet 127. In other words The movable pin 110, which is pressed by the closed permanent magnet 125 to the holding position, generates a force that is directed toward the open position against such a pressing force. In the present embodiment, in the state in which each of the closed permanent magnet 125 and the open permanent magnet 127 is disposed at the upper position, the magnitude of the attractive magnetic force acting on the permanent magnet 156 for driving from the open permanent magnet 127 (with the elastic pressing force) The resultant force of the elastic pressing force of the member slightly exceeds the magnitude of the attractive magnetic force of the self-closing permanent magnet 125 acting on the driving permanent magnet 156. Therefore, in a state where the open permanent magnet 127 is placed at the upper position, the movable pin 110 is rotated a small amount toward the open position, and as a result, as shown in FIG. 8C, the upper shaft portion 152 is set between the open position and the held position. Move in the middle position. When the movable pin 110 is at the intermediate position, the center axis B of the upper shaft portion 152 is located, for example, in a direction away from the rotation axis A1 by a range of a few tenths of a mm, compared to when the movable pin 110 is in the holding position.

圖9A~9F係表示設置於旋轉台107之複數根可動銷110的圖。於開放永久磁鐵127配置於上位置之狀態(圖8C所示之狀態)且旋轉台107之旋轉狀態下,於伴隨旋轉台107之旋轉而旋轉之驅動用永久磁鐵156通過之環狀區域,間斷地設置有(於圓周方向彼此隔以間隔而配置有)沿著旋轉台107之圓周方向延伸之帶狀之3個(與開放永久磁鐵127之個數為相同數量)磁場產生區域129。各磁場產生區域129係藉由接近之開放永久磁鐵127之磁力形成之磁場存在之區域。於旋轉台107之旋轉狀態下,各磁場產生區域129之圓周方向長度(角度)比相對應之開放永久磁鐵127之圓周方向長度(角度)長。各磁場產生區域129(參照圖9A等)之圓周方向長度(角度)設定為約60°。 9A to 9F are views showing a plurality of movable pins 110 provided on the rotary table 107. When the open permanent magnet 127 is placed in the upper position (the state shown in FIG. 8C) and the rotating table 107 is rotated, the driving permanent magnet 156 that rotates with the rotation of the rotating table 107 passes through the annular region, and is interrupted. Three magnetic field generating regions 129 (the same number as the number of open permanent magnets 127) extending in the circumferential direction of the turntable 107 are disposed (in the circumferential direction at intervals). Each of the magnetic field generating regions 129 is a region where a magnetic field formed by the magnetic force of the open permanent magnet 127 is present. In the rotated state of the rotary table 107, the circumferential length (angle) of each of the magnetic field generating regions 129 is longer than the circumferential length (angle) of the corresponding open permanent magnet 127. The circumferential length (angle) of each of the magnetic field generating regions 129 (see FIG. 9A and the like) is set to about 60°.

於伴隨旋轉台107之旋轉而旋轉之驅動用永久磁鐵156通過之上述環狀區域,以等角度間隔配置有具有60°之圓周方 向長度(角度)之3個磁場產生區域129。於該情形時,與第1可動銷群111中包含之3根可動銷110對應之3個驅動用永久磁鐵156同時通過磁場產生區域129或者與第2可動銷群112中包含之3根可動銷110對應之3個驅動用永久磁鐵156同時通過磁場產生區域129。換言之,於與第1可動銷群111中包含之3根可動銷110對應之3個驅動用永久磁鐵156通過磁場產生區域129的狀態下,與第2可動銷群112中包含之3根可動銷110對應之3個驅動用永久磁鐵156不通過磁場產生區域129。又,於與第2可動銷群112中包含之3根可動銷110對應之3個驅動用永久磁鐵156通過磁場產生區域129之狀態下,與第1可動銷群111中包含之3根可動銷110對應之3個驅動用永久磁鐵156不通過磁場產生區域129。 The driving permanent magnet 156 that rotates in accordance with the rotation of the rotary table 107 passes through the annular region, and has a circumferential circumference of 60° at equal angular intervals. A region 129 is generated for three magnetic fields of length (angle). In this case, the three driving permanent magnets 156 corresponding to the three movable pins 110 included in the first movable pin group 111 simultaneously pass through the magnetic field generating region 129 or the three movable pins included in the second movable pin group 112. The three driving permanent magnets 156 corresponding to 110 simultaneously pass through the magnetic field generating region 129. In other words, in the state in which the three driving permanent magnets 156 corresponding to the three movable pins 110 included in the first movable pin group 111 pass through the magnetic field generating region 129, the three movable pins included in the second movable pin group 112 are included. The three driving permanent magnets 156 corresponding to 110 do not pass through the magnetic field generating region 129. In addition, in the state in which the three driving permanent magnets 156 corresponding to the three movable pins 110 included in the second movable pin group 112 pass through the magnetic field generating region 129, the three movable pins included in the first movable pin group 111 are included. The three driving permanent magnets 156 corresponding to 110 do not pass through the magnetic field generating region 129.

於開放永久磁鐵127配置於上位置之狀態下,6根可動銷110中與同時通過磁場產生區域129之3個驅動用永久磁鐵156對應之3個可動銷110自保持位置配置至中間位置。而且,伴隨因旋轉台107之旋轉所致之各可動銷110之相位變化,而同時通過磁場產生區域129之3個驅動用永久磁鐵156於與第1可動銷群111中包含之3根可動銷110對應之驅動用永久磁鐵和與第2可動銷群112中包含之3根可動銷110對應之驅動用永久磁鐵之間切換。即,伴隨因旋轉台107之旋轉所致之各可動銷110之相位變化,而配置於中間位置之3個可動銷110於第1可動銷群111中包含之3根可動銷110與第2可動銷群112中包含之3根可動銷110之間切換。 In the state where the open permanent magnet 127 is placed at the upper position, the three movable pins 110 corresponding to the three driving permanent magnets 156 that simultaneously pass through the magnetic field generating region 129 among the six movable pins 110 are disposed from the holding position to the intermediate position. Further, the three driving permanent magnets 156 passing through the magnetic field generating region 129 and the three movable pins included in the first movable pin group 111 are accompanied by a change in the phase of each of the movable pins 110 due to the rotation of the rotating table 107. The driving permanent magnet corresponding to 110 is switched between the driving permanent magnet corresponding to the three movable pins 110 included in the second movable pin group 112. In other words, the three movable pins 110 disposed at the intermediate position and the three movable pins 110 included in the first movable pin group 111 are movable along with the second movable pin 110 due to the rotation of the rotary table 107. The three movable pins 110 included in the pin group 112 are switched.

於圖9A所示之狀態下,第1可動銷群111中包含之3根可動銷110a、110c、110e與3個開放永久磁鐵127於旋轉台107 之圓周方向上對齊,因此,與第1可動銷群111中包含之3根可動銷110a、110c、110e對應之3個驅動用永久磁鐵156(參照圖8C等)分別存在於磁場產生區域129內。因此,來自開放永久磁鐵127之吸引磁力產生於第1可動銷群111中包含之3根可動銷110a、110c、110e,而第1可動銷群111中包含之3根可動銷110a、110c、110e配置於中間位置(開放)。另一方面,與第2可動銷群112中包含之3根可動銷110b、110d、110f對應之3個驅動用永久磁鐵156(參照圖8C等)不存在於磁場產生區域129內。因此,第2可動銷群112中包含之3根可動銷110b、110d、110f配置於保持位置(封閉)。將旋轉台107之旋轉相位自圖9A所示之狀態沿旋轉方向Dr前進後之狀態示於圖9B。 In the state shown in FIG. 9A, the three movable pins 110a, 110c, 110e and the three open permanent magnets 127 included in the first movable pin group 111 are on the rotary table 107. Since they are aligned in the circumferential direction, the three driving permanent magnets 156 (see FIG. 8C and the like) corresponding to the three movable pins 110a, 110c, and 110e included in the first movable pin group 111 are respectively present in the magnetic field generating region 129. . Therefore, the attraction magnetic force from the open permanent magnet 127 is generated in the three movable pins 110a, 110c, and 110e included in the first movable pin group 111, and the three movable pins 110a, 110c, and 110e included in the first movable pin group 111 are included. Configured in the middle position (open). On the other hand, the three driving permanent magnets 156 (see FIG. 8C and the like) corresponding to the three movable pins 110b, 110d, and 110f included in the second movable pin group 112 are not present in the magnetic field generating region 129. Therefore, the three movable pins 110b, 110d, and 110f included in the second movable pin group 112 are disposed at the holding position (closed). The state in which the rotational phase of the rotary table 107 is advanced from the state shown in Fig. 9A in the rotational direction Dr is shown in Fig. 9B.

於圖9B所示之狀態下,第1可動銷群111中包含之3根可動銷110a、110c、110e與3個開放永久磁鐵127於旋轉台107之圓周方向上錯開,但第1可動銷群111中包含之3根可動銷110a、110c、110e仍存在於磁場產生區域129內。因此,第1可動銷群111中包含之3根可動銷110a、110c、110e仍然配置於中間位置(開放)。另一方面,第2可動銷群112中包含之3根可動銷110b、110d、110f因相對應之3個驅動用永久磁鐵156(參照圖8C等)不存在於磁場產生區域129內而仍然配置於保持位置(封閉)。將旋轉台107之旋轉相位自圖9B所示之狀態沿旋轉方向Dr進一步前進後之狀態示於圖9C。 In the state shown in FIG. 9B, the three movable pins 110a, 110c, and 110e and the three open permanent magnets 127 included in the first movable pin group 111 are shifted in the circumferential direction of the turntable 107, but the first movable pin group The three movable pins 110a, 110c, 110e included in 111 are still present in the magnetic field generating region 129. Therefore, the three movable pins 110a, 110c, and 110e included in the first movable pin group 111 are still disposed at the intermediate position (open). On the other hand, the three movable pins 110b, 110d, and 110f included in the second movable pin group 112 are still disposed in the magnetic field generating region 129 because the corresponding three driving permanent magnets 156 (see FIG. 8C and the like) are not present. Keep the position (closed). The state in which the rotational phase of the rotary table 107 is further advanced from the state shown in Fig. 9B in the rotational direction Dr is shown in Fig. 9C.

於圖9C所示之狀態下,第1可動銷群111中包含之3根可動銷110a、110c、110e分別脫離至磁場產生區域129外。因此,第1可動銷群111中包含之3根可動銷110a、110c、110e配置 於保持位置(封閉)。代替此,而第2可動銷群112中包含之3根可動銷110b、110d、110f進入至磁場產生區域129內,因此,第2可動銷群112中包含之3根可動銷110b、110d、110f配置於中間位置(開放)。將旋轉台107之旋轉相位自圖9C所示之狀態沿旋轉方向Dr進一步前進後之狀態示於圖9D。 In the state shown in FIG. 9C, the three movable pins 110a, 110c, and 110e included in the first movable pin group 111 are separated from the magnetic field generating region 129, respectively. Therefore, the three movable pins 110a, 110c, and 110e included in the first movable pin group 111 are disposed. Keep the position (closed). Instead of this, the three movable pins 110b, 110d, and 110f included in the second movable pin group 112 enter the magnetic field generating region 129. Therefore, the three movable pins 110b, 110d, and 110f included in the second movable pin group 112 are included. Configured in the middle position (open). The state in which the rotational phase of the rotary table 107 is further advanced from the state shown in Fig. 9C in the rotational direction Dr is shown in Fig. 9D.

於圖9D所示之狀態下,第2可動銷群112中包含之3根可動銷110b、110d、110f與3個開放永久磁鐵127於旋轉台107之圓周方向上對齊。因此,第1可動銷群111中包含之3根可動銷110a、110c、110e配置於中間位置(開放)。另一方面,第1可動銷群111中包含之3根可動銷110a、110c、110e因相對應之3個驅動用永久磁鐵156(參照圖8C等)不存在於磁場產生區域129內而仍然配置於保持位置(封閉)。將旋轉台107之旋轉相位自圖9D所示之狀態沿旋轉方向Dr進一步前進後之狀態示於圖9E。 In the state shown in FIG. 9D, the three movable pins 110b, 110d, and 110f included in the second movable pin group 112 and the three open permanent magnets 127 are aligned in the circumferential direction of the turntable 107. Therefore, the three movable pins 110a, 110c, and 110e included in the first movable pin group 111 are disposed at the intermediate position (open). On the other hand, the three movable pins 110a, 110c, and 110e included in the first movable pin group 111 are still disposed in the magnetic field generating region 129 because the corresponding three driving permanent magnets 156 (see FIG. 8C and the like) are not present. Keep the position (closed). The state in which the rotational phase of the rotary table 107 is further advanced from the state shown in Fig. 9D in the rotational direction Dr is shown in Fig. 9E.

於圖9E所示之狀態下,第2可動銷群112中包含之3根可動銷110b、110d、110f分別脫離至磁場產生區域129外。因此,第2可動銷群112中包含之3根可動銷110b、110d、110f配置於保持位置(封閉)。代替此,而第1可動銷群111中包含之3根可動銷110a、110c、110e進入至磁場產生區域129內,因此,第1可動銷群111中包含之3根可動銷110a、110c、110e配置於中間位置(開放)。將旋轉台107之旋轉相位自圖9E所示之狀態沿旋轉方向Dr進一步前進後之狀態示於圖9F。 In the state shown in FIG. 9E, the three movable pins 110b, 110d, and 110f included in the second movable pin group 112 are separated from the magnetic field generating region 129, respectively. Therefore, the three movable pins 110b, 110d, and 110f included in the second movable pin group 112 are disposed at the holding position (closed). Instead of this, the three movable pins 110a, 110c, and 110e included in the first movable pin group 111 enter the magnetic field generating region 129. Therefore, the three movable pins 110a, 110c, and 110e included in the first movable pin group 111 are included. Configured in the middle position (open). The state in which the rotational phase of the rotary table 107 is further advanced from the state shown in Fig. 9E in the rotational direction Dr is shown in Fig. 9F.

於圖9F所示之狀態下,第1可動銷群111中包含之3根可動銷110a、110c、110e分別脫離至磁場產生區域129外。因此,第1可動銷群111中包含之3根可動銷110a、110c、110e配置 於保持位置(封閉)。代替此,而第2可動銷群112中包含之3根可動銷110b、110d、110f進入至磁場產生區域129內,因此,第2可動銷群112中包含之3根可動銷110b、110d、110f配置於中間位置(開放)。將旋轉台107之旋轉相位自圖9C所示之狀態沿旋轉方向Dr進一步前進後之狀態示於圖9D。 In the state shown in FIG. 9F, the three movable pins 110a, 110c, and 110e included in the first movable pin group 111 are separated from the magnetic field generating region 129, respectively. Therefore, the three movable pins 110a, 110c, and 110e included in the first movable pin group 111 are disposed. Keep the position (closed). Instead of this, the three movable pins 110b, 110d, and 110f included in the second movable pin group 112 enter the magnetic field generating region 129. Therefore, the three movable pins 110b, 110d, and 110f included in the second movable pin group 112 are included. Configured in the middle position (open). The state in which the rotational phase of the rotary table 107 is further advanced from the state shown in Fig. 9C in the rotational direction Dr is shown in Fig. 9D.

圖10係用於說明基板處理裝置1之主要部分之電氣構成的方塊圖。 FIG. 10 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus 1.

控制裝置3係依據預先所規定之程式,對旋轉驅動單元103、噴嘴移動單元22、臂驅動單元48、內側升降單元126、外側升降單元128等之動作進行控制。進而,控制裝置3對藥液閥15、水閥43、惰性氣體閥173、惰性氣體流量調整閥174等之開關動作等進行控制。 The control device 3 controls the operations of the rotary drive unit 103, the nozzle moving unit 22, the arm drive unit 48, the inner lift unit 126, the outer lift unit 128, and the like in accordance with a predetermined program. Further, the control device 3 controls switching operations and the like of the chemical liquid valve 15, the water valve 43, the inert gas valve 173, the inert gas flow rate adjusting valve 174, and the like.

圖11係用於說明作為藉由處理單元2執行之處理液處理之清洗處理之一例的流程圖。圖12A~12G係用於說明上述處理之處理例之圖解圖。圖13A、13B係表示可動銷110位於保持位置時及可動銷110位於中間位置時之各個時間之處理液之流回狀態的圖。圖13C係表示基板W之周緣部之處理液及惰性氣體之流動的剖面圖。 FIG. 11 is a flowchart for explaining an example of cleaning processing as the processing liquid processing performed by the processing unit 2. 12A to 12G are diagrams for explaining a processing example of the above processing. Figs. 13A and 13B are views showing a state in which the treatment liquid flows back at each time when the movable pin 110 is at the holding position and when the movable pin 110 is at the intermediate position. Fig. 13C is a cross-sectional view showing the flow of the treatment liquid and the inert gas in the peripheral portion of the substrate W.

一面參照圖1、圖2~圖7及圖11一面進行說明。又,適當參照圖12A~12G及圖13A~13C。 Description will be made with reference to FIGS. 1 , 2 to 7 and 11 . Further, reference is made to Figs. 12A to 12G and Figs. 13A to 13C as appropriate.

處理單元2例如將利用退火裝置或成膜裝置等預處理裝置處理後之基板(以下,有時稱為「未清洗基板」)W設為處理對象。作為基板W之一例,可列舉圓形之矽基板。處理單元2例如對基板W之與表面Wa(另一主面,器件形成面)為相反側之背面 Wb(一主面,器件非形成面)進行清洗。 The processing unit 2 is, for example, a substrate (hereinafter sometimes referred to as "uncleaned substrate") W processed by a pretreatment device such as an annealing device or a film forming device. An example of the substrate W is a circular crucible substrate. The processing unit 2 is, for example, the back surface of the substrate W opposite to the surface Wa (the other main surface, the device forming surface) Wb (one main surface, the device is not formed) is cleaned.

收容有未清洗基板W之載體C係自預處理裝置搬送至基板處理裝置1,並載置於裝載埠LP。於載體C,以使基板W之表面Wa朝上之狀態收容有基板W。控制裝置3藉由分度機械手IR將基板W以表面Wa朝上之狀態自載體C搬送至翻轉單元TU。繼而,控制裝置3藉由翻轉單元TU使搬送來之基板W翻轉(S1:基板翻轉)。藉此,使基板W之背面Wb朝上。其後,控制裝置3藉由中心機械手CR之手部H2,自翻轉單元TU取出基板W,並將基板W以其背面Wb朝向上方之狀態搬入至處理單元2內(步驟S2)。 The carrier C containing the uncleaned substrate W is transferred from the pretreatment apparatus to the substrate processing apparatus 1 and placed on the loading cassette LP. In the carrier C, the substrate W is housed in a state in which the surface Wa of the substrate W faces upward. The control device 3 transports the substrate W from the carrier C to the reversing unit TU with the surface Wa facing upward by the indexing robot IR. Then, the control device 3 inverts the conveyed substrate W by the inverting unit TU (S1: substrate inversion). Thereby, the back surface Wb of the substrate W is made upward. Then, the control device 3 takes out the substrate W from the reversing unit TU by the hand H2 of the center robot CR, and carries the substrate W into the processing unit 2 with the back surface Wb facing upward (step S2).

於搬入基板W之前,藥液噴嘴6退避至設定於旋轉夾頭5之側方之起始位置。又,清洗刷10亦退避至設定於旋轉夾頭5之側方之起始位置。又,封閉永久磁鐵125及開放永久磁鐵127均配置於下位置,因此,驅動用永久磁鐵156分別未受到來自封閉永久磁鐵125之吸引磁力、及來自開放永久磁鐵127之吸引磁力。除來自彈性推壓構件(未圖示)之彈性推壓力以外,未對各可動銷110作用外力,因此,如圖8A所示,各可動銷110位於開放位置。 The chemical liquid nozzle 6 is retracted to a starting position set to the side of the rotary chuck 5 before being carried into the substrate W. Further, the cleaning brush 10 is also retracted to the starting position set to the side of the rotary chuck 5. Further, since both the closed permanent magnet 125 and the open permanent magnet 127 are disposed at the lower position, the driving permanent magnets 156 are not subjected to the attracting magnetic force from the closed permanent magnet 125 and the attracting magnetic force from the open permanent magnet 127, respectively. Except for the elastic pressing force from the elastic pressing member (not shown), no external force is applied to each of the movable pins 110. Therefore, as shown in Fig. 8A, each of the movable pins 110 is located at the open position.

又,封閉永久磁鐵125配置於下位置,因此,封閉永久磁鐵125較大程度地朝下方遠離旋轉台107,故而作用於封閉永久磁鐵125與保護盤側永久磁鐵160之間之排斥磁力較小。因此,保護盤115位於接近旋轉台107之上表面之下位置。由此,於基於可動銷110之基板保持高度與保護盤115之上表面之間確保中心機械手CR之手部H2能夠進入之充分之空間。 Further, since the closed permanent magnet 125 is disposed at the lower position, the closed permanent magnet 125 largely moves away from the turntable 107 downward, so that the repulsive magnetic force acting between the closed permanent magnet 125 and the protective disk side permanent magnet 160 is small. Therefore, the protection disk 115 is located near the upper surface of the rotary table 107. Thereby, a sufficient space for the hand H2 of the center robot CR to enter is ensured between the substrate holding height based on the movable pin 110 and the upper surface of the protective disk 115.

中心機械手CR之手部H2係以於高於可動銷110之 上端之位置保持有基板W之狀態將該基板W搬送至旋轉夾頭5之上方。其後,中心機械手CR之手部H2如圖12A所示,朝向旋轉台107之上表面下降。繼而,控制裝置3控制內側升降單元126,使封閉永久磁鐵125(內側升降磁鐵)上升至上位置(步驟S3,開放磁鐵配置步驟)。藉此,如圖8B所示,各可動銷110自開放位置朝保持位置被驅動,並保持於其保持位置。藉此,由6根可動銷110握持基板W。基板W係以其表面Wa朝向下方且其背面Wb朝向上方之狀態保持於旋轉夾頭5。 The hand H2 of the center robot CR is higher than the movable pin 110 The substrate W is conveyed to the upper side of the rotary chuck 5 while the substrate W is held at the upper end. Thereafter, the hand H2 of the center robot CR is lowered toward the upper surface of the rotary table 107 as shown in Fig. 12A. Then, the control device 3 controls the inner lift unit 126 to raise the closed permanent magnet 125 (inside lift magnet) to the upper position (step S3, open magnet arrangement step). Thereby, as shown in FIG. 8B, each of the movable pins 110 is driven from the open position toward the holding position and held in its holding position. Thereby, the substrate W is held by the six movable pins 110. The substrate W is held by the rotary chuck 5 with its surface Wa facing downward and its back surface Wb facing upward.

其後,中心機械手CR之手部H2經過可動銷110之間而朝旋轉夾頭5之側方退避。 Thereafter, the hand H2 of the center robot CR passes between the movable pins 110 and retreats toward the side of the rotary chuck 5.

又,於封閉永久磁鐵125朝上位置上升之過程中,封閉永久磁鐵125自下方向保護盤側永久磁鐵160接近,而其等永久磁鐵125、160之間之距離縮小,相應於此,作用於其等之間之排斥磁力變大。藉由該排斥磁力,而使保護盤115自旋轉台107之上表面朝向基板W上浮。然後,直至封閉永久磁鐵125到達至上位置時,如圖12B所示,保護盤115到達至與基板W之表面Wa(下表面)隔以微小間隔而接近之接近位置,且形成於導軸117之下端之凸緣120抵接於線性軸承118。藉此,保護盤115保持於上述接近位置。於該狀態下,控制裝置3將惰性氣體閥173打開,而如圖12B所示,使惰性氣體之供給開始(S4:惰性氣體供給開始)。所供給之惰性氣體係自惰性氣體供給管170之上端吐出,並藉由整流構件186等之作用,朝向位於接近位置之保護盤115與基板W之表面Wa(下表面)之間之窄空間,呈以旋轉軸線A1為中心之放射狀吹出。 Further, during the process in which the closed permanent magnet 125 is raised upward, the closed permanent magnet 125 approaches the disk side permanent magnet 160 from the lower direction, and the distance between the permanent magnets 125 and 160 is reduced. The repulsive magnetic force between them becomes larger. By the repulsive magnetic force, the protective disk 115 is caused to float from the upper surface of the rotary table 107 toward the substrate W. Then, until the closed permanent magnet 125 reaches the upper position, as shown in FIG. 12B, the protective disk 115 reaches an approaching position close to the surface Wa (lower surface) of the substrate W with a slight interval, and is formed on the guide shaft 117. The lower end flange 120 abuts against the linear bearing 118. Thereby, the protective disk 115 is held at the above-mentioned close position. In this state, the control device 3 opens the inert gas valve 173, and as shown in Fig. 12B, the supply of the inert gas is started (S4: the supply of the inert gas is started). The supplied inert gas system is discharged from the upper end of the inert gas supply pipe 170, and is moved toward the narrow space between the protective disk 115 located at the approximate position and the surface Wa (lower surface) of the substrate W by the action of the rectifying member 186 or the like. Radially blown around the rotation axis A1.

其後,控制裝置3控制旋轉驅動單元103,使旋轉台107之旋轉開始(旋轉台旋轉步驟),藉此,如圖12C所示,使基板W繞旋轉軸線A1旋轉(步驟S5)。基板W之旋轉速度上升至預先規定之液體處理速度(為300~1500rpm之範圍內,例如500rpm),並維持為該液體處理速度。 Thereafter, the control device 3 controls the rotation driving unit 103 to start the rotation of the rotary table 107 (rotation table rotation step), whereby the substrate W is rotated about the rotation axis A1 as shown in Fig. 12C (step S5). The rotation speed of the substrate W is raised to a predetermined liquid processing speed (in the range of 300 to 1500 rpm, for example, 500 rpm), and is maintained at the liquid processing speed.

基板W之旋轉速度達到液體處理速度之後,控制裝置3進行向基板W之背面Wb供給FOM之FOM供給步驟(處理液供給步驟,步驟S6)。於FOM供給步驟(S6)中,控制裝置3藉由控制噴嘴移動單元22而使藥液噴嘴6自起始位置移動至中央位置。藉此,藥液噴嘴6配置於基板W之中央部之上方。藥液噴嘴6配置於基板W之上方之後,控制裝置3將藥液閥15打開,藉此,FOM自藥液噴嘴6之吐出口吐出並著液於基板W之背面Wb之中央部。供給至基板W之背面Wb之中央部之FOM受到基板W之旋轉所產生之離心力之影響而朝向基板W之背面Wb之周緣部呈放射狀擴展。因此,FOM可遍及基板W之背面Wb之整個區域。 After the rotation speed of the substrate W reaches the liquid processing speed, the control device 3 performs a FOM supply step of supplying the FOM to the back surface Wb of the substrate W (processing liquid supply step, step S6). In the FOM supply step (S6), the control device 3 moves the chemical liquid nozzle 6 from the home position to the center position by controlling the nozzle moving unit 22. Thereby, the chemical liquid nozzle 6 is disposed above the central portion of the substrate W. After the chemical liquid nozzle 6 is disposed above the substrate W, the control device 3 opens the chemical liquid valve 15, whereby the FOM is discharged from the discharge port of the chemical liquid nozzle 6 and is immersed in the central portion of the back surface Wb of the substrate W. The FOM supplied to the central portion of the back surface Wb of the substrate W is radially expanded toward the peripheral edge portion of the back surface Wb of the substrate W by the centrifugal force generated by the rotation of the substrate W. Therefore, the FOM can extend over the entire area of the back surface Wb of the substrate W.

於FOM供給步驟(S6)中,藉由FOM中包含之臭氧之氧化作用,而於作為矽基板之基板W之背面Wb形成氧化矽膜。又,藉由FOM中包含之氫氟酸之氧化膜蝕刻作用,而將形成於基板W之背面Wb之劃痕(缺口、凹處等)去除,又,亦自基板W之背面Wb去除異物(顆粒、雜質、該基板W之背面Wb之剝落物等)。 In the FOM supply step (S6), a ruthenium oxide film is formed on the back surface Wb of the substrate W as a tantalum substrate by the oxidation of ozone contained in the FOM. Further, by the etching action of the hydrofluoric acid oxide film contained in the FOM, scratches (notches, recesses, and the like) formed on the back surface Wb of the substrate W are removed, and foreign matter is also removed from the back surface Wb of the substrate W ( Particles, impurities, exfoliates of the back surface Wb of the substrate W, and the like).

於FOM供給步驟(S6)中,自惰性氣體供給管170之上端吐出之惰性氣體係藉由整流構件186等之作用,而朝向位於接近位置之保護盤115與基板W之表面Wa(下表面)之間之窄空間,呈以旋轉軸線A1為中心之放射狀吹出。該惰性氣體如圖13C所 示,進而藉由形成在形成於配置於保護盤115之周緣部之罩部191之圓環板部192之節流部190與基板W之周緣部之間的流孔而加速,於基板W之側方形成高速之吹出氣流。於本實施形態中,藉由使用保護盤115之對基板W之表面Wa(下表面)之惰性氣體之供給,並非完全防止處理液朝基板W之表面Wa(下表面)流回,而僅使處理液反而流回至基板W之表面Wa(下表面)之周緣區域(距離基板W之周端為1.0mm左右之微小範圍),對該表面Wa(下表面)之周緣區域進行清洗。而且,藉由形成高速之吹出氣流,而精度良好地控制其流回量。該流回量依存於對於基板W之上表面之處理液之供給流量、對於基板W之下表面之惰性氣體之供給流量、基板W之旋轉速度等。 In the FOM supply step (S6), the inert gas system discharged from the upper end of the inert gas supply pipe 170 is directed toward the protective disk 115 located at the approximate position and the surface Wa (lower surface) of the substrate W by the action of the rectifying member 186 or the like. The narrow space between them is radially blown around the rotation axis A1. The inert gas is as shown in Figure 13C. Further, it is accelerated by a flow hole formed between the throttle portion 190 formed in the annular plate portion 192 of the cover portion 191 disposed on the peripheral edge portion of the protective disk 115 and the peripheral edge portion of the substrate W, and is formed on the substrate W. The side forms a high velocity blown air stream. In the present embodiment, by using the supply of the inert gas to the surface Wa (lower surface) of the substrate W of the protective disk 115, the treatment liquid is not completely prevented from flowing back toward the surface Wa (lower surface) of the substrate W, but only The treatment liquid flows back to the peripheral region of the surface Wa (lower surface) of the substrate W (small range of about 1.0 mm from the circumferential end of the substrate W), and the peripheral region of the surface Wa (lower surface) is cleaned. Further, by forming a high-speed blown air stream, the amount of return is accurately controlled. The flow amount depends on the supply flow rate of the treatment liquid on the upper surface of the substrate W, the supply flow rate of the inert gas to the lower surface of the substrate W, the rotation speed of the substrate W, and the like.

又,於FOM供給步驟(S6)中,控制裝置3控制外側升降單元128,使開放永久磁鐵127自截至當時為止之下位置上升至上位置,並保持於上位置。以與來自藥液噴嘴6之FOM之吐出大致相同之時序,控制裝置3將開放永久磁鐵127配置於上位置。於開放永久磁鐵127配置於上位置之狀態下,6根可動銷110中與同時通過磁場產生區域129之3個驅動用永久磁鐵156對應之3個可動銷110自保持位置配置至中間位置。而且,伴隨因旋轉台107之旋轉所致之各可動銷110之相位變化,而如圖12C、12D所示,配置於中間位置之3個可動銷110於第1可動銷群111中包含之3根可動銷110與第2可動銷群112中包含之3根可動銷110之間切換。藉此,如圖9A~9C所示,於由第1可動銷群111中包含之3根可動銷110支撐基板W之狀態(參照圖9A等)與由第2可動銷群112中包含之3根可動銷110支撐基板W之狀態(參照圖9C等)之 間轉變。即,可伴隨旋轉台107之旋轉相位之變化而使基板W之周緣部之可動銷110之接觸支撐位置變化。 Further, in the FOM supply step (S6), the control device 3 controls the outer lift unit 128 to raise the open permanent magnet 127 from the position up to the upper position and to the upper position. The control device 3 arranges the open permanent magnet 127 at the upper position at substantially the same timing as the discharge from the FOM of the chemical liquid nozzle 6. In the state where the open permanent magnet 127 is placed at the upper position, the three movable pins 110 corresponding to the three driving permanent magnets 156 that simultaneously pass through the magnetic field generating region 129 among the six movable pins 110 are disposed from the holding position to the intermediate position. Further, as the phase of each of the movable pins 110 due to the rotation of the rotary table 107 changes, as shown in FIGS. 12C and 12D, the three movable pins 110 disposed at the intermediate position are included in the first movable pin group 111. The root movable pin 110 is switched between the three movable pins 110 included in the second movable pin group 112. As a result, as shown in FIGS. 9A to 9C, the substrate W is supported by the three movable pins 110 included in the first movable pin group 111 (see FIG. 9A and the like) and the third movable pin group 112 is included. The state in which the root movable pin 110 supports the substrate W (refer to FIG. 9C, etc.) Change between. In other words, the contact support position of the movable pin 110 of the peripheral edge portion of the substrate W can be changed in accordance with the change in the rotational phase of the rotary table 107.

對基板W上之可動銷110之理想之支撐位置(圓周方向之6處)上之FOM之流回進行研究。於可動銷110位於保持位置之狀態下,供給至基板W之上表面之FOM如圖13A所示,與接觸基板W之周端面之上軸部152產生干涉。因此,於在理想之支撐位置(圓周方向之6處)可動銷110位於保持位置之狀態下,無法使供給至基板W之上表面之FOM經由基板W之周端面流回至基板W之下表面之周緣區域。 The flow back of the FOM on the ideal support position (6 in the circumferential direction) of the movable pin 110 on the substrate W was investigated. When the movable pin 110 is in the holding position, the FOM supplied to the upper surface of the substrate W interferes with the shaft portion 152 on the circumferential end surface of the contact substrate W as shown in FIG. 13A. Therefore, in a state where the movable pin 110 is at the holding position at the ideal supporting position (6 in the circumferential direction), the FOM supplied to the upper surface of the substrate W cannot be returned to the lower surface of the substrate W via the peripheral end surface of the substrate W. The peripheral area.

另一方面,於可動銷110位於中間位置之狀態下,如圖13B所示,與基板W之周端面形成有既定之間隙(微小間隙)。關於該間隙,可藉由細微地調整開放永久磁鐵127之上位置之位置(即,開放永久磁鐵127與驅動用永久磁鐵156之間之間隔)而將間隙調整為理想之大小。可經由該間隙使供給至基板W之上表面之FOM經由基板W之周端面流回至基板W之下表面之周緣區域。例如,間隙為零點幾mm之級別(微小間隙)。於該情形時,可藉由FOM之毛細管力經由微小間隙使FOM流回至基板W之周端面及基板W之下表面之周緣區域。 On the other hand, in a state where the movable pin 110 is at the intermediate position, as shown in FIG. 13B, a predetermined gap (small gap) is formed with the circumferential end surface of the substrate W. With regard to this gap, the gap can be adjusted to a desired size by finely adjusting the position of the position above the open permanent magnet 127 (that is, the distance between the open permanent magnet 127 and the driving permanent magnet 156). The FOM supplied to the upper surface of the substrate W can flow back to the peripheral region of the lower surface of the substrate W via the peripheral end surface of the substrate W via the gap. For example, the gap is a fraction of a few mm (small gap). In this case, the FOM can be caused to flow back to the peripheral end surface of the substrate W and the peripheral region of the lower surface of the substrate W via the minute gap by the capillary force of the FOM.

若自FOM之吐出開始起經過既定之期間,則FOM供給步驟(S6)結束。具體而言,控制裝置3將藥液閥15關閉,而停止自藥液噴嘴6吐出FOM。又,控制裝置3使藥液噴嘴6自中央位置移動至起始位置。藉此,藥液噴嘴6自基板W之上方退避。 The FOM supply step (S6) ends when a predetermined period has elapsed since the start of the discharge of the FOM. Specifically, the control device 3 closes the chemical liquid valve 15 and stops the discharge of the FOM from the chemical liquid nozzle 6. Further, the control device 3 moves the chemical liquid nozzle 6 from the center position to the home position. Thereby, the chemical liquid nozzle 6 is retracted from above the substrate W.

FOM供給步驟(S6)結束後,緊接著開始向基板W之背面Wb供給作為淋洗液之水(S7:淋洗步驟,處理液供給步驟)。 After the completion of the FOM supply step (S6), the water as the eluent is supplied to the back surface Wb of the substrate W (S7: elution step, treatment liquid supply step).

具體而言,控制裝置3如圖12E所示,將水閥43打開,而朝向基板W之背面Wb之中央部自水噴嘴41吐出水。自水噴嘴41吐出之水著液於由FOM覆蓋之基板W之背面Wb之中央部。著液於基板W之背面Wb之中央部之水受到基板W之旋轉所產生之離心力之影響而於基板W之背面Wb上朝向基板W之周緣部流動,並朝基板W之背面Wb之整個區域擴展。因此,基板W上之FOM被水沖走至外側,而排出至基板W之周圍。藉此,附著於基板W之背面Wb之FOM被置換為水。 Specifically, as shown in FIG. 12E, the control device 3 opens the water valve 43 and discharges water from the water nozzle 41 toward the center portion of the back surface Wb of the substrate W. The water discharged from the water nozzle 41 is immersed in the central portion of the back surface Wb of the substrate W covered by the FOM. The water in the central portion of the back surface Wb of the substrate W is affected by the centrifugal force generated by the rotation of the substrate W, and flows toward the peripheral portion of the substrate W on the back surface Wb of the substrate W, and faces the entire area of the back surface Wb of the substrate W. Expansion. Therefore, the FOM on the substrate W is washed away to the outside by the water and discharged to the periphery of the substrate W. Thereby, the FOM attached to the back surface Wb of the substrate W is replaced with water.

又,於淋洗步驟(S7)中,開放永久磁鐵127保持於上位置。於開放永久磁鐵127配置於上位置之狀態下,6根可動銷110中與同時通過磁場產生區域129之3個驅動用永久磁鐵156對應之3個可動銷110自保持位置配置至中間位置。而且,伴隨因旋轉台107之旋轉所致之各可動銷110之相位變化,而如圖12E、12F所示,配置於中間位置之3個可動銷110於第1可動銷群111中包含之3根可動銷110與第2可動銷群112中包含之3根可動銷110之間切換。藉此,如圖9A~9C所示,於由第1可動銷群111中包含之3根可動銷110支撐基板W之狀態(參照圖9A等)與由第2可動銷群112中包含之3根可動銷110支撐基板W之狀態(參照圖9C等)之間轉變。即,可伴隨旋轉台107之旋轉相位之變化而使可動銷110對基板W之支撐位置變化。 Further, in the elution step (S7), the open permanent magnet 127 is held at the upper position. In the state where the open permanent magnet 127 is placed at the upper position, the three movable pins 110 corresponding to the three driving permanent magnets 156 that simultaneously pass through the magnetic field generating region 129 among the six movable pins 110 are disposed from the holding position to the intermediate position. Further, as the phase of each of the movable pins 110 due to the rotation of the rotary table 107 changes, as shown in FIGS. 12E and 12F, the three movable pins 110 disposed at the intermediate position are included in the first movable pin group 111. The root movable pin 110 is switched between the three movable pins 110 included in the second movable pin group 112. As a result, as shown in FIGS. 9A to 9C, the substrate W is supported by the three movable pins 110 included in the first movable pin group 111 (see FIG. 9A and the like) and the third movable pin group 112 is included. The root movable pin 110 supports the transition between the state of the substrate W (refer to FIG. 9C and the like). That is, the support position of the movable pin 110 to the substrate W can be changed in accordance with the change in the rotational phase of the rotary table 107.

對基板W上之可動銷110之支撐位置(圓周方向之6處)上之FOM之流回進行研究。於可動銷110位於保持位置之狀態下,供給至基板W之上表面之FOM如圖13A所示,與接觸基板W之周端面之上軸部152產生干涉。因此,無法使供給至基板W之 上表面之FOM經由基板W之周端面流回至基板W之下表面之周緣區域。 The flow back of the FOM on the support position (6 in the circumferential direction) of the movable pin 110 on the substrate W was investigated. When the movable pin 110 is in the holding position, the FOM supplied to the upper surface of the substrate W interferes with the shaft portion 152 on the circumferential end surface of the contact substrate W as shown in FIG. 13A. Therefore, it is impossible to supply to the substrate W. The FOM of the upper surface flows back to the peripheral region of the lower surface of the substrate W via the peripheral end surface of the substrate W.

另一方面,於可動銷110位於中間位置之狀態下,如圖13B所示,與基板W之周端面形成有既定之間隙(微小間隙)。關於該間隙,可藉由細微地調整開放永久磁鐵127之上位置之位置(即,開放永久磁鐵127與驅動用永久磁鐵156之間之間隔)而將間隙調整為理想之大小。可經由該間隙使供給至基板W之上表面之水經由基板W之周端面流回至基板W之下表面之周緣區域。例如,間隙為零點幾mm之級別(微小間隙)。於該情形時,可藉由FOM之毛細管力經由微小間隙使FOM流回至基板W之周端面及基板W之下表面之周緣區域。藉此,可將附著於基板W之周端面或基板W之下表面之周緣區域之FOM沖走。 On the other hand, in a state where the movable pin 110 is at the intermediate position, as shown in FIG. 13B, a predetermined gap (small gap) is formed with the circumferential end surface of the substrate W. With regard to this gap, the gap can be adjusted to a desired size by finely adjusting the position of the position above the open permanent magnet 127 (that is, the distance between the open permanent magnet 127 and the driving permanent magnet 156). Water supplied to the upper surface of the substrate W can be returned to the peripheral region of the lower surface of the substrate W via the peripheral end surface of the substrate W via the gap. For example, the gap is a fraction of a few mm (small gap). In this case, the FOM can be caused to flow back to the peripheral end surface of the substrate W and the peripheral region of the lower surface of the substrate W via the minute gap by the capillary force of the FOM. Thereby, the FOM attached to the peripheral end surface of the substrate W or the peripheral region of the lower surface of the substrate W can be washed away.

若自水之吐出開始起經過既定之期間,則控制裝置3控制臂驅動單元48,而如圖12F所示,執行利用清洗刷10之基板W之背面Wb之擦洗清洗(S8:刷清洗步驟,處理液供給步驟)。藉此,對基板W之背面Wb一面供給水一面利用清洗刷10進行擦洗清洗。具體而言,控制裝置3控制臂驅動單元48,使擺動臂47繞擺動軸線A2擺動,而使清洗刷10自起始位置配置至基板W之上方,並且使清洗刷10下降,並將清洗刷10之清洗面10a壓抵於基板W之背面Wb。繼而,控制裝置3如圖12G所示,控制臂驅動單元48,使清洗刷10之壓抵位置於基板W之中央部與基板W之周緣部之間移動(掃描)。藉此,清洗刷10之壓抵位置掃描基板W之背面Wb之整個區域,而藉由清洗刷10擦洗基板W之背面Wb之整個區域。於刷清洗步驟(S8)中,FOM供給步驟(S6)中剝離之異物 藉由利用清洗刷10之擦洗而被刮取。而且,由清洗刷10刮取之異物被水沖走。藉此,可將經剝離之異物自基板W之背面Wb去除。 When a predetermined period of time has elapsed since the start of the discharge of water, the control device 3 controls the arm drive unit 48, and as shown in FIG. 12F, performs scrub cleaning with the back surface Wb of the substrate W of the cleaning brush 10 (S8: brush cleaning step, Treatment liquid supply step). Thereby, the back surface Wb of the substrate W is subjected to scrub cleaning by the cleaning brush 10 while supplying water. Specifically, the control device 3 controls the arm driving unit 48 to swing the swing arm 47 about the swing axis A2, thereby disposing the cleaning brush 10 from the initial position to the upper side of the substrate W, and lowering the cleaning brush 10, and cleaning the brush The cleaning surface 10a of 10 is pressed against the back surface Wb of the substrate W. Then, as shown in FIG. 12G, the control device 3 controls the arm driving unit 48 to move (scan) the pressing position of the cleaning brush 10 between the central portion of the substrate W and the peripheral portion of the substrate W. Thereby, the entire area of the back surface Wb of the substrate W is scanned by the pressing position of the cleaning brush 10, and the entire area of the back surface Wb of the substrate W is scrubbed by the cleaning brush 10. In the brush cleaning step (S8), the foreign matter peeled off in the FOM supply step (S6) It is scraped by scrubbing with the cleaning brush 10. Moreover, the foreign matter scraped off by the cleaning brush 10 is washed away by the water. Thereby, the peeled foreign matter can be removed from the back surface Wb of the substrate W.

清洗刷10之去向移動進行預先規定之次數(例如4次)之後,控制裝置3控制臂驅動單元48,使清洗刷10自旋轉夾頭5之上方返回至起始位置。藉此,刷清洗步驟(S8)結束。又,控制裝置3將水閥43維持為打開狀態。藉此,將作為淋洗液之水供給至基板W之背面Wb,而將由清洗刷10刮取之異物排出至基板W外(S9:最終淋洗步驟,處理液供給步驟)。 After the cleaning brush 10 has been moved for a predetermined number of times (for example, four times), the control device 3 controls the arm driving unit 48 to return the cleaning brush 10 from above the rotating chuck 5 to the home position. Thereby, the brush cleaning step (S8) ends. Further, the control device 3 maintains the water valve 43 in an open state. Thereby, the water as the eluent is supplied to the back surface Wb of the substrate W, and the foreign matter scraped off by the cleaning brush 10 is discharged to the outside of the substrate W (S9: final rinsing step, processing liquid supply step).

若自水之供給開始起經過既定之期間,則控制裝置3將水閥43關閉,而停止自水噴嘴41吐出水。又,控制裝置3將惰性氣體閥173關閉,而停止自惰性氣體供給管170吐出惰性氣體。又,控制裝置3控制外側升降單元128,而使開放永久磁鐵127下降至下位置。自此之後,基板W由6根可動銷110夾持,藉此,牢固地保持基板W。 When a predetermined period of time has elapsed since the start of the supply of water, the control device 3 closes the water valve 43 and stops the discharge of water from the water nozzle 41. Further, the control device 3 closes the inert gas valve 173 and stops the discharge of the inert gas from the inert gas supply pipe 170. Further, the control device 3 controls the outer lift unit 128 to lower the open permanent magnet 127 to the lower position. After that, the substrate W is sandwiched by the six movable pins 110, whereby the substrate W is firmly held.

繼而,進行使基板W乾燥之旋轉乾燥步驟(步驟S10)。具體而言,控制裝置3控制旋轉驅動單元17,藉此,使基板W加速至較自FOM供給步驟(S6)至最終淋洗步驟(S9)之旋轉速度大之乾燥旋轉速度(例如數千rpm),使基板W以乾燥旋轉速度旋轉。藉此,對基板W上之液體施加較大之離心力,而將附著於基板W之液體甩至基板W之周圍。以此方式,自基板W去除液體,而使基板W乾燥。 Then, a spin drying step of drying the substrate W is performed (step S10). Specifically, the control device 3 controls the rotary drive unit 17, whereby the substrate W is accelerated to a dry rotation speed (for example, several thousand rpm) which is larger than the rotation speed from the FOM supply step (S6) to the final rinse step (S9). ), the substrate W is rotated at a dry rotation speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is rubbed around the substrate W. In this way, the liquid is removed from the substrate W, and the substrate W is dried.

繼而,若基板W之高速旋轉開始之後經過既定之期間,則控制裝置3控制旋轉驅動單元17,藉此,使利用旋轉夾頭5之基板W之旋轉停止(步驟S11)。 Then, when a predetermined period of time has elapsed after the high-speed rotation of the substrate W is started, the control device 3 controls the rotation driving unit 17 to stop the rotation of the substrate W by the rotary chuck 5 (step S11).

繼而,控制裝置3控制內側升降單元126,藉此,使封閉永久磁鐵125朝下方位置下降(步驟S12)。藉此,封閉永久磁鐵125與保護盤側永久磁鐵160之間之距離擴大,而其等之間之磁斥力逐漸減少。伴隨於此,保護盤115朝向旋轉台107之上表面下降。藉此,於保護盤115之上表面與基板W之表面Wa(下表面)之間確保僅能夠使中心機械手CR之手部H2進入之空間。另一方面,封閉永久磁鐵125與驅動用永久磁鐵156不對向,因此,將可動銷110朝保持位置施壓之外力消失,可動銷110受到來自彈性推壓構件(未圖示)之彈性推壓力而朝開放位置配置。藉此,將基板W之握持解除。 Then, the control device 3 controls the inner lift unit 126, whereby the closed permanent magnet 125 is lowered toward the lower position (step S12). Thereby, the distance between the closed permanent magnet 125 and the protective disk side permanent magnet 160 is enlarged, and the magnetic repulsion between them is gradually reduced. Along with this, the protective disk 115 is lowered toward the upper surface of the rotary table 107. Thereby, a space in which only the hand H2 of the center robot CR can enter is secured between the upper surface of the protective disk 115 and the surface Wa (lower surface) of the substrate W. On the other hand, since the closed permanent magnet 125 does not oppose the driving permanent magnet 156, the force is released when the movable pin 110 is pressed toward the holding position, and the movable pin 110 receives the elastic pressing force from the elastic pressing member (not shown). And configured towards an open location. Thereby, the holding of the substrate W is released.

繼而,將基板W自處理腔室4內搬出(步驟S13)。具體而言,控制裝置3係於所有噴嘴等自旋轉夾頭5之上方退避之狀態下,控制中心機械手CR,而使手部H2進入至保護盤115與基板W之表面Wa(下表面)之間所確保之空間。繼而,手部H2抄取由可動銷110保持之基板W,其後,朝旋轉夾頭5之側方退避。藉此,將清洗處理過之基板W自處理腔室4搬出。 Then, the substrate W is carried out from the processing chamber 4 (step S13). Specifically, the control device 3 controls the center robot CR in a state where all the nozzles or the like are retracted from above the rotary chuck 5, and the hand H2 is brought into the surface Wa (lower surface) of the protective disk 115 and the substrate W. The space between the spaces. Then, the hand H2 picks up the substrate W held by the movable pin 110, and then retreats toward the side of the rotary chuck 5. Thereby, the cleaned substrate W is carried out from the processing chamber 4.

控制裝置3藉由中心機械手CR之手部H2將清洗處理過之基板W搬送至翻轉單元TU。繼而,控制裝置3藉由翻轉單元TU使搬送來之基板W翻轉(步驟S14)。藉此,基板W之表面Wa朝上。其後,控制裝置3藉由分度機械手IR之手部H1自翻轉單元TU取出基板W,並將清洗處理過之基板W以其表面Wa朝上之狀態收容至載體C。收容有清洗處理過之基板W之載體C自基板處理裝置1朝向曝光裝置等後處理裝置搬送。 The control device 3 transports the cleaned substrate W to the reversing unit TU by the hand H2 of the center robot CR. Then, the control device 3 inverts the conveyed substrate W by the reversing unit TU (step S14). Thereby, the surface Wa of the substrate W faces upward. Thereafter, the control device 3 takes out the substrate W from the reversing unit TU by the hand H1 of the indexing robot IR, and accommodates the cleaned substrate W to the carrier C with its surface Wa facing upward. The carrier C containing the cleaned substrate W is transported from the substrate processing apparatus 1 to a post-processing apparatus such as an exposure apparatus.

根據以上情況,根據本實施形態,與旋轉台107之旋 轉及處理液之供給(圖11之S6~S9)並行地,將開放永久磁鐵127配置至上位置。於開放永久磁鐵127配置於上位置之狀態下,伴隨因旋轉台107之旋轉所致之各可動銷110之相位變化,而於由第1可動銷群111中包含之3根可動銷110支撐基板W之狀態(參照圖9A等)與由第2可動銷群112中包含之3根可動銷110支撐基板W之狀態(參照圖9C等)之間轉變。即,可伴隨旋轉台107之旋轉相位之變化而使基板W上之基於可動銷110之接觸支撐位置變化。因此,可對基板W之周緣部之整個區域供給處理液(FOM、水),藉此,可使用處理液不產生處理殘留物地良好地對基板W之周緣部進行處理。 According to the above, according to the embodiment, the rotation with the rotary table 107 In turn, the supply of the processing liquid (S6 to S9 in Fig. 11) is placed in parallel with the open permanent magnet 127. In a state in which the open permanent magnet 127 is placed at the upper position, the phase of each of the movable pins 110 due to the rotation of the rotary table 107 changes, and the substrate is supported by the three movable pins 110 included in the first movable pin group 111. The state of W (see FIG. 9A and the like) is changed between the state in which the substrate W is supported by the three movable pins 110 included in the second movable pin group 112 (see FIG. 9C and the like). That is, the contact support position on the substrate W by the movable pin 110 can be changed in accordance with the change in the rotational phase of the rotary table 107. Therefore, the processing liquid (FOM, water) can be supplied to the entire region of the peripheral portion of the substrate W, whereby the peripheral portion of the substrate W can be satisfactorily treated without using the processing liquid to generate the processing residue.

以上,對本發明之一實施形態進行了說明,但本案發明亦能夠以其他形態實施。 Although an embodiment of the present invention has been described above, the present invention can be embodied in other forms.

例如,於與旋轉軸線A3正交之方向上,分別於內側配置封閉永久磁鐵125且於外側配置開放永久磁鐵127,但該配置位置亦可相反。 For example, in the direction orthogonal to the rotation axis A3, the closing permanent magnets 125 are disposed inside and the open permanent magnets 127 are disposed outside, but the arrangement positions may be reversed.

又,設為開放永久磁鐵127之磁極方向沿著上下方向而進行了說明,但開放永久磁鐵127之磁極方向亦可為相對於可動銷110之旋轉軸線A3正交之方向。 Further, although the magnetic pole direction of the open permanent magnet 127 has been described as being along the vertical direction, the magnetic pole direction of the open permanent magnet 127 may be orthogonal to the rotation axis A3 of the movable pin 110.

又,保證作為用以於與驅動用永久磁鐵156之間產生吸引磁力之磁鐵之功能、及作為用以於與保護盤側永久磁鐵160之間產生排斥磁力之磁鐵之功能,但亦可與封閉永久磁鐵125分開地設置用以於與保護盤側永久磁鐵160之間產生排斥磁力之磁鐵,而使封閉永久磁鐵125保證作為用以於與驅動用永久磁鐵156之間產生吸引磁力之磁鐵之功能。 Further, it is a function of a magnet for generating a magnetic attraction force with the permanent magnet 156 for driving, and a magnet for generating a repulsive magnetic force between the permanent magnet 160 for protecting the disk, but it is also possible to be closed. The permanent magnets 125 are separately provided with a magnet for generating a repulsive magnetic force with the protective disk side permanent magnet 160, and the closed permanent magnet 125 is guaranteed to function as a magnet for attracting a magnetic force with the driving permanent magnet 156. .

於該情形時,封閉永久磁鐵125之磁極方向亦可為相對於可動銷110之旋轉軸線A3正交之方向而並非上下方向。 In this case, the direction of the magnetic pole of the closed permanent magnet 125 may be a direction orthogonal to the rotation axis A3 of the movable pin 110, and may not be the up-and-down direction.

又,於上述實施形態中,設為與3根可動銷110對應之驅動用永久磁鐵156(即3個驅動用永久磁鐵156)同時通過磁場產生區域129,但亦可設為全部即6個驅動用永久磁鐵156中與1根或2根可動銷110對應之驅動用永久磁鐵156(即,1個或2個驅動用永久磁鐵156)同時通過磁場產生區域129。於該情形時,並非由包括3根可動銷110之第1及第2可動銷群111、112交換支撐基板W之構成,而將6根可動銷110中1根或2根可動銷110同時配置於中間位置,並針對6根可動銷110依次進行此種動作。 Further, in the above-described embodiment, the driving permanent magnets 156 corresponding to the three movable pins 110 (that is, the three driving permanent magnets 156) simultaneously pass through the magnetic field generating region 129, but may be all six driving The driving permanent magnet 156 (that is, one or two driving permanent magnets 156) corresponding to one or two movable pins 110 in the permanent magnet 156 simultaneously passes through the magnetic field generating region 129. In this case, the support substrate W is not exchanged between the first and second movable pin groups 111 and 112 including the three movable pins 110, and one of the six movable pins 110 or the two movable pins 110 are simultaneously disposed. In the middle position, this action is sequentially performed for the six movable pins 110.

又,設為藉由將開放永久磁鐵127配置至上位置而將可動銷110自保持位置配置至中間位置進行了說明,但亦可為於將開放永久磁鐵127配置於上位置之狀態下可動銷110仍然配置於保持位置。然而,於該情形時,可藉由在開放永久磁鐵127與驅動用永久磁鐵156之間產生之吸引磁力而緩和可動銷110(上軸部152)對基板W之周端緣之推壓力。即,不藉由將開放永久磁鐵127配置於上位置而使可動銷110移位,但可調整可動銷110之推壓力(開關力)。於該情形時,可藉由調整開放永久磁鐵127之上位置而更細微地調整可動銷110之推壓力(開關力)。即,不僅可進行間隙之調整,而且可進行微妙之推壓力(夾持力)之調整。 Further, although the movable permanent magnet 127 is disposed at the upper position and the movable pin 110 is disposed from the holding position to the intermediate position, the movable pin 110 may be disposed in a state where the open permanent magnet 127 is disposed at the upper position. Still configured in the hold position. However, in this case, the pressing force generated by the movable pin 110 (upper shaft portion 152) against the peripheral edge of the substrate W can be alleviated by the attraction magnetic force generated between the open permanent magnet 127 and the driving permanent magnet 156. That is, the movable pin 110 is not displaced by disposing the open permanent magnet 127 at the upper position, but the pressing force (switching force) of the movable pin 110 can be adjusted. In this case, the pressing force (switching force) of the movable pin 110 can be finely adjusted by adjusting the position above the open permanent magnet 127. That is, not only the adjustment of the gap but also the adjustment of the subtle pressing force (clamping force) can be performed.

又,設為藉由開放永久磁鐵127與驅動用永久磁鐵156之間產生之吸引磁力、及封閉永久磁鐵125與驅動用永久磁鐵156之間產生之吸引磁力使驅動用永久磁鐵156驅動者而進行了說明,但亦可藉由開放永久磁鐵127與驅動用永久磁鐵156之間產生 之排斥磁力及/或開放永久磁鐵127與驅動用永久磁鐵156之間產生之排斥磁力使驅動用永久磁鐵156驅動。 In addition, the driving permanent magnet 156 is driven by the attraction magnetic force generated between the open permanent magnet 127 and the driving permanent magnet 156 and the attraction magnetic force generated between the closing permanent magnet 125 and the driving permanent magnet 156. Although it is described, it can also be generated by opening the permanent magnet 127 and the driving permanent magnet 156. The repulsive magnetic force and/or the repulsive magnetic force generated between the open permanent magnet 127 and the driving permanent magnet 156 drives the driving permanent magnet 156.

又,設置封閉永久磁鐵125作為將驅動用永久磁鐵156施壓至保持位置之施壓單元,但亦可設置將驅動用永久磁鐵156施壓至保持位置之彈簧等彈性推壓單元而代替封閉永久磁鐵125。 Further, the closing permanent magnet 125 is provided as a pressing unit that presses the driving permanent magnet 156 to the holding position, but an elastic pressing unit such as a spring that presses the driving permanent magnet 156 to the holding position may be provided instead of the closing permanent. Magnet 125.

又,將可動銷110之個數設為6個,但亦可設為6個以上。於該情形時,只要可動銷110之個數為偶複數個,便可將第1可動銷群111中包含之可動銷110之個數與第2可動銷群112中包含之可動銷110之個數設為彼此相同之數量,就佈局之觀點而言較為理想。例如,於將可動銷110之個數設為8個之情形時,各可動銷群111、112中包含之可動銷之個數成為4個,於該情形時,開放永久磁鐵127之個數亦為與可動銷110之個數為相同數量之4個。例如,設為處理對象面為基板W之背面(器件非形成面)Wb而進行了說明,但亦可將基板W之表面(器件形成面)Wa設為處理對象面。於該情形時,亦可廢除翻轉單元TU。 Moreover, the number of the movable pins 110 is six, but it may be six or more. In this case, as long as the number of the movable pins 110 is even or plural, the number of the movable pins 110 included in the first movable pin group 111 and the movable pin 110 included in the second movable pin group 112 can be used. The number is set to be the same as each other, which is ideal from the viewpoint of layout. For example, when the number of the movable pins 110 is eight, the number of movable pins included in each of the movable pin groups 111 and 112 is four. In this case, the number of open permanent magnets 127 is also The number is the same as the number of the movable pins 110. For example, the surface to be processed is the back surface (device non-formation surface) Wb of the substrate W. However, the surface (device formation surface) Wa of the substrate W may be a processing target surface. In this case, the flip unit TU can also be revoked.

又,一連串處理液處理並不限於異物之去除,亦可以金屬之去除、埋設於膜中之雜質之去除為目的。又,一連串處理液處理亦可為蝕刻處理而並非清洗處理。 Further, the series of treatment liquid treatments is not limited to the removal of foreign matter, and the removal of impurities by metal and the removal of impurities buried in the membrane may be used. Further, the series of treatment liquid treatments may be an etching treatment and not a cleaning treatment.

於上述實施形態中,使用FOM作為藥液,但向基板W供給之藥液係例如包含硫酸、醋酸、硝酸、鹽酸、氫氟酸、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼金屬(例如,TMAH:四甲基氫氧化銨等)、有機溶劑(例如,IPA:異丙醇等)、及界面活性劑、抗腐蝕劑之至少1個的液體。 In the above embodiment, FOM is used as the chemical liquid, but the chemical liquid supplied to the substrate W includes, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, or organic acid (for example, citric acid, oxalic acid). Or a liquid of at least one of an organic alkali metal (for example, TMAH: tetramethylammonium hydroxide), an organic solvent (for example, IPA: isopropyl alcohol, etc.), and a surfactant and an anticorrosive agent.

作為向基板W供給之藥液,更佳為可使用稀釋氫氟 酸(DHF,diluted hydrofluoric acid)、緩衝氫氟酸(BHF,buffered hydrofluoric acid)、SC1(包含NH4OH及H2O2之液體)、FPM(包含HF及H2O2之液體)等。即,可代替FOM供給步驟(S6、T6)而執行向基板W之處理對象面供給包含該等藥液中之1個之藥液之藥液供給步驟,作為該藥液供給步驟中使用之藥液,可使用DHF、BHF、SC1、FPM等。於使用該等液體作為藥液之情形時,基板W之處理對象面並非必須為裸矽,基板W之處理對象面亦可包含氧化膜(例如氧化矽膜)及/或氮化膜(例如氮化矽膜)。 As the chemical solution supplied to the substrate W, it is more preferable to use diluted hydrofluoric acid (DHF), buffered hydrofluoric acid (BHF), and SC1 (including NH 4 OH and H 2 O 2 ) . Liquid), FPM (liquid containing HF and H 2 O 2 ), and the like. In other words, instead of the FOM supply step (S6, T6), a chemical liquid supply step of supplying a chemical liquid containing one of the chemical liquids to the processing target surface of the substrate W can be performed as the medicine used in the chemical liquid supply step. For the liquid, DHF, BHF, SC1, FPM, etc. can be used. When such a liquid is used as the chemical liquid, the surface to be processed of the substrate W is not necessarily naked, and the surface to be processed of the substrate W may also include an oxide film (for example, a hafnium oxide film) and/or a nitride film (for example, nitrogen).矽 film).

又,於上述說明中,設為於藥液步驟(S7~S9)之整個期間內將開放永久磁鐵127配置於上位置而進行了說明,但亦可僅於藥液步驟(S7~S9)中之一部分期間內將開放永久磁鐵127配置於上位置。 Further, in the above description, the open permanent magnet 127 is disposed at the upper position in the entire period of the chemical liquid step (S7 to S9), but it may be used only in the chemical liquid step (S7 to S9). The permanent magnet 127 is placed in the upper position during a part of the period.

又,於上述說明中,設為於淋洗步驟(S7~S9)之整個期間內將開放永久磁鐵127配置於上位置而進行了說明,但亦可僅於淋洗步驟(S7~S9)中之一部分期間內將開放永久磁鐵127配置於上位置。 Further, in the above description, the open permanent magnet 127 is disposed at the upper position in the entire period of the rinsing step (S7 to S9), but may be used only in the rinsing step (S7 to S9). The permanent magnet 127 is placed in the upper position during a part of the period.

又,亦可自上述處理液處理廢除刷清洗步驟(S8)。於該情形時,無進行最終淋洗步驟(S9)之必要性,因此,亦可將淋洗步驟(S9)一併廢除。 Further, the brush cleaning step (S8) may be abolished from the treatment liquid. In this case, the necessity of the final rinsing step (S9) is not performed, and therefore, the rinsing step (S9) can also be abolished.

又,設為處理對象面為基板W之上表面而進行了說明,但亦可將基板W之下表面設為處理對象面。於該情形時,向基板W之下表面供給處理液,但藉由容許於基板W之周緣部之基板支撐位置自基板W之下表面向基板W之上表面流回,而可使用處理液不產生處理殘留物地良好地對基板W之周緣部進行處理。 Further, although the surface to be processed is described as the upper surface of the substrate W, the lower surface of the substrate W may be a processing target surface. In this case, the processing liquid is supplied to the lower surface of the substrate W, but the processing liquid is not used by allowing the substrate supporting position of the peripheral portion of the substrate W to flow back from the lower surface of the substrate W to the upper surface of the substrate W. The peripheral portion of the substrate W is treated satisfactorily with the treatment residue.

又,對基板處理裝置1為對圓板狀之半導體基板進行處理之裝置之情形進行了說明,但基板處理裝置1亦可為對液晶顯示裝置用玻璃基板等多邊形之基板進行處理之裝置。 In addition, the case where the substrate processing apparatus 1 is a device for processing a disk-shaped semiconductor substrate has been described. However, the substrate processing apparatus 1 may be a device that processes a polygonal substrate such as a glass substrate for a liquid crystal display device.

對本發明之實施形態詳細進行了說明,但該等只不過是用於使本發明之技術內容明確之具體例,本發明不應限定於該等具體例而進行解釋,本發明之範圍僅由隨附之申請專利範圍限定。 The embodiments of the present invention have been described in detail, but these are merely specific examples for making the technical content of the present invention clear, and the present invention is not limited to the specific examples, and the scope of the present invention is only The scope of the patent application is limited.

本申請案係與於2015年9月29日向日本專利廳提交之日本專利特願2015-192154號、及於2016年2月19日向日本專利廳提交之日本專利特願2016-30155號分別對應,該等申請案之所有揭示藉由引用而併入於本文中。 This application corresponds to Japanese Patent Application No. 2015-192154 filed on September 29, 2015 to the Japanese Patent Office, and Japanese Patent Application No. 2016-30155 filed on February 19, 2016, to the Japanese Patent Office. All disclosures of these applications are incorporated herein by reference.

107‧‧‧旋轉台 107‧‧‧Rotary table

110a‧‧‧可動銷 110a‧‧‧able sales

110b‧‧‧可動銷 110b‧‧‧able sales

110c‧‧‧可動銷 110c‧‧‧able sales

110d‧‧‧可動銷 110d‧‧‧Distributable

110e‧‧‧可動銷 110e‧‧‧able sales

110f‧‧‧可動銷 110f‧‧‧able sales

111‧‧‧第1可動銷群 111‧‧‧1st movable group

112‧‧‧第2可動銷群 112‧‧‧2nd movable group

127‧‧‧開放永久磁鐵 127‧‧‧Open permanent magnet

129‧‧‧磁場產生區域 129‧‧‧Magnetic field generating area

Dr‧‧‧旋轉方向 Dr‧‧‧Rotation direction

W‧‧‧基板 W‧‧‧Substrate

Claims (14)

一種基板保持旋轉裝置,其包含:旋轉台;旋轉驅動單元,其使上述旋轉台繞沿著鉛垂方向之旋轉軸線旋轉;可動銷,其係用以將基板水平地支撐之複數根可動銷,具有可移動地設置於遠離上述旋轉軸線之較遠之開放位置與靠近上述旋轉軸線之保持位置之間的支撐部,且以與上述旋轉台一同繞上述旋轉軸線旋轉之方式設置;施壓單元,其將各可動銷之上述支撐部施壓至上述保持位置;驅動用磁鐵,其對應於各可動銷而安裝;及開放磁鐵,其係以非旋轉狀態設置之開放磁鐵,形成伴隨上述旋轉台之旋轉而旋轉之各可動銷能夠通過之既定之磁場產生區域且為集中於上述旋轉台之旋轉方向且以僅供與複數根可動銷中之一部分可動銷對應之驅動用磁鐵能夠通過之方式設置的磁場產生區域,對通過該磁場產生區域之上述可動銷之驅動用磁鐵賦予斥力或吸引力,於由上述施壓單元施壓至上述保持位置之該可動銷之上述支撐部產生抵抗該施壓力而朝向上述開放位置之力。 A substrate holding rotation device comprising: a rotary table; a rotary drive unit that rotates the rotary table about a rotation axis along a vertical direction; and a movable pin that is used to support a plurality of movable pins horizontally of the substrate, a support portion movably disposed between a distant open position away from the rotation axis and a holding position adjacent to the rotation axis, and disposed to rotate around the rotation axis together with the rotating table; a pressure applying unit, The pressing portion of each movable pin is pressed to the holding position; the driving magnet is mounted corresponding to each movable pin; and the open magnet is an open magnet provided in a non-rotating state to form a rotating table. Each of the movable and rotatable movable pins can pass through the predetermined magnetic field generating region and is disposed in such a manner as to be concentrated in the rotating direction of the rotating table and can be passed through only the driving magnet corresponding to one of the plurality of movable pins. a magnetic field generating region that imparts a repulsive force or attraction to the driving magnet of the movable pin that passes through the magnetic field generating region Pressed by the pressing means in the holding position to the supporting portion of the movable pin can be generated against the urging force of the above-mentioned force toward the open position. 如請求項1之基板保持旋轉裝置,其進而包含第1相對移動單元,該第1相對移動單元係以上述開放磁鐵與上述驅動用磁鐵之間之距離變化之方式,使上述開放磁鐵與上述旋轉台相對移動。 The substrate holding rotating device according to claim 1, further comprising: a first relative moving unit that changes the distance between the open magnet and the driving magnet to rotate the opening magnet and the rotating The station moves relatively. 如請求項2之基板保持旋轉裝置,其中,上述第1相對移動單元係使上述開放磁鐵與上述旋轉台於在各驅動用磁鐵通過之區域形成上述磁場產生區域之第1位置、與在各驅動用磁鐵通過之區域 不形成上述磁場產生區域之第2位置之間相對移動。 The substrate holding rotating device according to claim 2, wherein the first relative moving unit causes the open magnet and the rotating table to form a first position of the magnetic field generating region in a region where each driving magnet passes, and each driving unit Area through which a magnet passes The relative movement between the second positions of the magnetic field generating regions is not formed. 如請求項3之基板保持旋轉裝置,其中,於上述開放磁鐵與上述旋轉台位於上述第1位置之狀態下,上述可動銷之上述支撐部配置於上述開放位置與上述保持位置之間之中間位置。 The substrate holding rotating device according to claim 3, wherein the support portion of the movable pin is disposed at an intermediate position between the open position and the holding position in a state where the open magnet and the rotating table are located at the first position . 如請求項1或2之基板保持旋轉裝置,其中,上述施壓單元包含封閉磁鐵,該封閉磁鐵於與各驅動用磁鐵之間賦予斥力或吸引力,而將各可動銷之上述支撐部施壓至上述保持位置。 The substrate holding rotating device according to claim 1 or 2, wherein the pressing unit includes a closing magnet that applies a repulsive force or an attractive force to each of the driving magnets, and presses the support portion of each of the movable pins To the above holding position. 如請求項5之基板保持旋轉裝置,其進而包含第2相對移動單元,該第2相對移動單元係使上述封閉磁鐵與上述旋轉台在上述封閉磁鐵於與上述驅動用磁鐵之間賦予上述斥力或上述吸引力之第3位置、和上述封閉磁鐵於與上述驅動用磁鐵之間不賦予上述斥力及上述吸引力之第4位置之間相對移動。 The substrate holding rotating device of claim 5, further comprising: a second relative moving unit that applies the repulsive force between the closing magnet and the rotating table between the closing magnet and the driving magnet The third position of the attraction force and the closing magnet move relative to each other between the driving magnet and the fourth position where the repulsive force and the suction force are not provided. 如請求項1之基板保持旋轉裝置,其中,上述開放磁鐵包含在上述旋轉台之圓周方向隔以間隔而設置之複數個開放磁鐵,形成於各驅動用磁鐵通過之區域之上述磁場產生區域係於上述旋轉台之旋轉方向上間斷之區域。 The substrate holding rotating device according to claim 1, wherein the open magnet includes a plurality of open magnets disposed at intervals in a circumferential direction of the turntable, and the magnetic field generating region formed in a region through which each of the driving magnets passes is The region of the above-mentioned rotating table that is interrupted in the direction of rotation. 如請求項7之基板保持旋轉裝置,其中,上述可動銷包含:第1可動銷群,其包含至少3根可動銷;及第2可動銷群,其與第1可動銷群分開地設置,且包含至少3根可動銷;與所有之上述可動銷對應地安裝之上述驅動用磁鐵,係以具有於與沿著上述旋轉軸線之軸線正交之方向上彼此相同之磁極方向的方式設置,上述複數個上述開放磁鐵係以如下方式配置,即,於與上述第1 可動銷群對應之各驅動用磁鐵存在於上述磁場產生區域內之狀態下,與上述第2可動銷群對應之各驅動用磁鐵不存在於上述磁場產生區域內,且於與上述第2可動銷群對應之各驅動用磁鐵存在於磁場產生區域內之狀態下,與上述第1可動銷群對應之各驅動用磁鐵不存在於上述磁場產生區域內。 The substrate holding rotating device of claim 7, wherein the movable pin includes: a first movable pin group including at least three movable pins; and a second movable pin group separately provided from the first movable pin group, and And including at least three movable pins; and the driving magnets that are mounted corresponding to all of the movable pins are provided so as to have the same magnetic pole directions in a direction orthogonal to an axis along the rotation axis, and the plural The above-mentioned open magnets are arranged in the following manner, that is, in the first In a state in which each of the driving magnets corresponding to the movable pin group exists in the magnetic field generating region, each of the driving magnets corresponding to the second movable pin group does not exist in the magnetic field generating region, and the second movable pin In a state where each of the driving magnets corresponding to the group exists in the magnetic field generating region, each of the driving magnets corresponding to the first movable pin group does not exist in the magnetic field generating region. 如請求項8之基板保持旋轉裝置,其中,上述第1可動銷群包含與上述第2可動銷群為相同數量之上述可動銷,上述第1及第2可動銷群係於上述旋轉台之圓周方向上交替地、且以各可動銷群中包含之複數根可動銷成為等間隔之方式配置,上述複數個開放磁鐵係以與各可動銷群中包含之上述可動銷之數量相同之數量,於上述旋轉台之圓周方向等間隔地配置。 The substrate holding rotating device according to claim 8, wherein the first movable pin group includes the same number of the movable pins as the second movable pin group, and the first and second movable pin groups are attached to a circumference of the rotary table. Alternatingly, the plurality of movable pins included in each of the movable pin groups are arranged at equal intervals, and the plurality of open magnets are equal to the number of the movable pins included in each of the movable pin groups. The rotation stages are arranged at equal intervals in the circumferential direction. 如請求項7至9中任一項之基板保持旋轉裝置,其中,上述旋轉台之旋轉速度及/或上述開放磁鐵之圓周方向長度,係以藉由1個上述開放磁鐵形成之上述磁場產生區域於上述旋轉台之圓周方向上與上述可動銷之圓周方向之配置間隔一致的方式設定。 The substrate holding and rotating device according to any one of claims 7 to 9, wherein a rotation speed of the rotary table and/or a circumferential length of the open magnet is the magnetic field generation region formed by one of the open magnets It is set so that the arrangement|interval of the circumferential direction of the said movable pin may correspond in the circumferential direction of the said turntable. 如請求項1或2之基板保持旋轉裝置,其進而包含屏蔽構件,該屏蔽構件係將藉由上述開放磁鐵產生之磁場與藉由上述封閉磁鐵產生之磁場之干涉予以屏蔽。 The substrate holding rotating device of claim 1 or 2, further comprising a shielding member that shields the magnetic field generated by the open magnet from the magnetic field generated by the closed magnet. 一種基板處理裝置,其包含:請求項1或2之基板保持旋轉裝置;及處理液供給單元,其對由上述基板保持旋轉裝置保持之基板之主面供給處理液。 A substrate processing apparatus comprising: the substrate holding rotating device of claim 1 or 2; and a processing liquid supply unit that supplies a processing liquid to a main surface of the substrate held by the substrate holding rotating device. 如請求項12之基板處理裝置,其進而包含: 第1相對移動單元,其使上述開放磁鐵與上述旋轉台於在各驅動用磁鐵通過之區域形成上述磁場產生區域之第1位置、與在各驅動用磁鐵通過之區域不形成上述磁場產生區域之第2位置之間相對移動;及控制單元,其對上述旋轉驅動單元、上述處理液供給單元及上述第1相對移動單元進行控制;上述控制單元執行:旋轉台旋轉步驟,其使上述旋轉台繞上述旋轉軸線旋轉;處理液供給步驟,其對伴隨上述旋轉台之旋轉而旋轉之基板供給處理液;及開放磁鐵配置步驟,其與上述旋轉台旋轉步驟及上述處理液供給步驟並行地,將上述開放磁鐵與上述旋轉台之相對位置配置於上述第1位置。 The substrate processing apparatus of claim 12, further comprising: The first relative moving unit is configured such that the open magnet and the rotating table form the first position of the magnetic field generating region in a region where each driving magnet passes, and the magnetic field generating region does not form in a region where each driving magnet passes. a relative movement between the second positions; and a control unit that controls the rotation drive unit, the processing liquid supply unit, and the first relative movement unit; and the control unit performs a rotation table rotation step of winding the rotation table The rotation axis is rotated; the processing liquid supply step is to supply a processing liquid to the substrate that rotates in accordance with the rotation of the rotating table; and the open magnet disposing step is performed in parallel with the rotating table rotating step and the processing liquid supplying step The relative position of the open magnet and the rotating table is disposed at the first position. 一種基板處理方法,其係於包含基板保持旋轉裝置及第1相對移動單元之基板處理裝置中執行之基板處理方法,上述基板保持旋轉裝置包含:旋轉台;旋轉驅動單元,其使上述旋轉台繞沿著鉛垂方向之旋轉軸線旋轉;可動銷,其係用以將基板水平地支撐之複數根可動銷,具有可移動地設置於遠離上述旋轉軸線之較遠之開放位置與靠近上述旋轉軸線之保持位置之間的支撐部,且以與上述旋轉台一同繞上述旋轉軸線旋轉之方式設置;施壓單元,其將各可動銷之上述支撐部施壓至上述保持位置;驅動用磁鐵,其對應於各可動銷而安裝;及開放磁鐵,其係以非旋轉狀態設置之開放磁鐵,形成伴隨上述旋轉台之旋轉而旋轉之各可動銷能夠通過之既定之磁場產生區域且為集中於上述旋轉台之旋轉方向且以僅供與複數根 可動銷中之一部分可動銷對應之驅動用磁鐵能夠通過之方式設置的磁場產生區域,對通過該磁場產生區域之上述可動銷之驅動用磁鐵賦予斥力或吸引力,於由上述施壓單元施壓至上述保持位置之該可動銷之上述支撐部產生抵抗該施壓力而朝向上述開放位置之力;上述第1相對移動單元係使上述開放磁鐵及上述旋轉台於在各驅動用磁鐵通過之區域形成上述磁場產生區域之第1位置、與在各驅動用磁鐵通過之區域不形成上述磁場產生區域之第2位置之間相對移動;該基板處理方法包含:旋轉台旋轉步驟,其使上述旋轉台繞上述旋轉軸線旋轉;處理液供給步驟,其對伴隨上述旋轉台之旋轉而旋轉之基板供給處理液;及開放磁鐵配置步驟,其與上述旋轉台旋轉步驟及上述處理液供給步驟並行地,將上述開放磁鐵與上述旋轉台之相對位置配置於上述第1位置。 A substrate processing method for performing a substrate processing method performed in a substrate processing apparatus including a substrate holding rotating device and a first relative moving unit, wherein the substrate holding rotating device includes: a rotating table; and a rotary driving unit that winds the rotating table Rotating along a rotation axis in a vertical direction; a movable pin, which is a plurality of movable pins for horizontally supporting the substrate, having a movably disposed open position far from the rotation axis and close to the rotation axis a support portion between the positions is held, and is disposed to rotate around the rotation axis together with the rotating table; a pressing unit that presses the support portion of each movable pin to the holding position; and a driving magnet corresponding thereto And an open magnet that is an open magnet that is provided in a non-rotating state, and that forms a predetermined magnetic field generating region through which each of the movable pins that rotates with the rotation of the rotating table can pass, and is concentrated on the rotating table. Direction of rotation and only for multiple roots One of the movable pins, the magnetic field generating region through which the driving magnet can be provided, applies a repulsive force or an attractive force to the driving magnet of the movable pin passing through the magnetic field generating region, and is pressed by the pressing unit. The support portion of the movable pin to the holding position generates a force that is directed toward the open position against the pressing force, and the first relative moving unit causes the open magnet and the rotating table to form the above-described region in which each of the driving magnets passes a first position of the magnetic field generating region and a second position that does not form the magnetic field generating region in a region where each of the driving magnets passes; the substrate processing method includes a rotating table rotating step of rotating the rotating table Rotational axis rotation; a processing liquid supply step of supplying a processing liquid to a substrate that rotates in accordance with rotation of the rotating table; and an open magnet disposing step that opens in parallel with the rotating table rotating step and the processing liquid supply step The relative position of the magnet and the rotating table is disposed at the first position.
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US9385020B2 (en) * 2011-12-19 2016-07-05 SCREEN Holdings Co., Ltd. Substrate holding and rotating device, substrate treatment apparatus including the device, and substrate treatment method
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