CN111069115A - post-CMP cleaning method - Google Patents
post-CMP cleaning method Download PDFInfo
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- CN111069115A CN111069115A CN201811229584.4A CN201811229584A CN111069115A CN 111069115 A CN111069115 A CN 111069115A CN 201811229584 A CN201811229584 A CN 201811229584A CN 111069115 A CN111069115 A CN 111069115A
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- soaking
- cleaning brush
- cleaning
- pva
- brush
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- 238000004140 cleaning Methods 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000002791 soaking Methods 0.000 claims abstract description 63
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 48
- 239000000243 solution Substances 0.000 claims abstract description 38
- 239000011259 mixed solution Substances 0.000 claims abstract description 3
- 239000002245 particle Substances 0.000 abstract description 6
- 239000003344 environmental pollutant Substances 0.000 abstract description 2
- 231100000719 pollutant Toxicity 0.000 abstract description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 29
- 229920002451 polyvinyl alcohol Polymers 0.000 description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 229910001868 water Inorganic materials 0.000 description 13
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- 238000007654 immersion Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000013618 particulate matter Substances 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002993 sponge (artificial) Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000733 zeta-potential measurement Methods 0.000 description 1
Images
Classifications
-
- B08B1/50—
-
- B08B1/20—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
Abstract
One embodiment of the invention provides a post-CMP cleaning method, which comprises the steps of soaking a PVA cleaning brush in a soaking solution; cleaning the wafer by using the soaked PVA cleaning brush; wherein the soaking solution is tetramethylammonium hydroxide and NH3·H2And (3) mixed solution of O. According to the method provided by the embodiment of the invention, the PVA cleaning brush is treated by the soaking solution, so that the zeta potential of the surface of the PVA cleaning brush is negative, the surface of the pollutant particles is also negatively charged, and the situation that the electric property is opposite can be avoided that the particles are adhered to the surface of the cleaning brush to cause secondary pollution to the wafer.
Description
Technical Field
The invention relates to cleaning after Chemical Mechanical Polishing (CMP), in particular to a cleaning method after CMP.
Background
In wafer fabrication, advanced processes require more CMP steps as the pattern size shrinks and the number of stacked layers increases. However, since the CMP uses consumables such as polishing slurry, nano-particles and residues are often adhered to the surface of the wafer after polishing is finished, and these contaminants need to be removed before the wafer enters the next manufacturing process, so as to avoid adverse effects on the subsequent processes.
At present, the method widely accepted in the industry is to clean the wafer surface by using a PVA brush in post-CMP cleaning, and adjust the distance and the rotation speed of the brush to make the brush directly contact with the wafer surface, so as to take away particles on the surface by physical force, thereby achieving the cleaning effect.
However, the removal of particles and residues from the wafer surface by physical contact may cause contaminants to adhere to the brushes and cause secondary contamination of the wafer.
Disclosure of Invention
One of the main objects of the present invention is to provide a post-CMP cleaning method, which comprises soaking a PVA cleaning brush in a soaking solution; cleaning the wafer by using the soaked PVA cleaning brush; wherein the soaking solution is tetramethylammonium hydroxide and NH3·H2And (3) mixed solution of O.
According to an embodiment of the invention, the soaking solution contains 0.030-0.033% by mass of tetramethylammonium hydroxide.
According to an embodiment of the present invention, the content of tetramethylammonium hydroxide in the soaking solution is 0.0315% by mass.
According to one embodiment of the present invention, NH is contained in the soaking solution3·H2The mass percentage of O is 0.95-1.05%.
According to one embodiment of the present invention, NH is contained in the soaking solution3·H2The mass percentage of O is 1 percent.
According to an embodiment of the present invention, the immersion treatment time is 30 minutes to 1.5 hours.
According to an embodiment of the present invention, the soaking treatment time is 1 hour.
According to the method provided by the embodiment of the invention, the PVA cleaning brush is treated by the soaking solution, so that the zeta potential of the surface of the PVA cleaning brush is negative, the surface of the pollutant particles is also negatively charged, and the situation that the electric property is opposite can be avoided that the particles are adhered to the surface of the cleaning brush to cause secondary pollution to the wafer.
Drawings
Various objects, features and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments of the invention, when considered in conjunction with the accompanying drawings. The drawings are merely exemplary of the invention and are not necessarily drawn to scale. In the drawings, like reference characters designate the same or similar parts throughout the different views. Wherein:
FIG. 1A is a schematic view showing the construction of an untreated PVA cleaning brush for cleaning a wafer;
FIG. 1B is a schematic view showing the configuration of a PVA cleaning brush subjected to soaking treatment for cleaning a wafer according to one embodiment of the present invention;
FIG. 2A is a schematic view of a wafer surface cleaned by the cleaning brush of FIG. 1A;
FIG. 2B is a schematic view of the wafer surface cleaned by the cleaning brush of FIG. 1B;
FIG. 3 is a schematic view showing the construction of a PVA cleaning brush subjected to a soaking treatment according to an embodiment of the present invention;
FIG. 4A is a schematic view of the wash brush of FIG. 1A after washing;
FIG. 4B is a schematic view of the cleaning brush of FIG. 1B after cleaning;
FIG. 5 is a contact angle test chart of example 1 of the present invention and comparative examples 1 to 3;
FIG. 6A is a graph showing the stability of the water yield of the washing brush without the immersion treatment in the application example;
fig. 6B is a graph showing the stability of the water yield of the washing brush subjected to the soaking treatment of example 1 in the application example.
Detailed Description
Exemplary embodiments that embody features and advantages of the invention are described in detail below in the specification. It is to be understood that the invention is capable of other embodiments and that various changes in form and details may be made therein without departing from the scope of the invention and the description and drawings are to be regarded as illustrative in nature and not as restrictive.
An embodiment of the present invention provides a post-CMP cleaning method, in which a PVA (polyvinyl alcohol) cleaning brush is subjected to a pre-soaking treatment and then used to clean a wafer, so that contaminants can be effectively removed and prevented from adhering to the cleaning brush.
The post-CMP cleaning method according to an embodiment of the present invention includes:
soaking the PVA cleaning brush in a soaking solution; and
cleaning the wafer by using the soaked PVA cleaning brush;
wherein the soaking solution is tetramethylammonium hydroxide (TMAH) and NH3·H2Mixed aqueous solution of O.
The soaking solution in one embodiment of the invention is alkaline, under alkaline conditions, zeta-potential (ZetaPotential) on the surface of PVA is negative, the surface of particulate matter is also negatively charged, and the electrical property is opposite, so that secondary pollution caused by the particulate matter adhered to the surface of the cleaning brush can be avoided.
As shown in fig. 1A and 1B, the cleaning brush 30 after the soaking treatment according to the embodiment of the present invention is more flexible and has a larger surface contact area with the wafer 10 than the cleaning brush 20 without the treatment, and the wafer 10 is less stressed per unit area under the same stress condition, and is less likely to cause scratches.
As shown in fig. 2A and 2B, the wafer cleaned by the brush 30 after the soaking treatment according to the embodiment of the present invention has less surface contaminants and is cleaner than the wafer cleaned by the brush 20 without the soaking treatment.
In one embodiment, the mass percentage of TMAH in the soaking solution is 0.0315 ± 0.0015%, such as 0.03%, 0.0315%, 0.033%, etc.
In one embodiment, NH3·H2The content of O in the soaking solution is 1 + -0.05% by mass, such as 0.95%, 1%, 1.05% and the like.
In one embodiment, the soaking solution is prepared by mixing an aqueous solution of TMAH and an aqueous solution of ammonia in a mass ratio of 1: 1.
In one embodiment, the soaking solution is prepared by mixing TMAH aqueous solution with mass concentration of 0.063 + -0.003% and ammonia water with mass concentration of 2 + -0.1 wt%.
In one embodiment, the washing brush may be immersed in the immersion liquid for 30 minutes to 2 hours, for example, 40 minutes, 60 minutes, 80 minutes, 100 minutes, and the like.
The PVA cleaning brush is a high molecular polymer sponge, is a hard material with larger elastic modulus in a dry state, and is soft and fine after absorbing water; the manufacturing process of the wafer cleaning device is carried out through foaming, injection molding, demolding, cutting and other stages, and by-products are generated, and are easy to fall off in the post-CMP cleaning process, and the wafer surface can be scratched, so that the cleaning effect is affected.
In one embodiment, the TMAH has the property of a surfactant, and the PVA cleaning brush can improve the hydrophilicity and elastic modulus of the surface by soaking with the TMAH soaking solution, thereby facilitating the discharge of by-products generated in the manufacturing process, improving the uniformity of each part of the PVA cleaning brush, and shortening the intermittent operation time.
The TMAH in the soaking solution has the property of a surfactant, and can be regarded as having a hydrophilic group and a hydrophobic group, the structure of the cleaning brush after soaking is shown in fig. 3, the hydrophilic group is arranged on the surface, so that the cleaning brush has better hydrophilicity, and is beneficial to discharging by-products in the cleaning process; in addition, the time for activating (Break-in) the brush after being arranged on the machine can be shortened by soaking the cleaning brush, so that the cleaning brush has better uniformity. As shown in fig. 4A and 4B, in the cleaning process of the cleaning brush, deionized water is introduced into the brush, and the flow rate of the untreated cleaning brush (shown in fig. 4A) is very small or almost 0 in some areas; the treated washing brush (shown in fig. 4B) is less likely to have the above-mentioned water flow rate small or almost 0 because the soaking treatment can promote the discharge of by-products during the production thereof. Because the machine is required to be operated after the machine is operated for activation, the machine cannot be produced at the moment, and the effective production time of the machine can be prolonged by the soaking pretreatment of the cleaning brush.
In one embodiment, the soaked cleaning brush becomes soft, so that a relatively large real contact area can be achieved under relatively small stress, effective cleaning can be achieved under relatively large brush gaps, the cleaning effect is ensured, and the risk of scratching is reduced.
The soaking solution provided by the embodiment of the invention can be used for soaking a plurality of cleaning brushes at the same time, so that the cleaning efficiency is further improved.
Hereinafter, a post-CMP cleaning method according to an embodiment of the present invention will be described with reference to specific examples.
Example 1
Mixing TMAH aqueous solution with mass concentration of 0.063% and ammonia water with mass concentration of 2% according to proportion of 1:1 to prepare soak solution;
the PVA cleaning brush was taken out after being immersed in the immersion liquid for 1 hour, the PVA cleaning brush after the immersion treatment was marked as S1, and the Contact Angle (Contact Angle) and zeta-potential were measured, and the specific results of the Contact Angle measurement are shown in fig. 5, and the zeta-potential measurement result is negative.
Example 2
Mixing TMAH aqueous solution with mass concentration of 0.06% and ammonia water with mass concentration of 2% according to the proportion of 1:1 to prepare soaking solution;
the PVA cleaning brush was taken out after being immersed in the immersion liquid for 0.5 hour, and the contact angle (ContactAngle) was measured, and the result showed that the contact angle was about 23 °, and the zeta-potential was negative.
Example 3
This example is substantially the same as example 1 in terms of steps, conditions, and the like, except that: TMAH aqueous solution with the mass concentration of 0.055% and ammonia water with the mass concentration of 2% are mixed according to the proportion of 1:1 to prepare soaking solution, the contact angle measured after the PVA cleaning brush is soaked is about 25 degrees, and the zeta-potential test result is negative.
Example 4
This example is substantially the same as example 1 in terms of steps, conditions, and the like, except that: TMAH aqueous solution with the mass concentration of 0.07% and ammonia water with the mass concentration of 2% are mixed according to the proportion of 1:1 to prepare soaking solution, the contact angle measured after the PVA cleaning brush is soaked is about 22 degrees, and the zeta-potential test result is negative.
Example 5
This example is substantially the same as example 1 in terms of steps, conditions, and the like, except that: TMAH aqueous solution with the mass concentration of 0.06% and ammonia water with the mass concentration of 1.8% are mixed according to the proportion of 1:1 to prepare soaking solution, and the contact angle of the PVA cleaning brush after soaking treatment is about 25 degrees zeta potential, and the test result is negative.
Example 6
This example is substantially the same as example 1 in terms of steps, conditions, and the like, except that: TMAH aqueous solution with the mass concentration of 0.06% and ammonia water with the mass concentration of 2.2% are mixed according to the proportion of 1:1 to prepare soaking solution, and the contact angle of the PVA cleaning brush after soaking treatment is about 24 degrees zeta potential, and the test result is negative.
Comparative example 1
This example is substantially the same as example 1 in terms of steps, conditions, and the like, except that: the soaking solution used was ammonia water with a mass concentration of 1%, and the PVA cleaning brush after the soaking treatment was marked as D1, and the results of the relevant tests are shown in fig. 5.
Comparative example 2
This example is substantially the same as example 1 in terms of steps, conditions, and the like, except that: the used soaking solution is composed of ammonia water with mass concentration of 1% and EDTA with mass concentration of 0.01%, the PVA cleaning brush after soaking treatment is marked as D2, and relevant test results are shown in figure 5.
Comparative example 3
This example is substantially the same as example 1 in terms of steps, conditions, and the like, except that: the used soaking solution is composed of ammonia water with mass concentration of 1%, TMAH with mass concentration of 0.0315% and EDTA with mass concentration of 0.01%, the PVA cleaning brush after soaking treatment is marked as D3, and relevant test results are shown in FIG. 5.
Application example
The washing brush subjected to the soaking treatment of example 1 and the same washing brush not subjected to the soaking treatment were treated as follows:
dividing the cleaning brush into 10 areas, introducing deionized water at a flow rate of 450ml/min, counting water flow in different areas after 1min, repeating for 5 times, taking the maximum value and the minimum value, and taking relevant statistical values as shown in FIGS. 6A and 6B.
It can be seen that the water yield of the pretreated brush of example 1 is more uniform in each zone, and the maximum and minimum water yields of each zone are not much different. During the cleaning process, the cleaning effect may be better when the water flow is large, but the larger the water flow is, the better the water flow is, and more importantly, the stable and uniform water outlet amount can be provided for each area of the cleaning brush, so that the whole wafer can have a good cleaning effect.
FIG. 5 shows data indicating that PVA cleaning brushes were TMAH + NH treated in example 1 of the present invention3·H2After O soak treatment, NH from comparative examples 1 to 33·H2O soak solution and NH3·H2O + EDTA soak solution, TMAH + NH3·H2Compared with the treatment of the O + EDTA soaking solution, the PVA cleaning brush has a smaller contact angle, which shows that the PVA cleaning brush after soaking treatment in the embodiment 1 is softer and has a larger contact area, so that effective cleaning can be realized under a larger brush gap, and the risk of scratching is reduced while the cleaning effect is ensured.
Unless otherwise defined, all terms used herein have the meanings commonly understood by those skilled in the art.
The described embodiments of the present invention are for illustrative purposes only and are not intended to limit the scope of the present invention, and those skilled in the art may make various other substitutions, alterations, and modifications within the scope of the present invention, and thus, the present invention is not limited to the above-described embodiments but only by the claims.
Claims (7)
1. A post-CMP cleaning method, comprising:
soaking the PVA cleaning brush in a soaking solution; and
cleaning the wafer by using the soaked PVA cleaning brush;
wherein the soaking solution is tetramethylammonium hydroxide and NH3·H2And (3) mixed solution of O.
2. The method according to claim 1, wherein the soaking solution contains 0.030-0.033% by mass of tetramethylammonium hydroxide.
3. The method according to claim 2, wherein the soaking solution contains 0.0315% of tetramethylammonium hydroxide by mass.
4. The method of claim 1, wherein in the soaking solution, NH is present3·H2The mass percentage of O is 0.95-1.05%.
5. The method of claim 4, wherein in the soaking solution, NH is present3·H2The mass percentage of O is 1 percent.
6. The method according to claim 1, wherein the soaking treatment is performed for 30 minutes to 1.5 hours.
7. The method of claim 6, wherein the soaking treatment is for 1 hour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811229584.4A CN111069115A (en) | 2018-10-22 | 2018-10-22 | post-CMP cleaning method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811229584.4A CN111069115A (en) | 2018-10-22 | 2018-10-22 | post-CMP cleaning method |
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| CN111069115A true CN111069115A (en) | 2020-04-28 |
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| CN201811229584.4A Pending CN111069115A (en) | 2018-10-22 | 2018-10-22 | post-CMP cleaning method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582307A (en) * | 2020-12-15 | 2021-03-30 | 华海清科股份有限公司 | Wafer cleaning method capable of dynamically adjusting posture |
| CN114210639A (en) * | 2021-11-16 | 2022-03-22 | 广东先导微电子科技有限公司 | Cleaning process for reducing number of bright spots on surface of germanium wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112582307A (en) * | 2020-12-15 | 2021-03-30 | 华海清科股份有限公司 | Wafer cleaning method capable of dynamically adjusting posture |
| CN114210639A (en) * | 2021-11-16 | 2022-03-22 | 广东先导微电子科技有限公司 | Cleaning process for reducing number of bright spots on surface of germanium wafer |
| CN114210639B (en) * | 2021-11-16 | 2023-02-21 | 广东先导微电子科技有限公司 | Cleaning process for reducing number of bright spots on surface of germanium wafer |
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