CN105505230A - Chemico-mechanical polishing cleaning fluid for semiconductor silicon wafers - Google Patents
Chemico-mechanical polishing cleaning fluid for semiconductor silicon wafers Download PDFInfo
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- CN105505230A CN105505230A CN201610086891.6A CN201610086891A CN105505230A CN 105505230 A CN105505230 A CN 105505230A CN 201610086891 A CN201610086891 A CN 201610086891A CN 105505230 A CN105505230 A CN 105505230A
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- mechanical polishing
- scavenging solution
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- semiconductor silicon
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- Organic Chemistry (AREA)
- Detergent Compositions (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses chemico-mechanical polishing cleaning fluid for semiconductor silicon wafers. The chemico-mechanical polishing cleaning fluid is prepared from, by weight, 5-20 parts of organic acid, 0.2-1 part of surface active agent, 0.1-1 part of brightener, 1-10 parts of pH regulator, 0.01-0.1 part of oxidizing agent, 0.1-1 part of stabilizer, 0.1-1 part of inhibitor, 20-30 parts of deionized water and 2-8 parts of grinding agent. Organic acid is selected from one or more of citric acid and diammonium hydrogen citrate. The pH value of the cleaning fluid is 9.5-11.5. The surface active agent is a polyether surface active agent. The grinding agent is silicon dioxide. The surface tension of the cleaning fluid can be reduced, surface contaminants can be rapidly stripped, the surfaces of the silicon wafers can be effectively washed, and the surface roughness of the silicon wafers can be reduced. Contamination of metal impurities to silicon wafers is restrained, and precipitation of oxide can be reduced. The cleaning fluid is low in cost, free of pollution to the environment and capable of thoroughly removing contaminants. Expansion of movable metal ions is effectively eradicated, reliability of chips is improved, and yield of production is improved.
Description
Technical field
The present invention relates to semiconductor surface process field, specifically a kind of chemistry mechanical polishing of semiconductor silicon chip scavenging solution.
Background technology
In the process for making of unicircuit, the condition of surface of chip and cleanliness factor are one of most important factors affecting device quality and reliability, therefore, in chip manufacturing proces, must carry out chemically machinery polished to silicon chip.At present, Wafer Chemical Mechanical Polishing is placed on polishing pad by silicon chip, uses polishing fluid to carry out polishing to silicon chip.Because generally all containing silicon-dioxide, aluminum oxide, cerium dioxide, metal ion and organic compound etc. in existing polishing fluid, so silicon chip is after chemically machinery polished, the particle produced in above-claimed cpd, ion and polishing process will be adsorbed on silicon chip surface, cause wafer contamination, therefore need to clean silicon chip after a polish, obtain satisfactory clean silicon wafer.Existing scavenging solution is oxidized silicon chip surface and corrodes, but easily there is the phenomenon that corrosion is uneven, cause silicon chip surface poor flatness, be difficult to remove the metal pollutant (iron, nickel, copper, calcium, chromium, zinc or its oxyhydroxide or oxide compound), the particle of particle diameter below 0.1 μm and the metal ion that produce in polishing and corrosion process, cleaning performance is poor, and scavenging solution cost is high and environmental pollution is serious.
Summary of the invention
The object of the present invention is to provide a kind of chemistry mechanical polishing of semiconductor silicon chip scavenging solution, to solve the problem proposed in above-mentioned background technology.
For achieving the above object, the invention provides following technical scheme:
A kind of chemistry mechanical polishing of semiconductor silicon chip scavenging solution, comprises according to the raw material of weight part: organic acid 5-20 part, tensio-active agent 0.2-1 part, brightening agent 0.1-1 part, pH adjusting agent 1-10 part, oxygenant 0.01-0.1 part, stablizer 0.1-1 part, inhibitor 0.1-1 part, deionized water 20-30 part, abrasive 2-8 part.
As the further scheme of the present invention: comprise according to the raw material of weight part: organic acid 12.5 parts, 0.6 part, tensio-active agent, brightening agent 0.5 part, pH adjusting agent 5 parts, 0.05 part, oxygenant, stablizer 0.5 part, 0.5 part, inhibitor, deionized water 25 parts, abrasive 5 parts.
As the present invention's further scheme: described organic acid is selected from one or more in citric acid and diammonium hydrogen citrate.
As the present invention's further scheme: the pH value of described scavenging solution is 7.5 ~ 12.0.
As the present invention's further scheme: the pH value of described scavenging solution is 9.5 ~ 11.5.
As the present invention's further scheme: described pH adjusting agent is one or more in Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, TPAOH, ammoniacal liquor, potassium hydroxide, thanomin and trolamine.
As the present invention's further scheme: described tensio-active agent is polyethet surfactant.
As the present invention's further scheme: described brightening agent is halogen.
As the present invention's further scheme: described abrasive is silicon-dioxide.
As the present invention's further scheme: described oxygenant is hydrogen peroxide or persulphate.
Compared with prior art, the invention has the beneficial effects as follows: the present invention can reduce the surface tension of clean-out system, can peel off surface contaminant fast, effective cleaning silicon chip surface, reduces silicon face roughness; Suppress metallic impurity to the pollution of silicon chip, the precipitation of oxide compound can be reduced; Cost is low, environmentally safe, can thorough clean contaminants; Effective diffusion of having eradicated moving metal ion, improves the reliability of chip, improves the yield of production.
Embodiment
Below in conjunction with the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
In the embodiment of the present invention, a kind of chemistry mechanical polishing of semiconductor silicon chip scavenging solution, comprises according to the raw material of weight part: organic acid 5 parts, 0.2 part, tensio-active agent, brightening agent 0.1 part, pH adjusting agent 1 part, 0.01 part, oxygenant, stablizer 0.1 part, 0.1 part, inhibitor, deionized water 20 parts, abrasive 2 parts.
Described organic acid is citric acid.
The pH value of described scavenging solution is 9.5.
Described pH adjusting agent is Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide and TPAOH.
Described tensio-active agent is polyethet surfactant.
Described brightening agent is halogen.
Described abrasive is silicon-dioxide.
Described oxygenant is hydrogen peroxide.
Each composition is mixed, adds deionized water, finally use pH adjusting agent, be adjusted to required pH value, continue to be stirred to uniform fluid, leave standstill and can obtain chemically mechanical polishing cleaning liquid in 30 minutes.
Embodiment 2
In the embodiment of the present invention, a kind of chemistry mechanical polishing of semiconductor silicon chip scavenging solution, comprises according to the raw material of weight part: organic acid 12.5 parts, 0.6 part, tensio-active agent, brightening agent 0.5 part, pH adjusting agent 5 parts, 0.05 part, oxygenant, stablizer 0.5 part, 0.5 part, inhibitor, deionized water 25 parts, abrasive 5 parts.
Described organic acid is diammonium hydrogen citrate.
The pH value of described scavenging solution is 10.
Described pH adjusting agent is ammoniacal liquor and potassium hydroxide.
Described tensio-active agent is polyethet surfactant.
Described brightening agent is halogen.
Described abrasive is silicon-dioxide.
Described oxygenant is persulphate.
Each composition is mixed, adds deionized water, finally use pH adjusting agent, be adjusted to required pH value, continue to be stirred to uniform fluid, leave standstill and can obtain chemically mechanical polishing cleaning liquid in 30 minutes.
Embodiment 3
A kind of chemistry mechanical polishing of semiconductor silicon chip scavenging solution, comprises according to the raw material of weight part: organic acid 20 parts, 1 part, tensio-active agent, brightening agent 1 part, pH adjusting agent 10 parts, 0.1 part, oxygenant, stablizer 1 part, 1 part, inhibitor, deionized water 30 parts, abrasive 8 parts.
Described organic acid is hydrogen citrate three ammonium.
The pH value of described scavenging solution is 11.5.
Described pH adjusting agent is thanomin and trolamine.
Described tensio-active agent is polyethet surfactant.
Described brightening agent is halogen.
Described abrasive is silicon-dioxide.
Described oxygenant is hydrogen peroxide.
Each composition is mixed, adds deionized water, finally use pH adjusting agent, be adjusted to required pH value, continue to be stirred to uniform fluid, leave standstill and can obtain chemically mechanical polishing cleaning liquid in 30 minutes.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.
In addition, be to be understood that, although this specification sheets is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of specification sheets is only for clarity sake, those skilled in the art should by specification sheets integrally, and the technical scheme in each embodiment also through appropriately combined, can form other embodiments that it will be appreciated by those skilled in the art that.
Claims (10)
1. a chemistry mechanical polishing of semiconductor silicon chip scavenging solution, it is characterized in that, comprise according to the raw material of weight part: organic acid 5-20 part, tensio-active agent 0.2-1 part, brightening agent 0.1-1 part, pH adjusting agent 1-10 part, oxygenant 0.01-0.1 part, stablizer 0.1-1 part, inhibitor 0.1-1 part, deionized water 20-30 part, abrasive 2-8 part.
2. chemistry mechanical polishing of semiconductor silicon chip scavenging solution according to claim 1, it is characterized in that, comprise according to the raw material of weight part: organic acid 12.5 parts, 0.6 part, tensio-active agent, brightening agent 0.5 part, pH adjusting agent 5 parts, 0.05 part, oxygenant, stablizer 0.5 part, 0.5 part, inhibitor, deionized water 25 parts, abrasive 5 parts.
3. chemistry mechanical polishing of semiconductor silicon chip scavenging solution according to claim 1 and 2, is characterized in that, described organic acid is selected from one or more in citric acid and diammonium hydrogen citrate.
4. chemistry mechanical polishing of semiconductor silicon chip scavenging solution according to claim 1 and 2, is characterized in that, the pH value of described scavenging solution is 7.5 ~ 12.0.
5. chemistry mechanical polishing of semiconductor silicon chip scavenging solution according to claim 4, is characterized in that, the pH value of described scavenging solution is 9.5 ~ 11.5.
6. chemistry mechanical polishing of semiconductor silicon chip scavenging solution according to claim 1 and 2, it is characterized in that, described pH adjusting agent is one or more in Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, TPAOH, ammoniacal liquor, potassium hydroxide, thanomin and trolamine.
7. chemistry mechanical polishing of semiconductor silicon chip scavenging solution according to claim 1 and 2, is characterized in that, described tensio-active agent is polyethet surfactant.
8. chemistry mechanical polishing of semiconductor silicon chip scavenging solution according to claim 1 and 2, is characterized in that, described brightening agent is halogen.
9. chemistry mechanical polishing of semiconductor silicon chip scavenging solution according to claim 1 and 2, is characterized in that, described abrasive is silicon-dioxide.
10. chemistry mechanical polishing of semiconductor silicon chip scavenging solution according to claim 1 and 2, is characterized in that, described oxygenant is hydrogen peroxide or persulphate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610086891.6A CN105505230A (en) | 2016-02-16 | 2016-02-16 | Chemico-mechanical polishing cleaning fluid for semiconductor silicon wafers |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610086891.6A CN105505230A (en) | 2016-02-16 | 2016-02-16 | Chemico-mechanical polishing cleaning fluid for semiconductor silicon wafers |
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| CN105505230A true CN105505230A (en) | 2016-04-20 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107855936A (en) * | 2017-10-31 | 2018-03-30 | 天津中环领先材料技术有限公司 | A kind of cleaning method of zone-melting silicon polished wafer polissoir |
| CN111069115A (en) * | 2018-10-22 | 2020-04-28 | 长鑫存储技术有限公司 | post-CMP cleaning method |
| CN112608799A (en) * | 2020-12-29 | 2021-04-06 | 广东省科学院化工研究所 | Monocrystalline silicon wafer cleaning agent and application thereof |
| CN114678259A (en) * | 2022-05-30 | 2022-06-28 | 杭州乾晶半导体有限公司 | Method for cleaning polished silicon carbide wafer and corresponding cleaning agent |
| CN114989898A (en) * | 2022-04-02 | 2022-09-02 | 三达奥克化学股份有限公司 | Grinding and polishing residue cleaning solution and preparation method and application thereof |
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| CN101289640A (en) * | 2008-06-05 | 2008-10-22 | 大连三达奥克化学股份有限公司 | Cleaning agent for grinding wafer |
| JP2009278018A (en) * | 2008-05-16 | 2009-11-26 | Kanto Chem Co Inc | Liquid composition for cleaning semiconductor substrate |
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2016
- 2016-02-16 CN CN201610086891.6A patent/CN105505230A/en active Pending
Patent Citations (5)
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| CN1680626A (en) * | 2004-04-09 | 2005-10-12 | 上海月旭半导体科技有限公司 | Cleaning liquid of semiconductor chip after chemical mechanical grind |
| CN101130876A (en) * | 2006-08-25 | 2008-02-27 | 安集微电子（上海）有限公司 | Metal anti-corrosion rinsing liquid used for semiconductor manufacture process |
| JP2009278018A (en) * | 2008-05-16 | 2009-11-26 | Kanto Chem Co Inc | Liquid composition for cleaning semiconductor substrate |
| CN101289640A (en) * | 2008-06-05 | 2008-10-22 | 大连三达奥克化学股份有限公司 | Cleaning agent for grinding wafer |
| CN103666784A (en) * | 2013-11-29 | 2014-03-26 | 孙爱玲 | Pre-cleaning agent for silicon wafer |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107855936A (en) * | 2017-10-31 | 2018-03-30 | 天津中环领先材料技术有限公司 | A kind of cleaning method of zone-melting silicon polished wafer polissoir |
| CN111069115A (en) * | 2018-10-22 | 2020-04-28 | 长鑫存储技术有限公司 | post-CMP cleaning method |
| CN112608799A (en) * | 2020-12-29 | 2021-04-06 | 广东省科学院化工研究所 | Monocrystalline silicon wafer cleaning agent and application thereof |
| CN112608799B (en) * | 2020-12-29 | 2022-05-24 | 广东省科学院化工研究所 | Monocrystalline silicon wafer cleaning agent and application thereof |
| CN114989898A (en) * | 2022-04-02 | 2022-09-02 | 三达奥克化学股份有限公司 | Grinding and polishing residue cleaning solution and preparation method and application thereof |
| CN114989898B (en) * | 2022-04-02 | 2023-10-20 | 三达奥克化学股份有限公司 | Grinding and polishing residue cleaning liquid and preparation method and application thereof |
| CN114678259A (en) * | 2022-05-30 | 2022-06-28 | 杭州乾晶半导体有限公司 | Method for cleaning polished silicon carbide wafer and corresponding cleaning agent |
| CN114678259B (en) * | 2022-05-30 | 2023-11-17 | 杭州乾晶半导体有限公司 | Method for cleaning polished silicon carbide wafer and corresponding cleaning agent |
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